High-voltage pulse generating device and testing system

Abstract

The utility model provides a high-voltage pulse generating device and a test system. The high-voltage pulse generating device comprises a main control unit, a driving circuit, a pulse control circuit with a wide bandgap semiconductor power device, and an output circuit, the first end of the main control unit is coupled with the first end of the driving circuit, the second end of the driving circuit is coupled with the first end of the pulse control circuit, and the second end of the pulse control circuit is coupled with the output circuit; the main control unit is configured to generate two paths of first PWM (Pulse Width Modulation) signals with dead time control; the two paths of first PWM signals are sent to the driving circuit; and the driving circuit is configured to process the first PWM signal and then drive the pulse control circuit, so that the output circuit generates a high-voltage pulse signal. According to the utility model, the structure is simple, the cost can be greatly reduced, the output pulse speed can be flexibly set, and the CMTI test requirements of different isolated gate drivers can be met.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor, especially a high voltage pulse generating device and test system. BACKGROUND

[0002] Common Mode Transient Immunity (CMTI) is an important performance indicator of an isolation circuit (such as a gate driver with isolation function). For example, please refer to Figure 1 and Figure 2 , wherein, Figure 1 is a topological structure diagram of an isolation circuit in the related art, Figure 2 is Figure 1 a waveform amplification diagram of the common mode voltage in. As shown in Figure 2 , CMTI is the maximum allowable rate (in kV / us or V / ns) of the rise or fall of the common mode voltage Vcm between the low voltage side (the left side shown in Figure 1 ) and the high voltage side (the right side shown in Figure 1 ) of the isolation circuit. In order to prevent the low voltage side circuit (i.e. the input circuit) from generating noise and prevent the isolation circuit from malfunctioning, it is required to withstand CMTI higher than the rated level, therefore, the test of CMTI is particularly important in the chip indicator test of such isolation circuits with isolation function.

[0003] The key to testing the CMTI parameter lies in how to generate a high-speed CMTI signal. With the popularity of new generation wide bandgap semiconductor devices (such as SiC and GaN), compared with traditional MOSFET (metal-oxide semiconductor FET) and IGBT (Insulate-Gate Bipolar Transistor), devices and applications require higher switching frequency, and higher transient voltage edge rate will occur during the on / off transient. For example, the CMTI of the current mainstream isolation gate driver (i.e. the gate driver with isolation function) can reach 150V / ns or even higher. The CMTI test system in the related art is generally composed of a high voltage pulse generator and a slope generator module, which is not only complex in design, but also expensive and in short supply.

[0004] It should be noted that the information disclosed in the background section of the utility model is only intended to deepen the understanding of the general background of the utility model, and should not be regarded as acknowledging or implying in any form that the information constitutes prior art known to those skilled in the art. CONTENT OF THE UTILITY MODEL

[0005] The utility model discloses a high pressure pulse generating device and test system, the utility model not only simple structure can reduce cost greatly, and can set up the output pulse speed flexibly, satisfy the CMTI test requirement of different isolated gate driver.

[0006] In order to realize above-mentioned purpose, the utility model discloses a high pressure pulse generating device, the high pressure pulse generating device includes: main control unit, drive circuit, the pulse control circuit with wide band gap semiconductor power device and output circuit, the first end of main control unit is coupled the first end of drive circuit, the second end of drive circuit is coupled the first end of pulse control circuit, the second end of pulse control circuit is coupled output circuit,

[0007] The main control unit is configured to generate two-way first PWM signals with dead time control, and send the two-way first PWM signals to the drive circuit.

[0008] The drive circuit is configured to drive the pulse control circuit after processing the first PWM signal, so that the output circuit generates a high-voltage pulse signal.

[0009] Optionally, the high-voltage pulse generating device is used to generate CMTI signals for testing a device under test, the second end of the main control unit is used to couple the input end of the device under test, and the main control unit is further configured to generate a second PWM signal for driving the device under test.

[0010] The output circuit is coupled between the input side ground terminal and the output side ground terminal of the device under test.

[0011] Optionally, the drive circuit includes an upper bridge drive sub-circuit and a lower bridge drive sub-circuit.

[0012] The first end of the upper bridge drive sub-circuit is coupled to the main control unit for receiving one of the first PWM signals, and the second end of the upper bridge drive sub-circuit is coupled to the first control end of the pulse control circuit. The first end of the lower bridge drive sub-circuit is coupled to the main control unit for receiving the other of the first PWM signals, and the second end of the lower bridge drive sub-circuit is coupled to the second control end of the pulse control circuit.

[0013] Optionally, the upper bridge drive sub-circuit and the lower bridge drive sub-circuit each include a drive chip with a drive current greater than or equal to 16A.

[0014] Optionally, the pulse control circuit comprises a first pulse control sub-circuit and a second pulse control sub-circuit, the first pulse control sub-circuit comprises a first wide-bandgap semiconductor power device, and the second pulse control sub-circuit comprises a second wide-bandgap semiconductor power device.

[0015] The control end of the first wide-bandgap semiconductor power device is coupled to the second end of the upper bridge driving sub-circuit, the control end of the second wide-bandgap semiconductor power device is coupled to the second end of the lower bridge driving sub-circuit, the first end of the first wide-bandgap semiconductor power device and the first end of the output circuit are coupled, the second end of the first wide-bandgap semiconductor power device, the first end of the second wide-bandgap semiconductor power device and the second end of the output circuit are coupled to a first reference ground, the second end of the second wide-bandgap semiconductor power device and the third end of the output circuit are coupled to a second reference ground, and the voltage of the first reference ground is higher than the voltage of the second reference ground.

[0016] Optionally, the output circuit comprises a first capacitor, a first resistor, a second capacitor and a second resistor connected in series, the first end of the series-connected sub-circuit is coupled to the first end of the first wide-bandgap semiconductor power device, the common connection point of the first resistor and the second capacitor is coupled to the first reference ground, and the second end of the series-connected sub-circuit is coupled to the second reference ground.

[0017] Optionally, the turn-on time of the wide-bandgap semiconductor power device is less than or equal to 10 ns, and the turn-off time of the wide-bandgap semiconductor power device is less than or equal to 20 ns.

[0018] And / or the wide-bandgap semiconductor power device comprises a GaN power device or a SiC power device.

[0019] Optionally, the high-voltage pulse generating device further comprises a PCB board, the main control unit, the driving circuit, the wide-bandgap semiconductor power device and the output circuit are arranged on the PCB board, and the wide-bandgap semiconductor power device is arranged close to the output side of the driving circuit.

[0020] Optionally, the PCB board is provided with a digital ground area, a first reference ground area and a second reference ground area, the main control unit is arranged in the digital ground area, the upper bridge driving sub-circuit of the driving circuit, the first pulse control sub-circuit of the pulse control circuit and the output circuit are arranged in the first reference ground area, and the lower bridge driving sub-circuit of the driving circuit and the second pulse control sub-circuit of the pulse control circuit are arranged in the second reference ground area.

[0021] In order to achieve the above object, the utility model provides a test system, the test system includes any one of the high pressure pulse generator device above.

[0022] Compared with the prior art, the high pressure pulse generator device and test system have the following beneficial effects:

[0023] The high pressure pulse generator device provided by the utility model includes a main control unit, a driving circuit, a pulse control circuit with a wide band gap semiconductor power device and an output circuit, the main control unit can generate a first PWM signal with a dead time control, so that the wide band gap semiconductor power device of the pulse control circuit can be prevented from being turned on or turned off at the same time, thereby avoiding damage of the wide band gap semiconductor power device caused by interference of the switching signal; further, the driving circuit can enhance the driving capacity of the first PWM signal, so that the pulse control circuit with the wide band gap semiconductor power device can be driven; still further, the pulse control circuit includes a wide band gap semiconductor power device, the wide band gap semiconductor power device has a high switching rate, and a high pressure pulse signal of 150V / ns or more can be easily generated, which lays a solid foundation for generating a CMTI signal of up to 150v / ns; still further, the output circuit of the utility model can flexibly configure an output capacitor, so that a high pressure pulse signal with different dv / dt can be generated, and the applicability of the utility model can be effectively improved. As can be seen from the above, the utility model can greatly reduce the cost, and the output pulse speed can be flexibly set, so that the CMTI test requirements of different isolation gate drivers can be met.

[0024] Since the test system provided by the utility model belongs to the same utility model concept as the high pressure pulse generator device provided by the utility model, the test system provided by the utility model at least has all the advantages of the high pressure pulse generator device provided by the utility model, and the detailed content of the beneficial effects of the test system provided by the utility model is described above in relation to the beneficial effects of the high pressure pulse generator device provided by the utility model, which will not be described one by one here. BRIEF DESCRIPTION OF DRAWINGS

[0025] Figure 1 It is a topological structure diagram of an isolation circuit in the related art;

[0026] Figure 2 It is Figure 1 It is a waveform amplification diagram of a common mode voltage;

[0027] Figure 3 It is a general structure schematic diagram of the high pressure pulse generator device provided by the utility model;

[0028] Figure 4The topological structure diagram of the driving circuit of the high-voltage pulse generating device provided by one of the embodiments of the utility model is shown in the figure.

[0029] Figure 5 The topological structure diagram of the pulse control circuit and the output circuit of the high-voltage pulse generating device provided by one of the embodiments of the utility model is shown in the figure.

[0030] Figure 6 The PCB layout diagram of the high-voltage pulse generating device provided by one of the embodiments of the utility model is shown in the figure.

[0031] Among them, the reference signs are as follows:

[0032] The main control unit is 100.

[0033] The driving circuit is 200, the upper bridge driving sub-circuit is 210, the lower bridge driving sub-circuit is 220, the first driving chip is 211, the second driving chip is 221, the first peripheral sub-circuit is 212, 222, and the second peripheral sub-circuit is 213, 223.

[0034] The pulse control circuit is 300, the first pulse control sub-circuit is 310, the first wide-bandgap semiconductor power device is Q1, the second pulse control sub-circuit is 320, and the second wide-bandgap semiconductor power device is Q2.

[0035] The output circuit is 400, the first capacitor is C1, the first resistor is R1, the second capacitor is C2, and the second resistor is R2.

[0036] The device to be measured is 500.

[0037] The PCB board is 600, the digital ground area is 610, the first reference ground area is 620, the second reference ground area is 630, and the device to be measured area is 640.

[0038] The high-voltage pulse signal is HV. Specific implementation

[0039] The high-voltage pulse generating device and the test system are further described in detail below with reference to the drawings. The advantages and features of the present application will be more apparent according to the following description. It should be noted that the drawings are very simplified and all use non-precise proportions, only for the purpose of facilitating and clearly assisting the description of the embodiments of the present application. In order to make the purpose, features and advantages of the present application more apparent and easy to understand, please refer to the drawings. It should be noted that the structure, proportion, size and the like shown in the drawings of the present application are only used to cooperate with the content disclosed in the specification, so that those skilled in the art can understand and read, and are not used to limit the conditions of the implementation of the present application. Any modification of structure, change of proportion relationship or adjustment of size, as long as it is the same or similar to the effect and purpose that can be achieved by the present application, should still fall within the scope of the technical content disclosed by the present application. The specific design features of the present application disclosed in this paper include, for example, specific dimensions, directions, positions and shapes, which will be determined partly by the specific application and use environment. In addition, in the following description of the embodiments, sometimes the same reference signs are used between different drawings to represent the same parts or parts with the same function, and the repeated description is omitted. In this specification, similar signs and letters are used to represent similar items, so once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings. In addition, if the method described herein includes a series of steps, and the order of the steps presented herein is not necessarily the only order in which the steps can be performed, and some of the described steps can be omitted and / or some other steps not described herein can be added to the method.

[0040] It should be noted that the relational terms herein, such as first and second, and the like, are used solely to distinguish one from another entity or action without necessarily requiring or implying any actual relationship or order between such entities or actions. Moreover, the terms "comprises", "comprising", or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but can also include other elements not expressly listed or inherent to such process, method, article, or apparatus. An element proceeded by "comprises... a" does not, without more constraints, exclude the existence of additional identical elements in the process, method, article, or apparatus that comprises the element. The singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise. The term "or" is generally employed in its sense including "and / or" unless the context clearly dictates otherwise. The term "and / or" means "and" or "or". The term "at least two" means "two or more" unless the context clearly dictates otherwise. The terms "first", "second", "third", etc. are used only to describe a purpose and cannot be understood as indicating or implying relative importance or implying the number of the indicated technical features.

[0041] In addition, unless specifically stated or otherwise evident from context, "about" as used herein is understood as within a range of normal tolerance in the art, for example within 2 standard deviations of the mean. About can be understood to be within 10%, 9%, 8%, 7%, 6%, 5%, 4%, 3%, 2%, 1%, 0.5%, 0.1%, 0.05% or 0.01% of the indicated value. Unless specifically stated, or otherwise evident from context, all numerical values provided herein are modified by the term "about".

[0042] It should be understood that when an element is referred to as being "connected", "attached", "coupled" or "linked" to another element, it can be directly connected, attached, coupled or linked to the other element, or intervening elements can be present. In contrast, when an element is referred to as being "directly connected", "directly attached", "directly coupled" or "directly linked" to another element, there are no intervening elements present.

[0043] The core idea of the utility model lies in providing a high voltage pulse generating device and test system, the utility model not only simple structure, can greatly reduce cost, and can set output pulse speed flexibly, satisfy different isolation gate driver CMTI test requirement.

[0044] In order to realize the above idea, one embodiment of the utility model provides a high voltage pulse generating device.Exemplarily, please see Figure 3 , Figure 3 The utility model provides a high voltage pulse generating device's overall structure schematic diagram.From Figure 3It can be seen that the high-voltage pulse generating device provided by the embodiment comprises a main control unit 100, a driving circuit 200, a pulse control circuit 300 with a wide bandgap semiconductor power device, and an output circuit 400; a first end of the main control unit 100 is coupled to a first end of the driving circuit 200, a second end of the driving circuit 200 is coupled to a first end of the pulse control circuit 300, and a second end of the pulse control circuit 300 is coupled to the output circuit 400; the main control unit 100 is configured to generate two-way first PWM (Pulse Width Modulation) signals with dead time control, and send the two-way first PWM signals to the driving circuit 200; the driving circuit 200 is configured to drive the pulse control circuit 300 after processing the first PWM signals, so that the output circuit 400 generates a high-voltage pulse signal HV.

[0045] Therefore, the high-voltage pulse generating device provided by the utility model comprises a main control unit 100, a driving circuit 200, a pulse control circuit 300 with a wide bandgap semiconductor power device, and an output circuit 400, the main control unit 100 can generate a first PWM signal with dead time control, thereby preventing the wide bandgap semiconductor power device of the pulse control circuit 300 from being simultaneously turned on or turned off, so as to avoid damage to the wide bandgap semiconductor power device caused by interference of the switching signal; further, the driving circuit 200 can enhance the driving capability of the first PWM signal, so as to ensure that the pulse control circuit 300 with a wide bandgap semiconductor power device can be driven; further, the pulse control circuit 300 comprises a wide bandgap semiconductor power device, the wide bandgap semiconductor power device has a high switching rate, and can easily generate a high-voltage pulse signal of 150V / ns or more, thereby laying a solid foundation for generating a CMTI signal of up to 150v / ns; further, the output circuit 400 of the utility model can flexibly configure an output capacitor, so as to generate a high-voltage pulse signal HV with different dv / dt, and can effectively improve the applicability of the utility model. As can be seen from the above, the utility model can greatly reduce the cost, and can flexibly set the output pulse speed, so as to meet the CMTI test requirements of different isolation gate drivers.

[0046] It should be understood that the specific implementation of the main control unit 100 is not limited. The main control unit 100 can be a microcontroller unit (Microcontroller Unit), and can also be a general-purpose processor, a digital signal processor (Digital Signal Processor, DSP), an application-specific integrated circuit (Application Specific Integrated Circuit, ASIC), a field-programmable gate array (Field-Programmable Gate Array, FPGA), or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components, etc. The general-purpose processor can be a microprocessor or any conventional processor.

[0047] Preferably, in some exemplary embodiments, the wide-bandgap semiconductor power device (specifically Figure 5 The opening time of the first wide-bandgap semiconductor power device Q1 and the second wide-bandgap semiconductor power device Q2 in the wide-bandgap semiconductor power device is less than or equal to 10ns, and the turn-off time of the wide-bandgap semiconductor power device is less than or equal to 20ns. Preferably, the opening time of the wide-bandgap semiconductor power device is 9ns, and the turn-off is 18ns. Thus, the wide-bandgap semiconductor power device with high switching rate can easily generate a high-voltage pulse signal HV of 150V / ns or more, and lays a solid foundation for generating a CMTI signal of up to 150v / ns. It should be noted that, as can be understood by those skilled in the art, the opening time of the wide-bandgap semiconductor power device is less than or equal to 10ns, and the turn-off time of the wide-bandgap semiconductor power device is less than or equal to 20ns, which is only a demonstration of the preferred embodiment. The opening time and turn-off time of the wide-bandgap semiconductor power device are not limited.

[0048] Preferably, in some exemplary embodiments, the wide-bandgap semiconductor power device includes a GaN power device or a SiC power device. It should be noted that the design of the wide-bandgap semiconductor power device using GaN power device or SiC power device is only a demonstration of the preferred embodiment, and is not a limitation of the present application. The specific material of the wide-bandgap semiconductor power device is not limited, and the wide-bandgap semiconductor power device should be reasonably selected according to actual needs in the specific implementation of the present application. For more detailed content of the wide-bandgap semiconductor power device, please refer to the related technology known to those skilled in the art. Due to the limited space, this paper does not expand the description.

[0049] Please continue to see Figure 3 From Figure 3As can be seen, in some exemplary embodiments, the high-voltage pulse generator is used to generate a CMTI signal for testing the device under test 500 (e.g., a gate driver with isolation function), the second terminal of the main control unit 100 is used to couple to the input terminal of the device under test 500, and the main control unit 100 is also configured to generate a second PWM signal to drive the device under test 500. For example, please refer to... Figure 1 The output circuit 400 is coupled to the input side of the device under test 500. Figure 1 The input circuit ground terminal (GNDI) and the output ground terminal (shown on the left) are shown on the left. Figure 1 The output circuit shown on the right is connected to the ground terminal (GNDO).

[0050] Therefore, by generating a second PWM signal to drive the device under test 500 through the main control unit 100, the integration of the high voltage pulse generator can be significantly improved. Using the high voltage pulse generator provided by this utility model to perform CMTI testing on a gate driver with isolation function can effectively improve the testing efficiency.

[0051] It should be noted that, as those skilled in the art will understand, this invention does not limit the specific application scenarios of the high-voltage pulse generator. The CMTI test for a gate driver with isolation function described above is merely an illustrative example of a preferred embodiment and not a limitation of this invention. For example, the high-voltage pulse generator provided by this invention can also be used in medical devices or communication systems or other test systems that require high-voltage pulse signals, including but not limited to those requiring such signals.

[0052] Please see Figure 3 and Figure 4 , Figure 4 This is a schematic diagram of the topology of the drive circuit for a high-voltage pulse generator provided in one embodiment of the present invention. Figure 3 and Figure 4 As can be seen, in some exemplary embodiments, the driving circuit 200 includes an upper bridge driving sub-circuit 210 and a lower bridge driving sub-circuit 220. The first terminal of the upper bridge driving sub-circuit 210 is coupled to the main control unit 100 and is used to receive one of the first PWM signals. The second terminal of the upper bridge driving sub-circuit 210 is coupled to the first control terminal of the pulse control circuit 300. The first terminal of the lower bridge driving sub-circuit 220 is coupled to the main control unit 100 and is used to receive another of the first PWM signals. The second terminal of the lower bridge driving sub-circuit 220 is coupled to the second control terminal of the pulse control circuit 300.

[0053] Therefore, the driving circuit 200 of the high-voltage pulse generating device provided by the utility model comprises an upper bridge driving sub-circuit 210 and a lower bridge driving sub-circuit 220, the single-bridge driving circuit design can not only improve the driving capacity and reduce the switching loss, thereby providing sufficient current and voltage for the pulse control circuit 300, but also can simplify the circuit design and reduce the space occupation of the circuit, thereby simplifying the design of the peripheral circuit and saving the cost.

[0054] Preferably, each of the first PWM signals is a differential signal. In this way, the stability and reliability of the high-voltage pulse generating device provided by the utility model can be further improved by fully utilizing the characteristics of the differential signal that has strong anti-interference ability.

[0055] Preferably, in some exemplary embodiments, the upper bridge driving sub-circuit 210 and the lower bridge driving sub-circuit 220 each comprise a driving chip with a driving current greater than or equal to 16A. Therefore, the upper bridge driving sub-circuit 210 and the lower bridge driving sub-circuit 220 each adopt a driving chip with a driving current greater than or equal to 16A, which can not only improve the driving capacity of driving the pulse control circuit 300, but also further simplify the complexity of the circuit design provided by the utility model, thereby significantly saving the cost of material and labor.

[0056] For example, the upper bridge driving sub-circuit 210, please continue to refer to Figure 4 For example, the upper bridge driving sub-circuit 210, please continue to refer to Figure 4As shown, the upper bridge driving sub-circuit 210 comprises a first driving chip 211, a first peripheral sub-circuit 212 and a second peripheral sub-circuit 213, wherein the first peripheral sub-circuit 212 is used to improve the stability of the first PWM signal input into the first driving chip 211 and to stably supply power for the logic circuit of the first driving chip 211, and the second peripheral sub-circuit 213 stably supplies power for the logic circuit of the first driving chip 211. The topology of the lower bridge driving sub-circuit 220 can be understood by referring to the relevant description of the upper bridge driving sub-circuit 210, and will not be described herein. It should be noted that those skilled in the art should understand that the specific implementation of the first peripheral sub-circuit 212 and the second peripheral sub-circuit 213 of the first driving chip 211 and the second driving chip 221 is not limited, for example, a capacitor and / or a resistor in series and / or parallel can be used. Further, the manufacturer and chip type of the first driving chip 211 and the second driving chip 221 are not limited, and should be reasonably selected according to actual needs when implementing the utility model. Preferably, the first driving chip 211 of the upper bridge driving sub-circuit 210 and the second driving chip 221 of the lower bridge driving sub-circuit 220 are preferably driving chips of the same manufacturer and the same model, so as to further improve the stability, reliability and precision of the high-voltage pulse signal HV output by the high-voltage pulse generating device provided by the utility model.

[0057] Please refer to Figure 5 , Figure 5 The topology structure schematic diagram of the pulse control circuit 300 and the output circuit 400 of the high-voltage pulse generating device provided by one of the embodiments of the utility model is shown. From Figure 5 it can be seen that in some exemplary embodiments, the pulse control circuit 300 comprises a first pulse control sub-circuit 310 and a second pulse control sub-circuit 320, the first pulse control sub-circuit 310 comprises a first wide-bandgap semiconductor power device Q1, and the second pulse control sub-circuit 320 comprises a second wide-bandgap semiconductor power device Q2; the control end of the first wide-bandgap semiconductor power device Q1 is coupled to the second end of the upper bridge driving sub-circuit 210, the control end of the second wide-bandgap semiconductor power device Q2 is coupled to the second end of the lower bridge driving sub-circuit 220, and the first end of the first wide-bandgap semiconductor power device Q1 and the first end of the output circuit 400 are coupled; the second end of the first wide-bandgap semiconductor power device Q1, the first end of the second wide-bandgap semiconductor power device Q2 and the second end of the output circuit 400 are coupled to a first reference ground (GND HIGH is shown in the figure), and the second end of the second wide-bandgap semiconductor power device Q2 and the third end of the output circuit 400 are coupled to a second reference ground (GND LOW is shown in the figure). Figure 5 ​Figure 5 The voltage of the first reference ground is higher than the voltage of the second reference ground.

[0058] Therefore, the pulse control circuit 300 comprises a first pulse control sub-circuit 310 and a second pulse control sub-circuit 320, the first pulse control sub-circuit 310 comprises a first wide-bandgap semiconductor power device Q1, and the second pulse control sub-circuit 320 comprises a second wide-bandgap semiconductor power device Q2, by taking advantage of the high switching rate of the wide-bandgap semiconductor power device, the high-voltage pulse generating device provided by the utility model can easily generate a high-voltage pulse signal of 150V / ns or above, and lays a solid foundation for generating a CMTI signal of up to 150v / ns.

[0059] It should be understood that, as described above, the manufacturer and chip type of the first wide-bandgap semiconductor power device Q1 and the second wide-bandgap semiconductor power device Q2 are not limited too much, and in the implementation of the utility model, reasonable selection should be made according to actual needs. Preferably, the first wide-bandgap semiconductor power device Q1 of the first pulse control sub-circuit 310 and the second wide-bandgap semiconductor power device Q2 of the second pulse control sub-circuit 320 are preferably wide-bandgap semiconductor power devices of the same manufacturer and the same model, so as to further improve the stability, reliability and output precision of the high-voltage pulse generating device provided by the utility model.

[0060] Preferably, please continue to refer to Figure 5 In some of the exemplary embodiments, taking the first pulse control sub-circuit 310 as an example, in addition to the first wide-bandgap semiconductor power device Q1, the first pulse control sub-circuit 310 can also comprise resistors R01 and R02 for filtering the differential signals HIGH_GATE_H and HIGH_GATE_L of the first PWM signal, and a capacitor C01 for current limiting and protecting the first wide-bandgap semiconductor power device Q1.

[0061] Please continue to refer to Figure 5 From Figure 5 It can be seen that, in some of the exemplary embodiments, the output circuit 400 comprises a first capacitor C1, a first resistor R1, a second capacitor C2 and a second resistor R2 connected in series; the first end of the sub-circuit formed by the series connection is coupled to the first end of the first wide-bandgap semiconductor power device Q1, the common connection point of the first resistor R1 and the second capacitor C2 is coupled to the first reference ground, and the second end of the sub-circuit formed by the series connection is coupled to the second reference ground.

[0062] Therefore, the output circuit 400 adopts the design mode of connecting the first capacitor C1, the first resistor R1, the second capacitor C2 and the second resistor R2 in series, can not only flexibly set the output pulse speed, meet the CMTI test requirements of different isolation gate drivers, but also has simple structure, is easy to implement and can greatly reduce the cost.

[0063] Please refer to Figure 6 , Figure 6 The PCB layout schematic diagram of the high-voltage pulse generating device provided by one of the embodiments of the utility model is shown in FIG. 6. As can be seen from Figure 6 in some exemplary embodiments, the high-voltage pulse generating device provided by the utility model further comprises a PCB board 600, the main control unit 100, the drive circuit 200, the pulse control circuit 300 with a wide band gap semiconductor power device and the output circuit 400 are all arranged on the PCB board 600, and the wide band gap semiconductor power device is arranged close to the output side of the drive circuit 200.

[0064] Therefore, the high-voltage pulse generating device provided by the utility model can minimize the parasitic inductance by arranging the wide band gap semiconductor power device close to the output side of the drive circuit 200, reduce the output pulse ringing, and further improve the stability and reliability of the high-voltage pulse signal output by the high-voltage pulse generating device provided by the utility model.

[0065] Please continue to refer to Figure 6 in some exemplary embodiments, the PCB board 600 is provided with a digital ground area 610, a first reference ground (GND HIGH, high-voltage ground) area and a second reference ground (GND LOW, low-voltage ground) area, the main control unit 100 is arranged on the digital ground (GND CON) area, the upper bridge drive sub-circuit 210 of the drive circuit 200, the first pulse control sub-circuit 310 of the pulse control circuit 300 and the output circuit 400 are arranged on the first reference ground area 620, and the lower bridge drive sub-circuit 220 of the drive circuit 200 and the second pulse control sub-circuit 320 of the pulse control circuit 300 are arranged on the second reference ground area 630. Therefore, the high-voltage side and the low-voltage side can be better isolated, and the safety of the test system is further improved.

[0066] Please continue to refer to Figure 6In some of the exemplary embodiments, the high-voltage pulse generating device is used to provide a test CMTI signal for an isolation circuit, a device-under-test region 640 is arranged between the first reference ground region 620 and the second reference ground region 630, so that a high-voltage side of the isolation circuit is close to the first reference ground region 620, and a low-voltage side of the isolation circuit is close to the second reference ground region 630. Further, the device-under-test region 640 is away from the digital ground region 610, so as to further improve the stability, reliability and service life of the high-voltage pulse generating device provided by the utility model.

[0067] A further embodiment of the utility model provides a test system, the test system includes the high-voltage pulse generating device of any one of the above embodiments.

[0068] Since the test system provided by the embodiment includes the high-voltage pulse generating device of any one of the above embodiments, it can be seen that the test system provided by the embodiment and the high-voltage pulse generating device provided by the utility model belong to the same utility model concept, therefore, the test system provided by the utility model has at least all the advantages of the high-voltage pulse generating device provided by the utility model, and the detailed content of the beneficial effects of the test system provided by the utility model is described above in relation to the beneficial effects of the high-voltage pulse generating device provided by the utility model, and will not be described one by one here.

[0069] It should be understood that, in addition to the high-voltage pulse generating device, the test system can also include a power supply for supplying power to the high-voltage pulse generating device, an input and output device for human-computer interaction and a memory for storing test results and other components, which can be adaptively set according to the specific type of device-under-test, and will not be described in detail herein. It can be understood that the utility model does not limit the specific application scenarios of the test system, preferably, the test system can be used to test the CMTI performance of an isolation circuit.

[0070] Compared with the prior art, the high-voltage pulse generating device and the test system provided by the utility model have the following beneficial effects:

[0071] The high-voltage pulse generating device provided by the utility model includes a main control unit, a driving circuit, a pulse control circuit with a wide band gap semiconductor power device and an output circuit, the main control unit can generate a first PWM signal with dead time control, so that the wide band gap semiconductor power device of the pulse control circuit can be prevented from being turned on or turned off at the same time, thereby avoiding damage of the wide band gap semiconductor power device caused by interference of a switching signal; further, the driving circuit can enhance the driving capability of the first PWM signal, so that the pulse control circuit with the wide band gap semiconductor power device can be driven; still further, the pulse control circuit includes the wide band gap semiconductor power device, the wide band gap semiconductor power device has a high switching rate, and a high-voltage pulse signal of 150V / ns or above can be easily generated, thereby laying a solid foundation for generating a CMTI signal of up to 150v / ns; still further, the output circuit of the utility model can flexibly configure an output capacitor, so that a high-voltage pulse signal with different dv / dt can be generated, and the applicability of the utility model can be effectively improved. In summary, the utility model can greatly reduce the cost, flexibly set the output pulse speed and meet the CMTI test requirements of different isolation gate drivers.

[0072] It should be noted that the apparatus and methods disclosed in the embodiments herein can also be implemented in other ways. The apparatus embodiments described above are merely illustrative. For example, the flowcharts and block diagrams in the drawings show possible implementation architectures, functions and operations of the apparatus, method and computer program product according to the embodiments herein. In this regard, each block in the flowcharts or block diagrams can represent a module, a program segment or a part of code that contains one or more executable instructions for implementing the specified logic function. It should also be noted that in some alternative implementations, the functions noted in the blocks can occur in different orders than those described in the drawings. For example, two consecutive blocks can actually be executed substantially in parallel, and they can also be executed in reverse order, depending on the functions involved. It should also be noted that each block in the block diagrams and / or flowcharts, and the combination of blocks in the block diagrams and / or flowcharts, can be implemented by a dedicated hardware-based system for performing the specified functions or actions, or can be implemented by a combination of dedicated hardware and computer instructions.

[0073] In addition, each functional module in the embodiments herein can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.

[0074] The above description is only a description of the preferred embodiment of the high-voltage pulse generating device and test system provided by the utility model, and does not limit the scope of the utility model in any way, and any change or modification made by the ordinary skilled in the art according to the above disclosure belongs to the protection scope of the utility model. Obviously, those skilled in the art can make various modifications and changes to the utility model without departing from the spirit and scope of the utility model. Thus, if these modifications and changes belong to the scope of the utility model and its equivalent technology, the utility model also intends to include these modifications and changes.

Claims

1. A high-voltage pulse generator, characterized in that, include: The main control unit, drive circuit, pulse control circuit with wide bandgap semiconductor power devices, and output circuit; The first terminal of the main control unit is coupled to the first terminal of the drive circuit, the second terminal of the drive circuit is coupled to the first terminal of the pulse control circuit, and the second terminal of the pulse control circuit is coupled to the output circuit. The main control unit is configured to generate two first PWM signals with dead-time control and send the two first PWM signals to the drive circuit. The driving circuit is configured to process the first PWM signal and then drive the pulse control circuit so that the output circuit generates a high-voltage pulse signal.

2. The high-voltage pulse generator according to claim 1, characterized in that, The high-voltage pulse generator is used to generate a CMTI signal for testing the device under test. The second terminal of the main control unit is used to couple to the input terminal of the device under test. The main control unit is also configured to generate a second PWM signal to drive the device under test. The output circuit is coupled between the input-side ground terminal and the output-side ground terminal of the device under test.

3. The high-voltage pulse generator according to claim 1, characterized in that, The driving circuit includes an upper bridge driving sub-circuit and a lower bridge driving sub-circuit; The first terminal of the upper bridge drive sub-circuit is coupled to the main control unit and is used to receive one of the first PWM signals. The second terminal of the upper bridge drive sub-circuit is coupled to the first control terminal of the pulse control circuit. The first terminal of the lower bridge drive sub-circuit is coupled to the main control unit and is used to receive another of the first PWM signals. The second terminal of the lower bridge drive sub-circuit is coupled to the second control terminal of the pulse control circuit.

4. The high-voltage pulse generator according to claim 3, characterized in that, Both the upper bridge driver sub-circuit and the lower bridge driver sub-circuit include a driver chip with a drive current greater than or equal to 16A.

5. The high-voltage pulse generator according to claim 3, characterized in that, The pulse control circuit includes a first pulse control sub-circuit and a second pulse control sub-circuit. The first pulse control sub-circuit includes a first wide bandgap semiconductor power device, and the second pulse control sub-circuit includes a second wide bandgap semiconductor power device. The control terminal of the first wide-bandgap semiconductor power device is coupled to the second terminal of the upper bridge driver sub-circuit, the control terminal of the second wide-bandgap semiconductor power device is coupled to the second terminal of the lower bridge driver sub-circuit, the first terminal of the first wide-bandgap semiconductor power device and the first terminal of the output circuit are coupled together; the second terminal of the first wide-bandgap semiconductor power device, the first terminal of the second wide-bandgap semiconductor power device and the second terminal of the output circuit are coupled to a first reference ground, the second terminal of the second wide-bandgap semiconductor power device and the third terminal of the output circuit are coupled to a second reference ground; the voltage of the first reference ground is higher than the voltage of the second reference ground.

6. The high-voltage pulse generator according to claim 5, characterized in that, The output circuit includes a first capacitor, a first resistor, a second capacitor, and a second resistor connected in series. The first end of the sub-circuit formed by the series connection is coupled to the first end of the first wide bandgap semiconductor power device. The common junction of the first resistor and the second capacitor is coupled to the first reference ground. The second end of the sub-circuit formed by the series connection is coupled to the second reference ground.

7. The high-voltage pulse generator according to claim 1, characterized in that, The wide bandgap semiconductor power device has an on-time of less than or equal to 10 ns and an off-time of less than or equal to 20 ns. And / or the wide bandgap semiconductor power devices include GaN power devices or SiC power devices.

8. The high-voltage pulse generator according to claim 1, characterized in that, It also includes a PCB board, on which the main control unit, the driving circuit, the wide bandgap semiconductor power device and the output circuit are all disposed, and the wide bandgap semiconductor power device is disposed close to the output side of the driving circuit.

9. The high-voltage pulse generator according to claim 8, characterized in that, The PCB board is provided with a digital ground area, a first reference ground area and a second reference ground area. The main control unit is located in the digital ground area. The upper bridge drive sub-circuit of the drive circuit, the first pulse control sub-circuit of the pulse control circuit and the output circuit are located in the first reference ground area. The lower bridge drive sub-circuit of the drive circuit and the second pulse control sub-circuit of the pulse control circuit are located in the second reference ground area.

10. A testing system, characterized in that, The testing system includes a high-voltage pulse generator as described in any one of claims 1 to 9.

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