Semiconductor crepe paper
By introducing short-cut carbon fibers and metal elements into crepe paper, the problem that crepe paper cannot simultaneously possess conductivity and cushioning properties has been solved, achieving a balance between conductivity and cushioning. This makes it suitable for insulation and electrostatic protection of electrical equipment, while reducing production costs.
Patent Information
- Application Number
- CN202610123673.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-01-29
- Publication Date
- 2026-03-20
AI Technical Summary
Existing crepe paper cannot simultaneously meet the dual requirements of conductivity, cushioning, and adhesion in electrical equipment, especially in scenarios requiring electrostatic protection and electromagnetic shielding.
Short-cut carbon fibers and metal elements are introduced into ordinary plant fiber crepe paper. Through ultrasonic dispersion and low-temperature treatment, its surface resistivity reaches 103Ω・cm-1010Ω・cm, while maintaining the original crease shape and electrical conductivity.
It achieves both the cushioning and adhesion properties of crepe paper and semiconductor-level conductivity, making it suitable for insulation and electrostatic protection of electrical equipment, preventing short circuits and reducing production costs.
Smart Images
Figure CN121700712A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of paper-based functional modified materials technology, and in particular to a semiconductor crepe paper. Background Technology
[0002] Crepe paper, with its unique pleated structure, possesses excellent cushioning, adhesion, and insulation properties, and has long been a commonly used material in fields such as electrical equipment insulation filling and electronic component packaging protection—for example, it is indispensable for filling gaps inside transformers and transporting precision electronic components. However, the base material of ordinary crepe paper is plant fiber, which is completely non-conductive. With the rapid development of the electronics and electrical industries, many practical scenarios require crepe paper to maintain its original pleated shape (to meet the needs of fitting curved surfaces of equipment and providing cushioning protection), while also hoping that it can have a certain degree of conductivity (such as releasing static electricity, shielding electromagnetic interference, or achieving semiconductor-level stable conductivity). Ordinary crepe paper obviously cannot meet both requirements simultaneously. Summary of the Invention
[0003] One object of the present invention is to provide a semiconductor crepe paper.
[0004] To achieve the above objectives, the technical solution adopted by the present invention is as follows: a semiconductor crepe paper, comprising a substrate: the substrate is ordinary plant fiber crepe paper that retains its original crepe morphology;
[0005] The modified functional components include chopped carbon fibers and metal elements, wherein the chopped carbon fibers and metal elements are synergistically dispersed in the fiber gaps and surface of the ordinary plant fiber crepe paper.
[0006] The surface resistivity of the semiconductor crepe paper is 10. 3 Ω・cm-10 10 Ω・cm, and the number of wrinkles is 8-10 per 10mm.
[0007] Preferably, it includes the following steps:
[0008] S1: Substrate pretreatment: Dry ordinary plant fiber crepe paper at 60-70℃ for 15-20 minutes to make the moisture content ≤2%;
[0009] S2: Preparation of modified functional components: Short-cut carbon fibers are ultrasonically dispersed in deionized water to obtain carbon fiber dispersion; metal salts or nano-metal particles are dispersed in a mixed solution of ethanol and deionized water to obtain metal functional liquid; and the two are mixed at a volume ratio of 3:1 to 5:1 to obtain composite functional liquid.
[0010] S3: Composite modification treatment, immerse the pretreated crepe paper substrate in the composite functional liquid, soak at 40-60℃ for 10-30 minutes and then roll coat to remove excess liquid;
[0011] S4: Wrinkle setting and drying. The modified crepe paper is placed in a setting device with tension control and dried with hot air at 60-80℃ for 20-30 minutes to maintain the original wrinkle shape.
[0012] S5: Post-treatment and performance control. The dried semi-finished product is cured at 90-110℃ for 15-20 minutes, and then the surface resistivity is adjusted to 10 by short-time heat treatment at 120-140℃ or by additional spraying of conductive additives. 3 Ω・cm~10 10 Ω・cm;
[0013] S6: Finished product inspection and packaging. After performance testing according to JB / T10441.2-2004 standard, the finished product shall be stored in a moisture-proof vacuum package.
[0014] Preferably, the metal element is selected from silver, copper, nickel, and aluminum, and is introduced in the form of nanoparticle metal salts.
[0015] Preferably, the mass of the chopped carbon fiber accounts for 1%-15% of the total mass of the semiconductor crepe paper, and the mass of the metal element accounts for 0.5%-8% of the total mass of the semiconductor crepe paper.
[0016] Preferably, the ordinary plant fiber crepe paper is wood pulp fiber paper or bamboo pulp fiber paper, with an initial basis weight of 80-100 g / m³. 2 The thickness is 0.2 to 0.3 mm.
[0017] Preferably, the modified functional components are incorporated into the substrate of the ordinary plant fiber crepe paper by impregnation coating or in-situ polymerization.
[0018] Preferably, the semiconductor crepe paper is used in transformer insulation structures, electrostatic protection of electronic components, and electromagnetic shielding applications.
[0019] Preferably, the mass concentration of the carbon fiber dispersion in step S2 is 0.5% to 2%, and 0.1% to 0.3% of polyvinylpyrrolidone is added as a dispersant; the mass concentration of the metal functional liquid in step S2 is 0.3% to 1.0%.
[0020] Preferably, the composite modification treatment in S3 can be replaced by in-situ polymerization, in which the substrate is first immersed in a metal salt precursor solution, then mixed with a carbon fiber dispersion, and the metal salt is reduced in situ to nano-metal particles by ultraviolet initiation or low-temperature heating at 50-70°C.
[0021] Preferably, in step S4, a flexible pressure roller is used to help fix the fold spacing, ensuring that the wrinkle retention rate is ≥95%.
[0022] Compared with the prior art, the beneficial effects of the present invention are as follows:
[0023] (1) The substrate of this invention is common wood pulp and bamboo pulp crepe paper. There is no need to find special materials. It is convenient and cheap to buy, which greatly reduces the production and use costs. There are no complicated steps. It is just simple operation such as drying, mixing, soaking and low temperature curing. The existing equipment in the factory can be adjusted slightly to produce it. There is no need to buy expensive new equipment. It is suitable for large-scale production. On the one hand, it can maintain the conductivity of semiconductors, which can meet the needs of transformer insulation and anti-static of electronic components. On the other hand, the crepe shape is not lost at all. Whether it is pasted on the equipment or processed later, it can fit and has cushioning like ordinary crepe paper. Moreover, the conductive components have penetrated into the fiber gaps and been cured, so they are not easy to fall off. The conductivity effect will not fluctuate when used. It can be used as ordinary crepe paper or as semiconductor. It can be used directly for the insulation structure of electrical equipment or the electrostatic protection of electronic components. There is no need to change the material for conductivity. The conductivity is controlled within the semiconductor range. It will not be too conductive like metal, which will cause short circuits in the equipment, nor will it be completely non-conductive like ordinary paper. It is safer to use it on electronic and electrical equipment and will not affect the normal operation of the equipment. Attached Figure Description
[0024] Figure 1 This is a schematic diagram of the overall process structure of the present invention. Detailed Implementation
[0025] The present invention will now be further described in conjunction with specific embodiments. It should be noted that, without conflict, the various embodiments or technical features described below can be arbitrarily combined to form new embodiments.
[0026] In the description of this invention, it should be noted that directional terms such as "center," "lateral," "longitudinal," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise" indicate the orientation and positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. They should not be construed as limiting the specific protection scope of this invention.
[0027] It should be noted that the terms "first" and "second" in the specification and claims of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence.
[0028] One preferred embodiment of the present invention, such as Figure 1As shown, a semiconductor crepe paper includes a substrate: a common plant fiber crepe paper in which the substrate retains its original crepe shape.
[0029] Modified functional components, including chopped carbon fibers and metal elements, are synergistically dispersed in the fiber gaps and surface of ordinary plant fiber crepe paper.
[0030] The surface resistivity of semiconductor crepe paper is 10. 3 Ω・cm-10 10 Ω・cm, and the number of wrinkles is 8-10 per 10mm.
[0031] Includes the following steps:
[0032] S1: Substrate pretreatment: Dry ordinary plant fiber crepe paper at 60-70℃ for 15-20 minutes to make the moisture content ≤2%;
[0033] S2: Preparation of modified functional components: Short-cut carbon fibers are ultrasonically dispersed in deionized water to obtain carbon fiber dispersion; metal salts or nano-metal particles are dispersed in a mixed solution of ethanol and deionized water to obtain metal functional liquid; and the two are mixed at a volume ratio of 3:1 to 5:1 to obtain composite functional liquid.
[0034] S3: Composite modification treatment, immerse the pretreated crepe paper substrate in the composite functional liquid, soak at 40-60℃ for 10-30 minutes and then roll coat to remove excess liquid;
[0035] S4: Wrinkle setting and drying. The modified crepe paper is placed in a setting device with tension control and dried with hot air at 60-80℃ for 20-30 minutes to maintain the original wrinkle shape.
[0036] S5: Post-treatment and performance control. The dried semi-finished product is cured at 90-110℃ for 15-20 minutes, and then the surface resistivity is adjusted to 10 by short-time heat treatment at 120-140℃ or by additional spraying of conductive additives. 3 Ω・cm~10 10 Ω・cm;
[0037] S6: Finished product inspection and packaging. After performance testing according to JB / T10441.2-2004 standard, the finished product shall be stored in a moisture-proof vacuum package.
[0038] The metallic element is selected from silver, copper, nickel, and aluminum, and is introduced in the form of nanoparticle metal salts.
[0039] The mass of chopped carbon fibers accounts for 1%–15% of the total mass of semiconductor crepe paper, and the mass of metal elements accounts for 0.5%–8% of the total mass of semiconductor crepe paper.
[0040] Ordinary plant fiber crepe paper is made of wood pulp or bamboo pulp, with an initial basis weight of 80–100 g / m³. 2 The thickness is 0.2 to 0.3 mm.
[0041] Modified functional components are incorporated into the substrate of ordinary plant fiber crepe paper through impregnation coating or in-situ polymerization.
[0042] Semiconductor crepe paper is used in transformer insulation structures, electrostatic protection of electronic components, and electromagnetic shielding applications.
[0043] The carbon fiber dispersion in S2 has a mass concentration of 0.5% to 2%, and 0.1% to 0.3% of polyvinylpyrrolidone is added as a dispersant; the metal functional liquid in S2 has a mass concentration of 0.3% to 1.0%.
[0044] The composite modification treatment in S3 can be replaced by in-situ polymerization. First, the substrate is immersed in a metal salt precursor solution, then mixed with a carbon fiber dispersion, and the metal salt is reduced in situ to nano-metal particles by UV initiation or low-temperature heating at 50-70°C.
[0045] In S4, flexible pressure rollers are used to help fix the fold spacing, ensuring that the wrinkle retention rate is ≥95%.
[0046] Working principle:
[0047] In use, the selected short-cut carbon fibers are conductive, and when combined with easily conductive metals such as silver and copper, they are mixed in water to create a composite functional liquid. Ordinary crepe paper is soaked in the composite functional liquid, and these conductive components slowly seep into the fiber gaps of the paper and firmly adhere to the surface of the paper, just like building countless tiny "conductive paths" inside and on the surface of the paper. The carbon fibers are responsible for building the main "conductive framework," and the metal particles fill the gaps. The two work together to turn the originally non-conductive paper into a semiconductor with just the right amount of conductivity (not too strong to cause a short circuit, nor too weak to be effective). The entire process is carried out at low temperatures (such as drying at 60-80℃ and curing at 90-110℃), and special equipment is used to control the tension of the paper. Soft pressure rollers are used to fix the crease spacing to prevent the high temperature from flattening or deforming the creases. Therefore, the final paper is both conductive and has the same creases as the original ordinary crepe paper.
[0048] The basic principles, main features, and advantages of this invention have been described above. Those skilled in the art should understand that this invention is not limited to the above embodiments. The embodiments and descriptions in the specification are merely principles of the invention. Various changes and modifications can be made without departing from the spirit and scope of the invention, and all such changes and modifications fall within the scope of the invention as claimed. The scope of protection claimed by this invention is defined by the appended claims and their equivalents.
Claims
1. A semiconductor crepe paper, characterized in that, Includes substrate: ordinary plant fiber crepe paper that retains its original wrinkled shape; The modified functional components include chopped carbon fibers and metal elements, wherein the chopped carbon fibers and metal elements are synergistically dispersed in the fiber gaps and surface of the ordinary plant fiber crepe paper. The surface resistivity of the semiconductor crepe paper is 10. 3 Ω・cm-10 10 Ω・cm, and the number of wrinkles is 8-10 per 10mm.
2. A method for preparing semiconductor crepe paper, characterized in that: Includes the following steps: S1: Substrate pretreatment: Dry ordinary plant fiber crepe paper at 60-70℃ for 15-20 minutes to make the moisture content ≤2%; S2: Preparation of modified functional components: Short-cut carbon fibers are ultrasonically dispersed in deionized water to obtain carbon fiber dispersion; metal salts or nano-metal particles are dispersed in a mixed solution of ethanol and deionized water to obtain metal functional liquid; and the two are mixed at a volume ratio of 3:1 to 5:1 to obtain composite functional liquid. S3: Composite modification treatment, immerse the pretreated crepe paper substrate in the composite functional liquid, soak at 40-60℃ for 10-30 minutes and then roll coat to remove excess liquid; S4: Wrinkle setting and drying. The modified crepe paper is placed in a setting device with tension control and dried with hot air at 60-80℃ for 20-30 minutes to maintain the original wrinkle shape. S5: Post-treatment and performance control. The dried semi-finished product is cured at 90-110℃ for 15-20 minutes, and then the surface resistivity is adjusted to 10 by short-time heat treatment at 120-140℃ or by additional spraying of conductive additives. 3 Ω・cm~10 10 Ω・cm; S6: Finished product inspection and packaging. After performance testing according to JB / T10441.2-2004 standard, the finished product shall be stored in a moisture-proof vacuum package.
3. The semiconductor crepe paper as described in claim 1, characterized in that: The metal element is selected from silver, copper, nickel, and aluminum, and is introduced in the form of nanoparticle metal salts.
4. The semiconductor crepe paper as described in claim 1, characterized in that: The chopped carbon fibers account for 1% to 15% of the total mass of the semiconductor crepe paper, and the metal elements account for 0.5% to 8% of the total mass of the semiconductor crepe paper.
5. The semiconductor crepe paper as described in claim 1, characterized in that: The ordinary plant fiber crepe paper is wood pulp fiber paper or bamboo pulp fiber paper, with an initial basis weight of 80-100 g / m³. 2 The thickness is 0.2 to 0.3 mm.
6. The semiconductor crepe paper as described in claim 1, characterized in that: The modified functional components are incorporated into the substrate of the ordinary plant fiber crepe paper by impregnation coating or in-situ polymerization.
7. The semiconductor crepe paper as described in claim 1, characterized in that: The semiconductor crepe paper is used in transformer insulation structures, electrostatic protection of electronic components, and electromagnetic shielding applications.
8. The method for preparing semiconductor crepe paper as described in claim 2, characterized in that: The carbon fiber dispersion in S2 has a mass concentration of 0.5% to 2%, and 0.1% to 0.3% of polyvinylpyrrolidone is added as a dispersant; the metal functional liquid in S2 has a mass concentration of 0.3% to 1.0%.
9. The method for preparing semiconductor crepe paper as described in claim 2, characterized in that: The composite modification treatment described in S3 can be replaced by in-situ polymerization, in which the substrate is first immersed in a metal salt precursor solution, then mixed with a carbon fiber dispersion, and the metal salt is reduced in situ to nano-metal particles by UV initiation or low-temperature heating at 50-70°C.
10. The method for preparing semiconductor crepe paper as described in claim 2, characterized in that: In step S4, a flexible pressure roller is used to help fix the fold spacing, ensuring that the wrinkle retention rate is ≥95%.