Multi-scale copper sintering slurry and preparation method and application thereof

By using a copper sintering slurry composed of multi-scale copper particles and an organic system, the problems of high thermal conductivity and high temperature resistance in third-generation semiconductor chips have been solved, achieving high-strength and high-conductivity interconnection effects while reducing sintering temperature and cost.

CN122266848APending Publication Date: 2026-06-23SHENZHEN RES INST OF NANKAI UNIV
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Patent Information

Application Number
CN202512053711.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-12-31
Publication Date
2026-06-23

AI Technical Summary

Technical Problem

Existing technologies cannot meet the high thermal conductivity and high temperature resistance requirements of third-generation semiconductor chips. Traditional packaging interconnect materials suffer from low connection strength, poor conductivity, and high cost.

Method used

A copper sintering slurry composed of multi-scale copper particles and an organic system is used to achieve high thermal conductivity and high electrical conductivity interconnection through a low-temperature densification sintering process. The packing density is increased by using a mixture of nano, submicron and micron particles, and the preparation process is simplified by combining low-cost organic solvents and diluents.

Benefits of technology

It achieves high-strength, low-cost semiconductor chip interconnection, with high thermal conductivity and electrical conductivity, meeting the high-temperature service requirements of third-generation semiconductor chips, reducing sintering temperature and pressure, and improving connection performance.

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Abstract

The invention relates to the technical field of electronic packaging interconnection, and discloses multi-scale copper sintering slurry and a preparation method and application thereof. The multi-scale copper sintering slurry is composed of 85 wt.% of multi-scale copper particles and 15 wt.% of organic system raw materials. The multiple scales are a mixture of a nano scale, a submicron scale and a micron scale; the organic system comprises a solvent, a diluent, a dispersing agent and an adhesive. According to the multi-scale copper sintering slurry, low-temperature dense sintering interconnection is achieved through dense accumulation of multi-scale copper particles, an interconnection connector with high strength (larger than or equal to 90 MPa), high heat conductivity (larger than or equal to 300 W / m.K) and high electric conductivity (larger than or equal to 1 * 10 < 7 > S / m) can be obtained, and the process and performance requirements of third-generation semiconductor chips and electronic packaging interconnection are met.
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