Display panel and preparation method therefor, and display module and display apparatus

Abstract

A display panel, comprising a display substrate, an encapsulation layer, and a touch stack. The display substrate has a light emission side and a non-light emission side arranged opposite each other. The encapsulation layer is arranged on the light emission side of the display substrate. The encapsulation layer comprises at least one inorganic layer; the at least one inorganic layer comprises a first inorganic layer, the first inorganic layer being an inorganic layer among the at least one inorganic layer that is closest to the display substrate. The touch stack is arranged on the side of the encapsulation layer away from the display substrate. The touch stack comprises at least one insulating layer. The edge of at least one insulating layer is in contact with the edge of the first inorganic layer, and the orthographic projection of the lower boundary of the edge of said insulating layer on the display substrate substantially coincides with the orthographic projection of the upper boundary of the edge of the first inorganic layer on the display substrate.

Description

Display panel and manufacturing method, display module, and display device

[0001] This application claims priority to Chinese patent application No. 202310862019.6, filed on July 13, 2023, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present disclosure relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof, a display module, and a display device. Background Art

[0003] With the rapid development of display technology, display devices have become increasingly ubiquitous in people's lives. Organic Light Emitting Diodes (OLEDs) are widely used in smart products such as mobile phones, televisions, and laptops due to their advantages such as self-luminescence, low power consumption, wide viewing angle, fast response, high contrast, and flexible display.

[0004] Summary of the Invention

[0005] On the one hand, a display panel is provided. The display panel includes a display substrate, an encapsulation layer, and a touch stack. The display substrate has a light-emitting side and a non-light-emitting side arranged opposite to each other. The encapsulation layer is arranged on the light-emitting side of the display substrate. The encapsulation layer includes at least one inorganic layer, and the at least one inorganic layer includes a first inorganic layer, which is the inorganic layer closest to the display substrate among the at least one inorganic layer. The touch stack is arranged on the side of the encapsulation layer away from the display substrate. The touch stack includes at least one insulating layer. There is at least one insulating layer whose edge portion contacts the edge portion of the first inorganic layer, and the orthographic projection of the lower boundary of the edge portion of the insulating layer on the display substrate roughly coincides with the orthographic projection of the upper boundary of the edge portion of the first inorganic layer on the display substrate.

[0006] In some embodiments, the touch stack includes a first metal layer, a first insulating layer, and a second metal layer. The first metal layer contacts the encapsulation layer. The first insulating layer is disposed on a side of the first metal layer away from the encapsulation layer. An edge portion of the first insulating layer contacts an edge portion of the first inorganic layer, and the orthographic projection of the lower boundary of the edge portion of the first insulating layer on the display substrate substantially coincides with the orthographic projection of the upper boundary of the edge portion of the first inorganic layer on the display substrate. The second metal layer is disposed on a side of the first insulating layer away from the encapsulation layer.

[0007] In some embodiments, one of the first and second metal layers includes multiple first touch electrodes, multiple second touch electrodes, and multiple first connecting portions, while the other includes multiple second connecting portions. Furthermore, two adjacent first touch electrodes are connected to the first connecting portions, and two adjacent second touch electrodes are connected to the second connecting portions. The first insulating layer has multiple first overlapping holes, and the second connecting portions extend into the first overlapping holes to connect to the second touch electrodes. The slope angle of the sidewalls of the first insulating layer at the first overlapping holes is between 64° and 80°.

[0008] In some embodiments, the slope angle of the sidewall of the edge portion of the first insulating layer is 50° to 65°, and the slope angle of the sidewall of the edge portion of the first inorganic layer is 65° to 80°.

[0009] In some embodiments, a second overlap hole is defined at the edge of the first insulating layer and the first inorganic layer, penetrating the first insulating layer and the first inorganic layer. The second metal layer includes a transition portion, and the display substrate includes a transition line, the transition portion extending into the second overlap hole and connected to the transition line. The edge of the first insulating layer has a slope angle of 50° to 65° at the sidewall of the second overlap hole, and the edge of the first inorganic layer has a slope angle of 65° to 80° at the sidewall of the second overlap hole.

[0010] In some embodiments, the display panel includes a display area and a peripheral area surrounding the display area, wherein the peripheral area includes a wiring area and a pad area. The pad area is located on one side of the display area; the wiring area surrounds a portion of the display area and is connected to the pad area. The first inorganic layer covers the display area and extends to the peripheral area.

[0011] Along the display area toward the pad area, the pad area includes, in order, a transition area, a bending area, and a circuit board binding area. The transition area is provided with a second overlap hole, and the circuit board binding area is provided with a bonding pad. The first insulating layer and the first inorganic layer expose a first region and cover a second region. The first region includes the second overlap hole region, the bonding pad region, and the bending area; the second region is the portion of the pad area excluding the first region.

[0012] In some embodiments, the encapsulation layer further comprises a second inorganic layer and a first organic layer. The second inorganic layer is located on a side of the first inorganic layer away from the display substrate. The boundary of the orthographic projection of the second inorganic layer on the display substrate is located between the display area and the boundary of the orthographic projection of the first inorganic layer on the display substrate. The edge portion of the first insulating layer also contacts the sidewall of the second inorganic layer. The first organic layer is located between the first inorganic layer and the second inorganic layer. And the boundary of the orthographic projection of the first organic layer on the display substrate is located between the display area and the boundary of the orthographic projection of the second inorganic layer on the display substrate.

[0013] In some embodiments, the display substrate includes a substrate and a crack prevention structure. The crack prevention structure is disposed on a side of the substrate near the encapsulation layer and is located in the wiring area. The crack prevention structure surrounds a portion of the display area and terminates at the pad area. Furthermore, the orthographic projection of the crack prevention structure on the substrate is located outside the orthographic projection of the first inorganic layer on the substrate.

[0014] The minimum distance between the orthographic projection of the crack prevention structure on the substrate and the orthographic projection of the first inorganic layer on the substrate is a first distance, and the minimum distance between the orthographic projection of the crack prevention structure on the substrate and the orthographic projection of the second inorganic layer on the substrate is a second distance. The first distance is greater than the second distance.

[0015] In some embodiments, the distance between the orthographic projection of the crack prevention structure on the substrate and the orthographic projection of the first inorganic layer on the substrate is 20 μm to 50 μm. And / or the distance between the orthographic projection of the crack prevention structure on the substrate and the orthographic projection of the second inorganic layer on the substrate is 50 μm to 100 μm.

[0016] In some embodiments, the display substrate further includes a substrate and a barrier dam. The barrier dam is disposed on a side of the substrate proximate the encapsulation layer and is located in the wiring area. The barrier dam surrounds the display area. Furthermore, the orthographic projection of the barrier dam on the substrate is located between two boundaries of the orthographic projections of the first organic layer and the second inorganic layer on the substrate.

[0017] In some embodiments, in the routing area, a distance between a boundary of an orthographic projection of the first inorganic layer on the display substrate and a boundary of an orthographic projection of the second inorganic layer on the display substrate is 0 μm to 30 μm.

[0018] In some embodiments, the touch stack includes a second insulating layer, a first metal layer, a first insulating layer, and a second metal layer. The second insulating layer contacts the encapsulation layer; an edge portion of the second insulating layer contacts an edge portion of the first inorganic layer, and an orthographic projection of a lower boundary of the edge portion of the second insulating layer on the display substrate substantially coincides with an orthographic projection of an upper boundary of an edge portion of the first inorganic layer on the display substrate. The first metal layer is disposed on a side of the second insulating layer away from the encapsulation layer.

[0019] The first insulating layer is disposed on a side of the first metal layer away from the encapsulation layer; an orthographic projection of a lower boundary of an edge portion of the first insulating layer on the display substrate substantially coincides with an orthographic projection of an upper boundary of an edge portion of the second insulating layer on the display substrate. The second metal layer is disposed on a side of the first insulating layer away from the encapsulation layer.

[0020] In some embodiments, the materials of the first inorganic layer and the insulating layer include silicide, and the material of one of the first inorganic layer and the insulating layer includes silicon oxide, while the material of the other does not include silicon oxide.

[0021] In another aspect, a display module is provided, comprising the display panel according to any one of the above embodiments and a circuit board, wherein the circuit board is connected to the display panel.

[0022] In another aspect, a display device is provided, comprising a housing and the display module as described in the above embodiment, wherein the display module is disposed in the housing.

[0023] In another aspect, a method for manufacturing a display panel is provided. The method includes preparing a display substrate. The display substrate includes a display area and a peripheral area surrounding the display area, the peripheral area including a pad area and a wiring area, the pad area being located to one side of the display area; the wiring area surrounding a portion of the display area and being connected to the pad area; the display substrate includes a substrate and a crack prevention structure and a barrier dam disposed on the substrate; the crack prevention structure surrounding a portion of the display area and terminating at the pad area; the barrier dam surrounding the display area and being located between the crack prevention structure and the display area.

[0024] A first inorganic thin film is formed on the light-emitting side of the display substrate. The first inorganic thin film is in contact with the display substrate, and the boundary of the first inorganic thin film is roughly flush with the boundary of the substrate. A first metal layer is formed on the side of the first inorganic thin film away from the display substrate. A first insulating thin film is formed on the side of the first metal layer away from the display substrate. The boundary of the first insulating film is roughly flush with the boundary of the substrate. The first insulating film and the first inorganic thin film are simultaneously etched to form a first insulating layer and a first inorganic layer. The boundary of the range of the orthographic projection of the first inorganic layer and the first insulating layer on the substrate is located between the two opposite boundaries of the orthographic projection of the anti-crack structure and the blocking dam on the substrate. A second metal layer is formed on the side of the first insulating layer away from the display substrate.

[0025] In some embodiments, the synchronous etching is performed using a dry etching process.

[0026] In some embodiments, during the process of simultaneously etching the first insulating film and the first inorganic film to form the first inorganic layer and the first insulating layer, an etching selectivity ratio of the first insulating film to the first inorganic film is greater than 1.

[0027] In some embodiments, before forming the first metal layer on the side of the first inorganic thin film away from the display substrate, the method for manufacturing a display panel further includes: forming a second insulating film on the side of the first inorganic thin film away from the display substrate, wherein the boundary of the second insulating film is substantially flush with the boundary of the substrate. During the simultaneous etching of the first insulating film and the first inorganic thin film to form the first inorganic layer and the first insulating layer, the second insulating film is also simultaneously etched to form the second insulating layer.

[0028] In some embodiments, before forming the first metal layer on the side of the first inorganic thin film away from the display substrate, the method for manufacturing a display panel further includes: forming a first organic layer on the side of the first inorganic thin film away from the display substrate. The boundary of the orthographic projection of the first organic layer on the display substrate is located between the display area and the inner boundary of the orthographic projection of the blocking dam on the display substrate. A second inorganic layer is formed on the side of the first organic layer away from the display substrate. The boundary of the orthographic projection of the second inorganic layer on the display substrate is located between two opposite boundaries of the orthographic projection of the blocking dam and the first inorganic layer on the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of the present disclosure.

[0030] FIG1 is a structural diagram of a display device according to some embodiments;

[0031] FIG2 is a structural diagram of another display device according to some embodiments;

[0032] FIG3 is a cross-sectional view taken along section line AA′ in FIG1 ;

[0033] FIG4 is a structural diagram of a touch stack of a display panel according to some embodiments;

[0034] FIG5 is a cross-sectional view along section line EE' in FIG4;

[0035] FIG6 is another cross-sectional view along section line EE' in FIG4;

[0036] FIG7 is a structural diagram of a display panel according to some embodiments;

[0037] FIG8 is a cross-sectional view along section line FF′ in FIG7 ;

[0038] FIG9 is another cross-sectional view along section line FF′ in FIG7 ;

[0039] FIG10 is a cross-sectional view along section line GG′ in FIG7 ;

[0040] FIG11 is another cross-sectional view along section line GG′ in FIG7 ;

[0041] FIG12 is a cross-sectional view taken along section line HH′ in FIG7 ;

[0042] FIG13 is another cross-sectional view taken along section line HH′ in FIG7 ;

[0043] FIG14 is a partial enlarged view of a first overlapping hole of a display panel according to some embodiments;

[0044] FIG15 is a partial enlarged view of a second overlapping hole of a display panel according to some embodiments;

[0045] FIG16 is a partial enlarged view of edges of a first insulating layer and a first inorganic layer of a display panel according to some embodiments;

[0046] 17 to 19 are flow charts of methods for manufacturing a display panel according to some embodiments;

[0047] 20 and 21 are process step diagrams of a method for manufacturing a display panel according to some embodiments. DETAILED DESCRIPTION

[0048] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0049] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the particular features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0050] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0051] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0052] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0053] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0054] The use of "adapted to" or "configured to" herein is intended to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0055] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0056] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0057] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0058] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0059] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0060] As shown in FIG1 , some embodiments of the present disclosure provide a display device 1000 . The display device 1000 may be any device that displays an image, whether in motion (eg, video) or stationary (eg, still image), and whether textual or graphic.

[0061] For example, the display device 1000 can be any product or component with a display function, such as a television, a laptop computer, a tablet computer, a mobile phone, a personal digital assistant (PDA), a navigator, a wearable device, a virtual reality (VR) device, etc.

[0062] For example, as shown in FIG1 , the display device 1000 may be a portable display product; for example, the display device 1000 may be the mobile phone shown in FIG1 . For another example, as shown in FIG2 , the display device 1000 may be a wearable device; for example, the display device 1000 may be the watch shown in FIG2 .

[0063] In the following, some embodiments of the present disclosure are schematically described by taking the display device 1000 as the mobile phone shown in FIG. 1 as an example, but the implementation manner of the present disclosure is not limited thereto.

[0064] 3 , a display device 1000 includes a display module 100 and a housing 200. The display module 100 is disposed in the housing 200. The housing 200 may have a U-shaped longitudinal section, for example.

[0065] 3 , the display module 100 may include other electronic components such as a display panel 10 , a cover plate 20 , and a circuit board 30 . The display panel 10 and the circuit board 30 may be disposed within a housing 200 , and the cover plate 20 may be disposed at an opening of the housing 200 .

[0066] The display panel 10 has a display side and a back side that are arranged opposite to each other. The circuit board 30 can be bound and connected to the display panel 10 at the end of the display panel 10 and can be bent to the back side of the display panel 10 along with the display panel 10.

[0067] It should be noted that the display side refers to the side of the display panel 10 displaying an image (the upper side of the display panel 10 in FIG3 ), and the back side refers to the other side opposite to the display side (the lower side of the display panel 10 in FIG3 ).

[0068] In addition, the display panel 10 can be of various types and can be selected according to actual needs.

[0069] For example, the display panel 10 may be an organic light emitting diode (OLED) display panel, a quantum dot light emitting diode (QLED) display panel, etc., which is not specifically limited in the embodiments of the present disclosure.

[0070] The following uses the above-mentioned display panel 10 as an organic light-emitting diode display panel as an example to schematically illustrate some embodiments of the present disclosure, but the implementation of the present disclosure is not limited to this, and any other display panel 10 can also be considered as long as the same technical concept is applied.

[0071] In some embodiments, referring to FIG. 4 and FIG. 5 , the display panel 10 includes a display substrate 110 and an encapsulation layer 120 for encapsulating the display substrate 110 .

[0072] Among them, the display substrate 110 has a light-emitting side (the upper side of the display substrate 110 in Figure 5) and a non-light-emitting side (the lower side of the display substrate 110 in Figure 5) that are relatively arranged, and the encapsulation layer 120 is arranged on the light-emitting side of the display substrate 110 to improve the barrier performance of the display panel 10 against water and oxygen.

[0073] In some examples, as shown in FIG5 , the encapsulation layer 120 is formed directly on the light-emitting side of the display substrate 110 using a thin film encapsulation process, i.e., no other film layer is disposed between the encapsulation layer 120 and the display substrate 110. This arrangement reduces the thickness of the display panel 10, facilitating a lightweight and thin display panel.

[0074] Exemplarily, as shown in FIG. 5 , the encapsulation layer 120 includes at least one inorganic layer 12 , and the at least one inorganic layer 12 includes a first inorganic layer 121 . The first inorganic layer 121 is the inorganic layer 12 closest to the display substrate 110 among the at least one inorganic layer 12 .

[0075] The thickness of the first inorganic layer 121 may be 0.5 μm to 1.5 μm. For example, the thickness of the first inorganic layer 121 may be any one of 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, 1 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, and 1.5 μm.

[0076] In related technologies, a patterned first inorganic layer is formed directly on a display substrate through a chemical vapor deposition process using a first mask plate as a mask. However, during the formation of the first inorganic layer, a gap exists between the first mask plate and the display substrate, into which material is deposited. This results in a thinner film thickness at the edges of the prepared first inorganic layer, causing a powdering phenomenon when the display panel is illuminated.

[0077] Based on this, referring to FIG. 5 , some embodiments of the present disclosure provide a display panel 10 including a display substrate 110 , an encapsulation layer 120 and a touch stack 130 .

[0078] As shown in FIG. 5 and FIG. 6 , the touch stack 130 is disposed on a side of the encapsulation layer 120 away from the display substrate 110 .

[0079] 7 to 13 , the touch stack 130 includes at least one insulating layer 13. The edge of at least one insulating layer 13 contacts the edge of the first inorganic layer 121, and the orthographic projection of the lower edge of the insulating layer 13 (close to the edge of the display substrate 110) on the display substrate 110 substantially coincides with the orthographic projection of the upper edge of the first inorganic layer 121 (close to the edge of the insulating layer 13) on the display substrate 110.

[0080] It should be noted that the edge portion of the insulating layer 13 and the inorganic layer 12 is a portion of the insulating layer 13 and the inorganic layer 12 that is outside the boundary of the second inorganic layer 123 (see FIG. 7 ) mentioned below.

[0081] In addition, the material of the inorganic layer 12 and the insulating layer 13 includes a silicon-based material, for example, the material of the inorganic layer 12 and the insulating layer 13 includes at least one of silicon oxide, silicon nitride, silicon carbonitride, silicon oxynitride, and silicon oxycarbide.

[0082] 5 and 6 , the first inorganic layer 121 and the insulating layer 13 are made of different materials. For example, the first inorganic layer 121 and the insulating layer 13 are made of silicide, and one of the first inorganic layer 121 and the insulating layer 13 is made of silicon oxide, while the other is not made of silicon oxide.

[0083] For example, the material of the first inorganic layer 121 includes silicon oxynitride and / or silicon oxide, while the material of the insulating layer 13 includes silicon nitride and / or silicon carbonitride. For example, the material of the first inorganic layer 121 is silicon oxynitride, and the material of the insulating layer 13 is silicon nitride. In this arrangement, one of the first inorganic layer 121 and the insulating layer 13 contains oxygen atoms, while the other does not. This facilitates distinguishing the film quality by detecting whether the film contains oxygen atoms.

[0084] It should be understood that the touch stack 130 can be formed directly on the side of the encapsulation layer 120 of the display panel 10 away from the display substrate 110 through a semiconductor process. That is, no other film layer is provided between the touch stack 130 and the encapsulation layer 120, which is conducive to achieving a lighter and thinner display panel 10.

[0085] At this time, the insulating layer 13 in the touch stack 130 is prepared in the following steps: first, an insulating film is deposited on the entire surface of the encapsulation layer 120 ; and then, a second mask plate is used as a mask to form a patterned insulating layer 13 through an etching process.

[0086] On this basis, since the upper boundary of the edge portion of the first inorganic layer 121 roughly coincides with the lower boundary of the insulating layer 13 with which it contacts, the first inorganic layer 121 can also first be deposited as an inorganic thin film on the entire surface of the display substrate 110, and in the process of using the second mask plate as a mask to form a patterned insulating layer 13 through an etching process, the inorganic thin film is simultaneously etched to form a patterned first inorganic layer 121. For details, please refer to the preparation method of the display panel 10 mentioned below.

[0087] As can be seen from the above, the first inorganic layer 121 can be patterned by etching simultaneously with the insulating layer 13 in contact therewith, thereby improving production efficiency. Furthermore, this etching process does not adversely affect the thickness of the edge of the formed first inorganic layer 121, thus avoiding the need to deposit the patterned first inorganic layer 121 using a first mask. This not only improves the uniformity of the thickness of the first inorganic layer 121 and alleviates the powdering phenomenon that occurs at the edge of the display panel 10 when it is illuminated, but also eliminates a mask layer (the first mask), reducing costs.

[0088] In some embodiments, as shown in FIG. 5 , the touch stack 130 includes a first insulating layer 131 , a second insulating layer 132 , a first metal layer 133 , and a second metal layer 134 .

[0089] 5 , the second insulating layer 132 contacts the encapsulation layer 120 . The thickness of the second insulating layer 132 may be 0.2 μm to 0.4 μm. For example, the thickness of the second insulating layer 132 may be any one of 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm, and 0.4 μm.

[0090] 5, 7, and 8, the edge of the second insulating layer 132 contacts the edge of the first inorganic layer 121, and the orthographic projection of the lower boundary of the edge of the second insulating layer 132 on the display substrate 110 substantially coincides with the orthographic projection of the upper boundary of the edge of the first inorganic layer 121 on the display substrate 110. In this case, the first inorganic layer 121 can be patterned by being etched simultaneously with the second insulating layer 132.

[0091] As shown in FIG5 , the first metal layer 133 is disposed on a side of the second insulating layer 132 away from the encapsulation layer 120, the first insulating layer 131 is disposed on a side of the first metal layer 133 away from the encapsulation layer 120, and the second metal layer 134 is disposed on a side of the first insulating layer 131 away from the encapsulation layer 120. That is, the first insulating layer 131 is disposed between the first metal layer 133 and the second metal layer 134.

[0092] The thickness of the first insulating layer 131 may be 0.2 μm to 0.4 μm. For example, the thickness of the first insulating layer 131 may be any one of 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm, and 0.4 μm.

[0093] 5, 7, and 8, the orthographic projection of the lower edge of the first insulating layer 131 on the display substrate 110 substantially coincides with the orthographic projection of the upper edge of the second insulating layer 132 on the display substrate 110. At this point, the first insulating layer 131 and the second insulating layer 132 can be simultaneously etched to achieve patterning.

[0094] Based on the above, the first inorganic layer 121 , the first insulating layer 131 and the second insulating layer 132 can be patterned by simultaneous etching, and the etching depth can be the sum of the thicknesses of the first inorganic layer 121 , the first insulating layer 131 and the second insulating layer 132 .

[0095] For example, the thickness of the first inorganic layer 121 is 1 μm, the thickness of the first insulating layer 131 is 0.35 μm, and the thickness of the second insulating layer 132 is 0.3 μm, and the etching depth is 1.65 μm.

[0096] It should be noted that the first inorganic layer 121 and the second insulating layer 132 can simultaneously serve as etching stop layers for patterning the first insulating layer 131 through an etching process, so as to prevent the first insulating layer 131 from being overetched and causing damage to the display substrate 110 .

[0097] In some other embodiments, as shown in FIG. 6 , the touch stack 130 includes a first insulating layer 131 , a first metal layer 133 , and a second metal layer 134 .

[0098] As shown in FIG6 , the first metal layer 133 is in contact with the encapsulation layer 120. The first insulating layer 131 is disposed on a side of the first metal layer 133 away from the encapsulation layer 120. The second metal layer 134 is disposed on a side of the first insulating layer 131 away from the encapsulation layer 120. That is, the first insulating layer 131 is disposed between the first metal layer 133 and the second metal layer 134.

[0099] The thickness of the first insulating layer 131 may be 0.2 μm to 0.4 μm. For example, the thickness of the first insulating layer 131 may be any one of 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm, and 0.4 μm.

[0100] In addition, referring to Figures 6, 7 and 9, the edge portion of the first insulating layer 131 contacts the edge portion of the first inorganic layer 121, and the orthographic projection of the lower boundary of the edge portion of the first insulating layer 131 on the display substrate 110 roughly coincides with the orthographic projection of the upper boundary of the edge portion of the first inorganic layer 121 on the display substrate 110.

[0101] At this time, the first inorganic layer 121 can be patterned by being etched synchronously with the first insulating layer 131, and the etching depth can be the sum of the thicknesses of the first inorganic layer 121 and the first insulating layer 131. For example, if the thickness of the first inorganic layer 121 is 1 μm and the thickness of the first insulating layer 131 is 0.35 μm, the etching depth is 1.35 μm.

[0102] It should be noted that the first inorganic layer 121 can serve as an etch stop layer for patterning the first insulating layer 131 during the etching process, thereby preventing over-etching of the first insulating layer 131 and damaging the display substrate 110. Thus, compared to related technologies, the touch stack 130 can eliminate one insulating layer, simplify the process, approximately double the production capacity, and reduce process equipment and materials, thereby lowering costs.

[0103] The following uses an example in which the touch stack 130 includes a first insulating layer 131, a first metal layer 133, and a second metal layer 134 to schematically illustrate some embodiments of the present disclosure. However, the embodiments of the present disclosure are not limited thereto, and any other touch stack 130 may also be considered as long as the same technical concept is applied.

[0104] In some embodiments, referring to FIG4 , one of the first metal layer 133 and the second metal layer 134 includes a plurality of first touch electrodes 41, a plurality of second touch electrodes 42, and a plurality of first connecting portions 43, while the other includes a plurality of second connecting portions 44. Furthermore, two adjacent first touch electrodes 41 are connected to the first connecting portions 43, and two adjacent second touch electrodes 42 are connected to the second connecting portions 44.

[0105] Exemplarily, as shown in FIG. 4 and FIG. 6 , the first insulating layer 131 defines a plurality of first overlapping holes H1 , and the second connecting portions 44 extend into the first overlapping holes H1 to connect with the second touch electrodes 42 .

[0106] 14 , as the etching depth increases, the slope angle α1 of the first insulating layer 131 on the sidewall of the first overlapping hole H1 ranges from 64° to 80°. For example, the slope angle α1 of the first insulating layer 131 on the sidewall of the first overlapping hole H1 can be any one of 64°, 65°, 68°, 70°, 72°, 73°, 75°, 77°, 78°, and 80°.

[0107] Based on the above, the first touch electrode 41 and the second touch electrode 42 can form a capacitive node. By applying a pulse or alternating voltage to one of the first touch electrode 41 and the second touch electrode 42, a charge can be induced on the other. The amount of induced charge can be susceptible to external influences (e.g., the touch or proximity of a finger). When a finger touches or approaches the capacitive node, a capacitance change can occur at the capacitive node, and the capacitance change can be measured by the touch electrode that induced the charge. By measuring the capacitance change across the entire touch stack 130, the location of the touch or proximity can be determined.

[0108] Some embodiments of the present disclosure are schematically described below by taking the example that the first metal layer 133 includes multiple first touch electrodes 41, multiple second touch electrodes 42, and multiple first connecting portions 43, and the second metal layer 134 includes multiple second connecting portions 44, but the implementation methods of the present disclosure are not limited thereto.

[0109] In some embodiments, as shown in Figure 7, the display panel 10 includes a display area A and a peripheral area B surrounding the display area A. The peripheral area B includes a wiring area C and a padding area D. The padding area D is located on one side of the display area A. The wiring area C surrounds part of the display area A and is connected to the padding area D.

[0110] It should be noted that, referring to FIG. 4 , the first touch electrodes 41 and the second touch electrodes 42 form a touch area, and the touch area covers the display area A.

[0111] As shown in Figure 7 , along the display area A, the pad area D includes a transition area D1, a bending area D2, and a circuit board bonding area D3. In conjunction with Figures 12 and 13 , the display substrate 110 includes bonding pads 112 located in the circuit board bonding area D3. In other words, the circuit board bonding area D3 is provided with bonding pads 112.

[0112] On this basis, in conjunction with FIG. 3 , the circuit board 30 is connected to the display panel 10 via the bonding pads 112 , and is bent to the back side of the display panel 10 along with the portion of the display panel 10 located in the bending region D2 .

[0113] In some examples, referring to FIG. 10 to FIG. 13 , the display substrate 110 further includes a plurality of transfer lines 111 , and the plurality of transfer lines 111 are located on the same conductive layer or two conductive layers.

[0114] For example, as shown in FIG6 , the display substrate 110 includes a substrate 1, a semiconductor layer ACT, a gate insulating layer GI, a gate conductive layer GT, an interlayer insulating layer ILD, a source / drain conductive layer SD, a passivation layer PVX, a planarization layer PLN, an anode layer AND, a light-emitting layer EL, and a cathode layer CTD, which are arranged in this order. In this case, the connecting line 111 can be located in the source / drain conductive layer SD.

[0115] It should be noted that the display substrate 110 is illustrated as including one gate conductive layer GT and one source / drain conductive layer SD. Of course, it may also include two or more gate conductive layers GT and source / drain conductive layers SD.

[0116] One end of the transfer line 111 is located in the transfer area D1 , and the other end extends through the bending area D2 and is connected to the binding pad 112 of the circuit board binding area D3 .

[0117] At this point, the signal lines of the display panel 10 are all connected to the adapter lines 111 in the adapter area D1, and thus to the corresponding bonding pads 112. In this case, the bending area D2 has only one or two conductive layers, which can reduce the bending resistance of the bending area D2 and reduce the risk of disconnection of the circuit traces in the bending area D2.

[0118] Based on the above, as shown in Figures 10 and 11 , second bonding holes H2 are further defined at the edges of the first insulating layer 131 and the first inorganic layer 121, penetrating the first insulating layer 131 and the first inorganic layer 121. The second metal layer 134 includes a transition portion 45, which extends into the second bonding hole H2 and connects to the transition line 111, thereby connecting the first touch electrode 41 and the second touch electrode 42 to the corresponding bonding pad 112.

[0119] At this time, referring to Figures 10 and 11 , in order to form a second overlapping hole H2 with a larger opening area so that the transition portion 45 can extend into the second overlapping hole H2 and connect to the transition line 111, the first insulating layer 131 and the first inorganic layer 121 have different etching selectivities for the same etching gas. That is, the first insulating layer 131 and the first inorganic layer 121 are made of different materials. For example, the first inorganic layer 121 may be made of silicon oxynitride, while the first insulating layer 131 may be made of silicon nitride.

[0120] The etching selectivity ratio between the first insulating layer 131 and the first inorganic layer 121 is greater than 1, thereby forming a second overlapping hole H2 having a larger opening area. That is, the slope angle α2 of the edge portion of the first insulating layer 131 on the sidewall of the second overlapping hole H2 is smaller than the slope angle α3 of the edge portion of the first inorganic layer 121 on the sidewall of the second overlapping hole H2.

[0121] Exemplarily, as shown in Figure 15, the slope angle α2 of the side wall of the edge portion of the first insulating layer 131 of the second overlapping hole H2 is 50° to 65°. For example, the slope angle α2 of the side wall of the edge portion of the first insulating layer 131 is any one of 50°, 51°, 53°, 55°, 58°, 60°, 62° and 65°.

[0122] 15 , the slope angle α3 of the sidewall of the edge portion of the first inorganic layer 121 at the second overlapping hole H2 is 65° to 80°. For example, the slope angle α3 of the sidewall of the edge portion of the first inorganic layer 121 is any one of 65°, 67°, 68°, 70°, 72°, 75°, 78°, and 80°.

[0123] 16 , the slope angle α4 of the sidewall at the edge of the first insulating layer 131 is substantially equal to the slope angle α2 of the sidewall at the edge of the first insulating layer 131 in the second overlapping hole H2. The slope angle α5 of the sidewall at the edge of the first inorganic layer 121 is substantially equal to the slope angle α3 of the sidewall at the edge of the first inorganic layer 121 in the second overlapping hole H2.

[0124] 16 , the slope angle α4 of the sidewall of the edge portion of the first insulating layer 131 and the slope angle α2 of the sidewall of the edge portion of the first insulating layer 131 in the second overlapping hole H2 are 50° to 65°. For example, the slope angle α4 of the sidewall of the edge portion of the first insulating layer 131 is any one of 50°, 51°, 53°, 55°, 58°, 60°, 62°, and 65°.

[0125] 16 , the slope angle α5 of the sidewall of the edge portion of the first inorganic layer 121 is 65° to 80°. For example, the slope angle α5 of the sidewall of the edge portion of the first inorganic layer 121 is any one of 65°, 67°, 68°, 70°, 72°, 75°, 78°, and 80°.

[0126] In some embodiments, as shown in FIG. 7 , FIG. 11 , and FIG. 13 , the pad region D further includes a first region M1 and a second region M2 , and the first insulating layer 131 and the first inorganic layer 121 expose the first region M1 and cover the second region M2 .

[0127] The first region M1 includes the region of the second overlap hole H2, the region of the bonding pad 112, and the bending region D2. The second region M2 is the region of the pad region D excluding the first region M1.

[0128] In some embodiments, as shown in FIG. 5 and FIG. 6 , the encapsulation layer 120 further includes a first organic layer 122 and a second inorganic layer 123 .

[0129] As shown in FIG6 , the second inorganic layer 123 is located on a side of the first inorganic layer 121 away from the display substrate 110. The boundary of the orthographic projection of the second inorganic layer 123 on the display substrate 110 is located between the display area A and the boundary of the orthographic projection of the first inorganic layer 121 on the display substrate 110. The edge portion of the first insulating layer 13 also contacts the sidewall of the second inorganic layer 123.

[0130] It should be noted that the material of the second inorganic layer 123 includes silicide. Exemplarily, the material of the second inorganic layer 123 includes silicon nitride. For example, the material of the second inorganic layer 123 includes silicon nitride.

[0131] The thickness of the second inorganic layer 123 may be 0.5 μm to 1 μm. For example, the thickness of the second inorganic layer 123 may be any one of 0.5 μm, 0.6 μm, 0.65 μm, 0.7 μm, 0.8 μm, 0.85 μm, 0.9 μm, and 1 μm.

[0132] 6 and 7 , the first organic layer 122 is located between the first inorganic layer 121 and the second inorganic layer 123 . Furthermore, the boundary of the orthographic projection of the first organic layer 122 on the display substrate 110 is located between the display area A and the boundary of the orthographic projection of the second inorganic layer 123 on the display substrate 110 .

[0133] Among them, in the wiring area C, the distance between the boundary of the orthographic projection of the first inorganic layer 121 on the display substrate 110 and the boundary of the orthographic projection of the second inorganic layer 123 on the display substrate 110 is 0μm to 30μm. For example, in the wiring area C, the distance between the boundary of the orthographic projection of the first inorganic layer 121 on the display substrate 110 and the boundary of the orthographic projection of the second inorganic layer 123 on the display substrate 110 is 10μm to 20μm. In this way, the packaging performance is better, and it can be avoided that when the first inorganic layer 121 and the first insulating layer 131 are simultaneously etched, the second inorganic layer 123 needs to be etched away simultaneously. The etching depth does not need to consider the thickness of the second inorganic layer 123, thereby reducing the risk of disconnection in the touch stack 130 due to over-etching.

[0134] In some embodiments, as shown in FIG6 , FIG7 and FIG9 , the display substrate 110 includes a substrate 1 and a crack prevention structure 2 , and the crack prevention structure 2 is used to prevent cracks from being generated during the process of cutting the display motherboard into a plurality of display substrates 110 .

[0135] It should be noted that the crack prevention structure 2 may be a groove formed on the substrate 1 or a protrusion formed on the substrate 1 , and the figure takes the protrusion as an example for illustration.

[0136] As shown in Figures 6, 7, and 9, the crack prevention structure 2 is disposed on the side of the substrate 1 near the encapsulation layer 120 and is located in the wiring area C. The crack prevention structure 2 surrounds a portion of the display area A and terminates at the pad area D. Furthermore, the orthographic projection of the crack prevention structure 2 on the substrate 1 is located outside the orthographic projection of the first inorganic layer 121 on the substrate 1.

[0137] As shown in Figures 7 and 9, the minimum distance between the orthographic projection of the crack prevention structure 2 on the substrate 1 and the orthographic projection of the first inorganic layer 121 on the substrate 1 is a first distance, and the minimum distance between the orthographic projection of the crack prevention structure 2 on the substrate 1 and the orthographic projection of the second inorganic layer 123 on the substrate 1 is a second distance. The first distance is greater than the second distance.

[0138] Exemplarily, the distance between the orthographic projection of the crack prevention structure 2 on the substrate 1 and the orthographic projection of the first inorganic layer 121 on the substrate 1 is 20 μm to 50 μm. For example, the distance between the orthographic projection of the crack prevention structure 2 on the substrate 1 and the orthographic projection of the first inorganic layer 121 on the substrate 1 is any one of 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, and 50 μm.

[0139] Exemplarily, the distance between the orthographic projection of the crack prevention structure 2 on the substrate 1 and the orthographic projection of the second inorganic layer 123 on the substrate 1 is 50 μm to 100 μm. For example, the distance between the orthographic projection of the crack prevention structure 2 on the substrate 1 and the orthographic projection of the second inorganic layer 123 on the substrate 1 is any one of 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 90 μm, and 100 μm.

[0140] In some embodiments, referring to FIG. 7 and FIG. 9 , the display substrate 110 further includes a barrier dam 3 , which is used to prevent overflow during the preparation of the first organic layer 122 .

[0141] As shown in Figures 7 and 9 , the barrier dam 3 is disposed on the side of the substrate 1 near the encapsulation layer 120 and is located in the wiring area C. The barrier dam 3 surrounds the display area A. Furthermore, the orthographic projection of the barrier dam 3 on the substrate 1 is located between the boundaries of the orthographic projections of the first organic layer 122 and the second inorganic layer 123 on the substrate 1. There can be multiple barrier dams 3, but two are shown in the figure as an example.

[0142] In some embodiments, referring to FIG. 9 , the structures of the anti-crack structure 2 and the barrier dam 3 may be the same, so that the anti-crack structure 2 and the barrier dam 3 may be formed simultaneously through the same process, thereby simplifying the process flow and reducing the preparation cost.

[0143] Exemplarily, the crack prevention structure 2 and the barrier dam 3 can be fabricated together with other film layers in the display substrate 110 to simplify the manufacturing process. For example, the crack prevention structure 2 and the barrier dam 3 can be fabricated simultaneously with at least one of the gate insulating layer GI, the gate conductive layer GT, the interlayer insulating layer ILD, the source / drain conductive layer SD, the anode layer AND, the pixel defining layer PDL, and the cathode layer CTD in the display substrate 110, which is not specifically limited in the present embodiment.

[0144] The embodiment of the present disclosure further provides a method for manufacturing a display panel 10 . Referring to FIG. 17 , the method includes steps S100 to S600 .

[0145] S100 : Referring to FIG. 20 , a display substrate 110 is prepared.

[0146] In the above steps, referring to Figures 7 and 20, the display substrate 110 has a display area A and a peripheral area B surrounding the display area A. The peripheral area B includes a pad area C and a trace area C. The pad area C is located on one side of the display area A. The trace area C surrounds a portion of the display area A and is connected to the pad area C.

[0147] As shown in FIG20 , the display substrate 110 includes a substrate 1 and a crack prevention structure 2 and a barrier dam 3 disposed on the substrate 1. The crack prevention structure 2 surrounds a portion of the display area A and terminates at the pad area C. The barrier dam 3 surrounds the display area A and is located between the crack prevention structure 2 and the display area A.

[0148] It should be noted that, in order to facilitate the display of the positional relationship of the boundaries of each film layer, the anti-cracking structure 2, the first inorganic layer 121 and the first insulating layer 131 are illustrated in Figure 20 as surrounding the display area A, which does not mean that the anti-cracking structure 2, the first inorganic layer 121 and the first insulating layer 131 surround the display area A. The anti-cracking structure 2, the blocking dam 3, the first inorganic layer 121 and the first insulating layer 131 can be specifically referred to above, and the embodiments of the present disclosure will not be elaborated here.

[0149] S200 : Referring to FIG. 20 , a first inorganic thin film 121 ′ is formed on the light-emitting side of the display substrate 110 .

[0150] 20 , the first inorganic film 121 ′ contacts the display substrate 110 , and the boundary of the first inorganic film 121 ′ is substantially flush with the boundary of the substrate 1 . In other words, the first inorganic film 121 ′ entirely covers the display substrate 110 .

[0151] The first inorganic thin film 121 ′ may be formed by a deposition process, for example, the first inorganic thin film 121 ′ may be formed on the display substrate 110 by any one of atomic layer deposition, physical vapor deposition, and chemical vapor deposition.

[0152] S300 : referring to FIG. 11 and FIG. 20 , a first metal layer 133 is formed on a side of the first inorganic thin film 121 ′ away from the display substrate 110 .

[0153] In the above steps, the first metal layer 133 can be formed, for example, by a photolithography process, that is, by masking, exposure, development, and etching processes.

[0154] It should be noted that the structure of the first metal layer 133 may be specifically described above, and will not be elaborated herein in detail in the embodiment of the present disclosure.

[0155] S400 : referring to FIG. 11 and FIG. 20 , a first insulating film 131 ′ is formed on a side of the first metal layer 133 away from the display substrate 110 .

[0156] In the above steps, as shown in FIG11 and FIG20 , the boundary of the first insulating film 131 ′ is substantially flush with the boundary of the substrate 1. In other words, the first insulating film 131 ′ covers the entire surface of the display substrate 110.

[0157] The first insulating film 131 ′ can be formed by a deposition process, for example, by atomic layer deposition, physical vapor deposition, or chemical vapor deposition, and formed on a side of the first metal layer 133 away from the display substrate 110 .

[0158] S500 : referring to FIG. 11 and FIG. 20 , the first insulating film 131 ′ and the first inorganic film 121 ′ are simultaneously etched to form a first insulating layer 131 and a first inorganic layer 121 .

[0159] In the above steps, the boundary of the orthographic projections of the first inorganic layer 121 and the first insulating layer 131 on the substrate 1 is located between the two opposite boundaries of the orthographic projections of the crack prevention structure 2 and the barrier dam 3 on the substrate 1. The remaining portion of the first insulating film 131' forms the first insulating layer 131, and the remaining portion of the first inorganic film 121' forms the first inorganic layer 121.

[0160] The synchronous etching may be performed using a dry etching process. For example, plasma gas is used to synchronously etch the first insulating film 131 ′ and the first inorganic film 121 ′. The plasma gas may include carbon tetrafluoride and / or chlorine.

[0161] Furthermore, in the process of S500 , the etching selectivity ratio of the first insulating film 131 ′ to the first inorganic film 121 ′ is greater than 1, so as to form the second overlapping hole H2 with a larger area on the opening side.

[0162] S600 : referring to FIG. 11 and FIG. 20 , a second metal layer 134 is formed on a side of the first insulating layer 131 away from the display substrate 110 .

[0163] In the above steps, the second metal layer 134 can be formed, for example, by a photolithography process, that is, by masking, exposure, development, and etching processes.

[0164] It should be noted that the structure of the second metal layer 134 may be specifically described above, and will not be elaborated herein in detail in the embodiment of the present disclosure.

[0165] As can be seen from the above, the first inorganic layer 121 can be patterned by etching simultaneously with the first insulating layer 131, thereby improving production efficiency. Furthermore, this etching process does not adversely affect the thickness of the edge of the first inorganic layer 121, thus avoiding the need to deposit the patterned first inorganic layer 121 using a first mask. This not only improves the uniformity of the thickness of the first inorganic layer 121 and alleviates the powdering phenomenon that occurs at the edge of the display panel 10 when it is illuminated, but also eliminates a mask layer (the first mask), thereby reducing costs.

[0166] In some embodiments, as shown in FIG18 , before S300 , the preparation method further includes S210 to S220 .

[0167] S210 : Referring to FIG. 20 , a first organic layer 122 is formed on a side of the first inorganic thin film 121 ′ away from the display substrate 110 .

[0168] In the above steps, the boundary of the orthographic projection of the first organic layer 122 on the display substrate 110 is located between the display area A and the inner boundary of the orthographic projection of the barrier dam 3 on the display substrate 110 .

[0169] The first organic layer 122 may be formed on a side of the first inorganic thin film 121 ′ away from the display substrate 110 by using an inkjet printing process.

[0170] S220 : Referring to FIG. 20 , a second inorganic layer 123 is formed on a side of the first organic layer 122 away from the display substrate 110 .

[0171] In the above steps, the boundary of the orthographic projection of the second inorganic layer 122 on the display substrate 110 is located between two opposite boundaries of the orthographic projection of the blocking dam 3 and the first inorganic layer 121 on the substrate 1 .

[0172] The third mask plate can be used as a mask to form the second inorganic layer 123 on the side of the first organic layer 122 away from the display substrate 110 through a deposition process. For example, the third mask plate can be used as a mask to form the second inorganic layer 123 on the side of the first organic layer 122 away from the display substrate 110 through any one of atomic layer deposition, physical vapor deposition, or chemical vapor deposition.

[0173] In some embodiments, as shown in FIG19 , before S300 , the preparation method further includes S230 .

[0174] S230 : Referring to FIG. 21 , a second insulating film 132 ′ is formed on a side of the first inorganic film 121 ′ away from the display substrate 110 .

[0175] In the above steps, as shown in FIG21 , the boundary of the second insulating film 132 ′ is substantially flush with the boundary of the substrate 1. In other words, the second insulating film 132 ′ covers the entire surface of the display substrate 110 .

[0176] The second insulating film 132 ′ can be formed by a deposition process, for example, by atomic layer deposition, physical vapor deposition, or chemical vapor deposition, and formed on the side of the first inorganic film 121 ′ away from the display substrate 110 .

[0177] On this basis, in the process of S500, the second insulating film 132' is also simultaneously etched to form the second insulating layer 132. The above-mentioned simultaneous etching process is consistent with the above-mentioned improvement and is not described in detail in this embodiment of the present disclosure. It should be noted that when the preparation method includes S210 and S220, S230 is after S220.

[0178] It should be noted that, in FIG21 , the anti-crack structure 2 and the first inorganic layer 121, the first insulating layer 131 and the second insulating layer 132 are schematically shown as surrounding the display area A, which does not mean that the anti-crack structure 2, the first inorganic layer 121 and the first insulating layer 131 surround the display area A. The anti-crack structure 2, the blocking dam 3, the first inorganic layer 121, the first insulating layer 131 and the second insulating layer 132, etc. can be specifically referred to above, and the embodiments of the present disclosure will not be elaborated here.

[0179] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in the present disclosure should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A display panel, comprising: A display substrate having a light-emitting side and a non-light-emitting side arranged opposite to each other; An encapsulation layer, disposed on the light-emitting side of the display substrate; The encapsulation layer includes at least one inorganic layer, the at least one inorganic layer includes a first inorganic layer, and the first inorganic layer is the inorganic layer closest to the display substrate among the at least one inorganic layer; A touch stack is arranged on a side of the packaging layer away from the display substrate; the touch stack includes at least one insulating layer; an edge portion of at least one insulating layer is in contact with an edge portion of the first inorganic layer, and an orthographic projection of a lower boundary of the edge portion of the insulating layer on the display substrate roughly coincides with an orthographic projection of an upper boundary of the edge portion of the first inorganic layer on the display substrate.

2. The display panel according to claim 1, wherein: The touch stack comprises: A first metal layer, in contact with the packaging layer; A first insulating layer, disposed on a side of the first metal layer away from the encapsulation layer; The edge portion of the first insulating layer contacts the edge portion of the first inorganic layer, and the orthographic projection of the lower boundary of the edge portion of the first insulating layer on the display substrate substantially coincides with the orthographic projection of the upper boundary of the edge portion of the first inorganic layer on the display substrate; The second metal layer is arranged on a side of the first insulating layer away from the packaging layer.

3. The display panel according to claim 2, wherein: One of the first metal layer and the second metal layer includes a plurality of first touch electrodes, a plurality of second touch electrodes, and a plurality of first connecting portions, and the other includes a plurality of second connecting portions; and two adjacent first touch electrodes are connected to the first connecting portions, and two adjacent second touch electrodes are connected to the second connecting portions; The first insulating layer is provided with a plurality of first overlapping holes, and the second connecting portion extends into the first overlapping holes to be connected with the second touch electrodes; the slope angle of the side wall of the first insulating layer at the first overlapping holes is 64° to 80°.

4. The display panel according to claim 2 or 3, wherein: The slope angle of the side wall of the edge portion of the first insulating layer is 50° to 65°, and the slope angle of the side wall of the edge portion of the first inorganic layer is 65° to 80°.

5. The display panel according to any one of claims 2 to 4, wherein: The edge portions of the first insulating layer and the first inorganic layer are provided with a second overlapping hole penetrating through the first insulating layer and the first inorganic layer; The second metal layer includes a transition portion, the display substrate includes a transition line, the transition portion extends into the second overlapping hole and is connected to the transition line, the edge portion of the first insulating layer has a slope angle of 50° to 65° on the side wall of the second overlapping hole, and the edge portion of the first inorganic layer has a slope angle of 65° to 80° on the side wall of the second overlapping hole.

6. The display panel according to any one of claims 1 to 5, comprising a display area and a peripheral area surrounding the display area, the peripheral area comprising a wiring area and a pad area, the pad area being located on one side of the display area; the wiring area surrounds a portion of the display area and is connected to the pad area; the first inorganic layer covers the display area and extends to the peripheral area; Along the display area pointing to the pad area, the pad area includes a transfer area, a bending area and a circuit board binding area in sequence, the transfer area is provided with a second overlap hole, and the circuit board binding area is provided with a binding pad; the first insulating layer and the first inorganic layer expose the first area and cover the second area; the first area includes the area of ​​the second overlap hole, the area of ​​the binding pad and the bending area; the second area is the area of ​​the pad area excluding the first area.

7. The display panel according to claim 6, wherein: The encapsulation layer further comprises: a second inorganic layer, located on a side of the first inorganic layer away from the display substrate; a boundary of an orthographic projection of the second inorganic layer on the display substrate is located between the display area and a boundary of an orthographic projection of the first inorganic layer on the display substrate; an edge portion of the first insulating layer is also in contact with a side wall of the second inorganic layer; The first organic layer is located between the first inorganic layer and the second inorganic layer; and the boundary of the orthographic projection of the first organic layer on the display substrate is located between the display area and the boundary of the orthographic projection of the second inorganic layer on the display substrate.

8. The display panel according to claim 7, wherein: The display substrate comprises: substrate; An anti-crack structure is arranged on a side of the substrate close to the encapsulation layer and located in the routing area; the anti-crack structure surrounds a portion of the display area and ends at the pad area; and the orthographic projection of the anti-crack structure on the substrate is located outside the orthographic projection of the first inorganic layer on the substrate; Among them, the minimum distance between the orthographic projection of the anti-crack structure on the substrate and the orthographic projection of the first inorganic layer on the substrate is a first distance, and the minimum distance between the orthographic projection of the anti-crack structure on the substrate and the orthographic projection of the second inorganic layer on the substrate is a second distance; the first distance is greater than the second distance.

9. The display panel according to claim 8, wherein: The distance between the orthographic projection of the crack prevention structure on the substrate and the orthographic projection of the first inorganic layer on the substrate is 20 μm to 50 μm; And / or, a distance between an orthographic projection of the crack prevention structure on the substrate and an orthographic projection of the second inorganic layer on the substrate is 50 μm to 100 μm.

10. The display panel according to any one of claims 7 to 9, wherein: The display substrate further comprises: substrate; A blocking dam is arranged on a side of the substrate close to the encapsulation layer and located in the routing area; the blocking dam surrounds the display area; and the orthographic projection of the blocking dam on the substrate is located between two boundaries of the orthographic projections of the first organic layer and the second inorganic layer on the substrate.

11. The display panel according to any one of claims 6 to 10, wherein: In the wiring area, a distance between a boundary of an orthographic projection of the first inorganic layer on the display substrate and a boundary of an orthographic projection of the second inorganic layer on the display substrate is 0 μm to 30 μm.

12. The display panel according to claim 1, wherein: The touch stack comprises: a second insulating layer, in contact with the encapsulation layer; The edge portion of the second insulating layer is adjacent to the edge portion of the first inorganic layer. The edge portions of the second insulating layer and the second inorganic layer are in contact, and the orthographic projection of the lower boundary of the edge portion of the second insulating layer on the display substrate substantially coincides with the orthographic projection of the upper boundary of the edge portion of the first inorganic layer on the display substrate; A first metal layer is disposed on a side of the second insulating layer away from the encapsulation layer; a first insulating layer, arranged on a side of the first metal layer away from the encapsulation layer; an orthographic projection of a lower boundary of an edge portion of the first insulating layer on the display substrate substantially coincides with an orthographic projection of an upper boundary of an edge portion of the second insulating layer on the display substrate; The second metal layer is arranged on a side of the first insulating layer away from the packaging layer.

13. The display panel according to any one of claims 1 to 12, wherein: The materials of the first inorganic layer and the insulating layer include silicide, and the material of one of the first inorganic layer and the insulating layer includes silicon oxide, and the material of the other does not include silicon oxide.

14. A display module, comprising: The display panel according to any one of claims 1 to 13; A circuit board is connected to the display panel.

15. A display device, comprising: case; The display module as claimed in claim 14, wherein the display module is disposed in the housing.

16. A method for preparing a display panel, comprising: preparing a display substrate; The display substrate has a display area and a peripheral area surrounding the display area, the peripheral area includes a pad area and a wiring area, the pad area is located on one side of the display area; the wiring area surrounds part of the display area and is connected to the pad area; the display substrate includes a substrate and an anti-crack structure and a blocking dam arranged on the substrate; the anti-crack structure surrounds part of the display area and ends at the pad area; The barrier dam surrounds the display area and is located between the anti-crack structure and the display area; A first inorganic thin film is formed on the light-emitting side of the display substrate; the first inorganic thin film is in contact with the display substrate, and a boundary of the first inorganic thin film is substantially flush with a boundary of the substrate; forming a first metal layer on a side of the first inorganic thin film away from the display substrate; forming a first insulating film on a side of the first metal layer away from the display substrate; a boundary of the first insulating film is substantially flush with a boundary of the substrate; The first insulating film and the first inorganic film are simultaneously etched to form a first insulating layer and a first inorganic layer; the boundary of the range of the orthographic projection of the first inorganic layer and the first insulating layer on the substrate is located between two opposite boundaries of the orthographic projection of the crack prevention structure and the blocking dam on the substrate; A second metal layer is formed on a side of the first insulating layer away from the display substrate.

17. The method for preparing a display panel according to claim 16, wherein: The synchronous etching adopts a dry etching process.

18. The method for preparing a display panel according to claim 17, wherein: In a process of synchronously etching the first insulating film and the first inorganic film to form a first inorganic layer and a first insulating layer, an etching selectivity ratio of the first insulating film to the first inorganic film is greater than 1.

19. The method for preparing a display panel according to any one of claims 16 to 18, wherein: Before forming the first metal layer on the side of the first inorganic thin film away from the display substrate, the method further comprises: A second insulating film is formed on a side of the first inorganic film away from the display substrate; a boundary of the second insulating film is substantially flush with a boundary of the substrate; In the process of synchronously etching the first insulating film and the first inorganic film to form the first inorganic layer and the first insulating layer, the second insulating film is also synchronously etched to form the second insulating layer.

20. The method for preparing a display panel according to any one of claims 16 to 19, wherein: Before forming the first metal layer on the side of the first inorganic thin film away from the display substrate, the method further comprises: forming a first organic layer on a side of the first inorganic thin film away from the display substrate; a boundary of an orthographic projection of the first organic layer on the display substrate is located between the display area and an inner boundary of an orthographic projection of the blocking dam on the display substrate; A second inorganic layer is formed on a side of the first organic layer away from the display substrate; a boundary of an orthographic projection of the second inorganic layer on the display substrate is located between two opposite boundaries of the blocking dam and the orthographic projection of the first inorganic layer on the substrate.

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