Silicon wafer processing device and system
By setting multiple wiring areas and grooves with different angles on the main roller, the wiring spacing and angle of the cutting lines can be adjusted, solving the problems of wire merging and breakage during silicon wafer cutting, and achieving efficient cutting effect and low-cost production.
Patent Information
- Application Number
- PCT/CN2025/116171
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-09-20
- Filing Date
- 2025-08-21
- Publication Date
- 2026-03-19
AI Technical Summary
During the silicon wafer cutting process, the cutting lines are prone to tangling and breaking, leading to increased production costs and decreased wafer yield.
By setting multiple wiring zones on the main roller, adjusting the wiring spacing and angle of the cutting lines, and setting grooves with different included angles in the second zone, combined with grooves with different sidewall inclination angles, the torsion direction of the cutting lines is adjusted to ensure that the cutting lines generate a component force to balance the lateral force during the cutting process, thereby reducing wire merging and breakage.
It effectively reduces the breakage rate of the cutting wire, improves the cutting yield of silicon wafers, reduces production costs, and enhances cutting efficiency and the service life of the cutting wire.
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Figure CN2025116171_19032026_PF_FP_ABST
Abstract
Description
Silicon wafer processing apparatus and system
[0001] Cross-reference to related applications
[0002] The present application claims priority to the Chinese Patent Application No. 202422265763.0, filed on September 14, 2024, entitled “Silicon wafer processing apparatus and system”, and the Chinese Patent Application No. 202422305924.4, filed on September 20, 2024, entitled “Main roller and slicing machine”. TECHNICAL FIELD
[0003] The present application relates to the field of photovoltaic technology, and in particular to a silicon wafer processing apparatus and system. BACKGROUND
[0004] With the development of the photovoltaic industry, reducing the cost per kilowatt-hour becomes critical. To further reduce processing costs, silicon wafer thinning is one of the important ways to reduce the cost of silicon wafers.
[0005] Slicing is a key link in the production of silicon wafers. As silicon wafers become thinner, the distance between adjacent cutting lines becomes smaller. During the cutting process, the cutting force gradually increases, which can easily cause the cutting lines to appear and break, thereby increasing production costs and leading to a decrease in slicing yield. SUMMARY
[0006] To solve the above technical problems, the present application aims to provide a silicon wafer processing apparatus and system by changing the groove type of the main roller and the upper wire groove, as well as the arrangement of the cutting line, to reduce the loss of cutting yield caused by the merging and breaking of the cutting line.
[0007] In a first aspect of the present application, a silicon wafer processing apparatus is provided, comprising:
[0008] A plurality of main rollers arranged in sequence and a cutting line wound around the outer periphery of the main rollers, the cutting line forming a wire mesh between the main rollers, the wire mesh comprising a plurality of wiring areas arranged in sequence along the axial direction of the main rollers, and the main rollers being provided with a plurality of wire grooves for winding the cutting line.
[0009] It should be noted that the main roller in the present application refers to the roller involved in cutting. During cutting, a plurality of main rollers are arranged in parallel to cut the silicon rod to be cut. The rollers in the slicing device other than the main rollers are used for wire arrangement, which are collectively referred to as auxiliary rollers or driven rollers.
[0010] In a further aspect of the application, the plurality of wiring regions comprises a first region and a second region, and the wiring pitch of the cutting line in the second region is greater than the wiring pitch of the cutting line in the first region. It can be understood that when there are multiple rollers in the cutting, the main roller for cutting has a first region and a second region.
[0011] In a further aspect of the application, in the second region, the cutting line forms a first angle with the axial direction of the main roller on the first side of the wire net and forms a second angle with the axial direction of the main roller on the second side of the wire net, and the difference between the first angle and the second angle is less than or equal to 45°.
[0012] By setting the difference between the angles of the cutting line on the two sides of the second region of the wire net to be less than 45°, the wear degree of the second region of the cutting line can be increased, and the phenomenon of increased wire bow when the cutting line enters the first region of the wire net can be ensured.
[0013] In a further aspect of the application, the wire net has opposite first and second sides, and on the first side, the cutting lines at the junctions of the first and second regions are parallel to each other; and on the second side, the cutting line at the position close to the first region of the second region forms an angle of 45° to 90° with the axial direction of the main roller.
[0014] Since the cutting lines on the first side of the wire net are parallel to each other, and the cutting line of the second region forms an angle with the axial direction of the main roller, the angles between the cutting lines on the two sides of the wire net and the axial line of the main roller are different, so that under the action of the cutting tension, the cutting line can generate a component force along the axial direction of the main roller, which can balance the lateral force generated during cutting, thereby reducing the occurrence of doubling and broken wires of the cutting line in the first region.
[0015] In a further aspect of the application, the wire net has opposite first and second sides, and on the first side, the cutting lines at the junctions of the first and second regions are parallel to each other, and the cutting line of the second region is closer to the first side than the cutting line of the first region.
[0016] Since the cutting line of the second region is closer to the wire net, when the silicon rod is cut, the second region is in contact with the silicon rod in advance, which alleviates the phenomenon of increased wire bow caused by the cutting line first contacting the first region.
[0017] In a further aspect of the application, the plurality of wire grooves formed on the main roller are equidistant first wire grooves, and the first wire grooves are arranged in the first region and the second region; the cutting line is arranged at intervals of X first wire grooves in the first region and at intervals of Y first wire grooves in the second region, and Y is greater than X.
[0018] It can be understood that the first line grooves are arranged on the main roller at equal intervals. When the main roller is prepared, the existing main roller processing method does not need to be changed. Only the number of line grooves in the first region and the second region is adjusted when the wire is arranged, so that different wire arrangement intervals in the first region and the second region are realized.
[0019] In a further aspect of the present application, the plurality of line grooves includes first line grooves and second line grooves, the first line grooves are arranged at equal intervals in the first region, and the second line grooves are arranged in the second region; wherein the interval between adjacent second line grooves is greater than the interval between first line grooves.
[0020] The first line grooves and the second line grooves arranged on the main roller at different intervals can make it unnecessary to arrange the wire at intervals of a certain number of grooves when arranging the wire. In combination with the need for wire arrangement, reasonable wire arrangement between adjacent line grooves can realize adjustment of the wire bow, and reduce abnormalities such as wire doubling and wire breaking.
[0021] In a further aspect of the present application, the arrangement interval of the cutting wire in the second region is at least partially the same.
[0022] The silicon rod entering the first region is pre-ground in the second region. By setting the arrangement interval of the wire as a gradually changing interval, for example, in a gradually increasing / decreasing manner, only the cutting wire can stably cut the silicon rod when entering the first region, and the wire breaking rate is reduced.
[0023] In a further aspect of the present application, the length ratio of the second region and the first region in the axial direction of the main roller is between 1:6 and 1:2.
[0024] In a further aspect of the present application, the wire net further includes a third region, the third region is located on the side of the first region away from the second region along the axial direction of the main roller, and the third region and the second region are symmetrically arranged relative to the first region.
[0025] In a further aspect of the present application, the plurality of line grooves includes a plurality of line groove groups arranged at equal intervals along the axial direction of the main roller, the line groove group includes adjacent third line grooves and fourth line grooves; the third line grooves and the fourth line grooves respectively have two side walls arranged oppositely and having different inclination angles, the inclination angle of the side wall refers to the angle between the side wall and the direction perpendicular to the axial direction of the main roller; in adjacent third line grooves and fourth line grooves, the inclination angle of one side wall and the adjacent side wall of the other line groove is similar, and the inclination directions of the adjacent two side walls are opposite.
[0026] In a further aspect of the application, the third groove has two side walls with a first angle and a second angle, the first angle is greater than or equal to 40 degrees and less than or equal to 45 degrees, and the second angle is greater than or equal to 0 degrees and less than or equal to 13 degrees; the fourth groove has two side walls with a third angle and a fourth angle, the third angle is greater than or equal to 40 degrees and less than or equal to 45 degrees, and the fourth angle is greater than or equal to 0 degrees and less than or equal to 13 degrees.
[0027] In a further aspect of the application, the main roller comprises a cutting section and a pre-cutting section, the pre-cutting section is arranged at at least one end of the main roller, and the third groove and the fourth groove are arranged on the pre-cutting section.
[0028] In a further aspect of the application, the main roller comprises a main roller body composed of the cutting section and at least one pre-cutting section; the ratio of the length of the pre-cutting section along the axial direction of the main roller to the length of the main roller body along the axial direction of the main roller is greater than or equal to 0.025 and less than or equal to 0.1.
[0029] In a further aspect of the application, along the axial direction of the main roller, the cutting section has a plurality of intermediate grooves, and the distance between adjacent third grooves and fourth grooves in the pre-cutting section is greater than or equal to the distance between adjacent intermediate grooves in the cutting section.
[0030] In a further aspect of the application, adjacent third grooves and fourth grooves are symmetrically arranged with respect to the center lines of the two grooves.
[0031] In a further aspect of the application, along the axial direction of the main roller, the groove width of the third groove is less than or equal to the groove width of the intermediate groove.
[0032] In a further aspect of the application, the third groove and the fourth groove each have a groove bottom connecting the two side walls, and the groove bottom has an arc shape.
[0033] In a further aspect of the application, the ratio of the depth of the groove bottom to the depth of the third groove in the third groove is greater than or equal to 0.15 and less than or equal to 0.2; and the ratio of the depth of the groove bottom to the depth of the fourth groove in the fourth groove is greater than or equal to 0.15 and less than or equal to 0.2.
[0034] In a further aspect of the application, in adjacent third grooves and fourth grooves, the difference between the inclination angle of one side wall and the inclination angle of the adjacent side wall of the other groove is less than or equal to 5 degrees.
[0035] In a second aspect of the present application, a silicon wafer processing system is provided, comprising the silicon wafer processing device and a clamping device for clamping a silicon rod to be processed to move along a first side to a second side of the wire mesh of the silicon wafer processing device.
[0036] In a further aspect of the present application, the silicon rod to be processed comprises a processing zone corresponding to the first region and a wear zone corresponding to the second region, the wear zone is arranged to be closer to the wire mesh than the processing zone in the moving direction of the silicon rod to be processed; or the diameter of the main roller in the second region is greater than that in the first region, so that the cutting line in the second region is closer to the first side than the cutting line in the first region; so that when the clamping device clamps the silicon rod to be processed to move to the silicon wafer processing device, the wear zone contacts the wire mesh earlier than the processing zone.
[0037] In summary, the silicon wafer processing device and system provided by the present application have at least the following beneficial effects:
[0038] 1) The wiring spacing of the cutting line in the second region of the silicon wafer processing device is greater than that in the first region, and in the second region, the cutting line is arranged at a first angle with the axial direction of the main roller on the first side (the feeding side of the silicon rod to be processed) and at a second angle with the axial direction of the main roller on the second side. The cutting line on the second side can generate a component force in the axial direction under the cutting tension, which can balance the lateral force generated in the first region during cutting, thereby reducing the increase in wire bow caused by the concentration of lateral force and the limitation of cutting force. Especially for the cutting line at the head of the first region, the problem of line merging and breaking with the adjacent cutting line can be effectively avoided.
[0039] 2) The second region is arranged on the main roller, which allows the second region and the silicon rod to be cut to be in contact in advance in the initial stage of slicing (when the diamond cutting edge is wrapped by the nickel layer), so as to alleviate the phenomenon of increase in wire bow caused by the new cutting line entering the first region.
[0040] 3) By arranging the third wire groove and the fourth wire groove with different groove types on the main roller, the twisting direction of the cutting wire can be adjusted, so that the twisting direction of the cutting wire in the third wire groove is opposite to that in the fourth wire groove, and the twisting direction of the cutting wire changes constantly when it travels on multiple third wire grooves and fourth wire grooves, so that the torque of the cutting wire is small, the cutting ability of the cutting wire can be enhanced, the wire breakage rate of the cutting wire is reduced, the torque increase caused by the continuous one-side rotation of the cutting wire is avoided, and the cutting force weakening, wire bowing and wire breakage caused by the large torque of the cutting wire are avoided. In addition, by reducing the wire breakage rate of the cutting wire, the cost of the cutting wire can be reduced, and the cutting yield of the silicon wafer can be improved. In addition, by adjusting the twisting direction of the cutting wire at multiple third wire grooves and fourth wire grooves, the torque increase caused by the continuous one-side rotation of the cutting wire and the deformation of different degrees can be avoided, and the cutting efficiency can be avoided. BRIEF DESCRIPTION OF DRAWINGS
[0041] In order to more clearly illustrate the technical solutions in the specific embodiments or prior art of the present application, the drawings needed in the description of the specific embodiments or prior art will be briefly introduced. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.
[0042] Fig. 1 is a top view of a silicon wafer processing device provided by the present application;
[0043] Fig. 2 is a top view of a silicon wafer processing device provided by the present application, in another form of the main roller;
[0044] Fig. 3 is a schematic diagram of the overall structure of a main roller provided by the present application;
[0045] Fig. 4 is a schematic diagram of the structure of a main roller cooperating with a cutting wire provided by the present application;
[0046] Fig. 5 is a schematic diagram of part of another main roller provided by the present application;
[0047] Fig. 6 is a schematic diagram of another silicon wafer processing device provided by the present application;
[0048] Fig. 7 is a schematic diagram of another silicon wafer processing device provided by the present application;
[0049] Fig. 8 is a schematic diagram of the shaft side of a silicon wafer processing system provided by the present application.
[0050] Wherein, the reference signs are explained as follows: 100, silicon wafer processing device; 10, main roller; 101, pre-cutting section; 102, cutting section; 11, first wire slot; 12, second wire slot; 13, intermediate wire slot; 14, third wire slot; 15, fourth wire slot; 16, side wall; 17, slot bottom; 18, main roller body; 20, cutting wire; 21, first section; 22, second section; 23, third section; 24, fourth section; 200, silicon wafer processing system; 201, clamping device; 3, conventional main roller; a1, first region; a2, second region; a3, third region. DETAILED DESCRIPTION
[0051] In the description of the present application, if the features limited with "first", "second" appear only for the purpose of description, it cannot be understood as indicating or implying relative importance or implying the number of the indicated technical features. The features limited with "first", "second" can explicitly or implicitly include at least one of the features limited. If the description of "multiple" appears, it generally means at least two, for example, two, three, etc., unless there is an explicit specific limitation.
[0052] Referring to FIGS. 1-2, the present application first provides a silicon wafer processing device 100, which includes a plurality of main rollers 10 arranged in sequence and a cutting wire 20 wound around the outer periphery of the main rollers 10. The cutting wire 20 forms a wire net between the main rollers 10, and the wire net includes a plurality of wiring regions arranged in sequence along the axial direction of the main rollers 10. The main rollers 10 are provided with a plurality of wire slots for winding the cutting wire 20. It should be noted that these wire slots on the main rollers 10 can be made by, for example, laser processing technology, machining technology, etc.
[0053] Further, the plurality of wiring regions include a first region a1 and a second region a2, and the wiring spacing of the cutting wire 20 in the second region a2 is greater than the wiring spacing of the cutting wire 20 in the first region a1.
[0054] It should be noted that the wiring spacing of the cutting wire 20 in the first region a1 and the second region a2 is different. The wiring spacing of the present application refers to the average wiring spacing in the first region a1 and the second region a2. By setting different wiring spacings, it can be ensured that when entering the first region a1, the lateral force of the cutting wire 20 is reduced, so that the force distribution on the cutting wire 20 is uniform, thereby solving the problem of wire breakage of the cutting wire 20.
[0055] In the embodiment of the present application, the second region a2 is limited to be located in the axial direction of the main roller 10. In the movement process of the to-be-processed silicon rod participating in cutting, the to-be-processed silicon rod first contacts the cutting wire 20 of the wire net compared with the first region a1, and is guided to the second region a2 and gradually conveyed to the first region a1 along with the rotation of the main roller 10 to participate in the actual cutting work.
[0056] In the embodiments of the present application, the cutting line 20 is arranged around the outer periphery of the plurality of main rollers 10, and in the second region a2, the cutting line 20 forms a first angle with the axial direction of the main roller 10 on the first side of the wire net and forms a second angle with the axial direction of the main roller 10 on the second side of the wire net.
[0057] In the embodiments of the present application, the difference between the first angle and the second angle is less than or equal to 45°. For example, it can be 40°, 35°, 30°, 25°, 20°, etc., and the present application does not limit it as long as it is within the range of less than 45°.
[0058] It should be noted that the "wire spacing" refers to the average interval distance of adjacent cutting lines 20 in the axial direction of the main roller 10. In the present application, the first side refers to the side of the main roller 10 that first contacts the wire net during processing of the silicon rod, which can be defined as the side where the cutting line 20 first contacts the silicon rod. The second side is the side opposite the first side; for example, when the silicon rod to be processed is fed from top to bottom, the first side is the upper side of the main roller 10, and the second side is the lower side of the main roller 10.
[0059] It should be noted that the main roller 10 in the present application refers to the roller that participates in cutting, and other rollers used for arranging wires are collectively referred to as auxiliary rollers or driven rollers. It can be understood that when there are multiple rollers in the cutting process, the rollers used for cutting have the first region a1 and the second region a2.
[0060] It can be understood that the second region a2 serves as a transition region for the cutting line from the wire feeding device to the main cutting region to ensure the continuity of the cutting line 20 during cutting. In addition, since the cutting line 20 is arranged to form a first angle with the axial direction of the main roller 10 on one side and a second angle on the other side.
[0061] Under the action of the cutting tension, the cutting line 20 can generate a component force in the axial direction of the main roller 10, which can balance the lateral force generated during cutting, especially in the scenario where new cutting lines participate in cutting, to reduce the occurrence of splicing, wire breakage, etc. of the cutting line in the first region a1.
[0062] In an optional embodiment, the wire net has opposite first and second sides, and on the first side, the cutting lines at the junction of the first region and the second region a2 are parallel to each other; on the second side, the cutting line 20 at the junction of the second region and the first region a1 forms an angle of 45° to 90° with the axial direction of the main roller 10.
[0063] It should be noted that on the first side of the wire net, the cutting lines of the first region a1 adjacent to the second region a2 are arranged parallel to each other, and on the second side of the wire net, the cutting lines of the first region a1 adjacent to the second region a2 are arranged at an angle with the main roller 10, which can balance the lateral force to some extent during cutting, thereby reducing the problems of broken wires and joined wires.
[0064] In an alternative embodiment, the wire net has opposite first and second sides, and on the first side, the cutting lines of the first region a1 adjacent to the second region a2 are arranged parallel to each other, and the cutting lines of the second region a2 are closer to the first side than the cutting lines of the first region a1.
[0065] It can be understood that under the action of the cutting tension, the cutting lines 20 can generate a component force in the axial direction of the main roller 10, which can balance the lateral force generated during cutting, especially in the processing scenario where the newly cut cutting line participates in cutting, to reduce the occurrence of broken wires and joined wires of the cutting lines in the first region a1.
[0066] In this way, the silicon rod to be processed first contacts the cutting line 20 of the second region a2 to pre-grind the cutting line 20, so that when the cutting line 20 contacts the silicon rod to be processed in the first region a1, the wire bow will not increase.
[0067] In an alternative embodiment, the main roller 10 is provided with a plurality of first wire grooves 11 arranged at equal intervals; the cutting lines 20 are arranged at intervals of X first wire grooves 11 in the first region a1 and at intervals of Y first wire grooves 11 in the second region a2, and Y is greater than X.
[0068] For example, assuming that the distance between two first wire grooves 11 is d, when X = 1 and Y = 3, that is, the cutting lines 20 are arranged every 1 first wire groove 11 in the first region a1, and the distance between adjacent cutting lines 20 in this region is 2d; while in the second region a2, the cutting lines 20 are arranged every 3 wire grooves, that is, the first groove, the fourth groove, the seventh groove, and so on are arranged in the second region a2, and the distance between adjacent cutting lines 20 is 4d.
[0069] In this application, X can be equal to 0, that is, the cutting lines 20 are arranged every first wire groove 11 in the first region a1.
[0070] Preferably, Y is set to be greater than or equal to 2, that is, in the second region a2, the distance between adjacent cutting lines 20 is greater than or equal to 3d.
[0071] It can be understood that the first line grooves 11 are arranged on the main roller 10 at equal intervals. When the main roller is prepared, the existing main roller processing method does not need to be changed. Only the number of line grooves in the first area and the second area is adjusted when the wire is arranged, so that different wire arrangement intervals in the first area and the second area are realized. The arrangement intervals in the second area can be the same or different, and the number of interval first line grooves of the cutting wire in the second area is not necessarily equal, so that the arrangement intervals in the second area are not equal or equal. The present application does not limit this.
[0072] It should be noted that the interval between the first line grooves 11 in the present application refers to the average groove distance of the first line grooves on the main roller. For the purpose of splicing the rod, the first line grooves with an interval of 0 or not 0 can be arranged in the first area, which is also within the protection scope of the present application.
[0073] In another optional embodiment as shown in FIG. 2, the plurality of line grooves includes the first line grooves 11 and the second line grooves 12. The main roller 10 is provided with a plurality of first line grooves 11 arranged at equal intervals in the first area a1 and a plurality of second line grooves 12 in the second area a2. The interval between adjacent second line grooves 12 is greater than the interval between the first line grooves 11.
[0074] It can be understood that the line groove layout of the first area a1 and the second area a2 adopts a non-equidistant design, specifically, the line groove interval of the second area a2 is greater than that of the first area a1. For example, assuming that the interval between the adjacent two first line grooves 11 in the first area a1 is 200um, and the interval between the adjacent two second line grooves 12 in the second area a2 is 700um. Through the above arrangement, the winding operation process can be simplified, that is, the operator does not need to accurately count how many line grooves are passed in the second area a2 to layout the cutting wire, but can directly layout the cutting wire 20 in each second line groove 12, so as to improve the wire layout efficiency and accuracy, and improve the fault tolerance to avoid wire layout errors.
[0075] It should be noted that the interval between the first line grooves 11 in the present application refers to the average groove distance of the first line grooves 11 on the main roller 10, and the interval of the second line grooves 12 refers to the average groove distance of the second line grooves 12 in the second area a2. In addition, the groove type of the first line grooves 11 can be the same as or different from that of the second line grooves 12.
[0076] It can be understood that for those skilled in the art, the groove distance of the second line groove 12 can be flexibly set. When the wire bow is adjusted, the wire can be arranged at intervals of a plurality of second line grooves 12 in the second area a2, so that the arrangement intervals in the second area a2 are equal or not equal. The present application does not limit this.
[0077] In another alternative embodiment, the present application sets the wiring spacing of the second region a2 in a manner of gradually increasing / decreasing along the axis of the main roller 10, so that the adjustment of the wire bow gradually changes, ensuring that the cutting wire 20 does not fluctuate when entering the first region a1, and smoothly realizes the cutting in the first region a1.
[0078] For those skilled in the art, in view of the need for adjustment, the wiring spacing of the second region a2 can be adjusted to gradually decrease along the axis of the main roller 10, thereby ensuring the stability of the wire net in the first region a1.
[0079] Further, the number of second wire grooves 12 is preferably 3 to 5.
[0080] When the number of second wire grooves 12 is too small (i.e. less than 3), the contact area with the to-be-cut silicon rod will be correspondingly reduced, thereby failing to meet the requirement of pre-wearing the new wire in the second region a2; while more second wire grooves 12 (i.e. more than 5) can provide more pre-contact between the cutting wire and the to-be-cut silicon rod; but it will also increase the friction between the new cutting wire and the to-be-cut silicon rod, causing the nickel layer to be excessively worn when it enters the first region a1, thereby reducing the service life of the cutting wire. The number of 3 to 5 wire grooves in the present application can provide sufficient cutting wear for the cutting wire 20, and avoid excessive friction; which helps to prolong the service life of the cutting wire 20 and improve the cutting quality.
[0081] Further, the spacing between adjacent first wire grooves 11 is d1, and the spacing between adjacent second wire grooves 12 is d2; d2 is 3 to 7 times d1, and d1 is in the range of 130um-160um.
[0082] The range of d1 can make the first region a1 suitable for the production of thin silicon wafers, and by adjusting the specific values of d1 and d2 (within the given range), different cutting requirements can be flexibly adapted. For example, when the thickness specification requirement of the cutting silicon wafer is small, a smaller d1 value can be selected in the range of 130um-160um.
[0083] In the case of a constant center distance of the main roller 10, the range of d2 can change the angle between the second side and the axial direction of the cutting wire 20; specifically, the larger d2 is, the smaller the included angle between the second side and the axial direction of the cutting wire 20 is, and the greater the corresponding transverse cutting force is.
[0084] Further, in the second region a2, the angle A between the second side and the axial direction of the cutting wire 20 is 45 degrees to 90 degrees.
[0085] Specifically, F1 is the cutting tension of the cutting line 20 on the first side of the main roller 10, and F2 is the cutting tension of the cutting line 20 on the second side of the main roller 10; since the cutting line 20 is the same line, F1=F2=F2, the cutting tension is specifically set according to the silicon wafer processing device 100, and the lateral component F3 of F2 in the axial direction of the main roller 10 is calculated as follows: F3=F2*cos A
[0086] It can be seen that when d2 is larger, the angle A between the cutting line 20 on the second side and the axial direction is smaller, and vice versa, F3 is larger, so that the cutting line 20 in the first area a1 is subjected to a larger force moving in the transverse direction. Therefore, according to the size of the cutting force required to balance the first area a1, a suitable d2 can be adaptively selected.
[0087] At the junction of the first area a1 and the second area a2, the cutting line 20 in the second area a2 adjacent to the first area a1 is divided into a first segment 21 (perpendicular to the axial direction) on the first side, a second segment 22 (angled to the axial direction) connected to the first segment 21 on the second side, a third segment 23 (perpendicular to the axial direction) connected to the second segment 22 on the first side in the first area a1, and a fourth segment 24 (perpendicular to the axial direction) adjacent to the third segment 23 on the first side in the first area a1.
[0088] The first segment 21 and the second segment 22 are connected, and the second segment 22 is angled so that under the action of the cutting tension, the second segment 22 can cause the third segment 23 connected thereto to be subjected to a component force F3 in the direction of the first segment 21; when the first area a1 participates in cutting, the lateral force acting on the third segment 23 can be balanced by the component force F3 generated by the second segment 22, thereby avoiding problems such as the third segment 23 and the fourth segment 24 being connected and broken.
[0089] The distance between the second wire groove 12 and the adjacent first wire groove 11 is equal to the distance between the second wire groove 12 and the adjacent second wire groove 12; or the distance between the second wire groove 12 and the adjacent first wire groove 11 is greater than the distance between the second wire groove 12 and the adjacent second wire groove 12.
[0090] When the distance between the second wire groove and the adjacent first wire groove, and the distance between the adjacent second wire grooves 12 are kept equal, the lateral force in the second area a2 can be more uniform. Conversely, if the length of the main roller 10 is relatively long and the first area a1 occupies a small proportion in the axial direction as a whole, the distance between the second wire groove 12 and the adjacent first wire groove 11 is preferably greater than the distance between the second wire groove 12 and the adjacent second wire groove 12; so as to ensure that the component force generated by the cutting line 20 in the second area a2 can sufficiently balance the lateral force of the first area a1.
[0091] In a specific scheme, when the center distance D between the two parallel main rollers arranged with the cutting line 20 is set to be between 300 mm and 660 mm, the spacing d3 of the first line groove 11 of the adjacent second line groove 12 is set to be between 5 mm and 10 mm.
[0092] Further, the length ratio of the second region a2 and the first region a1 in the axial direction is set to be between 1:6 and 1:2.
[0093] Referring to FIG. 1, each main roller 10 further includes a third region a3 arranged in the axial direction on the wire outlet side of the first region a1, and the third region a3 and the second region a2 are symmetrically arranged relative to the first region a1.
[0094] The third region a3 helps to achieve a balance of stress in the cutting process. When the cutting line 20 moves on the main roller, it has a corresponding guiding range whether it enters the cutting region (through the second region a2) or leaves the cutting region (through the third region a3). And the center-symmetric design makes the whole main roller 10 more stable in structure. In the high-speed or high-precision cutting process, it can better maintain the straightness and precision of the cutting line, and reduce the cutting quality problems caused by equipment vibration or instability.
[0095] The existing main roller has several line grooves which are all V-shaped grooves. However, when the cutting line runs at high speed in the line groove of the main roller, it will rotate on one side to increase the internal stress and torque of the cutting line. The increase of the cutting line torque will cause the cutting line to deform to different degrees, so that the cutting line is prone to breakage and nickel layer damage. After the nickel layer is damaged, it will cause the diamond to fall off, which is easy to cause the cutting force to weaken, the wire bow to be large, and the wire to be broken.
[0096] In view of the above problems, referring to FIGS. 3 to 5, the embodiment of the present application discloses a main roller 10, and the plurality of line grooves on the main roller 10 include a plurality of line groove groups arranged in sequence in the axial direction, and each line groove group includes adjacent third line grooves 14 and fourth line grooves 15; the third line groove 14 and the fourth line groove 15 respectively have two side walls 16 which are oppositely arranged and have different inclination angles; the inclination angle of the side wall 16 refers to the angle between the side wall 16 and the direction perpendicular to the axial direction of the main roller 10; in the adjacent third line groove 14 and the fourth line groove 15, the inclination angle of one side wall 16 is close to the inclination angle of the adjacent side wall 16 of the other line groove, and the inclination directions of the adjacent two side walls are opposite.
[0097] The third wire slot 14 and the fourth wire slot 15 are arranged in sequence along the axial direction of the main roller 10, that is, the third wire slot 14 and the fourth wire slot 15 are spaced and arranged alternately along the axial direction of the main roller 10, the third wire slot 14 is adjacent to the fourth wire slot 15, and the fourth wire slot 15 is adjacent to the third wire slot 14. The direction perpendicular to the axial direction of the main roller 10 can be referred to as the direction shown by the A dashed line in FIG. 5. It should be noted that the similar inclination angles can mean that the difference between the inclination angles is less than or equal to a set angle, and the set angle can be set according to actual needs, for example, can be set to 5 degrees.
[0098] The third wire slot 14 can be a V-shaped slot, and the fourth wire slot 15 can be a V-shaped slot. The inclination direction of the side wall 16 with the largest inclination angle in the third wire slot 14 is opposite to that in the fourth wire slot 15. The main roller 10 has a third side and a fourth side arranged opposite along the axial direction thereof, the inclination direction of the side wall 16 with the largest inclination angle in the third wire slot 14 is toward the third side of the main roller 10, and the inclination direction of the side wall 16 with the largest inclination angle in the fourth wire slot 15 is toward the fourth side of the main roller 10. The inclination angle of the side wall 16 with the largest inclination angle in the third wire slot 14 can be referred to as α1 shown in FIG. 5, and the inclination angle of the side wall 16 with the largest inclination angle in the fourth wire slot 15 can be referred to as α2 shown in FIG. 5. The cutting line 20 is twisted in the direction of the side wall 16 with the largest inclination angle in both the third wire slot 14 and the fourth wire slot 15.
[0099] In an embodiment, the side wall 16 with the smallest inclination angle in the third wire slot 14 and the fourth wire slot 15 is parallel to the direction perpendicular to the axial direction of the main roller 10, that is, the inclination angle of the side wall 16 with the smallest inclination angle in the third wire slot 14 and the fourth wire slot 15 relative to the direction perpendicular to the axial direction of the main roller 10 is 0. In another embodiment, the inclination angle of the side wall 16 with the smallest inclination angle in the third wire slot 14 and the fourth wire slot 15 is not 0, and the inclination direction of the side wall 16 with the smallest inclination angle in the third wire slot 14 and the fourth wire slot 15 is opposite. The inclination direction of the side wall 16 with the smallest inclination angle in the third wire slot 14 is toward the fourth side of the main roller 10, and the inclination direction of the side wall 16 with the smallest inclination angle in the fourth wire slot 15 is toward the third side of the main roller 10.
[0100] The thinning of the cutting line of the silicon wafer is one of the important ways to reduce the cost of the silicon wafer, and the thinner the diameter of the cutting line is, the more the problem of line breakage is, especially the line breakage on the inlet and outlet sides. In the embodiment of the application, by arranging the third line groove 14 and the fourth line groove 15 with different groove types on the main roller 10, the twisting direction of the cutting line 20 can be adjusted, so that the twisting direction of the cutting line 20 in the third line groove 14 is opposite to the twisting direction of the cutting line 20 in the fourth line groove 15. When the cutting line 20 travels on the plurality of third line grooves 14 and fourth line grooves 15, the twisting direction of the cutting line 20 changes constantly, so that the torque of the cutting line 20 is small, the cutting ability of the cutting line is enhanced, the line breakage rate of the cutting line is reduced, the torque is increased due to the continuous unilateral rotation of the cutting line, and the cutting force is weakened due to the large torque of the cutting line, and the line bow is large.
[0101] The high line breakage rate of the cutting line will increase the cost of the cutting line and reduce the cutting yield of the silicon wafer. In the embodiment of the application, the line breakage rate of the cutting line is reduced, the cost of the cutting line is reduced, and the cutting yield of the silicon wafer is improved. The large torque of the cutting line will cause the cutting line to deform to different degrees, thereby reducing the cutting efficiency. In the embodiment of the application, by adjusting the twisting direction of the cutting line 20 at the plurality of third line grooves 14 and fourth line grooves 15, the torque is increased due to the continuous unilateral rotation of the cutting line, and the cutting efficiency is affected.
[0102] In an optional embodiment of the application, the inclination angles of the two side walls 16 in the third line groove 14 are a first angle and a second angle, respectively, the first angle is greater than or equal to 40 degrees and less than or equal to 45 degrees, and the second angle is greater than or equal to 0 degrees and less than or equal to 13 degrees; the inclination angles of the two side walls 16 in the fourth line groove 15 are a third angle and a fourth angle, respectively, the third angle is greater than or equal to 40 degrees and less than or equal to 45 degrees, and the fourth angle is greater than or equal to 0 degrees and less than or equal to 13 degrees.
[0103] The first angle is greater than the second angle, the first angle is the angle of the side wall 16 with the largest inclination angle in the third wire slot 14, and the first angle can refer to a1 shown in FIG. 5. The first angle can be 40 degrees, 41 degrees, 42 degrees, 43 degrees, 44 degrees, 45 degrees, etc. The second angle can be 0 degrees, 5 degrees, 8 degrees, 10 degrees, 11 degrees, 13 degrees, etc. The third angle is greater than the fourth angle, the third angle is the angle of the side wall 16 with the largest inclination angle in the fourth wire slot 15, and the third angle can refer to a2 shown in FIG. 5. The third angle can be 40 degrees, 41 degrees, 42 degrees, 43 degrees, 44 degrees, 45 degrees, etc. The fourth angle can be 0 degrees, 5 degrees, 8 degrees, 10 degrees, 11 degrees, 13 degrees, etc. In the embodiment of the present application, the difference between the first angle and the second angle in the third wire slot 14 and the fourth wire slot 15 is large, which is beneficial to the torsion of the cutting wire 20 in the third wire slot 14 and the fourth wire slot 15 towards the side wall 16 with the largest inclination angle.
[0104] In an optional embodiment of the present application, referring to FIGS. 3 and 4, the main roller 10 includes a cutting section 102 and a pre-cutting section 101, the pre-cutting section 101 is arranged at least at one end of the main roller 10, and the third wire slot 14 and the fourth wire slot 15 are arranged on the pre-cutting section 101.
[0105] Preferably, both ends of the main roller 10 are the pre-cutting section 101, the middle of the main roller 10 is the cutting section 102, and the pre-cutting section 101 and the cutting section 102 are coaxially arranged. The main roller 10 can be applied to a two-roller assembly. The two pre-cutting sections 101 at both ends of the main roller 10 can be symmetrical or asymmetrical relative to the center line of the length of the main roller 10. The torsion direction of the cutting wire 20 changes constantly when the cutting wire 20 travels on the pre-cutting section 101, so that the torsion torque of the cutting wire 20 is small when the cutting wire 20 enters the cutting section 102, and the torsion stability of the cutting wire 20 at the cutting section 102 is optimized.
[0106] The main roller 10 is rotatable, and the rotation of the main roller 10 drives the cutting wire net formed by the cutting wire 20 to travel. The main roller 10 has oppositely arranged wire entry and wire exit sides, and the cutting of the silicon rod by the cutting wire net formed by the cutting wire 20 can adopt a bidirectional reciprocating cutting mode. The bidirectional reciprocating cutting process includes a wire entry phase and a wire return phase. In the wire entry phase, the main roller 10 rotates forward, and the cutting wire 20 travels from the wire entry side to the cutting section 102. In the wire return phase, the main roller 10 reverses, and the cutting wire 20 returns from the wire exit side to the cutting section 102. The main roller 10 can periodically rotate forward and reverse to drive the cutting wire to reciprocate. Therefore, any end of the main roller 10 will serve as the entry end of the cutting wire 20 at different time periods. Through the arrangement of the two pre-cutting sections 101 at both ends of the main roller 10, the torsion direction of the cutting wire 20 can be adjusted during the reciprocating cutting process of the cutting wire 20, so as to avoid the continuous increase of the cutting wire torque during the reciprocating cutting process of the cutting wire 20.
[0107] In an optional embodiment of the present application, the main roller 10 comprises a main roller body 18 composed of the cutting segment 102 and at least one pre-cutting segment 101; the ratio of the length of the pre-cutting segment 101 along the axial direction of the main roller 10 to the length of the main roller body 18 along the axial direction of the main roller 10 is greater than or equal to 0.025 and less than or equal to 0.1.
[0108] When the main roller 10 comprises two pre-cutting segments 101, the lengths of the two pre-cutting segments 101 along the axial direction of the main roller 10 can be L2 and L3 shown in FIG. 3, respectively, and the lengths L2 and L3 of the two pre-cutting segments 101 along the axial direction of the main roller 10 can be equal or not equal. The length of the main roller body 18 along the axial direction of the main roller 10 can be L shown in FIG. 1. The ratio of the length L2 or L3 of the pre-cutting segment 101 along the axial direction of the main roller 10 to the length L of the main roller body 18 along the axial direction of the main roller 10 can be 0.025, 0.03, 0.035, 0.04, 0.05, 0.1, etc., that is, the length L2 or L3 of the pre-cutting segment 101 along the axial direction of the main roller 10 can be 2.5%, 3%, 3.5%, 4%, 5%, 10%, etc. of the length L of the main roller body 18 along the axial direction of the main roller 10. In the present embodiment, when the ratio of the length of the pre-cutting segment 101 along the axial direction of the main roller 10 to the length of the main roller body 18 along the axial direction of the main roller 10 is within the above range, the adjustment effect on the torsion of the cutting line 20 can be ensured, and meanwhile, the length of the cutting segment 102 is avoided from being affected too much.
[0109] The ratio of the length of the cutting segment 102 along the axial direction of the main roller 10 to the length of the main roller body 18 along the axial direction of the main roller 10 is greater than or equal to 0.8 and less than or equal to 0.95. The length of the cutting segment 102 along the axial direction of the main roller 10 can be L1 shown in FIG. 1, and the length L1 of the cutting segment 102 along the axial direction of the main roller 10 is greater than or equal to the length of the silicon rod to be cut. When slicing is performed, the axial direction of the silicon rod is parallel to the axial direction of the cutting segment 102, and the length L1 of the cutting segment 102 along the axial direction of the main roller 10 is greater than or equal to the length of the silicon rod to be cut, so that the silicon rod can be completely located within the axial direction range of the cutting segment 102. The ratio of the length L1 of the cutting segment 102 along the axial direction of the main roller 10 to the length L of the main roller body 18 along the axial direction of the main roller 10 can be 0.8, 0.85, 0.9, 0.92, 0.94, 0.95, etc., that is, the length L1 of the cutting segment 102 along the axial direction of the main roller 10 can be 80%, 85%, 90%, 92%, 94%, 95%, etc. of the length L of the main roller body 18 along the axial direction of the main roller 10.
[0110] In an optional embodiment of the present application, the cutting segment 102 has a plurality of intermediate line grooves 13, and the distance between the third line groove 14 and the fourth line groove 15 adjacent to each other in the pre-cutting segment 101 is greater than or equal to the distance between two intermediate line grooves 13 adjacent to each other in the cutting segment 102.
[0111] The intermediate grooves 13 can be V-shaped grooves with arc-shaped groove bottoms, and the two opposite side wall surfaces of the V-shaped grooves have the same inclination angle. Along the axial direction of the main roller 10, the spacing between the adjacent third grooves 14 and fourth grooves 15 in the pre-cutting section 101 can be referred to as D1 shown in FIG. 4, and the spacing between the adjacent two intermediate grooves 13 in the cutting section 102 can be referred to as D2 shown in FIG. 4. When the spacing D1 between the adjacent third grooves 14 and fourth grooves 15 in the pre-cutting section 101 is greater than the spacing D2 between the adjacent two intermediate grooves 13 in the cutting section 102 along the axial direction of the main roller 10, the pre-cutting section 101 and the cutting section 102 can be clearly distinguished. The spacing D1 between the adjacent third grooves 14 and fourth grooves 15 in the pre-cutting section 101 along the axial direction of the main roller 10 can be set according to actual needs, for example, set to 20-50 um.
[0112] The main roller 10 includes a roller core and a wear-resistant coating arranged on the surface of the roller core, and the intermediate grooves 13, the third grooves 14 and the fourth grooves 15 are all arranged on the wear-resistant coating. The material of the roller core can be metal, and the wear-resistant coating can be made of a material with wear-resistant properties, for example, the material of the wear-resistant coating can be polyurethane, polytetrafluoroethylene, etc. When the intermediate grooves 13, the third grooves 14 and the fourth grooves 15 are machined by a tool, the intermediate grooves 13, the third grooves 14 and the fourth grooves 15 are machined on the circumferential surface of the wear-resistant coating, that is, the material of the intermediate grooves 13, the third grooves 14 and the fourth grooves 15 is consistent with the material of the wear-resistant coating. Through the arrangement of the wear-resistant coating, the wear-resistant performance of the main roller 10 can be improved, and the service life of the main roller 10 is prolonged.
[0113] In an optional embodiment of the present application, the adjacent third grooves 14 and fourth grooves 15 are symmetrically arranged relative to the center lines thereof, so that the adjustment effect on the twisting direction is consistent whether the cutting wire 20 enters from the third groove 14 to the fourth groove 15 or enters from the fourth groove 15 to the third groove 14.
[0114] In an optional embodiment of the present application, along the axial direction of the main roller 10, the groove width of the third groove 14 is less than or equal to the groove width of the intermediate groove 13. The third groove 14 has a slot, and the groove width of the third groove 14 specifically refers to the distance between the two side walls 16 of the third groove 14 close to one end of the slot. The groove width of the third groove 14 is greater than the diameter of the cutting wire 20, and the groove width of the third groove 14 can be set according to actual needs, which is not limited in the present embodiment. The intermediate groove 13 has a slot, and the groove width of the intermediate groove 13 specifically refers to the distance between the two side wall surfaces of the intermediate groove 13 close to one end of the slot. The groove width of the intermediate groove 13 is preferably greater than the groove width of the third groove 14. The groove width of the intermediate groove 13 can be set according to actual needs, which is not limited in the present embodiment.
[0115] In an optional embodiment of the present application, the third wire groove 14 and the fourth wire groove 15 each have a groove bottom 17 connecting the two side walls 16, and the groove bottom 17 is arc-shaped. The groove bottom 17 is configured to contact the cutting wire 20. The radius of the arc-shaped groove bottom 17 can be set according to actual requirements, for example, 0.03mm-0.05mm.
[0116] In an optional embodiment of the present application, the ratio of the depth of the groove bottom 17 in the third wire groove 14 to the depth of the third wire groove 14 is greater than or equal to 0.15 and less than or equal to 0.2; and the ratio of the depth of the groove bottom 17 in the fourth wire groove 15 to the depth of the fourth wire groove 15 is greater than or equal to 0.15 and less than or equal to 0.2. The depth of the groove bottom 17 in the third wire groove 14 refers to the distance between the end of the groove bottom 17 close to the groove opening and the end of the groove bottom 17 away from the groove opening in the direction perpendicular to the axial direction of the main roller 10. The depth of the third wire groove 14 refers to the distance between the end of the third wire groove 14 close to the groove opening and the end of the third wire groove 14 away from the groove opening in the direction perpendicular to the axial direction of the main roller 10. The ratio of the depth of the groove bottom 17 in the third wire groove 14 to the depth of the third wire groove 14 can be 0.15, 0.17, 0.18, 0.19, 0.2, etc. The ratio of the depth of the groove bottom 17 in the fourth wire groove 15 to the depth of the fourth wire groove 15 can be 0.15, 0.16, 0.17, 0.18, 0.2, etc. When the ratio of the depth of the groove bottom 17 to the depth of the wire groove as a whole is within the above range, the depth of the groove bottom 17 is small, so as to ensure that the side wall 16 has sufficient depth, thereby ensuring the adjustment effect of the torsion of the cutting wire 20.
[0117] The wire groove on the existing main roller is generally V-shaped without an arc-shaped groove bottom. During the process of cutting a silicon wafer, the cutting wire falls and partially contacts the inner wall of the wire groove, and the contact area between the cutting wire and the inner wall of the wire groove is small, so that the support of the inner wall of the wire groove on the cutting wire is also small. In the present embodiment, the third wire groove 14 and the fourth wire groove 15 each have an arc-shaped groove bottom 17 connecting the two side walls 16. After the cutting wire 20 falls into the third wire groove 14 and the fourth wire groove 15 during the cutting of a silicon wafer, the cutting wire 20 can form a surface contact with the groove bottom 17 and the side wall 16 in the third wire groove 14 and the fourth wire groove 15, which can increase the contact area between the cutting wire 20 and the third wire groove 14 and the fourth wire groove 15, so that the third wire groove 14 and the fourth wire groove 15 can better support the cutting wire 20, which is beneficial to improve the cutting stability of the cutting wire 20.
[0118] In an optional embodiment of the present application, referring to FIG. 5, the third wire groove 14 and the fourth wire groove 15 are arranged in the entire region of the main roller 10 participating in the winding.
[0119] In this embodiment, referring to FIG. 7, the main roller 10 is used in cooperation with the conventional main roller 3, and the conventional main roller 3 is provided with a plurality of identical line grooves, which can be V-shaped line grooves with arc-shaped groove bottoms. The main roller 10 can be applied to a three-roller assembly, which can include one main roller 10 and two conventional main rollers 3 arranged in parallel, and the main roller 10 is located below the two conventional main rollers 3. The twisting direction of the cutting wire 20 changes constantly when the cutting wire 20 travels on the main roller 10, which can optimize the twisting stability of the cutting wire 20 in the normal cutting area on the conventional main roller 3. In this embodiment, the area participating in cutting in the three-roller assembly is the area between the two conventional main rollers 3, and when the entire area participating in winding on the main roller 10 is provided with the third line groove 14 and the fourth line groove 15, the twisting direction of the cutting wire during the entire travel process can be adjusted, and meanwhile, the length of the normal cutting area between the two conventional main rollers 3 is not affected.
[0120] In an optional embodiment of the present application, the number of the third line grooves 14 is equal to the number of the fourth line grooves 15, so as to more effectively reduce the wire breakage rate of the cutting wire.
[0121] The processing mode of the third line groove 14 and the fourth line groove 15 can be processing by a forming tool, and the shape of the forming tool is matched with the shape of the third line groove 14 and the fourth line groove 15. The processing mode of the third line groove 14 and the fourth line groove 15 can also be contour processing by a tool.
[0122] Referring to FIG. 6, the two ends of the main roller 10 are pre-cutting sections 101, and the middle of the main roller 10 is a cutting section 102. The two main rollers 10 are arranged in parallel, and the cutting wire 20 is wound between the two main rollers 10 to form a plurality of parallel cutting wire nets. The corresponding area of the cutting section 102 of the two main rollers 10 constitutes a cutting area for slicing the silicon rod.
[0123] In an optional embodiment, the pre-cutting sections 101 at the two ends of the main roller 10 correspond to the positions of the second area a2 and the third area a3 respectively, and the cutting section 102 in the middle of the main roller 10 corresponds to the position of the first area a1.
[0124] Referring to FIG. 7, the silicon wafer processing device 100 can include one main roller 10 and two conventional main rollers 3, and the entire area participating in winding on the main roller 10 is provided with the third line groove 14 and the fourth line groove 15, and the spacing between the adjacent third line groove 14 and the fourth line groove 15 on the main roller 10 is equal to the spacing between the adjacent two line grooves on the conventional main roller 3.
[0125] Obviously, the silicon wafer processing device 100 has the beneficial effects of the above-mentioned main roller 10, which will not be described here again.
[0126] Further, those skilled in the art should understand that if other elements involved in each product of the silicon wafer processing device 100 provided by the embodiments of the present application are combined, replaced, transformed, etc. by fusing, simple changing, mutual transforming, etc., such as moving the positions of each component, or detachable design, or integrally setting the products formed thereby, such as integrated design, and the combined components can form a device / apparatus / system with a specific function, then the device / apparatus / system is also within the protection scope of the present application.
[0127] As shown in FIG. 8, the present application also provides a silicon wafer processing system 200, which comprises the silicon wafer processing device 100 and a clamping device 201 as described above, and the clamping device 201 is used to clamp the silicon rod to be processed to move along the direction from the first side to the second side of the wire net relative to the silicon wafer processing device 100.
[0128] In further embodiments of the present application, the silicon rod to be processed comprises a processing area corresponding to the first area a1, and a wear area corresponding to the second area a2, and the wear area is arranged to be closer to the wire net than the processing area in the moving direction of the silicon rod to be processed, so that the wear area can pre-contact the cutting line 20 of the second area a2 when the clamping device 201 feeds the silicon rod to be processed to the silicon wafer processing device.
[0129] In the conventional silicon wafer processing process, when the new cutting line first contacts the silicon rod in the first area a1, the wire bow effect is easily generated due to the limited cutting force, which can cause a large wire bow to the cutting line in the first area a1. In the present application, by arranging the wear area on the silicon rod to be processed and protruding it relative to the processing area in the feeding direction, the cutting line 20 can first contact the wear area when the silicon rod to be processed is fed. In this way, the initial wear of the cutting line 20 and the wire bow effect mainly act on the wear area, thereby reducing the wire bow of the new cutting line in the first area a1, and further reducing the wire bow difference in the cutting process, and finally reducing the size of the lateral force. The quality, efficiency and stability of the thin wafer processing are improved, and the production cost is further reduced.
[0130] In the deformation example based on the present application, the diameter of the main roller 10 in the second area a2 is greater than that in the first area a1, and the cutting line 20 in the second area a2 is closer to the first side of the wire net than the cutting line 20 in the first area a1, so that the wear area can pre-contact the cutting line 20 of the second area a2 when the clamping device feeds the silicon rod to be processed to the silicon wafer processing device.
[0131] Similarly, since the diameter of the second area a2 is larger, the cutting line 20 thereon first contacts the wire mesh of the second area during the processing of the silicon rod, which enables the wear area of the silicon rod to preliminarily contact the cutting line 20 of the first side when the clamping device 201 feeds the silicon rod to be processed to the silicon wafer processing device, ensuring that the wear area can effectively preliminarily wear the cutting line, thereby further reducing the influence of the cutting line bow on the processing area (especially the first area a1), and specific descriptions are not repeated.
[0132] The above-described specific embodiments further illustrate the purposes, technical solutions and beneficial effects of the present application. It should be understood that the above-described specific embodiments are merely for the purpose of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.
Claims
1. A silicon wafer processing apparatus, characterized by comprising: The application relates to a cutting device comprising: a plurality of main rollers arranged in sequence and a cutting wire wound around the outer periphery of the main rollers, the cutting wire forming a wire net between the main rollers, the wire net comprising a plurality of wiring areas arranged in sequence along the axial direction of the main rollers, and the main rollers being provided with a plurality of wire grooves for winding the cutting wire.
2. The silicon wafer processing apparatus of claim 1, wherein The plurality of wiring areas comprises a first area and a second area, and the wiring spacing of the cutting wire in the second area is greater than that in the first area.
3. The silicon wafer processing apparatus of claim 2, wherein In the second area, the cutting wire forms a first angle with the axial direction of the main roller on the first side of the wire net and forms a second angle with the axial direction of the main roller on the second side of the wire net, and the difference between the first angle and the second angle is less than or equal to 45 degrees.
4. The apparatus for processing a silicon slice according to claim 2, wherein The wire net has opposite first and second sides, on the first side, the cutting wires at the abutting positions of the first and second areas are parallel to each other, and on the second side, the cutting wire near the first area of the second area forms an angle of 45 degrees to 90 degrees with the axial direction of the main roller.
5. The apparatus for processing a silicon slice according to claim 2, wherein The wire net has opposite first and second sides, on the first side, the cutting wires at the abutting positions of the first and second areas are parallel to each other, and the cutting wire of the second area is closer to the first side than the cutting wire of the first area.
6. The silicon wafer processing device according to claim 2, wherein: the plurality of wire grooves formed on the main roller are equidistant first wire grooves, and the first wire grooves are arranged in the first and second areas; the cutting wire is arranged at intervals of X first wire grooves in the first area and Y first wire grooves in the second area, and Y is greater than X.
7. The silicon wafer processing device according to claim 2, wherein: the plurality of wire grooves comprise first wire grooves and second wire grooves, the first wire grooves are equidistant and arranged in the first area, and the second wire grooves are arranged in the second area; the spacing between adjacent second wire grooves is greater than the spacing between the first wire grooves.
8. The silicon wafer processing apparatus according to claim 6 or 7, wherein In the second area, the wiring spacing of the cutting wire is at least partially the same.
9. The apparatus for processing a silicon slice according to claim 2, wherein The length ratio of the second area to the first area in the axial direction of the main roller is between 1:6 and 1:
2.
10. The apparatus for processing a silicon slice according to claim 2, wherein The wire net further comprises a third area, which is located on the side away from the second area of the first area along the axial direction of the main roller, and the third area and the second area are symmetrically arranged relative to the first area.
11. The apparatus for processing a silicon slice according to claim 1, wherein The plurality of wire grooves comprise a plurality of wire groove groups arranged in sequence along the axial direction of the main roller, and each wire groove group comprises adjacent third wire grooves and fourth wire grooves; the third wire groove and the fourth wire groove each have two side walls arranged oppositely and having different inclination angles, and the inclination angle of the side wall refers to the angle between the side wall and the direction perpendicular to the axial direction of the main roller; in adjacent third wire grooves and fourth wire grooves, the inclination angle of one side wall is similar to that of the adjacent side wall of the other wire groove, and the inclination directions of the adjacent two side walls are opposite.
12. The silicon wafer processing apparatus of claim 11 wherein, The inclination angles of the two side walls in the third wire slot are respectively a first angle and a second angle, the first angle is greater than or equal to 40 degrees and less than or equal to 45 degrees, and the second angle is greater than or equal to 0 degrees and less than or equal to 13 degrees. The inclination angles of the two side walls in the fourth wire slot are respectively a third angle and a fourth angle, the third angle is greater than or equal to 40 degrees and less than or equal to 45 degrees, and the fourth angle is greater than or equal to 0 degrees and less than or equal to 13 degrees.
13. The silicon wafer processing apparatus of claim 11 or 12, wherein The main roller comprises a cutting section and a pre-cutting section, the pre-cutting section is arranged at least at one end of the main roller, and the third wire slot and the fourth wire slot are arranged on the pre-cutting section.
14. The silicon wafer processing apparatus of claim 13, wherein The main roller comprises a main roller body composed of the cutting section and at least one pre-cutting section. The ratio of the length of the pre-cutting section along the axial direction of the main roller to the length of the main roller body along the axial direction of the main roller is greater than or equal to 0.025 and less than or equal to 0.
1.
15. The apparatus of claim 13 wherein, Along the axial direction of the main roller, the cutting section has a plurality of intermediate wire slots, and the distance between adjacent third wire slots and fourth wire slots in the pre-cutting section is greater than or equal to the distance between adjacent two intermediate wire slots in the cutting section.
16. The silicon wafer processing apparatus of claim 15, wherein The adjacent third wire slot and fourth wire slot are symmetrically arranged with respect to the center lines of the two.
17. The silicon wafer processing apparatus of claim 16, wherein Along the axial direction of the main roller, the slot width of the third wire slot is less than or equal to the slot width of the intermediate wire slot.
18. The silicon wafer processing apparatus of claim 11 or 12, wherein, The third wire slot and the fourth wire slot each have a slot bottom connecting the two side walls, and the slot bottom is arc-shaped.
19. The silicon wafer processing apparatus of claim 18, wherein, The ratio of the depth of the slot bottom in the third wire slot to the depth of the third wire slot is greater than or equal to 0.15 and less than or equal to 0.
2. The ratio of the depth of the slot bottom in the fourth wire slot to the depth of the fourth wire slot is greater than or equal to 0.15 and less than or equal to 0.
2.
20. The silicon wafer processing apparatus of claim 11 or 12, wherein In the adjacent third wire slot and fourth wire slot, the difference between the inclination angle of one side wall and the inclination angle of the adjacent side wall of the other wire slot is less than or equal to 5 degrees.
21. A silicon wafer processing system, characterized by, Comprise: The silicon wafer processing device according to any one of claims 1 to 20; A clamping device for clamping a to-be-processed silicon rod to move along a first side to a second side of a wire net of the silicon wafer processing device.
22. The silicon wafer processing system according to claim 21, wherein The to-be-processed silicon rod comprises a processing area corresponding to the first area and a wear area corresponding to the second area, and the wear area is arranged to be closer to the wire net than the processing area in the moving direction of the to-be-processed silicon rod; Or The diameter of the main roller in the second area is greater than the diameter in the first area, so that the cutting line of the second area is closer to the first side than the cutting line of the first area; So that when the clamping device clamps the to-be-processed silicon rod to move to the silicon wafer processing device, the wear area contacts the wire net earlier than the processing area.
Citation Information
Patent Citations
Cutting roller and cutting equipment
CN113715182A
Silicon wafer cutting method
CN113733377A
Diamond wire multi-wire cutting auxiliary wire guiding device
CN209971168U
Guide wheel groove type structure, guide wheel and silicon wafer cutting equipment
CN220409262U
Main roller for multi-wire cutting
CN220499591U
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