Complementary type metal oxidizing layer semiconductor noise generator

A noise generator and oxide layer technology, applied in the direction of noise generation, differential amplifiers, DC-coupled DC amplifiers, etc., can solve the problems of high power consumption of noise generators, shortening the working distance of labels, and insufficient noise, etc., to achieve reduction Power consumption, effects of eliminating magnetic modulation effects

CN101202532BActive Publication Date: 2010-06-23INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
4 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2010-06-23

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to the noise generator technical field. The invention discloses a complementary metal oxide semiconductor noise generator, comprising a bias circuit which is used for providing DC working points for a dual-drain complementary metallic oxide semiconductor transistor current mirror and a differential amplifier; the dual-drain complementary metallic oxide semiconductor transistor current mirror is used for converting slight noise current signals into amplified or larger differential voltage signals which are then output to the differential amplifier; the invention also comprises the differential amplifier which is used for converting differential both-terminal signals input by the dual-drain complementary metallic oxide semiconductor transistor current mirror into single-terminal signals and amplifies and outputs the single-terminal signals. By adopting the CMOS process which is widely applied, the invention greatly reduces the power loss of noise generator and wellsolves the problem that reactive label working distance is shortened even the power loss is only a plurality of MuW.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of noise generators, in particular to a low power consumption complementary metal oxide semiconductor (CMOS) noise generator. Background technique

[0002] The noise generator is the most important component of a random number generator. The noise generator on the low-power CMOS process is a necessary part of the design of a low-power CMOS true random number generator, especially in the true random number generator used in RFID tags, which is a key technology.

[0003] RFID tags have strict requirements on power consumption, especially passive RFID tags. The noise generator composed of ordinary CMOS transistors as the noise source consumes a lot of power. Because the noise of ordinary CMOS tubes is not large enough, complex circuits are needed to effectively amplify the noise to a usable range, so more energy is consumed.

[0004] For passive radio frequency identification tags, the power consumption of ...

Examples

Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0028] Such as figure 1 as shown, figure 1 A block diagram of a low power consumption CMOS noise generator provided by the present invention, the noise generator includes: a bias circuit 10 , a split-drain CMOS transistor current mirror 11 and a differential amplifier 12 .

[0029] Wherein, the bias circuit 10 is used to provide a DC operating point for the split-drain CMOS transistor current mirror and the differential amplifier. The split-drain CMOS transistor current mirror 11 is used to convert and amplify the tiny noise current signal into a larger differential voltage signal and output it to the differential amplifier. The differential amplifier 12 is used to convert the differential double-ended signal input by t...