Phosphorus emitter passivation structure and preparation method thereof

By introducing high concentrations of carbon and/or nitrogen atoms into the doped region of the phosphorus emitter, combined with the partitioned passivation technology of nano-silicon oxide layer and conductive channel, the problem of poor passivation effect of phosphorus emitter in P-type battery is solved, achieving lower recombination current and higher battery efficiency.

CN121751817APending Publication Date: 2026-03-27CHINA SCI & TECH (NINGBO) CO LTD
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Patent Information

Application Number
CN202411347184.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-09-26
Publication Date
2026-03-27

AI Technical Summary

Technical Problem

In the existing technology, the passivation effect of the phosphorus emitter in P-type batteries is not good, resulting in large recombination losses and high contact resistivity, which affects the improvement of battery efficiency.

Method used

By employing a partitioned passivation technique, a high concentration of carbon and/or nitrogen atoms is introduced into the doped region of the phosphorus emitter, combined with a nano-silicon oxide layer and conductive channels, to avoid the adverse effects of the passivation structure on the contact resistivity. Furthermore, defect states are eliminated through high-temperature annealing and electrical injection.

Benefits of technology

It significantly reduced the surface saturation current density of the phosphorus emitter, improved the interface passivation effect, reduced the recombination current, enhanced the contact resistivity of the battery, and improved the battery efficiency.

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Abstract

The invention provides a phosphorus emitter passivation structure and a preparation method thereof, the passivation structure comprises a phosphorus emitter, the phosphorus emitter comprises silicon, phosphorus, hydrogen, carbon and / or nitrogen, the surface of the phosphorus emitter is provided with a nano silicon oxide layer, the phosphorus emitter comprises an electric injection region and a doped region, the electric injection region is provided with a conductive layer at a corresponding position, and the doped region is provided with a conductive layer at a corresponding position. The conductive layer is used for being connected with a metal electrode, a passivation anti-reflection layer is arranged at the corresponding position of the doped region, and the carbon and / or nitrogen concentration of the electric injection region is higher than that of the electric injection region. Partitioned passivation is performed on the surface of the phosphorus emitter, and carbon and / or nitrogen atoms are introduced into the doped region, so that the interface passivation effect is improved; the electric injection region is not subjected to carbon and nitrogen doping and is not provided with a passive film, so that the influence of passivation on the contact resistivity is reduced; a conductive channel is introduced into the electric injection region for electric injection, so that the defect state of the phosphorus emitter can be further eliminated, and the recombination current is reduced.
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