A lithium-doped crystalline silicon photovoltaic cell, silicon wafer, ingot, and doping method thereof

By doping crystalline silicon photovoltaic cells with impurities such as lithium and boron, the problem that crystalline silicon photovoltaic cells cannot effectively absorb 1250nm photons has been solved, improving photoelectric conversion efficiency and stability, especially in high-energy radiation environments.

CN121815811BActive Publication Date: 2026-05-26云南宇泽新能源股份有限公司
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Patent Information

Application Number
CN202610268852.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2026-03-06
Publication Date
2026-05-26
Estimated Expiration
2046-03-06

AI Technical Summary

Technical Problem

Existing crystalline silicon photovoltaic cells cannot effectively absorb photons around 1250nm, resulting in low photoelectric conversion efficiency. Especially in certain tandem cells, the bandgap width of the bottom cell needs to be reduced to expand the absorption bandwidth, but this will reduce the output voltage.

Method used

p-type lithium-silicon photovoltaic cells are formed by doping crystalline silicon with impurities of lithium and boron. Lithium reduces the band gap and extends the absorption wavelength. The combined doping of lithium and boron stabilizes the performance of photovoltaic cells under high-energy radiation. The design of lithium-oxygen or lithium-boron regions improves the photoelectric conversion efficiency in ground-based or space-based photovoltaic cells.

Benefits of technology

Improving the electrical conductivity and photoelectric conversion efficiency of p-type silicon materials under high-energy radiation environment, reducing silicon wafer thickness, and enhancing the stability and overall photoelectric conversion efficiency of photovoltaic cells.

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Abstract

This invention discloses a lithium-doped crystalline silicon photovoltaic cell, silicon wafer, ingot, and doping method thereof, belonging to the field of photovoltaic cells. By combining appropriate amounts of impurity lithium and impurity boron with lithium to form p-type first lithium silicon, lithium, with an electronegativity of only 0.98, saturates some of the boron atom holes when not exposed to high-energy space radiation. Upon exposure to high-energy space radiation, on the one hand, the outer electrons of lithium are easily attracted by electron traps, objectively passivating the electron traps and "releasing" the boron atom holes. As a result, the majority carrier holes in the p-type silicon material increase, and the conductivity increases instead of decreasing. On the other hand, due to the "accompaniment" of positive lithium ions to the electron traps, the probability of the electron traps capturing photogenerated minority carrier holes is greatly reduced, which is beneficial to improving the photoelectric conversion efficiency of the space cell.
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