Semiconductor module and manufacturing method thereof

Abstract

A semiconductor module comprising: a semiconductor chip including a main electrode; a connection conductor electrically connected to the main electrode; a housing portion enclosing the semiconductor chip and at least a part of the connection conductor; an encapsulant filling a space enclosed by the housing portion; and a connection unit fixed to the housing portion. An electrical conduction portion as a part of the connection conductor is exposed from the surface of the encapsulant. The connection unit includes a connection terminal bonded to the electrical conduction portion of the connection conductor, and a support composed separately from the housing portion and supporting the connection terminal.

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor module and a manufacturing method thereof. [Background technology]

[0002] Various semiconductor modules including semiconductor chips such as IGBTs (Insulated Gate Bipolar Transistors) have been proposed. For example, Patent Document 1 discloses a semiconductor module having a structure in which a semiconductor chip and a connection conductor are housed in a frame-shaped terminal case. The connection conductor is a conductor that is directly or indirectly connected to a main electrode of the semiconductor chip. A connection terminal is installed in the terminal case by, for example, insert molding. The connection terminal protrudes inward from the inner wall surface of the terminal case. The space inside the terminal case is filled with a sealant such as epoxy resin. The top surface of the connection conductor is exposed from the surface of the sealant. The part of the connection terminal that protrudes inward from the inner wall surface of the terminal case and the top surface of the connection conductor are joined to each other by, for example, laser welding. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] International Publication No. 2009 / 081723 Summary of the Invention [Problem to be solved by the invention]

[0004] In the technology of Patent Document 1, at the stage of filling the terminal case with the sealing body, the connection terminal protrudes inward from the inner wall surface of the terminal case. That is, when viewed from above in the vertical direction, a part of the sealing body is located behind the connection terminal. Therefore, it is not easy to check, for example, visually, the state of the sealing body directly below the connection terminal (for example, the state of adhesion with the inner wall surface of the terminal case). In consideration of the above circumstances, one aspect of the present disclosure aims to make it possible to easily check the state of the sealing body that seals a semiconductor chip during the manufacturing process of a semiconductor module. [Means for solving the problem]

[0005] In order to solve the above problems, the semiconductor module of the present disclosure comprises a first semiconductor chip including a first main electrode, a connection conductor electrically connected to the first main electrode, a housing part surrounding the first semiconductor chip and the connection conductor, a first sealing body filled in a space surrounded by the housing part, and a connection unit fixed to the housing part, wherein a conductive part that is a part of the connection conductor is exposed from a surface of the first sealing body, and the connection unit includes a first terminal joined to the conductive part of the connection conductor, and a support body configured separately from the housing part and supporting the first terminal.

[0006] In addition, the manufacturing method of a semiconductor module according to the present disclosure includes a first sealing step of filling a space inside a housing portion surrounding a first semiconductor chip including a first main electrode and a connection conductor electrically connected to the first main electrode with a first sealing body so that a conductive portion that is a part of the connection conductor is exposed, and a joining step, which is a step performed after the first sealing step, of fixing a connection unit including a first terminal and a support body supporting the first terminal to the housing portion and joining the conductive portion of the connection conductor to the first terminal. [Brief description of the drawings]

[0007] [Figure 1] 1 is a plan view of a semiconductor module according to a first embodiment. [Diagram 2] 2 is a cross-sectional view taken along line aa in FIG. [Diagram 3] FIG. 2 is a plan view of the semiconductor module from which the connection unit is separated; [Figure 4] 1 is a cross-sectional view of a semiconductor module from which a connection unit is separated; [Diagram 5] 1A to 1C are process diagrams illustrating a method for manufacturing a semiconductor module. [Figure 6] FIG. 11 is a cross-sectional view illustrating the configuration of Comparative Example 1. [Figure 7] FIG. 11 is a plan view of a semiconductor module according to a second embodiment. [Figure 8] 8 is a cross-sectional view taken along the line bb in FIG. 7. [Figure 9] FIG. 4 is an enlarged cross-sectional view of the vicinity of a protrusion. [Figure 10] 3 is an enlarged cross-sectional view of the vicinity of a support in the first embodiment. FIG. [Figure 11] FIG. 11 is a partial cross-sectional view of a semiconductor module according to a third embodiment. [Figure 12] FIG. 11 is a partial cross-sectional view of a semiconductor module according to a fourth embodiment. [Figure 13] 11 is a partial cross-sectional view of a semiconductor module according to aspect A of modified example (1). FIG. [Figure 14] 13 is a partial cross-sectional view of a semiconductor module according to aspect B of modified example (1). FIG. [Figure 15] 13 is a partial cross-sectional view of a semiconductor module according to aspect C of the modified example (2). FIG. [Figure 16] FIG. 11 is a cross-sectional view of a semiconductor module according to a modified example (3). [Figure 17] FIG. 13 is a cross-sectional view of a semiconductor module according to a modified example (5). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] The embodiments for carrying out the present disclosure will be described with reference to the drawings. Note that in each drawing, the dimensions and scale of each element may differ from those of the actual product. The embodiments described below are specific examples assumed when carrying out the present disclosure. Therefore, the scope of the present disclosure is not limited to the following embodiments.

[0009] A: First embodiment A-1: Structure of semiconductor module 100 FIG. 1 is a plan view illustrating the configuration of a semiconductor module 100 in the first embodiment. FIG. 2 is a cross-sectional view of line aa in FIG. 1. As illustrated in FIG. 1 and FIG. 2, in the first embodiment, an X-axis, a Y-axis, and a Z-axis are assumed to be mutually orthogonal. One direction along the X-axis is denoted as the X1 direction, and the opposite direction to the X1 direction is denoted as the X2 direction. Also, one direction along the Y-axis is denoted as the Y1 direction, and the opposite direction to the Y1 direction is denoted as the Y2 direction. Similarly, one direction along the Z-axis is denoted as the Z1 direction, and the opposite direction to the Z1 direction is denoted as the Z2 direction. Viewing any element of the semiconductor module 100 along the Z-axis direction (Z1 direction or Z2 direction) is hereinafter referred to as "planar view".

[0010] In actual use, the semiconductor module 100 may be installed in any direction, but in the following description, for convenience, the Z1 direction is assumed to be the upward direction, and the Z2 direction is assumed to be the downward direction. Therefore, the surface of any element of the semiconductor module 100 facing the Z1 direction may be referred to as the "upper surface", and the surface of the element facing the Z2 direction may be referred to as the "lower surface". As illustrated in FIG. 1, in the following description, a virtual plane (hereinafter referred to as the "reference plane") R parallel to the YZ plane is assumed. The reference plane R is located at the center of the semiconductor module 100 in the X-axis direction. In other words, the reference plane R is a plane that divides the semiconductor module 100 into two equal parts in the X-axis direction.

[0011] 1 and 2, a semiconductor module 100 of the first embodiment includes a semiconductor unit 10, a housing 20, a base portion 30, and a sealing portion 40. Note that, for convenience, the base portion 30 and the sealing portion 40 are omitted from illustration in FIG.

[0012] The base part 30 is a structure that supports the semiconductor unit 10 and the housing 20, and is formed of a conductive material such as aluminum or copper. For example, the base part 30 is a heat sink. The base part 30 may also be a cooler such as fins or a water-cooled jacket that cools the semiconductor unit 10. Furthermore, the base part 30 may also be used as a ground body that is set to a ground potential.

[0013] The housing 20 houses the semiconductor unit 10. Specifically, the housing 20 is a rectangular frame-shaped structure that surrounds the semiconductor unit 10. That is, as illustrated in FIG. 2, the semiconductor unit 10 is housed in a space surrounded by the housing 20 with the base portion 30 as the bottom surface. The sealing portion 40 seals the semiconductor unit 10 by filling the space inside the housing 20. The sealing portion 40 is formed of various resin materials such as epoxy resin or silicone gel. Note that the sealing portion 40 may contain various fillers such as silicon oxide or aluminum oxide.

[0014] 1 and 2, the semiconductor unit 10 includes a laminated substrate 11, a semiconductor chip 12p, a semiconductor chip 12n, a wiring portion 13p, a wiring portion 13n, a connecting conductor 14p, a connecting conductor 14n, and a connecting conductor 14o. In the following description, the suffix p is added to the reference numeral of an element corresponding to the semiconductor chip 12p, and the suffix n is added to the reference numeral of an element corresponding to the semiconductor chip 12n. In addition, when there is no particular need to distinguish between the semiconductor chip 12p and the semiconductor chip 12n (when the description is applicable to both), they will be simply referred to as "semiconductor chip 12." The same applies to the other elements.

[0015] The laminated substrate 11 is a plate-like member that supports the semiconductor chips 12 (12p, 12n), the wiring portions 13 (13p, 13n), and the connecting conductors 14 (14p, 14n, 14o). For example, a laminated ceramic substrate such as a DCB (Direct Copper Bonding) substrate or an AMB (Active Metal Brazing) substrate, or a metal-based substrate including a resin insulating layer is used as the laminated substrate 11.

[0016] 2, the laminated substrate 11 is composed of a laminate of an insulating substrate 112, a metal layer 113, and a plurality of conductor patterns 114 (114a, 114b, 114c). The insulating substrate 112 is a rectangular plate-like member made of an insulating material. The insulating substrate 112 may be made of any material, but may be made of a ceramic material such as alumina (Al2O3), aluminum nitride (AlN), or silicon nitride (Si3N4), or a resin material such as epoxy resin. The reference plane R may also be expressed as a plane that divides the insulating substrate 112 into two equal parts in the X-axis direction.

[0017] The metal layer 113 is a conductive film formed on the lower surface of the insulating substrate 112 facing the base portion 30. The metal layer 113 is formed on the entire area or a part (e.g., an area other than the edge) of the lower surface of the insulating substrate 112. The lower surface of the metal layer 113 contacts the upper surface of the base portion 30. The metal layer 113 is formed of a metal material with high thermal conductivity, such as copper or aluminum. The multiple conductor patterns 114 (114a, 114b, 114c) are conductive films formed at a distance from each other on the upper surface of the insulating substrate 112 opposite to the base portion 30. Each conductor pattern 114 is formed of a low-resistance conductive material, such as copper or a copper alloy.

[0018] 1, the conductor pattern 114a is a rectangular conductive film formed in a region of the upper surface of the insulating substrate 112 in the X1 direction as viewed from the reference plane R. The conductor pattern 114b is a rectangular conductive film formed in a region of the upper surface of the insulating substrate 112 in the X2 direction as viewed from the reference plane R. The conductor pattern 114c is a conductive film formed in the Y1 direction as viewed from the conductor patterns 114a and 114b. Specifically, the conductor pattern 114c is formed in a planar shape including a region of the conductor pattern 114a located in the Y1 direction and a region of the conductor pattern 114b located in the Y1 direction.

[0019] The semiconductor chips 12 (12p, 12n) are power semiconductor elements capable of switching large currents. Specifically, each semiconductor chip 12 may include a transistor such as an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), an RC-IGBT (Reverse Conducting IGBT) or an FWD (Free Wheeling Diode), etc. In the first embodiment, a configuration in which the semiconductor chip 12 is an RC-IGBT including an IGBT portion and an FWD portion is illustrated.

[0020] Each semiconductor chip 12 (12p, 12n) has a main electrode E, a main electrode C, and a control electrode G. The main electrode E and the main electrode C are electrodes to which a current to be controlled is input or output. Specifically, the main electrode E is an emitter electrode formed on the upper surface of the semiconductor chip 12, and the main electrode C is a collector electrode formed on the lower surface of the semiconductor chip 12. The main electrode C also functions as an anode electrode of the FWD portion, and the main electrode E also functions as a cathode electrode of the FWD portion. On the other hand, the control electrode G is a gate electrode formed on the upper surface of the semiconductor chip 12, to which a voltage for controlling the on / off of the semiconductor chip 12 is applied. The control electrode G may include a detection electrode for current detection, temperature detection, or the like. The semiconductor chip 12n is an example of a "first semiconductor chip", and the main electrode E of the semiconductor chip 12n is an example of a "first main electrode". Moreover, the semiconductor chip 12p is an example of a "second semiconductor chip", and the main electrode C of the semiconductor chip 12p is an example of a "second main electrode".

[0021] 2, the semiconductor chips 12 (12p, 12n) are joined to the laminated substrate 11 by using a bonding material 15 such as solder. Specifically, as shown in FIG. 1, the semiconductor chip 12p is joined to the conductor pattern 114a. That is, the main electrode C of the semiconductor chip 12p is joined to the conductor pattern 114a. Also, the semiconductor chip 12n is joined to the conductor pattern 114c of the laminated substrate 11. That is, the main electrode C of the semiconductor chip 12n is joined to the conductor pattern 114c.

[0022] The wiring portion 13p in FIG. 1 is a wiring that electrically connects the main electrode E of the semiconductor chip 12p and the conductor pattern 114c. The wiring portion 13p extends in the Y-axis direction. An end of the wiring portion 13p located in the Y2 direction is joined to the main electrode E of the semiconductor chip 12p, and an end of the wiring portion 13p located in the Y1 direction is joined to the conductor pattern 114c. On the other hand, the wiring portion 13n is a wiring that electrically connects the main electrode E of the semiconductor chip 12n and the conductor pattern 114b. The wiring portion 13n extends in the Y-axis direction. An end of the wiring portion 13n located in the Y1 direction is joined to the main electrode E of the semiconductor chip 12n, and an end of the wiring portion 13n located in the Y2 direction is joined to the conductor pattern 114b. The wiring portion 13p and the wiring portion 13n are lead frames formed of a low-resistance conductive material such as copper or a copper alloy.

[0023] The connection conductors 14 (14p, 14n, 14o) are formed of a low-resistance conductive material such as copper or a copper alloy. The connection conductor 14p is a conductor for electrically connecting the semiconductor chip 12p to the outside. Specifically, the connection conductor 14p is joined to the surface of the conductor pattern 114a by a bonding material (not shown) such as solder. That is, the connection conductor 14p is electrically connected to the main electrode C of the semiconductor chip 12p via the conductor pattern 114a. The connection conductor 14p is located in the Y2 direction as viewed from the semiconductor chip 12p and the wiring portion 13p. As can be understood from the above explanation, the semiconductor chip 12p, the wiring portion 13p, and the connection conductor 14p are placed in the space in the X1 direction as viewed from the reference plane R.

[0024] The connection conductor 14n is a conductor for electrically connecting the semiconductor chip 12n to the outside. Specifically, the connection conductor 14n is joined to the surface of the conductor pattern 114b by a bonding material (not shown) such as solder. That is, the connection conductor 14n is electrically connected to the main electrode E of the semiconductor chip 12n via the conductor pattern 114b and the wiring portion 13n. The connection conductor 14n is located in the Y2 direction as viewed from the semiconductor chip 12n and the wiring portion 13n. As can be understood from the above description, the semiconductor chip 12n, the wiring portion 13n, and the connection conductor 14n are placed in a space in the X2 direction as viewed from the reference plane R. The connection conductor 14p and the connection conductor 14n are arranged in the X-axis direction with a gap between them.

[0025] The connection conductor 14o is a conductor for electrically connecting the conductor pattern 114c to the outside. Specifically, the connection conductor 14o is joined to the surface of the conductor pattern 114c by a joining material (not shown) such as solder. That is, the connection conductor 14o is electrically connected to the main electrode E of the semiconductor chip 12p via the conductor pattern 114c and the wiring portion 13p, and is also electrically connected to the main electrode C of the semiconductor chip 12n via the conductor pattern 114c.

[0026] 2, each of the connection conductors 14p, 14n, and 14o is a columnar structure protruding from the laminated substrate 11 in the Z1 direction. The planar shape of each connection conductor 14 is rectangular. That is, the connection conductor 14 in the first embodiment is a prismatic column. The top surface 141p of the connection conductor 14p, the top surface 141n of the connection conductor 14n, and the top surface of the connection conductor 14o are located higher than the other elements of the semiconductor unit 10. That is, in the direction of the Z axis, the top surface 141 of each connection conductor 14 is located in the Z1 direction compared to the laminated substrate 11, each wiring portion 13, and each semiconductor chip 12.

[0027] 1 includes a connection unit 21, a connection unit 22, and a housing part 23. The connection unit 21 and the connection unit 22, which are formed separately from the housing part 23, are fixed to the housing part 23, thereby forming the housing 20.

[0028] The housing 23 is a frame-shaped structure in a plan view, and surrounds the semiconductor unit 10. That is, the semiconductor unit 10 is accommodated in a space surrounded by the housing 23. Specifically, the lower surface of the housing 23 is joined to the edge of the upper surface of the base 30 by, for example, an adhesive. The semiconductor unit 10 is accommodated in the housing 23 with the side surface of the laminated substrate 11 (insulating substrate 112) facing the inner wall surface of the housing 23 at a distance. That is, the semiconductor chips 12 (12p, 12n) and the wiring portions 13 (13p, 13n) are surrounded by the housing 23. In addition, at least a part of each of the connection conductors 14 (14p, 14n, 14o), including the lower end, is also surrounded by the housing 23. The inner wall surface of the housing 23 is a wall surface (inner peripheral surface) facing the center side of the housing 23 in a plan view. The housing 23 is formed of various resin materials, such as, for example, polyphenylene sulfide (PPS) resin, polybutylene terephthalate (PBT) resin, poly butylene succinate (PBS) resin, polyamide (PA) resin, acrylonitrile-butadiene-styrene (ABS) resin, etc. The housing 23 may include a filler formed of an insulating material.

[0029] Specifically, as illustrated in FIG. 1, the housing 23 is a rectangular frame-shaped structure in which a side wall 231, a side wall 232, a side wall 233, and a side wall 234 are connected to each other in the above order. The side wall 231 and the side wall 233 are side wall portions extending in the Y-axis direction at a predetermined interval in the X-axis direction. On the other hand, the side wall 232 and the side wall 234 are side wall portions extending in the X-axis direction at a predetermined interval in the Y-axis direction. The side wall 232 and the side wall 234 are shaped to connect the ends of the side wall 231 and the side wall 233 to each other. The connection conductors 14p and 14n of the semiconductor unit 10 are arranged at intervals from each other along the side wall 232 at positions spaced apart from the inner wall surface of the side wall 232 in the Y1 direction.

[0030] 3 and 4 show an example of a state in which the connection unit 21 and the connection unit 22 are separated from the housing part 23. As shown in FIG. 3 and FIG. 4, a recess 25 is formed in the side wall 232 of the housing part 23. The recess 25 is a recess formed in a part of the upper surface of the side wall 232 and opening in the Z1 direction. The recess 25 is a space in which the connection unit 21 is accommodated. The recess 25 of the first embodiment penetrates the side wall 232 in the Y-axis direction. Specifically, the recess 25 is a rectangular parallelepiped space defined by side surfaces 251 and 252 that face each other at a distance in the X-axis direction and a bottom surface 253 that is lower than the upper surface of the side wall 232. The side surfaces 251 and 252 are planes parallel to the YZ plane, and the bottom surface 253 is a plane parallel to the XY plane.

[0031] On the other hand, a recess 26 is formed in the side wall 234 of the housing 23. The recess 26 is a depression formed in a part of the upper surface of the side wall 234 and opening in the Z1 direction. The recess 26 is a space in which the connection unit 22 is accommodated. The recess 26 in the first embodiment penetrates the side wall 234 in the Y-axis direction. Specifically, the recess 26 is a rectangular parallelepiped space defined by side surfaces 261 and 262 that face each other at a distance in the X-axis direction and a bottom surface 263 that is located lower than the upper surface of the side wall 234. The side surfaces 261 and 262 are planes parallel to the YZ plane, and the bottom surface 263 is a plane parallel to the XY plane.

[0032] 3, width W1 is the dimension of recess 25 in the X-axis direction (i.e., the distance between side surface 251 and side surface 252), and width W2 is the dimension of recess 26 in the X-axis direction (i.e., the distance between side surface 261 and side surface 262). Width W1 of recess 25 is greater than width W2 of recess 26 (W1>W2).

[0033] 1, a plurality of control terminals 236 are provided on a side wall 234 of the housing 23. The plurality of control terminals 236 are lead terminals for electrically connecting the control electrodes G of each semiconductor chip 12 to the outside, and are formed integrally with the housing 23 by, for example, insert molding. Each control terminal 236 is electrically connected to the control electrodes G of each semiconductor chip 12 (12p, 12n) by, for example, a plurality of wires 237.

[0034] As illustrated in FIG. 2, a base film 24 is formed on the inner wall surface of the housing part 23. The base film 24 is a film body that covers the inner wall surface of the housing part 23. The base film 24 functions as a primer for improving adhesion between the inner wall surface of the housing part 23 and the sealing part 40. An appropriate resin material according to the material of the housing part 23 and the material of the sealing part 40 is used to form the base film 24. Specifically, the base film 24 is formed by, for example, a silane coupling agent. The base film 24 may be formed by, for example, polyimide resin, polyamideimide resin, polyamide resin, or modified products thereof. The base film 24 is omitted from FIG. 1 for convenience.

[0035] 3 and 4, the connection unit 21 includes a support 53 and a terminal portion 55. The support 53 is a structure that supports the terminal portion 55. Like the housing portion 23, the support 53 is formed of various resin materials such as PPS resin, PBT resin, PBS resin, PA resin, or ABS resin. In a more preferred embodiment, the support 53 is formed of the same type of material as the housing portion 23. The connection unit 21 is integrally formed, for example, by insert molding.

[0036] The support 53 is a rectangular parallelepiped structure including an inner wall surface 531, an outer wall surface 532, a side surface 533, a side surface 534, an upper surface 535, and a lower surface 536. The inner wall surface 531 is a side surface facing the Y1 direction (the inside of the housing 20), and the outer wall surface 532 is a side surface facing the Y2 direction (the outside of the housing 20). A base film 54 is formed on the inner wall surface 531 of the support 53, similar to the inner wall surface of the housing unit 23. The base film 54 functions as a primer for improving adhesion between the inner wall surface 531 of the support 53 and the sealing unit 40 (sealing body 42). However, the base film 54 may be omitted.

[0037] The side surface 533 is a surface facing the X1 direction, and the side surface 534 is a surface facing the X2 direction. The width W3 shown in FIG. 3 is the distance between the side surface 533 and the side surface 534, and the height H shown in FIG. 4 is the distance between the upper surface 535 and the lower surface 536. As shown in FIG. 3, the width W3 of the support 53 is equal to the width W1 of the recess 25 (W3≒W1). Also, as shown in FIG. 4, the height H of the support 53 is equal to the depth D of the recess 25 (H≒D).

[0038] In this specification, when dimensions a and b are "equivalent" (a ≒ b), this includes cases where dimensions a and b are completely the same, as well as cases where dimensions a and b are substantially the same. "When dimensions a and b are substantially the same" refers to, for example, a case where the difference between dimensions a and b is within the range of manufacturing error. Specifically, when dimensions a are do Dimension B but Dimension a and dimension b are interpreted as being "equal" if they are 90% or more and 110% or less (more preferably 95% or more and 105% or less).

[0039] The support 53 is fixed to the housing 23 in a state where it is accommodated in the recess 25 of the housing 23. Since the width W3 of the support 53 and the width W1 of the recess 25 are equal, the side surface 533 of the support 53 contacts the side surface 251 of the recess 25, and the side surface 534 of the support 53 contacts the side surface 252 of the recess 25. In addition, the lower surface 536 of the support 53 contacts the bottom surface 253 of the recess 25. Since the height H of the support 53 and the depth D of the recess 25 are equal, the upper surface 535 of the support 53 and the upper surface of the housing 23 are continuous without any step. In addition, when the support 53 is accommodated in the recess 25, the inner wall surface 531 of the support 53 and the inner wall surface of the housing 23 are continuous without any step, and the outer wall surface 532 of the support 53 and the outer wall surface of the housing 23 are continuous without any step. The support 53 and the housing 23 are joined to each other by any technique, such as welding using a laser or adhesion using an adhesive. However, the support 53 may be fixed to the housing 23 by fitting the support 53 into the recess 25. In other words, joining the support 53 and the housing 23 is not essential.

[0040] In this specification, the phrase "surface a and surface b are continuous without a step" includes the case where surface a and surface b are located completely in the same plane, as well as the case where surface a and surface b are substantially located in the same plane. "Surface a and surface b are substantially located in the same plane" refers to, for example, the case where the step between surface a and surface b is within the range of manufacturing error. Specifically, when a step caused by a dimensional error within the range of ±10% (more preferably ±5%) exists between surface a and surface b, surface a and surface b are interpreted as "continuous without a step". According to the configuration in which surface a and surface b are continuous without a step, there is an advantage that damage caused by stress concentration or insufficient rigidity at the step portion can be suppressed. In other words, as long as the effect of suppressing damage as exemplified above is realized within the range, even if there is actually a step between surface a and surface b, it can be interpreted as "continuous without a step".

[0041] The terminal portion 55 is formed by laminating a connection terminal 51p, an insulating sheet 52, and a connection terminal 51n. Each connection terminal 51 (51p, 51n) is a thin plate-like electrode made of a low-resistance conductive material such as copper or a copper alloy. The insulating sheet 52 is a thin plate-like member made of an insulating material. For example, insulating paper is suitably used as the insulating sheet 52.

[0042] The connection terminal 51p, the insulating sheet 52, and the connection terminal 51n are stacked in the Z2 direction. Specifically, the insulating sheet 52 is interposed between the connection terminal 51p and the connection terminal 51n. The connection terminal 51p is located in the Z1 direction of the insulating sheet 52, and the connection terminal 51n is located in the Z2 direction of the insulating sheet 52. The connection terminal 51p is a positive input terminal (P terminal) for electrically connecting the semiconductor chip 12p to the outside. The connection terminal 51n is a negative input terminal (N terminal) for electrically connecting the semiconductor chip 12n to the outside. The connection terminal 51p and the connection terminal 51n are electrically insulated by the insulating sheet 52. According to the above-mentioned configuration in which the connection terminal 51p and the connection terminal 51n face each other with the insulating sheet 52 sandwiched therebetween, an inductive component accompanying the current path of the semiconductor module 100 is reduced. Note that a configuration in which the connection terminal 51p and the connection terminal 51n do not overlap in a plan view is also assumed. In a configuration in which the connection terminals 51p and 51n do not overlap, the insulating sheet 52 may be omitted.

[0043] 1, the connection terminal 51p includes a main body portion 511p and an extending portion 512p. The main body portion 511p is a rectangular portion in a plan view. The extending portion 512p is a rectangular portion extending in the Y1 direction from a part of a periphery 513p located in the Y1 direction in the main body portion 511p. Specifically, the extending portion 512p extends in the Y1 direction from a portion of the periphery 513p of the main body portion 511p located in the X1 direction from the reference plane R. The extending portion 512p is also expressed as a portion having a smaller width than the main body portion 511p.

[0044] Like the connection terminal 51p, the connection terminal 51n includes a main body portion 511n and an extension portion 512n. The main body portion 511n is a rectangular portion in a plan view. The extension portion 512n is a rectangular portion extending in the Y1 direction from a part of the periphery 513n of the main body portion 511n located in the Y1 direction. Specifically, the extension portion 512n extends in the Y1 direction from a part of the periphery 513n of the main body portion 511n located in the X2 direction from the reference plane R. The extension portion 512n is also expressed as a portion having a smaller width than the main body portion 511n. As can be understood from the above description, the extension portion 512p of the connection terminal 51p and the extension portion 512n of the connection terminal 51n are located on opposite sides of each other across the reference plane R. The connection terminal 51n is an example of a "first terminal", and the connection terminal 51p is an example of a "second terminal".

[0045] The insulating sheet 52 is formed in a rectangular shape in a plan view. A peripheral edge 521 of the insulating sheet 52 located in the Z1 direction is located between a peripheral edge 513p of a main body 511p of the connection terminal 51p and a tip of an extension portion 512p, and is located between a peripheral edge 513n of a main body 511n of the connection terminal 51n and a tip of an extension portion 512n. Therefore, as illustrated in FIG. 3, a portion 514p including a tip of the extension portion 512p of the connection terminal 51p (hereinafter referred to as a "joint portion") and a portion 514n including a tip of the extension portion 512n of the connection terminal 51n (hereinafter referred to as a "joint portion") protrude from the peripheral edge 521 of the insulating sheet 52 in the Y1 direction.

[0046] As can be understood from the above description, the main body portion 511p and the main body portion 511n overlap each other in a planar view. On the other hand, the joint portion 514p (extending portion 512p) and the joint portion 514n (extending portion 512n) do not overlap each other in a planar view. The insulating sheet 52 is located between the main body portion 511p and the main body portion 511n, and does not overlap the joint portions 514p and 514n in a planar view. According to the above configuration, the overlap between the main body portion 511p and the main body portion 511n reduces the inductive component of the current path of the semiconductor module 100 as described above, and the configuration in which the joint portions 514p and 514n do not overlap each other ensures reliable electrical insulation between the joint portions 514p and 514n.

[0047] In addition, the positions in the Y direction between the periphery 513p of the connection terminal 51p, the periphery 513n of the connection terminal 51n, and the periphery 521 of the insulating sheet 52 may coincide. That is, a configuration in which the joint 514p is directly connected to the main body 511p, and the joint 514n is directly connected to the main body 511n may be assumed. In other words, the portion of the extension 512p other than the joint 514p may be omitted from the connection terminal 51p, and the portion of the extension 512n other than the joint 514n may be omitted from the connection terminal 51n. In addition, the main body 511n is an example of a "first main body", and the joint 514n is an example of a "first joint". In addition, the main body 511p is an example of a "second main body", and the joint 514p is an example of a "second joint".

[0048] The terminal portion 55 penetrates the support body 53 in the Y-axis direction. A portion of the connection terminal 51p close to a periphery 513p of the main body portion 511p and the entire extension portion 512p protrude in the Y1 direction from an inner wall surface 531 of the support body 53. Similarly, a portion of the connection terminal 51n close to a periphery 513n of the main body portion 511n and the entire extension portion 512n protrude in the Y1 direction from an inner wall surface 531 of the support body 53.

[0049] 1, a joint portion 514p of the connection terminal 51p extending in the Y1 direction from the peripheral edge 521 of the insulating sheet 52 overlaps with the connection conductor 14p in a plan view. The joint portion 514p of the connection terminal 51p is joined to the connection conductor 14p by, for example, laser welding. That is, the connection terminal 51p is electrically connected to the main electrode C of the semiconductor chip 12p via the connection conductor 14p and the conductor pattern 114a.

[0050] Similarly, the joint portion 514n of the connection terminal 51n extending from the periphery 521 of the insulating sheet 52 overlaps with the connection conductor 14n in a plan view. The joint portion 514n of the connection terminal 51n is joined to the connection conductor 14n by, for example, laser welding. That is, the connection terminal 51n is electrically connected to the main electrode E of the semiconductor chip 12n via the connection conductor 14n, the conductor pattern 114b, and the wiring portion 13n.

[0051] The connection unit 22 includes a connection terminal 61 and a support 63. The support 63 is a structure that supports the connection terminal 61. The support 63 is formed of various resin materials, similar to the support 53. In a more preferred embodiment, the support 63 is formed of the same material as the housing 23. Note that, like the inner wall surface of the housing 23, an undercoat film is provided on the inner wall surface of the support 63. ( (not shown) is formed.

[0052] The connection terminal 61 penetrates the support 63 in the Y-axis direction. The connection unit 22 is integrally formed, for example, by insert molding. The support 63 is fixed to the housing 23 while being accommodated in the recess 26 of the housing 23. The portion of the connection terminal 61 protruding from the inner wall surface of the support 63 is joined to the top surface of the connection conductor 14o. That is, the connection terminal 61 is electrically connected to the main electrode E of the semiconductor chip 12p via the connection conductor 14o, the conductor pattern 114c, and the wiring portion 13p, and is also electrically connected to the main electrode C of the semiconductor chip 12n via the connection conductor 14o and the conductor pattern 114c.

[0053] As can be understood from the above explanation, a rectangular frame-shaped resin case is formed by fixing support body 53 (connection unit 21) and support body 63 (connection unit 22), which are configured separately from housing portion 23, to housing portion 23.

[0054] 2, the sealing portion 40 is configured by laminating a sealing body 41 and a sealing body 42. That is, the sealing body 41 is located between the laminated substrate 11 of the semiconductor unit 10 and the sealing body 42. The sealing body 41 and the sealing body 42 are formed of various resin materials such as epoxy resin. Note that the sealing body 41 and the sealing body 42 may be formed of different materials. For example, the sealing body 41 may be formed of a gel material such as silicone gel, and the sealing body 42 may be formed of epoxy resin.

[0055] The sealant 41 is filled in the space surrounded by the housing 23. Specifically, the sealant 41 is filled in the space surrounded by the housing 23 with the laminated substrate 11 as the bottom surface. Therefore, the sealant 41 contacts the base film 24 formed on the inner wall surface of the housing 23. In addition, the surface F1 of the sealant 41 is located lower than the bottom surface 253 of the recess 25 and the bottom surface 263 of the recess 26 in the housing 23. In addition, the surface F1 of the sealant 41 is also referred to as the boundary surface between the sealant 41 and the sealant 42. The sealant 41 is an example of a "first sealant."

[0056] As illustrated in FIG. 2, the top surface 141 (141p, 141n) of each connecting conductor 14 is located higher than the surface F1 of the sealing body 41. That is, the conductive portion 142 (142p, 142n), which is a part of each connecting conductor 14 including the top surface 141, protrudes in the Z1 direction from the surface F1 of the sealing body 41. On the other hand, the portion of each connecting conductor 14 other than the conductive portion 142 and the elements of the semiconductor unit 10 other than each connecting conductor 14 (laminated substrate 11, semiconductor chip 12p, semiconductor chip 12n, wiring portion 13p, wiring portion 13n) are located lower than the surface F1 of the sealing body 41. That is, only the conductive portion 142 of each connecting conductor 14 of the semiconductor unit 10 is exposed from the surface F1 of the sealing body 41, and the portion other than the conductive portion 142 is covered by the sealing body 41. The connecting conductor 14n is an example of a "first connecting conductor", and the conductive portion 142n is an example of a "first conductive portion". Moreover, the connecting conductor 14p is an example of a "second connecting conductor", and the conductive portion 142p is an example of a "second conductive portion".

[0057] The sealing body 42 is filled in the space surrounded by the housing part 23, the support 53, and the support 63. Specifically, the sealing body 42 is filled in the space surrounded by the housing part 23, the support 53, and the support 63 with the surface F1 of the sealing body 41 as the bottom surface. Therefore, the sealing body 42 contacts the base film 24 formed on the inner wall surface of the housing part 23. The surface F2 of the sealing body 42 is located higher than the uppermost surface of the terminal part 55 (specifically, the upper surface of the connection terminal 51p). That is, the conductive parts 142 of each connection conductor 14 (14p, 14n, 14o) exposed from the surface F1 of the sealing body 41, the parts of the terminal part 55 protruding from the inner wall surface 531 of the support 53, and the parts of the connection terminal 61 protruding from the inner wall surface of the support 63 are covered by the sealing body 42. The surface F2 of the sealing body 42 is located lower than the upper surface of the housing part 23. The sealing body 42 is an example of a "second sealing body."

[0058] As described above, in the first embodiment, the connection units 21 and 22 configured separately from the housing part 23 are fixed to the housing part 23. Therefore, any one of a plurality of types of connection units 21 having different structures is selectively fixed to the housing part 23. Similarly, any one of a plurality of types of connection units 22 having different structures is selectively fixed to the housing part 23. That is, by changing the connection unit 21 or the connection unit 22 installed in the housing part 23, the semiconductor unit 10 and the housing part 23 can be shared by different types of semiconductor modules 100.

[0059] A-2: Manufacturing method of semiconductor module 100 FIG. 5 is a process diagram illustrating a method for manufacturing the semiconductor module 100 described above. First, in step P1 after manufacturing the semiconductor unit 10, the semiconductor unit 10 is housed inside the housing part 23. That is, each semiconductor chip 12 (12p, 12n) and at least a part of each connection conductor 14 (14p, 14n, 14o) are surrounded by the housing part 23. In step P2 after performing step P1, a base film 24 is formed on an inner wall surface of the housing part 23. Specifically, in step P2, a resin material suitable for the base film 24 is applied to the inner wall surface of the housing part 23, and the resin material is cured to form the base film 24. Step P2 is an example of an "base formation step".

[0060] In step P3 after execution of step P2, the state of the base film 24 is confirmed. Specifically, it is confirmed whether the base film 24 has been properly formed. For example, an operator visually checks the state of the base film 24 from above in the vertical direction. For example, it is confirmed whether the base film 24 has been evenly applied and whether any defects such as damage have occurred in the base film 24. The state of the base film 24 may be confirmed by imaging using an imaging device.

[0061] When it is confirmed in step P3 that the undercoat film 24 is properly formed, in step P4, the sealant 41 is filled in the space inside the housing part 23. Specifically, a liquid resin material (e.g., epoxy resin) is filled in the space inside the housing part 23, and the resin material is cured by heating or the like to form the sealant 41. The sealant 41 is filled to a position lower than the bottom surface 253 of the recess 25 and the bottom surface 263 of the recess 26 in the housing part 23. Therefore, the possibility that the resin material to be the sealant 41 leaks through the recess 25 or the recess 26 is reduced. Immediately after step P4 is performed, as illustrated in FIG. 4, the conductive portion 142 including the top surface 141 of each connection conductor 14 (14p, 14n, 14o) is exposed from the surface F1 of the sealant 41. Note that step P4 is an example of a "first sealing step".

[0062] In step P5 after step P4 is performed, the state of the encapsulant 41 is confirmed. Specifically, it is confirmed whether the encapsulant 41 has been properly formed. For example, an operator visually checks the state of the encapsulant 41 from above in the vertical direction. For example, it is confirmed whether the encapsulant 41 is sufficiently adhered to the base film 24 and whether any defects such as air bubbles or unfilled portions have occurred in the encapsulant 41. The state of the encapsulant 41 may be confirmed by imaging with an imaging device.

[0063] In step P6 after the execution of step P5, the connection unit 21 and the connection unit 22 are fixed to the housing part 23. That is, in the first embodiment, after the formation and confirmation of the base film 24 and the sealing body 41, the connection unit 21 and the connection unit 22 are installed in the housing part 23. Specifically, the support 53 of the connection unit 21 is accommodated and fixed in the recess 25 of the housing part 23, and the support 63 of the connection unit 22 is accommodated and fixed in the recess 26 of the housing part 23. At the stage where step P6 is executed, as illustrated in FIG. 1, the joint 514p of the connection terminal 51p overlaps the connection conductor 14p in a plan view, and the joint 514n of the connection terminal 51n overlaps the connection conductor 14n in a plan view. As described above, in the first embodiment, the position of the support 53 relative to the housing part 23 in the X-axis direction is determined by accommodating the support 53 in the recess 25 of the housing part 23. Therefore, the task of fixing the connection unit 21 to the housing part 23 is simplified, as compared with a configuration in which the position of the support body 53 relative to the housing part 23 needs to be adjusted separately from the fixing of the support body 53 to the housing part 23. The same applies to the connection unit 22.

[0064] Moreover, the connection unit 21 of the first embodiment includes the connection terminal 51p and the connection terminal 51n. Therefore, compared with a configuration in which the connection terminal 51p and the connection terminal 51n are provided independently of each other, the operation of the step P6 of providing the connection terminal 51p and the connection terminal n in the housing part 23 is simplified.

[0065] As described above, the conductive portion 142p of the connection conductor 14p and the conductive portion 142n of the connection conductor 14n are exposed from the surface F1 of the sealing body 41. In step P7 after step P6, the joint portion 514p of the connection terminal 51p is joined to the top surface 141p of the conductive portion 142p, and the joint portion 514n of the connection terminal 51n is joined to the top surface 141n of the conductive portion 142n. For example, laser welding is preferably used to join the joint portions 514 (514p, 514n) and the conductive portions 142 (142p, 142n). At the stage of step P7, the elements of the semiconductor unit 10 other than the conductive portions 142 (142p, 142n) are covered by the sealing body 41. Therefore, the possibility that foreign matter generated by, for example, laser welding, directly adheres to each element of the semiconductor unit 10 (for example, the semiconductor chip 12, etc.) is reduced.

[0066] As can be understood from the above description, steps P6 and P7 are steps (one example of a "joining step") of fixing the connection unit 21 to the housing 23 and joining the conductive parts 142 (142p, 142n) of the connection conductors 14 (14p, 14n) to the connection terminals 51 (51p, 51n). The order of steps P6 and P7 may be reversed. That is, the connection terminals 51 may be joined to the conductive parts 142 of each connection conductor 14 (step P7) before the support 53 is fixed to the housing 23 (step P6).

[0067] In step P8 after step P7, the space surrounded by the housing 23, the support 53, and the support 63 is filled with the sealant 42. Specifically, a liquid resin material (e.g., epoxy resin) constituting the sealant 42 is filled, and the resin material is cured by heating or the like to form the sealant 42. Step P8 is an example of a "second sealing step."

[0068] For comparison with the first embodiment described above, a configuration in which the terminal portion 55 is directly installed on the housing portion 23 is assumed (hereinafter referred to as "Comparative Example 1") as illustrated in FIG. 6. In the first embodiment, the support 53 on which the terminal portion 55 is installed is configured separately from the housing portion 23, whereas Comparative Example 1 is configured in which the terminal portion 55 is installed on the housing portion 23 constituting the container 20. In Comparative Example 1, the terminal portion 55 is installed on the housing portion 23 at the stage when the base film 24 or the sealing body 41 is formed. That is, the range α in FIG. 6 located directly below the terminal portion 55 (Z2 direction) in the space surrounded by the housing portion 23 is located behind the terminal portion 55 when viewed from a point above in the vertical direction. Therefore, in Comparative Example 1, the terminal portion 55 hinders the work of forming the base film 24 and the sealing body 41 and the work of checking the state of the base film 24 and the sealing body 41.

[0069] In contrast to Comparative Example 1, in the first embodiment, the connection unit 21 is fixed to the housing 23 after the sealing body 41 is formed, and the connection terminals 51 (51p, 51n) of the connection unit 21 are joined to the conductive parts 142 (142p, 142n) of the connection conductors 14 (14p, 14n) exposed from the surface F1 of the sealing body 41. That is, the sealing body 41 is formed without the terminal parts 55 being installed in the housing 23. Therefore, the process P4 of forming the sealing body 41 and the process P5 of checking the state of the sealing body 41 can be easily performed without being hindered by the terminal parts 55. Furthermore, in the first embodiment, the base film 24 is formed without the terminal parts 55 being installed in the housing 23. Therefore, the process P2 of forming the base film 24 on the inner wall surface of the housing 23 and the process P3 of checking the state of the base film 24 can be easily performed without being hindered by the terminal parts 55.

[0070] Meanwhile, in the process of manufacturing the semiconductor module 100, a test (hereinafter referred to as an "insulation test") is performed to determine whether the connection terminal 51p and the connection terminal 51n are properly insulated by the insulating sheet 52. In Comparative Example 1, the terminal portion 55 is directly fixed to the housing portion 23, so that the entire housing portion 23 needs to be fixed to a test device for the insulation test. Therefore, a problem is expected in that the scale of the test device is large. In contrast to Comparative Example 1, in the first embodiment, the terminal portion 55 is provided on the connection unit 21 that is separate from the housing portion 23, so that in the insulation test, it is sufficient to fix the connection unit 21 to the test device. In other words, according to the first embodiment, there is also an effect that the scale of the test device used for the insulation test can be reduced.

[0071] B: Second embodiment The second embodiment will be described below. Note that, in the configurations exemplified below, for elements whose functions are similar to those of the first embodiment, the reference numerals used in the description of the first embodiment will be used and detailed descriptions of each will be omitted as appropriate.

[0072] FIG. 7 is a plan view illustrating the configuration of a semiconductor module 100 in the second embodiment. FIG. 8 is a cross-sectional view taken along line bb in FIG. 7. The semiconductor module 100 in the second embodiment has a configuration in which a protrusion 56 is added to the support body 53 of the connection unit 21 in the first embodiment. The configuration other than the protrusion 56 is similar to that in the first embodiment. The semiconductor module 100 in the second embodiment is manufactured by the manufacturing method described above with reference to FIG. 5. Therefore, the second embodiment also achieves the same effects as the first embodiment.

[0073] FIG. 9 is a cross-sectional view enlarging the vicinity of the protrusion 56. As illustrated in FIG. 7 to FIG. 9, the protrusion 56 is an eave-shaped portion protruding from the inner wall surface 531 of the support 53 in the Y1 direction, and is formed integrally with the support 53 by, for example, insert molding. As illustrated in FIG. 7, the protrusion 56 extends in the X-axis direction over the entire width W3 of the support 53. As illustrated in FIG. 9, the thickness T of the protrusion 56 is sufficiently smaller than the height H of the support 53. In addition, the length L of the protrusion 56 in the direction in which the protrusion 56 protrudes from the inner wall surface 531 of the support 53 (i.e., the Y1 direction) exceeds the thickness T of the protrusion 56 (L>T). That is, the protrusion 56 is formed in a flat plate shape parallel to the XY plane. Note that, although FIG. 6 illustrates an example in which the base film 54 covers the inner wall surface 531 of the support 53, the base film 54 may cover the protrusion 56 in addition to the inner wall surface 531.

[0074] The upper surface of the protrusion 56 contacts the lower surface of the connection terminal 51n (i.e., the lowermost surface of the terminal portion 55). That is, the protrusion 56 is located between the connection terminal 51n and the sealing body 41 (and further between the connection terminal 51n and the base portion 30). Specifically, a space is formed between the lower surface of the protrusion 56 and the surface F1 of the sealing body 41, and the sealing body 42 is filled in the space. That is, the lower surface of the protrusion 56 faces the surface F1 of the sealing body 41 with the sealing body 42 interposed therebetween. In addition, the lower surface of the protrusion 56 and the lower surface 536 of the support body 53 are located in the same plane. That is, the lower surface of the protrusion 56 is continuous with the lower surface 536 of the support body 53 without any step.

[0075] The tip of the protrusion 56 (i.e., the end in the Y1 direction) faces each side of the connecting conductor 14p and the connecting conductor 14n with a gap therebetween. Specifically, the distance between the tip of the protrusion 56 and the side of each connecting conductor 14 (14p, 14n) exceeds 1 mm. In other words, even if it is assumed that the tip of the protrusion 56 faces the side of the connecting conductor 14 with a gap therebetween, no creepage distance passing through the gap is formed.

[0076] Fig. 10 is an enlarged cross-sectional view of the vicinity of the support 53 in the first embodiment. The sealing body 41 may peel off from the base film 24 (or the inner wall surface of the housing part 23) due to residual stress in the housing part 23 or the sealing body 41, or thermal stress caused by the difference in the linear expansion coefficient between them, etc. In the first embodiment, when a portion of the sealing body 41 located directly below the terminal part 55 peels off from the base film 24, the distance between the lower surface of the connection terminal 51n and the surface of the base part 30 is the creepage distance, as shown by the thick line in Fig. 10.

[0077] In the second embodiment, the protrusion 56 that contacts the lower surface of the connection terminal 51n protrudes from the inner wall surface 531 of the support 53. Therefore, when the sealing body 41 is peeled off from the base film 24 (the inner wall surface of the housing part 23), the creeping distance between the connection terminal 51n and the base part 30 is the sum of the height of the housing part 23, the length L of the protrusion 56, and the thickness T of the protrusion 56, as shown by the thick line in FIG. 9. As can be understood from the above description, according to the second embodiment, it is easier to ensure the creeping distance directly below the terminal part 55 compared to the first embodiment in which the protrusion 56 is not formed. That is, there is an advantage that it is easier to ensure the insulation of the terminal part 55 of the connection unit 21. In particular, in the second embodiment, the length L of the protrusion 56 exceeds the thickness T of the protrusion 56. Therefore, compared to the embodiment in which the length L of the protrusion 56 is less than the thickness T of the protrusion 56, the creeping distance when the sealing body 41 is peeled off from the base film 24 can be sufficiently ensured.

[0078] In Comparative Example 1 in which the terminal portion 55 is installed on the housing portion 23, a configuration in which the protrusion portion 56 is formed on the inner wall surface of the housing portion 23 (hereinafter referred to as "Comparative Example 2") is assumed. However, in Comparative Example 2, the inner wall surface of the side wall 232 of the housing portion 23 is located behind both the terminal portion 55 and the protrusion portion 56. Therefore, in Comparative Example 2, the problem that the formation and confirmation of the base film 24 and the confirmation of the sealing body 41 are hindered becomes more apparent than in Comparative Example 1. In contrast to Comparative Example 2, in the second embodiment, the protrusion portion 56 is formed on the support body 53 separate from the housing portion 23. That is, the base film 24 and the sealing body 41 are formed in a state in which the terminal portion 55 and the protrusion portion 56 are not present. Therefore, the process P2 of forming the base film 24 on the inner wall surface of the housing portion 23, the process P3 of confirming the state of the base film 24, and the process P5 of confirming the state of the sealing body 41 can be easily performed without being hindered by either the terminal portion 55 or the protrusion portion 56. That is, the configuration in which the support 53 is formed separately from the housing part 23 is particularly effective for the configuration in which the protrusion 56 is formed on the support 53 .

[0079] C: Third embodiment FIG. 11 is a partial cross-sectional view of a semiconductor module 100 in the third embodiment. Similar to the second embodiment, the semiconductor module 100 in the third embodiment includes a protrusion 56 protruding in the Y1 direction from an inner wall surface 531 of the support body 53. Similar to FIG. 9, FIG. 11 illustrates the vicinity of the protrusion 56. Note that the configuration other than the protrusion 56 is similar to that of the first embodiment. The semiconductor module 100 in the third embodiment is manufactured by the manufacturing method described above with reference to FIG. 5. Therefore, the third embodiment also achieves the same effects as the first embodiment.

[0080] Similar to the protrusion 56 of the second embodiment, the protrusion 56 of the third embodiment extends in the X-axis direction across the entire width W3 of the support 53. The protrusion 56 is integrally formed with the support 53 by, for example, insert molding. As illustrated in FIG. 11 , the protrusion 56 of the third embodiment includes a first portion 561 and a second portion 562.

[0081] The first portion 561 is an eave-shaped portion protruding in the Y1 direction from the inner wall surface 531 of the support 53, similar to the protrusion 56 of the second embodiment. The length L of the first portion 561 in the Y1 direction is greater than the thickness T of the first portion 561 (L>T). That is, the first portion 561 is formed in a flat plate shape parallel to the XY plane. The second portion 562 is a portion protruding from the tip of the first portion 561 in the Y1 direction to the opposite side to the connection terminals 51 (51p, 51n) (i.e., the Z2 direction). The tip of the second portion 562 (i.e., the end opposite to the first portion 561) contacts the surface F1 of the sealing body 41. As in the second embodiment, a predetermined interval is secured between the protrusion 56 of the second embodiment and the connection conductor 14 (14p, 14n).

[0082] As illustrated above, in the third embodiment, the protrusion 56 includes, in addition to the first portion 561 protruding from the inner wall surface 531 of the support 53, a second portion 562 protruding from the tip of the first portion 561 to the opposite side of the connection terminal 51 (51p, 51n). Therefore, as illustrated in FIG. 11, compared to the second embodiment in which the protrusion 56 is formed in a simple flat plate shape, a sufficient creeping distance between the connection terminal 51n and the base portion 30 can be ensured. Also, in the third embodiment, the tip of the second portion 562 contacts the surface F1 of the sealing body 41. Therefore, compared to a configuration in which the tip of the second portion 562 does not contact the surface F1 of the sealing body 41, it is possible to stabilize the posture of the connection unit 21 in the above-mentioned step P6 in which the connection unit 21 is fixed to the housing portion 23. However, a form in which the tip of the second portion 562 does not contact the surface F1 of the sealing body 41 is also assumed.

[0083] D: Fourth embodiment FIG. 12 is a partial cross-sectional view of a semiconductor module 100 in the fourth embodiment. As in the second embodiment, the semiconductor module 100 in the fourth embodiment has a protrusion 56 protruding in the Y1 direction from an inner wall surface 531 of the support body 53. As in FIG. 9 shown above, FIG. 12 illustrates the vicinity of the protrusion 56. Note that the configuration other than the protrusion 56 is the same as in the first embodiment. The semiconductor module 100 in the fourth embodiment is manufactured by the manufacturing method described above with reference to FIG. 5. Therefore, the fourth embodiment also achieves the same effects as the first embodiment.

[0084] 12, like the protrusion 56 of the second embodiment, the protrusion 56 of the fourth embodiment is a visor-like portion protruding in the Y1 direction from the inner wall surface 531 of the support 53, and is formed integrally with the support 53 by, for example, insert molding. The protrusion 56 extends in the X-axis direction over the entire width W3 of the support 53.

[0085] In the second embodiment, a configuration was exemplified in which the tip of the protrusion 56 faces the side surface of each connecting conductor 14 (14p, 14n) with a gap therebetween. In the fourth embodiment, as exemplified in FIG. 12, the tip of the protrusion 56 contacts the side surface of each connecting conductor 14 (14p, 14n). That is, the length L of the protrusion 56 is substantially equal to the distance between the inner circumferential surface of the casing 23 and the side surface of each connecting conductor 14. The configuration in which the length L of the protrusion 56 exceeds the thickness T of the protrusion 56 is similar to the second embodiment. That is, the protrusion 56 is formed in a flat plate shape parallel to the XY plane.

[0086] In the fourth embodiment, when the sealing body 41 is peeled off from the base film 24 (the inner wall surface of the housing part 23), the creeping distance between the connection terminal 51n and the base part 30 is the sum of the height of the housing part 23 and the length L of the protrusion part 56. That is, like the second embodiment, the fourth embodiment has the advantage that it is easier to ensure the creeping distance directly below the terminal part 55 compared to the first embodiment in which the protrusion part 56 is not formed.

[0087] In the process P6 of fixing the connection unit 21 to the housing part 23 in the manufacturing method of the semiconductor module 100 in the fourth embodiment, the connection unit 21 arranged inside the recess 25 is moved in the Y1 direction until the tip of the protrusion 56 abuts against the side surface of each connection conductor 14 (14p, 14n). Then, the support body 53 is fixed to the housing part 23 in a state where the tip of the protrusion 56 abuts against the side surface of each connection conductor 14. As can be understood from the above description, in the fourth embodiment, the position of the connection unit 21 in the Y1 direction can be determined by bringing the tip of the protrusion 56 into contact with the side surface of each connection conductor 14. That is, the protrusion 56 can be used to position the connection terminal 51 (51p, 51n) relative to each connection conductor 14. On the other hand, according to the second embodiment in which the tip of the protrusion 56 faces the side surface of the connection conductor 14 with a gap therebetween, there is an advantage that it is easier to ensure the creepage distance between the connection terminal 51n and the base part 30 compared to the fourth embodiment.

[0088] In the third embodiment in which the protrusion 56 includes the first portion 561 and the second portion 562, the protrusion 56 may be brought into contact with the side surfaces of each connecting conductor 14 (14p, 14n) in the same manner as in the fourth embodiment. Specifically, the surface in the Y1 direction of the second portion 562 of the protrusion 56 in FIG. 11 (i.e., the surface facing each connecting conductor 14) comes into contact with the side surfaces of each connecting conductor 14. With the above configuration, the same effects as in the third embodiment are achieved.

[0089] E: Variation Specific modified embodiments added to each of the above-mentioned embodiments are exemplified below. Two or more embodiments selected from the following examples may be appropriately combined as long as they are not mutually contradictory.

[0090] (1) In the first embodiment, a configuration in which the conductive portion 142 of each connection conductor 14 (14p, 14n, 14o) is exposed from the surface F1 of the sealing body 41 (hereinafter referred to as "Configuration 1") and a configuration in which the connection unit 21, which is separate from the housing part 23, is fixed to the housing part 23 (hereinafter referred to as "Configuration 2") are exemplified. In addition, in the second embodiment to the fourth embodiment, a configuration in which the protrusion 56 protrudes from the inner wall surface 531 of the support body 53 (hereinafter referred to as "Configuration 3") is exemplified. The first embodiment corresponds to a combination of Configuration 1 and Configuration 2, and the second embodiment to the fourth embodiment correspond to a combination of Configuration 1 to Configuration 3. As exemplified below, the combination of Configuration 1 to Configuration 3 is not limited to the above-mentioned examples. That is, two or more configurations arbitrarily selected from Configuration 1 to Configuration 3 can be combined.

[0091] [Aspect A] For example, the embodiment A illustrated in FIG. 13 is a combination of the configurations 1 and 3. In the embodiment A, a terminal portion 55 is provided on a single housing portion 23 having a rectangular frame shape. The connection terminals 51 (51p, 51n) of the terminal portion 55 are joined to the conductive portions 142 of the connection conductors 14 (14p, 14n) exposed from the surface F1 of the sealing body 41 (Configuration 1). In addition, a protrusion 56 protruding in the Y1 direction from the inner wall surface of the housing portion 23 is formed on the housing portion 23 (Configuration 3). As can be understood from the above description, the embodiment A omits the configuration 2. The protrusion 56 in FIG. 13 may be replaced with the protrusion 56 illustrated in the third or fourth embodiment.

[0092] [Aspect B] Aspect B illustrated in FIG. 14 is a combination of configurations 2 and 3. In aspect B, the connection unit 21, which is separate from the housing 23, is fixed to the housing 23 (configuration 2). Each connection terminal 51 (51p, 51n) of the terminal portion 55 installed in the connection unit 21 is joined to the top surface 141 of each connection conductor 14 (14p, 14n). In addition, a protrusion 56 that protrudes in the Y1 direction from the inner wall surface 531 of the support 53 of the connection unit 21 is formed on the housing 23 (configuration 3). On the other hand, the sealing body 41 is formed so as to cover the entire semiconductor unit 10 including the top surface 141 of each connection conductor 14. That is, in aspect B, configuration 1 is omitted. The protrusion 56 in FIG. 14 may be replaced with the protrusion 56 of the third or fourth embodiment.

[0093] (2) A configuration including each of the above-mentioned configurations 1 to 3 alone is also assumed. For example, the configuration illustrated in FIG. 15 (hereinafter referred to as "configuration C") is a configuration including only configuration 3 among configurations 1 to 3. In configuration C, a protrusion 56 protruding in the Y1 direction from the inner wall surface of the housing 23 is formed on the housing 23 (configuration 3). The terminal portion 55 is installed on the housing 23, and the sealing body 41 is formed so as to cover the entire semiconductor unit 10 including the top surface 141 of each connection conductor 14. That is, configurations 1 and 2 are omitted. Note that the protrusion 56 in FIG. 15 may be replaced with the protrusion 56 in the third or fourth embodiment. As can be understood from the above description, according to configuration 3, regardless of the presence or absence of configurations 1 and 2, the effect of easily securing the creepage distance regarding the connection terminal 51n is realized compared to a configuration in which the protrusion 56 is not formed. Note that configuration C in FIG. 15 corresponds to the above-mentioned comparative example 2. In addition, in embodiment C (configuration 3), sealing portion 40 (sealing body 41 and sealing body 42) may be omitted.

[0094] (3) In the above-described embodiments, the sealing portion 40 includes the sealing body 41 and the sealing body 42. However, as illustrated in FIG. 16, the sealing body 42 may be omitted. That is, the sealing portion 40 may be composed of only the sealing body 41. The configuration in which the terminal portion 55 is sealed by the sealing portion 40 has the advantage that it is easy to ensure the insulation of the connection terminals 51 (51p, 51n). In particular, in the configuration in which the conductive portion 142 of the connection conductor 14 (14p, 14n) is exposed from the surface F1 of the sealing body 41, the formation of the sealing body 42 can ensure sufficient insulation of the connection conductor 14 as well.

[0095] (4) In each of the above-described embodiments, a configuration in which the base film 24 is formed on the inner wall surface of the housing part 23 has been exemplified, but the base film 24 may be omitted. According to the above-described configuration 2, the base film 24 can be formed in a state in which the terminal part 55 is not installed on the housing part 23. Therefore, the process P2 of forming the base film 24 on the inner wall surface of the housing part 23 and the process P3 of checking the state of the base film 24 can be easily performed without being hindered by the terminal part 55. From the above viewpoints, the configuration 2 is particularly effective for a configuration in which the base film 24 is formed on the inner peripheral surface of the housing part 23.

[0096] (5) In each of the above-described embodiments, the semiconductor unit 10 is accommodated in a space surrounded by the housing 20 with the base 30 as the bottom surface, but the base 30 is not an essential element of the semiconductor module 100. For example, as illustrated in FIG. 17, a configuration not requiring the base 30 is also possible.

[0097] In the configuration of FIG. 17, the insulating substrate 112 and the housing part 23 of the laminated substrate 11 are joined to each other, so that the semiconductor unit 10 is supported by the housing 20. Specifically, the edge of the upper surface of the insulating substrate 112 and the lower surface of the housing part 23 are joined by, for example, an adhesive. In the configuration of FIG. 17, the insulating substrate 112 and the metal layer 113 are located in the Z2 direction from the lower surface of the housing part 23. That is, a part of the semiconductor unit 10 is located outside the space surrounded by the housing part 23. On the other hand, in each of the above-mentioned forms, the entire semiconductor unit 10 is surrounded by the housing part 23 (housing body 20). As can be understood from the above examples, the housing body 20 is comprehensively expressed as an element that surrounds the semiconductor chip 12, and it does not matter whether it surrounds the entire semiconductor unit 10 or a part of it. Note that the side surface of the insulating substrate 112 and the inner wall surface of the housing part 23 may be joined by, for example, an adhesive.

[0098] In addition, in each of the above-mentioned embodiments, a configuration has been exemplified in which the sealing portion 40 (sealing body 41) is filled up to the space on the sides and below the laminated substrate 11, but as can be understood from the example in Figure 17, a configuration in which the sealing portion 40 does not reach the space on the sides and below the laminated substrate 11 is also envisioned.

[0099] (6) In the above-described embodiments, a configuration in which the top surface 141 of each connecting conductor 14 (14p, 14n) is located higher than the bottom surface 253 of the recess 25 has been exemplified. In the above configuration, a part of each connecting conductor 14, including the top surface 141, is located outside the space surrounded by the housing part 23 (at a position higher than the bottom surface 253 of the recess 25). On the other hand, a configuration in which the top surface 141 of each connecting conductor 14 (14p, 14n) is located lower than the bottom surface 253 of the recess 25 is also assumed. In other words, each connecting conductor 14 may be entirely surrounded by the housing part 23. As can be understood from the above description, at least a part of the connecting conductor 14 (14p, 14n) is surrounded by the housing part 23.

[0100] (7) In the above-described embodiments, the semiconductor chip 12 includes an RC-IGBT, but the configuration of the semiconductor chip 12 is not limited to the above examples. For example, a configuration in which the semiconductor chip 12 includes an IGBT or a MOSFET is also conceivable. In a configuration in which the semiconductor chip 12 includes a MOSFET, the main electrode C is one of the source electrode and the drain electrode, and the main electrode E is the other of the source electrode and the drain electrode. In addition, the number of semiconductor chips 12 included in the semiconductor module 100 is not limited to two. For example, a configuration in which the semiconductor module 100 includes one semiconductor chip 12 or three or more semiconductor chips 12 is also conceivable. [Explanation of symbols]

[0101] 100...semiconductor module, 10...semiconductor unit, 11...laminated substrate, 112...insulating substrate, 113...metal layer, 114 (114a, 114b, 114c)...conductor pattern, 12 (12p, 12n)...semiconductor chip, 13 (13p, 13n)...wiring portion, 14 (14p, 14n, 14o)...connecting conductor, 141 (141p, 141n)...top surface, 142 (142p, 142n)...conductive portion, 15...bonding material, 20...container, 21, 22...connecting unit, 23...casing portion, 24...undercoat film, 25, 26...recess, 251, 252, 261, 262...side surface, 253, 263...bottom surface, 30...base portion, 40...sealing portion, 41...sealing body, 42...sealing body, 51 (51p, 51n)...connection terminal, 52...insulating sheet, 53, 63...support, 55...terminal portion, 56...protrusion portion, 61...connection terminal, 231, 232, 233, 234...side wall, 236...control terminal, 237...wire, 511 (511p, 511n)...main body portion, 512 (512p, 512n)...extension portion, 514 (514p, 514n)...joint portion, 561...first portion, 562...second portion.

Claims

1. a first semiconductor chip including a first main electrode; a first connecting conductor electrically connected to the first main electrode; a housing portion surrounding the first semiconductor chip and at least a portion of the first connection conductor; a first sealing body filled in a space surrounded by the housing; a connection unit fixed to the housing portion, a first conductive portion that is a part of the first connection conductor is exposed from a surface of the first sealing body, The connection unit includes: a first terminal joined to the first conductive portion of the first connection conductor; a support body configured separately from the housing portion and supporting the first terminal, A recess is formed in the housing portion, The support is accommodated in the recess, The surface of the first sealing body is located lower than the bottom surface of the recess. Semiconductor module.

2. The width of the support is equal to the width of the recess. The semiconductor module of claim 1.

3. a first semiconductor chip including a first main electrode; a first connecting conductor electrically connected to the first main electrode; a housing portion surrounding the first semiconductor chip and at least a portion of the first connection conductor; a first sealing body filled in a space surrounded by the housing; a connection unit fixed to the housing portion, a first conductive portion that is a part of the first connection conductor is exposed from a surface of the first sealing body, The connection unit includes: a first terminal joined to the first conductive portion of the first connection conductor; a support body configured separately from the housing portion and supporting the first terminal, A protrusion protruding from an inner wall surface of the support and contacting a bottom surface of the first terminal. A semiconductor module comprising:

4. The length of the protrusion in a direction protruding from the inner wall surface of the support is greater than the thickness of the protrusion. The semiconductor module according to claim 3.

5. The tip of the protrusion faces a side surface of the first connection conductor with a gap therebetween.

5. The semiconductor module according to claim 3 or 4.

6. The tip of the protrusion is in contact with a side surface of the first connection conductor.

5. The semiconductor module according to claim 3 or 4.

7. The protrusion is A first portion protruding from an inner wall surface of the support body; a second portion protruding from a tip of the first portion toward an opposite side to the first terminal; 7. The semiconductor module according to claim 3.

8. The tip of the second portion contacts the surface of the first sealing body. The semiconductor module of claim 7.

9. a first sealing step of filling a space inside a housing that surrounds a first semiconductor chip including a first main electrode and a first connection conductor electrically connected to the first main electrode with a first sealing body such that a first conductive portion that is a part of the first connection conductor is exposed; a joining step, which is a step performed after the first sealing step, of fixing a connection unit including a first terminal and a support body supporting the first terminal to the housing portion, and joining the first conductive portion of the first connection conductor to the first terminal; A method for manufacturing a semiconductor module comprising the steps of:

10. A recess is formed in the housing portion, In the joining step, the support is accommodated in the recess, In the first sealing step, the first sealant is filled up to a position lower than a bottom surface of the recess. The method for manufacturing the semiconductor module according to claim 9.

11. The method further includes a base forming step of forming a base film that covers an inner wall surface of the housing portion, the base forming step being a step before the first sealing step. The method for manufacturing a semiconductor module according to claim 9 or 10.

12. The method further includes a second sealing step, which is a step performed after the joining step, of filling a space surrounded by the housing portion and the support body with a second sealing body. A method for manufacturing a semiconductor module according to any one of claims 9 to 11.

13. The connection unit includes a protrusion that protrudes from an inner wall surface of the support and contacts a bottom surface of the first terminal. A method for manufacturing a semiconductor module according to any one of claims 9 to 12.

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