A cleaning method and system suitable for around-plating silicon of crystalline silicon cells

Abstract

The present application relates to a kind of cleaning method and system suitable for the around plating silicon of crystalline silicon cell, it is related to cell cleaning field, it includes: step 100: collection cell image;Step 101: from the illumination direction identified in the cell image;Step 102: in response to the illumination direction generates and sends cell illumination instruction, and collection reflection image;Step 103: from the cell gray scale identified in the reflection image;Step 104: according to the cell gray scale determines around plating thickness;Step 105: from the minimum value of around plating thickness as protective thickness is selected;Step 106: according to the protective thickness selects alkali washing agent dosage;Step 107: in response to the alkali washing agent dosage generates and sends around plating alkali washing instruction.The present application has the effect of improving the efficiency of around plating silicon removal, and adapting alkali washing agent dosage according to the distribution of around plating silicon.

Description

Technical Field

[0001] This invention relates to the field of battery cleaning, and in particular to a cleaning method and system suitable for silicon-coated crystalline silicon batteries. Background Technology

[0002] Silicon wrapping is an unintended silicon film formed when the vapor-phase silicon precursor wraps around a non-target surface or side during the coating process of a crystalline silicon cell. It is a typical process defect in photovoltaic manufacturing.

[0003] In existing technologies, coated crystalline silicon cells are typically first acid-washed with an acidic reagent to remove the oxide layer on the silicon-coated surface, then alkaline-washed with an alkaline reagent to remove the silicon-coated surface, and finally acid-washed again with an acidic reagent to remove the oxide layer generated during the alkaline washing process. Generally, a chain system is used to transport the coated crystalline silicon cells sequentially to a spraying system that sprays acidic and alkaline reagents at a fixed speed for overall reagent spraying of the crystalline silicon cells.

[0004] The distribution of silicon wrapped around the crystalline silicon cell varies. Using a fixed dosage of alkaline washing can easily lead to incomplete removal of the silicon wrapped around the cell or damage to the crystalline silicon cell by the reagent, resulting in low efficiency of silicon wrapped around the cell removal. Summary of the Invention

[0005] In order to improve the efficiency of removing silicon-wound plating, the present invention provides a cleaning method and system suitable for silicon-wound plating in crystalline silicon solar cells by adjusting the alkaline washing dosage according to the distribution of silicon-wound plating.

[0006] In a first aspect, the present invention provides a cleaning method suitable for silicon-coated crystalline silicon solar cells, employing the following technical solution: A cleaning method for silicon-wound plating in crystalline silicon solar cells, comprising: Step 100: Acquire battery image; Step 101: Identify the irradiation direction from the battery image; Step 102: In response to the illumination direction, generate and send a battery illumination command, and acquire a reflection image; Step 103: Identify the battery grayscale from the reflected image; Step 104: Determine the coating thickness based on the battery grayscale; Step 105: Select the minimum value from the aforementioned coating thicknesses as the protective thickness; Step 106: Select the alkaline washing dosage according to the stated protective thickness; Step 107: In response to the generation of the alkaline wash dosage, send the wrap-around alkaline wash command.

[0007] By adopting the above technical solution, the thickness of the silicon coating is inverted by the grayscale of the reflected image, and the minimum thickness of the silicon coating is used to match the alkaline cleaning dosage for the protection thickness. This reduces the over-etching of the silicon substrate and the effective film layer, enabling precise cleaning of the silicon coating as needed and improving the efficiency of silicon coating removal.

[0008] Optional, also includes: Step 108: Calculate the difference between the plating thickness and the protective thickness, and define it as the residual thickness; Step 109: Analyze the residual thickness to determine the residual center; Step 110: Determine the residual range based on the residual center; Step 111: Determine the residual volume by combining the residual range and residual thickness; Step 112: Determine the removal dose based on the residual volume; Step 113: In response to the residual center and removal dose, generate and send a plating cleaning command.

[0009] By adopting the above technical solution, the removal dosage of local residues can be accurately determined by quantifying the thickness, center, range and volume of the residual plating. This allows for a second, precise removal of any local residues that may exist after alkaline washing, reducing the problem of excessively thick residues caused by uneven plating thickness.

[0010] Optional, also includes: Step 114: Determine the total dose by combining the removal dose and the alkaline washing dose; Step 115: Determine the amount of rinsing solution based on the total dosage, and identify the center of the battery from the battery image; Step 116: Generate a rinsing cycle by combining the amount of rinsing solution and the center of the battery; Step 117: In response to the rinsing cycle, generate and send a battery rinsing command.

[0011] By adopting the above technical solution, the total dosage is determined by combining the alkaline washing dosage and the residual removal dosage, and the corresponding rinsing liquid volume is matched. The rinsing process is planned based on the center of the battery, so that the rinsing liquid can evenly cover the battery surface and remove residual alkaline solution, thereby reducing the damage of residual agents to the battery.

[0012] Optionally, it also includes a reagent rinsing method, said reagent rinsing method comprising: Step 200: Determine surface information from the battery image; Step 201: Identify the surface curvature of the crystalline silicon solar cell from the surface information; Step 202: Determine the highest point of the surface based on the surface range, and generate and send a solution spraying command based on the highest point of the surface; Step 203: Determine the spray volume based on the spray ratio and rinsing solution volume; Step 204: Update the battery rinsing command in response to the spray volume and the highest point of the surface, and determine the surface angle according to the surface range; Step 205: Calculate the spray thickness based on the spray volume and surface angle, and determine the vertical wind force and thickness center based on the spray thickness; Step 206: In response to the vertical wind force and thickness center, generate and send a blowing processing command.

[0013] By adopting the above technical solution, when there is a curved surface on the crystalline silicon cell, it is difficult for the rinsing solution to rinse the crystalline silicon cell evenly. By identifying the range, angle and highest point of the curved surface, the precise spraying ratio, volume and vertical wind force are matched to achieve uniform spraying of the rinsing solution, reducing the problem of uneven cleaning of the curved surface. At the same time, the blowing treatment accelerates the liquid flow speed to remove the solution from the surface of the crystalline silicon cell.

[0014] Optionally, the reagent rinsing method further includes: Step 207: Identify the recessed range of the crystalline silicon cell based on the surface angle, and extract the recessed volume and recessed angle based on the recessed range; Step 208: Determine the moving wind force based on the concave volume, and determine the flow direction based on the curved surface angle; Step 209: Determine the flow wind force by combining the flow direction and the concave angle; Step 210: Calculate the final wind force and final angle by combining the moving wind force and the flowing wind force; Step 211: Generate and send a blowing adjustment command based on the final wind force and final angle, and determine the spray addition amount according to the final wind force and spray thickness; Step 212: In response to the depression range and spray amount, generate and send a rinsing add command.

[0015] By adopting the above technical solution, when there is a recessed area in the crystalline silicon cell, the solution cannot flow in the recessed area. At this time, by adjusting the angle and speed of the blowing air, the solution in the recessed area is driven to leave the recessed area. Furthermore, rinsing fluid is added to the recessed area to reduce the evaporation of the solution due to the wind force, which would increase the viscosity and make it difficult for the solution to flow out of the recessed area.

[0016] Optionally, the reagent rinsing method further includes: Step 213: Determine the spraying range based on the blowing instruction; Step 214: Calculate the uniform distance and non-uniform distance from the thickness center to the spraying range based on the spraying range and thickness center, and extract the non-uniform points from the spraying range based on the non-uniform distance; Step 215: Calculate the uniform difference by combining the uniform distance and the non-uniform distance, and determine the blowing direction based on the non-uniform point; Step 216: Select the tilt angle of the airflow based on the uniform difference and the airflow direction; Step 217: Update the blowing process command in response to the tilt angle.

[0017] By adopting the above technical solution, the uneven distance is calculated based on the distance between the spray range and the center of the thickness. Then, the uneven points are extracted from the spray range based on the uneven distance. The uneven points are used to accurately identify the location of uneven residual thickness on the curved surface. By adjusting the blowing direction and angle, the solution is made to flow evenly on the curved surface, thereby improving the flatness and consistency of the paint surface.

[0018] Optionally, it also includes a drying process, the drying process comprising: Step 300: Update the surface information based on the blowing treatment command and analyze the solution thickness after blowing; Step 301: When the solution thickness is greater than the preset residual thickness, calculate the difference between the solution thickness and the preset residual thickness, and define it as the thickness difference value; Step 302: Determine the drying time based on the thickness difference, and determine the drying position according to the thickness difference; Step 303: Generate and send a drying command in response to the drying time and drying location.

[0019] By adopting the above technical solution, the solution thickness is analyzed based on the surface information after air blowing, and the drying time and position are determined accordingly. This directly links the drying parameters with the real-time residual liquid film thickness, reducing the situation of water stains due to insufficient drying or thermal stress damage caused by excessive drying, and realizing on-demand control and precise triggering of the drying process.

[0020] Optionally, the drying method further includes: Step 304: Determine the equal thickness boundary and the standard thickness boundary based on the thickness difference; Step 305: Extract uniform intersection points based on the standard thickness boundary, and determine the influence range based on the uniform intersection points; Step 306: Determine the intersection point of influence by combining the standard thickness boundary and the influence range, and determine the center line by combining the uniform intersection point and the thickness center; Step 307: Determine the drying intersection point by combining the influence range and the center line, and define the influence intersection point and the drying intersection point as the secondary intersection point; Step 308: Determine the secondary range based on the secondary intersection points, and update the secondary intersection points based on the secondary range; Step 309: Update the drying position based on the secondary intersection.

[0021] By adopting the above technical solution, the equal thickness boundary is determined based on the thickness difference and the standard thickness boundary is extracted. Secondary intersection points and secondary ranges are determined through geometric analysis such as uniform intersection points, influence intersection points and center lines, and then the drying position is updated. This transforms the geometric characteristics of the residual liquid film distribution into drying position optimization parameters, thereby improving the uniformity of drying.

[0022] Optionally, the drying method further includes: Step 310: Determine the distribution thickness boundary in response to the secondary intersection and the uniform intersection; Step 311: Select the outer thickness boundary according to the distributed thickness boundary; Step 312: Extract the intersection points of equal thickness based on the outer thickness boundary; Step 313: Determine the included angle between adjacent intersection points based on the equal thickness intersection points; Step 314: Select the largest angle from the included angles as the representative angle; Step 315: Calculate the offset angle based on the representative angle, and update the distribution thickness boundary based on the outer thickness boundary; Step 316: Calculate the total angle based on the aforementioned offset angle; Step 317: Adjust the drying position in response to the sum of the angles.

[0023] By adopting the above technical solution, the distribution thickness boundary is determined based on the analysis of secondary intersection points and uniform intersection points. Then, the outer thickness boundary is extracted from the distribution thickness boundary. The equal thickness intersection points are determined through the outer thickness boundary and the influence range. The maximum included angle formed by adjacent equal thickness intersection points and the thickness center is selected as the representative angle. The offset angle is then calculated based on the representative angle. The adjustment angle is calculated based on the offset angle to adjust the drying position, thereby reducing the repeated covering of the drying area and improving the drying efficiency.

[0024] Secondly, this application provides a cleaning system suitable for silicon-wrapped plating in crystalline silicon solar cells, employing the following technical solution: A cleaning system suitable for silicon-wrapped plating in crystalline silicon solar cells, comprising: The acquisition module is used to acquire battery images and reflection images; A memory for storing the program of any of the above-mentioned cleaning methods applicable to silicon-wound plating of crystalline silicon cells; The processor is the unit of memory that allows programs to be loaded and executed by the processor.

[0025] By adopting the above technical solution, the thickness of the silicon coating is inverted by the grayscale of the reflected image, and the minimum thickness of the silicon coating is used to match the alkaline cleaning dosage for the protection thickness. This reduces the over-etching of the silicon substrate and the effective film layer, enabling precise cleaning of the silicon coating as needed and improving the efficiency of silicon coating removal.

[0026] In summary, this application includes at least one of the following beneficial technical effects: 1. By inverting the grayscale of the reflected image to determine the winding plating thickness, and using the minimum winding plating thickness as the protection thickness to match the alkaline cleaning dosage, the over-etching of the silicon substrate and the effective film layer is reduced, thereby achieving precise cleaning of the winding plating on demand and improving the efficiency of winding plating removal.

[0027] 2. By quantifying the thickness, center, range, and volume of residual plating, the removal dosage for localized residues can be accurately determined, thereby enabling secondary and precise removal of any localized residues that may exist after alkaline washing, reducing the problem of excessively thick residues caused by uneven plating thickness.

[0028] 3. The total dosage is determined by combining the alkaline washing dosage and the residual removal dosage, and the corresponding rinsing solution volume is matched. The rinsing process is planned based on the center of the battery, so that the rinsing solution can evenly cover the battery surface and remove residual alkaline solution, thereby reducing the damage to the battery caused by residual agents. Attached Figure Description

[0029] Figure 1 This is a flowchart of a cleaning method suitable for silicon-wound plating in crystalline silicon solar cells; Figure 2 This is a flowchart of the reagent rinsing method; Figure 3 This is a flowchart of the drying process. Detailed Implementation

[0030] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the invention.

[0031] This invention provides a cleaning method suitable for silicon-coated crystalline silicon solar cells.

[0032] Reference Figure 1 A cleaning method suitable for silicon-wound plating in crystalline silicon solar cells, comprising: Step 100: Acquire battery image.

[0033] A battery image refers to a photograph of a crystalline silicon battery to be cleaned. The crystalline silicon battery to be cleaned can be transported via a chain system to trigger an industrial camera to capture an overall image of the battery. The method of acquiring the battery image is selected by the staff based on the actual situation.

[0034] Step 101: Identify the irradiation direction from the battery image.

[0035] The irradiation direction refers to the direction of the light emitted to detect the distribution of silicon coating on the surface of a crystalline silicon cell, that is, the direction of irradiation toward the front and sides of the crystalline silicon cell. The front and side directions of the crystalline silicon cell can be identified as the irradiation direction through image recognition technology.

[0036] Step 102: In response to the illumination direction, generate and send a battery illumination command, and acquire a reflection image.

[0037] A battery irradiation command is a control signal that controls a light source to irradiate a crystalline silicon cell in an irradiation direction. The method for generating a battery irradiation command is common knowledge to those skilled in the art.

[0038] A reflected image is a battery image that has been retaken after adjusting the direction of the light source. The silicon-plated area in the reflected image exhibits obvious reflection characteristics due to differences in surface smoothness. Reflected images can be captured using an industrial camera, and the method of acquiring the reflected images is selected by the staff based on the actual situation.

[0039] Step 103: Identify the battery grayscale from the reflected image.

[0040] Battery grayscale refers to the grayscale value of each pixel in a reflected image, reflecting the intensity of light reflection on the battery surface. The RGB color reflected image is converted into a grayscale image through image processing technology, and the grayscale value of each point is read as the battery grayscale. The method of battery grayscale identification is common knowledge to those in the field.

[0041] Step 104: Determine the coating thickness based on the battery grayscale.

[0042] The coating thickness refers to the thickness of the silicon layer deposited at the edge of a crystalline silicon cell due to the coating phenomenon. The larger the cell grayscale, the smaller the coating thickness. The coating thickness corresponding to the cell grayscale can be found in the thickness correspondence table, which is a data table that records different cell grayscales and their corresponding coating thicknesses.

[0043] Step 105: Select the minimum value from the above-mentioned coating thicknesses as the protective thickness.

[0044] Protective thickness refers to the maximum silicon layer thickness that can be removed without damaging the crystalline silicon cell; protective thickness is the minimum value among the winding thicknesses.

[0045] Step 106: Select the alkaline washing dosage according to the protection thickness.

[0046] Alkali washing dosage refers to the volume of alkaline reagent sprayed to remove the protective silicon layer. The larger the protective thickness, the larger the alkali washing dosage is required. The alkali washing dosage corresponding to the protective thickness can be found in the dosage correspondence table, which is a data table that records different protective thicknesses and their corresponding alkali washing dosages.

[0047] Step 107: In response to the generation of the alkaline wash dosage, send the wrap-around alkaline wash command.

[0048] The alkali cleaning command for plating refers to the command that controls the spray system to spray an appropriate amount of alkaline reagent onto the front and sides of the crystalline silicon cell. The method for generating the alkali cleaning command for plating is common knowledge to those skilled in the art.

[0049] By inverting the grayscale of the reflected image to determine the winding plating thickness, and using the minimum winding plating thickness as the protection thickness to match the alkaline cleaning dosage, the over-etching of the silicon substrate and the effective film layer is reduced, thereby achieving precise cleaning of the winding plating on demand and improving the efficiency of winding plating removal.

[0050] A cleaning method suitable for silicon-wound plating in crystalline silicon solar cells further includes: Step 108: Calculate the difference between the plating thickness and the protective thickness, and define it as the residual thickness.

[0051] Residual thickness refers to the thickness of the silicon layer at different locations on a crystalline silicon solar cell after the alkali washing instruction.

[0052] Step 109: Analyze the residual thickness to determine the residual center.

[0053] The residual center refers to the geometric center of the region with the maximum residual thickness, which can be obtained by calculating the centroid of the residual thickness distribution. The method for calculating the residual center is common knowledge to those in the field.

[0054] Step 110: Determine the residual range based on the residual center.

[0055] The residual range refers to the continuous silicon-plated region where the residual center is located. Generally, starting from the residual center, a region growth algorithm is used to include sampling points with a residual thickness greater than 0.1 μm that are connected to the center point into the residual range, thus forming the residual range.

[0056] Step 111: Determine the residual volume by combining the residual range and residual thickness.

[0057] The residual volume refers to the total volume of silicon-plated material within the residual range. The residual volume can be obtained by integrating the residual thickness of all sampling points within the residual range.

[0058] Step 112: Determine the removal dose based on the residual volume.

[0059] The removal dose refers to the amount of alkali solution required for secondary cleaning of the residual area. It is directly proportional to the residual volume. The removal dose corresponding to the residual volume can be found in the removal correspondence table, which is a data table that records different residual volumes and their corresponding removal doses.

[0060] Step 113: In response to the residual center and removal dose, generate and send a plating cleaning command.

[0061] The winding plating cleaning command refers to the command that controls the spray system to sequentially spray a removal dose of alkaline reagent onto the residual center. The method for generating the winding plating cleaning command is common knowledge to those skilled in the art.

[0062] By quantifying the thickness, center, range, and volume of residual plating, the removal dosage for localized residues can be precisely determined, thereby enabling secondary and precise removal of any remaining residues that may exist after alkaline washing, reducing the problem of excessively thick residues caused by uneven plating thickness.

[0063] A cleaning method suitable for silicon-wound plating in crystalline silicon solar cells further includes: Step 114: Determine the total dose by combining the removal dose and the alkaline washing dose.

[0064] The total dosage refers to the total amount of alkaline reagents used in the entire cleaning process, that is, the sum of the alkaline washing dosage and the removal dosage.

[0065] Step 115: Determine the amount of rinsing solution based on the total dosage, and identify the center of the battery from the battery image.

[0066] The amount of rinsing solution refers to the volume of pure water required to neutralize and clean residual alkaline reagents. The larger the total dosage, the larger the amount of rinsing solution is required. The amount of rinsing solution corresponding to the total dosage can be found in the rinsing solution correspondence table, which is a data table that records different total dosages and their corresponding amounts of rinsing solution.

[0067] The battery center refers to the geometric center of the front of a crystalline silicon battery. The battery center can be identified from the battery image using image recognition technology. The method for identifying the battery center is common knowledge to those in the field.

[0068] Step 116: Generate a rinsing cycle by combining the amount of rinsing solution and the center of the battery.

[0069] The rinsing stroke refers to the path by which the nozzle evenly covers the front of the crystalline silicon cell with pure water, that is, to form a uniform coverage path with the center of the cell as the reference. The method of generating the rinsing stroke is common knowledge to those skilled in the art.

[0070] Step 117: In response to the rinsing cycle, generate and send a battery rinsing command.

[0071] The battery rinse command is a command that controls the nozzles in the spray system to spray pure water according to the rinsing stroke. The method of generating the battery rinse command is common knowledge to those skilled in the art.

[0072] The total dosage is determined by combining the alkaline washing dosage and the residual removal dosage, and the corresponding rinsing solution volume is matched. The rinsing process is planned based on the center of the battery, so that the rinsing solution can evenly cover the battery surface and remove residual alkaline solution, thereby reducing the damage of residual agents to the battery.

[0073] Reference Figure 2 The reagent rinsing methods include: Step 200: Determine surface information from the battery image.

[0074] Surface information refers to the visual information presented by the shape, angle, etc. of the surface of a crystalline silicon cell. Surface information can be identified from the surface of a crystalline silicon cell using image recognition technology. The method for determining surface information is common knowledge to those in the field.

[0075] Step 201: Identify the surface range of the crystalline silicon cell from the surface information.

[0076] The curved area refers to the region on the surface of a crystalline silicon cell that has a curved shape. The area with a non-zero angle can be extracted from the surface information as the curved area. The method for identifying the curved area is common knowledge to those in the field.

[0077] Step 202: Determine the highest point of the surface based on the surface range, and determine the spraying ratio based on the highest point of the surface.

[0078] The highest point of a surface refers to the highest geometric point in the vertical direction within the surface range. The highest point within each surface range can be extracted as the highest point of the surface. The method for identifying the highest point of a surface is common knowledge to those in the field.

[0079] The spray ratio refers to the spray distribution ratio for different curved surface ranges. The higher the height of the highest point of the curved surface, the larger the spray ratio is. The height of the highest point of the curved surface can be extracted from the surface information, and the distribution coefficient corresponding to the height of the curved surface can be found from the distribution correspondence table. Then, the ratio of different distribution coefficients is calculated as the spray ratio.

[0080] Step 203: Determine the spray volume based on the spray ratio and rinsing liquid volume.

[0081] The spray volume refers to the volume of pure water that needs to be sprayed within different curved surfaces. It is calculated by multiplying the spray ratio and the amount of rinsing liquid.

[0082] Step 204: Update the battery rinsing command in response to the spray volume and the highest point of the surface, and determine the surface angle according to the surface range.

[0083] The surface angle refers to the spatial angle between the surface of a crystalline silicon cell and the horizontal direction within the surface range. The angle value at each position within the surface range can be extracted from the surface information as the surface angle.

[0084] Step 205: Calculate the spray thickness by combining the spray volume and the surface angle, and determine the vertical wind force and the thickness center based on the spray thickness.

[0085] Spray thickness refers to the actual thickness of the solution formed by pure water and alkaline reagent on the curved surface. The surface velocity corresponding to the spray volume and the curved surface angle can be found from the velocity correspondence table. Then, a solution flow model is constructed according to the surface velocity, and the spray thickness is calculated according to the solution flow model. The velocity correspondence table is a data table that records different spray volumes and curved surface angles and their corresponding surface velocities.

[0086] Vertical wind force refers to the vertical wind force required to drive the flow of a sprayed solution of a certain thickness. The greater the spray thickness, the greater the required vertical wind force. A vertical wind force correspondence table can be used to look up the vertical wind force corresponding to different thickness differences. This table records data on different thickness differences and their corresponding vertical wind forces. The thickness center is the geometric center of the liquid film thickness distribution, which can be obtained by calculating the centroid of the spray thickness distribution. The method for calculating the thickness center is common knowledge to those skilled in the art.

[0087] Step 206: In response to the vertical wind force and thickness center, generate and send a blowing processing command.

[0088] A blower is a device used to blow air onto crystalline silicon cells to drive the solution on the cells to flow. The selection of the blower is made by the operator based on the actual situation. A blower processing command is a command to control the blower to blow air vertically towards the center of the thickness. The method for generating blower processing commands is common knowledge to those skilled in the art.

[0089] When there is a curved surface on the crystalline silicon cell, the rinsing solution is difficult to rinse the crystalline silicon cell evenly. By identifying the range, angle and highest point of the curved surface, the precise spray ratio, volume and vertical wind force are matched to achieve uniform spraying of the rinsing solution, reducing the problem of uneven cleaning of the curved surface. At the same time, the blowing treatment accelerates the liquid flow speed to remove the solution from the surface of the crystalline silicon cell.

[0090] Reagent rinsing methods also include: Step 207: Identify the recessed range of the crystalline silicon cell based on the surface angle, and extract the recessed volume and recessed angle based on the recessed range.

[0091] The recessed area refers to the inward-recessed area on the surface of a crystalline silicon solar cell that is prone to liquid accumulation. It is identified based on the surface angle and height difference. The method for identifying the recessed area is common knowledge to those in the field.

[0092] The depression volume refers to the volume of solution accumulated in the depression area. The depression volume can be determined by the solution flow model. The depression angle refers to the inclination angle of the depression sidewall. The depression angle can be extracted from the surface information.

[0093] Step 208: Determine the moving wind force based on the concave volume, and determine the flow direction based on the curved surface angle.

[0094] Moving wind power refers to the wind force required to blow the solution out of the depression area. The larger the depression volume, the greater the moving wind power required. The moving wind power corresponding to the depression volume can be found by looking up the moving wind power correspondence table, which is a data table that records different depression volumes and their corresponding moving wind power.

[0095] The flow direction refers to the direction in which the solution flows along the surface of a crystalline silicon solar cell under the influence of gravity, and can be determined by a solution flow model.

[0096] Step 209: Determine the flow wind force by combining the flow direction and the concave angle.

[0097] The flow wind force refers to the wind force required to drive the solution in the depression area to continue flowing in the flow direction. The difference between the flow direction and the depression angle can be calculated as the obstruction angle. The larger the obstruction angle, the greater the flow wind force required. The flow wind force corresponding to different obstruction angles can be found by looking up the flow wind force correspondence table, which is a data table that records different obstruction angles and their corresponding flow wind forces.

[0098] Step 210: Calculate the final wind force and final angle by combining the moving wind force and the flowing wind force.

[0099] The final wind force refers to the resultant force of the moving wind force and the flowing wind force, and the final angle refers to the angle of the resultant force of the final wind force. The moving wind force and the flowing wind force can be converted into vectors. The direction of the vector is the direction of the wind force, and the magnitude of the vector is the magnitude of the wind force. The direction of the moving wind force is vertically downward, and the direction of the flowing wind force is the direction of flow. The calculation methods of the final angle and the final wind force are common knowledge known to those in the field.

[0100] Step 211: Generate and send a blowing adjustment command based on the final wind force and final angle, and determine the spray addition amount according to the final wind force and spray thickness.

[0101] The blowing adjustment command is a command that controls the blowing equipment to blow air onto the recessed area according to the final wind force and final angle. The method of generating the blowing adjustment command is common knowledge to those skilled in the art.

[0102] The spray addition amount is the volume of pure water added to ensure the fluidity of the solution. The solution contains alkaline reagents and pure water. When air is blown into the solution through a blower, the pure water in the solution evaporates, causing the alkalinity and viscosity of the solution to increase simultaneously, resulting in the solution being difficult to flow. Ultimately, the greater the wind force and the smaller the spray thickness, the greater the spray addition amount is required. The spray addition amount correspondence table can be used to look up the corresponding spray addition amount for different final wind forces and spray thicknesses. The spray addition amount correspondence table is a data table that records different final wind forces and spray thicknesses and their corresponding spray addition amounts.

[0103] Step 212: In response to the depression range and spray amount, generate and send a rinsing add command.

[0104] The rinse-addition command refers to the command that controls the spraying system to spray pure water into the depression area according to the spray addition amount while executing the air blowing adjustment command. The method of generating the rinse-addition command is common knowledge to those skilled in the art.

[0105] When there are recessed areas in a crystalline silicon solar cell, the solution cannot flow in the recessed area. At this time, the angle and speed of the air blower are adjusted to drive the solution out of the recessed area. Rinsing solution is added to the recessed area to reduce the evaporation of the solution due to the wind force, which increases the viscosity and makes it difficult for the solution to flow out of the recessed area.

[0106] It also includes a method for adjusting the airflow direction, the method comprising: Step 213: Determine the spraying range based on the blowing instructions.

[0107] The spray range refers to the shape of the solution on the surface of the crystalline silicon cell under the action of wind. The spray range can be identified from the cell image after the blowing treatment command using image recognition technology. The method for identifying the spray range is common knowledge to those in the field.

[0108] Step 214: Calculate the uniform distance and non-uniform distance from the thickness center to the spraying range based on the spraying range and thickness center, and extract the non-uniform points from the spraying range based on the non-uniform distance.

[0109] Uniform distance refers to the maximum distance between the boundary of the spray range and the center of the thickness. The uniform distance shows the flow of the solution in the direction where it is easiest to flow. Non-uniform distance refers to the minimum distance between the boundary of the spray range and the center of the thickness. The non-uniform distance shows the flow of the solution in the direction where it is most difficult to flow. Non-uniform point refers to the position of the non-uniform distance on the outline of the spray range. The methods for determining uniform distance, non-uniform distance and non-uniform point are common knowledge to those skilled in the art.

[0110] Step 215: Calculate the uniform difference by combining the uniform distance and the non-uniform distance, and determine the blowing direction based on the non-uniform point.

[0111] The uniformity difference is a data point used to represent the non-uniformity of solution flow. It can be calculated as the difference between the uniform distance and the non-uniform distance.

[0112] The blowing direction refers to the direction in which the solution is blown towards the non-uniform point, that is, from the center of the thickness to the non-uniform point.

[0113] Step 216: Select the tilt angle of the airflow based on the uniform difference and the airflow direction.

[0114] The tilt angle refers to the angle required to drive the solution flow towards the uneven point by the blowing equipment. The larger the uniformity difference, the more the blowing direction needs to be horizontal to accelerate the solution flow. The adjustment angle corresponding to the uniformity difference can be found from the tilt angle correspondence table. Then, the sum of the adjustment angle and the original blowing direction is calculated as the tilt angle. The tilt angle is then used as the new blowing direction to update the blowing processing command. The tilt angle correspondence table is a data table that records different uniformity differences and their corresponding adjustment angles.

[0115] Step 217: Update the blowing process command in response to the tilt angle.

[0116] The uneven distance is calculated based on the distance between the center of the spray range and the thickness. Then, uneven points are extracted from the spray range based on the uneven distance. The location of uneven residual thickness on the curved surface is accurately identified by the uneven points. By adjusting the blowing direction and angle, the solution is made to flow evenly on the curved surface, thereby improving the smoothness and consistency of the paint surface.

[0117] Reference Figure 3 Drying methods include: Step 300: Update the surface information based on the blowing treatment command and analyze the solution thickness after blowing.

[0118] Solution thickness refers to the actual thickness of the solution on the surface of the crystalline silicon cell after the blowing treatment. The solution thickness can be extracted from the surface information updated after the blowing treatment command is executed. The method for extracting solution thickness is common knowledge to those skilled in the art.

[0119] Step 301: When the solution thickness is greater than the preset residual thickness, calculate the difference between the solution thickness and the preset residual thickness, and define it as the thickness difference value.

[0120] Residual thickness refers to the maximum residual liquid film thickness allowed by the process. The residual thickness is selected by the staff according to the actual situation. If the solution thickness is greater than the residual thickness, it means that there is too much residual liquid on the surface of the crystalline silicon cell. The thickness difference is a value used to represent the drying requirements of various parts of the crystalline silicon cell surface. The more residual liquid, the more drying is required.

[0121] Step 302: Determine the drying time based on the thickness difference, and determine the drying position according to the thickness difference.

[0122] Drying equipment refers to equipment used to heat the surface of crystalline silicon cells to drive the evaporation of residual liquid. Generally, electric heating wires controlled by robotic arms are used as drying equipment, and the drying equipment is selected by the staff according to the actual situation.

[0123] Drying time refers to the minimum time required for the residual liquid to evaporate using drying equipment. The larger the thickness difference, the longer the drying time is required. The drying time corresponding to the thickness difference can be found by looking up the drying time correspondence table, which is a data table that records different thickness differences and their corresponding drying times.

[0124] The drying location refers to the location on the surface of the crystalline silicon cell that needs to be dried. The drying location is the location corresponding to the thickness difference. The method for determining the drying location is selected by the staff based on the actual situation.

[0125] Step 303: Generate and send a drying command in response to the drying time and drying location.

[0126] A drying command is a command that controls the drying equipment to continuously heat and dry at the drying position for a specific duration. The method for generating drying commands is common knowledge to those skilled in the art.

[0127] Based on the surface information after air blowing, the solution thickness is analyzed, and the drying time and location are determined accordingly. This directly links the drying parameters with the real-time residual liquid film thickness, reducing the possibility of water stains due to insufficient drying or thermal stress damage due to over-drying, and enabling on-demand control and precise triggering of the drying process.

[0128] It also includes methods for adjusting the drying position, which include: Step 304: Determine the equal thickness boundary and the standard thickness boundary based on the thickness difference.

[0129] Equal thickness boundaries refer to the contour lines formed by thickness positions with the same thickness difference. It is possible to identify adjacent positions with the same thickness difference and then connect these positions to form equal thickness boundaries. Different thickness differences correspond to different equal thickness boundaries. The method for determining equal thickness boundaries is selected by the staff based on the actual situation.

[0130] The standard thickness boundary refers to the outermost boundary among all equal thickness boundaries, that is, the equal thickness boundary corresponding to a thickness difference of 0.

[0131] Step 305: Extract uniform intersection points based on the standard thickness boundary, and determine the influence range based on the uniform intersection points.

[0132] The uniform intersection point refers to the position on the boundary of the standard thickness that is farthest from the center of the thickness. The method for extracting the uniform intersection point is selected by the staff according to the actual situation.

[0133] The influence range refers to the area affected by the drying equipment when drying at the uniform intersection point. It is a circular area formed with the uniform intersection point as the center and the influence radius as the radius. The influence radius refers to the farthest effective drying distance of the drying equipment, which can be preset by the staff according to the working parameters of the drying equipment.

[0134] Step 306: Determine the intersection point of influence by combining the standard thickness boundary and the influence range, and determine the center line by combining the uniform intersection point and the thickness center.

[0135] The point of impact refers to the two points where the scope of impact intersects with the boundary of the thickness that meets the standard. The method for determining the point of impact is selected by the staff based on the actual situation.

[0136] The center line refers to the line connecting the center of the thickness with the intersection point of the uniform thickness. The method for determining the center line is selected by the staff based on the actual situation.

[0137] Step 307: Determine the drying intersection point by combining the influence range and the center line, and define the influence intersection point and the drying intersection point as the secondary intersection point.

[0138] The drying intersection point refers to the intersection of the line connecting the affected area and the center. The selection of the drying intersection point is made by the staff based on the actual situation.

[0139] The secondary intersection point refers to the location used to calibrate the effective drying range of the drying equipment at the starting position.

[0140] Step 308: Determine the secondary range based on the secondary intersection point, and update the secondary intersection point based on the secondary range.

[0141] The secondary range refers to the range of influence that does not overlap with the range of influence. A circular area with the radius of influence formed by the straight-line distance between the secondary intersection points and the corresponding equal-thickness boundary can be selected as the center. Similarly, a circular area with the radius of influence formed by the straight-line distance between the secondary intersection points and the center line can be selected as the center. The intersection points of the secondary range with the center line and the corresponding equal-thickness boundary can be used as new secondary intersection points. When there is an overlap between the secondary range and the range of influence, the secondary intersection points are used as drying locations. The method for generating the secondary range is selected by the staff based on the actual situation.

[0142] Step 309: Update the drying position based on the secondary intersection.

[0143] Based on the thickness difference, the equal thickness boundary is determined and the standard thickness boundary is extracted. Through geometric analysis such as uniform intersection points, influence intersection points, and center lines, secondary intersection points and secondary ranges are determined, and the drying position is updated. Thus, the geometric characteristics of the residual liquid film distribution are transformed into drying position optimization parameters, thereby improving the uniformity of drying.

[0144] The drying position adjustment method also includes: Step 310: Determine the distribution thickness boundary in response to the secondary intersection and the uniform intersection.

[0145] The distributed thickness boundary refers to the equal thickness boundary where secondary intersections and uniform intersections are located. The method for determining the distributed thickness boundary is selected by the staff based on the actual situation.

[0146] Step 311: Select the outer thickness boundary according to the distributed thickness boundary.

[0147] The outer thickness boundary refers to the outermost distribution thickness boundary. The method for determining the outer thickness boundary is selected by the staff based on the actual situation.

[0148] Step 312: Extract the intersection points of equal thickness based on the outer thickness boundary.

[0149] Equal thickness intersections refer to secondary intersections and / or uniform intersections located on the outer thickness boundary. The method for extracting equal thickness intersections is selected by the staff based on the actual situation.

[0150] Step 313: Determine the included angle between adjacent intersection points based on the equal thickness intersection points.

[0151] The included angle refers to the angle formed between two adjacent points of equal thickness and the center of thickness. That is, by connecting two adjacent points of equal thickness and the center of thickness, the included angle is formed from the point of equal thickness to the center of thickness and then to the adjacent points of equal thickness. The method for determining the included angle is selected by the staff according to the actual situation.

[0152] Step 314: Select the largest angle from the included angles as the representative angle.

[0153] The representative angle refers to the largest included angle, and the method for determining the representative angle is selected by the staff based on the actual situation.

[0154] Step 315: Calculate the offset angle based on the representative angle, and update the distribution thickness boundary based on the outer thickness boundary.

[0155] The offset angle refers to the minimum angle required to reduce the gap in the drying range, including the rotational influence range and / or secondary range. Half of the representative angle can be used as the offset angle. Whenever the offset angle corresponding to the outer thickness boundary is calculated, the outer thickness boundary is removed from the distributed thickness boundary to continue calculating the offset angle until there is no outer thickness boundary. The method for calculating the offset angle is selected by the staff according to the actual situation.

[0156] Step 316: Calculate the total angle based on the offset angle.

[0157] The total angle refers to the actual angle value required to make the secondary range on the same thickness boundary deviate from the secondary range and / or influence range on the outer thickness boundary by an offset angle. That is, it is to calculate the sum of the offset angles corresponding to all equal thickness boundaries located outside the target thickness boundary. For example, there are four equal thickness boundaries A, B, C and D with secondary intersection points and influence intersection points distributed sequentially from the thickness center to the target thickness boundary. D is the target thickness boundary, and its corresponding offset angles are b, c and d respectively. Then the total angle corresponding to D is b+c+d, and the total angle corresponding to C is b+c. Thus, the drying position is adjusted sequentially from the outside to the inside according to the total angle. The calculation method of the total angle is selected by the staff according to the actual situation.

[0158] Step 317: Adjust the drying position in response to the sum of the angles.

[0159] The distribution thickness boundary is determined by analyzing the secondary and uniform intersections. Then, the outer thickness boundary is extracted from the distribution thickness boundary. The equal thickness intersections are determined by the outer thickness boundary and the influence range. The maximum included angle formed by adjacent equal thickness intersections and the thickness center is selected as the representative angle. The offset angle is then calculated based on the representative angle. The adjustment angle is then calculated based on the offset angle to adjust the drying position, thereby reducing the repeated covering of the drying area and improving the drying efficiency.

[0160] Based on the same inventive concept, embodiments of the present invention provide a cleaning system suitable for silicon-wrapped plating in crystalline silicon solar cells, comprising: The acquisition module is used to acquire battery images and reflection images; A memory for storing the program of any of the above-mentioned cleaning methods applicable to silicon-wound plating of crystalline silicon cells; The processor is the unit of memory that allows programs to be loaded and executed by the processor.

[0161] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional modules is used as an example. In practical applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above. The specific working process of the system, device, and unit described above can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0162] The above description is merely a preferred embodiment of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principles of the present invention should also be considered within the scope of protection of the present invention.

Claims

1. A cleaning method suitable for silicon-coated crystalline silicon solar cells, characterized in that, include: Step 100: Acquire battery image; Step 101: Identify the irradiation direction from the battery image; Step 102: In response to the illumination direction, generate and send a battery illumination command, and acquire a reflection image; Step 103: Identify the battery grayscale from the reflected image; Step 104: Determine the coating thickness based on the battery grayscale; Step 105: Select the minimum value from the aforementioned coating thicknesses as the protective thickness; Step 106: Select the alkaline washing dosage according to the stated protective thickness; Step 107: In response to the generation of the alkaline wash dosage, send the wrap-around alkaline wash command.

2. The cleaning method for silicon-coated crystalline silicon solar cells according to claim 1, characterized in that, Also includes: Step 108: Calculate the difference between the plating thickness and the protective thickness, and define it as the residual thickness; Step 109: Analyze the residual thickness to determine the residual center; Step 110: Determine the residual range based on the residual center; Step 111: Determine the residual volume by combining the residual range and residual thickness; Step 112: Determine the removal dose based on the residual volume; Step 113: In response to the residual center and removal dose, generate and send a plating cleaning command.

3. The cleaning method for silicon-coated crystalline silicon solar cells according to claim 2, characterized in that, Also includes: Step 114: Determine the total dose by combining the removal dose and the alkaline washing dose; Step 115: Determine the amount of rinsing solution based on the total dosage, and identify the center of the battery from the battery image; Step 116: Generate a rinsing cycle by combining the amount of rinsing solution and the center of the battery; Step 117: In response to the rinsing cycle, generate and send a battery rinsing command.

4. The cleaning method for silicon-coated crystalline silicon solar cells according to claim 3, characterized in that, It also includes a reagent rinsing method, which includes: Step 200: Determine surface information from the battery image; Step 201: Identify the surface curvature of the crystalline silicon solar cell from the surface information; Step 202: Determine the highest point of the surface based on the surface range, and generate and send a solution spraying command based on the highest point of the surface; Step 203: Determine the spray volume based on the spray ratio and rinsing solution volume; Step 204: Update the battery rinsing command in response to the spray volume and the highest point of the surface, and determine the surface angle according to the surface range; Step 205: Calculate the spray thickness based on the spray volume and surface angle, and determine the vertical wind force and thickness center based on the spray thickness; Step 206: In response to the vertical wind force and thickness center, generate and send a blowing processing command.

5. A cleaning method for silicon-coated crystalline silicon solar cells according to claim 4, characterized in that, The reagent rinsing method further includes: Step 207: Identify the recessed range of the crystalline silicon cell based on the surface angle, and extract the recessed volume and recessed angle based on the recessed range; Step 208: Determine the moving wind force based on the concave volume, and determine the flow direction based on the curved surface angle; Step 209: Determine the flow wind force by combining the flow direction and the concave angle; Step 210: Calculate the final wind force and final angle by combining the moving wind force and the flowing wind force; Step 211: Generate and send a blowing adjustment command based on the final wind force and final angle, and determine the spray addition amount according to the final wind force and spray thickness; Step 212: In response to the depression range and spray amount, generate and send a rinsing add command.

6. A cleaning method for silicon-coated crystalline silicon solar cells according to claim 4, characterized in that, The reagent rinsing method further includes: Step 213: Determine the spraying range based on the blowing instruction; Step 214: Calculate the uniform distance and non-uniform distance from the thickness center to the spraying range based on the spraying range and thickness center, and extract the non-uniform points from the spraying range based on the non-uniform distance; Step 215: Calculate the uniform difference by combining the uniform distance and the non-uniform distance, and determine the blowing direction based on the non-uniform point; Step 216: Select the tilt angle of the airflow based on the uniform difference and the airflow direction; Step 217: Update the blowing process command in response to the tilt angle.

7. A cleaning method for silicon-coated crystalline silicon solar cells according to claim 6, characterized in that, It also includes a drying process, the drying process comprising: Step 300: Update the surface information based on the blowing treatment command and analyze the solution thickness after blowing; Step 301: When the solution thickness is greater than the preset residual thickness, calculate the difference between the solution thickness and the preset residual thickness, and define it as the thickness difference value; Step 302: Determine the drying time based on the thickness difference, and determine the drying position according to the thickness difference; Step 303: Generate and send a drying command in response to the drying time and drying location.

8. A cleaning method for silicon-coated crystalline silicon solar cells according to claim 7, characterized in that, The drying method further includes: Step 304: Determine the equal thickness boundary and the standard thickness boundary based on the thickness difference; Step 305: Extract uniform intersection points based on the standard thickness boundary, and determine the influence range based on the uniform intersection points; Step 306: Determine the intersection point of influence by combining the standard thickness boundary and the influence range, and determine the center line by combining the uniform intersection point and the thickness center; Step 307: Determine the drying intersection point by combining the influence range and the center line, and define the influence intersection point and the drying intersection point as the secondary intersection point; Step 308: Determine the secondary range based on the secondary intersection points, and update the secondary intersection points based on the secondary range; Step 309: Update the drying position based on the secondary intersection.

9. A cleaning method for silicon-coated crystalline silicon solar cells according to claim 8, characterized in that, The drying method further includes: Step 310: Determine the distribution thickness boundary in response to the secondary intersection and the uniform intersection; Step 311: Select the outer thickness boundary according to the distributed thickness boundary; Step 312: Extract the intersection points of equal thickness based on the outer thickness boundary; Step 313: Determine the included angle between adjacent intersection points based on the equal thickness intersection points; Step 314: Select the largest angle from the included angles as the representative angle; Step 315: Calculate the offset angle based on the representative angle, and update the distribution thickness boundary based on the outer thickness boundary; Step 316: Calculate the total angle based on the aforementioned offset angle; Step 317: Adjust the drying position in response to the sum of the angles.

10. A cleaning system suitable for silicon-wrapped plating in crystalline silicon solar cells, characterized in that, include: The acquisition module is used to acquire battery images and reflection images; A memory for storing a program of a cleaning method for silicon-wound plating of crystalline silicon cells as described in any one of claims 1 to 9; The processor is the unit of memory that allows programs to be loaded and executed by the processor.

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