HBC battery, battery assembly and photovoltaic system

Abstract

The utility model is applicable to the field of photovoltaic technology, and provides an HBC battery, a battery assembly and a photovoltaic system, the HBC battery comprises a silicon substrate, a first area and a second area are arranged on the backlight surface of the silicon substrate, and the first area and the second area are alternately arranged; a first polar polycrystalline silicon layer is arranged in the first region, a second polar amorphous silicon layer is arranged in the second region, the first region and the second region are both covered with TCO film layers, isolation grooves are formed in the positions, adjacent to the first region and the second region, of the TCO film, and the isolation grooves penetrate through the TCO film layers; at least a first TCO residue group and a second TCO residue group are adjacently arranged in the isolation groove, the first TCO residue group comprises a plurality of first TCO residue square rings which are adjacently arranged along the extension direction of the isolation groove, and the second TCO residue group comprises a plurality of second TCO residue square rings which are adjacently arranged along the extension direction of the isolation groove; the adjacent vertex angles of the first TCO residual square ring and the second TCO residual square ring are staggered.

Description

TECHNICAL FIELD

[0001] The utility model belongs to photovoltaic technical field especially relates to a kind of HBC battery, battery assembly and photovoltaic system. BACKGROUND

[0002] The existing HBC (heterojunction back contact) solar cell isolation groove usually uses two or more than two alignment overlapping laser to isolate. The original intention of this design is to ensure the reliability and thoroughness of the isolation groove, so as to prevent the pn junction of the front and back of the cell from short circuiting in some areas. However, this overlapping laser isolation method has the following disadvantages:

[0003] When two or more lasers are aligned and overlapped, the laser energy density of the overlapping area will increase significantly, as shown in Figure 1 , resulting in thermal damage and structural damage to the cell material, reducing the mechanical properties of the cell, increasing the defect density of the material, and affecting the electrical performance of the cell. Laser damage can also increase the recombination centers on the surface of the cell, resulting in an increase in the dark saturation current density (J02). Due to laser damage and the conductive path in the overlapping area, the current-voltage characteristics of the cell will be affected, resulting in a decrease in the fill factor (FF). In the case of instability, the laser can also leave transparent conductive oxide (TCO) at a fixed position. These residual TCOs are aligned and connected to each other, which can form a conductive path to connect the pn junction, resulting in short circuiting. Short circuiting can severely reduce the performance of the cell, or even make it completely ineffective. SUMMARY

[0004] The utility model provides a kind of HBC battery, battery assembly and photovoltaic system, to solve the problem of short circuit caused by residual alignment connection of TCO film layer.

[0005] The utility model is realized as follows: a kind of HBC battery, comprising:

[0006] A silicon substrate having a back light surface and a light surface arranged opposite to each other, a first region and a second region are arranged on the back light surface of the silicon substrate, and the first region and the second region are arranged alternately.

[0007] A first polarity polysilicon layer is arranged in the first region, a second polarity amorphous silicon layer is arranged in the second region, and a TCO film layer is covered on the first region and the second region. An isolation groove is arranged on the TCO film at the adjacent position of the first region and the second region, and the isolation groove penetrates the TCO film layer.

[0008] The first TCO residue group and the second TCO residue group are arranged adjacent to each other in the isolation groove, the first TCO residue group comprises a plurality of first TCO residue square rings arranged adjacent to each other along the extension direction of the isolation groove, and the second TCO residue group comprises a plurality of second TCO residue square rings arranged adjacent to each other along the extension direction of the isolation groove.

[0009] Optionally, the isolation groove is arranged in the first region close to the second region.

[0010] Optionally, the length of the adjacent side of the first TCO residue square ring and the second TCO residue square ring is the same.

[0011] Optionally, the length of the adjacent side of the first TCO residue square ring and the second TCO residue square ring is L, the distance between the adjacent top corners of the first TCO residue square ring and the second TCO residue square ring is d, and 0.05L≤d≤0.5L.

[0012] Optionally, the length of the side perpendicular to the extension direction of the isolation groove in the first TCO residue square ring is D1, and the length of the side perpendicular to the extension direction of the isolation groove in the second TCO residue square ring is D2, and D1

[0013] Optionally, 0.05D2≤D1≤0.5D2.

[0014] Optionally, the area of the first TCO residue group is smaller than the area of the second TCO residue group.

[0015] Optionally, the area of the first TCO residue group is 50% to 95% of the area of the second TCO residue group.

[0016] The utility model also provides a battery assembly, including above -mentioned HBC battery.

[0017] The utility model also provides a photovoltaic system, including above -mentioned battery assembly.

[0018] The utility model reaches the beneficial effect, because the isolation groove is arranged on the TCO film layer, the first TCO residue square ring and the second TCO residue square ring are arranged in the isolation groove, the top corner of the first TCO residue square ring and the second TCO residue square ring is staggered, even if the part connection is formed in the manufacturing process, the complete conduction path is not easy to form in the pn junction area, thereby greatly reduce the risk of battery short circuit. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 It is the top view structural schematic diagram of the isolation groove provided by prior art;

[0020] Figure 2 is a top view structural schematic diagram of the isolation groove provided by the utility model;

[0021] Figure 3 is another top view structural schematic diagram of the isolation groove provided by the utility model;

[0022] Figure 4 is a structural schematic diagram of the HBC battery provided by the utility model;

[0023] Figure 5 is a scanning electron microscope amplification structural schematic diagram of the isolation groove provided by the utility model.

[0024] Explanation of reference signs:

[0025] 100, solar cell; 110, first region; 111, tunneling oxide layer; 112, first polarity polysilicon layer; 113, phosphor-silicon glass layer; 120, second region; 121, first passivation layer; 122, second polarity amorphous silicon layer; 130, TCO film layer; 131, isolation groove; 132, first TCO residue group; 1321, first TCO residue square ring; 133, second TCO residue group; 1331, second TCO residue square ring; 140, second passivation layer; 150, anti-reflection layer. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical scheme and advantages of the utility model more clear and intelligible, the following combines the drawings and examples, and further specifically describes the utility model. The examples of the examples are shown in the drawings, wherein the same or similar reference signs represent the same or similar elements or elements with the same or similar functions throughout. The examples described below by referring to the drawings are exemplary and are only used to explain the utility model, and cannot be understood as limiting the utility model. In addition, it should be understood that the specific examples described herein are only used to explain the utility model, and cannot be used to limit the utility model.

[0027] In the description of the utility model, it should be understood that the terms "length", "width", "upper", "lower", "left", "right", "horizontal", "top", "bottom" and the like indicate the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the utility model and simplify the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the utility model.

[0028] In addition, the terms "first", "second", "third", etc. are used only for descriptive purposes and are not to be construed as indicating or implying relative importance or an ordered ranking of the indicated technical features. Thus, features defined with "first", "second" or "third" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly specified and limited.

[0029] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected, it can be mechanical connection, or electrical connection or can communicate with each other, it can be directly connected, or indirectly connected through intermediate medium, or the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0030] In the present application, unless otherwise explicitly specified and limited, the "upper" or "lower" of the first feature to the second feature can include the direct contact of the first and second features, or can include the contact of the first and second features through another feature between them. Moreover, the "upper", "upper" and "upper" of the first feature to the second feature include the vertical direction of the first feature above and oblique above the second feature, or only indicate that the horizontal height of the first feature is higher than that of the second feature. The "lower", "lower" and "lower" of the first feature to the second feature include the vertical direction of the first feature below and oblique below the second feature, or only indicate that the horizontal height of the first feature is less than that of the second feature.

[0031] The following disclosure provides many different embodiments or examples for implementing different structures of the present application. In order to simplify the disclosure of the present application, the components and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeatedly refer to numbers and / or letters in different examples, and such repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present application provides examples of various specific processes and materials, but those skilled in the art can realize the application of other processes and / or the use of other materials.

[0032] The present application sets up an isolation groove on the TCO film layer, the first TCO residual square ring and the second TCO residual square ring are arranged in the isolation groove, the top angle of the first TCO residual square ring and the second TCO residual square ring is staggered, even if part of the connection is formed in the manufacturing process, it is not easy to form a complete conductive path in the pn junction area, thereby greatly reducing the risk of battery short circuit.

[0033] Example One

[0034] Referring to FIGS. 2 to Figure 5 The embodiment provides an HBC battery, comprising:

[0035] The silicon substrate has a back light surface and a light facing surface arranged oppositely, and the first region 110 and the second region 120 are arranged on the back light surface of the silicon substrate, and the first region 110 and the second region 120 are arranged alternately.

[0036] The first polar polysilicon layer 112 is arranged in the first region 110, and the second polar amorphous silicon layer 122 is arranged in the second region 120, and the TCO film layer 130 is arranged on the first region 110 and the second region 120, and the isolation groove 131 is arranged on the TCO film of the first region 110 and the second region 120, and the isolation groove 131 penetrates the TCO film layer 130.

[0037] The first TCO residue group 132 and the second TCO residue group 133 are arranged adjacent to each other in the isolation groove 131, the first TCO residue group 132 comprises a plurality of first TCO residue square rings 1321 arranged adjacent to each other along the extension direction of the isolation groove 131, and the second TCO residue group 133 comprises a plurality of second TCO residue square rings 1331 arranged adjacent to each other along the extension direction of the isolation groove 131, and the top corners of the first TCO residue square ring 1321 and the second TCO residue square ring 1331 are staggered.

[0038] The silicon substrate has two main surfaces, a light facing surface and a back light surface. The light facing surface is directly facing the sunlight, and the back light surface is the other side. The two surfaces are arranged oppositely.

[0039] Two different regions, the first region 110 and the second region 120, are arranged on the back light surface of the silicon substrate, and the first region 110 and the second region 120 are arranged alternately and do not overlap. Specifically, a plurality of first regions 110 and a plurality of second regions 120 are arranged alternately along a first direction, and the first region 110 and the second region 120 both extend along a second direction, and the second direction intersects the first direction. The first region 110 and the second region 120 can be arranged alternately along the transverse direction of the silicon substrate and extend along the longitudinal direction, that is, the first direction can be the transverse direction of the back contact battery, and the second direction can be the longitudinal direction of the back contact battery, and the two directions are perpendicular to each other. Of course, in other embodiments, the first direction and the second direction can also be other directions, for example, the two directions can be diagonal directions of the silicon substrate, and the specific embodiments are not limited here. The first region 110 and the second region 120 do not overlap each other, and the first region 110 and the second region 120 are arranged adjacent to each other.

[0040] The first region 110 is provided with a first-polarity polysilicon layer 112, and the second region 120 is provided with a second-polarity amorphous silicon layer 122. The polarities of the first-polarity polysilicon layer 112 and the second-polarity amorphous silicon layer 122 are different. Specifically, the first-polarity polysilicon layer 112 can be a P-type polysilicon layer, and the second-polarity amorphous silicon layer 122 can be an N-type amorphous silicon layer. Alternatively, the first-polarity polysilicon layer 112 can be an N-type polysilicon layer, and the second-polarity amorphous silicon layer 122 can be a P-type amorphous silicon layer. The first-polarity polysilicon layer 112 and the second-polarity amorphous silicon layer 122 form regions with different electrical properties, supporting the formation of a PN junction and the separation of carriers.

[0041] The TCO film layer 130 covers the first-polarity polysilicon layer 112 and the second-polarity amorphous silicon layer 122. The TCO film layer 130 has electrical conductivity. The isolation groove 131 is arranged at a position adjacent to the first region 110 and the second region 120. The isolation groove 131 penetrates the TCO film. In order to prevent the first region 110 and the second region 120 from being electrically connected through the TCO film layer 130 and to avoid short circuiting between the PN junction regions, the isolation groove 131 is formed by two or more laser shots.

[0042] It can be understood that the first region 110 and the second region 120 are arranged alternately. The position adjacent to the first region 110 and the second region 120 can be a position close to the second region 120 in the first region 110 or a position close to the first region 110 in the second region 120, which is not limited herein.

[0043] The isolation groove 131 is formed by two or more laser shots on the TCO film. Laser shots are usually performed in a dot matrix manner, that is, a series of laser dots are used to perform laser shots on the TCO film. After each laser shot, a light spot is formed, and a circular ring-shaped TCO residue is formed around the light spot. This is because, during the laser shot process, part of the TCO film is evaporated or melted by the laser energy, and the surrounding TCO film forms a circular ring-shaped residue due to uneven heating. Since the isolation groove 131 is formed by two or more laser shots, each laser includes a plurality of parallel laser dots, that is, the isolation groove 131 is formed by at least two lasers along the width direction of the isolation groove 131, and each laser is shot along the extension direction of the isolation groove 131. When the isolation groove 131 is formed by several laser shots, the isolation groove 131 has several groups of TCO residues. The isolation groove 131 has at least a first TCO residue group 132 and a second TCO residue group 133 arranged adjacent to each other. The laser shot points are arranged densely, and the adjacent circular ring-shaped TCO residues are pressed against each other, so that the original circular ring-shaped residue gradually changes into a square ring shape.

[0044] It can be understood that the TCO residue forms a square ring, which is generally square in shape. Since it is formed by the mutual pressing of adjacent circular ring-shaped TCO residues, there may be arc-shaped lines or arc-shaped bends at some positions.

[0045] By adjusting the arrangement of the laser emission points, the top corners of the adjacent TCO residual square rings at the intersection of the isolation groove 131 are staggered. This staggered design makes only three adjacent light spots intersect at the intersection of the top corners of the TCO residual square rings, instead of four light spots. On the one hand, due to the staggered top corners, the emitted light spots are no longer aligned side by side, reducing the overlap of the four adjacent light spots, greatly reducing the overlapping area of the adjacent light spots in the laser process, and reducing the damage of the laser light spots. On the other hand, due to the staggered top corners, the first TCO residual square ring 1321 and the second TCO residual square ring 1331 are not easy to form a complete and continuous conductive path between them along the width direction of the isolation groove 131. This design reduces the conductive connection in the overlapping area, thereby reducing the risk of short circuit and greatly reducing the possibility of short circuit in the pn junction area. Even if there is some deviation in the manufacturing process, the adjacent residual square rings are not easy to form a continuous conductive path, ensuring the normal operation and high efficiency of the battery.

[0046] In this embodiment, due to the staggered top corners of the first TCO residual square ring 1321 and the second TCO residual square ring 1331, even if a partial connection is formed during the manufacturing process, it is not easy to form a complete conductive path in the pn junction area, thereby greatly reducing the risk of battery short circuit.

[0047] In one embodiment, the isolation groove 131 is arranged in the first area 110 near the second area 120.

[0048] As shown in Figure 4 In the first area 110, a tunnel oxide layer, a first polarity polysilicon layer, a phosphor-silicon glass layer, a first passivation layer, and a second polarity amorphous silicon layer are sequentially stacked. In the second area 120, a first passivation layer and a second polarity amorphous silicon layer are sequentially stacked. The TCO film layer 130 is covered on the second polarity amorphous silicon layer 122 in the first area 110 and the second area 120. The front surface of the silicon substrate can also be sequentially stacked with a second passivation layer 140 and an anti-reflection layer 150. The stacking in this embodiment refers to the positional relationship between the above-mentioned layers, and does not exclude the case where other functional layers are arranged between the above-mentioned layers.

[0049] Generally, the processing sequence is to stack a tunneling oxide layer, a first polarity polysilicon layer 112 and a phosphosilicate glass layer on the back surface of the silicon substrate in sequence, etch and remove the first passivation layer, the first polarity polysilicon layer 112 and the phosphosilicate glass layer stacked in the second region 120, and then continue to stack a first passivation layer, a second polarity amorphous silicon layer 122 and a TCO film layer 130 in sequence. In the first region 110, the number of stacked layers is not etched, and the distance between the TCO film layer 130 in the first region 110 and the front surface of the silicon substrate is greater than the distance between the TCO film layer 130 in the second region 120 and the front surface of the silicon substrate. The isolation groove 131 is opened in the first region 110 close to the second region 120, which is more convenient for processing operation, so as to better ensure the isolation effect between the first region 110 and the second region 120.

[0050] Example Two

[0051] In some embodiments, the lengths of the adjacent sides of the first TCO residual square ring 1321 and the second TCO residual square ring 1331 are the same.

[0052] Since the lengths of the adjacent sides of the first TCO residual square ring 1321 and the second TCO residual square ring 1331 are the same, they can be arranged in line along the extension direction of the isolation groove 131, which simplifies the manufacturing process and improves the repeatability and consistency of the process. If the lengths of the adjacent sides of the first TCO residual square ring 1321 and the second TCO residual square ring 1331 are different, there may be a four-corner alignment in some positions, thereby increasing the risk of short circuit. By ensuring that the lengths of the sides of the residual square ring are the same, the four-corner alignment can be better avoided in the design and manufacturing process of the isolation groove 131, and the possibility of short circuit is reduced.

[0053] In some embodiments, the lengths of the adjacent sides of the first TCO residual square ring 1321 and the second TCO residual square ring 1331 are L, and the distance between the adjacent top corners of the first TCO residual square ring 1321 and the second TCO residual square ring 1331 is d, 0.05L≤d≤0.5L.

[0054] The distance d between the adjacent top corners of the first TCO residual square ring 1321 and the second TCO residual square ring 1331 is along the extension direction of L, which can be the distance between the top corner of the first TCO residual square ring 1321 and the top corner of the second TCO residual square ring 1331, as shown in Figure 2 , or the distance between the top corner of the first TCO residual square ring 1321 and the bottom corner of the second TCO residual square ring 1331, as shown in Figure 3 .

[0055] When the distance d between adjacent top corners is greater than 0.05L, the situation that the four adjacent TCO residual square rings are aligned at the intersection of the isolation trenches 131 can be effectively avoided. The four-corner alignment increases the risk of short circuit, and the minimum value of d ensures that there is enough distance between the top corners, reducing the risk of short circuit. At the same time, due to the continuous adjacent contact of the first TCO residual square ring 1321 and the second TCO residual square ring 1331, 0.5L is the maximum distance that can be reached between the adjacent top corners of the first TCO residual square ring 1321 and the second TCO residual square ring 1331.

[0056] It can be understood that 0.05L≤d≤0.5L can be achieved by precisely controlling the position and spacing of the laser emission points during the manufacturing process.

[0057] Example Three

[0058] In some embodiments, the length of the side of the first TCO residual square ring 1321 perpendicular to the extension direction of the isolation trench 131 is D1, and the length of the side of the second TCO residual square ring 1331 perpendicular to the extension direction of the isolation trench 131 is D2, D1<D2.

[0059] The side perpendicular to the extension direction of the isolation trench 131 is the side perpendicular to the adjacent sides of the first TCO residual square ring 1321 and the second TCO residual square ring 1331. There are two equal-length sides in one TCO residual square ring, and they are oppositely arranged.

[0060] The design of D1<D2 makes the overlapping area of the first TCO residual square ring 1321 and the second TCO residual square ring 1331 at the intersection of the isolation trench 131 smaller. Even if there are three adjacent residual square rings overlapping, due to the small overlapping area, the conductive path formed is very limited, thereby greatly reducing the possibility of short circuit.

[0061] In some embodiments, 0.05D2≤D1≤0.5D2.

[0062] By setting D1 between 0.05 times and 0.5 times of D2, the compactness and efficiency of the battery structure can be maintained while ensuring the isolation effect. If D1 is too small, it may cause the first TCO residual square ring 1321 to be too thin, affecting its stability and conductivity performance in the battery structure; if D1 is too large, it may increase the overlapping area and affect the isolation effect.

[0063] Example Four

[0064] In some embodiments, the area of the first TCO residual group 132 is smaller than the area of the second TCO residual group 133.

[0065] The first TCO residue group 132 is formed by the first laser irradiation TCO film layer 130, and the second TCO residue group 133 is formed by the second laser irradiation TCO film layer 130. The second laser irradiation is performed after the first laser irradiation.

[0066] The first laser and the second laser irradiate along the extension direction of the isolation groove 131, each of the first laser and the second laser includes a plurality of laser spots arranged in the same direction, forms a plurality of continuous light spots, and converges to form a strip-shaped light spot. The first laser forms a first strip-shaped light spot, and the second laser forms a second strip-shaped light spot. In general, the first laser and the second laser have the same intensity, and the interval distance of the laser spots is also the same, so that the first strip-shaped light spot and the second strip-shaped light spot have the same area. The first strip-shaped light spot and the second strip-shaped light spot partially overlap, and at the overlapping position, the second TCO residue group 133 occupies part of the position of the first TCO residue group 132, so that the area of the first TCO residue group 132 is reduced.

[0067] The area of the first TCO residue group 132 is smaller than the area of the second TCO residue group 133, even if three adjacent residual square rings overlap at the intersection of the isolation groove 131, the conductive path formed is very limited, which further reduces the possibility of the conductive path and reduces the risk of short circuit.

[0068] In some embodiments, the area of the first TCO residue group 132 is 50% to 95% of the area of the second TCO residue group 133.

[0069] The area of the first TCO residue group 132 is 50% to 95% of the area of the second TCO residue group 133, that is, the overlapping area of the first strip-shaped light spot and the second strip-shaped light spot is 50% to 5%. When the overlapping area of the first strip-shaped light spot and the second strip-shaped light spot exceeds 50%, the laser damage increases, which leads to an increase in the dark saturation current density (J02) and a decrease in the fill factor (FF). J02 is an important parameter for measuring the surface recombination rate of a solar cell, and its increase will significantly reduce the open-circuit voltage (Voc) of the cell, thereby reducing the overall efficiency; FF is an important parameter for measuring the output characteristics of a solar cell, and its decrease will directly affect the output power and efficiency of the cell. When the overlapping area of the first strip-shaped light spot and the second strip-shaped light spot is less than 5%, it is easy to cause incomplete removal of the TCO film layer 130, form an electrical path, short-circuit the PN junction, and reduce the performance of the cell.

[0070] The above is only a preferred embodiment of the present application, and is not intended to limit the present application. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An HBC battery characterized by, The application relates to a HBC battery, comprising: a silicon substrate having a back light surface and a light surface arranged oppositely, a first area and a second area arranged alternately on the back light surface of the silicon substrate; a first polarity polysilicon layer arranged in the first area, a second polarity amorphous silicon layer arranged in the second area, a TCO film layer covering the first area and the second area, and an isolation groove arranged on the TCO film of the first area and the second area adjacent position, the isolation groove penetrating the TCO film layer; at least a first TCO residue group and a second TCO residue group arranged adjacent in the isolation groove, the first TCO residue group comprising a plurality of first TCO residue square rings arranged adjacent along the extension direction of the isolation groove, the second TCO residue group comprising a plurality of second TCO residue square rings arranged adjacent along the extension direction of the isolation groove, and the top corners of the first TCO residue square ring and the second TCO residue square ring adjacent are staggered.

2. The HBC battery of claim 1, wherein, The isolation groove is arranged in the first area close to the second area.

3. The HBC battery of claim 1, wherein, The length of the adjacent edges of the first TCO residue square ring and the second TCO residue square ring is the same.

4. The HBC battery of claim 3, wherein, The length of the adjacent edges of the first TCO residue square ring and the second TCO residue square ring is L, the distance between the adjacent top corners of the first TCO residue square ring and the second TCO residue square ring is d, and 0.05L<=d<=0.5L.

5. The HBC battery of claim 1, wherein, The length of the edge perpendicular to the extension direction of the isolation groove in the first TCO residue square ring is D1, and the length of the edge perpendicular to the extension direction of the isolation groove in the second TCO residue square ring is D2, and D1 6. The HBC battery of claim 5, wherein, 0.05D2<=D1<=0.5D2.

7. The HBC battery of claim 1, wherein, The area of the first TCO residue group is smaller than the area of the second TCO residue group.

8. The HBC battery of claim 7, wherein, The area of the first TCO residue group is 50% to 95% of the area of the second TCO residue group.

9. A battery assembly characterized by, The application further discloses a HBC battery comprising any one of claims 1 to 8.

10. A photovoltaic system characterized by, The application further discloses a battery assembly comprising claim 9.

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