Small-sized integrated diode device

Abstract

The utility model provides a small-sized integrated diode device, which comprises a tube shell provided with a cavity and more than two groups of diode functional components arranged in the cavity of the tube shell, each group of diode function components comprises a diode bare chip, a packaging electrode and a metal wire; a plurality of welding islands are arranged on the wall of the cavity; the diode bare chips and the packaging electrodes are respectively arranged on the welding islands; the cathode of the diode bare chip is attached to the welding island so that the welding island where the diode bare chip is located forms a cathode welding island, and the anode of the diode bare chip is bonded with the packaging electrode through a metal wire so that the welding island where the packaging electrode is located forms an anode welding island; and an electric gap is formed between every two adjacent welding islands. According to the diode device, a plurality of diodes are integrated, and the space size occupied by the diodes in a circuit can be greatly optimized, so that the size and the weight of equipment are reduced, the time for reflow soldering is reduced, the efficiency is higher, and the requirements of miniaturization, light weight and high efficiency of the current market are met.

Description

Technical Field

[0001] The utility model relates to the technical field of diode chips, and more specifically to a small integrated diode device. Background Art

[0002] As electronic packaging technology gradually develops towards miniaturization and integration, more and more electronic systems have put forward the demand for miniaturization and lightweighting to achieve high-density integration of devices or components.

[0003] Most older diodes are hermetically sealed in square or cylindrical leadless metal-ceramic tubes, widely used in surface mount applications. For example, the MA-COM 1072 package measures approximately 3.4mm × 2.4mm × 2.4mm. Multiple diodes are often combined in applications such as frequency hopping (FH) and filtering. Considering electrical clearances for soldering and other assembly procedures, the space occupied by these diodes in parallel is often very large, making it difficult to reduce the size of these systems. Due to the inherent size limitations of current diode packages, further miniaturization is difficult.

[0004] Therefore, it is necessary to design a new type of diode structure to reduce the space occupied by the diode. Utility Model Content

[0005] In order to overcome the shortcomings and deficiencies in the prior art, the purpose of the present invention is to provide a small integrated diode device; the diode device integrates multiple diodes into one, which can greatly optimize the space size occupied by the diode in the circuit, thereby helping to reduce the size and weight of the device, and reduce the time required for reflow soldering, which is more efficient and meets the current market demand for miniaturization, lightweight and high efficiency.

[0006] In order to achieve the above-mentioned object, the present invention is implemented through the following technical solution: a small integrated diode device, including a tube shell with a cavity, and two or more groups of diode functional components arranged in the tube shell cavity; each group of diode functional components includes: a diode bare chip, a packaging electrode and a metal wire; a plurality of welding islands are provided on the cavity wall; each diode bare chip and the packaging electrode are respectively arranged on the welding island; the cathode of the diode bare chip is attached to the welding island so that the welding island where the diode bare chip is located forms a negative electrode welding island, and the anode of the diode bare chip is bonded to the packaging electrode through the metal wire so that the welding island where the packaging electrode is located forms a positive electrode welding island; and an electrical gap is respectively provided between adjacent welding islands.

[0007] The diode device of the present invention integrates multiple diodes into one body. When applied to a circuit using multiple diodes, compared with independently packaged diodes, the present invention can significantly optimize the space occupied by the diodes in the circuit, thereby helping to reduce the size and weight of the equipment. Moreover, the diode device of the present invention is reflow-soldered as a single integrated device, which takes less time and is more efficient than reflow-soldering multiple independently packaged diodes. The present invention better meets the current market demand for miniaturization, lightweighting, and high efficiency.

[0008] Preferably, the tube shell cavity is filled with an insulating medium. The insulating medium can be made of existing materials such as inert gas and gel, which can improve the insulation performance between devices.

[0009] Preferably, in the tube shell cavity, the positive electrode welding islands and the negative electrode welding islands are arranged in rows, and the positive electrode welding islands and the negative electrode welding islands are positioned opposite to each other in a one-to-one manner.

[0010] This arrangement enables the side-by-side arrangement of each group of diode functional components, thereby improving the consistency of the performance of each group of diode functional components.

[0011] Preferably, the electrical gap between adjacent positive electrode welding islands and the electrical gap between adjacent negative electrode welding islands are the same, both N; the electrical gap between the positive electrode welding island and the negative electrode welding island is M.

[0012] Preferably, the electrical gap M and the electrical gap N have a value range of: M≥0.4mm; N≥0.4mm. The electrical gaps thus set can meet the electrical performance and insulation performance.

[0013] Preferably, the diode bare chip is a flat-plate diode bare chip with a circular positive electrode and a square negative electrode.

[0014] Preferably, the tube shell comprises a tube shell body and a tube cap; the cavity is arranged in the tube shell body; and the tube cap is covered at the opening of the cavity to achieve sealing of the cavity.

[0015] Preferably, the tube shell is a ceramic tube shell; the diode bare chip is a high-voltage silicon PIN diode bare chip; the packaging electrode is a molybdenum copper sheet; and the metal wire is a gold wire. Using the molybdenum copper sheet as the packaging electrode can improve heat dissipation.

[0016] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0017] 1. The diode device of the present invention integrates multiple diodes into one body. When applied to a circuit using multiple diodes, compared to independently packaged diodes, the present invention can significantly optimize the space occupied by the diodes in the circuit, thereby reducing the size and weight of the device. Furthermore, reflow soldering of the diode device as a single integrated device takes less time and is more efficient than reflow soldering of multiple independently packaged diodes. The present invention better meets the current market demand for miniaturization, lightweighting, and high efficiency.

[0018] 2. The diode device of the present invention has good electrical clearance and insulation performance between each group of diode functional components, and has good performance consistency. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a schematic structural diagram of a small integrated diode device of the utility model;

[0020] Figure 2 This is one of the internal structure diagrams of the small integrated diode device of the utility model;

[0021] Figure 3 This is the second schematic diagram of the internal structure of the small integrated diode device of the utility model;

[0022] Figure 4 This is a schematic diagram of the external structure of the small integrated diode device of the utility model;

[0023] Figure 5 1 is a schematic diagram of the internal structure of a small integrated diode device according to the second embodiment;

[0024] Among them, 1 is the tube shell body, 2 is the package electrode, 3 is the diode bare chip, 4 is the metal wire, 5 is the tube cap, and 6 is the welding island. DETAILED DESCRIPTION

[0025] The present invention will be described in further detail below with reference to the accompanying drawings and specific implementations.

[0026] Example 1

[0027] like Figures 1 to 4 As shown, this embodiment provides a small integrated diode device, including a tube housing with a cavity and a diode functional component. The tube housing includes a tube housing body 1 and a tube cap 5. The cavity is disposed within the tube housing body 1. The tube cap 5 covers the cavity opening to seal the cavity.

[0028] In this embodiment, there are four groups of diode functional components arranged in the tube shell cavity. Each group of diode functional components includes: a diode bare chip 3, a packaging electrode 2 and a metal wire 4.

[0029] The tube shell refers to a ceramic tube shell; the diode bare chip 3 refers to a high-voltage silicon PIN diode bare chip, whose positive electrode is round and the negative electrode is square, and the whole is flat; the high-voltage silicon PIN diode bare chip can adopt existing technology; the packaging electrode 2 refers to a molybdenum copper sheet; the metal wire 4 refers to a gold wire.

[0030] Several welding islands 6 are provided on the cavity wall; each diode bare chip 3 and packaging electrode 2 is respectively arranged on the welding island 6; the negative electrode of the diode bare chip 3 is attached to the welding island 6 so that the welding island 6 where the diode bare chip 3 is located forms a negative electrode welding island, and the positive electrode of the diode bare chip 3 is bonded to the packaging electrode 2 through the metal wire 4 so that the welding island 6 where the packaging electrode 2 is located forms a positive electrode welding island.

[0031] Within the tube shell cavity, the positive and negative electrode welding islands are arranged in rows, with the positive and negative electrode welding islands facing each other one-to-one. This structure allows the side-by-side arrangement of each group of diode functional components, improving the consistency of the performance of each group of diode functional components.

[0032] Electrical gaps are set between adjacent positive electrode weld islands, between adjacent negative electrode weld islands, and between positive and negative electrode weld islands. The electrical gap between adjacent positive electrode weld islands and the electrical gap between adjacent negative electrode weld islands are the same, N. The electrical gap between the positive and negative electrode weld islands is M. The values of the electrical gaps M and N are preferably within the range of M ≥ 0.4 mm and N ≥ 0.4 mm. This electrical gap setting ensures satisfactory electrical and insulation performance.

[0033] The diode device of the present invention integrates multiple diodes into one body. When applied to a circuit using multiple diodes, compared with independently packaged diodes, the present invention can significantly optimize the space occupied by the diodes in the circuit, thereby helping to reduce the size and weight of the equipment. Moreover, the diode device of the present invention is reflow-soldered as a single integrated device, which takes less time and is more efficient than reflow-soldering multiple independently packaged diodes. The present invention better meets the current market demand for miniaturization, lightweighting, and high efficiency.

[0034] The following compares the space occupied by the diode assembly of this embodiment with that of four independent -1072 packaged diodes assembled side by side:

[0035] In this embodiment, the following dimensions are taken as an example: the width of the diode bare chip, package electrode and welding island are all 0.7 mm, the electrical gap N is 0.8 mm, M is 1.2 mm, the distance L between the outermost welding island and the edge is 0.5 mm, and the welding island size is 0.7 mm × 0.9 mm; the dimensions of the diode device of the present invention are: length = 0.7 × 4 + 0.8 × 3 + 0.5 × 2 = 6.2 mm, width = 0.9 × 2 + 1.2 = 3 mm, height = 2.5 mm.

[0036] The space occupied by four -1072 packaged diodes assembled side by side, assuming a 0.8mm electrical clearance, is: length = (2.4 × 4 + 0.8 × 3) = 12mm, width 3.4mm, height 2.4mm. In comparison, the diode assembly in this embodiment reduces its footprint by nearly 50%, significantly optimizing the space occupied by the diodes in the system.

[0037] Example 2

[0038] This embodiment is a small integrated diode device. The difference from the first embodiment is that in this embodiment, the diode functional components are two groups, which are arranged in the tube shell cavity. Figure 5 In practical applications, the diode functional components can also be in groups of three, four, five, six, seven, or even more. The rest of the structure of this embodiment is the same as that of the first embodiment.

[0039] Example 3

[0040] This embodiment provides a small integrated diode device. It differs from the first or second embodiment in that the tube cavity is filled with an insulating medium. This insulating medium can be made of existing materials such as an inert gas or gel, which improves insulation performance between components. The remaining structure of this embodiment is the same as that of the first or second embodiment.

[0041] The above embodiments are preferred implementation methods of the present invention, but the implementation methods of the present invention are not limited to the above embodiments. Any other changes, modifications, substitutions, combinations, and simplifications that do not deviate from the spirit and principles of the present invention should be considered as equivalent replacement methods and are included in the scope of protection of the present invention.

Claims

1. A small integrated diode device, characterized in that: It includes a tube shell with a cavity, and two or more groups of diode functional components arranged in the tube shell cavity; each group of diode functional components includes: a diode bare chip, a packaging electrode and a metal wire; a number of welding islands are provided on the cavity wall; each diode bare chip and the packaging electrode are respectively arranged on the welding island; the cathode of the diode bare chip is attached to the welding island so that the welding island where the diode bare chip is located forms a negative welding island, and the anode of the diode bare chip is bonded to the packaging electrode through the metal wire so that the welding island where the packaging electrode is located forms a positive welding island; and an electrical gap is provided between adjacent welding islands.

2. The small integrated diode device according to claim 1, wherein: The tube shell cavity is filled with an insulating medium.

3. The small integrated diode device according to claim 1, wherein: In the tube shell cavity, the positive electrode welding islands and the negative electrode welding islands are arranged in rows, and the positive electrode welding islands and the negative electrode welding islands are positioned opposite to each other in a one-to-one manner.

4. The small integrated diode device according to claim 3, wherein: The electrical gap between adjacent positive electrode welding islands and the electrical gap between adjacent negative electrode welding islands are the same, both N; the electrical gap between the positive electrode welding island and the negative electrode welding island is M.

5. The small integrated diode device according to claim 4, wherein: The value range of the electrical gap M and the electrical gap N is: M ≥ 0.4 mm; N≥0.4mm.

6. The small integrated diode device according to claim 1, wherein: The diode bare chip is a flat-plate diode bare chip with a circular positive electrode and a square negative electrode.

7. The small integrated diode device according to claim 1, wherein: The tube shell comprises a tube shell body and a tube cap; the cavity is arranged in the tube shell body; the tube cap is arranged at the opening of the cavity to achieve cavity sealing.

8. The small integrated diode device according to claim 1, wherein: The tube shell refers to a ceramic tube shell; the diode bare chip refers to a high-voltage silicon PIN diode bare chip; the packaging electrode refers to a molybdenum copper sheet; and the metal wire refers to a gold wire.

Images