Electrode structure and method of manufacturing the same

Abstract

This disclosure provides an electrode structure. The electrode structure includes a substrate, a conductive layer, a nanoscale conductive structure, and several conductive particles. The conductive layer is disposed on the substrate. The nanoscale conductive structure is disposed on the conductive layer. The nanoscale conductive structure is doped with a nitrogen dopant. The conductive particles are distributed on the nanoscale conductive structure.

Description

Technical Field

[0001] This disclosure relates to an electrode structure and its manufacturing method. Prior Technology

[0002] In recent years, the development of supercapacitors has received considerable attention due to their application in electric vehicles. It is well known that traditional batteries or capacitors cannot provide sufficient power transfer for the required applications. Therefore, high-current, fast-charging and discharging performance is essential in today's environment.

[0003] Previous studies have shown that chemically synthesized electrode materials (e.g., vanadium oxide (V₂O₅)) may be suitable. To increase the surface area for chemical reactions, graphene was used to disperse these electrode materials. However, this method cannot effectively provide sufficient power and meet stability requirements.

[0004] Therefore, how to propose an electrode structure and its manufacturing method that can improve the electrical performance of the electrode structure is one of the problems that the industry is eager to invest research and development resources to solve. Summary of the Invention

[0005] In view of this, one of the purposes of this disclosure is to propose an electrode structure and its manufacturing method that can solve the above problems.

[0006] To achieve the above objectives, according to one embodiment of this disclosure, an electrode structure includes a substrate, a conductive layer, a nanoscale conductive structure, and a plurality of conductive particles. The conductive layer is disposed on the substrate. The nanoscale conductive structure is disposed on the conductive layer. The nanoscale conductive structure is doped with a nitrogen dopant. The plurality of conductive particles are distributed on the nanoscale conductive structure.

[0007] In one or more embodiments disclosed herein, the substrate is substantially a silicon substrate.

[0008] In one or more embodiments disclosed herein, the conductive layer is made of metal silicate.

[0009] In one or more embodiments disclosed herein, the conductive layer is composed of titanium disilide (TiSi2).

[0010] In one or more embodiments disclosed herein, the nanoscale conductive structure comprises several carbon nanotubes.

[0011] In one or more embodiments disclosed herein, the carbon nanotubes are elongated in the direction from the substrate to the conductive layer.

[0012] In one or more embodiments disclosed herein, the conductive particles are composed of vanadium nitride.

[0013] In one or more embodiments disclosed herein, the conductive particles are substantially dispersed on a nanoscale conductive structure.

[0014] To achieve the above objectives, according to one embodiment of this disclosure, an electrode structure includes a substrate, a conductive layer, a nanoscale conductive structure, and a plurality of conductive particles. The conductive layer is disposed on the substrate. The nanoscale conductive structure is disposed on the conductive layer. The nanoscale conductive structure includes a plurality of carbon nanotubes. The plurality of conductive particles are distributed on the nanoscale conductive structure.

[0015] In one or more embodiments disclosed herein, the substrate is substantially a silicon substrate.

[0016] In one or more embodiments disclosed herein, the conductive layer is made of metal silicate.

[0017] In one or more embodiments disclosed herein, the conductive layer is composed of titanium disilide (TiSi2).

[0018] In one or more embodiments disclosed herein, carbon nanotubes are elongated in the direction from the substrate to the conductive layer.

[0019] In one or more embodiments disclosed herein, the carbon nanotubes are ion-implanted.

[0020] In one or more embodiments disclosed herein, the conductive particles are composed of vanadium nitride.

[0021] In one or more embodiments disclosed herein, the conductive particles are substantially dispersed on a nanoscale conductive structure.

[0022] To achieve the above objectives, according to one embodiment of the present disclosure, a method for manufacturing an electrode structure includes: providing a substrate; forming a conductive layer on the substrate; forming a nanoscale conductive structure on the conductive layer; doping the nanoscale conductive structure with a nitrogen dopant; and forming a plurality of conductive particles on the nanoscale conductive structure.

[0023] In one or more embodiments disclosed herein, the nanoscale conductive structure comprises a plurality of carbon nanotubes. Performing the step of forming the nanoscale conductive structure causes the carbon nanotubes to elongate in the direction from the substrate to the conductive layer.

[0024] In one or more embodiments disclosed herein, the step of forming conductive particles on a nanoscale conductive structure is performed such that the conductive particles are uniformly distributed in each of the carbon nanotubes.

[0025] In one or more embodiments disclosed herein, the step of doping the nanoscale conductive structure with a nitrogen dopant is performed prior to the step of forming conductive particles on the nanoscale conductive structure.

[0026] In summary, the electrode structure and manufacturing method disclosed herein provide an electrode structure with sufficient power requirements and stable performance. In this electrode structure and manufacturing method, since the conductive particles are composed of vanadium nitride, the capacitance of the electrode structure can be significantly increased. In this electrode structure and manufacturing method, since the nanoscale conductive structure is doped with nitrogen, the nitrogen-doped nanoscale conductive structure can reduce the impedance of the electrode structure and further ensure the uniform distribution of conductive particles on the nanoscale conductive structure. In this electrode structure and manufacturing method, since the nanoscale conductive structure includes carbon nanotubes, the nanoscale conductive structure can ultimately meet the requirements of the nanoscale, thereby minimizing the electrode structure and improving electrical efficiency. In conclusion, the electrode structure and manufacturing method disclosed herein achieve the effect of rapid charging and discharging of the battery.

[0027] The above description is only used to illustrate the problem to be solved by this disclosure, the technical means to solve the problem, and the effects produced, etc. The specific details of this disclosure will be described in detail in the following implementation methods and related figures. Simple Explanation of the Diagram

[0028] To make the above and other objects, features, advantages and embodiments of this disclosure more apparent and understandable, the accompanying drawings are described below: Figure 1 is a flowchart illustrating a method for manufacturing an electrode structure according to an embodiment of the present disclosure. Figure 2 is a cross-sectional view illustrating an intermediate stage in the manufacturing of an electrode structure according to an embodiment of the present disclosure. Figure 3 is a cross-sectional view illustrating an intermediate stage in the manufacturing of an electrode structure according to an embodiment of this disclosure. Figure 4 is a cross-sectional view illustrating an intermediate stage in the manufacturing of an electrode structure according to an embodiment of this disclosure. Figure 5 is a cross-sectional view illustrating an intermediate stage in the manufacturing of an electrode structure according to an embodiment of the present disclosure. Figure 6 is a cross-sectional view illustrating an intermediate stage in the manufacturing of an electrode structure according to an embodiment of this disclosure. Implementation

[0029] The following disclosure provides numerous different embodiments or implementations for achieving various features of the provided patented subject matter. Specific embodiments of components and configurations are described below to simplify this disclosure. Of course, these are merely embodiments and are not intended to be limiting. For example, in the following description, the formation of a first feature above or on a second feature may include embodiments where the first and second features are in direct contact, and may also include embodiments where an additional feature may be formed between the first and second features, such that the first and second features are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in various embodiments of this disclosure. Such repetition is for simplicity and clarity and does not in itself define the relationship between the various embodiments and / or configurations discussed.

[0030] Furthermore, for ease of description, spatially related terms such as "below," "below," "under," "above," and "above" may be used herein to describe the relationship between one element or feature and another shown in the figures. In addition to the orientations depicted in the figures, spatially related terms are intended to cover different orientations of the device during use or operation. The device may be positioned in other ways (rotated 90 degrees or in other orientations), and the spatial relative terms used herein can be interpreted accordingly.

[0031] As used herein, “approximately,” “about,” “roughly,” or “substantially” generally means within 20%, 10%, or 5% of a given value or range. The values ​​given herein are approximate, meaning that the terms “approximately,” “about,” “roughly,” or “substantially” can be inferred unless explicitly stated otherwise.

[0032] Please refer to Figure 1. Figure 1 is a flowchart of a method M for manufacturing the electrode structure 100 shown in Figure 6 according to one embodiment of this disclosure. The method M shown in Figure 1 includes steps S101, S102, S103, S104, and S105. For a better understanding of step S101, please refer to Figures 1 and 2. For a better understanding of step S102, please refer to Figures 1 and 3. For a better understanding of step S103, please refer to Figures 1 and 4. For a better understanding of step S104, please refer to Figures 1 and 5. For a better understanding of step S105, please refer to Figures 1 and 6.

[0033] The following details steps S101, S102, S103, S104, and S105.

[0034] In step S101, a substrate 110 is provided, as shown in Figure 2.

[0035] Please refer to Figure 2. Figure 2 is a cross-sectional view of an intermediate stage in the fabrication of an electrode structure 100 according to an embodiment of this disclosure. As shown in Figure 2, a substrate 110 is provided. In this embodiment, the substrate 110 is substantially a silicon substrate. In some embodiments, the substrate 110 is substantially a wafer.

[0036] In some embodiments, substrate 110 is configured as an electrode of a semiconductor element. In some embodiments, substrate 110 may comprise materials such as polycrystalline silicon, monocrystalline silicon, amorphous silicon, or other similar materials. However, any suitable material may be used.

[0037] In some embodiments, the substrate 110 can be formed by any suitable method, such as CVD (chemical vapor deposition), PECVD (plasma-enhanced chemical vapor deposition), PVD (physical vapor deposition), ALD (atomic layer deposition), PEALD (plasma-enhanced atomic layer deposition), ECP (electrochemical plating), electroless plating, or other similar methods. This disclosure is not intended to limit the methods for forming the substrate 110.

[0038] In step S102, a conductive layer 120 is formed on the substrate 110, as shown in Figure 3.

[0039] Please refer to Figure 3, which is a cross-sectional view of an intermediate stage in the manufacturing of an electrode structure 100 according to an embodiment of this disclosure. In this embodiment, a conductive layer 120 is disposed on a substrate 110.

[0040] In some embodiments, the conductive layer 120 may be made of a conductive material. In some embodiments, the conductive layer 120 may be composed of a metal silicide. In some embodiments, the conductive layer 120 may contain materials such as titanium disilicide (TiSi2), cobalt disilicide (CoSi2), or other similar materials. However, any suitable material may be used.

[0041] In some embodiments, the conductive layer 120 can be formed by any suitable method, such as CVD (chemical vapor deposition), PECVD (plasma-enhanced chemical vapor deposition), PVD (physical vapor deposition), ALD (atomic layer deposition), PEALD (plasma-enhanced atomic layer deposition), ECP (electrochemical plating), electroless plating, or other similar methods. This disclosure is not intended to limit the methods for forming the conductive layer 120.

[0042] In step S103, a nanoscale conductive structure 130 is formed on the conductive layer 120, as shown in Figure 4.

[0043] Please refer to Figure 4. Figure 4 is a cross-sectional view of an intermediate stage in the fabrication of an electrode structure 100 according to an embodiment of this disclosure. In this embodiment, a nanoscale conductive structure 130 is disposed on a conductive layer 120. As shown in Figure 4, in some embodiments, the nanoscale conductive structure 130 is composed of several bar-shaped conductive materials. In some embodiments, the nanoscale conductive structure 130 may include several carbon nanotubes (CNTs). However, any suitable material can be used. As shown in Figure 4, in some embodiments where the nanoscale conductive structure 130 includes carbon nanotubes, the carbon nanotubes are elongated in the direction from the substrate 110 to the conductive layer 120. In some embodiments, the carbon nanotubes are independent (that is, the carbon nanotubes are separate from each other).

[0044] In some embodiments, the nanoscale conductive structure 130 can be formed by any suitable method, such as arc discharge, laser ablation, CVD (chemical vapor deposition), PECVD (plasma-enhanced chemical vapor deposition), PVD (physical vapor deposition), ALD (atomic layer deposition), PEALD (plasma-enhanced atomic layer deposition), or other similar methods. This disclosure is not intended to limit the methods for forming the nanoscale conductive structure 130.

[0045] In step S104, the nanoscale conductive structure 130 is doped, as shown in Figure 5.

[0046] Please refer to Figure 5. Figure 5 is a cross-sectional view of an intermediate stage in the fabrication of an electrode structure 100 according to an embodiment of this disclosure. In this embodiment, the nanoscale conductive structure 130 is modified by performing a modification process DOP. More specifically, the nanoscale conductive structure 130 reacts during the modification process DOP, causing the nanoscale conductive structure 130 to transform into a modified nanoscale conductive structure 140. In some embodiments, the modified nanoscale conductive structure 140 is formed in situ on the conductive layer 120 from the nanoscale conductive structure 130.

[0047] In some embodiments, the modified process DOP includes a doping process. In some embodiments, the modified process DOP may include methods such as ion implantation or other suitable methods. However, this disclosure is not intended to limit the type of modified process DOP.

[0048] In some embodiments, the modified nanoscale conductive structure 140 may comprise several doped carbon nanotubes (CNTs). However, any suitable material may be used.

[0049] In some embodiments, the modified nanoscale conductive structure 140 may be doped with a dopant, such as nitrogen (N) or other similar dopant. However, this disclosure is not intended to limit the type of dopant used to dope the modified nanoscale conductive structure 140.

[0050] In some embodiments, the modified nanoscale conductive structure 140 can be formed by any suitable method, such as CVD (chemical vapor deposition), PECVD (plasma-enhanced chemical vapor deposition), PVD (physical vapor deposition), ALD (atomic layer deposition), PEALD (plasma-enhanced atomic layer deposition), ECP (electrochemical plating), electroless plating, or other similar methods. This disclosure is not intended to limit the methods for forming the modified nanoscale conductive structure 140.

[0051] In step S105, several conductive particles 150 are formed on the modified nanoscale conductive structure 140, as shown in Figure 6.

[0052] Please refer to Figure 6. Figure 6 is a cross-sectional view of an intermediate stage in the fabrication of an electrode structure 100 according to an embodiment of this disclosure. In this embodiment, conductive particles 150 are formed on a modified nanoscale conductive structure 140 by performing a deposition process (DEP). More specifically, the deposition process (DEP) causes conductive particles 150 to be distributed on the modified nanoscale conductive structure 140. After performing step S105, the electrode structure 100 is formed.

[0053] In some embodiments, the conductive particles 150 are substantially uniformly distributed on the modified nanoscale conductive structure 140. In some embodiments, the conductive particles 150 are substantially dispersed on the modified nanoscale conductive structure 140. In some embodiments where the modified nanoscale conductive structure 140 includes carbon nanotubes, the conductive particles 150 are uniformly distributed on each carbon nanotube.

[0054] In some embodiments, the conductive particles 150 may be composed of a conductive material. In some embodiments, the conductive particles 150 may be composed of a metallic material. In some embodiments, the conductive particles 150 may contain materials such as vanadium nitride (VN) or other similar materials. However, any suitable material may be used.

[0055] In some embodiments, the conductive particles 150 can be formed by any suitable method, such as CVD (chemical vapor deposition), PECVD (plasma-enhanced chemical vapor deposition), PVD (physical vapor deposition), ALD (atomic layer deposition), PEALD (plasma-enhanced atomic layer deposition), ECP (electrochemical plating), electroless plating, or other similar methods. This disclosure is not intended to limit the methods for forming the conductive particles 150.

[0056] In some embodiments of the conductive particles 150 formed by PVD (physical vapor deposition), vanadium (V) is used as the sputtering target, and ammonia (NH3), nitrogen (N2), or combinations thereof are used as the process gases.

[0057] In some embodiments, the nitrogen-doped nanoscale conductive structure in step S104 is preferably performed before the formation of conductive particles on the nanoscale conductive structure in step S105.

[0058] By performing the method M shown in Figure 1 of this disclosure, an electrode structure 100 with better electrical properties can be formed. More specifically, the conductive particles 150 made of vanadium nitride (VN) have the advantage of high capacitance but the disadvantage of insufficient conductivity. However, the modified nano-conductive structure 140 formed by doping the nano-conductive structure 130 with a nitrogen dopant has the advantage of reduced resistivity. The combination of the modified nano-conductive structure 140 and the conductive particles 150 can indeed improve the capacitance and conductivity of the electrode structure 100 to meet consumer demands.

[0059] From the detailed description of the specific embodiments disclosed above, it is clear that the electrode structure and manufacturing method disclosed herein provide an electrode structure with sufficient power requirements and stable performance. In the electrode structure and manufacturing method disclosed herein, since the conductive particles are composed of vanadium nitride, the capacitance of the electrode structure can be significantly increased. In the electrode structure and manufacturing method disclosed herein, since the nanoscale conductive structure is doped with nitrogen, the nitrogen-doped nanoscale conductive structure can reduce the impedance of the electrode structure and further enable the conductive particles to be uniformly distributed on the nanoscale conductive structure. In the electrode structure and manufacturing method disclosed herein, since the nanoscale conductive structure includes carbon nanotubes, the nanoscale conductive structure can ultimately meet the requirements of the nanoscale, thereby minimizing the electrode structure and improving electrical efficiency. In summary, the electrode structure and manufacturing method disclosed herein achieve the effect of rapid charging and discharging of the battery.

[0060] Although this disclosure has been described in considerable detail with reference to certain embodiments thereof, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.

[0061] The foregoing outlines the features of several embodiments, enabling those skilled in the art to better understand the nature of this invention. Those skilled in the art should understand that the foregoing can be readily used as the basis for designs or modifications to achieve other variations without departing from the spirit and scope of this invention, in order to implement the same objectives and / or realize the same advantages of the embodiments described herein. The foregoing should be understood as illustrative of this disclosure, and its scope of protection should be determined by the claims.

[0062] 100: Electrode Structure 110:Substrate 120: Conductive layer 130: Nanoscale conductive structure 140: Modified nanoscale conductive structure 150: Conductive particles DEP: Deposition Process DOP: Modification Process M: Method S101, S102, S103, S104, S105: Steps

[0063] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. An electrode structure comprising: a substrate; a conductive layer disposed on the substrate; a nanoscale conductive structure disposed on the conductive layer, wherein the nanoscale conductive structure is doped with a nitrogen dopant; and a plurality of conductive particles distributed on the nanoscale conductive structure.

2. The electrode structure as described in claim 1, wherein the substrate is substantially a silicon substrate.

3. The electrode structure as claimed in claim 1, wherein the conductive layer is made of a metal silicate.

4. The electrode structure as described in claim 3, wherein the conductive layer is composed of titanium disilicide (TiSi2).

5. The electrode structure as described in claim 1, wherein the nanoscale conductive structure comprises a plurality of carbon nanotubes.

6. The electrode structure as claimed in claim 5, wherein the carbon nanotubes are elongated in one direction from the substrate to the conductive layer.

7. The electrode structure as described in claim 1, wherein the conductive particles are composed of vanadium nitride.

8. The electrode structure as described in claim 1, wherein the conductive particles are substantially dispersed on the nanoscale conductive structure.

9. An electrode structure comprising: a substrate; a conductive layer disposed on the substrate; a nanoscale conductive structure disposed on the conductive layer, wherein the nanoscale conductive structure comprises a plurality of carbon nanotubes; and a plurality of conductive particles distributed on the nanoscale conductive structure, wherein the nanoscale conductive structure is doped with a nitrogen dopant.

10. The electrode structure as described in claim 9, wherein the substrate is substantially a silicon substrate.

11. The electrode structure as claimed in claim 9, wherein the conductive layer is made of a metal silicate.

12. The electrode structure as claimed in claim 11, wherein the conductive layer is composed of titanium disilide (TiSi2).

13. The electrode structure as claimed in claim 9, wherein the carbon nanotubes are elongated in one direction from the substrate to the conductive layer.

14. The electrode structure as described in claim 9, wherein the carbon nanotubes are ion-implanted.

15. The electrode structure as described in claim 9, wherein the conductive particles are composed of vanadium nitride.

16. The electrode structure as described in claim 9, wherein the conductive particles are substantially dispersed on the nanoscale conductive structure.

17. A method for manufacturing an electrode structure, comprising: providing a substrate; forming a conductive layer on the substrate; forming a nanoscale conductive structure on the conductive layer; doping the nanoscale conductive structure with a nitrogen dopant; and forming a plurality of conductive particles on the nanoscale conductive structure.

18. The method of claim 17, wherein the nanoscale conductive structure comprises a plurality of carbon nanotubes, and the step of forming the nanoscale conductive structure causes the carbon nanotubes to be elongated in one direction from the substrate to the conductive layer.

19. The method as described in claim 18, wherein the step of forming the conductive particles on the nanoscale conductive structure is performed such that the conductive particles are uniformly distributed in each of the carbon nanotubes.

20. The method as claimed in claim 17, wherein the step of doping the nanoscale conductive structure with a nitrogen dopant is performed prior to the step of forming the conductive particles on the nanoscale conductive structure.

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