Efficient compact LED driver

Abstract

The utility model provides an efficient compact type LED driver. The efficient compact type LED driver is composed of a driver shell, a transmission wire, a circuit device and heat dissipation silica gel. The driver shell comprises an upper cover shell and a base shell, and an electronic device containing cavity is formed in the driver shell and used for fixing the circuit device. The circuit device comprises a plurality of gallium nitride components, an anti-interference rectification input circuit, an active power factor correction circuit, an isolation conversion circuit, a main control circuit and a rectification filtering output circuit. The active power factor correction circuit and the isolation conversion circuit respectively adopt gallium nitride switch tubes, and gallium nitride semiconductors have the characteristics of low on resistance, high breakdown voltage, small size and light weight, so that the gallium nitride switch tubes can efficiently work at high frequency, energy loss is reduced, the energy conversion efficiency of the efficient compact LED driver is improved, and the service life of the efficient compact LED driver is prolonged. Therefore, the high-efficiency compact LED driver is suitable for light and thin LED lamps.

Description

Technical Field

[0001] The present disclosure relates to the technical field of LED drivers, and in particular to a high-efficiency and compact LED driver. Background Art

[0002] With the rapid development of LED lighting technology, the performance and size of LED drivers, as core components, have become key factors restricting the application of LED lamps. Traditional LED drivers mostly use conventional semiconductor materials. However, while silicon-based semiconductor device materials are technologically mature, they cannot meet the requirements of high-efficiency, compact applications. Furthermore, due to the inherent physical limitations of conventional semiconductor materials, such as high heat generation rates and relatively low breakdown electric fields, drivers generate significant heat during operation, requiring additional cooling measures. Furthermore, their switching frequency and conversion efficiency are also limited, making further reduction in driver size difficult.

[0003] Gallium nitride (GaN), a new semiconductor material, is gaining widespread attention in the industry due to its excellent electrical properties. GaN's low heat generation and high breakdown electric field give it significant advantages in the fabrication of high-efficiency switching power supplies. Furthermore, compared to conventional semiconductor materials, GaN devices can operate at higher frequencies and exhibit lower conduction losses, effectively improving power conversion efficiency. Furthermore, GaN devices offer excellent thermal stability, maintaining stable performance at higher temperatures. This further reduces the need for heat dissipation measures in drivers and facilitates their miniaturization. Utility Model Content

[0004] The purpose of the present disclosure is to overcome the deficiencies in the prior art and to provide a compact, energy-saving, and highly efficient LED driver.

[0005] The purpose of this disclosure is achieved through the following technical solutions:

[0006] A high-efficiency, compact LED driver comprises a driver housing, a transmission wire, a circuit device, and heat-dissipating silicone. The driver housing comprises an upper cover housing and a base housing, the upper cover housing being disposed on the base housing. The driver housing is provided with an electronic device accommodating cavity, the circuit device being fixed within the electronic device accommodating cavity, the transmission wire being connected to the circuit device, and the heat-dissipating silicone being disposed within the electronic device accommodating cavity and covering the circuit device.

[0007] The circuit device includes a gallium nitride component module and a driver circuit, and the gallium nitride component module is arranged in the circuit device.

[0008] The driver circuit comprises an anti-interference rectifier input circuit, an active power factor correction circuit, an isolation conversion circuit, a main control circuit and a rectification filtering output circuit, an output end of the anti-interference rectifier input circuit is connected with an input end of the active power factor correction circuit, an output end of the active power factor correction circuit is connected with an input end of the isolation conversion circuit, an output end of the isolation conversion circuit is connected with an input end of the rectification filtering output circuit, and an output end of the rectification filtering output circuit is used for outputting direct current to a load.

[0009] The active power factor correction circuit comprises a first gallium nitride switch tube and a first voltage dividing resistor, a first end of the first gallium nitride switch tube is connected with the input end of the active power factor correction circuit, a control end of the first gallium nitride switch tube is connected with a PFC control signal end of the main control circuit through the first voltage dividing resistor, and a second end of the first gallium nitride switch tube is connected with a grounding end.

[0010] The isolation conversion circuit comprises a second gallium nitride switch tube, a third gallium nitride switch tube, a second voltage dividing resistor and a third voltage dividing resistor, a first end of the second gallium nitride switch tube is connected with an output end of the active power factor correction circuit, a control end of the second gallium nitride switch tube is connected with a boost control signal end of the main control circuit through the second voltage dividing resistor, a second end of the second gallium nitride switch tube is connected with the output end of the isolation conversion circuit and a first end of the third gallium nitride switch tube respectively, a control end of the third gallium nitride switch tube is connected with a buck control signal end of the main control circuit through the third voltage dividing resistor, and a second end of the third gallium nitride switch tube is grounded, wherein the gallium nitride component module comprises the first gallium nitride switch tube, the second gallium nitride switch tube and the third gallium nitride switch tube.

[0011] In one of the embodiments, the active power factor correction circuit further comprises a first patch magnetic bead, a first end of the first patch magnetic bead is connected with a second end of the first voltage dividing resistor, and a second end of the first patch magnetic bead is connected with the control end of the first gallium nitride switch tube.

[0012] In one of the embodiments, the active power factor correction circuit further comprises a first current limiting resistor, a first end of the first current limiting resistor is connected with the first voltage dividing resistor, and a second end of the first current limiting resistor is connected with the control end of the first gallium nitride switch tube.

[0013] In one of the embodiments, the active power factor correction circuit further comprises a first bias resistor, a first end of the first bias resistor is connected with the control end of the first gallium nitride switch tube, and a second end of the first bias resistor is connected with the second end of the first gallium nitride switch tube.

[0014] In one embodiment, the isolation conversion circuit further includes a second bias resistor, wherein a first end of the second bias resistor is connected to the control end of the second gallium nitride switch tube, and a second end of the second bias resistor is connected to the second end of the second gallium nitride switch tube.

[0015] In one embodiment, the isolation conversion circuit further includes a second chip bead, wherein the first end of the second chip bead is connected to the second end of the second voltage divider resistor, and the second end of the second chip bead is connected to the control end of the second gallium nitride switch tube.

[0016] In one embodiment, the anti-interference rectifier input circuit includes an overvoltage protection circuit, an EMC filter circuit and a bridge rectifier filter circuit. The input end of the overvoltage protection circuit is used to connect to an external AC power supply, the output end of the overvoltage protection circuit is connected to the input end of the EMC filter circuit, the output end of the EMC filter circuit is connected to the input end of the bridge rectifier filter circuit, and the output end of the bridge rectifier filter circuit is connected to the input end of the active power factor correction circuit.

[0017] In one embodiment, the rectification and filtering output circuit includes a synchronous rectification circuit, a secondary feedback circuit and an output filtering circuit, the input end of the synchronous rectification circuit is connected to the output end of the isolation conversion circuit, the output end of the synchronous rectification circuit is connected to the input end of the output filtering circuit, the output end of the synchronous rectification circuit is also connected to the input end of the secondary feedback circuit, the output end of the secondary feedback circuit is connected to the feedback detection end of the main control circuit, and the output end of the output filtering circuit is used to output a DC voltage to a load.

[0018] In one embodiment, the base shell is provided with an input line slot and an output line slot, and the transmission wire includes a driver input line and a driver output line. The driver input line is passed through the input line slot and connected to one end of the circuit device, and the driver output line is passed through the output line slot and connected to the other end of the circuit device.

[0019] In one embodiment, a plurality of snap-fit ​​grooves are provided on the outer periphery of the upper cover shell, and a plurality of snap-fit ​​members are provided on the inner wall of the base shell, and each of the snap-fit ​​members is snap-fitted into one of the snap-fit ​​grooves.

[0020] Compared with the prior art, the present disclosure has at least the following advantages:

[0021] 1. In the aforementioned high-efficiency, compact LED driver, due to the extremely low on-resistance, high breakdown voltage, small size, and light weight of gallium nitride semiconductors, the first, second, and third gallium nitride switching transistors can reduce energy loss during the switching process, thereby improving the energy conversion efficiency of the high-efficiency, compact LED driver and reducing the size of the high-efficiency, compact LED driver. This facilitates the application of the high-efficiency, compact LED driver in thin and lightweight LED lamps and improves the adaptability and practicality of the high-efficiency, compact LED driver. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present disclosure and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0023] Figure 1 Schematic diagram of the structure of a high-efficiency and compact LED driver according to one embodiment;

[0024] Figure 2 for Figure 1 Exploded diagram of a high-efficiency and compact LED driver shown;

[0025] Figure 3 for Figure 2 A schematic structural diagram of the circuit device shown;

[0026] Figure 4 for Figure 2 A circuit diagram of the driver circuit shown;

[0027] Figure 5 for Figure 4 The circuit diagram of the anti-interference rectifier input circuit shown;

[0028] Figure 6 for Figure 4 The circuit diagram of the active power factor correction circuit shown;

[0029] Figure 7 for Figure 4 The circuit diagram of the isolation conversion circuit shown;

[0030] Figure 8 for Figure 4 The circuit diagram of the main control circuit shown;

[0031] Figure 9 for Figure 4 The circuit diagram of the rectifier and filter output circuit is shown. DETAILED DESCRIPTION

[0032] To facilitate understanding of the present disclosure, a more comprehensive description of the present disclosure will be provided below with reference to the accompanying drawings. The accompanying drawings illustrate preferred embodiments of the present disclosure. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the disclosure.

[0033] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly attached to the other element or there may be an intermediate element. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. The terms "vertical," "horizontal," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only implementation methods.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this disclosure pertains. The terms used herein in the specification of this disclosure are intended only to describe specific embodiments and are not intended to limit this disclosure. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0035] In order to better understand the technical solutions and beneficial effects of the present disclosure, the present disclosure is further described in detail below with reference to specific embodiments:

[0036] like Figures 1 to 9 As shown, an efficient and compact LED driver 10 according to an embodiment of the present disclosure includes a driver housing 100, a transmission wire 200, a circuit device 300 and a heat dissipating silicone rubber 400. The driver housing 100 includes an upper cover housing 110 and a base housing 120. The upper cover housing 110 is covered on the base housing 120. The driver housing 100 is provided with an electronic device accommodating cavity 1001. The circuit device 300 is fixed in the electronic device accommodating cavity 1001. The transmission wire 200 is connected to the circuit device 300. The heat dissipating silicone rubber 400 is arranged in the electronic device accommodating cavity 1001 and covers the circuit device 300.

[0037] The circuit device 300 includes a GaN component module 310 and a driver circuit 320 . The GaN component module 310 is disposed in the circuit device 300 .

[0038] The driver circuit 320 comprises an anti-interference rectifier input circuit 321, an active power factor correction circuit 322, an isolation conversion circuit 323, a main control circuit 324 and a rectification filtering output circuit 325. The output end of the anti-interference rectifier input circuit 321 is connected with the input end of the active power factor correction circuit 322. The output end of the active power factor correction circuit 322 is connected with the input end of the isolation conversion circuit 323. The output end of the isolation conversion circuit 323 is connected with the input end of the rectification filtering output circuit 325. The output end of the rectification filtering output circuit 325 is used for outputting direct current to a load.

[0039] The active power factor correction circuit 322 comprises a first gallium nitride switch tube Q1 and a first voltage dividing resistor R5. The first end of the first gallium nitride switch tube Q1 is connected with the input end of the active power factor correction circuit 322. The control end of the first gallium nitride switch tube Q1 is connected with the PFC control signal end GATEPFC of the main control circuit 324 through the first voltage dividing resistor R5. The second end of the first gallium nitride switch tube Q1 is connected with a ground end.

[0040] The isolation conversion circuit 323 comprises a second gallium nitride switch tube Q3, a third gallium nitride switch tube Q2, a second voltage dividing resistor R27 and a third voltage dividing resistor R26. The first end of the second gallium nitride switch tube Q3 is connected with the output end of the active power factor correction circuit 322. The control end of the second gallium nitride switch tube Q3 is connected with the boost control signal end GATEHS of the main control circuit 324 through the second voltage dividing resistor R27. The second end of the second gallium nitride switch tube Q3 is connected with the output end of the isolation conversion circuit 323 and the first end of the third gallium nitride switch tube Q2 respectively. The control end of the third gallium nitride switch tube Q2 is connected with the step-down control signal end LDRV of the main control circuit 324 through the third voltage dividing resistor R26. The second end of the third gallium nitride switch tube Q2 is grounded. The gallium nitride component module 310 comprises the first gallium nitride switch tube Q1, the second gallium nitride switch tube Q2 and the third gallium nitride switch tube Q3.

[0041] In this embodiment, when the main control circuit 324 detects a change in input voltage and requires power factor adjustment, the microcontroller U1 in the main control circuit 324 outputs a high-level signal via the PFC control signal terminal GATEPFC. This signal is transmitted to the control terminal of the first GaN switch Q1 via the first voltage divider resistor R5, causing the voltage at the control terminal of the first GaN switch Q1 to exceed its conduction threshold voltage. This turns the first GaN switch Q1 into a conducting state, allowing current to flow from the input terminal of the active power factor correction circuit 322 through the first GaN switch Q1, forming a low-impedance current path to ground. This in turn causes the energy storage inductor T1 in the active power factor correction circuit 322 to begin storing energy. When the PFC control signal terminal GATEPFC outputs a low-level signal, the first GaN switch Q1 is turned off, interrupting the current path. Due to the energy storage characteristics of the energy storage inductor T1, it generates a back electromotive force, maintaining the normal operation of the active power factor correction circuit 322.

[0042] Furthermore, when the boost control signal terminal GATEHS of the main control circuit 324 outputs a high-level signal, the voltage at the control terminal of the second GaN switch tube Q3 is greater than its conduction threshold voltage, so that the second GaN switch tube Q3 is in the on state, allowing current to flow from the output terminal of the active power factor correction circuit 322 through the second GaN switch tube Q3 and be transmitted to the output terminal of the isolation conversion circuit 323. When the boost control signal terminal GATEHS of the main control circuit 324 outputs a low-level signal, the control terminal voltage of the second GaN switch Q3 is lower than its conduction threshold voltage, causing the second GaN switch Q3 to be in an off-state. This cuts off the current path flowing through the second GaN switch Q3. Due to the energy storage characteristics of the resonant inductor T2 in the isolation conversion circuit 323, it generates a reverse electromotive force. When the buck control signal terminal LDRV of the main control circuit 324 outputs a high-level signal, the control terminal voltage of the third GaN switch Q2 is higher than its conduction threshold voltage, causing the third GaN switch Q2 to be in an on-state. This allows the coupled low-voltage DC current to pass through the third GaN switch Q2 and form a complete current loop with the ground terminal. The reverse electromotive force, through the freewheeling function of the third GaN switch Q2 and the coupling function of the isolation transformer, continues to transfer energy to the rectifier and filter output circuit 325. When the step-down control signal terminal LDRV of the main control circuit 324 outputs a low-level signal, the voltage at the control terminal of the third GaN switch Q2 is lower than its turn-on threshold voltage, so that the third GaN switch Q2 is in the off state, thereby cutting off the current path flowing through the third GaN switch Q2.

[0043] In the aforementioned high-efficiency, compact LED driver 10, due to the extremely low on-resistance, high breakdown voltage, small size, and light weight of gallium nitride semiconductors, the first gallium nitride switch transistor Q1, the second gallium nitride switch transistor Q3, and the third gallium nitride switch transistor Q2 can reduce energy loss during the switching process, thereby improving the energy conversion efficiency of the high-efficiency, compact LED driver 10 while reducing the size of the high-efficiency, compact LED driver 10. This facilitates the application of the high-efficiency, compact LED driver 10 in thin and lightweight LED lamps and improves the adaptability and practicality of the high-efficiency, compact LED driver 10.

[0044] like Figure 6 and Figure 8 As shown, in one embodiment, the active power factor correction circuit 322 further includes a first chip bead B1, wherein a first end of the first chip bead B1 is connected to the second end of the first voltage divider resistor R5, and a second end of the first chip bead B1 is connected to the control terminal of the first GaN switch Q1. In this embodiment, the first chip bead B1 can effectively absorb and filter out high-frequency noise and interference signals in the circuit, thereby enhancing the stability and anti-interference capability of the first GaN switch Q1. Specifically, when the main control circuit 324 outputs a high-level control signal through the PFC control signal terminal GATEPFC and, after voltage division by the first voltage divider resistor R5, the control signal is transmitted through the first chip bead B1 to the control terminal of the first GaN switch Q1, causing the voltage at the control terminal of the first GaN switch Q1 to exceed its conduction threshold voltage and enter the on state. At this time, the first chip bead B1 absorbs and attenuates the high-frequency noise components in the high-level control signal, thereby ensuring the stability of the signal transmitted to the control terminal of the first GaN switch Q1.

[0045] like Figure 6 and Figure 8 As shown, in one embodiment, the active power factor correction circuit 322 further includes a first current-limiting resistor R10, a first end of which is connected to the first voltage-dividing resistor R5, and a second end of which is connected to the control end of the first GaN switch Q1. In this embodiment, when the main control circuit 324 outputs a high-level control signal via the PFC control signal terminal GATEPFC, the first end of the first current-limiting resistor R10 is connected to the first voltage-dividing resistor R5, while the second end is directly connected to the control end of the first GaN switch Q1. Thus, the first current-limiting resistor R10, together with the first voltage-dividing resistor R5, forms a voltage-dividing and current-limiting network for the PFC control signal of the main control circuit 324. This allows the first current-limiting resistor R10 to effectively limit the current flowing into the control end of the first GaN switch Q1, preventing damage to the switch or affecting its normal operation due to excessive current. This ensures that the control signal is stably transmitted to the control end of the first GaN switch Q1, thereby achieving effective control of the active power factor correction circuit 322.

[0046] As shown in Figure 6 and Figure 8 In one embodiment, the active power factor correction circuit 322 further comprises a first bias resistor R17, a first end of the first bias resistor R17 is connected to the control end of the first gallium nitride switch tube Q1, and a second end of the first bias resistor R17 is connected to the second end of the first gallium nitride switch tube Q1. In this embodiment, when the main control circuit 324 outputs a low-level control signal to the control end of the first gallium nitride switch tube Q1 through the PFC control signal end GATEPFC, the first bias resistor R17 can provide a pull-down current path at this time, so that the voltage at the control end of the first gallium nitride switch tube Q1 rapidly decreases below the cutoff voltage, thereby ensuring that the first gallium nitride switch tube Q1 can enter the cutoff state, and it is beneficial to reduce the leakage current of the first gallium nitride switch tube Q1 in the cutoff state, thereby improving the stability of the active power factor correction circuit 322.

[0047] As shown in Figure 7 and Figure 8 In one embodiment, the isolation conversion circuit 323 further comprises a second bias resistor R32, a first end of the second bias resistor R32 is connected to the control end of the second gallium nitride switch tube Q3, and a second end of the second bias resistor R32 is connected to the second end of the second gallium nitride switch tube Q3. In this embodiment, when the boost control signal end GATEHS of the main control circuit 324 outputs a low-level control signal to the control end of the second gallium nitride switch tube Q3, the second bias resistor R32 can provide a pull-down current path at this time, so that the voltage at the control end of the second gallium nitride switch tube Q3 rapidly decreases below the cutoff voltage, thereby ensuring that the second gallium nitride switch tube Q3 can enter the cutoff state, and it is beneficial to reduce the leakage current of the second gallium nitride switch tube Q3 in the cutoff state, thereby improving the stability of the isolation conversion circuit 323.

[0048] As shown in Figure 7 and Figure 8As shown, in one embodiment, the isolation conversion circuit 323 further includes a second chip bead B6, a first end of which is connected to the second end of the second voltage-divider resistor R27, and a second end of which is connected to the control terminal of the second GaN switch Q3. In this embodiment, the second chip bead B6 can effectively absorb and filter out high-frequency noise and interference signals in the circuit, thereby enhancing the stability and anti-interference capability of the second GaN switch Q3. Specifically, when the boost control signal terminal GATEHS of the main control circuit 324 outputs a high-level control signal, after being divided by the second voltage-divider resistor R27, the control signal is transmitted through the second chip bead B6 to the control terminal of the second GaN switch Q3, causing the voltage at the control terminal of the second GaN switch Q3 to exceed its conduction threshold voltage and enter the conduction state. At this time, the second chip bead B6 absorbs and attenuates the high-frequency noise components in the high-level control signal, thereby ensuring the stability of the signal transmitted to the control terminal of the second GaN switch Q3.

[0049] like Figure 5 As shown, in one embodiment, the anti-interference rectifier input circuit 321 includes an overvoltage protection circuit 3211, an EMC filter circuit 3212, and a bridge rectifier filter circuit 3213. The input of the overvoltage protection circuit 3211 is connected to an external AC power source, the output of the overvoltage protection circuit 3211 is connected to the input of the EMC filter circuit 3212, the output of the EMC filter circuit 3212 is connected to the input of the bridge rectifier filter circuit 3213, and the output of the bridge rectifier filter circuit 3213 is connected to the input of the active power factor correction circuit 322. In this embodiment, when an external AC power source is connected to the input of the overvoltage protection circuit 3211, the overvoltage protection circuit 3211 monitors the amplitude of the input voltage. Once the voltage exceeds a preset safety threshold, the overvoltage protection circuit 3211 responds quickly and cuts off the power input, effectively preventing damage to subsequent circuits caused by excessive voltage and ensuring the safe operation of the entire LED driver. The AC power processed by overvoltage protection circuit 3211 then enters EMC filter circuit 3212, which filters out high-frequency noise and electromagnetic interference in the AC power, thereby ensuring that bridge rectifier filter circuit 3213 receives a stable current. Bridge rectifier filter circuit 3213 converts the AC power into pulsating DC power, further smoothes it through filter capacitors, and outputs a relatively stable DC voltage to the input of active power factor correction circuit 322, thereby ensuring the normal operation of active power factor correction circuit 322.

[0050] like Figure 9As shown, in one embodiment, the rectifier, filter, and output circuit 325 includes a synchronous rectifier circuit 3251, a secondary feedback circuit 3252, and an output filter circuit 3253. The input of the synchronous rectifier circuit 3251 is connected to the output of the isolation converter circuit 323, and the output of the synchronous rectifier circuit 3251 is connected to the input of the output filter circuit 3253. The output of the synchronous rectifier circuit 3251 is also connected to the input of the secondary feedback circuit 3252. The output of the secondary feedback circuit 3252 is connected to the feedback detection terminal of the main control circuit 324. The output of the output filter circuit 3253 is used to output a DC voltage to the load. In this embodiment, when the isolation converter circuit 323 alternately conducts the second and third GaN switches Q3 and Q2, and transmits the converted DC voltage to the input of the synchronous rectifier circuit 3251, the DC power output by the synchronous rectifier circuit 3251 then enters the output filter circuit 3253. The filter capacitor of the output filter circuit 3253 further smooths the pulsating components of the DC power, thereby reducing the ripple of the output voltage and ensuring a stable DC power supply to the load. Simultaneously, the secondary feedback circuit 3252 obtains voltage or current information from the output of the synchronous rectifier circuit 3251 and feeds it back to the feedback detection terminal of the main control circuit 324. Based on the received feedback information, the main control circuit 324 dynamically adjusts the operating states of the active power factor correction circuit 322, the isolation conversion circuit 323, and the synchronous rectifier circuit 3251, thereby achieving precise control and stable regulation of the output voltage. This ensures that the LED driver can provide a constant output voltage under different load conditions, thereby enhancing the stability and reliability of the efficient and compact LED driver 10.

[0051] like Figure 2 As shown, in one embodiment, the base housing 120 is provided with an inlet slot 1201 and an outlet slot 1202. The transmission conductors 200 include a driver input line 210 and a driver output line 220. The driver input line 210 is routed through the inlet slot 1201 and connected to one end of the circuit device 300, while the driver output line 220 is routed through the outlet slot 1202 and connected to the other end of the circuit device 300. In this embodiment, the driver input line 210 draws electrical energy from an external power source, enters the electronic device housing 1001 through the inlet slot 1201, and securely connects to the input end of the circuit device 300, providing the power required for the entire LED driver to operate. Conversely, the driver output line 220 is responsible for outputting the stable DC power converted by the circuit device 300 to the load, thereby ensuring efficient transmission of electrical energy within the circuit device 300.

[0052] like Figure 2As shown, in one of the embodiments, the upper cover shell 110 is provided with a plurality of clamping grooves 1101 around its periphery, and the inner wall of the base shell 120 is provided with a plurality of clamping pieces 121, each of which is clamped in one of the clamping grooves 1101. In this embodiment, when the upper cover shell 110 needs to be installed on the base shell 120, the clamping grooves 1101 and the clamping pieces 121 are simply aligned and pressed, and the clamping pieces 121 are automatically buckled with the clamping grooves 1101, so that no additional fixing tools or screws are needed to complete the assembly process, thereby improving the installation efficiency of the high-efficiency compact LED driver 10. At the same time, the clamping structure formed by the clamping pieces 121 and the clamping grooves 1101 enables the base shell 120 and the upper cover shell 110 to be tightly connected, effectively preventing external environment from interfering with the internal circuit device 300, thereby protecting the internal circuit device 300 from environmental factors and improving the stability of the high-efficiency compact LED driver 10.

[0053] Compared with the prior art, the present disclosure has at least the following advantages:

[0054] 1. The high-efficiency compact LED driver 10 described above, since the gallium nitride semiconductor has the characteristics of extremely low on-resistance, high breakdown voltage, small size and light weight, the first gallium nitride switch tube Q1, the second gallium nitride switch tube Q3 and the third gallium nitride switch tube Q2 can reduce energy loss in the switching process, thereby improving the energy conversion efficiency of the high-efficiency compact LED driver 10, reducing the size of the high-efficiency compact LED driver 10, and thereby facilitating the application of the high-efficiency compact LED driver 10 to the light and thin design of LED lamps, and improving the adaptability and practicality of the high-efficiency compact LED driver 10.

[0055] The above-described embodiments only express several embodiments of the present disclosure, and the description is more specific and detailed, but it cannot be understood as a limitation on the scope of the disclosed patent. It should be noted that for ordinary skilled persons in the art, without departing from the concept of the present disclosure, a number of modifications and improvements can be made, which are within the scope of the present disclosure. Therefore, the protection scope of the present disclosure patent should be subject to the appended claims.

Claims

1. A high-efficiency, compact LED driver, comprising a driver housing, a transmission wire, a circuit device, and heat-dissipating silicone. The driver housing comprises an upper cover housing and a base housing, the upper cover housing being disposed on the base housing. The driver housing is provided with an electronic device accommodating cavity, the circuit device being fixed within the electronic device accommodating cavity, the transmission wire being connected to the circuit device, and the heat-dissipating silicone being disposed within the electronic device accommodating cavity and covering the circuit device. The invention is characterized in that: The circuit device includes a gallium nitride component module and a driver circuit, and the gallium nitride component module is arranged in the circuit device; The driver circuit includes an anti-interference rectifier input circuit, an active power factor correction circuit, an isolation conversion circuit, a main control circuit and a rectifier filter output circuit. The output end of the anti-interference rectifier input circuit is connected to the input end of the active power factor correction circuit, the output end of the active power factor correction circuit is connected to the input end of the isolation conversion circuit, the output end of the isolation conversion circuit is connected to the input end of the rectifier filter output circuit, and the output end of the rectifier filter output circuit is used to output direct current to a load. The active power factor correction circuit includes a first gallium nitride switch tube and a first voltage-dividing resistor, wherein a first end of the first gallium nitride switch tube is connected to an input end of the active power factor correction circuit, a control end of the first gallium nitride switch tube is connected to a PFC control signal end of the main control circuit via the first voltage-dividing resistor, and a second end of the first gallium nitride switch tube is connected to a ground end; The isolation conversion circuit includes a second gallium nitride switching tube, a third gallium nitride switching tube, a second voltage-dividing resistor, and a third voltage-dividing resistor. The first end of the second gallium nitride switching tube is connected to the output end of the active power factor correction circuit, the control end of the second gallium nitride switching tube is connected to the boost control signal end of the main control circuit via the second voltage-dividing resistor, the second end of the second gallium nitride switching tube is connected to the output end of the isolation conversion circuit and the first end of the third gallium nitride switching tube, respectively, the control end of the third gallium nitride switching tube is connected to the buck control signal end of the main control circuit via the third voltage-dividing resistor, and the second end of the third gallium nitride switching tube is grounded. The gallium nitride component module includes the first gallium nitride switching tube, the second gallium nitride switching tube, and the third gallium nitride switching tube.

2. The high-efficiency compact LED driver according to claim 1, characterized in that The active power factor correction circuit also includes a first chip bead, a first end of the first chip bead is connected to the second end of the first voltage divider resistor, and a second end of the first chip bead is connected to the control end of the first gallium nitride switch tube.

3. The high-efficiency compact LED driver according to claim 2, characterized in that: The active power factor correction circuit further includes a first current limiting resistor, a first end of the first current limiting resistor is connected to the first voltage divider resistor, and a second end of the first current limiting resistor is connected to the control end of the first gallium nitride switch tube.

4. The high-efficiency compact LED driver according to claim 2, characterized in that The active power factor correction circuit also includes a first bias resistor, a first end of the first bias resistor is connected to the control end of the first gallium nitride switch tube, and a second end of the first bias resistor is connected to the second end of the first gallium nitride switch tube.

5. The high-efficiency compact LED driver according to claim 1, characterized in that: The isolation conversion circuit further includes a second bias resistor, a first end of the second bias resistor is connected to the control end of the second gallium nitride switch tube, and a second end of the second bias resistor is connected to the second end of the second gallium nitride switch tube.

6. The high-efficiency compact LED driver according to claim 5, characterized in that: The isolation conversion circuit further includes a second chip bead, a first end of the second chip bead is connected to the second end of the second voltage divider resistor, and a second end of the second chip bead is connected to the control end of the second gallium nitride switch tube.

7. The high-efficiency compact LED driver according to claim 1, characterized in that: The anti-interference rectifier input circuit includes an overvoltage protection circuit, an EMC filter circuit and a bridge rectifier filter circuit. The input end of the overvoltage protection circuit is used to be connected to an external AC power supply, the output end of the overvoltage protection circuit is connected to the input end of the EMC filter circuit, the output end of the EMC filter circuit is connected to the input end of the bridge rectifier filter circuit, and the output end of the bridge rectifier filter circuit is connected to the input end of the active power factor correction circuit.

8. The high-efficiency compact LED driver according to claim 1, characterized in that The rectification and filtering output circuit includes a synchronous rectification circuit, a secondary feedback circuit and an output filtering circuit. The input end of the synchronous rectification circuit is connected to the output end of the isolation conversion circuit, the output end of the synchronous rectification circuit is connected to the input end of the output filtering circuit, the output end of the synchronous rectification circuit is also connected to the input end of the secondary feedback circuit, the output end of the secondary feedback circuit is connected to the feedback detection end of the main control circuit, and the output end of the output filtering circuit is used to output a DC voltage to the load.

9. The high-efficiency compact LED driver according to claim 1, characterized in that: The base shell is provided with an inlet slot and an outlet slot, and the transmission wire includes a driver input line and a driver output line. The driver input line is passed through the inlet slot and connected to one end of the circuit device, and the driver output line is passed through the outlet slot and connected to the other end of the circuit device.

10. The high-efficiency compact LED driver according to claim 1, characterized in that: The outer periphery of the upper cover shell is provided with a plurality of clamping grooves, and the inner wall of the base shell is provided with a plurality of clamping members, each of the clamping members is clamped in one of the clamping grooves.

Images