DEVICE AND METHOD FOR GAS PHASE SEPARATION

Abstract

A gas-phase deposition device according to embodiments comprises: a reactor; a support for a substrate; a source gas flow path supplying a first source gas containing silicon and chlorine; a purge gas flow path supplying a purge gas containing chlorine and hydrogen; and a control unit that regulates the supply of the first source gas and the purge gas. The control unit regulates the ratio of the sum of a second amount of substance (the amount of chlorine in the first source gas) and a third amount of substance (the amount of chlorine in the purge gas) to a first amount of substance (the amount of silicon in the first source gas) to be 30 or more in a first period. The control unit increases the flow rate of the first source gas in a second period following the first period.