High-voltage diode shell structure

Abstract

The utility model discloses a high-voltage diode tube shell structure, which comprises a tube shell, an insulating substrate is arranged at one end of the tube shell, a plurality of inner electrode plates which are arranged at intervals and are packaged on the insulating substrate in a surface-mounted manner are further arranged in the tube shell, and a plurality of outer electrode plates are packaged on one side, far away from the inner electrode plates, of the insulating substrate in a surface-mounted manner. The insulating substrate is also provided with a plurality of conductive through holes into which electric conductors are inserted; and the inner electrode plates and the outer electrode plates are electrically connected through the electric conductors. According to the high-voltage diode shell structure provided by the utility model, on the basis of the traditional surface-mounted packaging, the voltage withstanding design of the insulating substrate is matched, one end of the insulating substrate is provided with the plurality of inner electrode slices which are arranged at intervals, and the other end of the insulating substrate is provided with the plurality of conductive through holes which are communicated with the inner electrode slices and the outer electrode slices, so that the electrodes are led out; according to the utility model, the arrangement structure of the internal electrodes is optimized, the insulating and voltage-withstanding capability of the tube shell is effectively improved, compared with the existing product, the volume of the product is smaller, the low-pressure capability of the product is improved, and the tube shell structure with small volume and high voltage withstanding is realized.

Description

Technical Field

[0001] The utility model relates to the field of power semiconductors, in particular to a high-voltage diode tube shell structure. Background Art

[0002] At present, existing diodes are usually packaged in plastic or metal shell. Taking metal shell packaging as an example, it is usually divided into metal ceramic surface mount packaging, metal ceramic direct plug packaging, metal direct plug packaging, etc. The packaging structure includes single chip packaging and double chip packaging. The tube shell voltage resistance can meet the packaging requirements of 1200V products.

[0003] However, the existing diode metal shell packaging design is difficult to achieve high voltage resistance for high-voltage products above 1200V, especially products with voltage levels of 1700V or even higher. For products above 1200V, plastic packaging or module packaging is usually used to meet the voltage resistance requirements, which is large in size and difficult to achieve high reliability and safety.

[0004] In view of this, it is necessary to propose further improvements to the current structure. Utility Model Content

[0005] Therefore, the utility model aims to solve the deficiencies in the prior art to at least a certain extent, thereby proposing a high-voltage diode tube shell structure.

[0006] In order to achieve the above purpose, a technical solution adopted by the utility model is:

[0007] The utility model provides a high-voltage diode tube shell structure, comprising a tube shell, one end of the tube shell is provided with an insulating substrate, the tube shell also includes a plurality of inner electrode sheets which are arranged at intervals and surface-mounted on the insulating substrate, a side of the insulating substrate away from the inner electrode sheets is surface-mounted with a plurality of outer electrode sheets, the insulating substrate is also provided with a plurality of conductive through holes in which conductors are inserted, and the inner electrode sheets and the outer electrode sheets are electrically connected via the conductors.

[0008] Furthermore, the minimum distance between the plurality of inner electrode sheets is 1 mm; the minimum distance between the plurality of inner electrode sheets and the inner side wall of the tube shell is 1 mm.

[0009] Furthermore, the outer electrode sheet is abutted against the insulating substrate by surface mounting, and the height of the outer electrode sheet is 0.5-0.8 mm.

[0010] Furthermore, the insulating substrate is made of Si3N4 material.

[0011] Furthermore, the plurality of inner electrode sheets are surface-mounted on the insulating substrate by glue filling, and the withstand voltage value is greater than 5KV; the thickness of the insulating substrate is greater than 0.8mm, and the withstand voltage value is not less than 16KV.

[0012] Furthermore, the minimum value of the electrical gap between the plurality of conductors is 7.5 mm, and the withstand voltage is greater than 7.5 KV.

[0013] Furthermore, the minimum value of the creepage distance between the plurality of conductors is 4 mm, and the withstand voltage value is greater than 4 KV.

[0014] Furthermore, the withstand voltage of the tube shell is greater than 4KV.

[0015] Furthermore, a diode chip is arranged on a side of the inner electrode sheet away from the insulating substrate, and a plurality of the inner electrode sheets are electrically connected via aluminum wires.

[0016] Furthermore, the length of the insulating substrate is in the range of 14-18 mm, and the width of the insulating substrate is in the range of 10-14 mm.

[0017] The utility model provides a high-voltage diode tube shell structure, including a tube shell, an insulating substrate is arranged at one end of the tube shell, the tube shell also includes a plurality of inner electrode sheets arranged at intervals and surface-mounted on the insulating substrate, a plurality of outer electrode sheets are surface-mounted on the side of the insulating substrate away from the inner electrode sheets, and a plurality of conductive through holes with conductors inserted are also provided on the insulating substrate, and the inner electrode sheets and the outer electrode sheets are electrically connected through the conductors. The high-voltage diode tube shell structure provided by the utility model is based on the traditional surface-mount packaging and is matched with the voltage-resistant design of the insulating substrate. A plurality of inner electrode sheets arranged at intervals are arranged at one end of the insulating substrate, and a plurality of conductive through holes connecting the inner and outer electrode sheets are provided at the other end so that the electrodes are led out, which not only optimizes the arrangement structure of the internal electrodes, but also effectively improves the insulation voltage-resistant capacity of the tube shell. Compared with existing products, the product is smaller in size, and the low-pressure capacity of the product is increased, realizing a tube shell structure with a small volume and high voltage resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0019] Figure 1 It is a schematic diagram of the structural decomposition of the high-voltage diode shell structure of the utility model;

[0020] Figure 2 It is a schematic diagram of the overall structure of the high-voltage diode shell structure of the utility model;

[0021] Figure 3 It is a side structural diagram of the high-voltage diode shell structure of the utility model;

[0022] Figure 4 For the utility model along Figure 3 Cross-sectional view in the AA direction.

[0023] The reference numerals in the figure are as follows: 1, tube shell; 11, insulating substrate; 111, conductive through hole; 2, inner electrode sheet; 21, diode chip; 3, outer electrode sheet; 4, conductor; 5, aluminum wire. DETAILED DESCRIPTION

[0024] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0025] It should be noted that the descriptions of "first", "second", etc. in the present utility model are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present utility model.

[0026] Please refer to Figures 1 to 4 The utility model provides a high-voltage diode tube shell structure, including a tube shell 1, an insulating substrate 11 is arranged at one end of the tube shell 1, and the tube shell 1 also includes a plurality of inner electrode sheets 2 arranged at intervals and surface-mounted on the insulating substrate 11, and a plurality of outer electrode sheets 3 are surface-mounted on a side of the insulating substrate 11 away from the inner electrode sheets 2. A plurality of conductive through holes 111 in which conductors 4 are inserted are also opened on the insulating substrate 11, and the inner electrode sheets 2 and the outer electrode sheets 3 are electrically connected through the conductors 4.

[0027] In this embodiment, the high-voltage diode tube shell structure includes a tube shell 1, an insulating substrate 11 is provided at one end of the tube shell 1, and a plurality of inner electrode sheets 2 are arranged at intervals in the tube shell 1, wherein the plurality of inner electrode sheets 2 are arranged at intervals to ensure insulation withstand voltage, the inner electrode sheets 2 are arranged on the insulating substrate 11 by means of surface mount packaging, and a plurality of outer electrode sheets 3 are also arranged on the side of the insulating substrate 11 away from the inner electrode sheets 2 by means of surface mount packaging, and a plurality of conductive through holes 111 are provided on the insulating substrate 11, and a conductor 4 is arranged in the plurality of conductive through holes 111, and the inner electrode sheets 2 and the outer electrode sheets 3 on both sides of the insulating substrate 11 are electrically connected by the conductor 4, that is, the electrode lead-out is realized. Among them, the inner electrode sheets 2 and the outer electrode sheets 3 are both in the traditional surface mount packaging method, and are provided with an insulating substrate 11, which effectively improves the insulation withstand voltage capability of the tube shell, and the product volume is smaller than that of the same voltage product, and the design makes up for the shortcomings of the insufficient withstand voltage capability of the traditional metal ceramic surface mount packaging tube shell, and realizes a 4000V high-voltage diode tube shell structure.

[0028] Furthermore, the minimum distance between the multiple inner electrode sheets 2 is 1 mm; the minimum distance between the multiple inner electrode sheets 2 and the inner side wall of the tube shell 1 is 1 mm.

[0029] In this embodiment, the minimum distance between the multiple inner electrode sheets 2 is 1 mm, and the minimum distance between the multiple inner electrode sheets 2 and the inner wall of the tube shell 1 is also 1 mm. Maintaining the distance between the inner electrode sheets 2 can ensure insulation withstand voltage, and the greater the distance between the inner electrode sheets 2, the better the insulation.

[0030] Furthermore, the external electrode sheet 3 is abutted against the insulating substrate 11 by surface mounting, and the height of the external electrode sheet 3 is 0.5-0.8 mm.

[0031] In this embodiment, the external electrode sheet 3 is surface mounted on the insulating substrate 11, and the height of the external electrode sheet 3 is optimized to 0.6 mm. The height of the external electrode sheet 3 is not limited and is set according to actual production requirements, thereby ensuring the low pressure capability of the product.

[0032] Furthermore, the insulating substrate 11 is made of Si3N4 material.

[0033] In the present embodiment, the insulating substrate 11 is made of Si3N4 material, which is an insulating ceramic material. The specific material of the insulating substrate 11 is not limited here and is set according to actual production requirements.

[0034] Furthermore, the plurality of inner electrode sheets 2 are surface-mounted on the insulating substrate 11 by glue filling, and the withstand voltage value is greater than 5KV; the thickness of the insulating substrate 11 is greater than 0.8mm, and the withstand voltage value is not less than 16KV.

[0035] In this embodiment, a plurality of inner electrode sheets 2 are attached to the insulating substrate 11 by glue filling, so that the connection between the inner electrode sheets 2 and the insulating substrate 11 is more stable. In addition, the withstand voltage value after glue filling is greater than 5KV. The thickness of the insulating substrate 11 is greater than 0.8mm, and the thickness in this embodiment is 0.8mm. The withstand voltage value of the insulating substrate 11 with a thickness of 0.8mm reaches 16KV. The withstand voltage value refers to the maximum voltage value that can be tolerated.

[0036] Furthermore, the minimum value of the electrical gap between the plurality of conductors 4 is 7.5 mm, and the withstand voltage value is greater than 7.5 KV.

[0037] In this embodiment, the electrical gap refers to the shortest distance between two conductors in the air, wherein the conductor 4 in this embodiment includes pin A and pin K. The electrical gap between multiple conductors 4 in this embodiment is the distance between pin K and pin A / K of the two conductors 4 with the shortest distance in the air, which is 7.5 mm, and the withstand voltage value is greater than 7.5KV.

[0038] Furthermore, the minimum value of the creepage distance between the plurality of conductors 4 is 4 mm, and the withstand voltage value is greater than 4 KV.

[0039] In this embodiment, the creepage distance refers to the shortest approximate distance between two conductors along the insulating surface, wherein the conductor 4 in this embodiment includes pin A and pin K. The creepage distance between multiple conductors 4 in this embodiment is 4 mm between pin A and pin K of two conductors 4 with the shortest distance on the insulating surface, and the withstand voltage value is greater than 4KV.

[0040] Furthermore, the withstand voltage of the tube shell 1 is greater than 4KV.

[0041] In this embodiment, the high-voltage diode shell structure adopts a metal ceramic surface mount packaging method, so that the withstand voltage value of the shell 1 is greater than 4KV and can be used for packaging products above 4KV.

[0042] Furthermore, a diode chip 21 is disposed on a side of the inner electrode sheet 2 away from the insulating substrate 11 , and a plurality of inner electrode sheets 2 are electrically connected via aluminum wires 5 .

[0043] In this embodiment, a diode chip 21 is further disposed on a side of the inner electrode sheet 2 away from the insulating substrate 11 , and a plurality of inner electrode sheets 2 are electrically connected to each other through aluminum wires 5 .

[0044] Further, the length of the insulating substrate 11 is in the range of 14-18 mm, and the width of the insulating substrate 11 is in the range of 10-14 mm.

[0045] In this embodiment, the length range of the insulating substrate 11 is 14-18 mm, specifically 16 mm in this embodiment. The specific length of the insulating substrate 11 is not limited here and is set according to actual production requirements; the width range of the insulating substrate 11 is 10-14 mm, specifically 12 mm in this embodiment. The specific length of the insulating substrate 11 is not limited here and is set according to actual production requirements.

[0046] The utility model provides a high-voltage diode tube shell structure, including a tube shell, an insulating substrate is arranged at one end of the tube shell, the tube shell also includes a plurality of inner electrode sheets arranged at intervals and surface-mounted on the insulating substrate, a plurality of outer electrode sheets are surface-mounted on the side of the insulating substrate away from the inner electrode sheets, and a plurality of conductive through holes with conductors inserted are also provided on the insulating substrate, and the inner electrode sheets and the outer electrode sheets are electrically connected through the conductors. The high-voltage diode tube shell structure provided by the utility model is based on the traditional surface-mount packaging and is matched with the voltage-resistant design of the insulating substrate. A plurality of inner electrode sheets arranged at intervals are arranged at one end of the insulating substrate, and a plurality of conductive through holes connecting the inner and outer electrode sheets are provided at the other end so that the electrodes are led out, which not only optimizes the arrangement structure of the internal electrodes, but also effectively improves the insulation voltage-resistant capacity of the tube shell. Compared with existing products, the product is smaller in size, and the low-pressure capacity of the product is increased, realizing a tube shell structure with a small volume and high voltage resistance.

[0047] It should be noted that the various embodiments in the present invention are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same and similar parts between the various embodiments can be referenced to each other.

[0048] It should also be noted that, in the present invention, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise one..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0049] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined in the present invention may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown in the present invention, but will conform to the widest range consistent with the principles and novel features disclosed in the present invention.

Claims

1. A high voltage diode shell structure, characterized in that: The invention comprises a tube shell, one end of which is provided with an insulating substrate, the tube shell also comprises a plurality of inner electrode sheets which are arranged at intervals and surface-mounted on the insulating substrate, a side of the insulating substrate away from the inner electrode sheets is surface-mounted with a plurality of outer electrode sheets, the insulating substrate is also provided with a plurality of conductive through holes in which conductors are inserted, and the inner electrode sheets and the outer electrode sheets are electrically connected via the conductors.

2. The high voltage diode shell structure according to claim 1, characterized in that: The minimum distance between the plurality of inner electrode sheets is 1 mm; the minimum distance between the plurality of inner electrode sheets and the inner side wall of the tube shell is 1 mm.

3. The high voltage diode shell structure according to claim 1, characterized in that: The outer electrode sheet is abutted against the insulating substrate by surface mounting, and the height of the outer electrode sheet is 0.5 mm to 0.8 mm.

4. The high voltage diode shell structure according to claim 1, characterized in that: The insulating substrate is made of Si3N4 material.

5. The high voltage diode shell structure according to claim 1, characterized in that: The plurality of inner electrode sheets are surface-mounted on the insulating substrate by glue filling, and the withstand voltage value is greater than 5KV; the thickness of the insulating substrate is greater than 0.8mm, and the withstand voltage value is not less than 16KV.

6. The high voltage diode shell structure according to claim 1, characterized in that: The minimum value of the electrical gap between the plurality of conductors is 7.5 mm, and the withstand voltage is greater than 7.5 KV.

7. The high voltage diode shell structure according to claim 1, characterized in that: The minimum creepage distance between the plurality of conductors is 4 mm, and the withstand voltage is greater than 4 KV.

8. The high voltage diode shell structure according to claim 1, characterized in that: The withstand voltage of the tube shell is greater than 4KV.

9. The high voltage diode shell structure according to claim 1, characterized in that: A diode chip is arranged on a side of the inner electrode sheet away from the insulating substrate, and a plurality of the inner electrode sheets are electrically connected through aluminum wires.

10. The high voltage diode shell structure according to claim 1, characterized in that: The length of the insulating substrate is in the range of 14-18 mm, and the width of the insulating substrate is in the range of 10-14 mm.

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