Cooled manipulator for ultra-high vacuum process device, ultra-high vacuum process device, and ultra-high vacuum deposition method

Abstract

The invention relates to a cooled manipulator (10) for an ultra-high vacuum process device of a structure comprising one or more layers. According to the invention, the cooled manipulator for an ultra-high vacuum process device comprises: - a cooling device (12) comprising a solid material, - a rotating support (14) integral with the cooling device, - a reservoir (16) supplied by a circulation of a cryogenic fluid, configured to be moved between two positions (P1) and (P2), the first in which the reservoir is in contact with the cooling device, the second in which the reservoir is not in contact with the cooling device. Figure for the abstract: Fig. 1.

Description

Title of the invention: Cooled manipulator for ultra-high vacuum process device, ultra-high vacuum process device, and ultra-high vacuum deposition method. Technical field

[0001] The present invention relates generally to a cooled manipulator.

[0002] It relates more particularly to a cooled manipulator usable in a device for implementing a treatment process (in particular deposition or engraving) under vacuum, compatible with ultra-high vacuum, of a structure comprising one or more layers.

[0003] The invention finds a particularly advantageous application in the deposition of materials under vacuum and more particularly under ultra-high vacuum.

[0004] It also relates to a device for implementing an ultra-high vacuum process and an ultra-high vacuum deposition method. Technological background

[0005] Vacuum processing methods for a structure comprising one or more layers (or "vacuum processes") include, in particular, material deposition processes, dry etching processes, heat treatment processes, oxidation processes, and nitriding processes. Deposition processes include, in particular, sputtering, molecular beam epitaxy, chemical vapor deposition, and atomic layer deposition. Etching processes include, in particular, reactive ion etching and plasma etching.

[0006] Combined with lithography and wet etching techniques, vacuum processes enable the creation of micro and nanometric structures with applications in various fields such as microelectronics, optoelectronics and biotechnologies.

[0007] The quality of the vacuum used during these vacuum processes is essential to ensure the conformity of the deposits, including in particular the purity and crystalline structure of the deposit, and the quality of the engravings, including in particular the directionality and homogeneity of the engraving.

[0008] Depending on the deposition techniques used, and the desired quality of the deposits, etching, heat treatment, oxidation, and nitriding, different vacuum levels are required. A high vacuum, i.e., a vacuum at a pressure between 10⁻³ and 10⁻⁹ mbar, is sufficient for standard-quality depositions, etchings, heat treatments, oxidations, and nitridings. An ultra-high vacuum, i.e., a vacuum at a pressure below 10⁻⁹ mbar, is however necessary for high-quality deposition, etching, heat treatment, oxidation, nitriding, for example for molecular beam epitaxy.

[0009] To achieve a pressure of 10⁻⁹ mbar, the chamber must be compatible with oven heating performed prior to obtaining ultra-high vacuum. Oven heating is a process of heating the chamber that allows for the desorption and removal by pumping of molecules present on the surface of the chamber's internal walls, such as water or carbon dioxide molecules, which could contaminate the substrates placed in the chamber during the deposition, etching, heat treatment, oxidation, or nitriding process. To be compatible with an oven heating process, the chamber materials must be able to withstand a temperature, for example, above 150°C for several hours without being subject to outgassing phenomena whose products would contaminate the substrate during the deposition, etching, heat treatment, oxidation, or nitriding process.This condition specifically excludes the presence of polymer materials or other materials with high vapor pressure within the enclosure. To create an ultra-high vacuum enclosure compatible with ultra-high vacuum, all seals must be metallic and sealing is achieved using metal membranes and metal-to-metal contacts.

[0010] For the implementation of certain processes, in particular the deposition of thin films of materials with a certain crystalline structure, the deposition must be carried out at cryogenic temperatures, i.e. between -273 degrees Celsius and -150 degrees Celsius.

[0011] In addition, to ensure the homogeneity of the processes put in place, the substrate on which the deposit is made must be able to be rotated, for example to guarantee the uniformity of the deposited material.

[0012] For the process in question to be industrially compatible, the process must also be able to be carried out on substrates of a minimum size, for example, with a diameter greater than or equal to two inches. An ultra-high vacuum compatible manipulator is subject to the same design restrictions as an ultra-high vacuum compatible chamber.

[0013] For the deposition of certain materials in thin films, for example thin films exhibiting superconducting properties, while meeting industrial requirements, the above problems are cumulative:

[0014] - during deposition, the substrate must be cooled to cryogenic temperatures, that is- that is, below -150°C;

[0015] - during deposition, it is necessary to rotate the substrate to make the homogeneous growth;

[0016] - the manipulator must be ultra-high vacuum compatible,

[0017] - the manipulator must be compatible with the requirements specific to a process industrial, in particular the treatment by said process of several substrates in succession with the shortest possible process reset time between processes. To ensure this time is as short as possible, the temperature of the substrate holder must not exceed the cryogenic temperature limit and a pressure below 10⁻⁹ mbar must be maintained.

[0018] The manipulators and vacuum process devices known to those skilled in the art do not address all of these issues simultaneously. In the document "An Ultra-High-Vacuum Rotating Sample Manipulator with Cryogenic Cooling," the described manipulator is not ultra-high vacuum compatible because PTFE is used, and it is not compatible with an industrial deposition device. In document US4459823, the disclosed manipulator is not ultra-high vacuum compatible. Furthermore, it is not suitable for industrial production, among other reasons because the manipulator must be manually replenished with cryogenic liquid.

[0019] There is therefore a need for an ultra-high vacuum compatible manipulator that addresses all these issues at once. Summary of the invention

[0020] The invention aims to provide a solution to these problems by proposing a cooled manipulator for a device for implementing a vacuum treatment process (or "process device") compatible with ultra-high vacuum, of a structure comprising one or more layers, the manipulator comprising a cooling device comprising a solid material, a rotating support attached to the cooling device, and a reservoir supplied by a circulation of a cryogenic fluid, configured to be moved between two positions, the first in which the reservoir is in contact with the cooling device, the second in which the reservoir is not in contact with the cooling device.

[0021] The manipulator is ultra-high vacuum compatible in that it does not comprise any polymer material or material with a high vapor pressure. The manipulator is, for example, made entirely of metal or ceramic. Advantageously, the manipulator is therefore compatible with oven curing at 150 degrees Celsius.

[0022] Advantageously, the ultra-high vacuum compatible manipulator allows processes to be carried out at cryogenic temperatures, at pressures below 10-9 mbar (10-7 Pa) and to rotate a substrate in order to ensure the homogeneity of the process applied to the substrate carried by the manipulator, while allowing the process to be carried out on several substrates in succession with a very short process reset time between processes.

[0023] The manipulator is compatible with different types of vacuum material processing methods, for example material deposition processes or dry etching processes.

[0024] Other advantageous and non-limiting features of the manipulator according to the invention, taken individually or in all technically possible combinations, are as follows: - the manipulator is made of materials that can be oven-baked at a temperature greater than or equal to 150 degrees Celsius. - the material of the cooling device includes copper, silver or gold. - the heat capacity of the cooling device is greater than or equal to 1000 JK-1. - the surface of the tank opposite the cooling device comprises a thermally conductive material covered with a layer of a ductile and thermally conductive material, the layer of ductile and thermally conductive material being in contact with the cooling device in the first position. - The manipulator also includes: - a substrate support tray, - A mounting device attached to the cooling unit, configured to hold the substrate tray in contact with the cooling unit. - The substrate tray is configured to accommodate a substrate with a diameter of 2 inches or greater.

[0025] The invention also proposes a process implementation device (or "process device") compatible with ultra-high vacuum, comprising: - a vacuum deposition chamber, - a cooled manipulator according to one of the embodiments of the invention.

[0026] Other advantageous and non-limiting features of the vacuum process device according to the invention, taken individually or in all technically possible combinations, are as follows: - the device further comprises a double-walled enclosure positioned within the ultra-high vacuum deposition chamber, the volume separating the two walls of the double-walled enclosure being supplied with cryogenic fluid, comprising: - a first opening allowing the passage of the cooled manipulator so that the cooling device is located within the double-walled enclosure, and - a second opening allowing the transfer of the substrate carrier platform between the inside of the double-walled enclosure and the outside of the double-walled enclosure, - a third opening allowing the passage of a flow of atoms or molecules during deposition under ultra-high vacuum. - the device also includes effusion cells. - The device also includes instruments for monitoring the vacuum process.

[0027] The invention also proposes a method of deposition under ultra-high vacuum using a process device according to one of the embodiments of the invention, comprising the following steps: - E21) reduction of the pressure within the process device to reach a pressure less than or equal to 10-9 mbar, - E31) cooling of the cooling device by bringing the tank into contact with the cooling device and transferring a substrate-carrying tray carrying a substrate within the process device and maintaining the substrate-carrying tray in contact with the cooling device by means of the fastening device, - E41) removal of the tank, - E51) rotation of the cooling device, - E61) deposition of the material onto the substrate.

[0028] Other advantageous and non-limiting features of the vacuum deposition method according to the invention, taken individually or in all technically possible combinations, are as follows: - the deposition method further includes an oven step Eli) preceding step E21) or carried out during step E21), during which the process device is oven-cured at a temperature greater than or equal to 150 degrees Celsius.

[0029] Of course, the different features, variants and embodiments of the invention can be combined with each other in various ways insofar as they are not incompatible or mutually exclusive. Brief description of the figures

[0030] The following description, with reference to the attached drawings, given by way of non-limiting examples, will make it clear what the invention consists of and how it can be implemented.

[0031] On the attached drawings:

[0032] [Fig. 1] is a functional diagram of an ultra-high vacuum compatible cooled manipulator according to an embodiment of the invention;

[0033] [Fig.2a] and [Fig.2b] are functional diagrams of a cooled manipulator according to The embodiment shown in [Fig. 1] according to two possible configurations of the invention. [Fig. 2a] shows the cooling device in contact with the tank. [Fig. 2b] shows the cooling device at a distance from the tank;

[0034] [Fig.3] is a summary diagram of an ultra-high vacuum compatible process device according to an embodiment of the invention and comprising a cooled manipulator represented in [Fig.1].

[0035] [Fig.4] is a set of curves representing the evolution of the temperature at different points of an ultra-high vacuum compatible process device shown in [Fig.3] during several consecutive material deposition processes.

[0036] A cooled manipulator 10 for an ultra-high vacuum process device is shown in [Fig. 1]. A manipulator is a mechanical assembly generally comprising several degrees of freedom that allows a substrate (or sample) to be held in the vacuum chamber.

[0037] The cooled manipulator 10 comprises a cooling device 12 consisting of a solid material, a rotating support 14 integral with the cooling device 12, and a reservoir 16 supplied by a circulation of a cryogenic fluid, for example, liquid nitrogen. The reservoir 16 is configured to be moved between two positions P1 and P2: the first P1 in which the reservoir 16 is in contact with the cooling device 12, and the second P2 in which the reservoir 16 is not in contact with the cooling device 12.

[0038] In position PI, the reservoir 16 cools the cooling device 12 by conduction. In position P2, the cooling device 12 can be rotated with the rotating support 14 as explained below.

[0039] Vacuum processes include, for example, material deposition, material etching, heat treatment, oxidation, and nitriding. Material deposition includes, for example, sputtering and molecular beam epitaxy. Material etching includes, for example, dry etching processes.

[0040] In the embodiment considered, all the elements of the cooled manipulator 10 inside the vacuum chamber in which it is used are made of materials that can be oven-cured at a temperature greater than or equal to 150 degrees Celsius. Therefore, the manipulator 10 is not equipped with polymer seals and does not contain any high vapor pressure materials. Thus, the cooled manipulator 10 is compatible with ultra-high vacuum.

[0041] The tank 16 is, for example, made of steel and has, for example, the general shape of a hollow cylinder, having, for example, an internal volume greater than or equal to 250 cm³ and less than or equal to 1000 cm³, for example, 450 cm³, and containing the cryogenic fluid. In the embodiment considered, the tank 16 includes a supply for the circulation of the cryogenic fluid consisting of an inlet and an outlet for the circulation of the cryogenic fluid within the tank 16. In the embodiment considered, the tank 16 is configured to be continuously supplied. by circulating the cryogenic fluid. The cooled manipulator 10 is thus usable under industrial conditions.

[0042] The tank 16 is configured to be moved from position P1 to position P2 and from position P2 to position P1 by a linear movement actuated, for example, by a pneumatic cylinder. The cylinder force reaches, for example, 1800 N. The tank 16 is, for example, mounted on a bellows. When the tank 16 is brought into contact with the cooling device 12, the contact force is, for example, greater than or equal to 20 N / cm² in order to obtain good thermal contact between the tank 16 and the cooling device 12.

[0043] Heat transfer between the reservoir 16 and the cooling device 12 is not achieved here by brush contacts. Brush contacts create highly polluting particles through wear, for example in the context of semiconductors. Advantageously, since the rotation of the cooling device 12 is only carried out in position P2, in which the cooling device 12 and the reservoir 16 are not in contact, no particles are emitted by friction, ensuring the ultra-high vacuum compatibility of the cooled manipulator 10.

[0044] In the embodiment considered, in order to improve the thermal contact between the reservoir 16 and the cooling device 12, the surface of the reservoir 16 opposite the cooling device 12 comprises a thermally conductive material covered with a layer of a ductile and thermally conductive material 16a, the layer of ductile and thermally conductive material 16a being in contact with the cooling device 12 in the first position. Advantageously, the ductility of the material 16a makes it possible to obtain good mechanical contact, and consequently, good thermal contact between the reservoir 16 and the cooling device 12. The material 16a comprises, for example, a copper base coated with gold to increase its effusivity and to prevent the formation of oxides on the surface of the material 16a that would impair the mechanical and thermal performance of the material 16a.

[0045] The cooling device 12 is made of a solid material having, for example, the shape of a disc. In the embodiment considered, the solid material of the cooling device 12 comprises a material having a good specific heat capacity and good thermal conductivity, such as copper, silver, or gold. In the embodiment considered, the solid material has a specific heat capacity greater than or equal to 3850 JK⁻¹. Advantageously, the use of a material with these characteristics makes it possible to extend the cooling capacity of the cooling device 12, thus ensuring a large number of successive cooling processes before it is necessary to cool the cooling device 12 again by tilting the manipulator. cooled in the PI position, and to ensure rapid cooling of an element, for example a substrate or a substrate holder, brought into contact with the cooling device 12.

[0046] The rotating support 14 can be rotated, for example, at a speed greater than or equal to 5 revolutions per minute and less than or equal to 20 revolutions per minute. The rotational motion is transmitted, for example, by means of a rotating magnetic drive. In the embodiment considered, the rotating support 14 is cooled by an additional reservoir 22 containing a cryogenic fluid, for example, liquid nitrogen. Advantageously, this makes it possible to limit the heat input to the cooling device 12 by radiation and conduction.

[0047] The cooling device 12, being fixed to the rotating support 14, can be rotated around the same axis of rotation Al as that of the rotating support 14. The axis of rotation Al corresponds to the main axis of rotation of the cooling device 12.

[0048] The reservoir 16 cannot be rotated. Therefore, in the PI configuration, rotation of the cooling device is impossible due to the contact between the cooling device 12 and the reservoir 16. To allow rotation of the cooling device 12, the cooled manipulator 10 must be switched to the P2 configuration.

[0049] Figures [Fig. 2a] and [Fig. 2b] represent the cooled manipulator 10 in the two possible configurations P1 and P2. Figure [Fig. 2a] represents the P1 configuration, in which the reservoir 16 is in contact with the cooling device 12. In the P1 position, the reservoir 16 is configured to cool the cooling device 12 by contact. Through heat conduction, the reservoir 16, supplied with the cryogenic fluid, lowers the temperature of the cooling device 12.

[0050] In the embodiment considered, the temperature of the reservoir 16, and that of the cooling device 12 when the reservoir 16 is in contact with the cooling device 12, are lowered to cryogenic temperatures, i.e., to temperatures below -150 degrees Celsius, for example, to temperatures less than or equal to -180 degrees Celsius. Figure 2b shows configuration P2, in which the reservoir 16 is not in contact with the cooling device 12. In this configuration, the device 12 is not cooled by the reservoir 16.

[0051] Advantageously, the configuration of the cooled manipulator 10 makes it possible to limit the number of moving mechanical parts. Since the reservoir 16 is not rotating, it can be continuously supplied with cryogenic fluid without requiring complex parts with polymer seals that would make the cooled manipulator 10 incompatible with ultra-high vacuum.

[0052] In the embodiment considered, the cooled manipulator 10 further comprises: - a substrate support tray 18, - a fixing device 20 mounted on the cooling device 12, configured to keep the substrate support tray 18 in contact with the cooling device 12.

[0053] The substrate-holding platform 18 is configured to accommodate a substrate on which the process is carried out in a compatible ultra-high vacuum process chamber comprising the cooled manipulator 10.

[0054] The substrate support tray 18 is, for example, configured to accommodate a substrate with a diameter greater than or equal to 1 inch, for example 2 inches. The substrate support tray 18 is, for example, made of a highly conductive material such as molybdenum or an alloy such as stainless steel. The substrate is, for example, made of single-crystal sapphire. In the embodiment considered, a spring ring is used on the back of the substrate to firmly press the substrate against the substrate support 18. The use of a single-crystal sapphire substrate and a spring ring on the back of the substrate reduces the thermal resistance between the substrate and the substrate support tray 18 and, consequently, allows for a smaller temperature difference between the substrate and the substrate support tray 18.

[0055] The clamping device 20 is configured to firmly hold the substrate support tray 18 in contact with the cooling device 12, thereby reducing the thermal resistance between these two elements. In the open position, the clamping device 20 allows the transfer of the substrate support tray 18, which is introduced from a loading chamber. When the clamping device 20 is in the closed position, the substrate support tray 18 is firmly pressed against the cooling device 12, which cools and maintains the substrate support tray 18 and the substrate it holds. In the embodiment considered, a single actuator controls the linear movement of the reservoir 16 and the opening of the clamping device 20. In the PI configuration, the reservoir 16 is in contact with the cooling device 12, and the clamping device 20 is in the open position.In configuration P2, the reservoir 16 is not in contact with the cooling device 12 and the fastening device 20 is in the closed position.

[0056] Figure 3 represents a 100 ultra-high vacuum process device comprising: - a vacuum deposition chamber 40, - a cooled manipulator 10 according to one of the embodiments of the invention.

[0057] The ultra-high vacuum-compatible process device 100 is configured to perform the deposition of materials onto the substrate carried by the substrate-holding platform 18. The Material deposition can be achieved, for example, by sputtering or by molecular beam epitaxy.

[0058] In the embodiment considered, the ultra-high vacuum process device 100 also comprises: - a double-walled enclosure 42 positioned within the vacuum deposition enclosure 40, the volume separating the two walls of the double-walled enclosure 42 being supplied with cryogenic fluid, comprising: - a first opening 42a allowing the passage of the cooled manipulator 10 so that the cooling device 12 is located within the double-walled enclosure 42, and - a second opening 42b allowing the transfer of the substrate carrier platform 18 between the inside of the double-walled enclosure 42 and the outside of the double-walled enclosure 42, - a third opening 42c allowing the passage of a flow of atoms or molecules during deposition under ultra-high vacuum.

[0059] Supplying cryogenic fluid to the volume separating the two walls of the double-walled enclosure 42 helps to limit heat input by radiation.

[0060] The first opening 42a, the second opening 42b and the third opening 42c also make it possible to limit the heat input by radiation by limiting the space required for, respectively, the passage of the cooled manipulator 10, the transfer of the substrate carrier platform 18 and the passage of the flow of atoms or molecules during deposition under ultra-high vacuum.

[0061] In the embodiment considered, the ultra-high vacuum compatible process device 100 includes effusion cells 50. The ultra-high vacuum compatible process device 100 is in this embodiment a molecular beam epitaxy frame enabling the epitaxial growth of thin films on the substrate.

[0062] In the embodiment considered, the ultra-high vacuum process device 100 includes vacuum process monitoring instruments. These measuring instruments allow, among other things, the measurement of the thickness of material deposited on the substrate, the measurement of the growth rate of the deposited material, the characterization of the crystallographic structure of the deposited material, and the determination of the composition of the deposited material.

[0063] Figure 4 shows the substrate temperature during the growth of an aluminum layer on it, using the device according to one of the described embodiments. The graph also shows the temperatures of the aluminum effusion cell used. As these graphs show, a temperature below 110 K on the substrate can be maintained during deposition for 20 minutes.

[0064] The invention also relates to ultra-high vacuum deposition methods. The ultra-high vacuum compatible vacuum process device 100 can, for example, be advantageously used for implementing such methods.

[0065] The invention also relates to a method of deposition under ultra-high vacuum using a process device, and comprising the following steps: - a step E21) of reducing the pressure within the process device 100 to reach a pressure less than or equal to 10-9 mbar, - a step E31) of cooling the cooling device 12 by bringing the reservoir 16 into contact with the cooling device 12 and transferring a substrate-carrying tray 18 carrying a substrate within the process device 100 and maintaining the substrate-carrying tray 18 in contact with the cooling device 12 by means of the fastening device 20, - a step E41) of removing tank 16, - a step E51) of rotating the cooling device 12, - a step E61) of depositing the material onto the substrate.

[0066] Preferably, the ultra-high vacuum deposition method also includes an oven step E1) preceding step E21) or carried out during step E21), during which the process device 100 is oven-baked at a temperature greater than or equal to 150 degrees Celsius.

[0067] Of course, the different features, variants and embodiments of the invention can be combined with each other in various ways insofar as they are not incompatible or mutually exclusive.

[0068] The present invention is in no way limited to the embodiment described and represented, but a person skilled in the art will be able to make any variation in accordance with the invention.

[0069] Alternatively, the material of the cooling device 12 comprises aluminum, silver, or gold.

[0070] Alternatively, the ultra-high vacuum process device compatible with 100% ultra-high vacuum comprises: - a vacuum engraving chamber, - a cooled manipulator 10 according to one of the embodiments of the invention.

[0071] Alternatively, the ultra-high vacuum process device 100 comprises: - a spray chamber, - a cooled manipulator 10 according to one of the embodiments of the invention.

Claims

Demands

1. Cooled manipulator (10) for implementation device (100) of a vacuum treatment process, compatible with ultra-high vacuum, of a structure comprising one or more layers, the manipulator comprising: - a cooling device (12) comprising a solid material, - a rotating support (14) integral with the cooling device (12), - a reservoir (16) supplied by a circulation of a cryogenic fluid, configured to be moved between two positions (PI) and (P2), of which a first position in which the reservoir (16) is in contact with the cooling device (12) and a second in which the reservoir (16) is not in contact with the cooling device (12).

2. Cooled manipulator (10) according to claim 1, wherein the manipulator (10) is made of materials that can be oven-baked at a temperature greater than or equal to 150 degrees Celsius.

3. Cooled manipulator (10) according to any one of claims 1 and 2, wherein the material of the cooling device (12) comprises copper, silver, aluminum or gold.

4. Cooled manipulator (10) according to any one of claims 1 to 3, wherein the heat capacity of the cooling device (12) is greater than or equal to 1000 JK-1.

5. Cooled manipulator (10) according to any one of claims 1 to 4, wherein the surface of the reservoir (16) opposite the cooling device (12) comprises a thermally conductive material covered with a layer of a ductile and thermally conductive material (16a), the layer of ductile and thermally conductive material (16a) being in contact with the cooling device (12) in the first position.

6. Cooled manipulator (10) according to any one of claims 1 to 6, further comprising: - a substrate support tray (18), - a fixing device (20) mounted on the cooling device (12) and configured to keep the substrate support tray (18) in contact with the cooling device (12).

7. Cooled manipulator (10) according to claim 6, wherein the substrate-holding tray (18) is configured to accommodate a substrate with a diameter greater than or equal to 2 inches.

8. Device for implementing (100) a vacuum treatment process, compatible with ultra-high vacuum, of a structure comprising one or more layers and comprising: - a vacuum deposition chamber (40), - a cooled manipulator (10) according to any one of claims 1 to 7.

9. Implementation device (100) according to claim 8, further comprising: - a double-walled enclosure (42) positioned within the vacuum deposition enclosure (40), the volume separating the two walls of the double-walled enclosure (42) being supplied with cryogenic fluid, comprising: - a first opening (42a) allowing the passage of the cooled manipulator (10) so that the cooling device (12) is located within the double-walled enclosure (42), and - a second opening (42b) allowing the transfer of the substrate carrier platform (18) between the inside of the double-walled enclosure (42) and the outside of the double-walled enclosure (42), - a third opening (42c) allowing the passage of a stream of atoms or molecules during ultra-high vacuum deposition.

10. Implementation device (100) according to claim 8 or 9, further comprising effusion cells (50).

11. Implementation device (100) according to any one of claims 8 to 10, further comprising vacuum process monitoring measurement instruments.

12. A method of ultra-high vacuum deposition using an implementation device (100) according to any one of claims 8 to 11, comprising the following steps: - E21) reducing the pressure within the process implementation device to reach a pressure less than or equal to 10⁻⁹ mbar, - E31) cooling the cooling device by bringing the reservoir into contact with the cooling device and transferring a substrate-carrying tray carrying a substrate into the process implementation device and holding the substrate-carrying tray in contact with the cooling device by means of the fixing device, - E41) removal of the tank, - E51) rotation of the cooling device, - E61) deposition of the material on the substrate.

13. Ultra-high vacuum deposition method according to claim 12, further comprising an oven step E1) preceding step E21) or carried out during step E21), during which the process implementation device is oven-cured at a temperature greater than or equal to 150 degrees Celsius.

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