Passive component, three-dimensional device, and method for manufacturing passive component

Abstract

To provide passive components that can reduce the overall thickness of devices such as stacked semiconductor packages.SOLUTION: A passive component has a body part having a first major surface and a passive element at least partially provided inside the body part, and the first major surface includes a flat surface at least partially made of an inorganic material and having a surface roughness of less than 1 / 1000 of the thickness of the body part or 10 nm in a direction orthogonal to the first major surface.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to passive components, three-dimensional devices, and methods for manufacturing passive components. [Background technology]

[0002] In recent years, as stacked semiconductor packages become smaller and perform better, electronic circuits are becoming more integrated. A conventional stacked semiconductor package is described in Japanese Patent No. 5448393 (Patent Document 1). This stacked semiconductor package has a first semiconductor package, a second semiconductor package stacked on the first semiconductor package, and a capacitor provided between the first semiconductor package and the second semiconductor package and connected to the first semiconductor package and the second semiconductor package. The capacitor is an example of a passive component. In this way, the footprint (area of ​​the circuit and components) is reduced by stacking the first semiconductor package, the second semiconductor package, and the capacitor. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 5448393 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the conventional stacked semiconductor package, the first semiconductor package, the second semiconductor package, and the capacitor are connected using solder balls or solder paste, which increases the overall thickness of the stacked semiconductor package, making it difficult to achieve a thin structure.

[0005] Therefore, an object of the present disclosure is to provide a passive component, a three-dimensional device, and a method for manufacturing a passive component that can reduce the thickness of an entire device such as a stacked semiconductor package. [Means for solving the problem]

[0006] In order to solve the above problems, a passive component according to one aspect of the present disclosure comprises: A body portion having a first major surface; a passive element at least a portion of which is provided inside the main body; The first main surface includes a flat surface at least partially made of an inorganic material and having a surface roughness of 1 / 1000 or less of the thickness of the main body in a direction perpendicular to the first main surface, or 10 nm or less.

[0007] According to the above aspect, since the first main surface of the main body includes at least a part of a flat surface made of an inorganic material, when the main body is bonded to another electronic component having a flat surface, the flat surfaces can be bonded in a state of contact with each other, thereby making it possible to reduce the thickness of the entire device, such as a stacked semiconductor package.

[0008] Preferably, in one embodiment of the three-dimensional device, The passive components; a semiconductor integrated circuit component bonded to the flat surface of the passive component.

[0009] According to the embodiment, a thin three-dimensional device can be obtained.

[0010] In one embodiment of the method for manufacturing a passive component, preparing an inorganic layer made of an inorganic material and having a first main surface and a second main surface opposed to each other; providing a passive element on the second main surface side of the inorganic layer to form a main body including the inorganic layer and at least a portion of the passive element; and polishing the first main surface of the inorganic layer to provide a flat surface having a surface roughness of 1 / 1000 or less of the thickness of the main body in a direction perpendicular to the first main surface, or 10 nm or less.

[0011] According to the embodiment, since the first main surface of the inorganic layer includes a flat surface, when bonding to another electronic component having a flat surface, the flat surfaces can be bonded in a state of contact with each other, which allows the entire device, such as a stacked semiconductor package, to be thinned. Effect of the Invention

[0012] According to the passive component, the three-dimensional device, and the method for manufacturing the passive component that are one aspect of the present disclosure, it is possible to achieve a thinner device. [Brief description of the drawings]

[0013] [Figure 1] 2 is a schematic bottom view showing the first embodiment of the passive component as viewed from the bottom side. FIG. [Diagram 2] FIG. 2 is a cross-sectional view taken along line II-II of FIG. [Diagram 3] FIG. 2 is a cross-sectional view taken along line III-III of FIG. [Figure 4A] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 4B] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 4C] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 4D] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 4E] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 4F] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 4G] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 4H] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 4I] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 4J] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 4K] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Diagram 5]13 is a schematic top view showing a second embodiment of a passive component as viewed from the top surface side. FIG. [Figure 6] 6 is a cross-sectional view taken along line VI-VI of FIG. 5. [Figure 7] FIG. 7 is an enlarged view of part A in FIG. [Figure 8A] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 8B] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 8C] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 8D] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 8E] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 8F] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 8G] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 8H] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 8I] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 9] FIG. 13 is a schematic top view showing a third embodiment of a passive component as viewed from the top surface side. [Figure 10] XX cross-sectional view of Figure 9. [Figure 11A] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 11B] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 11C] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 11D] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 11E] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 11F] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 11G] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 11H] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 11I] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 11J] 5A to 5C are schematic cross-sectional views illustrating a method for manufacturing a passive component. [Figure 12] 1 is a schematic cross-sectional view showing a stacked semiconductor package. [Figure 13] FIG. 11 is a schematic cross-sectional view showing a modified example of the three-dimensional device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Hereinafter, a passive component, a three-dimensional device, and a method for manufacturing a passive component according to one aspect of the present disclosure will be described in detail with reference to the illustrated embodiments. Note that the drawings include some schematic views and may not reflect actual dimensions or ratios.

[0015] First Embodiment 1. Schematic configuration of passive component 1 Fig. 1 is a schematic bottom view of the passive component 1 as viewed from the bottom side. Fig. 2 is a cross-sectional view taken along line II-II in Fig. 1. Fig. 3 is a cross-sectional view taken along line III-III in Fig. 1. For convenience, the element body 10 is depicted as transparent in Fig. 1 so that the structure can be easily understood, but it may be semi-transparent or opaque. In addition, the insulator and inorganic layers are omitted in Fig. 1.

[0016] The passive component 1 is, for example, a surface-mount type passive component used in a high-frequency signal transmission circuit. The passive component 1 is an electronic component such as a resistor, a capacitor, and an inductor, and does not include an active element such as a transistor. In this embodiment, the passive component 1 is an inductor. As shown in FIG. 1 to FIG. 3, the passive component 1 includes a main body 41 having a first main surface 41a and a second main surface 41b facing each other, and a passive element at least a part of which is provided inside the main body 41. The passive element is an inductor element L. In other words, the passive component includes an element body, internal wiring, etc., and the passive element represents, for example, a coil in the passive component, but does not include the element body, etc. The passive elements include an inductor element, a capacitor element, and a resistor element, and among the inductor elements, an inductor element having a conductor that goes around a central axis in a specific direction is called a coil.

[0017] The main body 41 holds the inductor element L. The shape of the main body 41 is not particularly limited, but in this embodiment, it is substantially rectangular. The main body 41 has a length, a width, and a height. The main body 41 has a first end face and a second end face at both ends in the length direction, a first side face and a second side face at both ends in the width direction, and a bottom face and a top face at both ends in the height direction. In this embodiment, the bottom face of the main body 41 is the first main face 41a of the main body 41, and the top face of the main body 41 is the second main face 41b of the main body 41.

[0018] The first main surface 41a of the main body 41 includes at least a flat surface FS. The flat surface FS is made of an inorganic material. In this embodiment, the entire first main surface 41a is a flat surface FS made of an inorganic material. However, this is not limited thereto, and only a part of the first main surface 41a may be a flat surface FS made of an inorganic material. The other part of the first main surface 41a may be made of an organic material, for example, and may not be a flat surface FS. Preferably, the area of ​​the flat surface FS is half or more of the area of ​​the first main surface 41a of the main body 41. This can increase the bonding strength when the passive component 1 is bonded to another electronic component or the like via the flat surface FS.

[0019] In this specification, "flat" in "flat surface" refers to a state in which the surface roughness of the flat surface is either 1 / 1000 or less of the thickness of the body of the passive component (the thickness of the body in a direction perpendicular to the first principal surface of the body) or 10 nm or less. "Surface roughness" refers to Sa (arithmetic mean height). Flatness refers to a state in which Sa is 0.2 nm, for example. Sa is measured using an atomic force microscope (AFM). The surface roughness is the average value of Sa at five points on the surface of the component.

[0020] "Inorganic substances" include, for example, Si, SiN, SiO 2 , Ge, GaN, GaP, GaAs, InP, Ti, TiN, Al, Au, Sn, Ta, Cu, etc. This makes it easier to flatten the first main surface 41a of the main body 41 compared to when the first main surface 41a of the main body 41 is made of an organic material. In addition, the flat surface FS has a high hardness, and the strength of the passive component 1 can be increased.

[0021] According to the passive component 1, the first main surface 41a of the body 41 includes at least a part of a flat surface FS made of an inorganic material, and therefore when bonding to another electronic component having a flat surface FS, the flat surfaces FS can be bonded in a state of contact with each other. This makes it possible to reduce the thickness of the entire device, such as a stacked semiconductor package.

[0022] In this specification, "bonding of flat surfaces FS in a state of contact with each other" refers to room temperature direct bonding by atomic diffusion or ionic bonding, hybrid bonding by applying heat, etc. Also, "bonding" may refer to a chemical bonding state such as a covalent bond, an ionic bond, or a metallic bond, or may refer to a bonding state based on mechanical strength.

[0023] 2. Manufacturing method of passive component 1 Next, a method for manufacturing the passive component 1 will be described.

[0024] 2, an inorganic substrate 21 made of an inorganic material and having a first main surface 21a and a second main surface 21b facing each other is prepared. Then, an inductor element L is provided as a passive element on the second main surface 21b side of the inorganic substrate 21 to form a main body 41 including the inorganic substrate 21 and a part of the inductor element L. Then, the first main surface 21a of the inorganic substrate 21 is polished to provide a flat surface FS.

[0025] According to this, since the first main surface 21a of the inorganic substrate 21 includes the flat surface FS made of an inorganic material, when bonding to another electronic component having a flat surface FS, the flat surfaces FS can be bonded in a state of contact with each other. Therefore, it is possible to reduce the thickness of the entire device, such as a stacked semiconductor package.

[0026] 3. Preferred form (Passive Components 1) The passive component 1 includes an element body 10, a coil 110 provided on the element body 10 and wound in a spiral shape along an axis AX, an inorganic layer 21 provided on a first main surface (bottom surface 100b) of the element body 10, a first via wiring 121v and a second via wiring 122v penetrating the inorganic layer 21, and an insulator 22 provided on a second main surface (top surface 100t) of the element body 10. The coil 110 constitutes an inductor element L. The element body 10, the inorganic layer 21, and the first via wiring 121v and the second via wiring 122v constitute a main body 41. The first via wiring 121v and the second via wiring 122v correspond to "through wiring" in the claims.

[0027] The element body 10 has a length, a width, and a height. The element body 10 has a first end face 100e1 and a second end face 100e2 at both ends in the length direction, a first side face 100s1 and a second side face 100s2 at both ends in the width direction, and a bottom face 100b and a top face 100t at both ends in the height direction. That is, the outer surface 100 of the element body 10 includes the first end face 100e1 and the second end face 100e2, the first side face 100s1 and the second side face 100s2, and the bottom face 100b and the top face 100t. The first end face 100e1, the second end face 100e2, the first side face 100s1, and the second side face 100s2 respectively constitute a part of the first end face, a part of the second end face, a part of the first side face, and a part of the second side face of the main body portion 41 described above. The top surface 100t constitutes the top surface of the main body portion 41 described above.

[0028] As shown in the drawings, for the sake of convenience, the length direction (longitudinal direction) of the element body 10 is defined as the X direction, the direction from the first end face 100e1 to the second end face 100e2 is defined as the forward X direction, and the opposite direction of the forward X direction is defined as the reverse X direction. The width direction of the element body 10 is defined as the Y direction, the direction from the first side face 100s1 to the second side face 100s2 is defined as the forward Y direction, and the opposite direction of the forward Y direction is defined as the reverse Y direction. The height direction of the element body 10 is defined as the Z direction, the direction from the bottom face 100b to the top face 100t is defined as the forward Z direction, and the opposite direction of the forward Z direction is defined as the reverse Z direction. In this specification, the forward Z direction is defined as the upper side, and the reverse Z direction is defined as the lower side. The X direction, the Y direction, and the Z direction are perpendicular to each other, and when arranged in the order of X, Y, Z, they form a right-handed system.

[0029] In this specification, the "outer surface 100 of the element body" including the first end surface 100e1, the second end surface 100e2, the first side surface 100s1, the second side surface 100s2, the bottom surface 100b, and the top surface 100t of the element body 10 does not simply mean a surface facing the outer periphery of the element body 10, but a surface that is a boundary between the outside and the inside of the element body 10. In addition, "above the outer surface 100 of the element body 10" does not mean an absolute direction such as vertically upward defined by the direction of gravity, but refers to a direction toward the outside of the outside and the inside with the outer surface 100 as a boundary, based on the outer surface 100. Therefore, "above the outer surface 100" is a relative direction determined by the orientation of the outer surface 100. In addition, "above" with respect to a certain element includes not only an upper side away from the element, that is, an upper position via another object on the element or an upper position with a space therebetween, but also a position directly above the element (on).

[0030] The axis AX of the coil 110 is disposed parallel to the bottom surface 100b. In other words, the coil 110 has a central axis AX parallel to the first main surface 41a of the body portion 41. According to this configuration, when the first main surface 41a of the body portion 41 is used as a mounting surface, the magnetic flux generated from the coil 110 does not face the mounting surface, so that an inductor element L with a high Q value can be obtained.

[0031] The coil 110 includes a plurality of first coil wirings (bottom wirings 11b) provided on the bottom surface 100b side with respect to the axis AX and arranged along the axis AX on a plane parallel to the bottom surface 100b, a plurality of second coil wirings (top wirings 11t) provided on the top surface 100t side with respect to the axis AX and arranged along the axis AX on a plane parallel to the top surface 100t, a plurality of first through wirings 13 extending from the bottom wirings 11b toward the top wirings 11t and arranged along the axis AX, and a plurality of second through wirings 14 extending from the bottom wirings 11b toward the top wirings 11t, provided on the opposite side of the first through wirings 13 with respect to the axis AX and arranged along the axis AX. The bottom wirings 11b, the first through wirings 13, the top wirings 11t, and the second through wirings 14 are connected in this order to form at least a part of a spiral shape.

[0032] The axis AX is an intersection line between a first plane passing through the center between the bottom wiring 11b and the top wiring 11t and a second plane passing through the center between the first through wiring 13 and the second through wiring 14. In other words, the axis AX is a straight line passing through the center of the inner diameter part of the coil 110. The axis AX of the coil 110 does not have a dimension in a direction perpendicular to the axis AX.

[0033] The volume of passive component 1 is 0.08 mm 3 or less, and the size of the long side of passive component 1 is 0.65 mm or less. The size of the long side of passive component 1 refers to the largest value among the length, width, and height of passive component 1, and in this embodiment, refers to the length in the X direction. According to the above configuration, the volume of passive component 1 is small and the long side of passive component 1 is short, so that the weight of passive component 1 can be reduced. In addition, the thickness of passive component 1 is preferably 200 μm or less. This allows passive component 1 to be made thin.

[0034] Specifically, the size of the passive component 1 (length (X direction) × width (Y direction) × height (Z direction)) is 0.6 mm × 0.3 mm × 0.3 mm, 0.4 mm × 0.2 mm × 0.2 mm, 0.25 mm × 0.125 mm × 0.120 mm, etc. Also, the width and height do not have to be equal, and may be, for example, 0.4 mm × 0.2 mm × 0.3 mm.

[0035] (body 10) The element body 10 is made of insulating resin. For example, a photosensitive permanent film (permanent photoresist) or an insulating resin containing inorganic filler is used as the insulating resin. The photosensitive permanent film is a photoresist that is not removed after processing.

[0036] The element body 10 may be made of, for example, a sintered glass body or a glass substrate. The glass substrate may be a single-layer glass substrate, and since most of the element body is made of glass, losses such as eddy current losses at high frequencies can be suppressed.

[0037] (Coil 110) The coil 110 includes a plurality of bottom wirings 11b, a plurality of top wirings 11t, a plurality of first through wirings 13, and a plurality of second through wirings 14. The bottom wirings 11b, the first through wirings 13, the top wirings 11t, and the second through wirings 14 are connected in sequence to form at least a portion of the coil 110 wound in the axial direction AX.

[0038] According to the above configuration, the coil 110 is a so-called helical-shaped coil 110, so that in a cross section perpendicular to the axis AX, the area in which the bottom wiring 11b, the top wiring 11t, the first through wiring 13 and the second through wiring 14 run parallel to the winding direction of the coil 110 can be reduced, and the stray capacitance in the coil 110 can be reduced.

[0039] Here, a helical shape refers to a shape in which the number of turns in the entire coil is greater than 1, and the number of turns in the coil in a cross section perpendicular to the axis is less than 1. "One turn or more" refers to a state in which, in a cross section perpendicular to the axis, the coil wiring has parts that are adjacent in the radial direction when viewed from the axial direction and run parallel to the winding direction, and "less than 1 turn" refers to a state in which, in a cross section perpendicular to the axis, the coil wiring does not have parts that are adjacent in the radial direction when viewed from the axial direction and run parallel to the winding direction.

[0040] The bottom wiring 11b extends in the Y direction at a slight incline toward the X direction. The bottom wiring 11b is embedded in the element body 10 so as to be exposed from the bottom surface 100b. The multiple bottom wirings 11b are arranged in parallel along the X direction. When viewed from a direction perpendicular to the bottom surface 100b, the bottom wirings 11b at both ends in the axis AX direction are formed in a triangular shape, and the other bottom wirings 11b are formed in a linear shape.

[0041] The top surface wiring 11t extends in the Y direction. The top surface wiring 11t is provided on the top surface 100t. The multiple top surface wirings 11t are arranged in parallel along the X direction. When viewed from a direction perpendicular to the bottom surface 100b, the top surface wirings 11t at both ends in the axis AX direction are formed in a rectangular shape, and the other top surface wirings 11t are formed in a linear shape.

[0042] The bottom wiring 11b and the top wiring 11t are made of a good conductor material such as copper, silver, gold, or an alloy thereof. The bottom wiring 11b and the top wiring 11t may be a metal film formed by plating, vapor deposition, sputtering, or the like, or may be a metal sintered body formed by applying and sintering a conductive paste. The bottom wiring 11b and the top wiring 11t may also have a multilayer structure in which multiple metal layers are stacked. The thickness of the bottom wiring 11b and the top wiring 11t is preferably 5 μm or more and 50 μm or less.

[0043] The first through wiring 13 is disposed on the first side surface 100s1 side with respect to the axis AX in the through hole V of the element body 10, and the second through wiring 14 is disposed on the second side surface 100s2 side with respect to the axis AX in the through hole V of the element body 10. The first through wiring 13 and the second through wiring 14 extend in a direction perpendicular to the bottom surface 100b and the top surface 100t, respectively. This allows the lengths of the first through wiring 13 and the second through wiring 14 to be shortened, thereby suppressing the direct current resistance (Rdc). All the first through wiring 13 and all the second through wiring 14 are disposed in parallel along the X direction, respectively. The first through wiring 13 and the second through wiring 14 are made of the same material as the bottom surface wiring 11b and the top surface wiring 11t.

[0044] (Inorganic layer 21) The inorganic layer 21 is provided on the bottom surface 100b of the element body 10, and covers the exposed portion of the bottom surface wiring 11b from the bottom surface 100b. This protects the bottom surface wiring 11b from external forces, prevents damage to the bottom surface wiring 11b, and improves the insulation of the bottom surface wiring 11b. The inorganic layer 21 is made of an inorganic material. The inorganic material is, for example, Si, SiN, SiO, similar to the inorganic material of the flat surface FS described above. 2 , Ge, GaN, GaP, GaAs, InP, Ti, TiN, Al, Au, Sn, Ta, Cu, etc. The inorganic layer 21 has a first main surface 21a and a second main surface 21b facing each other. The first main surface 21a of the inorganic layer 21 constitutes a part of the first main surface 41a of the main body portion 41. The second main surface 21b is in contact with the bottom surface 100b of the element body 10.

[0045] (Insulator 22) The insulator 22 is provided on the top surface 100t of the element body 10 and covers the top surface wiring 11t. This protects the top surface wiring 11t from external forces, prevents damage to the top surface wiring 11t, and improves the insulation of the top surface wiring 11t. The insulator 22 is preferably an organic insulator. For example, the insulator 22 may be a resin film such as an epoxy-based or polyimide-based resin that is easy to form.

[0046] (first via wiring 121v and second via wiring 122v) The first via wiring 121v is connected to a first end of the coil 110, and the second via wiring 122v is connected to a second end of the coil 110. In other words, the first via wiring 121v and the second via wiring 122v are not included in the coil 110. The first via wiring 121v is provided on the first end face 100e1 side with respect to the center of the element body 10 in the X direction. The second via wiring 122v is provided on the second end face 100e2 side with respect to the center of the element body 10 in the X direction.

[0047] The first via wiring 121v is embedded in the inorganic layer 21 and exposed from the first main surface 21a of the inorganic layer 21. The first via wiring 121v penetrates the inorganic layer 21 from the first main surface 21a to the second main surface 21b of the inorganic layer 21. The first via wiring 121v is connected to an end of the bottom surface wiring 11b located on the first end surface 100e1 side in the axis AX direction.

[0048] The second via wiring 122v is embedded in the inorganic layer 21 and exposed from the first main surface 21a of the inorganic layer 21. The second via wiring 122v penetrates the inorganic layer 21 from the first main surface 21a to the second main surface 21b of the inorganic layer 21. The second via wiring 122v is connected to an end of the bottom surface wiring 11b located on the second end surface 100e2 side in the axis AX direction.

[0049] Preferably, the first main surface 21a of the inorganic layer 21, the exposed surface 121a of the first via wiring 121v exposed from the first main surface 21a of the inorganic layer 21, and the exposed surface of the second via wiring 122v (not shown) exposed from the first main surface 21a of the inorganic layer 21 constitute the first main surface 41a of the main body 41. With this configuration, an electrical signal can be extracted from the passive component 1 via the first via wiring 121v and the second via wiring 122v.

[0050] Preferably, the first via wiring 121v and the second via wiring 122v are made of an inorganic material, and an exposed surface 121a of the first via wiring 121v exposed from the first main surface 21a of the inorganic layer 21 and an exposed surface of the second via wiring 122v (not shown) exposed from the first main surface 21a of the inorganic layer 21 constitute at least a part of the flat surface FS. The inorganic material in the first via wiring 121v and the second via wiring 122v is, for example, Si, SiN, SiO 2 , Ge, GaN, GaP, GaAs, InP, Ti, TiN, Al, Au, Sn, Ta, Cu, etc. When the first via wiring 121v and the second via wiring 122v are made of an inorganic material, it is preferable that the first via wiring 121v and the second via wiring 122v do not include voids in order to reduce electrical resistance.

[0051] According to the above configuration, since the exposed surfaces of the first via wiring 121v and the second via wiring 122v are flat surfaces, when joining to another electronic component having a flat surface, if a part of the wiring in the other electronic component is exposed from the flat surface and the exposed surface is also flat, the wiring of the other electronic component can be directly connected to the first via wiring 121v and the second via wiring 122v.

[0052] Preferably, the inorganic layer 21 is amorphous or single crystal. To distinguish whether it is amorphous or single crystal, a scanning transmission electron microscope (STEM) or an X-ray diffraction device (XRD) is used. With this configuration, a flat surface FS can be easily obtained. When the inorganic layer 21 is a sintered body such as ferrite, unevenness may occur on the first main surface 21a of the inorganic layer 21.

[0053] Preferably, the main body 41 includes an inorganic layer 21 made of an inorganic material having a first main surface 21a and a second main surface 21b facing each other, and an organic insulating layer provided on the second main surface 21b of the inorganic layer 21, the first main surface 21a of the inorganic layer 21 forming at least a part of the first main surface 41a of the main body 41, and the passive element includes an inductor element L having a coil 110, the coil 110 being in contact with both the inorganic layer 21 and the organic insulating layer. Specifically, as shown in FIG. 2, preferably, the element 10 is made of an organic insulating layer, and the coil 110 is in contact with both the inorganic layer 21 and the organic insulating layer of the element 10.

[0054] According to the above configuration, the organic insulating layer of the element body 10 can support the coil 110, allowing the diameter of the coil 110 to be increased. In addition, the inorganic layer 21 has a smaller linear expansion coefficient than the organic insulating layer of the element body 10, allowing the stress of the main body 41 to be reduced compared to the case where the coil 110 is in contact only with the organic insulating layer of the element body 10.

[0055] Preferably, the main body portion 41 includes an inorganic layer 21 having a first main surface 21a and a second main surface 21b facing each other, the first main surface 21a of the inorganic layer 21 forming at least a part of the first main surface 41a of the main body portion 41, and the thickness of the inorganic layer 21 in a direction perpendicular to the first main surface 41a of the main body portion 41 (Z direction) is thinner than the thickness of the passive element in a direction perpendicular to the first main surface 41a of the main body portion 41. With this configuration, the passive component 1 can be made thinner.

[0056] 2, the main body 41 preferably includes an inorganic layer 21 made of an inorganic material having a first main surface 21a and a second main surface 21b opposed to each other, the first main surface 21a of the inorganic layer 21 forming at least a part of the first main surface 41a of the main body 41, and the passive element includes a coil 110 having a central axis parallel to the first main surface 41a of the main body 41, and a thickness t2 of the inorganic layer 21 in a direction perpendicular to the first main surface 41a of the main body 41 is thinner than a thickness t1 of the coil 110 in a direction perpendicular to the first main surface 41a of the main body 41. According to this configuration, the passive component 1 including the inductor element L can be made thinner.

[0057] Preferably, the main body 41 has a second main surface 41b facing the first main surface 41a, and further includes an insulator 22 made of an organic insulating resin provided on the second main surface 41b of the main body 41, and at least a part of the passive element is exposed from the second main surface 41b of the main body 41, and the exposed part of the passive element exposed from the second main surface 41b of the main body 41 is covered with the insulator 22. Specifically, as shown in FIG. 2, the insulator 22 is made of an organic insulating resin, and the top surface wiring 11t of the coil 110 of the inductor element L is exposed from the second main surface 41b of the main body 41 and covered with the insulator 22. According to this configuration, since the insulator 22 is made of an organic insulating resin, the adhesion of the insulator 22 to the top surface wiring 11t is improved, and the inductor element L can be more effectively protected from the external environment.

[0058] (Manufacturing method of passive component 1) Next, a method for manufacturing the passive component 1 will be described with reference to Figures 4A to 4K. Figures 4A, 4B, 4C, 4J, and 4K are views corresponding to the III-III cross section of Figure 1. Figures 4D to 4I are views corresponding to the II-II cross section of Figure 1.

[0059] 4A, an inorganic substrate 1021 corresponding to the inorganic layer 21 is prepared. The inorganic substrate 1021 is, for example, a Si substrate. A first resist layer 1001 is applied to the upper surface of the inorganic substrate 1021, and openings 1001a of a predetermined pattern are formed in the first resist layer 1001 by a photolithography process.

[0060] As shown in Fig. 4B, the inorganic substrate 1021 is etched through the opening 1001a to form the groove 1021a. The etching may be either dry etching or wet etching. In this embodiment, since a Si substrate is used as the inorganic substrate 1021, plasma etching using a fluorine-based gas is used.

[0061] Thereafter, the first resist layer 1001 is peeled off, and as shown in Figures 4C and 4D, a seed layer (not shown) is formed on the upper surface of the inorganic substrate 1021, a second resist layer 1002 is applied on the upper surface of the seed layer, and an opening 1002a of a predetermined pattern is formed in the second resist layer 1002 by a photolithography process. Then, a bottom conductor layer 1011b corresponding to the bottom wiring 11b is provided in the opening 1002a by electrolytic plating, and a first via conductor layer 1121v corresponding to the first via wiring 121v is provided in the groove 1021a. Also, although not shown, a second via conductor layer corresponding to the second via wiring 122v is provided in the same manner as the first via conductor layer 1121v.

[0062] In this embodiment, a semi-additive method is used as a method for forming the bottom conductor layer and the via conductor layer, but known methods such as a subtractive method, a full additive method, a damascene method, a dual damascene method, or a conductive paste printing method may also be used. In this embodiment, Ti / Cu is used for the seed layer, but W, TiW, Ag, or other seed species and combinations thereof may be selected as necessary.

[0063] Thereafter, the second resist layer 1002 is peeled off, the seed layer is etched, and an insulating resin layer 1010 corresponding to the element body 10 is provided on the upper surface of the inorganic substrate 1021 as shown in FIG. 4E. A predetermined pattern of openings 1010a is formed in the insulating resin layer 1010 by a photolithography process, a part of the bottom conductor layer 1011b is exposed from the openings 1010a, and the insulating resin layer 1010 is cured. In this embodiment, a photosensitive permanent film is used for the insulating resin layer 1010, but for example, an opening may be formed by a laser method or a blast method using an insulating resin containing an inorganic filler, or an inorganic insulating layer may be deposited by CVD or the like and an opening may be formed by an etching method or the like.

[0064] As shown in FIG. 4F, a second through conductor layer 1014 corresponding to the second through wiring 14 is formed in the opening 1010a of the insulating resin layer 1010. Although not shown, a first through conductor layer corresponding to the first through wiring 13 is provided in the same manner as the second through conductor layer 1014. Specifically, in this embodiment, a Ti / Cu seed layer is formed on the upper surface of the insulating resin layer 1010 and the inner surface of the opening 1010a by anisotropic sputtering. Thereafter, filling plating is performed, and the upper surface of the insulating resin layer 1010 is flattened by CMP (Chemical Mechanical Polishing) or mechanical polishing. In the case of mechanical polishing, in order to keep the surface roughness within a predetermined range, a dry etching or chemical etching process is performed after the mechanical polishing, and the upper surface of the insulating resin layer 1010 is flattened. As another method for forming the through conductor layer, a conductive part is provided in advance in the bottom surface conductor layer, and the conductive part is used to supply electricity to form the through conductor layer by electrolytic plating.

[0065] Thereafter, a seed layer (not shown) is formed on the upper surface of the insulating resin layer 1010, a resist layer (not shown) is applied on the upper surface of the seed layer, and a predetermined pattern of openings is formed in the resist layer by a photolithography process. Then, a top surface conductor layer 1011t corresponding to the top surface wiring 11t is provided in the openings by electrolytic plating, and the resist layer is peeled off and the seed layer is etched as shown in FIG. 4G.

[0066] As shown in FIG. 4H, an insulating layer 1022 corresponding to the insulator 22 is provided on the upper surface of the insulating resin layer 1010 so as to cover the top surface conductor layer 1011t, and the insulating layer 1022 is cured. The insulating layer 1022 may be made of the same resin as the insulating resin layer 1010, or may be made of a different resin. Since the insulating layer 1022 is in contact with the outside, it is preferable to use a resin having excellent water resistance or high hardness compared to the insulating resin layer 1010, and further, it is preferable to use a resin containing an inorganic filler, etc., which improves the insulation. Furthermore, it is preferable to use a resin having high light blocking properties (shielding properties) compared to the insulating resin layer 1010 for the insulating layer 1022.

[0067] As shown in Figures 4I and 4J, the inorganic substrate 1021 is polished to expose the end faces of the first via conductor layer 1121v and the end faces of the second via conductor layer. CMP is preferable for polishing the inorganic substrate 1021. If necessary, the insulating layer 1022 may be polished to adjust the thickness.

[0068] 4K, the substrate is cut into individual pieces along the cut lines C. In this way, the passive components 1 are manufactured as shown in FIG.

[0069] <Second embodiment> (Configuration of passive component 1A) Fig. 5 is a schematic top view showing a second embodiment of a passive component as seen from the top side. Fig. 6 is a cross-sectional view taken along the line VI-VI in Fig. 5. Fig. 7 is an enlarged view of part A in Fig. 6. The second embodiment differs from the first embodiment in the configuration of the coil and the configuration of the element body. This different configuration will be described below. The other configurations are the same as those in the first embodiment, and the same reference numerals as in the first embodiment will be used and the description thereof will be omitted.

[0070] 5 to 7, the passive component 1A includes an element body 10, a coil 110A, an organic insulating part 23, a first connection wiring 51 and a second connection wiring 52 provided inside the element body 10, and an inorganic layer 21 provided on a bottom surface 100b of the element body 10. The element body 10 has a first magnetic layer 101 and a second magnetic layer 102 stacked in the forward Z direction. The lower surface of the second magnetic layer 102 corresponds to the bottom surface 100b of the element body 10. In this embodiment, the element body 10 corresponds to the "magnetic part" recited in the claims.

[0071] The coil 110A is provided on the upper surface 101u of the first magnetic layer 101 and is formed into a planar spiral shape. When viewed from the Z direction, the coil 110A is spirally wound in a clockwise direction from the outer peripheral end 110e1 to the inner peripheral end 110e2. In other words, the coil 110A is wound along a plane parallel to the first main surface 41a of the main body 41. The coil 110A has a central axis AX perpendicular to the first main surface 41a of the main body 41. With this configuration, the inductor element L can be made thinner than when the coil 110A has a central axis parallel to the first main surface 41a of the main body 41. As a result, the passive component 1A can be made thinner.

[0072] The number of turns of the coil 110A is preferably more than one. This can improve the inductance. The outer peripheral end 110e1 is substantially rectangular. The inner peripheral end 110e2 is substantially circular. The width of the outer peripheral end 110e1 in the X direction and the diameter of the inner peripheral end 110e2 are each larger than the wiring width of the winding part, which is the part of the coil 110A excluding the outer peripheral end 110e1 and the inner peripheral end 110e2. This allows the outer peripheral end 110e1 and the inner peripheral end 110e2 to function as pad parts, improving the connection reliability with the first connection wiring 51 and the second connection wiring 52. The coil 110A does not include the first connection wiring 51, the second connection wiring 52, the first via wiring 121v, and the second via wiring 122v.

[0073] The coil 110A is covered with the element body 10 (magnetic portion). This configuration can improve the inductance of the inductor element L. The conductive material of the coil 110A may be the same as the conductive material of the bottom surface wiring 11b and the top surface wiring 11t in the first embodiment.

[0074] The organic insulating portion 23 is provided at least on the side surface 110s of the coil 110A that is perpendicular to the first main surface 41a of the main body portion 41. In this embodiment, the organic insulating portion 23 is provided on an outer circumferential surface of a portion of the coil 110A that constitutes one turn of the coil 110A including the outer circumferential end 110e1, an inner circumferential surface of a portion of the coil 110A that constitutes one turn of the coil 110A that includes the inner circumferential end 110e2, and between each turn of the coil 110A. The material of the organic insulating portion 23 is, for example, a photosensitive permanent film.

[0075] The element body 10 covers the coil 110A and the organic insulating section 23. The coil 110A is in contact with the organic insulating section 23 and the element body 10. Specifically, the upper surface 110u of the coil 110A is in contact with the second magnetic layer 102, the lower surface 110b of the coil 110A is in contact with the first magnetic layer 101, and the side surface 110s of the coil 110A is in contact with the organic insulating section 23. With this configuration, the element body 10 can improve the inductance of the inductor element L, and the organic insulating section 23 provided on the side surface 110s of the coil 110A can suppress inter-wire leakage in the XY plane. In particular, since the organic insulating section 23 is provided between each turn of the coil 110A, it is possible to suppress inter-wire leakage that may occur between each turn.

[0076] The first magnetic layer 101 and the second magnetic layer 102 are, for example, a composite material containing an epoxy resin, an Fe-based metal filler, and a glass filler. This makes it possible to obtain high DC superposition characteristics while improving inductance, and the epoxy resin can suppress cracks that may occur in the element body 10. The resin of the first magnetic layer 101 and the second magnetic layer 102 is not limited to epoxy resin, and may be an imide-based or phenol-based resin. The Fe-based metal filler may be an FeSi-based, FeCo-based, FeNi-based, or the like. In addition, the first magnetic layer 101 and the second magnetic layer 102 may use a magnetic material formed by a sputtering method or the like, or a magnetic block may be inserted into the core part of the coil 110A.

[0077] The first connection wiring 51 penetrates the first magnetic layer 101 in the Z direction and connects the outer peripheral end 110e1 of the coil 110A to the first via wiring 121v. The second connection wiring 52 penetrates the first magnetic layer 101 in the Z direction and connects the inner peripheral end 110e2 of the coil 110A to the second via wiring 122v. With this configuration, an electrical signal of the coil 110A can be extracted via the first connection wiring 51 and the second connection wiring 52. The conductive material of the first connection wiring 51 and the second connection wiring 52 is not particularly limited, but may be the same as the conductive material of the coil 110A, for example.

[0078] In this embodiment, the first main surface 41a of the main body 41 includes the first main surface 21a of the inorganic layer 21 and the exposed surfaces of the first via wiring 121v and the second via wiring 122v from the first main surface 21a of the inorganic layer 21, and the entire first main surface 41a of the main body 41 is a flat surface FS made of an inorganic material. With this configuration, when bonding to another electronic component having a flat surface FS, the flat surfaces FS can be bonded in a state of contact with each other. Therefore, the entire device such as a stacked semiconductor package can be made thinner.

[0079] Preferably, as shown in FIG. 7, the thickness t3 of the organic insulating part 23 in the direction perpendicular to the first main surface 41a of the main body part 41 is thicker than the thickness t4 of the coil 110A in the direction perpendicular to the first main surface 41a of the main body part 41. With this configuration, it is possible to further suppress the inter-wire leakage in the XY plane. In particular, it is possible to further suppress the inter-wire leakage that may occur between each turn. The thickness t3 is, for example, 35 μm. The thickness t4 is, for example, 30 μm. The thickness t5 of the inorganic layer 21 is, for example, 1 μm. The thickness t6 of the first magnetic layer 101 is, for example, 20 μm. The thickness t7 of the second magnetic layer 102 is, for example, 50 μm.

[0080] (Manufacturing method of passive component 1A) Next, a method for manufacturing the passive component 1A will be described with reference to Figures 8A to 8I. Figures 8A to 8I are cross-sectional views taken along line VI-VI in Figure 5.

[0081] 8A, an inorganic substrate 1021 corresponding to the inorganic layer 21 is prepared. The inorganic substrate 1021 is, for example, a Si substrate. A first resist layer 1001 is applied to the upper surface of the inorganic substrate 1021, and openings 1001a of a predetermined pattern are formed in the first resist layer 1001 by a photolithography process.

[0082] As shown in Fig. 8B, the inorganic substrate 1021 is etched through the opening 1001a to form the groove 1021a. The etching may be either dry etching or wet etching. In this embodiment, since a Si substrate is used as the inorganic substrate 1021, plasma etching using a fluorine-based gas is used.

[0083] As shown in FIG. 8C, the first resist layer 1001 is peeled off, and a seed layer (not shown) is formed on the upper surface of the inorganic substrate 1021, and a conductive material of the first via wiring 121v and the second via wiring 122v is formed (solid coating) on ​​the upper surface of the seed layer by electrolytic plating so as to cover the groove portion 1021a. As a result, a first via conductor layer 1121v corresponding to the first via wiring 121v and a second via conductor layer 1122v corresponding to the second via wiring 122v are formed in the groove portion 1021a. In addition, a solid film 1020 is formed on the upper surface of the inorganic substrate 1021. In this embodiment, Ti / Cu is used for the seed layer, but W, TiW, Ag, and other seed species and combinations thereof may be selected as necessary.

[0084] 8D, the solid film 1020 is etched away. The solid film 1020 may be removed by CMP or polishing.

[0085] As shown in FIG. 8E, a first magnetic sheet 1101 corresponding to the first magnetic layer 101 is thermocompression bonded to the upper surface of the inorganic substrate 1021. Thereafter, the first magnetic sheet 1101 is ground as necessary. The first magnetic sheet 1101 may be formed by printing, sputtering, or the like. Then, an opening 1101a is formed at a predetermined position of the first magnetic sheet 1101 using a laser. The predetermined position is a position corresponding to the connection portion between the first connection wiring 51 and the first via wiring 121v, and the connection portion between the second connection wiring 52 and the second via wiring 122v. The opening 1101a may be formed by photolithography, etching, or the like.

[0086] As shown in FIG. 8F, a seed layer is formed on the upper surface of the first magnetic sheet 1101 and on the inner surface of the opening 1101a by sputtering. Then, a resist layer (not shown) is applied, and openings of a predetermined pattern are formed in the resist layer by a photolithography process. Then, the seed layer is etched to form a patterned seed layer 600. The seed layer 600 is formed at a predetermined position on the upper surface of the first magnetic sheet 1101 and on the inner surface of the opening 1101a. The predetermined position is a position where the coil 110A is provided. Then, a photosensitive permanent film is applied, and an organic insulating layer 1023 corresponding to the organic insulating part 23 is formed by a photolithography process.

[0087] Here, when etching the seed layer, the resin or magnetic powder on the upper surface of the first magnetic sheet 1101 may be intentionally dissolved by an etching solution. This allows a boundary portion with less magnetic powder to be formed between the first magnetic sheet 1101 and the wiring layer, between the first magnetic sheet 1101 and the second magnetic sheet 1102 described later, and the like. The boundary portion allows an air gap to be formed, and the DC superposition characteristics can be improved. The boundary portion is preferably formed at least in the contact portion between the first magnetic layer 101 and the second magnetic layer 102 in FIG. 6, for example.

[0088] 8G, a first connection wiring conductor layer 1051 corresponding to the first connection wiring 51, a second connection wiring conductor layer 1052 corresponding to the second connection wiring 52, and a coil conductor layer 1110 corresponding to the coil 110A are formed on the upper surface of the seed layer 600 by electrolytic plating. The conductive material of the first connection wiring conductor layer 1051, the second connection wiring conductor layer 1052, and the coil conductor layer 1110 is, for example, Cu. Here, similar to the etching of the seed layer, a boundary portion with less magnetic powder may be formed between the first magnetic sheet 1101 and the wiring layer, between the first magnetic sheet 1101 and the second magnetic sheet 1102, and the like by the electrolytic plating.

[0089] As shown in Fig. 8H, a second magnetic sheet 1102 corresponding to the second magnetic layer 102 is thermocompression bonded so as to cover the coil conductor layer 1110 and the organic insulating portion 23. Thereafter, the second magnetic sheet 1102 is ground as necessary. Thereafter, the inorganic substrate 1021 is polished to expose the end faces of the first via conductor layer 1121v and the end faces of the second via conductor layer 1122v. CMP is preferably used for polishing the inorganic substrate 1021.

[0090] 8I, the substrate is cut into individual pieces along cut lines C. In this way, passive components 1A are manufactured as shown in FIG.

[0091] <Third embodiment> (Configuration of passive component 1B) Fig. 9 is a schematic top view showing a third embodiment of a passive component as seen from the top side. Fig. 10 is a cross-sectional view taken along line XX in Fig. 9. The third embodiment differs from the second embodiment mainly in the configuration of the element body, in that a capacitor element and a resistor element are further provided, and in that the second main surface of the body is a flat surface. These different configurations will be described below. The other configurations are the same as those of the second embodiment, and the same reference numerals as those of the second embodiment will be used and their description will be omitted.

[0092] The passive component 1B is an electronic component including passive elements, an inductor element L, a capacitor element C, and a resistor element R. The inductor element L and the capacitor element C are electrically connected in series. The resistor element R is electrically independent from the inductor element L and the capacitor element C. As shown in FIGS. 9 and 10, when viewed in the Z direction, the inductor element L and the capacitor element C are disposed on the first end face 100e1 side with respect to the center of the element body 10, and the resistor element R is disposed on the second end face 100e2 side with respect to the center of the element body 10.

[0093] The main body 41 includes an element body 10 and an inorganic layer 21 provided on the bottom surface 100b of the element body 10. The element body 10 includes a first insulating layer 111 provided on the second main surface 21b of the inorganic layer, a capacitor element C, a third connection wiring 53 and a fourth connection wiring 54 provided inside the first insulating layer 111, a second insulating layer 112 provided on the first insulating layer 111, and an inductor element L, a fifth connection wiring 55 and a sixth connection wiring 56 provided inside the second insulating layer 112.

[0094] The first insulating layer 111 electrically insulates the capacitor element C from the resistor element R. The material of the first insulating layer 111 is not particularly limited, but may be, for example, SiO 2 The capacitor element C includes a first capacitor electrode 71 and a second capacitor electrode 72 facing each other in the Z direction, and a dielectric layer 73 disposed between the first capacitor electrode 71 and the second capacitor electrode 72. The first capacitor electrode 71 is provided on the second main surface 21b of the inorganic layer 21 so as to cover the first via wiring 121v and is connected to the first via wiring 121v. The dielectric layer 73 is provided so as to cover the first capacitor electrode 71. An end of the dielectric layer 73 on the forward X-direction side extends to the vicinity of the second end face 100e2 of the element body 10. The second capacitor electrode 72 is provided on the dielectric layer 73. The second capacitor electrode 72 is disposed so as to overlap the first capacitor electrode 71 when viewed from the Z direction.

[0095] The conductive material of the first capacitor electrode 71 and the second capacitor electrode 72 is not particularly limited, and may be, for example, Al. Preferably, the conductive material of the first capacitor electrode 71 and the second capacitor electrode 72 is different from the conductive materials of the first and second via wirings 121v, 122v and the coil 110A. By using different conductive materials for the first capacitor electrode 71 and the second capacitor electrode 72, through which no direct current flows, and the first and second via wirings 121v, 122v and the coil 110A through which a direct current flows, the manufacturing cost can be reduced without deteriorating the characteristics of the passive component 1B. Specifically, since Al has low conductivity but is inexpensive, it is preferable to use it for the first and second capacitor electrodes 71, 72 of the capacitor element C, which is a voltage element. In addition, Cu, which has high conductivity, is preferable to use for the coil 110A and the first and second via wirings 121v, 122v of the inductor element L, which is a current element. This makes it possible to reduce the manufacturing cost without degrading the characteristics of the passive component 1B.

[0096] The material of the dielectric layer 73 is not particularly limited, and may be, for example, SiO 2 The material of the dielectric layer 73 is, for example, HfO 2 , Y 2 O 3 Alternatively, the dielectric layer 73 may be made of a high-k material such as SiO 2 . This can increase the capacitance of the capacitor element C. Preferably, the material of the dielectric layer 73 is the same as the material of the second insulating layer 112. This can reduce the manufacturing cost of the passive component 1B because the material of the dielectric layer 73 is the same as the material of the second insulating layer 112 that covers at least the coil 110A. In addition, residual stress that may occur in the passive component 1B can be reduced.

[0097] The second insulating layer 112 electrically insulates the inductor element L from the resistor element R. The material of the second insulating layer 112 is an insulating inorganic material, such as SiO 2 The second insulating layer 112 may be made of a magnetic material.

[0098] The third connection wiring 53 penetrates the first insulating layer 111 in the Z direction and connects the second capacitor electrode 72 and the outer peripheral end 110e1 of the coil 110A. The fourth connection wiring 54 penetrates the first insulating layer 111 and the dielectric layer 73 in the Z direction and connects the second via wiring 122v and the sixth connection wiring 56. The fifth connection wiring 55 penetrates the second insulating layer 112 in the Z direction. The end face of the fifth connection wiring 55 on the reverse Z direction side is connected to the inner peripheral end 110e2 of the coil 110A, and the end face of the fifth connection wiring 55 on the forward Z direction side is exposed from the upper surface of the second insulating layer 112 (the top surface 100t of the element body 10). The coil 110A does not include the third connection wiring 53 and the fifth connection wiring 55. The sixth connection wiring 56 penetrates the second insulating layer 112 in the Z direction. An end face of the sixth connection wiring 56 on the reverse Z direction side is connected to the upper surface of the fourth connection wiring 54 , and an end face of the sixth connection wiring 56 on the forward Z direction side is exposed from the upper surface of the second insulating layer 112 .

[0099] The conductive material of the third connection wiring 53 and the fourth connection wiring 54 is not particularly limited, but is, for example, the same as the conductive material of the coil 110A. The conductive material of the fifth connection wiring 55 and the sixth connection wiring 56 is a conductive inorganic material.

[0100] The first via wiring 121v, the capacitor element C, the third connection wiring 53, the coil 110A, and the fifth connection wiring 55 are connected in this order, so that the capacitor element C and the inductor element L are electrically connected in series.

[0101] The second via wiring 122v, the fourth connection wiring 54, and the sixth connection wiring 56 are connected in this order to form the conductive wiring 81. The conductive wiring 81 extends from the first main surface 41a to the second main surface 41b of the main body 41, and both ends in the extending direction are exposed from the first main surface 41a and the second main surface 41b of the main body 41. According to this configuration, since an electric signal can be taken out from both the first main surface 41a and the second main surface 41b of the main body 41 through the conductive wiring 81, electronic components can be stacked on both the first main surface 41a side and the second main surface 41b side of the main body 41. In addition, the conductive wiring 81 is electrically independent from the inductor element L and the capacitor element C. According to this configuration, an electric signal other than the electric signals of the inductor element L and the capacitor element C can be taken out through the conductive wiring 81. In this embodiment, the conductive wiring 81 is a resistor element R.

[0102] At least a part of the second main surface 41b of the main body 41 is a flat surface FS made of an inorganic material. In this embodiment, the entire surface of the second main surface 41b of the main body 41 is a flat surface FS made of an inorganic material. Specifically, the upper surface of the second insulating layer 112 (the top surface 100t of the element body 10), the exposed surface of the fifth connection wiring 55 from the upper surface of the second insulating layer 112, and the exposed surface of the sixth connection wiring 56 from the upper surface of the second insulating layer 112 are flat surfaces FS made of an inorganic material. According to this configuration, since at least a part of the second main surface 41b of the main body 41 is a flat surface FS made of an inorganic material, when bonding to another electronic component or the like having a flat surface FS, the flat surface FS of the second main surface 41b of the main body 41 can be bonded in a state of contact with the flat surface FS of the electronic component or the like. Therefore, the entire device such as a stacked semiconductor package can be further thinned.

[0103] Preferably, the passive component 1B includes one or more passive elements, and the one or more passive elements are at least one of an inductor element L, a capacitor element C, and a resistor element R. With this configuration, at least one of the inductor element L, the capacitor element C, and the resistor element R can be included in one passive component 1B, eliminating the need to prepare multiple passive components each including each element individually. This allows the overall size of a device such as a stacked semiconductor package to be reduced.

[0104] 10, a thickness t9 of the inorganic layer 21 in a direction perpendicular to the first main surface 41a of the body portion 41 is preferably smaller than a thickness t8 of the capacitor element C in a direction perpendicular to the first main surface 41a of the body portion 41. With this configuration, the passive component 1B can be made thinner.

[0105] (Manufacturing method of passive component 1B) Next, a method for manufacturing the passive component 1B will be described with reference to Figures 11A to 11J, which are views corresponding to the cross section taken along line XX in Figure 9.

[0106] 11A, an inorganic substrate 1021 corresponding to the inorganic layer 21 is prepared. The inorganic substrate 1021 is, for example, a Si substrate. A first resist layer 1001 is applied to the upper surface of the inorganic substrate 1021, and openings 1001a of a predetermined pattern are formed in the first resist layer 1001 by a photolithography process.

[0107] 11B, the inorganic substrate 1021 is etched through the opening 1001a to form the groove 1021a. The etching may be either dry etching or wet etching. In this embodiment, since a Si substrate is used as the inorganic substrate 1021, plasma etching using a fluorine-based gas is used.

[0108] As shown in Fig. 11C, the first resist layer 1001 is peeled off, and a seed layer (not shown) is formed on the upper surface of the inorganic substrate 1021, and a conductive material of the first via wiring 121v and the second via wiring 122v is formed (solid coating) on ​​the upper surface of the seed layer by electrolytic plating so as to cover the groove portion 1021a. As a result, a first via conductor layer 1121v corresponding to the first via wiring 121v and a second via conductor layer 1122v corresponding to the second via wiring 122v are formed in the groove portion 1021a. In addition, a solid film 1020 is formed on the upper surface of the inorganic substrate 1021. In this embodiment, Ti / Cu is used for the seed layer, but W, TiW, Ag, and other seed species and combinations thereof may be selected as necessary.

[0109] 11D, the solid film 1020 is etched away. The solid film 1020 may be removed by CMP or polishing.

[0110] As shown in FIG. 11E, a first capacitor electrode conductive layer 1071 corresponding to the first capacitor electrode 71 is formed on the inorganic substrate 1021 so as to cover the first via conductive layer 1121v and the second via conductive layer 1122v. Specifically, for example, an Al film is formed on the upper surface of the inorganic substrate 1021 using a sputtering method. Then, a resist layer (not shown) is applied, and openings of a predetermined pattern are formed in the resist layer by a photolithography process. Then, the Al film is etched to form a patterned first capacitor electrode conductive layer 1071. Then, the resist layer is peeled off.

[0111] 11F, a dielectric material layer 1073 corresponding to the dielectric layer 73 is formed on the inorganic substrate 1021 so as to cover the first capacitor electrode conductive layer 1071, and a second capacitor electrode conductive layer 1072 corresponding to the second capacitor electrode 72 is formed on the dielectric material layer 1073. The second capacitor electrode conductive layer 1072 is formed so as to overlap the first capacitor electrode conductive layer 1071 when viewed from the Z direction.

[0112] Specifically, a dielectric material layer is formed on the inorganic substrate 1021 by vapor deposition so as to cover the first capacitor electrode conductor layer 1071. The material of the dielectric material layer is, for example, SiO 2 Then, a resist layer (not shown) is applied, and a predetermined pattern of openings is formed in the resist layer by a photolithography process. Then, the dielectric material layer is etched to form a patterned dielectric material layer 1073. At this time, an opening 1073a is formed in the dielectric material layer 1073 so that the upper surface of the second via conductor layer 1122v is exposed. Then, the resist layer is peeled off. Then, for example, an Al film is formed on the upper surface of the dielectric material layer 1073 and the upper surface of the inorganic substrate 1021 by using a sputtering method. Then, a resist layer (not shown) is applied, and a predetermined pattern of openings is formed in the resist layer by a photolithography process. Then, the Al film is etched to form a patterned second capacitor electrode conductor layer 1072. Then, the resist layer is peeled off. The dielectric material layer 1073 and the second capacitor electrode conductor layer 1072 may be alternately stacked. This can increase the capacitance of the capacitor element C.

[0113] 11G, a first insulating material layer 1111 corresponding to the first insulating layer 111 is formed so as to cover the second capacitor electrode conductive layer 1072 and the dielectric material layer 1073. Specifically, the first insulating material layer is formed by using a chemical vapor deposition (CVD) method so as to cover the second capacitor electrode conductive layer 1072 and the dielectric material layer 1073. The material of the first insulating material layer is, for example, SiO 2 Then, a resist layer (not shown) is applied, and openings of a predetermined pattern are formed in the resist layer by a photolithography process. The first insulating material layer is then etched to form a patterned first insulating material layer 1111. At this time, openings 1111a are formed at positions corresponding to the positions where the third connection wiring 53 and the fourth connection wiring 54 are to be provided.

[0114] Thereafter, a third connection wiring conductor layer 1053 corresponding to the third connection wiring 53 and a fourth connection wiring conductor layer 1054 corresponding to the fourth connection wiring 54 are formed in the opening 1111a, and a coil conductor layer 1110 is formed on the upper surface of the third connection wiring conductor layer 1053 and on the first insulating material layer 1111. The third connection wiring conductor layer 1053, the fourth connection wiring conductor layer 1054, and the coil conductor layer 1110 may be formed by a semi-additive method. Instead of the semi-additive method, a known method such as a subtractive method, a full additive method, or a printing method of a conductive paste may be used. In this embodiment, Ti / Cu is used for the seed layer, but W, TiW, Ag, and other seed species and combinations thereof may be selected as necessary.

[0115] As shown in FIG. 11H, a second insulating material layer 1112 corresponding to the second insulating layer 112 is formed so as to cover the coil conductor layer 1110. Specifically, the second insulating material layer is formed by a CVD method so as to cover the coil conductor layer 1110. Then, a resist layer (not shown) is applied, and openings of a predetermined pattern are formed in the resist layer by a photolithography process. Then, the second insulating material layer is etched to form a patterned second insulating material layer 1112. At this time, openings 1112a are formed at positions corresponding to the positions where the fifth connection wiring 55 and the sixth connection wiring 56 are to be provided.

[0116] Thereafter, a fifth connection wiring conductor layer 1055 corresponding to the fifth connection wiring 55 and a sixth connection wiring conductor layer 1056 corresponding to the sixth connection wiring 56 are formed in the opening 1112a. Specifically, the fifth connection wiring conductor layer 1055 and the sixth connection wiring conductor layer 1056 are formed by filling plating. At this time, plating is also formed on the second insulating material layer 1112. The conductive material of the fifth connection wiring conductor layer 1055 and the sixth connection wiring conductor layer 1056 is, for example, Cu.

[0117] As shown in FIG. 11I, the plating on the second insulating material layer 1112, the fifth connection wiring conductor layer 1055, and the sixth connection wiring conductor layer 1056 are polished to expose the second insulating material layer 1112, the end face of the fifth connection wiring conductor layer 1055, and the end face of the sixth connection wiring conductor layer 1056. As a result, the upper surface of the second insulating material layer 1112, the end face of the fifth connection wiring conductor layer 1055, and the end face of the sixth connection wiring conductor layer 1056 are flattened. CMP is preferable for the above polishing. After that, the inorganic substrate 1021 is polished to expose the end face of the first via conductor layer 1121v and the end face of the second via conductor layer 1122v. As a result, the lower surface of the inorganic substrate 1021, the end face of the first via conductor layer 1121v, and the end face of the second via conductor layer are flattened. CMP is preferable for polishing the inorganic substrate 1021.

[0118] 11J, the substrate is cut into individual pieces along the cut lines C. In this way, passive components 1B are manufactured as shown in FIG.

[0119] <Fourth embodiment> (Configuration of stacked semiconductor package 7) Fig. 12 is a schematic cross-sectional view showing a stacked semiconductor package 7. As shown in Fig. 12, the stacked semiconductor package 7 includes a second substrate 220, a first substrate 210 stacked in a first direction D1 on the second substrate 220, and a three-dimensional device 4 stacked in the first direction D1 on the first substrate 210. The first direction D1 is the upward direction in the drawing.

[0120] The first substrate 210 is made of, for example, Si or SiO 2The first substrate 210 may be an inorganic substrate (so-called a silicon interposer substrate or a glass interposer substrate) made of FR4 (Flame Retardant Type 4), epoxy, polyimide, or the like (so-called an organic package substrate). Wiring is provided inside or on the main surface of the first substrate 210, and is electrically connected to the three-dimensional device 4. The main surface of the first substrate 210 may be provided with conductive members such as external terminals, conductive bumps, conductive pillars, and solder. A similar conductive member may also be provided on the main surface of the three-dimensional device 4 facing the first substrate 210.

[0121] The second substrate 220 is an inorganic substrate made of, for example, Si or SiO2, similar to the first substrate 210, or an organic substrate made of, for example, FR4, epoxy, polyimide, or the like. The second substrate 220 has lower design precision than the first substrate 210. Wiring is provided inside and on the main surface of the second substrate 220, and is electrically connected to the first substrate 210. The main surface of the second substrate 220 may be provided with conductive members such as external terminals, conductive bumps, conductive pillars, and solder. A similar conductive member may also be provided on the main surface of the first substrate 210 facing the second substrate 220.

[0122] The three-dimensional device 4 includes a passive component 1B having a flat surface FS made of an inorganic material, and a first semiconductor integrated circuit component 301 and a second semiconductor integrated circuit component 302 bonded to the flat surface FS. The passive component 1B is the same as the passive component 1B described in the third embodiment. The first semiconductor integrated circuit component 301 and the second semiconductor integrated circuit component 302 are electronic components such as, for example, an integrated circuit (IC), a central processing unit (CPU), a power management IC (PMIC), a memory, a transistor, etc.

[0123] The first main surface 301a of the first semiconductor integrated circuit component 301 facing the passive component 1B includes a flat surface FS. The second main surface 41b of the body portion 41 of the passive component 1B facing the first semiconductor integrated circuit component 301 includes a flat surface FS. The flat surface FS of the first semiconductor integrated circuit component 301 and the flat surface FS of the second main surface 41b of the passive component 1B are bonded in a contacting state. Similarly, the first main surface 302a of the second semiconductor integrated circuit component 302 facing the passive component 1B includes a flat surface FS. The first main surface 41a of the body portion 41 of the passive component 1B facing the second semiconductor integrated circuit component 302 includes a flat surface FS. The flat surface FS of the second semiconductor integrated circuit component 302 and the flat surface FS of the first main surface 41a of the passive component 1B are bonded in a contacting state. With this configuration, a thin three-dimensional device 4 can be obtained.

[0124] In addition, when the flat surface FS of the semiconductor integrated circuit component and the flat surface FS of the passive component cannot be separated, the surface roughness of the flat surface FS may be calculated from the cross section of the three-dimensional device. Specifically, the cross section of the joint part of the flat surface FS is exposed by a known method such as ion milling, and an image of the joint part is obtained using a transmission electron microscope (TEM). In this case, the magnification is preferably 300K or more. The interface of the joint part of the flat surface FS can be recognized from the difference in grain boundaries. Using the obtained image, a straight line (a line drawn by the least squares method) is drawn at a position corresponding to the interface. The surface roughness can be obtained by measuring Ra (arithmetic mean roughness) for this straight line.

[0125] 12, the number of passive components may be two or more, and the number of semiconductor integrated circuit components may be one or three or more. In addition, the order of stacking the semiconductor integrated circuit components and the passive components in the first direction D1 is not particularly limited.

[0126] The first main surface 211 of the first substrate 210 facing the three-dimensional device 4 and the first main surface of the three-dimensional device 4 facing the first substrate 210 (the second main surface 302b of the second semiconductor integrated circuit component 302) are connected to each other via a connection member 5 while being spaced apart. The first main surface 221 of the second substrate 220 facing the first substrate 210 and the second main surface 212 of the first substrate 210 facing the second substrate 220 are connected to each other via a connection member 6 while being spaced apart. The connection members 5 and 6 are, for example, solder, conductive bumps, conductive pillars, etc.

[0127] (Modification) FIG. 13 is a schematic cross-sectional view showing a three-dimensional device 4A according to a modified example. As shown in FIG. 13, the three-dimensional device 4A is composed of only passive components. The three-dimensional device 4A includes a passive component 1B having a flat surface FS made of an inorganic material, and a passive component 1C bonded to the flat surface FS. The passive components 1B and 1C are stacked. The passive component 1B is the same as the passive component 1B described in the third embodiment. The passive component 1C differs from the passive component 1B described in the third embodiment in the position of the exposed surface from the second main surface 41b of the main body 41 in the fifth connection wiring 55. Specifically, in the passive component 1C, the fifth connection wiring 55 is exposed from the second main surface 41b of the main body 41 at a position corresponding to the first via wiring 121v of the passive component 1B to be stacked. The flat surface FS of the second main surface 41b of the passive component 1C and the flat surface FS of the first main surface 41a of the passive component 1B are bonded in a contacting state. This allows the three-dimensional device 4A to be thin. The passive components included in the three-dimensional device 4A are not limited to the passive components 1B and 1C, and may be other passive components having flat surfaces. The three-dimensional device 4A may also include three or more passive components.

[0128] The present disclosure is not limited to the above-described embodiments, and design modifications are possible without departing from the scope of the present disclosure. For example, the respective characteristic points of the first to fourth embodiments may be combined in various ways.

[0129] In the first to fourth embodiments, the entire surface of the first main surface of the inorganic layer and the entire surfaces of the first via wiring and the second via wiring exposed from the first main surface of the inorganic layer were flat surfaces, but only at least a portion of the first main surface of the inorganic layer may be a flat surface, only at least a portion of the exposed surface may be a flat surface, or only a portion of the first main surface of the inorganic layer and a portion of the exposed surface may be flat surfaces.

[0130] In the second embodiment, the coil is a planar spiral formed of one layer, but it may have a plurality of layers of planar spiral coil wiring, which can improve inductance.

[0131] In the fourth embodiment, the passive components of the three-dimensional device are the same as those in the third embodiment, but the type of passive components is not particularly limited.

[0132] <1> A body portion having a first major surface; a passive element at least a portion of which is provided inside the main body; A passive component, wherein the first main surface includes a flat surface at least partially made of an inorganic material and having a surface roughness of 1 / 1000 or less of the thickness of the main body in a direction perpendicular to the first main surface, or 10 nm or less. <2> the main body portion includes an inorganic layer made of an inorganic material having a first main surface and a second main surface opposed to each other, and a through wiring penetrating the inorganic layer from the first main surface to the second main surface of the inorganic layer, the first main surface of the inorganic layer and an exposed surface of the through wiring exposed from the first main surface of the inorganic layer constitute the first main surface of the main body portion. <1> 2. A passive component according to claim 1 . <3> the through wiring is made of an inorganic material, The exposed surface of the through-hole wiring constitutes at least a part of the flat surface. <2> 2. A passive component according to claim 1 . <4> The inorganic layer is amorphous or single crystalline; <2> or <3> 2. A passive component according to claim 1 . <5> the passive element includes a coil; The coil has a central axis parallel to the first main surface of the body portion. <1> from <4> 13. A passive component according to any one of the preceding claims. <6> the main body portion includes an inorganic layer made of an inorganic material having a first main surface and a second main surface opposed to each other, and an organic insulating layer provided on the second main surface of the inorganic layer; the first main surface of the inorganic layer constitutes at least a part of the first main surface of the main body portion, the passive element includes a coil at least a portion of which is provided inside the organic insulating layer; the coil contacts both the inorganic layer and the organic insulating layer; <1> from <5> 13. A passive component according to any one of the preceding claims. <7> the main body portion includes an inorganic layer having a first main surface and a second main surface opposed to each other, the first main surface of the inorganic layer constitutes at least a part of the first main surface of the main body portion, a thickness of the inorganic layer in a direction perpendicular to the first main surface of the body portion is smaller than a thickness of the passive element in a direction perpendicular to the first main surface of the body portion; <1> from <6> 13. A passive component according to any one of the preceding claims. <8> the main body portion includes an inorganic layer having a first main surface and a second main surface opposed to each other, the first main surface of the inorganic layer constitutes at least a part of the first main surface of the main body portion, the passive element includes a coil having a central axis parallel to the first main surface of the body portion, a thickness of the inorganic layer in a direction perpendicular to the first main surface of the main body is smaller than a thickness of the coil in a direction perpendicular to the first main surface of the main body; <1> from <7> 13. A passive component according to any one of the preceding claims. <9> The main body portion has a second main surface opposite to the first main surface, The insulating material is further provided on the second main surface of the main body and is made of an organic insulating resin. At least a portion of the passive element is exposed from the second main surface of the body portion, an exposed portion of the passive element exposed from the second main surface of the body portion is covered with the insulator; <1> from <8> 13. A passive component according to any one of the preceding claims. <10> the passive element includes a coil; The coil has a central axis perpendicular to the first main surface of the body. <1> from <4> 13. A passive component according to any one of the preceding claims. <11> the main body portion includes an inorganic layer having a first main surface and a second main surface opposing each other, and a magnetic portion provided on the second main surface of the inorganic layer, the first main surface of the inorganic layer constitutes at least a part of the first main surface of the main body portion, the passive element includes a coil; The coil is covered with the magnetic portion. <1> from <4> 13. A passive component according to any one of the preceding claims. <12> The coil is wound along a plane parallel to the first principal surface, the main body further includes an organic insulating portion provided at least on a side surface of the coil that is perpendicular to the first main surface of the main body, the magnetic portion covers the coil and the organic insulating portion, The coil contacts the organic insulating portion and the magnetic portion. <11> 2. A passive component according to claim 1 . <13> a thickness of the organic insulating portion in a direction perpendicular to the first main surface of the main body portion is greater than a thickness of the coil in a direction perpendicular to the first main surface of the main body portion; <12> 2. A passive component according to claim 1 . <14> The main body further has a second main surface opposite to the first main surface, The second main surface includes a flat surface at least partially made of an inorganic material. <1> from <4> 13. A passive component according to any one of the preceding claims. <15> further comprising one or more passive elements; The one or more passive elements are at least one of an inductor element, a capacitor element, and a resistor element. <14> 2. A passive component according to claim 1 . <16> the one or more passive elements include at least an inductor element and a capacitor element; the main body further includes a conductive wiring extending from the first main surface to the second main surface of the main body, both ends of the conductive wiring in an extending direction being exposed from the first main surface and the second main surface of the main body; the conductive wiring is electrically independent from the inductor element and the capacitor element; <15> 2. A passive component according to claim 1 . <17> the main body portion includes an inorganic layer having a first main surface and a second main surface opposing each other, and a through wiring that penetrates the inorganic layer from the first main surface to the second main surface of the inorganic layer, the first main surface of the inorganic layer constitutes at least a part of the first main surface of the main body portion, the one or more passive elements include at least an inductor element and a capacitor element; the inductor element includes a coil; The capacitor element includes two opposing capacitor electrodes and a dielectric layer disposed between the two capacitor electrodes; The conductive materials of the two capacitor electrodes are different from the conductive materials of the through-hole wiring and the coil, the main body includes an insulating layer covering at least the coil, and the material of the dielectric layer is the same as the material of the insulating layer. <15> or <16> 2. A passive component according to claim 1 . <18> <1> from <17> A passive component according to any one of the above items, a semiconductor integrated circuit component bonded to the planar surface of the passive component. <19> <1> from <17> A passive component according to any one of the above items, a passive component bonded to the planar surface of the passive component. <20> preparing an inorganic layer made of an inorganic material and having a first main surface and a second main surface opposed to each other; providing a passive element on the second main surface side of the inorganic layer to form a main body including the inorganic layer and at least a portion of the passive element; and polishing the first main surface of the inorganic layer to provide a flat surface having a surface roughness of 1 / 1000 or less of the thickness of the main body portion in a direction perpendicular to the first main surface, or 10 nm or less. [Explanation of symbols]

[0133] 1, 1A, 1B Passive Components 4. Three-dimensional devices 7 Stacked semiconductor packages 10 Base 11b Bottom wiring 11t Top wiring 13 First through wiring 14 Second through-hole wiring 21 Inorganic layer 21a, 21b: first main surface and second main surface of inorganic layer 22 Insulators 23 Organic Insulation Section 41 Main body 41a, 41b: first main surface and second main surface of the main body 51~56 1st~6th connection wiring 71, 72 First and second capacitor electrodes 73 Dielectric Layer 81 Continuity wiring 110, 110A coil 110e1, 110e2 Outer edge, inner end 121v, 122v 1st and 2nd via wiring (through wiring) 121a Exposed surface 210, 220 First and second substrates 301, 302 First and second semiconductor integrated circuit components C Capacitor element L inductor element R Resistance element t1~t9 Thickness D1 1st direction FS flat surface AX axis

Claims

1. a body portion having a first major surface; a passive element at least a portion of which is provided inside the main body; the first main surface includes a flat surface at least partially made of an inorganic material and having a surface roughness of 1 / 1000 or less of the thickness of the main body in a direction perpendicular to the first main surface, or 10 nm or less; the main body portion includes an inorganic layer made of an inorganic material having a first main surface and a second main surface opposed to each other, and a through wiring that penetrates the inorganic layer from the first main surface to the second main surface of the inorganic layer, the first main surface of the inorganic layer and an exposed surface of the through wiring exposed from the first main surface of the inorganic layer constitute the first main surface of the body portion, A passive component, wherein the inorganic layer is amorphous or single crystalline.

2. a body portion having a first major surface; a passive element at least a portion of which is provided inside the main body; the first main surface includes a flat surface at least partially made of an inorganic material and having a surface roughness of 1 / 1000 or less of the thickness of the main body in a direction perpendicular to the first main surface, or 10 nm or less; the passive element includes a coil; The coil is a passive component having a central axis parallel to the first main surface of the body.

3. a body portion having a first major surface; a passive element at least a portion of which is provided inside the main body; the first main surface includes a flat surface at least partially made of an inorganic material and having a surface roughness of 1 / 1000 or less of the thickness of the main body in a direction perpendicular to the first main surface, or 10 nm or less; the main body portion includes an inorganic layer made of an inorganic material having a first main surface and a second main surface opposed to each other, and an organic insulating layer provided on the second main surface of the inorganic layer; the first main surface of the inorganic layer constitutes at least a part of the first main surface of the main body portion; the passive element includes a coil at least a portion of which is provided inside the organic insulating layer; The coil is a passive component in contact with both the inorganic layer and the organic insulating layer.

4. a body portion having a first major surface; a passive element at least a portion of which is provided inside the main body; the first main surface includes a flat surface at least partially made of an inorganic material and having a surface roughness of 1 / 1000 or less of the thickness of the main body in a direction perpendicular to the first main surface, or 10 nm or less; the main body portion includes an inorganic layer having a first main surface and a second main surface opposed to each other, the first main surface of the inorganic layer constitutes at least a part of the first main surface of the main body portion; the passive element includes a coil having a central axis parallel to the first main surface of the body portion, A passive component, wherein a thickness of the inorganic layer in a direction perpendicular to the first main surface of the body portion is thinner than a thickness of the coil in the direction perpendicular to the first main surface of the body portion.

5. a body portion having a first major surface; a passive element at least a portion of which is provided inside the main body; the first main surface includes a flat surface at least partially made of an inorganic material and having a surface roughness of 1 / 1000 or less of the thickness of the main body in a direction perpendicular to the first main surface, or 10 nm or less; The main body portion has a second main surface opposite to the first main surface, The insulating material is further provided on the second main surface of the main body and is made of an organic insulating resin. At least a portion of the passive element is exposed from the second main surface of the body portion, A passive component, wherein an exposed portion of the passive element exposed from the second main surface of the body is covered with the insulator.

6. a body portion having a first major surface; a passive element at least a portion of which is provided inside the main body; the first main surface includes a flat surface at least partially made of an inorganic material and having a surface roughness of 1 / 1000 or less of the thickness of the main body in a direction perpendicular to the first main surface, or 10 nm or less; the passive element includes a coil; The coil is a passive component having a central axis perpendicular to the first main surface of the body.

7. a body portion having a first major surface; a passive element at least a portion of which is provided inside the main body; the first main surface includes a flat surface at least partially made of an inorganic material and having a surface roughness of 1 / 1000 or less of the thickness of the main body in a direction perpendicular to the first main surface, or 10 nm or less; the main body portion includes an inorganic layer having a first main surface and a second main surface opposing each other, and a magnetic portion provided on the second main surface of the inorganic layer; the first main surface of the inorganic layer constitutes at least a part of the first main surface of the main body portion; the passive element includes a coil; The coil is covered with the magnetic portion, forming a passive component.

8. a body portion having a first major surface; one or more passive elements at least partially disposed within the body; the first main surface includes a flat surface at least partially made of an inorganic material and having a surface roughness of 1 / 1000 or less of the thickness of the main body in a direction perpendicular to the first main surface, or 10 nm or less; The main body further has a second main surface opposite to the first main surface, the second main surface includes a flat surface at least partially made of an inorganic material, the one or more passive elements are at least one of an inductor element, a capacitor element, and a resistor element; the one or more passive elements include at least an inductor element and a capacitor element; the main body portion further includes a conductive wiring extending from the first main surface toward the second main surface of the main body portion and exposed from each of the first main surface and the second main surface of the main body portion; The conductive wiring is a passive component that is electrically independent from the inductor element and the capacitor element.

9. a body portion having a first major surface; one or more passive elements at least partially disposed within the body; the first main surface includes a flat surface at least partially made of an inorganic material and having a surface roughness of 1 / 1000 or less of the thickness of the main body in a direction perpendicular to the first main surface, or 10 nm or less; The main body further has a second main surface opposite to the first main surface, the second main surface including a flat surface at least partially made of an inorganic material, the one or more passive elements are at least one of an inductor element, a capacitor element, and a resistor element; the main body portion includes an inorganic layer having a first main surface and a second main surface opposed to each other, and a through wiring that penetrates the inorganic layer from the first main surface to the second main surface of the inorganic layer, the first main surface of the inorganic layer constitutes at least a part of the first main surface of the main body portion; the one or more passive elements include at least an inductor element and a capacitor element; the inductor element includes a coil; The capacitor element includes two opposing capacitor electrodes and a dielectric layer disposed between the two capacitor electrodes; A passive component, wherein the conductive material of the two capacitor electrodes is different from the conductive material of each of the through wiring and the coil, the main body portion includes an insulating layer covering at least the coil, and the material of the dielectric layer is the same as the material of the insulating layer.

10. a main body having a first main surface and a second main surface opposite to the first main surface; a passive element at least a portion of which is provided inside the main body; the first main surface includes a flat surface at least partially made of an inorganic material and having a surface roughness of 1 / 1000 or less of the thickness of the main body in a direction perpendicular to the first main surface, or 10 nm or less; the second main surface includes a flat surface at least partially made of an inorganic material, the passive element includes a capacitor element; the main body portion further includes a conductive wiring extending from the first main surface toward the second main surface of the main body portion and exposed from each of the first main surface and the second main surface of the main body portion; The conductive wiring is electrically independent from the capacitor element.

11. the main body portion includes an inorganic layer made of an inorganic material having a first main surface and a second main surface opposed to each other, and a through wiring that penetrates the inorganic layer from the first main surface to the second main surface of the inorganic layer, A passive component according to claim 2 , wherein the first main surface of the inorganic layer and an exposed surface of the through wiring exposed from the first main surface of the inorganic layer constitute the first main surface of the main body portion.

12. the through wiring is made of an inorganic material, The passive component of claim 11 , wherein the exposed surface of the feedthrough wiring forms at least a portion of the planar surface.

13. the main body portion includes an inorganic layer having a first main surface and a second main surface opposed to each other, the first main surface of the inorganic layer constitutes at least a part of the first main surface of the main body portion; 11. The passive component according to claim 1, wherein a thickness of the inorganic layer in a direction perpendicular to the first main surface of the body portion is thinner than a thickness of the passive element in a direction perpendicular to the first main surface of the body portion.

14. The coil is wound along a plane parallel to the first principal surface, The main body further includes an organic insulating portion provided at least on a side surface of the coil that is perpendicular to the first main surface of the main body, the magnetic portion covers the coil and the organic insulating portion, The passive component of claim 7 , wherein the coil contacts the organic insulating portion and the magnetic portion.

15. The passive component according to claim 14 , wherein a thickness of the organic insulating portion in a direction perpendicular to the first main surface of the body is greater than a thickness of the coil in a direction perpendicular to the first main surface of the body.

16. A passive component according to any one of claims 1 to 10; a semiconductor integrated circuit component bonded to the planar surface of the passive component.

17. A passive component according to any one of claims 1 to 10; a passive component bonded to the planar surface of the passive component.

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