Control device, substrate processing device, control program, and temperature control program

Abstract

This prevents incorrect correction values ​​from being set when using a radiation thermometer on a substrate processing device to control the temperature of a wafer. [Solution] The management device includes a registration unit that registers a correction table in which the instrument error data of each radiation temperature measuring instrument relative to a reference radiation temperature measuring instrument and information identifying each radiation temperature measuring instrument are associated, and a transmission unit that, when it receives a request for a correction table including information identifying the specific radiation temperature measuring instrument from a substrate processing device to which a specific radiation temperature measuring instrument is attached, transmits a correction table corresponding to the information identifying the specific radiation temperature measuring instrument to the requesting substrate processing device.

Description

Technical Field

[0001] The present disclosure relates to a management device, a substrate processing device, a management program, and a temperature control program.

Background Art

[0002] In a substrate processing apparatus, for example, when performing temperature control of a wafer using a detachable radiation thermometer or the like, an operator attaches one of the maintained radiation thermometers to the substrate processing apparatus and sets a correction value according to the instrument error of the radiation thermometer. As a result, the substrate processing apparatus can execute temperature control of the wafer based on highly accurate temperature data. On the other hand, when configured to manually set the correction value as described above, there is a possibility that a setting error or the like may occur by the operator, and an incorrect correction value may be set.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure avoids setting an incorrect correction value when attaching a radiation thermometer to a substrate processing apparatus and performing temperature control of a wafer.

Means for Solving the Problems

[0005] A management device according to an aspect of the present disclosure has, for example, the following configuration. That is, a registration unit that registers a correction table in which instrument error data of each radiation thermometer with respect to a reference radiation thermometer and information for identifying each radiation thermometer are associated with each other; The system includes a transmitting unit that, upon receiving a request for a correction table containing information identifying a specific radiation temperature measuring instrument from a substrate processing apparatus to which a specific radiation temperature measuring instrument is attached, transmits a correction table corresponding to the information identifying the specific radiation temperature measuring instrument to the requesting substrate processing apparatus. [Effects of the Invention]

[0006] According to this disclosure, when a radiation temperature measuring instrument is attached to a substrate processing device to perform wafer temperature control, it becomes possible to avoid setting an incorrect correction value. [Brief explanation of the drawing]

[0007] [Figure 1] This figure shows an example of the system configuration of the management system. [Figure 2] This diagram shows an overview of the processing at each phase in the management system. [Figure 3A] The first figure shows an example of the configuration of a substrate processing apparatus for film deposition. [Figure 3B] The second figure shows an example of the configuration of a substrate processing apparatus for film deposition. [Figure 3C] This figure shows an example of how a radiation thermometer is mounted on a substrate processing device. [Figure 3D] This figure shows an example of operation of a radiation thermometer attached to a substrate processing device. [Figure 4] This figure shows an example of the hardware configuration of a control device in a substrate processing device. [Figure 5] This figure shows an example of the functional configuration of the temperature control unit in the preparation phase of a control device in a substrate processing device. [Figure 6A] This figure shows an example of reference radiation temperature data. [Figure 6B] This figure shows an example of radiation temperature data and an example of a correction table. [Figure 7] This is an example flowchart showing the flow of preparation processes performed during the preparation phase of a substrate processing device. [Figure 8]It is a diagram showing an example of the functional configuration of the temperature control unit in the measurement phase of the control device included in the substrate processing apparatus. [Figure 9] It is an example of a flowchart showing the flow of the measurement process of the substrate processing apparatus executed in the measurement phase. [Figure 10] It is a diagram showing an example of the hardware configuration of the management device. [Figure 11] It is a diagram showing an example of the functional configuration of the management device. [Figure 12] It is a flowchart showing the flow of the management process by the management device. [Figure 13] It is a diagram showing a specific example of the process by the display unit of the management device. [Figure 14] It is a sequence diagram showing an example of the process of the entire management system.

Mode for Carrying Out the Invention

[0008] Hereinafter, each embodiment will be described with reference to the accompanying drawings. In this specification and the drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant descriptions are omitted.

[0009] [First Embodiment] <System Configuration of the Management System> First, the system configuration of a management system including a management device and a substrate processing apparatus according to the first embodiment will be described. FIG. 1 is a diagram showing an example of the system configuration of the management system.

[0010] As shown in FIG. 1, the management system 100 includes a management device 110 and a plurality of substrate processing apparatuses (in the example of FIG. 1, N substrate processing apparatuses 120_1 to 120_N). In the management system 100, the management device 110 and each of the plurality of substrate processing apparatuses are communicably connected via a network 140.

[0011] Further, as shown in FIG. 1, the management system 100 includes a plurality of radiation temperature measuring devices (in the example of FIG. 1, M + 1 radiation temperature measuring devices including the reference radiation temperature measuring device 130_0 and radiation temperature measuring devices 130_1 to 130_M) that are detachable from each of the N substrate processing apparatuses.

[0012] Among these, the reference radiation temperature measuring device 130_0 is a reference radiation temperature measuring device that is used when the instrument error data of each of the plurality of radiation temperature measuring devices 130_1 to 130_M is acquired. The substrate processing apparatus 120_1 acquires the instrument error data by calculating the difference value between the radiation temperature data measured by each of the radiation temperature measuring devices 130_1 to 130_M and the reference radiation temperature data measured by the reference radiation temperature measuring device 130_0.

[0013] In this embodiment, when acquiring the instrument error data, as described above, it is described that the radiation temperature measuring device is attached to the substrate processing apparatus 120_1. However, the substrate processing apparatus to which the radiation temperature measuring device is attached when acquiring the instrument error data is not limited to the substrate processing apparatus 120_1, and any of the other substrate processing apparatuses 120_2 to 120_N may be used.

[0014] The radiation temperature measuring devices 130_1 to 130_M are, for example, maintained radiation temperature measuring devices. Before being used for wafer temperature control in any of the substrate processing apparatuses 120_2 to 120_N, a correction table is generated in advance based on the instrument error data with the reference radiation temperature measuring device 130_0. Each generated correction table is registered in the management device 110 by the substrate processing apparatus 120_1.

[0015] The substrate processing device 120_1 is used to acquire error data between the reference infrared thermometer 130_0 and infrared thermometers 130_1 to 130_M. The substrate processing device 120_1 generates a correction table for each infrared thermometer by associating the serial number of the infrared thermometer with the error data acquired for each infrared thermometer. In other words, each correction table generated by the substrate processing device 120_1 associates the error data of each infrared thermometer 130_1 to 130_M with the reference infrared thermometer 130_0 and the serial number of each infrared thermometer 130_1 to 130_M.

[0016] When wafer temperature control is performed, one of the infrared thermometers 130_1 to 130_M is attached to each substrate processing unit 120_2 to 120_N. The attachment of any particular infrared thermometer to any substrate processing unit is arbitrary.

[0017] Each substrate processing device 120_2 to 120_N acquires the serial number of the radiation temperature measuring device when the radiation temperature measuring device is attached, and requests a correction table corresponding to the acquired serial number from the management device 110.

[0018] Each substrate processing device 120_2 to 120_N acquires a correction table transmitted from the control device 110, and when temperature data is measured by the attached radiation thermometer, it uses the acquired correction table to perform correction. Each substrate processing device 120_2 to 120_N then uses the corrected temperature data to perform wafer temperature control.

[0019] The management device 110 registers each correction table transmitted from the substrate processing device 120_1. Furthermore, when a request for a correction table is transmitted from any of the substrate processing devices 120_2 to 120_N, the management device 110 reads the correction table corresponding to the serial number included in the request and transmits it to the originating substrate processing device.

[0020] In this way, the management system 100 generates correction tables for each of the radiation thermometers 130_1 to 130_M by associating serial numbers with pre-acquired error data, and registers them with the management device 110. Then, each time one of the radiation thermometers 130_1 to 130_M is attached to one of the substrate processing devices 120_2 to 120_N, the management system 100 identifies the correction table for the attached radiation thermometer based on its serial number. The management system 100 also transmits the identified correction table to the corresponding substrate processing device. As a result, the substrate processing devices 120_2 to 120_N can correct the temperature data measured by the attached radiation thermometer using the appropriate correction table.

[0021] In other words, the management system 100 automatically manages each of the correction tables for the multiple radiation thermometers 130_1 to 130_M attached to the substrate processing equipment 120_2 to 120_N using their serial numbers. As a result, the management system 100 eliminates errors that may occur when setting correction values ​​for the substrate processing equipment manually, and prevents the setting of incorrect correction values.

[0022] <Processing of each phase in the management system> Next, an overview of the processing in each phase of the management system 100 will be described. Figure 2 is a diagram showing an overview of the processing in each phase of the management system. As shown in Figure 2, the processing in the management system 100 can be broadly divided into a preparation phase, a registration phase, and a measurement phase.

[0023] In the preparation phase, the substrate processing apparatus 120_1, • Reference radiation temperature data of the wafer measured by the reference radiation temperature measuring instrument 130_0, • The radiation temperature data of the wafer, measured using one of the radiation thermometers 130_1 to 130_M, The data is obtained and the difference value is calculated. As a result, the substrate processing device 120_1 obtains the error data and generates a correction table.

[0024] During the registration phase, the management device 110 registers the correction tables and other data for the radiation temperature measuring instruments 130_1 to 130_M, which are transmitted from the substrate processing device 120_1.

[0025] During the measurement phase, when any of the radiation temperature measuring instruments 130_1 to 130_M is attached to the substrate processing apparatus 120_2 to 120_N, • Obtain the serial number of the installed infrared thermometer and send a request for a correction table containing the obtained serial number to the management device 110. Receive and store the requested correction table. • The temperature data measured by the attached radiation thermometer is corrected using the stored correction table. • Perform wafer temperature control using the corrected temperature data.

[0026] <Configuration of substrate processing equipment> Next, we will describe the configuration of the substrate processing apparatus 120_1 to 120_N that perform wafer temperature control. Here, we will describe the case where the substrate processing apparatus 120_1 to 120_N is a substrate processing apparatus that performs wafer film deposition.

[0027] (1) Configuration of a substrate processing apparatus for film deposition Figures 3A and 3B are the first and second diagrams showing examples of the configuration of a substrate processing apparatus for film deposition. Since the substrate processing apparatuses 120_1 to 120_N all have similar configurations, the configuration of the substrate processing apparatus 120_2, to which the radiation temperature measuring instrument 130_1 is attached, will be described here.

[0028] As shown in Figure 3A, the substrate processing apparatus 120_2 for film deposition comprises a generally circular, flat processing container 11 and a disc-shaped rotary table 12 horizontally mounted inside the processing container 11. The processing container 11 is set in an atmospheric environment and consists of a top plate 13 and a container body 14 that forms the side walls 14a and bottom 14b of the processing container 11. The sealing member 11a is a member for keeping the inside of the processing container 11 airtight, and the cover 14c is a member that closes the central part of the container body 14. The rotational drive mechanism 12a rotates the rotary table 12 in the circumferential direction. The rotational drive mechanism 12a inputs signals regarding the rotational position and rotational speed of the rotary table 12 to the control device 5.

[0029] The radiation thermometer 130_1 is mounted above the slit 41 (Figure 3B). The radiation thermometer 130_1 measures the temperature data of the wafer W placed on the rotary table 12 while the rotary table 12 is rotating.

[0030] Multiple programs are installed in the control device 5, and the control device 5 realizes the temperature control unit 300 by executing the temperature control program among these programs. During the film deposition process, the temperature control unit 300 controls the heater drive means 6 and performs temperature control of the wafer W based on the temperature data measured by the heater thermocouple 3 and the temperature data measured by the radiation thermometer 130_1.

[0031] As shown in Figure 3B, five recesses 16 are formed on the surface of the rotary table 12 along the direction of rotation of the rotary table 12 (arrow 27). A shutter 18 that can be opened and closed is attached to the transport opening 17. When the transport mechanism 2A enters the processing container 11 from the transport opening 17 while holding the wafer W, a lifting pin (not shown) protrudes from a hole in the recess 16 facing the transport opening 17 onto the rotary table 12 and pushes up the wafer W. In this way, the wafer W is transferred between the recess 16 and the transport mechanism 2A.

[0032] On the rotary table 12, rod-shaped first reaction gas nozzle 21, separation gas nozzle 22, second reaction gas nozzle 23, and separation gas nozzle 24 are arranged in this order circumferentially, extending from the outer circumference of the rotary table 12 toward the center. These gas nozzles 21 to 24 have openings at the bottom and supply gas along the diameter of the rotary table 12. The first reaction gas nozzle 21 discharges BTBAS (bistarchar butylaminosilane) gas, and the second reaction gas nozzle 23 discharges O3 (ozone) gas. Separation gas nozzles 22 and 24 discharge N2 (nitrogen) gas.

[0033] The top plate 13 of the processing container 11 is provided with two fan-shaped protrusions 25 that project downward, and the protrusions 25 are spaced apart in the circumferential direction. The separation gas nozzles 22 and 24 are each embedded in the protrusions 25 and are provided to divide the protrusions 25 in the circumferential direction. The first reaction gas nozzle 21 and the second reaction gas nozzle 23 are provided away from the respective protrusions 25.

[0034] A heater 20 is provided below the rotary table 12. The heater 20 is an example of a heating means for heating the wafer W placed on the rotary table 12. Specifically, the heater 20 is arranged concentrically with respect to the rotation center of the rotary table 12. As the heater 20, resistance heaters such as metal wire heaters, molybdenum heaters, and carbon wire heaters, or induction heaters can be used.

[0035] The heating region of the processing container 11 is divided into multiple regions (three regions Za, Zb, and Zc in the example of Figure 3A) to control the temperature in the radial direction of the rotary table 12. The heater 20 is divided into three region heating heaters 20a, 20b, and 20c, corresponding to each region Za, Zb, and Zc, and each is configured to be controlled individually. Note that the number of regions is not limited to three; there may be one or two regions, or four or more regions.

[0036] Near each of the region heating heaters 20a, 20b, and 20c, three heater thermocouples 3a, 3b, and 3c are provided to measure the temperature. Hereafter, the three heater thermocouples 3a, 3b, and 3c will also simply be referred to as heater thermocouple 3.

[0037] The heater thermocouple 3 measures the temperature of the heater 20. Specifically, one end of each heater thermocouple 3a, 3b, and 3c is inserted below the container body 14, airtightly passing through the bottom 14b of the container body 14, and positioned below the rotary table 12. The other end of each heater thermocouple 3a, 3b, and 3c is connected to the control device 5, and the temperature data measured by each heater thermocouple 3a, 3b, and 3c is input to the control device 5.

[0038] (2) Example of mounting a radiation thermometer Next, we will describe an example of mounting the radiation thermometer 130_1 attached to the substrate processing apparatus 120_2. Figure 3C shows an example of mounting the radiation thermometer attached to the substrate processing apparatus.

[0039] As shown in Figure 3C, the top plate 13 is provided with a slit 41 extending radially from the rotary table 12, and a lower window 42 and an upper window 43 are provided to cover the top and bottom of the slit 41. The lower window 42 and the upper window 43 are made of a material such as sapphire so as to transmit infrared rays emitted from the surface side of the rotary table 12, allowing temperature data to be measured by the radiation thermometer 130_1.

[0040] In Figure 3C, the height H from the surface of the rotary table 12 to the lower end of the radiation thermometer 130_1 is, for example, 500 mm. The radiation thermometer 130_1 guides the infrared radiation emitted from the temperature measurement area of ​​the rotary table 12 to the detection unit 301, which will be described later, and the detection unit 301 acquires temperature data corresponding to the amount of infrared radiation. The acquired temperature data is transmitted to the control device 5.

[0041] (3) Example of operation of a radiation thermometer Next, an example of the operation of the radiation thermometer 130_1 attached to the substrate processing apparatus 120_2 will be described. Figure 3D shows an example of the operation of the radiation thermometer attached to the substrate processing apparatus.

[0042] As shown in Figure 3D, the radiation thermometer 130_1 includes a rotating body 302 consisting of a servo motor that rotates at 50 Hz. The rotating body 302 has a triangular shape in plan view and rotates around a rotation axis 306. As a result, the rotating body 302 reflects the infrared radiation from the temperature measurement area 310 on the rotating table 12 containing the wafer W using one of the reflective surfaces 303 to 305, as indicated by the arrows in the figure, and guides it to the detection unit 301. The rotating body 302 also scans the position of the temperature measurement area 310 by moving it in the radial direction of the rotating table 12.

[0043] The detection unit 301 is configured to detect the temperature of predetermined locations (for example, 128 locations) in the radial direction of the rotary table 12 by continuously capturing infrared light from a single reflective surface a predetermined number of times (for example, 128 times). As the rotating body 302 rotates, the reflective surfaces 303 to 305 are sequentially positioned in the path of the infrared light, allowing the scan to be repeatedly performed from the inside to the outside of the rotary table 12.

[0044] For example, the scanning speed of the infrared thermometer 130_1 is approximately 150 times per second. The temperature measurement area 310 has a diameter of approximately 5 mm. The scanning range extends from a position further inside the recess 16 on the rotary table 12 where the wafer W is placed, to the outer edge of the rotary table 12.

[0045] The scan by the radiation thermometer 130_1 is performed while the rotary table 12 is rotating. The rotation speed of the rotary table 12 is, for example, 240 revolutions per minute.

[0046] (4) Example of operation of a substrate processing apparatus equipped with a radiation thermometer during film deposition Next, an example of the operation of the entire substrate processing apparatus 120_2, to which the radiation thermometer 130_1 is attached, during the film deposition process will be explained, mainly with reference to Figures 3A and 3B.

[0047] When performing a film deposition process on a wafer W, the substrate processing apparatus 120_2 opens a shutter 18 provided on the transport port 17 in Figure 3B. As a result, the wafer W is transferred from outside the processing container 11 via the transport mechanism 2A through the transport port 17 into the recess 16 of the rotary table 12. This transfer is performed by raising and lowering a lifting pin (not shown) from the bottom side of the processing container 11 through a through hole in the bottom surface of the recess 16 when the recess 16 stops in a position facing the transport port 17. This transfer of wafer W is performed by intermittently rotating the rotary table 12, thereby positioning the wafer W in the five recesses 16 of the rotary table 12.

[0048] Next, the substrate processing apparatus 120_2 closes the shutter 18 and uses a vacuum pump (not shown) connected to the exhaust port 26 to completely drain the processing container 11. The substrate processing apparatus 120_2 discharges N2 gas, which is a separation gas nozzle, at a predetermined flow rate and supplies N2 gas at a predetermined flow rate to the space 28 above the central region of the rotary table 12. Accordingly, the substrate processing apparatus 120_2 adjusts the pressure inside the processing container 11 to a preset pressure using a pressure adjustment means (not shown) connected to the exhaust port 26.

[0049] Next, the substrate processing apparatus 120_2 heats the wafer W to, for example, 400°C using the heater 20 while rotating the rotary table 12 clockwise, and supplies BTBAS gas from the first reaction gas nozzle 21 and O3 gas from the second reaction gas nozzle 23.

[0050] The substrate processing apparatus 120_2 supplies BTBAS gas, which is the raw material gas, from the first reaction gas nozzle 21 when the wafer W passes through the first processing area P1. As a result, BTBAS gas is adsorbed onto the surface of the wafer W. The substrate processing apparatus 120_2 then purges the wafer W, which has BTBAS gas adsorbed on its surface, by rotating the rotary table 12, passing it through a separation area D1 having a separation gas nozzle 22, and then returns it to the first processing area P1. As a result, BTBAS gas is supplied to the wafer W from the first reaction gas nozzle 21, and BTBAS gas is adsorbed onto the surface of the wafer W.

[0051] As described above, the substrate processing apparatus 120_2 supplies BTBAS gas and O3 gas into the processing container 11 by rotating the rotary table 12 multiple times in a continuous manner. As a result, SiO2, which is a reaction product, is deposited on the surface of the wafer W, and an SiO2 film (silicon oxide film) is formed.

[0052] During the film deposition process on the wafer W, temperature data for the region heating heaters 20a, 20b, and 20c are measured by heater thermocouples 3a, 3b, and 3c corresponding to regions Za, Zb, and Zc, and input to the control device 5. In addition, temperature data for the wafer W is measured by the radiation thermometer 130_1 and input to the control device 5. The temperature data measured by the radiation thermometer 130_1 is corrected using a correction table.

[0053] The temperature control unit 300 of the control device 5 controls the heater driving means 6 based on the temperature data measured by the heater thermocouple 3 and the corrected temperature data measured by the radiation thermometer 130_1, which has been corrected by the correction table. As a result, the heater driving means 6 controls the respective region heating heaters 20a, 20b, and 20c to perform temperature control of the wafer W surface.

[0054] <Hardware configuration of the control device in the substrate processing device> Next, the hardware configuration of the control devices 5 in each of the substrate processing devices 120_1 to 120_N will be described. Figure 4 shows an example of the hardware configuration of the control device. As shown in Figure 4, the control device 5 includes a processor 401, memory 402, auxiliary storage device 403, connection device 404, and communication device 405. Each piece of hardware included in the control device 5 is interconnected via a bus 406.

[0055] The processor 401 has various computing devices such as a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). The processor 401 reads various programs (for example, a temperature control program) into the memory 402 and executes them.

[0056] Memory 402 has main memory devices such as ROM (Read Only Memory) and RAM (Random Access Memory). The processor 401 and memory 402 form a so-called computer, and the computer realizes various functions by having the processor 401 execute various programs read from memory 402.

[0057] The auxiliary storage device 403 stores various programs and various information used when these programs are executed by the processor 401.

[0058] The connection device 404 is a connection device that connects to each of the devices 411 within the substrate processing apparatus (operating device, display device, rotary drive mechanism 12a, heater thermocouple 3, radiation temperature measuring instrument 130_1, heater driving means 6, etc.).

[0059] The communication device 405 is a communication device for sending and receiving various information between the management device 110 and the control device 5.

[0060] <Details of the control device functions of the substrate processing equipment (preparation phase)> Next, as a detailed description of the functions of the control device 5 in the preparation phase, we will explain the detailed functions of the temperature control unit 300 implemented in the control device 5 of the substrate processing apparatus 120_1 in the preparation phase.

[0061] (1) Functional configuration of the temperature control unit Figure 5 shows an example of the functional configuration of the temperature control unit in the preparation phase of a control device in a substrate processing apparatus.

[0062] As shown in Figure 5, during the preparation phase, the temperature control unit 300 functions as a temperature data acquisition unit 501, a serial number acquisition unit 502, an instrument error data acquisition unit 503, a correction table generation unit 504, and a correction table transmission unit 505.

[0063] When a reference radiation temperature measuring instrument 130_0 is attached to the substrate processing apparatus 120_1, the temperature data acquisition unit 501 acquires reference radiation temperature data from the reference radiation temperature measuring instrument 130_0.

[0064] Furthermore, if a radiation thermometer (in this case, a radiation thermometer 130_1) that is subject to the generation of a correction table is attached to the substrate processing apparatus 120_1, the temperature data acquisition unit 501 acquires radiation temperature data from the radiation thermometer 130_1.

[0065] The reference radiation temperature data acquired by the temperature data acquisition unit 501 includes temperature data for each region of the wafer where temperature control has been performed in each temperature range. The temperature data acquisition unit 501 notifies the error data acquisition unit 503 of the acquired reference radiation temperature data.

[0066] The radiant temperature data acquired by the temperature data acquisition unit 501 includes temperature data for each region of the wafer where temperature control has been performed in each temperature range. The temperature data acquisition unit 501 notifies the error data acquisition unit 503 of the acquired radiant temperature data.

[0067] When the reference radiation temperature measuring instrument 130_0 is attached to the substrate processing device 120_1, the serial number acquisition unit 502 acquires information (serial number) that identifies the reference radiation temperature measuring instrument 130_0 from the reference radiation temperature measuring instrument 130_0.

[0068] Furthermore, when the radiation thermometer 130_1, which is the target of correction table generation, is attached to the substrate processing device 120_1, the serial number acquisition unit 502 acquires information (serial number) that identifies the radiation thermometer 130_1 from the radiation thermometer 130_1.

[0069] The serial number acquisition unit 502 notifies the instrument error data acquisition unit 503 of the acquired serial number.

[0070] The instrument error data acquisition unit 503 is an example of an acquisition unit, and when a serial number identifying the reference radiation temperature measuring instrument 130_0 is notified, it stores the reference radiation temperature data notified by the temperature data acquisition unit 501 along with the serial number in the reference temperature storage unit 510.

[0071] The instrument error data acquisition unit 503 calculates the difference between the radiation temperature data notified by the temperature data acquisition unit 501 and the reference radiation temperature data stored in the reference temperature storage unit 510 when the serial number identifying the radiation temperature measuring instrument 130_1 to be used for generating the correction table is notified.

[0072] Specifically, the error data acquisition unit 503 calculates the difference between the temperature data for each temperature band and each region of the wafer included in the reference radiation temperature data and the temperature data for each temperature band and each region of the wafer included in the radiation temperature data. As a result, the error data acquisition unit 503 acquires error data including the difference values ​​for each temperature band and each region of the wafer as the error data of the radiation temperature measuring instrument 130_1.

[0073] The error data acquisition unit 503 notifies the correction table generation unit 504 of the acquired error data of the radiation temperature measuring instrument 130_1, along with the serial number of the radiation temperature measuring instrument 130_1.

[0074] The correction table generation unit 504 generates a correction table by associating the error data of the radiation temperature measuring instrument 130_1 with the serial number of the radiation temperature measuring instrument 130_1, which is notified by the error data acquisition unit 503. In the correction table, the difference values ​​for each temperature band and each region of the wafer included in the error data become the "correction values". The correction table generation unit 504 notifies the correction table transmission unit 505 of the generated correction table.

[0075] The correction table transmission unit 505 is an example of a transmission unit. When the correction table is notified by the correction table generation unit 504, it accesses the management device 110 and transmits the correction table for the radiation temperature measuring instrument 130_1. The correction table transmission unit 505 also transmits the reference radiation temperature data stored in the reference temperature storage unit 510 to the management device 110.

[0076] (2) Reference radiation temperature data and correction table Next, we will explain the reference radiation temperature data stored in the reference temperature storage unit 510 by the temperature control unit 300 during the preparation phase, and the correction table generated by the temperature control unit 300. Figure 6A shows an example of reference radiation temperature data.

[0077] As shown in Figure 6A, the reference radiation temperature data 600 includes a serial number that identifies the reference radiation temperature measuring instrument 130_0. The example in Figure 6A shows that the serial number that identifies the reference radiation temperature measuring instrument 130_0 is "0000".

[0078] Furthermore, as shown in Figure 6A, the reference radiation temperature data 600 includes temperature data for each temperature zone and each region of the wafer, measured by the reference radiation temperature measuring instrument 130_0. The example in Figure 6A shows that temperature data for five regions of the wafer is included for each of the five temperature zones.

[0079] Figure 6B shows an example of radiation temperature data and an example of a correction table, illustrating radiation temperature data 610 measured by radiation temperature measuring instrument 130_1 and a correction table 620 generated based on the radiation temperature data 610.

[0080] As shown in Figure 6B, the radiation temperature data 610 includes temperature data for each temperature zone and each region of the wafer, measured by the radiation thermometer 130_1. The example in Figure 6B shows that temperature data for five regions of the wafer is included for each of the five temperature zones.

[0081] Furthermore, as shown in Figure 6B, the correction table 620 includes a serial number that identifies the radiation thermometer 130_1. The example in Figure 6B shows that the serial number that identifies the radiation thermometer 130_1 is "0001".

[0082] Furthermore, as shown in Figure 6B, the correction table 620 includes error data in which the difference values ​​for each temperature band and each region of the wafer, calculated based on the reference radiation temperature data 600 and the radiation temperature data 610, are included as correction values. The example in Figure 6B shows that the error data includes the difference values ​​for each of the five regions of the wafer in each of the five temperature bands as correction values.

[0083] <Processing flow of substrate processing equipment in the preparation phase> Next, we will explain the flow of the preparation process for the substrate processing apparatus 120_1, which is performed during the preparation phase. Figure 7 is a flowchart showing the flow of the preparation process for the substrate processing apparatus, which is performed during the preparation phase.

[0084] In step S701, the worker attaches the reference radiation temperature measuring instrument 130_0 to the substrate processing apparatus 120_1.

[0085] In step S702, the substrate processing apparatus 120_1 obtains the serial number of the reference radiation temperature measuring instrument 130_0. Subsequently, the substrate processing apparatus 120_1 starts controlling the wafer temperature, and the reference radiation temperature measuring instrument 130_0 measures the temperature data of each region of the wafer for each temperature range. As a result, the substrate processing apparatus 120_1 obtains the reference radiation temperature data measured by the reference radiation temperature measuring instrument 130_0.

[0086] In step S703, the substrate processing device 120_1 stores the acquired reference radiation temperature data, including the serial number.

[0087] In step S704, after removing the reference radiation temperature measuring instrument 130_0, the operator attaches the radiation temperature measuring instrument 130_1, which is the subject of the correction table generation, to the substrate processing apparatus 120_1.

[0088] In step S705, the substrate processing apparatus 120_1 obtains the serial number of the radiation thermometer 130_1. Subsequently, the substrate processing apparatus 120_1 starts controlling the wafer temperature, and the radiation thermometer 130_1 measures the temperature data of each region of the wafer for each temperature range. As a result, the substrate processing apparatus 120_1 obtains the radiation temperature data measured by the radiation thermometer 130_1.

[0089] In step S706, the substrate processing apparatus 120_1 obtains error data by calculating the difference between the reference radiation temperature data and the radiation temperature data.

[0090] In step S707, the substrate processing device 120_1 generates a correction table by associating the error data with the serial number of the radiation temperature measuring instrument 130_1.

[0091] In step S708, the substrate processing device 120_1 transmits the reference radiation temperature data, including the serial number, and the generated correction table to the management device 110.

[0092] <Details of the control device functions of the substrate processing equipment (measurement phase)> Next, as a detailed description of the functions of the control device 5 in the measurement phase, we will explain the details of the functions of the temperature control unit 300 implemented in the control device 5 of the substrate processing apparatus 120_2 in the measurement phase.

[0093] (1) Functional configuration of the temperature control unit Figure 8 shows an example of the functional configuration of the temperature control unit in the measurement phase of the control device of the substrate processing apparatus. As described above, in the measurement phase, the temperature control unit 300 controls the heater driving means 6 based on the temperature data measured by the heater thermocouple 3 and the corrected temperature data measured by the radiation thermometer 130_1 and corrected by the correction table. However, for the sake of simplicity, the functions of processing the temperature data measured by the heater thermocouple 3 and controlling the heater driving means 6 are omitted here.

[0094] As shown in Figure 8, during the measurement phase, the temperature control unit 300 functions as a temperature data acquisition unit 801, a serial number transmission unit 802, a correction table reception unit 803, and a correction unit 804.

[0095] When the radiation thermometer 130_1 is attached to the substrate processing device 120_2, the temperature data acquisition unit 801 acquires temperature data from the radiation thermometer 130_1 and notifies the correction unit 804.

[0096] The serial number transmission unit 802 is an example of a transmission unit. When the radiation thermometer 130_1 is attached to the substrate processing device 120_2, the transmission unit 802 obtains a serial number that identifies the radiation thermometer 130_1 from the radiation thermometer 130_1. The serial number transmission unit 802 requests a correction table for the radiation thermometer 130_1 from the management device 110 by sending a request for a correction table that includes the obtained serial number to the management device 110.

[0097] When the correction table receiving unit 803 receives a correction table from the management device 110 in response to the serial number transmission unit 802 sending a request for a correction table, it stores the received correction table in the correction table storage unit 810 (an example of a storage unit).

[0098] The correction unit 804 reads the correction table stored in the correction table storage unit 810 and corrects the temperature data notified by the temperature data acquisition unit 801. Specifically, the correction unit 804 identifies the temperature range and region of the temperature data notified by the temperature data acquisition unit 801, and corrects the temperature data using the correction values ​​(difference values) of the identified temperature range and region from the correction values ​​(difference values) included in the error data.

[0099] As a result, the heater drive means 6 can perform temperature control of the wafer based on corrected temperature data that has been corrected according to the instrument error between the radiation temperature measuring instrument 130_1 and the reference radiation temperature measuring instrument 130_0.

[0100] (2) Correction Table Next, we will describe the correction table stored in the correction table storage unit 810 by the temperature control unit 300 during the measurement phase. As mentioned above, when the radiation temperature measuring instrument 130_1 is attached to the substrate processing apparatus 120_2, the correction table storage unit 810 stores a correction table for the radiation temperature measuring instrument 130_1. Details of the correction table for the radiation temperature measuring instrument 130_1 are shown, for example, as the correction table 620 in Figure 6B, and have already been explained, so we will omit the explanation here.

[0101] <Processing flow of substrate processing equipment in the measurement phase> Next, we will describe the measurement process flow of the substrate processing apparatus 120_2, which is performed during the measurement phase. Figure 9 is an example of a flowchart showing the measurement process flow of the substrate processing apparatus, which is performed during the measurement phase.

[0102] In step S901, the operator attaches the radiation temperature measuring instrument 130_1 to the substrate processing apparatus 120_2 that performs film deposition.

[0103] In step S902, the substrate processing device 120_2 obtains the serial number of the radiation temperature measuring instrument 130_1 and sends a request for a correction table including the obtained serial number to the management device 110.

[0104] In step S903, the substrate processing device 120_2 receives and stores the correction table for the radiation temperature measuring instrument 130_1, which was sent from the management device 110 in response to the transmission of a correction table request.

[0105] In step S904, the substrate processing apparatus 120_2 starts the film deposition process. As a result, the radiation thermometer 130_1 starts measuring the wafer temperature.

[0106] In step S905, the substrate processing apparatus 120_2 acquires temperature data measured by the radiation thermometer 130_1 and corrects the acquired temperature data using a correction table.

[0107] In step S906, the substrate processing apparatus 120_2 performs wafer temperature control using the corrected temperature data.

[0108] In step S907, the substrate processing apparatus 120_2 determines whether or not to continue measuring the wafer temperature. If it determines to continue measuring the wafer temperature (i.e., if the answer in step S907 is YES), it returns to step S905.

[0109] On the other hand, if it is determined in step S907 not to continue measuring the wafer temperature (i.e., if the answer is NO in step S907), the substrate processing apparatus 120_2 terminates the measurement process.

[0110] <Hardware configuration of the management device> Next, the hardware configuration of the management device 110 will be described. Figure 10 shows an example of the hardware configuration of the management device. As shown in Figure 10, the management device 110 includes a processor 1001, memory 1002, auxiliary storage device 1003, connection device 1004, communication device 1005, and drive device 1006. Each piece of hardware included in the management device 110 is interconnected via a bus 1007.

[0111] The processor 1001 has various computing devices such as a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). The processor 1001 reads various programs (for example, management programs, etc.) into the memory 1002 and executes them.

[0112] Memory 1002 has main memory devices such as ROM (Read Only Memory) and RAM (Random Access Memory). The processor 1001 and memory 1002 form a so-called computer, and the computer realizes various functions by having the processor 1001 execute various programs read into memory 1002.

[0113] The auxiliary storage device 1003 stores various programs and various information used when these programs are executed by the processor 1001.

[0114] The connection device 1004 is a connection device that connects to external devices (such as the operating device 1011 and the display device 1012).

[0115] The communication device 1005 is a communication device for sending and receiving various information between the substrate processing devices 120_1 to 120_N and the management device 110.

[0116] The drive device 1006 is a device for setting the recording medium 1013. The recording medium 1013 here includes media that record information optically, electrically, or magnetically, such as CD-ROMs, flexible disks, and magneto-optical disks. The recording medium 1013 may also include semiconductor memory that records information electrically, such as ROMs and flash memory.

[0117] The various programs to be installed on the auxiliary storage device 1003 are installed, for example, when the distributed recording medium 1013 is set in the drive device 1006 and the various programs recorded on the recording medium 1013 are read. Alternatively, the various programs to be installed on the auxiliary storage device 1003 may be downloaded from the network 140 via the communication device 1005 and installed.

[0118] <Functional Configuration of the Management Device> Next, the functional configuration of the management device 110 will be described. Figure 11 shows an example of the functional configuration of the management device. As described above, a management program is installed in the management device 110, and when this program is executed, the management device 110 functions as a registration unit 1101, a transmission unit 1102, and a display unit 1103.

[0119] During the preparation phase, the registration unit 1101 receives reference radiation temperature data transmitted from the substrate processing device 120_1. The registration unit 1101 also receives correction tables for radiation temperature measuring instruments 130_1 to 130_M transmitted from the substrate processing device 120_1. During the registration phase, the registration unit 1101 registers the reference radiation temperature data and each correction table in the correction table registration unit 1110.

[0120] During the measurement phase, the transmitting unit 1102 receives a request for a correction table from one of the substrate processing devices 120_2 to 120_N. The transmitting unit 1102 reads the correction table corresponding to the serial number included in the correction table request from the correction table registration unit 1110. The transmitting unit 1102 then transmits the read correction table to the requesting substrate processing device.

[0121] The display unit 1103 displays the reference radiation temperature data and each correction table registered in the correction table registration unit 1110.

[0122] <Processing flow by the control device during the registration phase to the measurement phase> Next, we will explain the flow of management processing performed by the management device 110 in each phase from the registration phase to the measurement phase. Figure 12 is a flowchart showing the flow of management processing by the management device.

[0123] In step S1201, the control device 110 determines whether or not a correction table or reference radiation temperature data has been transmitted from the substrate processing device 120_1. If it is determined in step S1201 that a correction table or reference radiation temperature data has not been transmitted (i.e., the answer is NO in step S1201), the process proceeds to step S1203.

[0124] On the other hand, if it is determined in step S1201 that the correction table or reference radiation temperature data has been transmitted (if the answer in step S1201 is YES), the process proceeds to step S1202.

[0125] In step S1202, the control device 110 registers the correction table or reference radiation temperature data transmitted from the substrate processing device 120_1.

[0126] In step S1203, the management device 110 determines whether a correction table request has been sent from any of the substrate processing devices 120_2 to 120_N. If it is determined in step S1203 that no correction table request has been sent (i.e., the answer is NO in step S1203), the process proceeds to step S1207.

[0127] On the other hand, if it is determined in step S1203 that a request for a correction table has been sent (if the answer in step S1203 is YES), the process proceeds to step S1204.

[0128] In step S1204, the management device 110 reads the correction table corresponding to the serial number included in the correction table request.

[0129] In step S1205, the control device 110 identifies the substrate processing device that requested the correction table.

[0130] In step S1206, the control device 110 transmits the read correction table to the identified substrate processing device.

[0131] In step S1207, the management device 110 determines whether to continue the management process. If it determines in step S1207 to continue the management process (if the answer is YES in step S1207), it returns to step S1201. On the other hand, if it determines in step S1207 not to continue the management process (if the answer is NO in step S1207), it terminates the management process.

[0132] <Specific examples of processing by the display unit of the control device> Next, a specific example of processing by the display unit 1103 of the control device 110 will be described. As described above, the display unit 1103 displays the reference radiation temperature data and each correction table registered in the correction table registration unit 1110. Figure 13 is a diagram showing a specific example of processing by the display unit of the control device.

[0133] In Figure 13, screen 1300 is an example of a screen displayed on the display device 1012 when the display unit 1103 of the management device 110 operates. As shown in Figure 13, the screen 1300 displayed on the display device 1012 when the display unit 1103 operates includes: • Button 1310 to instruct the display of reference radiation temperature data. • Button 1320 to instruct the display of the correction table. • Area 1330 for displaying attribute information of reference radiation temperature data or attribute information of the correction table. • Area 1340 for displaying reference radiation temperature data or instrument error data included in the correction table. It includes.

[0134] When button 1310 is pressed, area 1330 displays attribute information of the reference radiation temperature data, and area 1340 displays temperature data for each temperature band and each region of the wafer included in the reference radiation temperature data. Specifically, area 1330 displays: • Serial number of reference infrared thermometer 130_0, • The date on which the reference radiation temperature data was measured. • When generating the correction table, the type of processing container 11 (chamber) of the substrate processing apparatus 120_1 to which the reference radiation temperature measuring instrument 130_0 is attached, The following will be displayed. In addition, region 1340 will display temperature data for each temperature range and each region of the wafer measured by the reference radiation temperature measuring instrument 130_0.

[0135] When button 1320 is pressed, the attribute information of the correction table is displayed in area 1330, and the instrument error data of the correction table is displayed in area 1340. Specifically, in area 1330, • Serial number of the radiation thermometer from which the correction table was generated. • The date the correction table was generated, • The type of processing container 11 (chamber) of the substrate processing apparatus 120_1 to which the radiation thermometer is attached when generating the correction table, The following will be displayed. In addition, area 1340 will display the correction values ​​(difference values) for each temperature range and each region of the wafer, which are included in the error data of the correction table for the radiation temperature measuring instrument.

[0136] In the example shown in Figure 13, when displaying the error data of the correction table for the radiation temperature measuring instrument in region 1340, the reference temperature data for each temperature range is also displayed.

[0137] <Overall processing flow of the management system> Next, we will explain the processing flow of the entire management system 100, from the preparation phase to the measurement phase. Figure 14 is a sequence diagram showing an example of the processing of the entire management system. In the example of Figure 14, the management system 100 is... • Equipped with four substrate processing devices, Using one reference infrared thermometer 130_0 and three infrared thermometers 130_1 to 130_3 (instrument names: Instrument A, B, C), the process from the preparation phase to the measurement phase is performed. Let me explain the situation.

[0138] In step S1301, the substrate processing device 120_1 performs preparation processing (Figure 7) using the reference radiation temperature measuring device 130_0 and the radiation temperature measuring device 130_1 (measuring device A). As a result, the substrate processing device 120_1 transmits the reference radiation temperature data and a correction table for the radiation temperature measuring device 130_1 (referred to here as correction table A) to the control device 110.

[0139] In step S1310, which is performed in parallel with step S1301, the control device 110 performs a control process (Figure 12) and registers the reference radiation temperature data and the correction table A for the radiation temperature measuring instrument 130_1.

[0140] In step S1302, the substrate processing apparatus 120_2 performs a measurement process (Figure 9) using the radiation temperature measuring instrument 130_1 (measuring instrument A). As a result, the substrate processing apparatus 120_2 sends a request for a correction table to the control device 110 and receives correction table A for the radiation temperature measuring instrument 130_1 from the control device 110. The substrate processing apparatus 120_2 then performs wafer temperature control based on the corrected temperature data derived from the received correction table A.

[0141] In step S1310, which is performed in parallel with step S1302, the control device 110 performs a control process (Figure 12) and, in response to a request for a correction table, transmits a correction table A for the radiation temperature measuring instrument 130_1 to the substrate processing device 120_2.

[0142] In step S1303, the substrate processing device 120_1 performs preparation processing (Figure 7) using the radiation temperature measuring instrument 130_2 (measuring instrument B), and transmits a correction table for the radiation temperature measuring instrument 130_2 (referred to here as correction table B) to the control device 110.

[0143] In step S1310, which is performed in parallel with step S1303, the control device 110 performs a control process (Figure 12) and registers a correction table B for the radiation temperature measuring instrument 130_2.

[0144] In step S1304, the substrate processing apparatus 120_3 performs a measurement process (Figure 9) using the radiation temperature measuring instrument 130_2 (measuring instrument B). As a result, the substrate processing apparatus 120_3 sends a request for a correction table to the control device 110 and receives correction table B for the radiation temperature measuring instrument 130_2 from the control device 110. The substrate processing apparatus 120_3 then performs wafer temperature control based on the corrected temperature data derived from the received correction table B.

[0145] In step S1310, which is performed in parallel with step S1304, the control device 110 performs a control process (Figure 12) and, in response to a request for a correction table, transmits a correction table B for the radiation temperature measuring instrument 130_2 to the substrate processing device 120_3.

[0146] In step S1305, the substrate processing device 120_1 performs preparation processing (Figure 7) using the radiation temperature measuring instrument 130_3 (measuring instrument C), and transmits a correction table for the radiation temperature measuring instrument 130_3 (referred to here as correction table C) to the control device 110.

[0147] In step S1310, which is performed in parallel with step S1305, the control device 110 performs a control process (Figure 12) and registers a correction table C for the radiation temperature measuring instrument 130_3.

[0148] In step S1306, the substrate processing apparatus 120_4 performs a measurement process (Figure 9) using the radiation temperature measuring instrument 130_3 (measuring instrument C). As a result, the substrate processing apparatus 120_4 sends a request for a correction table to the control device 110 and receives the correction table C for the radiation temperature measuring instrument 130_3 from the control device 110. The substrate processing apparatus 120_4 then performs wafer temperature control based on the corrected temperature data derived from the received correction table C.

[0149] In step S1310, which is performed in parallel with step S1306, the control device 110 performs a control process (Figure 12) and, in response to a request for a correction table, transmits a correction table C for the radiation temperature measuring instrument 130_3 to the substrate processing device 120_4.

[0150] <Summary> As is clear from the above description, the management device 110 according to the first embodiment is • Obtain a correction table that associates the error data of each infrared thermometer with that of a reference infrared thermometer, and the serial number of each infrared thermometer. When a request for a correction table, including the serial number of a specific infrared thermometer, is received from a substrate processing device to which a specific infrared thermometer is attached, the correction table corresponding to the serial number of the specific infrared thermometer is transmitted to the requesting substrate processing device.

[0151] Thus, the management device 110 according to the first embodiment registers the error data of the radiation temperature measuring instrument as a correction table, associating it with the serial number. This allows the management device 110 according to the first embodiment to set an appropriate correction table for the substrate processing device to which the radiation temperature measuring instrument is attached.

[0152] Furthermore, the substrate processing apparatus 120_1 according to the first embodiment is • Of the multiple radiation temperature measuring instruments, the reference radiation temperature measuring instrument is attached to the substrate processing device to acquire the reference radiation temperature data. • Of the multiple infrared thermometers, all except the reference infrared thermometer are attached to the substrate processing device to acquire measured infrared temperature data. • Instrument error data is obtained by calculating the difference between the reference radiation temperature data and the radiation temperature data. • Generate a correction table containing the acquired error data and the serial number of the radiation temperature measuring instrument, and transmit it to a management device that manages correction tables for radiation temperature measuring instruments.

[0153] Thus, the substrate processing apparatus 120_1 according to the first embodiment generates a correction table including the error data and serial number of the radiation temperature measuring instrument and transmits it to the management device. As a result, according to the substrate processing apparatus 120_1 according to the first embodiment, the management device can manage the error data of the radiation temperature measuring instrument and set an appropriate correction table for the substrate processing apparatus to which the radiation temperature measuring instrument is attached.

[0154] Furthermore, the substrate processing apparatus 120_2 according to the first embodiment is • If an infrared thermometer is installed, obtain the serial number of the infrared thermometer. • Send a request for a correction table, including the acquired serial number, to the management device. • Stores the correction table for the radiation temperature measuring instrument, which was received from the management device in response to a request for a correction table being sent. The temperature data measured by the attached infrared thermometer is corrected using a correction table for the infrared thermometer.

[0155] Thus, the substrate processing apparatus 120_2 according to the first embodiment obtains a correction table corresponding to the attached radiation temperature measuring instrument from the control device. As a result, according to the substrate processing apparatus 120_2 according to the first embodiment, an appropriate correction table corresponding to the attached radiation temperature measuring instrument can be set.

[0156] In other words, according to the first embodiment, when a radiation temperature measuring instrument is attached to the substrate processing apparatus to perform wafer temperature control, it becomes possible to avoid setting an incorrect correction value.

[0157] [Second Embodiment] In the first embodiment described above, a case was described in which a serial number is used as information for identifying the radiation thermometer. However, the information for identifying the radiation thermometer may be any information other than a serial number, as long as it is information that can identify the individual radiation thermometer.

[0158] Furthermore, although the first embodiment described above assumes the use of substrate processing apparatus 120_1 when generating the correction table, the correction table may also be generated using substrate processing apparatuses 120_2 to 120_N other than substrate processing apparatus 120_1.

[0159] Furthermore, in the first embodiment described above, the substrate processing apparatus 120_1 was used only in the preparation phase. However, the substrate processing apparatus 120_1 may also be used in the measurement phase.

[0160] Furthermore, in the first embodiment described above, the case in which the radiation thermometer 130_1, on which a correction table was generated in the preparation phase, is attached to the substrate processing apparatus 120_2 in the measurement phase was explained. However, the substrate processing apparatus to which the radiation thermometer 130_1, on which a correction table was generated in the preparation phase, is attached in the measurement phase is not limited to the substrate processing apparatus 120_2, but may be attached to any other substrate processing apparatus.

[0161] Furthermore, in the first embodiment described above, the reference radiation temperature measuring instrument 130_0 is used only in the preparation phase, and no example of using the reference radiation temperature measuring instrument 130_0 in the measurement phase is described. However, the reference radiation temperature measuring instrument 130_0 may also be used in the measurement phase, similar to the radiation temperature measuring instruments 130_1 to 130_M.

[0162] It should be noted that the present invention is not limited to the configurations shown in the above embodiments, including combinations with other elements. These aspects can be modified without departing from the spirit of the present invention and can be appropriately determined according to their application. [Explanation of Symbols]

[0163] 100: Management System 110: Management device 120_1~120_N: Substrate processing equipment 130_0 :Reference radiation temperature measuring device 130_1~130_M: Radiation temperature measuring device 300: Temperature control unit 501: Temperature data acquisition unit 502: Serial number acquisition unit 503: Instrument error data acquisition unit 504: Correction Table Generation Unit 505: Correction Table Transmission Unit 801: Temperature data acquisition unit 802: Serial number transmission unit 803: Correction Table Receiver 804: Correction section 1101: Registration Department 1102: Transmitter 1103:Display section

Claims

1. A registration unit registers a correction table that associates the instrument error data of each radiation temperature measuring instrument with a reference radiation temperature measuring instrument, and information that identifies each radiation temperature measuring instrument. A transmitting unit, upon receiving a request for a correction table containing information identifying a specific radiation thermometer from a substrate processing apparatus to which a specific radiation thermometer is attached, transmits a correction table corresponding to the information identifying the specific radiation thermometer to the requesting substrate processing apparatus. A control device having the following features.

2. The instrument error data for each of the aforementioned radiation temperature measuring instruments relative to the reference radiation temperature measuring instrument is: The aforementioned reference radiation temperature measuring instrument is attached to the substrate processing apparatus, and the measured reference radiation temperature data and The radiation temperature data measured by the aforementioned specific radiation temperature measuring instrument attached to the substrate processing apparatus, It is obtained by calculating the difference value. The control device according to claim 1.

3. The error data of each of the aforementioned radiation temperature measuring instruments includes the difference between the reference radiation temperature data and each of the aforementioned radiation temperature data for each temperature range and each region of the wafer. The control device according to claim 2.

4. The system further includes a display unit that displays the aforementioned reference radiation temperature data and the aforementioned correction table. The control device according to claim 3.

5. An acquisition unit that acquires instrument error data by calculating the difference between reference radiation temperature data measured by a reference radiation temperature measuring instrument attached to a substrate processing apparatus, and radiation temperature data measured by radiation temperature measuring instruments other than the reference radiation temperature measuring instrument, when attached to the substrate processing apparatus. A transmission unit transmits a correction table, which includes the acquired error data and information identifying radiation temperature measuring instruments other than the reference radiation temperature measuring instrument, to a management device that manages correction tables for radiation temperature measuring instruments. A substrate processing apparatus having

6. A transmitting unit that, when a radiation temperature measuring instrument is installed, acquires information identifying the radiation temperature measuring instrument and transmits a request for a correction table including the acquired information to a management device that manages a correction table for the radiation temperature measuring instrument. A storage unit for storing the correction table for the attached radiation thermometer, which was received from the management device in response to the transmission of the correction table request, A correction unit corrects the temperature data measured by the attached radiation thermometer using the stored correction table. A substrate processing apparatus having

7. The correction table includes correction values ​​for temperature data in each temperature range and each region of the wafer. The substrate processing apparatus according to claim 6.

8. The correction unit, The temperature range and wafer region of the temperature data measured by the attached radiation thermometer are identified, and the correction is performed using the correction values ​​for the identified temperature range and wafer region. The substrate processing apparatus according to claim 7.

9. The process involves registering a correction table in which the instrument error data for each infrared thermometer relative to a reference infrared thermometer and information identifying each infrared thermometer are associated. When a request for a correction table containing information identifying the specific radiation thermometer is received from a substrate processing apparatus to which a specific radiation thermometer is attached, the correction table corresponding to the information identifying the specific radiation thermometer is transmitted to the requesting substrate processing apparatus. A management program that causes a computer to execute a command.

10. A step of obtaining instrument error data by calculating the difference between reference radiation temperature data measured by a reference radiation temperature measuring instrument attached to a substrate processing apparatus, and radiation temperature data measured by radiation temperature measuring instruments other than the reference radiation temperature measuring instrument attached to the substrate processing apparatus. The process involves transmitting a correction table, which includes the acquired error data and information identifying radiation temperature measuring instruments other than the reference radiation temperature measuring instrument, to a management device that manages correction tables for radiation temperature measuring instruments. A temperature control program to be executed by a computer.

11. When a radiation temperature measuring device is installed, the process includes obtaining information to identify the radiation temperature measuring device and sending a request for a correction table containing the obtained information to a management device that manages a correction table for the radiation temperature measuring device. A step of storing the correction table for the attached radiation thermometer, which was received from the management device in response to the transmission of the correction table request, The process of correcting the temperature data measured by the attached radiation thermometer using the stored correction table. A temperature control program to be executed by a computer.

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