Grinding composition

Abstract

To provide polishing compositions and methods that enable barrier polishing, improving the flatness of patterned substrates containing copper, tantalum, and TEOS. [Solution] The present invention provides an abrasive composition comprising: an abrasive having an average particle size (MPS) of 100 nm to 150 nm; a phosphate surfactant; an electronic conductivity (EC) control agent; an organic acid; and a water-soluble polymer, wherein the ratio of the concentration of the abrasive to the concentration of the phosphate surfactant is 50 or more and less than 1040.

Description

[Technical Field]

[0001] This invention relates to an abrasive composition. [Background technology]

[0002] The following explanation of the background of this technology is provided solely to aid in understanding this technology and is not intended to describe or constitute prior art related to this technology.

[0003] One of the main challenges in chemical mechanical polishing (CMP) for semiconductor manufacturing is the selective polishing of materials. Copper (Cu) is widely used as an interconnect material in semiconductor device fabrication, tantalum (Ta) is widely used as a barrier material, and SiO2 derived from tetraethyl orthosilicate (hereinafter, "TEOS") is widely used as a substrate material. Therefore, there is a need for chemical mechanical polishing compositions that minimize the loss of Cu interconnects during the barrier polishing process by achieving adjustable Cu, Ta, and TEOS removal rates and achieving good topographic correction and flatness. The polishing compositions and methods of this disclosure have been developed against this backdrop. [Overview of the project] [Means for solving the problem]

[0004] In one embodiment, which may be combined with any other aspect or embodiment, the present disclosure relates to an abrasive composition comprising: an abrasive having an average particle size (MPS) of 100 nm to 150 nm; a phosphate surfactant; an electronic conductivity (EC) control agent; an organic acid; and a water-soluble polymer, wherein the ratio of the concentration of the abrasive to the concentration of the phosphate surfactant is 50 or more.

[0005] In one embodiment, which may be combined with any other aspect or embodiment, the present disclosure relates to an abrasive composition comprising: an abrasive having an average particle size (MPS) of 100 nm to 150 nm; a phosphate surfactant; an electronic conductivity (EC) control agent; a corrosion inhibitor; an organic acid; and a water-soluble polymer, wherein the ratio of the concentration of the abrasive to the concentration of the phosphate surfactant is 50 or more.

[0006] In some embodiments, the abrasive comprises colloidal silica. In some embodiments, the abrasive has a particle size distribution defined by (D90-D10) / D50 of 0.60 or less. In some embodiments, the abrasive comprises spherical particles. In some embodiments, the abrasive comprises particles having an aspect ratio of 1.1 or less.

[0007] In some embodiments, the polishing composition has a pH of 10.5 or less.

[0008] In some embodiments, the phosphate surfactant comprises a polyoxyethylene alkylphenyl ether phosphate or a polyoxyethylene alkenyl ether phosphate. In some embodiments, the phosphate surfactant comprises a polyoxyethylene alkylphenyl ether phosphate having 4 to 16 oxyethylene units. In some embodiments, the phosphate surfactant comprises at least one selected from the group consisting of: polyoxyethylene(4) nonylphenyl phosphate, polyoxyethylene(7) nonylphenyl phosphate, polyoxyethylene(10) nonylphenyl phosphate, and polyoxyethylene(10) oleyl ether phosphate.

[0009] In some embodiments, the corrosion inhibitor includes an azole compound.

[0010] In some embodiments, the corrosion inhibitor includes at least one selected from the group consisting of: benzotriazole (BTA), 1,2,4-triazole, tetrazole, tritriazole, 4-carboxybenzotriazole, 5-carboxybenzotriazole, mercaptobenzoxazole, 2-mercaptobenzothiazole, 2-mercaptobenzimidazole, and derivatives thereof.

[0011] In some embodiments, the organic acid includes at least one selected from the group consisting of: citric acid, formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, tartaric acid, and lactic acid. In some embodiments, the organic acid includes citric acid.

[0012] In some embodiments, the EC controller includes the same anion as the ion present in the organic acid. In some embodiments, the EC controller includes ammonium citrate.

[0013] C In some embodiments, the water-soluble polymer includes a polysaccharide. In some embodiments, the polysaccharide is pullulan.

[0014] In some embodiments, the polishing composition further includes a base selected from KOH, NaOH, or a combination thereof.

[0015] In some embodiments, the polishing composition includes an oxidizing agent. In some embodiments, the oxidizing agent includes hydrogen peroxide.

[0016] In another embodiment, which may be combined with any other aspect or embodiment, the Disclosure relates to a method for polishing a substrate surface, wherein the substrate surface comprises two or more of Cu, Ta, SiCN, and TEOS, and the method comprises the steps of: bringing the substrate surface into contact with an abrasive composition and a polishing pad of any embodiment disclosed herein; and moving the polishing pad relative to the substrate surface while bringing the abrasive composition into contact with the substrate surface, wherein the A2 / A3 ratio is 0.85 or greater. In some embodiments, the substrate surface comprises Cu and TEOS. In some embodiments, the substrate surface comprises Cu, Ta, SiCN, and TEOS.

[0017] In some embodiments, the polishing step achieves a flatness of 20 or less on the substrate surface, where the flatness is defined by (A3-A2)×(0.5×A1). In some embodiments, the flatness is 10 or less. [Brief explanation of the drawing]

[0018] [Figure 1A] A schematic diagram (not to scale) of a Si wafer having a 3000 Å thermal oxide layer patterned with 1 μm trenches (A) with a 9 μm trench spacing (B), on which a 150 Å tantalum (Ta) barrier layer and a 7000 Å copper (Cu) layer are deposited to reproduce the interconnections. [Figure 1B] Figure 1A is a schematic diagram of the patterned wafer after Cu polishing, retaining the Ta barrier layer throughout the wafer and the patterned Cu interconnects in the trenches. [Figure 1C] Figure 1B is a schematic diagram of the ideal surface topography of the patterned wafer after the barrier layer has been polished. The tops of the Cu and Ta layers are nearly horizontal to the tops of the thermal oxide layers on the unpatterned portion of the wafer. [Figure 1D]Figure 1B is a schematic diagram of the non-ideal surface topography of the patterned wafer after barrier layer polishing, where the upper parts of the Cu and Ta layers are below the upper parts of the thermal oxide layer on the unpatterned portion of the wafer. The amount of erosion is the height difference between the thermal oxide and the Cu or Ta layer. [Figure 1E] Figure 1B is a schematic diagram of the non-ideal surface topography of the patterned wafer after polishing the barrier layer. The upper part of the Ta barrier layer is below the upper part of the thermal oxide layer on the non-patterned portion of the wafer (erosion), and the Cu layer protrudes above the upper part of the Ta barrier layer due to the non-ideal Ta / Cu removal rate selectivity. [Figure 1F] Figure 1B is a schematic diagram of the non-ideal surface topography of the patterned wafer after barrier layer polishing, where the top of the Cu layer (and optionally the top of the Ta layer) is below the top of the thermal oxide layer on the unpatterned and patterned portions of the wafer due to Cu "dishing". [Figure 2] This is a schematic diagram showing the parameters for calculating the flatness of a TEOS / Ta / Cu patterned wafer.

[0019] The following will describe in detail some specific embodiments considered in this disclosure. While various embodiments are described herein, it should be understood that this is not intended to limit the Art to those embodiments described. Rather, it is intended to cover modifications, alterations, and equivalents that may be included within the spirit and scope of the Art, as defined in the appended claims.

[0020] In this specification, "X~Y" is used to mean "greater than or equal to X and less than or equal to Y," including the numerical values ​​(X and Y) before and after it as the lower and upper limits, respectively. When multiple "X~Y" are listed, for example, "X1~Y1, or X2~Y2," the disclosure of each numerical value as the upper limit, the disclosure of each numerical value as the lower limit, and all combinations of these upper and lower limits are disclosed (i.e., they provide a legal basis for corrections). Specifically, corrections to X1 or greater, corrections to Y2 or less, corrections to X1 or less, corrections to Y2 or greater, corrections to X1~X2, corrections to X1~Y2, etc., must all be considered legal. Note that the description "greater than or equal to X" means X or greater than X, and therefore includes the meaning of "greater than X." Similarly, the description "less than or equal to Y" means Y or less than Y, and therefore includes the meaning of "less than Y." In addition, unless otherwise specified, operations and measurements of physical properties, etc., are performed under conditions of room temperature (20~25℃) / relative humidity 40~50%RH. Furthermore, the concentrations described herein may be either the concentration at the point of use (POU) or the concentration before dilution to the POU concentration. The dilution ratio may be 2 to 10 times. In addition, it should be understood that all combinations of embodiments and descriptions disclosed herein are disclosed in this application; that is, they should be understood as grounds for amendment. Also, when the content or concentration of each component is described, if two or more are included, it may refer to their total amount. [Modes for carrying out the invention]

[0021] polishing composition This disclosure relates to an abrasive composition comprising an abrasive; a phosphate surfactant; an electronic conductivity (EC) control agent; an organic acid; and a water-soluble polymer. In one embodiment, which may be combined with any other aspect or embodiment, this disclosure relates to an abrasive composition comprising an abrasive; a phosphate surfactant; an electronic conductivity (EC) control agent; a corrosion inhibitor; an organic acid; and a water-soluble polymer. Abrasive The polishing compositions according to this disclosure comprise abrasive particles (i.e., "abrasive grains") suitable for polishing substrates containing Cu, Ta, and one or more dielectric materials (e.g., BD, SiO2 (e.g., derived from TEOS)). Since the abrasive consists of multiple abrasive particles (abrasive grains), the term abrasive particles (abrasive grains) may be used herein to mean abrasive. In some embodiments, the abrasive particles comprise one or more metal oxide particles, e.g., zirconia, hafnia, alumina, titania, silica, ceria, and any combination thereof. In some embodiments, the abrasive particles comprise colloidal silica, colloidal zirconia, or a combination thereof. In some embodiments, the abrasive particles comprise colloidal silica. Furthermore, the abrasive particles may be commercial products, synthetic products, or any combination thereof. In some embodiments, the abrasive particles have a negative surface charge or negative zeta potential, a positive surface charge or positive zeta potential, or are uncharged (i.e., neutral) at the pH of the polishing composition.

[0022] In some embodiments, the abrasive particles are surface-modified with chemical species that are covalently attached to the particle surface and have terminal anionic groups. In some embodiments, the abrasive particles include colloidal particles that are anionically modified, for example, by immobilizing an organic acid onto the surface of the colloidal particles.

[0023] In some embodiments, the immobilization of organic acids onto the surface of abrasive particles (e.g., colloidal silica) of an abrasive composition can be achieved by chemically bonding the functional groups of the organic acid to the surface of the abrasive particles (e.g., colloidal silica). Immobilization of organic acids onto colloidal silica cannot be achieved simply by allowing colloidal silica and organic acids to be present simultaneously. Immobilization of organic acids (e.g., sulfonic acids) onto colloidal silica can be achieved, for example, by the method described in E. Cano-Serrano et al., Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups, CHEM.COMMUN., pp. 246-47 (2003), which is incorporated entirely herein by reference. Specifically, colloidal silica with sulfonic acid immobilized on its surface can be obtained by coupling a silane coupling agent having thiol groups, such as 3-mercaptopropyltrimethoxysilane ("MPS"), to colloidal silica, and then oxidizing the thiol groups with hydrogen peroxide to form surface-immobilized sulfonic acid (e.g., surface-bonded propanesulfonic acid, e.g., oxidized MPS). Such silica abrasives are non-limiting examples of "sulfonic acid-modified" abrasives. The surface-modified colloidal silica in the examples is this sulfonic acid-modified colloidal silica.

[0024] The immobilization of carboxylic acids onto colloidal silica can be carried out, for example, by the method described in Y. Kazuo et al., Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel, 3 CHEM.LETT., pp. 228-29 (2000), which is incorporated entirely herein by reference. Specifically, colloidal silica with carboxylic acids immobilized on its surface can be obtained by coupling a silane coupling agent containing a photoreactive 2-nitrobenzyl ester to colloidal silica, followed by photoirradiation. Such silica abrasives are non-limiting examples of "carboxylic acid-modified" abrasives.

[0025] These examples of organic acid immobilization on colloidal silica are intended to be illustrative and not limiting. Other organic immobilization techniques using different organic acids and different abrasive particle materials (e.g., those other than colloidal silica) are intended to be included within the scope of this disclosure.

[0026] In some embodiments, the abrasive particles are unmodified (i.e., they do not have chemical species such as organic compounds that are bound to the surface and have charged head groups).

[0027] In some embodiments, the polishing particles are approximately 10 nm or larger, approximately 15 nm or larger, approximately 20 nm or larger, approximately 25 nm or larger, approximately 30 nm or larger, approximately 35 nm or larger, approximately 40 nm or larger, approximately 45 nm or larger, approximately 50 nm or larger, approximately 55 nm or larger, approximately 60 nm or larger, approximately 65 nm or larger, approximately 70 nm or larger, approximately 75 nm or larger, approximately 80 nm or larger, approximately 85 nm or larger, approximately 90 nm or larger, approximately 95 nm or larger, approximately 100 nm or larger, approximately 110 nm or larger, approximately 120 nm or larger, approximately 130 nm or larger, approximately 140 nm or larger, and approximately 15 The average particle size (MPS) of the abrasive particles (abrasives) is 0 nm or greater, approximately 160 nm or greater, approximately 170 nm or greater, approximately 180 nm or greater, approximately 190 nm or greater, approximately 200 nm or greater, approximately 210 nm or greater, approximately 220 nm or greater, approximately 230 nm or greater, approximately 240 nm or greater, approximately 250 nm or greater, approximately 260 nm or greater, approximately 270 nm or greater, approximately 280 nm or greater, approximately 290 nm or greater, approximately 300 nm or greater, or includes any two of these values, and / or has an average particle size (MPS) of any range or value between any two of these values. In this specification, the average particle size (MPS) of the abrasive particles (abrasives) may be a value calculated by using ZETASIZER® (Malvern Panalytical) as shown in the examples. Here, the range may be expressed herein as "approximately" from a certain value and / or "approximately" from another specific value. Where such a range is expressed, another aspect includes from a certain value and / or from another specific value. Similarly, by using the antecedent "about," it will be understood that when a value is expressed as an approximation, a particular value can form a different set of characteristics. Furthermore, it will be understood that each endpoint of a range is important both in relation to and independently of the other endpoint. It will also be understood that there are many values ​​disclosed herein, and each value is disclosed herein not only as the value itself, but also "about" its specific value. For example, if the value "10" is disclosed, "about 10" is also disclosed. It will also be understood that each component between two specific components is also disclosed. For example, if 10 and 15 are disclosed, 11, 12, 13, and 14 are also disclosed. In this specification, about X (where X is a number) may mean that it further includes ±10% or ±5% of X, and taking ±10% as an example, it means X × 0.9 to X × 1.1.Also, "approximately X" can be X itself.

[0028] In some embodiments, the polishing particles are approximately 300 nm or less, approximately 290 nm or less, approximately 280 nm or less, approximately 270 nm or less, approximately 260 nm or less, approximately 250 nm or less, approximately 240 nm or less, approximately 230 nm or less, approximately 220 nm or less, approximately 210 nm or less, approximately 200 nm or less, approximately 190 nm or less, approximately 180 nm or less, approximately 170 nm or less, approximately 160 nm or less, approximately 150 nm or less, approximately 140 nm or less, approximately 130 nm or less, approximately 120 nm or less, approximately 110 nm or less, approximately 100 nm or less, and approximately 95 The average particle size (MPS) includes any two of the following values: less than or equal to nm, approximately 90 nm or less, approximately 85 nm or less, approximately 80 nm or less, approximately 75 nm or less, approximately 70 nm or less, approximately 65 nm or less, approximately 60 nm or less, approximately 55 nm or less, approximately 50 nm or less, approximately 45 nm or less, approximately 40 nm or less, approximately 35 nm or less, approximately 30 nm or less, approximately 25 nm or less, approximately 20 nm or less, approximately 15 nm or less, approximately 10 nm or less, and / or any range or values ​​between any two of these values.

[0029] In some embodiments, the abrasive particles have an average particle size (MPS) of any range or value between any two of the following values: approximately 10 nm to approximately 300 nm, approximately 20 nm to approximately 250 nm, approximately 30 nm to approximately 200 nm, approximately 50 nm to approximately 200 nm, approximately 70 nm to approximately 180 nm, approximately 80 nm to approximately 170 nm, approximately 90 nm to approximately 160 nm, approximately 100 nm to approximately 150 nm, approximately 110 nm to approximately 130 nm, or any two of these values. In some embodiments, the abrasive particles (abrasive) have an average particle size (MPS) of any range or value between any two of these values: approximately 115 nm to approximately 125 nm, or any two of these values, or any two of these values.

[0030] The terms “D10,” “D50,” and “D90” refer to parameters of the particle size distribution of abrasive particles (or abrasive grains) disclosed herein. As used herein, the term “D10” refers to the particle size (e.g., diameter) of the 10% cumulative count from the minimum particle size in the particle size distribution histogram. That is, D10 is the particle size where 10% of the particles in the particle size distribution have a smaller size and 90% have a larger size. Similarly, as used herein, the term “D50” refers to the particle size (e.g., diameter) of the 50% cumulative count from the minimum particle size in the particle size distribution histogram. That is, D50 is the particle size where 50% of the particles in the particle size distribution have a smaller size and 50% have a larger size. Similarly, “D90” refers to the particle size (e.g., diameter) of the 90% cumulative count from the minimum particle size in the particle size distribution histogram. In other words, D90 is a particle size distribution in which 90% of particles are smaller and 10% are larger. "D10", "D50", and "D90" can all be measured using the Malvern Panalytic Zeta Sizer Nano Light Scattering System.

[0031] In some embodiments, the abrasive particles have a narrow particle size distribution suitable for improving the flatness and topographic correction of the object being polished using the abrasive composition. In some embodiments, the particle size distribution is given by the following equation 1:

[0032]

number

[0033] (In the formula, smaller values ​​indicate a narrower particle size distribution.) It is determined by [the following].

[0034] In some embodiments, the particle size distribution of the abrasive particles ([D 90 -D 10 ] / D 50) is about 2.0 or less, about 1.9 or less, about 1.8 or less, about 1.7 or less, about 1.6 or less, about 1.5 or less, about 1.4 or less, about 1.3 or less, about 1.2 or less, about 1.1 or less, about 1.0 or less, about 0.95 or less, about 0.90 or less, about 0.85 or less, about 0.80 or less, about 0.75 or less, about 0.70 or less, about 0.65 or less, about 0.60 or less, about 0.55 or less, about 0.50 or less, about 0.45 or less, about 0.40 or less, about 0.35 or less, about 0.30 or less, about 0.25 or less, about 0.20 or less, about 0.15 or less, about 0.10 or less, or includes any two of these values, and / or is any range or value between any two of these values. In some embodiments, the particle size distribution ([D 90 -D 10 / D 50 ) of the polishing particles (abrasive) is 0.66 or less, 0.65 or less, 0.64 or less, 0.63 or less, 0.62 or less, 0.61 or less, 0.59 or less, 0.58 or less, 0.57 or less, or includes any two of these values, and / or is any range or value between any two of these values. In some embodiments, the particle size distribution ([D 90 -D 10 / D 50 ) of the polishing particles (abrasive) is 0.10 or more, 0.20 or more, 0.30 or more, 0.40 or more, 0.50 or more, 0.51 or more, 0.52 or more, 0.53 or more, 0.54 or more, 0.55 or more or includes any two of these values, and / or is any range or value between any two of these values.

[0035] In this specification, the polishing composition may sometimes be simply referred to as "composition".

[0036] In some embodiments, the abrasive particles are present in amounts of approximately 0.1% or more by weight, approximately 0.15% or more by weight, approximately 0.2% or more by weight, approximately 0.25% or more by weight, approximately 0.3% or more by weight, approximately 0.35% or more by weight, approximately 0.4% or more by weight, approximately 0.45% or more by weight, approximately 0.5% or more by weight, approximately 0.55% or more by weight, approximately 0.60% or more by weight, approximately 0.65% or more by weight, approximately 0.7% or more by weight, approximately 0.75% or more by weight, approximately 0.8% or more by weight, approximately 0.85% or more by weight, approximately 0.9% or more by weight, approximately 0.95% or more by weight, approximately 1.0% or more by weight, approximately 1.1% or more by weight, approximately 1.2% or more by weight, approximately 1.3% or more by weight, and approximately 1. It is present in the composition in a concentration by weight of 4% or more by weight, approximately 1.5% or more by weight, approximately 1.6% or more by weight, approximately 1.7% or more by weight, approximately 1.8% or more by weight, approximately 1.9% or more by weight, approximately 2.0% or more by weight, approximately 2.5% or more by weight, approximately 3.0% or more by weight, approximately 3.5% or more by weight, approximately 4.0% or more by weight, approximately 4.5% or more by weight, approximately 5.0% or more by weight, approximately 5.5% or more by weight, approximately 6.0% or more by weight, approximately 6.5% or more by weight, approximately 7.0% or more by weight, approximately 7.5% or more by weight, approximately 8.0% or more by weight, approximately 8.5% or more by weight, approximately 9.0% or more by weight, approximately 9.5% or more by weight, approximately 10.0% or more by weight, or any range or value in between these. In some embodiments, abrasive particles (abrasives) are present in the composition at a concentration of 3.6% or more by weight, 3.7% or more by weight, 3.8% or more by weight, 3.9% or more by weight, 4.1% or more by weight, 4.2% or more by weight, 4.3% or more by weight, 4.4% or more by weight, 4.6% or more by weight, 4.7% or more by weight, 4.8% or more by weight, 4.9% or more by weight, 5.1% or more by weight, 5.2% or more by weight, or any range or value in between, based on the total weight of the composition.

[0037] In some embodiments, the abrasive particles are present in amounts of about 10.0% by weight or less, about 9.5% by weight or less, about 9.0% by weight or less, about 8.5% by weight or less, about 8.0% by weight or less, about 7.5% by weight or less, about 7.0% by weight or less, about 6.5% by weight or less, about 6.0% by weight or less, about 5.5% by weight or less, about 5.0% by weight or less, about 4.5% by weight or less, about 4.0% by weight or less, and about 3.9% by weight or less, relative to the total weight of the composition. , about 3.8% by weight or less, about 3.7% by weight or less, about 3.6% by weight or less, about 3.5% by weight or less, about 3.4% by weight or less, about 3.3% by weight or less, about 3.2% by weight or less, about 3.1% by weight or less, about 3.0% by weight or less amount% or less, about 2.9% by weight or less, about 2.8% by weight or less, about 2.7% by weight or less, about 2.6% by weight or less, about 2.5% by weight or less, about 2.4% by weight or less, about 2.3% by weight or less, about 2.2% by weight or less, about 2 .1% by weight or less, about 2.0% by weight or less, about 1.9% by weight or less, about 1.8% by weight or less, about 1.7% by weight or less, about 1.6% by weight or less, about 1.5% by weight or less, about 1.4% by weight or less, about 1.3% by weight or less Lower, about 1.2% by weight or less, about 1.1% by weight or less, about 1.0% by weight or less, about 0.95% by weight or less, about 0.9% by weight or less, about 0.85% by weight or less, about 0.8% by weight or less, about 0.75% by weight or less, about The abrasive particles (abrasives) are present in the composition at a concentration of 0.7% by weight or less, approximately 0.65% by weight or less, approximately 0.6% by weight or less, approximately 0.55% by weight or less, approximately 0.5% by weight or less, approximately 0.45% by weight or less, approximately 0.4% by weight or less, approximately 0.35% by weight or less, approximately 0.3% by weight or less, approximately 0.25% by weight or less, approximately 0.2% by weight or less, approximately 0.15% by weight or less, approximately 0.1% by weight or less, or any range or value in between these. In some embodiments, the abrasive particles (abrasives) are present in the composition at a concentration of 5.4% by weight or less, 5.3% by weight or less, or any range or value in between these, relative to the total weight of the composition.

[0038] In some embodiments, the abrasive particles are present in amounts of approximately 0.1% to 10.0% by weight, approximately 0.2% to 10.0% by weight, approximately 0.3% to 10.0% by weight, approximately 0.4% to 10.0% by weight, approximately 0.5% to 10.0% by weight, approximately 0.6% to 10.0% by weight, approximately 0.7% to 10.0% by weight, approximately 0.8% to 10.0% by weight, approximately 0.9% to 10.0% by weight, approximately 1.0% to 10.0% by weight, approximately 2% to 10.0% by weight, approximately 2.2% to 10.0% by weight, and approximately 2.5% to 10.0% by weight relative to the total weight of the composition. %, about 2.8% to about 10.0%, about 3% to about 10.0%, about 3.5% to about 10.0%, about 4% to about 10.0%, about 5% to about 10.0%, about 5% to about 9.5%, about 5% to about 9.0%, about 5% to about 8.5%, about 5 Weight% to about 8.0% by weight, about 5% to about 7.5% by weight, about 5% to about 7.0% by weight, about 5% to about 6.5% by weight, about 4.5% to about 7.0% by weight, about 4.0% to about 7.5% by weight, about 3.5% to about 8.0% by weight, about 3.0% to about 8.5% by weight, about 2.5% by weight ~9.0% by weight, approximately 2.0% by weight ~ approximately 9.5% by weight, approximately 1.5% by weight ~ approximately 10.0% by weight, approximately 3.0% by weight ~ approximately 5% by weight, approximately 0.1% by weight ~ approximately 3.0% by weight, approximately 0.2% by weight ~ approximately 3.0% by weight, approximately 0.3% by weight ~ approximately 3.0% by weight, approximately 0.4% by weight ~ approximately 3.0% by weight, approximately 0.5 Weight% to about 3.0% by weight, about 0.6% to about 3.0% by weight, about 0.7% to about 3.0% by weight, about 0.8% to about 3.0% by weight, about 0.9% to about 3.0% by weight, about 1.0% to about 3.0% by weight, about 1.2% to about 3.0% by weight, about 1.5% to about 3.0% by weight, approx. 1.8% to 3.0% by weight, 2.0% to 3.0%, 2.2% to 3.0%, 2.2% to 2.5%, 0.1% to 2.5%, 0.2% to 2.5%, 0.3% to 2.5%, 0.4% to 2.5% by weight %, about 0.5% to about 2.5%, about 0.6% to about 2.5%, about 0.7% to about 2.5%, about 0.8% to about 2.5%, about 0.9% to about 2.5%, about 1.0% to about 2.5%, about 1.2% to about 2.5%, about 1.5% to about 2.The abrasive particles (abrasives) are present in the composition at a concentration of 5% by weight, approximately 1.8% to approximately 2.5% by weight, approximately 2.0% to approximately 2.5% by weight, or any range or value within these limits. In some embodiments, the abrasive particles are present in the composition at a concentration of 5.1% to 5.4% by weight, or any range or value within these limits, relative to the total weight of the composition.

[0039] In some embodiments, the abrasive particles (e.g., unmodified colloidal silica or anionically modified colloidal silica) have a negative charge under the pH conditions used in the abrasive compositions of the Disclosure. In some embodiments, the abrasive particles (e.g., colloidal silica or anionically modified colloidal silica) have a negative charge at the pH of the abrasive composition (e.g., 6.5 to 11, or 7 to 11). In some embodiments, the zeta potential of the abrasive particles is on the negative side, at -1mV, -2mV, -5mV, -10mV, -15mV, -20mV, -25mV, -30mV, -35mV, or -40mV, or any range or value above these. In some embodiments, the zeta potential of the anionically modified abrasive particles is more negatively charged (i.e., on the more negative side) than the corresponding unmodified abrasive particles (e.g., unmodified colloidal silica) at the same pH conditions. In some embodiments, the zeta potential of the abrasive particles (abrasive) is positive, at or above -60mV, -50mV, or any range or value in between these. The zeta potential of the abrasive particles used in the examples is approximately -40 to -50mV.

[0040] In some embodiments, the abrasive particles include 2.00 or less, 1.90 or less, 1.80 or less, 1.70 or less, 1.60 or less, 1.50 or less, 1.40 or less, 1.30 or less, 1.20 or less, 1.10 or less, 1.00 or less, or any two of these values, and / or have an aspect ratio of any range or value between any two of these values. In some embodiments, the abrasive particles (abrasive) have an aspect ratio of 1.00 or more.

[0041] In some embodiments, the abrasive particles are spherical or nearly spherical. In some embodiments, the abrasive particles are spherical particles. For the purposes of this disclosure, the term “spherical particles” means abrasive particles that are nearly spherical (for example, having an aspect ratio of 1.2 or less).

[0042] In some embodiments, the abrasive particles (abrasive) substantially consist of unmodified colloidal silica or modified colloidal silica. As used herein, “substantially” means that 95% by weight or more, preferably 98% by weight or more, and more preferably 99% by weight or more of the particles constituting the abrasive are unmodified colloidal silica or modified colloidal silica, and this includes 100% by weight of the particles being unmodified colloidal silica or modified colloidal silica.

[0043] Phosphate surfactants In some embodiments, the polishing compositions according to this disclosure comprise one or more phosphate surfactants. In some non-limiting embodiments, the phosphate surfactant comprises a polyoxyethylene alkyl ether phosphate or a polyoxyethylene alkenyl ether phosphate. In some embodiments, the polyoxyethylene alkyl ether phosphate may comprise a monoester phosphate, a diester phosphate, or a mixture of these two. In some embodiments, the polyoxyethylene alkyl ether phosphate has the following structure: [(alkyl chain)-(polyethylene oxide)-O] m -It contains phosphoric acid (wherein m is 1, 2, or 3).

[0044] In some embodiments, the phosphate surfactant is given by the following formula (I): [Tail-(OC2H5) n -O] m -PO q H r (I) (In the formula, (OC2H5) is an "EO group", and n is 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, or 16) It has the following characteristics. In some embodiments, the number of EO groups is 10 or less. In some embodiments, m is 1, 2, or 3. In some embodiments, r is 0, 1, or 2. In some embodiments, q is 1, 2, or 3.

[0045] In some embodiments, the phosphate surfactant comprises a polyoxyethylene alkylphenyl ether phosphate. In some embodiments, the phosphate surfactant comprises a polyoxyethylene alkylphenyl ether phosphate having 5 to 16 oxyethylene units.

[0046] In some embodiments, the phosphate surfactant comprises a polyoxyethylene alkylphenyl ether phosphate having 1 to 15, 2 to 14, 3 to 13, 4 to 12, 5 to 11, 6 to 10, or 7 to 9 oxyethylene units. In some embodiments, the number of carbon atoms in the alkyl group of the polyoxyethylene alkylphenyl ether phosphate is 4 to 18, 5 to 17, 6 to 16, 7 to 15, 8 to 14, 8 to 13, 8 to 12, or 8 to 11.

[0047] In some embodiments, the phosphate surfactant comprises a polyoxyethylene alkenyl ether phosphate. In some embodiments, the phosphate surfactant comprises a polyoxyethylene alkenyl ether phosphate having 1 to 15, 2 to 14, 3 to 13, 4 to 12, 4 to 11, 5 to 11, 6 to 10, or 7 to 10 oxyethylene units. In some embodiments, the number of carbon atoms in the alkenyl in the polyoxyethylene alkenyl ether phosphate is 7 to 25, 8 to 24, 9 to 23, 10 to 22, 11 to 21, 12 to 20, 13 to 19, or 14 to 18.

[0048] In some embodiments, (m, q, r) is (1, 3, 2), (2, 2, 1), or (3, 1, 0). In some embodiments, n is independently selected from the group 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 in each case. In some embodiments, (m, q, r) is (1, 3, 2). In some embodiments, (m, q, r) is (2, 2, 1). In some embodiments, (m, q, r) is (3, 1, 0). In some embodiments, (m, q, r) is a combination of (1, 3, 2), (2, 2, 1), and (3, 1, 0).

[0049] In some embodiments, the tail portion is a substituted or unsubstituted linear or branched alkyl, alkenyl, alkynyl, phenyl, or alkylphenyl C 2~24 Contains hydrocarbons. In some embodiments, the alkyl tail contains a phenyl group (styrene-phenyl or nonylphenyl). In some embodiments, the tail contains hydrocarbons having at least 2, at least 3, at least 4, at least 5, at least 6, at least 7, at least 8, at least 9, at least 10, at least 11, at least 12, at least 13, at least 14, at least 15, at least 16, at least 17, at least 18, at least 19, at least 20, at least 21, at least 22, at least 23, at least 24, or more carbon atoms.

[0050] In some embodiments, the phosphate surfactant comprises an oxyethylene unit and an alkylphenyl or alkenyl.

[0051] In some embodiments, the number of oxyethylene units in the phosphate surfactant is 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, or 15.

[0052] In some embodiments, the alkyl in the alkylphenyl in the phosphate surfactant is linear or branched, C4 or higher, C5 or higher, C6 or higher, C7 or higher, or C8 or higher. In some embodiments, the alkyl in the alkylphenyl in the phosphate surfactant is linear or branched, C 18 Below, C 17 Below, C 16 Below, C 15 Below, C 14 Below, C 13 Below, C 12 Below, C 11 The following, or C 10 The following applies:

[0053] In some embodiments, the alkenyl in the phosphate surfactant is linear or branched, C7 or higher, C8 or higher, C9 or higher, C 10 That's all, C 11 That's all, C 12 That's all, C 13 That's all, C 14 That's all, C 15 That's all, C 16 That's all, C 17 The above, or C 18 That concludes the explanation. In some embodiments, the alkenyl in the phosphate surfactant is linear or branched, C 25 Below, C 24 Below, C 23 Below, C 22 Below, C 21 Below, C 20 The following, or C 19 The following applies:

[0054] In some embodiments, 80% or more, 85% or more, 90% or more, 95% or more, or 99% or more by weight of the surfactant present in the abrasive composition is composed of the phosphate surfactant represented by formula (I) above.

[0055] In some embodiments, the phosphate surfactant has a molecular weight of approximately 150 g / mol or more, approximately 200 g / mol or more, approximately 250 g / mol or more, approximately 300 g / mol or more, approximately 350 g / mol or more, approximately 400 g / mol or more, approximately 450 g / mol or more, approximately 500 g / mol or more, approximately 550 g / mol or more, approximately 600 g / mol or more, approximately 650 g / mol or more, approximately 700 g / mol or more, approximately 750 g / mol or more, approximately 800 g / mol or more, approximately 850 g / mol or more, approximately 900 g / mol or more, approximately 950 g / mol or more, approximately 1000 g / mol or more, approximately 1100 g / mol or more, approximately 1200 g / mol or more, approximately 1300 g / mol or more, approximately 1400 g / mol or more, approximately 1500 g / mol or more, or any range or value in between.

[0056] In some embodiments, the phosphate surfactant comprises a polyoxyethylene alkylphenyl ether phosphate or a polyoxyethylene alkenyl ether phosphate. In some embodiments, the phosphate surfactant comprises a polyoxyethylene alkylphenyl ether phosphate having 4 to 16 oxyethylene units. In some embodiments, the phosphate surfactant includes at least one of the following: laureth-4 phosphate (e.g., Ethfac 142W), polyoxyethylene(4) nonylphenyl phosphate, polyoxyethylene(5) nonylphenyl phosphate, polyoxyethylene(7) nonylphenyl phosphate (e.g., Ethfac NP-110), polyoxyethylene(10) nonylphenyl phosphate, polyoxyethylene(12) nonylphenyl phosphate, polyoxyethylene(16) nonylphenyl phosphate, polyoxyethylene(7) phenyl phosphate, polyoxyethylene(7) dodecylphenyl phosphate, polyoxyethylene(7) nonyl phosphate, polyoxyethylene(7) propylphenyl phosphate, and polyoxyethylene(10) oleyl ether phosphate (e.g., Crodafos O10A), as well as combinations thereof. In some embodiments, the phosphate surfactant comprises polyoxyethylene(7) nonylphenyl phosphate (e.g., Ethfac NP-110) or polyoxyethylene(10) nonylphenyl phosphate.

[0057] In some embodiments, the anionic surfactant (e.g., phosphate surfactant) is present in amounts of about 0.001% or more by weight, about 0.002% or more by weight, about 0.003% or more by weight, about 0.004% or more by weight, about 0.005% or more by weight, about 0.006% or more by weight, about 0.007% or more by weight, about 0.008% or more by weight, about 0.009% or more by weight, about 0.01% or more by weight, about 0.02% or more by weight, about 0.03% or more by weight, and about 0. The composition contains a concentration by weight of 0.04% or more, approximately 0.05% or more, approximately 0.06% or more, approximately 0.07% or more, approximately 0.08% or more, approximately 0.09% or more, approximately 0.1% or more, approximately 0.2% or more, approximately 0.3% or more, approximately 0.4% or more, approximately 0.5% or more, approximately 0.6% or more, approximately 0.7% or more, approximately 0.8% or more, approximately 0.9% or more, approximately 1.0% or more, or any range or value in between. In some embodiments, anionic surfactants (e.g., phosphate surfactants) are present in the composition at a concentration by weight of more than 0.005% or more relative to the total weight of the abrasive composition.

[0058] In some embodiments, the anionic surfactant (e.g., phosphate surfactant) is present in amounts of about 1.0% by weight or less, about 0.9% by weight or less, about 0.8% by weight or less, about 0.7% by weight or less, about 0.6% by weight or less, about 0.5% by weight or less, about 0.4% by weight or less, about 0.3% by weight or less, about 0.2% by weight or less, about 0.1% by weight or less, about 0.09% by weight or less, and about 0.08% by weight, relative to the total weight of the abrasive composition. The following concentrations by weight are present in the composition: approximately 0.07% by weight or less, approximately 0.06% by weight or less, approximately 0.05% by weight or less, approximately 0.04% by weight or less, approximately 0.03% by weight or less, approximately 0.02% by weight or less, approximately 0.01% by weight or less, approximately 0.009% by weight or less, approximately 0.008% by weight or less, approximately 0.007% by weight or less, approximately 0.006% by weight or less, approximately 0.005% by weight or less, or any range or value in between.

[0059] In some embodiments, anionic surfactants (e.g., phosphate surfactants) are added in amounts of about 0.001% to about 1.0% by weight, about 0.002% to about 1.0% by weight, about 0.003% to about 1.0% by weight, about 0.004% to about 1.0% by weight, about 0.005% to about 1.0% by weight, about 0.006% to about 1.0% by weight, about 0.007% to about 1.0% by weight, about 0.008% to about 1.0% by weight, about 0.009% to about 1.0% by weight, about 0.01% to about 1.0% by weight, and about 0.02% to about 1% by weight, relative to the total weight of the abrasive composition. .0% by weight, about 0.03% to about 1.0% by weight, about 0.04% to about 1.0% by weight, about 0.05% to about 1.0% by weight, about 0.06% to about 1.0% by weight, about 0.07% to about 1.0% by weight, about 0.08% to about 1.0% by weight, about 0.09% to about 1.0% by weight , about 0.1% to about 1.0% by weight, 0.001% to about 0.5% by weight, about 0.002% to about 0.5% by weight, about 0.003% to about 0.5% by weight, about 0.004% to about 0.5% by weight, about 0.005% to about 0.5% by weight, about 0.006% to about 0.5% by weight, about 0.007 weight % to about 0.5 weight %, about 0.008 weight % to about 0.5 weight %, about 0.009 weight % to about 0.5 weight %, about 0.01 weight % to about 0.5 weight %, about 0.02 weight % to about 0.5 weight %, about 0.03 weight % to about 0.5 weight %, about 0.04 weight % to about 0.5 weight %, about 0. 05% by weight to about 0.5% by weight, about 0.06% to about 0.5% by weight, about 0.07% to about 0.5% by weight, about 0.08% to about 0.5% by weight, about 0.09% to about 0.5% by weight, about 0.1% to about 0.5% by weight, 0.001% to about 0.3% by weight, about 0.002% by weight ~0.3% by weight, approximately 0.003% by weight ~ approximately 0.3% by weight, approximately 0.004% by weight ~ approximately 0.3% by weight, approximately 0.005% by weight ~ approximately 0.3% by weight, approximately 0.006% by weight ~ approximately 0.3% by weight, approximately 0.007% by weight ~ approximately 0.3% by weight, approximately 0.008% by weight ~ approximately 0.3% by weight, approximately 0.009% by weight Amount %~about 0.3 weight%, about 0.01 weight%~about 0.3 weight%, about 0.02 weight%~about 0.3 weight%, about 0.03 weight%~about 0.3 weight%, about 0.04 weight%~about 0.3 weight%, about 0.05 weight%~about 0.3 weight%, about 0.06 weight%~about 0.3 weight%, about 0.07 weight%~about 0.It is present in the composition at a concentration of 3% by weight, approximately 0.08% to approximately 0.3% by weight, approximately 0.09% to approximately 0.3% by weight, approximately 0.1% to approximately 0.3% by weight, or any range or value in between.

[0060] In some embodiments, the concentration ratio of the abrasive to the surfactant is approximately 1 or more, approximately 2 or more, approximately 3 or more, approximately 4 or more, approximately 5 or more, approximately 6 or more, approximately 7 or more, approximately 8 or more, approximately 9 or more, approximately 10 or more, approximately 15 or more, approximately 20 or more, approximately 25 or more, approximately 30 or more, approximately 35 or more, approximately 40 or more, approximately 45 or more, approximately 50 or more, approximately 60 or more, approximately 70 or more, approximately 80 or more, approximately 90 or more, approximately 100 or more, approximately 200 or more, approximately 300 or more, approximately 400 or more. Approximately 500 or more, approximately 600 or more, approximately 700 or more, approximately 800 or more, approximately 900 or more, approximately 1000 or more, approximately 1100 or more, approximately 1200 or more, approximately 1300 or more, approximately 1400 or more, approximately 1500 or more, approximately 1600 or more, approximately 1700 or more, approximately 1800 or more, approximately 1900 or more, approximately 2000 or more, or including any two of these values, and / or any range or value between any two of these values. The concentration ratio of the abrasive to the surfactant is obtained by the concentration of the abrasive in the polishing composition (weight %) / the concentration of the surfactant in the polishing composition (weight %).

[0061] In some embodiments, the concentration ratio of the abrasive to the surfactant is approximately 2000 or less, approximately 1900 or less, approximately 1800 or less, approximately 1700 or less, approximately 1600 or less, approximately 1500 or less, approximately 1400 or less, approximately 1300 or less, approximately 1200 or less, approximately 1100 or less, approximately 1000 or less, approximately 900 or less, approximately 800 or less, approximately 700 or less, approximately 600 or less, approximately 500 or less, approximately 400 or less, approximately 300 or less, approximately 200 or less, approximately 100 or less. Approximately 90 or less, approximately 80 or less, approximately 70 or less, approximately 60 or less, approximately 50 or less, approximately 45 or less, approximately 40 or less, approximately 35 or less, approximately 30 or less, approximately 25 or less, approximately 20 or less, approximately 15 or less, approximately 10 or less, approximately 9 or less, approximately 8 or less, approximately 7 or less, approximately 6 or less, approximately 5 or less, approximately 4 or less, approximately 3 or less, approximately 2 or less, approximately 1 or less, or including any two of these values ​​and / or any range or value between any two of these values. In some embodiments, the concentration ratio of the abrasive to the surfactant is less than 1040.

[0062] organic acid In some embodiments, the polishing compositions according to the present disclosure comprise one or more acidic compounds. In some embodiments, the one or more acidic compounds comprise one or more organic acids (e.g., carboxylic acids, e.g., formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, tartaric acid, citric acid, and lactic acid; organic sulfuric acids, e.g., methanesulfonic acid, ethanesulfonic acid, and isethionic acid, and any combination thereof; and organic phosphonoacetic acid, e.g., 2-hydroxyphosphonoacetic acid (HPAA); and combinations thereof). In some embodiments, the organic acid is citric acid. In some embodiments, the polishing composition according to the Disclosure comprises an organic acid. In some embodiments, the organic acid comprises a carboxyl group. In some embodiments, the organic acid comprises a carboxyl group and a hydroxyl group. In some embodiments, the organic acid comprises two or more carboxyl groups and one hydroxyl group. In some embodiments, the number of carboxyl groups in the organic acid is, for example, five or fewer, four or fewer, or three or fewer. In some embodiments, the organic acid does not have a sulfonic acid group. In some embodiments, the organic acid does not contain either a sulfur atom or a phosphorus atom.

[0063] In some mechanisms, one or more organic acids are present in amounts of about 0.001% to about 5% by weight, about 0.01% to about 0.5% by weight, about 0.005% to about 5% by weight, about 0.01% to about 5% by weight, about 0.05% to about 5% by weight, about 0.1% to about 5% by weight, about 0.5% to about 5% by weight, about 1% to about 5% by weight, and about 0.001% to about 1% by weight, relative to the total weight of the abrasive composition. Approximately 0.005% to approximately 1% by weight, approximately 0.01% to approximately 1% by weight, approximately 0.05% to approximately 1% by weight, approximately 0.1% to approximately 1% by weight, approximately 0.5% to approximately 1% by weight, approximately 0.001% to approximately 0.1% by weight, approximately 0.005% to approximately 0.1% by weight, approximately 0.01% to approximately 0.1% by weight, approximately 0.05% to approximately 0.1% by weight, approximately 0.001% to approximately 0.1% by weight, or any of these values This includes any two of these values ​​and / or any range or value between any two of these values ​​(e.g., approximately 0.001% by weight, approximately 0.002% by weight, approximately 0.003% by weight, approximately 0.004% by weight, approximately 0.005% by weight, approximately 0.006% by weight, approximately 0.007% by weight, approximately 0.008% by weight, approximately 0.009% by weight, approximately 0.01% by weight, approximately 0.02% by weight, approximately 0.03% by weight, approximately 0.04% by weight) It is present in the abrasive composition at a concentration by weight of %, approximately 0.05% by weight, approximately 0.06% by weight, approximately 0.07% by weight, approximately 0.08% by weight, approximately 0.09% by weight, approximately 0.1% by weight, approximately 0.2% by weight, approximately 0.3% by weight, approximately 0.4% by weight, approximately 0.5% by weight, approximately 0.6% by weight, approximately 0.7% by weight, approximately 0.8% by weight, approximately 0.9% by weight, approximately 1% by weight, approximately 2% by weight, approximately 3% by weight, approximately 4% by weight, or approximately 5% by weight). In some embodiments, one or more organic acids are present in the polishing composition at a concentration of about 0.01% by weight or more, about 0.02% by weight or more, about 0.03% by weight or more, about 0.04% by weight or more, about 0.05% by weight or more, about 0.06% by weight or more, about 0.07% by weight or more, about 0.08% by weight or more, or about 0.09% by weight or more, relative to the total weight of the polishing composition.In some embodiments, one or more organic acids are present in the polishing composition at a concentration of about 3% by weight or less, about 2% by weight or less, about 1% by weight or less, about 0.9% by weight or less, about 0.8% by weight or less, about 0.7% by weight or less, about 0.6% by weight or less, about 0.5% by weight or less, about 0.4% by weight or less, about 0.3% by weight or less, or about 0.2% by weight or less, relative to the total weight of the polishing composition.

[0064] Electronic conductivity (EC) control agent In some embodiments, the polishing compositions according to the Disclosure further include a salt that functions as an electronic conductivity (EC) control agent. The EC control agent may be any salt suitable for the polishing composition (e.g., suitable for adjusting the ionic strength of the composition). For example, in some embodiments, the EC control agent is a citrate, e.g., potassium citrate (e.g., tripotassium citrate) or ammonium citrate. In some embodiments, the EC control agent is a nitrate, e.g., sodium nitrate, potassium nitrate, or ammonium nitrate. In some embodiments, the EC control agent is an acetate, e.g., sodium acetate, potassium acetate, or ammonium acetate. In some embodiments, the EC control agent is a halogen salt (e.g., NaCl or KCl). In some embodiments, the EC control agent may include KHCO3 or NaHCO3. The EC control agent may also be in hydrate form before addition. In some embodiments, the electronic conductivity (EC) control agent is a salt of an organic acid contained in the polishing composition according to the Disclosure.

[0065] In some embodiments, the anion of the EC control agent (e.g., the citrate anion) is the same as the anion of the organic acid (e.g., the citrate anion of citric acid).

[0066] In some embodiments, one or more EC control agents are added in amounts of approximately 0.001% to approximately 5% by weight, approximately 0.005% to approximately 5% by weight, approximately 0.01% to approximately 5% by weight, approximately 0.05% to approximately 5% by weight, approximately 0.1% to approximately 5% by weight, approximately 0.5% to approximately 5% by weight, approximately 1% to approximately 5% by weight, approximately 0.001% to approximately 1% by weight, and approximately 0.005% by weight, relative to the total weight of the polishing composition. %~approximately 1% by weight, approximately 0.01%~approximately 1% by weight, approximately 0.05%~approximately 1% by weight, approximately 0.1%~approximately 1% by weight, approximately 0.5%~approximately 1% by weight, approximately 0.001%~approximately 0.1% by weight, approximately 0.005%~approximately 0.1% by weight, approximately 0.01%~approximately 0.1% by weight, approximately 0.05%~approximately 0.1% by weight, approximately 0.001%~approximately 0.1%, or any two of these values. This includes and / or any range or value between any two of these values ​​(e.g., approximately 0.001% by weight, approximately 0.002% by weight, approximately 0.003% by weight, approximately 0.004% by weight, approximately 0.005% by weight, approximately 0.006% by weight, approximately 0.007% by weight, approximately 0.008% by weight, approximately 0.009% by weight, approximately 0.01% by weight, approximately 0.02% by weight, approximately 0.03% by weight, approximately 0.04% by weight). It exists in concentrations by weight of approximately 0.05% by weight, approximately 0.06% by weight, approximately 0.07% by weight, approximately 0.08% by weight, approximately 0.09% by weight, approximately 0.1% by weight, approximately 0.2% by weight, approximately 0.3% by weight, approximately 0.4% by weight, approximately 0.5% by weight, approximately 0.6% by weight, approximately 0.7% by weight, approximately 0.8% by weight, approximately 0.9% by weight, approximately 1% by weight, approximately 2% by weight, approximately 3% by weight, approximately 4% by weight, or approximately 5% by weight. In some embodiments, one or more electronic conductivity (EC) control agents are present in the polishing composition at a concentration of about 0.01% by weight or more, about 0.02% by weight or more, about 0.03% by weight or more, about 0.04% by weight or more, about 0.05% by weight or more, about 0.06% by weight or more, about 0.07% by weight or more, about 0.08% by weight or more, about 0.09% by weight or more, about 0.1% by weight or more, about 0.12% by weight or more, about 0.14% by weight or more, about 0.16% by weight or more, or about 0.18% by weight or more, based on the total weight of the polishing composition.In some embodiments, one or more EC control agents (e.g., salts of organic acids) are present in the polishing composition at a concentration of about 3% by weight or less, about 2% by weight or less, about 1% by weight or less, about 0.9% by weight or less, about 0.8% by weight or less, about 0.7% by weight or less, about 0.6% by weight or less, about 0.5% by weight or less, about 0.4% by weight or less, about 0.3% by weight or less, or about 0.2% by weight or less, relative to the total weight of the polishing composition.

[0067] Corrosion inhibitor In some embodiments, the polishing compositions according to this disclosure include a corrosion inhibitor (e.g., a Cu corrosion inhibitor). While not bound by any particular theory, the corrosion inhibitor is thought to passivate the metal surface (e.g., a Cu surface) to prevent pitting and other types of corrosion defects during CMP. As a non-limiting example, in some embodiments, the corrosion inhibitor may include an azole compound. In some embodiments, the corrosion inhibitor includes one or more of the following: benzotriazole (BTA), 1,2,4-triazole, tetrazole, tritriazole, 4-carboxybenzotriazole, 5-carboxybenzotriazole, mercaptobenzoxazole, 2-mercaptobenzothiazole, 2-mercaptobenzimidazole, and derivatives thereof. In some embodiments, the corrosion inhibitor includes benzotriazole (BTA).

[0068] The concentration of the corrosion inhibitor may be any suitable concentration at the pH of the polishing composition to prevent corrosion, pitting, or etching of the metal (e.g., Cu). In some embodiments, the corrosion inhibitor is present in amounts of about 0.001% by weight or more, about 0.002% by weight or more, about 0.003% by weight or more, about 0.004% by weight or more, about 0.005% by weight or more, about 0.006% by weight or more, about 0.007% by weight or more, about 0.008% by weight or more, about 0.009% by weight or more, about 0.01% by weight or more, about 0.02% by weight or more, about 0.03% by weight or more, about 0.04% by weight or more, about 0.05% by weight or more, and about 0.06% by weight, relative to the total weight of the polishing composition. The above amounts are present in the abrasive composition in concentrations of approximately 0.07% by weight or more, approximately 0.08% by weight or more, approximately 0.09% by weight or more, approximately 0.1% by weight or more, approximately 0.2% by weight or more, approximately 0.3% by weight or more, approximately 0.4% by weight or more, approximately 0.5% by weight or more, approximately 0.6% by weight or more, approximately 0.7% by weight or more, approximately 0.8% by weight or more, approximately 0.9% by weight or more, approximately 1% by weight or more, or any two of these values, and / or any range or value between any two of these values.

[0069] In some embodiments, the corrosion inhibitor is present in the abrasive composition in a concentration of about 1% by weight or less, about 0.9% by weight or less, about 0.8% by weight or less, about 0.7% by weight or less, about 0.6% by weight or less, about 0.5% by weight or less, about 0.4% by weight or less, about 0.3% by weight or less, about 0.2% by weight or less, about 0.1% by weight or less, about 0.09% by weight or less, about 0.08% by weight or less, about 0.07% by weight or less, about 0.06% by weight or less, about 0.05% by weight or less, about 0.04% by weight or less, about 0.03% by weight or less, about 0.02% by weight or less, about 0.01% by weight or less, or any two of these values, and / or any range or value between any two of these values.

[0070] In some embodiments, the corrosion inhibitor is added in amounts of approximately 0.001% to approximately 1% by weight, approximately 0.002% to approximately 1% by weight, approximately 0.003% to approximately 1% by weight, approximately 0.004% to approximately 1% by weight, approximately 0.005% to approximately 1% by weight, approximately 0.006% to approximately 1% by weight, approximately 0.007% to approximately 1% by weight, approximately 0.008% to approximately 1% by weight, approximately 0.009% to approximately 1% by weight, approximately 0.01% to approximately 1% by weight, approximately 0.02% to approximately 1% by weight, approximately 0.03% to approximately 1% by weight, approximately 0.04% to approximately 1% by weight, approximately 0.05% by weight, relative to the total weight of the abrasive composition. About 1% by weight, about 0.06% to about 1% by weight, about 0.07% to about 1% by weight, about 0.08% to about 1% by weight, about 0.09% to about 1% by weight, about 0.1% to about 1% by weight, about 0.2% to about 1% by weight, about 0.3% to about 1% by weight, about 0.4% to about 1% by weight, about 0. 5% to about 1% by weight, about 0.001% to about 0.5% by weight, about 0.002% to about 0.5% by weight, about 0.003% to about 0.5% by weight, about 0.004% to about 0.5% by weight, about 0.005% to about 0.5% by weight, about 0.006% to about 0.5% by weight, about 0.007 Weight% to about 0.5% by weight, about 0.008% to about 0.5% by weight, about 0.009% to about 0.5% by weight, about 0.01% to about 0.5% by weight, about 0.02% to about 0.5% by weight, about 0.03% to about 0.5% by weight, about 0.04% to about 0.5% by weight, about 0.05% by weight ~ about 0.5% by weight, about 0.06% by weight - about 0.5% by weight, about 0.07% by weight - about 0.5% by weight, about 0.08% by weight - about 0.5% by weight, about 0.09% by weight - about 0.5% by weight, about 0.1% by weight - about 0.5% by weight, about 0.2% by weight - about 0.5% by weight, about 0.3% by weight - about 0.5% by weight, About 0.001% to about 0.2% by weight, about 0.002% to about 0.2% by weight, about 0.003% to about 0.2% by weight, about 0.004% to about 0.2% by weight, about 0.005% to about 0.2% by weight, about 0.006% to about 0.2% by weight, about 0.007% to about 0.2% by weight , about 0.008 weight % to about 0.2 weight %, about 0.009 weight % to about 0.2 weight %, about 0.01 weight % to about 0.2 weight %, about 0.02 weight % to about 0.2 weight %, about 0.03 weight % to about 0.2 weight %, about 0.04 weight % to about 0.2 weight %, about 0.05 weight % to about 0.2 weight %, about 0.06% by weight to approximately 0.2% by weight, approximately 0.07% by weight to approximately 0.2% by weight, approximately 0.08% by weight to approximately 0.2% by weight, approximately 0.09% by weight to approximately 0.2% by weight, approximately 0.1% by weight to approximately 0.2% by weight, approximately 0.001% by weight to approximately 0.1% by weight, approximately 0.002 weight% to about 0.1 weight%, about 0.003 weight% to about 0.1 weight%, about 0.004 weight% to about 0.1 weight%, about 0.005 weight% to about 0.1 weight%, about 0.006 weight% to about 0.1 weight%, about 0.007 weight% to about It is present in the abrasive composition in concentrations of 0.1% by weight, approximately 0.008% to approximately 0.1% by weight, approximately 0.009% to approximately 0.1% by weight, approximately 0.01% to approximately 0.1% by weight, approximately 0.02% to approximately 0.1% by weight, approximately 0.03% to approximately 0.1% by weight, approximately 0.04% to approximately 0.1% by weight, approximately 0.05% to approximately 0.1% by weight, or any two of these values, and / or any range or value between any two of these values.

[0071] Water-soluble polymer In some embodiments, the polishing compositions according to this disclosure comprise one or more water-soluble polymers. In some embodiments, the water-soluble polymer is, for example, in solid form (powder form) at 25°C, soluble in water, and thereby liquid. A water-soluble polymer-containing liquid can be prepared by dissolving the water-soluble polymer in water. Here, "water-soluble" means having a solubility in water (25°C) of 1 g / 100 mL or more, and "polymer" refers to a (co)polymer having repeating units in its molecular structure and a weight-average molecular weight (Mw) of 1,000 or more. In this specification, "weight-average molecular weight" may refer to the value of the weight-average molecular weight (in terms of polyethylene glycol) measured by gel permeation chromatography (GPC). The weight-average molecular weight can be measured by the following apparatus and conditions: GPC equipment: Manufactured by Shimadzu Corporation Model: Prominence + ELSD detector (ELSD-LTII) Column: VP-ODS (manufactured by Shimadzu Corporation) Mobile phase A:MeOH B: 1% aqueous solution of acetic acid Flow rate: 1mL / min Detector: ELSD, temp. 40℃, Gain 8, N2GAS 350kPa Oven temperature: 40℃ Injection volume: 40μL.

[0072] The one or more water-soluble polymers are not particularly limited. Non-limiting examples of water-soluble polymers include one or more polysaccharides (e.g., alginic acid, pectic acid, agar, curdlan, and pullulan); cellulose derivatives (e.g., hydroxymethylcellulose, hydroxyethylcellulose (HEC), hydroxypropylcellulose, hydroxyethylmethylcellulose, hydroxypropylmethylcellulose, methylcellulose, ethylcellulose, ethylhydroxyethylcellulose, or carboxymethylcellulose); imine derivatives, e.g., poly(N-acylalkyleneimine); polyvinyl alcohol (PVA); modified (cationically or nonionically modified) polyvinyl alcohol; poly(N-vinylacetamide) (PNVA); polyvinylpyrrolidone (PVP); polyvinylcaprolactam; polyoxyalkylenes (e.g., polyoxyethylene); polypropylene glycol (PPG), polyethylene glycol (PEG), PEG-PPG copolymers or block copolymers (e.g., PEG-PPG, PEG-PPG-PEG, PPG-PEG-PPG, etc.), and copolymers or mixtures thereof. In some embodiments, the water-soluble polymer includes pullulan. One or more water-soluble polymers may be used alone or as a mixture of two or more types of water-soluble polymers.

[0073] In some embodiments, the water-soluble polymer contained in the polishing composition according to this disclosure includes a polysaccharide. In some embodiments, the water-soluble polymer contained in the polishing composition according to this disclosure includes a polysaccharide consisting solely of glucose. In some embodiments, the water-soluble polymer contained in the polishing composition according to this disclosure includes pullulan. In some embodiments, 80% or more, 85% or more, 90% or more, 95% or more, or 99% or more by weight of the water-soluble polymer contained in the polishing composition according to this disclosure consists of polysaccharides. Here, polysaccharide is a general term for a substance in which many monosaccharide molecules are polymerized by glycosidic bonds. The concept of polysaccharide includes sugars in which multiple monosaccharides (2 or more molecules) are bonded to a monosaccharide.

[0074] In some embodiments, the water-soluble polymer contained in the polishing composition according to this disclosure is composed of a polysaccharide consisting solely of glucose (e.g., pullulan) at a concentration of 80% or more, 85% or more, 90% or more, 95% or more by weight, or 99% or more by weight.

[0075] At some retail stores, water-soluble polymers are available in concentrations of approximately 500 g / mol or more, 1000 g / mol or more, 1500 g / mol or more, 2000 g / mol or more, 2500 g / mol or more, 3000 g / mol or more, 3500 g / mol or more, 4000 g / mol or more, 4500 g / mol or more, 5000 g / mol or more, 5500 g / mol or more, 6000 g / mol or more, and 6500 g / mol or more. l or more, about 7000g / mol or more, about 7500g / mol or more, about 8000g / mol or more, about 8500g / mol or more, about 9000g / mol or more, about 9500g / mol or more, about 10000g / mol or more, about 15,000 g / mol or more, about 20,000 g / mol or more, about 25,000 g / mol or more, about 30,000 g / mol or more, about 35,000 g / mol or more, about 40,000 g / mol or more, about 45,000 g / mol or more, about 50,000 g / mol or more, about 55,000 g / mol or more, about 60,000 g / mol or more, about 65,000 g / mol or more, about 70,000 g / mol or more, about 75,000 g / mol or more, about 80000g / mol or more, about 85000g / mol or more, about 90000g / mol or more, about 95000g / mol or more, about 100000g / mol or more, about 150000g / mol or more, about 200000g Having a molecular weight of 1 / mol or more, approximately 250,000 g / mol or more, approximately 300,000 g / mol or more, approximately 350,000 g / mol or more, approximately 400,000 g / mol or more, approximately 450,000 g / mol or more, approximately 500,000 g / mol or more, or including any two of these values, and / or having a molecular weight of any range or value between any two of these values ​​(e.g., 5,000 to 300,000 g / mol).

[0076] In some mechanisms, one or more water-soluble polymers are present in amounts of about 0.001% to about 5% by weight, about 0.01% to about 0.5% by weight, about 0.005% to about 5% by weight, about 0.01% to about 5% by weight, about 0.05% to about 5% by weight, about 0.1% to about 5% by weight, about 0.5% to about 5% by weight, about 1% to about 5% by weight, and about 0.001% to about 1% by weight, approximately 0.005% by weight to approximately 1% by weight, approximately 0.01% by weight to approximately 1% by weight, approximately 0.05% by weight to approximately 1% by weight, approximately 0.1% by weight to approximately 1% by weight, approximately 0.5% by weight to approximately 1% by weight, approximately 0.001% by weight to approximately 0.1% by weight, approximately 0.005% by weight to approximately 0.1% by weight, approximately 0.01% by weight to approximately 0.1% by weight, approximately 0.05% by weight to approximately 0.1% by weight, approximately 0.001% by weight to approximately 0.1% by weight, or these Includes any two of the values ​​and / or any range or value between any two of these values ​​(e.g., approximately 0.001% by weight, approximately 0.002% by weight, approximately 0.003% by weight, approximately 0.004% by weight, approximately 0.005% by weight, approximately 0.006% by weight, approximately 0.007% by weight, approximately 0.008% by weight, approximately 0.009% by weight, approximately 0.01% by weight, approximately 0.02% by weight, approximately 0.03% by weight, It exists in concentrations by weight of approximately 0.04% by weight, 0.05% by weight, 0.06% by weight, 0.07% by weight, 0.08% by weight, 0.09% by weight, 0.1% by weight, 0.2% by weight, 0.3% by weight, 0.4% by weight, 0.5% by weight, 0.6% by weight, 0.7% by weight, 0.8% by weight, 0.9% by weight, 1% by weight, 2% by weight, 3% by weight, 4% by weight, or 5% by weight.

[0077] In some embodiments, the water-soluble polymer is present in a weight concentration of about 0.001% or more by weight, about 0.002% or more by weight, about 0.003% or more by weight, about 0.004% or more by weight, about 0.005% or more by weight, about 0.006% or more by weight, about 0.007% or more by weight, about 0.008% or more by weight, about 0.009% or more by weight, about 0.01% or more by weight, or including any two of these values, and / or any range or value between any two of these values. In some embodiments, the water-soluble polymer is present in a weight concentration of 5% or less by weight, 4% or less by weight, 3% or less by weight, 2% or less by weight, 1% or less by weight, 0.9% or less by weight, 0.7% or less by weight, 0.5% or less by weight, 0.3% or less by weight, 0.1% or less by weight, or any range or value between these, based on the total weight of the polishing composition.

[0078] Oxidizing agent In some embodiments, the polishing compositions of the present disclosure may contain at least one oxidizing agent. The oxidizing agent may be added to the polishing composition to oxidize the metal surface (e.g., Cu) of the object to be polished, thereby improving the rate of metal removal in the polishing process. In some embodiments, the oxidizing agent is added to the polishing composition only immediately before use (e.g., "point of use" or "POU"). In other embodiments, the oxidizing agent is mixed with the other components of the polishing composition almost simultaneously during the manufacturing process. In some embodiments, the composition is manufactured and sold as a storage composition, and the end customer may choose to dilute the storage composition as needed and / or add a suitable amount of oxidizing agent before use.

[0079] In some embodiments, non-limiting examples of oxidizing agents that may be used include, but are not limited to, peroxides (e.g., hydrogen peroxide, sodium peroxide, barium peroxide, etc.), organic oxidizing agents, ozonated water, silver(II) salts, iron(III) salts, permanganic acid, chromic acid, dichromate, peroxodisulfate, peroxolinic acid, peroxosulfate, peroxoboric acid, performic acid, peracetic acid, perbenzoic acid, perphthalic acid, hypochlorous acid, hypobromous acid, hypoiodic acid, chloric acid, chlorous acid, perchloric acid, bromic acid, iodic acid, periodic acid, persulfate, dichloroisocyanuric acid, and salts thereof. The oxidizing agent may be used alone or as a mixture of two or more types. In some embodiments, the oxidizing agent includes hydrogen peroxide, ammonium persulfate, periodic acid, hypochlorous acid, sodium dichloroisocyanurate, or mixtures thereof. In some embodiments, the oxidizing agent comprises hydrogen peroxide (e.g., 30% H2O2). In some embodiments, 80% or more, 85% or more, 90% or more, 95% or more, or 99% or more by weight of the oxidizing agent contained in the polishing composition of the present disclosure consists of hydrogen peroxide.

[0080] In some embodiments, one or more oxidizing agents are added in amounts of approximately 0.1% by weight or more, approximately 0.15% by weight or more, approximately 0.2% by weight or more, approximately 0.25% by weight or more, approximately 0.3% by weight or more, approximately 0.35% by weight or more, approximately 0.45% by weight or more, approximately 0.55% by weight or more, approximately 0.60% by weight or more, approximately 0.65% by weight or more, approximately 0.7% by weight or more, approximately 0.75% by weight or more, approximately 0.8% by weight or more, approximately 0.85% by weight or more, approximately 0.9% by weight or more, approximately 0.95% by weight or more, approximately 1.0% by weight or more, approximately 1.1% by weight or more, approximately 1.2% by weight or more, approximately 1.3% by weight or more, approximately 1.4% by weight or more, and approximately 1.5% by weight or more, relative to the total weight of the composition. The oxidizing agent is present in the composition in a concentration by weight of approximately 1.6% or more by weight, approximately 1.7% or more by weight, approximately 1.8% or more by weight, approximately 1.9% or more by weight, approximately 2.0% or more by weight, approximately 2.5% or more by weight, approximately 3.0% or more by weight, approximately 3.5% or more by weight, approximately 4.0% or more by weight, approximately 4.5% or more by weight, approximately 5.0% or more by weight, approximately 5.5% or more by weight, approximately 6.0% or more by weight, approximately 6.5% or more by weight, approximately 7.0% or more by weight, approximately 7.5% or more by weight, approximately 8.0% or more by weight, approximately 8.5% or more by weight, approximately 9.0% or more by weight, approximately 9.5% or more by weight, approximately 10.0% or more by weight, or including any two of these values, and / or any range or value between any two of these values. In some embodiments, one or more oxidizing agents may be in the form of an aqueous solution, in which case the effective concentration of the oxidizing agent may be, for example, 10-40% by weight, 15-35% by weight. In some embodiments, one or more oxidizing agents are present in the composition at a concentration of 10% by weight or less, 9% by weight or less, 8% by weight or less, 7% by weight or less, 6% by weight or less, 5% by weight or less, 4% by weight or less, 3% by weight or less, 2% by weight or less, or any range or value in between, relative to the total weight of the composition.

[0081] Reducing the content of one or more oxidizing agents can save on material costs associated with the abrasive composition and reduce the burden associated with waste disposal after use. Reducing the content of oxidizing agents can also reduce the possibility of excessive oxidation of the surface.

[0082] pH adjuster In some embodiments, the compositions according to the present disclosure may further include one or more pH adjusters for adjusting the pH to a selected pH value. In some embodiments, the abrasives, surfactants, corrosion inhibitors, EC control agents, organic acids, and water-soluble polymers, as well as the “additional components” listed below, are not considered pH adjusters.

[0083] The pH adjuster is not particularly limited, and any suitable pH adjuster may be used to bring the pH of the composition to any desired range as described above. In some embodiments, one or more pH adjusters may include, essentially consist of, or comprise inorganic compounds, organic compounds, or combinations thereof.

[0084] In some embodiments, one or more pH adjusters may include one or more alkali metal hydroxides (e.g., NaOH, KOH) or salts thereof (e.g., carbonates, bicarbonates, sulfates, acetates, etc.); quaternary ammonium compounds (e.g., tetramethylammonium, tetraethylammonium, tetrabutylammonium, etc.); quaternary ammonium hydroxides (e.g., tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide) or salts thereof; ammonia; amines or any other suitable pH adjusters.

[0085] In some embodiments, one or more pH adjusters may include inorganic acids (e.g., hydrochloric acid, hydrobromic acid, hydroiodic acid, sulfuric acid, nitric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid, and phosphoric acid); and / or organic sulfuric acids (e.g., methanesulfonic acid, ethanesulfonic acid, isethionate salts, etc.). In some embodiments, one or more pH adjusters may include divalent or higher acids of the above acids (e.g., sulfuric acid, carbonic acid, phosphoric acid, oxalic acid, etc.), which contain one or more protons (H +The substance may be in the form of a base (e.g., ammonium bicarbonate or ammonium hydrogen phosphate) if it can release ammonium compounds, but any counterion may be used (e.g., a weak basic cation, such as ammonium or triethanolamine).

[0086] In some embodiments, the pH adjuster includes NaOH. In some embodiments, the pH adjuster includes KOH. In some embodiments, the pH adjuster includes NaOH, KOH, or a combination thereof.

[0087] pH of polishing composition The pH adjuster may be present in any amount suitable for achieving the desired Cu, Ta, or TEOS removal rate with sufficient topographic correction and / or flatness. The pH of the polishing composition may be measured using any suitable method known in the art (e.g., using a ThermoFisher Scientific ORION® VERSA STAR PRO® pH / ISE / conductivity / dissolved oxygen multi-parameter bench meter).

[0088] In some embodiments, the pH of the composition is about 11 or less, about 10.5 or less, about 10 or less, about 9.5 or less, about 9 or less, about 8.5 or less, about 8 or less, about 7.5 or less, about 7 or less, about 6.5 or less, about 6 or less, about 5.5 or less, about 5 or less, about 4.5 or less, about 4 or less, about 3.5 or less, about 3 or less, about 2.5 or less, about 2 or less, about 1.5 or less, about 1 or less, or any two of these values, and / or any range or value between any two of these values.

[0089] In some embodiments, the pH of the composition is about 1 or higher, about 1.5 or higher, about 2 or higher, about 2.5 or higher, about 3 or higher, about 3.5 or higher, about 4 or higher, about 4.5 or higher, about 5 or higher, about 5.5 or higher, about 6 or higher, about 6.5 or higher, about 7 or higher, about 7.5 or higher, about 8 or higher, about 8.5 or higher, about 9 or higher, about 9.5 or higher, about 10 or higher, about 10.5 or higher, about 11 or higher, or includes any two of these values ​​and / or any range or value between any two of these values.

[0090] In some embodiments, the pH of the composition is approximately 1 to approximately 11.0, approximately 1 to approximately 10.5, approximately 1 to approximately 10.0, approximately 1 to approximately 9.5, approximately 1 to approximately 9.0, approximately 1 to approximately 8.5, approximately 1 to approximately 8.0, approximately 1.5 to approximately 11.0, approximately 1.5 to approximately 10.5, approximately 1.5 to approximately 10.0, approximately 1.5 to approximately 9.5, approximately 1.5 to approximately 9.0, approximately 1.5 to approximately 8.5, approximately 1.5 to approximately 8.0, approximately 2.0 to approximately 11.0, approximately 2.0 to approximately 10.5, approximately 2.0 to approximately 10.0, approximately 2.0 to approximately 9.5, approximately 2.0 to approximately 9.0, approximately 2.0 to approximately 8.5, approximately 2.0 to approximately 8.0, approximately 9.0 to approximately 11.0, approximately 8.0 to approximately 12.0, approximately 7.0 to approximately 13.0, or any range or value that includes any two of these values ​​and / or any range or value between any two of these values.

[0091] liquid carrier The polishing compositions according to this disclosure may include a liquid carrier. The liquid carrier of the polishing composition is not particularly limited. In some embodiments, the liquid carrier is water, for example, deionized water. The liquid carrier may also be an aqueous solution containing, for example, a suitable pH adjuster. In some embodiments, the liquid carrier may include one or more organic solvents, for example, alcohol compounds, such as aliphatic alcohols having 2 to 6 carbon atoms and glycol ethers having 3 to 10 carbon atoms. Examples of aliphatic alcohols having 2 to 6 carbon atoms include ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, tert-butanol, pentanol, hexanol, ethylene glycol, propylene glycol, 1,3-butanediol, 1,4-butanediol, 1,5-pentanediol, 1,6-hexanediol, glycerin, 1,2,4-butanetriol, 1,2,6-hexanetriol, erythritol, D-threitol, L-threitol, D-arabinitol, L-arabinitol, ribitol, xylitol, mannitol, and sorbitol. Examples of glycol ethers having 3 to 10 carbon atoms include methyl glycol, methyl diglycol, methyl triglycol, isopropyl glycol, isopropyl diglycol, butyl glycol, butyl diglycol, butyl triglycol, isobutyl glycol, isobutyl diglycol, hexyl glycol, hexyl diglycol, 2-ethylhexyl glycol, 2-ethylhexyl diglycol, aryl glycol, phenyl glycol, phenyl diglycol, benzyl glycol, methyl propylene glycol, methyl propylene diglycol, methyl propylene triglycol, propyl propylene glycol, propyl propylene diglycol, butyl propylene glycol, butyl propylene diglycol, and phenyl propylene glycol. In some embodiments, 80% or more, 85% or more, 90% or more, 95% or more, or 99% or more by weight of the liquid carrier contained in the polishing composition consists of water.

[0092] Additional ingredients In some embodiments, the composition may contain other additives at any concentration. However, it is desirable not to add unnecessary components that may cause surface defects. Therefore, if any other additives are present, it is desirable that they be present at relatively low concentrations (e.g., 0.1% by weight or less, 0.05% by weight or less, 0.01% by weight or less, 0.005% by weight or less, 0.001% by weight or less, 0.0005% by weight or less, 0.0001% by weight or less, 0.0001% by weight to 0.1% by weight, 0.0001% by weight to 0.01% by weight, or 0.0001% by weight to 0.001% by weight, etc.). Other examples of additives include preservatives, antifungal agents, biocides (e.g., isothiazolinones, e.g., methylisothiazolinone ("MIT"), benzisothiazolinone ("BIT"), 2-methyl-4-isothiazolin-3-one, etc.), dispersants (additives that improve the redispersibility of abrasive particles once deposited), abrasive particles other than those mentioned above, surfactants other than those mentioned above, chelating agents, reducing agents, and oil-soluble gases.

[0093] Method for manufacturing an abrasive composition The method for producing the polishing composition according to the present invention is not particularly limited, and can be obtained, for example, by stirring and mixing each component in water. Details of each component are as described above. The temperature when mixing each component is not particularly limited, but 10°C to 40°C is preferred, and heating may be used to increase the dissolution rate. The mixing time is also not particularly limited as long as uniform mixing is achieved.

[0094] Polishing method In another embodiment, which may be combined with any other aspect or embodiment, the Disclosure provides a method for polishing a substrate surface, wherein the substrate surface comprises one or more of Cu, Ta, SiCN, and TEOS, and the method comprises polishing the substrate surface by applying a polishing composition described in the above aspect or embodiment to the substrate surface.

[0095] In another embodiment, which may be combined with any other aspect or embodiment, the Disclosure relates to a method for polishing a substrate surface, wherein the substrate surface comprises two or more of Cu, Ta, SiCN, and TEOS, and the method comprises the steps of: bringing the substrate surface into contact with an abrasive composition and a polishing pad of any embodiment disclosed herein; and moving the polishing pad relative to the substrate surface while bringing the abrasive composition into contact with the substrate surface, wherein the A2 / A3 ratio is 0.85 or greater. In some embodiments, the substrate surface comprises Cu and TEOS. In some embodiments, the substrate surface comprises Cu, Ta, SiCN, and TEOS. In some embodiments, the substrate surface comprises Cu, Ta, and TEOS.

[0096] Flatness The polishing compositions according to this disclosure achieve a high degree of flatness on patterned substrates (e.g., patterned substrates comprising TEOS, Cu, and Ta). Referring to Figure 2, flatness can be determined by measuring the width of the top of the TEOS feature (A2) and the height of the top of the TEOS feature relative to the top of the adjacent Ta or Cu feature (A1). Assuming the width of the TEOS feature (A3) is known, Equation 2 is given by: Flatness=(A3-A2)×(0.5×A1) (2) The flatness is calculated using [this method].

[0097] In some embodiments, the polishing step achieves a flatness of the substrate surface of 20 or less, and the flatness is defined by (A3-A2)×(0.5×A1). In some embodiments, the flatness is 10 or less. In some embodiments, the flatness is about 20 or less, about 19 or less, about 18 or less, about 17 or less, about 16 or less, about 15 or less, about 14 or less, about 13 or less, about 12 or less, about 11 or less, about 10 or less, about 9 or less, about 8 or less, about 7 or less, about 6 or less, about 5 or less, about 4 or less, about 3 or less, about 2 or less, about 1 or less, or any two of these values ​​and / or any range or value between any two of these values. In some embodiments, the flatness is about 90 or less, about 80 or less, about 70 or less, about 60 or less, about 50 or less, about 40 or less, or about 30 or less.

[0098] In some embodiments, the A2 / A3 ratio is approximately 0.85 or greater, approximately 0.87 or greater, approximately 0.89 or greater, approximately 0.91 or greater, approximately 0.93 or greater, approximately 0.94 or greater, approximately 0.96 or greater, or any two of these values, and / or any range or value between any two of these values. In some embodiments, the A2 / A3 ratio is less than 1.00. In some embodiments, the A2 / A3 ratio is approximately 50 or greater, approximately 55 or greater, approximately 60 or greater, approximately 65 or greater, approximately 70 or greater, approximately 75 or greater, approximately 80 or greater, approximately 85 or greater, approximately 90 or greater, approximately 95 or greater, approximately 96 or greater, approximately 97 or greater, approximately 98 or greater, approximately 99 or greater, or any two of these values, and / or any range or value between any two of these values.

[0099] removal speed In some embodiments, the polishing composition according to the Disclosure has a TEOS removal rate (RR) of approximately 10 nm / min or more, approximately 15 nm / min or more, approximately 20 nm / min or more, approximately 25 nm / min or more, approximately 30 nm / min or more, approximately 35 nm / min or more, approximately 40 nm / min or more, approximately 45 nm / min or more, approximately 50 nm / min or more, approximately 55 nm / min or more, approximately 60 nm / min or more, approximately 65 nm / min or more, approximately 70 nm / min or more, approximately 75 nm / min or more, approximately 80 nm / min or more, approximately 85 nm / min or more, approximately 90 nm / min or more, approximately 95 nm / min or more, approximately 100 nm / min or more, or any two of these values, and / or any range or value between any two of these values. TEOS ) achieves. In some embodiments, the polishing compositions according to the Disclosure include a TEOS removal rate (RR) of about 90 nm / min or less, about 80 nm / min or less, about 70 nm / min or less, about 60 nm / min or less, or any two of these values, and / or any range or value between any two of these values. TEOS ) achieve.

[0100] In some embodiments, the polishing composition according to the Disclosure has a Cu removal rate (RR) of approximately 30 nm / min or more, approximately 35 nm / min or more, approximately 40 nm / min or more, approximately 45 nm / min or more, approximately 50 nm / min or more, approximately 55 nm / min or more, approximately 60 nm / min or more, approximately 65 nm / min or more, approximately 70 nm / min or more, approximately 75 nm / min or more, approximately 80 nm / min or more, approximately 85 nm / min or more, approximately 90 nm / min or more, approximately 95 nm / min or more, approximately 100 nm / min or more, or any two of these values, and / or any range or value between any two of these values. Cu ) achieve. In some embodiments, the polishing compositions according to the present disclosure include a Cu removal rate (RR) of about 90 nm / min or less, about 80 nm / min or less, about 70 nm / min or less, about 60 nm / min or less, or any two of these values, and / or any range or value between any two of these values. Cu ) achieve.

[0101] In some embodiments, the polishing composition according to the Disclosure has a Ta removal rate (RR) of approximately 30 nm / min or more, approximately 35 nm / min or more, approximately 40 nm / min or more, approximately 45 nm / min or more, approximately 50 nm / min or more, approximately 55 nm / min or more, approximately 60 nm / min or more, approximately 65 nm / min or more, approximately 70 nm / min or more, approximately 75 nm / min or more, approximately 80 nm / min or more, approximately 85 nm / min or more, approximately 90 nm / min or more, approximately 95 nm / min or more, approximately 100 nm / min or more, or any two of these values, and / or any range or value between any two of these values. Ta ) achieve. In some embodiments, the polishing compositions according to the present disclosure include a Ta removal rate (RR) of about 120 nm / min or less, about 100 nm / min or less, about 80 nm / min or less, about 60 nm / min or less, or any two of these values, and / or any range or value between any two of these values. Ta ) achieve.

[0102] In some embodiments, the polishing composition according to the Disclosure has a SiCN removal rate (RR) of approximately 10 nm / min or more, approximately 15 nm / min or more, approximately 20 nm / min or more, approximately 25 nm / min or more, approximately 30 nm / min or more, approximately 35 nm / min or more, approximately 40 nm / min or more, approximately 45 nm / min or more, approximately 50 nm / min or more, approximately 55 nm / min or more, approximately 60 nm / min or more, approximately 65 nm / min or more, approximately 70 nm / min or more, approximately 75 nm / min or more, approximately 80 nm / min or more, approximately 85 nm / min or more, approximately 90 nm / min or more, approximately 95 nm / min or more, approximately 100 nm / min or more, or any two of these values, and / or any range or value between any two of these values. SiCN ) achieve.

[0103] The present invention encompasses the following embodiments and forms.

[0104] 1. An abrasive composition comprising: an abrasive having an average particle size (MPS) of 100 nm to 150 nm; a phosphate surfactant; an electronic conductivity (EC) control agent; an organic acid; and a water-soluble polymer, wherein the ratio of the concentration of the abrasive to the concentration of the phosphate surfactant is 50 or more and less than 1040.

[0105] 2. The polishing composition described in 1. above, comprising a corrosion inhibitor.

[0106] 3. The polishing composition according to 1. or 2. above, wherein the abrasive has a particle size distribution of 0.60 or less, defined by (D90-D10) / D50.

[0107] 4. The polishing composition according to any one of 1. to 3. above, wherein the abrasive contains particles having an aspect ratio of 1.1 or less.

[0108] 5. The polishing composition according to any one of 1. to 4. above, wherein the phosphate surfactant comprises a polyoxyethylene alkylphenyl ether phosphate or a polyoxyethylene alkenyl ether phosphate.

[0109] 6. The polishing composition according to any one of 1 to 5 above, wherein the organic acid comprises a carboxyl group and a hydroxyl group.

[0110] 7. The polishing composition according to any one of 1. to 6. above, wherein the EC control agent comprises a salt of the organic acid.

[0111] 8. The polishing composition according to any one of 1. to 7. above, wherein the water-soluble polymer contains a polysaccharide.

[0112] 9. An abrasive composition according to any one of items 1 to 8 above, further comprising an oxidizing agent.

[0113] 10. The polishing composition according to 9. above, wherein the oxidizing agent contains hydrogen peroxide.

[0114] 11. A method for polishing the surface of a substrate, wherein the substrate surface comprises two or more of Cu, Ta, SiCN, and TEOS, and the method comprises the steps of: bringing the substrate surface into contact with a polishing composition and polishing pad described in any of 1. to 10. above; and moving the polishing pad relative to the substrate surface while the polishing composition is in contact with the substrate surface, wherein the ratio of A2 to A3 is 0.85 or greater.

[0115] 12. The method according to 11, wherein the polishing step achieves a flatness of the substrate surface of 90 or less, and the flatness is defined by (A3-A2)×(0.5×A1). [Examples]

[0116] material and method Preparation of polishing compositions To investigate the effect of the type and concentration of surfactants on the polishing properties of the polishing compositions according to this disclosure, polishing compositions containing silica polishing agents (see Table 1) were prepared and used to evaluate the removal rate of TEOS and Ta and Cu films deposited on a silicon wafer having a thermal oxide layer derived from TEOS, along with the flatness obtained on a substrate having Ta and Cu lines separated by a TEOS spacer.

[0117] The polishing compositions used in the examples described herein were prepared by adding deionized water, 0.1% by weight of benzotriazole (BTA) as a corrosion inhibitor, 0.2% by weight of an EC control agent, a phosphate surfactant (see Table 2), 0.018% by weight of pullulan as a water-soluble polymer, 0.1% by weight of citric acid as an organic acid, 1.0% by weight of H2O2 (30% by weight in water) as an oxidizing agent, and 5.2% by weight of silica abrasive (see Table 1) while mixing, and finally adding deionized water to obtain the final weight. In the examples in which pullulan was used, the weight-average molecular weight of the pullulan was 200,000. All weight percentages are reported as percentages of the final weight. The pH of the composition was adjusted by monitoring the pH while adding potassium hydroxide and / or citric acid as pH adjusters until the pH of the selected composition (e.g., 10) was obtained.

[0118] [Table 1]

[0119] Abrasives 1-7 are composed of residual metals such as K, as shown in Table 1 above. + It is a high-purity product with a low concentration of K. + The concentration value is measured by elemental analysis using ICP.

[0120] pH measurement The pH of the polishing composition according to this disclosure was determined using a Thermo-Fisher Scientific VSTAR94 pH meter. Measurement of average particle size / particle size distribution The average particle size and particle size distribution of various abrasives in the polishing composition according to this disclosure were determined using ZETASIZER® (Malvern Panalytical).

[0121] Measurement of removal rate To determine the polishing speed, the following substrates were subjected to polishing compositions.

[0122] For measuring removal rate: • Ta: Ta (advantiv) at 2000 Å on thermal oxide on a Si substrate; • Cu: 10,000 Å epitaxial Cu (Advantiv) on TiN on a thermal oxide on silicon; • TEOS: 10,000 Å TEOS (Advantiv) on a Si substrate For measuring topographic correction: • Patterned wafer: MIT754 mask (7000 Å Cu; 100 Å Ta; 3000 Å TEOS) The polishing speed was determined using the following polishing conditions.

[0123] · Polishing machine: 300mm polishing machine (Reflexion LK); • Polishing pad: Fujibo H8000; Conditioner: 3M A82; Downforce: 1.0 psi; • Grinding plate rotation: 73 rpm; Head rotation: 63 rpm; Slurry flow rate: 200 mL / min.

[0124] To evaluate the removal rate achieved by the polishing composition, the film thickness before and after polishing was measured using the Resmap resistivity mapping system (Creative Design Engineering, Inc.) for Ta and Cu films, or the KLA ASET-F5X Pro optical thin film measurement system (KLA Corporation) for TEOS substrates. Topography correction and flatness measurement Referring to Figures 1A-1F, to evaluate topography correction, a patterned Si wafer with a 3000 Å thermal oxide (derived from TEOS) was patterned with trenches for depositing Cu lines. As shown in Figure 1A, in the "1 / 9" pattern, the trenches were 1 μm wide and 9 μm apart. A Ta barrier layer (100 Å) was deposited across the entire patterned wafer, followed by a 7000 Å Cu layer. Referring to Figure 1B, the Cu film was polished using a Cu polishing slurry, leaving the barrier layer and Cu lines in the trenches. The patterns tested in the following examples (see Tables 2-4) were "1.5 / 0.5" patterns with a trench width of 1.5 μm and a trench spacing of 0.5 μm.

[0125] Next, a patterned wafer having Cu lines was subjected to barrier layer polishing using the polishing composition according to the present disclosure, according to the conditions described above. Referring to Figure 1C, when the barrier layer polishing conditions have ideal Ta / TEOS and Cu / TEOS selectivity, the upper part of the TEOS layer on the unpatterned portion of the surface ("TEOS reference plane") becomes nearly horizontal to the upper part of the Cu layer after barrier layer polishing. Referring to Figures 1D-1F, when the barrier layer polishing conditions have non-ideal Ta / TEOS and Cu / TEOS selectivity, a height difference occurs between the upper part of the TEOS layer on the unpatterned portion of the surface ("TEOS reference plane") and the upper part of the Cu layer after barrier layer polishing. As a result, erosion, pultrusion, and dishing occur.

[0126] In practice, height differences typically occur after Cu polishing, and the barrier polishing composition is evaluated for topographic correction (nm). Therefore, referring to Figure 1F, if the height difference between the TEOS reference plane and the top of the Cu layer after barrier layer polishing is smaller than the height difference before barrier layer polishing, the topography is said to be corrected, and the topographic correction (before (nm) - after (nm)) represents a positive value. Similarly, if the height difference between the TEOS reference plane and the top of the Cu layer after barrier layer polishing is larger than the height difference before barrier layer polishing, the topographic correction (before (nm) - after (nm)) represents a negative value. Therefore, the greater the "positive" or "smaller the negative" the topographic correction (nm), the better the given polishing composition can correct (or avoid further deterioration of) non-ideal topography. On the other hand, the smaller the topography correction (nm), the less positive or larger the negative the given polishing composition becomes in its ability to correct (or avoid further deterioration of) non-ideal topography. For the purposes of this disclosure, a positive topography value (nm) indicates that the top of the Cu layer is below the TEOS reference plane.

[0127] To evaluate topographic correction, surface topography was measured using a Park Systems XE-120 AFM (Park Systems).

[0128] Referring to Figure 2, surface topography was measured using a Park Systems XE-120 AFM (Park Systems) to determine the flatness, and the width of the top of the TEOS feature (A2) and the height of the top of the TEOS feature relative to the top of the adjacent Ta or Cu feature (A1) were measured. Assuming the width of the TEOS feature (A3) is approximately 500 nm, the following equation 2: Flatness=(A3-A2)×(0.5×A1) (2) The flatness is calculated using [this method]. [Examples]

[0129] Effect of topography control agents (surfactants) on the flatness of polished Ta / Cu / TEOS patterned substrates To evaluate the effect of the type and concentration of surfactants on polishing performance, the polishing compositions shown in Table 2 were prepared according to the procedure described in Example 1, and their removal rates of Ta, Cu, and TEOS, topographic correction, and flatness were evaluated according to the method disclosed in Example 1. Although the type and concentration of phosphate surfactants varied, all polishing compositions tested contained the following components at the following concentrations.

[0130] Deionized water; • 5.2% by weight of abrasive 3 (see Table 1); • 0.5% by weight of KOH; • 0.1% by weight of citric acid; 0.1% by weight of BTA; • 0.018% by weight of pullulan; • 0.2% by weight of ammonium citrate (dibase); • 1.0% by weight of H2O2 (30%).

[0131] As shown in Table 2, polishing compositions comprising abrasive 3 (unmodified colloidal silica, MPS = 120 nm), polyoxyethylene (7) nonylphenyl phosphate (e.g., 0.01% by weight, 0.05% by weight, and 0.1% by weight, respectively, in slurries 3, 4, and 5), polyoxyethylene (4) nonylphenyl phosphate (slurry 11), polyoxyethylene (10) nonylphenyl phosphate (slurry 12), and polyoxyethylene (10) oleyl ether phosphate (slurry 8) showed excellent flatness performance (e.g., less than 10).

[0132] Furthermore, slurries containing surfactants at concentrations of 0.01% to 0.1% by weight (e.g., slurries 3 to 5) showed significantly improved flatness performance compared to slurries containing surfactants at concentrations of less than 0.01% by weight (e.g., slurries 1 to 2). [Examples]

[0133] Effect of abrasive type on polishing performance on Ta / Cu / TEOS patterned substrate To evaluate the effect of abrasive type and size on polishing performance, the polishing compositions shown in Table 3 were prepared according to the procedure described in Example 1, and their Ta, Cu, and TEOS removal rates, topographic correction, and flatness were evaluated according to the method disclosed in Example 1. Although the type and size of abrasive varied, all polishing compositions tested contained the following components at the following concentrations.

[0134] Deionized water; • 5.2% by weight of abrasives 1-7 (see Table 1); • 0.5% by weight of KOH; • 0.1% by weight of citric acid; 0.1% by weight of BTA; • 0.018% by weight of pullulan; • 0.2% by weight of ammonium citrate (dibase); • 1.0 wt% H2O2 (30%); and • 0.01% by weight of polyoxyethylene(7) nonylphenyl phosphate.

[0135] As shown in Table 3, polishing compositions containing abrasives with an MPS of 120 nm (abrasive 3 and abrasive 4; slurry 3 and 15) exhibited the best flatness performance (8, 10) along with Cu, Ta, and TEOS removal rates at least equivalent to compositions containing other types of abrasives, as well as the best topography correction performance among the tested abrasives. [Examples]

[0136] Effect of EC control agent type on polishing performance on Ta / Cu / TEOS patterned substrate To evaluate the effect of different types of EC control agents (salts) on polishing performance, polishing compositions shown in Table 4 were prepared according to the procedure described in Example 1, and their removal rates of Ta, Cu, and TEOS, topographic correction, and flatness were evaluated according to the method disclosed in Example 1. Although the type of EC control agent varied, all polishing compositions tested contained the following components at the following concentrations.

[0137] Deionized water; • 5.2% by weight of abrasive 3 (see Table 1); • 0.05% by weight of POE(7) nonylphenyl phosphate; • 0.5% by weight of KOH; • 0.1% by weight of citric acid; 0.1% by weight of BTA; • 0.018% by weight of pullulan; • 0.2% by weight of EC control agent (Table 4); and • 1.0% by weight of H2O2 (30%).

[0138] As shown in Table 4, the polishing composition (slurry 4) containing ammonium citrate (dibase) and whose anion is the same as that present in organic acids (i.e., citric acid) achieved a significantly flatter surface than the polishing compositions (slurries 19-22) containing different EC control agents that contained anions different from those present in organic acids.

[0139] Furthermore, the pH of all slurries (slurries 1-5, 8-22) was adjusted to 10.0.

[0140] [Table 2]

[0141] [Table 3]

[0142] [Table 4]

[0143] While specific embodiments have been illustrated and described, it should be understood that modifications and alterations may be made by those skilled in the art without departing from the broader aspects of the art as defined in the following claims.

[0144] The compositions and methods described herein exemplary may be suitably carried out in the absence of any elements or limitations not specifically disclosed herein. Therefore, terms such as “comprising,” “including,” and “containing” should be interpreted broadly and without limitation. Furthermore, the terms and expressions used herein are for illustrative purposes only, not limitation, and the use of such terms and expressions is not intended to exclude any equivalent or part of any of the indicated and described features. It is recognized that various modifications are possible within the scope of the claimed disclosure. Therefore, while this disclosure is specifically disclosed by preferred embodiments and optional features, any modifications and variations of the disclosure disclosed herein and carried out herein may be conceivable by those skilled in the art, and such modifications and variations should be understood to be within the scope of the invention.

[0145] This disclosure is described extensively and generally within this specification. Each of the narrower groups of species and subspecies that fall within the scope of the general disclosure also forms part of the method. This includes the general description of the method by proviso or negative limitation that excludes any subject from a genus, whether or not the exclusion is specifically cited herein. The Art is not limited in terms of the specific embodiments described in this application, which are intended as one example of individual aspects of the Art. As will be obvious to those skilled in the art, many modifications and variations of the Art are possible without departing from the spirit and scope of the Art. In addition to those enumerated herein, functionally equivalent methods and apparatus within the scope of the Art will be obvious to those skilled in the art from the foregoing description. Such modifications and variations are intended to be within the scope of the Art. It should be understood that the Art is not limited to specific methods, reagents, compounds, compositions or biological systems, which may naturally vary. It should also be understood that the terms used herein are intended only to describe specific embodiments and are not intended to limit them.

[0146] Those skilled in the art will readily recognize that this disclosure is well suited to performing the subject matter and obtaining the results and benefits described herein, as is inherent in this specification. Modifications and other uses of the invention will be conceivable to those skilled in the art. These modifications are included within the spirit of this disclosure and are defined by the claims, which define non-limiting embodiments of this disclosure.

[0147] Furthermore, if any feature or aspect of the present disclosure is described in terms of the Markush group, a person skilled in the art will recognize that the present disclosure is described in terms of any individual component or subgroup of components of the Markush group.

[0148] All documents, articles, publications, patents, patent gazettes, and patent applications cited herein are incorporated herein by reference in their entirety. However, no reference to any document, article, publication, patent, patent gazette, or patent application cited herein should be construed as an endorsement or proposal in any form that they constitute valid prior art or form part of common general knowledge in any country of the world.

[0149] This application is based on U.S. Provisional Patent Application No. 63 / 698658, filed on 25 September 2024, the disclosures of which are incorporated herein by reference in their entirety.

[0150] Other embodiments are defined in the following claims.

Claims

1. Abrasives having an average particle size (MPS) of 100 nm to 150 nm; Phosphate surfactants and; Electronic conductivity (EC) control agents; Organic acids and; Water-soluble polymers; Includes, The ratio of the concentration of the abrasive to the concentration of the phosphate surfactant is 50 or more and less than 1040. Polishing composition.

2. The polishing composition according to claim 1, comprising a corrosion inhibitor.

3. The polishing composition according to claim 1, wherein the abrasive has a particle size distribution of 0.60 or less, defined by (D90-D10) / D50.

4. The polishing composition according to claim 1, wherein the abrasive comprises particles having an aspect ratio of 1.1 or less.

5. The polishing composition according to claim 1, wherein the phosphate surfactant comprises a polyoxyethylene alkylphenyl ether phosphate or a polyoxyethylene alkenyl ether phosphate.

6. The polishing composition according to claim 1, wherein the organic acid comprises a carboxyl group and a hydroxyl group.

7. The polishing composition according to claim 1, wherein the EC control agent comprises a salt of the organic acid.

8. The polishing composition according to claim 1, wherein the water-soluble polymer contains a polysaccharide.

9. The polishing composition according to claim 1, further comprising an oxidizing agent.

10. The polishing composition according to claim 9, wherein the oxidizing agent comprises hydrogen peroxide.

11. A method for polishing the surface of a substrate, wherein the substrate surface contains two or more of Cu, Ta, SiCN, and TEOS, and the method is The steps include bringing the surface of the substrate into contact with the polishing composition and polishing pad described in claim 1; The process involves moving the polishing pad relative to the substrate surface while bringing the polishing composition into contact with the substrate surface; Includes, A2 / A3 is 0.85 or higher. method.

12. The method according to claim 11, wherein the polishing step achieves a flatness of the substrate surface of 90 or less, and the flatness is defined by (A3 - A2) × (0.5 × A1).

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