Heat treatment apparatus, heat treatment method, and computer storage medium

Abstract

To prevent the occurrence of a defect in a substrate due to a substance generated in a treatment space during heating without impairing substrate in-plane uniformity of a coating film after heat treatment.SOLUTION: A heat treatment device heating a substrate formed with a coating film comprises: a treatment container that forms a treatment space for accommodating the substrate; a heating plate having a mounting surface on which the substrate accommodated in the treatment space is mounted, and a heating unit that heats the substrate; an adjustment mechanism that adjusts the height of the substrate with respect to the heating plate; an exhaust unit that exhausts air from the treatment space; and a control unit. The control unit performs control to execute: (A) a step of adjusting the height of the substrate with respect to the heating plate to a predetermined height separated from the heating plate by a predetermined distance and starting heating treatment on the substrate; and (B) a step of, when the heating treatment advances to a predetermined degree, decreasing the height of the substrate with respect to the heating plate compared to the predetermined height, mounting the substrate on the heating plate or bringing the substrate into proximity to the heating plate, and switching the exhaust of air from the treatment space from OFF to ON.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a heat treatment apparatus, a heat treatment method, and a computer storage medium.

Background Art

[0002] The heat treatment apparatus disclosed in Patent Document 1 heats a substrate with a coating film formed thereon in a processing container, and includes a placement portion provided in the processing container for placing the substrate, and a heating portion for heating the substrate placed on the placement portion. Further, in Patent Document 1, the processing container has a lid portion constituting a ceiling portion, and an exhaust chamber is formed between an upper surface portion and a lower surface portion of the lid portion. An outer peripheral exhaust port communicating with the exhaust chamber is formed in a peripheral portion of the lower surface portion of the lid portion. A central exhaust port is formed in a central portion of the lower surface portion of the lid surface portion. One end side of a central exhaust pipe provided so as to penetrate the exhaust chamber is connected to the central exhaust port.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure suppresses the occurrence of defects on the substrate caused by substances generated in the processing space during heating without impairing the in-plane uniformity of the coating film on the substrate after heat treatment.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a heat treatment apparatus for heating a substrate on which a coating film is formed, comprising: a processing container forming a processing space for housing the substrate; a heating plate having a mounting surface on which the substrate housed in the processing space is placed; a heating section for heating the substrate; an adjustment mechanism for adjusting the height of the substrate relative to the heating plate; an exhaust section for exhausting the processing space; and a control unit, wherein the control unit controls the following to perform: (A) a step of setting the height of the substrate relative to the heating plate to a predetermined height at a predetermined distance from the heating plate and starting the heating treatment of the substrate; and (B) a step of, when the heating treatment has progressed to a predetermined degree, lowering the height of the substrate relative to the heating plate to a lower height than the predetermined height, so that the substrate is placed on or close to the heating plate, and switching the exhaust of the processing space from OFF to ON. The exhaust unit has a central exhaust unit that exhausts the processing space from a position above the aforementioned mounting surface and corresponding to a position closer to the center of the substrate on the aforementioned mounting surface, and a peripheral exhaust unit that exhausts the processing space from a position above the aforementioned mounting surface and corresponding to a position closer to the peripheral edge of the substrate on the aforementioned mounting surface, and the control unit controls the exhaust by the central exhaust unit to be kept OFF in step (A), and to switch from OFF to ON in step (B), and to keep the exhaust by the peripheral exhaust unit ON from step (A) onwards. The processing container comprises a bottom member including the heating plate and a lid member including a top wall facing the aforementioned surface, forming the processing space between itself and the bottom member, and further comprises another adjustment mechanism for adjusting the height of the lid member relative to the bottom member, and the control unit controls the following steps: (C) At the end of the heating treatment, keep the exhaust from the central exhaust unit ON, turn off the exhaust from the peripheral exhaust unit, and then, after a predetermined time has elapsed, raise the height of the lid member relative to the bottom member and open the processing space. cormorant. [Effects of the Invention]

[0006] According to this disclosure, it is possible to suppress the occurrence of defects on the substrate caused by substances generated in the processing space during heating, without impairing the uniformity of the coated film on the substrate surface after heat treatment. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic diagram illustrating the configuration of the heat treatment apparatus according to this embodiment, viewed from the side. [Figure 2] This figure shows the state of the heating apparatus at each step of the wafer processing according to this embodiment. [Figure 3] This figure shows the state of the heating apparatus at each step of the wafer processing according to this embodiment. [Figure 4] This figure shows the temperature history of wafer W during the heat treatment included in the wafer processing according to this embodiment. [Figure 5] This figure shows the exhaust configuration of the processing space in another example of wafer processing according to this embodiment. [Figure 6] This figure shows the state of the processing space during the process of completing the heat treatment in another example of wafer processing according to this embodiment. [Figure 7]This diagram illustrates the effects of another example of wafer processing according to this embodiment. [Figure 8] This diagram illustrates the effects of another example of wafer processing according to this embodiment. [Figure 9] This figure shows the height of the lid member relative to the bottom member in each step of another example of wafer processing according to this embodiment. [Figure 10] This is an explanatory diagram of the data used to determine whether the heat treatment has reached a predetermined stage. [Modes for carrying out the invention]

[0008] In the manufacturing process of semiconductor devices, various processing solutions, such as a processing solution for forming a SOC film used as a hard mask, may be applied to the surface of a substrate such as a semiconductor wafer (hereinafter referred to as "wafer"). After the application of these processing solutions, i.e., after the formation of the coated film, a heat treatment is performed in which the substrate is heated in a processing container of a heat treatment apparatus.

[0009] Furthermore, in heat treatment equipment, the inside of the treatment container is evacuated in order to recover defect-causing substances that are generated inside the treatment container during heating. Defect-causing substances are substances that cause defects when they adhere to the substrate. However, even with evacuating as described above, it may not be possible to recover all of the defect-causing substances. Increasing the amount of exhaust from the treatment container or extending the exhaust time can recover more defect-causing substances, but this may result in uneven thickness of the coating film across the substrate surface.

[0010] Therefore, the technology described herein suppresses the occurrence of defects on the substrate caused by substances generated in the processing container (specifically, in the processing space formed by the processing container) during heating, without impairing the uniformity of the coated film on the substrate surface after heat treatment.

[0011] Hereinafter, the heat treatment apparatus and the heat treatment method according to this embodiment will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

[0012] <Heat treatment apparatus> FIG. 1 is an explanatory view schematically showing the configuration of the heat treatment apparatus according to this embodiment as viewed from the side.

[0013] As shown in FIG. 1, the heat treatment apparatus 1 has a processing container 2 that forms a processing space S for accommodating a wafer W as a substrate. This processing container 2 has a bottom member 3 having a hot plate 11 and a lid member 4 that includes a ceiling portion 4a facing the placement surface 11a of the bottom member 3 described later and forms the processing space S between the bottom member 3. Further, the processing container 2 is provided in a housing (not shown).

[0014] The bottom member 3 is supported on a base 5 of the housing (not shown) via a support member 6. The bottom member 3 includes a support base 12 formed of a flat cylindrical body having a recess formed inside the peripheral edge portion 12a. A hot plate 11 is provided in the recess of the support base 12.

[0015] The upper surface 11a of the hot plate 11 is a placement surface on which the wafer W is placed. A plurality of gap pins (not shown) for supporting the lower surface of the wafer W may be provided on the upper surface 11a (hereinafter, the placement surface 11a) of the hot plate 11. Further, a heater 13 as a heating unit for heating the wafer W is provided in the hot plate 11. The heater 13 can heat the wafer W by heating the placement surface 11a. Specifically, the heater 13 can heat the wafer W placed on the placement surface 11a by heating the placement surface 11a, and can also heat the wafer W located at a position separated from the placement surface 11a. The heater 13 is controlled by a control unit 100 described later.

[0016] The ceiling portion 4a of the lid member 4 is formed in a disk shape having a diameter larger than that of the bottom member 3. Further, the lid member 4 has a side wall portion 4b that closes the periphery of the gap between the bottom member 3 and the ceiling portion 4a to form the processing space S. The side wall portion 4b is formed in an annular shape in plan view.

[0017] This lid member 4 is moved up and down by the elevating mechanism 20. The elevating mechanism 20 has a drive source such as a motor that generates a driving force for moving the lid member 4 up and down, that is, a driving force for adjusting the height of the lid member 4 with respect to the bottom member 3, and is provided, for example, on the base 5. This elevating mechanism 20 is controlled by a control unit 100 described later. The elevating mechanism 20 can form the processing space S by lowering the lid member 4. Also, the elevating mechanism 20 can open the processing space S by raising the lid member 4. Further, the elevating mechanism 20 can change the volume of the processing space S by moving the lid member 4 up and down, that is, by adjusting the height of the lid member 4 with respect to the bottom member 3. As described above, the elevating mechanism 20 constitutes an adjustment mechanism for adjusting the height of the lid member 4 with respect to the bottom member 3 and also constitutes a changing unit for changing the volume of the processing space S.

[0018] Further, a shower head 30 is provided on the ceiling portion 4a of the lid member 4. The shower head 30 supplies a gas containing oxygen, that is, an oxygen-containing gas, downward from the ceiling portion 4a. The oxygen-containing gas supplied by the shower head 30 is, for example, dry air. Also, the shower head 30 supplies an inert gas not containing oxygen downward from the ceiling portion 4a. The inert gas supplied by the shower head 30 is, for example, nitrogen gas.

[0019] The shower head 30 has a plurality of discharge holes 31 and a gas distribution space 32.

[0020] Each discharge hole 31 is formed on the lower surface of the shower head 30. The discharge holes 31 are arranged substantially uniformly, for example, in the central part of the lower surface of the shower head 30, excluding the exhaust port 41 which will be described later. The plurality of discharge holes 31 include a first discharge hole located above the peripheral edge of the wafer W on the heating plate 11, and a second discharge hole located above the central part of the wafer W on the heating plate 11.

[0021] The gas distribution space 32 distributes the oxygen-containing gas or inert gas introduced into the showerhead 30 and supplies it to each discharge port 31. The shower head 30 is connected to an introduction pipe 33 for introducing an oxygen-containing gas or an inert gas into the shower head 30.

[0022] A gas source 35 for storing oxygen-containing gas is connected to the inlet pipe 33 via a supply pipe 34. The supply pipe 34 is equipped with a group of supply equipment 36, including on-off valves and flow control valves for controlling the flow of oxygen-containing gas. Furthermore, a gas source 38 for storing inert gas is connected to the inlet pipe 33 via a supply pipe 37. The supply pipe 37 is equipped with a group of supply equipment 39, including on-off valves and flow control valves for controlling the flow of inert gas. The supply devices 36 and 39 are controlled by the control unit 100, which will be described later.

[0023] In the heating apparatus 1, a gas supply unit is configured to supply inert gas to the processing space S by shower head 30, introduction pipe 33, supply pipe 37, and supply equipment group 39, and another gas supply unit is configured to supply oxygen-containing gas to the processing space S by shower head 30, introduction pipe 33, supply pipe 34, and supply equipment group 36.

[0024] Furthermore, the heat treatment apparatus 1 is provided with a central exhaust section 40 and a peripheral exhaust section 50. These central exhaust section 40 and peripheral exhaust section 50 constitute an exhaust section that exhausts the processing space S.

[0025] The central exhaust unit 40 exhausts the processing space S from a position above the mounting surface 11a, corresponding to a position near the center of the wafer W on the mounting surface 11a (the central position in the example shown in the figure). The central exhaust unit 40 has an exhaust port 41. The exhaust port 41 is located near the center of the lower surface of the shower head 30 (the central position in the example shown in the figure) and opens downwards. The central exhaust unit 40 exhausts the processing space S through this exhaust port 41.

[0026] Furthermore, the central exhaust section 40 has a central exhaust passage 42 formed to extend upward from the exhaust port 41. An exhaust device 44, such as a vacuum pump, is connected to the central exhaust passage 42 via an exhaust pipe 43. The exhaust pipe 43 is equipped with an exhaust equipment group 45 that includes valves for adjusting the exhaust volume. The exhaust device 44 and the exhaust equipment group 45 are controlled by a control unit 100, which will be described later.

[0027] The peripheral exhaust section 50 exhausts the processing space S from a position above the mounting surface 11a, near the peripheral edge of the wafer W on the mounting surface 11a (in the example shown, slightly outside the peripheral edge of the wafer W). The peripheral exhaust section 50 has an exhaust port 51. The exhaust port 51 opens downward from the lower surface of the ceiling section 4a, surrounding the outer circumference of the shower head 30. The exhaust port 51 may consist of multiple exhaust holes arranged along the outer circumference of the shower head 30. The peripheral exhaust section 50 exhausts the processing space S through this exhaust port 51.

[0028] Furthermore, the peripheral exhaust section 50 has a peripheral exhaust passage 52 that leads to the exhaust port 51. An exhaust device 54, such as a vacuum pump, is connected to the peripheral exhaust passage 52 via an exhaust pipe 53. The exhaust pipe 53 is equipped with an exhaust device group 55 that includes valves for adjusting the exhaust volume. The exhaust device 54 and the exhaust device group 55 are controlled by a control unit 100, which will be described later.

[0029] Furthermore, the ceiling section 4a is configured to be heated. For example, the ceiling section 4a has a built-in heater (not shown) that heats the ceiling section 4a. This heater is controlled by the control unit 100 described later, and the ceiling section 4a (specifically, for example, the shower head 30) is adjusted to a predetermined temperature.

[0030] Furthermore, the heating apparatus 1 is provided with a lifting mechanism 60 for raising and lowering the wafer W below the bottom member 3. The lifting mechanism 60 has lifting pins 61 that serve as transfer members for transferring the wafer W to and from a transfer mechanism (not shown) located outside the processing container 2, and these pins are provided so as to penetrate the support base 12 and the heating plate 11. For example, at least three lifting pins 61 are provided at equal intervals in the circumferential direction of the heating plate 11.

[0031] The lifting pin 61 is raised and lowered by a lifting mechanism 62 and is configured to protrude above the heating plate 11 when raised. The lifting mechanism 62 has a drive source such as a motor that generates the driving force for raising and lowering the lifting pin 61, and is provided, for example, on the base 5. By raising and lowering the lifting pin 61, the height of the wafer W supported by the lifting pin 61 relative to the heating plate 11 can be adjusted. This lifting mechanism 62 is controlled by a control unit 100, which will be described later. In this way, the lifting mechanism 60 constitutes an adjustment mechanism for adjusting the height of the wafer W relative to the heating plate 11.

[0032] The heat treatment apparatus 1 described above includes a control unit 100. The control unit 100 is a computer equipped with, for example, a processor such as a CPU and memory, and has a storage unit 101. The storage unit 101 stores, for example, a program that controls various operations of the heat treatment apparatus 1, which will be described later. The program may have been recorded on a storage medium H that is readable by the computer and installed from the storage medium H to the control unit 100. The storage medium H may be for temporary or permanent storage. In addition, part or all of the program may be implemented on dedicated hardware (circuit board).

[0033] <Example of wafer processing 1> Next, an example of wafer processing, including heat treatment performed using the heat treatment apparatus 1, according to this embodiment will be described. Figures 2 and 3 show the state of the heating apparatus 1 at each step of the wafer processing according to this embodiment, respectively. Figure 4 shows the temperature history of the wafer W during the heating process included in the wafer processing according to this embodiment. Furthermore, all wafer processing according to the embodiment illustrated below is performed under the control of the control unit 100.

[0034] (Step S1: Wafer W is brought in) First, the wafer W is brought into the heating apparatus 1. Specifically, after the lid member 4 is raised, the wafer W on which the SOC film has been formed as a coating film is moved above the heating plate 11 by a transport mechanism (not shown). Then, the lifting pin 61 is raised, and the wafer W is handed over to the lifting pin 61 as shown in Figure 2(A), and the height of the wafer W relative to the heating plate 11 rises to the handover height Hd. The handover height Hd is, for example, 30 mm to 50 mm.

[0035] At this time, exhaust from the central exhaust unit 40 is turned OFF. Exhaust from the peripheral exhaust unit 50 is kept ON at all times during wafer processing. Furthermore, at this time, the heater 13 is controlled so that the temperature of the mounting surface 11a of the heating plate 11 is, for example, 200 to 450°C. During wafer processing, the heater 13 is controlled so that the temperature of the mounting surface 11a of the heating plate 11 remains constant. In addition, a heater (not shown) for the ceiling portion 4a is controlled so that the temperature of the ceiling portion 4a (specifically the shower head 30) remains constant at a predetermined temperature during wafer processing.

[0036] (Step S2: Start of heat treatment) Next, the height of the wafer W relative to the heating plate 11 is set to a predetermined height, i.e., a first height H1, which is a predetermined distance away from the heating plate 11, and the heating process is started. Specifically, the lid member 4 is lowered to form the processing space S as shown in Figure 2(B). Furthermore, simultaneously with or after the lid member 4 descends, the lifting pin 61 is lowered, and the height of the wafer W relative to the heating plate 11 is set to a first height H1, which is different from and lower than the transfer height Hd. Once the height of the wafer W relative to the heating plate 11 is set to the first height H1 and the processing space S is formed, the heating process begins. The first height H1 is, for example, 2 mm to 10 mm, and is set in advance and stored in the storage unit 101. Furthermore, during the heat treatment, the height of the lid member 4 relative to the bottom member 3, i.e., the volume of the processing space S, remains constant.

[0037] (Step S3: Heating at the first height H1) Next, the wafer W is heated at a first height H1, and exhaust is performed by the peripheral exhaust unit 50 to recover any defect-causing substances generated in the processing space S during heating.

[0038] Specifically, the height of the wafer W relative to the heating plate 11 is maintained at a first height H1, and oxygen-containing gas is supplied from the showerhead 30 to the processing space S. Furthermore, exhaust is performed by the peripheral exhaust section 50, and defect-causing substances in the processing space S, such as defect-causing substances generated from the SOC film during heating, are recovered.

[0039] Furthermore, the discharge of oxygen-containing gas from the showerhead 30 may be performed before the start of the heat treatment.

[0040] Step S3 is carried out until the heat treatment reaches a predetermined degree of progress. Specifically, as shown in Figure 4, step S3 is carried out until the temperature of the wafer W reaches a predetermined temperature Tt that is slightly lower than the temperature at which the crosslinking reaction with oxygen in the SOC film begins.

[0041] The determination of whether the heat treatment has progressed to a predetermined degree, that is, whether the temperature of the wafer W has reached a predetermined temperature Tt, is performed, for example, based on whether the time elapsed since the height of the wafer W relative to the heating plate 11 was set to a first height H1 has exceeded a predetermined time T1. When the control unit 100 exceeds the predetermined time T1, it determines that the predetermined degree of progress has been reached, that is, that the predetermined temperature Tt has been reached. The "predetermined time T1" used in this determination varies depending on the type of SOC film, and is set in advance based on user input via an input unit such as a keyboard or touch panel (not shown), and is stored in the storage unit 101.

[0042] (Step S4: Wafer W descends) Then, after the heat treatment has progressed to a predetermined stage, the wafer W is lowered. Specifically, after the heating process has progressed to a predetermined stage, the lifting pin 61 is lowered, and the wafer W is placed on the mounting surface 11a of the heating plate 11.

[0043] (Step S5: Heating while the device is in place) Next, the wafer W is heated while placed on the heating plate 11, and exhaust is performed by the peripheral exhaust section 50 and the central exhaust section 40 to recover any defect-causing substances generated in the processing space S during heating.

[0044] Specifically, as shown in Figure 3(A), the wafer W is maintained in a state where it is placed on the heating plate 11, and oxygen-containing gas is supplied from the shower head 30 to the processing space S. When the wafer W heated by the heating plate 11 exceeds a certain temperature, the material in the SOC film on the wafer W undergoes a crosslinking reaction with oxygen in the processing space S and heat. The SOC film hardens, i.e., becomes etch-resistant, due to the crosslinking reaction occurring within the film.

[0045] Furthermore, the exhaust equipment group 45 is controlled, and the exhaust from the central exhaust unit 40 is switched from OFF to ON, so that exhaust is performed both by the peripheral exhaust unit 50 and the central exhaust unit 40. As a result, defect-causing substances in the processing space S, such as defect-causing substances generated from the SOC film during heating, are recovered. This step S5 is performed from the time the wafer W is placed on the hot plate 11 until a predetermined time T2 has elapsed.

[0046] The predetermined time T2 (i.e., the heating time while placed on the hot plate 11) is, for example, 30 to 120 seconds, and the predetermined time T1 (i.e., the heating time at the first height H1) is 0.5 to 1.5 times the predetermined time T2.

[0047] The timing at which the exhaust from the central exhaust unit 40 is switched from OFF to ON is, specifically, for example, immediately after the start of heating in step S5 (i.e., immediately after the wafer W is placed on the heating plate 11). Alternatively, the above timing may be after a predetermined time T3 has elapsed since the start of heating in step S5 (i.e., since the wafer W has been placed on the heating plate 11). The reason for this will be explained later. The predetermined time T3 is, for example, 2 seconds or more and 10 seconds or less.

[0048] (Step S6: End of heat treatment) When step S5 is completed, the lifting pin 61 rises, separating the wafer W from the mounting surface 11a, and the lid member 4 rises, opening the processing space S, thus ending the heating process. Specifically, after the completion of step S5, for example, the supply of oxygen-containing gas from the showerhead 30 to the processing space S, the exhaust by the central exhaust unit 40, and the exhaust by the peripheral exhaust unit 50 are kept ON, while the lifting pin 61 and the lid member 4 are raised simultaneously. As a result, as shown in Figure 3(B), the wafer W is raised to the transfer height Hd and the processing space S is opened.

[0049] (Step S7: Removal of wafer W) Subsequently, the wafer W is removed from the heating apparatus 1. Specifically, the lifting pin 61 is lowered, the wafer W is handed over to a transport mechanism (not shown), and the wafer W is moved from above the heating plate 11 by the transport mechanism. This completes the wafer processing for this example.

[0050] As wafer processing methods different from this example, the wafer processing described in Comparative Examples 1 and 2 below can be considered.

[0051] (Comparative Example 1) The wafer W is not heated at the first height H1, and only the wafer W is heated while it is placed on the heating plate 11. During heating, both the exhaust from the central exhaust section 40 and the exhaust from the peripheral exhaust section 50 are turned ON from the beginning.

[0052] (Comparative Example 2) The wafer W is not heated at the first height H1, and only the wafer W is heated while it is placed on the heating plate 11. During heating, for the first 10 to 20 seconds or so, the exhaust from the central exhaust section 40 is turned OFF, and only the exhaust from the peripheral exhaust section 50 is turned ON. After that, for about 50 seconds, both the exhaust from the central exhaust section 40 and the exhaust from the peripheral exhaust section 50 are turned ON.

[0053] However, after conducting numerous experiments, the inventors found that Comparative Examples 1 and 2 had the following problems. Specifically, in the wafer processing method of Comparative Example 1, no defects occurred on the surface of the wafer W after processing, but the thickness of the SOC film after processing was sometimes thicker in the center of the wafer W. Also, in the wafer processing method of Comparative Example 2, depending on the type of SOC film, it was not possible to sufficiently recover the defect-causing substances in the processing space S, and defects may occur on the surface of the wafer W after processing. In some cases, even if the exhaust time was extended, it was not possible to sufficiently reduce the above defects. This is likely because, in the case of the relevant type of SOC film, if the wafer W is not heated at the first height H1, and exhaust is not performed by the central exhaust unit 40 during the period of rapid temperature change of the wafer W, immediately after the start of the heating process and immediately after it is placed on the hot plate 11, then defect-causing substances will be generated that cannot be recovered even if exhaust is performed by the central exhaust unit 40 afterward.

[0054] In contrast, in the wafer processing described in this example, the wafer W is heated to a first height H1 and then placed on the hot plate 11. Therefore, the temperature change of the wafer W immediately after the start of the heating process and the temperature change of the wafer W immediately after being placed on the hot plate 11 are relatively gradual. Consequently, the wafer processing described in this example can suppress the generation of defect-causing substances P that are difficult to recover, which may occur during periods of rapid temperature changes in the wafer W. Furthermore, in the heat treatment of a wafer W on which an SOC film has been formed, the fluidity of the SOC film is highest in the initial stage, and the effect of exhaust is easily reflected in the film thickness. In contrast, in the wafer processing according to this example, in the process of heating the wafer W at a first height H1, which is the initial stage of the heat treatment, the exhaust from the central exhaust unit 40 is in the OFF state. Therefore, by performing central exhaust during the heat treatment, it is possible to suppress the increase in the thickness of the SOC film in the central part of the wafer W.

[0055] In the wafer processing example according to this embodiment described above, the height of the wafer W relative to the heating plate 11 during heating in step S5 is the height at which the wafer is placed on the heating plate 11, but it is not limited to this; any height that is closer to the heating plate 11 than the first height H1 is acceptable. The same applies to the following example.

[0056] <Main effects of this embodiment> As described above, the wafer processing example according to this embodiment includes the steps of (a) setting the height of the wafer W relative to the heating plate 11 to a first height H1, which is a predetermined distance from the heating plate 11, and starting the heating process of the wafer W, and when the heating process has progressed to a predetermined degree, lowering the height of the wafer W relative to the heating plate 11 to a lower height H1, so that the wafer W is placed on or close to the heating plate 11, and switching the exhaust in the processing space S from OFF to ON. As a result, the temperature change of the wafer W is relatively gradual throughout the entire heating process. Therefore, it is possible to suppress the generation of defect-causing substances P that are difficult to recover, which may occur during periods when the temperature change of the wafer W is drastic. Furthermore, in the wafer processing example according to this embodiment, the exhaust of the processing space S (specifically, exhaust by the central exhaust unit 40) to improve the efficiency of recovering defect-causing substances in the processing space S is turned ON after the heating process has progressed to a predetermined degree, that is, after the fluidity of the coating film on the wafer W has decreased. Therefore, exhaust from the processing space S (specifically, exhaust by the central exhaust unit 40) can suppress the occurrence of in-plane non-uniformity of the film thickness.

[0057] Therefore, according to this embodiment, it is possible to suppress the occurrence of defects on the wafer W caused by substances generated in the processing space S during heating, without impairing the uniformity of the coated film on the wafer W surface after heat treatment.

[0058] As mentioned above, the timing at which the exhaust from the central exhaust unit 40 is switched from OFF to ON may be after a predetermined time T3 has elapsed since the hot plate 11 was placed on it. This is because, depending on the type of coating film and the heating time at the first height H1, heating at the first height H1 alone may not be sufficient to reduce the fluidity of the coating film to a degree that is unaffected by the exhaust from the central exhaust unit 40.

[0059] (Example 2 of wafer processing) Figure 5 shows the exhaust configuration of the processing space S in another example of wafer processing according to this embodiment. In the above example, in the step S6 process to complete the heat treatment, the lid member 4 was raised while the exhaust from the central exhaust section 40 and the exhaust from the peripheral exhaust section 50 remained ON, and the processing space S was opened. Alternatively, in the step S6 process to complete the heat treatment, as shown in Figure 5, the exhaust from the central exhaust section 40 may be kept ON, the exhaust from the peripheral exhaust section 50 may be turned OFF, and then, after a predetermined time T2 has elapsed, the lid member 4 may be raised, opening the processing space S. This makes it possible to suppress the leakage of defect-causing substances from the gap between the bottom member 3 and the lid member 4 to the outside of the processing container 2 when the processing space S is opened.

[0060] (Example 3 of wafer processing) Figure 6 shows the state of the processing space S at the end of the heating process in step S6 in another example of wafer processing according to this embodiment. In the wafer processing example 1 described above, in the step S6 process to complete the heating process, the lifting pin 61 is raised, i.e., the wafer W is raised and the lid member 4 is raised simultaneously, while the central exhaust unit 40 and the peripheral exhaust unit 50 remain ON. The wafer W is raised and the processing space S is opened. Alternatively, in the step S6 process to complete the heating process, first, as shown in Figure 6, only the lifting pin 61 is raised while the central exhaust unit 40 and the peripheral exhaust unit 50 remain ON. The height of the wafer W relative to the heating plate 11 is set to the second height H2, and the processing space S remains formed. Then, after a predetermined time T3 has elapsed, the lifting pin 61 is raised again and the lid member 4 is raised simultaneously, the wafer W is raised to the transfer height Hd, and the processing space S is opened. Note that the first height H1 and the second height H2 may be the same or different.

[0061] The second height H2 is set in advance, similar to the first height H1, and stored in the memory unit 101. Furthermore, the second height H2 may be calculated and determined in advance by the control unit 100 and stored in the storage unit 101, as follows. That is, the control unit 100 may obtain the detection result of the amount of warpage of the wafer W to be processed from an external detection device (not shown), and based on the above detection result, the second height H2 may be calculated and determined in advance and stored in the storage unit 101. The above external detection device is, for example, a known device that images the wafer W from the side and detects the amount of warpage of the wafer W from the imaging result.

[0062] For example, the control unit 100 calculates and determines the second height H2 from the detected amount of warpage of the wafer W to be processed, as follows. In other words, the control unit 100 calculates the sum of the acquired wafer W curvature Wp and the default value H20 of the second height H2 stored in the storage unit 101, and the result is determined to be the actual second height H2 (=Wp+H20). As a result, the height H3 of the peripheral edge of the wafer W relative to the lower end of the peripheral edge of the lid member 4 becomes constant regardless of the amount of wafer W curvature. If the height H3 of the peripheral edge of the wafer W relative to the lower end of the peripheral edge of the lid member 4 is different, the airflow that flows under the peripheral edge of the lid member 4 and onto the surface of the wafer W will also be different when the lifting pin 61 and the lid member 4 rise simultaneously and the processing space S is opened. Specifically, when the lifting pin 61 and the lid member 4 rise simultaneously and the processing space S is opened, if the height H3 is large, the airflow that flows onto the surface of the wafer W will be small, and if the height H3 is small, the airflow that flows onto the surface of the wafer W will be large. Therefore, by keeping the height H3 of the peripheral edge of the wafer W relative to the lower end of the peripheral edge of the lid member 4 constant regardless of the amount of warping of the wafer W, the airflow that flows onto the surface of the wafer W when the processing space S is opened will also be approximately constant. As a result, the influence of the amount of warping of the wafer W on the heat treatment results can be suppressed.

[0063] Furthermore, in this example, the exhaust configuration of the processing space S in the step S6 process for completing the heat treatment may be the same as in Example 6 of the wafer processing described above. That is, in the step S6 process for completing the heat treatment, of the exhaust by the central exhaust section 40 and the exhaust by the peripheral exhaust section 50, the exhaust by the peripheral exhaust section 50 may be turned OFF before the lid member 4 is raised, and then after a predetermined time T3 has elapsed, the lid member 4 may be raised and the processing space S may be opened.

[0064] Furthermore, when performing wafer processing examples 1 to 3 described above, the supply pipe 37, gas source 38, and supply equipment group 39 used for supplying inert gas to the processing space S can be omitted from the heating apparatus 1.

[0065] <Example 4 of wafer processing> Figures 7 and 8 are diagrams illustrating the effects of other examples of wafer processing according to this embodiment. In the above example, the gas supplied to the processing space S during the heat treatment was an oxygen-containing gas, and no switch to an inert gas was performed. In contrast, in this example, during the heat treatment, the gas supplied to the processing space S is switched from an oxygen-containing gas to an inert gas, and the oxygen-containing gas in the processing space S is replaced with the inert gas. In other words, in this example, the heating process is switched midway from heating in an oxygen-containing gas atmosphere to heating in a low-oxygen concentration atmosphere (specifically, heating in an inert gas atmosphere).

[0066] The timing at which the gas supplied to the processing space S is switched from an oxygen-containing gas to an inert gas is, for example, during the heating of the wafer W while it is placed on the hot plate 11 in step S5. Specifically, the above timing is, for example, during heating in step S5, when the crosslinking reaction by reaction with oxygen in the SOC film on the wafer W has progressed to a predetermined degree, or more specifically, when the temperature Ts reaches a predetermined temperature above the temperature at which the crosslinking reaction in the SOC film is completed.

[0067] The determination of whether the crosslinking reaction with oxygen in the SOC film has progressed to a predetermined degree, that is, whether the temperature of the wafer W has reached a predetermined temperature Ts, is performed, for example, based on whether the time elapsed since the wafer W was placed on the hot plate 11 has exceeded a predetermined time T11. The control unit 100 determines that the predetermined degree of progress has been reached, that is, that the predetermined temperature Ts has been reached, when the predetermined time T11 has been exceeded. The "predetermined time T11" used in this determination varies depending on the type of SOC film and is set in advance based on user input via an input unit such as a keyboard or touch panel (not shown), and is stored in the storage unit 101.

[0068] In this example, when heating is performed in an inert gas atmosphere in the later stages of the heat treatment, the supply of inert gas from the showerhead 30 to the treatment space S is stopped before the lid member 4 is raised, that is, before the treatment space S is opened, when the heat treatment is finished.

[0069] During the period immediately following the placement of the wafer W onto the heating plate 11, rapid temperature changes may cause relatively large defect-causing substances P1 to scatter from the SOC film, as shown in Figure 7(A). This scattering of defect-causing substances P1 subsides as the heating process progresses. However, unlike this example, if the inert gas is not switched to, as the heating process progresses, the aforementioned defect-causing substances P1 may combine with fine particles P2 from the vaporized material of the SOC film on the wafer W and oxygen in the processing space S, as shown in Figure 7(B), to form another defect-causing substance P3 with a larger mass. This defect-causing substance P3 is not only large in mass but also generated in large quantities. Therefore, exhaust by the central exhaust section 40 and the peripheral exhaust section 50 may not be able to recover all of the defect-causing substances P3, and as shown in Figure 7(C), the defect-causing substances P3 may fill the processing space S at the end of the heating process and remain attached to the entire surface of the wafer W after the wafer processing is complete.

[0070] In contrast, in the wafer processing described in this example, after the crosslinking reaction by oxygen in the SOC film has progressed to a predetermined degree (specifically, after the crosslinking reaction is completed), the gas supplied to the processing space S is switched from an oxygen-containing gas to an inert gas. Therefore, even if the aforementioned relatively large defect-causing material P1 is scattered during the period including immediately after the wafer W is placed on the hot plate 11, this defect-causing material P1 does not combine with the aforementioned fine particles P2 and oxygen in the processing space S, as shown in Figure 8(A), and therefore does not change into another defect-causing material P3 (see Figure 7(B)) which has a larger mass. Instead, a portion of the defect-causing material P1 volatilizes due to heat and shrinks (in Figure 8(A), P4 is the shrunk defect-causing material). The shrunk defect-causing material P4 can be easily recovered by exhaust from the central exhaust section 40 and the peripheral exhaust section 50, as shown in Figure 8(B). Therefore, it is possible to suppress the accumulation of the above-mentioned defect-causing substance P3 (see Figure 2(B)) and other defect-causing substances in the processing space S at the end of the heat treatment, and to suppress the retention of defect-causing substances on the entire surface of the wafer W after the wafer processing is complete.

[0071] If the timing at which the gas supplied to the processing space S is switched from an oxygen-containing gas to an inert gas is the timing described above, the exhaust from the central exhaust unit 40 may be switched from OFF to ON at the same time as the switch.

[0072] Furthermore, the timing at which the gas supplied to the processing space S is switched from an oxygen-containing gas to an inert gas, that is, the timing of the replacement of the processing space S with an inert gas, may be when the heating in step S5 is started, that is, when the wafer W in step S4 is lowered so as to be placed on the hot plate 11.

[0073] <Wafer Processing Example 5> Figure 9 shows the height of the lid member 4 relative to the bottom member 3 in each step of another example of wafer processing according to this embodiment. In the above example, the height of the lid member 4 relative to the bottom member 3, i.e., the volume of the processing space S, remained constant during the heat treatment. Alternatively, in the step of replacing the oxygen-containing gas in the processing space S with an inert gas (hereinafter referred to as the replacement step), the volume of the processing space S may be reduced compared to the heating step in the atmosphere of oxygen-containing gas. In this case, the volume of the processing space S may be increased in the heating step in the atmosphere of inert gas compared to the replacement step.

[0074] Specifically, as shown in Figure 9(A), the heating process may be performed in an oxygen-containing gas atmosphere with the lid member 4 at a first height H11 relative to the bottom member 3, and the replacement process may be performed with the lid member 4 at a second height H12, which is lower than the first height H12, as shown in Figure 9(B). Alternatively, in this case, the heating process may be performed in an inert gas atmosphere with the lid member 4 at a third height H13, which is higher than the second height H12. The third height H13 may be the same as or different from the first height H11.

[0075] As shown in this example, by reducing the volume of the processing space S during the substitution process, the time required to replace the atmosphere in the processing space S with an inert gas can be shortened. As a result, the generation of the aforementioned large-mass defect-causing substance P3 can be suppressed.

[0076] Furthermore, in the heating process in an inert gas atmosphere, increasing the volume of the processing space S as described above, that is, increasing the height of the lid member 4 relative to the bottom member 3, makes the airflow directly above the wafer W more uniform across the wafer surface. In addition, it is possible to suppress the adhesion and contamination of the lid member 4 (specifically the shower head 30) by defect-causing substances.

[0077] In the heating process in an inert gas atmosphere, if the volume of the processing space S is larger than in the displacement process as described above, the flow rate of the inert gas supplied to the processing space S may be increased in the displacement process and relatively decreased in the heating process in an inert gas atmosphere. This makes it possible to reduce the amount of inert gas consumed throughout the entire heating process while shortening the time required to replace the atmosphere in the processing space S with inert gas in the displacement process.

[0078] (modified version) In the wafer processing example 1 described above, the determination of whether the heating process had progressed to a predetermined degree, that is, whether the temperature of the wafer W had reached a predetermined temperature Tt, was performed based on a predetermined time T1 that was set in advance based on user input via an input unit such as a keyboard or touch panel (not shown).

[0079] The method for determining whether the heat treatment has progressed to a predetermined degree, that is, the method for determining whether the temperature of the wafer W has reached a predetermined temperature Tt, is not limited to this. For example, data D1 showing a relationship R as shown in Figure 10 is stored in the storage unit 101 in advance. The relationship R is the relationship between the temperature of the wafer W and the heating time when the wafer W is heated with the heating plate 11 set to the current set temperature and the height of the wafer W relative to the heating plate 11 set to a preset first height H1. In addition, the predetermined temperature (i.e., the target temperature reached by heating at the first height H1) Tt is received from the user via an input unit such as a keyboard or touch panel (not shown) and stored in the storage unit 101 in advance. Then, a determination of whether or not the temperature of the wafer W has reached the predetermined temperature Tt may be made based on the data D1 stored in the storage unit 101. Specifically, the control unit 100 may calculate and determine the time T21 required to reach the predetermined temperature Tt based on the data D1 stored in the storage unit 101 and the predetermined temperature Tt, and then determine whether the temperature of the wafer W has reached the predetermined temperature Tt based on whether the time elapsed since the height of the wafer W relative to the heating plate 11 was set to the first height H1 has exceeded the time T21.

[0080] The time T21 required to reach the predetermined temperature Tt, which is determined as information used to determine whether or not the temperature of the wafer W has reached a predetermined temperature Tt, may be output externally via an external output unit such as a display unit (e.g., a liquid crystal display) not shown.

[0081] Furthermore, data D2, which shows the relationship R between the temperature of the wafer W and the heating time when the wafer W is heated with the height of the wafer W relative to the heating plate 11 set to a first height H1, for each temperature of the heating plate 11 and for each height of the wafer W relative to the heating plate 11, may be stored in the storage unit 101 in advance. Then, the determination of whether or not the temperature of the wafer W has reached a predetermined temperature Tt may be performed based on the data D2 stored in the storage unit 101.

[0082] For example, the current temperature of the heating plate 11, the predetermined temperature Tt, and the setting value of the first height H1 are received from the user via an input unit such as a keyboard or touch panel (not shown) and stored in the storage unit 101 in advance. The control unit 100 then calculates and determines the time T21 required to reach the predetermined temperature Tt based on this information and the data D2. The control unit 100 then determines whether the temperature of the wafer W has reached the predetermined temperature Tt based on whether the time elapsed since the height of the wafer W relative to the heating plate 11 was set to the first height H1 has exceeded the time T21.

[0083] Furthermore, when the wafer W is heated with a height of first height H1 relative to the heating plate 11, the relationship R between the temperature of the wafer W and the heating time is affected not only by the set temperature of the heating plate 11 and the height of the wafer W relative to the heating plate 11, but also by the set temperature of the lid member 4 (specifically, the shower head 30). Therefore, data D3 showing the above relationship R for each temperature of the heating plate 11, each height of the wafer W relative to the heating plate 11, and each temperature of the lid member 4 may be stored in the storage unit 101 in advance. Then, the determination of whether or not the temperature of the wafer W has reached a predetermined temperature Tt may be performed based on the above data D3 stored in the storage unit 101.

[0084] For example, the temperature of the lid member 4, the temperature of the heating plate 11, the predetermined temperature Tt, and the setting value of the first height H1 are received from the user via an input unit such as a keyboard or touch panel (not shown) and stored in the storage unit 101 in advance. The control unit 100 then calculates and determines the time T21 required to reach the predetermined temperature Tt based on this information and the data D2. The control unit 100 then determines whether the temperature of the wafer W has reached the predetermined temperature Tt based on whether the time elapsed since the height of the wafer W relative to the heating plate 11 was set to the first height H1 has exceeded the time T21.

[0085] Similar to the example using data D1, in the example using data D2 or data D3, the time T21 required to reach the predetermined temperature Tt, which is determined as information used to determine whether or not the temperature of the wafer W has reached the predetermined temperature Tt, may be output externally via an external output unit such as a display unit (e.g., a liquid crystal display) not shown.

[0086] Furthermore, based on the above data D2, candidate information to be used to determine whether or not the temperature of the wafer W has reached a predetermined temperature Tt may be determined. For example, the temperature of the heating plate 11, the set value of the predetermined temperature Tt, and the allowable range of the time T21 required to reach the predetermined temperature Tt are received from the user via an input unit such as a keyboard or touch panel (not shown) and stored in the storage unit 101 in advance. The control unit 100 then determines candidate combinations of the time T21 and the first height H1 based on this information and the data D2. The determined candidates may be output externally via an external output unit such as a display unit (e.g., a liquid crystal display) (not shown).

[0087] Similarly, based on the data D3 described above, candidate information to be used to determine whether or not the temperature of the wafer W has reached a predetermined temperature Tt may be determined. For example, the temperature of the lid member 4, the temperature of the heating plate 11, the set value of the predetermined temperature Tt, and the allowable range of the time T21 required to reach the predetermined temperature Tt are received from the user via an input unit such as a keyboard or touch panel (not shown) and stored in the storage unit 101 in advance. The control unit 100 then determines candidate combinations of the time T21 and the first height H1 based on this information and the data D3. The determined candidates may be output externally via an external output unit such as a display unit (e.g., a liquid crystal display) (not shown).

[0088] Furthermore, the candidate combinations of time T21 and height H1 determined based on the above data D2 or data D3 may be narrowed down based on the detection result of the amount of warpage of the wafer W to be processed, as follows. In other words, if the shape of the wafer W is convex in side view (a shape in which the central part protrudes upward) and the amount of warping of the wafer W is large, the distance to the heating plate 11 at the peripheral edge of the wafer W becomes shorter, resulting in a larger amount of heating, which may impair the in-plane uniformity of the film thickness. For this reason, for example, if the wafer W follows a convex shape in side view and its amount of warping is 500 μm or more, the control unit 100 may narrow down the candidate combinations of time T21 and first height H1 to only those in which the first height H1 is 3 mm or more. The detection result for the amount of warpage of the wafer W to be processed is obtained, for example, from an external detection device (not shown). In addition, information other than the amount of warpage of the wafer W, which is necessary for narrowing down the above combination candidates, is stored in advance in, for example, the storage unit 101.

[0089] Furthermore, the first height H1 may be adjusted based on the detection result of the amount of warpage of the wafer W to be processed, as follows: A base value for the first height H1 may be set, and for example, if the wafer W is convex in side view and its amount of warpage is 500 μm or more, a value greater than the base value for the first height H1 may be applied, and in other cases, the base value may be applied to the first height H1.

[0090] In the above method, the height of the lid member 4 relative to the bottom member 3 was adjusted by raising or lowering the lid member 4, but it may also be adjusted by raising or lowering the lid member 4. Furthermore, while the height of the wafer W relative to the heating plate 11 was adjusted by raising or lowering the wafer W, it may also be adjusted by raising or lowering the heating plate 11.

[0091] Although SOC film was given as an example of a coated film above, the technology described herein can also be used for other coated films.

[0092] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope of the appended claims, the subsequent appendices, or their spirit. For example, the constituent elements of the embodiments described above can be combined in any way that does not impair the effects described above. In addition, the technology relating to this disclosure may produce other effects that will be apparent to those skilled in the art from the description herein, along with or in lieu of the effects described above.

[0093] Furthermore, the following configurations also fall within the technical scope of this disclosure. [Additional note 1] A heating apparatus for heating a substrate on which a coated film has been formed, A processing container that forms a processing space for housing the substrate, A heating plate having a mounting surface on which the substrate housed in the processing space is placed, and a heating section for heating the substrate, An adjustment mechanism for adjusting the height of the substrate relative to the heating plate, An exhaust unit for exhausting the aforementioned processing space, It comprises a control unit and, The control unit, (A) A step of setting the height of the substrate relative to the heating plate to a predetermined height such that it is a predetermined distance away from the heating plate and starting the heating process of the substrate, (B) A heat treatment apparatus that controls the process of, when the heat treatment has progressed to a predetermined degree, lowering the height of the substrate relative to the heating plate to a predetermined height, so that the substrate is placed on or close to the heating plate, and switching the exhaust of the processing space from OFF to ON. [Additional note 2] The aforementioned exhaust section is A central exhaust section for exhausting the processing space is located above the aforementioned mounting surface, at a position corresponding to a position closer to the center of the substrate on the aforementioned mounting surface, It has a peripheral exhaust section that exhausts the processing space from a position above the mounting surface, corresponding to a position near the peripheral edge of the substrate on the mounting surface described above, The control unit, The exhaust from the central exhaust unit is kept OFF in step (A), and switched ON in step (B). The heating apparatus according to Appendix 1, which controls the exhaust from the peripheral exhaust section to remain ON from step (A) above. [Additional note 3] The aforementioned processing container is The bottom member including the aforementioned heating plate, It includes a top wall facing the mounting surface and a lid member that forms the processing space with the bottom member, The system further includes another adjustment mechanism for adjusting the height of the lid member relative to the bottom member, The control unit, (C) The heat treatment apparatus according to Appendix 2, wherein, at the end of the heat treatment, the exhaust from the central exhaust section is kept ON, the exhaust from the peripheral exhaust section is turned OFF, and then, after a predetermined time has elapsed, the height of the lid member relative to the bottom member is increased to open the processing space. [Additional note 4] The control unit, based on data showing the relationship between the substrate temperature and heating time when the height of the substrate relative to the heating plate is the predetermined height at the current set temperature of the heating plate, , determine whether the heat treatment has reached the predetermined degree of progress, or determine the information to be used in the determination. A heat treatment apparatus as described in any one of the appendices 1 to 3. [Additional note 5] The heating apparatus according to any one of claims 1 to 3, wherein the control unit performs at least one of the following based on data showing the relationship between substrate temperature and heating time for each temperature of the heating plate and for each height of the substrate relative to the heating plate: determining a predetermined height, determining whether the heating process has reached a predetermined degree of progress, determining information to be used for the determination, or determining candidates for the information. [Additional note 6] The heating apparatus according to Appendix 4, further comprising a storage unit for storing the aforementioned data. [Additional note 7] The heating apparatus according to Appendix 5, further comprising a storage unit for storing the aforementioned data. [Additional note 8] The system further includes a gas supply unit that supplies an inert gas to the processing space, The control unit, A heat treatment apparatus according to any one of the appendices 1 to 7, which controls the replacement of the oxygen-containing gas in the treatment space with an inert gas during the heat treatment. [Additional note 9] The heat treatment apparatus according to Appendix 8, wherein the control unit controls the replacement of the oxygen-containing gas in the processing space with an inert gas during step (B). [Additional Note 10] A heat treatment method for heating a substrate on which a coated film has been formed, (a) A step of starting the heating process of the substrate, which is housed in the processing space, by setting the height of the substrate relative to the heating plate having a mounting surface on which the substrate is placed to a predetermined height such that it is a predetermined distance from the heating plate, (b) A heat treatment method comprising the steps of: when the heat treatment has progressed to a predetermined degree, lowering the height of the substrate relative to the heating plate to a predetermined height, so that the substrate is placed on or close to the heating plate, and switching the exhaust of the processing space from OFF to ON. [Additional Note 11] A readable computer storage medium containing a program that operates on a computer of a control unit that controls a heat treatment apparatus, which causes the heat treatment apparatus to perform a heat treatment method for heating a substrate on which a coated film has been formed, The aforementioned heat treatment method is (a) A step of setting the height of the substrate relative to a heating plate having a mounting surface on which the substrate housed in the processing space is placed to a predetermined height such that it is a predetermined distance from the heating plate, and starting the heating process of the substrate, (b) A heat treatment method comprising the steps of: when the heat treatment has progressed to a predetermined degree, lowering the height of the substrate relative to the heating plate to a predetermined height, so that the substrate is placed on or close to the heating plate, and switching the exhaust of the processing space from OFF to ON. [Explanation of symbols]

[0094] 1 Heat treatment apparatus 2 Processing container 11 Hot plate 11a Mounting surface 13 Heater 20 Lifting mechanism 40 Central exhaust section 50 Peripheral exhaust section 60 Lifting mechanism 100 Control Unit S processing space W wafer

Claims

1. A heating apparatus for heating a substrate on which a coated film has been formed, A processing container that forms a processing space for housing the substrate, A heating plate having a mounting surface on which the substrate housed in the processing space is placed, and a heating section for heating the substrate, An adjustment mechanism for adjusting the height of the substrate relative to the heating plate, An exhaust unit for exhausting the aforementioned processing space, It comprises a control unit and, The control unit, (A) A step of setting the height of the substrate relative to the heating plate to a predetermined height such that it is a predetermined distance away from the heating plate and starting the heating process of the substrate, (B) When the heating process reaches a predetermined stage, the control is performed to lower the height of the substrate relative to the heating plate to a lower height than the predetermined height, so that the substrate is placed on or close to the heating plate, and to switch the exhaust of the processing space from OFF to ON. The aforementioned exhaust section is A central exhaust section for exhausting the processing space is located above the aforementioned mounting surface, at a position corresponding to a position closer to the center of the substrate on the aforementioned mounting surface, It has a peripheral exhaust section that exhausts the processing space from a position above the mounting surface, corresponding to a position near the peripheral edge of the substrate on the mounting surface described above, The control unit, The exhaust from the central exhaust unit is kept OFF in step (A), and switched ON in step (B). The exhaust from the peripheral exhaust section is controlled to remain ON from step (A) onwards. The aforementioned processing container is The bottom member including the aforementioned heating plate, It includes a top wall facing the mounting surface and a lid member that forms the processing space with the bottom member, The system further includes another adjustment mechanism for adjusting the height of the lid member relative to the bottom member, The control unit, (C) A heat treatment apparatus that, upon completion of the heat treatment, controls the apparatus to further perform the step of keeping the exhaust from the central exhaust section ON, turning off the exhaust from the peripheral exhaust section, and then, after a predetermined time has elapsed, raising the height of the lid member relative to the bottom member to open the processing space.

2. The heating apparatus according to claim 1, wherein the control unit determines whether the heating process has reached a predetermined stage, or determines the information to be used for such determination, based on data showing the relationship between the substrate temperature and heating time when the height of the substrate relative to the heating plate is a predetermined height at the current set temperature of the heating plate.

3. The heating apparatus according to claim 1, wherein the control unit performs at least one of the following based on data showing the relationship between substrate temperature and heating time for each temperature of the heating plate and for each height of the substrate relative to the heating plate: determining a predetermined height, determining whether the heating process has reached a predetermined degree of progress, determining information to be used for the determination, or determining candidates for the information.

4. The heating apparatus according to claim 2, further comprising a storage unit for storing the aforementioned data.

5. The heating apparatus according to claim 3, further comprising a storage unit for storing the aforementioned data.

6. The system further includes a gas supply unit that supplies an inert gas to the processing space, The control unit, A heat treatment apparatus according to any one of claims 1 to 5, wherein control is performed to replace the oxygen-containing gas in the treatment space with an inert gas during the heat treatment.

7. The heating apparatus according to claim 6, wherein the control unit controls the replacement of the oxygen-containing gas in the processing space with an inert gas during step (B).

8. A heating apparatus for heating a substrate on which a coating film has been formed, A processing container that forms a processing space for housing the substrate, A heating plate having a mounting surface on which the substrate housed in the processing space is placed, and a heating section for heating the substrate, An adjustment mechanism for adjusting the height of the substrate relative to the heating plate, An exhaust unit for exhausting the aforementioned processing space, It comprises a control unit and, The control unit, (A) A step of setting the height of the substrate relative to the heating plate to a predetermined height such that it is a predetermined distance away from the heating plate and starting the heating process of the substrate, (B) When the heating process reaches a predetermined stage, the control is performed to lower the height of the substrate relative to the heating plate to a lower height than the predetermined height, so that the substrate is placed on or close to the heating plate, and to switch the exhaust of the processing space from OFF to ON. A heating apparatus that determines whether the heating process has reached a predetermined stage, or determines the information to be used for such determination, based on data showing the relationship between the substrate temperature and heating time when the height of the substrate relative to the heating plate is a predetermined height at the current set temperature of the heating plate.

9. The heating apparatus according to claim 8, further comprising a storage unit for storing the data.

10. Further comprising a gas supply unit for supplying an inert gas to the processing space, The control unit, The heat treatment apparatus according to claim 8 or 9, wherein control is performed to replace the oxygen-containing gas in the treatment space with an inert gas during the heat treatment.

11. The heating apparatus according to claim 10, wherein the control unit controls the replacement of the oxygen-containing gas in the processing space with an inert gas during step (B).

12. A heating apparatus for heating a substrate on which a coated film has been formed, A processing container that forms a processing space for housing the substrate, A heating plate having a mounting surface on which the substrate housed in the processing space is placed, and a heating section for heating the substrate, An adjustment mechanism for adjusting the height of the substrate relative to the heating plate, An exhaust unit for exhausting the aforementioned processing space, It comprises a control unit and, The control unit, (A) A step of setting the height of the substrate relative to the heating plate to a predetermined height such that it is a predetermined distance away from the heating plate and starting the heating process of the substrate, (B) When the heating process reaches a predetermined stage, the control is performed to lower the height of the substrate relative to the heating plate to a lower height than the predetermined height, so that the substrate is placed on or close to the heating plate, and to switch the exhaust of the processing space from OFF to ON. A heating apparatus that performs at least one of the following based on data showing the relationship between substrate temperature and heating time for each temperature of the heating plate and for each height of the substrate relative to the heating plate: determining a predetermined height, determining whether the heating process has reached a predetermined degree of progress, determining the information to be used for the determination, or determining candidates for the information.

13. The heating apparatus according to claim 12, further comprising a storage unit for storing the data.

14. The gas supply unit further comprises a gas supply unit that supplies an inert gas to the processing space, The control unit, The heat treatment apparatus according to claim 13, wherein control is performed to replace the oxygen-containing gas in the processing space with an inert gas during the heat treatment.

15. The heating apparatus according to claim 10, wherein the control unit controls the replacement of the oxygen-containing gas in the processing space with an inert gas during step (B).

16. A heating apparatus for heating a substrate on which a coated film has been formed, A processing container that forms a processing space for housing the substrate, A heating plate having a mounting surface on which the substrate housed in the processing space is placed, and a heating section for heating the substrate, An adjustment mechanism for adjusting the height of the substrate relative to the heating plate, An exhaust unit for exhausting the aforementioned processing space, It comprises a control unit and, The control unit, (A) A step of setting the height of the substrate relative to the heating plate to a predetermined height such that it is a predetermined distance away from the heating plate and starting the heating process of the substrate, (B) When the heating process reaches a predetermined stage, the control is performed to lower the height of the substrate relative to the heating plate to a lower height than the predetermined height, so that the substrate is placed on or close to the heating plate, and to switch the exhaust of the processing space from OFF to ON. The system further includes a gas supply unit that supplies an inert gas to the processing space, The control unit, A heat treatment apparatus that controls the replacement of the oxygen-containing gas in the treatment space with an inert gas during the heat treatment process.

17. The heating apparatus according to claim 15, wherein the control unit controls the replacement of the oxygen-containing gas in the processing space with an inert gas during step (B).

18. A heat treatment method for heating a substrate on which a coated film has been formed, (a) A step of setting the height of the substrate relative to a heating plate having a mounting surface on which the substrate housed in the processing space is placed to a predetermined height such that it is a predetermined distance from the heating plate, and starting the heating process of the substrate, (b) When the heating treatment has progressed to a predetermined degree, the step of lowering the height of the substrate relative to the heating plate to a predetermined height, so that the substrate is placed on or close to the heating plate, and switching the exhaust of the processing space from OFF to ON, In step (a), the exhaust from the processing space by a central exhaust unit, which exhausts the processing space from a position above the mounting surface and corresponding to a position closer to the center of the substrate on the mounting surface, is kept OFF, and in step (b), it is switched from OFF to ON. The exhaust from the processing space by the peripheral exhaust unit, which exhausts the processing space from a position above the mounting surface and corresponding to a position near the peripheral edge of the substrate on the mounting surface, is kept ON from step (a), The processing container that forms the processing space is The bottom member including the aforementioned heating plate, It includes a top wall facing the mounting surface and a lid member that forms the processing space with the bottom member, (c) A heat treatment method further comprising the steps of, at the end of the heat treatment, keeping the exhaust from the central exhaust section ON, turning off the exhaust from the peripheral exhaust section, and then, after a predetermined time has elapsed, raising the height of the lid member relative to the bottom member to open the processing space.

19. A heat treatment method for heating a substrate on which a coating film has been formed, (a) A step of setting the height of the substrate relative to a heating plate having a mounting surface on which the substrate housed in the processing space is placed to a predetermined height such that it is a predetermined distance from the heating plate, and starting the heating process of the substrate, (b) When the heating treatment has progressed to a predetermined degree, the step of lowering the height of the substrate relative to the heating plate to a predetermined height, so that the substrate is placed on or close to the heating plate, and switching the exhaust of the processing space from OFF to ON, A heating method comprising the steps of determining whether the heating process has reached a predetermined stage, or determining the information to be used for such determination, based on data showing the relationship between the substrate temperature and heating time when the height of the substrate relative to the heating plate is a predetermined height at the current set temperature of the heating plate.

20. A heat treatment method for heating a substrate on which a coating film has been formed, (a) A step of setting the height of the substrate relative to a heating plate having a mounting surface on which the substrate housed in the processing space is placed to a predetermined height such that it is a predetermined distance from the heating plate, and starting the heating process of the substrate, (b) When the heating treatment has progressed to a predetermined degree, the step of lowering the height of the substrate relative to the heating plate to a predetermined height, so that the substrate is placed on or close to the heating plate, and switching the exhaust of the processing space from OFF to ON, A heating method comprising the steps of determining a predetermined height, determining whether the heating process has reached a predetermined stage, determining information to be used in the determination, or determining candidates for the information, based on data showing the relationship between substrate temperature and heating time for each temperature of the heating plate and for each height of the substrate relative to the heating plate.

21. A heat treatment method for heating a substrate on which a coating film has been formed, (a) A step of setting the height of the substrate relative to a heating plate having a mounting surface on which the substrate housed in the processing space is placed to a predetermined height such that it is a predetermined distance from the heating plate, and starting the heating process of the substrate, (b) When the heating treatment has progressed to a predetermined degree, the step of lowering the height of the substrate relative to the heating plate to a predetermined height, so that the substrate is placed on or close to the heating plate, and switching the exhaust of the processing space from OFF to ON, When a predetermined stage of progress is reached, the height of the substrate relative to the heating plate is lowered to a lower height than the predetermined height, so that the substrate is placed on or close to the heating plate, and the exhaust of the processing space is switched from OFF to ON. A heat treatment method comprising the step of replacing the oxygen-containing gas in the treatment space with an inert gas during the heat treatment.

Images