Probabilistic bit element and probabilistic computing device

Abstract

The present invention implements a probabilistic bit element with a simple circuit structure consisting of a threshold switch element and a resistor. The threshold switch element comprises: a lower electrode; a stacked structure provided above the lower electrode; and an upper electrode provided above the stacked structure, wherein the stacked structure includes a silicon oxide layer and an oxygen vacancy supply layer for supplying oxygen vacancies to the silicon oxide layer when an input voltage is applied, and oscillation of an output voltage can be stochastically generated.

Description

Probabilistic bit elements and probabilistic computing devices

[0001] The present invention relates to a probabilistic computing device, and more specifically, to a device using a threshold switch element capable of implementing a probabilistic bit.

[0002] The present invention is a result of the Ministry of Science and ICT's Next Generation Intelligent Semiconductor Technology Development (Device) (Project Unique Number: 1711196855, Project Number: 00258227, Research Project Title: Development of Ultra-High-Efficiency 3D Vertical Computing-in-Memory Integrated Platform Based on CMOS Process Compatible Ferroelectric Transistor, Project Management Agency: National Research Foundation of Korea, Project Execution Agency: Pohang University of Science and Technology, Research Period: 2023.04.01 ~ 2023.12.31) and the Ministry of Science and ICT's PIM Artificial Intelligence Semiconductor Core Technology Development (Device) (R&D) (Project Unique Number: 202526060000, Project Number: RS-2025-09322969, Research Project Title: Development of Ultra-High-Efficiency PIM (eRPIM) Chip Based on Large-Scale Language Model-Specific Multi-bit Resistive Change Memory, Project Management Agency: National Research Foundation of Korea, This is derived from research conducted as part of the Pohang University of Science and Technology Industry-Academic Cooperation Foundation (Research Period: April 1, 2025 - December 31, 2025). The Korean government has no property interest in any aspect of the present invention.

[0003] Recently, due to the rapid development of big data and artificial intelligence technologies, there is a growing demand to solve complex combinatorial optimization problems (COPs), such as the vehicle routing problem or the traveling salesman problem, which are difficult to process efficiently with existing von Neumann computing systems (i.e., classical computing systems that perform deterministic calculations through electronic circuits made of transistors representing binary bits of 0 and 1).

[0004] Here, quantum computing systems, based on the phenomenon of quantum superposition, which allows quantum bits (i.e., qubits) to simultaneously exist in either 0 or 1, demonstrate the potential to solve combinatorial optimization problems (COPs). However, quantum computing systems face the challenge of requiring cryogenic operating environments to accurately detect spin behavior, as well as eliminate unwanted noise.

[0005] Accordingly, probabilistic computing (P-computing) systems are being proposed as an alternative to emulating quantum supremacy even at room temperature. Probabilistic computing systems use probabilistic bits (P-bits), which are based on randomness that cannot predict the states of 0 and 1 and continuously fluctuate over time. The characteristics of probabilistic bits have been proven by utilizing the probability of a magnetic tunnel junction (MTJ). However, in the case of a probabilistic bit configuration based on MJT, an additional transistor is required to adjust the probability of expressing data "1" (=P1) in the range of 0 to 100%, which increases the size of the unit element.

[0006] The purpose of the present invention is to provide a threshold switch element capable of implementing a probability bit, a probability bit element using the same, and a probability computing device.

[0007] A probabilistic bit element according to one embodiment comprises a resistor; and a threshold switch element connected in series with the resistor, wherein the threshold switch element can output an output voltage such that oscillation occurs probabilistically.

[0008] Here, the output voltage may have a first waveform having a value greater than or equal to a first value or a second waveform having a value greater than or equal to the first value, and the first waveform may be a waveform corresponding to a case where oscillation of the threshold switch element occurs, and the second waveform may be a waveform corresponding to a case where oscillation of the threshold switch element does not occur.

[0009] Here, the threshold switch element includes a lower electrode; a laminated structure provided on top of the lower electrode; and an upper electrode provided on top of the laminated structure, wherein the laminated structure may include a silicon oxide layer and an oxygen vacancy supply layer that supplies oxygen vacancy to the silicon oxide layer when an input voltage is applied.

[0010] Here, the oxygen vacancy supply layer can supply oxygen vacancy to the silicon oxide layer so that a probabilistic oscillation of the output voltage occurs when an input voltage is applied.

[0011] Here, the oxygen vacancy supply layer may include a first oxygen vacancy supply layer disposed between the lower electrode and the silicon oxide layer and supplying oxygen vacancy to the silicon oxide layer; and a second oxygen vacancy supply layer disposed between the silicon oxide layer and the upper electrode and supplying oxygen vacancy to the silicon oxide layer.

[0012] Here, the first oxygen vacancy supply layer and the second oxygen vacancy supply layer can each supply oxygen vacancy to the silicon oxide layer so that a probabilistic oscillation of the output voltage occurs when an input voltage is applied.

[0013] Here, control of the probabilistic oscillation of the output voltage can be achieved by adjusting the magnitude of the input voltage.

[0014] Here, the probability that oscillation of the output voltage occurs may be inversely proportional to the size of the input voltage.

[0015] Here, the threshold switch element includes a structure in which a laminated structure in which oxygen vacancy supply layers are formed on the upper and lower portions of a silicon oxide layer, respectively, is repeated between an upper electrode and a lower electrode, and the oxygen vacancy supply layer can supply oxygen vacancy to the silicon oxide layer when an input voltage is applied.

[0016] Here, a probabilistic computing device may be provided in which a plurality of probability bit elements are interconnected.

[0017]

[0018] A threshold switch element according to one embodiment comprises: a lower electrode; a laminated structure provided on top of the lower electrode; and an upper electrode provided on top of the laminated structure, wherein the laminated structure comprises a silicon oxide layer and an oxygen vacancy supply layer that supplies oxygen vacancy to the silicon oxide layer when an input voltage is applied, and can stochastically generate oscillation of an output voltage.

[0019] Here, the oxygen vacancy supply layer can supply oxygen vacancy to the silicon oxide layer so that a probabilistic oscillation of the output voltage occurs when an input voltage is applied.

[0020] Here, the oxygen vacancy supply layer includes a first oxygen vacancy supply layer disposed between the lower electrode and the silicon oxide layer and supplying oxygen vacancy to the silicon oxide layer; and a second oxygen vacancy supply layer disposed between the silicon oxide layer and the upper electrode and supplying oxygen vacancy to the silicon oxide layer, wherein the first oxygen vacancy supply layer and the second oxygen vacancy supply layer can each supply oxygen vacancy to the silicon oxide layer so that a probabilistic oscillation of the output voltage occurs when an input voltage is applied.

[0021] According to the disclosed embodiment, a probability bit element can be implemented with a simple circuit structure comprising a threshold switch element and a resistor. Furthermore, the probability bit can be controlled by adjusting the input voltage of the threshold switch element without a separate additional transistor.

[0022] Meanwhile, the effects that can be obtained from the present invention are not limited to the effects mentioned above, and other effects that are not mentioned can be clearly understood by a person having ordinary skill in the technical field to which the present invention belongs from the description below.

[0023] Figure 1 is a schematic diagram showing the structure and operation of a typical threshold switch element.

[0024] Figure 2 is a diagram showing voltage oscillation operation in a circuit composed of a general threshold switch element and a resistor.

[0025] FIG. 3 is a diagram showing a probabilistic occurrence of a voltage oscillation operation of a threshold switch element in one embodiment of the present invention.

[0026] FIG. 4 is a schematic diagram illustrating a probability bit element according to one embodiment of the present invention.

[0027] FIG. 5 is a diagram showing a TEM (Transmission Electron Microscopy) image and XPS (X-ray Photoelectron Spectroscope) depth profiling of a threshold switch element according to one embodiment of the present invention.

[0028] Fig. 6 is a graph showing the current-voltage characteristics of a threshold switch element according to one embodiment of the present invention.

[0029] Figure 7 is a graph comparing XPS analyses in a case where only a silicon oxide layer is present in a threshold switch element and in a case where a Ti layer is formed on the lower and upper portions of the silicon oxide layer (an example of the present invention).

[0030] FIG. 8 is a schematic diagram illustrating a state in which a charging error occurs in a threshold switch element according to one embodiment of the present invention.

[0031] Figure 9 is a graph showing probabilistic vibration according to an increase in input voltage in one embodiment of the present invention.

[0032] Figure 10 is a graph showing the relationship between the input voltage and the P1 value in one embodiment of the present invention.

[0033] FIG. 11 is a schematic drawing of a threshold switch element according to another embodiment of the present invention.

[0034] FIG. 12 is a schematic diagram showing an array structure of a probability bit element using a threshold switch element according to one embodiment of the present invention.

[0035] FIG. 13 is a schematic diagram illustrating an example of solving an optimization problem using a probability bit element according to one embodiment of the present invention.

[0036] Since the embodiments described in this specification are intended to clearly explain the idea of ​​the present invention to a person having ordinary skill in the art to which the present invention pertains, the present invention is not limited to the embodiments described in this specification, and the scope of the present invention should be interpreted to include modified or altered examples that do not depart from the idea of ​​the present invention.

[0037] The terms used in this specification have been selected from widely used terms, taking into account their functions in the present invention. However, these terms may vary depending on the intentions of those skilled in the art, precedents, or the emergence of new technologies in the technical field to which the present invention pertains. However, if a specific term is defined and used with an arbitrary meaning, the meaning of that term will be described separately. Therefore, the terms used in this specification should be interpreted based on the actual meaning of the term and the overall content of this specification, rather than simply the name of the term.

[0038] The drawings attached to this specification are intended to facilitate explanation of the present invention, and the shapes depicted in the drawings may be exaggerated as necessary to help understand the present invention, and therefore the present invention is not limited by the drawings.

[0039] In cases where it is determined that a specific description of the composition or function of a public notice related to the present invention in this specification may obscure the gist of the present invention, a detailed description thereof will be omitted as necessary.

[0040]

[0041] In the disclosed embodiment, a probability bit element, which is a unit element for implementing a probability computing system, is comprised of a resistor and a threshold switching element connected in series with the resistor. In the disclosed embodiment, a probability bit is implemented through the threshold switching element by causing the voltage osicillation of the threshold switching element to occur probabilistically.

[0042]

[0043] Fig. 1 is a schematic diagram illustrating the structure and operation of a typical threshold switch element. Referring to Fig. 1, the threshold switch element (10) has a structure in which a metal oxide layer is formed between an upper electrode and a lower electrode. The lower electrode is electrically connected to ground.

[0044] Here, a threshold switching phenomenon occurs when the state of the metal oxide layer changes between an insulator and a conductor due to the voltage applied to the upper electrode. That is, when the voltage applied to the upper electrode exceeds the threshold voltage, the current flowing in the metal oxide layer increases nonlinearly, becoming a low resistance state (conductor). When the voltage applied to the upper electrode is removed, the metal oxide layer becomes a high resistance state and returns to its original insulating state, thereby performing a switching operation.

[0045]

[0046] Fig. 2 is a diagram showing a voltage oscillation operation in a circuit composed of a general threshold switch element and a resistor. Referring to Fig. 2, a threshold switch element (10) and a resistor (20) can be connected in series. Through a simple circuit composed of a threshold switch element (10) and a resistor (20), a periodic voltage oscillation operation occurs as charging and discharging are repeated in the parasitic capacitor (Cp) of the threshold switch element (10). For example, when the input voltage (Vin) = 3 V and the resistor (20) = 10 kΩ, the oscillation of the output voltage (Vout) is observed with a pulse width of 100 μs, and the oscillation of the output voltage (Vout) is repeatedly transmitted between the threshold switch element (10) and the resistor (20). Charging occurs when the resistance of the threshold switch element (10) is greater than the resistance of the resistor (20), and discharging occurs when the resistance of the threshold switch element (10) is less than the resistance of the resistor (20).

[0047] In the disclosed embodiment, a circuit comprising a threshold switch element and a resistor is characterized in that a probability bit is implemented through a probability bit element including a threshold switch element and a resistor by probabilistically generating a voltage oscillation operation that occurs periodically.

[0048]

[0049] FIG. 3 is a diagram illustrating a method for generating a voltage oscillation operation of a threshold switch element probabilistically in one embodiment of the present invention. Referring to FIG. 3, in a circuit comprising a threshold switch element and a resistor, a probability bit can be implemented by causing the oscillation of the output voltage (Vout) to occur probabilistically rather than periodically.

[0050] Specifically, the output voltage of the threshold switch element may have the form of a first waveform or a second waveform. The first waveform is a waveform corresponding to a case where oscillation of the threshold switch element occurs. When the output voltage is the first waveform, the threshold switch element can be understood as outputting a value of 1. The second waveform is a waveform corresponding to a case where oscillation of the threshold switch element does not occur. When the output voltage is the second waveform, the threshold switch element can be understood as outputting a value of 0.

[0051] In the case of a conventional threshold switch element, if oscillation does not occur in the second and fifth times as in Fig. 3 in a time period in which oscillation can occur periodically five times, the probability of data "1" (=P1) in the corresponding time period can be expressed as 60%.

[0052] Here, in order to cause the oscillation of the output voltage (Vout) to occur stochastically rather than periodically, the disclosed embodiment introduces a threshold switch element having a novel laminated structure to intentionally induce a charging error in the threshold switch element. That is, the charging error is induced in the threshold switch element having the novel laminated structure to cause oscillation to occur stochastically. In the disclosed embodiment, the terms oscillation, oscillation, and vibration may be used interchangeably with the same meaning.

[0053]

[0054] Fig. 4 is a schematic diagram of a probability bit element according to an embodiment of the present invention, and Fig. 5 is a diagram showing a transmission electron microscopy (TEM) image and an X-ray photoelectron spectroscope (XPS) depth profiling of a threshold switch element according to an embodiment of the present invention. Fig. 5 illustrates an example in which the lower electrode and the upper electrode are formed of niobium (Nb), and the first oxygen vacancy supply layer and the second oxygen vacancy supply layer are formed of titanium (Ti).

[0055] Referring to FIGS. 4 and 5, the probability bit element (100) may be a unit element for implementing probability computing. That is, the probability bit element (100) may be a unit element for implementing a probability bit (P-bit). The probability bit element (100) may include a threshold switch element (110) and a resistor (120).

[0056] The threshold switch element (110) and the resistor (120) may be connected in series. In one embodiment, the resistor (120) may have a resistance value within the resistance range of the threshold switch element (110). An input voltage (Vin) may be applied to the resistor (120). An output voltage (Vout) may be output between the threshold switch element (110) and the resistor (120).

[0057] The threshold switch element (110) may include a lower electrode (111), a laminated structure (113), and an upper electrode (115). Here, the laminated structure (113) may be provided between the lower electrode (111) and the upper electrode (115). That is, the threshold switch element (110) may have a structure in which the lower electrode (111), the laminated structure (113), and the upper electrode (115) are laminated in that order.

[0058] The lower electrode (111) may be connected to the ground. In one embodiment, the lower electrode (111) may be formed by depositing a material such as niobium (Nb) or tungsten (W) on a substrate (not shown), but the material of the lower electrode (111) is not limited thereto. SiO2 or a Si wafer may be used as the substrate (not shown). In one embodiment, the lower electrode (111) may be formed by a DC sputtering method. The lower electrode (111) may be formed to a thickness of 20 nm to 50 nm, but is not limited thereto.

[0059] A laminated structure (113) may be provided on top of the lower electrode (111). The laminated structure (113) may include a first oxygen vacancy supply layer (113a), a silicon oxide layer (113b), and a second oxygen vacancy supply layer (113c).

[0060] The first oxygen vacancy supply layer (113a) may be provided on the upper portion of the lower electrode (111). The first oxygen vacancy supply layer (113a) may serve to supply oxygen vacancies to the silicon oxide layer (113b). In one embodiment, the first oxygen vacancy supply layer (113a) may be made of Ti (titanium), but is not limited thereto, and may be made of various materials capable of supplying oxygen vacancies to the silicon oxide layer (113b). In one embodiment, the first oxygen vacancy supply layer (113a) may be formed to a thickness of 10 nm or less. Preferably, the first oxygen vacancy supply layer (113a) may be formed to a thickness of 0.1 nm to 7 nm.

[0061] A silicon oxide layer (113b) may be provided on top of the first oxygen vacancy supply layer (113a). The silicon oxide layer (113b) may be formed through a radio frequency (RF) sputtering process for depositing silicon oxide, but is not limited thereto. The silicon oxide layer (113b) forms a current path through which current flows when an input voltage is applied. In one embodiment, the silicon oxide layer (113b) may be formed to a thickness of 3 nm to 6 nm, but is not limited thereto, and may be formed to various thicknesses that can secure threshold switching characteristics.

[0062] The second oxygen vacancy supply layer (113c) may be provided on the upper portion of the silicon oxide layer (113b). The second oxygen vacancy supply layer (113c) may serve to supply oxygen vacancies to the silicon oxide layer (113b). In one embodiment, the second oxygen vacancy supply layer (113c) may be made of, but is not limited to, Ti (titanium) and may be made of various materials capable of supplying oxygen vacancies to the silicon oxide layer (113b). In one embodiment, the second oxygen vacancy supply layer (113c) may be formed to a thickness of 10 nm or less. Preferably, the second oxygen vacancy supply layer (113c) may be formed to a thickness of 0.1 nm to 7 nm.

[0063] The upper electrode (115) may be provided on the upper portion of the second oxygen vacancy supply layer (113c). The upper electrode (115) may be formed by depositing a material such as niobium (Nb) or tungsten (W), but the material of the upper electrode (115) is not limited thereto. In one embodiment, the upper electrode (115) may be formed by a DC sputtering method. The upper electrode (111) may be formed to a thickness of 20 nm to 50 nm, but is not limited thereto.

[0064]

[0065] Fig. 6 is a graph showing the current-voltage characteristics of a threshold switch element according to one embodiment of the present invention. Fig. 6 schematically shows a state in which oxygen vacancies (Vo) are supplied from the first oxygen vacancy supply layer (113a) and the second oxygen vacancy supply layer (113c) to the silicon oxide layer (113b).

[0066] Referring to Fig. 6, it can be seen that the threshold switch element (110) has a layered structure (113) and has threshold switching characteristics. In addition, the threshold switch element (110) additionally supplies oxygen vacancies (Vo) to the silicon oxide layer (113b) from the first oxygen vacancy supply layer (113a) and the second oxygen vacancy supply layer (113c), which are formed on the lower and upper portions of the silicon oxide layer (113b), respectively. At the interface between the first oxygen vacancy supply layer (113a) and the second oxygen vacancy supply layer (113c) and the silicon oxide layer (113b), the oxygen vacancies (Vo) are supplied to the silicon oxide layer (113b) through a chemical reaction.

[0067] As more oxygen vacancies are supplied to the silicon oxide layer (113b) due to the first oxygen vacancy supply layer (113a) and the second oxygen vacancy supply layer (113c), a change in the threshold switching voltage (e.g., threshold voltage (Vth) or hold voltage (Vhold), etc.) occurs, and this change causes a charging error at a given input voltage, resulting in stochastic oscillations.

[0068]

[0069] Fig. 7 is a graph comparing XPS analyses of a threshold switch element having only a silicon oxide layer and a case in which a Ti layer is formed on the lower and upper portions of the silicon oxide layer (an example of the present invention). Referring to Fig. 7, it can be seen that the peak intensity of Vo (= O2-) increases in the case in which a Ti layer is formed on the lower and upper portions of the silicon oxide layer compared to the case in which only a silicon oxide layer is present.

[0070] Here, the increased oxygen vacancies due to the first oxygen vacancy supply layer (113a) and the second oxygen vacancy supply layer (113c) randomly form the thickness of the current path in the silicon oxide layer (113b), so that the current path is not disconnected even at the hold voltage where the current path was previously disconnected, so that charging does not occur and a charging error occurs.

[0071]

[0072] FIG. 8 is a schematic diagram illustrating a state in which a charging error occurs in a threshold switch element according to an embodiment of the present invention. Referring to FIG. 8, when the applied input voltage (Vin) is lower than the hold voltage (Vhold), oxygen vacancies (Vo) are distributed and charging occurs during the nth cycle ((a) of FIG. 8), but in the n+1th cycle, the current path is formed thicker, so that even if the input voltage (Vin) is lower than the hold voltage (Vhold), the current path remains connected, causing a charging error.

[0073] Here, it is described that the oxygen vacancy supply layer is formed on the lower and upper portions of the silicon oxide layer (113b), respectively, but it is not limited thereto and may be formed only on the upper portion of the silicon oxide layer (113b).

[0074] Meanwhile, even if a probabilistic oscillation occurs due to a charging error in the threshold switch element (110), the probabilistic oscillation must be controllable in order to implement a probabilistic bit. In the disclosed embodiment, the control of the probabilistic oscillation (oscillation) is achieved by adjusting the size of the input voltage (Vin). That is, in the disclosed embodiment, the probability of data "1" (=P1) (i.e., the probability of voltage oscillation occurring) in a specific time interval can be controlled through the input voltage (Vin).

[0075] Specifically, the P1 value (the probability value at which voltage oscillation occurs) in a specific time interval is inversely proportional to the magnitude of the input voltage (Vin). That is, as the input voltage (Vin) increases, the P1 value decreases, and as the input voltage (Vin) decreases, the P1 value increases.

[0076]

[0077] Fig. 9 is a graph illustrating probabilistic oscillations according to an increase in input voltage in one embodiment of the present invention. Referring to Fig. 9, when the input voltage (Vin) is 3.8 V, it can be seen that P1 = 0.92, indicating that charging errors do not occur significantly. However, when the input voltage (Vin) increases to 4.2 V, P1 decreases to 0.53, and when the input voltage (Vin) becomes 4.6 V, it can be seen that P1 decreases further to 0.14.

[0078]

[0079] Fig. 10 is a graph showing the relationship between the input voltage and the P1 value in one embodiment of the present invention. In Fig. 10, the P1 value was observed while increasing the input voltage (Vin) from 3.6 V to 5 V in increments of 0.1 V. As a result, it can be confirmed that the P1 value decreases as the input voltage (Vin) increases, showing an inversely proportional relationship. At this time, it can be seen that the P1 value exhibits a sigmoid distribution, which is essential for probability computing, in the input voltage (Vin) range from 3.6 V to 5 V.

[0080] Therefore, the probability of voltage oscillation occurring can be controlled through the input voltage (Vin), thereby enabling the probability bit element (100) to be used as a unit element for implementing a probability bit.

[0081] According to the disclosed embodiment, a probability bit element can be implemented with a simple circuit structure consisting of a threshold switch element (110) and a resistor (120). In addition, the probability bit can be controlled by adjusting the input voltage of the threshold switch element without a separate additional transistor.

[0082]

[0083] Fig. 11 is a schematic diagram of a threshold switch element according to another embodiment of the present invention. Referring to Fig. 11, a threshold switch element (110) may be provided by repeatedly forming a laminated structure (113) between an upper electrode (115) and a lower electrode (111) in which an oxygen vacancy supply layer (e.g., a Ti layer) is formed on the upper and lower portions of a silicon oxide layer, respectively. In this case, threshold switching characteristics for probabilistic oscillation can be obtained in the silicon oxide layer of each laminated structure (113), and thus, the integration level can be increased when implementing a probabilistic computing system using a probabilistic bit element (100).

[0084]

[0085] Fig. 12 is a schematic diagram illustrating an array structure of a probability bit element using a threshold switch element according to one embodiment of the present invention. Referring to Fig. 12, a first electrode (121) may be provided at a predetermined interval in a first direction, and a second electrode (123) may be provided at a predetermined interval in a second direction perpendicular to the first direction from above the first electrode (121). In addition, a laminated structure (113) of a threshold switch element (110) may be provided at a predetermined interval between the first electrode (121) and the second electrode (123).

[0086] In addition, a third electrode (125) may be provided at a predetermined interval in the first direction on top of the second electrode (123). In addition, a stacked structure (113) of a threshold switch element (110) may be provided at a predetermined interval between the second electrode (123) and the third electrode (125). In addition, a fourth electrode (127) may be provided at a predetermined interval in the second direction on top of the third electrode (125). In addition, a stacked structure (113) of a threshold switch element (110) may be provided at a predetermined interval between the third electrode (125) and the fourth electrode (127). By implementing an array structure of a probability bit element in this form, the integration degree of the probability bit element can be increased, and thus, a structure of an interconnection type required for probability computing can be implemented.

[0087]

[0088] Fig. 13 is a schematic diagram illustrating an example of solving an optimization problem using a probability bit element according to an embodiment of the present invention. Fig. 13 exemplarily illustrates a state of optimizing a vehicle path problem using a probability bit element (100). That is, the vehicle path problem can be optimized through probability computing using the sigmoid probability distribution obtained through the probability bit element (100). The optimization problem using the probability bit element (100) is not limited to this, and the probability bit element (100) can of course be used for various other optimization problems.

[0089]

[0090] Although the embodiments described above have been described by way of limited examples and drawings, those skilled in the art will appreciate that various modifications and variations can be made based on the above teachings. For example, appropriate results can still be achieved even if the described techniques are performed in a different order than described, and / or components of the described systems, structures, devices, circuits, etc. are combined or combined in a different manner than described, or are replaced or substituted with other components or equivalents.

[0091] Therefore, other implementations, other embodiments, and equivalents to the claims also fall within the scope of the claims described below.

Claims

1. Resistance; and It comprises a threshold switch element connected in series with the above resistor, The above threshold switch element outputs an output voltage so that oscillation occurs probabilistically. Probability bit element.

2. In paragraph 1, The above output voltage has a form of a first waveform having a value greater than or equal to the first value or a second waveform having a value greater than or equal to the first value, The above first waveform is a waveform corresponding to the case where oscillation of the threshold switch element occurs, The above second waveform is a waveform corresponding to the case where oscillation of the threshold switch element does not occur. Probability bit element.

3. In paragraph 1, The above threshold switch element, lower electrode; A laminated structure provided on top of the lower electrode; and Including an upper electrode provided on the upper part of the above laminated structure, The above laminated structure includes a silicon oxide layer and an oxygen vacancy supply layer that supplies oxygen vacancy to the silicon oxide layer when an input voltage is applied. Probability bit element.

4. In paragraph 3, The above oxygen public supply layer is, When an input voltage is applied, oxygen vacancies are supplied to the silicon oxide layer so that a probabilistic oscillation of the output voltage occurs. Probability bit element.

5. In paragraph 3, The above oxygen public supply layer is, A first oxygen vacancy supply layer disposed between the lower electrode and the silicon oxide layer and supplying oxygen vacancy to the silicon oxide layer; and A second oxygen vacancy supply layer is disposed between the silicon oxide layer and the upper electrode and supplies oxygen vacancy to the silicon oxide layer. Probability bit element.

6. In paragraph 5, The first oxygen public supply layer and the second oxygen public supply layer are, When an input voltage is applied, oxygen vacancies are supplied to each of the silicon oxide layers so that a probabilistic oscillation of the output voltage occurs. Probability bit element.

7. In paragraph 6, Control of the probabilistic oscillation of the above output voltage is achieved by adjusting the magnitude of the above input voltage. Probability bit element.

8. In paragraph 7, The probability that the above output voltage oscillation will occur is inversely proportional to the magnitude of the above input voltage. Probability bit element.

9. In paragraph 1, The above threshold switch element, A laminated structure in which oxygen vacancy supply layers are formed on the upper and lower portions of the silicon oxide layer, respectively, includes a structure in which the laminated structure is repeated between the upper electrode and the lower electrode. The above oxygen vacancy supply layer supplies oxygen vacancy to the silicon oxide layer when an input voltage is applied. Probability bit element.

10. A probability computing device in which a plurality of probability bit elements described in any one of claims 1 to 9 are interconnected.

11. Lower electrode; A laminated structure provided on top of the lower electrode; and Including an upper electrode provided on the upper part of the above laminated structure, The above laminated structure, A silicon oxide layer and an oxygen vacancy supply layer that supplies oxygen vacancy to the silicon oxide layer when an input voltage is applied, and stochastically generates oscillation of an output voltage. Threshold switch element.

12. In paragraph 11, The above oxygen public supply layer is, When an input voltage is applied, oxygen vacancies are supplied to the silicon oxide layer so that a probabilistic oscillation of the output voltage occurs. Threshold switch element.

13. In paragraph 11, The above oxygen public supply layer is, A first oxygen vacancy supply layer disposed between the lower electrode and the silicon oxide layer and supplying oxygen vacancy to the silicon oxide layer; and A second oxygen vacancy supply layer is disposed between the silicon oxide layer and the upper electrode and supplies oxygen vacancy to the silicon oxide layer, The first oxygen public supply layer and the second oxygen public supply layer are, When an input voltage is applied, oxygen vacancies are supplied to each of the silicon oxide layers so that a probabilistic oscillation of the output voltage occurs. Threshold switch element.

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