Dual-band filter phase shifter with independent continuous tuning center frequency and insertion phase capability

Abstract

The application belongs to the field of microwave technology, and particularly relates to a double-passband filter phase shifter with independent continuous tuning center frequency and insertion phase capacity. The center frequency and insertion phase of the two filter passbands in the phase shifter can be independently adjusted. By adjusting the bias state of each variable capacitance diode, various working modes can be realized, including: low-frequency passband insertion phase is unchanged, and high-frequency passband phase is continuously adjustable; high-frequency passband insertion phase is unchanged, and low-frequency passband phase is continuously adjustable; high-frequency passband remains unchanged, and low-frequency passband can still realize continuous phase adjustment after frequency shift; low-frequency passband remains unchanged, and high-frequency passband can still realize continuous phase adjustment after frequency shift. Thus, multi-band independent controllable application can be realized.

Description

Technical Field

[0001] This invention belongs to the field of microwave technology, specifically relating to a dual-passband filter phase shifter with independent continuous tuning of the center frequency and the ability to insert phase. Background Technology

[0002] With increasingly scarce spectrum resources, the demand for reconfigurable multi-passband microwave devices is growing rapidly. Filters, as a crucial component of modern wireless communication systems, are used to filter out unwanted signals and transmit useful signals. Phase shifters, as key components in modern wireless communication systems, are used to adjust the phase characteristics of signals, achieving functions such as beam pointing control and signal modulation. To meet the differentiated circuit performance requirements of various communication scenarios, varactor diodes can be introduced into filter design. Their continuous tuning capability enables reconfigurable filter parameters, allowing them to flexibly adapt to diverse communication scenario requirements with highly reconfigurable characteristics.

[0003] In traditional multi-band architectures, reconfigurable filters and phase shifters are typically cascaded. This not only filters out out-of-band interference and noise but also allows for flexible beam scanning and shaping in the spatial domain when combined with antenna arrays. However, this approach suffers from large size and high complexity in matching the cascaded discrete components. Therefore, integrating different functions into mature reconfigurable filters to form multifunctional fusion devices is highly favored due to their advantages such as flexibility, high integration density, and high space utilization. However, while existing research has achieved good filtering and phase shifting characteristics, it has not yet enabled multi-band applications. Summary of the Invention

[0004] In view of this, the present invention proposes a dual-passband filter phase shifter with independent and continuous tuning capability of center frequency and insertion phase. The center frequency and insertion phase of both filter passbands can be independently adjusted. By adjusting the bias state of each varactor diode, multiple operating modes can be achieved, including: constant insertion phase in the low-frequency passband and continuously adjustable phase in the high-frequency passband; constant insertion phase in the high-frequency passband and continuously adjustable phase in the low-frequency passband; constant high-frequency passband and continuously adjustable phase in the low-frequency passband even after frequency shifting; and constant low-frequency passband and continuously adjustable phase in the high-frequency passband even after frequency shifting. Thus, multi-band independent controllable applications can be realized.

[0005] The technical solution adopted in this invention is as follows:

[0006] A dual-passband filter phase shifter with independent continuous tuning of the center frequency and the ability to insert phase includes: a circuit board, a first phase control network, a second phase control network, a first-stage inter-coupling structure, a second-stage inter-coupling structure, a third-stage inter-coupling structure, an input port, and an output port.

[0007] The circuit board is equipped with three dual-mode resonators, all of which are grounded ring microstrip resonators. The three resonators are designated as: a first dual-mode resonator, a second dual-mode resonator, and a third dual-mode resonator. Specifically: the first dual-mode resonator includes a first varactor diode JE1 and a second varactor diode JO1; the second dual-mode resonator includes a third varactor diode JE2 and a fourth varactor diode JO2; and the third dual-mode resonator includes a fifth varactor diode JE3 and a sixth varactor diode JO3. The first varactor diode JE1, the third varactor diode JE2, and the fifth varactor diode JE3 are each soldered to the center of their respective resonator and grounded through metallized vias. Used to adjust the high-frequency passband; the second varactor diode JO1, the fourth varactor diode JO2, and the sixth varactor diode JO3 are each a varactor diode connected in reverse series, soldered to the edge of the corresponding resonator and grounded through metallized vias, used to adjust the low-frequency passband; the second dual-mode resonator receives the signal from the first dual-mode resonator through the first-stage coupling structure and the second-stage coupling structure, and transmits the signal to the third dual-mode resonator through the third-stage coupling structure, used to provide an intermediate coupling path between the first dual-mode resonator and the third dual-mode resonator; the third dual-mode resonator is connected to the output port in sequence through the second distributed inductor, the fifth varactor diode CMO / the sixth varactor diode CME;

[0008] The first phase control network is a first distributed phase control network (DFPCN1), consisting of a first varactor CNO, a second varactor CNE, a third varactor CJE, a fourth varactor CJO, and a first lumped inductor and a second lumped inductor. The input port is connected to the first dual-mode resonator sequentially through the third varactor CJE / fourth varactor CJO and the first lumped inductor. The first varactor CNO and the second varactor CNE are connected in series, and the first varactor CNO is connected to the input... Microstrip line l0, second varactor CNE grounded through metallized vias; first lumped inductor, a surface-mount inductor with a specific inductance value, connected in series between input microstrip lines L1 and l2; second lumped inductor, a surface-mount inductor with a specific inductance value, connected in parallel with first varactor CNO; one end of third varactor CJE connected to the input port, the other end connected in series with fourth varactor CJO; one end of fourth varactor CJO connected to the edge node of first dual-mode resonator, the other end connected to third varactor CJE;

[0009] The second phase control network is the second distributed phase control network DFPCN2, which consists of a fifth varactor CMO, a sixth varactor CME, a seventh varactor CKE, an eighth varactor CKO, a third lumped inductor, and a fourth lumped inductor; wherein, the fifth varactor CMO and the sixth varactor CME are connected in series, and the fifth varactor CMO is connected to the output microstrip line L. 11The sixth varactor diode CME is grounded through a metallized via; one end of the seventh varactor diode CKE is connected to the output port, and the other end is connected in series with the fourth varactor diode CKO; one end of the eighth varactor diode CKO is connected to the edge node of the third dual-mode resonator, and the other end is grounded through a metallized via, and is connected in parallel with the sixth varactor diode JO3; the third lumped inductor is a surface-mount inductor with a specific inductance value, connected in series with the output microstrip line L9 and L1. 10 Between; the fourth lumped inductor is a surface-mount inductor with a specific inductance value, connected in parallel with the fifth varactor transistor CMO;

[0010] The first stage coupling structure is the seventh varactor diode J. 12 O, located at the coupling gap between the first and second dual-mode resonators, is a position where both odd-mode and even-mode components exist simultaneously; the seventh varactor diode J 12 One end of O is connected to the edge node of the first dual-mode resonator, i.e., the node where the second varactor diode JO1 is located, and the other end is connected to the edge node of the second dual-mode resonator, i.e., the node where the fourth varactor diode JO2 is located; by adjusting the seventh varactor diode J... 12 The capacitance value of O changes the coupling polarity between the first and second dual-mode resonators for odd and even modes, thereby generating a 180° phase change in the passband.

[0011] The second-stage inter-coupling structure is the eighth varactor diode J. 12 E is positioned between the first varactor diode JE1 of the first dual-mode resonator and the third varactor diode JE2 of the second dual-mode resonator; the eighth varactor diode J... 12 One end of E is connected to the center node of the first dual-mode resonator, i.e., the node where the first varactor diode JE1 is located, and the other end is connected to the center node of the second dual-mode resonator, i.e., the node where the third varactor diode JE2 is located; by adjusting the eighth varactor diode J... 12 The capacitance value of E only changes the coupling polarity of the first dual-mode resonator and the second dual-mode resonator for the even mode, so as to produce a 180° phase change in the passband.

[0012] The third-stage inter-coupling structure is used to provide fixed coupling between the second dual-mode resonator and the third dual-mode resonator.

[0013] Furthermore, the first dual-mode resonator, the second dual-mode resonator, and the third dual-mode resonator are cascaded in sequence; wherein, the first dual-mode resonator is coupled to the second dual-mode resonator through a first-stage coupling structure and a second-stage coupling structure, and the second dual-mode resonator is coupled to the third dual-mode resonator through a third-stage coupling structure.

[0014] Furthermore, the phase shifter has a high-frequency passband and a low-frequency passband; the high-frequency passband is adjusted by a first varactor diode JE1, a third varactor diode JE2, and a fifth varactor diode JE3; the low-frequency passband is adjusted by a second varactor diode JO1, a fourth varactor diode JO2, and a sixth varactor diode JO3.

[0015] Furthermore, the first phase control network and the second phase control network are used to adjust the phases of the first dual-mode resonator and the third dual-mode resonator, respectively; the first inter-stage coupling structure and the second inter-stage coupling structure are used to adjust the phase difference between the first dual-mode resonator and the second dual-mode resonator; the first phase control network, the second phase control network, the first inter-stage coupling structure and the second inter-stage coupling structure are jointly configured to provide reconfigurable phase shifts for the high-frequency passband and the low-frequency passband.

[0016] Furthermore, the phase offset provided by the first phase control network and the second phase control network is 180°, and the phase offset provided by the first inter-stage coupling structure and the second inter-stage coupling structure is 180°. The sum of the two constitutes a 360° phase adjustable range.

[0017] Furthermore, the circuit board has a two-layer PCB structure, including a top metal layer and a back metal ground layer. The top metal layer is connected to the back metal ground layer through metallized vias to form a planar microstrip circuit structure.

[0018] Furthermore, the first-stage inter-coupling structure includes a gap coupling path and a seventh varactor diode J. 12 O is positioned on the slot coupling path. In this way, the interstage coupling structure achieves hybrid coupling between the two resonators through a combination of slot coupling and varactor coupling.

[0019] By adopting the above technical solution, the present invention has the following beneficial effects:

[0020] The beneficial effects of this invention are as follows:

[0021] 1. The dual-passband filter phase shifter of the present invention has four different operating modes. It is a dual-passband reconfigurable filter phase shifter. Through two phase control networks, it can achieve independent 180° phase shift for the two passbands. On this basis, by adjusting the coupling structure between the first stage and the coupling structure between the second stage, it can achieve a 180° phase shift, for a total of 360° phase shift. By adjusting the varactor tube that controls the resonant frequency, its center frequency can be independently adjustable. Finally, it successfully realizes the independent reconfigurability of the center frequencies of the two passbands and the 360° continuous adjustability of the inserted phase.

[0022] 2. Based on the dual-frequency design concept, a dual-frequency J-converter and a dual-frequency NRN circuit were constructed. The dual-frequency J-converter consists of CJE, CJO, and their parallel inductors; similarly, its outputs correspond to CKE and CKO. The dual-frequency NRN circuit consists of CNE, CNO, and their parallel inductors; similarly, its outputs correspond to CME and CMO. The NRN is a non-resonant admittance (Non-Resonant Node, connected in parallel to the resonator). Through this structure, independent control of two frequencies can be achieved using a single circuit, thereby significantly reducing circuit area, lowering design complexity, and improving the ease of circuit implementation and control. Attached Figure Description

[0023] Figure 1 This is the circuit topology of the dual-passband filter phase shifter of the present invention;

[0024] Figure 2 A schematic diagram of a dual-passband filter phase shifter circuit is provided for an embodiment.

[0025] Figure 3 The test results of the S-parameters of the dual-passband filter phase shifter provided in the embodiment are shown in the figure. Here, a is the amplitude characteristic diagram of the S-parameters, b is the case of adjusting the insertion phase after frequency shifting of the low-frequency passband, and c is the case of adjusting the insertion phase after frequency shifting of the high-frequency passband.

[0026] Figure 4 The test results of the S-parameters of the dual-passband filter phase shifter provided in the embodiment are shown in the figure. Here, a is the amplitude characteristic diagram of the S-parameters, b is the case of adjusting the insertion phase after frequency shifting of the low-frequency passband, and c is the case of adjusting the insertion phase after frequency shifting of the high-frequency passband.

[0027] Figure 5 The test results of the S-parameters of the dual-passband filter phase shifter provided in the embodiment are shown in the figure. Here, a is the amplitude characteristic diagram of the S-parameters, b is the case of adjusting the insertion phase after frequency shifting of the low-frequency passband, and c is the case of adjusting the insertion phase after frequency shifting of the high-frequency passband.

[0028] Figure 6 The test results of the S-parameters of the dual-passband filter phase shifter provided in the embodiment are shown in the figure. Here, a is the amplitude characteristic diagram of the S-parameters, b is the case of adjusting the insertion phase after frequency shifting of the low-frequency passband, and c is the case of adjusting the insertion phase after frequency shifting of the high-frequency passband.

[0029] Figure 7 This is a physical image of a product manufactured in accordance with the technical solution of this invention. Detailed Implementation

[0030] The technical solution of the present invention will be described in detail below with reference to the accompanying drawings and embodiments.

[0031] Figure 1 This is the circuit topology of the dual-passband filter phase shifter of the present invention, J in the figurea For J converter, J a1 Similarly, J 12 J 12E J 23 For each coupling structure, R1, R2, and R3 are the first dual-mode resonator, the second dual-mode resonator, and the third dual-mode resonator, respectively. Figure 2 This is a schematic diagram of a dual-passband filter phase shifter circuit provided for an embodiment. Figure 1 , Figure 2 As shown, the present invention provides a dual-passband filter phase shifter with independent continuous tuning center frequency and phase insertion capability, comprising: a circuit board, a first phase control network, a second phase control network, a first-stage coupling structure, a second-stage coupling structure, a third-stage coupling structure, an input port, and an output port.

[0032] The circuit board is equipped with three dual-mode resonators, all of which are grounded ring microstrip resonators. The three resonators are designated as: a first dual-mode resonator, a second dual-mode resonator, and a third dual-mode resonator. Specifically: the first dual-mode resonator includes a first varactor diode JE1 and a second varactor diode JO1; the second dual-mode resonator includes a third varactor diode JE2 and a fourth varactor diode JO2; and the third dual-mode resonator includes a fifth varactor diode JE3 and a sixth varactor diode JO3. The first varactor diode JE1, the third varactor diode JE2, and the fifth varactor diode JE3 are each soldered to the center of their respective resonator and grounded through metallized vias. The first dual-mode resonator is used to adjust the high-frequency passband; the second varactor diode JO1, the fourth varactor diode JO2, and the sixth varactor diode JO3 are each a varactor diode connected in reverse series, soldered to the edge of the corresponding resonator and grounded through metallized vias, used to adjust the low-frequency passband; the second dual-mode resonator receives the signal from the first dual-mode resonator through the first and second inter-stage coupling structures, and transmits the signal to the third dual-mode resonator through the third inter-stage coupling structure, used to provide an intermediate coupling path between the first and third dual-mode resonators; the third dual-mode resonator is connected to the output port in sequence through the second distributed inductor, the fifth varactor diode CMO / the sixth varactor diode CME. In this embodiment, the first dual-mode resonator, the second dual-mode resonator, and the third dual-mode resonator are cascaded in sequence; wherein, the first dual-mode resonator is coupled to the second dual-mode resonator through the first and second inter-stage coupling structures, and the second dual-mode resonator is coupled to the third dual-mode resonator through the third inter-stage coupling structure. The circuit board has a two-layer PCB structure, including a top metal layer and a back metal ground layer. The top metal layer is connected to the back metal ground layer through metallized vias to form a planar microstrip circuit structure.

[0033] The first phase control network is a first distributed phase control network (DFPCN1), consisting of a first varactor CNO, a second varactor CNE, a third varactor CJE, a fourth varactor CJO, and a first lumped inductor and a second lumped inductor. The input port is connected to the first dual-mode resonator sequentially through the third varactor CJE / fourth varactor CJO and the first lumped inductor. The first varactor CNO and the second varactor CNE are connected in series, and the first varactor CNO is connected to the input... Microstrip line l0, the second varactor CNE is grounded through a metallized via; the first lumped inductor is a surface-mount inductor with a specific inductance value, connected in series between the input microstrip lines L1 and l2; the second lumped inductor is a surface-mount inductor with a specific inductance value, connected in parallel with the first varactor CNO; one end of the third varactor CJE is connected to the input port, and the other end is connected in series with the fourth varactor CJO; one end of the fourth varactor CJO is connected to the edge node of the first dual-mode resonator, and the other end is connected to the third varactor CJE.

[0034] The second phase control network is the second distributed phase control network DFPCN2, which consists of a fifth varactor CMO, a sixth varactor CME, a seventh varactor CKE, an eighth varactor CKO, a third lumped inductor, and a fourth lumped inductor; wherein, the fifth varactor CMO and the sixth varactor CME are connected in series, and the fifth varactor CMO is connected to the output microstrip line L. 11 The sixth varactor diode CME is grounded through a metallized via; one end of the seventh varactor diode CKE is connected to the output port, and the other end is connected in series with the fourth varactor diode CKO; one end of the eighth varactor diode CKO is connected to the edge node of the third dual-mode resonator, and the other end is grounded through a metallized via, and is connected in parallel with the sixth varactor diode JO3; the third lumped inductor is a surface-mount inductor with a specific inductance value, connected in series with the output microstrip line L9 and L1. 10 Between; the fourth lumped inductor is a surface-mount inductor with a specific inductance value, connected in parallel with the fifth varactor transistor CMO.

[0035] The first stage coupling structure is the seventh varactor diode J. 12 O, located at the coupling gap between the first and second dual-mode resonators, is a position where both odd-mode and even-mode components exist simultaneously; the seventh varactor diode J 12 One end of O is connected to the edge node of the first dual-mode resonator, i.e., the node where the second varactor diode JO1 is located, and the other end is connected to the edge node of the second dual-mode resonator, i.e., the node where the fourth varactor diode JO2 is located; by adjusting the seventh varactor diode J... 12The capacitance value of O changes the coupling polarity between the first dual-mode resonator and the second dual-mode resonator for odd and even modes, so as to generate a 180° phase change in the passband; the first interstage coupling structure includes a gap coupling path, one end of the seventh varactor diode is connected to the input end of the gap coupling path, and the other end is connected to the output end of the gap coupling path, thereby forming a parallel structure with the gap coupling path.

[0036] The second-stage inter-coupling structure is the eighth varactor diode J. 12 E, positioned between the first varactor diode JE1 of the first dual-mode resonator and the third varactor diode JE2 of the second dual-mode resonator; the eighth varactor diode J... 12 One end of E is connected to the center node of the first dual-mode resonator, i.e., the node where the first varactor diode JE1 is located, and the other end is connected to the center node of the second dual-mode resonator, i.e., the node where the third varactor diode JE2 is located; by adjusting the eighth varactor diode J... 12 The capacitance value of E only changes the coupling polarity of the first dual-mode resonator and the second dual-mode resonator for the even mode, so as to generate a 180° phase change in the passband; the third-stage inter-coupling structure is used to provide a fixed coupling between the second dual-mode resonator and the third dual-mode resonator.

[0037] The dual-passband filter phase shifter of this embodiment has a high-frequency passband and a low-frequency passband; the high-frequency passband is adjusted by the first varactor diode JE1, the third varactor diode JE2 and the fifth varactor diode JE3; the low-frequency passband is adjusted by the second varactor diode JO1, the fourth varactor diode JO2 and the sixth varactor diode JO3.

[0038] The first phase control network and the second phase control network are used to adjust the phases of the first dual-mode resonator and the third dual-mode resonator, respectively. The first inter-stage coupling structure and the second inter-stage coupling structure are used to adjust the phase difference between the first dual-mode resonator and the second dual-mode resonator. The first phase control network, the second phase control network, the first inter-stage coupling structure, and the second inter-stage coupling structure are collectively configured to provide reconfigurable phase offsets for the high-frequency passband and the low-frequency passband. The phase offset provided by the first phase control network and the second phase control network is 180°, and the phase offset provided by the first inter-stage coupling structure and the second inter-stage coupling structure is 180°, together forming a 360° adjustable phase range.

[0039] The aforementioned dual-passband filter phase shifter was implemented using microstrip technology. The circuit board material was Rogers 6010, with a thickness of 1.27 mm. Varactor diodes JO and JE were also used. , CN,CJ,CM,CK,J 12 E,J 23MACOM's MA46H202, MA46H203, and MA46H204 varactor diodes were selected. 12 MACOM's MAVR.000401 was selected. All varactor diodes are controlled by adjusting the bias voltage applied to them. Changes in the bias voltage cause changes in the capacitance of the varactor diode, thus affecting the circuit. Varactor diodes J0 and JE are used to adjust the center frequency of the filter passband; varactor diode J... 12 J 23 J 12E The varactor transistors CN, CJ, CM, and CK are located in the phase control network to control the coupling between resonators, enabling 180° continuous adjustment of the insertion phase between the high-frequency and low-frequency passbands. The overall circuit has 17 voltage controls, and by flexibly controlling all bias voltages, the designed filter response and attenuation levels are successfully adjusted. The optimal circuit dimensions obtained after simulation optimization are: L0 = 10.4mm, L1 = 4.3mm, L2 = 3.4mm, L3 = 10.2mm, L4 = 11.6mm, L5 = 4.17mm, L6 = 12.9mm, L7 = 3mm, L8 = 7.4mm, L9 = 3.4mm, L... 10 =4.4mm, L 11 =10.4mm, L 12 =5.5mm, L 13 =4.3mm, W m =1.17mm W m1 =0.56mm, W m2 =0.2mm, W m3 =1mm, g=0.1mm, g1=0.2mm. Refer to the actual sample drawing made according to these specifications. Figure 7 .

[0040] Figure 3 a, b, c to Figure 6 The numbers a, b, and c together demonstrate the S-parameter test results of this invention. Figure 3 a to Figure 7 As can be seen from the presentation, the present invention has successfully achieved four different operating modes and realized independent and continuous control of the two passband center frequencies and the insertion phase. The above results verify the correctness and superiority of the present invention.

Claims

1. A dual-passband filter phase shifter with independent continuous tuning center frequency and phase insertion capability, characterized in that, include: Circuit board, first phase control network, second phase control network, first-stage coupling structure, second-stage coupling structure, third-stage coupling structure, input port and output port; The circuit board is equipped with three dual-mode resonators, all of which are grounded ring microstrip resonators. The three resonators are designated as: a first dual-mode resonator, a second dual-mode resonator, and a third dual-mode resonator. Specifically: the first dual-mode resonator includes a first varactor diode JE1 and a second varactor diode JO1; the second dual-mode resonator includes a third varactor diode JE2 and a fourth varactor diode JO2; and the third dual-mode resonator includes a fifth varactor diode JE3 and a sixth varactor diode JO3. The first varactor diode JE1, the third varactor diode JE2, and the fifth varactor diode JE3 are each soldered to the center of their respective resonators and grounded through metallized vias, used to adjust the high-frequency passband. The second varactor diode JO1, the fourth varactor diode JO2, and the sixth varactor diode JO3 are each a varactor diode connected in reverse series, soldered to the edge of the corresponding resonator and grounded through metallized vias, used to adjust the low-frequency passband; the second dual-mode resonator receives the signal from the first dual-mode resonator through the first and second inter-stage coupling structures, and transmits the signal to the third dual-mode resonator through the third inter-stage coupling structure, used to provide an intermediate coupling path between the first and third dual-mode resonators; the third dual-mode resonator is connected to the output port in sequence through the second distributed inductor, the fifth varactor diode CMO / the sixth varactor diode CME; The first phase control network is a first distributed phase control network (DFPCN1), consisting of a first varactor CNO, a second varactor CNE, a third varactor CJE, a fourth varactor CJO, and a first lumped inductor and a second lumped inductor. The input port is connected to the first dual-mode resonator sequentially through the third varactor CJE / fourth varactor CJO and the first lumped inductor. The first varactor CNO and the second varactor CNE are connected in series, with the first varactor CNO connected to the input microstrip line l0 and the second varactor CNE grounded through a metallized via. The first lumped inductor is a surface-mount inductor with a specific inductance value, connected in series between the input microstrip lines L1 and L2. The second lumped inductor is also a surface-mount inductor with a specific inductance value, connected in series with the first varactor CNO. Parallel connection; one end of the third varactor CJE is connected to the input port, and the other end is connected in series with the fourth varactor CJO; one end of the fourth varactor CJO is connected to the edge node of the first dual-mode resonator, and the other end is connected to the third varactor CJE; The second phase control network is the second distributed phase control network DFPCN2, which consists of a fifth varactor CMO, a sixth varactor CME, a seventh varactor CKE, an eighth varactor CKO, a third lumped inductor, and a fourth lumped inductor; wherein, the fifth varactor CMO and the sixth varactor CME are connected in series, and the fifth varactor CMO is connected to the output microstrip line L. 11 The sixth varactor diode CME is grounded through a metallized via; one end of the seventh varactor diode CKE is connected to the output port, and the other end is connected in series with the fourth varactor diode CKO; one end of the eighth varactor diode CKO is connected to the edge node of the third dual-mode resonator, and the other end is grounded through a metallized via, and is connected in parallel with the sixth varactor diode JO3; the third lumped inductor is a surface-mount inductor with a specific inductance value, connected in series with the output microstrip line L9 and L1. 10 Between; the fourth lumped inductor is a surface-mount inductor with a specific inductance value, connected in parallel with the fifth varactor transistor CMO; The first stage coupling structure is the seventh varactor diode J. 12 O, located at the coupling gap between the first and second dual-mode resonators, is a position where both odd-mode and even-mode components exist simultaneously; the seventh varactor diode J 12 One end of O is connected to the edge node of the first dual-mode resonator, i.e., the node where the second varactor diode JO1 is located, and the other end is connected to the edge node of the second dual-mode resonator, i.e., the node where the fourth varactor diode JO2 is located; by adjusting the seventh varactor diode J... 12 The capacitance value of O changes the coupling polarity between the first and second dual-mode resonators for odd and even modes, thereby generating a 180° phase change in the passband. The second-stage inter-coupling structure is the eighth varactor diode J. 12 E, positioned between the first varactor diode JE1 of the first dual-mode resonator and the third varactor diode JE2 of the second dual-mode resonator; the eighth varactor diode J... 12 One end of E is connected to the center node of the first dual-mode resonator, i.e., the node where the first varactor diode JE1 is located, and the other end is connected to the center node of the second dual-mode resonator, i.e., the node where the third varactor diode JE2 is located; by adjusting the eighth varactor diode J... 12 The capacitance value of E only changes the coupling polarity of the first dual-mode resonator and the second dual-mode resonator for the even mode, so as to produce a 180° phase change in the passband. The third-stage inter-coupling structure is used to provide fixed coupling between the second dual-mode resonator and the third dual-mode resonator.

2. The dual-passband filter phase shifter according to claim 1, characterized in that, The first dual-mode resonator, the second dual-mode resonator, and the third dual-mode resonator are cascaded in sequence; wherein, the first dual-mode resonator is coupled to the second dual-mode resonator through a first-stage coupling structure and a second-stage coupling structure, and the second dual-mode resonator is coupled to the third dual-mode resonator through a third-stage coupling structure.

3. The dual-passband filter phase shifter according to claim 2, characterized in that, The phase shifter has a high-frequency passband and a low-frequency passband; the high-frequency passband is adjusted by a first varactor diode JE1, a third varactor diode JE2 and a fifth varactor diode JE3; the low-frequency passband is adjusted by a second varactor diode JO1, a fourth varactor diode JO2 and a sixth varactor diode JO3.

4. The dual-passband filter phase shifter according to claim 3, characterized in that, The first phase control network and the second phase control network are used to adjust the phases of the first dual-mode resonator and the third dual-mode resonator, respectively. The first-stage coupling structure and the second-stage coupling structure are used to adjust the phase difference between the first dual-mode resonator and the second dual-mode resonator; The first phase control network, the second phase control network, the first inter-stage coupling structure, and the second inter-stage coupling structure are configured together to provide reconfigurable phase shifts for the high-frequency passband and the low-frequency passband.

5. The dual-passband filter phase shifter according to claim 4, characterized in that, The phase offset provided by the first phase control network and the second phase control network is 180°, and the phase offset provided by the first inter-stage coupling structure and the second inter-stage coupling structure is 180°. The sum of the two constitutes a 360° phase adjustable range.

6. The dual-passband filter phase shifter according to claim 1, characterized in that, The circuit board has a two-layer PCB structure, including a top metal layer and a back metal ground layer. The top metal layer is connected to the back metal ground layer through metallized vias to form a planar microstrip circuit structure.

7. The dual-passband filter phase shifter according to claim 2, characterized in that, The first-stage inter-coupling structure includes a gap coupling path and a seventh varactor diode J. 12 O is set on the gap coupling path.

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