Scanning magnetron device for PVD rectangular planar target, and thin film deposition apparatus

Abstract

The present application relates to the technical field of vacuum deposition. Disclosed are a scanning magnetron device for a PVD rectangular planar target, and a thin film deposition apparatus. The magnetron device comprises: a magnetron; and a driving device, used to drive the magnetron to move relative to a rectangular planar target along a first direction and a second direction, such that the magnetron reaches limit positions corresponding to corners of the rectangular planar target. A movement stroke of the magnetron comprises a first stroke and a second stroke that are successively performed. During the first stroke, the magnetron moves between a first limit position and a second limit position; during the second stroke, the magnetron moves between the first limit position and a third limit position, or moves between the second limit position and the third limit position; the first limit position, the second limit position and the third limit position are different limit positions. In the present embodiment, a limit position reached by the magnetron after the second stroke is completed is different from a limit position from which the magnetron departs or which the magnetron reaches during the first stroke, thus improving the etching uniformity.

Description

Scanning magnetron device and thin film deposition equipment for PVD rectangular planar targets Technical Field

[0001] This application relates to the field of vacuum deposition technology, and in particular to a scanning magnetron device and thin film deposition equipment for a PVD rectangular planar target. Background Technology

[0002] Since the advent of magnetron sputtering coating technology, the main issues of concern in magnetron sputtering have been: target utilization, deposition efficiency, film uniformity, film density, stability during the deposition process, and meeting various complex film deposition requirements. For planar target magnetron sputtering, due to the effect of orthogonal electromagnetic fields on sputtered ions, ions and electrons are confined in closed magnetic field lines, resulting in uneven etching of the sputtering target during sputtering. Once the target is etched through, it is scrapped, resulting in consistently low target utilization, generally below 40%. Targets are the basic consumables in the magnetron sputtering process, not only used in large quantities, but their utilization rate also plays a crucial role in the process and production cycle. Although targets can be recycled and reused, their utilization rate still has a significant impact on product cost control and improving product competitiveness. Therefore, it is imperative to find ways to improve target utilization, and many manufacturers have implemented various improvement measures in this regard.

[0003] The uneven etching on the PVD target surface, i.e., the varying depths of the grooves, leads to low target utilization, a problem stemming from the specific design and movement trajectory of the magnetron. The first inventor of this application, Yang, and other inventors have described in detail how to improve target utilization by optimizing the design of the rotating planar magnetron for planar circular targets. This application's first inventor, Yang, and others have provided a detailed description in US Patent Pat. 7,186,319. Circular targets are commonly used in PVD coating processes for 6, 8, and 12-inch wafers.

[0004] For over two decades, rectangular planar target magnetron sputtering technology has been heavily developed for manufacturing flat panel displays, such as computer monitors and television screens. Magnetron sputtering is the preferred method for creating the conductive layer of a display screen, which is formed by depositing aluminum, molybdenum, and transparent conductors (such as indium tin oxide, ITO) onto a typical rectangular, large-area panel of glass or a thin polymer sheet. The final panel may contain thin-film transistors, plasma displays, field emitters, liquid crystal display (LCD) elements, or organic light-emitting diodes (OLEDs). Similar technologies can be used for optical thin-film layers in coated glass windows. The main difference between rectangular planar target magnetron sputtering and the long-developed and more mature wafer magnetron sputtering technology lies in the former's large size and rectangular shape, while the latter uses a relatively smaller, circular target.

[0005] Demaray et al. described a flat-panel sputtering apparatus 20 in US Patent No. 5565071A, as shown in Figure 1. The thin film deposition chamber mainly includes: a vacuum chamber 22; a rectangular sputtering stage 24, which is typically electrically grounded; a rectangular glass panel or other substrate 26 supported by the stage 24; and a rectangular sputtering target 28, parallel and corresponding to the substrate 26. The material of the rectangular target 28 is the metal to be sputtered and deposited onto the substrate. The rectangular target 28 is vacuum-sealed to the chamber 22 through a first insulating plate 30.

[0006] Typically, a thin sheet of rectangular planar target 28 to be sputtered is bonded to a backing plate 32, on which cooling water channels are formed to cool the rectangular planar target 28. The sputtered ions generated by bombarding the target material originate from a gas, typically argon, added to the vacuum chamber 22. Advantageously, the backing cavity 34 is vacuum-sealed to the back of the planar target backing plate 32 via a second insulating plate 36 and evacuated to a low pressure using a mechanical vacuum pump, thereby substantially eliminating the pressure difference across the large-area rectangular planar target 28 and its backing plate 32, and the large deformation that a large pressure difference could cause. Therefore, the large-area rectangular planar target 28 and its backing plate 32 can be made thinner.

[0007] A DC power supply applies a negative voltage to a rectangular planar target 28, which is the cathode. Note that this negative voltage is relative to the base electrode, i.e., the base 24 or other electrically grounded components of the chamber, such as a mask. An electric field is generated within the PVD vacuum chamber 22 to accelerate Ar ions sputtering the target and generate electrons from the target. These electrons are used to generate and sustain plasma 38 near the target surface. Positive Ar ions are attracted to and bombard the negatively voltaged rectangular planar target 28. A portion of the sputtered metal atoms deposit onto a substrate 26, forming a thin film layer thereon containing at least a portion of the material composition of the target. Metal oxides or nitrides can be deposited in a process called "reactive magnetron sputtering" by additionally supplying oxygen or nitrogen to the vacuum chamber 22 during metal magnetron sputtering.

[0008] To improve the sputtering rate, a racetrack-shaped magnetron 40, as shown in Figure 2, is conventionally placed on the back of the planar target backplate 32. It has a central magnetic pole 42 located in the middle, surrounded by outer magnetic poles 44 of opposite polarity, generating a magnetic field near the etched surface of the rectangular planar target 28 within the chamber. The central magnetic pole 42 and the outer magnetic poles 44 are separated by a substantially constant magnetic pole gap 46, which corresponds to the high-density, closed-loop plasma 38 generated on the surface of the rectangular planar target 28. The outer magnetic poles 44 consist of two straight sections 48 and two semi-circular sections 50.

[0009] The racetrack-shaped magnetron 40 applies an external magnetic field to trap electrons and confine the plasma near the target, thereby increasing the plasma density and thus increasing the sputtering rate of the rectangular planar target 28. The closed shape of the magnetic field distributed along a single closed track creates a closed plasma loop, typically formed along the magnetic pole gap 46, and effectively prevents plasma leakage from both ends. It should also be noted that the racetrack-shaped magnetron 40 is relatively small compared to the size of the rectangular planar target 28, requiring it to scan back and forth behind the target 28 to achieve full-area etching of the target surface.

[0010] Halsey et al. disclosed a magnetron sputtering structure and method in US Pat. 5,855,744, which improves the thickness control and uniformity of deposited thin films by adjusting the distance between the magnetron or a portion of the magnetron and the sputtering target. During sputtering of a rectangular substrate, the magnetron assembly scans back and forth, utilizing a spacer guide, a contour guide, a cam plate, and a cam plate-controlled follower to achieve improved film thickness uniformity or control despite the influence of magnetic field anomalies caused by the magnetron scanning.

[0011] De Bosscher et al. described coupled two-dimensional scanning using a racetrack-shaped magnetron in US Pat. 6322670 and US Pat. 6416630. The magnetron described by De Bosscher et al. was originally developed for rectangular panels with a size of approximately 400 mm x 600 mm. However, for economic reasons related to mass production and to provide larger display areas, the size of the panels has been increasing over the years, and the size of the target material has also increased accordingly.

[0012] In one method for adapting to a larger area target, the racetrack-shaped magnetron 40 in Figure 2 is replicated up to nine times along the scanning direction in the first direction to cover most of the target area, see US Pat. 5458759 by Hosokawa et al. However, this approach still requires scanning to average the distribution of the magnetic field.

[0013] Tepman disclosed various magnetrons with coiled plasma loops in US patent application US2006 / 0049040A1, particularly magnetrons with rectangular profiles. The magnetrons can be arranged in a serpentine pattern, with parallel straight sections connected by curved sections; or arranged in a rectangular spiral pattern, with straight sections arranged in orthogonal directions. A plasma ring is formed between inner and outer magnetic poles, with the inner poles forming a coiled shape and the outer poles having opposite polarities to the inner poles. Figures 3 and 4 show schematic diagrams of the serpentine magnetron 52, spiral magnetron 56, and corresponding serpentine plasma closed loops 54 and 58 provided by Tepman. Tepman also provided various magnetron scanning schemes. However, using the magnetrons and scanning schemes proposed by Tepman, it is still difficult to achieve uniform etching over a large area in the central part of the target, and it does not solve the problem of full-area etching at the four corners of a rectangular target.

[0014] As can be seen from the preceding text, the common practice to address the issues of full-area etching of the target and uniform substrate coating is to scan the target with a magnetron. However, when the magnetron scans along a direction perpendicular to its length, the etching depth of the arc-shaped end of the magnetron on the planar target will be greater than that of the straight portion, resulting in deeper etching grooves at the edges of the target. In summary, the existing magnetron design and scanning scheme are not well optimized, making it difficult to achieve full-area etching of the target.

[0015] Chen Xiaotong proposed a solution in Chinese patent CN 111910162 A, which involves setting a processor and a primary magnetic field source outside the cavity. The processor is used to acquire target consumption information during magnetron sputtering. It should be noted that the target consumption information reflects the consumption status of the target during magnetron sputtering, such as the thickness data of various regions of the target, and the power and duration of bombardment. Based on the consumption information, the processor can determine compensation information to compensate for the non-uniform magnetic field generated by the magnet. The secondary magnetic field source is positioned opposite the magnet and electrically connected to the processor. It is used to generate a corresponding secondary magnetic field based on the compensation information to compensate for the non-uniform magnetic field generated by the magnet. This reduces the magnetic field strength in areas where the target is consumed quickly, thereby slowing down the consumption rate in those areas, or increases the magnetic field strength in areas where the target is consumed slowly, thereby accelerating the consumption rate in those areas. This improves the uniformity of target consumption, thus increasing the utilization rate of the target and the uniformity of the film layer formed on the substrate. However, this method requires setting up a complex magnetic control structure and introducing a complex control process, which will increase costs.

[0016] As mentioned earlier, current magnetron scanning technology enables relatively uniform etching of the interior of planar targets. The problem of full-area etching of rectangular planar targets typically occurs at the four sides and four corners, especially the corners. To ensure full-area etching, the magnetron needs to periodically reach the corners. However, in related technologies, the magnetron scanning trajectory can only reach part of the corners, resulting in inadequate etching of other corners, affecting target utilization, and causing particle problems due to secondary deposition at the edges and corners of the planar target. Summary of the Invention

[0017] This application aims to address at least one of the technical problems existing in the prior art. To this end, this application proposes a scanning magnetron device for a PVD rectangular planar target, which can improve the utilization rate of the target material.

[0018] This application also proposes a thin film deposition apparatus.

[0019] The scanning magnetron device for a PVD rectangular planar target according to the first embodiment of this application includes:

[0020] Magnetron;

[0021] A driving device is used to drive the magnetron to move relative to the rectangular planar target along a first direction and a second direction, so that the magnetron reaches the extreme positions corresponding to each corner of the rectangular planar target, wherein the first direction is parallel to the width direction of the magnetron and the second direction is parallel to the length direction of the magnetron.

[0022] The movement of the magnetron includes a first stroke and a second stroke performed sequentially. In the first stroke, the magnetron moves between a first limit position and a second limit position, or between a third limit position and a fourth limit position. In the second stroke, the magnetron moves between the first limit position and the third limit position, or between the second limit position and the fourth limit position. The first limit position, the second limit position, the third limit position, and the fourth limit position are all different limit positions. The first limit position and the second limit position, as well as the third limit position and the fourth limit position, are all distributed along the first direction. The first limit position and the third limit position, as well as the second limit position and the fourth limit position, are all distributed along the diagonal direction of the rectangular planar target.

[0023] The magnetic control device according to the embodiments of this application has at least the following beneficial effects:

[0024] Starting from the same starting position, the limit position reached by the magnetron after completing the second stroke will necessarily be different from the limit position started or reached by the magnetron in the first stroke. Therefore, through the alternating cycle of the first stroke and the second stroke, the magnetron can reach each limit position. When the magnetron is at the limit position, it can etch the corner of the rectangular planar target. Therefore, the magnetron in this embodiment can etch each corner of the rectangular planar target.

[0025] In other embodiments of this application, the first stroke includes a single movement of the magnetron between the first extreme position and the second extreme position or between the third extreme position and the fourth extreme position, and the second stroke includes a single movement of the magnetron between the first extreme position and the third extreme position or between the second extreme position and the fourth extreme position.

[0026] In other embodiments of this application, the magnetron moves synchronously along the first direction and the second direction to perform the first stroke, and / or the magnetron moves synchronously along the first direction and the second direction to perform the second stroke.

[0027] In other embodiments of this application, during the first stroke, the single scan duration of the magnetron along the first direction is A times the single scan duration along the second direction, where A satisfies the following setting: Axa is an even number, where a is a positive integer;

[0028] In the second stroke, the single scan duration of the magnetron along the first direction is B times the single scan duration along the second direction, where B satisfies the setting that B x b is an odd number, where b is a positive integer.

[0029] In other embodiments of this application, A is an even number and B is an odd number.

[0030] In other embodiments of this application, the corner is a rounded corner, and the magnetron includes an outer magnetic assembly and an intermediate magnetic assembly disposed inside the outer magnetic assembly. The outer magnetic assembly includes straight portions located on opposite sides of the intermediate magnetic assembly, and rounded portions connecting the same end of the straight portions on both sides. The straight portions are parallel to the second direction.

[0031] When the magnetron moves to the extreme position, the arc portion is concentric with the corresponding arc corner portion.

[0032] In other embodiments of this application, when the magnetron moves to the extreme position, the outer edge of the straight portion on one side exceeds the corresponding side edge of the rectangular planar target by a set distance, and / or, the outer edge of the arc portion at one end exceeds the outer edge of the arc corner of the corresponding rectangular planar target.

[0033] In other embodiments of this application, the magnetron includes an outer magnetic component and an intermediate magnetic component disposed inside the outer magnetic component, wherein the magnetic field strength of the intermediate magnetic component is greater than that of the outer magnetic component.

[0034] In other embodiments of this application, the outer magnetic assembly includes a plurality of outer magnets, the middle magnetic assembly includes a plurality of middle magnets, the height of the outer magnets and the middle magnets from the rectangular planar target and their own height are equal, and along the direction parallel to the rectangular planar target, the cross-sectional area of ​​the outer magnets is smaller than the cross-sectional area of ​​the middle magnets.

[0035] A thin film deposition apparatus according to a second embodiment of this application includes:

[0036] Vacuum chamber;

[0037] The aforementioned magnetic control device;

[0038] A target mounting device is used to fix a planar target within the vacuum chamber;

[0039] A base plate is used to fix the substrate within the vacuum chamber.

[0040] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0041] The present application will be further described below with reference to the accompanying drawings and embodiments, wherein:

[0042] Figure 1 is a schematic diagram of a typical magnetron sputtering device in related technologies;

[0043] Figure 2 is a schematic diagram of a magnetron in the related technology;

[0044] Figure 3 is a schematic diagram of a magnetron in the related technology;

[0045] Figure 4 is a schematic diagram of a magnetron in the related technology;

[0046] Figure 5 is a schematic diagram of the magnetron scanning along a fixed trajectory;

[0047] Figure 6 shows the relationship between the velocity, time and magnetron position of the motion components in the first and second directions when the magnetron scans along a fixed trajectory.

[0048] Figure 7 is a schematic diagram of the magnetron scanning via a variable trajectory;

[0049] Figure 8 shows the relationship between the velocity, time and magnetron position of the motion components in the first and second directions when the magnetron scans along a variable trajectory.

[0050] Figure 9 is a schematic diagram of the magnetron in Figure 7;

[0051] Figure 10 is a schematic diagram of the magnetron with an unbalance ratio of less than 1 and the rectangular planar target in Figure 7.

[0052] Reference numerals: 20. Flat panel sputtering equipment; 22. Vacuum chamber; 24. Base plate; 26. Substrate; 28. Rectangular planar target; 30. First insulating plate; 32. Back plate; 34. Back cavity; 36. Second insulating plate; 38. Plasma; 40. Racetrack-shaped magnetron; 42. Middle magnetic pole; 44. Outer magnetic pole; 46. Magnetic pole gap; 48. Straight section; 50. Semi-circular section; 52. Serpentine magnetron; 54. Serpentine plasma closed loop; 56. Helical magnetron; 58. Helical plasma closed loop; 60. Magnetron; 62. Outer magnetic assembly; 62. Middle magnetic assembly. 64, Gap; 66, Outer Magnet; 68, Middle Magnet; 70, Outer Linear Unit; 72, Outer Arc Unit; 74, Inner Linear Unit; 76, Inner Arc Unit; 78, Linear Section; 80, Arc Section; 82, Plasma Centerline; 84, Gap Centerline; 86, Magnetron First Corner M1; Magnetron Second Corner M2; Magnetron Third Corner M3; Magnetron Fourth Corner M4; Target First Corner T1; Target Second Corner T2; Target Third Corner T3; Target Fourth Corner T4; X-direction Single Scan Duration t x Y-direction single scan duration t y . Detailed Implementation

[0053] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0054] In the description of this application, it should be understood that the orientations mentioned are only for the convenience of describing this application and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0055] In the description of this application, "multiple" means two or more. If "first" or "second" is mentioned, it is only for the purpose of distinguishing technical features and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or the order of the technical features indicated.

[0056] In the description of this application, unless otherwise expressly defined, terms such as "setup," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this application in conjunction with the specific content of the technical solution.

[0057] In the description of this application, the reference to terms such as "one embodiment," "some embodiments," etc., means that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0058] To facilitate understanding, the general principle of magnetron sputtering is first explained with reference to Figure 1. During sputtering, argon gas is introduced into the vacuum chamber, and the racetrack-shaped magnetron 40 generates a magnetic field. The negative voltage applied to the rectangular planar target 28 is used to generate an electric field. Under the action of the electric field, electrons move from the rectangular planar target 28 to the substrate 26. During the movement, they collide with argon atoms, causing them to ionize and generate argon ions and new electrons. The argon ions are accelerated by the electric field and fly towards the rectangular planar target 28, bombarding the target surface to sputter the target material. The sputtered target material particles are deposited on the surface of the substrate 26 to form a thin film. The argon ions and new electrons generated when electrons and argon atoms collide with each other during sputtering are used to form and maintain plasma 38 on the surface of the target material, thereby repeating the above process of argon gas ionization and bombardment, realizing the continuous deposition of magnetron sputtering thin films.

[0059] Referring to Figure 2, a typical racetrack-shaped magnetron 40 is shown, which includes a central magnetic pole 42 and an outer magnetic pole 44. The outer magnetic pole 44 is arranged around the central magnetic pole 42, and a magnetic pole gap 46 is formed between them. The outer magnetic pole 44 includes a straight portion 48 and a semi-circular portion 50. When the magnetic field strength of the central magnetic pole 42 and the outer magnetic pole 44 is the same, the magnetic field strength is strongest at the center line of the magnetic pole gap 46. Therefore, the density of the plasma formed is highest at the center line of the magnetic pole gap 46. The actual plasma density distribution is roughly a normal distribution with the center line of the gap as the symmetry line. That is, the plasma density is highest at the center line, and the plasma density is lower closer to the magnetic poles on both sides.

[0060] As shown in Figure 5, the magnetron 60 of this application is a linear magnetron with a racetrack shape. However, the magnetron 60 can also be other shapes, such as a square magnetron, as shown in Figures 3 and 4. The length of the rectangular planar target 28, that is, the dimension of the planar target along the second direction, can be approximately the same as the length of the magnetron 60. The width of the rectangular planar target 28 has a close relationship with the width of the magnetron 60 in terms of the utilization rate of the target material. If the width of the rectangular planar target 28 is very close to the width of the magnetron 60, the magnetron 60 can only remain fixed, and the utilization rate of the target material will be very low. When the rectangular planar target 28 is much wider than the magnetron 60, and the magnetron 60 can move back and forth along the first direction, the utilization rate of the target material can be rapidly improved.

[0061] However, although the etching uniformity problem in the middle region of the rectangular planar target 28 is currently solved by scanning with the magnetron 60, uneven etching still exists at the edges and corners of the rectangular planar target 28, especially at the corners of the target material. Part of the reason for this problem is that the magnetron 60 typically uses a fixed trajectory for scanning, meaning it can only reach part of the corners, resulting in insufficient etching of other corners. Specifically, referring to Figure 5, the solid lines indicate the actual limit positions of the magnetron 60, and the dashed lines indicate other limit positions that the magnetron 60 can reach. Here, it is necessary to clarify the concept of "limit positions." Limit positions refer to the farthest positions that the magnetron 60 can reach in the first and second directions without affecting its normal operation. These typically refer to the position where the outermost magnetic pole of the magnetron 60 is closest to the edge of the rectangular planar target 28. For example, the four corners of the magnetron 60 can be named the first corner M1, the second corner M2, and the third corner, respectively. M3 and M4 are the four corners of the rectangular planar target 28, respectively named as the first corner T1, second corner T2, third corner T3, and fourth corner T4. When the magnetron 60 is in different extreme positions (upper left, upper right, lower right, and lower left), the first corner M1 can etch the first corner T1, the second corner M2 can etch the second corner T2, the third corner M3 can etch the third corner T3, and the fourth corner M4 can etch the fourth corner T4. Note that M is the first letter of Magnetron (60), and T is the first letter of Target (28).

[0062] As shown in Figure 5, if the magnetron 60 scans a distance L1 along the first direction from the extreme position of the first corner T1 (e.g., the upper left corner) of the corresponding rectangular planar target 28 without displacement along the second direction, then the magnetron 60 will reach the extreme position of the second corner T2 (e.g., the upper right corner) of the corresponding rectangular planar target 28. If the magnetron 60 scans a distance L2 along the second direction from the extreme position of the second corner T2 of the corresponding rectangular planar target 28 without displacement along the first direction, then the magnetron 60 will reach the extreme position of the third triangular portion T3 (e.g., the lower right corner) of the corresponding rectangular planar target 28. If the magnetron 60 scans a distance L1 along the first direction from the extreme position of the third triangular portion T3 of the corresponding rectangular planar target 28 without displacement along the second direction, then the magnetron 60 will reach the extreme position of the fourth corner T4 (e.g., the lower left corner) of the corresponding rectangular planar target 28. Thus, if the magnetron 60 moves in only one direction at a time, it can reach any corner. However, in actual use, the magnetron 60 scans not only in one direction but often simultaneously in two directions. In other words, the movement of the magnetron 60 is a composite motion containing both a first-direction motion component and a second-direction motion component, and its trajectory resembles a sawtooth shape. Since the dimension of the rectangular planar target 28 along the first direction is significantly larger than the dimension of the magnetron 60 along the first direction, while the dimension of the rectangular planar target 28 along the second direction is relatively close to the dimension of the magnetron 60 along the second direction, the duration t of a single scan in the X direction by the magnetron 60 moving from one extreme position to another (e.g., from the upper left corner to the upper right corner) along the first direction is relatively short. x This will also be significantly greater than the single scan time t of the magnetron 60 moving from one extreme position to another along the second direction (e.g., from the upper left corner to the lower left corner). y Therefore, during the scanning process of the magnetron 60 from one extreme position to another along the first direction, it has already performed multiple reciprocating scans along the second direction.

[0063] Typically, for the sake of simplifying control, the duration of a single scan in the X direction is t. x The duration t of a single scan in the Y direction y For example, if the magnetron 60 starts from the extreme position in the upper left corner of Figure 5, and the time t is a multiple of an integer, then... x It then reaches the extreme position in the upper right corner, and after twice the single scan time t in the X direction... x Then return to the extreme position in the upper left corner; taking an odd multiple as an example, if the magnetron 60 starts from the extreme position in the upper left corner of Figure 5, after a single scan time t in the X direction... x It then reaches the extreme position in the lower right corner, and after twice the single scan time t in the X direction... xThen it returns to the extreme position in the upper left corner. This process can also be illustrated by the curves of the velocity and position of the magnetron 60 in Figure 6. Curve 1 in Figure 6 shows the trend of the velocity component of the magnetron 60 along the first direction as a function of time and the time point at which the magnetron 60 reaches the extreme position. Curve 2 in Figure 6 shows when t x With t y The ratio is even, for example, t. x / t y When t = 4, the trend of the velocity of the component moving along the second direction of the magnetron 60 as a function of time and the time point at which the magnetron 60 reaches its limit position. Curve 3 in Figure 6 shows the trend of the velocity of the component moving along the second direction of the magnetron 60 as a function of time. x With t y The ratio is odd, for example, t x / t y When = 5, the trend of the velocity of the magnetron 60 along the second direction as a function of time and the time point at which the magnetron 60 reaches the limit position. Referring to curve 1, the single scan duration t in the X direction during the first stage. x Inside, the magnetron 60 starts from the extreme position corresponding to the first corner T1, from V 1X (=0) After gradual acceleration (the inclined segment on the left), maintain V. 2X After moving a certain distance, gradually decelerate (on the inclined section on the right), until the speed V reaches zero. 1X At that instant, the magnetron 60 reaches a limit position, and then moves back to its original limit position. Referring to curve 2, the duration t of a single scan in the X direction during the first stage... x Inside, the magnetron 60 undergoes multiple acceleration-uniform speed movement-deceleration cycles in the second direction. Combining the movements in both directions, the magnetron 60 reaches the extreme position corresponding to the second corner T2. Subsequently, the magnetron 60 moves again, completing the second stage of a single scan in the X direction for a duration t. x Afterwards, the magnetron 60 eventually returns to the extreme position corresponding to the first corner T1. The difference between curve 3 and curve 2 is that after the first stage, the magnetron 60 is at the extreme position corresponding to the third corner T3, rather than the extreme position corresponding to the second corner T2.

[0064] As can be seen from the above, for t x It is t y In scenarios where the value is an even multiple, if the starting position of the magnetron 60 is the upper left or upper right corner, the magnetron 60 can only reach the extreme positions of the upper left and upper right corners, and the lower left and lower right corners of the rectangular planar target 28 cannot be etched; for t x It is t yIn scenarios where the value is an odd multiple, if the starting position of the magnetron 60 is the upper left corner, the magnetron 60 can only reach the extreme positions of the upper left and lower right corners. The lower left and upper right corners of the rectangular planar target 28 cannot be etched, resulting in the rectangular planar target 28 not being fully etched.

[0065] Based on the above problems, this application proposes a scanning magnetron device for a PVD rectangular planar target, which includes a magnetron 60 and a driving device, wherein the driving device is used to drive the magnetron 60 to move.

[0066] Specifically, referring to Figure 5, the driving device is used to drive the magnetron 60 to move relative to the rectangular planar target 28 along a first direction and a second direction, so that the magnetron 60 reaches the extreme positions of each corner of the corresponding rectangular planar target 28. The extreme positions of each corner of the rectangular planar target 28 and the magnetron 60 can be understood as described above. The first direction is parallel to the width direction of the magnetron 60, and the second direction is parallel to the length direction of the magnetron 60. It should be noted that "the driving device drives the magnetron 60 to move relative to the rectangular planar target 28 along the first and second directions" can mean that the driving device drives the magnetron 60 to move simultaneously along both directions, or it can mean that the driving device drives the magnetron 60 to move only along the first direction or only along the second direction.

[0067] Referring to Figure 7, in this embodiment, during the scanning process, the movement of the magnetron 60 includes a first stroke and a second stroke performed sequentially. In the first stroke, the magnetron 60 moves between a first and a second extreme position, or between a third and a fourth extreme position. In the second stroke, the magnetron 60 moves between a first and a third extreme position, or between a second and a fourth extreme position. The first, second, third, and fourth extreme positions are all different extreme positions. That is, in the first stroke, the magnetron 60 moves between two extreme positions in the direction perpendicular to the magnetron's long axis; in the second stroke, the magnetron 60 moves between two extreme positions in the diagonal direction. Thus, starting from the same starting position, the limit position reached by the magnetron 60 after completing the second stroke will necessarily be different from the limit position reached by the magnetron 60 after the first stroke. Therefore, through the alternating cycle of the first stroke and the second stroke, the magnetron 60 can reach each limit position. When the magnetron 60 is at the limit position, it can etch the corner of the rectangular planar target 28. Therefore, the magnetron 60 in this embodiment can etch each corner of the rectangular planar target 28.

[0068] This process can also be illustrated by the curves of the velocity versus position of the magnetron 60 in Figure 8. Curve 1 in Figure 8 shows the trend of the velocity of the magnetron 60 along the first direction as a function of time, and curve 2 shows the change of the velocity of the magnetron 60 along the first direction as t... x With ty The ratio is even, for example, t. x / t y When t = 4, the velocity of the component moving along the second direction of the magnetron 60 changes with time. Curve 3 shows the trend of t = 4. x With t y The ratio is odd, for example, t x / t y When = 5, the velocity of the magnetron 60 along the second direction changes with time. Referring to curve 1, the single scan duration t in the X direction during the first stage... x Inside, the magnetron 60 starts from the extreme position corresponding to the first corner T1, from V 1X (=0) After gradual acceleration (the inclined segment on the left), maintain V. 2X After moving a certain distance, gradually decelerate (the inclined segment on the right side of the left trapezoid). On the other hand, referring to curve 2, the single scan duration t in the X direction during the first stage... x Inside, the magnetron 60 undergoes multiple acceleration-uniform speed movement-deceleration cycles in the second direction. Combining the movements in both directions, the magnetron 60 reaches the extreme position corresponding to the second corner T2. Subsequently, the magnetron 60 moves again, completing the second stage of a single scan in the X direction for a duration t. x Afterwards, the magnetron 60 finally reaches the extreme position corresponding to the fourth corner T4. The difference between Figure 8 and Figure 6 is that in the first and second stages of Figure 6, t x With t y The ratio is constant. In the first and second stages of Figure 8, t x With t y The ratio changed, becoming even in the first stage and odd in the second stage.

[0069] It should be noted that, in order to better understand this solution, the relevant concepts in the foregoing embodiments need to be clearly stated. First, the first stroke and second stroke mentioned above are not specific, but rather concepts defined for ease of description. If the magnetron 60 moves only between two extreme positions within a certain time period, then the scanning stroke of the magnetron 60 within this time period is called the first stroke or the second stroke. For example, if the magnetron 60 moves from the extreme position of the first corner T1 of the target to the extreme position of the second corner T2 of the target, and then returns from the extreme position of the second corner T2 of the target to the extreme position of the first corner T1 of the target, then no matter how many times this process is repeated, it is called the first stroke. Only when the magnetron 60 starts from the extreme position of the first corner T1 or the extreme position of the second corner T2 of the target and reaches the extreme position of the third corner T3 or the extreme position of the fourth corner T4 of the target along the diagonal, can the subsequent movement be called the second stroke. If the magnetron 60 moves from the extreme position of the first corner T1 of the target to the extreme position of the second corner T2 of the target, and then moves from the extreme position of the second corner T2 of the target along the diagonal to the extreme position of the fourth corner T4 of the target, then the movement from the first corner T1 of the target to the second corner T2 of the target is called the first stroke, and the movement from the second corner T2 of the target to the fourth corner T4 of the target is called the second stroke.

[0070] Secondly, the aforementioned first, second, third, and fourth limit positions are not specific. Each limit position can satisfy the following conditions: the first and second limit positions are distributed along the first direction (i.e., the width direction of the magnetron 60); the third and fourth limit positions are distributed along the first direction; the first and third limit positions are distributed along the diagonal direction of the rectangular planar target 28; and the second and fourth limit positions are distributed along the diagonal direction of the rectangular planar target 28. For example, the first limit position is the limit position where the magnetron 60 reaches the first corner T1 (i.e., the upper left corner) of the rectangular planar target 28; the second limit position is the limit position where the magnetron 60 reaches the second corner T2 (i.e., the upper right corner) of the rectangular planar target 28; the third limit position is the limit position where the magnetron 60 reaches the third triangular part T3 (i.e., the lower right corner) of the rectangular planar target 28; and the fourth limit position is the limit position where the magnetron 60 reaches the fourth corner T4 (i.e., the lower left corner) of the rectangular planar target 28.

[0071] Based on this embodiment, the first stroke includes a single movement of the magnetron 60 between the first and second extreme positions or between the third and fourth extreme positions. The second stroke includes a single movement of the magnetron 60 from the first extreme position to the third extreme position or between the second and fourth extreme positions. That is, neither the first nor the second stroke in this embodiment includes repeated movement between the two extreme positions. Each time the magnetron 60 completes a stroke, the endpoint it reaches is not used as the starting point. This allows the corners of the rectangular planar target 28 to be more... The magnetron 60 is uniformly etched. For example, if the magnetron 60 starts from the first extreme position of the first corner T1 of the corresponding target, its movement trajectory in one cycle is as follows: first, it makes a first stroke to move from the first extreme position of the upper left corner of the corresponding target to the second extreme position of the upper right corner of the corresponding target; then, it makes a second stroke to move from the second extreme position of the upper right corner of the corresponding target to the fourth extreme position of the lower left corner of the corresponding target; then, it makes a first stroke to move from the fourth extreme position of the lower left corner of the corresponding target to the third extreme position of the lower right corner of the corresponding target; and finally, it makes a second stroke to return from the third extreme position of the lower right corner of the corresponding target to the first extreme position of the upper left corner of the corresponding target.

[0072] In other embodiments, the first stroke includes multiple reciprocating movements of the magnetron 60 between a first and a second extreme position, or between a third and a fourth extreme position. The second stroke includes multiple reciprocating movements of the magnetron 60 between a first and a third extreme position, or between a second and a fourth extreme position. For example, the magnetron 60 starts from the first extreme position corresponding to the first corner T1 of the target material. In the first stroke, the magnetron 60 repeatedly moves between the first extreme position and the second extreme position corresponding to the second corner T2 of the target material three times or an odd number of times, ensuring that the magnetron 60 always reaches the second extreme position. Then, in the second stroke, it repeatedly moves between the second extreme position and the fourth extreme position corresponding to the fourth corner T4 of the target material three times or an odd number of times, ensuring that the magnetron 60 always reaches the fourth extreme position. This process is repeated in other cases, thus, after a relatively long period of operation, each corner of the rectangular planar target 28 is etched relatively uniformly.

[0073] In some embodiments of this application, the magnetron 60 moves synchronously along a first direction and a second direction to perform a first stroke; in other embodiments, the magnetron 60 moves synchronously along the first direction and the second direction to perform a second stroke. This extends the scanning trajectory of the magnetron 60 and increases its scanning area.

[0074] Based on the foregoing embodiments, in some embodiments of this application, during the first stroke, the single scan duration of the magnetron 60 along the first direction is A times the single scan duration along the second direction, where A satisfies the setting that A xa is an even number, and a is a positive integer; similarly, during the second stroke, the single scan duration of the magnetron 60 along the first direction is B times the single scan duration along the second direction, where B satisfies the setting that B xb is an odd number, and b is a positive integer. The single scan duration of the magnetron 60 along the first direction refers to the time required for the magnetron 60 to move from one side of the first direction to the other side, which is also the aforementioned single scan duration t in the X direction. x The single scan duration along the second direction refers to the time required for the magnetron 60 to move from one side to the other in the second direction, which is the aforementioned single scan duration t in the Y direction. y .

[0075] In some specific embodiments, A is an even number and B is an odd number, in which case both a and b can be 1. In the first and second strokes of this embodiment, by setting the single scan duration in the first direction to an integer multiple of the single scan duration in the second direction, it can be guaranteed that when the magnetron 60 starts from a certain extreme position and passes through the single scan duration in the first direction, the magnetron 60 will inevitably reach another extreme position, thereby simplifying control. At the same time, A and B are even and odd numbers, respectively, which can guarantee that the magnetron 60 reaches each corner of the rectangular planar target 28. For example, referring to Figures 7 and 8, the magnetron 60 starts from the upper left corner of the target material and scans in the X direction for a single scan duration t. x The duration of a single scan in the Y direction, t y The scanning method is an even multiple of the standard method, and the duration of a single scan in the X direction is t. x After reaching the upper right corner of the target, a single scan in the X direction lasting for duration t is performed. x The duration of a single scan in the Y direction, t y The scanning method is an odd multiple of the standard method, and the duration of a single scan in the X direction is t. x After reaching the lower left corner of the target, a single scan in the X direction lasting for duration t is performed. x The duration of a single scan in the Y direction, t y The scanning method is an even multiple of the standard method, and the duration of a single scan in the X direction is t. x Then it reaches the lower right corner of the corresponding target, and then performs a single scan in the X direction for a duration of t. x The duration of a single scan in the Y direction, t y The scanning method is an odd multiple of the standard method, and the duration of a single scan in the X direction is t. x Then return to the upper left corner of the corresponding target to complete one cycle. In this way, all four corners of the rectangular planar target 28 can be etched in each cycle, thus achieving full etching of the rectangular planar target 28.

[0076] It should be noted that in some embodiments, A and B need not be limited to integers. In this case, the magnetron 60 needs to perform 'a' scans along the first direction to complete the first stroke (where 'a' is a positive integer greater than 1), and the magnetron 60 needs to perform 'b' scans along the second direction to complete the first stroke (where 'b' is a positive integer greater than 1). In other words, even if the magnetron 60 cannot reach a certain limit position after a single scan along the first direction, it can still reach a certain limit position after multiple scans. For example, if A is 4.6 and a is 10, their product 46 is an even number, indicating that the magnetron 60 completes the first stroke after 10 scans along the first direction, and at this time, the magnetron 60 has reached the limit position. Alternatively, if B is 5.3 and b is 10, their product 53 is an odd number, indicating that the magnetron 60 completes the second stroke after 10 scans along the first direction, and at this time, the magnetron 60 has reached the limit position.

[0077] In some embodiments of this application, referring to Figures 7 and 9, each corner of the rectangular planar target 28 is a rounded corner. That is, the overall shape of the rectangular planar target 28 is the shape after replacing the four corners of the rectangle with rounded surfaces. Specifically, the peripheral surface of the rectangular planar target 28 includes a first plane parallel to the first direction and a second plane parallel to the second direction, as well as rounded surfaces that are tangent to the first plane and the second plane respectively.

[0078] Based on the above structure, referring to Figures 7 and 9, the magnetron 60 of this embodiment includes an outer magnetic assembly 62 and an intermediate magnetic assembly 64, wherein the outer magnetic assembly 62 is disposed around the outside of the intermediate magnetic assembly 64. The outer magnetic assembly 62 and the intermediate magnetic assembly 64 are spaced apart to form a gap 66. Both the outer magnetic assembly 62 and the intermediate magnetic assembly 64 include multiple magnets. For easy distinction, the magnets included in the outer magnetic assembly 62 and the intermediate magnetic assembly 64 are respectively named outer magnet 68 and intermediate magnet 70 (shown in Figure 10). The magnets in the outer magnetic assembly 62 and the intermediate magnetic assembly 64 are symmetrically distributed about the center line of the magnetron 60 as the axis of symmetry.

[0079] The outer magnetic assembly 62 includes an outer linear unit 72 and an outer arcuate unit 74 connected to the end of the outer linear unit 72. The outer linear unit 72 includes a plurality of outer magnets 68, which are arranged sequentially along a second direction. The outer arcuate unit 74 is configured as an arc-shaped structure, specifically an arcuate structure. The outer arcuate unit 74 can be a single structure or it can include a plurality of outer magnets 68 distributed along an arc.

[0080] Two outer linear units 72 are provided, and the two outer linear units 72 are arranged parallel to each other on opposite sides of the middle magnetic component 64. The outer linear units 72 and the middle magnetic component 64 are spaced apart to form a gap 66. In the illustrated embodiment, the two outer linear units 72 are symmetrically arranged relative to the middle magnetic component 64. The two ends of the outer arc unit 74 are respectively connected to the same end of the two outer linear units 72.

[0081] The intermediate magnetic assembly 64 includes an inner linear unit 76 and an inner arcuate unit 78 connected to the end of the inner linear unit 76. The inner linear unit 76 includes a plurality of intermediate magnets 70, which are arranged sequentially along a second direction. The inner arcuate unit 78 is configured as an arc-shaped structure, specifically an arcuate structure. The inner arcuate unit 78 is generally a single structure, but may also include a plurality of intermediate magnets 70 distributed along an arc.

[0082] It should be noted that, in some embodiments, the outer linear unit 72 and the inner linear unit 76 constitute the linear portion 80 of the magnetron 60. The linear portion 80 includes two outer linear units 72, and both ends of the linear portion 80 are connected to arc-shaped portions 82, thereby forming a racetrack-shaped magnetron. In other embodiments, the linear portion 80 may also include a greater number of outer linear units 72 and inner linear units 76 to form a wider magnetron.

[0083] In this embodiment, the magnetron 60 can also etch the rounded corners of the rectangular planar target 28 to further improve the utilization rate of the rectangular planar target 28. When the magnetron 60 is in its extreme position, the outer arc unit 74 of the magnetron 60 is concentrically arranged with the corresponding arc corner on the rectangular planar target 28. For example, when the magnetron 60 is in its extreme position on the upper left side of the figure, the arc portion 82 is concentrically arranged with the upper left arc corner of the rectangular planar target 28. In this way, the plasma 38 corresponding to the outer arc unit 74 can be distributed approximately along the contour of the arc corner, thereby achieving full-area etching at the arc corner.

[0084] It should be noted that the term "concentric" in the aforementioned embodiments should be understood as approximately concentric. That is, the center of the outer arc unit 74 of the magnetron 60 can deviate from the center of the arc corner of the planar target within a small range, as long as the outer arc unit 74 of the magnetron 60 can approximately correspond to the arc corner.

[0085] In some embodiments, referring to FIG7, when the magnetron 60 is in the extreme position, the outer edge of the magnetron 60 will extend beyond the outer edge of the rectangular planar target 28 by a certain distance. As mentioned above, the plasma density distribution is roughly a normal distribution with the center line of the gap as the symmetry line. The plasma density is highest at the center line. When the outer edge of the magnetron 60 extends beyond the rectangular planar target 28, the middle straight section with stronger etching capability can get closer to the edge of the rectangular planar target 28, thereby increasing the etching uniformity of the edge region of the rectangular planar target 28. Combined with the aforementioned setting the outer arc unit 74 of the magnetron 60 in the extreme position and the arc corner of the rectangular planar target 28 as concentric, the rounded corner can be etched better. In some specific embodiments, when the magnetron 60 moves to the extreme position, the outer edge of the outer straight unit 72 on one side extends beyond the corresponding side edge of the rectangular planar target 28 by a set distance. For example, in FIG7, the left outer edge of the left outer straight unit 72 extends beyond the left edge of the rectangular planar target 28 by a certain distance d. x In other specific embodiments, the outer edge of the outer arc unit 74 at one end extends beyond the outer edge of the arc corner of the corresponding rectangular planar target 28. For example, in Figure 7, the outer edge of the upper outer arc unit 74 extends beyond the outer edge of the arc corner of the upper left corner of the rectangular planar target 28 by a certain distance d. y It should be noted that the distance beyond the outer edge of the magnetron 60 should not affect the continuous magnetron sputtering. In some embodiments, the distance beyond the edge of the target material from the outer edge of the magnetron 60 is no more than 15 mm.

[0086] In some embodiments of this application, the magnetic field strength of the intermediate magnetic component 64 is greater than that of the outer magnetic component 62. The plasma density follows a normal distribution based on the premise that the magnetic field strengths of the inner and outer magnetic components are equal. If the magnetic field strength of the intermediate magnetic component 64 is greater than that of the outer magnetic component 62, the plasma center line 84 (i.e., the position with the highest density) will shift outward relative to the gap center line 86 of the gap 66, as shown in Figure 10. Thus, the deepest point of plasma etching shifts outward by a distance d relative to the gap center line 86 of the gap 66. In this way, when the magnetron 60 is in the extreme position, even if the outer edge of the magnetron 60 does not exceed the outer edge of the rectangular planar target 28, or the distance exceeding it is reduced, the requirement of full-area etching can still be met.

[0087] When the magnetic field strength of the intermediate magnetic component 64 is greater than that of the outer magnetic component 62, in some embodiments of this application, the outer magnetic component 62 includes a plurality of outer magnets 68, and the intermediate magnetic component 64 includes a plurality of intermediate magnets 70. Referring to Figure 10, the height of the outer magnets 68 and the intermediate magnets 70 from the rectangular planar target 28 and their own height are equal. Along the direction parallel to the rectangular planar target 28, the cross-sectional area of ​​the outer magnets 68 is smaller than that of the intermediate magnets 70. This is reflected in Figure 10 by the fact that the width of the intermediate magnets 70 is greater than that of the outer magnets 68. In this way, the magnetic field strength of the intermediate magnetic component 64 can be greater than that of the outer magnetic component 62, which also facilitates the design and manufacturing of the magnetron 60.

[0088] In other embodiments, the intermediate magnet 70 may be made of a material with stronger magnetic force than the outer magnet 68, which can also achieve the effect that the magnetic field strength of the intermediate magnetic component 64 is greater than that of the outer magnetic component 62.

[0089] This application also proposes a thin film deposition apparatus suitable for planar targets. Referring to FIG1, it includes a vacuum chamber 22, a base 24, a target mounting device, and a magnetron control device as described in the foregoing embodiments. The target mounting device is used to fix a rectangular planar target 28 in the vacuum chamber 22. The target mounting device may be the aforementioned first insulating plate 30 and second insulating plate 36. The base 24 is used to fix a substrate in the vacuum chamber 22 so as to deposit a film layer on the substrate.

[0090] The embodiments of this application have been described in detail above with reference to the accompanying drawings. However, this application is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of this application. Furthermore, unless otherwise specified, the embodiments and features described in the embodiments of this application can be combined with each other.

Claims

1. A scanning magnetron device for a PVD rectangular planar target, characterized in that, include: Magnetron; A driving device is used to drive the magnetron to move relative to the rectangular planar target along a first direction and a second direction, so that the magnetron reaches the extreme positions corresponding to each corner of the rectangular planar target, wherein the first direction is parallel to the width direction of the magnetron and the second direction is parallel to the length direction of the magnetron. The movement of the magnetron includes a first stroke and a second stroke performed sequentially. In the first stroke, the magnetron moves between a first limit position and a second limit position, or between a third limit position and a fourth limit position. In the second stroke, the magnetron moves between the first limit position and the third limit position, or between the second limit position and the fourth limit position. The first limit position, the second limit position, the third limit position, and the fourth limit position are all different limit positions. The first limit position and the second limit position, as well as the third limit position and the fourth limit position, are all distributed along the first direction. The first limit position and the third limit position, as well as the second limit position and the fourth limit position, are all distributed along the diagonal direction of the rectangular planar target.

2. The scanning magnetron device for a PVD rectangular planar target according to claim 1, characterized in that, The first stroke includes a single movement of the magnetron between the first extreme position and the second extreme position, or a single movement between the third extreme position and the fourth extreme position. The second stroke includes a single movement of the magnetron between the first extreme position and the third extreme position, or a single movement between the second extreme position and the fourth extreme position.

3. The scanning magnetron device for a PVD rectangular planar target according to claim 1, characterized in that, The magnetron moves synchronously along the first direction and the second direction to perform the first stroke, and / or the magnetron moves synchronously along the first direction and the second direction to perform the second stroke.

4. The scanning magnetron device for a PVD rectangular planar target according to claim 3, characterized in that, In the first stroke, the single scan duration of the magnetron along the first direction is A times the single scan duration along the second direction, where A satisfies the following setting: Axa is an even number, where a is a positive integer; In the second stroke, the single scan duration of the magnetron along the first direction is B times the single scan duration along the second direction, where B satisfies the setting that B x b is an odd number, where b is a positive integer.

5. The scanning magnetron device for a PVD rectangular planar target according to claim 4, characterized in that, A is an even number, and B is an odd number.

6. The scanning magnetron device for a PVD rectangular planar target according to claim 1, characterized in that, The corner is a rounded corner. The magnetron includes an outer magnetic assembly and an intermediate magnetic assembly disposed inside the outer magnetic assembly. The outer magnetic assembly includes straight sections located on opposite sides of the intermediate magnetic assembly and rounded sections connecting the same end of the straight sections on both sides. The straight sections are parallel to the second direction. When the magnetron moves to the extreme position, the arc portion is concentric with the corresponding arc corner portion.

7. The scanning magnetron device for a PVD rectangular planar target according to claim 6, characterized in that, When the magnetron moves to the limit position, the outer edge of the straight portion on one side exceeds the corresponding side edge of the rectangular planar target by a set distance, and / or, the outer edge of the arc portion at one end exceeds the outer edge of the arc corner of the corresponding rectangular planar target.

8. The scanning magnetron device for a PVD rectangular planar target according to claim 1, characterized in that, The magnetron includes an outer magnetic component and an intermediate magnetic component disposed inside the outer magnetic component, wherein the magnetic field strength of the intermediate magnetic component is greater than that of the outer magnetic component.

9. The scanning magnetron device for a PVD rectangular planar target according to claim 8, characterized in that, The outer magnetic assembly includes multiple outer magnets, and the middle magnetic assembly includes multiple middle magnets. The height of the outer magnets and the middle magnets from the rectangular planar target and their own height are equal. Along the direction parallel to the rectangular planar target, the cross-sectional area of ​​the outer magnets is smaller than that of the middle magnets.

10. A thin film deposition apparatus, characterized in that, include: Vacuum chamber; The scanning magnetron device for a PVD rectangular planar target according to any one of claims 1 to 9; A target mounting device is used to fix a planar target within the vacuum chamber; A base plate is used to fix the substrate within the vacuum chamber.

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