Radio frequency plasma apparatus and vacuum system
High-density plasma is generated by combining a radio frequency plasma device with an electromagnetic field and a magnetic field confinement mechanism, which solves the safety and low efficiency problems of traditional plasma sources and achieves low-pressure and high-efficiency production and reduced maintenance costs.
Patent Information
- Application Number
- PCT/CN2024/119068
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-06-13
- Filing Date
- 2024-09-14
- Publication Date
- 2025-10-02
AI Technical Summary
Traditional plasma sources use high-voltage direct current, which is highly dangerous, has low gas ionization efficiency, long production time and high maintenance costs.
A radio frequency plasma device is used, and an electromagnetic field generator is used to generate an electromagnetic field and a magnetic field constraint mechanism is used to generate a constrained magnetic field. Plasma is generated in the plasma generating chamber through coupling, which improves the ionization efficiency of gas molecules. High melting point materials and improved sealing structures are used to ensure safety and a vacuum environment.
Generate high-density plasma under low-pressure conditions, improve production efficiency, reduce safety risks, reduce maintenance costs, and maintain the stability of the vacuum environment.
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Figure CN2024119068_02102025_PF_FP_ABST
Abstract
Description
Radio frequency plasma device and vacuum system Technical Field
[0001] The present disclosure relates to the technical field of vacuum equipment, and in particular to a radio frequency plasma device and a vacuum system. Background Art
[0002] Plasma technology is currently widely used in various fields. For example, in semiconductor integrated circuit manufacturing, the growth of thin films of various materials and the etching of circuits are commonly accomplished using plasma technology. Another example is the growth of titanium nanotubes and the development of micro-electromechanical systems. Plasma research and applications are inseparable from plasma generating equipment, such as plasma sources.
[0003] Traditional plasma sources require high voltage during production and experimentation, which has a high risk factor and poor safety. In addition, traditional plasma sources use high-voltage direct current, which has low gas ionization efficiency, long production time, and high production and maintenance costs.
[0004] Summary of the Invention
[0005] The present disclosure provides a radio frequency plasma device, comprising: an electromagnetic field generator for generating an electromagnetic field when energized; a magnetic field confinement mechanism for generating a confined magnetic field; and a plasma generating chamber coupled to the electromagnetic field generator and the magnetic field confinement mechanism, for accommodating a working gas and plasma generated by the working gas under the action of the electromagnetic field and the confined magnetic field.
[0006] The present disclosure provides a vacuum system, comprising: a vacuum chamber; and a radio frequency plasma device as described in any one of the embodiments of the present disclosure, wherein the radio frequency plasma device is at least partially disposed in the vacuum chamber and is configured to emit plasma into the vacuum chamber. BRIEF DESCRIPTION OF THE DRAWINGS
[0007] In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only one embodiment of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0008] FIG1A shows a schematic structural diagram of a radio frequency plasma device according to some embodiments of the present disclosure;
[0009] FIG1B shows a cross-sectional view taken along line AA of FIG1A ;
[0010] FIG2A shows a schematic structural diagram of a magnetic field confinement mechanism according to some embodiments of the present disclosure;
[0011] FIG2B shows a cross-sectional view taken along line BB of FIG2A ;
[0012] FIG3A is a schematic diagram showing a partial structure of a radio frequency plasma device according to some embodiments of the present disclosure;
[0013] FIG3B shows a cross-sectional view taken along line CC of FIG3A ;
[0014] FIG4A shows a partial structural schematic diagram of an electromagnetic field generator according to some embodiments of the present disclosure;
[0015] FIG4B illustrates a partial cross-sectional view of an electromagnetic field generator according to some embodiments of the present disclosure;
[0016] FIG4C shows an enlarged view of a portion of the structure of an electromagnetic field generator according to some embodiments of the present disclosure;
[0017] FIG5 is a schematic structural diagram of a plasma generating chamber according to some embodiments of the present disclosure;
[0018] FIG6A is a schematic structural diagram illustrating a position setting of a magnet fixing mechanism according to some embodiments of the present disclosure;
[0019] FIG6B shows a schematic structural diagram of a magnet fixing mechanism according to some embodiments of the present disclosure;
[0020] FIG6C is a schematic structural diagram showing a magnet fixing mechanism from another perspective according to some embodiments of the present disclosure;
[0021] FIG7 shows a schematic cross-sectional view of a flow restrictor tube according to some embodiments of the present disclosure;
[0022] FIG8 is a schematic structural diagram of a shunt tube according to some embodiments of the present disclosure;
[0023] FIG9 shows a cross-sectional schematic diagram of a separator block according to some embodiments of the present disclosure;
[0024] FIG10 shows a top view of a radio frequency plasma device according to some embodiments of the present disclosure;
[0025] FIG11 is a schematic diagram showing the three-dimensional structure of a radio frequency plasma device according to some embodiments of the present disclosure; FIG12 is a schematic diagram showing the structure of a vacuum system according to some embodiments of the present disclosure;
[0026] FIG13 is a schematic diagram showing a sealing structure in which the outer side surface of the sealing ring includes a tapered surface according to some embodiments of the present disclosure;
[0027] FIG14 is a schematic diagram showing a sealing structure in which the outer side surface of the sealing ring includes an arc-shaped surface according to some embodiments of the present disclosure;
[0028] 15A-C illustrate geometrical arrangements of magnets during simulation according to some embodiments of the present disclosure, wherein FIG. 15A illustrates an xy plane arrangement of magnets; FIG. 15B illustrates an xz plane arrangement of magnets; and FIG. 15C illustrates a three-dimensional arrangement of magnets.
[0029] 16A-C illustrate multi-slice magnetic field spatial distributions obtained after magnet simulation according to some embodiments of the present disclosure, wherein FIG16A illustrates the multi-slice magnetic field spatial distribution in the xy plane; FIG16B illustrates the multi-slice magnetic field spatial distribution in the xz plane; and FIG16C illustrates the multi-slice magnetic field spatial distribution in three dimensions.
[0030] FIG17 shows the surface magnetic field spatial distribution obtained after magnet simulation according to some embodiments of the present disclosure, wherein FIG17A shows the surface magnetic field spatial distribution in the xy plane; FIG17B shows the surface magnetic field spatial distribution in the xz plane; and FIG17C shows the surface magnetic field spatial distribution in the yz plane;
[0031] 18A-C show line result diagrams obtained after magnet simulation according to some embodiments of the present disclosure, wherein FIG. 18A shows a line result diagram of the x-axis; FIG. 18B shows a line result diagram of the y-axis; and FIG. 18C shows a line result diagram of the z-axis;
[0032] FIG19 shows a comparison diagram of effects of different implementations according to some embodiments of the present disclosure;
[0033] FIG20 shows a comparison of the effects of the radio frequency plasma device before and after adding a magnet for generating plasma-assisted epitaxial growth according to some embodiments of the present disclosure. In the above figures, the reference numerals represent:
[0034] 100 RF plasma device
[0035] 10 electromagnetic field generator, 11 radio frequency power supply, 12 conducting line, 121 feeding line, 1211 feeding end, 122 inductor coil, 123 grounding line, 13 electrode feedthrough, 14 first connecting member, 15 supporting block, 16 signal shielding cover, 161 fan, 17 protective member
[0036] 20 plasma generating chamber, 21 cavity, 22 contraction section, 23 limiting assembly, 231 first limiting member, 232 second limiting member, 233 ion filter
[0037] 30 Gas introduction assembly, 31 outer tube, 32 separator, 321 first connecting channel, 322 second connecting channel, 33 intake inner tube, 331 main body, 332 expansion section, 34 flow restrictor, 341 first gas channel, 342 second gas channel, 35 diverter tube, 351a, 351b, 351c, 351d-diverter hole, 36-gas inlet assembly, 361-flange gas pipe, 362-connecting flange, 363-tee, 364-observation window, 365-vent flange
[0038] 40 cooling device, 41 liquid inlet, 42 first connecting pipe, 43 second connecting pipe, 44 liquid outlet, 45 third connecting pipe, 46 fourth connecting pipe, 47 water cooling column, 48 water cooling head
[0039] 50-support mechanism, 51 support flange, 52-through flange
[0040] 60 limit block
[0041] 70 sealing assembly, 71 sealing ring, 72 sealing nut
[0042] 80 shielding shell
[0043] 90-magnetic field constraint mechanism, 91-magnet, 91a, 91b-magnet group, 911a-first row of magnets, 911b-second row of magnets, 911c-third row of magnets, 92-magnet cooling mechanism, 921-magnet inner cooling pipe, 922-magnet outer cooling pipe, 923-liquid inlet pipe, 924-liquid outlet pipe, 925-magnet inner liquid outlet pipe, 926-magnet cooling channel, 93-flange, 94-magnet fixing mechanism, 941-fixing ring, 942-support part, 9421-magnet fixing hole
[0044] 1000 vacuum system, 200 vacuum chamber, 300 sample rack DETAILED DESCRIPTION
[0045] Some embodiments of the present disclosure will be described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only exemplary embodiments of the present disclosure, rather than all embodiments.
[0046] In the description of the present disclosure, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", "top", "bottom", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present disclosure. In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance. In the description of the present disclosure, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "coupled" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two elements. In the present disclosure, the term "distal end" or "distal side" refers to the end or side that extends into a vacuum environment (e.g., a vacuum chamber), and the term "proximal end" or "proximal side" refers to the end or side opposite the distal end or distal end (e.g., the end or side that is away from the vacuum chamber, or the end or side within the vacuum chamber that is close to the vacuum chamber wall, etc.). Those skilled in the art will understand the specific meanings of the above terms in the present disclosure based on specific circumstances.
[0047] Figure 1A shows a schematic structural diagram of a radio frequency plasma device 100 according to some embodiments of the present disclosure. Figure 1B shows a cross-sectional view taken along line AA of Figure 1A. Figure 3A shows a schematic structural diagram of a portion of a radio frequency plasma device 100 according to some embodiments of the present disclosure. Figure 3B shows a cross-sectional view taken along line CC of Figure 3A.
[0048] As shown in Figures 1A, 1B, 3A, and 3B, the RF plasma device 100 may include an electromagnetic field generator 10, a magnetic field confinement mechanism 90, and a plasma generating chamber 20. The electromagnetic field generator 10 is configured to generate an electromagnetic field when energized, and the magnetic field confinement mechanism 90 is configured to generate a confining magnetic field. The plasma generating chamber 20 is coupled to the electromagnetic field generator 10 and the magnetic field confinement mechanism 90 and is configured to accommodate a working gas and the plasma generated by the working gas under the influence of the electromagnetic field and the confining magnetic field. Electrons and ions within the plasma generating chamber 20 undergo cyclotron motion under the influence of the electromagnetic field, increasing the probability of collision with gas molecules and the efficiency of gas ionization, thereby generating a high-density plasma.
[0049] Figure 4A shows a partial structural schematic diagram of an electromagnetic field generator 10 according to some embodiments of the present disclosure. Figure 4B shows a partial cross-sectional view of an electromagnetic field generator according to some embodiments of the present disclosure.
[0050] As shown in Figures 4A-4B, in some embodiments of the present disclosure, the electromagnetic field generator 10 may include a conductive line 12. As shown in Figure 1A, in some embodiments, the electromagnetic field generator 10 may also include a radio frequency power source 11. Those skilled in the art will appreciate that the electromagnetic field generator 10 may not include the radio frequency power source 11, but may be separate from the radio frequency power source 11 and connected to an external radio frequency power source 11 during use.
[0051] As shown in Figures 4A and 4B, the conductive line 12 may include a feed line 121, an inductor 122, and a ground line 123. The feed line 121 can be used to connect to the RF power supply 11, and the inductor 122 is connected to the feed line 121 and is wound around the plasma generating chamber 20, and can be used to generate an electromagnetic field. The ground line 123 is connected to the inductor 122 and can be used for grounding. The RF power supply 11 is electrically connected to the conductive line 12, and transmits a radio frequency current to the conductive line 12, such as a radio frequency current with a relatively low frequency (for example, 13.56 MHz), so that the inductor 122 generates an alternating magnetic field. As the radio frequency current continues to be transmitted, the alternating magnetic field of the inductor 122 will excite an induced electric field in the space around it, which can produce a cyclotron acceleration effect on the electrons in the plasma generating chamber 20 surrounding it, thereby increasing the probability of collision with gas molecules and increasing the ionization efficiency of gas molecules, thereby generating a higher density plasma. In addition, the working gas is cracked into plasma through radio frequency inductive coupling, thereby providing a more active working gas source, which can increase the proportion of gas participating in the reaction, thereby reducing the flow of working gas in the vacuum chamber and increasing the film growth rate.
[0052] Those skilled in the art will understand that although an RF current with a frequency of 13.56 MHz is selected in some embodiments of the present disclosure, this is merely exemplary. In other embodiments of the present disclosure, an RF current with a frequency of 27.12 MHz or other suitable frequencies may be used to pass through the inductor coil to generate an electromagnetic field.
[0053] In some embodiments of the present disclosure, the confining magnetic field is a closed magnetic field, and the central magnetic field direction of the confining magnetic field is horizontal (for example, as shown in FIG. 17A and FIG. 17B ).
[0054] In some embodiments, the electromagnetic field propagates in the plasma generating chamber 20 in the form of electromagnetic waves, and the electromagnetic waves are parallel to the confining magnetic field. For example, the electromagnetic field generated by the radio frequency current of the inductor 122 will propagate outward in the form of electromagnetic waves. When the electromagnetic wave enters the plasma generating chamber 20 parallel to the external magnetic field and propagates in the plasma discharge region, the electrons and ions in the plasma generating chamber 20 will perform cyclotron motion under the action of the electromagnetic field. The electromagnetic wave is split into left-handed polarization components and right-handed polarization components in the plasma discharge region, wherein the right-handed polarization component rotates synchronously with the cyclotron electrons. The electrons will be continuously accelerated synchronously to obtain higher energy. Through the interaction between the electromagnetic wave and the plasma, the energy of the electrons is transferred to the plasma, greatly increasing the plasma density. At the same time, the higher collision frequency also provides a higher density plasma under low pressure conditions, which is suitable for use in ultra-high vacuum environments.
[0055] FIG6A shows a schematic structural diagram of the position setting of the magnet 91 according to some embodiments of the present disclosure.
[0056] In some embodiments of the present disclosure, the magnetic field confinement mechanism 90 may include at least one magnet 91 to generate a confining magnetic field.
[0057] Those skilled in the art will appreciate that a closed magnetic field can be generated by any suitable number of magnets, and the magnets can also take any suitable form, such as permanent magnets (e.g., magnets, etc.), electromagnets (e.g., coils, etc.), etc. In some embodiments, the magnetic field confinement mechanism 90 may include a magnetic coil (not shown) to generate a closed magnetic field.
[0058] As shown in FIG6A , in some embodiments of the present disclosure, at least one magnet 91 is disposed outside the inductor 122. Those skilled in the art will appreciate that FIG6A does not illustrate components such as the magnet external cooling tube 922, the magnet internal cooling tube 921, and the shielding shell 80 in some embodiments of the present disclosure in order to more clearly illustrate the placement of the magnets in some embodiments. Furthermore, the fact that the multiple magnets 91 are disposed outside the inductor 122 as shown in FIG6A is merely exemplary, and the at least one magnet 91 may also be disposed in other locations so that the at least one magnet 91 can generate a confining magnetic field that acts together with the electromagnetic field on the working gas to generate plasma.
[0059] As shown in FIG6A , in some embodiments of the present disclosure, at least one magnet 91 may include multiple magnets, such as symmetrically arranged magnet groups 91a and 91b, each of which includes three rows of magnets spaced apart. For example, magnet group 91a includes a first row of magnets 911a, a second row of magnets 911b, and a third row of magnets 911c, each row of magnets including three magnets spaced apart laterally.
[0060] Those skilled in the art will appreciate that the arrangement of the magnets shown in FIG6A is merely exemplary. For example, the plurality of magnets 91 may include magnets arranged in other arrangements, and the magnet groups 91a and 91b may also include magnets in other rows, such as one row of magnets, two rows of magnets, or four or more rows of magnets. The fact that each row of magnets includes three magnets spaced laterally apart is also merely exemplary, and each row of magnets may also include other numbers of magnets, such as one magnet, two magnets, or four or more magnets.
[0061] As shown in FIG6A , in some embodiments of the present disclosure, the magnet may be a cylindrical magnet. Those skilled in the art will appreciate that this is merely exemplary and magnets of other shapes may also be used, such as cubic magnets, prismatic magnets, and the like.
[0062] Figure 6B shows a schematic structural diagram of a magnet fixing mechanism 94 according to some embodiments of the present disclosure. Figure 6C shows a schematic structural diagram of a magnet fixing mechanism 94 from another perspective according to some embodiments of the present disclosure.
[0063] In some embodiments of the present disclosure, as shown in Figures 2A, 2B and 6A, the magnetic field confinement mechanism 90 may further include a magnet fixing mechanism 94. The magnet fixing mechanism 94 may be used to set the magnet 91 on the periphery of the inductor 122. As shown in Figure 6B, in some embodiments, the magnet fixing mechanism 94 may include a support portion 942 for setting the magnet 91 on the periphery of the inductor 122. As shown in Figure 6C, the support portion 942 may include a plurality of magnet fixing holes 9421 for fixing a plurality of magnets. The support portion 942 may be roughly cylindrical, and may further include a plurality of oppositely or spaced portions, such as the two oppositely arranged portions shown in Figures 6A-6C. The magnet fixing mechanism 94 may further include a fixing ring 941, which is arranged at the distal end of the support portion 942, as shown in Figures 6A-6C.
[0064] Figure 2A shows a schematic structural diagram of a magnetic field confinement mechanism according to some embodiments of the present disclosure. Figure 2B shows a cross-sectional view taken along line BB of Figure 2A.
[0065] As shown in Figures 2A and 3B, in some embodiments of the present disclosure, the magnetic field confinement mechanism 90 may further include a magnet cooling mechanism 92. As shown in Figure 3B, the magnet cooling mechanism 92 may include a magnet inner cooling pipe 921 and a magnet outer cooling pipe 922. The magnet inner cooling pipe 921 is arranged on the inner side of the support portion 942 (the support portion 942 is omitted in the figure for convenience of illustration). The magnet outer cooling pipe 922 is sleeved outside the magnet inner cooling pipe 921 and arranged on the outer side of the support portion 942. A magnet cooling channel 926 for circulating coolant is formed between the magnet inner cooling pipe 921 and the magnet outer cooling pipe 922. Since the magnet inner cooling pipe 921 and the magnet outer cooling pipe 922 are respectively arranged on the inner side and the outer side of the support portion 942, multiple magnets 91 (for example, magnet groups 91a, 91b) can be located in the magnet cooling channel 926, thereby being immersed in the coolant, so that the cooling effect is enhanced.
[0066] As shown in FIG3B , the magnet cooling mechanism 92 may further include a magnet cooling liquid inlet pipe 923 and a magnet cooling liquid outlet pipe 924. The magnet cooling liquid inlet pipe 923 is used to introduce cooling liquid into the magnet cooling channel 926. The magnet cooling liquid outlet pipe 924 is used to discharge the cooling liquid in the magnet cooling channel 926.
[0067] As shown in Figures 2B and 3B, in some embodiments of the present disclosure, the magnet cooling mechanism 92 may further include a magnet cooling inner liquid outlet pipe 925, which extends along the magnet external cooling pipe 922 and has its distal end connected to the magnet cooling channel 926. When the liquid level in the magnet cooling channel 926 is higher than that of the magnet cooling inner liquid outlet pipe 925, the coolant can be discharged from the magnet cooling inner liquid outlet pipe 925. The magnet cooling inner liquid outlet pipe 925 is connected to the magnet cooling liquid outlet pipe 924 and can be used to discharge the coolant in the magnet cooling channel 926.
[0068] The fixing ring 941 of the magnet fixing mechanism 94 can be disposed at the distal end of the magnet cooling mechanism 92 and sealedly connected to the distal end of the magnet cooling channel 926. The support portion 942 is connected to the fixing ring 941 and extends toward the proximal end of the magnet cooling channel 926. As shown in FIG6A , the magnetic field confinement mechanism 90 can further include a flange 93. The flange 93 is sealedly connected to the proximal end of the magnet cooling channel 926. The flange 93 can include a channel that allows the magnet cooling liquid inlet pipe 923 and the magnet cooling liquid outlet pipe 924 to pass through.
[0069] FIG4C shows an enlarged view of a portion of the structure of the electromagnetic field generator 10 according to some embodiments of the present disclosure.
[0070] As shown in Figure 4C, in some embodiments of the present disclosure, the electromagnetic field generator 10 may further include an electrode feedthrough 13, a first connector 14 and a second connector (not shown in the figure). The electrode feedthrough 13 connects the feed line 121 to the RF power supply 11, and the first connector 14 is arranged between the feed line 121 and the electrode feedthrough 13, and can be used to connect the feed line 121 and the electrode feedthrough 13. The first connector 14 is "L"-shaped, and the feed end 1211 of the feed line 121 is fitted with the short side of the first connector 14, and abuts against the long side of the first connector 14 to form a conductive path. The distal end of the electrode feedthrough 13 is connected to the long side of the first connector 14 by bolts, and the RF current generated by the RF power supply 11 can be introduced into the feed line 121 through the first connector 14, and the electrode feedthrough 13 and the feed line 121 are detachably connected by bolts, which is convenient for maintenance and replacement. The second connector is arranged between the electrode feedthrough 13 and the RF power supply 11, and can be used to connect the electrode feedthrough 13 and the RF power supply 11. One end of the second connector is connected to the proximal end of the electrode feedthrough 13, and the other end is connected to the RF power supply 11 via a bolt, and can be used to direct the RF current generated by the RF power supply 11 into the feed line 121. In some embodiments, the electrode feedthrough 13 can pass through the support flange 51 to achieve electrical feeding between the vacuum environment and the outside world.
[0071] Those skilled in the art will understand that although in some embodiments of the present disclosure, the first connecting member 14 is "L"-shaped, this is merely exemplary, and the first connecting member 14 may also be in other suitable shapes, such as "I" shape, "S" shape, or straight shape.
[0072] As shown in FIG4A , in some embodiments of the present disclosure, the conductive line 12 may include a first conductive line and a second conductive line. The first conductive line and the second conductive line are connected at the feed end 1211 of the feed line 121 (e.g., forming a U-shaped connection structure), and form a double-wound structure at the inductor 122. The first conductive line and the second conductive line are wound to form the feed line 121, the inductor 122, and the ground line 123, which are connected in sequence. To avoid confusion, the first conductive line and the second conductive line are no longer separately indicated in the figure.
[0073] As shown in FIG3B , in some embodiments of the present disclosure, the electromagnetic field generator 10 may further include a protective member 17. The protective member 17 may be, for example, at least one insulating ceramic tube. The insulating ceramic tube may be disposed over the feed line 121 and the ground line 123 for insulation. The insulating ceramic tube may be composed of multiple small ceramic tubes to facilitate adjustment of the direction, or may be composed of a single ceramic tube.
[0074] FIG5 shows a schematic structural diagram of a plasma generating chamber 20 according to some embodiments of the present disclosure.
[0075] As shown in Figures 1B, 3B, and 5, in some embodiments of the present disclosure, the plasma generating chamber 20 may include a cavity 21 and a contraction section 22, and the inductor coil 122 is wound around the cavity 21. The induced electric field generated by the inductor coil 122 covers the cavity 21, so that the working gas is ionized into plasma in the cavity 21.
[0076] As shown in Figures 1A, 3B, 4C, and 5, in some embodiments of the present disclosure, the RF plasma device 100 may further include a gas introduction assembly 30. The gas introduction assembly 30 may include an outer tube 31, a separator 32, and an inner air intake tube 33. The separator 32 is sealedly connected to the outer tube 31 and is located at the proximal end of the outer tube 31, defining a proximal end portion at the proximal end of the outer tube 31. The proximal end of the inner air intake tube 33 is sealedly disposed within the outer tube 31 via the separator 32 and communicates with a gas source (not shown) through the proximal end portion of the outer tube 31, enabling the introduction of gas generated by the gas source. Furthermore, the separator 32 creates a watertight seal between the interior of the outer tube 31 and its proximal end portion, preventing coolant surrounding the inner air intake tube 33 from seeping into the proximal end portion of the outer tube 31. The inner air intake tube 33 may include a main body 331 and a distal expansion section 332. The expansion section 332 engages with the distal end of the outer tube 31 and is used to introduce gas into the cavity 21. Those skilled in the art will appreciate that, although in some embodiments of the present disclosure, the outer tube 31 is divided into two sections and connected together by the separator 32, this is merely exemplary. The outer tube may also be integrally formed, with the separator disposed within the outer tube and defining a proximal end portion at the proximal end of the outer tube.
[0077] Those skilled in the art will understand that although in some embodiments of the present disclosure, the main body 331 and the expansion section 332 of the inner intake pipe 33 are divided into two sections and connected by processes such as welding, this is merely exemplary and the main body 331 and the expansion section 332 may also be formed as one piece.
[0078] In some embodiments of the present disclosure, as shown in FIG1A , the gas introduction assembly 30 may further include a gas inlet assembly 36. The gas inlet assembly 36 may include a flanged gas pipe 361, a connecting flange 362, a tee 363, an observation window 364, and a vent flange 365. The flanged gas pipe 361 is used to introduce gas into the inner air intake tube 33. The proximal end of the flanged gas pipe 361 is sealedly connected to one connection port of the tee 363 via the connecting flange 362. The other connection port of the tee 363 is sealedly connected to the vent flange 365. The remaining proximal connection port of the tee 363 is provided with an observation window 364.
[0079] FIG7 shows a schematic structural diagram of a flow restrictor tube 34 according to some embodiments of the present disclosure.
[0080] As shown in Figures 5 and 7, in some embodiments of the present disclosure, the gas introduction assembly 30 may further include a flow limiting tube 34. The flow limiting tube 34 is at least partially disposed in the expansion section 332, and its distal end extends into the contraction section 22 of the plasma generating chamber 20. The proximal outer diameter of the flow limiting tube 34 is larger than the inner diameter of the main body 331 of the air inlet inner tube 33, and the inner diameter of the flow limiting tube 34 is smaller than the inner diameter of the main body 331 of the air inlet inner tube 33. The flow limiting tube 34 includes a first gas channel 341 and a second gas channel 342, and the diameter of the first gas channel 341 may be larger than that of the second gas channel 342. The working gas flows from the first gas channel 341 through the second gas channel 342 and then enters the plasma generating chamber 20, which can limit the flow of the working gas so that the gas molecules are fully ionized and the ionization efficiency is improved.
[0081] FIG8 is a schematic structural diagram of a shunt tube 35 according to some embodiments of the present disclosure.
[0082] As shown in Figures 5 and 8, in some embodiments of the present disclosure, the gas introduction assembly 30 may further include a shunt tube 35. The shunt tube 35 is sleeved on the distal end of the flow restricting tube 34, with the proximal end extending into the expansion section 332 and the distal end extending into the contraction section 22. The distal end of the shunt tube 35 is provided with at least one shunt hole 351 (e.g., shunt hole 351a, shunt hole 351b, shunt hole 351c, shunt hole 351d), which can be used to divert the introduced working gas to increase the disorder between the gas molecules, fully ionize the gas molecules, and improve the ionization efficiency.
[0083] As shown in Figures 1A, 3B, 4A, 4B and 4C, the RF plasma device 100 may further include a cooling device 40. The cooling device 40 may include a liquid inlet pipe 41, a first connecting pipe 42, a second connecting pipe 43, a liquid outlet pipe 44, a third connecting pipe 45 and a fourth connecting pipe 46. The conductive circuit 12 may include a hollow first conductor and a second conductor, which are connected at the feed end of the feed circuit. The liquid inlet pipe 41 is connected to the first conductor through the third connecting pipe 45 at the proximal end of the grounding circuit 123 and can be used to pass cooling liquid into the conductive circuit 12. The first connecting pipe 42 is connected to the second conductor at the proximal end of the grounding circuit 123 and is connected to the portion of the outer tube 31 located at the distal end of the partition block 32. The coolant enters the outer tube 31. The second connecting tube 43 extends along the outer tube 31 and is connected to the outer tube 31 at its distal end. When the coolant level in the outer tube 31 exceeds that of the second connecting tube 43, it can be discharged from the second connecting tube 43, ensuring that the coolant effectively cools the gas introduction assembly 30. The liquid outlet pipe 44 is connected to the proximal end of the second connecting tube 43 via the fifth connecting tube 46 and can be used to discharge the coolant from the outer tube 31.
[0084] As shown in Figures 1A, 3B, and 4A, in some embodiments of the present disclosure, the cooling device 40 may further include a water-cooling column 47. The distal end of the water-cooling column 47 is connected to the distal end of the outer tube 31 and is sleeved outside the proximal end of the intake inner tube 33. The proximal end of the water-cooling column 47 is sealed to the intake inner tube 33. The distal ends of the first connecting tube 42, the second connecting tube 43, and the fourth connecting tube 46 are connected to the water-cooling column 47.
[0085] As shown in FIG3B , in some embodiments of the present disclosure, the cooling device 40 may further include a water-cooling seal 48. The water-cooling seal 48 is disposed at the distal ends of the outer tube 31 and the intake inner tube 33 to form a watertight state between the distal ends of the outer tube 31 and the intake inner tube 33.
[0086] In some embodiments of the present disclosure, coolant flows through the hollow first and second conductors to cool the feed circuit 121, the inductor 122, and the ground circuit 123, which in turn cools the gas introduction assembly 30. This long coolant circulation path ensures sufficient cooling, preventing damage to the device due to overheating and effectively extending its service life. Furthermore, in some embodiments of the present disclosure, low-frequency, low-voltage alternating current is used, so even if coolant is passed through the conductive circuit 12, no electrical conductivity issues will occur.
[0087] Those skilled in the art will understand that although in some embodiments of the present disclosure, the cooling device 40 cools both the conductive line 12 and the gas introduction assembly 30, this is only a preferred embodiment. In some embodiments, only the conductive line 12 may be cooled, or only the gas introduction assembly 30 may be cooled, or the conductive line 12 or the gas introduction assembly 30 may be cooled independently. For example, the conductive line may also include a first conductive line and a second conductive line that are hollow inside, and the radio frequency plasma device may also include a cooling device. The cooling device may include: a liquid inlet pipe, connected to the first conductive line at the proximal end of the ground line, for introducing a coolant into the conductive line; and a liquid outlet pipe, connected to the second conductive line at the proximal end of the ground line, for discharging the coolant.
[0088] FIG9 shows a schematic cross-sectional view of a separator block 32 according to some embodiments of the present disclosure.
[0089] As shown in FIG9 , in some embodiments of the present disclosure, the partition block 32 includes a first connecting channel 321 and a second connecting channel 322. The first connecting channel 321 and the second connecting channel 322 are L-shaped channels. The first connecting channel 321 can be used to connect the first connecting tube 42 to the outer tube 31, and the second connecting channel 322 connects the second connecting tube 43 to the liquid outlet tube 44.
[0090] Those skilled in the art will appreciate that, although in some embodiments of the present disclosure, the first connecting channel 321 and the second connecting channel 322 of the partition block 32 are L-shaped channels, this is merely exemplary, and the first connecting channel and the second connecting channel may also be S-shaped channels or Z-shaped channels. Similarly, although in some embodiments of the present disclosure, the first connecting channel 321 and the second connecting channel 322 are provided in the partition block 32, this is merely exemplary, and the partition block may also be provided with a first connecting hole and a second connecting hole, the first connecting hole being used to connect the first connecting tube 42 to the outer tube 31, and the second connecting hole being used to connect the second connecting tube 43 to the liquid outlet tube 44.
[0091] As shown in Figures 1A and 3B, in some embodiments of the present disclosure, the RF plasma device 100 may further include a support mechanism 50 and a limit block 60. The support mechanism 50 may include a support flange 51. The outer tube 31 is passed through the support flange 51, the limit block 60 is arranged at the distal end of the outer tube 31, and the grounding line 123 is passed through the limit block 60. The limit block 60 can be used to fix the position of the grounding line 123. When adjusting the angle and / or position of the conductive line 12, only the feed line 121 needs to be adjusted. The support flange 51 can be used to install the RF plasma device 100 on the vacuum chamber to achieve vacuum sealing. In some embodiments, the support mechanism 50 may further include a through flange 52, the distal end of the through flange 52 is sealed with the flange 93, and the proximal end of the through flange 52 is connected to the support flange 51. As shown in Figures 3B and 5, in some embodiments of the present disclosure, the RF plasma device 100 may further include a sealing assembly 70. The sealing assembly 70 may include a sealing ring 71 and a sealing nut 72. The sealing ring 71 is sleeved on the contraction section 22 and is partially located in the expansion section 332 of the intake inner tube 33. The sealing nut 72 is threadedly connected to the expansion section 332 and can be used to tighten the sealing ring 71 to seal the contraction section 22 and the expansion section 332 of the intake inner tube 33.
[0092] Existing vacuum seals are mainly classified by the material of the sealing ring. They are composed of synthetic materials such as rubber and metal materials such as sealing indium wire. Rubber synthetic materials have the advantages of high elasticity, high wear resistance, and suitable mechanical strength, making them widely used in vacuum seals. However, they have large outgassing rates and permeability, and cannot be baked at high temperatures and are not resistant to radiation. Metal indium wire seals, on the other hand, have a low melting point and baking temperatures cannot exceed 150°C. They are often used for vacuum sealing in low-temperature environments. In addition, the indium wire tends to flow easily after being pressed. In plasma research, due to the increase in plasma power or the observation of different plasma test results over long periods of time, the sealing rubber rings have been burned, and the sealing indium wire has melted and flowed into the vacuum chamber, causing vacuum environmental pollution and thus affecting the plasma research results.
[0093] Therefore, in some embodiments of the present disclosure, the sealing ring 71 may include pyrolytic boron nitride (PBN) and / or boron nitride (BN). For example, the sealing ring 71 may be made of pyrolytic boron nitride (PBN) material, or made of boron nitride (BN) material. The melting point of pyrolytic boron nitride (PBN) is 1750°C-2300°C, and the melting point of boron nitride (BN) can be as high as 2700°C, which can prevent the equipment from melting and deforming due to overheating, thereby greatly improving the sealing effect. In addition, PBN and BN are non-metallic materials. Parts using PBN and / or BN as sealing materials also have the characteristics of high temperature resistance, corrosion resistance, high resistance, good electrical insulation performance, smooth surface, no pores, non-wetting with most semiconductor melts, good oxidation resistance and thermal shock resistance, etc., so that the equipment will not interfere with the vacuum degree of the vacuum chamber when in use, and can better maintain the vacuum degree of the vacuum environment. At the same time, during the loading and unloading process, it can also protect the internal parts of the present invention.
[0094] Figure 13 shows a schematic diagram of a sealing structure in which the outer side surface of the sealing ring 71 includes a conical surface according to some embodiments of the present disclosure. Figure 14 shows a schematic diagram of a sealing structure in which the outer side surface of the sealing ring 71 includes an arcuate surface according to some embodiments of the present disclosure.
[0095] As shown in Figures 13 and 14, the sealing nut 72 and the sealing ring 71 cooperate with each other and are sleeved on the contraction section 22. The sealing nut 72 and the expansion section 332 are threaded together to pre-tighten the sealing ring 71, so that the sealing ring 71 forms a line seal on the contact surface of the sealing nut 72, the expansion section 332, and the contraction section 22, preventing leakage of the medium on both sides and allowing the medium to flow in from the middle. It has the characteristics of good sealing performance and easy disassembly.
[0096] In some embodiments of the present disclosure, as shown in FIG13 , the outer side surface of the sealing ring 71 includes a tapered surface, and the expansion section 332 and the sealing nut 72 include tapered concave surfaces that cooperate with the outer side surface of the sealing ring 71. Those skilled in the art will appreciate that the outer side surface of the sealing ring 71 may include two oppositely disposed tapered surfaces, and the cross-section may be triangular, trapezoidal, or a truncated triangle or trapezoid.
[0097] In some embodiments of the present disclosure, as shown in FIG14 , the outer side surface of the sealing ring 71 includes an arcuate surface, and the expansion section 332 and the sealing nut 72 include an arcuate concave surface that cooperates with the outer side surface of the sealing ring 71. Those skilled in the art will appreciate that the arcuate surface may include a circular arc surface or an elliptical arc surface.
[0098] In some embodiments of the present disclosure, when the outer side surface of the sealing ring 71 includes a conical surface or an arc-shaped surface, it can withstand the pressure on both sides of the sealing nut 72 and the expansion section 332 without breaking or deforming, and at the same time can seal the contraction section 22 and the expansion section 332 of the intake inner tube 33 to prevent the working gas from escaping into the vacuum chamber 200 (as shown in Figure 14), causing a decrease in the vacuum degree and affecting the vacuum processing (for example, coating) effect.
[0099] As shown in Figures 1A and 1B, in some embodiments of the present disclosure, the RF plasma device 100 may further include a shielding shell 80. The shielding shell 80 is mounted on the electromagnetic field generator 10 and can be used to shield electromagnetic signals. The proximal end of the shielding shell 80 is fixedly connected to the support flange 51.
[0100] Those skilled in the art will understand that although in some embodiments of the present disclosure, the shielding shell 80 is only an integral shell, this is only exemplary, and the shielding shell 80 can also be composed of multiple shells, for example, the shielding shell 80 can include a first shell and a second shell.
[0101] As shown in FIG5 , in some embodiments of the present disclosure, the plasma generating chamber 20 may further include a limiting assembly 23. The limiting assembly 23 may include a first limiting member 231 and a first limiting member 232. The first limiting member 231 is sleeved on the contraction section 22 of the plasma generating chamber 20, and the first limiting member 232 is disposed at the distal end of the shielding shell 80. The first limiting member 231 and the first limiting member 232 may be made of high-melting-point metals such as tantalum or molybdenum, and can block the outward diffusion of the electric field, thereby allowing the plasma to converge within the range of the plasma generating chamber 20, limiting the movement of the plasma toward the proximal end of the shielding shell 80, preventing ion corrosion of the equipment, and extending the service life of the equipment.
[0102] FIG. 10 illustrates a top view of a radio frequency plasma device 100 according to some embodiments of the present disclosure.
[0103] As shown in Figures 5 and 10, in some embodiments of the present disclosure, the RF plasma device 100 may further include an ion filter 233. The ion filter 233 is disposed at the distal end of the shielding housing 80 and covers the distal end of the cavity 21 of the plasma generating chamber 20, and can be used to filter plasma. Through the screening of the ion filter 233, high-energy ions can be suppressed from reaching the sample surface, reducing damage. The device can be widely used in vacuum systems (e.g., molecular beam epitaxy systems) for nitride growth, nitrogen atom implantation and doping, oxide growth, oxygen atom implantation and doping, hydride growth, and hydrogen atom surface cleaning.
[0104] The radio frequency plasma devices according to some embodiments of the present disclosure can achieve beneficial technical effects. For example, the radio frequency plasma devices according to some embodiments of the present disclosure can resolve one or more of the following issues in conventional technologies: the high risk and poor safety of using high voltage during production and testing, and the low gas ionization efficiency of using high-voltage direct current. These devices can achieve the technical effects of using low-voltage alternating current, which is safer, improves gas ionization efficiency, and has a simpler structure and lower costs.
[0105] FIG11 shows a schematic perspective structural diagram of a radio frequency plasma device 100 according to some embodiments of the present disclosure.
[0106] As shown in Figures 1A and 11, the RF plasma device 100 may further include a support block 15 and a signal shield 16. The support block 15 is used to support the RF power supply 11. The signal shield 16 is disposed at the electrode feedthrough 13 as shown in Figure 4C. For example, the electrode feedthrough 13 is disposed within the signal shield 16 to shield the electrode feedthrough 13 from signal interference. In some embodiments, the signal shield 16 may further include a fan 161 to dissipate heat from the shielded electrode feedthrough 13.
[0107] Figures 15A-C show the geometric arrangement of magnets during simulation according to some embodiments of the present disclosure, wherein Figure 15A shows the xy plane arrangement of the magnets; Figure 15B shows the xz plane arrangement of the magnets; and Figure 15C shows the three-dimensional arrangement of the magnets. Figures 16A-C show the multi-faceted magnetic field spatial distribution obtained after the magnet simulation for the geometric arrangement of the magnets shown in Figures 15A-C according to some embodiments of the present disclosure, wherein Figure 16A shows the multi-faceted magnetic field spatial distribution in the xy plane; Figure 16B shows the multi-faceted magnetic field spatial distribution in the xz plane; and Figure 16C shows the three-dimensional multi-faceted magnetic field spatial distribution. Figures 17A-C show the surface magnetic field spatial distribution obtained after the magnet simulation for the geometric arrangement of the magnets shown in Figures 15A-C according to some embodiments of the present disclosure, wherein Figure 17A shows the surface magnetic field spatial distribution in the xy plane; Figure 17B shows the surface magnetic field spatial distribution in the xz plane; and Figure 17C shows the surface magnetic field spatial distribution in the yz plane. Figures 18A-C show line result diagrams obtained after magnet simulation for the geometric arrangement of magnets as shown in Figures 15A-C according to some embodiments of the present disclosure, wherein Figure 18A shows the line result diagram of the x-axis; Figure 18B shows the line result diagram of the y-axis; and Figure 18C shows the line result diagram of the z-axis. It can be seen that the magnetic flux density is uniformly or relatively uniformly distributed on the x-axis, y-axis, and z-axis.
[0108] As shown in Figures 15A-15C, in some embodiments of the present disclosure, a magnet arrangement as shown in Figures 6A to 6C is adopted, and three rows of magnets are arranged from bottom to top to perform simulation experiments. The simulation experiment results are shown in Figures 16A to 18C.
[0109] FIG19 shows a comparison diagram of effects of different implementations according to some embodiments of the present disclosure.
[0110] The Fe-Mian MBE1000 system was used to test the pretreatment chamber with a test power of 400W. The plasma intensity of the radio frequency plasma device of some embodiments of the present disclosure under three conditions, before and after adding the magnet, at different gas flow rates, is shown in Figure 19. It can be seen that, with other conditions unchanged, a magnetic field confinement mechanism capable of generating a confined magnetic field as shown in Figure 6A is added on the original basis, the magnet arrangement is shown in Figures 15A-C, the multi-section magnetic field spatial distribution obtained after the magnet simulation is shown in Figures 16A-C, and the surface magnetic field spatial distribution obtained after the magnet simulation is shown in Figures 17A-C. Compared with the case without the confined magnetic field, after adding the magnet, the optimal working conditions of the working gas are reduced from 11sccm to 5sccm, the working range is improved from greater than 4sccm to 2sccm, and the plasma intensity is increased from more than 20,000 to more than 40,000 (dimensionalized relative value). By adding a magnetic field confinement mechanism, a higher density plasma can be provided when other process conditions remain unchanged, which is suitable for use in ultra-high vacuum environments.
[0111] Those skilled in the art will understand that although the magnets shown in FIG. 15A to FIG. 15C are shaped like cylinders, this is merely exemplary. In some embodiments of the present disclosure, magnet materials of other shapes, such as rectangular parallelepiped magnets, may also be used.
[0112] FIG12 shows a schematic structural diagram of a vacuum system 1000 according to some embodiments of the present disclosure.
[0113] As shown in FIG12 , a vacuum system 1000 may include a vacuum chamber 200, a radio frequency plasma device 100, and a sample holder 300. The radio frequency plasma device 100 may be at least partially disposed within the vacuum chamber 200 via a support flange 51 and may be used to emit plasma toward the sample holder 300 within the vacuum chamber 200, thereby performing various vacuum processes such as coating, cleaning, and implantation.
[0114] FIG20 shows a comparison diagram of the effects of using a radio frequency plasma device for generating plasma-assisted epitaxial growth before and after adding a magnet according to some embodiments of the present disclosure.
[0115] Process tests were conducted on a coating system used for epitaxial growth at a power of 400W. The epitaxial sample was aluminum nitride (AlN). The growth rates of plasma-assisted epitaxial growth under different gas flow rates using the RF plasma device of some embodiments of the present disclosure, both before and after the addition of a magnet, are shown in Figure 20. As can be seen, with other conditions remaining unchanged, a magnetic field confinement mechanism capable of generating a confining magnetic field, as shown in Figure 6A, was added to the original structure. The magnet arrangement is shown in Figures 15A-C, the multi-faceted magnetic field spatial distribution obtained after magnet simulation is shown in Figures 16A-C, and the surface magnetic field spatial distribution obtained after magnet simulation is shown in Figures 17A-C. Compared to the case without a confining magnetic field, the required gas flow rate to achieve the same epitaxial growth rate is lower. For example, at a growth rate of 0.5 μm / h, the gas flow rate required without a magnetic field is 2 sccm, while with a magnetic field, only 1 sccm is required.
[0116] The vacuum systems according to some embodiments of the present disclosure can achieve beneficial technical effects. For example, the vacuum systems according to some embodiments of the present disclosure can resolve one or more of the following issues in conventional technologies: long production times, low production efficiency, and high production costs. This can improve system production efficiency, reduce costs, and achieve a wider range of applicability.
[0117] It should be pointed out that the above are only exemplary embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the scope of protection of the present disclosure.
Claims
1. A radio frequency plasma device, characterized in that: include: An electromagnetic field generator, used for generating an electromagnetic field after being energized; A magnetic field confinement mechanism, used for generating a confining magnetic field; as well as The plasma generating chamber is coupled with the electromagnetic field generator and the magnetic field confinement mechanism, and is used to accommodate the working gas and the plasma generated by the working gas under the action of the electromagnetic field and the confinement magnetic field.
2. The radio frequency plasma device according to claim 1, characterized in that: The electromagnetic field generator comprises: Conducting lines, including: A feeding line, used for connecting to a radio frequency power source; an inductor coil connected to the feed line and wound around the plasma generating chamber for generating an electromagnetic field; and A grounding circuit is connected to the inductor coil.
3. The radio frequency plasma device according to claim 1, characterized in that: The confining magnetic field is a closed magnetic field, and the central magnetic field direction of the confining magnetic field is horizontal; and / or The electromagnetic field propagates in the plasma generating cavity in the form of electromagnetic waves, and the electromagnetic waves are parallel to the confining magnetic field.
4. The radio frequency plasma device according to claim 2, characterized in that: The magnetic field confinement mechanism includes at least one magnet to generate a confining magnetic field.
5. The radio frequency plasma device according to claim 4, characterized in that: The at least one magnet includes a plurality of magnets, and the magnetic field confinement mechanism further includes: The magnet fixing mechanism includes a supporting portion for arranging the plurality of magnets on the periphery of the inductor coil.
6. The radio frequency plasma device according to claim 5, characterized in that: The magnetic field confinement mechanism further includes a magnet cooling mechanism, and the magnet cooling mechanism includes: a magnet inner cooling tube, disposed inside the support portion; and A magnet outer cooling pipe is sleeved outside the magnet inner cooling pipe and is arranged on the outside of the support portion, and a magnet cooling channel for circulating coolant is formed between the inner cooling pipe and the outer cooling pipe; The magnet fixing mechanism further includes a fixing ring, which is arranged at the distal end of the support portion and is sealed and connected to the distal end of the magnet cooling channel.
7. The radio frequency plasma device according to claim 2, characterized in that: The electromagnetic field generator further comprises: an electrode feedthrough for connecting the feed circuit to the radio frequency power supply; a first connector, disposed between the feed line and the electrode feedthrough, for connecting the feed line and the electrode feedthrough; and The second connector is provided between the electrode feedthrough and the radio frequency power supply, and is used to connect the electrode feedthrough and the radio frequency power supply.
8. The radio frequency plasma device according to claim 2, characterized in that: The conductive line includes a first conductive line and a second conductive line, The first conductive wire and the second conductive wire are connected at a feeding end of the feeding circuit, and form a double-winding structure at the inductor coil.
9. The radio frequency plasma device according to claim 2, characterized in that: The plasma generating chamber comprises a cavity and a contraction section, and the inductor coil is wound around the cavity. The radio frequency plasma device further includes a gas introduction component, The gas introduction component comprises: External control; a separator block sealingly connected to the outer tube and defining a proximal end portion at the proximal end of the outer tube; an air inlet inner tube, the proximal end of which is sealedly disposed in the outer tube through the partition block and is connected to the gas source through the proximal end portion for introducing the gas generated by the gas source; The air inlet inner tube comprises a main body and an expansion section at the distal end, wherein the expansion section engages with the distal end of the outer tube for inputting gas into the cavity.
10. The radio frequency plasma device according to claim 9, characterized in that: The gas introduction component further includes: A flow limiting tube is at least partially arranged in the expansion section, and its distal end extends into the contraction section of the plasma generating chamber, the proximal outer diameter of the flow limiting tube is larger than the inner diameter of the main body of the air intake inner tube, and the inner diameter of the flow limiting tube is smaller than the inner diameter of the main body of the air intake inner tube.
11. The radio frequency plasma device according to claim 10, characterized in that: The gas introduction component further includes: The shunt tube is sleeved on the distal end of the flow limiting tube, with the proximal end extending into the expansion section and the distal end extending into the contraction section. The distal end of the shunt tube is provided with at least one shunt hole for diverting the introduced gas.
12. The radio frequency plasma device according to claim 9, characterized in that The conductive line includes a first conductive wire and a second conductive wire with a hollow interior. The radio frequency plasma device further includes a cooling device, The cooling device comprises: a liquid inlet, connected to the first conductive wire at a proximal end of the grounding circuit, and used for introducing cooling liquid into the conductive circuit; A liquid outlet pipe is connected to the second wire at the proximal end of the grounding line and is used to discharge the cooling liquid.
13. The radio frequency plasma device according to claim 9, characterized in that: The conductive line includes a first conductive line and a second conductive line with a hollow interior, wherein the first conductive line and the second conductive line are connected at a feeding end of the feeding line. The radio frequency plasma device further includes a cooling device, The cooling device comprises: a liquid inlet, connected to the first conductive wire at a proximal end of the grounding circuit, and used for introducing cooling liquid into the conductive circuit; The first connecting tube is connected to the second wire at the proximal end of the grounding line and is connected to the outer tube. communicating with a portion distal to the partition block; A second connecting tube extends along the outer tube and has a distal end connected to the outer tube. The liquid outlet is connected to the proximal end of the second connecting tube and is used to discharge the coolant in the outer tube.
14. The radio frequency plasma device according to claim 13, characterized in that: The partition block includes a first connecting channel and a second connecting channel. The first connecting channel is used to connect the first connecting tube with the outer tube, and the second connecting channel connects the second connecting tube with the liquid outlet.
15. The radio frequency plasma device according to claim 12 or 13, characterized in that: Also includes: A supporting flange, wherein the outer tube is passed through the supporting flange; A limit block is arranged at the distal end of the outer tube, and the grounding line is passed through the limit block.
16. The radio frequency plasma device according to claim 15, characterized in that: Also includes: Sealing assembly, including: a sealing ring, sleeved on the contraction section and partially located in the expansion section of the intake inner pipe; A sealing nut is threadedly connected to the expansion section and is used to compress the sealing ring to seal the contraction section and the expansion section of the intake inner pipe.
17. The radio frequency plasma device according to claim 16, characterized in that: The outer side surface of the sealing ring includes a conical surface or an arcuate surface, and the expansion section and the sealing nut include a conical concave surface or an arcuate concave surface that matches the outer side surface of the sealing ring; and / or The sealing ring comprises pyrolytic boron nitride and / or boron nitride.
18. The radio frequency plasma device according to claim 15, characterized in that Also includes: A shielding shell is mounted on the electromagnetic field generator to shield electromagnetic signals; The ion filter is arranged at the distal end of the shielding shell and covers the distal end of the cavity of the plasma generating chamber, and is used for filtering plasma.
19. The radio frequency plasma device according to claim 15, characterized in that The plasma generating chamber further comprises: Restricted components, including: a first limiting member, sleeved on the contraction section of the plasma generating chamber; A second limiting member is provided at the distal end of the shielding shell, The first limiting member and the second limiting member cooperate to limit the plasma generated by the plasma generating chamber from moving toward the proximal end of the shielding shell.
20. A vacuum system, characterized in that: include: vacuum chamber; as well as The radio frequency plasma device according to any one of claims 1 to 19, wherein the radio frequency plasma device is at least partially disposed in the vacuum chamber and is configured to emit plasma into the vacuum chamber.
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