Gradient encapsulation of waveguide gratings
The waveguide combiner design with a gradient encapsulant and asymmetric structures addresses the challenge of controlling diffraction efficiency and directivity, ensuring effective image overlay in augmented reality devices.
Patent Information
- Application Number
- JP2025154140
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2020-06-03
- Filing Date
- 2025-09-17
- Publication Date
- 2026-01-14
AI Technical Summary
Existing waveguide combiners in augmented reality devices face challenges in controlling the diffraction efficiency and directivity of outcoupled light, which affects the overlay of virtual images on the surrounding environment.
A waveguide combiner design featuring a first grating with a decreasing fill factor encapsulant and asymmetric structures, combined with a method of encapsulation that controls the diffraction efficiency and directivity through a gradient encapsulant profile.
The solution enables precise control of diffraction efficiency and maintains directionality across the entire surface of the grating, allowing for full-range tuning without reducing grating depth, enhancing the overlay of virtual images in augmented reality devices.
Smart Images
Figure 2026004346000001_ABST
Abstract
Description
[Technical Field]
[0001]
[0001] Embodiments of the present disclosure relate generally to augmented reality waveguides. More specifically, embodiments described herein relate to gradient encapsulation of waveguide outcoupler gratings for diffraction efficiency and directivity control. [Background technology]
[0002]
[0002] Virtual reality is generally considered to be a computer-generated simulated environment in which a user has an apparent physical presence. Virtual reality experiences are generated in 3D and can be viewed using a head-mounted display (HMD), such as glasses or other wearable display devices with near-eye display panels as lenses, to display a virtual reality environment that replaces the real environment.
[0003]
[0003] However, augmented reality enables an experience in which a user can still see the surrounding environment through the display lenses of glasses or other HMD devices and can also see images of virtual objects that are generated for the display and appear as part of the environment. Augmented reality can include any type of input, such as audio and haptic input, as well as virtual images, graphics, and video that enhance or augment the environment the user experiences. As a state-of-the-art technology, augmented reality presents many challenges and design constraints.
[0004]
[0004] One of the above challenges is displaying a virtual image overlaid on a surrounding environment. To support the image overlay, an extended waveguide combiner is used. Generated light is incoupled into the extended waveguide combiner, propagates through the extended waveguide combiner, and outcoupled from the extended waveguide combiner to be overlaid on the surrounding environment. Light is coupled into and out of the extended waveguide combiner using a surface relief grating. The diffraction efficiency and directionality of the outcoupled light may not be well controlled.
[0005] Therefore, what is needed in the art is an improved waveguide combiner and method of manufacture. Summary of the Invention
[0006] In one embodiment, a device is provided, the device including a first grating formed over a substrate, the first grating having a plurality of first structures extending in a direction away from the substrate, the first grating corresponding to an outcoupler, and a first encapsulant disposed in one or more gaps formed between adjacent first structures, the fill factor of the first encapsulant decreasing along the first grating.
[0007] In another embodiment, a device is provided. The device includes a first grating formed on a substrate, the first grating having a plurality of first structures extending in a direction away from the substrate, the first grating corresponding to an out-coupler. The device includes a first encapsulant disposed in one or more first gaps formed between adjacent first structures, the fill factor of the first encapsulant decreasing along the first grating. The device includes a second grating formed on the substrate, the second grating having a plurality of second structures extending in a direction away from the substrate, the second grating corresponding to an in-coupler.
[0008] In yet another embodiment, a method is provided. The method includes forming a first grating over a substrate, the first grating having a plurality of first structures extending in a direction away from the substrate, the first grating corresponding to an out-coupler. The method includes forming a second grating over the substrate, the second grating having a plurality of second structures extending in a direction away from the substrate, the second grating corresponding to an in-coupler. The method includes depositing a first encapsulant over the first and second gratings, curing the first encapsulant, and forming a patterned photoresist layer over the first and second gratings. The method also includes etching the first encapsulant through the patterned photoresist layer, where a fill factor of the first encapsulant decreases along the first grating, and depositing a blanket encapsulant over the first and second gratings.
[0009]
[0009] In order that the above-described features of the present disclosure may be understood in detail, the above-summarized disclosure will be more particularly described by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings merely illustrate typical embodiments and therefore should not be considered as limiting the scope of the present disclosure, which may also admit of other equally effective embodiments. [Brief explanation of the drawings]
[0010] [Figure 1A] FIG. 2 is a perspective front view of a waveguide combiner according to an embodiment. [Figure 1B] 1B is a schematic cross-sectional view taken along line AA' of FIG. 1A showing a waveguide combiner according to an embodiment. [Figure 1C] 1B is a schematic cross-sectional view taken along line AA' of FIG. 1A illustrating a waveguide combiner according to another embodiment. [Figure 1D] 1B is a schematic cross-sectional view taken along line AA' of FIG. 1A illustrating a waveguide combiner according to yet another embodiment. [Figure 2]FIG. 2 is a flow diagram illustrating steps of a method for encapsulating a waveguide grating according to an embodiment. [Figure 3A-3C] 1A-1C are schematic cross-sectional views of a waveguide combiner during fabrication according to an embodiment. [Figure 3D-3F] 1A-1C are schematic cross-sectional views of a waveguide combiner during fabrication according to an embodiment. [Figure 3G-3J] 1A-1C are schematic cross-sectional views of a waveguide combiner during fabrication according to an embodiment. [Figure 4] FIG. 10 is a flow diagram illustrating steps of a method for encapsulating a waveguide grating according to another embodiment. [Figures 5A-5D] 10 is a schematic cross-sectional view of a waveguide combiner during fabrication according to another embodiment. [Figures 5E-5H] 10 is a schematic cross-sectional view of a waveguide combiner during fabrication according to another embodiment. [Figure 6] FIG. 10 is a flow diagram illustrating steps in a method for encapsulating a waveguide grating according to yet another embodiment. [Figure 7A-7C] 10 is a schematic cross-sectional view of a waveguide combiner during fabrication according to yet another embodiment. [Figures 7D-7F] 10 is a schematic cross-sectional view of a waveguide combiner during fabrication according to yet another embodiment. [Figures 7G-7H] 10 is a schematic cross-sectional view of a waveguide combiner during fabrication according to yet another embodiment. [Figures 7I-7J] 10 is a schematic cross-sectional view of a waveguide combiner during fabrication according to yet another embodiment. DETAILED DESCRIPTION OF THE INVENTION
[0011]
[0020] To facilitate understanding, wherever possible, the same reference numerals have been used to designate identical elements common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
[0012]
[0021] Embodiments described herein relate to a gradient encapsulation of a waveguide outcoupler grating for controlling diffraction efficiency and directivity. The device includes a first grating formed on a substrate, the first grating having a plurality of first structures extending in a direction away from the substrate, the first grating corresponding to the outcoupler. The device includes a first encapsulant disposed in one or more gaps formed between adjacent first structures, the fill factor of the first encapsulant decreasing along the first grating. Also described herein are methods for fabricating the device.
[0013]
[0022] FIG. 1A illustrates a perspective front view of an exemplary waveguide combiner 100 (e.g., for augmented reality (AR) applications). While the waveguide combiner 100 described below is an exemplary waveguide combiner that may be formed using the systems and methods described herein, it should be understood that the systems and methods of the present disclosure may be used to form or modify other optical and nanostructure optical devices, such as other waveguide combiners. For example, optical devices having more than three gratings, e.g., five or more gratings, may be formed. Alternatively, optical devices having fewer than three gratings, such as two gratings, may be formed. In another embodiment, optical devices having gratings on both major surfaces may be formed. In yet another embodiment, optical devices having two or more input couplers and two or more output couplers may be formed.
[0014]
[0023] The waveguide combiner 100 includes a first grating 110 corresponding to the in-coupler, a second grating 120 corresponding to the out-coupler, and a third grating 130 between the in-coupler and the out-coupler. In some embodiments, the waveguide combiner 100 may include one or more additional gratings, where the third grating 130 is an intermediate grating for expanding light between the first and second gratings 110, 120. It should be understood that the third grating 130 may be optional. In some embodiments, the first, second, and third gratings 110, 120, 130 are arranged to achieve substantial total internal reflection of light between the in-coupler and the out-coupler.
[0015]
[0024] FIG. 1B is a schematic cross-sectional view taken along line A-A' in FIG. 1A, illustrating a waveguide combiner 100B according to an embodiment. The waveguide combiner 100B includes a substrate 102. The substrate 102 can be formed from any suitable material and have any suitable thickness, provided that the substrate 102 is sufficiently transparent to light of a desired wavelength or range of wavelengths and can serve as a suitable support for the grating(s). In some embodiments, the material of the substrate 102 includes, but is not limited to, one or more of silicon (Si), silicon dioxide (SiO), silicon carbide (SiC), glass, plastic, polycarbonate, and sapphire-containing materials. In some embodiments, the substrate 102 includes a doped glass. For example, the substrate 102 includes a glass doped with a heavy dopant, such as lanthanum (La), zirconium (Zr), or zinc (Zn). The material of the substrate 102 can also have rollable and flexible properties. In some embodiments, the material of the substrate 102 includes, but is not limited to, a material having a refractive index of about 1.5 to about 2.4. For example, the substrate 102 may be a doped high-index substrate having a refractive index of about 1.7 to about 2.4.
[0016]
[0025] The waveguide combiner 100B includes a first grating 110 and a second grating 120 disposed on a substrate 102. In some embodiments, the first and second gratings 110, 120 may be disposed on one or more spacer layers (not shown) disposed on the substrate 102. In embodiments including a spacer layer, the spacer layer is operable to provide support for the first and second gratings 110, 120 and is of a thickness and material depending on the desired optical properties of the first and second gratings 110, 120. The first grating 110 includes a plurality of structures 112 extending above the substrate 102 and having gaps 114 formed between adjacent structures 112. Similarly, the second grating 120 includes a plurality of structures 122 extending above the substrate 102 and having gaps 124 formed between sidewalls 126 of adjacent structures 122. In some embodiments, the structures 112, 122 may be fins. In some embodiments, the structures 112, 122 may be disposed on the substrate 102. In other words, the substrate 102 may be etched to form the structures 112, 122 disposed thereon.
[0017]
[0026] In some embodiments, structures 112, 122 may be asymmetric (e.g., tilted or wedge-shaped), where structure 112 is tilted in the opposite direction from structure 122. In some other embodiments, structures 112, 122 may be tilted in the same direction, where structure 112 is tilted to the left while structure 122 is tilted to the right. However, the orientation of structures 112, 122 is not particularly limited to the illustrated embodiment. For example, structures 112, 122 may be tilted in the opposite direction relative to the illustrated embodiment.
[0018]
[0027] Here, the structures 122 are tilted at an angle θ1 with respect to the surface normal 106, and the tilt angle θ1 of each structure 122 is substantially the same. In another embodiment, the tilt angle θ1 of one structure 122 may be different from the tilt angle θ1 of the other structures 122. In some embodiments, the tilt angle θ1 may be from about 30 degrees to about 60 degrees, e.g., from about 40 degrees to about 60 degrees, or from about 30 degrees to about 40 degrees, or from about 40 degrees to about 50 degrees, or from about 50 degrees to about 60 degrees, e.g., about 50 degrees. In some embodiments, the tilt angle θ1 may be from about 0 degrees to about 30 degrees, e.g., from about 0 degrees to about 10 degrees, or from about 10 degrees to about 20 degrees, or from about 20 degrees to about 30 degrees. In some embodiments, the structures 122 may have a tilt angle θ1 equal to zero with respect to the surface normal 106, and thus the structures 122 may be binary structures. Here, each structure 122 has a single portion. In other embodiments, the structures 122 may have two or more portions with different tilt angles relative to the surface normal 106. In some embodiments, the material of the structures 122 is selected based on the desired depth and tilt angle θ1 of the structures 122.
[0019]
[0028] The gaps 124 have a depth D1, defined as the distance from the surface 104 of the substrate 102 to the top surface 128 of the structures 122, and a width W1, defined as the distance between the sidewalls 126 of adjacent structures 122, where the depth D1 of each gap 124 is substantially the same. In another embodiment, the depth D1 of at least one gap 124 may be different from the depth D1 of the other gaps 124, where the width W1 of each gap 124 is substantially the same. In another embodiment, the width W1 of at least one gap 124 may be different from the width W1 of the other gaps 124.
[0020]
[0029] In some embodiments, one or more of the structures 112, 122 may include structures having different geometries, such as tilt angles or dimensions, that differ from other structures in the grid. Additionally, the tilt angle of a discreet structure within the plurality of structures 112, 122 may vary across the length or width of the grid.
[0021]
[0030] The first and second gratings 110, 120 are independently made of silicon oxycarbide (SiOC), titanium dioxide (TiO x ), TiO x Nanomaterials, Niobium Oxide (NbO x ), niobium-germanium (Nb3Ge), silicon dioxide (SiO2), silicon oxycarbonitride (SiOCN), vanadium(IV) oxide (VOx), aluminum oxide (Al2O3), indium tin oxide (ITO), zinc oxide (ZnO), tantalum pentoxide (Ta2O5), silicon nitride (Si3N4), Si3N4 silicon-rich, Si3N4 hydrogen-doped, Si3N4 boron-doped, silicon carbon nitride (SiCN), titanium nitride (TiN), zirconium dioxide (ZrO2), germanium (Ge), gallium phosphide (GaP), polycrystalline diamond (PCD), nanocrystalline diamond (NCD), and doped diamond-containing materials. In some embodiments, the substrate 102 may be formed from any material included in the first and second gratings 110, 120, or vice versa. In some embodiments, the substrate 102 and the first and second gratings 110, 120 may be formed from the same material(s).
[0022]
[0031] The first and second gratings 110, 120 may be formed on the surface of the substrate 102 by any suitable process. For example, the first and second gratings 110, 120 may be formed by one or more of physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), flowable chemical vapor deposition (FCVD), atomic layer deposition (ALD), and a spin-on process.
[0023]
[0032] In some embodiments, the material of the first and second gratings 110, 120 may have a refractive index of about 1.5 to about 2.65, such as about 1.5 to about 1.8, alternatively about 2.2 to about 2.65, alternatively about 1.8 to about 2.2, alternatively about 1.8 to about 2, alternatively about 2 to about 2.2, alternatively about 1.9 to about 2.1, such as about 1.9 to about 2, alternatively about 2 to about 2.1, e.g., about 2.
[0024]
[0033] In some embodiments, the waveguide combiner 100B may include a grating material layer (not shown) disposed between the substrate 102 and the structures 112, 122 of the first and second gratings 110, 120. The grating material layer may be formed of any suitable material and by any suitable process, including the materials and processes used to form the first and second gratings 110, 120 described above.
[0025]
[0034] Waveguide combiner 100B includes a first encapsulant 140 disposed in gap 124 between structures 122. In some embodiments, first encapsulant 140 can have an index contrast of about 0.2 or less, e.g., from about 0 to about 0.2, e.g., from about 0 to about 0.05, alternatively from about 0.05 to about 0.1, alternatively from about 0.1 to about 0.15, alternatively from about 0.15 to about 0.2, alternatively about 0.1 or less, where index contrast is defined as the difference in refractive index between first encapsulant 140 and second grating 120.
[0026]
[0035] In some embodiments, the first encapsulant 140 has a viscosity of from about 1.6 to about 2.4, such as from about 1.7 to about 2.3, for example from about 1.8 to about 2.2, for example from about 1.8 to about 2, such as from about 1.9 to about 2, for example from about 1.95 to about 2, or from about 2 to about 2.2, for example from about 2 to about 2.1, for example from about 2 to about 2.05, or from about 1.8 to about 1.85, or from about 1.85 to about 1.9, or from about 1.9 to about 1.95, or from about 1.95 to about 1.96, or Alternatively, the refractive index may be from about 1.96 to about 1.97, alternatively from about 1.97 to about 1.98, alternatively from about 1.98 to about 1.99, alternatively from about 1.99 to about 2, alternatively from about 2 to about 2.01, alternatively from about 2.01 to about 2.02, alternatively from about 2.02 to about 2.03, alternatively from about 2.03 to about 2.04, alternatively from about 2.04 to about 2.05, alternatively from about 2.05 to about 2.1, alternatively from about 2.1 to about 2.2, alternatively from about 1.95 to about 2.05.
[0027]
[0036] In some embodiments, the first encapsulant 140 is a polyimide, a polyimide blend, a metal organic polyimide blend, a metal oxide, a metal nitride, Al2O3, SiO2, TiO, TaO, AlN, SiN, SiO x N x , TiN, TaN, any of the materials forming the substrate 102, any of the materials forming the first and second gratings 110, 120, and any other suitable material having a refractive index according to the ranges set forth above. In some embodiments, the first encapsulant 140 comprises any material with suitable gap-filling properties and a refractive index of about 1.8 to about 2.2.
[0028]
[0037] The first encapsulant 140 has a height H1, defined as the distance from the surface 104 of the substrate 102 to the top surface 142 of the encapsulant 140. The first encapsulant 140 has a fill ratio, defined as the ratio of the height H1 of the encapsulant 140 to the depth D1 of the second grating 120, where the fill ratio decreases linearly from about 1 to about 0 from left to right along the second grating 120. However, the profile of the first encapsulant 140 is not particularly limited to the illustrated embodiment. For example, in other embodiments, the fill ratio may decrease nonlinearly (e.g., according to a power function, exponential function, or other polynomial function). In some embodiments, the fill ratio may generally decrease, including one or more sections where the fill ratio is constant or even increasing. In some embodiments, the fill ratio may decrease in a stepwise manner (i.e., where each gap 124 has a constant fill ratio that is smaller than the preceding gap 124 and larger than the subsequent gap 124). In some embodiments, the fill ratio may be a combination of any of the above gradients.
[0029]
[0038] In some embodiments, the fill ratio (i.e., when the encapsulant 140 is below the upper surface 128) may have a maximum value of 1 or less, such as from about 0.5 to about 1, for example from about 0.6 to about 1, for example from about 0.7 to about 1, for example from about 0.8 to about 1, for example from about 0.9 to about 1, alternatively from about 0.8 to about 0.9, alternatively from about 0.7 to about 0.8, alternatively from about 0.6 to about 0.7, alternatively from about 0.5 to about 0.6, etc.
[0030]
[0039] In some embodiments, the fill ratio (i.e., when the encapsulant 140 is present along the entire surface 104 of the second grating 120) may have a minimum value greater than 0, such as from about 0 to about 0.5, such as from about 0 to about 0.4, such as from about 0 to about 0.3, such as from about 0 to about 0.2, such as from about 0 to about 0.1, alternatively from about 0.1 to about 0.2, alternatively from about 0.2 to about 0.3, alternatively from about 0.3 to about 0.4, alternatively from about 0.4 to about 0.5.
[0031]
[0040] In some embodiments, the fill ratio may be in the range of from about 0 to about 1, such as from about 0.1 to about 1, for example from about 0.2 to about 1, for example from about 0.3 to about 1, such as from about 0.4 to about 1, for example from about 0.5 to about 1, for example from about 0.6 to about 1, such as from about 0.7 to about 1, for example from about 0.8 to about 1, such as from about 0.9 to about 1, alternatively from about 0 to about 0.9, for example from about 0 to about 0.8, such as from about 0 to about 0.7, for example from about 0 to about 0.6, such as from about 0 to about 0.5, for example from about 0 to about 0.4, for example from about 0 to about 0.3, such as from about 0 to about 0.2, for example from about 0 to about 0.1.
[0032]
[0041] The encapsulant gradient described herein allows for control of the diffraction efficiency along the second grating 120. A low refractive index contrast of the encapsulant 140 (e.g., about 0.2 or less) reduces the diffraction efficiency compared to an unencapsulated grating (i.e., a grating without the encapsulant 140). An unencapsulated grating may have air (i.e., a refractive index of 1) in contact with the surface 104, or may include an all-encompassing encapsulant with a low refractive index (e.g., a refractive index contrast greater than about 0.2). In some embodiments, the diffraction efficiency of the second grating 120 may be about 2.5% or less, alternatively about 1% to about 50%, such as about 1% to about 40%, for example about 1% to about 30%, for example about 1% to about 20%, for example about 1% to about 10%, for example about 1% to about 5%, for example about 1% to about 2.5%, alternatively about 2.5% to about 5%, alternatively about 5% to about 10%, alternatively about 10% to about 20%, alternatively about 20% to about 30%, alternatively about 30% to about 40%, alternatively about 40% to about 50%.
[0033]
[0042] In addition to reducing the diffraction efficiency, the encapsulant gradient described herein controls the diffraction efficiency along the second grating 120. In some embodiments, the diffraction efficiency decreases as the fill factor increases. For example, as illustrated herein, the left end of the second grating 120, having the highest fill factor (i.e., 1), has the lowest diffraction efficiency (i.e., about 1% to about 5%), and the right end of the second grating 120, having the lowest fill factor (i.e., 0), has the highest diffraction efficiency (i.e., about 40% to about 50%). However, the orientation of the second grating 120 is not particularly limited to the illustrated embodiment. For example, the second grating 120 may be oriented such that the fill factor decreases from right to left.
[0034]
[0043] Conventional devices use shallow gratings to reduce diffraction efficiency, but shallow gratings limit directivity. The encapsulant gradient described herein can outcouple light at low efficiency without reducing the grating depth. Thus, the encapsulant gradient described herein may enable full-range tuning of diffraction efficiency while maintaining directionality toward the user across the entire surface of the second grating 120. In one or more embodiments, the aforementioned advantages over conventional devices may be achieved by combining the asymmetric structure 122 with an encapsulant gradient.
[0035]
[0044] Waveguide combiner 100B includes an overall encapsulant 150 over first and second gratings 110, 120 and first encapsulant 140. In some embodiments, the overall encapsulant 150 may have a refractive index lower than the refractive indexes of first and second gratings 110, 120 and first encapsulant 140. In some embodiments, the refractive index of the overall encapsulant 150 may be from about 1 to about 1.7, such as from about 1.2 to about 1.5. In some embodiments, the overall encapsulant 150 may have an absorption coefficient of less than about 0.001.
[0036]
[0045] The overall encapsulant 150 may be formed of any suitable transparent material, including, but not limited to, silica-containing materials and non-silica-containing materials such as polymer-containing materials, e.g., fluoropolymer materials. In some embodiments, the overall encapsulant 150 may be formed of a low-k dielectric film, such as silicon dioxide (SiO2), or carbon- and nitride-doped silicon oxide (SiCON) or silicon carbon nitride (SiCN). In some embodiments, the overall encapsulant 150 may include fluorine-containing materials, such as aluminum fluoride (AlF3) and magnesium fluoride (MgF2).
[0037]
[0046] 1C is a schematic cross-sectional view taken along line A-A' in FIG. 1A showing another embodiment of a waveguide combiner 100C. The waveguide combiner 100C is similar in most respects to the waveguide combiner 100B, and the above description of the waveguide combiner 100B may be incorporated herein without limitation.
[0038]
[0047] In contrast to waveguide combiner 100B, waveguide combiner 100C includes a first encapsulant 140 over first grating 110 in addition to second grating 120. First encapsulant 140 is disposed in gap 114 between sidewalls 116 of adjacent structures 112. Here, first encapsulant 140 over first grating 110 has a planar upper surface 144 that is higher than an upper surface 142 of first encapsulant 140 over second grating 120. In some embodiments, upper surface 144 may be non-planar. In some embodiments, upper surface 144 may be at or below upper surface 142. Here, upper surface 144 is higher than upper surface 118 of structure 112 such that the fill factor of gap 114 is constant and equal to 1. However, the profile of first encapsulant 140 over first grating 110 is not particularly limited to the illustrated embodiment. For example, the fill factor may be less than 1. In the above embodiment, the fill factor may vary along the first grating 110.
[0039]
[0048] The waveguide combiner 100C includes an overarching encapsulant 150, where the overarching encapsulant 150 contacts the top surface 144 of the first encapsulant 140 above the first grating 110.
[0040]
[0049] 1D is a schematic cross-sectional view taken along line A-A' in FIG. 1A showing a waveguide combiner 100D according to yet another embodiment. The waveguide combiner 100D is similar in most respects to the waveguide combiners 100B and / or 100C, and the above descriptions of the waveguide combiners 100B, 100C may be incorporated herein without limitation.
[0041]
[0050] In contrast to waveguide combiners 100B and 100C, waveguide combiner 100D has a double-sided grating, defined as being on opposite planar sides of substrate 102. Here, first grating 110 is disposed on backside 108 of substrate 102, opposite front side 104 on which second grating 120 is disposed. Waveguide combiner 100D includes a second encapsulant 146 over first and second gratings 110, 120 on backside 108. Second encapsulant 146 is disposed in gaps 114 between sidewalls 116 of adjacent structures 112 of first grating 110. Second encapsulant 146 has a surface 148 facing away from backside 108 of substrate 102. The second encapsulant 146 may be the same as or different from the first encapsulant 140, and the above description of the first encapsulant 140 may be incorporated herein without limitation.
[0042]
[0051] Here, the second encapsulant 146 covers the backside 108 over the first and second gratings 110, 120. However, the second encapsulant 146 is not particularly limited to the illustrated embodiment. For example, the second encapsulant 146 may only cover the backside 108 over the first grating 110. In some other embodiments, the second encapsulant 146 may be omitted.
[0043]
[0052] The waveguide combiner 100D includes an overall encapsulant 150 in contact with a surface 148 of the second encapsulant 146 above the first and second gratings 110, 120.
[0044]
[0053] Figure 2 is a flow diagram illustrating steps of a method 200 for encapsulating a waveguide grating according to an embodiment. Figures 3A-3J are schematic cross-sectional views of a waveguide combiner 100B in-process according to an embodiment.
[0045]
[0054] 2 and 3A, in step 202, the method 200 includes forming a first grating 110 corresponding to the in-coupler and a second grating 120 corresponding to the out-coupler. The first and second gratings 110, 120 may be formed using any of the materials and processes described above.
[0046]
[0055] 2 and 3B, in step 204, the method 200 includes depositing a first encapsulant 140 over the first and second gratings 110, 120. The first encapsulant 140 is deposited over the surface 104 of the substrate 102, the gaps 114, 124, the structure 112, and along the sidewalls 126 and top surface 128 of the structure 122. The first encapsulant 140 may be formed by any suitable process. For example, the first encapsulant 140 may be formed by one or more of PVD, CVD, PECVD, FCVD, ALD, and a spin-on process.
[0047]
[0056] 2 and 3B, in step 206, the method 200 includes curing the first encapsulant 140. In some embodiments, the first encapsulant 140 may be cured by heat, pressure, chemical treatment, or any other suitable curing technique.
[0048]
[0057] 2 and 3C, in step 208, the method 200 includes depositing a first hard mask layer 162 over the hardened first encapsulant 140. The first hard mask layer 162 includes at least one of titanium nitride, silicon nitride, and silicon carbide. The first hard mask layer 162 may be formed by any suitable process. For example, the first hard mask layer 162 may be formed by one or more of PVD, CVD, PECVD, FCVD, ALD, and a spin-on process.
[0049]
[0058] 2 and 3D , in step 210, the method 200 includes forming a patterned second hard mask layer 164 on the first hard mask layer 162. The patterned second hard mask layer 164 is disposed on the second grating 120 but not on the first grating 110. Thus, the patterned second hard mask layer 164 can be used as an etch mask for etching the first hard mask layer 162 on the first grating 110. The patterned second hard mask layer 164 includes at least one of a positive or negative photoresist, a metal-containing hard mask, a carbon-containing hard mask, an organic planarization layer (OPL), and other suitable hard mask materials. The patterned second hard mask layer 164 can be formed by any suitable process. For example, the patterned second hard mask layer 164 may be formed by one or more of PVD, CVD, PECVD, FCVD, ALD, and spin-on processes.
[0050]
[0059] 2 and 3E, in step 212, the method 200 includes removing the first hard mask layer 162 over the first grating 110. The first hard mask layer 162 may be removed by an etching process having etching selectivity of the first hard mask layer 162 relative to the patterned second hard mask layer 164. Thus, the first hard mask layer 162 may be removed from over the first grating 110 without affecting the patterned second hard mask layer 164 and / or the first hard mask layer 162 over the second grating 120. The etching process may include at least one of wet etching, dry etching, reactive ion etching, and plasma etching.
[0051]
[0060] 2 and 3F, in step 214, the method 200 includes etching the first encapsulant 140 over the first grating 110. The first hard mask layer 162 over the second grating 120 may be used as an etch mask to etch the first encapsulant 140 over the first grating 110. The first encapsulant 140 may be removed by an etching process having etch selectivity of the first encapsulant 140 to either the patterned second hard mask layer 164 or the first hard mask layer 162. Thus, the first encapsulant 140 may be removed from over the first grating 110 without affecting the first encapsulant 140 over the second grating 120. The etching process may include at least one of wet etching, dry etching, reactive ion etching, and plasma etching.
[0052]
[0061] 2 and 3G, in step 216, the method 200 includes removing the first hard mask layer 162 over the second grating 120. The first hard mask layer 162 may be removed from over the second grating 120 to prepare the encapsulant 140 over the second grating 120 for a subsequent etching step. The first hard mask layer 162 may be removed by at least one of stripping, wet etching, dry etching, reactive ion etching, and plasma etching.
[0053]
[0062] 2 and 3H, in step 218, the method 200 includes forming a patterned photoresist layer 166 over the first and second gratings 110, 120. In some embodiments, the patterned photoresist layer 166 may be formed by any suitable lithography process (e.g., a grayscale lithography process using a scanning graytone exposure with increasing dose while scanning across the waveguide combiner 100B from the first grating 110 to the second grating 120). The grayscale lithography process may include blanket depositing a photoresist material over the first and second gratings 110, 120, where the photoresist material contacts the first grating 110 and the first encapsulant 140 over the second grating 120. In some embodiments, the photoresist material may include, but is not limited to, a photosensitive polymer-containing material.
[0054]
[0063] Thereafter, exposing the photoresist material may include forming a latent image pattern therein using a gradient of exposure dose along the photoresist material. In some embodiments, the latent pattern may include, but is not limited to, any one-, two-, or three-dimensional shape created in the photoresist material using lithography or laser ablation. In some embodiments, the latent image pattern may be sloped. The shape of the latent image pattern may determine the profile of the first encapsulant 140. After forming the latent image pattern, the photoresist material may be developed to form the patterned photoresist layer 166 shown in FIG. 3H. The photoresist material may be a positive photoresist, in which exposed areas of the photoresist material are removed during development. In some embodiments, developing the photoresist material may include performing a lithography process, such as photolithography, digital lithography, or performing laser ablation.
[0055]
[0064] Here, the patterned photoresist layer 166 has a thickness T1 measured above the first encapsulant 140 that decreases linearly along the first and second gratings 110, 120. However, the profile of the patterned photoresist layer 166 is not particularly limited to the illustrated embodiment. For example, the profile may decrease nonlinearly (e.g., according to a power function, exponential function, or other polynomial function), the profile may be generally decreasing while including one or more sections where the profile is constant or even increasing, the profile may decrease in steps, or the profile may be any combination of the above profiles. The profile of the patterned photoresist layer 166 may be transferred to the first encapsulant 140 during subsequent etching.
[0056]
[0065] 2 and 3I, in step 220, the method 200 includes etching the patterned photoresist layer 166 and the first encapsulant 140. Here, the etching process exposes a portion of the sidewall 126 and the top surface 128 of the structure 122. The etching process may include any suitable directional or non-directional etching process. In some embodiments, the profile of the patterned photoresist layer 166 may be transferred to the first encapsulant 140 by an isotropic etching process. The isotropic etching process may have etch selectivity of the patterned photoresist layer 166 and the first encapsulant 140 relative to the structure 122 such that the first encapsulant 140 may be etched without affecting the underlying structure 122. Here, the patterned photoresist layer 166 and the first encapsulant 140 are removed at substantially the same rate such that the profile of the etched first encapsulant 140 substantially matches the profile of the patterned photoresist layer 166. In some other embodiments, the profile of the etched first encapsulant 140 may differ from the profile of the patterned photoresist layer 166 due to differences in etch rates or etch selectivities.
[0057]
[0066] In some embodiments, the directional etch may be used with or without a gradient formed in the patterned photoresist layer 166. In some embodiments, the top surface 142 of the etched first encapsulant 140 may be perpendicular to the sidewalls 126 of the structures 122. In some embodiments, the etching process may form a gradual decrease in the etched first encapsulant 140 such that the top surfaces 142 between adjacent structures 122 are substantially parallel to the surface 104 of the substrate 102.
[0058]
[0067] In some embodiments, the etching process may include a cyclic etching process using one or more proximity masks. In some embodiments, the etching may be uniform. In some other embodiments, the etching may be selective. In some embodiments, a single etching chemistry may be used. In some other embodiments, two or more different etching chemistries may be used.
[0059]
[0068] 2 and 3J, in step 222, the method 200 includes depositing an overall encapsulant 150 over the first and second gratings 110, 120. The overall encapsulant 150 is deposited over the surface 104 of the substrate 102, the gap 114, the structure 112, the etched first encapsulant 140, and along the exposed sidewalls 126 and top surface 128 of the structure 122. The overall encapsulant 150 may be formed by any suitable process. For example, the overall encapsulant 150 may be formed by one or more of PVD, CVD, PECVD, FCVD, ALD, and a spin-on process.
[0060]
[0069] Figure 4 is a flow diagram illustrating steps of a method 400 for encapsulating a waveguide grating according to an embodiment. Figures 5A-5H are schematic cross-sectional views of a waveguide combiner 100C in-process according to an embodiment.
[0061]
[0070] 4 and 5A, in step 402, the method 400 includes forming a first grating 110 corresponding to the in-coupler and forming a second grating 120 corresponding to the out-coupler. With reference to FIGS. 4 and 5B, in step 404, the method 400 includes depositing a first encapsulant 140 over the first and second gratings 110, 120. With reference to FIGS. 4 and 5B, in step 406, the method 400 includes curing the first encapsulant 140. With reference to FIGS. 4 and 5C, in step 408, the method 400 includes depositing a first hard mask layer 172 over the cured first encapsulant 140. Steps 402 to 408 are similar to steps 202 to 208 of the method 200.
[0062]
[0071] 4 and 5D , in step 410, method 400 includes forming a patterned second hard mask layer 174 over the first hard mask layer 172. Step 410 is similar to step 210 of method 200, except that the patterned second hard mask layer 174 is disposed over the first grating 110, but not over the second grating 120. Thus, the patterned second hard mask layer 174 can be used as an etch mask to etch the first hard mask layer 172 over the second grating 120.
[0063]
[0072] 4 and 5E, in step 412, method 400 includes removing the first hard mask layer 172 over the second grating 120. Step 412 is similar to step 216 of method 200, except that the first hard mask layer 172 remains disposed over the first grating 110.
[0064]
[0073] 4 and 5F, in step 414, method 400 includes forming a patterned photoresist layer 176 over the first and second gratings 110, 120. Step 414 is similar to step 218 of method 200, except that the photoresist material contacts the first hard mask layer 172 over the first grating 110 and the first encapsulant 140 over the second grating 120. After forming the latent image pattern, the photoresist material may be developed to form the patterned photoresist layer 176 shown in FIG.
[0065]
[0074] 4 and 5G, in step 416, method 400 includes etching the patterned photoresist layer 176 and the first encapsulant 140. Step 416 is similar to step 220 of method 200, except that the first hard mask layer 172 remaining on the first grating 110 is used as an etch mask to etch the first encapsulant 140 on the second grating 120 without affecting the first encapsulant 140 on the first grating 110.
[0066]
[0075] 4 and 5H, in step 418, method 400 includes depositing an overlying encapsulant 150 over the first and second gratings 110, 120. Step 418 is similar to step 222 of method 200, except that the overlying encapsulant 150 is disposed on the top surface 144 of the first encapsulant 140 over the first grating 110.
[0067]
[0076] Figure 6 is a flow diagram illustrating steps in a method 600 for encapsulating a waveguide grating according to an embodiment. Figures 7A-7J are schematic cross-sectional views of a waveguide combiner 100D in-process according to an embodiment.
[0068]
[0077] 6 and 7A, in step 602, method 600 includes forming a first grating 110 corresponding to an in-coupler on the backside 108 of the substrate 102 and forming a second grating 120 corresponding to an out-coupler on the front side 104 facing opposite the backside 108 of the substrate 102. Step 602 is similar to step 202 of method 200, except that the first grating 110 is formed on the backside 108 of the substrate 102.
[0069]
[0078] 6 and 7B, in step 604, method 600 includes depositing a first encapsulant 140 on the front side 104. Step 604 is similar to step 204 of method 200, except that the first encapsulant 140 is deposited over the surface 104 of the substrate 102, in the gap 124, and along the sidewalls 126 and top surface 128 of the structure 122.
[0070]
[0079] 6 and 7B, in step 606, the method 600 optionally includes depositing a second encapsulant 146 on the backside 108. The second encapsulant 146 is deposited over the backside surface 108 of the substrate 102, over the gap 114, and over the structure 112. The second encapsulant 146 has a surface 148 that faces away from the backside 108 of the substrate 102. The second encapsulant 146 may be formed by any suitable process. For example, the second encapsulant 146 may be formed by one or more of PVD, CVD, PECVD, FCVD, ALD, and a spin-on process.
[0071]
[0080] 6 and 7B, in step 608, method 600 includes curing first encapsulant 140 and optional second encapsulant 146. Step 608 is similar to step 206 of method 200, except that the curing process may be applied to the front side 104 and back side 108 of substrate 102.
[0072]
[0081] 6 and 7C, in step 610, the method 600 includes depositing a first hard mask layer 182 over the hardened first encapsulant 140 on the front side 104. With reference to FIGS. 6 and 7D, in step 612, the method 600 includes forming a patterned second hard mask layer 184 over the first hard mask layer 182 on the front side 104. With reference to FIGS. 6 and 7E, in step 614, the method 600 includes removing the first hard mask layer 182 over the first grating 110 on the front side 104. With reference to FIGS. 6 and 7F, in step 616, the method 600 includes etching the first encapsulant 140 over the first grating 110 on the front side 104. 6 and 7G, in step 618, the method 600 includes removing the first hard mask layer 182 over the second grating 120 on the front side 104. Referring to FIGS. 6 and 7H, in step 620, the method 600 includes forming a patterned photoresist layer 186 over the first and second gratings 110, 120 on the front side 104. Referring to FIGS. 6 and 7I, in step 622, the method 600 includes etching the patterned photoresist layer 186 and the first encapsulant 140 on the front side 104. Steps 610 through 622 are similar to steps 208 through 220 of the method 200, except that the waveguide combiner 100D has the first grating 110 on the back side 108.
[0073]
[0082] 6 and 7J, in step 624, method 600 includes depositing an encapsulant 150 over the first and second gratings 110, 120 on the front side 104 and back side 108. Step 624 is similar to step 222 of method 200, except that the encapsulant 150 is disposed over the front side 104 and back side 108. The encapsulant 150 is disposed on a surface 148 of the second encapsulant 146 over the first and second gratings 110, 120.
[0074]
[0083] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, as determined by the following claims.
Claims
1. A device, a first grating formed on a substrate, the first grating having a plurality of first structures extending in a direction away from the substrate and corresponding to the outcoupler; a first encapsulant disposed in one or more gaps formed between adjacent first structures, the fill ratio of the first encapsulant decreasing along the first grid; 1. A device comprising:
2. The device of claim 1 , wherein the first encapsulant has a refractive index contrast with the first grating of about 0.2 or less.
3. The device of claim 1 , wherein the first encapsulant has a refractive index of about 1.8 to about 2.
2.
4. The device of claim 1 , wherein the first encapsulant comprises one or more of a polyimide, a polyimide blend, or a metal-organic polyimide blend.
5. The device of claim 1 , wherein the fill ratio of the first encapsulant ranges from about 0 to about 1.
6. The device of claim 1 , wherein the fill ratio decreases linearly.
7. The device of claim 1 , wherein the fill ratio decreases in steps.
8. The device of claim 1 , wherein the fill factor decreases non-linearly.
9. 10. The device of claim 1, further comprising a second grating formed on the substrate, the second grating having a plurality of second structures extending in a direction away from the substrate, the second grating corresponding to an inter-coupler.
10. A device, a first grating formed on a substrate, the first grating having a plurality of first structures extending in a direction away from the substrate and corresponding to the outcoupler; a first encapsulant disposed in one or more first gaps formed between adjacent first structures, the fill ratio of the first encapsulant decreasing along the first grid; a second grating formed on the substrate, the second grating having a plurality of second structures extending in a direction away from the substrate and corresponding to an in-coupler; 1. A device comprising:
11. The device of claim 10 , wherein the first encapsulant is disposed in one or more second gaps formed between adjacent second structures.
12. The device of claim 10 , wherein the first and second gratings are formed on a front side of the substrate.
13. The device of claim 10 , wherein the first grating is formed on a front side of the substrate and the second grating is formed on a back side of the substrate facing opposite the front side.
14. 14. The device of claim 13, further comprising a second encapsulant disposed on a backside of the substrate, the second encapsulant disposed in one or more second gaps formed between adjacent second structures.
15. 1. A method comprising: forming a first grating on a substrate, the first grating having a plurality of first structures extending in a direction away from the substrate, the first grating corresponding to an out-coupler; forming a second grating on the substrate, the second grating having a plurality of second structures extending in a direction away from the substrate, the second grating corresponding to an in-coupler; depositing a first encapsulant material over the first and second gratings; curing the first encapsulant; forming a patterned photoresist layer over the first and second gratings; etching the first encapsulant through the patterned photoresist layer, wherein a fill factor of the first encapsulant decreases along the first grating; depositing a blanket encapsulant over the first and second gratings; A method comprising:
16. depositing a first hard mask layer over the cured first encapsulant; forming a patterned second hard mask layer over the first hard mask layer; 16. The method of claim 15, further comprising:
17. removing the first hard mask layer over the first grating; etching the first encapsulant over the first grating using one of the patterned second hard mask layer or the first hard mask layer as an etch mask; 17. The method of claim 16, further comprising:
18. 16. The method of claim 15, wherein forming the patterned photoresist layer comprises performing a grayscale lithography process.
19. 16. The method of claim 15, wherein etching the first encapsulant through the patterned photoresist layer comprises transferring a profile of the patterned photoresist layer into the first encapsulant.
20. 16. The method of claim 15, wherein the first grating is formed on a front side of the substrate, the first encapsulant is deposited on the front side, the second grating is formed on a back side of the substrate facing opposite the front side, and the method further comprises depositing a second encapsulant on the back side.