Packaging container and vapor deposition system
By mixing the vapors of solid and liquid precursors in the packaging container, the problem of poor precursor transport stability during vapor deposition is solved, and a more uniform deposition layer quality and a longer precursor use cycle are achieved, thereby improving the machine's productivity.
Patent Information
- Application Number
- CN202421377189.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-17
- Publication Date
- 2025-03-21
- Estimated Expiration
- 2034-06-17
AI Technical Summary
The prior art is difficult to effectively improve the transport stability of solid precursors during vapor deposition, resulting in uneven components, degradation of semiconductor layer mass, short period of replacement of precursors and waste of precursors.
A package container is designed, including a first cavity for filling the solid precursor and a second cavity for filling the liquid precursor, mixing the solid precursor vapor with the liquid precursor vapor through the first communication part, and the intake and outlet pipes are used to transport the carrier gas and the precursor vapor.
By mixing solid and liquid precursor vapors, the stability of the precursor is improved, the component uniformity of the vapor-phase deposition layer and the quality of the semiconductor layer are improved, the precursor usage cycle is extended, the precursor waste is reduced, and the machine's productivity is improved.
Smart Images
Figure CN222648110U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of vapor deposition technology, and in particular to a packaging container and a vapor deposition system. Background Technology
[0002] Semiconductor precursors are chemical substances required to generate semiconductor materials and are one of the important raw materials for manufacturing semiconductor materials. Semiconductor precursors are used in vapor deposition equipment and are the core manufacturing materials in thin film deposition processes. They are typically organic or inorganic compounds, such as organometallic compounds. In the semiconductor manufacturing process, the precursor decomposes into the required elements through a chemical reaction, and then deposits them on a substrate to form a thin film. Different types of precursors can be used to manufacture various semiconductor materials, forming different types of semiconductor device structures.
[0003] High-purity and stable semiconductor precursors are key materials and dopants for vapor deposition epitaxial growth of semiconductor compounds. Higher precursor purity means fewer impurities. However, evaluating precursor quality involves assessing the performance of the epitaxial product obtained using that precursor, whether it meets device performance requirements, and its cost. Besides the purity and stability of the precursor directly affecting the quality and performance of semiconductor materials, the morphology of the precursor also significantly impacts its application in vapor deposition. The quality and transport stability of the precursor material are crucial factors affecting the quality of epitaxial growth, especially when using solid-state precursors. As epitaxial growth progresses, the surface area of the solid source decreases, and channeling intensifies, causing instability in the saturated vapor pressure of the solid source. This instability becomes particularly difficult to control towards the end of the precursor's lifespan, leading to uneven composition in the vapor-deposited layer. This affects the stability of the deposition process, reduces the quality of the vapor-deposited semiconductor layer, shortens the precursor replacement cycle, wastes precursors, and reduces equipment uptime.
[0004] Existing technologies for improving solid precursors mainly involve modifying the packaging container structure, replacing the precursor solution, and using liquid precursor materials. However, the effects of modifying the existing packaging container structure are limited, the precursor solution has poor stability, and there has been no technological breakthrough in the preparation of new liquid precursor materials. Therefore, how to improve the transport stability of precursors during vapor deposition has become an urgent technical problem to be solved. Utility Model Content
[0005] The purpose of this invention is to provide a packaging container and a vapor deposition system for improving the transport stability of precursors inside the packaging container during the vapor deposition process.
[0006] The objective of this utility model is achieved through the following technical solution:
[0007] An encapsulation container, comprising:
[0008] A first cavity, the interior of which is used to fill a solid precursor;
[0009] A second cavity is disposed inside the first cavity, the interior of the second cavity is used to fill a liquid precursor, and an inner cavity for accommodating the solid precursor is formed between the outer wall of the second cavity and the inner wall of the first cavity.
[0010] The first connecting portion connects the first cavity to the second cavity, allowing the solid precursor vapor inside the first cavity to enter the second cavity;
[0011] An air intake pipe, which is connected to the second cavity, is used to deliver external carrier gas into the second cavity;
[0012] An exhaust pipe is connected to the second cavity and is used to discharge the carrier gas carrying liquid precursor vapor and solid precursor vapor from inside the second cavity.
[0013] Preferably, the first connecting portion includes at least one through hole and is located at the top of the cavity wall of the second cavity.
[0014] Preferably, a first curved portion is provided at the connection between the second cavity and the first communicating portion, and the first curved portion bends toward one side of the interior of the second cavity.
[0015] Preferably, the two ends of the intake pipe are located on the inner and outer sides of the second cavity, respectively, and the end of the intake pipe inside the second cavity is close to the bottom of the second cavity; and / or,
[0016] The two ends of the air outlet pipe are located on the inner and outer sides of the second cavity, respectively, and the end of the air outlet pipe inside the second cavity is close to the top of the second cavity.
[0017] Preferably, an intake control valve is installed at one end of the intake pipe located outside the second cavity; and / or,
[0018] An air outlet control valve is installed at one end of the air outlet pipe located outside the second cavity.
[0019] Preferably, the packaging container is provided with a first feeding port above the first cavity; and / or,
[0020] The encapsulation container is provided with a second feeding port above the second cavity; and / or,
[0021] The intake pipe has a curved section near the bottom, and the curved section is arranged along the central axis of the second cavity; and / or,
[0022] The solid precursor is solid trimethylindium, and the liquid precursor is formed by mixing solid trimethylindium and liquid triethylindium. The packaging container also includes a temperature control device for maintaining a set temperature in the packaging container.
[0023] Preferably, the packaging container further includes a third cavity, the first cavity being located within the third cavity, and an inner cavity for accommodating the liquid precursor being formed between the outer wall of the first cavity and the inner wall of the third cavity. The air inlet pipe extends to the bottom of the third cavity via an air inlet branch pipe and is used to introduce carrier gas. The first cavity and the third cavity are connected by a second connecting portion located at the top of the cavity wall of the first cavity; and / or,
[0024] A second curved portion is provided at the connection between the third cavity and the second communicating portion, and the second curved portion bends toward one side of the interior of the third cavity; and / or,
[0025] The outlet pipe discharges the carrier gas carrying liquid precursor vapor and fixed precursor vapor from the inside of the third cavity through the outlet branch pipe.
[0026] A vapor deposition system, comprising:
[0027] As described above, the packaging container;
[0028] A carrier gas supply device, which is connected to the air inlet pipe and is capable of providing carrier gas to the packaging container;
[0029] A deposition apparatus, which is connected to the gas outlet pipeline and is capable of receiving a carrier gas carrying liquid precursor vapor and solid precursor vapor for vapor phase deposition.
[0030] Preferably, the vapor deposition system includes a plurality of the encapsulation containers connected in parallel;
[0031] The output end of the carrier gas supply device is provided with a first carrier gas supply channel, and the input end of the deposition device is provided with a first carrier gas receiving channel.
[0032] The inlet pipe of each of the packaging containers is connected to the first carrier gas supply channel, and the outlet pipe of each of the packaging containers is connected to the first carrier gas receiving channel.
[0033] Preferably, the vapor deposition system includes a plurality of the encapsulation containers connected in series;
[0034] The output end of the carrier gas supply device is provided with a second carrier gas supply channel, and the input end of the deposition device is provided with a second carrier gas receiving channel.
[0035] The air outlet pipes and air inlet pipes of adjacent packaging containers are connected in sequence. After the connection, the air inlet pipe of the packaging container at the beginning end is connected to the second carrier gas supply channel, and the air outlet pipe of the packaging container at the end end is connected to the second carrier gas receiving channel.
[0036] Compared with the prior art, the beneficial effects of this utility model include at least the following:
[0037] A liquid precursor is placed in a second cavity, and a solid precursor is placed in a first cavity connected to the second cavity. The solid precursor vapor mixes with the liquid precursor vapor inside the second cavity through a first connecting part, preventing the decomposition of the precursor during the transport of the liquid precursor vapor inside the second cavity. This ensures the stability of the liquid precursor inside the second cavity and the precursor during transport. It is particularly suitable for situations where the solid precursor in the first cavity is solid trimethylindium (TMIn), and the liquid precursor in the second cavity is a mixture of solid trimethylindium (TMIn) and liquid triethylindium (TEIn) to form a self-assembled liquid In precursor. The solid trimethylindium vapor is transported together with the self-assembled liquid In precursor vapor, which can provide supersaturated solid trimethylindium vapor for the self-assembled liquid In precursor vapor and prevent the decomposition of the self-assembled liquid In precursor.
[0038] Furthermore, it can provide a more stable precursor source for vapor deposition processes, improve the uneven composition of vapor-deposited layers, the quality of vapor-deposited semiconductor layers, the short cycle time for changing precursors in packaging containers, and the waste of precursors, thereby increasing the uptime of the equipment. Attached Figure Description
[0039] Figure 1 This is a schematic diagram of the structure of a packaging container provided in an embodiment of the present utility model;
[0040] Figure 2 This is a schematic diagram of another packaging container provided in an embodiment of the present invention;
[0041] Figure 3 This is a schematic diagram of another packaging container provided in an embodiment of the present utility model;
[0042] Figure 4 This is a schematic diagram of the structure of another packaging container provided in this embodiment of the utility model;
[0043] Figure 5 This is a schematic diagram of the structure of a vapor deposition system provided in an embodiment of the present invention;
[0044] Figure 6 This is a schematic diagram of another vapor deposition system provided in an embodiment of the present invention.
[0045] In the figure: 1. First cavity; 101. First feed port; 102. Second bend; 2. Second cavity; 201. Second feed port; 3. First connecting part; 4. Air inlet pipe; 401. Air inlet control valve; 402. Bend section; 403. Air inlet branch pipe; 5. Air outlet pipe; 501. Air outlet control valve; 502. Air outlet branch pipe; 6. First bend; 7. Carrier gas supply device; 701. First carrier gas supply channel; 702. Second carrier gas supply channel; 8. Deposition device; 801. First carrier gas receiving channel; 802. Second carrier gas receiving channel; 9. Second connecting part; 10. Third cavity. Detailed Implementation
[0046] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided to make the present invention more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore repeated descriptions of them will be omitted.
[0047] The terms used to describe position and direction in this utility model are illustrated with the accompanying drawings, but changes can be made as needed, and all such changes are included within the scope of protection of this utility model.
[0048] Reference Figures 1 to 4 This utility model provides a packaging container, including: a first cavity 1, a second cavity 2, a first connecting part 3, an air inlet pipe 4, and an air outlet pipe 5.
[0049] Specifically, the first cavity 1 is used to fill a solid precursor, which is a precursor containing the required elements. For example, the solid precursor is solid trimethylindium (TMIn), and the solid precursor is placed at the bottom of the first cavity 1.
[0050] The second cavity 2 is disposed inside the first cavity 1. The interior of the second cavity 2 is used to fill the liquid precursor. The outer wall of the second cavity 2 and the inner wall of the first cavity 1 form an inner cavity for accommodating the solid precursor. The liquid precursor is a precursor containing the required elements. For example, the liquid precursor is a self-assembled liquid In precursor formed by mixing solid trimethylindium (TMIn) and liquid triethylindium (TEIn).
[0051] It should be noted that, in practice, organic self-assembled compounds formed by mixing two precursors containing the same element are prone to decomposition. In this application, in the self-assembled compound formed by solid trimethylindium (TMIn) and liquid triethylindium (TEIn), the self-assembled liquid precursor is prone to decomposition due to the unsaturation of the component (solid trimethylindium vapor). Here, the solid precursor in the first cavity 1 can provide the self-assembled liquid In precursor with supersaturated solid trimethylindium vapor component, thereby avoiding the decomposition of the self-assembled liquid In precursor.
[0052] The first cavity 1 is connected to the second cavity 2 through the first connecting part 3, which is used to allow the solid precursor vapor inside the first cavity 1 to enter the second cavity 2. In a preferred embodiment, the first connecting part 3 includes at least one through hole and is located at the top of the cavity wall of the second cavity 2. The solid precursor vapor in the first cavity 1 can enter the second cavity 2 through the through hole and together with the liquid precursor vapor in the second cavity 2, it will be discharged from the packaging container along with the carrier gas. Furthermore, when there are enough through holes, the top of the cavity wall of the second cavity 2 can be made into a porous structure, such as a mesh partition.
[0053] It should be noted that, regardless of the number of through holes, the diameter of the through holes should be within a certain range to prevent the liquid precursor from entering the first cavity 1 through the through holes, so as to have a corresponding isolation effect and prevent the liquid precursor in the second cavity 2 from entering the first cavity 1 through the first connecting part 3 when the packaging container is transported and disassembled and installed on the vapor deposition equipment.
[0054] The intake pipe 4 is connected to the second cavity 2 and is used to deliver external carrier gas into the second cavity 2. In a preferred embodiment, the two ends of the intake pipe 4 are located on the inner and outer sides of the second cavity 2, respectively. The end of the intake pipe 4 located inside the second cavity 2 is preferably close to the bottom of the second cavity 2, so that the carrier gas can reach the position inside the second cavity 2 and close to the bottom through the intake pipe 4. The carrier gas can be discharged below the liquid surface of the liquid precursor, which can increase the content of liquid precursor vapor carried by the carrier gas.
[0055] The exhaust pipe 5 is connected to the second cavity 2 and is used to discharge the carrier gas carrying liquid precursor vapor and solid precursor vapor from the inside of the second cavity 2. In a preferred embodiment, the two ends of the exhaust pipe 5 are located on the inner and outer sides of the second cavity 2, respectively. The end of the exhaust pipe 5 located inside the second cavity 2 is preferably close to the top of the second cavity 2. Specifically, the end of the exhaust pipe 5 located inside the second cavity 2 is preferably set at the same level or height as the first connecting part 3, so that the precursor carried in the carrier gas entering the exhaust pipe 5 is a mixture of solid precursor vapor in the first cavity 1 and liquid precursor vapor in the second cavity 2.
[0056] It should be noted that the second cavity 2 serves as a channel connecting the inlet pipe 4 and the outlet pipe 5. The inlet pipe 4 and the outlet pipe 5 are preferably located on opposite sides of the second cavity 2, which increases the flow path and time of the carrier gas within the second cavity 2, thereby increasing the content of liquid precursor vapor in the carrier gas. This allows the carrier gas discharged from the outlet pipe 5 to provide a better quality precursor source for subsequent vapor deposition processes.
[0057] Therefore, by placing the liquid precursor in the second cavity 2 and the solid precursor in the first cavity 1 which is connected to the second cavity 2, the solid precursor vapor mixes with the liquid precursor vapor inside the second cavity 2 through the first connecting part 3, thus avoiding the decomposition of the precursor during the transport of the liquid precursor vapor inside the second cavity 2. This ensures the stability of the liquid precursor inside the second cavity 2 and the precursor during transport. It is especially suitable for cases where the solid precursor in the first cavity 1 is solid trimethylindium (TMIn) and the liquid precursor in the second cavity 2 is a mixture of solid trimethylindium (TMIn) and liquid triethylindium (TEIn) to form a self-assembled liquid In precursor. The solid trimethylindium vapor is transported together with the self-assembled liquid In precursor vapor, which can provide supersaturated solid trimethylindium vapor for the self-assembled liquid In precursor vapor and avoid the decomposition of the self-assembled liquid In precursor. Furthermore, it can provide a more stable precursor source for vapor deposition processes, improve the uneven composition of vapor-deposited layers, the quality of vapor-deposited semiconductor layers, the short cycle time for changing precursors in packaging containers, and the waste of precursors, thereby increasing the uptime of the equipment.
[0058] In a preferred embodiment, a first bend 6 is provided at the connection between the second cavity 2 and the first connecting portion 3, and the first bend 6 bends toward the interior of the second cavity 2. Specifically, the first bend 6 connects to the cavity wall of the second cavity 2 at the bottom of the first connecting portion 3, and the connection is naturally transitioned to avoid the connection structure affecting the flow of precursor vapor. At the same time, the first bend 6 has a structure that tapers toward one side of the second cavity 2, which provides a certain isolation effect to prevent the liquid precursor in the second cavity 2 from entering the first cavity 1 through the first connecting portion 3 when handling and disassembling the packaging container onto the vapor deposition equipment.
[0059] In a preferred embodiment, an intake control valve 401 is installed at one end of the intake pipe 4 located outside the second cavity 2, which can control the flow rate of the carrier gas entering the packaging container as needed.
[0060] An exhaust control valve 501 is installed at one end of the exhaust pipe 5 located outside the second cavity 2, which can control the flow rate of the carrier gas discharged from the packaging container as needed.
[0061] In a preferred embodiment, the encapsulation container is provided with a first feeding port 101 above the first cavity 1, through which the solid precursor in the first cavity 1 can be replenished in a timely manner, which is convenient for replenishment.
[0062] The encapsulation container is provided with a second feeding port 201 above the second cavity 2. The liquid precursor in the second cavity 2 can be replenished in a timely manner through the second feeding port 201, which facilitates material replenishment.
[0063] Reference Figure 2 A curved section 402 is provided near the bottom of the air intake pipe 4. The curved section 402 is arranged along the central axis of the second cavity 2. The curved section 402 can prevent the liquid precursor and other substances from sloshing inside the second cavity 2, improve the stability of the liquid precursor and other substances inside the second cavity 2, and prevent the liquid precursor in the second cavity 2 from entering the first cavity 1 through the first connecting part 3.
[0064] The solid precursor is solid trimethylindium, and the liquid precursor is formed by mixing solid trimethylindium and liquid triethylindium. Since solid trimethylindium has a low vapor pressure and liquid triethylindium is extremely unstable and can decompose at room temperature, it is difficult for solid trimethylindium and liquid triethylindium to form a stable precursor delivery in the vapor deposition process, which makes it difficult to provide a stable precursor for the vapor deposition process and affects product performance. Therefore, solid trimethylindium and liquid triethylindium are mixed as the liquid precursor in the second chamber 2, and the solid precursor in the first chamber 1 is solid trimethylindium.
[0065] Specifically, during the vapor deposition process, the solid trimethylindium vapor filled in the first chamber 1 enters the second chamber 2 through the first connecting part 3. The solid trimethylindium vapor, along with the liquid precursor vapor carried by the second chamber 2, enters the outlet pipe 5 for transport. This prevents the liquid precursor from decomposing into solid trimethylindium vapor and liquid triethylindium vapor within the second chamber 2 and during transport, ensuring the stability of the precursor during transport within the second chamber 2 and the outlet pipe 5. It should be noted that the liquid precursor vapor inside the second chamber 2 is formed by the original solid trimethylindium molecules and liquid triethylindium molecules within the second chamber 2 linked by coordination and secondary bonds to form a liquid self-assembled indium precursor. The self-assembled precursor indium compound exhibits stronger stability, effectively overcoming the poor stability and other disadvantages associated with using solid trimethylindium or liquid triethylindium alone as precursors. The second chamber 2 is filled with solid trimethylindium and liquid triethylindium, which can be mixed in a molar ratio of 1:1.5 to 1:5.
[0066] As a preferred embodiment, the packaging container further includes a temperature control device (not shown) for maintaining a set temperature within the packaging container. This set temperature is, for example, the temperature required for solid trimethylindium and liquid triethylindium to link through coordination and secondary bonds to form a liquid self-assembled indium precursor. The set temperature is preferably 5–30°C. The temperature control device is, for example, located at the bottom of the second cavity 2. The temperature control device can be a component built into the packaging container or an external component located outside the packaging container shell. Temperature control devices used to maintain a stable temperature for the packaging container include, but are not limited to, water baths, heating platforms, or heating chambers.
[0067] Reference Figure 3 and Figure 4 In a preferred embodiment, the encapsulation container further includes a third cavity 10, with a first cavity 1 located inside the third cavity 10. An inner cavity for accommodating the liquid precursor is formed between the outer wall of the first cavity 1 and the inner wall of the third cavity 10. An air inlet pipe 4 extends to the bottom of the third cavity 10 through an air inlet branch pipe 403 and is used to introduce carrier gas. The first cavity 1 and the third cavity 10 are connected by a second connecting portion 9 located at the top of the cavity wall of the first cavity 1. The liquid precursor inside the third cavity 10 is preferably the same liquid precursor as that inside the second cavity 2. The second connecting portion 9 is preferably the same structure as the first connecting portion 3, so that the solid precursor vapor in the second cavity 2 can enter the third cavity 10 through the second connecting portion 9, allowing the first cavity 1, the second cavity 2, and the third cavity 10 to be interconnected and jointly provide the air outlet pipe 5 with carrier gas carrying the precursor vapor, further providing a more stable precursor source for the vapor deposition process.
[0068] A second bend 102 is provided at the connection between the third cavity 10 and the second connecting portion 9, and the second bend 102 bends toward the inside of the third cavity 10. Specifically, the second bend 102 is connected to the cavity wall of the third cavity 10 at the bottom of the second connecting portion 9, and there is a natural transition at the connection to avoid the connection structure affecting the flow of precursor vapor. At the same time, the second bend 102 has a structure that tapers toward the third cavity 10, so that it has a certain isolation effect and prevents the liquid precursor in the third cavity 10 from entering the first cavity 1 through the second connecting portion 9 when handling and disassembling the packaging container onto the vapor deposition equipment.
[0069] Reference Figure 4The exhaust pipe 5 discharges the carrier gas carrying liquid precursor vapor and solid precursor vapor from the inside of the third cavity 10 through the exhaust branch pipe 502. Specifically, although the first cavity 1, the second cavity 2, and the third cavity 10 are interconnected through the first connecting part 3 and the second connecting part 9, the air inlet of the exhaust pipe 5 is located inside the second cavity 2, and the distance between the third cavity 10 and the air inlet of the exhaust pipe 5 is relatively far. It is difficult for the precursor mixture of liquid precursor vapor inside the third cavity 10 and solid precursor vapor inside the first cavity 1 to be discharged through the exhaust pipe 5 in a timely manner. In order to solve the above problem, the exhaust pipe 5 is preferably provided with an exhaust branch pipe 502 located inside the third cavity 10, so that the mixed precursor carrying liquid precursor vapor inside the third cavity 10 and solid precursor vapor inside the second cavity 2 can be delivered to the exhaust pipe 5 in a timely manner through the exhaust branch pipe 502.
[0070] Reference Figure 5 and Figure 6 The present invention also provides a vapor deposition system, comprising: a packaging container as described above, a carrier gas supply device 7, and a deposition device 8.
[0071] The carrier gas supply device 7 is connected to the air inlet pipe 4 and is at least able to provide carrier gas to the packaging container. Specifically, the carrier gas supply device 7 is preferably connected to one end of the air inlet pipe 4 located outside the second cavity 2 to deliver the carrier gas to the packaging container.
[0072] The deposition apparatus 8 is connected to the gas outlet line 5 and is capable of receiving carrier gas carrying liquid precursor vapor and solid precursor vapor for vapor phase deposition. Specifically, the deposition apparatus 8 is preferably connected to one end of the gas outlet line 5 located outside the second cavity 2 to deliver the carrier gas carrying the mixed precursor from the encapsulation container to the deposition apparatus 8.
[0073] Reference Figure 5 In a preferred embodiment, the vapor deposition system includes multiple encapsulation containers connected in parallel.
[0074] Specifically, the output end of the carrier gas supply device 7 is provided with a first carrier gas supply channel 701, and the input end of the deposition device 8 is provided with a first carrier gas receiving channel 801; at this time, the first carrier gas supply channel 701 is the main pipeline for supplying carrier gas, and the first carrier gas receiving channel 801 is the main pipeline for receiving carrier gas.
[0075] Each encapsulation container's inlet pipe 4 is connected to the first carrier gas supply channel 701, and each encapsulation container's outlet pipe 5 is connected to the first carrier gas receiving channel 801. Multiple encapsulation containers' inlet pipes 4 are connected to the same first carrier gas supply channel 701, and multiple encapsulation containers' outlet pipes 5 are connected to the same first carrier gas receiving channel 801. During the vapor deposition process, a single encapsulation container is used until its precursor is exhausted. Subsequently, other encapsulation containers can be switched to continue supplying precursors to the deposition apparatus 8, allowing the entire vapor deposition process to run uninterrupted. This prevents process interruptions caused by the need to replace the precursor encapsulation container when a single encapsulation container's precursor is exhausted, thus improving the overall growth efficiency of the vapor deposition process.
[0076] Reference Figure 6 In one specific embodiment, the vapor deposition system includes multiple encapsulation containers connected in series.
[0077] Specifically: the output end of the carrier gas supply device 7 is provided with a second carrier gas supply channel 702, and the input end of the deposition device 8 is provided with a second carrier gas receiving channel 802; at this time, the second carrier gas supply channel 702 supplies carrier gas to one of the encapsulation containers, and the second carrier gas receiving channel 802 is a pipe for receiving carrier gas from one of the encapsulation containers.
[0078] The outlet pipes 5 and inlet pipes 4 of adjacent packaging containers are connected in sequence. After connection, the inlet pipe 4 of the initial packaging container is connected to the second carrier gas supply channel 702, and the outlet pipe 5 of the final packaging container is connected to the second carrier gas receiving channel 802. After the carrier gas supply device 7 provides carrier gas to the initial packaging container, the outlet pipes 5 of this packaging container and subsequent adjacent packaging containers provide carrier gas to the next packaging container. The outlet pipe 5 of the final packaging container provides carrier gas to the deposition device 8. By connecting the packaging containers in series during the vapor deposition process, fluctuations in precursor delivery caused by external factors within a single packaging container can be avoided, making the precursor delivery more stable.
[0079] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and alterations to the above embodiments within the scope of the present invention without departing from the principles and spirit of the present invention, and all such changes should fall within the protection scope of the claims of the present invention.
Claims
1. A packaging container, characterized in that: include: A first cavity (1), wherein the interior of the first cavity (1) is used to be filled with a solid precursor; A second cavity (2), wherein the second cavity (2) is arranged inside the first cavity (1), the interior of the second cavity (2) is used to be filled with a liquid precursor, and an inner cavity for accommodating the solid precursor is formed between the outer wall of the second cavity (2) and the inner wall of the first cavity (1); a first connecting portion (3), wherein the first cavity (1) is connected to the second cavity (2) via the first connecting portion (3), and is used for allowing the solid precursor vapor inside the first cavity (1) to enter the second cavity (2); an air intake pipeline (4), the air intake pipeline (4) being in communication with the second cavity (2) and being used for conveying external carrier gas into the interior of the second cavity (2); An air outlet pipeline (5), the air outlet pipeline (5) being in communication with the second cavity (2) and being used for discharging a carrier gas carrying liquid precursor vapor and solid precursor vapor from the interior of the second cavity (2).
2. The packaging container according to claim 1, characterized in that: The first connecting portion (3) comprises at least one through hole and is located at the top of the cavity wall of the second cavity (2).
3. The packaging container according to claim 2, characterized in that: A first curved portion (6) is provided at the connection between the second cavity (2) and the first connecting portion (3), and the first curved portion (6) curves towards one side of the interior of the second cavity (2).
4. The packaging container according to claim 1, characterized in that: The two ends of the air intake pipeline (4) are respectively located at the inner and outer sides of the second cavity (2), and one end of the air intake pipeline (4) located inside the second cavity (2) is close to the bottom of the second cavity (2); and / or, The two ends of the air outlet pipeline (5) are respectively located at the inner and outer sides of the second cavity (2), and one end of the air outlet pipeline (5) located inside the second cavity (2) is close to the top of the second cavity (2).
5. The packaging container according to claim 4, characterized in that: An air intake control valve (401) is installed at one end of the air intake pipeline (4) located outside the second cavity (2); and / or, An air outlet control valve (501) is installed at one end of the air outlet pipeline (5) located outside the second cavity (2).
6. The packaging container according to claim 1, characterized in that: The packaging container is located above the first cavity (1) and is provided with a first feeding port (101); and / or, The packaging container is located above the second cavity (2) and is provided with a second feeding port (201); and / or, The air intake pipeline (4) is provided with a curved section (402) at a position close to the bottom, and the curved section (402) is arranged along the central axis of the second cavity (2); and / or, The solid precursor is solid trimethylindium, and the packaging container further comprises a temperature control device, which is used to maintain the packaging container at a set temperature.
7. The packaging container according to claim 1, characterized in that: The packaging container further comprises a third cavity (10), the first cavity (1) being located in the third cavity (10), an inner cavity for accommodating the liquid precursor being formed between the outer wall of the first cavity (1) and the inner wall of the third cavity (10), the air inlet pipeline (4) extending to the bottom of the third cavity (10) through the air inlet branch pipe (403) and being used for introducing a carrier gas, the first cavity (1) and the third cavity (10) being connected via a second connecting portion (9) located at the top of the cavity wall of the first cavity (1); and / or, A second curved portion (102) is provided at a connection point between the third cavity (10) and the second connecting portion (9), and the second curved portion (102) is curved toward one side of the interior of the third cavity (10); and / or, The gas outlet pipeline (5) discharges the carrier gas carrying the liquid precursor vapor and the fixed precursor vapor from the inside of the third cavity (10) through the gas outlet branch pipe (502).
8. A vapor deposition system, characterized in that: include: The packaging container according to any one of claims 1 to 7; a carrier gas supply device (7), the carrier gas supply device (7) being connected to the air inlet pipeline (4) and capable of providing carrier gas for the packaging container; A deposition device (8), the deposition device (8) being connected to the gas outlet pipeline (5) and capable of receiving a carrier gas carrying liquid precursor vapor and solid precursor vapor to perform gas phase deposition.
9. The vapor deposition system according to claim 8, characterized in that: The vapor deposition system comprises a plurality of the packaging containers connected in parallel; The output end of the carrier gas supply device (7) is provided with a first carrier gas supply channel (701), and the input end of the deposition device (8) is provided with a first carrier gas receiving channel (801); The air inlet pipeline (4) of each packaging container is respectively communicated with the first carrier gas supply channel (701), and the air outlet pipeline (5) of each packaging container is respectively communicated with the first carrier gas receiving channel (801).
10. The vapor deposition system according to claim 8, characterized in that: The vapor deposition system comprises a plurality of the packaging containers connected in series; The output end of the carrier gas supply device (7) is provided with a second carrier gas supply channel (702), and the input end of the deposition device (8) is provided with a second carrier gas receiving channel (802); The gas outlet pipelines (5) and gas inlet pipelines (4) of adjacent packaging containers are connected in sequence; after the connection, the gas inlet pipeline (4) of the packaging container at the starting end is connected to the second carrier gas supply channel (702); after the connection, the gas outlet pipeline (5) of the packaging container at the end is connected to the second carrier gas receiving channel (802).