External deposition source conveying device and focused ion beam deposition wiring system

Abstract

The utility model provides an external deposition source conveying device and a focused ion beam deposition connection system, the external deposition source conveying device comprises a deposition source container and a deposition source conveying mechanism, the deposition source container is used for storing deposition source liquid, a deposition source is volatilized through a heater, and the deposition source is conveyed to a focused ion beam machine table through the deposition source conveying mechanism. Due to the fact that the deposition source container is arranged outside the machine table, the size of the deposition source container is not limited, and more deposition sources can be stored, the number of times of replacing consumables is greatly reduced, the vacuum environment in a cavity of the machine table cannot be damaged in the process of adding the consumables, the long-time machine resetting process after feeding is avoided, and the risk of system abnormity is reduced. The focused ion beam deposition connecting system comprises an external deposition source conveying device and a machine table and is used for plating wires through ion beams formed by a deposition source, and gas in a deposition source conveying mechanism enters a cavity of the machine table through a focused ion beam needle in the focused ion beam machine table and is connected with the machine table.

Description

Technical Field

[0001] This application belongs to the field of nanoscale processing technologies, and relates to a focused ion beam wiring technology, in particular to an external deposition source delivery device and a focused ion beam deposition wiring system. Background Art

[0002] FIB (Focused Ion Beam) focuses the ion beam generated by an ion source and irradiates it on the surface of a sample to complete micro- and nano-scale surface topography processing. Tungsten or platinum deposited by a focused ion beam (FIB) can be used to connect nano-samples, repair integrated circuits, and synthesize nanostructures.

[0003] In the existing focused ion beam wiring method, a solid tungsten powder is heated to volatilize it to generate an ion beam for wiring. To avoid the influence of surrounding gas molecules on the ion beam during the wiring process, the inside of the focused ion beam machine needs to be in an absolute vacuum state during operation. At the same time, since the solid metal tungsten may agglomerate due to uneven heating during the heating process, affecting the volatilization effect, copper balls or copper wires need to be added to make the metal tungsten heat evenly, but this also greatly reduces the space of the container for placing the metal tungsten. Generally, the existing focused ion beam machines need to add solid metal tungsten every 2 - 3 months. And each process of adding consumables will inevitably break the vacuum state inside the machine. Before resuming operation, it is necessary to re-pump the vacuum. It takes at least 1 - 2 days to resume normal operation after each feeding, reducing the production efficiency of the machine, and increasing the risk of machine abnormalities during the process of restoring the vacuum, seriously affecting the cost and efficiency of focused ion beam wiring.

[0004] Therefore, how to maintain the vacuum state inside the focused ion beam machine to improve production efficiency and reduce the risk of machine abnormalities is an urgent problem to be solved by those skilled in the art. Summary of the Invention

[0005] The purpose of this application is to provide an external deposition source delivery device and a focused ion beam deposition wiring system, which are used to solve the problem that the existing focused ion beam machines need to frequently replace deposition source consumables, break the vacuum state inside the machine, resulting in a long time for the machine to resume operation and prone to machine abnormalities.

[0006] In the first aspect, this application provides an external deposition source delivery device, including a deposition source container and a deposition source delivery mechanism connecting the deposition source container and an external focused ion beam machine.

[0007] The deposition source container includes a container body for loading the deposition source, a heater for heating the deposition source in the container body to vaporize it, and a container gas outlet. The heater can be arranged outside the container body or on the inner wall of the container body. It can be attached to the container body or have a certain gap, as long as it can heat the container body and the deposition source inside it;

[0008] The deposition source delivery mechanism includes a pipeline, and a first manual valve, a pressure detector, and a micro-regulating valve are sequentially arranged on the pipeline. One end of the pipeline is communicated with the container gas outlet, and the other end of the pipeline is communicated with the focused ion beam needle of an external focused ion beam machine tool. The first manual valve is arranged on the side close to the external focused ion beam machine tool. The first manual valve is used to control whether the deposition source gas enters the inside of the focused ion beam machine tool for deposition connection; the micro-regulating valve is used to control the pressure of the flowing deposition source gas so that it is within the range suitable for deposition connection; the pressure detector displays the specific value of the deposition source gas pressure.

[0009] In this application, through an external deposition source delivery device, the deposition source is stored in a deposition source container outside the focused ion beam machine tool, and the deposition source delivery mechanism is used to input the deposition source gas into the focused ion beam machine tool. This makes the size of the deposition source container for storing the deposition source not limited by the internal space of the machine tool, can store more deposition sources, reduces the replacement and addition frequency of the deposition source, and the process of adding the deposition source is carried out outside the machine tool, which will not damage the vacuum state inside the machine tool, greatly shortens the restart time of the focused ion beam machine tool after feeding the material, and also reduces the abnormal risk during the restart process.

[0010] In an embodiment of the present invention, the deposition source includes: liquid tungsten or liquid platinum. In the prior art, by heating solid metal tungsten powder to volatilize it to form a deposition source gas, copper balls or copper wires need to be added for heat conduction during the heating process to avoid the agglomeration of tungsten powder affecting the volatilization effect. In this application, by heating liquid tungsten or liquid platinum to form a deposition source gas, a good volatilization effect can be achieved without adding a heat-conducting substance, and the effective space for storing the deposition source in the deposition source container can be further increased.

[0011] In an embodiment of the present invention, the deposition source delivery mechanism further includes a second manual valve arranged on the pipeline between the micro-regulating valve and the container gas outlet, which is used to control the entry of the deposition source gas into the deposition source delivery mechanism.

[0012] In an embodiment of the present utility model, the deposition source delivery mechanism further includes a bellows disposed on the pipeline between the second manual valve and the micro-regulating valve, which is used to store a certain amount of deposition source gas. When the bellows stores a sufficient amount of deposition source gas, the deposition source gas stops entering the deposition source delivery mechanism, and the heater of the deposition source container can be turned off to save costs.

[0013] In an embodiment of the present utility model, the deposition source container further includes a safety valve, which is used to control the air pressure inside the deposition source container to avoid damage to the deposition source container due to excessive air pressure. The safety valve is also used to add the deposition source. When the deposition source in the deposition source container is insufficient, the safety valve is opened, and the deposition source can be added into the container body.

[0014] In an embodiment of the present utility model, the deposition source container further includes an inspection window, which is a transparent window through which it can be observed whether the deposition source in the deposition source container needs to be added.

[0015] In an embodiment of the present utility model, the inspection window is provided with a liquid level scale for accurately controlling the quantity of the deposition source in the deposition source container.

[0016] In an embodiment of the present utility model, the height of the container gas outlet is higher than that of the inspection window, and the liquid level will not be higher than the height of the inspection window after the deposition source is added, so as to avoid the deposition source liquid flowing into the deposition source delivery mechanism from the gas outlet.

[0017] In an embodiment of the present utility model, the deposition source container further includes a sewage outlet disposed at the bottom of the container body, which is used to discharge the dirt or impurities formed by the long-term placement of liquid in the container body.

[0018] In a second aspect, the present application provides a focused ion beam deposition connection system, including: the external deposition source delivery device as described above, and a focused ion beam machine platform connected to the external deposition source delivery mechanism;

[0019] Wherein, the focused ion beam machine platform includes a machine platform cavity and a focused ion beam needle head. The focused ion beam needle head is disposed inside the machine platform cavity. The external deposition source delivery device is connected to the focused ion beam needle head. The deposition source gas enters the focused ion beam machine platform through the external deposition source delivery device. The machine platform cavity is a vacuum chamber for deposition plating wire. The focused ion beam needle head accelerates and focuses the deposition source gas so that it is deposited on the sample surface.

[0020] In this application, a deposition source gas is transported to a focused ion beam machine tool through an external deposition source transport device to complete the deposition and wiring of a sample. Since the deposition source container is arranged outside the focused ion beam machine tool, the effective space inside the focused ion beam machine tool is increased, which is beneficial to the reasonable setting of the spatial structure of the focused ion beam machine tool and is beneficial to actual production applications. Moreover, the structures of the external deposition source transport device and the focused ion beam machine tool are simple, facilitating disassembly, transportation, and inspection.

[0021] As described above, this application provides an external deposition source transport device and a focused ion beam deposition connection system. By arranging the deposition source container outside the focused ion beam machine tool, the amount of deposition source that the deposition source container can store is greatly increased, the replacement frequency of the deposition source is reduced, and the efficiency of deposition and wiring is improved. Arranging the deposition source container outside also avoids the destruction of the vacuum state inside the focused ion beam machine tool during the addition of the deposition source. The focused ion beam machine tool does not need to be evacuated and restarted, saving time and reducing the risk of anomalies. At the same time, this application uses liquid tungsten or liquid platinum as the deposition source, eliminating the need to add copper balls or copper wires for heat conduction, further increasing the effective space for storage inside the deposition source container, reducing the deposition source replacement frequency, improving production efficiency, and being beneficial to actual production applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It shows a schematic structural diagram of the deposition source container described in the embodiment of this application.

[0023] Figure 2 It shows a schematic structural diagram of the deposition source transport mechanism described in the embodiment of this application.

[0024] Figure 3 It shows a schematic structural diagram of the focused ion beam deposition connection system described in the embodiment of this application.

[0025] DESCRIPTION OF REFERENCE NUMERALS

[0026] 10 Deposition source container

[0027] 20 Deposition source transport mechanism

[0028] 30 Focused ion beam machine tool

[0029] 110 Container main body

[0030] 120 Heater

[0031] 130 Container gas outlet

[0032] 140 Safety valve

[0033] 150 Inspection window

[0034] 151 Liquid level scale

[0035] 160 sewage outlet

[0036] 210 pipeline inlet

[0037] 220 second manual valve

[0038] 230 bellows

[0039] 240 micro regulating valve

[0040] 250 pressure detector

[0041] 260 first manual valve

[0042] 270 pipeline outlet

[0043] 310 focused ion beam needle

[0044] 320 machine chamber Detailed implementation manners

[0045] The following uses specific specific examples to illustrate the implementation manners of the present application. Those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in this specification. The present application can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that, without conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0046] It should be noted that the diagrams provided in the following embodiments only illustrate the basic concept of the present application in a schematic manner. Therefore, only the components related to the present application are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0047] Since the existing focused ion beam machine installs solid metal tungsten inside the machine and needs to set up a heating device inside the machine for heating and volatilization, and the effective space inside the focused ion beam machine is limited, the storage space of metal tungsten must be compressed. The solid metal tungsten powder used in the prior art needs to be mixed with copper wires or copper balls for heating, which further reduces the amount of metal tungsten stored inside the machine. It is necessary to often open the machine to add consumables, which affects the efficiency and breaks the vacuum state inside the machine. It is easy to have abnormalities when the machine restarts. The following embodiments of the present application provide an external deposition source delivery device and a focused ion beam deposition connection system, providing an external container for placing the deposition source, which can solve the technical problem that the existing focused ion beam machine can store too little deposition source and needs to often add the deposition source, resulting in low efficiency, and will not affect the vacuum state inside the machine during the replacement process.

[0048] The principle and implementation manner of an external deposition source delivery device and a focused ion beam deposition connection system according to this embodiment will be elaborated in detail below in conjunction with the accompanying drawings, so that those skilled in the art can understand the external deposition source delivery device and the focused ion beam deposition connection system of this embodiment without creative labor.

[0049] This embodiment provides an external deposition source delivery device for forming a deposition source gas for the focused ion beam machine 30 to perform deposition plating. It includes: a deposition source container 10 and a deposition source delivery mechanism 20. The deposition source container 10 is used to store the deposition source and heat it to volatilize. The deposition source delivery mechanism 20 includes a pipeline and a first manual valve 260, a pressure detector 250, and a micro-regulating valve 240 provided on the pipeline. One end of the pipeline is connected to the deposition source container 10, and the other end is connected to the focused ion beam machine 30 for delivering the gas formed by the volatilization of the deposition source to the focused ion beam machine 30.

[0050] It should be noted that the deposition source in this embodiment can be tungsten metal or platinum metal, which is used to form an ion beam for deposition plating. Preferably, the deposition source is tungsten metal, which is easy to volatilize when heated and has a low production cost. Hereinafter, this embodiment will take tungsten metal as an example for specific description.

[0051] As Figure 1 shown, the deposition source container 10 includes a container main body 110, a heater 120, and a container gas outlet 130. Among them, the container main body 110 is used to store the deposition source tungsten metal, and the material of the container main body 110 is stainless steel; the heater 120 is used to heat the tungsten metal to volatilize, and the volatilized tungsten gas leaves the deposition source container 10 through the container gas outlet 130 for subsequent deposition plating. It should be noted that the heater 120 can be provided outside the container main body 110 or on the inner wall of the container main body 110. It can be in contact with the container main body 110 or have a gap with the container main body 110, as long as it can heat the container main body 110 and the deposition source inside it. This application does not make any restrictions here.

[0052] Preferably, in order to heat the tungsten metal evenly and sufficiently, the heater 120 surrounds the container main body 110. Specifically, the heater 120 can be a hollow ring surrounding the entire container main body 110, or the heater 120 is a plurality of heating rods evenly distributed to surround the container main body 110.

[0053] Since the deposition source container 10 is placed outside the focused ion beam machine 30, the volume of the deposition source container 10 is not limited by the machine, and the capacity is very large. For example, it can be 1 liter, and the stored tungsten metal can ensure that no addition is required within 3 years, greatly reducing the replacement frequency of consumables, and thus improving the efficiency of deposition plating.

[0054] Preferably, the deposition source container 10 further includes a safety valve 140, which is provided at the top of the container body 110. The safety valve 140 can control the pressure inside the container body 110 to prevent damage to the deposition source container 10 due to excessive air pressure. Further, the deposition source container 10 further includes a pressure gauge (not shown in the figure) to display the air pressure inside the deposition source container 10. When the internal air pressure is too high, the heater 120 stops heating, and the safety valve 140 can also be opened; when the internal air pressure remains unchanged or is too low after heating, check whether the deposition source container 10 is leaking air.

[0055] At the same time, the safety valve 140 is also used for the addition of the deposition source tungsten metal. Specifically, when the tungsten metal in the deposition source container 10 is insufficient, the safety valve 140 is opened, and the deposition source tungsten metal is added from the top of the container body 10. It should be noted that since the addition of tungsten metal in this embodiment is achieved by opening the deposition source container 10 located outside the focused ion beam machine tool 30, the inside of the focused ion beam machine tool 30 remains in a vacuum state, and there is no need for a vacuum pumping process to restore the vacuum when working again, saving time costs and avoiding the risk of abnormalities during the vacuum pumping process of the machine tool, greatly increasing the production efficiency.

[0056] Further, the deposition source container 10 of this embodiment further includes an inspection window 150. The inspection window 150 is a transparent window through which the remaining amount of tungsten metal inside the deposition source container 10 can be observed to determine whether addition is required.

[0057] Preferably, in this embodiment, the deposition source is liquid tungsten. During the heating and volatilization process of solid tungsten metal powder, in order to avoid agglomeration caused by uneven heating and affecting the volatilization effect, copper balls or copper wires need to be mixed for heat conduction, occupying the available space inside the container. This embodiment uses liquid tungsten for heating and volatilization, without the need to use copper balls and copper wires, further increasing the available space of the deposition source container 10 and reducing the replacement frequency of tungsten metal.

[0058] Specifically, the liquid tungsten is a tungsten solution. For example, a tungsten single-element solution, which is a commercially available product and is not specifically described in this application.

[0059] Similarly, when the deposition source is platinum metal, it can also be liquid platinum, such as a solution of platinum organic compounds (platinum acetylacetonate, trimethylmethylcyclopentadienyl platinum, etc.).

[0060] Specific descriptions will be given below taking liquid tungsten as an example.

[0061] Further, a liquid level scale 151 is provided on the inspection window 150 to facilitate reading the capacity of the liquid tungsten inside the deposition source container 10. As Figure 1As shown, the liquid level scale is provided with a maximum liquid level line and a minimum liquid level line. When the liquid in the deposition source container 10 is lower than the minimum liquid level line, liquid is added into the container main body 110 through the safety valve 140, and the liquid addition amount does not exceed the maximum liquid level line.

[0062] Preferably, the position of the container gas outlet 130 is higher than that of the inspection window 150, and the height of the liquid tungsten will not exceed the maximum liquid level line to prevent the unvaporized liquid tungsten from flowing directly out of the container gas outlet 130. Alternatively, the container gas outlet 130 is connected to the container main body 110 through a corner structure that turns upward and then connected to the deposition source conveying mechanism 20 to prevent the unvaporized liquid tungsten from directly entering the deposition source conveying mechanism 20.

[0063] Preferably, the deposition source container 10 further includes a sewage outlet 160 for discharging dirt or impurities formed by the long-term placement of liquid in the container main body 110.

[0064] The container main body 10 stores the deposition source liquid tungsten. The heater 120 heats it to volatilize the liquid tungsten, and the volatilized liquid tungsten enters the deposition source conveying mechanism 20 through the container gas outlet 130 for conveyance, so as to reach the focused ion beam machine stage 30 for deposition wiring. Specifically, as Figure 2 shown, the deposition source conveying mechanism 20 includes a pipeline and a first manual valve 260, a pressure detector 250, and a micro-regulating valve 240 sequentially arranged on the pipeline. The pipeline inlet 210 is connected to the container gas outlet 130, and the pipeline outlet 270 is connected to the focused ion beam needle 310 of the focused ion beam machine stage 30. Gas enters the deposition source conveying mechanism 20 from the container gas outlet of the deposition source container 10. The gas flow rate is adjusted by the micro-regulating valve 240 so that the gas pressure is within a suitable range, and the first manual valve 260 is opened. The gas enters the focused ion beam machine stage 30 through the pipeline outlet 270 for conveyance to achieve deposition wiring. Among them, the suitable range of the gas pressure is 6×10^-6 pa to 1×10^-5 pa. If the gas pressure is too small, deposition wiring cannot be carried out. If the gas pressure is too large, it will cause pollution when entering the machine chamber 320. Specifically, the pressure detector 250 is used to measure the gas pressure passing through the micro-regulating valve 240, and the magnitude of the gas pressure is determined from the value displayed on it to ensure that the air pressure is within a suitable range and improve the yield rate of deposition wiring.

[0065] Furthermore, the deposition source conveying mechanism 20 further includes a second manual valve 220. The second manual valve 220 is arranged on the pipeline between the micro-regulating valve 240 and the container gas outlet 130. The second manual valve 220 is used to control the gas entering the deposition source conveying mechanism 20.

[0066] Furthermore, the deposition source delivery mechanism 20 further includes a bellows 230, which is disposed on the pipeline between the second manual valve 220 and the micro-regulating valve 240 and is used to store gas as a buffer. Specifically, when the second manual valve 220 is opened, gas enters the deposition source delivery mechanism 20 and is stored in the bellows 230. When there is sufficient gas in the bellows 230, the second manual valve 220 is closed, and then the micro-regulating valve 240 and the first manual valve 260 are opened to deliver gas. Since the bellows 230 can store a large amount of gas, when there is enough gas in the bellows 230, the second manual valve 220 can be closed. At this time, the gas stops entering the deposition source delivery mechanism 20, and the deposition source container 10 does not need to continuously volatilize gas. Therefore, the heater 120 does not need to continuously heat, which can save energy and reduce costs.

[0067] Next, taking liquid tungsten as an example, the generation and delivery process of the deposition source gas will be specifically described.

[0068] As Figure 1 shown, liquid tungsten is stored in the container body 110. The remaining amount of liquid tungsten is checked through the inspection window 150. When the remaining amount of liquid tungsten is insufficient, the safety valve 140 is opened for addition.

[0069] When the remaining amount of liquid tungsten is appropriate, the heater 120 is turned on to heat the liquid tungsten, and the liquid tungsten volatilizes to form gaseous tungsten.

[0070] The gaseous tungsten leaves the deposition source container 10 through the container gas outlet 130 and enters the deposition source delivery mechanism 20 for delivery.

[0071] As Figure 1 shown, when the second manual valve 220 is opened, the gaseous tungsten enters the bellows 230 for temporary storage until it reaches a sufficient amount. At this time, the second manual valve 220 can be closed, and the heater 120 can be turned off simultaneously to avoid continuous gas volatilization and save costs. The tungsten stored in the bellows 230 remains in a gaseous state for subsequent transmission to the focused ion beam machine 30 for deposition plating. Generally, the gas in the bellows 230 can be used for half a month to one month.

[0072] The micro-regulating valve 240 is opened, and the air pressure displayed by the pressure detector 250 is observed. When the air pressure value reaches an appropriate range, for example, between 6*10^-6 pa and 1*10^-5 pa, at this time, the first manual valve 260 is opened, and the gaseous tungsten enters the focused ion beam machine 30 through the pipeline.

[0073] It should be noted that the micro-regulating valve 240 only adjusts the air pressure, and the first manual valve 260 controls whether the gaseous tungsten enters the focused ion beam machine 30 for plating. Therefore, the micro-regulating valve 240 does not need to be readjusted after adjustment and does not need to be closed either. The operation is convenient and time cost is saved.

[0074] It should be noted that when the amount of gaseous tungsten stored in the bellows 230 is insufficient, the heater 120 is turned on to repeat the process of tungsten volatilizing into gas and entering the bellows 230. After storing a sufficient amount of gaseous tungsten, the first manual valve 260 is reopened to perform deposition plating. Among them, to determine that the gaseous tungsten in the bellows 230 is insufficient, it can be determined by opening the micro-regulating valve 240 to the maximum and the pressure still not meeting the requirements of the plating line. Or, by connecting a gas pressure measuring device (not shown in the figure) to the bellows 230, when the gas pressure in the bellows 230 is too small, for example, less than 6×10^-6 Pa, it is determined that the gaseous tungsten is insufficient.

[0075] The external deposition source delivery device provided in this embodiment is arranged outside the focused ion beam machine stage 30, enabling gaseous tungsten to enter the focused ion beam machine stage 30 to achieve deposition connection. Since the deposition source container 10 is not inside the focused ion beam machine stage 30, its volume is not restricted, and more deposition sources can be stored. Furthermore, liquid tungsten is used as the deposition source. Compared with solid metal tungsten powder, the liquid does not require copper balls or copper wires for heat conduction, so that the effective space inside the deposition source container 10 is further increased, and thus the frequency of replacing and adding the deposition source is greatly reduced, improving the production efficiency. The gaseous tungsten generated by the deposition source container 10 enters the focused ion beam machine stage 30 through the deposition source delivery mechanism 20. The deposition source delivery mechanism 20 can control the disconnection and connection between the deposition source container 10 and the focused ion beam 30 machine stage. Therefore, during the process of adding liquid tungsten to the deposition source container 10, the internal vacuum environment of the focused ion beam machine stage 30 will not be damaged, avoiding the need for the focused ion beam machine stage 30 to pump vacuum for a long time after feeding. The machine recovery process is simple and fast, reducing the risk of system anomalies and further improving the production efficiency.

[0076] As Figure 3 shown, this embodiment also provides a focused ion beam deposition connection system, including: an external deposition source delivery device and a focused ion beam machine stage 30. Among them, the external deposition source delivery device is used to provide a deposition source gas to the focused ion beam machine stage 30, including a deposition source container 10 and a deposition source delivery mechanism 20; the focused ion beam machine stage 30 includes a machine stage cavity 320 and a focused ion beam needle 310.

[0077] The machine chamber 320 is a chamber inside the focused ion beam machine 30 where deposition wiring occurs. It always maintains a vacuum state, and this vacuum state will not be disrupted during the process of opening the container body 110 to add the deposition source. The focused ion beam needle 310 is placed inside the machine chamber 320 and has a silica gel capillary tube connected to an adapter outside the machine chamber 320. Through another pipe connected to the adapter outside the machine chamber 320, it is connected to the deposition source delivery mechanism 20. Specifically, the adapter is connected to the pipe outlet 270. It should be noted that the connection between the adapter and the external pipe is detachable, which facilitates the disassembly, transportation, and inspection of the external deposition source delivery device and the focused ion beam machine 30. The focused ion beam needle 310 accelerates and focuses the deposition source, causing it to deposit on the sample placed inside the machine chamber 320 to achieve wiring. Specifically, the deposition wiring process in this embodiment is prior art and will not be described in detail in this application.

[0078] Specifically, the focused ion beam machine 30 used in this embodiment can be a 986 focused ion beam machine, a V600 series focused ion beam machine, or other models of focused ion beam machines.

[0079] The focused ion beam deposition wiring system provided in this embodiment provides a deposition source through an external deposition source delivery device and realizes deposition wiring inside the focused ion beam machine 30. It has a simple structure, convenient operation, and the external deposition source delivery device arranged outside the machine is convenient for disassembly, transportation, and inspection, and can save the effective space inside the focused ion beam machine 30, facilitating the reasonable setting of the spatial structure of the focused ion beam machine 30, which is beneficial to actual production applications.

[0080] The descriptions of the processes or structures corresponding to the above various drawings each have their own focuses. For parts not detailed in a certain process or structure, reference can be made to the relevant descriptions of other processes or structures.

[0081] The above embodiments merely illustrate the principles and effects of this application and are not used to limit this application. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of this application. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed in this application should still be covered by the claims of this application.

Claims

1. An external deposition source conveying device, characterized in that: It includes a deposition source container and a deposition source conveying mechanism connecting the deposition source container and an external focused ion beam machine; The deposition source container comprises a container body for loading the deposition source, a heater for heating the deposition source in the container body to gasify it, and a container gas outlet; The deposition source conveying mechanism includes a pipeline and a first manual valve, a pressure detector and a micro-adjustment valve arranged on the pipeline in sequence. One end of the pipeline is connected to the gas outlet of the container, and the other end of the pipeline is connected to the focused ion beam needle of an external focused ion beam machine. The first manual valve is arranged on a side close to the external focused ion beam machine.

2. The device according to claim 1, characterized in that The deposition source includes: liquid tungsten or liquid platinum.

3. The device according to claim 1, characterized in that The deposition source conveying mechanism further includes a second manual valve disposed on a pipeline between the micro-adjusting valve and the gas outlet of the container.

4. The device according to claim 3, characterized in that The deposition source conveying mechanism further includes a bellows disposed on a pipeline between the second manual valve and the micro-adjusting valve.

5. The device according to claim 1, characterized in that The deposition source container further includes a safety valve.

6. The device according to claim 1, characterized in that The deposition source container also includes an inspection window.

7. The device according to claim 6, characterized in that The inspection window is provided with a liquid level scale.

8. The device according to claim 6, characterized in that The height of the gas outlet of the container is higher than the height of the inspection window.

9. The device according to claim 1, characterized in that The deposition source container further includes a drain port disposed at the bottom of the container body.

10. A focused ion beam deposition inline system, characterized in that: include: The external deposition source conveying device according to any one of claims 1 to 9, and a focused ion beam machine connected to the external deposition source conveying device; The focused ion beam machine comprises a machine cavity and a focused ion beam needle, the focused ion beam needle is arranged inside the machine cavity, and the external deposition source conveying device is connected to the focused ion beam needle.

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