Ultra-clean high-purity electronic-grade acetone and preparation method thereof

By employing a step-by-step process involving pre-purification, selective complexation, low-temperature plasma oxidation, three-stage extraction-vacuum distillation, composite adsorption-membrane permeation coupled dehydration, and three-stage gradient demicronization, the problem of poor acetone purification in existing technologies has been solved, achieving the preparation of ultra-clean, high-purity electronic-grade acetone with high purity and efficient impurity removal.

CN122325307AInactive Publication Date: 2026-07-03FTSCI HUBEI BIOTECH CO LTD +3
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Patent Information

Application Number
CN202610418532.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-03-31
Publication Date
2026-07-03
Estimated Expiration
Not applicable · inactive patent

AI Technical Summary

Technical Problem

Existing acetone purification processes have limited effectiveness in removing trace metal ions and submicron particles, are prone to leaving strong oxidants, consume high energy, have complex processes, and are difficult to stably produce ultra-clean, high-purity electronic-grade acetone that meets SEMIG4 standards.

Method used

A step-by-step process is adopted, which includes pre-purification, selective complexation, low-temperature plasma oxidation, three-stage extraction-vacuum distillation, composite adsorption-membrane permeation coupled dehydration, and three-stage gradient demicronization, to specifically remove various impurities such as metal ions, aldehyde organic matter, moisture, and particles.

Benefits of technology

It achieves complete removal of impurities, with product purity reaching 99.995wt%, moisture ≤5ppm, single metal ion content ≤5ppb, ≥0.1μm particle content ≤5/mL, aldehyde compound content ≤0.5ppm, and evaporation residue ≤0.5ppm, fully complying with SEMIG4 standards. The process conditions are mild, energy consumption is controllable, and secondary pollution is avoided.

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Abstract

The invention discloses a preparation method of ultra-clean high-purity electronic-grade acetone, and belongs to the technical field of acetone refining. The method comprises the following steps: pre-purification, selective complexation, low-temperature plasma oxidation, three-stage extraction-vacuum rectification, composite adsorption-membrane permeation coupling dehydration and three-stage gradient particle removal. According to the method, multiple impurities such as metal ions, moisture, aldehyde organic matters and particles are synergistically removed through a stepped impurity removal process, the purity of the finally prepared acetone is larger than or equal to 99.995 wt%, the moisture is smaller than or equal to 5 ppm, the content of single metal ions is smaller than or equal to 5 ppb, the content of particles larger than or equal to 0.1 micron is smaller than or equal to 5 / mL, the content of aldehyde compounds is smaller than or equal to 0.5 ppm, the content of evaporation residues is smaller than or equal to 0.5 ppm, and the SEMIG4 standard is comprehensively met. The method has the advantages of coherent process flow, thorough impurity removal and controllable energy consumption, and is suitable for application scenes with strict requirements on acetone purity in the fields of semiconductors, high-end electronics, precision analysis and the like.
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