Manufacturing methods of electronic components, electronic components and thin-film resistors

Abstract

This invention discloses a method for manufacturing an electronic component, the electronic component itself, and a thin-film resistor. The method for manufacturing the electronic component includes: forming a through-hole in a ceramic substrate; forming a resistive film on one side of the ceramic substrate; forming a metal layer on both sides of the ceramic substrate, the metal layer covering a portion of the resistive film, and a portion of the metal layer located within the through-hole; forming a conductive structure on one side of the metal layer, a portion of the conductive structure forming a first electrode, a second electrode, and a circuit structure on one side of the ceramic substrate; forming a third electrode on the other side of the conductive structure, the third electrode being electrically connected to the first electrode, the second electrode, or the circuit structure; forming an insulating protective layer on one side of the resistive film to cover the portion of the resistive film not covered by the metal layer; and forming an auxiliary welding structure on one side of the second electrode.

Description

Technical Field

[0001] This invention relates to a method for manufacturing an electronic component, an electronic component, and a thin-film resistor, particularly a method for manufacturing an electronic component having a resistive film and an electronic component having a resistive film. Background Technology

[0002] In the existing technology, the thin-film resistors in electronic components are mostly directly exposed, which makes them prone to failure due to various environmental factors. Summary of the Invention

[0003] This invention discloses a method for manufacturing an electronic component, the electronic component, and a thin-film resistor, mainly to improve the problem in the prior art where the thin-film resistor contained in electronic components is prone to failure due to various environmental factors.

[0004] One embodiment of the present invention discloses a method for manufacturing an electronic component, comprising: a via forming step: forming at least one via through a ceramic substrate, the via penetrating the ceramic substrate; a resistive film forming step: forming a resistive film on one side of the ceramic substrate; a metal layer forming step: forming a metal layer on both sides of the ceramic substrate, wherein a portion of the metal layer covers a portion of the resistive film, and a portion of the metal layer is formed on the inner wall of the via; a conductive structure forming step: forming a conductive structure on one side of the metal layer; a portion of the conductive structure on one side of the ceramic substrate constitutes a first electrode, a second electrode, and at least one circuit structure; a portion of the conductive structure on the other side of the ceramic substrate forms a third electrode; the third electrode is electrically connected to the first electrode, the second electrode, or the circuit structure through a conductive material located in the via; an insulating protective layer forming step: forming an insulating protective layer on one side of the resistive film to cover the portion of the resistive film not covered by the metal layer; and an auxiliary welding structure forming step: forming an auxiliary welding structure on one side of the second electrode, the auxiliary welding structure being used to provide a chip mounting.

[0005] Optionally, in the metal layer formation step, in the cross section containing the ceramic substrate, the resistive film and the metal layer, at least 10 micrometers at both ends of the resistive film are covered by the metal layer.

[0006] Optionally, the thickness of the insulating protective layer is less than 10 micrometers; the material of the insulating protective layer is polyamic acid polymer (PAA), polyimide (PI), polyamide (PA), polybenzoxazole (PBO), benzocyclobutene (BCB), epoxy resin, or SU-8 photoresist.

[0007] Optionally, the resistive film is TaN, Ta2N or TaxNx; the thickness of the resistive film is between 10 and 800 nanometers (nm).

[0008] Optionally, the auxiliary welding structure is a gold-tin alloy (AuSn), and the thickness of the auxiliary welding structure is between 2 and 6 micrometers (μm); the weight percentage of gold in the auxiliary welding structure is 65% to 80%.

[0009] Optionally, an annealing step is included between the conductive structure forming step and the insulating protective layer forming step: the article formed after the conductive structure forming step is placed in an oxygen-free environment with a temperature between 200 and 400 degrees Celsius for baking.

[0010] Optionally, between the annealing step and the insulating protective layer formation step, a laser step is further included: using a laser to trim the resistive film to adjust a resistance value of the resistive film to a preset resistance range.

[0011] One embodiment of the present invention discloses an electronic component comprising: a ceramic substrate having a plurality of vias penetrating the ceramic substrate; a resistive film formed on one side of the ceramic substrate; a metal layer formed on both sides of the ceramic substrate, wherein a portion of the metal layer covers a portion of the resistive film, and a portion of the metal layer is formed on the inner wall of the vias; a conductive material filling the vias; a first electrode formed on one side of the partial metal layer; a second electrode formed on one side of the partial metal layer; a circuit structure formed on one side of the partial metal layer; a third electrode formed on the other side of the partial metal layer, the third electrode being electrically connected to the first electrode, the second electrode, or the third electrode via the conductive material; an insulating protective layer formed on one side of the resistive film, the insulating protective layer covering the portion of the resistive film not covered by the metal layer; and an auxiliary soldering structure formed on one side of the second electrode, the auxiliary soldering structure being used to provide a chip mounting.

[0012] Optionally, in a cross-section comprising a ceramic substrate, a resistive film, and a metal layer, at least 10 micrometers at both ends of the resistive film are covered by the metal layer.

[0013] Optionally, the thickness of the insulating protective layer is less than 10 micrometers; the material of the insulating protective layer is polyamic acid polymer (PAA), polyimide (PI), polyamide (PA), polybenzoxazole (PBO), benzocyclobutene (BCB), epoxy resin, or SU-8 photoresist.

[0014] Optionally, the resistive film is TaN, Ta2N or TaxNx; the thickness of the resistive film is between 10 and 800 nanometers (nm).

[0015] Optionally, the auxiliary welding structure is a gold-tin alloy (AuSn), and the thickness of the auxiliary welding structure is between 2 and 6 micrometers (μm); the weight percentage of gold in the auxiliary welding structure is 65% to 80%.

[0016] Optionally, the materials constituting the first electrode, the second electrode, and the third electrode are different from conductive materials; the first electrode, the second electrode, and the third electrode are made of titanium, platinum, or gold.

[0017] One embodiment of the present invention discloses an electronic component comprising: a first ceramic substrate having a plurality of first vias, each first via penetrating the first ceramic substrate; a second ceramic substrate having a plurality of second vias, each second via penetrating the second ceramic substrate; a third electrode formed on one side of the second ceramic substrate; a connection structure connecting the first ceramic substrate to the second ceramic substrate; the connection structure, conductive materials in the first vias, and conductive materials in the second vias being electrically connected to each other; a resistive film formed on one side of the first ceramic substrate; and a conductive structure forming the first electrode. A ceramic substrate has a portion of its conductive structure forming a first electrode, a portion of its conductive structure forming a second electrode, and a portion of its conductive structure forming at least one circuit structure; the portion of the conductive structure covers a portion of a resistive film; a third electrode is electrically connected to the first electrode, the second electrode, or the circuit structure through a connection structure, conductive material in a first via, and conductive material in a second via; an insulating protective layer is formed on one side of the resistive film, covering the portion of the resistive film not covered by the conductive structure; and an auxiliary welding structure is formed on one side of the second electrode, the auxiliary welding structure being used to provide a chip mounting.

[0018] One embodiment of the present invention discloses a thin-film resistor, comprising: a ceramic substrate having a plurality of vias penetrating the ceramic substrate; a resistive film formed on one side of the ceramic substrate; a metal layer formed on both sides of the ceramic substrate, wherein a portion of the metal layer covers a portion of the resistive film, and a portion of the metal layer is formed on the inner wall of the vias; a conductive material filling the vias; a first electrode formed on one side of the partial metal layer; a second electrode formed on one side of the partial metal layer; a circuit structure formed on one side of the partial metal layer; a third electrode formed on the other side of the partial metal layer, the third electrode being electrically connected to the first electrode, the second electrode, or the circuit structure through the conductive material; and an insulating protective layer formed on one side of the resistive film, the insulating protective layer covering the portion of the resistive film not covered by the metal layer.

[0019] Optionally, in a cross-section comprising a ceramic substrate, a resistive film, and a metal layer, at least 10 micrometers at both ends of the resistive film are covered by the metal layer.

[0020] Optionally, the thickness of the insulating protective layer is less than 10 micrometers; the material of the insulating protective layer is polyamic acid polymer (PAA), polyimide (PI), polyamide (PA), polybenzoxazole (PBO), benzocyclobutene (BCB), epoxy resin, or SU-8 photoresist.

[0021] Optionally, the resistive film is TaN, Ta2N or TaxNx; the thickness of the resistive film is between 10 and 800 nanometers (nm).

[0022] Optionally, the materials constituting the first electrode, the second electrode, and the third electrode are different from conductive materials; the first electrode, the second electrode, and the third electrode are made of titanium, platinum, or gold.

[0023] In summary, the manufacturing method of the electronic component, the electronic component, and the thin-film resistor of the present invention can effectively reduce the probability of resistor film failure through the design of the insulating protective layer. Furthermore, the design of the insulating protective layer can also reduce the problem of short circuits caused by accidental contact between the resistor film and other conductors.

[0024] To further understand the features and technical content of this invention, please refer to the following detailed description and accompanying drawings. However, these descriptions and drawings are only for illustrating the invention and are not intended to limit the scope of protection of the invention in any way. Attached Figure Description

[0025] Figure 1 This is a flowchart of a first embodiment of the method for manufacturing electronic components according to the present invention.

[0026] Figure 2 This is a cross-sectional schematic diagram of the product after the metal layer formation step in the manufacturing method of the electronic component of the present invention.

[0027] Figure 3 This is a cross-sectional schematic diagram of the product after the conductive structure formation step in the manufacturing method of the electronic component of the present invention.

[0028] Figure 4 This is a cross-sectional schematic diagram of the product after the insulating protective layer formation step in the manufacturing method of the electronic component of the present invention; Figure 4 This is also a cross-sectional schematic diagram of the thin-film resistor of the present invention.

[0029] Figure 5 This is a cross-sectional schematic diagram of the product after the auxiliary welding structure formation step in the manufacturing method of the electronic component of the present invention. Figure 5 This is also a cross-sectional schematic diagram of the first embodiment of the electronic component of the present invention.

[0030] Figure 6 This is a cross-sectional schematic diagram of the electronic component of the present invention with a chip mounted on it.

[0031] Figure 7 This is a flowchart of a second embodiment of the method for manufacturing electronic components according to the present invention.

[0032] Figure 8 This is a cross-sectional schematic diagram of a second embodiment of the electronic component of the present invention.

[0033] Figure 9 This is a cross-sectional schematic diagram of a third embodiment of the electronic component of the present invention. Detailed Implementation

[0034] In the following description, if a specific drawing is indicated or shown in a specific drawing, it is only to emphasize that most of the relevant content mentioned in the following description appears in that specific drawing, but does not limit the following description to refer only to that specific drawing.

[0035] Please refer to the following: Figures 1 to 5 , Figure 1 This is a flowchart of a first embodiment of the method for manufacturing electronic components according to the present invention. Figures 2-5 These are schematic cross-sectional views of the product after the metal layer formation step, the product after the conductive structure formation step, the product after the insulating protective layer formation step, and the product after the auxiliary welding structure formation step, respectively, in the manufacturing method of the electronic component of the present invention.

[0036] The method for manufacturing the electronic component of the present invention includes the following steps:

[0037] Step S1: At least one via 11 is formed on a ceramic substrate 1, and the via 11 penetrates the ceramic substrate 1.

[0038] A resistive film forming step S2: A resistive film 2 is formed on one side of the ceramic substrate 1;

[0039] Step S3: A metal layer 3 is formed on both sides of the ceramic substrate 1, and part of the metal layer 3 covers part of the resistive film 2, and part of the metal layer 3 is formed on the inner wall of the via 11.

[0040] Step S4 of forming a conductive structure: A conductive structure 4 is formed on one side of the metal layer 3; a portion of the conductive structure 4 forms a first electrode 41, a second electrode 42 and at least one circuit structure 43 on one side of the ceramic substrate 1; a portion of the conductive structure 4 forms a third electrode 44 on the other side of the ceramic substrate 1; the third electrode 44 is electrically connected to the first electrode 41, the second electrode 42 or the circuit structure 43 through a conductive material 45 located in the through hole 11.

[0041] Step S5: An insulating protective layer 5 is formed on one side of the resistive film 2 to cover the portion of the resistive film 2 not covered by the metal layer 3.

[0042] Step S6: An auxiliary welding structure 6 is formed on one side of the second electrode 42. The auxiliary welding structure 6 is used to provide a chip mounting.

[0043] In practical applications, the ceramic substrate 1 is a polished ceramic substrate 1, and the roughness Ra of the ceramic substrate 1 can be less than 0.05 micrometers (μm). In one example, the main components of the ceramic substrate 1 can be 99.6% Al2O3, 96% Al2O3, aluminum nitride (AlN), or zirconia-reinforced alumina (ZTA), which can be selected according to actual needs and are not limited here.

[0044] like Figure 1 and Figure 2 As shown, in practice, in the via forming step S1, for example, a laser can be used to process the ceramic substrate 1 to form vias 11 penetrating the ceramic substrate 1. The diameter of each via 11 is not limited here; in practice, it can be designed based on the thickness of the ceramic substrate 1. For example, in an example where the thickness of the ceramic substrate 1 is between 5 and 40 mils, the diameter of each via 11 can be between 1 and 5 mils.

[0045] In the resistive film forming step S2, for example, photolithography can be used in conjunction with sputtering to form a resistive film 2 on one side of the ceramic substrate 1. The resistive film 2 can be, for example, TaN, Ta2N, or TaxNx. The thickness of the resistive film 2 can be between 10 and 800 nanometers (nm). During the sputtering process of forming the resistive film 2 on one side of the ceramic substrate 1, the flow rate of N2 can be adjusted to sputter TaN, Ta2N, or TaxNx. The specific pattern of the resistive film 2 can be designed according to actual needs and is not limited thereto.

[0046] In the metal layer formation step S3, for example, photolithography combined with sputtering can be used to form the metal layer 3 on the ceramic substrate 1. Furthermore, in the metal layer formation step S3, PTH (Plated Through Hole) technology can be used to form the metal layer 3 in the via 11. The metal layer 3 is made of materials such as titanium (Ti) or copper (Cu).

[0047] like Figure 2As shown, in the metal layer formation step S3, in the cross-section including the ceramic substrate 1, the resistive film 2, and the metal layer 3, at least 10 micrometers at both ends of the resistive film 2 are covered by the metal layer 3. This ensures the connection strength between the metal layer 3 and the first electrode 41 connected to it, and the resistive film 2. In actual manufacturing, the metal layer 3 may experience positional deviations during the forming process. Therefore, by designing the ratio of the first width D1 to the second width D2 as described above, it can be ensured that the metal layer 3 can correctly cover a portion of the resistive film 2.

[0048] In practical applications, in the conductive structure formation step S4, technologies such as DPC (Direct Plated Copper) and TFC (Thin Film Ceramic) can be used to form the conductive structure 4 on one side of the metal layer 3. In one embodiment, the conductive material 45 in the via 11 can be the same material as the conductive structure 4, but this is not a limitation. In practical applications, the first electrode 41 and the second electrode 42 can, for example, serve as the positive and negative electrodes, respectively. The design of the third electrode 44 allows relevant personnel or equipment to easily mount electronic components onto the circuit board. The specific positions and dimensions of the first electrode 41, the second electrode 42, the circuit structure 43, and the third electrode 44 can be designed according to actual needs.

[0049] In one variation, in the conductive structure forming step S4, a conductive material 45 may be formed first on the outside of the metal layer 3 located in the via 11, so that each via 11 is filled by the metal layer 3 and the conductive material 45, and then a conductive structure 4 may be formed on one side of a portion of the metal layer 3, wherein the conductive material 45 and the conductive structure 4 may be different metal materials.

[0050] like Figure 3 As shown in the cross-sectional view of the product after step S4 of forming the conductive structure, the resistive film 2, together with the surrounding conductive structure 4 (i.e., the first electrode 41 and the circuit structure 43) and the metal layer 3, will form a groove. Figure 4 As shown in the cross-sectional view of the article after step S5 of forming the insulating protective layer, the insulating protective layer 5 will fill part of the groove so that the resistive film 2 is not exposed. Of course, in one embodiment, the insulating protective layer 5 may completely fill the groove, or the insulating protective layer 5 may completely fill the groove and part of the insulating protective layer 5 protrudes from the groove, covering part of the first electrode 41 and part of the circuit structure 43.

[0051] like Figure 4As shown, in practical applications, in step S5 of forming the insulating protective layer, for example, photolithography can be used to form the insulating protective layer 5 on the resistive film 2. The thickness of the insulating protective layer 5 can be, for example, less than 10 micrometers. The material of the insulating protective layer 5 can be, for example, polyamic acid polymer (PAA), polyimide (PI), polyamide (PA), polybenzoxazole (PBO), benzocyclobutene (BCB), epoxy resin, or SU-8 photoresist. The insulating protective layer 5 completely covers the portion of the resistive film 2 not covered by the metal layer 3. This design can effectively protect the resistive film 2, thereby improving its resistance to moisture, chemicals, and temperature changes. Moreover, the insulating protective layer 5 can also prevent the resistive film 2 from accidentally contacting other conductors and causing a short circuit. In addition, the insulating protective layer 5 can also provide physical protection for the resistive film 2, thereby improving its resistance to vibration, bending, and external impact.

[0052] like Figure 5 As shown, in practical applications, in the auxiliary welding structure forming step S6, the auxiliary welding structure 6 can be formed on the second electrode 42 by means such as vapor deposition. The auxiliary welding structure 6 can be, for example, a gold-tin alloy (AuSn), and the thickness of the auxiliary welding structure 6 can be between 2 and 6 micrometers (μm), while the weight percentage of gold in the auxiliary welding structure 6 can be 65% to 80%.

[0053] Please refer to the following: Figure 1 , Figure 5 and Figure 6 , Figure 6 This is a cross-sectional schematic diagram of the electronic component of the present invention with a chip mounted on it. In one embodiment, after the auxiliary welding structure formation step S6, a chip mounting step may be included: mounting a chip 7 on the auxiliary welding structure 6 and connecting the chip 7 to the first electrode 41. For example, the chip 7 may be a light-emitting diode, a power chip, etc., and the type of chip 7 is not limited here.

[0054] Please refer to the following: Figure 4 and Figure 5 , Figure 4 This is a cross-sectional schematic diagram of the thin-film resistor of the present invention. Figure 5 This is a cross-sectional schematic diagram of a first embodiment of the electronic component of the present invention. The thin-film resistor 100 and the electronic component 200 of the present invention can be manufactured, for example, using the manufacturing method of the electronic component of the present invention described above, but are not limited thereto. Figure 4 As shown, the thin-film resistor 100 of this embodiment includes: a ceramic substrate 1, a resistive film 2, a metal layer 3, a first electrode 41, a second electrode 42, a circuit structure 43, a third electrode 44, a conductive material 45, and an insulating protective layer 5. Figure 5As shown, the electronic component 200 of this embodiment includes a ceramic substrate 1, a resistive film 2, a metal layer 3, a first electrode 41, a second electrode 42, a circuit structure 43, a third electrode 44, a conductive material 45, an insulating protective layer 5, and an auxiliary welding structure 6. For detailed descriptions of the thin-film resistor 100 and the various components included in the electronic component 200 of the present invention, please refer to the description of the foregoing embodiments, which will not be repeated here.

[0055] Please refer to the following: Figure 5 and Figure 7 , Figure 7 This is a flowchart of a second embodiment of the method for manufacturing an electronic component according to the present invention. The biggest difference between this embodiment and the previous embodiment is that the following steps are included between the conductive structure forming step S4 and the insulating protective layer forming step S5:

[0056] Annealing step SX: The product made after the conductive structure formation step S4 is placed in an oxygen-free environment with a temperature between 200 and 400 degrees Celsius (°C) for baking.

[0057] Laser step SY: Use a laser to trim the resistive film 2 to adjust its resistance value to a preset resistance range.

[0058] By designing the annealing step SX, the resistance value of the resistive film 2 can be stabilized, and the resistance range of the resistive film 2 can be reduced. For example, before the annealing step SX, the resistance value of the resistive film 2 is between 9 and 12 ohms. After the annealing step SX, the resistance value range of the resistive film 2 can be reduced to 8.4 to 8.5 ohms.

[0059] In the laser step SY, a UV laser or a green laser can be used to trim the resistive film 2 to adjust its resistance value. In practice, for example, the laser step SY can be used to control the accuracy of the resistance value of the resistive film 2 within ±1%.

[0060] It should be noted that the manufacturing method of the electronic component in the first embodiment may also be combined with only the annealing step SX to form another embodiment, or the manufacturing method of the electronic component in the first embodiment may also be combined with only the laser step SY to form another embodiment.

[0061] Please see Figure 8 This is a cross-sectional schematic diagram of a second embodiment of the electronic component of the present invention. The electronic component 300 of this embodiment includes a first ceramic substrate 1A, a second ceramic substrate 1B, a connection structure 1C, a resistive film 2, a conductive structure 4, an insulating protective layer 5, and an auxiliary welding structure 6.

[0062] The first ceramic substrate 1A has a plurality of first through holes 12, each of which penetrates the first ceramic substrate 1A. The second ceramic substrate 1B has a plurality of second through holes 13, each of which penetrates the second ceramic substrate 1B. The first ceramic substrate 1A is connected to the second ceramic substrate 1B via a connecting structure 1C. The connecting structure 1C may be, for example, a metallic coating such as silver paste, and can be selected according to actual needs without limitation. The connecting structure 1C, the conductive material 8 in the first through holes 12, and the conductive material 9 in the second through holes 13 are electrically connected. The connecting structure 1C, the conductive material 8, and the conductive material 9 may be the same material, or they may be different materials.

[0063] A resistive film 2 is formed on one side of a first ceramic substrate 1A. A portion of a conductive structure 4 is formed on one side of the first ceramic substrate 1A, and a portion of the conductive structure 4 constitutes a first electrode 41, while a portion of the conductive structure 4 constitutes a second electrode 42. A portion of the conductive structure 4 located on the first ceramic substrate 1A covers a portion of the resistive film 2. A third electrode 44 is provided on one side of the second ceramic substrate 1B. The third electrode 44 is electrically connected to the first electrode 41, the second electrode 42, or the circuit structure 43 through a connecting structure 1C, the conductive material 9 in the first through-hole 12, and the conductive material 8 in the second through-hole 13. For detailed descriptions of the resistive film 2, the insulating protective layer 5, and the auxiliary welding structure 6, please refer to the foregoing embodiments, which will not be repeated here. In practical applications, the conductive structure 4 and the third electrode 44 can be made of the same material, but this is not a limitation; in different examples, they can also be made of different materials.

[0064] Please see Figure 9 This is a cross-sectional schematic diagram of a third embodiment of the electronic component of the present invention. The electronic component 400 of this embodiment includes a ceramic substrate 1, a resistive film 2, a metal layer 3, a first electrode 41, a second electrode 42, a circuit structure 43, a third electrode 44, a conductive material 45, an insulating protective layer 5, and an auxiliary welding structure 6. This embodiment and... Figure 5 The difference in the electronic components shown is that the metal layer 3 is formed only in the via 11, and the metal layer 3 is not formed on both sides of the ceramic substrate 1. The resistive film 2 is partially covered by the circuit structure 43. For further descriptions of the ceramic substrate 1, resistive film 2, metal layer 3, first electrode 41, second electrode 42, circuit structure 43, third electrode 44, conductive material 45, insulating protective layer 5, and auxiliary welding structure 6, please refer to the foregoing embodiments, and they will not be repeated here.

[0065] In summary, the electronic components, thin-film resistors, and manufacturing methods of the present invention, by designing the resistive film to be covered by a metal layer or the resistive film to be covered by a circuit structure, combined with the design of forming an insulating protective layer on one side of the resistive film, can effectively improve the service life of the resistive film and thus effectively enhance its reliability.

[0066] The above description is only a preferred embodiment of the present invention and does not limit the patent scope of the present invention. Therefore, all equivalent technical changes made based on the description and drawings of the present invention are included within the protection scope of the present invention.

Claims

1. A method for manufacturing an electronic component, characterized in that, The method for manufacturing the electronic component includes: One via forming step: forming at least one via on a ceramic substrate, wherein the via penetrates the ceramic substrate; A resistive film forming step: A resistive film is formed on one side of the ceramic substrate; A metal layer forming step: forming a metal layer on both sides of the ceramic substrate, wherein a portion of the metal layer covers a portion of the resistive film, and a portion of the metal layer is formed on the inner wall of the via; A conductive structure forming step: forming a conductive structure on one side of the metal layer; a portion of the conductive structure forming a first electrode, a second electrode, and at least one circuit structure on one side of the ceramic substrate; a portion of the conductive structure forming a third electrode on the other side of the ceramic substrate; the third electrode being electrically connected to the first electrode, the second electrode, or the circuit structure through a conductive material located in the via. An insulating protective layer forming step: An insulating protective layer is formed on one side of the resistive film to cover the portion of the resistive film not covered by the metal layer; An auxiliary welding structure forming step: An auxiliary welding structure is formed on one side of the second electrode, the auxiliary welding structure being used to provide a chip mounting.

2. The method for manufacturing an electronic component according to claim 1, characterized in that, In the metal layer formation step, in a cross-section including the ceramic substrate, the resistive film and the metal layer, at least 10 micrometers at both ends of the resistive film are covered by the metal layer.

3. The method for manufacturing an electronic component according to claim 1, characterized in that, The thickness of the insulating protective layer is less than 10 micrometers; the material of the insulating protective layer is polyamic acid polymer, polyimide, polyamide, polybenzoxazole, benzocyclobutene, epoxy resin or SU-8 photoresist.

4. The method for manufacturing an electronic component according to claim 1, characterized in that, The resistive film is TaN, Ta2N, or Ta x N x The thickness of the resistive film is between 10 and 800 nanometers.

5. The method for manufacturing an electronic component according to claim 1, characterized in that, The auxiliary welding structure is a gold-tin alloy, and the thickness of the auxiliary welding structure is between 2 and 6 micrometers; the weight percentage of gold in the auxiliary welding structure is 65% to 80%.

6. The method for manufacturing an electronic component according to claim 1, characterized in that, An annealing step is further included between the conductive structure forming step and the insulating protective layer forming step: the product formed after the conductive structure forming step is placed in an oxygen-free environment with a temperature between 200 and 400 degrees Celsius for baking.

7. The method for manufacturing an electronic component according to claim 6, characterized in that, Between the annealing step and the insulating protective layer formation step, a laser step is also included: using a laser to trim the resistive film to adjust a resistance value of the resistive film to a preset resistance range.

8. An electronic component, characterized in that, The electronic component includes: A ceramic substrate having a plurality of vias, each of the vias penetrating the ceramic substrate; A resistive film is formed on one side of the ceramic substrate; A metal layer is formed on both sides of the ceramic substrate, and a portion of the metal layer covers a portion of the resistive film, and a portion of the metal layer is formed on the inner wall of the via. A conductive material is filled in each of the vias; A first electrode is formed on one side of a portion of the metal layer; A second electrode is formed on one side of a portion of the metal layer; A circuit structure formed on one side of a portion of the metal layer; A third electrode is formed on the other side of a portion of the metal layer, and the third electrode is electrically connected to the first electrode, the second electrode, or the third electrode through the conductive material; An insulating protective layer is formed on one side of the resistive film, the insulating protective layer covering the portion of the resistive film not covered by the metal layer; An auxiliary welding structure is formed on one side of the second electrode, the auxiliary welding structure being used to provide a chip mounting.

9. The electronic component according to claim 8, characterized in that, In a cross-section containing the ceramic substrate, the resistive film, and the metal layer, at least 10 micrometers at both ends of the resistive film are covered by the metal layer.

10. The electronic component according to claim 8, characterized in that, The thickness of the insulating protective layer is less than 10 micrometers; the material of the insulating protective layer is polyamic acid polymer, polyimide, polyamide, polybenzoxazole, benzocyclobutene, epoxy resin or SU-8 photoresist.

11. The electronic component according to claim 8, characterized in that, The resistive film is TaN, Ta2N, or Ta x N x The thickness of the resistive film is between 10 and 800 nanometers.

12. The electronic component according to claim 8, characterized in that, The auxiliary welding structure is a gold-tin alloy, and the thickness of the auxiliary welding structure is between 2 and 6 micrometers; the weight percentage of gold in the auxiliary welding structure is 65% to 80%.

13. The electronic component according to claim 8, characterized in that, The materials constituting the first electrode, the second electrode, and the third electrode are different from the conductive material; the first electrode, the second electrode, and the third electrode are made of titanium, platinum, or gold.

14. An electronic component, characterized in that, The electronic component includes: A first ceramic substrate having a plurality of first vias, each of the first vias penetrating the first ceramic substrate; A second ceramic substrate has a plurality of second vias, each of the second vias penetrating the second ceramic substrate; a third electrode is formed on one side of the second ceramic substrate; A connection structure is provided, through which the first ceramic substrate is connected to the second ceramic substrate; the connection structure, the conductive material in the first through-hole, and the conductive material in the second through-hole are electrically connected to each other; A resistive film is formed on one side of the first ceramic substrate; A conductive structure is formed on one side of the first ceramic substrate, and a portion of the conductive structure constitutes a first electrode, a portion of the conductive structure constitutes a second electrode, and a portion of the conductive structure constitutes at least one circuit structure; a portion of the conductive structure covers a portion of the resistive film; the third electrode is electrically connected to the first electrode, the second electrode, or the circuit structure through the connection structure, the conductive material in the first via, and the conductive material in the second via. An insulating protective layer is formed on one side of the resistive film, the insulating protective layer covering the portion of the resistive film not covered by the conductive structure; An auxiliary welding structure is formed on one side of the second electrode, the auxiliary welding structure being used to provide a chip mounting.

15. A thin-film resistor, characterized in that, The thin-film resistor comprises: A ceramic substrate having a plurality of vias, each of the vias penetrating the ceramic substrate; A resistive film is formed on one side of the ceramic substrate; A metal layer is formed on both sides of the ceramic substrate, and a portion of the metal layer covers a portion of the resistive film, and a portion of the metal layer is formed on the inner wall of the via. A conductive material is filled in each of the vias; A first electrode is formed on one side of a portion of the metal layer; A second electrode is formed on one side of a portion of the metal layer; A circuit structure formed on one side of a portion of the metal layer; A third electrode is formed on the other side of a portion of the metal layer, and the third electrode is electrically connected to the first electrode, the second electrode, or the circuit structure through the conductive material; An insulating protective layer is formed on one side of the resistive film, the insulating protective layer covering the portion of the resistive film not covered by the metal layer.

16. The thin-film resistor according to claim 15, characterized in that, In a cross-section containing the ceramic substrate, the resistive film, and the metal layer, at least 10 micrometers at both ends of the resistive film are covered by the metal layer.

17. The thin-film resistor according to claim 15, characterized in that, The thickness of the insulating protective layer is less than 10 micrometers; the material of the insulating protective layer is polyamic acid polymer, polyimide, polyamide, polybenzoxazole, benzocyclobutene, epoxy resin or SU-8 photoresist.

18. The thin-film resistor according to claim 15, characterized in that, The resistive film is TaN, Ta2N, or Ta x N x The thickness of the resistive film is between 10 and 800 nanometers.

19. The thin-film resistor according to claim 15, characterized in that, The materials constituting the first electrode, the second electrode, and the third electrode are different from the conductive material; the first electrode, the second electrode, and the third electrode are made of titanium, platinum, or gold.

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