Fluorescence-image-based high-temperature position sensor with nitrogen vacancy (NV) centres

Abstract

The invention relates to a position sensor for the fluorescence-image-based position sensor system of at least one magnetised body (MK). The position sensor comprises a plurality of sensor elements (SE) which are arranged in one or more sensor element layers (SES). Said sensor element layer (SES) can expressly form a continuum, wherein the sensor elements can form a continuous layer of sensor elements lying directly on one another. Detection takes place via paramagnetic centres (NV), in particular NV centres in diamond crystals, which are excited by pump radiation (LB) to emit fluorescent radiation (FL). The intensities of the fluorescent radiation are optically captured by means of photodetector arrays (LSA). The magnetised body (MK) has magnetically differentiated surface regions and can move in up to six mechanical degrees of freedom. The fluorescence images are used to capture or estimate the position, orientation, curvature or distance of the body (MK) by means of computer- or machine-implemented algorithms. The position sensor is suitable in particular for high-precision position capture, even in the event of minimal movements or at a standstill, for example for applications in electric motors.

Description

[0001]© Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. Fluorescence-based high-temperature position sensor with NV centers. Field of invention: This document describes a position sensor with a sensor element layer of paramagnetic centers, which determines the position of a magnetized body by evaluating the fluorescence intensity across optical paths and photodetectors. Prior art: Document DE 10 2019 121 028 B4 discloses methods for printing pastes with diamond particles containing NV centers. In particular, DE 10 2019 121 028 B4 describes a CMOS integration of systems based on NV centers. Document DE 10 2020 129 332 A1 discloses a current measuring device and various other applications of microwave-free magnetic field sensors based on NV centers in diamond crystals.The document presented here also refers to the corresponding international patent application WO / 2021 / 089091. In particular, documents DE 10 2020 129 332 A1 and EP 4 310 458 A1 (see Figure 70 including the figure description) describe several position detection systems and the commutation of a motor. EP 3 874 343 B1 (DE 50 2019 009 586.6) discloses a magnetic field sensor system based on NV centers. This document describes a concept for extending the measuring range based on a more complex magnetic circuit. Document DE 10 2021 101 569 A1 discloses an NV center-based current sensor based on a glass substrate (PCB). Document DE 10 2020 109 477 A1 describes methods for producing diamonds with a high density of NV centers and associated quantum technology devices and methods. Document DE 10 2021 132 780 A1 claims a tilt angle detection method using HDNV diamonds.Document DE 10 2021 132 781 A1 describes the calibration of a magnetic flux density using an HDNV diamond. Document DE 10 2021 132 782 A1 describes the use of an HD-NP diamond for a quantum technology device. Document DE 10 2021 132 783 A1 describes a diamond with NV center pairs consisting of two coupled and equivalent NV centers. Document DE 10 2021 132 784 A1 describes a quantum technology device with an energy reserve and methods for its operation. Document DE 10 2021 132 785 A1 describes the serial production of a housing with a diamond and a high C. pk-value of the crystal orientation. Document DE 10 2021 132 786 A1 describes the adjustment of the direction of a magnetic field using one or more fluorescent features of an HDNV diamond. Document DE 10 2021 132 787 A1 describes a method for calibrating a magnetic flux density using a 9.5 mT fluorescent feature of an HDNV diamond. Document DE 10 2021 132 790 A1 describes a method for calibrating a magnetic flux density using a fluorescent feature of coupled pairs of non-equivalent paramagnetic centers. Document DE 10 2024 100 466.5 discloses an optical fuse with an optical current sensor based on NV centers and an optically controlled switch. Document DE 10 2022 121 444.3 discloses a device for NV-center-based detection of the magnetic flux density B in an air gap and / or in the stray field of the air gap of a motor and for its commutation.Document DE 10 2023 122 665 A1 discloses a fast, temporally and spatially high-resolution magnetic field camera. This plays a special role in the technical teaching described below. Document WO 2024 041 703 A1 discloses an improved optical waveguide with a self-aligning sensor element with NV centers and a small measurement volume, as well as methods for its fabrication and applications. Document DE 10 2023 121 633 A1 discloses a self-aligning transparent optical waveguide support substrate for NV centers. This is further disclosed in the still unpublished German patent application DE 10 2024 105 739.A measurement method for determining the fluorescence intensity of NV centers is described in Figure 4. This method is based on controlling the NV centers with a pump radiation signal featuring a sinusoidal, monofrequency intensity modulation of the pump radiation. German patent application DE 10 2024 105 739.4 describes the advantages of such a control method. A current sensor is described in the still unpublished German patent application DE 10 2024 108 878.8 dated March 27, 2024. The following text assumes familiarity with these documents. The prior art is further explained with reference to the following figures. Figure 1 shows the basic principle of a position sensor 1 based on the intensity of the fluorescence radiation FL of paramagnetic centers NV in one or more crystals of a sensor element SE. An electrical supply I0 of the pump radiation source LED feeds an electrical pump current I. pmpinto the LED electrical pump radiation source. The electrical pump current I pmp The electrical supply I0 of the pump radiation source LED serves to supply the pump radiation source LED with electrical energy. This is achieved by supplying the pump radiation source LED with electrical energy through the pump current I, which has a non-zero magnitude. pmp The electrical supply I0 of the pump radiation source LED emits pump radiation LB with a pump radiation wavelength ^. pmp The pump radiation source LED irradiates the sensor element SE with pump radiation LB at a pump radiation wavelength ^ via a first optical path in which optical functional elements may be located. pmp . Through this irradiation with pump radiation LB with a pump radiation wavelength ^ pmpThe paramagnetic centers NV in the one or more crystals of the sensor element SE emit fluorescence radiation FL of a fluorescence radiation wavelength ^. flThe paramagnetic centers typically emit fluorescence radiation FL in a statistically uniform distribution in all directions. In the example shown in Figure 1, the device in Figure 1 evaluates only the portion of the fluorescence radiation FL that exits the sensor element SE on the side facing away from the pump radiation source LED. This document refers to such a system as a transmission system. The paramagnetic centers NV of the sensor element SE thus emit their fluorescence radiation FL into a subsequent second optical path, which typically terminates at a photodetector PD or the like. A first optical filter F1 in the second optical path, or a functionally equivalent optical element, prevents the pump radiation LB from reaching the subsequent photodetector PD.The first optical filter F1 preferably enables the fluorescence radiation FL to reach the photodetector PD with minimal attenuation. Accordingly, the first optical filter F1 or the functionally equivalent optical element for electromagnetic radiation with fluorescence radiation wavelength ^. fl Essentially transparent. The term "essentially" in the context of the presence of a property means that the absence of this property is permissible to such a small degree that the function of the device and / or the fulfillment of its purpose are not impeded. Accordingly, the first optical filter F1 or the functionally equivalent 2 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown optical functional element for electromagnetic radiation with pump radiation wavelength ^ pmpEssentially not transparent. The term "essentially" in the context of a property means that the absence of this property is permissible to such a minor degree that the function of the device and / or the fulfillment of its purpose are not impeded. The first optical filter F1, or the functionally equivalent optical element, separates the fluorescence radiation FL from the pump radiation LB. The photodetector PD therefore receives essentially only fluorescence radiation FL. The term "essentially" in the context of a property means that the absence of this property is permissible to such a minor degree that the function of the device and / or the fulfillment of its purpose are not impeded.The photodetector PD converts the intensity of the received fluorescence radiation FL into a received signal S0. An amplifier AMP amplifies and / or filters the received signal S0 to produce an amplifier output signal S1. An analog-to-digital converter (ADC) converts the amplifier output signal S1 into a data value, which the ADC can then provide to a computer core (µC), for example, via an internal data bus DB. The computer core (µC) can further process this data and / or make it available to higher-level computer systems via an external data bus (EXTDB). The computer core (µC) preferably executes computer-implemented methods for processing the data values ​​from the ADC. The program code for these methods is stored, at least temporarily, in a memory (MEM) of the device and is executed by the computer core (µC) when these computer-implemented methods are carried out.Preferably, the microcontroller (µC) also controls other device elements, such as the electrical supply I0 of the pump radiation source LED. The microcontroller preferably communicates with other computer systems, particularly one or more higher-level computer systems, via the internal data bus DB, a data bus interface IF, and the external data bus EXTDB. Preferably, the circuits of the amplifier (AMP), the analog-to-digital converter (ADC), the data bus interface IF, the microcontroller (µC), and one or more memory modules (MEM) are integrated circuits (ICs). The memory modules (MEM) can include volatile memory such as DRAMs or RAMs and non-volatile memory such as EEPROMs, OTP circuits, or flash memory.Furthermore, the integrated circuit can include other important sub-circuits for its operation, such as, but not limited to, residual circuits, voltage regulators, voltage references, current references, voltage converters, charge pumps, clock generators, buffers for distributing important signals like clocks, digital-to-analog converters, modulators, PWM generators, test circuits (e.g., JATAG TAPCs), debugging interfaces for programming the microcontroller core, etc. Since these are not essential for understanding the concept, they have been omitted from Figure 1. It is also conceivable that one or more device components of the integrated circuit (IC) could temporally modulate the intensity of the pump radiation emission (LB) by the pump radiation source (LED) using a modulation signal.For example, the integrated circuit (IC) can temporally modulate the intensity of the pump radiation LB emission by the pump radiation source LED using a spreading code or a modulation frequency. Temporal modulation of the intensity of the pump radiation LB emission by the pump radiation source LED using a sinusoidal, monofrequency temporal modulation of the intensity of the pump radiation LB emission by the pump radiation source LED is particularly preferred. The integrated circuit then preferably determines the proportion of the modulation signal in the received signal S0 by correlating the modulation signal used for intensity modulation with the received signal S0 of the photodetector PD (3 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown) or by using a signal derived from the received signal S0 of the photodetector PD.Preferably, the integrated circuit (IC) uses this component to determine a measured value for the physical quantity that influences the intensity of the fluorescence radiation FL by affecting the paramagnetic centers NV of the sensor element SE. The computer core (µC) preferably uses this method to determine, in the form of a measured value, the degree of attenuation of the fluorescence radiation FL by external physical parameters, for example, the magnitude of the magnetic flux density B acting on the paramagnetic centers NV in the sensor element SE. For position determination, a magnetized body MK then acts on the paramagnetic centers NV of the sensor element SE by means of the magnetic flux density B caused by its magnetization. This changes the intensity of the fluorescence radiation FL emitted by the paramagnetic centers NV of the sensor element SE.This allows the physical parameter of the position PMK of the magnetized body MK relative to the position PSE of the sensor element SE to influence the intensity of the fluorescence radiation FL of the sensor element SE. The magnetized body MK is preferably not homogeneously magnetized, but can, for example, have several identically or differently magnetized areas. This enables the device to deduce the position of the magnetized body MK relative to the sensor element SE by evaluating the intensity of the fluorescence radiation FL. Typically, this also enables the device to deduce the movement BR of the magnetized body MK relative to the sensor element SE by evaluating the temporal intensity profile of the fluorescence radiation FL.This allows the computer core (µC) of the integrated circuit (IC) to infer the position and / or position range of a magnetized body (MK) relative to the position (PSE) of the sensor element (SE) by executing the corresponding program code of a computer-implemented procedure in its memory (MEM). Figure 2 shows the system of Figure 1 as a reflection system. A mirror (MI), an example of an optical functional element in the first optical path, directs the fluorescence radiation (FL) onto the dichroic mirror (DM). The dichroic mirror (DM) is designed here, by way of example, to reflect pump radiation (LB) of the pump radiation wavelength (^). pmp reflected and fluorescence radiation FL of the fluorescence wavelength ^ fl The dichroic mirror DM of Figure 2 thus fulfills the purpose of separating the fluorescence radiation FL and the pump radiation LB, a task performed by the first optical element F1 in the example of Figure 1. A back mirror BM reflects the portion of the pump radiation LB and the fluorescence radiation FL back into the sensor element SE, allowing them to exit the sensor element SE again in the direction of the photodetector PD. This increases the signal-to-noise ratio. Experiments have shown that the basic arrangement of Figure 2 is superior to that of Figure 1 in most applications. Nevertheless, the arrangements of Figures 1 and 2 represent two fundamentally similar solutions, which the expert will recognize in all subsequent figures.Figure 3 shows the intensity of the fluorescence FL of the NV centers NV, which serve as paramagnetic centers NV in the diamond, as a function of the magnetic flux density B acting on the paramagnetic centers NV, here the NV centers NV in the diamond. This is a single crystal of diamond. In this example, the axes of the NV centers NV are aligned parallel to the direction of the magnetic flux density B. This results in characteristic dips in the intensity profile. The use of the E0,0,0 point is typically independent of the diamond's orientation.4 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown Figure 4 The need to align the diamonds when utilizing the dependence of the intensity of the fluorescence radiation from the NV centers on the magnetic flux density led to the development of a sensor element SE with a multitude of crystals with paramagnetic centers that exhibit a spatially uniform orientation. This smooths the curve in Figure 3. Such a smooth curve is easier to use for measurement purposes in control engineering. Figure 5 Figure 5 shows an arrangement in which the housing of an NVMS sensor system includes, in addition to the integrated circuit IC, the photodetector PD, the first filter F1, the sensor element SE, the pump radiation source LED, and the necessary optical functional elements and lines.In the example shown in Figure 5, four sensor systems NVMS are provided that detect a magnetized body MK and thus enable the determination of the position of this magnetized body MK relative to the sensor systems (NVMS1, NVMS2, NVMS3, NVMS4) after a translational displacement and / or thus enable the determination of a translational movement of this magnetized body MK relative to the sensor systems (NVMS1, NVMS2, NVMS3, NVMS4). Figure 6 also shows an arrangement in which the housing of a sensor system NVMS includes, in addition to the integrated circuit IC, the photodetector PD, the first filter F1, the sensor element SE, and the pump radiation source LED, as well as the necessary optical functional elements and lines.In the example shown in Figure 6, three sensor systems NVMS are provided, each detecting the rotational position of an associated magnetized body MK, which is rotatable about a common axis of rotation AX. This allows the conclusion to be drawn about the rotation angle of the common axis AX of these magnetized bodies MK relative to the sensor systems (NVMS1, NVMS2, NVMS3) after a rotational rotation about the axis AX, and / or about a rotational movement of these magnetized bodies MK about the common axis of rotation AX relative to the sensor systems (NVMS1, NVMS2, NVMS3, NVMS4). Preferably, the magnetic coding of the magnetized bodies MK is different.Preferably, the magnetic encoding of the magnetized bodies MK is magnetized differently with a magnetization amplitude that depends on the position angle of the respective magnetization on the respective magnetized body. The magnetization amplitudes of the different magnetized bodies MK preferably depend in different ways on the respective position angle of the respective magnetization on the respective magnetized body. The magnetization amplitudes of the different magnetized bodies MK preferably depend in different ways on the respective position angle of the respective magnetization, preferably with a respective position angle frequency on the respective magnetized body. The disadvantage of the resolvers of Figures 5 and 6 is that the microintegrated electronic circuit must be located very close to the respective magnetized body.This negates galvanic and thermal isolation. The objective of this proposal is therefore to create a solution that does not exhibit the aforementioned disadvantages of the prior art and offers further advantages. A device according to claim 1 solves this problem. Specific embodiments are the subject of the dependent claims, the description, and the figures. 5 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. Solution to the Problem: A position sensor is provided for fluorescence-image-based position sensing of a magnetized body (MK). This has the purpose of being able to detect the position and / or movement of a magnetized body (MK) with high precision and spatial resolution. The position sensor comprises a plurality of n sensor elements (SE) of one or more sensor element layers (SES), where n is chosen as a positive integer greater than 1.This has the advantage that planar or volumetric coverage can be provided for capturing the fluorescence signals, enabling detailed location-dependent analysis. The position sensor comprises a magnetized body (MK). This serves to generate a spatially variable, detectable magnetic pattern that can be detected by the sensor elements (SE). The position sensor includes a sensor measurement system (SMS). This serves to capture and further process the fluorescence signals generated by the sensor elements (SE). The sensor measurement system (SMS) comprises one or more photodetector arrays (LSAs). This has the advantage that the intensity distribution of the fluorescence radiation (FL) can be detected simultaneously across multiple detection points, thus achieving high spatial resolution of the signal acquisition.The position sensor has one or more optical transmission paths between the sensor elements (SE) of the one or more sensor element layers (SES) and the one or more photodetector arrays (LSA) of the sensor measurement system (SMS). This serves to transmit the optical fluorescence signal to the photodetector arrays (LSA) with low loss and positional accuracy. The magnetized body (MK) has several differently magnetized regions (MB) on at least one of its surfaces and / or one or more regions (MB) on at least one of its surfaces that are not magnetized or significantly less magnetized than other regions of that surface and / or one or more separate, locally confined magnetized regions (MB) on at least one of its surfaces.This has the advantage of producing a detectable magnetic pattern that enables the position determination or motion tracking of the magnetized body (MK) via its magnetic field. The magnetized body (MK) has one, two, three, four, five, or six mechanical degrees of freedom, which can be translational or rotational. The purpose of this is to detect changes in the position of the magnetized body (MK) in one or more spatial degrees of freedom, thereby making complex movements measurable.The position sensor is configured to detect or estimate one, two, or three translational displacements of the magnetizable body (MK) relative to a reference position as a respective measurement, and / or to detect or estimate one, two, or three rotational rotations of the magnetizable body (MK) relative to a reference position as a respective measurement, one, two, or three angles (Euler's angles) as a respective measurement, and / or to detect or estimate the position and orientation of at least one, two, or three axes of rotation of the magnetizable body (MK) for one, two, or three corresponding rotations about the one, two, or three angles (Euler's angles) about these one, two, or three axes of rotation of the magnetizable body (MK) as a respective measurement, and / or to detect or estimate one or two curvatures of the surface of the magnetizable body (MK) as a respective measurement.This has the advantage of enabling complete three-dimensional motion and shape tracking of the magnetizable body (MK). 6 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. The sensor elements (SE) of the one or more sensor element layers (SES) comprise crystals with paramagnetic centers (NV), in particular diamond crystals with NV centers (NV). This serves to generate fluorescence radiation (FL) depending on the local magnetic field, thereby enabling field-dependent optical detection. The sensor elements of each of at least one sensor element layer (SES) of the one or more sensor element layers (SES) each form a closed sensor element layer (SES), in which the sensor elements can then be described by detection areas of the one or more photodetector arrays (LSA).This has the advantage that a uniform and comprehensive optical readout of the sensor elements is possible. The position sensor is configured to irradiate the paramagnetic centers (NV) with pump radiation (LB). This serves to excite the NV centers so that they subsequently emit fluorescence radiation (FL). As a result of this irradiation with pump radiation (LB), the paramagnetic centers (NV) of the respective sensor elements (SE) of the respective one or more sensor element layers (SES) emit fluorescence radiation (FL) with a sensor element-specific intensity (I(FL(t))). This has the advantage that the intensity of the fluorescence radiation (FL) is a measurable quantity that correlates with the local magnetic field and can therefore be used for field and position determination.The position sensor is configured to detect a specific fluorescence radiation (FL) with a specific intensity (I(FL(t))) from the corresponding detection areas of the sensor element layer and to determine one or more fluorescence images of the magnetized body (MK). The purpose of this is to generate an image of the magnetic pattern of the magnetized body (MK) from the spatially resolved fluorescence radiation (FL) and to extract measurement data from it.The position sensor is configured to acquire, calculate, and / or estimate the above-mentioned measured values ​​and / or position data based on one or more of the fluorescence images thus captured, using computer- and / or machine-implemented methods and / or algorithms, and to output, use, or store this data in a higher-level system. This has the advantage that the acquired or calculated position data can be used directly for the regulation or control of technical processes, particularly in the control of motion systems or the monitoring of positions in real time. First Variant: In the first variant of the position sensor, the magnetized body (MK) has one or two curvatures on at least one surface or on one or more surfaces of the one or more surfaces. This serves the purpose of...The advantage is that the curvature of the magnetized body's (MK) surface allows for additional geometric differentiation of the magnetic field pattern, which, particularly in combination with the fluorescence images, enables improved and more unambiguous position and orientation detection of the magnetized body (MK). Second variant: In the second variant of the position sensor, one or more measured values ​​depend on the respective intensity of the respective fluorescence radiation (FL) of the respective parametric centers of one or more respective sensor elements (SE1, SE2, SE3) of the one or more sensor element layers (SES). This serves the purpose of...the advantage that the spatially resolved fluorescence intensity is used as a primary signal to draw conclusions about the local magnetic field strength and thus about the position and / or orientation of the magnetized body (MK). Furthermore, one or more measured values ​​depend on the respective phase shift of the respective temporal intensity profile (I(FL(t))) of the respective intensity of the respective fluorescence radiation (FL1, FL2, FL3, FL) of one or more respective sensor elements (SE1, SE2, SE3) of the one or more sensor element layers (SES) relative to the respective transmit signal of the respective pump radiation source (LED, LED1, LED2, LED3) of the respective sensor element (SE, SE1, SE2, SE3) of the one or more sensor element layers (SES). This has the purpose orThe advantage is that by evaluating the temporal phase relationship between excitation and emission, an additional, information-rich measurement parameter is available, enabling a more precise and noise-insensitive determination of the position parameters of the magnetized body (MK). Third variant: In the third variant of the position sensor, the position sensor is configured to control and / or regulate the current flow to one or more stator coils (SL1, SL2, SL2, SL) of an electric motor and / or several rotor coils of the electric motor depending on one or more acquired fluorescence images and / or images derived from them. This serves the purpose of...The advantage is that direct and precise adjustment of the electric motor's control is enabled in real time, with the control based on the position or orientation information of the magnetized body (MK) obtained from fluorescence images. This allows for improved positioning accuracy and system dynamics, especially at low speeds or when stationary. Fourth Variant: In the fourth variant of the position sensor, the position sensor is preferably configured to regulate or control the current flow to one or more stator coils (SL1, SL2, SL2, SL) of an electric motor and / or several rotor coils of the electric motor based on these acquired or estimated measured values. This has the purpose and advantage that the regulation or control of the electric motors can be directly aligned with precise orientation or motion data of the magnetized body (MK), allowing for improved drive dynamics and energy efficiency.The position sensor can further be configured to regulate or control the current flow to the aforementioned coils depending on the respective intensity of the fluorescence radiation (FL, FL1, FL2, FL3) emitted by the parametric centers of one or more sensor elements (SE, SE1, SE2, SE3). This has the purpose and advantage of using the fluorescence intensity as a direct measure of the magnetic field-dependent interaction, thus enabling highly sensitive control.Additionally, the position sensor can be configured to regulate or control the current flow to the aforementioned coils depending on the respective phase shift of the respective temporal intensity profile (I(FL(t))) of the respective intensity of the respective fluorescence radiation (FL1, FL2, FL3, FL) relative to the respective transmit signal of the respective pump radiation source (LED, LED1, LED2, LED3) of the respective sensor element (SE, SE1, SE2, SE3) with respect to one or more sensor elements (SE, SE1, SE2, SE3). This has the purpose or advantage that dynamic signal changes can also be taken into account, thus enabling a particularly sensitive and precise adjustment of the motor control. Fifth Variant: In the fifth variant of the position sensor, the magnetizable body (MK) comprises a hard magnetic material according to DIN IEC 60404-8-1:2003-02. This has the purpose or advantage thatthe advantage that the use of a hard magnetic material specified according to standards ensures a stable and 8 / 89 © Elmos Semiconductor SE, IP‐Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown reproducible magnetization of the magnetizable body (MK), which can improve the long-term stability and reliability of the position sensor, especially under industrial operating conditions. Sixth Variant: In the sixth variant of the position sensor, the magnetizable body (MK) preferably comprises a hard magnetic material with a Curie temperature greater than or equal to 310°C and / or greater than or equal to 450°C and / or greater than or equal to 620°C and / or greater than or equal to 640°C and / or greater than or equal to 720°C and / or greater than or equal to 750°C and / or greater than or equal to 800°C and / or greater than or equal to 820°C and / or greater than or equal to 850°C. This serves the purpose of...The advantage is that the magnetizable body (MK) retains its magnetic properties even at high ambient temperatures, such as those that can occur particularly in industrial applications or in the field of electric motors, thus ensuring the continued functionality of the position sensor. It is particularly preferred that the Curie temperature of this hard magnetic material is higher than the maximum permissible temperature of the device in which the position sensor is used or is intended to be used, as specified in the design. This has the purpose and advantage of reliably preventing thermally induced demagnetization of the magnetizable body (MK), thereby increasing the long-term stability and reliability of the position sensor even under extreme thermal operating conditions.Seventh Variant: In the seventh variant of the position sensor, the optical fiber (OF, OF1, OF2, OF3) and / or an imaging optic (AO) are integrated into the optical transmission path to optically couple the respective sensor elements (SE, SE1, SE2, SE3) of one or more sensor element layers (SES) with their respective photodetectors (PD, PD1, PD2, PD3) of one or more photodetector arrays (LSAs). This has the purpose and advantage of enabling the optical signals generated by the fluorescence radiation (FL) to be transmitted to the corresponding photodetectors (PD, PD1, PD2, PD3) with low loss and efficiency, thereby improving signal quality, increasing the signal-to-noise ratio, and enabling precise detection even with complex geometries or confined installation conditions.Eighth Variant: In the eighth variant of the position sensor, the optical fiber (OF, OF1, OF2, OF3) is a high-temperature fiber optic cable, particularly for thermal insulation, which allows operating temperatures at its second end (end of the sensor element SE) above 250°C. This has the purpose and advantage that optical signal transmission can occur reliably even in thermally stressed environments without thermally induced signal loss or material degradation of the optical fiber. This makes the position sensor suitable for use in high-temperature areas, such as near motors, turbines, or industrial furnaces. This allows the electric motors to be operated until they are red-hot, provided the cable insulation does not fail beforehand.Ninth Variant: In the ninth variant of the position sensor, the optical fiber (OF, OF1, OF2, OF3) can comprise a fused silica fiber (T>200°C allowed). This has the purpose and advantage of ensuring stable optical signal transmission even at elevated temperatures, while simultaneously being mechanically and chemically resistant. 9 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. Furthermore, the optical fiber (OF, OF1, OF2, OF3) can comprise a sapphire glass fiber (T>200°C allowed). This has the purpose and advantage of achieving extremely high temperature and scratch resistance as well as high transparency in the visible and near-infrared ranges, thus ensuring the quality of signal transmission even under extreme environmental conditions.Furthermore, the optical fiber (OF, OF1, OF2, OF3) can comprise an optical fiber made of aluminum-doped glass (T>>several hundred degrees Celsius). This has the purpose and advantage of significantly increasing the thermal resistance of the optical fiber compared to conventional glass, thus ensuring consistent performance even during prolonged high-temperature operation. Alternatively, the optical fiber (OF, OF1, OF2, OF3) can comprise an optical fiber made of yttrium aluminum garnet (YAG). This has the purpose and advantage of combining exceptionally high temperature resistance with excellent optical quality, making the position sensor suitable for applications with extremely high demands on temperature, mechanical stress, and optical precision.Tenth Variant: In the tenth variant of the position sensor, the position sensor is configured to determine or detect the distance between a magnetized body (MK) or parts of a body (MK) and a sensor element layer (SES) using a computer- and / or machine-implemented method and / or algorithm. This has the purpose and advantage of enabling contactless and precise distance measurement between the magnetized body (MK) and the sensor element layer (SES), thereby reducing wear, allowing continuous real-time monitoring of the relative position, and, in particular, enabling the automatic and highly accurate detection of dynamic changes in the distance.Eleventh Variant: In the eleventh variant of the position sensor, the position sensor can be configured to generate at least one of the following images, or at least an image derived from these images, using computer- and / or machine-implemented methods and / or algorithms. This has the purpose and advantage of enabling automated, objective, and reproducible evaluation of the fluorescence signals detected by the sensor element layer (SES), allowing for a detailed analysis of the magnetic and geometric properties of the magnetized body (MK). The position sensor can be configured to generate a fluorescence image of the location-dependent fluorescence intensity of the fluorescence radiation (FL) with the fluorescence wavelength (λ). flto generate a fluorescence emitted by the sensor element layer (SES) via the paramagnetic centers (NV) within the SES. This has the purpose and advantage of allowing the magnetic field to be indirectly mapped via the spatially resolved fluorescence intensity. Furthermore, the position sensor can be configured to generate a fluorescence image of the spatially modulated fluorescence radiation (FL) of the sensor element layer (SES) in the wavelength range corresponding to the fluorescence wavelength (λ). fl) to generate. This has the purpose or advantage that additional information such as field gradients or time-dependent effects can be captured via modulation. The position sensor can also be configured to generate a magnetic flux density magnitude image of the magnetic flux density field passing through the sensor element layer (SES). This has the purpose or advantage that the distribution and intensity of the magnetic field can be quantitatively visualized. Furthermore, the position sensor can be configured to generate an enhanced fluorescence image and / or an enhanced magnetic flux density magnitude image of the magnetic flux density field in the sensor element layer (SES). This has the purpose or advantage of improving image quality through computer- and / or machine-implemented algorithms such as noise reduction, contrast enhancement, or 10 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknownto increase resolution improvement. The position sensor can also be configured to generate a one-, two-, or three-dimensional representation of the magnetic flux density distribution, particularly in the sensor element layer (SES). This has the purpose and advantage of spatially representing the three-dimensional geometry and orientation of the magnetic field. Furthermore, the position sensor can be configured to generate a magnetization pattern of the magnetized areas on the surface of the magnetized body (MK). This has the purpose and advantage of allowing inferences about the functional structure of the body (MK) or its manipulation. The position sensor can also be configured to generate a magnetization pattern of the magnetized areas on the surface of the magnetized body (MK) that is shifted and / or rotated relative to the position of the sensor element layer (SES). This has the purpose and advantage ofto detect changes in the position or orientation of the body (MK) relative to the sensor element layer (SES). In addition, the position sensor can be configured to generate and / or acquire a blurred fluorescence image. This has the purpose or advantage of, for example, deriving depth information by targeted evaluation of the defocusing or blurring of the image. In this case, the position sensor is preferably configured to generate and / or evaluate and / or use and / or store and / or output one or more gradient fluorescence images by deriving the local fluorescence intensity of one or more fluorescence images and / or one or more images derived from them, using computer- and / or machine-implemented methods. The position sensor can also be configured to generate a fluorescence partial image of the aforementioned image types. This has the purpose or advantage of targetedto extract image sections for focused analysis. The position sensor can also be configured to generate a contrast image (fluorescence contrast image). This serves the purpose and / or has the advantage of facilitating the visual separation of different magnetic areas. Likewise, the position sensor can be configured to generate one or more distance images, among other things, from one or more fluorescence images and / or images derived therefrom. This serves the purpose and / or has the advantage of visually determining the height or distance between the sensor element layer (SES) and the magnetized body (MK). If the multiple distance images are acquired at different times, the position sensor can be configured to generate multiple distance images with different respective timestamps for the acquisition of the underlying fluorescence images, using computer- and / or machine-implemented methods and / or algorithms.For example, by pixel-wise one or more derivatives with respect to time, one or more velocity images and / or one or more acceleration images can be generated and / or stored in a memory of the device and / or kept ready and / or output and / or used. The position sensor can additionally be configured to generate a fluorescence image of the magnetized body (MK). This has the purpose and advantage of representing the spatial position and magnetic properties of the entire body (MK) in a single image. Finally, the position sensor can be configured to generate a fluorescence contrast image of one or more magnetized bodies (MK). This has the purpose and advantage of improving the differentiation between different magnetized bodies (MK) or their regions and thus facilitating evaluation. 11 / 89 © Elmos Semiconductor SE,IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. Twelfth Variant: In the twelfth variant of the position sensor, for example, it is provided that one or more images of the image types of the twelfth variant specified above and / or images of fluorescence patterns are stored in a memory of the device. This has the purpose or advantage of enabling a time-delayed or repeated analysis of the recorded image data, thereby allowing both continuous system monitoring and subsequent error analysis, quality assurance, or pattern recognition. In addition, the storage of the fluorescence images allows for the reconstruction of position trajectories or the optimization of machine learning processes by providing a structured data set. Thirteenth Variant: In the thirteenth variant of the position sensor, a computer system (RSYS) of the device is preferably provided, which is operated by means of a computer-and / or machine-implemented methods, whose program code resides at least temporarily in one or more memory locations of the device, generate one of the above images based on one or more fluorescence images. This has the purpose and advantage of enabling automated and programmatically controllable image processing and analysis, thereby allowing the efficient generation of meaningful data formats for further processing. The computer system (RSYS) is also preferably configured to store these images in the device's memory. This has the purpose and advantage of ensuring local availability for repeated access, e.g., for quality assurance or trend analysis. Additionally, the computer system (RSYS) is preferably configured to output the images. This has the purpose and advantage of allowing the results to be visualized directly via user interfaces or used for further analysis.external evaluation can be used. Furthermore, the computer system (RSYS) is preferably configured to transfer the images to another system and / or computer system. This has the purpose or advantage that the data can be integrated into higher-level control, regulation, or analysis systems and used for distributed processing concepts. Fourteenth Variant In the fourteenth variant of the position sensor, the computer- and / or machine-implemented methods preferably comprise one or more of the following computer- and / or machine-implemented methods. This has the purpose or advantage that the fluorescence images and measurement data acquired or generated by the position sensor can be analyzed, interpreted, and further processed using advanced, adaptive, and powerful computing methods, thereby achieving a particularly precise, robust, and context-dependent evaluation. The computer-The methods and / or machine-implemented procedures can include computer- and / or machine-implemented machine learning and artificial intelligence methods. This has the purpose and / or advantage of enabling the automated recognition and dynamic evaluation of patterns in the image data. The methods can also include computer- and / or machine-implemented regression methods. This has the purpose and / or advantage of enabling the prediction of continuous, quantitative relationships, such as distances or angles, from the image data. Additionally, the methods can include computer- and / or machine-implemented classification methods. This has the purpose and / or advantage of enabling the differentiation and assignment of different feature classes in the image material, such as various states of motion. The methods can include computer-implemented and / or machine-implemented neural networks (ANNs). This has the purpose and / or advantage of enabling the prediction of continuous, quantitative relationships, such as distances or angles, from the image data.the advantage that complex nonlinear relationships in large datasets can be captured and processed. 12 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. Furthermore, the methods can include computer-implemented and / or machine-implemented Convolutional Neural Networks (CNNs). This has the purpose and advantage of enabling the efficient and high-accuracy analysis of image data, particularly for the extraction of spatial features from fluorescence images. The methods can also include computer-implemented and / or machine-implemented Recurrent Neural Networks (RNNs). This has the purpose and advantage of allowing temporal dependencies in image sequences or measurement series to be modeled and used for trend estimation. Similarly, computer-implemented and / or machine-implemented Generative Adversarial Networks (GANs) can be used. This has the purpose and advantage thatRealistic image data can be generated or completed, for example, to improve image quality or to expand the data. The methods can also include computer-implemented and / or machine-implemented Deep Belief Networks (DBNs). This has the purpose and advantage of enabling the extraction of complex, hierarchically structured features from the input data. Additionally, computer-implemented and / or machine-implemented autoencoders can be provided. This has the purpose and advantage of reducing redundant image information and allowing relevant image features to be displayed in a compressed format. The methods can also include computer-implemented and / or machine-implemented Support Vector Machines (SVMs). This has the purpose and advantage of enabling the reliable recognition of clearly separable feature patterns in high dimensions. Furthermore, computer-implemented and / or machine-implementedDecision trees and / or computer-implemented and / or machine-implemented random forests are used. This has the purpose and advantage of enabling robust, explainable classifications based on multiple decision rules. Furthermore, computer-implemented and / or machine-implemented ensemble methods of computer-implemented and / or machine-implemented machine learning can be employed. This has the purpose and advantage of increasing the accuracy and robustness of the evaluation by combining multiple learning models. The methods can also include computer-implemented and / or machine-implemented clustering algorithms. This has the purpose and advantage of enabling the detection of unsupervised structures or groupings in image or measurement data. Additionally, computer-implemented and / or machine-implemented pattern recognition methods can be used.or the advantage that recurring magnetic or geometric structures can be automatically identified. Furthermore, computer-implemented and / or machine-implemented feature extraction methods can be used. This has the purpose and advantage of enabling the targeted and automated extraction of image features essential for further processing. Additionally, computer-implemented and / or machine-implemented Long Short-Term Memory Networks (LSTM) can be employed. This has the purpose and advantage of enabling the recognition and processing of time-delayed relationships in data series, such as those occurring during dynamic movements of the magnetized body (MK). The methods can also include computer- and / or machine-implemented neural network models and / or other machine learning (deep learning) techniques. This has the purpose and advantage of enabling the analysis of highly complex data.Relationships between image data and physical parameters can be modeled and used for diagnostic and control purposes. This can also include computer- and / or machine-implemented methods for determining the displacement (MK) and / or rotation (MK) of the magnetized body. This has the purpose and advantage of allowing the extraction of precise motion information, which is crucial for controlling or analyzing technical processes. Fifteenth variant: In the fifteenth variant of the position sensor, the position sensor is preferably configured to determine the position of a rotor (as a magnetized body (MK)) relative to the stator of an electric motor at standstill and / or at rotational speeds of less than 2π / min and / or less than 0.2π / min and / or less than 0.02π / min and / or less than 0.002π / minand / or less than 0.0002π / min and / or less than 0.0002π / min and / or less than 0.00002π / min and / or less than 0.000002π / min and / or less than 10⁻⁷·2π / min and / or less than 10⁻⁸·2π / min and / or less than 10⁻⁹·2π / min. This has the purpose and advantage that precise position determination is possible even with extremely slow or completely stationary rotor movement, which is of crucial importance, especially for applications with high accuracy requirements in rotor position, such as the so-called sensorless starting of electric motors or control processes in the micro-radius range. This enables high-resolution, non-contact, and dynamics-independent position monitoring. Sixteenth variant: In the sixteenth variant of the position sensor, the position sensor is preferably configured to measure the rotational speed of a rotor (as a magnetized body (MK)) relative to a sensor element (SE) at rotational speedsto detect values ​​smaller than 2π / min and / or smaller than 0.2π / min and / or smaller than 0.02π / min and / or smaller than 0.002π / min and / or smaller than 0.0002π / min and / or smaller than 0.00002π / min and / or smaller than 0.000002π / min and / or smaller than 10⁻⁷·2π / min and / or smaller than 10⁻⁸·2π / min and / or smaller than 10⁻⁹·2π / min. This has the purpose and advantage that the rotor's rotational speed can be determined with high accuracy and temporal resolution even in the quasi-static range or during extremely slow movement, making the position sensor particularly suitable for sensitive control or starting processes of electric motors, as well as for applications with high demands on positional stability and motion precision. Further description of the environment: This document thus describes a position sensor for high-temperature applications comprising a plurality of n sensor elements (SE). Here, n is preferably a positive integer greater than 1.A position sensor comprises a magnetized body (MK) and a sensor measurement system (SMS). The sensor measurement system (SMS) comprises one or more photodetectors (PD) and / or one or more photodetector arrays (LSA) and one or more optical transmission links between the sensor elements (SE) and the one or more photodetectors (PD) and / or the one or more photodetector arrays (LSA) of the sensor measurement system (SMS). The magnetized body (MK) typically has one or more differently magnetized regions (MB) on at least one of its surfaces and / or one or more regions (MB) that are not magnetized or are significantly less magnetized than other regions of that surface on at least one of its surfaces and / or one or more separate, locally confined magnetized regions (MB) on at least one of its surfaces. The magnetized body (MK) also typically has aone or two or three or four or five or six mechanical degrees of freedom. The degrees of freedom can be translational or rotational. The position sensor is typically configured to detect or estimate one, two, or three translational displacements of the magnetizable body (MK) relative to a reference position as a measured value, and / or to detect or estimate one, two, or three rotational rotations of the magnetizable body (MK) relative to a reference position as a measured value, and / or to determine the position and orientation of at least one, two, or three rotational axes of the magnetizable body (MK) relative to a reference position as a measured value, one, two, or three angles (Euler's angles) as a measured value, and / or to determine the position and orientation of at least one, two, or three rotational axes of the magnetizable body (MK) forTo detect or estimate one, two, or three corresponding rotations about one, two, or three angles (Euler angles) about these one, two, or three rotation axes of the magnetizable body (MK) as respective measured values, and / or to detect or estimate one or two curvatures of the surface of the magnetizable body (MK) as respective measured values. This has the advantage that not only translational displacements can be detected. The essential means for this is a contrast evaluation of the signals of the detected magnetic flux densities in different areas of one or more sensor element layers (SES) or several separate sensor elements (SE). Here, one or more sensor elements (SE) of the sensor elements (SE) or one or more sensor element layers (SES) comprise crystals with paramagnetic centers (NV), in particular diamond crystals with NV centers (NV). The use of other paramagnetic centers such asThe use of SiV centers, TR1 centers, PbV centers, GeV centers, etc. in diamond is conceivable. The use of other paramagnetic centers in materials other than diamond is also conceivable. The position sensor is preferably configured to detect the paramagnetic centers (NV) with at least one pump radiation (LB) of at least one pump radiation wavelength (^ pmpThe paramagnetic centers (NV) of the respective sensor elements (SE) or of one or more sensor element layers (SES) emit fluorescence radiation (FL) with a sensor element-specific intensity (I(FL(t))) as a result of such irradiation with pump radiation (LB). The position sensor is preferably configured to detect and evaluate the fluorescence radiation (FL) with a sensor element-specific intensity (I(FL(t))) and, depending on the detected sensor element-specific intensity (I(FL(t))) of the fluorescence radiation (FL), to acquire and / or estimate the measured values ​​specified above and to transmit, use, or store them in a higher-level system.First sub-variant: In a first sub-variant of the proposed position sensor, the magnetized body (MK) has, for example, one or two curvatures on at least one surface or on one or more surfaces. The advantage is that the magnetizable body allows, for example, the detection of the distance along the Z-axis. More on this later.Second Sub-Variant: In a second sub-variant of the proposed position sensor, one or more measured values ​​preferably depend on the respective intensity of the respective fluorescence radiation (FL) of the respective parametric centers of one or more respective sensor elements (SE1, SE2, SE3) and / or the respective phase shift of the respective temporal intensity profile (I(FL(t))) of the respective intensity of the respective fluorescence radiation (FL1, FL2, FL3, FL) relative to the respective transmit signal of the respective pump radiation source (LED, LED1, LED2, LED3) of the respective sensor element (SE, SE1, SE2, SE3). This is particularly advantageous when using the rotor of a motor as a magnetized body (MK), as this allows, for example, position determination of the rotor and thus more precise commutation of the motor coils.Determining the rotor position is particularly advantageous at a rotor rotation speed of less than 10 rpm and / or better less than 5 rpm and / or better less than 2 rpm and / or better less than 1 rpm and / or better less than 0.5 rpm and / or better less than 15 / 89 © Elmos Semiconductor SE, IP‐Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown 0.2 rpm and / or better less than 0.1 rpm and / or better less than 0.05 rpm and / or better less than 0.02 rpm and / or better less than 0.01 rpm and / or better less than 0.005 rpm and / or better less than 0.002 rpm and / or better less than 0.001 rpm and / or better less than 5*10. ‐4 RPM and / or preferably less than 2*10 ‐4 RPM and / or preferably less than 1 * 10 ‐4 RPM and / or preferably less than 5*10 ‐5 RPM and / or preferably less than 2*10 ‐5 RPM and / or preferably less than 1 * 10 ‐5 RPM and / or preferably less than 5*10 ‐6RPM and / or preferably less than 2*10 ‐6 RPM and / or preferably less than 1 * 10 ‐6 RPM and / or preferably less than 5*10 ‐7 RPM and / or preferably less than 2*10 ‐7 RPM and / or preferably less than 1 * 10 ‐7 RPM Third^Subvariant^ In a third subvariant of the proposed position sensor, the position sensor is, for example, configured to regulate or control the current flow to one or more stator coils (SL1, SL2, SL2, SL) of an electric motor with stator coils depending on these measured values ​​or estimated values ​​and / or depending on the respective intensity of the respective fluorescence radiation (FL, FL1, FL2, FL3) of the respective parametric centers of one or more respective sensor elements (SE, SE1, SE2, SE3) and / or the respective phase shift of the respective temporal intensity profile (I(FL(t))) of the respective intensity of the respective fluorescence radiation (FL1, FL2, FL3, FL) relative to the respective transmit signal of the respective pump radiation source (LED, LED1, LED2, LED3) of the respective sensor element (SE, SE1, SE2, SE3) with respect to one or more sensor elements (SE, SE1, SE2, SE3).This has the advantage of commutation of the current supply to the stator coils of the electric motor based on the flux density in the air gap of the electric motor.Fourth^Subvariant^ In a fourth subvariant of the proposed position sensor, the position sensor is, for example, configured to regulate or control the current flow to one or more rotor coils of an electric motor with rotor coils depending on these measured values ​​or estimated values ​​and / or depending on the respective intensity of the respective fluorescence radiation (FL, FL1, FL2, FL3) of the respective parametric centers of one or more respective sensor elements (SE, SE1, SE2, SE3) and / or the respective phase shift of the respective temporal intensity profile (I(FL(t))) of the respective intensity of the respective fluorescence radiation (FL1, FL2, FL3, FL) relative to the respective transmit signal of the respective pump radiation source (LED, LED1, LED2, LED3) of the respective sensor element (SE, SE1, SE2, SE3) with respect to one or more sensor elements (SE, SE1, SE2, SE3).This has the advantage of commutation of the current supply to the rotor coils of the electric motor based on the flux density in the air gap of the electric motor. Fifth sub-variant: In a fifth sub-variant of the proposed position sensor, the magnetizable body comprises a hard magnetic material according to DIN IEC 60404-8-1:2003-02. This has the advantage that the coding by the magnetization pattern on the surface of the magnetized body (MK) does not disappear as easily. Sixth sub-variant: In a sixth sub-variant of the proposed position sensor, the magnetizable body comprises a hard magnetic material with a Curie temperature greater than or equal to 310°C and / or greater than or equal to 450°C and / or greater than or equal to 620°C and / or greater than or equal to 640°C and / or greater than or equal to 720°C and / or greater than or equal to 750°C and / or greater than or equal to 800°C and / or greater than or equal to 820°C and / or greater than or equal to 850°C.This has the advantage that the encoding through the magnetization pattern on the surface of the magnetized body (MK) does not disappear at elevated temperatures. This allows the position sensor to be used, for example, in applications with elevated operating temperatures to detect the position of a heated object that includes the magnetized body (MK). Such an object could be, for example, a brake disc or an object near such a brake disc. During braking, the brake disc heats up, and thus the magnetized body. One or more optical fibers and / or one or more optical functional elements such as lenses, mirrors, optical fibers, prisms, etc.The one or more sensor elements (SE) and / or the one or more sensor element layers (SES) separate the one or more sensor elements from the evaluation device with the one or more photodetectors (PD) and / or the one or more photodetector arrays (LSA) and the one or more pump radiation sources (LED), as well as the other device components of the position sensor. These are described in more detail below by way of example. To achieve this thermal stability of the magnetization structure of the magnetized body, the Curie temperature of this hard magnetic material is preferably higher, at least in certain areas, than the maximum permissible temperature of the device in which the position sensor is used or is intended to be used, as specified.Seventh sub-variant: In a seventh sub-variant of the proposed position sensor, one or more optical fibers (OF, OF1, OF2, OF3) are inserted into one or more optical transmission paths to optically couple one or more sensor elements (SE, SE1, SE2, SE3) with one or more photodetectors (PD, PD1, PD2, PD3) and / or one or more photodetector arrays (LSA). This has the advantage that the one or more photodetectors (PD, PD1, PD2, PD3) and / or the one or more photodetector arrays (LSA) can be shielded against stray light from the outside and that there is no direct line of sight between the one sensor element (SE) and / or the multiple sensor elements (SE) and / or the one sensor element layer (SES) and / or the multiple sensor element layers (SES) on the one hand and the one or more photodetectors (PD, PD1, PD2, PD3) and / or the one or more photodetector arrays (LSA) on the other.The optical functional elements must consist of one or more pump radiation sources (LEDs), since these optical functional elements preferably direct both the respective pump radiation LB and the fluorescence radiation FL. Preferably, these optical functional elements also include means for separating the fluorescence radiation (FL) with the fluorescence radiation wavelength (^). fl) from the pump radiation (LB) and preferably also other electromagnetic radiation. Preferably, such means are optical long-pass filters (OLF) or functionally equivalent means, such as dichroic mirrors (DM). Eighth sub-variant: In an eighth sub-variant of the proposed position sensor, for example, the optical waveguide (OW, OW1, OW2, OW3), a high-temperature optical waveguide particularly for thermal insulation, is used, which allows operating temperatures at its second end (end of the sensor element SE) above 250°C. Regarding the advantages, we refer to the preceding text on the sixth variant.Ninth Sub-Variant: In a ninth sub-variant of the proposed position sensor, the optical waveguide (OW, OW1, OW2, OW3) preferably comprises an optical waveguide made of fused silica (T > 200°C allowed) and / or an optical waveguide made of sapphire glass (T > 200°C allowed) and / or an optical waveguide made of aluminum-doped glass (T > several hundred degrees Celsius) and / or an optical waveguide made of yttrium aluminum garnet (YAG). These are exemplary materials for an optical waveguide of the seventh variant. This again results in the advantages described in the sixth variant.17 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown Tenth^Subvariant^ In a tenth subvariant of the proposed position sensor, several sensor elements form a closed sensor element layer (SES), in which the sensor elements can be described by detection areas of a photodetector array (LSA). This enables the realization of a position sensor with a very large number of sensor elements (SE) in a sensor element layer SES, where each detection area in such a sensor element layer (SES) de facto represents a sensor element in itself. Eleventh^Subvariant^ In an eleventh subvariant of the proposed position sensor, the position sensor is preferably configured to detect a fluorescence contrast between the respective fluorescence radiation of a plurality of sensor elements (SE, SES) orto detect multiple detection areas on the surface of one or more sensor element layers (SES) and / or the detection areas of a sensor element layer (SES) when exposed to one or more magnetized bodies (MK) and / or to capture a fluorescence contrast image of the one or more magnetized bodies (MK) and / or their magnetization structure of the respective magnetization of the one or more surfaces of the one or more magnetized bodies (MK). This enables, in addition to detecting the x-y displacement parallel to the respective surfaces of the one or more sensor element layers and the detection of respective rotations about a respective axis of rotation perpendicular to a respective surface, the detection of displacements and / or rotations corresponding to the missing translational degree of freedom in the z-direction or the two other rotational rotations.Twelfth Sub-Variant: In a twelfth sub-variant of the proposed position sensor, the position sensor is configured, for example, to determine or detect the distance of a magnetized body (MK) or parts of a body (MK) on the one hand from a sensor element layer (SES) on the other. This is particularly advantageous because it allows for complete position determination. Thirteenth Subvariant In a thirteenth subvariant of the proposed position sensor, the position sensor is preferably configured to determine the position of a rotor (as a magnetized body (MK)) of an electric motor relative to the stator of the electric motor at standstill and / or at rotational speeds of less than 2 rpm and / or less than 0.2 rpm and / or less than 0.02 rpm and / or less than 0.002 rpm and / or less than 0.0002 rpm and / or less than 0.00002 rpm and / or less than 0.000002 rpm and / or less than 10. ‐7*2^ / min and / or less than 10 ‐8 *2^ / min and / or less than 10 ‐9 *2^ / min to detect. This enables position determination at standstill. Fourteenth^Subvariant^ In a fourteenth subvariant of the proposed position sensor, the position sensor is preferably configured to detect the rotational speed of a rotor (as a magnetized body (MK)) relative to a sensor element (SE) at rotational speeds of less than 2^ / min and / or less than 0.2^ / min and / or less than 0.02^ / min and / or less than 0.002^ / min and / or less than 0.00002^ / min and / or less than 0.000002^ / min and / or less than 10 ‐7 *2^ / min and / or less than 10 ‐8 *2^ / min and / or less than 10 ‐9*2^ / min to detect. This enables position determination at standstill. 18 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown List of Figures Figure 1 shows the basic principle of a position sensor 1 based on the intensity of the fluorescence radiation FL of paramagnetic centers NV in one or more crystals of a sensor element SE. Figure 2 shows the system of Figure 1 as a reflection system. Figure 3 shows the intensity of the fluorescence radiation FL of the NV centers NV, which serve as paramagnetic centers NV in the diamond, as a function of the magnetic flux density B acting on the paramagnetic centers NV, here the NV centers NV in the diamond. Figure 4 shows the effect of a sensor element SE with a plurality of crystals with paramagnetic centers NV, which exhibit a spatially uniform and preferably random orientation.Figure 5 shows an arrangement in which the housing of an NVMS sensor system includes, in addition to the integrated circuit IC, the photodetector PD, the first filter F1, the sensor element SE, the pump radiation source LED, and the necessary optical functional elements and wiring. Figure 6 shows another arrangement in which the housing of an NVMS sensor system includes, in addition to the integrated circuit IC, the photodetector PD, the first filter F1, the sensor element SE, the pump radiation source LED, and the necessary optical functional elements and wiring. Figure 7 shows the concept of a resolver that can be sufficiently isolated galvanically and thermally from the magnetized body. Figure 8 shows a proposed resolver RVL, which is configured and designed to determine the rotation angle ^ of an axis AX.Figure 9 corresponds to Figure 8, except that a sensor measurement system SMS now controls and evaluates multiple optical fibers LWL1 to LWLn (here LWL4). Figure 10 corresponds to Figure 6, except that the magnetized body MK is now a magnetized disk with differently magnetized areas MB. Figure 11 shows a sensor element SE, which is controlled and read by the sensor measurement system SMS via an optical fiber LWL. Figure 12 shows an array of, for example, 5 x 1 sensor elements, which are controlled and read by the sensor measurement system SMS via, for example, 5 x 1 optical fibers, and with which rotational displacements about the axis of rotation can be detected.Figure 13 shows an array of exemplary 10 x 1 sensor elements, which are controlled and read out by the SMS sensor measurement system via exemplary 10 x 1 optical fibers, wherein the device detects movements in 1 degree of freedom and wherein translational displacements in the x-direction can be detected. Figure 14 shows an array of exemplary 10 x 4 sensor elements, which are controlled and read out by the SMS sensor measurement system via exemplary 10 x 4 optical fibers, wherein the device detects movements in 2 degrees of freedom and wherein translational displacements in the x- and y-directions can be detected.Figure 15 shows an array of three exemplary sensor elements, which are controlled and read out by the SMS sensor measurement system via three exemplary optical fibers. The device can detect translational displacements in the x and y directions and rotations about the axis of rotation, thus detecting movements in three degrees of freedom. Figure 16 shows a high-temperature resolver based on its magnetic field camera. Figure 17 shows an exemplary, not-to-scale, cross-section through the SES sensor element layer.19 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. Figure 18 shows the alternative operating principle of the sensor element layer SES, as used in the device parts of the resolver in Figures 24 and 25 with side-side illumination of the pump radiation from the pump radiation source(s) LED, and in Figures 16, 19 to 21 with top-side illumination of the pump radiation LB from the pump radiation source(s) LED. Figure 19 corresponds to Figure 16 except that the magnetized body MK now performs a one-dimensional translational movement along the dashed arrows. Figure 20 corresponds to Figure 19, except that the magnetized body is now raised upwards by an angle ^ to the right. Figure 21 corresponds to Figure 19, except that the magnetized body is now rotated about an axis of rotation and an angle ^.Figure 22 corresponds to Figure 21, except that here too the magnetized body is rotated about an axis of rotation AX and an angle of rotation ^. Figure 23 corresponds to Figure 22, except that here too the magnetized body MK is no longer flat, but is instead spherical as an example of more or less arbitrary other shapes of the magnetized body MK. Figure 24 corresponds to Figure 19, except that pump radiation sources, here LEDs, now directly emit the pump radiation LB from the side into a glass substrate or the like, which is part of the sensor element layer SES. Figure 25 corresponds to Figure 21, except that pump radiation sources, here LEDs, now directly emit the pump radiation LB from the side into a glass substrate or the like, which is part of the sensor element layer SES.Figure 26 shows the operating principle of the sensor element layer SES, as proposed in devices of Figures 10 to 16 and 19 to 25, wherein two light-emitting diodes (LEDs) LED1, LED2 are here the primary pump radiation sources for generating the pump radiation LB with the pump radiation wavelength ^. pmpFigure 27 schematically simplifies the operating principle of the sensor element layer SES as proposed in the devices of Figures 10 to 16 and 19 to 25, wherein a dichroic mirrored optional layer DM is applied to the second surface ZO of the first optical functional element (glass plate GP). Figure 28 largely corresponds to Figure 27, which shows the operating principle of the sensor element layer SES as proposed in the devices of Figures 10 to 16 and 19 to 25, except that Figure 28 shows a diffuser layer DS. Figure 29 shows an exemplary, schematically simplified, proposed system for determining the rotor position of a motor rotor as a magnetized body MK. Figure 30 shows an exemplary proposed system with an exemplary BLDC motor, in which a space division multiplexing principle is used instead of the time division multiplexing principle of Figure 29.Figure 31 shows a typical time-dependent intensity value profile I(FL(t)) for the time-dependent intensity of the fluorescence radiation FL in an air gap AG of a motor with, for example, M=14. Figure 32 illustrates the effect of the first angle ^1 and the third angle ^3. Figure 33 shows another possible choice of the first angle ^1 and the third angle ^3. 20 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. Description of the Figures: Figure 7. Figure 7 shows the concept of a resolver that can be sufficiently isolated galvanically and thermally from the magnetized body. In the example of Figure 7, the magnetized body MK is a cylinder rotatably mounted about an axis AX. The surface of the cylinder is intended to have differently magnetized regions MB.The magnetization of these magnetized regions MB is preferably designed such that the magnetic flux density B emerges from the surface of these magnetized regions MB preferably perpendicularly at their center. A sensor element SE with one or more paramagnetic centers NV and / or one or more crystals with one or more paramagnetic centers NV are preferably located near the surface of the cylinder, so that the magnetic excitations H, which the differently magnetized regions MB of the magnetized body MK exhibit, can act on the paramagnetic centers NV in the form of different magnetic flux densities B. As a result, the fluorescence intensity of the fluorescence radiation FL of the paramagnetic centers NV of the respective sensor element SE depends on the angle of rotation ^ by which the cylinder of the magnetized body MK is rotated.The system corresponds to a reflection system as shown in Figure 2. A further distinguishing feature is that the device includes an optical fiber LWL, which transports the pump radiation LB from the pump radiation source LED with the dichroic mirror DM to the sensor element SE, and transports the fluorescence radiation FL of the paramagnetic centers NV from the sensor element SE to the dichroic mirror DM with the photodetector PD. Figure 7 shows a sensor measurement system SMS, which preferably comprises all device components necessary for performing a measurement, except for the optical fiber LWL and the sensor element SE with the paramagnetic centers NV. Preferably, the sensor measurement system SMS is housed in a casing, which is preferably part of the sensor measurement system SMS. If several sensor elements SE are to be controlled and measured, multiple sensor measurement system SMS components can be used together.This applies, for example, to the integrated circuit (IC), which then typically has additional inputs and outputs, and to the housing (GH) of the sensor measurement system (SMS). Preferably, the electrically non-conductive optical fiber (OF) provides galvanic isolation of the sensor measurement system (SMS) from the magnetized body (MK). Preferably, the thermally non-conductive optical fiber (OF) also provides thermal isolation of the sensor measurement system (SMS) from the magnetized body (MK). The same functionality can, of course, be achieved by a clear line of sight between the dichroic mirror (DM) and the sensor element (SE). In this case, the use of a telescope to couple the sensor element with the dichroic mirror (DM), the pump radiation source (LED), and the photodetector (PD) on the one hand, and the sensor element on the other, is advantageous.Ultimately, numerous possibilities exist for guiding and / or modifying the fluorescence and pump radiation within the device in a way that is functionally equivalent to the optical fiber (OF). The sensor elements (SE) can be attached to the ends of the optical fibers (OF) using self-aligning manufacturing processes, resulting in very small, integrated areas (MB) on the surface of the magnetized body (MK). These magnetized areas (MB) can ultimately serve as the domains of hard disk drives (HDDs).The design of Figure 7, with suitable design of the optical waveguides and the sensor elements SE, can offer the following advantages: ^ Galvanic insulation 21 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown ^ High measurement speed (enabling the accurate detection of high rotational speeds) ^ High spatial resolution due to very small sensor elements SE, enabling small magnetized areas MB and thus unprecedented accuracy. ^ Thermal coupling allows for a wide temperature range. ^ Use in corrosive environments is possible. To fully utilize the temperature range, it is advantageous to use the diamonds in the form of preferably nanocrystalline diamond dust containing NV centers and to fuse this into the glass material at the end of the optical waveguide.A further advantage is the improved electromagnetic compatibility resulting from galvanic isolation. Firstly, the housing of the SMS sensor measurement system can be very easily protected against electromagnetic interference. Preferably, the optical fiber (OF) is connected to the SMS sensor measurement system via an optical connector. Typically, no electromagnetic waves other than fluorescent radiation (FL) and pump radiation (LB) penetrate the housing (GH) via the OF. This effectively protects the circuitry of the SMS sensor measurement system against external influences. Electromagnetic fields generated by the SMS sensor measurement system itself can be easily contained within the housing (GH) of the SMS sensor measurement system, so that the SMS sensor measurement system typically emits virtually no radiation.Figure 8 shows a proposed resolver RVL designed and intended to determine the rotation angle ^ of an axis AX. The resolver comprises the axis AX with the cylindrical magnetized body MK. The cylindrical magnetized body MK is rotatably mounted about the axis AX. The magnetizable body MK has differently magnetized regions MB on its cylindrical surface. The magnetized regions MB are arranged on the surface of the cylinder of the magnetized body MK such that, during one complete rotation of the magnetized body MK, preferably any magnetized region MB that is actually used and located on the cylindrical surface of the magnetized body MK passes exactly one sensor element of the sensor elements (SE1, SE2, SE4) exactly once.The magnetization of the differently magnetized regions MB is preferably selected such that the magnetic flux B generated by these magnetized regions MB flows through the respective sensor element(s) (SE1, SE2, SE3, SE4) and thus influences the intensity of the fluorescence radiation FL of this sensor element according to the magnetization of this magnetized region MB. For the purposes of this document, the absence of magnetization is considered magnetization. Preferably, the magnetized regions MB on the cylindrical surface of the magnetizable body MK are organized in rows parallel to the axis AX. Preferably, each row of the arrangement of magnetized regions MB on the cylindrical surface of the magnetizable body MK comprises several adjacent magnetized regions MB.The magnetized regions MB of a row typically form a data bit for each magnetized region MB, depending on the magnetization. Thus, a row of the arrangement of magnetized regions MB on the cylindrical surface of the magnetizable body MK typically represents a data word. Preferably, the data words are encoded with a code that depends on the angular position of the angle ^ of the data word on the surface of the magnetized body MK. Preferably, this is a Gray code. Preferably, it is a code that allows the detection of one-bit errors. Preferably, it is a code that allows the detection of two-bit errors and the detection and correction of one-bit errors. (Hamming code) In the example of Figure 8, the resolver comprises 22 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown RVL exemplary n sensor measurement systems (SMS1 to SMSn).N is assumed to be a positive integer. In the example shown in Figure 8, n=4 is chosen. Thus, the resolver RVL comprises, for example, 4 sensor measurement systems (SMS1 to SMS4). Each of the n sensor measurement systems (SMS1 to SMSn), here the 4 sensor measurement systems (SMS1 to SMS4), is optically coupled to a corresponding sensor element (SE1 to SEn), here the 4 sensor elements (SE1 to SE4), via a respective optical fiber (LWL1 to LWLn). Thus, each sensor measurement system of the n sensor measurement systems (SMS1 to SMSn), here the exemplary 4 sensor measurement systems (SMS1 to SMS4), together with the respective associated optical waveguide of the n optical waveguides (LWL1 to LWLn) and the respective associated sensor element of the n sensor elements (SE1 to SEn) and in conjunction with the magnetizable body MK, should represent a sensor system according to Figure 7.Thus, the sensor system of Figure 8 ultimately comprises four sensor systems corresponding to Figure 1, all of which share the magnetized body MK. Figure 9 corresponds to Figure 8, except that a sensor measurement system SMS now controls and evaluates several optical fibers LWL1 to LWLn (here LWL4). Preferably, the sensor measurement system SMS comprises n internal sensor measurement systems (SMS1 to SMSn), which now share various device components, such as the integrated circuit IC. Here, n is again 4 for illustrative purposes. Figure 10 corresponds to Figure 6, except that the magnetized body MK is now a magnetized disk with differently magnetized areas MB. Figure 11 shows a sensor element SE that is controlled and read by the sensor measurement system SMS via an optical fiber LWL.The device can detect rotational displacements about the axis of rotation. The device thus detects movements in one degree of freedom. Figure 12 shows an array of, for example, 5 x 1 sensor elements, which are controlled and read out by the sensor measurement system SMS via, for example, 5 x 1 optical fibers. Preferably, the sensor measurement system SMS comprises 5 internal sensor measurement systems, which, however, now share various device components, such as the integrated circuit IC. The device can detect rotational displacements about the axis of rotation. The device thus detects movements in one degree of freedom. For the detection of this degree of freedom, typically at least two sensor elements SE are necessary, which are preferably arranged on a plane parallel to the surface of the magnetized body MK.Figure 13 shows an array of, for example, 10 x 1 sensor elements, which are controlled and read out by the sensor measurement system SMS via, for example, 10 x 1 optical waveguides. Preferably, the sensor measurement system SMS comprises 10 x 1 internal sensor measurement systems, which, however, now share various device components, such as the integrated circuit IC. The device can detect translational displacements in the x-direction. The device thus detects movements in 1 degree of freedom. For the detection of this degree of freedom, at least two sensor elements SE are necessary, which are preferably arranged on a plane parallel to the surface of the magnetized body MK.23 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. Figure 14 shows an array of, for example, 10 x 4 sensor elements, which are controlled and read out by the sensor measurement system SMS via, for example, 10 x 4 optical fibers. Preferably, the sensor measurement system SMS comprises 10 x 4 internal sensor measurement systems, which, however, now share various device components, such as the integrated circuit IC. The device can detect translational displacements in the x and y directions. The device thus detects movements in two degrees of freedom. For the detection of these two degrees of freedom, at least three sensor elements SE are necessary, which are preferably arranged on a plane parallel to the surface of the magnetized body MK and not in a line.Figure 15 shows an array of, for example, three sensor elements, which are controlled and read out by the sensor measurement system SMS via, for example, three optical fibers. Preferably, the sensor measurement system SMS comprises three internal sensor measurement systems, which, however, now share various device components, such as the integrated circuit IC. The device can detect translational displacements in the x and y directions and rotations about the axis of rotation. The device thus detects movements in three degrees of freedom. For the detection of these three degrees of freedom, at least three sensor elements SE are necessary, which are preferably arranged on a plane parallel to the surface of the magnetized body MK and not in a line. Figure 16 shows a high-temperature resolver based on its magnetic field camera. The light source LED emits pump radiation LB with a pump radiation wavelength ^. pmpand unwanted electromagnetic radiation USTR of other wavelength ranges. An optical shortpass filter SF preferably allows only the pump radiation LB to pass through and preferably blocks the electromagnetic radiation USTR of other wavelength ranges. If the light source LED does not emit unwanted electromagnetic radiation USTR of other wavelength ranges, this optical shortpass filter SF is not necessary. An illumination optic BO ensures that the pump radiation LB illuminates the sensor element layer SES as homogeneously as possible. The illumination optic BO can comprise one or more optical functional elements. The sensor element layer SES is preferably applied to a mechanical support, for example, a flat surface EF. Preferably, the flat surface EF is part of the housing wall of the housing GH (not shown here). The material of this flat surface EF orThe housing wall GW of the housing GH in this region is preferably non-magnetic and preferably does not substantially influence the magnetic field. The sensor element layer SES preferably comprises a plurality of randomly and preferably uniformly oriented crystals and / or diamond crystals with paramagnetic centers NV. When diamond is used as the crystal material, the paramagnetic centers NV can be, for example, NV centers and / or SiV centers and / or TiV centers and / or GeV centers and / or SnV centers and / or NiN4 centers and / or PbV centers and / or ST1 centers. When NV centers NV in diamond are used as crystals of the sensor element layer SES, the pump radiation LB preferably has a pump radiation wavelength ^. pmpexhibiting wavelengths in the range of 400 nm to 700 nm and / or preferably 450 nm to 650 nm and / or preferably 500 nm to 550 nm and / or preferably 515 nm to 540 nm. A wavelength of 532 nm is clearly preferred as the pump radiation wavelength. pmp In the case of using NV centers in diamond or in diamonds of the sensor element layer SES, a laser diode from Osram of type PLT5 520B, for example, can be used as a light source LED with a 520 nm pump radiation wavelength. pmp suitable. When using NV centers 24 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown NV in diamond crystals in the sensor element layer SES as paramagnetic centers NV of the sensor element layer SES, the NV centers NV of the sensor element layer SES typically emit when irradiated with pump radiation LB of the pump radiation wavelength described above ^ pmpa fluorescence radiation FL with a typical fluorescence wavelength ^ fl of approximately 637 nm at NV centers. An imaging optic preferentially captures the fluorescence image of the spatially dependent fluorescence intensity of the Paramagnetic centers NV are generated in the sensor element layer SES. An optical longpass filter OLF preferentially allows electromagnetic radiation with the fluorescence wavelength ^ to pass through. fl and thus allow the fluorescence radiation FL to pass through. The optical longpass filter OLF preferentially blocks the passage of electromagnetic radiation with the pump radiation wavelength ^. pmpand thus the passage of the pump radiation LB. The optical longpass filter OLF therefore corresponds in its function to the first optical filter F1. Due to these properties of the optical longpass filter OLF, the imaging optics AO can capture the fluorescence image of the locally modulated fluorescence radiation FL of the sensor element layer SES in the wavelength range of the fluorescence wavelength ^. flThe fluorescence is captured and mapped onto the nxm photodetectors of the nxm photodetector array LSA of the fluorescence camera. Since the intensity of the fluorescence radiation FL of the sensor element layer SES depends locally on the magnetic flux density B at the location of the respective paramagnetic center NV in the sensor element layer SES, the fluorescence image of the location-dependent intensity of the fluorescence radiation FL of the sensor element layer SES corresponds to a magnetic flux density magnitude image of the magnetic flux density field that permeates the sensor element layer SES.Since, despite all efforts, the density distribution of the paramagnetic centers NV in the sensor element layer SES and / or the illumination of the sensor element layer SES with pump radiation LB and / or the measurement of the fluorescence intensity FL over the area of ​​the sensor element layer SES are generally not entirely homogeneous, it has proven beneficial to calibrate the system by calibration measurements before initial use. To process the measured values ​​of the photodetectors PD of the photodetector array LSA, evaluation electronics AE of the photodetector array LAS acquire the measured values ​​of the signals from the photodetectors PD of the photodetector array LSA and, in particular by amplification and / or filtering, generate the output signals AS of the photodetectors PD of the photodetector array LSA.The signal conditioning circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA preferably controls the auxiliary magnets HM by means of a control device ASM for the electromagnets of the auxiliary magnets HM, if these do not consist solely of permanent magnets. The signal conditioning circuit ABS for the output signals AS of the photodetectors of the photodetector array LSA generates a fluorescence image and / or, for example, optionally an enhanced fluorescence image from the output signals AS of the photodetectors PD of the photodetector array LSA, as described above. Due to the relationships described above, the fluorescence image and / or, for example, optionally the enhanced fluorescence image represent a magnetic flux density magnitude image of the magnetic flux density field in the sensor element layer SES or an enhanced magnetic flux density magnitude image of the magnetic flux density field in the sensor element layer SES.The ABS signal conditioning circuit for the output signals AS of the photodetectors PD of the photodetector array LSA transmits this fluorescence image, or the improved fluorescence image, preferably via the interface circuit IF and a data bus EXTDB to a computer system RSYS for controlling the resolver. Preferably, the computer system RSYS generates a one-, two-, or three-dimensional representation of the magnetic flux density distribution in the sensor element layer SES from this fluorescence image or the improved fluorescence image and optionally displays this on the DISP screen. The data bus EXTDB serves to establish the data connection between the ABS signal conditioning circuit for the output signals AS of the photodetectors PD of the photodetector array LSA and the computer system RSYS for controlling the resolver.The object being measured, in this example a magnetized body MK with magnetized areas MB, generates variations in the magnetic flux density B in the sensor element layer SES. These variations result in the aforementioned magnetic flux density magnitude images of the magnetic flux density field in the sensor element layer SES, or the improved magnetic flux density magnitude images of the magnetic flux density field in the sensor element layer SES. The computer system can then determine the current position of the magnetized body MK relative to the sensor element layer SES from the acquired magnetic flux density magnitude images by cross-correlation and output these coordinates. Figure 17 shows an exemplary, not-to-scale cross-section through the sensor element layer SES. In the example shown in Figure 17, a mirror coating BM is applied to a substrate material I TM.In this example, the substrate material I TM is located towards the underside US of the sensor element layer SES. The reflective coating BM, relative to the substrate material I TM, is located towards the topside OS of the sensor element layer SES. The reflective coating BM is preferably opaque to electromagnetic radiation with the pump radiation wavelength ^. pmp The BM mirror coating preferentially reflects electromagnetic radiation with the pump radiation wavelength ^. pmp back into the interior of the housing. This has the advantage that the pump radiation LB with pump radiation wavelength ^ pmpThe layer containing crystals and / or nanocrystals with paramagnetic centers NV passes through it twice. This doubles the pumping power and thus the intensity of the fluorescence radiation FL reaching the nxm photodetectors of the photodetector array LSA. The reflective coating BM preferentially reflects electromagnetic radiation with the fluorescence radiation wavelength ^. fl and / or fluorescence radiation FL with the fluorescence radiation wavelength ^ fl back into the interior of the housing. This has the advantage that the fluorescence radiation FL with fluorescence radiation wavelength ^ flThe paramagnetic centers of the sensor element layer SES, here in the form of a layer with crystals and / or nanocrystals with paramagnetic centers NV, emit radiation towards the underside US of the sensor element layer SES and reflect it back towards the surface OS of the sensor element layer SES. This further doubles the intensity of the fluorescence radiation FL that reaches the nxm photodetectors of the photodetector array LSA. The layer with crystals and / or nanocrystals with paramagnetic centers NV is proposed to be located on the reflective coating BM facing the top OS of the sensor element layer SES. A further support material layer WTS preferably covers the sensor element layer SES in the form of the layer with crystals and / or nanocrystals with paramagnetic centers NV.Preferably, the material of the carrier material layer WTS, typically a carrier material II TM2, is transparent to electromagnetic radiation, in particular pump radiation LB, with pump radiation wavelength ^. pmp Preferably, the material of the support material layer WTS, typically a support material II TM2, is transparent to electromagnetic radiation, in particular fluorescence radiation FL, with fluorescence radiation wavelength ^. flThe sensor element layer (SES) can include optical functional elements such as optical waveguides and / or filters and / or photonic crystals and / or digital optics. The digital optics can be embossed or otherwise incorporated into the surface of the sensor element layer (SES). The sensor element layer (SES) can include optical functional elements such as optical waveguides and / or filters.26 / 89 © Elmos Semiconductor SE, IP‐Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown Figure 18 Figure 18 shows the alternative operating principle of the sensor element layer SES of the sensor element SE, as used by exemplary resolvers of Figures 24 and 25 with exemplary irradiation of the pump radiation(s) LB of the pump radiation source(s) LED from one or more side faces (SFL1, SLF2) of the sensor element SE, and the equally alternative operating principle of the sensor element layer SES of the sensor element SE, as used by other exemplary resolvers in Figures 16, 19 to 21 with exemplary irradiation of the pump radiation LB of the pump radiation source(s) LED from the top OS of the sensor element SE.An exemplary device can combine the illumination of the pump radiation LB from the top surface OS of the sensor element SE with illumination of the pump radiation LB from one or more side surfaces (SFL1, SFL2) of the sensor element SE. An exemplary device can combine the illumination of the pump radiation LB from a first side surface SFL1 of the sensor element SE with illumination of the pump radiation LB from one or more further side surfaces SFL2 of the sensor element SE. The two light-emitting diodes (LEDs) LED1, LED2 form the primary pump radiation sources LED for generating the pump radiation LB with the pump radiation wavelength ^. pmpThe primary pump radiation sources, in the form of LEDs LED1 and LED2, emit the pump radiation LB from the side via the side surfaces (SLF1, SLF2) into the planar first optical functional element, which is a glass plate GP. Injection of the pump radiation LB via the top surface OS is, of course, also possible as a supplement or alternative. The pump radiation LB propagates from the injection point of the pump radiation LB into the planar first optical functional element – ​​here, the glass plate GP – with the intensity decreasing continuously with the distance from the injection point of the pump radiation LB into the planar first optical functional element – ​​here, the glass plate GP. A portion of the pump radiation LB leaves the first optical functional element (glass plate GP) towards a first surface EO and enters the SI layer.The SI layer preferably comprises a plurality of crystals and / or nanocrystals, which preferably include paramagnetic centers NV. The crystals and nanocrystals are preferably embedded in a substrate material of the SI layer that is resistant to electromagnetic radiation with the pump radiation wavelength ^. pmp is transparent. The crystals and nanocrystals are preferably embedded in a substrate material of the SI layer, which is transparent to electromagnetic radiation with the fluorescence radiation wavelength ^. fl is transparent. The crystals and nanocrystals are preferably embedded in a substrate material of the SI layer, which is suitable for pump radiation LB with the pump radiation wavelength ^. pmp is transparent. The crystals and nanocrystals are preferably embedded in a substrate material of the SI layer, which is transparent to fluorescence radiation FL with the fluorescence radiation wavelength ^. flis transparent. Part of the pump radiation LB in the SI layer irradiates paramagnetic centers NV of crystals and nanocrystals in the SI layer. Due to the irradiation with pump radiation LB of the pump radiation wavelength ^ pmpParamagnetic centers NV of crystals and nanocrystals in layer SI emit fluorescence radiation FL. A reflective coating BM reflects the portion of the fluorescence radiation FL that leaves layer SI not in the direction of the photodetector array LSA, but in the opposite direction, back into layer SI. The reflective coating BM also reflects the portion of the pump radiation LB that leaves layer SI not in the direction of the photodetector array LSA, but in the opposite direction, back into layer SI. In the example shown in Figure 18, the reflective coating BM is covered with an optional substrate I™. Typically, the substrate I™ is a component of the resolver. Therefore, the sequence is different from that shown in Figure 17. 27 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown Figures 19 to 25 Figure 19 corresponds to Figure 16 with the difference that the magnetizedBody MK now performs a one-dimensional translational movement along the dashed arrows. The magnetized body MK exhibits a suitable pattern of magnetized regions MB. The magnetic flux density B that these magnetized regions MB generate at the locations of the paramagnetic centers NV in the sensor element layer SES is different due to the difference in magnetization of the magnetized regions MB on the surface of the magnetized body. For example, the magnetized regions MB of a magnetized body MK, as proposed, for instance, in devices of Figures 10 to 16 and 19 to 25, can form a one- or two-dimensional lattice of magnetized regions MB on the surface of the magnetized body MK. This lattice can, for example, be a two-dimensional lattice built upon two-dimensional unit cells of this lattice. Such a unit cell canFor example, in very simple cases, they can have the shape of a square, a rectangle, or a rhombus. Unit cells capable of forming a surface-filling tiling are particularly preferred. The magnetized regions MB can have a boundary identical to that of such a unit cell. Alternatively, it is also conceivable that the magnetized regions have a uniform shape, for example, a filled circle, and are placed at the vertices of the unit cells. It is also conceivable that the magnetized regions are arranged around a central point in a polar coordinate system. Preferably, the magnetized regions are distributed such that a two-dimensional autocorrelation function of the magnetizations of the magnetized regions exhibits the smallest possible local maxima. That is, as far as possible, each region of the magnetized body is correlated with every other region.The detection area is as dissimilar as possible to the magnetized body. The imaging optics AO assigns detection areas on the surface of the sensor element layer SES to the photodetectors PD of the photodetector array LSA. These detection areas have shapes defined by the imaging optics AO and the size and shape of the photodetectors PD of the photodetector array LSA. Preferably, but not necessarily, these shapes of the detection areas on the surface of the sensor element layer SES correspond to the shape of the magnetized areas MB on the surface of the magnetized body. Preferably, the magnetization of the magnetized areas MB is chosen such that the magnetization pattern of the magnetized areas MB does not repeat when shifted by one or more lattice basis vectors in the x- or y-direction. Thus, each detectable pattern is unique, and the position of the magnetized body MK relative to the sensor element layer is determined by the magnetization pattern.SES is uniquely identifiable by pattern recognition. The magnetization pattern of the magnetized areas MB on the surface of the magnetized body MK, due to the dependence of the fluorescence radiation FL of the sensor element layer areas corresponding to the respective magnetized areas MB, causes a corresponding attenuation or non-attenuation of the intensity of this fluorescence radiation from the paramagnetic centers NV in the corresponding sensor element layer areas and thus from the corresponding detection areas. This leads to a fluorescence radiation pattern of the intensity of the fluorescence radiation FL of the paramagnetic centers of the sensor element layer SES on the surface of the sensor element layer SES, which the photodetectors PD of the photodetector array LSA detect by means of the imaging optics AO and the optical longpass filter OLF.Suppression of pump radiation LB is detected. This fluorescence radiation pattern (fluorescence image) corresponds to the magnetization pattern of the magnetized areas on the surface of the magnetized body MK. The device described here uses the photodetectors PD of the photodetector array LSA to determine the fluorescence image of the locally varying intensities of the respective fluorescence radiation FL of the paramagnetic centers NV in the sensor element layer SES in the respective detection areas. The evaluation electronics AE detect these signals from the photodetectors PD of the photodetector array LSA and generate output signals AS from them. A conditioning circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA makes them available, for example, via a data interface IF to aThe computer system SYS is available. Preferably, the computer system determines, for example, using a one- or two-dimensional cross-correlation function, the displacement and / or rotation of the fluorescence pattern relative to the position of the sensor element layer from the acquired fluorescence image. This displacement and / or rotation of the fluorescence pattern relative to the position of the sensor element layer corresponds to the displacement and / or rotation of the magnetization pattern of the magnetized body MK relative to the position of the sensor element layer SES. If the magnetized body is mechanically attached to a first device and the sensor element layer with the photodetectors PD of the photodetector array LSA is attached to a second device, the sensor system presented here can thus detect the displacement of the first device relative to the second device in the x- and / or y-direction andThe sensor system can output the x- and / or y-measurement values, for example, via an external data bus EXTDB, or make them available for such output. Furthermore, the sensor system presented here can detect the rotation of the first device object relative to the second device object about an axis perpendicular to the plane of the sensor element layer SES and output the rotation angle ^ as a measurement value, for example, via an external data bus EXTDB, or make it available for such output. However, this is not an exhaustive list of possibilities. The further the magnetized body MK is from the sensor element layer SES, the more blurred the fluorescence image becomes. A measure of this blurring is the contrast that differently magnetized areas MB produce in the detection areas of the sensor element layer SES. The contrast can be defined as the difference between the intensity value of the fluorescence radiation FL of the brightest detection area.The contrast can be defined as the difference between the intensity value of the fluorescence radiation FL of a darkest detection area in an evaluation area on the surface of the sensor element layer SES and the intensity value FL of a darkest detection area in an evaluation area on the surface of the sensor element layer SES, and then divided by the intensity value of the fluorescence radiation FL of a brightest detection area in an evaluation area on the surface of the sensor element layer SES. Alternatively, for the purposes of this document, the contrast can also be defined as the difference between the intensity value of the fluorescence radiation FL of a brightest detection area in an evaluation area on the surface of the sensor element layer SES and the intensity value FL of a darkest detection area in an evaluation area on the surface of the sensor element layer SES, and then divided by the intensity value of the fluorescence radiation FL of adarkest detection area in an evaluation area on the surface of the sensor element layer SES. Other definitions are conceivable, for example, a definition of contrast as the difference between the intensity value of the fluorescence radiation FL of a brightest detection area in an evaluation area on the surface of the sensor element layer SES minus the intensity value of the fluorescence radiation FL of a darkest detection area in an evaluation area on the surface of the sensor element layer SES 29 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown on the one hand, and then divided by the mean value of the intensity values ​​of the fluorescence radiation FL of the detection areas in the evaluation area on the surface of the sensor element layer SES. It is therefore part of the technical teaching disclosed here that the device derives at least one value for the contrast from the fluorescence image,Preferably, an average value is determined for the average contrast of the detection areas on the surface of the sensor element layer SES. This document therefore proposes, in particular, to determine the average contrast as a distance value between the sensor element layer SES and the magnetized body MK in the z-direction, i.e., perpendicular to the plane of the sensor element layer SES. Furthermore, this document proposes to determine, from this contrast value, in particular the average contrast, a distance value between the sensor element layer SES and the magnetized body MK in the z-direction, i.e., perpendicular to the plane of the sensor element layer SES. If the surface of the magnetized body MK is not parallel to the surface of the sensor element layer SES, the contrast for the corresponding fluorescence sub-image of the fluorescence image, which is located further away from the sensor element layer SES, isThe magnetization pattern of the magnetized regions MB of the magnetized body MK corresponds to a smaller distance than the corresponding fluorescence sub-image of the fluorescence image, which corresponds to regions of the magnetization pattern of the magnetized regions MB of the magnetized body MK located less far from the sensor element layer SES. This allows different distances in the Z-direction to be determined for different sub-regions of the magnetized body MK. Furthermore, this document proposes determining several contrast values ​​for several, preferably different and preferably, but not necessarily, non-overlapping evaluation areas on the surface of the sensor element layer SES and determining a plurality of distances in the Z-direction from these. Such a distance typically refers to the mean distance between the respective corresponding region on the surface of theThe magnetized body MK and the corresponding area of ​​the sensor element layer SES. In this way, for example, the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS can determine a tilting of the magnetized body by a rotation angle about an axis parallel to the plane of the sensor element layer SES. For this purpose, for example, the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS can determine and store the position of the axis of rotation of the magnetized body MK and the rotation angle about this axis. In the extreme case, for example, the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS can thus determine three rotation angles (Euler angles, which are sometimes denoted by ^, ^, ^ or ^, ^, ^) for the magnetized body MK.(designated) and determine three translational displacements in the x-y and z directions. If the magnetized body MK is flexible – for whatever reason – the proposed device can determine the deflection of the magnetized body MK. In extreme cases, for example, the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS for the magnetized body MK can determine a deflection, for example, in the form of a measured value of the curvature of the surface. This document refers, by way of example, to the document at URL https: / / de.wikipedia.org / wiki / Kr%C3%BCmmung#Kr%C3%BCmmung_einer_Fl%C3%A4che. One possible implementation of such a device is the application of computer-implemented methods for pattern recognition by the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or theThe computer system RSYS. This can be, for example, a 30 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown computer-implemented neural network model and / or other machine learning methods. The described computer-implemented method for determining object displacement and / or rotation by executing a computer-implemented pattern recognition method by the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS is preferably based on a number of computer-implemented pattern recognition and machine learning (deep learning) methods. These computer-implemented methods include, for example: Feature extraction: The processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or theThe RSYS computer system preferably begins the execution of the computer-implemented feature extraction process, typically with the computer-implemented extraction of relevant features from one or more images of fluorescence patterns of the respective intensity distribution of the fluorescence radiation FL of the detection areas of the sensor element layer SES, stored in one or more memories of the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the RSYS computer system. This extraction identifies and isolates important information relevant for object localization of the magnetized body MK and determination of its orientation. For example, the ABS processing circuit for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the RSYS computer system use features such as corners, edges, or texture and the patterns.the magnetization of the magnetized areas MB of the magnetized body MK. Preferably, feature extraction also includes the determination of a contrast image that represents the local contrast in an associated contrast value range around the respective image point, preferably in an intermediate step. This contrast image enables the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS to determine a distance grid, which allows the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS to estimate distances. Preferably, the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS perform this estimation of a distance image using computer-implemented methods whose program codeis located in one or more memory locations of the device, and the processing circuit ABS retrieves and executes the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS from memory when executing these computer-implemented methods. These computer-implemented methods preferably include, among others, the computer-implemented machine learning and artificial intelligence methods presented here. Convolutional Neural Networks (CNNs): For further computer-implemented analysis and processing of the stored image(s), the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS, for example, uses Convolutional Neural Networks. This deep neural network architecture is particularly well-suited for extracting complex features from the image(s) stored in the memory locations.Using CNNs, the ABS processing circuit for the AS output signals of the PD photodetectors of the LSA photodetector array and / or the RSYS computer system can recognize patterns in different scales and rotations in the fluorescence patterns. 31 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. A computer-implemented regression method: After feature extraction, the ABS processing circuit for the AS output signals of the PD photodetectors of the LSA photodetector array and / or the RSYS computer system preferably perform a regression analysis to determine the exact displacement of the magnetized body MK in the x- and / or y-direction as well as the elevation of the magnetized body MK in the z-direction. Various regression algorithms are used, which are based on a computer-implemented training procedure performed on a training system during the manufacturing or development phase.trained on the extracted features to make precise predictions. A computer-implemented classification method: In addition to regression, the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS preferably perform a computer-implemented classification method to determine the rotation of the magnetized body MK relative to the imaging device, here the sensor element layer SES, by one or more of the three Euler angles. Here, the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS preferably use computer-implemented classification methods that have been trained on the extracted features by a computer-implemented training method executed on a training system during the manufacturing or development phase to make the correctThe orientation of the magnetized body MK is to be identified. By combining these computer-implemented methods of computer-implemented pattern recognition and machine learning, the described method enables a precise and reliable determination of the object displacement, lifting, and rotation of the magnetized body MK based on the fluorescence image of the magnetized body. Possible computer-implemented and / or machine-implemented methods of pattern recognition and machine learning, including deep learning as defined in this document, are, for example: Artificial computer-implemented and / or machine-implemented neural networks (ANNs): Basic neural network architectures consisting of interconnected artificial neurons. Computer-implemented and / or machine-implemented convolutional neural networks (CNNs): A special type of computer-implemented and / orMachine-implemented neural networks that are particularly well-suited for processing images and other structured data. Computer-implemented and / or machine-implemented Recurrent Neural Networks (RNNs): Computer-implemented and / or machine-implemented neural network architectures designed to process sequence data using feedback loops. Computer-implemented and / or machine-implemented Long Short-Term Memory Networks (LSTM): A special type of computer-implemented and / or machine-implemented RNNs capable of modeling and learning long dependencies in sequence data. Computer-implemented and / or machine-implemented Generative Adversarial Networks (GANs): A pair of computer-implemented and / or machine-implemented neural networks that compete and cooperate to generate realistic data.A computer-implemented and / or machine-implemented neural network (neural network model) generates data, while another attempts to differentiate it. Computer-implemented and / or machine-implemented Deep Belief Networks (DBNs): Computer-implemented and / or machine-implemented hierarchical models consisting of many layers of stochastic binary variables and providing an efficient computer-implemented and / or machine-implemented method for making predictions and inferences. Computer-implemented and / or machine-implemented autoencoders: A type of computer-implemented and / or machine-implemented neural network that attempts to efficiently encode and reconstruct input data using computer-implemented and / or machine-implemented methods to derive useful features.to extract and reduce noise. Computer-implemented and / or machine-implemented Support Vector Machines (SVMs): A computer-implemented and / or machine-implemented non-neural method of computer-implemented and / or machine-implemented machine learning used for computer-implemented and / or machine-implemented classification and computer-implemented and / or machine-implemented regression, based on the idea of ​​finding the optimal interface between data points. Computer-implemented and / or machine-implemented decision trees and computer-implemented and / or machine-implemented random forests: Computer-implemented and / or machine-implemented ensemble methods of computer-implemented and / or machine-implemented machine learning consisting of a set of computer-implemented and / or machine-implemented decision trees and used forComputer-implemented and / or machine-implemented classification and regression tasks are used. Computer-implemented and / or machine-implemented clustering algorithms: methods for the computer-implemented and / or machine-implemented grouping of data points into homogeneous clusters, such as computer-implemented and / or machine-implemented k-means, hierarchical clustering, and DBSCAN. This list of potentially applicable computer-implemented and / or machine-implemented methods is only exemplary and not exhaustive. This list merely provides an overview of some of the most important computer-implemented and / or machine-implemented methods of computer-implemented and / or machine-implemented pattern recognition and computer-implemented and / or machine-implemented machine learning, including deep learning, which the ABS conditioning circuit uses for the output signals AS of the photodetectors PD.The photodetector array LSA and / or the computer system RSYS can, for example, execute program code stored at least temporarily in one or more memory locations MEM of the device. Other computer-implemented methods are conceivable. Preferably, the program code for the aforementioned and / or subsequent computer-implemented methods is located in one or more memory locations of the signal conditioning circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS. The signal conditioning circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS accesses the corresponding program code from the one or more memory locations MEM when executing one of the aforementioned and / or subsequent computer-implemented methods and executes this corresponding program code from the one or more memory locations.Execution of one of the aforementioned and / or subsequent computer-implemented and / or machine-implemented methods. The foregoing can be applied in particular when using a magnetic field camera, as proposed, for example, in the devices shown in Figures 19 to 25. If the device has a very large number of sensor elements SE, as used, for example, in Figures 10 to 15, then 33 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown, a smooth transition from a device with isolated sensor elements SE to a magnetic field camera with one or more sensor element layers SES occurs. Figure 20 corresponds to Figure 19, except that the magnetized body is now raised upwards by an angle ^ to the right. This allows the magnetic field camera to "see" the magnetization pattern of the pattern of magnetized areas MB on the surface of theThe image of the magnetized body MK on the right side of the magnetized body MK is blurred and therefore has significantly lower contrast than on the left side. This allows the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS to determine a measured value for the tilt angle ^ and / or the position of the tilt axis AX and / or the orientation of the tilt axis AX from the fluorescence pattern of the intensity distribution of the fluorescence radiation FL of the detection areas of the sensor element layer SES and from the contrast distribution. For example, by implementing a computer-implemented pattern recognition, as described in detail in the description of Figure 19, the processing circuit ABS for the output signals AS of the photodetectors PDThe photodetector array LSA and / or the computer system RSYS determine the tilt angle ^ and / or the position of the tilt axis AX and / or the orientation of the tilt axis AX in x / y coordinates, communicate the corresponding values ​​to higher-level computer systems via an external data bus EXTDB2 or internally via a data bus EXTDB, and / or store them in one or more memories for this communication. Figure 21 corresponds to Figure 19, except that the magnetized body is now rotated about a rotation axis and a rotation angle ^. For example, by implementing a computer-implemented pattern recognition, as described in detail in the description of Figure 19, the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS can determine the rotation angle ^ and / or the position of the rotation axis AX in x / y coordinates and / or the distance of the magnetized body MK from theThe sensor element layer SES determines the corresponding values, communicates them to higher-level computer systems via an external data bus EXTDB2 or internally via a data bus EXTDB, and / or stores them in one or more memories for this communication. Figure 22 corresponds to Figure 21, except that here too, the magnetized body is rotated about a rotation axis AX and a rotation angle ^. However, the rotation axis AX is now tilted by the two Euler angles ^ and ^ from the perpendicular to the plane of the sensor element layer SES. For example, by implementing a computer-implemented pattern recognition, as described in detail in the description of Figure 19, the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS ^ a rotation angle ^ and / or the ^ a position of the rotation axis AX in x / y coordinates and / or ^ the tilt angle ^ of the rotation axis AX.and / or ^ the tilt angle ^ of the magnetized body MK and / or ^ the tilt angle ^ of the rotation axis AX and / or ^ the tilt angle ^ of the magnetized body MK and / or 34 / 89 © Elmos Semiconductor SE, IP‐Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown ^ one or more distances (z1, z2, z3) of the magnetized body MK from the sensor element layer SES at different locations in the sensor element layer SES by computer-implemented evaluation of the contrast image and / or ^ a displacement of the magnetized body MK in the x-direction and / or ^ a displacement of the magnetized body MK in the y-direction and / or ^ possibly further parameters, such as a deflection and / or curvature of the magnetized body MK. The ABS processing circuit for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the RSYS computer system preferably transmit the corresponding values ​​via an externalData bus EXTDB2 to higher-level computer systems or internally via a data bus EXTDB and / or store this data for this communication in one or more memory locations of the device. Figure 23 corresponds to Figure 22, except that here, too, the magnetized body MK is no longer flat, but, as an example of more or less arbitrary other shapes of the magnetized body MK, is spherical. Here, too, the magnetized body MK is rotated about a rotation axis AX and a rotation angle ^. In addition, the rotation axis AX is now tilted by the two Euler angles ^ and ^ from the perpendicular to the plane of the sensor element layer SES. For example, by implementing a computer-implemented pattern recognition, as described in detail in the description of Figure 19, the processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system can be used.RSYS also here ^ a rotation angle ^ and / or the ^ a position of the rotation axis AX in x / y coordinates and / or ^ the tilt angle ^ of the rotation axis AX and / or ^ the tilt angle ^ of the magnetized body MK and / or ^ the tilt angle ^ of the rotation axis AX and / or ^ the tilt angle ^ of the magnetized body MK and / or ^ one or more distances (z1, z2, z3) of the magnetized body MK from the sensor element layer SES at different locations in the sensor element layer SES by computer-implemented evaluation of the contrast image and / or ^ a displacement of the magnetized body MK in the x-direction and / or ^ a displacement of the magnetized body MK in the y-direction and / or ^ the (in particular) correct shape of a part of the surface of the magnetized body MK (here the correctness of the spherical surface of the part of the surface of the magnetized body MK that faces the sensor element layer SES)and / or ^ possibly further parameters, such as deflection and / or curvature of the magnetized body MK. The processing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA and / or the computer system RSYS preferably transmit the corresponding values ​​via an external data bus EXTDB2 to higher-level computer systems or internally via a data bus EXTDB and / or keep them available for this communication in one or more memories of the device. 35 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown Figure 24 Figure 24 corresponds to Figure 19 with the difference that pump radiation sources, here LEDs, now directly emit the pump radiation LB from the side into a glass substrate or the like, which is part of the sensor element layer SES. The glass substrate serves as a planar optical waveguide that directs the pump radiation LB of the pump radiation sources LED into theThe sensor element layer SES is evenly distributed. Otherwise, this document refers to the description of the device components also present here, and their function and interaction, in the description of Figure 19. Figure 25 corresponds to Figure 21, with the difference that pump radiation sources, here LEDs, now directly emit the pump radiation LB from the side into a glass substrate or the like, which is part of the sensor element layer SES. The glass substrate serves as a planar optical waveguide that evenly distributes the pump radiation LB from the pump radiation sources LEDs in the sensor element layer SES. Otherwise, this document refers to the description of the device components also present here, and their function and interaction, in the descriptions of Figures 19 and 21. Figure 26 shows the operating principle of the sensor element layer SES, as it is used in the devices of Figures 11 to 16.and 19 to 25 is proposed. The two light-emitting diodes (LEDs) LED1, LED2 form the primary pump radiation sources for the generation of the pump radiation LB with the pump radiation wavelength ^. pmpThe primary pump radiation sources, in the form of LEDs LED1 and LED2, emit the pump radiation LB laterally into the planar first optical functional element, which is a glass plate GP. The pump radiation LB propagates from the injection point into the planar first optical functional element – ​​here, the glass plate GP – with the intensity decreasing continuously with distance from the injection point. A portion of the pump radiation LB exits the first optical functional element (glass plate GP) towards a first surface EO and enters the SI layer. The SI layer preferably comprises a plurality of crystals and / or nanocrystals NK, which preferably include paramagnetic centers NV.The crystals and nanocrystals NK are preferably embedded in a substrate material of the SI layer that is suitable for electromagnetic radiation with the pump radiation wavelength ^. pmp is transparent. The crystals and nanocrystals NK are preferably embedded in a substrate material of the SI layer, which is transparent to electromagnetic radiation with the fluorescence radiation wavelength ^. fl is transparent. The crystals and nanocrystals NK are preferably embedded in a substrate material of the SI layer, which is suitable for pump radiation with the pump radiation wavelength ^. pmp is transparent. The crystals and nanocrystals NK are preferably embedded in a substrate material of the SI layer, which is transparent to fluorescence radiation FL with the fluorescence radiation wavelength ^. flis transparent. Part of the pump radiation LB in the SI layer irradiates paramagnetic centers of crystals and nanocrystals NK in the SI layer. Due to the irradiation with pump radiation LB of the pump radiation wavelength ^ pmpParamagnetic centers of crystals and nanocrystals NK in the SI layer emit fluorescence radiation FL. A reflective coating BM reflects the portion of the fluorescence radiation FL that does not exit the SI layer towards the photodetector array 1, but rather in the opposite direction back into the SI layer. The reflective coating BM also reflects the portion of the pump radiation LB that does not exit the SI layer towards the photodetector array LSA, but rather in the opposite direction back into the SI layer. 36 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. In the example shown in Figure 26, the reflective coating BM is covered on the back side with an optional support material I TM. Figure 27: Figure 27 schematically illustrates the simplified operating principle of the sensor element layer SES, as proposed in devices shown in Figures 19 to 25.Figure 27 essentially corresponds to Figure 26, wherein a dichroic mirrored optional layer DM is applied to the second surface ZO of the first optical functional element (glass plate GP). The optional dichroic mirrored layer DM is preferably essentially transparent to electromagnetic radiation with the fluorescence radiation wavelength ^. fl The optional dichroic mirrored layer DM is preferably essentially NOT transparent to electromagnetic radiation with the pump radiation wavelength ^ pmp The optional dichroic mirrored layer DM is preferably essentially transparent to fluorescence radiation FL with the fluorescence radiation wavelength ^. fl The optional dichroic mirrored layer DM is preferably essentially NOT transparent to pump radiation LB with the pump radiation wavelength ^. pmpThe optional dichroic mirrored layer DM preferably reflects pump radiation LB with the pump radiation wavelength ^. pmpThe radiation exiting the first optical functional element (glass plate GP) via the second surface ZO of the first optical functional element (glass plate GP) is reflected back into the first optical functional element (glass plate GP). This exposes the paramagnetic centers NV in the crystals and / or nanocrystals NK of the SI layer to a maximum intensity of the pump radiation LB. This further improves the signal-to-noise ratio. Figure 28 largely corresponds to Figure 27, which shows the operating principle of the sensor element layer SES as proposed in devices shown in Figures 19 to 25. Figure 28 differs from Figure 27 by the inclusion of a diffuser layer DS. The following explanations of Figure 28 are also found in the preceding text.Unfortunately, the intensity distribution of the pump radiation LB emitted from the surface of the glass plate GP at a point on the surface of the glass plate GP is dependent on the inverse square of the distance of this point on the surface of the glass plate GP from the respective pump radiation source LED1, LED2. This distance dependence can be compensated for by a diffuser structure in a diffuser layer DS on this surface of the glass plate GP. Preferably, the surface of the glass plate GP facing away from the photodetector array LSA is provided with a diffuser structure in a diffuser layer DS, which ensures homogeneous illumination of the layer SI and thus of the paramagnetic centers contained in the layer SI with pump radiation LB by the LEDs LED1, LED2.This system, consisting of a glass plate GP, the LEDs LED1, LED2, which emit pump radiation LB into the material of the glass plate GP from the edges of the glass plate GP, the diffuser layer DS and the layer SI with the paramagnetic centers NV, is ultimately a flat area lighting system with: a) a planar pump radiation source (LED1, LED2, GP) for pump radiation LB with the pump radiation wavelength ^. pmp, comprising a substrate and at least one substantially non-pixelated pump radiation LB emitting region formed on the substrate (glass wafer GP), which emits pump radiation LB from at least one pump radiation LB emitting side of the planar pump radiation source in every direction (downward-facing surface of the glass plate GP); and b) a pump radiation LB-directing optical layer – for example, the glass plate GP – which is arranged on the at least one pump radiation LB emitting side (edge ​​of the glass plate GP) above the pump radiation LB emitting region of a point-like or planar pump radiation source (exemplary LEDs LED1, LED2), wherein the pump radiation LB-directing optical layer – 37 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown, in particular the glass plate GP – preferably deflects pump radiation LB away from one direction,The side of the planar or point-like pump radiation source (GP, LED1, LED2) that emits light perpendicular to the surface of the pump radiation LB (light propagation plane of the pump radiation LB in the glass plate GP). In one embodiment of the flat area lighting system, the pump radiation LB-directing optical layer (glass plate GP) has a structured first surface (underside of the glass plate GP) that is located adjacent to the side emitting the pump radiation LB of the point-like or planar pump radiation source (LEDs LED1, LED2). In another embodiment of the flat area lighting system, the pump radiation LB-directing optical layer (glass plate GP) has a flat first surface that is located perpendicular to the side emitting the pump radiation LB of the point-like or planar pump radiation source (LEDs LED1, LED2). In another embodiment of the flat area lighting system, the pump radiation LB-directing optical layer (glass plate GP) has a flat first surface that is located perpendicular to the side emitting the pump radiation LB of the point-like or planar pump radiation source (LEDs LED1, LED2).The optical layer (glass plate GP) has a flat first surface that is positioned opposite the side of the planar pump radiation source (LEDs LED1, LED2) emitting the pump radiation LB. In one embodiment of the flat area illumination system, the structured first surface of the optical layer (glass plate GP) that directs the pump radiation LB has triangular prisms or a diffuser layer DS applied to the first surface of the optical layer (glass plate GP) that directs the pump radiation LB, for example, as a diffuser. In another embodiment of the flat area illumination system, the structured surface has, for example, cylindrical lenses or other optical and / or micro-optical functional elements. In another embodiment of the flat area illumination system, the structured surface has a multitude of wedge-shaped structures that have a long axis.wherein the axes of the wedge-shaped structures are preferably aligned in a common direction. In one embodiment of the flat area lighting system, an area pump radiation source comprises OLEDs or VCSELs as LEDs LED1, LED2. In one embodiment of the flat area lighting system, the pump radiation LB-directing optical layer (glass plate GP) has a flat first surface which is arranged opposite the side of the point-shaped or area pump radiation source (LEDs LED1, LED2) emitting the pump radiation LB, wherein the area pump radiation sources (LEDs LED1, LED2) preferably comprise OLEDs or VCSELs as LEDs LED1, LED2. In one embodiment of the flat area lighting system, the area lighting system comprises a diffuser in a diffuser layer DS, which is located between the pump radiation LB-directing,The optical layer and the planar pump radiation source are arranged. In one embodiment of the flat area lighting system, the system comprises a second optical layer, which guides the pump radiation LB, and is arranged above and parallel to the pump radiation LB-guiding optical layer. In one embodiment of the flat area lighting system, for example, the pump radiation LB-guiding optical layer is subdivided into a plurality of regions, and the pump radiation LB-guiding structures in one region are oriented at an angle that differs from the angle of light-guiding structures in a second region. Preferably, the SI layer with the paramagnetic centers is located on the surface of the flat area lighting system, for example, on the surface of a diffuser layer DS of a diffuser.which is preferably located on a surface of the aforementioned glass plate GP. The flat area illumination system thus preferably comprises ^ pump radiation sources, here exemplified by the pump radiation sources LED1, LED2, ^ a pump radiation LB transporting layer, here the glass plate GP, 38 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown ^ where the pump radiation sources LED1, LED2 transport a pump radiation LB with the pump radiation wavelength ^, pmp into a layer transporting this pump radiation LB, here the glass plate GP, the pump radiation LB is injected from the side via an edge of the glass plate GP, ^ a diffuser layer DS, which is a further optical layer that directs pump radiation LB, ^ wherein the diffuser layer DS is arranged on the side emitting at least one pump radiation LB above the area of ​​the planar pump radiation source emitting pump radiation LB, wherein the optical layer directing pump radiation LB preferably deflects pump radiation LB away from a direction that preferably runs substantially perpendicular to the surface of the side of the point-like or planar pump radiation source (in particular the LEDs LED1, LED2) emitting pump radiation LB. The diffuser layer DS thus preferably directs the pump radiation LB in the glass plate GP onto the layer SI with the paramagnetic centers preferably located on the diffuser layer DS,which subsequently emit fluorescence radiation FL. The diffuser layer DS can also be achieved by matting and / or structuring the first surface EO of the glass plate GP. The second surface ZO of the glass plate GP can also have a diffuser layer DS. For example, by varying the roughness of the surface of the glass plate GP, a locally different proportion of the pump radiation LB is coupled out of the glass plate GP and into the SI layer. For example, the surface of the glass plate can be structured such that at a greater distance from the pump radiation sources (LEDs LED1, LED2), a larger proportion of the pump radiation LB is coupled out of the glass plate GP and into the SI layer with the paramagnetic centers. This can achieve,that, with a homogeneous external magnetic field and a homogeneous magnetic flux density B, the intensity of the generated fluorescence radiation FL at points on the surface of layer SI no longer depends essentially on the distance to the pump radiation sources, here the LEDs LED1 and LED2. The planar pump radiation source thus constructed, consisting of LEDs LED1 and LED2, a glass plate GP, and an optional diffuser layer DS or diffuser surface structure of the glass plate GP, then irradiates the paramagnetic centers NV of layer SI with pump radiation LB with the pump radiation wavelength ^. pmpThe SI layer preferably comprises crystals NK, particularly preferably micro- or nanocrystals NK, with these paramagnetic centers NV, which are preferably NV centers NV in diamond crystals. The glass plate GP also serves as the support material II TM2. Figure 29 shows an exemplary and schematically simplified, proposed system. The motor comprises the stator housing GH. The magnetic stator circuit is attached to the stator housing GH. The magnetic stator circuit can, for example, comprise a ferrite body. The exemplary motor further comprises the stator coil windings SL. The motor also comprises the shaft AX, which the stator preferably rotatably mounts. Preferably, the shaft AX is rotatably mounted in the stator about its longitudinal axis. Preferably, the shaft AX is secured against displacements along its longitudinal axis. A rotor housing GHR is preferably attached to the axis AX.A magnetic rotor circuit RMK is preferably attached to the rotor housing GHR and / or the shaft AX. The magnetic rotor circuit RMK preferably comprises a ferromagnetic laminated core or the like. In the case of a BLDC motor, several permanent magnets PM are typically attached to the magnetic rotor circuit RMK and / or the rotor housing GHR for motor excitation. An air gap AG is typically located between the stator coils SL and the permanent magnets PM. A half-bridge controller, which can be arranged, for example, within an integrated circuit IC, controls, for example, several half-bridges HB by means of half-bridge control lines HSL. The half-bridges HB preferably energize, for example, the three motor phases MPH. U MPH V , MPH W, which are connected to the stator coils SL. In the example of Figure 29, the exemplary motor is three-phase. The exemplary motor preferably comprises N*3 stator coils. Here, N is a positive integer greater than 0. In the following Figure 30, N is exemplary N=2, and in the following Figures 31 and 32, N is exemplary N=5. The half-bridges HL commutate the control of the stator coils SL as a function of the half-bridge control lines HSL using the motor phases MPH. The integrated circuit IC generates the transmit signal. The pump radiation source LED generates a modulated pump radiation LB as a function of the transmit signal. In the example of Figure 29, the pump radiation source LED transmits the pump radiation LB through a dichroic mirror DM and radiates the pump radiation LB into the optical fiber LWL.In the example shown in Figure 28, the motor housing GH has at least one opening OF through which the optical fiber LWL enters the housing (GH, GHR). At the second end of the optical fiber LWL is the sensor element SE with the paramagnetic centers NV. The sensor element SE preferably comprises a plurality of crystals with paramagnetic centers NV, which preferably have a statistically uniformly distributed, different crystal orientation and are embedded in a matrix material, for example, a temperature-resistant optical adhesive that is transparent to fluorescence radiation FL and pump radiation LB. Typically, the matrix material mechanically connects these crystals with the paramagnetic centers to the second end of the optical fiber LWL. Preferably, the actual optical fiber LWL has a diameter of approximately 100 µm or less.Larger optical fibers (OFs) are conceivable, but they interfere more with the motor's design. Additionally, a strain relief for the OF is typically required. The pump radiation source (LED) feeds the pump radiation (LB) into the first end of the OF. The pump radiation (LB) strikes the crystals with paramagnetic centers (NV) in the sensor element (SE). Preferably, the sensor element (SE) comprises diamond crystals with NV centers as paramagnetic centers (NV). Typically, the pump radiation (LB) excites the crystals with the paramagnetic centers (NV) to emit fluorescence radiation (FL), which depends on the magnetic flux density (B) passing through the paramagnetic centers (NV). Preferably, the sensor element (SE) is located at the second end of the OF. Preferably, the sensor element (SE) has a diameter smaller than the diameter of the OF.Typically, the paramagnetic centers NV of the sensor element SE re-emit at least some of the fluorescence radiation FL into the optical fiber LWL at the second end of the optical fiber LWL. The fluorescence radiation FL exits the optical fiber LWL at the other, first end and, for example, is deflected by the dichroic mirror DM and illuminates the photodetector PD. The dichroic mirror DM does not deflect the pump radiation LB backscattered by the sensor element SE and / or other device components towards the photodetector PD. As a result, the photodetector PD essentially receives only fluorescence radiation FL.The photodetector PD preferentially converts the intensity of the fluorescence radiation FL and / or the phase shift of the time-dependent intensity profile of the fluorescence radiation FL relative to the transmitted signal from the pump radiation source LED into a corresponding received signal. The integrated circuit IC evaluates these received signals and determines a position value of the magnetized body MK, which in this case is the motor rotor. Using its half-bridge control for the half-bridges HB, the integrated circuit IC controls the commutation of the motor via the half-bridge HB as a function of these received signals and thus as a function of the time-dependent intensity profile I(FL(t)) of the fluorescence radiation FL.The special feature of the measurement method 40 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown in Figure 29 is that the optical fiber LWL together with the sensor element SE typically does not include any ferromagnetic or electrically conductive materials and therefore does not substantially influence the magnetic field of the motor. Furthermore, this design ensures galvanic isolation between the sensor element SE and the electrical lines of the device and within the motor. In addition, the system is immune to electromagnetic waves. It is thus EMC robust and does not itself emit any interfering electromagnetic radiation other than the typically non-interfering pump radiation LB and / or the also typically non-interfering fluorescent radiation Fl.For example, the integrated circuit IC can detect a zero crossing of the magnetic flux density B in the air gap AG or of the magnetic flux density B of the stray field of the air gap AG. Preferably, the sensor element is placed in the air gap AG. The intensity of the fluorescence radiation FL of the crystals of the sensor element SE depends on the magnetic flux density B at the location of the paramagnetic centers NV, here, for example, the NV centers NV of the diamonds, of the sensor element SE. Preferably, the integrated circuit IC determines one or more measured values ​​for the intensity of the fluorescence radiation FL and / or one or more time-dependent measured values ​​for the intensity of the fluorescence radiation FL and / or the phase shift of the time-dependent intensity of the fluorescence radiation FL relative to the transmitted signal of the pump radiation source LED.Thus, one or more measured values ​​for the intensity of the fluorescence radiation FL and / or one or more time-dependent measured value profiles for the intensity of the fluorescence radiation FL and / or the phase shift of the time-dependent intensity profile of the fluorescence radiation FL relative to the transmitted signal of the pump radiation source LED each represent a measure of the magnetic flux density B at the location of the paramagnetic centers NV, here exemplified by the NV centers NV, in the sensor element SE. For example, the integrated circuit IC can evaluate the zero crossing of the AC signal component of these measured values ​​or measured value profiles and preferably control the commutation of the motor by means of the half-bridges HB as a result. In the example shown in Figure 29, the sensor element SE is placed in the magnetic flux density B of the air gap AG of the motor. The magnetic stator circuit SMK is attached to the housing GH.An optional ceramic mechanical housing (MH) protects the optical fiber (LWL) as an example. A filling compound (FM) seals the opening (OF) in the motor. The external data bus (EXTDB) enables the integrated circuit (IC) to communicate with a higher-level control system. The EXTDB can be a wired or wireless data connection. Multiple parallel data connections, which can be implemented differently, are possible.For the purposes of this document, the motor rotor is a magnetized body MK, whose position is determined by the integrated circuit IC using the sensor element SE and the measured values ​​of the intensity of the fluorescent radiation FL and / or one or more time-dependent measured values ​​for the intensity of the fluorescent radiation FL and / or the phase shift of the time-dependent intensity of the fluorescent radiation FL relative to the transmitted signal of the pump radiation source LED. The particular advantage is that the integrated circuit IC can also determine the rotor position when the motor is stationary.The integrated circuit can, for example, determine a value for the intensity of the fluorescence radiation FL and / or the phase shift of the temporal intensity profile of the fluorescence radiation FL relative to the transmitted signal of the pump radiation source LED, compare it with a table of values, and from this determine one or more probabilities for one or more potential rotor positions.With only one sensor element SE, the integrated circuit IC would then have to move the rotor (here the magnetized body MK) of the electric motor slightly by controlling the half-bridges HB and then determine a further value for the intensity of the fluorescence radiation FL and / or a phase shift of the temporal intensity profile of the fluorescence radiation FL relative to the transmitted signal of the pump radiation source LED and compare it with a table of values, and from this determine one or more further probabilities for one or more further potential rotor positions. If necessary, the integrated circuit IC repeats this last step until it has determined enough further values ​​for one or more further potential rotor positions.The integrated circuit IC then preferably determines the most probable rotor position from the potential rotor positions and the further potential rotor positions as the identified rotor position of the rotor (here, the magnetized body MK) of the electric motor. Preferably, the integrated circuit IC uses this rotor position information to control the commutation of the current supply to the half-bridges HB for the current supply to the stator coils SL of the electric motor.Preferably, the integrated circuit IC controls and / or regulates the motor phase current I depending on the determined rotor position and / or depending on one or more measured values ​​for the intensity of the fluorescence radiation FL and / or on one or more time-dependent measured values ​​for the intensity of the fluorescence radiation FL and / or the phase shift of the time-dependent intensity profile of the fluorescence radiation FL relative to the transmitted signal of the pump radiation source LED. MPHU the U-motor phase MPH U and / or the motor phase voltage V MPHU the U-motor phase MPH UPreferably, the integrated circuit IC controls and / or regulates, depending on the determined rotor position and / or depending on one or more measured values ​​for the intensity of the fluorescence radiation FL and / or on one or more time-dependent measured values ​​for the intensity of the fluorescence radiation FL and / or the phase shift of the time-dependent intensity profile relative to the transmitted signal of the pump radiation source LED, a PWM modulation of the motor phase current I. MPHUV the U-motor phase MPH U and / or PWM modulation of the motor phase voltage V MPHU the U-motor phase MPH U For example, the pulse width and / or the PWM period and / or the pulse density and / or the pulse amplitude and / or the duty cycle and / or the pulse duration of a pulse modulation of the motor phase current I can be MPHU the U-motor phase MPH Uand / or a pulse modulation of the motor phase voltage V MPHU the U-motor phase MPH UThe intensity of the fluorescence radiation FL depends on one or more measured values ​​for FL intensity and / or on one or more time-dependent measured values ​​for FL intensity and / or on the phase shift of the time-dependent intensity profile relative to the transmitted signal of the pump radiation source LED. Preferably, the integrated circuit IC controls and / or regulates the motor phase current I as a function of the determined rotor position and / or as a function of one or more measured values ​​for FL intensity and / or on one or more time-dependent measured values ​​for FL intensity and / or on the phase shift of the time-dependent intensity profile relative to the transmitted signal of the pump radiation source LED. MPHV the V-engine phase MPH V and / or the motor phase voltage V MPHVthe V-engine phase MPH V Preferably, the integrated circuit IC controls and / or regulates, depending on the determined rotor position and / or depending on one or more measured values ​​for the intensity of the fluorescence radiation FL and / or on one or more time-dependent measured values ​​for the intensity of the fluorescence radiation FL and / or the phase shift of the time-dependent intensity profile relative to the transmitted signal of the pump radiation source LED, a PWM modulation of the motor phase current I. MPHV the V-engine phase MPH V and / or PWM modulation of the motor phase voltage V MPHV the V-engine phase MPH VFor example, the pulse width and / or the PWM period and / or the pulse density and / or 42 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown the pulse amplitude and / or the duty cycle and / or the pulse duration of a pulse modulation of the motor phase current I MPHV the V-engine phase MPH V and / or a pulse modulation of the motor phase voltage V MPHV the V-engine phase MPH VThe intensity of the fluorescence radiation FL depends on one or more measured values ​​for FL intensity and / or on one or more time-dependent measured values ​​for FL intensity and / or on the phase shift of the time-dependent intensity profile relative to the transmitted signal of the pump radiation source LED. Preferably, the integrated circuit IC controls and / or regulates the motor phase current I as a function of the determined rotor position and / or as a function of one or more measured values ​​for FL intensity and / or on one or more time-dependent measured values ​​for FL intensity and / or on the phase shift of the time-dependent intensity profile relative to the transmitted signal of the pump radiation source LED. MPHW the W-engine phase MPH W and / or the motor phase voltage V MPHWthe W-motor phase MPH W Preferably, the integrated circuit IC controls and / or regulates, depending on the determined rotor position and / or depending on one or more measured values ​​for the intensity of the fluorescence radiation FL and / or on one or more time-dependent measured values ​​for the intensity of the fluorescence radiation FL and / or the phase shift of the time-dependent intensity profile relative to the transmitted signal of the pump radiation source LED, a PWM modulation of the motor phase current I. MPHW the W-engine phase MPH W and / or PWM modulation of the motor phase voltage V MPHW the W-engine phase MPH W For example, the pulse width and / or the PWM period and / or the pulse density and / or the pulse amplitude and / or the duty cycle and / or the pulse duration of a pulse modulation of the motor phase current I can be MPHW the V-engine phase MPH Wand / or a pulse modulation of the motor phase voltage V MPHW the V-engine phase MPH WThe intensity of the fluorescence radiation depends on one or more measured values ​​for FL intensity and / or on one or more time-dependent measured values ​​for FL intensity and / or the phase shift of the time-dependent intensity profile relative to the transmitted signal of the pump radiation source LED. The principle presented here is a time-division multiplexing principle, in which the integrated circuit IC causes a displacement of the magnetized body MK, here the rotor of the electric motor, and then determines the rotor position. Figure 30 shows an exemplary system according to the proposal with an exemplary BLDC motor, in which a space-division multiplexing principle is used instead of the time-division multiplexing principle of Figure 29. The motor in Figure 30 has a rotor as a magnetized body MK, which is rotatably mounted about a motor axis AX. In this motor, N=2 is used.Because 2 x 3 = 6, the motor stator has six pole shoes P1, P2, P3, P4, P5, P6. Each of the six pole shoes P1, P2, P3, P4, P5, P6 of the stator has an associated stator coil of six stator coils SL1, SL2, SL3, SL4, SL5, SL6. In the example shown in Figure 30, the six stator coils SL1, SL2, SL3, SL4, SL5, SL6 are connected in series to form stator coil pairs. Here, the first stator coil SL1 and the fourth stator coil SL4 form the first stator coil pair. Here, the second stator coil SL2 and the fifth stator coil SL5 form the second stator coil pair. Here, the third stator coil SL3 and the sixth stator coil SL6 form a third stator coil pair. The three stator coil pairs of the six stator coils SL1, SL2, SL3, SL4, SL5, and SL6 are connected in a delta configuration as shown in Figure 30. A star configuration would also be possible instead of a delta connection.The three connecting nodes of the delta connection from the three stator coil pairs of the six stator coils SL1, SL2, SL3, SL4, SL5, SL6 form the three motor phases MPH. U , 43 / 89 © Elmos Semiconductor SE, IP Management; Elmo's AZ: 01602DEWO; WIPO AZ: unknown MPH V , MPH W, hereinafter collectively referred to as motor phases MPH. The rotor forms the magnetized body MK. The rotor (the magnetized body MK) is preferably rotationally symmetrical. Preferably, the rotor (the magnetized body MK) is rotatable about the motor axis AX. In the example of Figure 30, the rotor (the magnetized body MK) has, by way of example, M = four magnetized regions MB. Preferably, M and 3xN are chosen differently. (Here 4 and 6) Preferably, M / (3xN) = 2 / 3. Two of the magnetized regions MB of the rotor (the magnetized body MK) exhibit, by way of example, a magnetic north pole N on the surface of the rotor (the magnetized body MK). Two of the magnetized regions MB of the rotor (the magnetized body MK) exhibit, by way of example, a magnetic south pole S on the surface of the rotor (the magnetized body MK).During one revolution of the rotor (of the magnetized body MK) about the axis AX, magnetized regions MB, exhibiting a magnetic south pole S on the surface of the rotor (of the magnetized body MK), alternate with magnetized regions MB, exhibiting a magnetic north pole N on the surface of the rotor (of the magnetized body MK). The second sensor element SE2 is a sensor element SE as defined in this document and preferably comprises one or more crystals with one or more paramagnetic centers NV, preferably NV centers NV in one or more diamonds, which are preferably statistically equally oriented differently. The second sensor element SE2 is preferably located in the second air gap AG2 between the surface of the second pole shoe P2 and the surface of the magnetized body MK, i.e., the rotor of the motor.The second air gap AG2 is an air gap AG as defined in this document. In the example shown in Figure 30, the second sensor element SE2 is optically connected to a second light transmission path, which is represented here by the second optical fiber LWL2. The second pump radiation source LED2 emits a second pump radiation LB2. The second light transmission path, here the second optical fiber LWL2, transports the second pump radiation LB2 from the first end of the second light transmission path, here from the first end of the second optical fiber LWL2, to the second sensor element SE2 at the second end of the second light transmission path, here to the second end of the second optical fiber LWL2, and irradiates the second sensor element SE2 with the second pump radiation LB2.Due to irradiation with the second pump radiation LB2, the paramagnetic centers NV, here for example NV centers NV, in the crystals, here for example in the diamond crystals, of the second sensor element SE2 emit a second fluorescence radiation FL2. The second light transmission path, here the second optical waveguide LWL2, captures at least a portion of the second fluorescence radiation FL2 at its second end and transports this second fluorescence radiation FL2 to its first end. The second fluorescence radiation FL2 emerges from the second light transmission path, here from the second end of the second optical waveguide LWL2.A second dichroic mirror DM2 transmits the second fluorescence radiation FL2 emitted from the second optical path, here from the second optical fiber LWL2, to the second photodetector PD2 and separates the second fluorescence radiation FL2 emitted from the second optical path, here from the second optical fiber LWL2, from the second pump radiation LB2. The second photodetector PD2 typically generates a second received signal from the intensity of the second fluorescence radiation FL2. The first sensor element SE1 is a sensor element SE as defined in this document and preferably comprises one or more crystals with one or more paramagnetic centers NV, preferably NV centers NV in one or more diamonds, which are preferably statistically equally oriented differently.The first sensor element SE1 is preferably located in the first air gap 44 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown AG1 between the surface of the first pole shoe P1 and the surface of the magnetized body MK, i.e., the motor rotor. The mounting point of the first sensor element SE1 is preferably rotated by an angle k*2^ / (3xN)‐^1 relative to the mounting position of the second sensor element SE2 with respect to the motor axis AX. Here, k is a positive integer greater than 0 between 0 and N and less than N.The non-zero additional first angle ^1 ensures that, with 3xN rotational symmetry of the stator (here, for example, N=2 => for example, sixfold rotational symmetry) and with M rotational symmetry of the rotor (here, M=4), the position of the first sensor element SE1 in the first air gap AG1 relative to the first pole piece P1 differs from the position of the second sensor element SE2 in the second air gap AG2 relative to the second pole piece P2. This allows the integrated circuit IC to avoid displacing the rotor (the magnetized body MK) when determining the rotor position (the position of the magnetized body MK) relative to the sensor elements SE1 and SE2. The first air gap AG1 is an air gap AG as defined in this document.In the example shown in Figure 30, the first sensor element SE1 is optically connected to a first light transmission path, which is represented here by the first optical fiber LWL1. The first pump radiation source LED1 emits a first pump radiation LB1. The first light transmission path, here the first optical fiber LWL1, transports the first pump radiation LB1 from the first end of the first light transmission path, here from the first end of the first optical fiber LWL1, to the first sensor element SE1 at the second end of the first light transmission path, here to the second end of the first optical fiber LWL1, and irradiates the first sensor element SE1 with the first pump radiation LB1.Due to irradiation with the first pump radiation LB1, the paramagnetic centers NV, here for example NV centers NV, in the crystals, here for example in the diamond crystals, of the first sensor element SE1 emit a first fluorescence radiation FL1. The first light transmission path, here the first optical waveguide LWL1, captures at least a portion of the first fluorescence radiation FL1 at its second end and transports this first fluorescence radiation FL1 to its first end. The first fluorescence radiation FL1 emerges from the first light transmission path, here from the second end of the first optical waveguide LWL1.A first dichroic mirror DM1 transmits the first fluorescence radiation FL1 emitted from the first light transmission path, here from the first optical waveguide LWL1, to the first photodetector PD1 and separates the first fluorescence radiation FL1 emitted from the first light transmission path, here from the first optical waveguide LWL1, from the first pump radiation LB1. The first photodetector PD1 typically generates a first received signal from the intensity of the first fluorescence radiation FL1. The third sensor element SE3 is a sensor element SE as defined in this document and preferably comprises one or more crystals with one or more paramagnetic centers NV, preferably NV centers NV in one or more diamonds, which are preferably statistically equally oriented differently.The third sensor element SE3 is preferably located in the third air gap AG3 between the surface of the third pole shoe P3 and the surface of the magnetized body MK, i.e., the motor rotor. The mounting point of the third sensor element SE3 is preferably rotated by an angle p*2^ / (3xN)+^3 relative to the mounting position of the second sensor element SE2, with respect to the motor axis AX. Here, p is a positive integer greater than 0 between 0 and N and less than N.The non-zero additional third angle ^3 ensures that, with 3xN rotational symmetry of the stator (here, for example, N=2 => for example, sixfold rotational symmetry) and with M rotational symmetry of the rotor (here, M=4), the position of the third sensor element SE3 in the third air gap AG3 relative to the third pole piece P3 differs from the position of the second sensor element SE2 in the second air gap AG2 relative to the second pole piece P2. This allows the integrated circuit (IC) to avoid moving the rotor (the magnetized body MK) when determining the rotor position (the position of the magnetized body MK) relative to the sensor elements SE3 and SE2. The third air gap AG3 is an air gap AG as defined in this document.In the example shown in Figure 30, the third sensor element SE3 is optically connected to a first light transmission path, which here is formed by the third optical fiber LWL3. The third pump radiation source LED3 emits a third pump radiation LB3. The third light transmission path, here the third optical fiber LWL3, transports the third pump radiation LB3 from the first end of the third light transmission path, here from the first end of the third optical fiber LWL3, to the third sensor element SE3 at the second end of the third light transmission path, here to the second end of the third optical fiber LWL3, and irradiates the third sensor element SE3 with the third pump radiation LB3. Due to the irradiation with the third pump radiation LB3, the paramagnetic centers NV, here for example NV centers NV, in the crystals, here for example in the diamond crystals, of the third sensor element SE3 emit a third fluorescence radiation FL3.The third optical transmission path, here the third optical fiber LWL3, captures at least part of the third fluorescence radiation FL3 at its second end and transports this third fluorescence radiation FL3 to its first end. The third fluorescence radiation FL3 emerges from the third optical transmission path, here from the third optical fiber LWL3, at its second end. A third dichroic mirror DM3 transmits the third fluorescence radiation FL3 emerging from the third optical transmission path, here from the third optical fiber LWL3, to the third photodetector PD3 and separates the third fluorescence radiation FL3 emerging from the third optical transmission path, here from the third pump radiation LB3.The third photodetector PD3 typically generates a third received signal from the intensity of the third fluorescence radiation FL3. Figure 31 shows a typical time-dependent intensity value profile I(FL(t)) for the time-dependent intensity of the fluorescence radiation FL in an air gap AG of a motor with, for example, M=14. The time at which the 14 magnetized areas pass the pole shoe with the sensor element SE always results in a minimum and a maximum of the intensity of the fluorescence radiation FL. This results in 14 sub-phases per revolution EU of the rotor (here, the magnetized body MK). The sub-phases are numbered from 1 to 14 in Figure 31. After the minimum MinFL7 of the 7th...In the phase that occurs when passing the center of the seventh magnetized region MB on the surface of the rotor (here, the magnetized body MK) (maximum magnetic flux density B), the intensity of the fluorescence radiation FL increases again and reaches a seventh maximum MaxFL7 of the fluorescence radiation FL. This maximum MaxFL7 of the fluorescence radiation FL of the seventh phase is reached when the sensor element SE passes the transition between the seventh magnetized region MB on the surface of the rotor (here, the magnetized body MK) and the eighth magnetized region MB on the surface of the rotor (here, the magnetized body MK).Then the magnetic flux density B is minimal, since the seventh magnetized region MB on the surface of the rotor (here, the magnetized body MK) and the eighth magnetized region MB on the surface of the rotor (here, the magnetized body MK) should be magnetized differently. The intensity I(FL(t)) of the fluorescence radiation FL then decreases again until the minimum MinFL8 of the eighth phase, which occurs when passing the center of the eighth magnetized region MB on the surface of the rotor (here, the magnetized body MK) (maximum magnetic flux density B), is reached. The cycle repeats until all magnetized regions MB on the surface of the rotor (here, the magnetized body MK) have passed the sensor element SE and the next rotation of the rotor (here, the magnetized body MK) begins.During the seventh increase in intensity I(FL(t)) between the minimum MinFL7 of the 7th phase and the maximum MaxFL7 of the fluorescence radiation FL of the seventh phase, the intensity of the fluorescence radiation FL drops slightly at a seventh commutation time KP7, because the external magnetic field changes as a result of the commutation by the integrated circuit IC and the half-bridge HB. Figure 32 illustrates the effect of the first angle ^1 and the third angle ^3. This allows the three sensor elements of Figure 30 to detect three different intensities of the fluorescence radiation FL. For orientation, a second operating point AP2 for the intensity of the second fluorescence radiation FL2 of the second sensor element SE2 of Figure 30 is shown as a temporal reference point for the time of commutation.In the example shown in Figure 32, the first angle ^1 is chosen such that the intensity of the first fluorescence emission FL1 of the first sensor element SE1 in Figure 30 reaches a maximum. In the example shown in Figure 32, the third angle ^3 is chosen such that the intensity of the third fluorescence emission FL3 of the third sensor element SE3 in Figure 30 reaches a minimum. Figure 33. The minima / maxima control of Figure 32 has the disadvantage of being ambiguous. It is better to choose the first angle ^1 and the third angle ^3 such that the first intensity value for the first fluorescence emission FL1 of the first sensor element SE1 is approximately equal to the third intensity value for the third fluorescence emission FL3 of the third sensor element SE3. The integrated circuit (IC) can then deduce the rotor position from the ratio of the intensity values ​​and control the commutation accordingly.Glossary Paramagnetic Centers When using diamond as an exemplary crystal material for one or more crystals of the sensor element SE or sensor elements SE or sensor element layer SES or sensor element layers SES, the paramagnetic centers NV can be, for example, NV centers and / or SiV NV centers and / or TiV centers and / or GeV centers and / or SnV centers and / or NiN4 centers and / or PbV centers and / or ST1 centers. When diamond is used as the crystal material for the sensor element SE crystals, the paramagnetic centers NV can be, for example, NV centers and / or SiV centers and / or TiV centers and / or GeV centers and / or SnV centers and / or NiN4 centers and / or PbV centers and / or ST1 centers and / or TR1 centers and / or L2 centers. Other paramagnetic centers NV1 and / or crystal materials appear to be functionally equivalent.When NV centers are used in diamond as crystals of the sensor element SE or the sensor elements SE or the sensor element layer SES or the sensor element layers SES, the pump radiation LB preferably has a pump radiation wavelength ^. pmp exhibiting wavelengths in the range of 400 nm to 700 nm and / or preferably 450 nm to 650 nm and / or preferably 500 nm to 550 nm and / or preferably 515 nm to 540 nm. A wavelength of 532 nm is clearly preferred as the pump radiation wavelength. pmp In the case of the use of NV centers in diamond or in diamonds of the sensor element SE or the sensor elements SE or the sensor element layer SES or the sensor element layers SES, a laser diode of type Osram PLT5 520B, for example, as a pump radiation source LED with a 520 nm pump radiation wavelength, is used. 47 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown pmpsuitable. When using NV centers as paramagnetic centers NV in diamond crystals as crystals in the sensor element SE or the sensor element layers SES, the NV centers typically emit as paramagnetic centers NV of the sensor elements SE or the sensor element layers SES when irradiated with pump radiation LB of the pump radiation wavelength described above. pmp a fluorescence radiation FL with a typical fluorescence wavelength ^ flof approximately 637 nm. ZPL table^ The table is only an exemplary compilation of some possible paramagnetic centers. These can be used as qubits. This document particularly recommends the use of NV centers as paramagnetic centers of quantum dots or qubits of the quantum computer QC. The functionally equivalent use of other paramagnetic centers in other materials of the one or more crystals of the sensor element SE or the sensor element layers SES is expressly possible. The pump radiation wavelengths ^ pmp Pump radiation wavelengths LB are also examples. Other pump radiation wavelengths ^ pmpare generally possible if they are shorter than the wavelength of the ZPL to be excited. Material Impurity Center ZPL Exemplary Reference of Pump Radiation Crystal Wavelength (^pmp) in Sensor Element SE ==================================================================================== Diamond NV Center 520 nm, 532 nm Diamond SiV Center 738 nm 685 nm Diamond GeV Center 602 nm 532 nm Diamond SnV Center 620 nm 532 nm Diamond PbV Center 520 nm, 450 nm 552 nm 715 nm 532 nm Diamond ST1 Center 555 nm 532 nm Diamond TR12 Center 471 nm 410 nm Silicon G Center 1278.38 nm 637 nm Silicon Carbide VSI Center 862 nm(V1) 4H, 730 nm 858.2 nm(V1′) 4H 730 nm 917 nm(V2) 4H, 730 nm 865 nm(V1) 6H, 730 nm 887 nm(V2) 6H,730 nm 907 nm(V3) 6H 730 nm silicon carbide DV center 1078–1132 nm 6H 730 nm silicon carbide VCVSI center 1093–1140 nm 6H 730 nm silicon carbide CAV center 648.7 nm 4H, 6H, 3C 730 nm 651.8 nm 4H, 6H, 3C 730 nm 48 / 89 © Elmos Semiconductor SE, IP Management; Elmo's AZ: 01602DEWO; WIPO AZ: unknown 665.1 nm 4H, 6H, 3C 730 nm 668.5 nm 4H, 6H, 3C 730 nm 671.7 nm 4H, 6H, 3C 730 nm 673 nm 4H, 6H, 3C 730 nm 675.2 nm 4H, 6H, 3C 730 nm 676.5 nm 4H, 6H, 3C 730 nm Silicon carbide NCVSI center 1180 nm–1242 nm 6H 730 nm Support material^ The document presented here proposes, for example, a clear, colorless, liquid photopolymer as the support material for the SE sensor elements.for example, Norland Optical Adhesive 61. Further information is available at https: / / www.norlandprod.com / adhesives / noa%2061.html at the time of filing of the document submitted here. Norland Optical Adhesive 61 (“NOA 61”) is a clear, colorless, liquid photopolymer that cures upon irradiation with a curing wavelength ^, HIt cures in the ultraviolet wavelength range. As a 100% solids, one-component system, it offers many advantages in bonding applications where the adhesive may be exposed to UV light. Using NOA 61 eliminates the need for premixing, drying, or heat curing, as is common with other adhesive systems. The curing time is typically short and depends on the thickness of the layer applied for the sensor elements (SE) and the available UV light energy. It is particularly advantageous when the carrier material for the sensor elements (SE) meets Federal Specification MIL-A-3920 for optical adhesives. NOA 61, as the carrier material for the colloidal mixture of sensor element crystals (SE) with paramagnetic centers (NV) and the carrier material for the sensor elements (SE), meets this Federal Specification MIL-A-3920, dated February 21, 1977, for optical adhesives.The carrier material of the sensor elements SE should be able to establish the best possible optical connection to the surface of the carrier substrate for the respective sensor element SE or the respective sensor element layer SES.Accordingly, the substrate material of the sensor elements SE should provide the best possible optical and / or mechanical connection to FR-4 (Flame-Resistant-4) or PTFE (Polytetrafluoroethylene) surfaces, or surfaces of semiconducting materials, such as surfaces of circuit board materials, plastic sheet or film components, glass wafers, ceramic wafers, semiconductor wafers, CMOS wafers, BiCMOS wafers, bipolar wafers, III / V wafers, or similar materials, MEMS wafers, microelectronic circuits, MEOS wafers (micro electro optical system), or other components. MOEMS wafers etc.and / or from pieces of MOEMS wafers of microelectronic circuits and microelectronic functional elements and / or micro-optical functional elements and / or micromechanical functional elements and / or microfluidic functional elements, depending on the application. NOA61 generally meets these requirements, particularly across the required temperature range and typically the expected lifetime. However, this does not eliminate the need for product qualification. The use of a substrate material for the sensor elements SE is particularly advantageous, as it is recommended for bonding lenses, prisms, and mirrors for military, aerospace, and commercial optics, as well as for termination and splicing of optical fibers. NOA61 meets these requirements. However, NOA61 is only suitable for use within a limited temperature range.An alternative is to embed the crystals with the paramagnetic centers NV, for example, the diamond crystals with the NV centers, in a glass fiber or similar material as an optical functional element. According to the manufacturer, the substrate material of the sensor elements SE is typically characterized by excellent clarity, low shrinkage, and light flexibility. These properties are important so that the user can produce high-quality sensor elements SE and / or sensor element layers SES and achieve long-term performance under changing, aggressive environmental conditions. As desired for the substrate material of the sensor elements SE, NOA 61 cures using ultraviolet light as curing radiation, with maximum absorption in the range of 320–380 nanometers for the curing wavelength ^. H lies and has the highest sensitivity for the curing of NOA61 at a curing wavelength ^ Hat 365 nm. The recommended energy for complete curing is 3 joules / cm² at these curing wavelengths. H The curing of NOA 61 is not inhibited by oxygen, so all areas exposed to air cure to a non-sticky state when exposed to ultraviolet light as curing radiation. In most optical applications, curing with curing radiation occurs in two steps. First, a short, uniform exposure, known as pre-curing, is performed with curing radiation at a curing wavelength ^ HThe curing time is sufficiently long to solidify the bond and allow it to be moved / transported without disturbing its alignment. This is followed by extended curing under UV light as curing radiation to achieve complete crosslinking and solvent resistance of the adhesive, for example, NOA 61. In the example of NOA 61 as the substrate for the SE sensor elements, curing with UV radiation can be achieved in 10 seconds using a 100-watt mercury lamp at 6 inches. If a longer time is required for alignment, it can be extended to several minutes using a very low-intensity light source for curing radiation, in the case of the exemplary substrate for the SE sensor elements, NOA 61. Final curing can be achieved in 5 to 10 minutes with the 100-watt mercury lamp in the case of the exemplary substrate for the SE sensor elements.Pre-curing allows the user to quickly align and fix each individual optical fiber (OF) against the sensor element (SE), an electrical conductor, a potentially intended magnetic circuit, and / or the magnetized body (MK) if required, and minimizes the number of holding devices needed. After pre-fixing, excess adhesive can be wiped and / or rinsed off with a cloth moistened with alcohol or acetone as an example solvent. The optical fiber should be inspected at this point, and any rejects should be separated in methylene chloride. The coated area of ​​the sensor elements (SE) typically needs to be soaked in the solvent for rework and usually dissolves overnight. The time required to soak the substrate of the sensor elements (SE) is approximately [timeframe missing in original text].The ease of reworking the sensor element layer (SES) depends on the degree of curing and the size of the coating. After curing, NOA 61, as the substrate material for the sensor elements (SE) or the sensor element layer (SES), exhibits very good adhesion and solvent resistance, but it has not yet reached its optimal adhesion to glass and / or SiO2 semiconductor wafer surfaces. This is achieved by aging over a period of approximately one week, during which a chemical bond forms between the glass or SiO2 surface and the substrate material of the sensor elements (SE). This optimal adhesion can also be achieved by aging the sensor elements (SE) or the sensor element layer (SES) at 50°C for 12 hours in a temperature chamber.NOA 61 withstands temperatures from -15°C to 60°C before aging when used to coat the optical fiber. After aging, it withstands temperatures from -150°C to 125°C. This makes the substrate material for the sensor elements (SE) or the sensor element layer (SES) NOA 61 suitable for automotive applications. As a coating on the surface of the optical fiber, NOA 61 withstands 260°C for three hours and is resistant to reflow soldering. This document refers in this context to the still unpublished patent application DE 10 2023 111 858.7. This allows the sensor element (SE) or the sensor element layer (SES) and / or the proposed optical fiber to be used for measuring the total magnetic flux density up to these temperatures. The document presented here therefore proposes the use of a proposed optical fiber LWL and / or the sensor element SE or...the sensor element layer SES at temperatures above 100°C and / or even above 110°C and / or even above 120°C and / or even above 130°C and / or even above 140°C and / or even above 150°C and / or even above 160°C and / or even above 170°C and / or even above 180°C and / or even above 190°C and / or even above 200°C and / or even above 210°C and / or even above 220°C and / or even above 230°C and / or even above 240°C and / or even above 250°C and / or even above 260°C. It should be noted that the properties of the material of a proposed optical fiber LWL and / or the sensor element SE or the sensor element layer SES have not been taken into account here, which may no longer permit these temperature ranges, something that would have to be checked in the event of rework.Typical properties of a substrate material for sensor elements (SE) or sensor element layers (SES) include a solids content greater than 80%, a viscosity at 25°C greater than 250 cps, a refractive index of the hardened substrate material (TM) greater than 1.2, an elongation at break of less than 50% or more than 25% depending on the application, a modulus of elasticity less than 200,000 psi, a tensile strength greater than 3,000 psi, and a hardness greater than Shore D 60. Typical properties of NOA 61 as an example substrate material (TM) include a solids content of 100%, a viscosity at 25°C of 300 cps, a refractive index of the hardened polymer of the substrate material for sensor elements (SE) or sensor element layers (SES) of the colloidal mixture of 1.56, an elongation at break of 38%, and a modulus of elasticity of [psi value missing]. 150,000, a tensile strength of (psi) 3,000 and a hardness of Shore D 85.As already described, these methods are not limited in principle to the use of substrate material for the sensor elements SE or the sensor element layer SES (NAO 61 in, for example, an alcoholic solution) and these crystals with paramagnetic centers NV, in particular NV centers NV in diamond. For example, instead of diamonds with NV centers, crystals with SiV centers and / or with TiV centers and / or with GeV centers and / or with SnV centers and / or with NiN4 centers and / or with PbV centers and / or with ST1 centers can also be used as paramagnetic centers, whereby their suitability would have to be checked beforehand by a qualified person, if necessary during rework. Such alternative paramagnetic centers and / or materials for crystals must be suitable for fulfilling the technical purpose of the system to be manufactured, which would have to be checked at the beginning of each rework.To simplify the description, we do not present all possible variations here. However, the claim also encompasses such combinations. Therefore, other combinations of crystals of other materials and other substrate materials for the sensor elements SE or the sensor element layer SES, and other solvents for the substrate material of the sensor elements SE or the sensor element layer SES, can also be used if the technical problem to be solved by the system to be manufactured and the intended manufacturing method (coating and / or printing and / or local wetting) so require. In the following, the term "coating" is generally used. Where applicable, this term should also include the terms "coating," "coating," and / or "local wetting."The crystals can also be polycrystalline and then comprise various materials and layers. For example, they can be silicon nanocrystals and / or crystals and mixed crystals comprising, for example, III / V materials, which may be optically separated by a SiO2 layer or another layer in the relevant wavelength ranges (^. pmp , ^ fl ) are encased in a transparent insulating layer and preferably have suitable paramagnetic centers. Furthermore, numerous different transparent lacquers are known from the prior art, which can be tested for their suitability as substrate materials for the sensor elements SE or the sensor element layer SES when used instead of NOA61. The preceding descriptions use the term pump radiation LB to describe the pumping of the paramagnetic centers of the crystals or diamond crystals of the sensor elements SE or the sensor element layer SES. The pump radiation LB has a pump radiation wavelength ^ pmp If defect centers other than NV centers in diamond are used in the sensor element SE or the sensor element layer SES, a proposed device or method can emit light or electromagnetic radiation of other pump radiation wavelengths. pmp Use as pump radiation LB. This pump radiation LB must have the pump radiation wavelength ^. pmpTo reach the paramagnetic centers in the crystals, the structure of any electrical conductors and other structures present on the crystal surface should allow the pump radiation LB to pass towards the respective paramagnetic centers. Preferably, the surfaces of the crystals or diamond crystals are free of such conductors and structures. The sensor systems proposed here preferably utilize HD-NV diamonds (HDNV) with a high density of paramagnetic centers in the form of NV centers in the sensor element SE or in the sensor element layer SES, which determine the intensity I ist Detect the fluorescence radiation FL of the paramagnetic centers when irradiated with pump radiation LB. The pump radiation LB with the pump radiation wavelength ^ pmpcauses the respective paramagnetic center or centers, or group or groups of paramagnetic centers, in the crystals or diamond nanocrystals to emit fluorescence radiation FL with a fluorescence wavelength ^ fl when irradiated with pump radiation LB of the pump radiation wavelength ^ pmp Typically, when using NV centers in diamond as paramagnetic centers of the crystals or diamond nanocrystals, the fluorescence wavelength is ^ fl The fluorescence radiation FL of the NV centers is such that they appear red. It has been shown that, in connection with NV centers in diamond as paramagnetic centers of the crystals or diamond nanocrystals, light with a pump radiation wavelength ^ can, in principle, be emitted. pmpThe pump radiation LB of at most 700 nm and at least 500 nm is particularly suitable as pump radiation LB. In connection with the use of crystals of other materials instead of the diamond nanocrystals or as a supplement for the sensor element SE or the sensor element layer SES and correspondingly other paramagnetic centers, completely different wavelength ranges of the pump radiation wavelength can be achieved. pmp The pump radiation LB fulfills the same functions in the sensor system modified in this way. Therefore, the NV centers represent only one example of an embodiment of such a paramagnetic center. In particular, when using an NV center in diamond as a paramagnetic center in the crystals or diamond crystals, the pump radiation LB should have a 52 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown pump radiation wavelength ^ pmpexhibiting wavelengths in the range of 400 nm to 700 nm and / or preferably 450 nm to 650 nm and / or preferably 500 nm to 550 nm and / or preferably 515 nm to 540 nm. A wavelength of 532 nm is clearly preferred as the pump radiation wavelength. pmpLight or electromagnetic pump radiation LB, which is used to perform the same functions when employing other paramagnetic centers, particularly in materials other than NV centers in diamond, is also possible. The proposed sensor systems are therefore also applicable to other suitable paramagnetic centers, such as SiV centers, TiV centers, GeV centers, SnV centers, NiN4 centers, PbV centers, and / or ST1 centers, etc. However, the NV center in diamond is particularly suitable and can be produced in high density with high manufacturing yield, as described above. Advantageously, the pump radiation LB of the respective pump radiation source—here, the light source LED, which is preferably a laser or an LED—is pulsed by means of the transmit signal, depending on a pulsed alternating component of an LED modulation signal.The LED modulation signal is used as a measurement signal, i.e., as a reference signal for a look-in amplifier, for example a transmit and evaluation device, to measure the modulation of intensity I, which is converted into modulated electrical currents, in particular photoelectron currents or voltages, for example, of one or more receiver output signals S0 of one or more photodetectors (PD, LSA). istto amplify the fluorescence radiation FL with low noise. The influence of the modulation is known for individual NV centers in diamond. We refer in particular to Figures 3b and 3d of this document. Due to a high density of paramagnetic centers in the diamond nanocrystals ND, such as a high density of NV centers as in an HD-NV diamond, as described in the publications DE 10 2021 132 780 A1, DE 10 2021 132 781 A1, DE 10 2021 132 782 A1, DE 10 2021 132 783 A1, DE 10 2021 132 784 A1, DE 10 2021 132 785 A1, DE 10 2021 132 786 A1, DE 10 2021 132 787 A1, DE 10 2021 132 788 A1, DE 10 2021 132 790 A1, DE 10 2021 132 791 A1, DE 10 2021 132 793 A1, DE 10 2021 132 794 A1, as described, the contrast can be increased beyond the extent shown in those documents.Diamond crystals as crystals as sensor element material of a sensor element and / or a sensor element layer. The technical teaching presented here preferably uses HD-NV diamond crystals of the sensor elements SE or the sensor element layers SES. In this context, the document presented here refers to DE 10 2020 109 477 A1. An HD-NV diamond, as defined in this document, is a crystal with a particularly high density of paramagnetic centers NV. Due to this high density of paramagnetic centers NV, the fluorescence intensity curve and / or the fluorescence delay curve exhibit fluorescence features that cause coupling of these paramagnetic centers NV with other crystal structure elements. Such other crystal structure elements can be, for example: 1.Other paramagnetic centers NV of the same type aligned with the coupling paramagnetic center NV, for example, the coupling of an NV center to a similarly aligned NV center in diamond; 2. Other paramagnetic centers NV of the same type not aligned with the coupling paramagnetic center NV, for example, the coupling of an NV center to a non-aligned NV center in diamond; 53 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown 3. Other paramagnetic centers NV of a different type aligned with the coupling paramagnetic center NV, for example, the coupling of a SiV center and / or TiV center and / or GeV center and / or SnV center and / or NiN4 center and / or PbV center and / or ST1 center to a similarly aligned NV center in diamond; 4.Other paramagnetic centers NV of a different type that are not aligned with the coupling paramagnetic center NV, for example, the coupling of a SiV center and / or TiV center and / or GeV center and / or SnV center and / or NiN4 center and / or PbV center and / or ST1 center to a non-aligned NV center in diamond; 5. Nuclear spins with a magnetic moment of isotopes with such a spin that couple to the coupling paramagnetic center NV and that are part of the paramagnetic center, for example, the coupling of an NV center to the nucleus of the nitrogen in the NV center; 6. Nuclear spins with magnetic moment of isotopes with such spin that couple to the coupling paramagnetic center NV and that are not part of the paramagnetic center, i.e., for example, the coupling of an NV center to the nucleus of a . 13C isotopes in the vicinity of an NV center. The high density of paramagnetic centers NV of one type, for example, NV centers in diamond as a crystal, increases the probability that the distance of a paramagnetic center NV to such another crystal structure element is small enough to allow one of the couplings described above. This results in the fluorescence features indicating such a coupling between a paramagnetic center NV and another crystal structure element being more pronounced in the fluorescence intensity curve and the fluorescence delay curve of the crystal. On a diamond with a high density of NV centers, this means that the fluorescence features indicating such a coupling between an NV center and another crystal structure element are more pronounced in the fluorescence intensity curve and the fluorescence delay curve of the diamond.One characteristic feature of an HD-NV diamond, for example, is the coupling of one NV center to another NV center. Such a diamond thus comprises a pair of NV centers, consisting of two coupled and equivalent NV centers. According to the content of this document, this diamond (HDNV) is then preferably intended for use in a quantum technological device and / or in a quantum technological process. The HD-NV diamond can then be characterized, for example, by the fact that the intensity value curve of intensity I. ist the fluorescence radiation FL of the NV center pair upon irradiation with a pump radiation LB with a pump radiation wavelength (^ pmp ) depending on the value of the magnetic flux density (B) of an external magnetic field to the diamond (HDNV), a typical intensity drop (dip) of the fluorescence intensity value of intensity I is observed. istof the fluorescence radiation FL and / or a typical delay increase of the fluorescence delay value of more than 0.01% and / or more than 0.02% and / or more than 0.05% and / or more than 0.1% and / or more than 0.2% and / or more than 0.5% and / or 1% and / or more than 2% and / or more than 5% at an external magnetic flux density (B) acting on the diamond of about 34.0 mT (E 34.0,0) shows, which indicates an NV-NV interaction of equivalent pairs of NV centers and thus a small average distance between the equivalent NV centers. At this point, the present paper points out that diamonds generally have an extremely high density of P1 centers. Therefore, an increase in the NV center density does not usually lead to a change in the fluorescence feature that indicates NV / P1 coupling. 54 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown The size of the diamond nanocrystals is preferably less than 1 mm, better less than 500 µm, better less than 200 µm, better less than 100 µm, better less than 50 µm, better less than 20 µm, better less than 10 µm, better less than 5 µm, better less than 2 µm, better less than 1 µm, better less than 50 nm, better less than 200 nm, better less than 100 nm, better less than 50 nm.The size of the diamond nanocrystals can be smaller than 20 nm, 10 nm, 5 nm, 2 nm, or 1 nm. The authors believe that a size of 50 nm is optimal, although no corresponding experiments have been conducted. The same applies to the use of crystals made of other materials that functionally replace or supplement the diamond nanocrystals in the sensor elements (SE) or sensor element layers (SES). The technical teaching of this document is therefore expressly not limited to diamond crystals in the sensor elements (SE) or sensor element layers (SES) with diamond crystals and NV centers. If the text and / or claims mention diamond crystals and / or NV centers, a knowledgeable person may interpret this as referring to the use of other crystals and / or other paramagnetic centers.However, these must be explicitly tested for suitability in the respective application. Fluorescence features, as defined in this document, are characteristic points in the fluorescence intensity curve or the fluorescence delay curve. The fluorescence intensity curve is the graph of the fluorescence intensity values ​​(intensity Iist) of the fluorescence radiation FL of a diamond crystal plotted against the magnitude of the magnetic flux density B. The fluorescence delay curve is the graph of the time delay values ​​(time delay of the modulation of the intensity Iist) of the fluorescence radiation FL relative to the modulation of the intensity LB, or relative to the modulation signal for the intensity LB, or a signal derived therefrom, plotted against the magnitude of the magnetic flux density B.Fluorescence features in the fluorescence intensity curve are local minima and maxima along the curve. Fluorescence features in the fluorescence delay curve are local maxima and minima along the curve. The following list enumerates the fluorescence features of an HD-NV diamond (HDNV) with a high density of NV centers, as determined in the preliminary work for the cited publications. These are considered fluorescence features within the meaning of this document when using a diamond as the crystal in a proposed device or method. When this document refers to fluorescence features, at least the following fluorescence features are meant when using a diamond as the crystal in a proposed device or method.In the case of using other materials (see also the contents of the ZPL table), different fluorescence characteristics result, but these are generally attributable to analogous mechanisms. The use of these other materials and the corresponding paramagnetic centers and their fluorescence characteristics is covered by the disclosure of this document. In particular, the use of crystals from elements of Group II, Group VI, and Group IV is also covered by this disclosure. Isotopes of Group IV of the periodic table and from mixed crystals are also covered. However, the fluorescence characteristics are not limited to these. Fewer or more fluorescence characteristics may be used: 55 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. Pair No. approx.Type of fluorescence, position in intensity, delay, fluorescence, fluorescence, No. mT extremum, extremum, feature, feature (approx. min=minimum, min=minimum, category, group, feature, indication) *) max=maximum, max=maximum, mals, main, E0.0.0, 0, 0.00 mT, min, max, fluorescence feature, minor, E0.0.1b, 1, 2.10 mT, max, min, fluorescence feature, 0 mT, minor, E0.0.2b, 2, 3.80 mT, max, min, fluorescence feature, minor, E0.0.3b, 3, 5.30 mT, max, min, fluorescence feature, minor E9.5,8a 8 5.91 mT max min fluorescence feature secondary E9.5,7a 7 6.70 mT max min fluorescence feature secondary E9.5,6a 6 6.95 mT min max fluorescence feature secondary E9.5,5a 5 7.21 mT max min fluorescence feature 9.5 mT secondary E9.5,4a 4 7.85 mT min max fluorescence feature secondary E9.5,3a 3 8.12 mT max min fluorescence feature secondary E9.5,2a 2 8.43 mT min max fluorescence feature secondary E9.5.1a 1 8.82 mT max min fluorescence characteristic 56 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown Pair No. approx. Type of Fluorescence Position in Intensity Delay Fluorescence Fluorescence No. mT extremum extremum feature feature (approx. min=Minimum min=Minimum category group feature indication) *) max=Maximum max=Maximum mals Main E9.5,0 0 9.38 mT min max fluorescence feature Secondary E9.5,1b 1 10.05 mT max min fluorescence feature Secondary E9.5,2b 2 10.55 mT min max fluorescence feature Secondary E9.5,3b 3 11.10 mT max min fluorescence feature secondary feature E9.5,4b 4 11.60 mT min max fluorescence feature secondary feature E9.5,5b 5 11.89 mT max min fluorescence feature secondary feature E9.5.6b 6 12.12 mT min max fluorescence feature secondary E34.11a 11 31.22 mT max min fluorescence feature secondary E34.10a 10 31.67 mT min max fluorescence feature secondary 34mT E34.9a 9 31.78 mT max min fluorescence feature secondary E34.8a 8 32.00 mT min max fluorescence feature secondary E34.7a 7 32.25 mT max min fluorescence feature 57 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown pair No. approx. type of fluorescence type position in intensity delay fluorescence fluorescence No. mT extremum extremum feature feature fluorescence (approx.min=Minimum min=Minimum category group feature specification) *) max=Maximum max=Maximum times secondary E34.6a 6 32.63 mT min max fluorescence feature secondary E34.5a 5 32.72 mT max min fluorescence feature secondary E34.4a 4 32.96 mT min max fluorescence feature secondary E34.3a 3 33.24 mT max min fluorescence feature secondary E34.2a 2 33.53 mT min max fluorescence feature secondary E34.1a 1 33.65 mT max min fluorescence feature primary E34.0 0 33.98 mT min max fluorescence feature minor E34.1b 1 34.28 mT max min fluorescence feature minor E34.2b 2 34.38 mT min max fluorescence feature minor E34.3b 3 34.72 mT max min fluorescence feature minor E34.4b 4 34.97 mT min max fluorescence feature minor E34.5b 5 35.24 mT max min fluorescence feature 58 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown Pair No. approx.Type of fluorescence, position in intensity, delay, fluorescence, fluorescence, No. mT extremum, extremum, feature, feature (approx. min=minimum, category group, feature value) *) max=maximum, max=maximum, minor, E34.6b 6 35.35 mT min max fluorescence feature, minor, E34.7b 7 35.74 mT max min fluorescence feature, minor, E34.8b 8 36.03 mT min max fluorescence feature, minor, E34.9b 9 36.30 mT max min fluorescence feature, minor E34,10a 10 36.44 mT min max fluorescence feature secondary E34,11b 11 36.67 mT max min fluorescence feature secondary E34,12b 12 36.80 mT min max fluorescence feature secondary E34,13b 13 36.97 mT min min fluorescence feature primary 51.0 mT E51.0.0 0 51.00 mT min max fluorescence feature primary 59.5 mT E59.5.0 0 59.50 mT min max fluorescence feature secondary E102.4.9a 9 97.10 mT max min Fluorescence feature 102.4mT secondary E102.4.8a 8 97.60 mT min max fluorescence characteristic 59 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown Pair No. approx. Type of Fluorescence Position in Intensity Delay Fluorescence Fluorescence No. mT extremum extremum feature feature (approx. min=Minimum min=Minimum category group feature indication) *) max=Maximum max=Maximum mals Secondary E102.4,7a 7 98.00 mT max min fluorescence feature Secondary E102.4,6a 6 98.40 mT min max fluorescence feature Secondary E102.4,5a 5 98.90 mT max min fluorescence feature Secondary E102.4,4a 4 99.50 mT min max fluorescence feature secondary E102.4,3a 3 100.10 mT max min fluorescence feature secondary E102.4,2a 2 101.10 mT min max fluorescence feature secondary E102.4,1a 1 101.80 mT max min fluorescence feature primary E102.4,0 0 102.40 mT min max fluorescence feature secondary E102.4,1b 1 103.10 mT max min fluorescence feature secondary E102.4.2b 2 103.80 mT min max fluorescence feature secondary E102.4.3b 3 104.80 mT max min fluorescence feature secondary E102.4.4b 4 105.50 mT min max fluorescence feature 60 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown Pair No. approx. Type of Fluorescence Position in Intensity Delay Fluorescence Fluorescence No. mT extremum extremum feature feature (approx. min=Minimum min=Minimum category group feature indication) *) max=Maximum max=Maximum minor E102.4,5b 5 106.10 mT max min fluorescence feature minor E102.4,6b 6 106.60 mT min max fluorescence feature minor E102.4,7b 7 107.00 mT max min fluorescence feature minor E102.4,8b 8 107.30 mT min max fluorescence feature secondary E102.4,9b 9 107.70 mT max min fluorescence feature *) In this document also referred to as the characteristic magnetic flux density B of the fluorescence feature.The respective characteristic magnetic flux density B of each fluorescence feature is taken from the drawings. This document therefore explicitly recommends, when reproducing the technical teaching disclosed herein, a prior measurement of the precise values ​​of the characteristic magnetic flux densities B. The values ​​may, if necessary, be adjusted with an offset of max. ±1 mT and a proportional error of 1%. Essential Understanding of the Term "Essentially": The phrase "essentially" in the context of the presence of a property as defined in this document, when appearing in the text presented here, means that the absence of this property is permissible to such a minor degree that the function of the device and / or the fulfillment of its purpose is not impaired.The term "essentially" thus means, in the context of this document, that deviations from an ideal value are permitted, but the resulting technical effects impair the intended purpose of the method or device only to such an extent that the usability of the technical device or method for a user is not impaired, or only so slightly, that the user considers the actual technical effect to be sufficient compared to the ideal technical effect. Crystal (HDNV) Preferably, the object referred to in this document as a crystal (HDNV) comprises a single-crystal material.Unless the material is single-crystal, the subcrystals should preferably be single-crystal and preferably aligned to such an extent that the fluorescence features are essentially identical. Diamond is the preferred material of the crystal (HDNV). This document refers to German patent DE 10 2021 132 783 A1. However, the principles disclosed in this document can also be applied with other crystalline materials. Diamond is particularly suitable because cooling the electron spin configuration to a few mK is easily achieved by irradiation with pump radiation (LB), and the T2 times, especially those of NV centers, are relatively long. In some places in this text, only diamond is mentioned. Other crystals can also be used in these instances.In the case of using crystals made of materials other than diamond, the devices and methods disclosed in this document use different paramagnetic centers with different pump radiation wavelengths (^. pmp ) and with other fluorescence wavelengths (^ flOf particular interest here are silicon crystals, germanium crystals, and mixed crystals of elements from group IV of the periodic table. In some applications, the crystals are isotopically pure. For the purposes of this document, a material is considered isotopically pure when the concentration of isotopes other than the base isotopes that dominate the crystal material (HDNV) is so low that the technical purpose is achieved to a sufficient extent for the production and sale of products with an economically adequate production yield. This means that disturbances originating from such isotopic impurities do not, or at most only minimally, disrupt the functionality of the paramagnetic centers. Applied to diamond as the crystal material (HDNV), this means that the diamond preferably consists essentially of 12C isotopes are used as the basis isotopes, which have no magnetic moment. This is evident, for example, in the fluorescence intensity curve and / or the fluorescence delay curve, where the secondary fluorescence features (E) are absent. 102.4,9a , E 102.4,8a , E 102.4,7a , E 102.4,6a , E 102.4,5a , E 102.4,4a , E 102.4,3a , E 102.4,2a , E 102.4,1a , E 102.4,1b , E 102.4,2b , E 102.4,3b , E 102.4,4b , E 102.4,5b , E 102.4,6b , E 102.4,7b , E 102.4,8b , E 102.4,9b ) of the 102.4mT main fluorescence feature (E 102.4,0 ) are not present or less pronounced. Conversely, it may be desirable for the secondary fluorescence features (E) to be less pronounced or less pronounced. 102.4,9a , E 102.4,8a , E 102.4,7a , E 102.4,6a , E 102.4,5a , E 102.4,4a , E 102.4,3a , E 102.4,2a , E 102.4,1a , E 102.4,1b , E 102.4,2b , E 102.4,3b , E 102.4,4b , E 102.4,5b , E 102.4,6b , E 102.4,7b , E 102.4,8b , E 102.4,9b) of the 102.4mT main fluorescence feature (E 102.4,0 ) are particularly pronounced, as this allows for improved interpolation and calibration. Referring to diamond as the crystal material (HDNV), this means that to increase the intensity of the secondary fluorescence features, the diamond is preferentially composed primarily of 13 The diamond consists of ¹³C isotopes as basic isotopes, which possess a magnetic moment. A less preferred possibility is that, to increase the intensity of the secondary fluorescence features, the diamond preferably contains an increased proportion of 13 The document includes carbon isotopes as basic isotopes that possess a magnetic moment. The following distribution is assumed as the normal isotopic distribution: Isotope | Proportion K0 of isotopes without a magnetic moment in 100% CI sotop 12C 98,94 % Isotope 14C Traces Total proportion K 0G of the isotopes without 98.94% magnetic moment at 100% C total content K 1Gof the isotopes with magnetic moment of 1.06% at 100% C A reduction of the factor K 1G The document presented here defines an isotopically pure diamond crystal (HDNV) as one with a purity of more than 10%, or better, more than 25%. An increase in the factor K 1G by more than 10% and / or 62 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown better by more than 25% and / or better by more than 50% and / or better by more than 100% and / or better by more than 250% and / or better by more than 500% and / or better by more than 1000% and / or better by more than 2500% and / or better by more than 5000% (on K 1G>50%) interprets the presented text as an isotopically pure diamond crystal (HDNV) with enhanced secondary fluorescence features. The use of such diamonds for quantum technological systems within the meaning of the document submitted here and / or within the meaning of quantum technological devices and methods, in particular within the meaning of quantum technological sensor devices and measuring methods of the documents DE 10 2020 101 784 B3, DE 20 2020 106 110 U, WO 2021 089 091 A1 (PCT / DE 2020 / 100 953), WO 2020 089 465 A1 (PCT / EP 2019 / 079 992), WO 2020 260 640 A1 (PCT / EP 2020 / 068 110), WO 2021 018 654 A1 (PCT / EP 2020 / 070 485), WO 2021 151 429 A1 (PCT / DE 2021 / 100 069), WO 2021 083 448 A1 (PCT / DE 2020 / 100 827), WO 2020 239 172 A1 (PCT / DE 2020 / 100 430), WO 2001 073 935 A1 and WO 2021 013 308 A1 (PCT / DE 2020 / 100 648). The following applies to the entire text presented here. Reference list: 100 Transmission system; 200 Reflection system; ABSProcessing circuit ABS for the output signals AS of the photodetectors PD of the photodetector array LSA; ADC Analog-to-digital converter ADC; AE Evaluation electronics AE; AG Air gap AG; AG1 First air gap AG1; AG2 Second air gap AG2; AG3 Third air gap AG3; AMP Amplifier AMP; AO Imaging optics AO; AS Output signals AS of the photodetectors PD of the photodetector array LSA; ASM Control device ASM for the electromagnets of the auxiliary magnets HM; AX Axis AX; B Magnetic flux density B; BM Mirroring BM; BR Movement BR; BO Illumination optics BO; DB Internal data bus DB; DM Dichroic mirror DM or, in connection with the sensor element layer SES, a dichroic mirrored layer DM; DS Diffuser layer DS; EF Plane surface EF; EO First surface EO; EXTDB External data bus EXTDB; FL Fluorescence radiation FL with fluorescence radiation wavelength ^fl; FM Filling material FM; GH Stator housing GH; 63 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ:01602DEWO; WIPO AZ: unknown; GHR Rotor housing; GND Reference potential line to reference potential (preferably ground); GP Glass wafer or glass plate and / or planar optical waveguide; HB Half-bridges; HM Auxiliary magnets; HSL Half-bridge control lines; I(FL(t)) Time-dependent intensity profile of the fluorescence radiation intensity; I0 Electrical supply of the pump radiation source LED; IF Data bus interface; IMPHU Motor phase current of the U-motor phase; IMPHV Motor phase current of the V-motor phase; IMPHW Motor phase current of the W-motor phase; Ipmp Electrical pump current of the pump radiation source LED to supply the pump radiation source LED with electrical energy; ^fl Fluorescence radiation wavelength ^fl; ^pmp Pump radiation wavelength ^pmp; LB Pump radiation LB with pump radiation wavelength ^pmp; LED Pump radiation source LED;LED1, LED2 Light-emitting diodes (LEDs) LED1, LED2 as pump radiation sources LED; LSA Photodetector array LSA of the fluorescence camera. The photodetector array LSA typically comprises an array of photodetectors PD; OWL Optical fiber OWL; µC Computer core µC; MB Magnetized area MB of the magnetized body MK; MEM Memory MEM; MH Mechanical casing MH; MI Mirror MI; MK Magnetized body MK; The magnetized body MK should be wholly or at least partially magnetizable. The magnetized body MK can be wholly or partially rigid or flexible. The magnetized body MK preferably has at least one surface that has magnetized areas MB. This surface can be smooth or textured. This surface can be flat or curved or have a more complex surface shape. The magnetized body MK can have complex or simple shapes. The magnetized body MK can be inhomogeneously magnetizable or homogeneously magnetizable.be magnetizable. The magnetized body MK can include hard magnetic and soft magnetic materials. The magnetized body MK can include ferromagnetic, diamagnetic, and paramagnetic materials. The magnetized body MK can include materials with high and low Curie temperatures. The magnetized body MK can: MPH Motor phases MPH; 64 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown MPHU Motor phase MPHU of the U-phase of the motor; MPHV Motor phase MPHV of the V-phase of the motor; MPHW Motor phase MPHW of the W-phase of the motor; N Magnetic north pole N; NK Nanocrystals NK and / or crystals with paramagnetic centers NV and / or diamond crystals with NV centers NV; NV one or more paramagnetic centers NV. The paramagnetic centers are preferably NV centers in diamond; OF aperture OF; OLF optical longpass filter OLF; OS top surface OS of the sensor element layer SES; P1First pole shoe P1 of the stator; P2 Second pole shoe P2 of the stator; P3 Third pole shoe P3 of the stator; P4 Fourth pole shoe P4 of the stator; P5 Fifth pole shoe P5 of the stator; P6 Sixth pole shoe P6 of the stator; PD Photodetector PD; PM Permanent magnet PM; PMK Position PMK of the magnetized body MK; PS Position sensor PS; PSE Position PSE of the sensor element SE; RMK Magnetic rotor circuit RMK; S Magnetic south pole S; S0 Receive signal S0; S1 Amplifier output signal S1; SdT Prior art; SE Sensor element SE. The sensor element SE preferably comprises one or more crystals with one or more paramagnetic centers NV. Preferably, a sensor element within the meaning of this document comprises one or more diamonds as crystals comprising one or more NV centers as paramagnetic centers NV; SE1 First sensor element SE1; SE2 Second sensor element SE2; SE3 third sensor element SE3; SES sensor element layer SES. TheSensor element layer SES essentially comprises an area sensor element SE; SF optical shortpass filter SF; SFL1 first side surface SFL1 of the sensor element SE; SFL2 second side surface SFL2 of the sensor element SE; SI layer SI with paramagnetic centers NV; SL stator coil windings SL; SL1 first stator coil SL1 of the stator, assigned to the first pole shoe P1; 65 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown SL2 second stator coil SL1 of the stator, assigned to the second pole shoe P2; SL3 third stator coil SL2 of the stator, assigned to the third pole shoe P3; SL4 fourth stator coil SL3 of the stator, assigned to the fourth pole shoe P4; SL5 fifth stator coil SL4 of the stator, assigned to the fifth pole shoe P5; SL6 sixth stator coil SL5 of the stator, assigned to the sixth pole shoe P6; SMK magnetic stator circuit SMK; SMS sensor measurement system SMS; TM carrier material ITM; TM2 second support material II TM2. The second support material II TM2 is preferably a glass wafer GP or a glass plate GP and / or a planar optical waveguide GP; US underside US of the sensor element layer SES; USTR unwanted electromagnetic radiation USTR other wavelength ranges; VDD supply voltage VDD; VMPHU motor phase voltage VMPHU of the U-motor phase MPHU of the motor relative to the reference potential GND; VMPHV motor phase voltage VMPHV of the V-motor phase MPHV of the motor relative to the reference potential GND; VMPHW motor phase voltage VMPHW of the W-motor phase MPHW of the motor relative to the reference potential GND; ZO second surface ZO of the first optical functional element (glass plate GP); List of cited documents DE 10 2019 121 028 B4, DE 10 2020 101 784 B3, DE 10 2020 109 477 A1, DE 10 2020 129 332 A1, DE 10 2020 109 477 A1, DE 10 2021 101 569 A1, DE 10 2021 132 780 A1, DE 10 2021 132 781 A1 DE 10 2021 132 782 A1, DE 10 2021 132 783 A1,DE 10 2021 132 784 A1, DE 10 2021 132 785 A1 DE 10 2021 132 786 A1, DE 10 2021 132 787 A1, DE 10 2021 132 788 A1, DE 10 2021 132 790 A1 DE 10 2021 132 791 A1, DE 10 2021 132 793 A1, DE 10 2021 132 794 A1, DE 10 2022 121 444 A1 DE 10 2023 121 633 A1, DE 10 2023 122 665 A1, DE 10 2024 100 466.5, DE 10 2024 105 739.4 DE 10 2024 108 878.8, DE 20 2020 106 110 U, EP 3 874 343 B1 (DE 50 2019 009 586.6) EP 4 310 458 A1 (DE 10 2020 129 332 A1), WO 2001 073 935 A1 (PCT / US 2001 / 009 553) WO 2020 089 465 A1 (PCT / EP 2019 / 079 992), WO 2020 239 172 A1 (PCT / DE 2020 / 100 430) WO 2020 260 640 A1 (PCT / EP 2020 / 068 110), WO 2021 013 308 A1 (PCT / DE 2020 / 100 648) WO 2021 018 654 A1 (PCT / EP 2020 / 070 485), WO 2021 083 448 A1 (PCT / DE 2020 / 100 827) WO 2021 089 091 A1 (PCT / DE 2020 / 100 953), WO 2021 151 429 A1 (PCT / DE 2021 / 100 069) WO 2024 041 703 A1 (PCT / DE 2023 / 100 614), 66 / 89

Claims

© Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. Claim 1. Position sensor for fluorescence image-based position sensing of at least one magnetized body (MK), wherein the position sensor comprises a plurality of n sensor elements (SE) of one or more sensor element layers (SES), with n being a positive integer greater than 1, and wherein the sensor element layer (SES) may expressly be a continuum of these n sensor elements (SE) within the meaning of this claim such that the sensor elements need not be separated from one another, and wherein the position sensor comprises a magnetized body (MK), and wherein the position sensor comprises a sensor measurement system (SMS), and wherein the sensor measurement system (SMS) comprises one or more photodetector arrays (LSAs), and wherein the position sensor comprises one or more optical transmission paths between the sensor elements (SE) of the one or more sensor element layers (SES) and theone or more photodetector arrays (LSAs) of the sensor measurement system (SMS), wherein the magnetized body (MK) has several differently magnetized regions (MB) on at least one of its surfaces, and / or - one or more regions (MB) that are not magnetized or significantly less magnetized than other regions of that surface on at least one of its surfaces, and / or - one or more separate, locally confined magnetized regions (MB) on at least one of its surfaces, and wherein the magnetized body (MK) has - one mechanical degree of freedom, or - two mechanical degrees of freedom, or - three mechanical degrees of freedom, or - four mechanical degrees of freedom, or - five mechanical degrees of freedom, or - six mechanical degrees of freedom, - wherein the degrees of freedom can be translational or rotational, and / or wherein the position sensor is configured to -to detect or estimate one, two, or three translational displacements of the magnetizable body (MK) relative to a reference position as respective measured values, and / or to detect or estimate one, two, or three rotational rotations of the magnetizable body (MK) relative to a reference position as respective measured values, one, two, or three angles (Euler's angles) as respective measured values, and / or to detect or estimate the position and orientation of at least one, two, or three axes of rotation of the magnetizable body (MK) for one, two, or three corresponding rotations about these one, two, or three angles (Euler's angles) as respective measured values, and / or to detect or estimate one or two curvatures of the surface of the magnetizable body (MK) as respective measured values, wherein the sensor elements (SE) of oneor comprising several sensor element layers (SES) crystals with paramagnetic centers (NV), in particular diamond crystals with NV centers (NV), and 67 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown, wherein the sensor elements of at least one sensor element layer (SES) of the one or more sensor element layers (SES) each form a closed sensor element layer (SES) in which the sensor elements can then be described by detection areas of the one or more photodetector arrays (LSA). The position sensor is configured to irradiate the paramagnetic centers (NV) with pump radiation (LB).and wherein the paramagnetic centers (NV) of the respective sensor elements (SE) of the respective one or more sensor element layers (SES) emit a respective fluorescence radiation (FL) with a respective sensor element-specific intensity (I(FL(t))) of the respective fluorescence radiation (FL) as a result of such irradiation with pump radiation (LB), and wherein the position sensor is configured to detect a respective fluorescence radiation (FL) with a respective sensor element-specific intensity (I(FL(t))) of the fluorescence radiation (FL) from the corresponding detection areas of the sensor element layer and to determine one or more fluorescence images of the magnetized body (MK) and to evaluate fluorescence images of the magnetized body (MK) thus detected, and wherein the position sensor is configured to1. Depending on one or more of the fluorescence images thus acquired, the above-mentioned measured values ​​and / or position data are to be acquired and / or calculated and / or estimated by means of computer- and / or machine-implemented methods and / or algorithms and output to, or used or made available to, a higher-level system.

2. Position sensor according to claim 1, wherein the magnetized body (MK) has one or two curvatures of this at least one surface or of one or more surfaces of the one or more surfaces.

3. Position sensor according to claim 1 or 2, wherein one or more measured values ​​of the respective intensity of the respective fluorescence radiation (FL) of the respective parametric centers of one or more respective sensor elements (SE1, SE2 ...SE3) of one or more sensor element layers (SES) and / or the respective phase shift of the respective temporal intensity profile (I(FL(t))) of the respective intensity of the respective fluorescence radiation (FL1, FL2, FL3, FL) of one or more respective sensor elements (SE1, SE2, SE3) of the one or more sensor element layers (SES) relative to the respective transmit signal of the respective pump radiation source (LED, LED1, LED2, LED3) of the respective sensor element (SE, SE1, SE2, SE3) of the one or more sensor element layers (SES).

4. Position sensor according to one of claims 1 to 3, wherein the position sensor is configured to control and / or regulate the current flow of one or more stator coils (SL1, SL2, SL2, SL) of an electric motor and / or several rotor coils of the electric motor depending on one or more detected fluorescence images.

5. Position sensor according to claim 4,wherein the position sensor is configured to control the current energizing of one or more stator coils (SL1, SL2, SL2, SL) of an electric motor and / or several rotor coils of the electric motor depending on these detected or estimated measured values ​​and / or depending on the respective intensity of the respective fluorescence radiation (FL, FL1, FL2, FL3) of the respective parametric centers of one or more respective sensor elements (SE, SE1, SE2, SE3) and / or the respective 68 / 89 , © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown. To regulate or control the phase shift of the respective temporal intensity profile (I(FL(t))) of the respective intensity of the respective fluorescence radiation (FL1, FL2, FL3, FL) relative to the respective transmitted signal of the respective pump radiation source (LED, LED1, LED2, LED3) of the respective sensor element (SE, SE1, SE2, SE3) with respect to one or more sensor elements (SE, SE1, SE2, SE3).

6. Position sensor according to one of claims 1 to 5, wherein the magnetizable body comprises a hard magnetic material according to DIN IEC 60404-8-1:2003-02. 7.Position sensor according to any one of claims 1 to 6, wherein the magnetizable body comprises a hard magnetic material having a Curie temperature greater than or equal to 310°C and / or greater than or equal to 450°C and / or greater than or equal to 620°C and / or greater than or equal to 640°C and / or greater than or equal to 720°C and / or greater than or equal to 750°C and / or greater than or equal to 800°C and / or greater than or equal to 820°C and / or greater than or equal to 850°C, wherein in particular the Curie temperature of this hard magnetic material is greater than the maximum permissible temperature of the device in which the position sensor is used or is intended to be used, as specified. 8.Position sensor according to claim 7, wherein an optical fiber (OF, OF1, OF2, OF3) and / or an imaging optic (AO) is inserted into the optical transmission path to optically couple the respective sensor elements (SE, SE1, SE2, SE3) of the one or more sensor element layers (SES) with their respective associated photodetectors (PD, PD1, PD2, PD3) of the one or more photodetector arrays (LSAs).

9. Position sensor according to claim 8, wherein the optical fiber (OF, OF1, OF2, OF3), particularly for thermal insulation, is a high-temperature optical fiber that allows operating temperatures at its second end (end of the sensor element SE) above 250°C. 10.Position sensor according to claim 9, wherein the optical waveguide (OW, OW1, OW2, OW3) comprises an optical waveguide made of fused silica (T>200°C allowed) and / or wherein the optical waveguide (OW, OW1, OW2, OW3) comprises an optical waveguide made of sapphire glass (T>200°C allowed) and / or wherein the optical waveguide (OW, OW1, OW2, OW3) comprises an optical waveguide made of aluminum-doped glass (T> several hundred degrees Celsius) and / or wherein the optical waveguide (OW, OW1, OW2, OW3) comprises an optical waveguide made of yttrium aluminum garnet (YAG).

11. Position sensor according to any one of claims 1 to 10, wherein the position sensor is configured to determine or detect a distance of a magnetized body (MK) or of parts of a body (MK) on the one hand from a sensor element layer (SES) on the other hand by means of a computer- and / or machine-implemented method and / or algorithm. 12.Position sensor according to one of claims 1 to 11, wherein the position sensor is configured to generate at least one of the following images or at least one image derived from these images by means of computer- and / or machine-implemented methods and / or algorithms: 69 / 89 . © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown – a fluorescence image of the location-dependent fluorescence intensity of the fluorescence radiation (FL) with the fluorescence wavelength (^ fl ), which the sensor element layer (SES) emits via the paramagnetic centers NV in the sensor element layer (SES) and / or - a fluorescence image of the locally modulated fluorescence radiation (FL) of the sensor element layer (SES) in the wavelength range of the fluorescence wavelength (^ fl) emits and / or - a magnetic flux density magnitude image of the magnetic flux density field passing through the sensor element layer (SES) and / or - an improved fluorescence image and / or - an improved magnetic flux density magnitude image of the magnetic flux density field in the sensor element layer (SES) and / or - a one-, two- or three-dimensional representation of the distribution of the magnetic flux density, in particular in the sensor element layer (SES),and / or a magnetization pattern of the magnetized areas on the surface of the magnetized body (MK) and / or a magnetization pattern of the magnetized areas on the surface of the magnetized body (MK) that is shifted and / or rotated relative to the position of the sensor element layer (SES) and / or a blurred fluorescence image and / or a partial fluorescence image of the aforementioned image types and / or a contrast image and / or a distance image and / or a fluorescence image of the magnetized body (MK) and / or a fluorescence contrast image of one magnetized body (MK) or of several magnetized bodies (MK).

13. Position sensor according to claim 12, wherein one or more images of the above-mentioned image types of claim 12 and / or images of fluorescence patterns are stored in a memory of the device.

14. Position sensor according to claim 12 or 13,wherein a computer system (RSYS) of the device generates one of the above images based on one or more fluorescence images by means of computer- and / or machine-implemented methods, the program code of which is located at least temporarily in one or more memory locations of the device, and / or stores and / or outputs and / or transmits it to another system and / or another computer system.

15. Position sensor according to claim 14,wherein the computer- and / or machine-implemented methods include one or more of the following: - computer- and / or machine-implemented machine learning and artificial intelligence methods and / or - computer- and / or machine-implemented machine learning and artificial intelligence methods and / or - computer- and / or machine-implemented regression methods and / or - computer- and / or machine-implemented classification methods and / or - computer-implemented and / or machine-implemented neural networks (ANNs) and / or 70 / 89 , © Elmos Semiconductor SE, IP Management; Elmo's AZ: 01602DEWO; WIPO AZ: unknown - computer-implemented and / or machine-implemented Convolutional Neural Networks (CNNs) and / or - computer-implemented and / or machine-implemented Recurrent Neural Networks (RNNs) and / or - computer-implemented and / or machine-implemented Generative Adversarial Networks (GANs) and / or - computer-implemented and / or machine-implemented Deep Belief Networks (DBNs) and / or - computer-implemented and / or machine-implemented Autoencoders and / or - computer-implemented and / or machine-implemented Support Vector Machines (SVMs) and / or - computer-implemented and / or machine-implemented Decision Trees and / or computer-implemented and / or machine-implemented Random Forests and / or - computer-implemented and / or machine-implemented 5 Ensemble Methods of the computer-implemented and / or machine-implemented mechanicalLearning and / or computer-implemented and / or machine-implemented clustering algorithms and / or computer-implemented and / or machine-implemented methods of computer-implemented and / or machine-implemented methods of machine-implemented pattern recognition and / or computer-implemented and / or machine-implemented methods of computer-implemented and / or machine-implemented machine learning and / or computer-implemented and / or machine-implemented Long Short-Term Memory Networks (LSTM) and / or computer- and / or machine-implemented neural network models and / or other machine learning (deep learning) methods and / or computer- and / or machine-implemented methods for determining the object displacement of the magnetized body (MK) and / or rotation of the magnetized body (MK) computer- and / or machine-implemented methodsfor pattern recognition and / or computer- and / or machine-implemented methods for feature extraction, also referred to as feature extraction.

16. Position sensor according to any one of claims 1 to 15, wherein the position sensor is configured to determine the position of a rotor (as a magnetized body (MK)) relative to the stator of an electric motor at standstill and / or at rotational speeds of less than 2 rpm and / or less than 0.2 rpm and / or less than 0.02 rpm and / or less than 0.002 rpm and / or less than 0.00002 rpm and / or less than 0.000002 rpm and / or less than 0.000002 rpm and / or less than 10 ‐7 *2^ / min and / or less than 10 ‐8 *2^ / min and / or less than 10 ‐9*2^ / min.

17. Position sensor according to one of claims 1 to 16, wherein the position sensor is configured to detect the rotational speed of a rotor (as a magnetized body (MK)) relative to a sensor element (SE) at rotational speeds less than 2^ / min and / or less than 0.2^ / min and / or less than 0.02^ / min and / or less than 0.002^ / min 71 / 89 © Elmos Semiconductor SE, IP Management; Elmos AZ: 01602DEWO; WIPO AZ: unknown and / or less than 0.0002^ / min and / or less than 0.0002^ / min and / or less than 0.00002^ / min and / or less than 0.000002^ / min and / or less than 10 ‐7 *2^ / min and / or less than 10 ‐8 *2^ / min and / or less than 10 ‐9 *2^ / min to capture. 72 / 89

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