Photovoltaic device and solar cell

Abstract

The application relates to the photovoltaic technology field and provides a photovoltaic device and a solar cell. The photovoltaic device comprises a substrate, an N-type doped part, a P-type doped part, a first electrode and a second electrode. The plurality of N-type doped parts and the plurality of P-type doped parts can separate electrons and holes. By arranging three N-type doped parts and three P-type doped parts in the plurality of N-type doped parts and the plurality of P-type doped parts around a preset center, the N-type doped part and the P-type doped part can fully absorb the carriers around them in the case that the number of the N-type doped part and the P-type doped part is relatively small. In this way, the number of the doped part of the photovoltaic device is small, the interface coincidence, parasitic absorption and metal recombination of the photovoltaic device can be reduced, and the carrier absorption efficiency of the photovoltaic device is improved.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, specifically to a photovoltaic device and a solar cell. Background Technology

[0002] Back-contact solar cells (BC cells) are a type of high-efficiency crystalline silicon solar cell technology. Their core feature is that the PN junction and metal electrodes are all placed on the back of the cell, with no grid lines blocking the front, thereby maximizing the utilization of incident light and improving conversion efficiency.

[0003] Currently, to ensure the absorption effect of charge carriers in solar cells, the number of doped regions can be increased. However, the more doped regions there are, the more problems such as interface recombination, parasitic absorption, and metal recombination will be aggravated, making it difficult to balance the charge carrier absorption capacity of solar cells with the generation of problems such as interface recombination, parasitic absorption, and metal recombination. Summary of the Invention

[0004] This application provides a photovoltaic device to balance the problems of polycrystalline silicon recombination, absorption, and carrier collection in solar cells of related technologies.

[0005] To achieve the above objectives, this application adopts the following technical solution: In a first aspect, this application provides a photovoltaic device, comprising: Substrate; Multiple N-type doped regions are stacked on one side of the substrate along a first direction, which is the thickness direction of the substrate; Multiple P-type doped portions are stacked on one side of the substrate along the first direction, and the N-type doped portions are located on the same side of the substrate as the P-type doped portions. Multiple first electrodes are respectively connected to multiple N-type doped portions; Multiple second electrodes are respectively connected to multiple P-type doped portions; The substrate has a preset point on one side, and around the preset point, three N-type doped parts and three P-type doped parts are alternately arranged in a ring.

[0006] In some embodiments, the three N-type doped portions and the three P-type doped portions are located at the vertices of a preset regular hexagon around the preset point, the preset point being the center of the preset regular hexagon.

[0007] In some embodiments, the cross-section of the N-type doped portion in the first direction is circular, triangular, or rounded triangular, and the cross-section of the P-type doped portion in the first direction is circular, triangular, or rounded triangular.

[0008] In some embodiments, there are multiple preset points, which are distributed along a second direction and a third direction, and the first direction, the second direction and the third direction intersect each other.

[0009] In some embodiments, along the third direction, a portion of the N-type doped portion and a portion of the P-type doped portion are simultaneously disposed around two adjacent preset points.

[0010] In some embodiments, the N-type doped portion includes a tunneling layer and a doped polysilicon layer, the tunneling layer being stacked on the substrate along the first direction, and the doped polysilicon layer being stacked on the side of the tunneling layer facing away from the substrate; The P-type doped region includes an intrinsic amorphous silicon layer and a doped amorphous silicon layer. The intrinsic amorphous silicon layer is stacked on one side of the substrate, and the doped amorphous silicon layer is stacked on the side of the intrinsic amorphous silicon layer facing away from the substrate. Alternatively, the P-type doped portion includes a tunneling layer and a doped polysilicon layer, wherein the tunneling layer is stacked on the substrate along the first direction, and the doped polysilicon layer is stacked on the side of the tunneling layer facing away from the substrate; The N-type doped region includes an intrinsic amorphous silicon layer and a doped amorphous silicon layer. The intrinsic amorphous silicon layer is stacked on one side of the substrate, and the doped amorphous silicon layer is stacked on the side of the intrinsic amorphous silicon layer facing away from the substrate.

[0011] In some embodiments, the photovoltaic device further includes an electrical connection layer stacked on the side of the N-type doped portion and the P-type doped portion facing away from the substrate, and the electrical connection layer is electrically connected to a plurality of first electrodes and a plurality of second electrodes.

[0012] In some embodiments, the electrical connection layer includes an insulating layer, a first connector, a second connector, and an adhesive layer. The first connector and the second connector are both disposed on the insulating layer. The insulating layer is stacked on the side of the N-type doped portion and the P-type doped portion facing away from the substrate, and the insulating layer is bonded to the N-type doped portion and the P-type doped portion through the adhesive layer. The first connector is electrically connected to a plurality of first electrodes, and the second connector is electrically connected to a plurality of second electrodes.

[0013] In some embodiments, the first connector has a plurality of interconnected first connection portions, the plurality of first connection portions being spaced apart within the insulating layer along the second direction, any one of the first connection portions extending along the third direction, and any one of the first connection portions being electrically connected to a plurality of first electrodes distributed along the third direction. The second connector has a plurality of interconnected second connection portions, which are spaced apart within the insulating layer along the second direction. Any second connection portion extends along the third direction, and any second connection portion is electrically connected to a plurality of second electrodes distributed along the third direction.

[0014] Secondly, based on the photovoltaic device described above, this application also provides a solar cell, including the photovoltaic device described above.

[0015] This application provides a photovoltaic device in which the side of the substrate facing away from the N-type and P-type doped portions can receive photons, thereby forming electrons and holes inside the photovoltaic device. Multiple N-type and P-type doped portions can separate the electrons and holes. A first electrode and a second electrode can be connected to an external electrical connection structure, allowing electrons and holes to be collected by the first and second electrodes to form a current. By arranging three N-type and three P-type doped portions at a predetermined center interval, the N-type and P-type doped portions can effectively absorb surrounding charge carriers even with a relatively small number of doped portions. This results in a photovoltaic device with fewer doped portions, reducing interface recombination, parasitic absorption, and metal recombination, and improving the charge carrier absorption efficiency of the photovoltaic device. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of a photovoltaic device provided in an embodiment of this application.

[0018] Figure 2 Schematic diagram of the distribution of N-type and P-type doped parts in the photovoltaic device provided in the embodiments of this application. Figure 1 .

[0019] Figure 3 Schematic diagram of the distribution of N-type and P-type doped parts in the photovoltaic device provided in the embodiments of this application. Figure 2 .

[0020] Figure 4 Schematic diagram of the distribution of N-type and P-type doped parts in the photovoltaic device provided in the embodiments of this application. Figure 3 .

[0021] Figure 5 This is a schematic diagram showing the connection between the first connector and the first electrode of the photovoltaic device provided in the embodiments of this application.

[0022] Figure 6 This is a schematic diagram showing the electrical connection layer of a photovoltaic device covering a substrate, as provided in an embodiment of this application.

[0023] Figure 7 This is a schematic diagram of the internal structure of the electrical connection layer of the photovoltaic device provided in the embodiments of this application.

[0024] Explanation of reference numerals in the attached figures: 100-substrate; 200-silicon nitride layer; 300 - N-type doped region; 310 - First electrode; 320 - Doped polysilicon layer; 330 - Tunneling layer; 400 - P-type doped region; 410 - Second electrode; 420 - Intrinsic amorphous silicon layer; 430 - Doped amorphous silicon layer; 500 - Electrical connection layer; 510 - Insulating layer; 511 - First connection hole; 512 - Second connection hole; 520 - First connector; 521 - First connection portion; 522 - First joint portion; 530 - Second connector; 531 - Second connection portion; 532 - Second joint portion; 540 - Adhesive layer; 550 - Support layer; 560 - Protective film layer; 600-passivation layer; 700-Antireflection layer; 800-alumina film layer. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0026] Back-contact solar cells (BC cells) are a type of high-efficiency crystalline silicon solar cell technology. Their core feature is that the PN junction and metal electrodes are all placed on the back of the cell, with no grid lines blocking the front, thereby maximizing the utilization of incident light and improving conversion efficiency.

[0027] Currently, in order to ensure the absorption effect of charge carriers, solar cells adopt the method of increasing the area of ​​doped polycrystalline silicon on the back side. However, this also leads to problems such as interface recombination, parasitic absorption and metal recombination, which in turn affects the performance of solar cells.

[0028] This application provides a photovoltaic device in which the side of the substrate facing away from the N-type and P-type doped portions can receive photons, thereby forming electrons and holes inside the photovoltaic device. Multiple N-type and P-type doped portions can separate the electrons and holes. A first electrode and a second electrode can be connected to an external electrical connection structure, allowing electrons and holes to be collected by the first and second electrodes to form a current. By arranging three N-type and three P-type doped portions at a predetermined center interval, the N-type and P-type doped portions can effectively absorb surrounding charge carriers even with a relatively small number of doped portions. This results in a photovoltaic device with fewer doped portions, reducing interface recombination, parasitic absorption, and metal recombination, and improving the charge carrier absorption efficiency of the photovoltaic device.

[0029] Furthermore, the back side of the substrate facing the N-type and P-type doped portions can be configured with a pyramid-shaped textured structure. By reducing the number of N-type and P-type doped portions, the area of ​​the substrate not covered by the N-type and P-type doped portions is increased, thereby increasing the textured area on the back side of the substrate and improving the conversion efficiency and bifaciality of the photovoltaic device.

[0030] The contents of this application will now be described in detail with reference to the accompanying drawings, so that those skilled in the art can have a clearer and more detailed understanding of the contents of this application.

[0031] This application discloses a photovoltaic device, with reference to... Figures 1 to 4 As shown, the device includes a substrate 100, multiple N-type doped portions 300, multiple P-type doped portions 400, multiple first electrodes 310, and multiple second electrodes 410. This photovoltaic device can be applied in solar cells, specifically back-contact solar cells.

[0032] The substrate 100 is the basic component of the photovoltaic device of this application. The substrate 100 can provide a mounting base for at least some other components of the photovoltaic device. The substrate 100 can be a monocrystalline silicon substrate 100. The substrate 100 has a front side for receiving light and a back side opposite to it. The front side and the back side are located on opposite sides of the substrate 100 in its thickness direction.

[0033] Multiple N-type doped portions 300 and multiple P-type doped portions 400 are stacked on one side of the back surface of the substrate 100 along a first direction, i.e., the first direction is the thickness direction of the substrate 100. Figure 1 The X direction is shown in the diagram. There is no direct electrical connection between the N-type doped portion 300 and the P-type doped portion 400. Multiple first electrodes 310 are electrically connected one-to-one to each of the N-type doped portions 300, and multiple second electrodes 410 are electrically connected one-to-one to each of the P-type doped portions 400. Among the N-type doped portions 300 and P-type doped portions 400, every three N-type doped portions 300 and every three P-type doped portions 400 are arranged alternately in a ring around a predetermined point, thus forming a ring-shaped distribution structure of three N-type doped portions 300 and three P-type doped portions 400 in a plane perpendicular to the first direction. The predetermined point is... Figures 2 to 4 The M tag in the text.

[0034] Specifically, the substrate 100 is used to absorb photons and generate photogenerated carriers. The N-type doped region 300 is a semiconductor region with N-type conductivity, used to collect electrons. The P-type doped region 400 is a semiconductor region with P-type conductivity, used to collect holes. The N-type doped region 300 can absorb carriers within its surrounding annular region, and the P-type doped region 400 can absorb carriers within its surrounding annular region. The three N-type doped regions 300 and the three P-type doped regions 400 are arranged alternately in a ring around a predetermined point, meaning that the N-type doped regions 300 and P-type doped regions 400 are sequentially distributed alternately along a ring line. The first electrode 310 and the second electrode 410 are both conductors, such as metal electrodes. The first electrode 310 and the second electrode 410 directly lead the carriers collected by the N-type and P-type doped regions 400 to the external circuit. Compared to the interdigitated pattern extending in a single direction in current back-contact batteries, this arrangement structure eliminates the need for long-distance convergence through the secondary or primary gate.

[0035] Because of the structure employing three N-type doped portions 300 and three P-type doped portions 400 arranged alternately in a ring around a predetermined point, each N-type doped portion 300 and each P-type doped portion 400 can independently and directly transport charge carriers to the corresponding first electrode 310 or second electrode 410, significantly shortening the carrier transport distance. Compared to the current interdigitated back contact structure, the current does not need to flow along a longer secondary gate before converging to the main gate. The shortened transport path means a reduction in series resistance and Joule loss, thereby significantly improving the fill factor of the photovoltaic device of this application.

[0036] Furthermore, even with a relatively small number of N-type doped portions 300 and P-type doped portions 400, the N-type doped portions 300 and P-type doped portions 400 can fully absorb the surrounding charge carriers. This results in higher power generation efficiency for the photovoltaic device of this application, despite a smaller area of ​​the doped portions. It also reduces interfacial convergence, parasitic absorption, and metal recombination.

[0037] In some implementations, reference Figures 2 to 4 As shown, around a preset point, three N-type doped portions 300 and three P-type doped portions 400 are located at the vertices of a preset regular hexagon, with the preset point being the center of the hexagon. This ensures that the spacing between adjacent N-type doped portions 300 and P-type doped portions 400 remains consistent along the loop around the preset point, allowing the three N-type doped portions 300 and three P-type doped portions 400 to be arranged in a regular hexagonal array structure. This reduces the overlap in the carrier absorption range of adjacent N-type doped portions 300 and P-type doped portions 400, allowing each N-type doped portion 300 and P-type doped portion 400 to maximize the absorption of surrounding carriers. Therefore, with a relatively smaller number of N-type doped portions 300 and P-type doped portions 400, the photovoltaic device of this application achieves better carrier absorption.

[0038] In some implementations, reference Figures 2 to 4 As shown, the N-type doped portion 300 of this application has a circular, triangular, or rounded triangular cross-section in the first direction, and the P-type doped portion 400 has a circular, triangular, or rounded triangular cross-section in the first direction. By setting the cross-section of the N-type doped portion 300 in the first direction to be circular, triangular, or rounded triangular, the N-type doped portion 300 is made into a symmetrical equilateral structure. This allows the N-type doped portion 300 to fully absorb charge carriers within its surrounding circumference. Similarly, by setting the cross-section of the P-type doped portion 400 in the first direction to be circular, triangular, or rounded triangular, the P-type doped portion 400 is made into a symmetrical equilateral structure. This allows the P-type doped portion 400 to fully absorb charge carriers within its surrounding circumference.

[0039] In some implementations, reference Figures 1 to 4 As shown, this application has multiple preset points, distributed along a second direction and a third direction, with the first direction, second direction, and third direction intersecting each other. The second direction is... Figure 1 In the Y direction, the third direction is Figure 1 The Z direction in the equation.

[0040] Specifically, the three N-type doped portions 300 and three P-type doped portions 400 disposed at predetermined points can constitute a doped portion group. Multiple doped portion groups can be spaced apart along a second direction and a third direction, so that the multiple N-type doped portions 300 and multiple P-type doped portions 400 are arranged alternately not only along the second direction but also simultaneously along the third direction. This results in a regular distribution structure of the multiple N-type doped portions 300 and multiple P-type doped portions 400 within the plane defined by the second direction and the third direction, and a greater number of N-type doped portions 300 and P-type doped portions 400, thereby improving the carrier absorption capacity of the photovoltaic device of this application.

[0041] In some implementations, reference Figures 2 to 4 As shown, along the third direction, a portion of the N-type doped portion 300 and a portion of the P-type doped portion 400 are simultaneously wound around two adjacent preset points. Specifically, between two adjacent preset points along the third direction, one N-type doped portion 300 and one P-type doped portion 400 can be simultaneously wound around two adjacent preset points. This further reduces the number of N-type doped portions 300 and P-type doped portions 400, and ensures that each preset point is surrounded by three N-type doped portions 300 and three P-type doped portions 400.

[0042] Therefore, the area of ​​the doped portion in the photovoltaic device of this application can be further reduced, resulting in higher efficiency. Simultaneously, it can further reduce interfacial convergence, parasitic absorption, and metal recombination in the photovoltaic device.

[0043] In some implementations, reference Figures 1 to 4 As shown, to ensure reliable electrical isolation between the N-type doped portion 300 and the P-type doped portion 400 in a two-dimensional high-density arrangement, a gap exists between adjacent N-type doped portions 300 and P-type doped portions 400. Specifically, the gap region between the N-type doped portion 300 and the P-type doped portion 400 can be set as a direct physical gap, and the gap region can also be filled with an extension of insulating material or air.

[0044] Even if lateral diffusion, material overflow, or pattern deviation occurs between the N-type doped portion 300 and the P-type doped portion 400 during the fabrication process of the photovoltaic device of this application, the existence of a gap between the N-type doped portion 300 and the P-type doped portion 400 can still prevent direct contact between them, thereby eliminating the risk of accidental short circuit between them at the source. This improves the electrical isolation reliability, manufacturing yield, and long-term operational stability of the photovoltaic device of this application. The size of the gap can be selected according to the capabilities of the photolithography and etching processes, for example, from hundreds of nanometers to tens of micrometers, to adapt to different device design rules.

[0045] In some implementations, reference Figure 1As shown, the N-type doped portion 300 of this application may include a doped polycrystalline silicon layer 320 and a tunneling layer 330, and the P-type doped portion 400 may include an intrinsic amorphous silicon layer 420 and a doped amorphous silicon layer 430. Specifically, along the first direction, the tunneling layer 330 is stacked on the substrate 100, and the doped polycrystalline silicon layer 320 is directly stacked on top of the tunneling layer 330, and is a polycrystalline silicon layer doped with an N-type impurity, such as phosphorus. The tunneling layer 330 is a dielectric layer, and its function is to allow majority carriers to pass through through the tunneling effect while blocking minority carriers, thereby suppressing interface recombination and increasing the open-circuit voltage. The tunneling layer 330 may be a silicon oxide layer, a silicon nitride layer, or a stack thereof. The intrinsic amorphous silicon layer 420 is stacked on one side of the substrate 100, and the doped amorphous silicon layer 430 is stacked on the side of the intrinsic amorphous silicon layer 420 facing away from the substrate 100. The doped amorphous silicon layer 430 contains a P-type impurity, such as boron.

[0046] By including a doped polycrystalline silicon layer 320 in the N-type doped portion 300, the N-type doped portion 300 achieves good conductivity and high-temperature process compatibility, facilitating collaboration with subsequent heat treatment processes. The P-type doped portion 400 is configured as a heterojunction stack composed of an intrinsic amorphous silicon layer 420 and a doped amorphous silicon layer 430. The passivation capability of the intrinsic amorphous silicon layer 420 on the crystalline silicon surface significantly reduces the interface defect state density, thereby effectively suppressing minority carrier recombination and further improving the open-circuit voltage and fill factor. Simultaneously, the doped amorphous silicon layer 430 ensures effective hole collection.

[0047] Furthermore, in other embodiments, the N-type doped portion 300 may include an intrinsic amorphous silicon layer 420 and a doped amorphous silicon layer 430, and the P-type doped portion 400 may include a doped polycrystalline silicon layer 320 and a tunneling layer 330. This corresponds to different battery types than the aforementioned N-type doped portion 300 and P-type doped portion 400 structures.

[0048] In some implementations, reference Figure 1 , Figure 5 , Figure 6 and Figure 7 As shown, to lead out multiple first electrodes 310 and second electrodes 410, the photovoltaic device of this application may further include an electrical connection layer 500. The electrical connection layer 500 is stacked on the side of the N-type doped portion 300 and the P-type doped portion 400 facing away from the substrate 100, and the electrical connection layer 500 is electrically connected to the multiple first electrodes 310 and the multiple second electrodes 410. In this way, the electrical connection layer 500 can form a complete circuit after being connected to the first electrodes 310 and the second electrodes 410.

[0049] The electrical connection layer 500 can collect the current from the multiple first electrodes 310 and the multiple second electrodes 410 that are dispersedly arranged. The electrical connection layer 500 can also be electrically connected to external devices, so that the current generated by the photovoltaic device of this application can be transmitted to external devices, such as energy storage devices, power grids, or power-consuming devices, through the electrical connection layer 500. This eliminates the need for a separate connection structure for each first electrode 310 and second electrode 410 to connect to external devices, significantly simplifying the manufacturing process of the photovoltaic device.

[0050] In some implementations, reference Figure 1 , Figure 5 , Figure 6 and Figure 7 As shown, the electrical connection layer 500 of this application may include an insulating layer 510, a first connector 520, and a second connector 530. Both the first connector 520 and the second connector 530 are disposed on the insulating layer 510. The first connector 520 and the second connector 530 are conductive; specifically, the insulating layer 510 can insulate and separate the first connector 520 and the second connector 530, preventing direct contact between them and a short circuit. The insulating layer 510 is stacked on the side of the N-type doped portion 300 and the P-type doped portion 400 facing away from the substrate 100. The first connector 520 is electrically connected to a plurality of first electrodes 310, and the second connector 530 is electrically connected to a plurality of first electrodes 310.

[0051] In addition to spatially separating the first connector 520 and the second connector 530, the insulating layer 510 also covers and protects the surfaces of the N-type doped portion 300 and the P-type doped portion 400, allowing the closely arranged N-type doped portion 300 and P-type doped portion 400 to safely and efficiently draw current out separately. The material of the insulating layer 510 can be an organic insulating adhesive, an inorganic insulating film, or a combination thereof. The first connector 520 and the second connector 530 can be a metal conductive wire, a metal foil, a conductive strip, or a conductive adhesive.

[0052] In some implementations, reference Figure 5 and Figure 6 As shown, the first connector 520 of this application has a plurality of first connecting portions 521, which are spaced apart along a second direction. Any one of the first connecting portions 521 extends along a third direction, and any one of the first connecting portions 521 is electrically connected to a plurality of first electrodes 310 distributed along the third direction.

[0053] Specifically, multiple N-type doped portions 300 are sequentially arranged along the third direction, and these multiple N-type doped portions 300 arranged sequentially along the third direction can form N-type doping groups. There are also multiple N-type doping groups, which are spaced apart along the second direction. The first connecting portion 521 can be a strip-shaped structure, and the multiple first connecting portions 521 can be respectively opposite to the multiple N-type doping groups, with each first connecting portion 521 corresponding to and connected to the multiple N-type doped portions 300 in each N-type doping group.

[0054] The second connector 530 of this application has a plurality of second connectors 531, which are spaced apart along a second direction. Any second connector 531 extends along a third direction and is electrically connected to a plurality of second electrodes 410 distributed along the third direction.

[0055] Specifically, multiple P-type doped portions 400 are sequentially arranged along the third direction, and these multiple P-type doped portions 400 sequentially arranged along the third direction can form a P-type doping group. The number of P-type doping groups is also multiple, and these multiple P-type doping groups are spaced apart along the second direction. The second connecting portion 531 can be a strip-shaped structure, and the multiple second connecting portions 531 can be respectively opposite to the multiple P-type doping groups, and each second connecting portion 531 can be connected to the multiple P-type doped portions 400 in each P-type doping group.

[0056] Thus, a single first connection portion 521 extending along the third direction can cover the first electrodes 310 of multiple N-type doped portions 300 distributed along the third direction, and a single second connection portion 531 extending along the third direction can cover the second electrodes 410 of multiple P-type doped portions 400 distributed along the third direction. In this way, a unified connection of all the same type of first electrodes 310 and second electrodes 410 is achieved with a smaller number of first connection portions 521 and second connection portions 531. This not only optimizes the carrier transport path from the first electrodes 310 and second electrodes 410 to the first connection portions 521 and second connection portions 531, but also balances the current distribution of each branch, further reduces the series resistance, and saves on the number of first connection portions 521 and second connection portions 531.

[0057] Specifically, the first connecting part 521 and the second connecting part 531 can be made of silver paste. Silver paste has good conductivity, which greatly saves the amount of silver paste used while ensuring good conductivity of the first connecting part 521 and the second connecting part 531. This effectively improves the performance of the photovoltaic device of this application and reduces the manufacturing cost of the photovoltaic device.

[0058] refer to Figure 6As shown, the first connector 520 also includes a first connector portion 522, which extends along the distribution direction of the plurality of first connector portions 521, and the plurality of first connector portions 521 are electrically connected to the first connector portion 522.

[0059] The second connector 530 also includes a second connector portion 532, which extends along the distribution direction of the plurality of second connector portions 531, and the plurality of second connector portions 531 are electrically connected to the second connector portion 532.

[0060] The first connector 522 and the second connector 532 can serve as positive and negative electrode structures, respectively connected to the positive and negative electrodes of external devices. When there are multiple photovoltaic devices in this application, the first connector 522 and the second connector 532 of multiple photovoltaic devices can be connected to realize the series or parallel connection of multiple photovoltaic devices.

[0061] In some implementations, reference Figure 1 and Figure 7 As shown, the first connector 520 and the second connector 530 are both disposed within the insulating layer 510, so that the first connector 520 and the second connector 530 are separated by the insulating layer 510, thereby further improving the insulation separation effect between the first connector 520 and the second connector 530.

[0062] Specifically, the insulating layer 510 has a channel structure for the first connector 520 and the second connector 530 to pass through. Both the first connector 520 and the second connector 530 are covered by the insulating layer 510. The insulating layer 510 has a first connection hole 511 and a second connection hole 512. The shape and size of the first connection hole 511 match the first electrode 310, so that the first electrode 310 can pass through the first connection hole 511 and be electrically connected to the first connection part 521. The shape and size of the second connection hole 512 match the second electrode 410, so that the second electrode 410 passes through the second connection hole 512 and is electrically connected to the second connection part 531. This protects the connection between the first connection portion 521 and the first electrode 310, as well as the connection between the second connection portion 531 and the second electrode 410, from external moisture, contaminants, and mechanical stress. Furthermore, it prevents short circuits or leakage that could occur if the first and second connectors 520 and 530 directly contact the surface of the doped portion. This provides comprehensive and continuous physical and electrical protection for the photovoltaic device of this application, significantly improving its durability and operational reliability. The cross-section of the first and second connection holes can be circular, square, or other polygonal, and the holes can be filled with conductive paste or deposited with a metal coating.

[0063] Specifically, the first connecting portion 521 has multiple first connecting portion 521 positions distributed along a third direction. These multiple first connecting portions 521 positions are respectively opposite to multiple first connecting holes 511 distributed along a third direction, and the multiple first connecting portions 521 are connected to multiple first electrodes 310. This ensures a stable and reliable connection between the first connecting portion 521 and the multiple first electrodes 310, and that the connection points between the first connecting portion 521 and the first electrode 310 are distributed throughout the photovoltaic device. The contact area between the first connector 520 and the first electrode 310 is evenly distributed, increasing the tensile force between the first connector 520 and the first electrode 310, resulting in a more stable and reliable connection between the first connector 520 and the first electrode 310.

[0064] The second connecting portion 531 has multiple second connecting portion positions 531 distributed along a third direction. These multiple second connecting portions 531 are respectively opposite to multiple second connecting holes 512 distributed along a third direction. The multiple second connecting portions 531 are connected to multiple second electrodes 410. This ensures a stable and reliable connection between the second connecting portions 531 and the multiple second electrodes 410, and the connection points between the second connecting portions 531 and the second electrodes 410 are distributed throughout the photovoltaic device. The contact area between the second connector 530 and the second electrode 410 is evenly distributed, increasing the tensile strength between the second connector 530 and the second electrode 410, resulting in a more stable and reliable connection between the second connector 530 and the second electrode 410.

[0065] In some implementations, reference Figure 7 As shown, to enhance the connection reliability between the insulating layer 510 and the N-type doped portion 300 and the P-type doped portion 400, the electrical connection layer 500 may further include an adhesive layer 540. The adhesive layer 540 is disposed on the side of the insulating layer 510 facing the substrate 100, and the insulating layer 510 is fixed to the surface of the N-type doped portion 300, the surface of the P-type doped portion 400, and the gap region between the N-type doped portion 300 and the P-type doped portion 400 through the adhesive layer 540.

[0066] The adhesive layer 540 can be made of an adhesive based on acrylic, epoxy, or silicone, or it can be an adhesive coating integrally formed with the insulating layer 510.

[0067] Furthermore, the electrical connection layer 500 of this application also has a support layer 550, which is located on the side of the insulating layer 510 facing away from the substrate 100. The support layer 550 can provide a mounting base for the insulating layer 510, the first connector 520, and the second connector 530 to improve the structural strength of the electrical connection layer 500. The support layer 550 can be a transparent film layer.

[0068] In the process of fabricating the photovoltaic device of this application, when the electrical connection layer 500 has not yet covered the substrate 100, a protective film layer 560 may be provided on the side of the electrical connection layer 500 facing away from the support layer 550. When it is necessary to cover the substrate 100 with the electrical connection layer 500, the protective film layer 560 can be removed.

[0069] Based on the photovoltaic device described above, this application also proposes a solar cell including the aforementioned photovoltaic device. This solar cell can be a back-contact heterojunction cell, a tunnel oxide passivated contact cell, or other types of back-contact cells. Due to the use of the aforementioned photovoltaic device, the carrier transport distance is significantly shortened, the fill factor is improved, silver paste consumption is reduced, and welding pull is increased, thereby improving the overall conversion efficiency, reliability, and economy of the solar cell.

[0070] In actual manufacturing, a textured structure can be formed on the front side of the substrate 100, and a passivation layer 600 and an antireflection layer 700 can be stacked sequentially. An aluminum oxide film layer 800 and a silicon nitride layer 200 can be stacked sequentially on the side of the N-type doped portion 300 and the P-type doped portion 400 facing away from the substrate 100.

[0071] It should be noted that the terms "one embodiment," "embodiment," "exemplary embodiment," "some embodiments," etc., mentioned in the specification indicate that the described embodiment may include a specific feature, structure, or characteristic, but not every embodiment necessarily includes that specific feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same embodiment. Moreover, when a specific feature, structure, or characteristic is described in connection with an embodiment, implementing such a feature, structure, or characteristic in conjunction with other embodiments, whether explicitly described or not, is within the knowledge scope of those skilled in the art.

[0072] Generally speaking, terms should be understood at least in part by their use in context. For example, at least in part by context, the term "one or more" as used in the text can be used to describe any feature, structure, or characteristic of the singular meaning, or a combination of features, structures, or characteristics of the plural meaning. Similarly, at least in part by context, terms such as "a" or "the" can also be understood to convey either singular or plural usage.

[0073] It should be readily understood that the terms “on,” “above,” and “on top of” in this application should be interpreted in the broadest possible sense, such that “on” means not only “directly on something” but also “on something” with an intermediate feature or layer therebetween, and that “above” or “on top of” means not only “on something” but also “on something” without an intermediate feature or layer therebetween (i.e., directly on something).

[0074] Furthermore, for ease of explanation, spatially relative terms such as "below," "below," "under," "above," and "above" may be used to describe the relationship of one element or feature relative to other elements or features as shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation other than those shown in the figures. The device may have other orientations (rotated 90° or in other orientations), and the spatially relative descriptive terms used herein may be interpreted accordingly.

[0075] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A photovoltaic device, characterized in that, include: Substrate (100); Multiple N-type doped portions (300) are stacked on one side of the substrate (100) along a first direction, which is the thickness direction of the substrate (100); Multiple P-type doped portions (400) are stacked on one side of the substrate (100) along the first direction, and the N-type doped portion (300) and the P-type doped portion (400) are located on the same side of the substrate (100). Multiple first electrodes (310) are respectively connected to multiple N-type doped portions (300); Multiple second electrodes (410) are respectively connected to multiple P-type doped portions (400); The substrate (100) has a preset point on one side, and around the preset point, three N-type doped parts (300) and three P-type doped parts (400) are alternately arranged in a ring.

2. The photovoltaic device according to claim 1, characterized in that, Around the preset point, the three N-type doped portions (300) and the three P-type doped portions (400) are respectively located at the vertices of the preset regular hexagon, and the preset point is the center of the preset regular hexagon.

3. The photovoltaic device according to claim 2, characterized in that, The N-type doped portion (300) has a circular, triangular, or rounded triangular cross section in the first direction, and the P-type doped portion (400) has a circular, triangular, or rounded triangular cross section in the first direction.

4. The photovoltaic device according to claim 2, characterized in that, The number of preset points is multiple, and the multiple preset points are distributed along the second direction and the third direction, with the first direction, the second direction and the third direction intersecting each other.

5. The photovoltaic device according to claim 4, characterized in that, Along the third direction, a portion of the N-type doped portion (300) and a portion of the P-type doped portion (400) are simultaneously arranged around two adjacent preset points.

6. The photovoltaic device according to claim 5, characterized in that, The N-type doped portion (300) includes a tunneling layer (330) and a doped polysilicon layer (320). The tunneling layer (330) is stacked on the substrate (100) along the first direction, and the doped polysilicon layer (320) is stacked on the side of the tunneling layer (330) facing away from the substrate (100). The P-type doped portion (400) includes an intrinsic amorphous silicon layer (420) and a doped amorphous silicon layer (430). The intrinsic amorphous silicon layer (420) is stacked on one side of the substrate (100), and the doped amorphous silicon layer (430) is stacked on the side of the intrinsic amorphous silicon layer (420) facing away from the substrate (100). Alternatively, the P-type doped portion (400) includes a tunneling layer (330) and a doped polysilicon layer (320), the tunneling layer (330) being stacked on the substrate (100) along the first direction, and the doped polysilicon layer (320) being stacked on the side of the tunneling layer (330) facing away from the substrate (100). The N-type doped portion (300) includes an intrinsic amorphous silicon layer (420) and a doped amorphous silicon layer (430). The intrinsic amorphous silicon layer (420) is stacked on one side of the substrate (100), and the doped amorphous silicon layer (430) is stacked on the side of the intrinsic amorphous silicon layer (420) facing away from the substrate (100).

7. The photovoltaic device according to any one of claims 4-6, characterized in that, The photovoltaic device further includes an electrical connection layer (500), which is stacked on the side of the N-type doped portion (300) and the P-type doped portion (400) facing away from the substrate (100), and is electrically connected to a plurality of first electrodes (310) and a plurality of second electrodes (410).

8. The photovoltaic device according to claim 7, characterized in that, The electrical connection layer (500) includes an insulating layer (510), a first connector (520), a second connector (530), and an adhesive layer (540). The first connector (520) and the second connector (530) are both disposed on the insulating layer (510). The insulating layer (510) is stacked on the side of the N-type doped portion (300) and the P-type doped portion (400) facing away from the substrate (100). The insulating layer (510) is bonded to the N-type doped portion (300) and the P-type doped portion (400) through the adhesive layer (540). The first connector (520) is electrically connected to a plurality of first electrodes (310), and the second connector (530) is electrically connected to a plurality of second electrodes (410).

9. The photovoltaic device according to claim 8, characterized in that, The first connector (520) has a plurality of interconnected first connecting portions (521), the plurality of first connecting portions (521) are spaced apart in the insulating layer (510) along the second direction, any one of the first connecting portions (521) extends along the third direction, and any one of the first connecting portions (521) is electrically connected to a plurality of first electrodes (310) distributed along the third direction. The second connector (530) has a plurality of connected second connection portions (531), which are spaced apart in the insulating layer (510) along the second direction. Any second connection portion (531) extends along the third direction and is electrically connected to a plurality of second electrodes (410) distributed along the third direction.

10. A solar cell, characterized in that, Including the photovoltaic device as described in any one of claims 1-9.

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