Nanosecond reversible phase transformation material and method for measuring phase transformation mechanism of same

Abstract

The invention discloses a nanosecond reversible phase transformation material and method for measuring a phase transformation mechanism of the same. The nanosecond reversible phase transformation material has the property of generating nanosecond reversible transformation under the single action of multiple external factors or combined action of the multiple external factors. The multiple external factors include electric field, pressure and temperature; the nanosecond reversible transformation is reversible change between order distribution and disorder distribution of atoms, atom groups or molecules inside the nanosecond reversible phase transformation material so that the nanosecond reversible phase transformation material macroscopically presents a phase transformation process generated between a crystalline state and an amorphous state, the time spent by the phase transformation process is within 0.1-1000 nanoseconds, wherein the crystalline state of the material is of a lattice structure of a cubic system; meanwhile, the material has a stable high-temperature solid phase, a stoichiometric ratio of electric neutrality, P orbit ionization degree of 0.02<r sigma'<0.31 and s-p orbit hybridization degree of 1.6<rpi-1<2.5. The invention also provides a method for measuring the phase transformation mechanism by adopting experiment means, which can be applied to the explanation of the phase transformation mechanism of the material and prediction of the phase transformation property of the material and design of a novel phase transformation material.

Description

technical field

[0001] The invention relates to a phase change material and its measurement method and experimental means, in particular to a nanosecond-level reversible phase change material and a measurement method of its phase change mechanism, belonging to the field of microelectronics nanomaterials and non-volatile memory. Background technique

[0002] Phase Change Memory (PCM), as the most potential next-generation non-volatile memory, has increasingly become a research hotspot in the past ten years (Tech.Dig.-Int.Electron Devices Meet.2001, 803). The core of the phase change memory is the phase change material. The main characteristics that the phase change material must have include: high-speed phase change in nanoseconds, long-term high temperature stability of the amorphous state, and obvious resistance between the crystalline state and the amorphous state. Difference, has more than 10 repetitions 6 Subcycle transformation capacity (Nat. Mater., 6, 824-832, 2007)....

Examples

Embodiment Construction

[0021] The present invention will be described in further detail below in conjunction with specific embodiments.

[0022] The inventors of the present invention have studied the nanosecond-level reversible phase transition mechanism of phase-change materials, and found that some phase-change materials have nanosecond-level reversible phase transition capabilities, that is, there is a reversible phase change between the amorphous and crystalline phases. Repeated phase transition, and this phase transition process occurs in the time range of 0.1 to 1000 nanoseconds. This rapid reversible phase transition is caused by a variety of external factors alone or in combination to induce changes in the internal structure of the material, including electric field, pressure, and temperature. Under the action of these external factors, a rapid reversible change between the ordered and disordered arrangement of atoms, atomic groups or molecules in the material occurs, so that the material e...

technical field

[0001] The invention relates to a phase change material and its measurement method and experimental means, in particular to a nanosecond-level reversible phase change material and a measurement method of its phase change mechanism, belonging to the field of microelectronics nanomaterials and non-volatile memory. Background technique

[0002] Phase Change Memory (PCM), as the most potential next-generation non-volatile memory, has increasingly become a research hotspot in the past ten years (Tech.Dig.-Int.Electron Devices Meet.2001, 803). The core of the phase change memory is the phase change material. The main characteristics that the phase change material must have include: high-speed phase change in nanoseconds, long-term high temperature stability of the amorphous state, and obvious resistance between the crystalline state and the amorphous state. Difference, has more than 10 repetitions 6 Subcycle transformation capacity (Nat. Mater., 6, 824-832, 2007)....

Examples

Embodiment Construction

[0021] The present invention will be described in further detail below in conjunction with specific embodiments.

[0022] The inventors of the present invention have studied the nanosecond-level reversible phase transition mechanism of phase-change materials, and found that some phase-change materials have nanosecond-level reversible phase transition capabilities, that is, there is a reversible phase change between the amorphous and crystalline phases. Repeated phase transition, and this phase transition process occurs in the time range of 0.1 to 1000 nanoseconds. This rapid reversible phase transition is caused by a variety of external factors alone or in combination to induce changes in the internal structure of the material, including electric field, pressure, and temperature. Under the action of these external factors, a rapid reversible change between the ordered and disordered arrangement of atoms, atomic groups or molecules in the material occurs, so that the material e...