IGBT (Insulated Gate Bipolar Translator) vehicle single-tube power module for optimizing heat dissipation of chip

Abstract

The utility model provides an IGBT (Insulated Gate Bipolar Translator) vehicle single-tube power module for optimizing heat dissipation of a chip, which relates to the technical field of power modules and comprises an insulating heat dissipation substrate, a chip unit is arranged in the middle of the insulating heat dissipation substrate; the lead frame is connected with the insulation heat dissipation substrate, the lead frame is provided with a groove structure, and the groove structure is connected with the surface of the chip unit; the insulating heat dissipation substrate, the chip unit and the lead frame are packaged in the shell, and an outer metal layer of the insulating heat dissipation substrate is exposed out of the bottom of the shell. The packaging structure has the beneficial effects that the chip unit with higher heating is arranged in the middle of the insulating ceramic substrate, and double-sided welding is carried out on the chip by using a metal sinking groove structure, so that the packaging power density is improved, and the problem of heat dissipation caused by welding layering at the edge of the outer metal layer can be effectively solved.

Description

Technical Field

[0001] The utility model relates to the technical field of power modules, in particular to an IGBT vehicle-use single-tube power module which optimizes chip heat dissipation. Background Art

[0002] As IGBT automotive single-tube power modules are increasingly used in the field of new energy vehicles, requirements such as high power density, high operating junction temperature and high reliability are put forward for IGBT power modules.

[0003] In traditional automotive power module packaging, the trade-off between power density and heat dissipation leads to increased module size, and the requirements for external heat dissipation and installation processes are gradually increasing. Traditional power modules are often installed using thermal grease or insulating spacers. This approach increases thermal resistance while reducing heat dissipation efficiency and module reliability. Utility Model Content

[0004] In response to the problems existing in the prior art, the present invention provides an IGBT automotive single-tube power module that optimizes chip heat dissipation, comprising:

[0005] an insulating heat dissipation substrate, wherein a chip unit is provided in the middle of the insulating heat dissipation substrate;

[0006] A lead frame, the lead frame being connected to the insulating heat dissipation substrate, the lead frame being provided with a groove structure, and the groove structure being connected to the surface of the chip unit;

[0007] A housing encapsulates the insulating heat dissipation substrate, the chip unit, and the lead frame, wherein the outer metal layer of the insulating heat dissipation substrate is exposed from the bottom of the housing.

[0008] Preferably, the insulating heat dissipation substrate includes:

[0009] an insulating layer, wherein an inner metal layer is provided on a side of the insulating layer close to the chip unit, and an outer metal layer is provided on a side of the insulating layer away from the chip unit;

[0010] The chip unit is arranged on the surface of the inner metal layer.

[0011] Preferably, a power circuit etching area is provided on the surface of the inner metal layer, the lead frame includes a power input terminal, and a power input area is provided on the back of the chip unit;

[0012] The power input terminal and the power input region of the chip unit are connected to the power circuit etching region of the insulating heat dissipation substrate, and the power input terminal is exposed from the housing.

[0013] Preferably, a signal circuit etching area is provided on the surface of the inner metal layer, the lead frame includes signal terminals, and a signal area is provided on the front surface of the chip unit;

[0014] The signal circuit etching area and the signal area are connected via bonding wires;

[0015] The signal terminal is arranged on the surface of the inner metal layer, and the signal terminal is connected to the signal circuit etching area through a bonding wire, and the signal terminal is exposed from the housing.

[0016] Preferably, the front surface of the chip unit is further provided with a power output area, and the lead frame includes a power output terminal;

[0017] The power output terminal is connected to the power output area of the chip unit, and the power output terminal is exposed from the housing.

[0018] Preferably, the chip unit includes at least two chips, the groove structure is a plurality of recessed portions provided on the power output terminal, and each recessed portion is correspondingly connected to a power output region of the chip.

[0019] Preferably, the lead frame further includes a power input terminal, and a bent edge is provided between the portion of the power output terminal exposed from the housing and the recessed portion of the power output terminal, so that the portion of the power output terminal exposed from the housing is flush with the portion of the power input terminal exposed from the housing.

[0020] Preferably, a waterproof groove is provided at the contact point between the lead frame and the housing.

[0021] Preferably, the inner metal layer is copper or aluminum; and the outer metal layer is copper.

[0022] Preferably, the surface of the inner metal layer is plated with silver or nickel; the surface of the outer metal layer is plated with silver.

[0023] The above technical solution has the following advantages or beneficial effects: by arranging the chip unit with higher heat generation in the middle of the insulating ceramic substrate and using a metal-sunk groove structure to perform double-sided soldering on the chip, the power density of the package is improved, and the heat dissipation problem caused by soldering delamination at the edge of the outer metal layer can be effectively solved. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a front perspective structural diagram of an IGBT automotive single-tube power module that optimizes chip heat dissipation in a preferred embodiment of the present invention;

[0025] Figure 2This is a side perspective structural diagram of an IGBT automotive single-tube power module that optimizes chip heat dissipation in a preferred embodiment of the present invention;

[0026] Figure 3 This is a schematic structural diagram of a waterproof tank in a preferred embodiment of the present invention;

[0027] Figure 4 This is a front structural diagram of an IGBT automotive single-tube power module that optimizes chip heat dissipation in a preferred embodiment of the present invention;

[0028] Figure 5 This is a schematic diagram of the back structure of an IGBT automotive single-tube power module that optimizes chip heat dissipation in a preferred embodiment of the present invention. DETAILED DESCRIPTION

[0029] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments. The present invention is not limited to this embodiment, and other embodiments may also fall within the scope of the present invention as long as they conform to the main purpose of the present invention.

[0030] In a preferred embodiment of the present invention, based on the above problems existing in the prior art, an IGBT automotive single-tube power module with optimized chip heat dissipation is provided. Figure 1-5 Shown, including:

[0031] An insulating heat dissipation substrate 1, wherein a chip unit 2 is provided in the middle of the insulating heat dissipation substrate 1;

[0032] A lead frame 3 is connected to the insulating heat dissipation substrate 1 and is provided with a groove structure 31 , which is connected to the surface of the chip unit 2 ;

[0033] The housing 4 encapsulates the insulating heat dissipation substrate 1 , the chip unit 2 and the lead frame 3 , and the outer metal layer 11 of the insulating heat dissipation substrate 1 is exposed from the bottom of the housing 4 .

[0034] Specifically, in this embodiment, by placing the heat-generating chip unit 2 in the center of the insulating ceramic substrate 1, the heat dissipation problem caused by solder delamination at the edge of the outer metal layer 11 can be effectively resolved. Furthermore, the outer metal layer 11 of the insulating heat-dissipating substrate 1 is exposed from the bottom of the housing 4. The insulating heat-dissipating substrate 1 can quickly dissipate the heat generated by the chip unit 2, improving the heat dissipation effect.

[0035] In a preferred embodiment of the present invention, the insulating heat dissipation substrate 1 comprises:

[0036] An insulating layer 12, wherein an inner metal layer 13 is provided on a side of the insulating layer 12 close to the chip unit 2, and an outer metal layer 11 is provided on a side of the insulating layer 12 away from the chip unit 2;

[0037] The chip unit 2 is disposed on the surface of the inner metal layer 13 .

[0038] Specifically, in this embodiment, the insulating heat dissipation substrate 1 is composed of an insulating layer 12 and inner and outer metal layers 13 and 11 on both sides. The metal material has good thermal conductivity and can further optimize the heat dissipation effect on the chip unit 2 .

[0039] In a preferred embodiment of the present invention, the surface of the inner metal layer 13 is provided with a power circuit etching area, the lead frame 3 includes a power input terminal 32, and the back surface of the chip unit 2 is provided with a power input area;

[0040] The power input terminal 32 and the power input region of the chip unit 2 are connected to the power circuit etching region of the insulating heat dissipation substrate 1 , and the power input terminal 32 is exposed from the housing 4 .

[0041] Furthermore, in this embodiment, a signal circuit etching area is provided on the surface of the inner metal layer 13, the lead frame includes a signal terminal 33, and a signal area is provided on the front surface of the chip unit 2;

[0042] The signal circuit etching area and the signal area are connected via bonding wires;

[0043] The signal terminal 33 is disposed on the surface of the inner metal layer 13 , and the signal terminal 33 is connected to the signal circuit etching area through a bonding wire, and the signal terminal 33 is exposed from the housing 4 .

[0044] Furthermore, in this embodiment, the front surface of the chip unit 2 is also provided with a power output area, and the lead frame 3 includes a power output terminal 34;

[0045] The power output terminal 34 is connected to the power output area of the chip unit 2 , and the power output terminal 34 is exposed from the housing.

[0046] Furthermore, in this embodiment, the chip unit 2 includes at least two chips, and the groove structure 31 is a plurality of recessed portions provided on the power output terminal, and each recessed portion is correspondingly connected to the power output area of one chip.

[0047] Specifically, in the embodiment, the inner metal layer 13 is designed with a power circuit etching area and a signal circuit etching area, the lead frame includes a power input terminal 32, a power output terminal 34 and a signal terminal 33, and the chip unit 2 has a power input area on the back and a power output area and a signal area on the front.

[0048] The power input area on the back of the chip unit 2 is fixed to the center of the power circuit etching area of the inner metal layer 13 of the insulating heat dissipation substrate 1 by welding or sintering. The power input terminal 32 is also fixed to the upper edge of the power circuit etching area in the center of the inner metal layer 13 of the insulating heat dissipation substrate 1 by welding or sintering. Optimizing the area of the power circuit etching area improves the power density of the package. By placing the chip unit 2 (which generates higher heat) in the center of the insulating ceramic substrate 1, the heat dissipation problem caused by solder delamination at the edge of the outer metal layer 11 can be effectively solved.

[0049] The electrical signal can be led out through the power input terminal 32 in the lead frame 3 connected to the power circuit etching area and the power output terminal 34 in the lead frame 3 connected to the chip unit 2.

[0050] Furthermore, the power output terminal 34 is connected to the outer side surfaces of the plurality of recesses 31 and the front power output area of each chip included in the chip unit 2 by reflow soldering, and the soldering material is a metal substance with a melting point higher than 260°C.

[0051] Furthermore, the signal area on the front of the chip is connected to the signal circuit etching area of the insulating heat dissipation substrate 1 through the metal bonding wire 10 by ultrasonic welding technology, and jumps to the signal terminal 33 of the lead frame 3 to lead out the chip signal.

[0052] The chip unit 2 in this embodiment can be a silicon-based, silicon carbide-based, or gallium nitride-based IGBT / DOIDE / MOSFET chip. After the main body is assembled, it is encapsulated in a plastic housing 4 through an injection molding process to secure the relative positions of the various components, thereby effectively improving the creepage distance between the lead frame 3 and the outer metal layer 11 of the insulating heat dissipation substrate 1, and thus overall reliability.

[0053] Furthermore, in this embodiment, the lead frame 3 also includes a power input terminal 32, and a bent edge 35 is provided between the portion of the power output terminal 34 exposed from the housing and the lower recess 31 of the power output terminal 34, so that the portion of the power output terminal 34 exposed from the housing 4 is flush with the portion of the power input terminal 32 exposed from the housing 4.

[0054] Specifically, the recesses 31 are grooves formed by punching or extruding the metal sheet above the power output terminals 34 in the lead frame. The number, shape, and size of the recesses match the number of chips in the chip unit 2, and the surface of the recesses is required to be smooth and free of burrs. The recesses are completely located on the wall or upper side of the power output terminals 34. Bent edges 35 are provided on the power output terminals 34 to ensure that the exposed areas of the power input terminals 32 and the power output terminals 34 are flush, ensuring a high degree of consistency in the installation of the terminals.

[0055] In a preferred embodiment of the present invention, a waterproof groove 14 is provided at the contact point between the lead frame 1 and the housing 4 .

[0056] Specifically, in this embodiment, a waterproof groove 14 is provided at the contact point between the lead frame 3 and the housing 4. This groove is formed by mechanical stamping, machine milling, or laser engraving, effectively isolating the lead frame 3 from external moisture. Furthermore, etched grooves or holes are designed on the lead frame 3 to reduce mechanical stress and increase the bonding strength of the injection molded material.

[0057] In a preferred embodiment of the present invention, the inner metal layer 13 is copper or aluminum; and the outer metal layer 11 is copper.

[0058] In a preferred embodiment of the present invention, the surface of the inner metal layer 13 is plated with silver or nickel; the surface of the outer metal layer 11 is plated with silver.

[0059] The above are only preferred embodiments of the present invention and do not limit the implementation methods and protection scope of the present invention. Those skilled in the art should be aware that all solutions obtained by equivalent substitutions and obvious changes made using the contents of this specification and illustrations should be included in the protection scope of the present invention.

Claims

1. An IGBT automotive single-tube power module with optimized chip heat dissipation, characterized in that: include: an insulating heat dissipation substrate, wherein a chip unit is provided in the middle of the insulating heat dissipation substrate; A lead frame, the lead frame being connected to the insulating heat dissipation substrate, the lead frame being provided with a groove structure, and the groove structure being connected to the surface of the chip unit; A housing encapsulates the insulating heat dissipation substrate, the chip unit, and the lead frame, wherein the outer metal layer of the insulating heat dissipation substrate is exposed from the bottom of the housing.

2. The IGBT single-tube power module for automobiles according to claim 1, characterized in that: The insulating heat dissipation substrate comprises: an insulating layer, wherein an inner metal layer is provided on a side of the insulating layer close to the chip unit, and an outer metal layer is provided on a side of the insulating layer away from the chip unit; The chip unit is arranged on the surface of the inner metal layer.

3. The IGBT single-tube power module for automobiles according to claim 2, characterized in that: The surface of the inner metal layer is provided with a power circuit etching area, the lead frame includes a power input terminal, and the back side of the chip unit is provided with a power input area; The power input terminal and the power input region of the chip unit are connected to the power circuit etching region of the insulating heat dissipation substrate, and the power input terminal is exposed from the housing.

4. The IGBT single-tube power module for automobiles according to claim 2, characterized in that: A signal circuit etching area is provided on the surface of the inner metal layer, the lead frame includes signal terminals, and a signal area is provided on the front surface of the chip unit; The signal circuit etching area and the signal area are connected via bonding wires; The signal terminal is arranged on the surface of the inner metal layer, and the signal terminal is connected to the signal circuit etching area through a bonding wire, and the signal terminal is exposed from the housing.

5. The IGBT vehicle-use single-tube power module according to claim 1, characterized in that: The front of the chip unit is also provided with a power output area, and the lead frame includes a power output terminal; The power output terminal is connected to the power output area of the chip unit, and the power output terminal is exposed from the housing.

6. The IGBT single-tube power module for automobiles according to claim 5, characterized in that: The chip unit includes at least two chips, the groove structure is a plurality of recessed portions provided on the power output terminal, and each recessed portion is correspondingly connected to a power output region of the chip.

7. The IGBT single-tube power module for automobiles according to claim 6, characterized in that: The lead frame further includes a power input terminal, and a bent edge is provided between the portion of the power output terminal exposed from the housing and the recessed portion of the power output terminal, so that the portion of the power output terminal exposed from the housing is flush with the portion of the power input terminal exposed from the housing.

8. The IGBT vehicle-use single-tube power module according to claim 1, characterized in that: A waterproof groove is provided at the contact point between the lead frame and the shell.

9. The IGBT single-tube power module for automobiles according to claim 2, characterized in that: The inner metal layer is copper or aluminum; the outer metal layer is copper.

10. The IGBT single-transistor power module for automobiles according to claim 2, characterized in that: The surface of the inner metal layer is plated with silver or nickel; the surface of the outer metal layer is plated with silver.

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