Electrostatic chuck, substrate supporting unit, and plasma processing apparatus

Abstract

To provide a technique that allows efficient transmission of an electric bias to a substrate.SOLUTION: An electrostatic chuck comprises a dielectric member, a bias electrode, and a floating electrode. The dielectric member includes a substrate support surface and a rear face on the opposite side of the substrate support surface. The bias electrode is arranged inside the dielectric member and between the substrate support surface and the rear face to receive an electric bias that is periodically generated. The floating electrode has a surface roughness smaller than the surface roughness of the bias electrode, and is arranged between the bias electrode and the rear face.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] Exemplary embodiments of the present disclosure relate to an electrostatic chuck, a substrate support, and a plasma processing apparatus. [Background technology]

[0002] A plasma processing apparatus is used in plasma processing of a substrate. The plasma processing apparatus described in the following Patent Document 1 includes a chamber and a substrate support. The substrate support is provided within the chamber and has a lower electrode and an electrostatic chuck. The electrostatic chuck is provided on the lower electrode. A bias electrode is provided inside the electrostatic chuck. A periodically generated electric bias is supplied to the bias electrode to attract ions from the plasma to a substrate on the substrate support. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2021-150056 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques that allow an electrical bias to be efficiently transferred to a substrate. [Means for solving the problem]

[0005] In one exemplary embodiment, an electrostatic chuck is provided. The electrostatic chuck includes a dielectric member, a bias electrode, and a floating electrode. The dielectric member includes a substrate support surface and a back surface opposite the substrate support surface. The bias electrode is disposed within the dielectric member and between the substrate support surface and the back surface for receiving a periodically generated electrical bias. The floating electrode has a surface roughness that is less than a surface roughness of the bias electrode and is disposed between the bias electrode and the back surface. Effect of the Invention

[0006] According to one exemplary embodiment, a technique is provided that allows an electrical bias to be efficiently transferred to a substrate. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. [Diagram 2] FIG. 1 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Diagram 3] 1 illustrates a cross-sectional view of a substrate support according to an exemplary embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Various exemplary embodiments will now be described in detail with reference to the drawings, in which the same or corresponding parts are designated by the same reference numerals.

[0009] Various exemplary embodiments will now be described in detail with reference to the drawings, in which the same or corresponding parts are designated by the same reference numerals.

[0010] FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas exhaust port is connected to an exhaust system 40 described later. The substrate support unit 11 is disposed in the plasma processing space, and has a substrate support surface for supporting a substrate.

[0011] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR plasma), a helicon wave plasma (HWP), a surface wave plasma (SWP), or the like. Also, various types of plasma generating units may be used, including an alternating current (AC) plasma generating unit and a direct current (DC) plasma generating unit. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Thus, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0012] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to execute various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0013] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining the configuration example of a capacitively coupled plasma processing apparatus.

[0014] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a part of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from a housing of the plasma processing chamber 10.

[0015] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0016] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one RF / DC electrode coupled to an RF power source 31 and / or a DC power source 32 described later may be disposed in the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Thus, the substrate support 11 includes at least one lower electrode.

[0017] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0018] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as a brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0019] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes at least one upper electrode. Note that the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0020] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include at least one flow modulation device to modulate or pulse a flow rate of the at least one process gas.

[0021] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0022] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0023] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0024] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0025] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular or combination of these pulse waveforms. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one period. The first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0026] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0027] Hereinafter, a substrate support according to an exemplary embodiment will be described with reference to Fig. 3. Fig. 3 is a cross-sectional view showing a substrate support according to an exemplary embodiment. A plasma processing apparatus 1 may include the substrate support shown in Fig. 3 as a substrate support part 11. Hereinafter, the substrate support shown in Fig. 3 will be referred to as the substrate support part 11.

[0028] As described above, the substrate support 11 includes the base 1110 and the electrostatic chuck 1111. The substrate support 11 may further include an insulating member 1112 and a ground member 1113. The insulating member 1112 extends along the outer periphery of the base 1110 and the electrostatic chuck 1111. The insulating member 1112 is made of an insulating material such as quartz. The ground member 1113 extends along the outer periphery of the insulating member 1112 on the radial outer side of the base 1110. The ground member 1113 is made of a metal such as aluminum and is electrically grounded.

[0029] The base 1110 may have a substantially disk shape. In one embodiment, the base 1110 may be formed of a metal such as aluminum. The base 1110 may provide a flow path 1110a therein. A temperature control medium is supplied to the flow path 1110a from the chiller unit CU. The temperature control medium supplied to the flow path 1110a is returned to the chiller unit CU through the flow path 1110a. The temperature control medium may include a coolant such as brine. In the plasma processing apparatus 1, heat exchange is performed between the substrate W and the electrostatic chuck 1111, and heat exchange is performed between the electrostatic chuck 1111 and the base 1110. In addition, the base 1110 exchanges heat with the temperature control medium passing through the flow path 1110a. This adjusts the temperature of the substrate W.

[0030] In one embodiment, the plasma processing apparatus 1 may further include a source high frequency power supply 51. The source high frequency power supply 51 may be the above-mentioned first RF generating unit 31a, and is configured to generate a source high frequency power (or a source RF signal) to generate plasma from the gas in the chamber 10. The source high frequency power supply 51 is connected to the high frequency electrode via a matching unit 51m, and is configured to supply source high frequency power to the high frequency electrode. The matching unit 51m includes a matching circuit for matching the impedance of the load of the source high frequency power supply 51 to the output impedance of the source high frequency power supply 51. In one embodiment, the high frequency electrode may be the base 1110. The high frequency electrode may be another electrode or an upper electrode in the substrate support 11.

[0031] The electrostatic chuck 1111 is provided on a base 1110. The electrostatic chuck 1111 includes a dielectric member 1111d, a bias electrode 1111e, and a floating electrode 1111f.

[0032] The dielectric member 1111d may be the ceramic member 1111a described above. The dielectric member 1111d may be made of aluminum oxide or aluminum nitride. The dielectric member 1111d may be made of other ceramics or other dielectric materials.

[0033] The dielectric member 1111d has a substantially disk shape. The dielectric member 1111d includes a substrate supporting surface SS and a back surface BS. The substrate supporting surface SS constitutes the upper surface of the electrostatic chuck 1111. The substrate supporting surface SS is the above-mentioned central region 111a, and has a substantially circular shape. The substrate W is placed on the substrate supporting surface SS. The back surface BS is the lower surface of the electrostatic chuck 1111, and is the surface opposite to the substrate supporting surface SS. The back surface BS is located between the substrate supporting surface SS and the base 1110.

[0034] The electrostatic chuck 1111 may further include the electrostatic electrode 1111b described above. The electrostatic electrode 1111b is a film formed of a conductive material such as a metal (e.g., tungsten) and is disposed within the dielectric member 1111d. The electrostatic electrode 1111b is disposed between the substrate support surface SS and the bias electrode 1111e. The electrostatic electrode 1111b is electrically connected to the DC power supply 50 via the switch 50s. When a DC voltage from the DC power supply 50 is applied to the electrostatic electrode 1111b, an electrostatic attractive force is generated between the electrostatic chuck 1111 and the substrate W. The substrate W is attracted to the electrostatic chuck 1111 by the generated electrostatic attractive force and is held by the electrostatic chuck 1111.

[0035] The bias electrode 1111e is configured to receive a periodically generated electrical bias to attract ions from the plasma in the chamber 10 to the substrate W. The bias electrode 1111e is a film formed of a conductive material, such as a metal (e.g., tungsten), and is disposed within the dielectric member 1111d. The bias electrode 1111e is disposed between the substrate support surface SS and the back surface BS. In one embodiment, the bias electrode 1111e may be disposed between the electrostatic electrode 1111b and the back surface BS.

[0036] A bias power supply 52 is electrically connected to the bias electrode 1111e. The bias power supply 52 may periodically generate a voltage pulse as an electric bias. The voltage pulse may be a DC voltage pulse or a negative DC voltage pulse. The voltage pulse may be a rectangular wave pulse. In this case, the bias power supply 52 may be the above-mentioned first DC generating unit 32a. Alternatively, the bias power supply 52 may generate a bias high frequency power. In this case, the bias power supply 52 is electrically connected to the bias electrode 1111e via a matching unit. In this case, the bias power supply 52 may be the above-mentioned second RF generating unit 31b.

[0037] The floating electrode 1111f is a film made of a conductive material such as a metal (e.g., tungsten), and is disposed within the dielectric member 1111d. The floating electrode 1111f is disposed between the bias electrode 1111e and the back surface BS. The floating electrode 1111f has a surface roughness smaller than that of the bias electrode 1111e. The floating electrode 1111f is electrically floating within the dielectric member. That is, the floating electrode 1111f is not connected to wiring connected to a ground or a power supply.

[0038] The capacitance between the bias electrode 1111e and the back surface BS in the substrate support 11 is the capacitance of two capacitors connected in series. The first capacitor of the two capacitors is formed between the bias electrode 1111e and the floating electrode 1111f. The second capacitor of the two capacitors is formed between the floating electrode 1111f and the base 1110. One electrode constituting each of the first capacitor and the second capacitor is the floating electrode 1111f having a small surface area. Therefore, the capacitance between the bias electrode 1111e and the back surface BS in the substrate support 11 is smaller than the capacitance between the bias electrode 1111e and the back surface BS in the substrate support 11 without the floating electrode 1111f. Therefore, according to the substrate support 11, the electric bias supplied to the bias electrode 1111e is efficiently transmitted to the substrate W. Furthermore, according to the substrate support 11, when the electric bias is a voltage pulse, it is possible to suppress the rounding of the waveform of the electric bias.

[0039] Furthermore, according to the substrate support part 11, even if the thickness of the electrostatic chuck 1111 between the bias electrode 1111e and the rear surface BS is small, it is possible to reduce the electrostatic capacitance between the bias electrode 1111e and the rear surface BS in the substrate support part 11. Therefore, according to the substrate support part 11, heat exchange between the substrate W and the base 1110 via the electrostatic chuck 1111 is promoted.

[0040] In one embodiment, a region 1110r on the surface of the base 1110 facing the back surface BS may also have a surface roughness smaller than that of the bias electrode 1111e. The region 1110r is at least a part of the upper surface of the base 1110. In this embodiment, the capacitance of the second capacitor described above is further reduced. Therefore, the electrical bias supplied to the bias electrode 1111e is more efficiently transmitted to the substrate W.

[0041] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. In addition, elements in different embodiments can be combined to form other embodiments.

[0042] For example, the bias electrode 1111e and the electrostatic electrode 1111b may be a common electrode. That is, the bias electrode 1111e may also serve as the electrostatic electrode 1111b. In this case, the electrostatic electrode 1111b is omitted from the electrostatic chuck 1111, and the bias power supply 52 and the DC power supply 50 are electrically connected to the bias electrode 1111e.

[0043] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E13] below.

[0044] [E1] a dielectric member including a substrate support surface and a back surface opposite the substrate support surface; a bias electrode disposed within the dielectric member and between the substrate support surface and the backside surface for receiving a periodically generated electrical bias; a floating electrode having a surface roughness smaller than a surface roughness of the bias electrode and disposed between the bias electrode and the back surface; An electrostatic chuck comprising:

[0045] [E2] The electrostatic chuck of E1, wherein the floating electrode is electrically floating within the dielectric member.

[0046] [E3] The electrostatic chuck of any one of E1 and E2, further comprising an electrostatic electrode disposed within the dielectric member and between the substrate support surface and the bias electrode.

[0047] [E4] The base and an electrostatic chuck provided on the base; Equipped with The electrostatic chuck comprises: a dielectric member including a substrate support surface and a back surface, the back surface being disposed between the substrate support surface and the base; a bias electrode disposed within the dielectric member and between the substrate support surface and the backside surface for receiving a periodically generated electrical bias; a floating electrode having a surface roughness smaller than a surface roughness of the bias electrode and disposed between the bias electrode and the back surface; include, Board support.

[0048] [E5] The substrate support of E4, wherein the floating electrode is electrically floating within the dielectric member.

[0049] [E6] The base is made of metal, a surface roughness of the surface of the base facing the rear surface is smaller than a surface roughness of the bias electrode; A substrate support according to E4 or E5.

[0050] [E7] The substrate support according to any one of E4 to E6, wherein the electrostatic chuck further includes an electrostatic electrode disposed within the dielectric member and between the substrate support surface and the bias electrode.

[0051] [E8] The substrate support according to any one of E4 to E7, wherein the base provides a flow path for a temperature control medium therein.

[0052] [E9] A chamber; a substrate support disposed within the chamber; a plasma generating unit configured to generate a plasma in the chamber; a bias power supply configured to generate an electrical bias to attract ions to a substrate on the substrate support; Equipped with The substrate support includes: The base and an electrostatic chuck provided on the base; Equipped with The electrostatic chuck comprises: a dielectric member including a substrate support surface and a back surface, the back surface being disposed between the substrate support surface and the base; a bias electrode electrically connected to the bias power supply and disposed within the dielectric member and between the substrate support surface and the back surface; a floating electrode having a surface roughness smaller than a surface roughness of the bias electrode and disposed between the bias electrode and the back surface; include, Plasma processing equipment.

[0053] [E10] The plasma processing apparatus of E9, wherein the floating electrode is electrically floating within the dielectric member.

[0054] [E11] The base is made of metal, a surface roughness of the surface of the base facing the rear surface is smaller than a surface roughness of the bias electrode; The plasma processing apparatus according to E9 or E10.

[0055] [E12] Further comprising a DC power supply; the electrostatic chuck further includes an electrostatic electrode electrically connected to the DC power supply and disposed within the dielectric member and between the substrate support surface and the bias electrode. The plasma processing apparatus according to any one of E9 to E11.

[0056] [E13] The plasma processing apparatus according to any one of E9 to E12, wherein the base provides a flow path for a temperature control medium therein.

[0057] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0058] Reference Signs List 1: plasma processing apparatus, 10: chamber, 11: substrate support, 1110: base, 1111: electrostatic chuck, SS: substrate support surface, BS: back surface, 1111e: bias electrode, 1111f: floating electrode.

Claims

1. a dielectric member including a substrate support surface and a back surface opposite the substrate support surface; a bias electrode disposed within the dielectric member and between the substrate support surface and the backside surface for receiving a periodically generated electrical bias; a floating electrode having a surface roughness smaller than a surface roughness of the bias electrode and disposed between the bias electrode and the back surface; An electrostatic chuck comprising:

2. The electrostatic chuck of claim 1 , wherein the floating electrode is electrically floating within the dielectric member.

3. 3. The electrostatic chuck of claim 1, further comprising an electrostatic electrode disposed within the dielectric member and between the substrate support surface and the bias electrode.

4. The base and an electrostatic chuck provided on the base; Equipped with The electrostatic chuck comprises: a dielectric member including a substrate support surface and a back surface, the back surface being disposed between the substrate support surface and the base; a bias electrode disposed within the dielectric member and between the substrate support surface and the backside surface for receiving a periodically generated electrical bias; a floating electrode having a surface roughness smaller than a surface roughness of the bias electrode and disposed between the bias electrode and the back surface; include, Board support.

5. The substrate support of claim 4 , wherein the floating electrode is electrically floating within the dielectric member.

6. The base is made of metal, a surface roughness of the surface of the base facing the rear surface is smaller than a surface roughness of the bias electrode; The substrate support of claim 4.

7. The substrate support according to any one of claims 4 to 6, wherein the electrostatic chuck further comprises an electrostatic electrode disposed within the dielectric member and between the substrate support surface and the bias electrode.

8. 7. The substrate support according to claim 4, wherein the base provides a flow path for a temperature control medium therein.

9. A chamber; a substrate support disposed within the chamber; a plasma generating unit configured to generate a plasma in the chamber; a bias power supply configured to generate an electrical bias to attract ions to a substrate on the substrate support; Equipped with The substrate support includes: The base and an electrostatic chuck provided on the base; Equipped with The electrostatic chuck comprises: a dielectric member including a substrate support surface and a back surface, the back surface being disposed between the substrate support surface and the base; a bias electrode electrically connected to the bias power supply and disposed within the dielectric member and between the substrate support surface and the back surface; a floating electrode having a surface roughness smaller than a surface roughness of the bias electrode and disposed between the bias electrode and the back surface; include, Plasma processing equipment.

10. The plasma processing apparatus of claim 9 , wherein the floating electrode is electrically floating within the dielectric member.

11. The base is made of metal, a surface roughness of the surface of the base facing the rear surface is smaller than a surface roughness of the bias electrode; The plasma processing apparatus according to claim 9 .

12. Further comprising a DC power supply; the electrostatic chuck further includes an electrostatic electrode electrically connected to the DC power supply and disposed within the dielectric member and between the substrate support surface and the bias electrode. The plasma processing apparatus according to any one of claims 9 to 11.

13. 12. The plasma processing apparatus according to claim 9, wherein the base provides a flow path for a temperature control medium therein.

Images