Voltage-controlled three-terminal magnon transistor, and control method therefor and preparation method therefor

Abstract

The present invention provides a voltage-controlled three-terminal magnon transistor, comprising a ferroelectric layer, a magnetic layer, a generation terminal, a control terminal, a detection terminal, and a bottom electrode, wherein the generation terminal generates magnons in the magnetic layer when the current is introduced; the detection terminal is made of a heavy metal material, and can convert the magnons in the magnetic layer into a charge flow; and when a voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, the non-volatile electric polarization and the non-volatile strain state of the ferroelectric layer are changed, so that the transmission capability of the magnons in the magnetic layer is affected by the magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer, and a voltage signal of the detection terminal shows a regular loop change behavior as the voltage pulse changes. Furthermore, also disclosed in the present invention are a control method and preparation method for the device. The three-terminal magnon transistor disclosed in the present invention can work in a wide temperature range including room temperature, has a high on-off ratio and is non-volatile.

Description

A voltage-controlled three-terminal magneton transistor and its control and preparation method Technical Field

[0001] The present invention belongs to the field of microelectronic information devices, and in particular relates to a voltage-controlled three-terminal magneton transistor and a control method and a preparation method thereof. Background Art

[0002] The invention of the transistor is a milestone in the development of modern electronic technology. Since the 1960s, the density of transistors in integrated circuits has followed Moore's Law, doubling approximately every two years. However, with the increase in integration density and operating speed, electronic devices face serious power consumption issues, which significantly limit the future development of integrated circuits. Therefore, the further development of transistors cannot rely solely on the charge properties of electrons, and alternative solutions must be sought. Magnons are collective excitations of magnetic moments that can carry spin information without the movement of charge. This process does not cause additional Joule heating issues. Therefore, magnons are highly anticipated information carriers in the post-Moore era. Given the current obstacles facing transistors, it is extremely important to design and manufacture low-power magnon transistors.

[0003] As shown in Figure 1, a three-terminal magnon transistor generally consists of four parts: a magnon generating terminal 1 (S), a control terminal 2 (G), a detection terminal 3 (D), and a medium 4 for transmitting magnons (i.e., a magnon transmission medium). Among the existing technologies, the one represented by Andrii V. Chumak et al. (Magnon transistor for all-magnon data processing, Nature Communications 5, 4700, 2014) requires a microwave source to generate microwave current and inject it into the generating terminal. A vector network analyzer detects magnons at the detection terminal. The control method is to use microwave current to generate a large number of magnons locally. The transmission of magnons from the generating terminal to the detection terminal is controlled by regulating the scattering between magnons. On the one hand, the microwave source and the vector network analyzer are both expensive. On the other hand, applying microwave current to the control terminal to regulate magnon transmission introduces additional Joule heat and is volatile. In a technology represented by L.J. Cornelissen et al. (Spin-Current-Controlled Modulation of the Magnon Spin Conductance in a Three-Terminal Magnon Transistor, Physical Review Letters 120, 097702, 2018), a low-frequency alternating current is passed through the generation end to generate magnons, and the detection end detects magnon information through single- and double-frequency signals. The control method is direct current. The large direct current passed through the control end to regulate magnon transmission also causes additional Joule heating. The operating temperature is below room temperature, at 250 Kelvin, and the on-off ratio is low (1.6% / mA). It is also volatile. The technology represented by KSDas et al. (Modulation of magnon spin transport in a magnetic gate transistor, Physical Review B 101, 054436, 2020) has similar magnon generation and detection ends to those of LJCornelissen et al., with an iron-nickel alloy control end and a magnetic field applied perpendicular to the strip direction to change the direction of the magnetic moment of the iron-nickel alloy relative to the magnetic moment of the transmission medium, yttrium iron garnet, thereby affecting the transmission of magnons. The switching ratio is not high (18%) and it is also volatile.In the technology represented by Guangyi Chen et al. (Electrically switchable van der Waals magnon valves, Nature Communications, 12, 6279, 2021), the transmission medium of the device is two-dimensional MnPS3, and the control method is DC current. A large DC current is passed through the control end to affect the transmission of magnons, which will also introduce additional Joule heat and needs to work at extremely low temperatures (2 Kelvin).

[0004] As can be seen, existing three-terminal magnon transistors are primarily controlled using microwave current, direct current, and magnetic fields. These control methods all generate additional Joule heating, resulting in high power consumption. Furthermore, some current devices require operating temperatures below room temperature (250 Kelvin) or even extremely low temperatures (2 Kelvin), and are all volatile.

[0005] Summary of the Invention

[0006] To address the above issues, the present invention provides a voltage-controlled three-terminal magnetic transistor that can operate over a wide temperature range, including room temperature (approximately 300 Kelvin), has a high on / off ratio, and is nonvolatile. Furthermore, a control method and a method for preparing the voltage-controlled three-terminal magnetic transistor are provided.

[0007] The first aspect of the present invention provides a voltage-controlled three-terminal magnon transistor, comprising: a ferroelectric layer; a magnetic layer formed on a first surface of the ferroelectric layer; a generating end, a control end, and a detecting end formed on the magnetic layer; a bottom electrode formed on a second surface of the ferroelectric layer, the second surface and the first surface being arranged opposite to each other; the generating end is constructed so that, after current is passed through, magnons are generated in the magnetic layer by a thermal effect; the detecting end is constructed so that, made of a heavy metal material, magnons in the magnetic layer can be converted into a charge flow by utilizing its strong spin-orbit coupling effect; the ferroelectric layer is constructed so that, when a voltage pulse applied between the control end and the bottom electrode exceeds a critical value, its non-volatile electric polarization and non-volatile strain state change, thereby affecting the transmission capacity of magnons in the magnetic layer through the magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer, and at the same time, the voltage signal at the detecting end exhibits a regular loop change behavior as the voltage pulse changes.

[0008] As an optional solution, the generating end is further constructed as follows: made of heavy metal material; after current is passed through, a spin current is generated by using a strong spin-orbit coupling effect, and the spin current is converted into magnons after being injected into the magnetic layer.

[0009] As an optional solution, the control end is constructed by: making of metal material.

[0010] As an optional solution, the ferroelectric layer is a ferroelectric substrate, a ferroelectric film or a ferroelectric sheet; the material of the ferroelectric layer is any one of lead magnesium niobate-lead titanate, lead zirconate titanate, barium titanate, potassium dihydrogen phosphate, lead titanate, and lead tungstate, preferably lead magnesium niobate-lead titanate.

[0011] As an optional solution, the ferroelectric layer is a ferroelectric film or a ferroelectric sheet with a thickness of 1 nm to 2 mm.

[0012] As an optional solution, the magnetic layer is made of a magnetic insulator material; the magnetic insulator material includes yttrium iron garnet ferrite, ferric oxide, and chromium oxide, preferably yttrium iron garnet ferrite.

[0013] As an optional solution, the thickness of the magnetic layer is 1 nanometer to 100 micrometers, preferably 100±50 nanometers.

[0014] As an optional solution, the bottom electrode is constructed as follows: it is located directly below the control end and can cover the control end, and is made of a conductive material, and the conductive material includes at least one of platinum, gold, palladium, tungsten, tantalum, silver, copper, aluminum, titanium, silicon, gallium arsenide, gallium nitride, and titanium dioxide.

[0015] The second aspect of the present invention provides a control method for a three-terminal magnetic transistor, based on the three-terminal magnetic transistor described in the first aspect or any one of its optional solutions; comprising: passing a direct current or a low-frequency alternating current through the generating end; applying -V between the control end and the bottom electrode; g1 To V g1 The voltage pulse V g , when the voltage pulse V g Greater than the positive critical value V t When V is applied between the control terminal and the bottom electrode, the transmission capability of the magnetic particles in the magnetic insulating layer becomes stronger, and the voltage signal V at the detection end becomes larger. g1 To -V g1 The voltage pulse V g , when V g Less than the negative critical value -V t When , the transmission ability of the magnetons becomes weaker, and the voltage signal V at the detection end becomes smaller, thereby achieving a regular loop change behavior of the voltage signal at the detection end as the voltage pulse changes.

[0016] The third aspect of the present invention provides a preparation method for preparing the three-terminal magnetic transistor described in the first aspect or any one of its optional schemes, including: providing a ferroelectric substrate or making a ferroelectric thin film as a ferroelectric layer; growing a magnetic layer film on the first surface of the ferroelectric layer using a thin film growth technology; using ultraviolet lithography, electron beam exposure technology or etching technology and coating technology to make a generating end, a control end and a detection end arranged side by side in sequence on the magnetic insulator layer film; and finally growing a bottom electrode on the second surface of the ferroelectric layer.

[0017] The present invention has the following beneficial effects:

[0018] (1) The voltage-controlled three-terminal magnon transistor disclosed in the present invention adopts a unique structural design. The metal material, magnetic layer and ferroelectric layer contained in the device can operate in a wide temperature range including room temperature, and has a wider range of use. It is not limited to the need for a low temperature environment or an extremely low temperature environment to operate.

[0019] (2) The voltage-controlled three-terminal magnon transistor disclosed in the present invention is controlled by voltage. The voltage applied between the magnetic layer and the ferroelectric layer will not cause the generation of current, so no additional Joule heat will be generated. It is also more energy-efficient and can solve the problem of additional power consumption caused by the use of microwave current, direct current, or external magnetic field as the control method.

[0020] (3) The present invention utilizes the magnetoelectric coupling effect of the ferroelectric layer and the magnetic layer. When the applied voltage exceeds a critical value, the non-volatile electric polarization and non-volatile strain state of the ferroelectric layer will change, further affecting the physical properties of the magnetic layer (such as magnetic anisotropy, magnetic exchange constant, damping coefficient, attenuation length, etc.) through the magnetoelectric coupling effect, thereby affecting the transmission ability of magnons in the magnetic layer, and ultimately affecting the intensity of magnons reaching the detection end. Accordingly, the greater the efficiency of voltage regulation of the properties of the magnetic layer, the greater the corresponding change in the intensity of magnons reaching the detection end, that is, a large switching ratio is achieved. Since the regulation of the electric polarization and strain of the ferroelectric layer is non-volatile, the state of the electric polarization and strain will be maintained after the applied voltage is removed, thereby achieving non-volatile operation of the magnon transmission ability. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a schematic structural diagram of a three-terminal magnon transistor in the prior art, wherein: (a) is a top view, and (b) is a cross-sectional view; the annotations in Figure 1 are: 1-magnon generation end (S), 2-magnon control end (G), 3-magnon detection end (D), 4-magnon transmission medium.

[0022] FIG2 is a schematic structural diagram of a three-terminal magneton transistor in an embodiment;

[0023] FIG3 is a schematic diagram of the preparation process of a three-terminal magneton transistor in an embodiment;

[0024] FIG4 is a schematic diagram of the operation of a three-terminal magnetic transistor in an embodiment, wherein: (a) is a top view, and (b) is a side view;

[0025] FIG5 is a schematic diagram of a curve showing the voltage signal detected by a three-terminal magnetic transistor as a function of a voltage pulse in an embodiment;

[0026] FIG6 is a curve experimental data showing the voltage signal detected by the three-terminal magnetic transistor as a function of the voltage pulse in the embodiment.

[0027] Explanation of the annotations in Figures 2, 3, and 4: 1- ferroelectric layer, 2- magnetic layer, 3- generating end, 4- control end, 5- detecting end, 6- bottom electrode, 7- current source for applying current, 8- voltmeter for detecting voltage signal, 9- voltage source for applying voltage pulse. DETAILED DESCRIPTION

[0028] The technical solutions of the present invention will be clearly and completely described below in conjunction with specific embodiments and Figures 2 to 6. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0029] As shown in FIG2 , Example 1 provides a voltage-controlled three-terminal magnon transistor, which is mainly composed of a ferroelectric layer 1, a magnetic layer 2, a generating terminal 3, a control terminal 4, a detecting terminal 5 and a bottom electrode 6. The ferroelectric layer 1 is a ferroelectric substrate, a ferroelectric film or a ferroelectric sheet. The electric polarization and strain state of the ferroelectric layer 1 can be changed by applying a voltage, thereby regulating the efficiency of magnon transmission in the magnetic insulator layer through the magnetoelectric coupling effect of the ferroelectric ferromagnetic system. The materials that can be used for the ferroelectric layer 1 include lead magnesium niobate-lead titanate (PMN x -PT 1-x ), lead zirconate titanate (PZT), barium titanate (BaTiO3), potassium dihydrogen phosphate (KH2PO4), lead titanate (PbTiO3), lead tungstate (PbZrO3), etc. Lead magnesium niobate-lead titanate is preferred, as it has a wide operating temperature range, a strong piezoelectric effect, and mature preparation technology. The device is insensitive to the thickness of the ferroelectric layer 1. Millimeter-thick ferroelectric substrates can be purchased directly through commercial means, or ferroelectric films or ferroelectric sheets with a thickness of 1 nanometer to 2 millimeters can be grown on a suitable substrate (such as a silicon wafer). Compared to ferroelectric substrates, the advantage of using ferroelectric films is that only a very small voltage is required to achieve the same electric field strength.

[0030] The magnetic layer 2 is a magnetic transmission medium. The magnetic transmission medium can be obtained by growing a magnetic thin film on the ferroelectric layer 1 using a thin film growth device. Specifically, a magnetic material with a magnetic ordering temperature higher than room temperature, a small damping coefficient, and a long magnetic transmission distance can be used to prepare the magnetic film. Considering that the damping factor of a magnetic insulator is generally lower than that of a magnetic metal, and the transmission distance of a magnetic ton is generally greater than that of a magnetic metal, it is preferred to prepare the magnetic layer 2 using a magnetic insulator material, for example, yttrium iron garnet ferrite (Y3Fe5O 12 YIG, also known as ferrous oxide (YIG), ferric oxide (Fe2O3), and chromium oxide (Cr2O3), are materials of choice among magnetic insulators. YIG boasts mature preparation technology, a wide operating temperature range, a very low damping factor, and long magnon transmission distances. The thickness of magnetic insulator films typically ranges from 1 nanometer to 100 microns, preferably 100±50 nanometers. Within this range, the properties of magnetic films approach those of bulk materials, with a low damping coefficient, long magnon transmission distances, and minimal attenuation of the magnetoelectric coupling effect.

[0031] The generating end 3, the control end 4, and the detection end 5 are all microstrips formed on the surface of the magnetic layer 2. The generating end 3 and the control end 4 can be made of conductive materials, for example, metal conductive materials such as platinum, gold, palladium, tungsten, tantalum, silver, copper, aluminum, titanium, titanium dioxide, or non-metallic conductive materials such as silicon, gallium arsenide, and gallium nitride. When current is applied to the generating end 3, magnons are generated in the magnetic layer 2 through thermal effects (for example, the spin Seebeck effect). The detection end 5 is made of heavy metal materials, such as platinum, gold, palladium, tungsten, tantalum, etc., for detecting magnons. As a preferred embodiment, the generating end 3 is made of heavy metal, which can simultaneously utilize the thermal effect caused by heating to generate magnons in the magnetic layer 2, and utilize its strong spin-orbit coupling to generate spin currents, which are converted into magnons in the insulator layer 2. Furthermore, considering the simplicity of process implementation, the generating end 3, the control end 4, and the detection end 5 can be made of the same heavy metal material, so that only one exposure and coating process is required. The size and spacing of the three microstrips can be designed in a conventional manner. For example, the strip length is 10 microns, the width is 0.5 microns, and the strip spacing is 0.5 microns. In actual applications, the size and spacing of the microstrips can be further reduced as needed. When reducing the size, there is no need to do it proportionally according to the above example.

[0032] Bottom electrode 6 is formed on the side of ferroelectric layer 1 opposite magnetic layer 2. Bottom electrode 6, serving as an electrode for applying voltage, can be made of any conductive material. It can be a conductive metal such as platinum, gold, palladium, tungsten, tantalum, silver, copper, aluminum, titanium, or a semiconductor material such as silicon, gallium arsenide, gallium nitride, or titanium dioxide. Bottom electrode 6 is preferably located directly below control terminal 4 and has a size similar to that of control terminal 4. Preferably, bottom electrode 6 is positioned directly opposite control terminal 4 and covers control terminal 4.

[0033] The operating principle of the three-terminal magnon transistor described in Example 1 is as shown in Figure 3(a). A current source 7 is used to pass a direct current (or low-frequency alternating current) I into the generating terminal 3. The generating terminal 3 is made of a conductive material. Spin current can be injected into the magnetic layer 2 in two ways: 1) The current in the generating terminal 3 causes the magnetic layer 2 to heat up, establishing a temperature gradient. Through the thermal effect, magnons are generated in the magnetic layer. The polarization direction of these magnons can be adjusted by the in-plane magnetic field μ0H. 2) If the generating terminal 3 is made of a heavy metal material, its strong spin-orbit coupling can also be used to directly generate spin currents from the charge flow, which are converted into magnons in the magnetic layer 2. The polarization direction of these magnons is controlled by the direction of the charge flow in the generating terminal 3. The magnons are transmitted to the right in the magnetic layer 2 and reach the detection terminal 5. The detection terminal 5 made of heavy metal material uses its strong spin-orbit coupling to convert the magnons into charge flow, and the voltage signal V at the detection terminal 5 can be obtained using a voltmeter 8 (or a lock-in amplifier).

[0034] As shown in Figure 3(b), based on the three-terminal magnon transistor shown in Figure 3(a), when the electric field strength generated by the applied voltage in the ferroelectric layer exceeds the critical value, the non-volatile electric polarization and non-volatile strain state of the ferroelectric layer will change. Among them, the critical electric field strength is an intrinsic property of the ferroelectric material, and its numerical value mainly depends on the choice of material. Since the electric field is equal to the voltage divided by the distance between the control terminal 4 and the bottom electrode 6, the critical value of the voltage is also related to the thickness of the ferroelectric layer and the magnetic transmission layer. For the same device, since the material and thickness are fixed values, the voltage strength is linearly related to the voltage. That is to say, a voltage pulse V is applied between the control terminal 4 and the bottom electrode 6. g , when V g When the critical voltage is exceeded (i.e., the absolute value is greater than the absolute value of the critical voltage), the electric polarization and strain of the ferroelectric layer 1 will change, thereby affecting the magnon transmission capability of the magnetic layer 2 through the magnetoelectric coupling effect between the ferroelectric layer 1 and the magnetic layer 2. Because the changes in the electric polarization and strain in the ferroelectric layer 1 are non-volatile, the electric polarization and strain state of the ferroelectric layer 1 can be maintained even after the voltage pulse is removed, thereby achieving non-volatile regulation of the magnon transmission capability of the magnetic layer 2.

[0035] Specifically, -V is applied between the control terminal 4 and the bottom electrode 6. g1 To V g1 The voltage pulse width can be selected between 1 nanosecond and 10 seconds. There is no limit on the pulse waveform, which can be step-shaped, oblique line, ladder-shaped, etc. When the voltage is greater than the positive critical value V t When the electric polarization and strain in the ferroelectric layer 1 change, the magneton transmission ability in the magnetic layer 2 becomes stronger through the magnetoelectric coupling effect. Experimentally, it is observed that the voltage signal V at the detection end 5 becomes larger; when V is applied g1 To -V g1When the voltage is lower than the negative critical value -V t When the voltage pulse V g The changes in V and V g The dependency relationship is shown in Figure 5.

[0036] As shown in FIG6 , in one embodiment, voltage pulses of varying values, ranging from negative 200 volts to positive 200 volts and then to negative 200 volts, can be applied to a 0.5 mm thick lead magnesium niobate-lead titanate (ferroelectric layer 1) and a 100 nm thick yttrium iron garnet ferrite (magnetic layer 2). The pulse width is 10 seconds, and the pulse waveform is a ramp linear. The voltage signal actually measured by the detection terminal 5 shows significant changes in the voltage signal V at positive 150 volts and negative 100 volts, corresponding to changes in the electrical polarization and strain state of the lead magnesium niobate-lead titanate, thereby affecting the transmission capability of magnetons in the yttrium iron garnet ferrite.

[0037] In conjunction with FIG4 , Example 2 discloses a method for manufacturing a device for manufacturing the three-terminal magnetic transistor described in Example 1. The method mainly comprises the following steps:

[0038] Step 1: Using a commercially available 0.5 mm thick lead magnesium niobate-lead titanate single crystal substrate as a carrier of the device, thereby obtaining a ferroelectric layer 1;

[0039] Step 2: growing a magnetic layer thin film on the front surface of the ferroelectric layer 1 using a thin film growth technique, for example, growing yttrium iron garnet ferrite with a thickness of 100 nanometers;

[0040] Step 3: Using ultraviolet lithography, electron beam exposure technology, or etching technology and coating technology, three nanometer-thick metal strips are formed on the magnetic layer film, for example, platinum strips with a length of 10 microns, a width of 0.5 microns, a strip spacing of 0.5 microns, and a thickness of 5 nanometers;

[0041] Step 4: On the back side of the ferroelectric layer 1, a bottom electrode 6 is grown opposite to the control terminal 4. For example, gold with a thickness of 100 nanometers is grown as the bottom electrode 6, thereby forming the target three-terminal magneton transistor.

[0042] Finally, it should be noted that although examples of the present invention have been presented and described as much as possible, those skilled in the art can still refer to the aforementioned examples to modify and improve the present invention, which should all be included in the scope of protection of the present invention.

Claims

1. A voltage-controlled three-terminal magnetic transistor, characterized in that: include: ferroelectric layer; a magnetic layer formed on a first surface of the ferroelectric layer; A generating end, a controlling end and a detecting end are formed on the magnetic layer, wherein the detecting end is made of heavy metal material; A bottom electrode is formed on the second surface of the ferroelectric layer, wherein the second surface is arranged opposite to the first surface.

2. The three-terminal magnetic transistor according to claim 1, characterized in that: The generating end is also configured to: generate magnetic particles in the magnetic layer through thermal effect after current is passed through the magnetic layer; The detection end is also constructed to: utilize its strong spin-orbit coupling to convert the magnons in the magnetic layer into charge flow; The ferroelectric layer is also constructed such that when a voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, its nonvolatile electric polarization and nonvolatile strain state change, thereby affecting the transmission capacity of the magnetic ions in the magnetic layer through the magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer; The detection end is also constructed so that the detected voltage signal can show regular loop change behavior along with the change of voltage pulse.

3. The three-terminal magnetic transistor according to claim 1, characterized in that: The generating end is made of heavy metal material.

4. The three-terminal magnetic transistor according to claim 3, characterized in that: The heavy metal material is any one of platinum, gold, palladium, tungsten and tantalum.

5. The three-terminal magnetic transistor according to claim 3, characterized in that: The generating end is also constructed to generate a spin current by using a strong spin-orbit coupling effect after a current is passed through it, and the spin current is converted into magnons after being injected into the magnetic layer.

6. The three-terminal magnetic transistor according to claim 3, characterized in that: The control end is constructed by selecting heavy metal materials.

7. The three-terminal magnetic transistor according to any one of claims 1 to 6, characterized in that: The ferroelectric layer is a ferroelectric substrate, a ferroelectric film or a ferroelectric sheet; the material of the ferroelectric layer is any one of lead magnesium niobate-lead titanate, lead zirconate titanate, barium titanate, potassium dihydrogen phosphate, lead titanate and lead tungstate.

8. The three-terminal magnetic transistor according to claim 7, characterized in that: The ferroelectric layer is a ferroelectric film or a ferroelectric sheet with a thickness of 1 nanometer to 2 millimeters.

9. The three-terminal magnetic transistor according to claim 7, characterized in that: The ferroelectric layer is lead magnesium niobate-lead titanate.

10. The three-terminal magnetic transistor according to any one of claims 1 to 6, characterized in that: The magnetic layer is made of magnetic insulator materials; the magnetic insulator materials include yttrium iron garnet ferrite, iron oxide and chromium oxide.

11. The three-terminal magnetic transistor according to claim 10, characterized in that: The material of the magnetic layer is yttrium iron garnet ferrite.

12. The three-terminal magnetic transistor according to claim 10, characterized in that: The thickness of the magnetic layer is 1 nanometer to 100 micrometers.

13. The three-terminal magnetic transistor according to claim 12, characterized in that: The thickness of the magnetic layer is 100±50 nanometers.

14. The three-terminal magnetic transistor according to any one of claims 1 to 6, characterized in that: The bottom electrode is constructed to be located directly below the control terminal and to cover the control terminal, and is made of conductive material.

15. The three-terminal magnetic transistor according to claim 14, characterized in that: The conductive material includes at least one of platinum, gold, palladium, tungsten, tantalum, silver, copper, aluminum, titanium, silicon, gallium arsenide, gallium nitride, and titanium dioxide.

16. A control method for a three-terminal magnetic transistor, characterized in that: A voltage-controlled three-terminal magnetic transistor according to any one of claims 1 to 15; comprising: A direct current or a low-frequency alternating current is passed through the generating end; Apply -V between the control terminal and the bottom electrode g1 To V g1 The voltage pulse V g , when the voltage pulse V g Greater than the positive critical value V t When , the transmission capacity of the magnetic particles in the magnetic insulating layer becomes stronger, and the voltage signal V at the detection end becomes larger; V is applied between the control end and the bottom electrode. g1 To -V g1 The voltage pulse V g , when V g Less than the negative threshold -V t When , the transmission capacity of the magnetons becomes weaker, and the voltage signal V at the detection end becomes smaller, thereby achieving a regular loop change behavior of the voltage signal at the detection end as the voltage pulse changes.

17. A preparation method, characterized in that: A method for preparing a voltage-controlled three-terminal magnetic transistor as claimed in any one of claims 1 to 15, comprising: Providing a ferroelectric substrate or making a ferroelectric thin film as a ferroelectric layer; Growing a magnetic layer thin film on the first surface of the ferroelectric layer using a thin film growth technique; Using ultraviolet lithography, electron beam exposure technology or etching technology and coating technology to make a generating end, a control end and a detecting end arranged in sequence on the magnetic insulator layer film; Finally, a bottom electrode is grown on the second surface of the ferroelectric layer.

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