Adhesive tape

Abstract

The object of the present invention is to provide an adhesive tape that can reliably suppress or prevent breakage when a substrate such as a semiconductor wafer attached to the adhesive tape is cut along the thickness direction by laser irradiation to monolithize it. The adhesive tape (100) of the present invention comprises a substrate (4) and an adhesive layer (2). The adhesive tape (100) is used in the following situation: with the substrate fixed to the adhesive layer (2), the substrate is cut along the thickness direction by laser irradiation, and a plurality of components are formed by monolithizing the substrate, and then each component is detached from the adhesive layer (2). The substrate (4) satisfies a weight reduction rate of 50% or less from room temperature to 420°C on the TG curve obtained by simultaneous differential thermal / thermogravimetric measurement.

Description

Technical Field

[0001] This invention relates to an adhesive tape used for temporarily fixing a substrate and components. Background Technology

[0002] In response to the increasing demand for high-density and high-integration semiconductor devices due to the increasing functionality of electronic devices and the expansion of mobile applications in recent years, the development of high-capacity and high-density IC packages is underway.

[0003] As a method for manufacturing these semiconductor devices, for example, adhesive tape is first attached to a semiconductor substrate (semiconductor wafer) serving as a substrate. Then, while securing the periphery of the semiconductor substrate with wafer rings, a laser-based dicing process is performed. In the dicing process, the semiconductor substrate is cut along its thickness direction by irradiating it with a laser, separating (monolithizing) the semiconductor substrate into individual semiconductor elements (semiconductor chips). Next, an extension process is performed where the adhesive tape is stretched radially using wafer rings to create gaps between adjacent semiconductor elements. Following this, a pick-up process is performed, where the monolithized semiconductor elements are picked up using a pin-push-up state. The picked-up semiconductor elements are then transferred to a mounting process for mounting on a metal lead frame or substrate (e.g., tape substrate, rigid organic substrate, etc.). In the mounting process, the picked-up semiconductor elements are bonded to the lead frame or substrate, for example, via an underfill material, and then sealed on the lead frame or substrate using a sealing portion, thereby manufacturing a semiconductor device.

[0004] In such a method for manufacturing a semiconductor device that uses lasers in the cutting of a semiconductor substrate, an adhesive tape (cutting tape) is used for the temporary fixation of the semiconductor substrate (semiconductor wafer) and the semiconductor elements monolithized from the semiconductor substrate (for example, see Japanese Patent Document 1).

[0005] Generally, the adhesive tape has a substrate (thin film substrate) and an adhesive layer formed on the substrate, on which a semiconductor substrate is fixed. In the adhesive tape forming this structure, as described in the semiconductor device manufacturing method above, after a cutting process in which the semiconductor substrate is cut by laser irradiation, an expansion process in which the adhesive tape is stretched into a radial shape is performed. This creates gaps between adjacent semiconductor elements. In this state, a pick-up process for the semiconductor elements is performed.

[0006] In the aforementioned cutting process, when the semiconductor substrate is cut along its thickness direction by laser irradiation, the focal point of the laser irradiating the semiconductor substrate is concentrated at the top of the substrate or in the middle of its thickness direction. Furthermore, when the semiconductor substrate is thin, the laser focal point often concentrates at the top. As a result, the semiconductor substrate is cut along its thickness direction. At this time, because the laser focal point is close to the separation distance of the adhesive tape, unintentional breakage occurs in the adhesive tape. Consequently, the following problem arises: in the subsequent extension and pick-up processes, it is impossible to position the semiconductor components in the pre-designed locations, thus hindering the precise pick-up of the semiconductor components.

[0007] Furthermore, such problems not only occur when a semiconductor element is obtained by cutting a semiconductor substrate (semiconductor wafer) along the thickness direction, but also when a component is obtained by cutting various substrates such as glass substrates, ceramic substrates, resin material substrates and metal material substrates along the thickness direction (monolithization) and then picking up the monolithized component while stretching the adhesive tape into a radial shape.

[0008] Existing technical documents

[0009] Patent documents

[0010] Patent document 1: Japanese Patent Application Publication No. 2002-192370. Summary of the Invention

[0011] The technical problem to be solved by the invention

[0012] The present invention aims to provide an adhesive tape for use in situations where, after a cutting process, a component is detached from the adhesive tape by sequentially passing through an extension process of the adhesive tape and a pickup process of a pickup component. The cutting process involves cutting a substrate such as a semiconductor wafer attached to the adhesive tape along the thickness direction by laser irradiation to monolithize it, thereby forming a component such as a semiconductor chip on the adhesive tape. In this case, the adhesive tape can reliably suppress or prevent breakage in the adhesive tape when monolithizing the substrate.

[0013] means for solving technical problems

[0014] Such an objective is achieved by the present invention described in (1) to (10) below.

[0015] (1) An adhesive tape comprising a substrate and an adhesive layer having an adhesive base resin as the main material and laminated on one side of the substrate, and used in the following situation: while a substrate is fixed to the adhesive layer, the substrate is cut along its thickness direction by irradiating the substrate with a laser beam, a plurality of components are formed by monolithizing the substrate, and then each of the components is detached from the adhesive layer, wherein the adhesive tape is characterized by, In the substrate, the weight reduction rate from room temperature to 420°C on the TG curve obtained by simultaneous differential thermal / thermal weight measurement according to JIS K 0129 is less than 50%.

[0016] (2) The adhesive tape as described in (1) above, wherein the tensile modulus of elasticity of the substrate at 23°C is less than 200 MPa.

[0017] (3) The adhesive tape as described in (1) or (2) above, wherein the substrate contains a polyolefin resin as the main material.

[0018] (4) The adhesive tape as described in any one of (1) to (3) above, wherein the polyolefin resin is a polyethylene resin.

[0019] (5) The adhesive tape as described in any one of (1) to (4) above, wherein the polyethylene resin mainly contains a component with a specific gravity of 0.94 or less.

[0020] (6) The adhesive tape as described in any one of (1) to (5) above, wherein the base resin is an acrylic resin.

[0021] (7) The adhesive tape as described in any one of (1) to (6) above, wherein the adhesive layer further contains a curable resin that is cured by the application of energy, and is configured to reduce the adhesive force on the adhesive layer to the substrate and the component by applying the energy.

[0022] (8) The adhesive tape as described in any one of (1) to (7) above, wherein the substrate has a thickness of 30 μm or more and 300 μm or less.

[0023] (9) The adhesive tape as described in any one of (1) to (8) above, wherein the adhesive layer has a thickness of 5 μm or more and 30 μm or less.

[0024] (10) The adhesive tape as described in any one of (1) to (9) above, wherein the adhesive tape is configured such that the separation of the component from the adhesive layer is performed by extending the adhesive tape in the surface direction and pulling the component out from the opposite side of the substrate while it is pushed up from the substrate side.

[0025] The effects of the invention

[0026] According to the present invention, after a cutting process in which a substrate such as a semiconductor wafer attached to an adhesive tape is cut along the thickness direction by laser irradiation to monolithize it, thereby forming a component such as a semiconductor chip on the adhesive tape, an extension process of stretching the adhesive tape and a pickup process of picking up the component are sequentially performed. This ensures that, during the monolithization of the substrate, breakage in the adhesive tape used to detach the component from the adhesive tape can be reliably suppressed or prevented. Therefore, the component pickup process in the pickup step can be performed with excellent precision. Attached Figure Description

[0027] Figure 1 This is a longitudinal cross-sectional view showing an example of a semiconductor device manufactured using the adhesive tape of the present invention.

[0028] Figure 2 This is for illustrating the manufacture using the adhesive tape of the present invention. Figure 1 A longitudinal cross-sectional view of the method for using the semiconductor device shown.

[0029] Figure 3 This is for illustrating the manufacture using the adhesive tape of the present invention. Figure 1 A longitudinal cross-sectional view of the method for using the semiconductor device shown.

[0030] Figure 4 This is for illustrating the manufacture using the adhesive tape of the present invention. Figure 1 A longitudinal cross-sectional view of the method for using the semiconductor device shown.

[0031] Figure 5 It is an enlarged representation located by Figure 2 The area [A] enlarged cross-sectional view of the semiconductor chip formed by cutting the semiconductor substrate along the thickness direction by laser irradiation in the region enclosed by the dotted line.

[0032] Figure 6 This is a longitudinal cross-sectional view showing an embodiment of the adhesive tape of the present invention. Detailed Implementation

[0033] The adhesive tape of the present invention will now be described in detail with reference to the preferred embodiments shown in the accompanying drawings.

[0034] First, before describing the adhesive tape of the present invention, an example of a semiconductor device manufactured using the adhesive tape of the present invention will be described.

[0035] Semiconductor Devices

[0036] Figure 1 This is a longitudinal cross-sectional view showing an example of a semiconductor device manufactured using the adhesive tape of the present invention. Furthermore, in the following description, Figure 1The upper side is referred to as "upper" and the lower side as "lower". Furthermore, the dimensions in the various figures referenced in this specification are exaggerated in the left-right direction and / or thickness direction, and are quite different from the actual dimensions.

[0037] Figure 1 The semiconductor device 10 shown has a semiconductor chip 20 (semiconductor element), an interposer 30 (substrate) supporting the semiconductor chip 20, a plurality of conductive bumps 70 (terminals), and a molding portion 17 (sealing portion) sealing the semiconductor chip 20.

[0038] Intermediate layer 30 is an insulating substrate, such as being made of various resin materials such as polyimide, epoxy resin, cyanate ester, bismaleimide triazine (BT resin). The top view shape of this intermediate layer 30 is usually set as a square, rectangle, or other quadrilateral shape.

[0039] On the upper surface (one side) of the intermediate layer 30, for example, a terminal 41 made of a conductive metal material such as copper is provided in a prescribed shape.

[0040] Furthermore, a plurality of through holes (not shown) are formed in the intermediate layer 30 along its thickness direction.

[0041] Each bump 70 is electrically connected at one end (upper end) to a portion of terminal 41 via a through hole, and at the other end (lower end) protrudes from the lower surface (other side) of the interposer layer 30.

[0042] The portion of bump 70 that protrudes from the intermediary layer 30 is roughly spherical (ball-shaped).

[0043] The bump 70 is constructed using solder materials such as solder, silver solder, copper solder, or phosphor bronze solder as the main material.

[0044] Furthermore, a terminal 41 is formed on the interposer layer 30. The terminal 21 of the semiconductor chip 20 is electrically connected to the terminal 41 via the connection portion 81.

[0045] In addition, in this embodiment, such as Figure 1 As shown, terminal 21 has a structure that protrudes from the side of the semiconductor chip 20, and terminal 41 also has a structure that protrudes from the interposer layer 30.

[0046] Furthermore, a bottom filler material composed of various resin materials is filled into the gap between the semiconductor chip 20 and the interposer 30, and a sealing layer 80 is formed by the curing of this bottom filler material. This sealing layer 80 has the functions of improving the bonding strength between the semiconductor chip 20 and the interposer 30 and preventing foreign objects from entering the gap or moisture from seeping into the gap.

[0047] Furthermore, a molding portion 17 is formed on the upper side of the interposer 30 to cover the semiconductor chip 20 and the interposer 30. The molding portion 17 is composed of a cured semiconductor sealing material (sealing material). Thus, the semiconductor chip 20 is sealed inside the semiconductor device 10 to prevent foreign objects from entering the semiconductor chip 20 or moisture from seeping into the semiconductor chip 20.

[0048] like Figure 1 As shown, the semiconductor chip 20 (semiconductor element) has a semiconductor chip body portion 23 (semiconductor element body portion) and terminals 21 protruding from the lower surface of the semiconductor chip body portion 23. The semiconductor chip body portion 23 has circuits (not shown) formed on its upper surface and is mainly composed of semiconductor materials such as Si, SiC, GaN, GaAs, or Ga2O3.

[0049] The semiconductor device 10 and semiconductor chip 20 with such a structure are manufactured, for example, by using a semiconductor device manufacturing method using adhesive tape, in the following manner.

[0050] <Methods for Manufacturing Semiconductor Devices>

[0051] Figures 2 to 4 This is for illustrating the manufacture using the adhesive tape of the present invention. Figure 1 A longitudinal cross-sectional view of the method for the semiconductor device shown. Figure 5 It is an enlarged representation located by Figure 2 The image shows an enlarged cross-sectional view of a semiconductor chip formed by cutting a semiconductor substrate along its thickness direction using laser irradiation within the area [A] enclosed by the dotted lines. Furthermore, in the following description, [the text will be incomplete and requires further context]. Figures 2-5 The upper side is referred to as "upper" and the lower side as "lower". Furthermore, the dimensions in the various figures referenced in this specification are exaggerated in the left-right direction and / or thickness direction, and are quite different from the actual dimensions.

[0052] [1A] First, an adhesive tape 100 (cut tape) composed of a laminate is prepared, the laminate having a substrate 4 and an adhesive layer 2 laminated on the upper surface of the substrate 4. Next, as... Figure 2 As shown in (a), the semiconductor substrate 7 (semiconductor wafer) is placed on the adhesive layer 2 at a position corresponding to its center 122 and then gently pressed. As a result, the semiconductor substrate 7 is laminated (attached) to the adhesive tape 100.

[0053] The circuitry of the semiconductor chip 20, formed by monolithization, is pre-formed on the semiconductor substrate 7. A plurality of these circuits are formed on the semiconductor substrate 7 in a lattice arrangement with the semiconductor chips 20. Therefore, when viewed from above, the semiconductor substrate 7 is cut into a lattice shape to make each circuit independent, thereby obtaining a monolithized semiconductor chip 20. Furthermore, the lines through which the semiconductor substrate 7 is cut into a lattice shape are called predetermined cutting lines. Therefore, regarding these predetermined cutting lines, in the semiconductor substrate 7, corresponding to the circuitry of the lattice-arranged semiconductor chips 20, a plurality of these predetermined cutting lines are formed in a lattice (matrix) shape along both the longitudinal and transverse directions of the semiconductor substrate 7 when viewed from above.

[0054] [2A] Next, as Figure 2 As shown in (b), an adhesive tape 100 on which a semiconductor substrate 7 is stacked is placed on a dicer table 250.

[0055] [3A] Next, the outer periphery 121 of the adhesive layer 2 is fixed with the wafer ring 9. Thereafter, the semiconductor substrate 7, serving as the substrate, is cut (divided) along the thickness direction by irradiation with a laser 151 based on a light irradiator 150 (see reference). Figure 2 (c) Furthermore, along the predetermined cutting line of the semiconductor substrate 7, the semiconductor substrate 7 is cut in the thickness direction based on the irradiation of the laser 151 in a grid-like manner.

[0056] Thus, the semiconductor substrate 7 is monolithically formed corresponding to the position where the semiconductor chip 20 is formed. As a result, as... Figure 2 As shown in (d), a plurality of monolithized semiconductor chips 20 are formed as components in a state where they are bonded to the adhesive layer 2 on the adhesive tape 100 (monolithization process).

[0057] At this time, the adhesive tape 100 has a buffering effect to prevent cracking, breakage, etc. when cutting the semiconductor substrate 7.

[0058] Furthermore, the cutting of the semiconductor substrate 7 based on the irradiation of the laser 151 using the light irradiator 150 is carried out in such a way that the focal point of the laser 151, which has a wavelength that absorbs the semiconductor substrate 7, is focused on the upper part of the semiconductor substrate 7 or in the middle of the thickness direction of the semiconductor substrate 7. Moreover, it is preferable to move this focal point from the upper surface side of the semiconductor substrate 7 toward the lower surface side. As a result, it is possible to reliably implement the monolithic fabrication of the semiconductor substrate 7.

[0059] Furthermore, the laser 151 irradiated by the light irradiator 150 is not particularly limited as long as it can cut the semiconductor substrate 7 along the thickness direction by irradiating the semiconductor substrate 7. For example, Figure 5As shown, laser 151 is preferably a pulsed laser beam. If laser 151 is a pulsed laser beam, it is possible to reliably suppress or prevent debris from adhering to the edge of the semiconductor chip 20 formed by cutting the semiconductor substrate 7 along the thickness direction.

[0060] Furthermore, in this specification, cutting of the semiconductor substrate 7 based on laser 151 irradiation refers to the case where the semiconductor substrate 7 is cut by being heated and melted at the focal point of laser 151. Additionally, for example, the following process can also be referred to as cutting: Cutting is also referred to as the case where a modified layer (modified region) is formed in the semiconductor substrate 7 due to cracking or a change in refractive index at the focal point of laser 151, and the semiconductor substrate 7 is cut by fracturing in the modified layer when an external force is applied to it.

[0061] Thus, in this process [3A], with the semiconductor substrate 7 laminated on the adhesive tape 100, the laser 151 irradiates the semiconductor substrate 7, thereby cutting (cutting) the semiconductor substrate 7 along the thickness direction, thereby obtaining a semiconductor chip 20 monolithically formed from the semiconductor substrate 7. By using the adhesive tape 100, breakage in the adhesive tape 100 caused by this process [3A] can be reliably suppressed or prevented. Furthermore, the expansion of the adhesive tape 100 in the subsequent process [5A] and the picking up of the semiconductor chip 20 in the subsequent process [6A] can be performed with excellent precision. This will be described in detail later.

[0062] [4A] Next, as Figure 3 As shown in (a), an adhesive tape 100, on which a monolithized semiconductor chip 20 is laminated (attached), is placed on a pickup platform 200 with the outer periphery 121 of the adhesive layer 2 fixed by a wafer ring 9. Thereafter, energy rays are irradiated onto the adhesive layer 2 via a substrate 4, thereby reducing the adhesive force of the adhesive layer 2 on the semiconductor chip 20.

[0063] Furthermore, energy rays can be used, for example, ultraviolet light, electron beams, ion beams, or combinations of two or more of these energy rays. Among these, ultraviolet light is particularly preferred. Ultraviolet light can efficiently reduce the adhesion of the adhesive layer 2 to the semiconductor chip 20.

[0064] Furthermore, regarding the reduction in adhesion to the semiconductor chip 20 based on the irradiation of the adhesive layer 2 by energy rays, in addition to the case where it is performed before the expansion process as in this step [5A], it can also be performed after the expansion process. Moreover, irradiation by energy rays is one example of a method of imparting energy, and other methods can also be used to impart energy.

[0065] [5A] Next, on the pick-up platform 200, while maintaining the wafer ring 9 fixed in the outer periphery 121 of the adhesive layer 2, the center portion 210 of the pick-up platform 200 is pushed upward relative to the outer periphery 220. As a result, the adhesive tape 100 elongates (expands) radially along its surface direction. Thus, a gap 25 with a certain interval is formed between the monolithized semiconductor chips 20 (see reference). Figure 3 (b).

[0066] [6A] Next, with the gap 25 formed by the process described in [5A], the semiconductor chip 20 is picked up by adsorption based on a vacuum collet or air tweezers (picking up process; see reference). Figure 3 (c).

[0067] The semiconductor chip 20 can be picked up in the following manner. After the adhesive tape 100 is stretched into a radial shape in the process [5A], a needle (not shown) provided on the pick-up platform 200 protrudes from the pick-up platform 200 along the thickness direction. As a result, the semiconductor chip 20 attached to the adhesive tape 100 is pushed up using the needle, thereby, as Figure 3 As shown in (c), the semiconductor chip 20 is picked up in a state where it can be easily peeled off from the adhesive tape 100. In other words, the adhesive tape 100 is extended along the surface direction, and the semiconductor chip 20 (component) is pulled out from the opposite side of the substrate 4 while being pushed up from the substrate 4 side, thereby enabling the semiconductor chip 20 to detach from the adhesive layer 2.

[0068] By going through the processes [1A] to [6A] as described above, the semiconductor chip 20, which is monolithically formed from the semiconductor substrate 7, is separated using adhesive tape 100.

[0069] [7A] Next, the picked-up semiconductor chip 20 is transferred from the vacuum nozzle or vacuum pen to a mounting probe, etc. Thereafter, as... Figure 4 As shown in (a), the terminals 21 of the semiconductor chip 20 and the terminals 41 of the interposer 30 are aligned with each other via solder bumps 85 provided on the terminals 41, and the semiconductor chip 20 is placed on the interposer 30. That is, the surface on which the terminals 21 of the semiconductor chip 20 are formed is set to the lower side, and the semiconductor chip 20 (semiconductor element) is placed on the interposer 30 (substrate).

[0070] [8A] Next, as Figure 4 As shown in (b), the solder bump 85 between the terminal 21 and the terminal 41 is heated while the interlayer 30 is brought close to the semiconductor chip 20.

[0071] Thus, the molten solder bump 85 comes into contact with both terminal 21 and terminal 41, and is cooled in this state, thereby forming a connection portion 81. As a result, terminal 21 and terminal 41 are electrically connected via the connection portion 81 (see reference). Figure 4 (c).

[0072] [9A] Next, a bottom filler material (sealing material) made of various resin materials is filled into the gap formed between the semiconductor chip 20 and the interposer 30. Thereafter, by curing the bottom filler material, a sealing layer 80 composed of the cured bottom filler material is formed (see reference). Figure 4 (d).

[0073] [10A] Next, a molding portion 17 (sealing portion) is formed on the upper side of the interposer 30 to cover the semiconductor chip 20 and the interposer 30. Thus, the semiconductor chip 20 is sealed by the interposer 30 and the molding portion 17. In addition, a bump 70 is formed in a manner that protrudes from the lower side of the interposer 30 and electrically connects to a portion of the terminal 41 via a through-hole provided in the interposer 30 (see reference). Figure 4 (e).

[0074] Here, sealing based on the molding portion 17 can be implemented, for example, as follows. First, a molding die is prepared, which has an internal space corresponding to the shape of the molding portion 17 to be formed. A powdered semiconductor sealing material is filled into the internal space to cover the semiconductor chip 20 and the interposer layer 30 disposed within the internal space. Then, in this state, the semiconductor sealing material is cured by heating, and the cured semiconductor sealing material is obtained. Thus, sealing based on the molding portion 17 is performed.

[0075] A semiconductor device 10 is obtained by a method for manufacturing a semiconductor device having the processes described above. More specifically, after performing the processes [1A] to [10A], by repeating the processes [6A] to [10A], a plurality of semiconductor devices 10 can be manufactured at once from a single semiconductor substrate 7.

[0076] This invention applies to the adhesive tape 100 (cutting tape) used in the semiconductor device manufacturing method described above. The adhesive tape 100 will be described below.

[0077] <Adhesive Tape 100>

[0078] Figure 6 This is a longitudinal sectional view showing an embodiment of the adhesive tape of the present invention. Furthermore, in the following description, [the following will be...]. Figure 6 The upper side is referred to as "upper" and the lower side as "lower". Furthermore, the dimensions in the various figures referenced in this specification are exaggerated in the left-right direction and / or thickness direction, and are quite different from the actual dimensions.

[0079] In the aforementioned method for manufacturing the semiconductor chip 20, when conventional adhesive tape is used instead of adhesive tape 100, the following problem exists. Specifically, in step [3A], when the semiconductor substrate 7 is cut along the thickness direction by irradiating the semiconductor substrate 7 with laser 151 to obtain the semiconductor chip 20 monolithically formed from the semiconductor substrate 7, breakage occurs in the conventional adhesive tape. Therefore, the following problem exists: in the extension of the conventional adhesive tape in step [5A], which is a subsequent step of step [3A], and in the picking up of the semiconductor chip 20 in step [6A], the semiconductor chip 20 cannot be positioned in the pre-designed position, resulting in the inability to pick up the semiconductor chip 20 with excellent precision.

[0080] Here, in the process [3A], when the semiconductor substrate 7 is cut along the thickness direction by irradiating it with laser 151, the focal point of the laser 151 irradiating the semiconductor substrate 7 is concentrated at the upper part of the semiconductor substrate 7 or at the middle of the thickness direction of the semiconductor substrate 7, thereby cutting the semiconductor substrate 7 along the thickness direction. At this time, because the focal point of laser 151 is close to the separation distance of the conventional adhesive tape, an unintentional breakage occurs in the conventional adhesive tape.

[0081] In contrast, in this invention, the substrate 4 included in the adhesive tape 100 (the adhesive tape of this invention) uses a substrate whose weight reduction rate from room temperature (25°C) to 420°C is less than 50% on the TG curve of the substrate 4 obtained by simultaneous differential thermal and thermogravimetric measurements according to JIS K 0129.

[0082] Thus, by selecting a substrate with a weight reduction rate of 50% or less as substrate 4, even in the process [3A], when laser 151 is irradiated onto semiconductor substrate 7 to cut it along the thickness direction, and the focal point of laser 151 is concentrated in the middle of the thickness direction of semiconductor substrate 7, the breakage in the adhesive layer 2 of adhesive tape 100 can be stopped, thereby reliably suppressing or preventing the occurrence of breakage in substrate 4 (see reference). Figure 5 Furthermore, even when the focal point of the laser 151 is focused on the upper part of a thin semiconductor substrate 7 (e.g., a semiconductor substrate 7 having a thickness of less than 100 μm), it is possible to reliably suppress or prevent the generation of fractures in the substrate 4.

[0083] Therefore, in the expansion of the adhesive tape 100 in the process [5A], which is a subsequent process of the process [3A], and in the picking up of the semiconductor chip 20 in the process [6A], the semiconductor chip 20 can be reliably positioned in the pre-designed location, and thus the picking up of the semiconductor chip 20 can be performed with excellent precision.

[0084] The adhesive tape 100, to which the present invention is applied as described above, is composed of a laminate comprising a sheet-like substrate 4 containing resin material and an adhesive layer 2 laminated on the upper surface (one side) of the substrate 4. Hereinafter, the substrate 4 and the adhesive layer 2 will be described.

[0085] Furthermore, the adhesive tape 100 has the following function: by applying energy to the adhesive layer 2 of the adhesive tape 100, the adhesion to the semiconductor substrate 7 and the semiconductor chip 20 on the adhesive layer 2 is reduced. Examples of methods for applying energy to the adhesive layer 2 include irradiating the adhesive layer 2 with energy rays and heating the adhesive layer 2. Since the semiconductor chip 20 does not need to undergo unnecessary thermal processes, the method of irradiating the adhesive layer 2 with energy rays is preferred. Therefore, the following description will focus on a structure where the adhesion is reduced by irradiation with energy rays as an example of the adhesive layer 2.

[0086] <Substrate 4>

[0087] The substrate 4 is mainly composed of resin material and is sheet-like, serving to support the adhesive layer 2 disposed on the substrate 4. Furthermore, the substrate 4 is configured to achieve elongation of the adhesive tape 100 in the surface direction during the process [5A].

[0088] Furthermore, as previously stated, in this invention, regarding the substrate 4, the weight reduction rate from room temperature (25°C) to 420°C on the TG curve obtained by simultaneous differential thermal and thermogravimetric measurements according to JIS K 0129 is less than 50%. Therefore, even in the process described [3A], where the laser 151 is focused at the midpoint of the thickness direction of the semiconductor substrate 7 for the purpose of cutting the semiconductor substrate 7, the occurrence of breakage in the substrate 4 or even the adhesive tape 100 can be reliably suppressed or prevented. Furthermore, even when the laser 151 is focused at the upper part of the thin semiconductor substrate 7, the occurrence of breakage in the substrate 4 or even the adhesive tape 100 can be reliably suppressed or prevented.

[0089] For example, the following resin materials can be used: polyolefin resins, polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polybutylene naphthalate, and other polyester resins (ester polymers); polyvinyl chloride resins, polyurethane, polyimide, polyamide, polyetheretherketone, polyethersulfone, polystyrene, fluoropolymers, silicone resins, cellulose resins, styrene-based thermoplastic elastomers (styrene polymers), acrylic resins, polyester-based thermoplastic elastomers, polyisoprene, polycarbonate (carbonate polymers), and other thermoplastic resins, as well as mixtures of these thermoplastic resins. Therefore, it is relatively easy to set the weight reduction rate of the substrate 4 to 50% or less.

[0090] These resin materials are capable of transmitting light (visible light, near-infrared light, ultraviolet light), X-rays, electron beams, and other energy rays. Therefore, they are preferably used when energy rays pass through the substrate 4 and irradiate the adhesive layer 2. Thus, by irradiating the adhesive layer 2 with energy rays from the substrate 4 side, the adhesiveness of the adhesive layer 2 can be reduced, making it easier to pick up the semiconductor chip 20. Furthermore, the weight reduction rate of the substrate 4 can be relatively easily set to 50% or less.

[0091] In particular, polyolefin resins are preferred as the resin material. By using polyolefin resins, it is possible to reliably impart elongation (expansion) to the substrate 4 during the stretching process, and it is easier to set the weight reduction rate of the substrate 4 to 50% or less.

[0092] There are no particular limitations on the type of polyolefin resin, but examples include polyethylene resins such as linear low-density polyethylene, low-density polyethylene, and ultra-low-density polyethylene; ethylene copolymers such as ethylene-vinyl acetate copolymer (EVA), ethylene-methyl methacrylate copolymer (EMMA), ethylene-methyl methacrylate copolymer (EMAA), or ethylene copolymers such as zinc ion crosslinkers, sodium ion crosslinkers, or potassium ion crosslinkers; one or more of these resins can be used in combination.

[0093] Furthermore, the polyolefin resin, especially the polyethylene resin, preferably mainly comprises a component with a specific gravity of 0.94 or less, and more preferably comprises a component with a specific gravity of 0.92 or less. This ensures that the weight reduction rate of the substrate 4 can be reliably set to 50% or less. Additionally, "mainly" means that the component satisfying the above-mentioned specific gravity range has a weight fraction of more than 50% in the polyolefin resin (polyethylene resin).

[0094] Furthermore, the polyolefin resin (especially the polyethylene resin) can be a mixture (blend) of a low-specific-gravity component with a relatively low specific gravity and a high-specific-gravity component with a higher specific gravity than the low-specific-gravity component. This results in a substrate 4 that can more reliably suppress or prevent breakage in the adhesive tape 100. Additionally, it is preferable that the weight percentage of the low-specific-gravity component is higher than the weight percentage of the high-specific-gravity component. Specifically, the weight percentage of the low-specific-gravity component in the polyolefin resin (polyethylene resin) is preferably 55% or more and 90% or less, more preferably 60% or more and 80% or less. This results in a substrate 4 that can particularly reliably suppress or prevent breakage in the adhesive tape 100.

[0095] Furthermore, the specific gravity of the low-specific-gravity component is preferably within the above-mentioned range (preferably 0.94 or less, more preferably 0.92 or less). Moreover, from the viewpoint of effectively improving the properties of the substrate 4, the specific gravity difference between the low-specific-gravity component and the high-specific-gravity component is preferably 0.10 or more, more preferably 0.15 or more and 0.50 or less.

[0096] Furthermore, the substrate 4 preferably contains a conductive material that is conductive. By including such a conductive material, the conductive material functions as an antistatic agent, and when the semiconductor substrate 7 is cut in the process [3A], the generation of static electricity in the semiconductor chip 20 formed by cutting the semiconductor substrate 7 can be reliably suppressed or prevented.

[0097] There are no particular limitations on the conductive material, as long as it is a conductive material. Examples of conductive materials include surfactants, permanent antistatic polymers (IDPs), metallic materials, metal oxide materials, and carbon-based materials, and one or more of these materials can be used in combination.

[0098] Among these, examples of surfactants include anionic surfactants, cationic surfactants, nonionic surfactants, and zwitterionic surfactants.

[0099] As a permanent antistatic polymer (IDP), all IDPs can be used, such as polyether and polyolefin block polymer series, polyesteramide series, polyesteramide, polyether ester amide, polyurethane series, etc.

[0100] Furthermore, as metallic materials, examples include gold, silver, copper or silver-plated copper, nickel, etc., and these metallic powders are preferred.

[0101] Examples of metal oxide materials include indium tin oxide (ITO), indium oxide (IO), antimony tin oxide (ATO), indium zinc oxide (IZO), tin oxide (SnO2), and zinc oxide (ZnO), with these metal oxide powders being preferred.

[0102] Furthermore, as carbon-based materials, examples include carbon nanotubes such as carbon black, single-layer carbon nanotubes, and multi-layer carbon nanotubes; carbon nanofibers, CN nanotubes, CN nanofibers, BCN nanotubes, BCN nanofibers, and graphene.

[0103] Among these, at least one of permanent antistatic polymer (IDP), metal oxide materials, and carbon black is preferred as the conductive material. Because these materials have low humidity dependence on resistivity, the change in surface resistivity can be reduced even when the semiconductor substrate 7 is exposed to a dry environment.

[0104] Furthermore, at this time, the surface resistivity of the upper surface (one side) of the substrate 4 is preferably set to exceed 1.0 × 10⁻⁶. 8 (Ω / □), more preferably set to more than 1.0 × 10 8 (Ω / □) and 1.0×10 16 (Ω / □) or less, and its volume resistivity is preferably set to 1.0 × 10⁻⁶. 16 (Ω·m) or less, more preferably set to 1.0 × 10 11 (Ω·m) or more and 1.0×10 13 (Ω·m) or less. By setting the surface resistivity and volume resistivity of the upper surface (one side) of the substrate 4 as described above, the conductive material contained in the substrate 4 preferably functions as an antistatic agent, and can more reliably suppress or prevent the generation of static electricity in the semiconductor substrate 7 and the semiconductor chip 20 during the cutting of the semiconductor substrate 7 in the process [3A], the expansion of the adhesive tape 100 in the process [5A], and the picking up of the semiconductor chip 20 in the process [6A].

[0105] Furthermore, the substrate 4 may contain softeners such as mineral oil, fillers such as calcium carbonate, silica, talc, mica, and clay, antioxidants, light stabilizers, lubricants, dispersants, neutralizers, colorants, etc.

[0106] The thickness of the substrate 4 is preferably 30 μm or more and 300 μm or less, more preferably 50 μm or more and 250 μm or less. If the thickness of the substrate 4 is within this range, it can more reliably perform its function as the substrate 4, reliably suppress or prevent breakage in the substrate 4 when cutting the semiconductor substrate 7 based on laser 151 irradiation in the process [3A], and enable the expansion (elongation) of the adhesive tape 100 in the process [5A] and the picking up of the semiconductor chip 20 in the process [6A] with excellent workability.

[0107] In addition, the substrate 4 may expose functional groups, such as carboxyl, hydroxyl, and amino groups, that are reactive with the constituent materials contained in the adhesive layer 2 on its surface.

[0108] Furthermore, the substrate 4 can be composed of a laminate (multilayer body) consisting of multiple layers made of different resin materials. Alternatively, it can be composed of a blend film formed by dry mixing the resin materials.

[0109] Here, as mentioned above, the weight reduction rate of the substrate 4 is 50% or less, but preferably 45% or less, and more preferably 40% or less. This allows for more reliable suppression or prevention of breakage in the substrate 4 and even the adhesive tape 100 caused by irradiation of the semiconductor substrate 7 by the laser 151 in the aforementioned process [3A].

[0110] On the other hand, the lower limit of the aforementioned weight reduction rate (weight reduction rate from room temperature to 420°C) may not be set, but when considering the balance with other properties in the substrate 4, it is preferably set to 15% or more, and more preferably 20% or more. Thus, by imparting appropriate softness to the substrate 4, it is possible to more reliably suppress or prevent the occurrence of breakage in the substrate 4 during cutting, expansion, and picking.

[0111] Furthermore, in substrate 4, the weight reduction rate from room temperature (25°C) to 450°C on the TG curve obtained by simultaneous differential thermal and thermogravimetric measurements according to JIS K 0129 is higher than the aforementioned weight reduction rate from room temperature to 420°C. In this case, the upper limit of the aforementioned weight reduction rate (weight reduction rate from room temperature to 450°C) is preferably 95% or less, more preferably 90% or less, and even more preferably 80% or less. As a result, it is possible to further and reliably suppress or prevent the occurrence of breakage in substrate 4 or even adhesive tape 100 based on the irradiation of the semiconductor substrate 7 by laser 151 in the aforementioned process [3A].

[0112] On the other hand, the lower limit of the aforementioned weight reduction rate (weight reduction rate from room temperature to 450°C) may not be set, but when considering the balance with other properties in the substrate 4, it is preferably set to more than 50%, and more preferably to more than 55%. Thus, by imparting appropriate softness to the substrate 4, it is possible to more reliably suppress or prevent the occurrence of breakage in the substrate 4 during cutting, expansion, and picking.

[0113] Furthermore, in substrate 4, the weight reduction rate from room temperature (25°C) to 400°C on the TG curve obtained by simultaneous differential thermal and thermogravimetric measurements according to JIS K 0129 is lower than the aforementioned weight reduction rate from room temperature to 420°C. In this case, the upper limit of the aforementioned weight reduction rate (weight reduction rate from room temperature to 400°C) is preferably 25% or less, more preferably 20% or less, and even more preferably 15% or less. As a result, it is possible to further and reliably suppress or prevent the occurrence of breakage in substrate 4 or even adhesive tape 100 based on the irradiation of the semiconductor substrate 7 by laser 151 in the aforementioned process [3A]. Furthermore, it is possible to impart good heat resistance to substrate 4.

[0114] On the other hand, the lower limit of the aforementioned weight reduction rate (weight reduction rate from room temperature to 400°C) may not be set, but when considering the balance with other properties in the substrate 4, it is preferably set to 3% or more, and more preferably to 5% or more. Thus, by imparting appropriate softness to the substrate 4, it is possible to more reliably suppress or prevent the occurrence of breakage in the substrate 4 during cutting, expansion, and picking.

[0115] Furthermore, the tensile modulus of elasticity of the substrate 4 at 23°C is preferably 200 MPa or less, more preferably 40 MPa or more and 150 MPa or less, and even more preferably 50 MPa or more and 130 MPa or less. Thus, due to its excellent workability, the expansion (elongation) of the adhesive tape 100 in the aforementioned process [5A] can be performed, and subsequently, the picking up of the semiconductor chip 20 in the aforementioned process [6A] performed after this expansion can be performed.

[0116] Furthermore, the substrate 4 can be a structure irradiated by an electron beam. In this case, the substrate 4 is preferably irradiated by an electron beam at an absorption linearity of 20–300 kGy. Furthermore, the accelerating voltage for electron beam irradiation is preferably 100–300 kV.

[0117] By irradiating the substrate 4 with an electron beam, it is possible to further and reliably suppress or prevent breakage of the substrate 4 or even the adhesive tape 100 based on the irradiation of the semiconductor substrate 7 by the laser 151 in the process [3A].

[0118] <Adhesive Layer 2>

[0119] The adhesive layer 2 functions to bond and support the semiconductor substrate 7 during the cutting process [3A]. Furthermore, the adhesive layer 2 is configured to reduce adhesion to the semiconductor chip 20 by applying energy to it during the process [4A]. This results in a state where the semiconductor chip 20, obtained by monolithizing the semiconductor substrate 7, can be easily peeled off from the adhesive layer 2. Consequently, the adhesive layer 2 can exert an adhesive force sufficient to allow the semiconductor chip 20 to be picked up during the process [6A].

[0120] The adhesive layer 2 with this function is composed of a resin composition containing (1) an adhesive base resin and (2) a curable resin that cures the adhesive layer 2 as the main materials. Hereinafter, each component contained in the resin composition will be described in turn.

[0121] (1) Base resin

[0122] The base resin has adhesive properties and is included in the resin composition in order to impart adhesive properties to the semiconductor substrate 7 and even the semiconductor chip 20 before the adhesive layer 2 is irradiated with energy rays.

[0123] Examples of known resins used as base resins include acrylic resins (adhesives), silicone resins (adhesives), polyester resins (adhesives), polyvinyl acetate resins (adhesives), polyvinyl ether resins (adhesives), styrene elastomer resins (adhesives), polyisoprene resins (adhesives), polyisobutylene resins (adhesives), and urethane resins (adhesives). Among these, acrylic resins are preferred. Acrylic resins have excellent heat resistance and are relatively easy and inexpensive to obtain, therefore they are preferred as base resins.

[0124] Acrylic resins refer to resins that use polymers (homopolymers or copolymers) with (meth)acrylate as the main monomer as the base polymer.

[0125] As for (meth)acrylates, there are no particular limitations; examples include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, butyl methacrylate, butyl tertiary (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, nonyl (meth)acrylate, isononyl (meth)acrylate, and so on. Alkyl methacrylates such as decyl methacrylate, isodecyl methacrylate, undecyl methacrylate, dodecyl methacrylate, tridecyl methacrylate, tetradecyl methacrylate, pentadecyl methacrylate, hexadecyl methacrylate, heptadecanyl methacrylate, and octadecyl methacrylate; cyclohexyl methacrylate; and aryl methacrylates such as phenyl methacrylate can be used in combination, with one or more of these esters preferred. Among these, alkyl methacrylates such as methyl methacrylate, ethyl methacrylate, butyl methacrylate, 2-ethylhexyl methacrylate, and octyl methacrylate are preferred. Alkyl methacrylates exhibit particularly excellent heat resistance and are relatively easy and inexpensive to obtain.

[0126] In addition, in this specification, (meth)acrylate is used in the sense of including both acrylate and methacrylate.

[0127] Acrylic resins are composed of monomeric components, including copolymeric monomers, which are used as monomeric components to modify polymers for purposes such as improving cohesiveness and heat resistance.

[0128] While not specifically limited, examples of copolymerizable monomers include: hydroxyl-containing monomers such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, and 6-hydroxyhexyl (meth)acrylate; epoxy-containing monomers such as glycidyl (meth)acrylate; carboxyl-containing monomers such as (meth)acrylic acid, itaconic acid, maleic acid, fumaric acid, crotonic acid, and isocrotonic acid; anhydride-containing monomers such as maleic anhydride and itaconic anhydride; amide monomers such as (meth)acrylamide, N,N-dimethyl (meth)acrylamide, N-butyl (meth)acrylamide, N-hydroxymethyl (meth)acrylamide, N-hydroxymethylpropane (meth)acrylamide, N-methoxymethyl (meth)acrylamide, and N-butoxymethyl (meth)acrylamide; and amide monomers such as aminoethyl (meth)acrylate, N,N-dimethylaminoethyl (meth)acrylate, and tert-butylaminoethyl (meth)acrylate. Amino monomers; cyano-containing monomers such as (meth)acrylonitrile; olefinic monomers such as ethylene, propylene, isoprene, butadiene, and isobutylene; styrene-based monomers such as styrene, α-methylstyrene, and vinyltoluene; vinyl ester monomers such as vinyl acetate and vinyl propionate; vinyl ether monomers such as methyl vinyl ether and ethyl vinyl ether; halogen-containing monomers such as vinyl chloride and vinylidene chloride; alkoxy-containing monomers such as methoxyethyl (meth)acrylate and ethoxyethyl (meth)acrylate; monomers with nitrogen-containing rings such as N-vinyl-2-pyrrolidone, N-methylvinylpyrrolidone, N-vinylpyridine, N-vinylpiperidone, N-vinylpyrimidine, N-vinylpiperazine, N-vinylpyrazine, N-vinylpyrrole, N-vinylimidazolium, N-vinyloxazole, N-vinylmorpholine, N-vinylcaprolactam, and N-(meth)acryloylmorpholine, etc., and one or more of these monomers can be used in combination.

[0129] The content of these copolymer monomers relative to all monomer components constituting the acrylic resin is preferably 40% by weight or less, more preferably 10% by weight or less.

[0130] Furthermore, the comonomer can be contained at the end of the main chain of the polymer constituting the acrylic resin, or it can be contained in the main chain, or it can be contained in both the end of the main chain and the main chain.

[0131] Furthermore, for the purpose of cross-linking polymers, the comonomer may contain polyfunctional monomers.

[0132] Examples of multifunctional monomers include: 1,6-hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, glycerol di(meth)acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, urethane (meth)acrylate, divinylbenzene, butyl di(meth)acrylate, hexyl di(meth)acrylate, etc., and one or more of these monomers can be used in combination.

[0133] Furthermore, ethylene-vinyl acetate copolymers and vinyl acetate polymers can also be used as comonomer components.

[0134] Furthermore, the glass transition point of this acrylic resin is preferably below 20°C. Therefore, the adhesive layer 2 can exhibit excellent adhesion before being irradiated with energy rays.

[0135] Furthermore, such acrylic resins (polymers) can be generated by polymerizing a single monomer component or a mixture of two or more monomer components. Moreover, the polymerization of these monomer components can be carried out using polymerization methods such as solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization.

[0136] Furthermore, the acrylic resin is preferably a reactive functional group (such as a hydroxyl or carboxyl group, especially a hydroxyl group) that is reactive to the crosslinking agent or photopolymerization initiator. Therefore, since the crosslinking agent or photopolymerization initiator is linked to the acrylic resin as a polymer component, leakage of these crosslinking agents or photopolymerization initiators from the adhesive layer 2 can be reliably suppressed or prevented. As a result, when irradiated with energy rays in the aforementioned process [4A], the adhesion of the adhesive layer 2 to the semiconductor substrate 7 and even the semiconductor chip 20 is reliably reduced.

[0137] (2) Curing resin

[0138] The curable resin, for example, possesses curability that allows it to be cured by irradiation with energy rays. Through this curing, the base resin is incorporated into the cross-linked structure of the curable resin, resulting in a reduction in the adhesive strength of the adhesive layer 2.

[0139] As such a curable resin, for example, a low molecular weight compound is used, which contains at least two polymeric carbon-carbon double bonds as functional groups that can be three-dimensionally cross-linked by irradiation with energy rays such as ultraviolet light or electron beams.

[0140] Specifically, examples of such curable resins include: trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, 1,4-butanediol di(meth)acrylate, polyethylene glycol di(meth)acrylate, glycerol di(meth)acrylate, etc., esterifications of (meth)acrylic acid and polyols; ester acrylate oligomers; cyanurate compounds containing carbon-carbon double bonds, such as 2-propenyl-di-3-butenyl cyanurate; tri(2-acryloyloxyethyl)isocyanurate; tri(2-... Isocyanurate compounds containing carbon-carbon double bonds, such as 1,3-diacryloyloxy-2-propyl-oxycarbonylamino-n-hexyl) isocyanurate, 2-hydroxyethyl bis(2-acryloyloxyethyl) isocyanurate, bis(2-acryloyloxyethyl)2-[(5-acryloyloxyhexyl)-oxy]ethyl isocyanurate, tris(1,3-diacryloyloxy-2-propyl-oxycarbonylamino-n-hexyl) isocyanurate, tris(1-acryloyloxyethyl-3-methacryloyloxy-2-propyl-oxycarbonylamino-n-hexyl) isocyanurate, tris(4-acryloyloxy-n-butyl) isocyanurate; commercially available low-polyester acrylates, bisphenol F epoxy acrylates, bisphenol A epoxy acrylates, etc.; urethane acrylates, polyester acrylates, aromatic urethane acrylates, aliphatic urethane acrylates, etc., can be used in combination with one or more of these compounds. Among these, it is preferred to contain at least one of epoxy acrylate, urethane acrylate and polyester acrylate, and more preferably urethane acrylate.

[0141] Furthermore, there are no particular limitations on urethane acrylates. For example, a polyol compound such as a polyester or polyether type can be reacted with a polyisocyanate compound (such as 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-xylene diisocyanate, 1,4-xylene diisocyanate, 4,4'-diphenylmethane diisocyanate, etc.) to obtain an isocyanate-terminated urethane prepolymer, which can then be reacted with a hydroxyl-containing (meth)acrylate (such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, polyethylene glycol (meth)acrylate, etc.) to obtain the urethane prepolymer.

[0142] Furthermore, examples of polyester acrylates include, for instance, polyester (meth)acrylates.

[0143] Furthermore, the curable resin is not particularly limited, but it can be a mixture of two or more curable resins with different weight-average molecular weights. Using such a curable resin allows for easy control of the degree of crosslinking of the resin based on energy beam irradiation, and makes it easier to pick up the semiconductor chip 20 from the adhesive layer 2. Moreover, as such a curable resin, for example, a mixture of a first curable resin and a second curable resin with a larger weight-average molecular weight than the first curable resin can be used.

[0144] The curable resin is preferably blended at a ratio of 5 parts by weight or more and 100 parts by weight or less relative to 100 parts by weight of the base resin, more preferably at a ratio of 10 parts by weight or more and 100 parts by weight or less, and even more preferably at a ratio of 20 parts by weight or more and 100 parts by weight or less. As described above, by adjusting the blending amount of the curable resin, the semiconductor chip 20 can be easily picked up from the adhesive layer 2.

[0145] Furthermore, regarding the curable resin, if a double-bond-directed acrylic resin is used as the aforementioned base resin—that is, if an acrylic resin having carbon-carbon double bonds in the side chain, main chain, or at the end of the main chain is used—the addition to the resin composition can be omitted. This is because when the acrylic resin is a double-bond-directed acrylic resin, the adhesive layer 2 cures through the function of the carbon-carbon double bonds possessed by the double-bond-directed acrylic resin when irradiated with energy rays, thereby reducing the adhesive strength of the adhesive layer 2.

[0146] (3) Photopolymerization initiator

[0147] Furthermore, the adhesive layer 2 is configured to reduce the adhesion to the semiconductor substrate 7 or even the semiconductor chip 20 by irradiation with energy rays. However, when using ultraviolet light or the like as energy rays, it is preferable to contain a photopolymerization initiator in the curable resin in order to facilitate the polymerization of the curable resin.

[0148] Examples of photopolymerization initiators include: 2,2-dimethoxy-1,2-diphenylethane-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propane-1-one, 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropanoyl)benzyl]phenyl}-2-methyl-1-propane-1-one, dibenzyl diphenyl sulfide, tetramethylthiuram monosulfide, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)one, α-hydroxy-α,α'-dimethylacetophenone, 2-methyl-2-hydroxy 1-Hydroxycyclohexylphenyl ketone, Mischel ketone, acetophenone, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinylpropane-1-one, benzoin methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl, benzoin, dibenzyl, α-hydroxycyclohexylphenyl ketone, dimethyl benzoin, 2-hydroxymethylphenylpropane, 2-naphthalenesulfonyl chloride, 1-phenyl-1,1-propanedione-2-(o-ethoxycarbonyl)oxime, Benzophenone, benzoylbenzoic acid, 4,4'-dimethylaminobenzophenone, 4,4'-diethylaminobenzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-4-methoxybenzophenone, o-acryloyloxybenzophenone, p-acryloyloxybenzophenone, o-methacryloyloxybenzophenone, p-methacryloyloxybenzophenone, p-(meth)acryloyloxyethoxybenzophenone, 1,4-butanediol mono(meth)acrylate, 1,2-ethylene glycol mono(meth)acrylate, 1,8-octanediol mono(meth)acrylate, and other acrylates containing benzoylbenzophenone. Keto-4-carboxylic acid esters; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, azobisisobutyronitrile, β-chloroanthraquinone, camphorquinone, haloketone, acylphosphine oxide, acylphosphonate, polyvinylbenzophenone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, 2-ethylanthraquinone, tert-butylanthraquinone, 2,4,5-triarylimidazolium dimer, etc., and one or more of these can be used in combination.

[0149] Furthermore, among these, benzophenone derivatives and alkylbenzophenone derivatives are preferred. These compounds have a hydroxyl group as a reactive functional group in their molecules, which can be linked to the base resin or curing resin through the reactive functional group, thereby more reliably performing the function of photopolymerization initiator.

[0150] The photopolymerization initiator is preferably blended at a ratio of 0.1 parts by weight or more and 50 parts by weight or less relative to 100 parts by weight of the base resin, and more preferably at a ratio of 0.5 parts by weight or more and 10 parts by weight or less. As described above, by adjusting the blending amount of the photopolymerization initiator, the pick-up performance of the semiconductor chip 20 becomes appropriate.

[0151] (4) Crosslinking agent

[0152] Furthermore, the curable resin may also contain a crosslinking agent. By including a crosslinking agent, the curability of the curable resin can be improved.

[0153] There are no particular limitations on the type of crosslinking agent, but examples include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, urea resin-based crosslinking agents, hydroxymethyl-based crosslinking agents, chelate-based crosslinking agents, aziridine-based crosslinking agents, melamine-based crosslinking agents, polyvalent metal chelate-based crosslinking agents, acid anhydride-based crosslinking agents, polyamine-based crosslinking agents, and carboxyl-containing polymer-based crosslinking agents. Among these, isocyanate-based crosslinking agents are preferred.

[0154] There are no particular limitations on the type of isocyanate crosslinking agent, but examples include polyisocyanate compounds and trimers of polyisocyanates, trimers of terminal isocyanate compounds obtained by reacting polyisocyanate compounds with polyol compounds, and blocked polyisocyanate compounds obtained by blocking terminal isocyanate urethane prepolymers with phenols, oximes, etc.

[0155] Furthermore, examples of polyvalent isocyanates include 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-xylene diisocyanate, 1,4-xylene diisocyanate, 4,4'-diphenylmethane diisocyanate, 2,4'-diphenylmethane diisocyanate, 3-methyldiphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, 2,4'-dicyclohexylmethane diisocyanate, 4,4'-diphenyl ether diisocyanate, 4,4'-[2,2-bis(4-phenoxyphenyl)propane] diisocyanate, and 2,2,4-trimethylhexamethylene diisocyanate, and one or more of these can be used in combination. Among these, preferably at least one polyisocyanate selected from the group consisting of 2,4-methylenephenyl diisocyanate, diphenylmethane-4,4'-diisocyanate and hexamethylene diisocyanate.

[0156] The crosslinking agent is preferably blended at a ratio of 0.01 parts by weight or more and 50 parts by weight or less relative to 100 parts by weight of the base resin, and more preferably at a ratio of 5 parts by weight or more and 50 parts by weight or less. As described above, by adjusting the blending amount of the crosslinking agent, the pick-up performance of the semiconductor chip 20 from the adhesive layer 2 can be made appropriate.

[0157] (5) Plasticizers

[0158] Furthermore, the resin composition constituting adhesive layer 2 may also contain a plasticizer. By containing a plasticizer, the flexibility of adhesive layer 2, which is reduced by the application of energy, can be improved.

[0159] There are no particular limitations on the type of plasticizer, but examples include phthalate plasticizers such as DOP (dioctyl phthalate), DBP (dibutyl phthalate), DIBP (diisobutyl phthalate), and DHP (diheptyl phthalate); aliphatic diester plasticizers such as DOA (di-2-ethylhexyl adipate), DIDA (diisodecyl adipate), and DOS (di-2-ethylhexyl sebacate); aromatic carboxylic acid ester plasticizers such as benzoates of ethylene glycol; trimellitate plasticizers such as TOTM (trioctyl trimellitate); adipate plasticizers; and polyester plasticizers. One or more of these can be used in combination. Among these, polyester plasticizers are preferred. By using a polyester plasticizer as the plasticizer, the effects obtained by containing the plasticizer in the resin composition constituting the adhesive layer 2 can be more significantly achieved.

[0160] Polyester plasticizers are obtained, for example, through the condensation polymerization of polyvalent carboxylic acids such as adipic acid, azelaic acid, sebacic acid, phthalic acid, isophthalic acid, and terephthalic acid with diols such as ethylene glycol, propylene glycol, butanediol, neopentyl glycol, and hexanediol.

[0161] The content of plasticizer in the adhesive layer 2, i.e., the resin composition, is not particularly limited, but is preferably 8% by weight or more and 60% by weight or less, more preferably 10% by weight or more and 58% by weight or less, and even more preferably 15% by weight or more and 55% by weight or less. This reliably improves the flexibility of the adhesive layer 2, thus allowing the effects obtained by containing plasticizer in the adhesive layer 2 to be more significantly realized.

[0162] (6) Conductive materials (antistatic agents)

[0163] Furthermore, it is preferable that the resin composition constituting the adhesive layer 2 contains a conductive material that is conductive. By including such a conductive material, the conductive material can function as an antistatic agent, thereby reliably suppressing or preventing the generation of static electricity in the semiconductor chip 20 in the aforementioned semiconductor chip 20 manufacturing method.

[0164] There are no particular limitations on the conductive material as long as it is conductive. In addition, the conductive material can be the same as the conductive material that can be included in the substrate 4, for example, surfactants, permanent antistatic polymers (IDP), metal materials, metal oxide materials and carbon-based materials, and one or more of these can be used in combination.

[0165] Furthermore, if the structure is configured such that one of the substrate 4 and the adhesive layer 2 contains a conductive material, it is preferable that the substrate 4 contains a conductive material. This allows for more reliable suppression or prevention of static electricity generation in the semiconductor chip 20 without requiring the conductive material to be reliably attached to the semiconductor chip 20.

[0166] (7) Other ingredients

[0167] Furthermore, in addition to the components (1) to (6) mentioned above, the resin composition constituting the adhesive layer 2 may contain at least one of the following as other components: adhesive agent, anti-aging agent, adhesive modifier, filler, colorant, flame retardant, softener, antioxidant, and surfactant as a homogenizer.

[0168] Furthermore, among these, there are no particular limitations on the adhesives used, but examples include rosin resin, terpene resin, coumarone resin, phenolic resin, aliphatic petroleum resin, aromatic petroleum resin, and aliphatic-aromatic copolymer petroleum resin, and one or more of these can be used in combination.

[0169] Furthermore, the average thickness of the adhesive layer 2 is not particularly limited, but is preferably 5 μm or more and 30 μm or less, more preferably 7 μm or more and 25 μm or less, and even more preferably 10 μm or more and 20 μm or less. By setting the average thickness of the adhesive layer 2 within such a range, the adhesive layer 2 exhibits good adhesion before energy is applied to it, and good peelability between the adhesive layer 2 and the semiconductor chip 20 after energy is applied to it.

[0170] Alternatively, the adhesive layer 2 may also be composed of a laminate (multilayer body) consisting of multiple layers made of different resin compositions.

[0171] Furthermore, regarding the adhesive tape 100 with such a structure, for example, after dissolving the constituent material of the adhesive layer 2, namely the resin composition, in a solvent to form a varnish-like liquid material, it is coated or spread on the spacer, and then the solvent is evaporated to form the adhesive layer 2. Subsequently, the substrate 4 is pressed onto the surface of the adhesive layer 2 on the side opposite to the spacer, thereby manufacturing it in a state formed on the spacer.

[0172] Furthermore, the adhesive tape 100 manufactured as described above is used in the manufacturing method of the semiconductor device using the aforementioned adhesive tape 100 after the adhesive tape 100 is peeled off from the spacer.

[0173] The adhesive tape of the present invention has been described above, but the present invention is not limited thereto.

[0174] For example, in each layer of the adhesive tape of the present invention, any component that can perform the same function can be added, or the substrate can be composed of a plurality of layers in addition to being composed of one layer as described in the embodiments. For example, an antistatic layer can be provided on the side of the substrate opposite to the adhesive layer.

[0175] Furthermore, the structure of each layer of the adhesive tape can be replaced with any structure that can perform the same function, or any structure can be added.

[0176] Furthermore, the adhesive tape can be used to obtain a semiconductor chip (semiconductor element) as a component, which is formed by monolithically forming a semiconductor substrate as a substrate by laser irradiation. However, it is not limited to this case. It can also be used when various substrates such as glass substrates, ceramic substrates, resin material substrates and metal material substrates are cut (monolithically formed) along the thickness direction by laser irradiation.

[0177] Furthermore, based on the structure of the semiconductor device formed using adhesive tape, the formation of the molding portion 17 of the semiconductor device 10 can also be omitted.

[0178] In addition, the semiconductor chip 20 manufactured using the adhesive tape of the present invention can be widely used in mobile phones, digital cameras, camcorders, car navigation systems, personal computers, game consoles, LCD TVs, LCD displays, organic light-emitting displays, printers, etc.

[0179] [Example]

[0180] Next, specific embodiments of the present invention will be described.

[0181] Furthermore, the present invention is not limited to any of the descriptions in these embodiments.

[0182] 1. Preparation of raw materials

[0183] First, the raw materials used in the manufacture of the adhesive tapes for the embodiments and comparative examples are shown below.

[0184] (Polyolefin resin 1)

[0185] As polyolefin resin 1, a mixture containing linear low-density polyethylene (LLDPE) and low-density polyethylene (LDPE) in a weight ratio (LLDPE:LDPE) = 7:3 was prepared.

[0186] (Polyolefin resin 2)

[0187] As polyolefin resin 2, a mixture containing linear low-density polyethylene (LLDPE) and low-density polyethylene (LDPE) in a weight ratio (LLDPE:LDPE) = 6:4 was prepared.

[0188] (Polyolefin resin 3)

[0189] As polyolefin resin 3, a mixture containing linear low-density polyethylene (LLDPE) and low-density polyethylene (LDPE) in a weight ratio (LLDPE:LDPE) = 8:2 was prepared.

[0190] (Polyolefin resin 4)

[0191] As polyolefin resin 4, an ethylene-methacrylic acid copolymer (EMAA) with an acid content of 9% was prepared.

[0192] (Polyolefin resin 5)

[0193] As polyolefin resin 5, an ethylene-vinyl acetate copolymer (EVA) with a vinyl acetate content of 16% was prepared.

[0194] (Polyolefin resin 6)

[0195] As polyolefin resin 6, a mixture containing polypropylene (PP) and styrene-isoprene-styrene block copolymer (SIS) in a weight ratio (PP:SIS) of 6:4 was prepared.

[0196] (Antistatic agent)

[0197] As an antistatic agent, a polyether-based antistatic agent (manufactured by Sanyo Chemical Industries, Ltd., "PELECTRON PVL") was prepared.

[0198] (Base resin)

[0199] As the base resin 1, an acrylic copolymer was prepared by mixing four types of acrylic acid, 2-hydroxyethyl acrylate, 2-ethylhexyl acrylate, and butyl methacrylate and then polymerizing them in toluene solvent using conventional methods.

[0200] In addition, the glass transition point and weight-average molecular weight of base resin 1 (acrylic polymer) are as follows: glass transition point: -37℃, weight-average molecular weight: 600,000.

[0201] (Curing resin)

[0202] As a curing resin, urethane acrylate (manufactured by Miwon Specialty Chemical Co., Ltd., product number: SC2152) was prepared.

[0203] (Cross-linking agent)

[0204] As a crosslinking agent, polyisocyanate (manufactured by Tosoh Corporation, product number: CORONATE L) was prepared.

[0205] (Photopolymerization initiator)

[0206] Benzyl dimethyl ketal (manufactured by Tokyo Chemical Industry Co., Ltd.) was prepared as a photopolymerization initiator.

[0207] 2. Making adhesive tape

[0208] [Example 1]

[0209] A substrate 4 with a thickness of 150 μm was produced by extruding 1 (100 parts by weight) of polyolefin resin 1 as a resin composition using an extruder.

[0210] Next, a liquid material containing a resin composition blended with a base resin (100 parts by weight), a curing resin (40 parts by weight), a crosslinking agent (2 parts by weight), and a photopolymerization initiator (5 parts by weight) was prepared. This liquid material was then rod-coated onto a PET spacer to achieve a dry adhesive layer 2 thickness of 10 μm, and dried at 80°C for 1 minute, thereby forming an adhesive layer 2 on the upper surface (one side) of the spacer.

[0211] Next, by attaching the substrate 4 prepared above to the upper surface of the adhesive layer 2, the adhesive tape 100 of Example 1 covered by the spacer is obtained.

[0212] [Examples 2-8, Comparative Examples 1-2]

[0213] The types and contents of each constituent material in the resin composition were changed as shown in Table 1. Otherwise, the process was the same as in Example 1, and adhesive tapes of Examples 2 to 8 and Comparative Examples 1 to 2 were obtained.

[0214] 3. Evaluation

[0215] <Measurement of weight reduction rate on the TG curve of the substrate>

[0216] Regarding the substrate 4 of the adhesive tape 100 in each embodiment and comparative example, differential thermal analysis (TG) curves of the substrate 4 were obtained by performing simultaneous differential thermal and thermogravimetric measurements according to the method described below under the apparatus and conditions described below. Furthermore, using the obtained TG curves, the weight loss rates from room temperature (25°C) to 400°C, from room temperature (25°C) to 420°C, and from room temperature (25°C) to 450°C were determined.

[0217] Measuring device: STA200 (manufactured by Hitachi High-Tech Science Corporation).

[0218] Atmospheric gas: nitrogen.

[0219] Gas introduction rate: 200ml / minute.

[0220] Heating rate: 5℃ / minute.

[0221] <Measurement of the tensile modulus of elasticity of the substrate>

[0222] For the adhesive tapes 100 of each embodiment and comparative example, the tensile modulus of the substrate 4 was measured using a universal tensile testing machine (A&D Company, Limited, “RTH-1225”). Measurements were performed at 23°C and a tensile speed of 2 mm / min, according to JIS K 7161:2014.

[0223] <Evaluation of whether any breakage occurred in the adhesive tape>

[0224] Regarding the adhesive tape 100 of each embodiment and each comparative example, it was peeled off from the spacer, and with the adhesive layer 2 set on the upper side, pulsed laser light was irradiated 5 times with the focus set on the upper 50μm portion (that is, the portion 50μm away from the surface of the adhesive layer 2 in the thickness direction of the adhesive tape 100).

[0225] In addition, the irradiation conditions for the pulsed laser beam irradiating the upper 50μm portion of the adhesive tape 100 are as follows.

[0226] (Irradiation conditions of pulsed laser beam)

[0227] Light source: Q-switched Nd:YVO4 pulsed laser.

[0228] Wavelength: 355nm pulsed laser.

[0229] Repetition frequency: 500kHz.

[0230] Laser intensity: For a 125μm thick PET film (A4130: manufactured by Toyobo Co., Ltd.), the intensity is sufficient to cut a 50μm deep slit with a single pulse laser irradiation.

[0231] Furthermore, regarding the adhesive tapes of each embodiment and each comparative example after being irradiated with pulsed laser light, the presence or absence of breakage in the adhesive tape (substrate) was visually confirmed, and evaluated according to the following criteria.

[0232] (Evaluation Criteria)

[0233] In the adhesive tape (substrate), A: The thickness of the substrate remains at more than 50%.

[0234] B: No obvious fracture was detected.

[0235] D: A clear fracture was confirmed, which has a significant impact on its function as an adhesive tape.

[0236] <Evaluation of the pick-up capability of silicon chips>

[0237] First, a silicon wafer (manufactured by SUMCO CORPORATION) was prepared and ground to a thickness of 130 μm using conventional methods. Then, it was ground to a thickness of 100 μm using a #2000 grinding wheel. The adhesive tape 100 of each embodiment and comparative example was then fixed with the adhesive layer 2 on the silicon wafer side. Subsequently, the silicon wafer was cut along its thickness direction by irradiation with pulsed laser light to monolithize it, thereby obtaining multiple silicon chips with a length of 6 mm × width of 6 mm.

[0238] In addition, the irradiation conditions of the pulsed laser beam irradiating the silicon wafer are as follows.

[0239] (Irradiation conditions of pulsed laser beam)

[0240] Light source: Q-switched Nd:YVO4 pulsed laser.

[0241] Wavelength: 355nm pulsed laser.

[0242] Repetition frequency: 500kHz.

[0243] Subsequently, the adhesive layer 2 was subjected to ultraviolet irradiation at a intensity of 55 W / cm². 2 Ultraviolet radiation dose: 200 mJ / cm 2 Under conditions of ultraviolet radiation, the adhesive layer 2 is cured by being irradiated with ultraviolet light, thereby imparting energy.

[0244] Then, the adhesive tape 100 is stretched (expanded) radially along its surface direction, and the silicon chip is pushed up using a needle with a front diameter of 100 μm and the push-up amount of the needle is set to 400 [μm].

[0245] Then, while maintaining the needle-based silicon chip in a pushed-up state, the silicon chip was picked up by adsorption based on a vacuum nozzle.

[0246] By performing the process described above, the adsorption-based silicon chip pickup was repeated 50 times for each of the adhesive tapes used in each embodiment and each comparative example.

[0247] Furthermore, regarding the adhesive tapes of each embodiment and each comparative example, the success or failure (pickup) of the adsorption-based pickup of the silicon chips was evaluated on the silicon chips obtained respectively according to the following criteria.

[0248] (Evaluation Criteria)

[0249] A: It can pick up 50 silicon chips.

[0250] B: Capable of picking up more than 48 but less than 50 silicon chips.

[0251] C: Capable of picking up more than 40 but less than 48 silicon chips.

[0252] D: Capable of picking up fewer than 40 silicon chips.

[0253] The evaluation results obtained as described above are shown in Table 1.

[0254] [Table 1]

[0255] As shown in Table 1, in each embodiment, by satisfying a weight reduction rate of less than 50% on the TG curve of the substrate from room temperature to 420°C, the following results are shown: the generation of breakage in the adhesive tape (substrate) is suppressed, and silicon chip pickup can be performed with excellent precision.

[0256] In contrast, in each comparative example, the weight reduction rate from room temperature to 420°C on the TG curve of the substrate was less than 50%, resulting in breakage in the adhesive tape (substrate), which made it impossible to pick up the silicon chip with excellent precision.

[0257] Industrial applicability

[0258] According to the present invention, after a cutting process in which a substrate such as a semiconductor wafer attached to an adhesive tape is cut along the thickness direction by laser irradiation to monolithize it, thereby forming a component such as a semiconductor chip on the adhesive tape, a stretching process of the adhesive tape and a picking process of the picking component are sequentially performed. This ensures that breakage in the adhesive tape used to detach the component from the adhesive tape can be reliably suppressed or prevented during substrate monolithization. Therefore, the picking process of the component can be performed with excellent precision. Thus, the present invention is industrially usable.

[0259] Explanation of reference numerals in the attached figures

[0260] 2-Adhesive layer, 4-Substrate, 7-Semiconductor substrate, 9-Wafer ring, 10-Semiconductor device, 17-Molding part, 20-Semiconductor chip, 21-Terminal, 23-Semiconductor chip body part, 25-Gap, 30-Intermediate layer, 41-Terminal, 70-Bump, 80-Sealing layer, 81-Connector, 85-Solder bump, 100-Adhesive tape, 121-Outer periphery, 122-Center, 150-Light irradiator, 151-Laser beam, 200-Pickup platform, 210-Center, 220-Outer periphery, 250-Cutting machine platform.

Claims

1. An adhesive tape comprising a substrate and an adhesive layer, which is a base resin having adhesive properties as the main material and is laminated on one side of the substrate, and is used in the following situations: while a substrate is fixed to the adhesive layer, the substrate is cut along its thickness direction by irradiating it with a laser beam, a plurality of components are formed by monolithizing the substrate, and then each of the components is detached from the adhesive layer, wherein... The adhesive tape is characterized in that... In the substrate, the weight reduction rate from room temperature to 420°C on the TG curve obtained by simultaneous differential thermal / thermal weight measurement according to JIS K 0129 is less than 50%.

2. The adhesive tape according to claim 1, wherein, The tensile modulus of elasticity of the substrate at 23°C is below 200 MPa.

3. The adhesive tape according to claim 1, wherein, The substrate contains polyolefin resin as the main material.

4. The adhesive tape according to claim 3, wherein, The polyolefin resin is a polyethylene resin.

5. The adhesive tape according to claim 4, wherein, The polyethylene resin mainly contains components with a specific gravity of 0.94 or less.

6. The adhesive tape according to claim 1, wherein, The base resin is an acrylic resin.

7. The adhesive tape according to claim 6, wherein, The adhesive layer further contains a curable resin that is cured by applying energy, and is configured to reduce the adhesive force on the substrate and the component on the adhesive layer by applying the energy.

8. The adhesive tape according to claim 1, wherein, The substrate has a thickness of 30 μm or more and 300 μm or less.

9. The adhesive tape according to claim 1, wherein, The adhesive layer has a thickness of 5 μm or more and 30 μm or less.

10. The adhesive tape according to claim 1, wherein, The adhesive tape is configured such that the separation of the component from the adhesive layer is achieved by extending the adhesive tape along the surface direction and pulling the component out from the opposite side of the substrate while pushing it up from the substrate side.

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