Anti-reduction microwave temperature-stable ceramic capacitor, ceramic dielectric material for same, and preparation method of anti-reduction microwave temperature-stable ceramic capacitor

By using a combination of BaxSr1-xMo1-yWyO4 substrate and other components in microwave ceramic capacitors, the reduction problem caused by nickel electrodes was solved, enabling the fabrication of low-cost, high-performance microwave ceramic capacitors suitable for the miniaturization of microwave devices.

CN122079628APending Publication Date: 2026-05-26FUJIAN TORCH ELECTRON TECH CO LTD
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Patent Information

Application Number
CN202610269364.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-03-06
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

When existing microwave ceramic capacitors are sintered in a reducing atmosphere, the nickel electrode causes the ceramic dielectric to become semiconductor, which deteriorates the insulation performance and makes them unusable. In addition, the existing materials are expensive.

Method used

Using BaxSr1-xMo1-yWyO4 as the base material, and adding CaRe4(MoO4)6, BiYMoO6, MgAl2O4, ZrSiO4, and Na2B2O7, it was synthesized by solid-state method and sintered in N2/H2 reducing atmosphere. Nickel was used as the internal electrode to reduce the sintering temperature and improve the reduction resistance.

Benefits of technology

This study demonstrates the fabrication of microwave ceramic capacitors with high Q value, low loss, and temperature stability using nickel electrodes, which is suitable for the miniaturization requirements of microwave devices and reduces production costs.

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Abstract

The invention relates to an anti-reduction microwave temperature-stable ceramic capacitor and a ceramic dielectric material and a preparation method thereof, the ceramic dielectric material takes 100 parts by mole of BaxSr1-xMo1-yWyO4 as a base material, and the following components are added in parts by mole: 4-8 parts of CaRe4 (MoO4) 6, 2-5 parts of BiYMoO6, 0.5-1.0 part of MgAlO, 0.2-0.8 part of ZrSiO and 1-3 parts of Na2B2O7, x is more than 0 and less than 0.15, y is more than 0 and less than 0.10, and Re is La, Nd and Ce; baxSr1-xMo1-yWyO4 is used as a base material, then CaRe4 (MoO4) 6 and BiYMoO6 synthesized by a solid phase method are added, the dielectric constant of the dielectric material is improved, the capacitance temperature coefficient of the dielectric material is adjusted, spinel MgAl2O4 and zirconite ZrSiO4 are adopted to improve the reduction resistance of the dielectric material in N2 / H2 atmosphere, borax Na2B2O7 is matched to reduce the densification temperature of the dielectric material, and the dielectric constant epsilon rgt of the prepared ceramic dielectric is improved; the densification temperature ranges from 1150 DEG C to 1250 DEG C, and the ceramic capacitor is suitable for being used as an anti-reduction microwave temperature-stable ceramic capacitor with nickel as an inner electrode.
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