Management device, substrate processing device and computer program product

Abstract

The invention relates to a management apparatus, a substrate processing apparatus, and a computer program product for preventing setting of an erroneous correction value when temperature control of a wafer is performed by mounting a radiation temperature measurer on the substrate processing apparatus. The management device includes: a registration unit that registers a correction table that associates instrument error data of each radiation temperature measurer with information for identifying each radiation temperature measurer with respect to a reference radiation temperature measurer; and a transmission unit that transmits a correction table to the substrate processing apparatus when a request for transmission of the correction table including information for identifying a specific radiation temperature meter is received from the substrate processing apparatus on which the specific radiation temperature meter is mounted. And transmitting a correction table corresponding to the information for identifying the specific radiation temperature measurer to the substrate processing device of the requester.

Description

Technical Field

[0001] This invention relates to management devices, substrate processing devices, and computer program products. Background Technology

[0002] In a substrate processing apparatus, for example, when performing wafer temperature control using a detachable radiation temperature measuring device, the operator installs one of the maintained radiation temperature measuring devices into the substrate processing apparatus and sets a correction value corresponding to the instrument error of the radiation temperature measuring device. This allows the substrate processing apparatus to perform wafer temperature control based on highly accurate temperature data. On the other hand, as described above, when using a structure where the correction value is set manually, operator errors may occur, leading to incorrect correction values ​​being set.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2017-17104 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] The invention aims to avoid setting incorrect correction values ​​when performing wafer temperature control by mounting a radiation temperature measuring device on a substrate processing device.

[0008] Technical means for solving technical problems

[0009] One aspect of the management device of the present invention has, for example, the following structure: The management device includes: a registration unit for registering correction tables that associate instrument error (i.e., meter error) data of each radiation temperature measuring instrument relative to a reference radiation temperature measuring instrument with information for identifying each radiation temperature measuring instrument; and a transmission unit that, upon receiving a transmission request from a substrate processing device equipped with a specific radiation temperature measuring instrument, transmits a correction table corresponding to the information for identifying the specific radiation temperature measuring instrument to the requesting substrate processing device.

[0010] One aspect of the present invention provides a management procedure for causing a computer to perform the following steps: a step of registering a correction table, which associates instrument error data of each radiation temperature measuring instrument relative to a reference radiation temperature measuring instrument with information for identifying each radiation temperature measuring instrument; and a step of sending, upon receiving a request from a substrate processing device equipped with a specific radiation temperature measuring instrument, a correction table containing information for identifying the specific radiation temperature measuring instrument is sent to the requesting substrate processing device.

[0011] One aspect of the present invention provides a temperature control program for causing a computer to perform the following steps: an acquisition step, acquiring instrument error data by calculating the difference between: reference radiation temperature data measured by mounting a reference radiation temperature measuring device among a plurality of radiation temperature measuring devices on a substrate processing device, and radiation temperature data measured by mounting radiation temperature measuring devices other than the reference radiation temperature measuring device among the plurality of radiation temperature measuring devices on the substrate processing device; and a transmission step, transmitting a correction table to a management device for managing correction tables for radiation temperature measuring devices, the correction table containing the acquired instrument error data and information for identifying radiation temperature measuring devices other than the reference radiation temperature measuring device.

[0012] One aspect of the present invention is a temperature control program for causing a computer to perform the following steps: a sending step, in the case of an installed radiation temperature measuring device, acquiring information for identifying the radiation temperature measuring device, and sending a request for a correction table containing the acquired information to a management device for managing correction tables for the radiation temperature measuring device; a saving step, saving the correction table for the installed radiation temperature measuring device received from the management device in response to the sending of the correction table request; and a correction step, using the saved correction table to correct temperature data measured by the installed radiation temperature measuring device.

[0013] Invention Effects

[0014] According to the present invention, when a radiation temperature measuring device is installed in a substrate processing apparatus to perform temperature control of a wafer, it is possible to avoid setting incorrect correction values. Attached Figure Description

[0015] Figure 1 This is a diagram illustrating an example of the system structure of a management system.

[0016] Figure 2 It is a diagram that shows the process overview of each stage in the management system.

[0017] Figure 3A The first figure shows a structural example of a substrate processing apparatus for performing film formation.

[0018] Figure 3B The second figure shows a structural example of a substrate processing apparatus for performing film formation.

[0019] Figure 3C This is a diagram showing an example of the installation of a radiation temperature measuring device mounted on a substrate processing apparatus.

[0020] Figure 3D This is a diagram illustrating an example of the operation of a radiation temperature measuring device installed on a substrate processing apparatus.

[0021] Figure 4 This is a diagram illustrating an example of the hardware structure of the control device in a substrate processing apparatus.

[0022] Figure 5 This diagram illustrates an example of the functional structure of the temperature control unit during the preparation stage of a substrate processing apparatus.

[0023] Figure 6A This is a graph representing an example of reference radiation temperature data.

[0024] Figure 6B This is a graph showing an example of radiation temperature data and an example of a correction table.

[0025] Figure 7 This is an example of a flowchart illustrating the preparation process performed by the substrate processing device during the preparation phase.

[0026] Figure 8 This diagram illustrates an example of the functional structure of the temperature control unit in the measurement stage of a substrate processing apparatus.

[0027] Figure 9 This is an example of a flowchart illustrating the measurement processing flow of the substrate processing device performed during the measurement phase.

[0028] Figure 10 This is a diagram illustrating an example of the hardware structure of a management device.

[0029] Figure 11 This is a diagram illustrating an example of the functional structure of a management device.

[0030] Figure 12 It is a flowchart representing the management process performed by the management device.

[0031] Figure 13 This diagram illustrates a specific example of the processing performed by the display unit of the management device.

[0032] Figure 14 This is a sequence diagram representing an example of the overall processing of the management system.

[0033] Explanation of reference numerals in the attached figures

[0034] 100: Management System

[0035] 110: Management Device

[0036] 120_1~120_N: Substrate processing device

[0037] 130_0: Reference radiation temperature measuring instrument

[0038] 130_1~130_M: Radiation temperature measuring instrument

[0039] 300: Temperature Control Department

[0040] 501: Temperature Data Acquisition Department

[0041] 502: Serial Number Acquisition Department

[0042] 503: Instrument Error Data Acquisition Department

[0043] 504: Correction Table Generation Department

[0044] 505: Correction Form Sending Department

[0045] 801: Temperature Data Acquisition Department

[0046] 802: Serial Number Sending Unit

[0047] 803: Correction Table Receiving Department

[0048] 804: Correction Department

[0049] 1101: Registration Department

[0050] 1102: Sending Department

[0051] 1103: Display section. Detailed Implementation

[0052] Hereinafter, various embodiments will be described with reference to the accompanying drawings. Furthermore, in this specification and the accompanying drawings, constituent elements having substantially the same functional structure are labeled with the same reference numerals, and repeated descriptions are omitted.

[0053] [First Implementation Method]

[0054] <System Structure of the Management System>

[0055] First, the system structure of the management system including the management device and the substrate processing device in the first embodiment will be explained. Figure 1 This is a diagram illustrating an example of the system structure of a management system.

[0056] like Figure 1As shown, the management system 100 includes a management device 110 and multiple substrate processing devices ( Figure 1 In this example, there are N substrate processing devices (substrate processing devices 120_1 to 120_N). In the management system 100, the management device 110 is communicatively connected to each substrate processing device via a network 140.

[0057] In addition, such as Figure 1 As shown, the management system 100 includes multiple radiation temperature measuring instruments that are detachable from each of the N substrate processing devices. Figure 1 In the example, there are M+1 radiation temperature measuring instruments, namely the reference radiation temperature measuring instrument 130_0 and radiation temperature measuring instruments 130_1 to 130_M.

[0058] The reference radiation temperature measuring instrument 130_0 is used as a reference when acquiring the instrument error data of each of the multiple radiation temperature measuring instruments 130_1 to 130_M. The substrate processing device 120_1 acquires the instrument error data by calculating the difference between the radiation temperature data measured by each of the radiation temperature measuring instruments 130_1 to 130_M and the reference radiation temperature data measured by the reference radiation temperature measuring instrument 130_0.

[0059] Furthermore, in this embodiment, when acquiring instrument error data, the case where the radiation temperature measuring device is mounted on the substrate processing apparatus 120_1 is described as above. However, the substrate processing apparatus on which the radiation temperature measuring device is mounted when acquiring instrument error data is not limited to the substrate processing apparatus 120_1, and may be any of the other substrate processing apparatuses 120_2 to 120_N.

[0060] Radiation temperature measuring instruments 130_1 to 130_M are, for example, radiation temperature measuring instruments that have undergone maintenance (i.e., have been maintained). Before temperature control of the wafer in any of the substrate processing apparatuses 120_2 to 120_N, radiation temperature measuring instruments 130_1 to 130_M generate correction tables in advance based on instrument error data from the reference radiation temperature measuring instrument 130_0. Furthermore, each generated correction table is registered by the substrate processing apparatus 120_1 to the management device 110.

[0061] The substrate processing apparatus 120_1 is used when acquiring instrument error data for the reference radiation temperature measuring instrument 130_0 and the radiation temperature measuring instruments 130_1 to 130_M. The substrate processing apparatus 120_1 generates a correction table for each radiation temperature measuring instrument by associating the instrument error data obtained for each instrument with its serial number. That is, each correction table generated by the substrate processing apparatus 120_1 associates the instrument error data of each radiation temperature measuring instrument 130_1 to 130_M relative to the reference radiation temperature measuring instrument 130_0 with its serial number.

[0062] In the substrate processing apparatuses 120_2 to 120_N, when performing wafer temperature control, any one of the radiation temperature measuring devices 130_1 to 130_M may be installed. The specific substrate processing apparatus on which radiation temperature measuring device is installed is arbitrary.

[0063] When a radiation temperature measuring device is installed, the substrate processing devices 120_2 to 120_N obtain the serial number of the radiation temperature measuring device and request a correction table corresponding to the obtained serial number from the management device 110.

[0064] Substrate processing devices 120_2 to 120_N each acquire correction tables sent from management device 110, and use the acquired correction tables to correct for temperature data measured by the installed radiation temperature measuring device. Substrate processing devices 120_2 to 120_N each use the corrected temperature data to perform temperature control of the wafer.

[0065] The management device 110 registers each correction table sent from the substrate processing device 120_1. In addition, when a correction table request (send request) is sent from any of the substrate processing devices 120_2 to 120_N, the management device 110 reads the correction table corresponding to the sequence number contained in the request and sends it to the requesting substrate processing device.

[0066] In this way, the management system 100 generates correction tables for the radiation temperature measuring instruments 130_1 to 130_M respectively by associating pre-obtained instrument error data with serial numbers, and registers them in the management device 110. Then, when any one of the radiation temperature measuring instruments 130_1 to 130_M is installed in any one of the substrate processing devices 120_2 to 120_N, the management system 100 determines the correction table for the installed radiation temperature measuring instrument based on the serial number. Moreover, the management system 100 sends the determined correction table to the corresponding substrate processing device. Thus, in the substrate processing devices 120_2 to 120_N, the temperature data measured by the installed radiation temperature measuring instruments can be corrected using appropriate correction tables.

[0067] That is, in the management system 100, the various correction tables used by the multiple radiation temperature measuring instruments 130_1 to 130_M installed on the substrate processing devices 120_2 to 120_N are automatically managed using serial numbers. As a result, according to the management system 100, situations such as operator setting errors that may occur when manually setting correction values ​​for the substrate processing devices can be eliminated, thereby avoiding the setting of incorrect correction values.

[0068] <Processing at Each Stage of the Management System>

[0069] Next, an overview of the processing at each stage of the management system 100 will be provided. Figure 2 This is a diagram that shows the outline of the processing at each stage of the management system. For example... Figure 2 As shown, the processing of the management system 100 can be roughly divided into the preparation stage, the registration stage, and the measurement stage.

[0070] During the preparation phase, the substrate processing device 120_1 acquires:

[0071] • The reference radiation temperature data of the wafer measured by the reference radiation temperature measuring instrument 130_0, and

[0072] • The radiation temperature data of the wafer measured by any one of the radiation temperature measuring instruments 130_1 to 130_M.

[0073] The difference is then calculated. Thus, the substrate processing unit 120_1 acquires the instrument error data and generates a correction table.

[0074] During the registration phase, the management device 110 registers various correction tables, etc., sent from the substrate processing device 120_1 and used by the radiation temperature measuring devices 130_1 to 130_M.

[0075] During the measurement phase, when any one of the radiation temperature measuring devices 130_1 to 130_M is installed in the substrate processing devices 120_2 to 120_N, the following operations are performed:

[0076] • Obtain the serial number of the installed radiation temperature measuring device and send a request (send request) to the management device 110 containing a correction table containing the obtained serial number.

[0077] Receive and save the requested correction table.

[0078] • Correct the temperature data measured by the installed radiation temperature measuring instrument using the saved correction table.

[0079] • Perform temperature control on the chip using the corrected temperature data.

[0080] <Structure of the Substrate Processing Device>

[0081] Next, the structure of the substrate processing apparatus 120_1 to 120_N, which performs temperature control of the wafer, will be described. Here, the description will take the case where the substrate processing apparatus 120_1 to 120_N is a substrate processing apparatus that performs film deposition processing on the wafer as an example.

[0082] (1) Structure of the substrate processing device for film formation

[0083] Figure 3A and Figure 3B The first and second figures show examples of the structure of a substrate processing apparatus for performing film deposition. Furthermore, since substrate processing apparatuses 120_1 to 120_N all have the same structure, the structure of substrate processing apparatus 120_2 with a radiation temperature measuring device 130_1 installed will be described here as an example.

[0084] like Figure 3A As shown, the substrate processing apparatus 120_2 for film formation has a flat, approximately circular processing container 11 and a disk-shaped rotary table 12 horizontally disposed within the processing container 11. The processing container 11 is disposed in atmospheric air and consists of a top plate 13 and a container body 14 forming the side walls 14a and bottom 14b of the processing container 11. A sealing member 11a is used to maintain an airtight seal inside the processing container 11, and a cover 14c is used to close the central portion of the container body 14. A rotary drive mechanism 12a rotates the rotary table 12 in the circumferential direction. The rotary drive mechanism 12a inputs signals regarding the rotational position and speed of the rotary table 12 to the control device 5.

[0085] The radiation temperature measuring instrument 130_1 is installed in the gap 41 ( Figure 3B Above the rotating stage 12. The radiation temperature measuring instrument 130_1 measures the temperature data of the wafer W placed on the rotating stage 12 while the rotating stage 12 is rotating.

[0086] Multiple programs are installed in the control device 5, and the control device 5 implements the temperature control unit 300 by executing the temperature control program therein. During the film formation process, the temperature control unit 300 controls the heater drive unit 6 to perform temperature control of the wafer W based on the temperature data measured by the heater thermocouple 3 and the temperature data measured by the radiation temperature measuring device 130_1.

[0087] like Figure 3B As shown, five recesses 16 are formed on the surface of the rotary table 12 along the rotation direction of the rotary table 12 (arrow 27). An openable and closable gate valve 18 is installed at the transport port 17. When the transport mechanism 2A enters the processing container 11 from the transport port 17 while holding the wafer W, a lifting pin (not shown) extends from the hole in the recess 16 facing the transport port 17 on the rotary table 12 and lifts (raises) the wafer W. Thus, the wafer W is transferred between the recess 16 and the transport mechanism 2A.

[0088] On the rotary table 12, in the following order arranged circumferentially are: a rod-shaped first reactant gas nozzle 21, a separating gas nozzle 22, a second reactant gas nozzle 23, and a separating gas nozzle 24, extending from the outer periphery of the rotary table 12 towards the center. These gas nozzles 21-24 have openings at the bottom, supplying gas radially (radially) along the rotary table 12. The first reactant gas nozzle 21 ejects BTBAS (di-tert-butylaminosilane) gas, and the second reactant gas nozzle 23 ejects O3 (ozone) gas. The separating gas nozzles 22 and 24 eject N2 (nitrogen) gas.

[0089] The top plate 13 of the processing container 11 has two downwardly projecting, fan-shaped protrusions 25, which are spaced apart in the circumferential direction. Separating gas nozzles 22 and 24 are respectively positioned to be embedded in the protrusions 25 and to divide the protrusions 25 in the circumferential direction. A first reactant gas nozzle 21 and a second reactant gas nozzle 23 are respectively positioned at a distance from each of the protrusions 25.

[0090] A heater 20 is provided below the rotary table 12. The heater 20 is an example of a heating mechanism for heating the wafer W placed on the rotary table 12. Specifically, the heater 20 is arranged in a concentric circle with respect to the rotation center of the rotary table 12. As the heater 20, resistance heaters such as metal wire heaters, molybdenum heaters, and carbon wire heaters, as well as induction heaters, can be used.

[0091] The heating zone of the processing container 11 is divided into multiple sections in order to control the temperature radially on the rotary table 12. Figure 3AIn this example, there are three zones: Za, Zb, and Zc. The heater 20 is divided into three zone heaters 20a, 20b, and 20c, corresponding to each zone Za, Zb, and Zc, so that each can be controlled independently. Furthermore, the number of zones is not limited to three; it can be one, two, or even four or more zones.

[0092] Near each of the regional heaters 20a, 20b, and 20c, three heater thermocouples 3a, 3b, and 3c are installed to measure their temperature. Hereinafter, the three heater thermocouples 3a, 3b, and 3c will be referred to as heater thermocouple 3.

[0093] Thermocouples 3 are used to measure the temperature of heater 20. Specifically, one end of each thermocouple 3a, 3b, and 3c is inserted into the bottom of the rotating table 12 through the bottom 14b of the container body 14 in an airtight manner. On the other hand, the other end of each thermocouple 3a, 3b, and 3c is connected to the control device 5, and the temperature data measured by each thermocouple 3a, 3b, and 3c is input to the control device 5.

[0094] (2) Installation example of radiation temperature measuring device

[0095] Next, an example of the installation of the radiation temperature measuring device 130_1 installed in the substrate processing apparatus 120_2 will be described. Figure 3C This is a diagram showing an example of the installation of a radiation temperature measuring device mounted on a substrate processing apparatus.

[0096] like Figure 3C As shown, a slit 41 extending radially from the rotary table 12 is provided on the top plate 13, and a lower side window 42 and an upper side window 43 are provided to cover the slit 41 from top to bottom. The lower side window 42 and the upper side window 43 are made of materials such as sapphire to allow infrared rays radiated from the surface side of the rotary table 12 to pass through, so that temperature data can be measured by the radiation temperature measuring device 130_1.

[0097] Figure 3C The height H from the surface of the rotary table 12 to the lower end of the radiation temperature measuring device 130_1 is, for example, 500 mm. The radiation temperature measuring device 130_1 guides the infrared rays radiated from the temperature measurement area of ​​the rotary table 12 to the detection unit 301, which will be described later. The detection unit 301 acquires temperature data corresponding to the amount of infrared rays. The acquired temperature data is sent to the control device 5.

[0098] (3) Example of operation of radiation temperature measuring instrument

[0099] Next, an example of the operation of the radiation temperature measuring device 130_1 installed in the substrate processing device 120_2 will be described. Figure 3DThis is a diagram illustrating an example of the operation of a radiation temperature measuring device installed on a substrate processing apparatus.

[0100] like Figure 3D As shown, the radiation temperature measuring device 130_1 includes a rotating body 302 composed of a servo motor rotating at 50Hz. The rotating body 302 is triangular in top view and rotates about a rotation axis 306. Thus, the rotating body 302 reflects infrared radiation from the temperature measurement area 310 of the rotating stage 12, including the wafer W, through any of the reflecting surfaces 303-305 as indicated by the arrows in the figure, and guides it to the detection unit 301. Furthermore, the rotating body 302 scans the position of the temperature measurement area 310 by moving it radially along the rotating stage 12.

[0101] The detection unit 301 can detect the temperature of a predetermined number of infrared rays (e.g., 128 times) in the radial direction of the rotary table 12 by continuously introducing infrared rays from a reflective surface. As the rotating body 302 rotates, the reflective surfaces 303 to 305 are sequentially positioned on the infrared light path, thereby enabling repeated scanning from the inside to the outside of the rotary table 12.

[0102] As an example, the scanning speed of the radiation temperature measuring device 130_1 is approximately 150 times per second. Additionally, the diameter of the temperature measuring area 310 is approximately 5 mm. Furthermore, the scanning range extends from a position on the rotary stage 12 that is further inward than the recess 16 on which the wafer W is mounted to the outer periphery of the rotary stage 12.

[0103] The scan performed by the radiation temperature measuring instrument 130_1 is carried out while the rotary table 12 is rotating. The rotation speed of the rotary table 12 is, for example, 240 revolutions per minute.

[0104] (4) Example of the operation of a substrate processing device equipped with a radiation temperature measuring device during film formation.

[0105] Next, the main references are... Figure 3A and Figure 3B This describes the operation of the substrate processing device 120_2, which is equipped with a radiation temperature measuring device 130_1, during the film formation process.

[0106] When performing film deposition on wafer W, the substrate processing apparatus 120_2 is opened and set to... Figure 3BThe gate valve 18 of the transport port 17 is used. Thus, the wafer W is transferred by the transport mechanism 2A from the outside of the processing container 11 via the transport port 17 into the recess 16 of the rotary table 12. This transfer is performed by raising and lowering a lifting pin (not shown) from the bottom side of the processing container 11 through a through hole in the bottom surface of the recess 16 when the recess 16 is stopped facing the transport port 17. This transfer of the wafer W is performed by intermittently rotating the rotary table 12, thereby positioning the wafer W within the five recesses 16 of the rotary table 12.

[0107] Next, the substrate processing apparatus 120_2 closes the gate valve 18 and uses a vacuum pump (not shown) connected to the exhaust port 26 to evacuate the processing container 11 into a vacuum state. The substrate processing apparatus 120_2 ejects N2 gas from the separating gas nozzle at a predetermined flow rate, supplying N2 gas at a predetermined flow rate to the space 28 in the central region of the rotary table 12. Simultaneously, the substrate processing apparatus 120_2 uses a pressure regulating mechanism (not shown) connected to the exhaust port 26 to adjust the pressure inside the processing container 11 to a preset level.

[0108] Next, while rotating the rotary table 12 clockwise, the substrate processing apparatus 120_2 heats the wafer W to, for example, 400°C using the heater 20, supplies BTBAS gas from the first reaction gas nozzle 21, and supplies O3 gas from the second reaction gas nozzle 23.

[0109] When wafer W passes through the first processing region P1, substrate processing apparatus 120_2 supplies BTBAS gas, which serves as a raw material gas, from the first reactive gas nozzle 21. As a result, BTBAS gas is adsorbed onto the surface of wafer W. Substrate processing apparatus 120_2 then uses the rotation of the rotary stage 12 to purge the wafer W, whose surface has adsorbed BTBAS gas, through the separation region D1 equipped with the separation gas nozzle 22, before it re-enters the first processing region P1. Thus, because BTBAS gas is supplied to wafer W from the first reactive gas nozzle 21, BTBAS gas is adsorbed onto the surface of wafer W.

[0110] As described above, the substrate processing apparatus 120_2 supplies BTBAS gas and O3 gas into the processing container 11 by continuously rotating the rotary stage 12 multiple times. As a result, the reaction product SiO2 is deposited on the surface of the wafer W to form a SiO2 film (silicon oxide film).

[0111] Here, during the film deposition process of wafer W, thermocouples 3a, 3b, and 3c are used to measure the temperature data of heaters 20a, 20b, and 20c corresponding to regions Za, Zb, and Zc, and the data is input to the control device 5. Additionally, the temperature data of wafer W is measured by the radiation temperature measuring device 130_1 and input to the control device 5. Furthermore, the temperature data measured by the radiation temperature measuring device 130_1 is corrected using a correction table.

[0112] The temperature control unit 300 of the control device 5 controls the heater drive unit 6 based on the temperature data measured by the heater thermocouple 3 and the corrected temperature data measured by the radiation temperature measuring instrument 130_1 and corrected using a correction table. Thus, the heater drive unit 6 controls the heaters 20a, 20b, and 20c in each region to perform temperature control on the surface of the wafer W.

[0113] <Hardware structure of the control device in the substrate processing unit>

[0114] Next, the hardware structure of the control device 5 of each of the substrate processing devices 120_1 to 120_N will be described. Figure 4 This is a diagram illustrating an example of the hardware structure of a control device. For example... Figure 4 As shown, the control device 5 includes a processor 401, a memory 402, an auxiliary storage device 403, a connection device 404, and a communication device 405. Furthermore, the various hardware components included in the control device 5 are interconnected via a bus 406.

[0115] The processor 401 has various computing devices such as a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). The processor 401 reads various programs (such as temperature control programs) into the memory 402 and executes them.

[0116] The memory 402 includes main storage devices such as ROM (Read Only Memory) and RAM (Random Access Memory). The processor 401 and the memory 402 together form a computer, and the processor 401 enables the computer to perform various functions by executing various programs read from the memory 402.

[0117] The auxiliary storage device 403 stores various programs and various information used by the processor 401 when the programs are executed.

[0118] The connecting device 404 is a connecting device that connects to various devices 411 (operating devices, display devices, rotary drive mechanism 12a, heater thermocouple 3, radiation temperature measuring instrument 130_1, heater drive unit 6, etc.) within the substrate processing device.

[0119] Communication device 405 is a communication device used to send and receive various information between management device 110 and control device 5.

[0120] <Details of the functions of the control devices in the substrate processing apparatus (preparation stage)>

[0121] Next, details of the function of the control device 5 in the preparation stage will be explained, including the function of the temperature control unit 300 implemented in the control device 5 of the substrate processing apparatus 120_1 during the preparation stage.

[0122] (1) Functional structure of the temperature control unit

[0123] Figure 5 This diagram illustrates an example of the functional structure of the temperature control unit during the preparation stage of a substrate processing apparatus.

[0124] like Figure 5 As shown, during the preparation stage, the temperature control unit 300 functions as a temperature data acquisition unit 501, a serial number acquisition unit 502, an instrument error data acquisition unit 503, a correction table generation unit 504, and a correction table sending unit 505.

[0125] When the reference radiation temperature measuring device 130_0 is installed on the substrate processing device 120_1, the temperature data acquisition unit 501 acquires reference radiation temperature data from the reference radiation temperature measuring device 130_0.

[0126] In addition, when the radiation temperature measuring device (here, radiation temperature measuring device 130_1) which is the object of generating the correction table is installed on the substrate processing device 120_1, the temperature data acquisition unit 501 acquires radiation temperature data from the radiation temperature measuring device 130_1.

[0127] The reference radiation temperature data acquired by the temperature data acquisition unit 501 includes temperature data for each region of the wafer that has undergone temperature control in each temperature range. The temperature data acquisition unit 501 then notifies the instrument error data acquisition unit 503 of the acquired reference radiation temperature data.

[0128] The radiation temperature data acquired by the temperature data acquisition unit 501 includes temperature data for each region of the chip that has undergone temperature control in each temperature range. The temperature data acquisition unit 501 then notifies the instrument error data acquisition unit 503 of the acquired radiation temperature data.

[0129] When the reference radiation temperature measuring device 130_0 is installed on the substrate processing device 120_1, the serial number acquisition unit 502 acquires information (serial number) identifying the reference radiation temperature measuring device 130_0 from the reference radiation temperature measuring device 130_0.

[0130] In addition, when the radiation temperature measuring device 130_1, which is the object of the correction table generation, is installed on the substrate processing device 120_1, the serial number acquisition unit 502 acquires information (serial number) that identifies the radiation temperature measuring device 130_1 from the radiation temperature measuring device 130_1.

[0131] The serial number acquisition unit 502 notifies the instrument error data acquisition unit 503 of the acquired serial number.

[0132] The instrument error data acquisition unit 503 is an example of an acquisition unit. When it is notified of the serial number of the identification reference radiation temperature measuring instrument 130_0, it saves the reference radiation temperature data notified by the temperature data acquisition unit 501 along with the serial number to the reference temperature storage unit 510.

[0133] When the instrument error data acquisition unit 503 is notified of the serial number of the radiation temperature measuring instrument 130_1, which is identified as the object to generate the correction table, it calculates the difference between the radiation temperature data notified by the temperature data acquisition unit 501 and the reference radiation temperature data stored in the reference temperature storage unit 510.

[0134] Specifically, the instrument error data acquisition unit 503 calculates the temperature data of each temperature range and each region of the wafer included in the reference radiation temperature data, and the difference between the temperature data of each temperature range and each region of the wafer included in the radiation temperature data. Thus, the instrument error data acquisition unit 503 acquires instrument error data containing the differences between each temperature range and each region of the wafer, and uses this data as the instrument error data of the radiation temperature measuring instrument 130_1.

[0135] The instrument error data acquisition unit 503 notifies the correction table generation unit 504 of the acquired instrument error data of the radiation temperature measuring instrument 130_1 along with the serial number of the radiation temperature measuring instrument 130_1.

[0136] The correction table generation unit 504 generates a correction table by associating (corresponding to) the instrument error data of the radiation temperature measuring device 130_1 notified by the instrument error data acquisition unit 503 with the serial number of the radiation temperature measuring device 130_1. In the correction table, the difference between each temperature range and each region of the wafer contained in the instrument error data is called a "correction value". The correction table generation unit 504 notifies the correction table sending unit 505 of the generated correction table.

[0137] The correction table sending unit 505 is an example of a sending unit. When a correction table is notified from the correction table generation unit 504, it accesses the management device 110 and sends the correction table for the radiation temperature measuring device 130_1. In addition, the correction table sending unit 505 sends the reference radiation temperature data stored in the reference temperature storage unit 510 to the management device 110.

[0138] (2) Reference radiation temperature data and correction table

[0139] Next, the reference radiation temperature data stored by the temperature control unit 300 in the reference temperature storage unit 510 during the preparation stage, and the correction table generated by the temperature control unit 300 will be explained. Figure 6A This is a graph representing an example of reference radiation temperature data.

[0140] like Figure 6A As shown, the reference radiation temperature data 600 contains the serial number that identifies the reference radiation temperature measuring device 130_0. Figure 6A The example indicates that the serial number of the identification reference radiation temperature measuring instrument 130_0 is "0000".

[0141] In addition, such as Figure 6A As shown, the reference radiation temperature data 600 contains temperature data for each temperature range and each region of the wafer, measured by the reference radiation temperature measuring device 130_0. Figure 6A The example shows temperature data for five regions of the chip within each of the five temperature ranges.

[0142] Figure 6B This is a diagram showing an example of radiation temperature data and a correction table, showing radiation temperature data 610 measured by radiation temperature measuring device 130_1 and correction table 620 generated based on radiation temperature data 610.

[0143] like Figure 6B As shown, the radiation temperature data 610 includes temperature data for each temperature range and each region of the wafer, measured by the radiation temperature measuring device 130_1. Figure 6B The example shows temperature data for five regions of the chip within each of the five temperature ranges.

[0144] In addition, such as Figure 6B As shown, the correction table 620 contains the serial number that identifies the radiation temperature measuring device 130_1. Figure 6B The example indicates that the serial number of the radiation temperature measuring device 130_1 is "0001".

[0145] In addition, such as Figure 6BAs shown, correction table 620 contains instrument error data, which includes correction values ​​for the differences between various temperature ranges and various regions of the wafer, calculated based on reference radiation temperature data 600 and radiation temperature data 610. Figure 6B The example indicates that it includes instrument error data, which contains the differences between the five regions of the wafer in each of the five temperature ranges as correction values.

[0146] <Processing flow of the substrate processing device during the preparation stage>

[0147] Next, the preparation process of the substrate processing device 120_1 executed in the preparation phase will be explained. Figure 7 This is a flowchart representing the preparation process of the substrate processing device during the preparation phase.

[0148] In step S701, the operator installs the reference radiation temperature measuring device 130_0 onto the substrate processing device 120_1.

[0149] In step S702, the substrate processing apparatus 120_1 acquires the serial number of the reference radiation temperature measuring device 130_0. Then, the substrate processing apparatus 120_1 begins temperature control of the wafer, and the reference radiation temperature measuring device 130_0 measures the temperature data of each region of the wafer for each temperature range. Thus, the substrate processing apparatus 120_1 acquires the reference radiation temperature data measured by the reference radiation temperature measuring device 130_0.

[0150] In step S703, the substrate processing device 120_1 saves the acquired (obtained) reference radiation temperature data and serial number.

[0151] In step S704, after the operator removes the reference radiation temperature measuring device 130_0, the radiation temperature measuring device 130_1, which is the object of the correction table generation, is installed on the substrate processing device 120_1.

[0152] In step S705, the substrate processing apparatus 120_1 acquires the serial number of the radiation temperature measuring device 130_1. Then, the substrate processing apparatus 120_1 begins temperature control of the wafer, and the radiation temperature measuring device 130_1 measures the temperature data of each region of the wafer for each temperature range. Thus, the substrate processing apparatus 120_1 acquires the radiation temperature data measured by the radiation temperature measuring device 130_1.

[0153] In step S706, the substrate processing device 120_1 obtains instrument error data by calculating the difference between the reference radiation temperature data and the radiation temperature data.

[0154] In step S707, the substrate processing device 120_1 generates a correction table by associating the instrument error data with the serial number of the radiation temperature measuring device 130_1 (corresponding to the error data).

[0155] In step S708, the substrate processing device 120_1 sends the reference radiation temperature data containing the serial number and the generated correction table to the management device 110.

[0156] <Details of the functions of the control devices in the substrate processing apparatus (measurement stage)>

[0157] Next, as a detail of the function of the control device 5 in the measurement stage, the details of the function of the temperature control unit 300 implemented in the control device 5 of the substrate processing apparatus 120_2 in the measurement stage will be explained.

[0158] (1) Functional structure of the temperature control unit

[0159] Figure 8 This diagram illustrates an example of the functional structure of the temperature control unit during the measurement phase of a control device in a substrate processing apparatus. Furthermore, as described above, during the measurement phase, the temperature control unit 300 controls the heater drive unit 6 based on temperature data measured by the heater thermocouple 3 and corrected temperature data measured by the radiation temperature measuring instrument 130_1 and corrected using a correction table. However, for the sake of simplicity, descriptions of the functions of processing the temperature data measured by the heater thermocouple 3 and controlling the heater drive unit 6 are omitted here.

[0160] like Figure 8 As shown, during the measurement phase, the temperature control unit 300 functions as a temperature data acquisition unit 801, a serial number transmission unit 802, a correction table receiving unit 803, and a correction unit 804.

[0161] When the radiation temperature measuring device 130_1 is installed on the substrate processing device 120_2, the temperature data acquisition unit 801 acquires temperature data through the radiation temperature measuring device 130_1 and notifies the correction unit 804 of it.

[0162] The serial number transmitting unit 802 is an example of a transmitting unit. When the radiation temperature measuring device 130_1 is installed on the substrate processing device 120_2, it obtains the serial number that identifies the radiation temperature measuring device 130_1 from the radiation temperature measuring device 130_1. The serial number transmitting unit 802 requests a correction table for the radiation temperature measuring device 130_1 from the management device 110 by sending a request (transmission request) containing a correction table of the obtained serial number to the management device 110.

[0163] When the correction table receiving unit 803 receives the correction table from the management device 110 in response to the serial number sending unit 802 sending a correction table request, it saves the received correction table in the correction table storage unit 810 (an example of a storage unit).

[0164] The correction unit 804 reads the correction table stored in the correction table storage unit 810 and corrects the temperature data notified by the temperature data acquisition unit 801. Specifically, for the temperature data notified by the temperature data acquisition unit 801, the correction unit 804 determines the temperature range and region, and corrects the temperature data using the correction values ​​(differences) of the determined temperature range and region contained in the instrument error data.

[0165] Therefore, the heater drive unit 6 can perform temperature control of the wafer based on the corrected temperature data, which has been corrected for the instrument errors of the radiation temperature measuring device 130_1 and the reference radiation temperature measuring device 130_0.

[0166] (2) Correction Table

[0167] Next, the correction table stored in the correction table storage unit 810 by the temperature control unit 300 during the measurement phase will be explained. As described above, when the radiation temperature measuring instrument 130_1 is mounted on the substrate processing apparatus 120_2, a correction table for the radiation temperature measuring instrument 130_1 is stored in the correction table storage unit 810. Furthermore, details of the correction table for the radiation temperature measuring instrument 130_1 are provided, for example, as follows: Figure 6B As shown in the revised table 620, the explanation is omitted here.

[0168] <Process flow of the substrate processing device during the measurement stage>

[0169] Next, the measurement processing flow of the substrate processing device 120_2 executed in the measurement phase will be explained. Figure 9 This is an example of a flowchart illustrating the measurement processing flow of a substrate processing device performed during the measurement phase.

[0170] In step S901, the operator installs the radiation temperature measuring device 130_1 onto the substrate processing device 120_2 for film formation.

[0171] In step S902, the substrate processing device 120_2 obtains the serial number of the radiation temperature measuring device 130_1 and sends a request (send request) to the management device 110 containing a correction table of the obtained serial number.

[0172] In step S903, the substrate processing device 120_2 receives and saves the correction table for the radiation temperature measuring device 130_1 sent from the management device 110 in response to the sending of a correction table request.

[0173] In step S904, the substrate processing apparatus 120_2 begins the film formation process. Consequently, the radiation temperature measuring device 130_1 begins temperature measurement of the wafer.

[0174] In step S905, the substrate processing device 120_2 acquires the temperature data measured by the radiation temperature measuring device 130_1 and corrects the acquired temperature data using a correction table.

[0175] In step S906, the substrate processing apparatus 120_2 performs temperature control of the wafer using the corrected temperature data.

[0176] In step S907, the substrate processing device 120_2 determines whether to continue the temperature measurement of the wafer. If it determines that the temperature measurement of the wafer should continue (yes in step S907), it returns to step S905.

[0177] On the other hand, in step S907, if it is determined that the temperature measurement of the wafer will not continue (NO in step S907), the substrate processing apparatus 120_2 ends the measurement process.

[0178] <Hardware Structure of the Management Device>

[0179] Next, the hardware structure of the management device 110 will be described. Figure 10 This is a diagram illustrating an example of the hardware structure of a management device. For example... Figure 10 As shown, the management device 110 includes a processor 1001, a memory 1002, an auxiliary storage device 1003, a connection device 1004, a communication device 1005, and a drive device 1006. Furthermore, the various hardware components included in the management device 110 are interconnected via a bus 1007.

[0180] The processor 1001 has various computing devices such as a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). The processor 1001 reads various programs (such as management programs) into the memory 1002 and executes them.

[0181] The memory 1002 includes main storage devices such as ROM (Read Only Memory) and RAM (Random Access Memory). The processor 1001 and the memory 1002 together form a computer, which performs various functions by executing various programs read from the memory 1002.

[0182] The auxiliary storage device 1003 stores various programs and various information used by the processor 1001 when the programs are executed.

[0183] The connector 1004 is a connector that connects to external devices (operating device 1011, display device 1012, etc.).

[0184] The communication device 1005 is a communication device used to send and receive various information between the substrate processing devices 120_1 to 120_N and the management device 110.

[0185] The drive device 1006 is a means for setting the recording medium 1013. The recording medium 1013 mentioned here includes media that record information optically, electrically, or magnetically, such as CD-ROMs, floppy disks, and optical discs. Alternatively, the recording medium 1013 may also include semiconductor memories that record information electrically, such as ROMs or flash memory.

[0186] Furthermore, various programs installed in the auxiliary storage device 1003 can be installed, for example, by placing the allocated recording medium 1013 on the drive device 1006 and reading the various programs recorded on the recording medium 1013. Alternatively, various programs installed in the auxiliary storage device 1003 can also be downloaded from the network 140 via the communication device 1005.

[0187] <Functional Structure of the Management Device>

[0188] Next, the functional structure of the management device 110 will be explained. Figure 11 This diagram illustrates an example of the functional structure of a management device. As described above, the management device 110 is equipped with a management program, and by executing this program, the management device 110 functions as a registration unit 1101, a sending unit 1102, and a display unit 1103.

[0189] During the preparation phase, the registration unit 1101 receives reference radiation temperature data sent from the substrate processing apparatus 120_1. Additionally, the registration unit 1101 receives correction tables from the substrate processing apparatus 120_1 for use by the radiation temperature measuring instruments 130_1 to 130_M. During the registration phase, the registration unit 1101 registers the reference radiation temperature data and each correction table in the correction table registration unit 1110.

[0190] During the measurement phase, the transmitting unit 1102 receives a transmission request for a correction table from any one of the substrate processing devices 120_2 to 120_N. The transmitting unit 1102 reads the correction table corresponding to the serial number included in the correction table transmission request from the correction table registration unit 1110. The transmitting unit 1102 then transmits the read correction table to the requesting substrate processing device.

[0191] Display unit 1103 displays the reference radiation temperature data and various correction tables registered in correction table registration unit 1110.

[0192] <Process flow of management devices during the registration and measurement phases>

[0193] Next, the process of management processing performed by the management device 110 in each stage from the registration stage to the measurement stage will be described. Figure 12 It is a flowchart representing the management process performed by the management device.

[0194] In step S1201, the management device 110 determines whether a correction table or reference radiation temperature data has been sent from the substrate processing device 120_1. If it is determined in step S1201 that no correction table or reference radiation temperature data has been sent (NO in step S1201), the process proceeds to step S1203.

[0195] On the other hand, if it is determined in step S1201 that a correction table or reference radiation temperature data has been sent (YES in step S1201), then proceed to step S1202.

[0196] In step S1202, the management device 110 registers the correction table or reference radiation temperature data sent from the substrate processing device 120_1.

[0197] In step S1203, the management device 110 determines whether a request for a correction table has been sent from any of the substrate processing devices 120_2 to 120_N (sending request). If it is determined in step S1203 that no correction table request has been sent (NO in step S1203), the process proceeds to step S1207.

[0198] On the other hand, if it is determined in step S1203 that a correction table request has been sent (YES in step S1203), then proceed to step S1204.

[0199] In step S1204, the management device 110 reads the correction table corresponding to the serial number contained in the correction table request.

[0200] In step S1205, the management device 110 determines the substrate processing device of the requester of the correction table.

[0201] In step S1206, the management device 110 sends the read correction table to the determined substrate processing device.

[0202] In step S1207, the management device 110 determines whether to continue the management process. If it is determined in step S1207 that the management process should continue (YES in step S1207), the process returns to step S1201. On the other hand, if it is determined in step S1207 that the management process should not continue (NO in step S1207), the management process ends.

[0203] <Specific examples of processing performed by the display section of the management device>

[0204] Next, a specific example of the processing performed by the display unit 1103 of the management device 110 will be described. As described above, the display unit 1103 displays the reference radiation temperature data and various correction tables registered in the correction table registration unit 1110. Figure 13 This diagram illustrates a specific example of the processing performed by the display unit of the management device.

[0205] exist Figure 13 In this example, screen 1300 is a screen displayed on display device 1012 by the operation of display unit 1103 of management device 110. For example... Figure 13 As shown, the screen 1300 displayed on the display device 1012 by the operation of the display unit 1103 includes:

[0206] • Button 1310 that indicates the display of reference radiation temperature data

[0207] • Button 1320 indicates the display of the correction table.

[0208] • Area 1330 displays attribute information of the reference radiation temperature data or the attribute information of the correction table.

[0209] • Area 1340 displays reference radiation temperature data or instrument error data included in the correction table.

[0210] When button 1310 is pressed, attribute information of the reference radiation temperature data is displayed in area 1330, and temperature data of various temperature ranges and regions of the wafer included in the reference radiation temperature data are displayed in area 1340. Specifically, area 1330 displays:

[0211] • Serial number of reference radiation temperature measuring instrument 130_0

[0212] • The date on which the reference radiation temperature data was measured

[0213] • The type of processing container 11 (chamber) of the substrate processing device 120_1, which is equipped with a reference radiation temperature measuring device 130_0 when generating correction tables, etc.

[0214] Additionally, temperature data for each temperature range and each region of the wafer, measured by the reference radiation temperature measuring device 130_0, are displayed in region 1340.

[0215] When button 1320 is pressed, the attribute information of the correction table is displayed in area 1330, and the instrument error data of the correction table is displayed in area 1340. Specifically, area 1330 displays:

[0216] • The serial number of the radiation temperature measuring instrument used to generate the correction table,

[0217] • Date of generating the correction table

[0218] • The type of processing container 11 (chamber) of the substrate processing device 120_1 equipped with a radiation temperature measuring device when generating correction tables, etc.

[0219] Additionally, area 1340 displays the correction values ​​(differences) for each temperature range and each region of the wafer included in the instrument error data of the correction table used for the radiation temperature measuring instrument.

[0220] In addition, Figure 13 In the example, when displaying the instrument error data of the correction table used for the radiation temperature measuring instrument in area 1340, the reference temperature data for each temperature range is also displayed.

[0221] <Overall Processing Flow of the Management System>

[0222] Next, the overall process flow of the management system 100 from the preparation stage to the measurement stage will be explained. Figure 14 This is a sequence diagram representing an example of the overall processing of the management system. Furthermore, in Figure 14 In the example, the management system 100, which includes 4 substrate processing devices, uses 1 reference radiation temperature measuring instrument 130_0 and 3 radiation temperature measuring instruments 130_1 to 130_3 (measuring instrument names: measuring instruments A, B, and C) to carry out processing from the preparation stage to the measurement stage, will be used as an example for explanation.

[0223] In step S1301, the substrate processing apparatus 120_1 performs preparation processing using the reference radiation temperature measuring device 130_0 and the radiation temperature measuring device 130_1 (measuring device A). Figure 7 Therefore, the substrate processing device 120_1 sends the reference radiation temperature data and the correction table (here referred to as correction table A) used by the radiation temperature measuring device 130_1 to the management device 110.

[0224] In step S1310, which is executed in parallel with step S1301, the management device 110 performs management processing ( Figure 12), and the correction table A used for the reference radiation temperature data and radiation temperature measuring instrument 130_1.

[0225] In step S1302, the substrate processing apparatus 120_2 uses the radiation temperature measuring instrument 130_1 (measuring instrument A) to perform measurement processing. Figure 9 Therefore, the substrate processing apparatus 120_2 sends a request for a correction table to the management device 110 and receives correction table A for the radiation temperature measuring device 130_1 from the management device 110. Furthermore, the substrate processing apparatus 120_2 performs temperature control of the wafer using the corrected temperature data based on the received correction table A.

[0226] In step S1310, which is executed in parallel with step S1302, the management device 110 performs management processing ( Figure 12 According to the correction table request, the correction table A for the radiation temperature measuring device 130_1 is sent to the substrate processing device 120_2.

[0227] In step S1303, the substrate processing apparatus 120_1 performs preparatory processing using the radiation temperature measuring device 130_2 (measuring device B). Figure 7 ), and sends the correction table (referred to here as correction table B) for the radiation temperature measuring instrument 130_2 to the management device 110.

[0228] In step S1310, which is executed in parallel with step S1303, the management device 110 performs management processing ( Figure 12 Correction table B is used for registering radiation temperature measuring instrument 130_2.

[0229] In step S1304, the substrate processing apparatus 120_3 uses the radiation temperature measuring instrument 130_2 (measuring instrument B) to perform measurement processing. Figure 9 Therefore, the substrate processing apparatus 120_3 sends a request to the management device 110 to send a correction table, and receives correction table B for the radiation temperature measuring device 130_2 from the management device 110. Furthermore, the substrate processing apparatus 120_3 performs temperature control of the wafer using the corrected temperature data based on the received correction table B.

[0230] In step S1310, which is executed in parallel with step S1304, the management device 110 performs management processing ( Figure 12 According to the request to send the correction table, the correction table B used by the radiation temperature measuring device 130_2 is sent to the substrate processing device 120_3.

[0231] In step S1305, the substrate processing apparatus 120_1 performs preparatory processing using a radiation temperature measuring device 130_3 (measuring device C). Figure 7), and sends the correction table (here referred to as correction table C) for the radiation temperature measuring instrument 130_3 to the management device 110.

[0232] In step S1310, which is executed in parallel with step S1305, the management device 110 performs management processing ( Figure 12 ), Correction table C for the 130_3 radiation temperature measuring instrument.

[0233] In step S1306, the substrate processing apparatus 120_4 uses the radiation temperature measuring instrument 130_3 (measuring instrument C) to perform measurement processing. Figure 9 Therefore, the substrate processing apparatus 120_4 sends a request to the management device 110 to send a correction table, and receives the correction table C for the radiation temperature measuring device 130_3 from the management device 110. Furthermore, the substrate processing apparatus 120_4 uses the corrected temperature data based on the received correction table C to perform temperature control of the wafer.

[0234] In step S1310, which is executed in parallel with step S1306, the management device 110 performs management processing ( Figure 12 In response to the request to send the correction table, the correction table C for the radiation temperature measuring device 130_3 is sent to the substrate processing device 120_4.

[0235] <Summary>

[0236] As can be seen from the above description, the management device 110 of the first embodiment performs the following processing.

[0237] • Obtain the correction table, in which the instrument error data of each radiation temperature measuring instrument relative to the reference radiation temperature measuring instrument are associated (corresponding) with the serial number of each radiation temperature measuring instrument.

[0238] When a correction table sending request containing the serial number of a specific radiation temperature measuring device is received from a substrate processing device equipped with such a device, the correction table corresponding to the serial number of the specific radiation temperature measuring device is sent to the requesting substrate processing device.

[0239] In this way, the management device 110 of the first embodiment associates the instrument error data of the radiation temperature measuring device with the serial number and registers it as a correction table. Therefore, in the management device 110 of the first embodiment, an appropriate correction table can be set for the substrate processing apparatus on which the radiation temperature measuring device is installed.

[0240] In addition, the substrate processing apparatus 120_1 of the first embodiment performs the following processing.

[0241] • Acquire reference radiation temperature data by mounting the reference radiation temperature meter among multiple radiation temperature meters on a substrate processing device.

[0242] • Acquire radiation temperature data by mounting radiation temperature measuring instruments (excluding the reference radiation temperature measuring instrument) on a substrate processing device.

[0243] • Instrument error data is obtained by calculating the difference between the reference radiation temperature data and the radiation temperature data.

[0244] • Generate a correction table containing the obtained instrument error data and the serial number of the radiation temperature measuring instrument, and send it to the management device that manages the correction tables for the radiation temperature measuring instrument.

[0245] Thus, the substrate processing apparatus 120_1 of the first embodiment generates a correction table containing instrument error data and serial number of the radiation temperature measuring device, and sends it to the management device. Therefore, according to the substrate processing apparatus 120_1 of the first embodiment, the management device can manage the instrument error data of the radiation temperature measuring device and set appropriate correction tables for substrate processing apparatuses equipped with radiation temperature measuring devices.

[0246] In addition, the substrate processing apparatus 120_2 of the first embodiment performs the following processing.

[0247] • If a radiation temperature measuring device is installed, obtain the serial number of the radiation temperature measuring device.

[0248] • Send a correction table transmission request containing the obtained serial number to the management device.

[0249] • Save the correction table for the radiation temperature measuring instrument received from the management device in response to a correction table sending request.

[0250] • Correct the temperature data measured by the installed radiation temperature measuring instrument using a correction table for the radiation temperature measuring instrument.

[0251] Thus, the substrate processing apparatus 120_2 of the first embodiment obtains a correction table corresponding to the installed radiation temperature measuring device from the management device. Therefore, according to the substrate processing apparatus 120_2 of the first embodiment, an appropriate correction table corresponding to the installed radiation temperature measuring device can be set.

[0252] That is, according to the first embodiment, when the temperature control of the wafer is performed by installing the radiation temperature measuring device on the substrate processing apparatus, it is possible to avoid setting incorrect correction values.

[0253] [Second Implementation]

[0254] In the first embodiment described above, a serial number was used as information for identifying the radiation temperature measuring device. However, the information used to identify the radiation temperature measuring device can be any information that can identify the individual radiation temperature measuring device, and can be information other than the serial number.

[0255] Furthermore, in the first embodiment described above, the substrate processing apparatus 120_1 was used when generating the correction table. However, substrate processing apparatuses 120_2 to 120_N other than substrate processing apparatus 120_1 may also be used to generate the correction table.

[0256] Furthermore, in the first embodiment described above, the substrate processing apparatus 120_1 is used only in the preparation stage. However, the substrate processing apparatus 120_1 can also be used in the measurement stage.

[0257] Furthermore, in the first embodiment described above, the case where the radiation temperature measuring device 130_1, for which a correction table was generated during the preparation stage, was installed on the substrate processing apparatus 120_2 during the measurement stage was explained. However, the substrate processing apparatus on which the radiation temperature measuring device 130_1, for which a correction table was generated during the preparation stage, was installed during the measurement stage is not limited to the substrate processing apparatus 120_2, and may be installed on any other substrate processing apparatus.

[0258] Furthermore, in the first embodiment described above, the reference radiation temperature measuring device 130_0 is only used in the preparation stage, and there is no example of using the reference radiation temperature measuring device 130_0 in the measurement stage. However, the reference radiation temperature measuring device 130_0 can also be used in the measurement stage in the same way as the radiation temperature measuring devices 130_1 to 130_M.

[0259] Furthermore, the present invention is not limited to the structures listed in the above embodiments, or combinations of other elements, as shown herein. Modifications can be made in these aspects without departing from the spirit of the invention, and can be appropriately determined depending on the application.

Claims

1. A management device, characterized in that, have: The registration department of the registration correction table associates the instrument error data of each radiation temperature measuring instrument with the information used to identify each radiation temperature measuring instrument. and The transmitting unit, upon receiving a transmission request from a substrate processing device equipped with a specific radiation temperature measuring device, which contains a correction table containing information for identifying the specific radiation temperature measuring device, transmits the correction table corresponding to the information for identifying the specific radiation temperature measuring device to the requesting substrate processing device.

2. The management device according to claim 1, characterized in that: The instrument error data of each radiation temperature measuring instrument relative to the reference radiation temperature measuring instrument is obtained by calculating the difference between: the reference radiation temperature data measured by mounting the reference radiation temperature measuring instrument on the substrate processing device; and the radiation temperature data measured by mounting the specific radiation temperature measuring instrument on the substrate processing device.

3. The management device according to claim 2, characterized in that: The instrument error data of each radiation temperature measuring device includes the difference between the reference radiation temperature data and each radiation temperature data for each temperature range and each region of the wafer.

4. The management device according to claim 3, characterized in that: It also has a display unit that displays the reference radiation temperature data and the correction table.

5. A substrate processing apparatus, characterized in that, have: The acquisition unit acquires instrument error data by calculating the difference between the following two: reference radiation temperature data measured by mounting a reference radiation temperature measuring device among a plurality of radiation temperature measuring devices on a substrate processing device, and radiation temperature data measured by mounting a radiation temperature measuring device other than the reference radiation temperature measuring device among the plurality of radiation temperature measuring devices on the substrate processing device. and The sending unit sends the correction table to the management device for managing correction tables used by the radiation temperature measuring instrument. The correction table contains the obtained instrument error data and information for identifying radiation temperature measuring instruments other than the reference radiation temperature measuring instrument.

6. A substrate processing apparatus, characterized in that, have: The transmitting unit, when a radiation temperature measuring device is installed, acquires information for identifying the radiation temperature measuring device and sends a transmission request for a correction table containing the acquired information to a management device that manages a correction table for the radiation temperature measuring device. The storage unit stores the correction table for the installed radiation temperature measuring instrument, which is received from the management device in response to the sending of the correction table sending request. and The correction unit uses the stored correction table to correct the temperature data measured by the installed radiation temperature measuring instrument.

7. The substrate processing apparatus according to claim 6, characterized in that: The correction table contains correction values ​​for the temperature data of each temperature range and each region of the wafer.

8. The substrate processing apparatus according to claim 7, characterized in that: The correction unit determines the temperature range and the region of the wafer based on the temperature data measured by the installed radiation temperature measuring device, and corrects the temperature range and the region of the wafer using the correction values ​​determined by the determination.

9. A computer program product, characterized in that: The computer program product includes a management program that, when executed by a processor, performs the following steps: The step of registering a correction table, which associates the instrument error data of each radiation temperature measuring instrument with the information used to identify each radiation temperature measuring instrument, respectively. and In the transmission step, if a transmission request is received from a substrate processing device equipped with a specific radiation temperature measuring device, containing a correction table containing information for identifying the specific radiation temperature measuring device, the correction table corresponding to the information for identifying the specific radiation temperature measuring device is transmitted to the requesting substrate processing device.

10. A computer program product, characterized in that: The computer program product includes a temperature control program that, when executed by a processor, performs the following steps: The acquisition step involves obtaining instrument error data by calculating the difference between the following two: reference radiation temperature data measured by mounting a reference radiation temperature measuring device among a plurality of radiation temperature measuring devices on the substrate processing device, and radiation temperature data measured by mounting radiation temperature measuring devices other than the reference radiation temperature measuring device among the plurality of radiation temperature measuring devices on the substrate processing device. and The sending step involves sending a correction table to a management device for managing correction tables used by radiation temperature measuring instruments. This correction table contains the obtained instrument error data and information for identifying radiation temperature measuring instruments other than the reference radiation temperature measuring instrument.

11. A computer program product, characterized in that: The computer program product includes a temperature control program that, when executed by a processor, performs the following steps: In the sending step, if a radiation temperature measuring device is installed, information for identifying the radiation temperature measuring device is obtained, and a sending request for a correction table containing the obtained information is sent to a management device for managing a correction table for the radiation temperature measuring device. The saving step saves the correction table for the installed radiation temperature measuring instrument received from the management device in response to the sending request of the correction table. and The correction step involves using the saved correction table to correct the temperature data measured by the installed radiation temperature measuring instrument.

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