Manufacturing method of tungsten silicon target material

Abstract

The invention discloses a manufacturing method of a tungsten silicon target material. The manufacturing method of the tungsten silicon target material includes: providing high-purity tungsten powder and high-purity silicon powder; mixing the tungsten powder with the silicon powder by a wet mixing process to obtain mixed powder; making the mixed powder into a tungsten silicon target material blank by a cold pressing process; and making the tungsten silicon target material blank into the tungsten silicon target material by a vacuum hotpressing process. The manufacturing method provided by the invention has the advantages of fewer technological steps and fast production speed. By means of the manufacturing method involved in the invention, the tungsten silicon target material with density greater than or equal to 99% can be obtained. And the obtained tungsten silicon target material has a uniform microstructure, and has excellent sputtering usability.

Description

technical field

[0001] The invention relates to the field of semiconductor technology, in particular to a method for manufacturing a tungsten-silicon target. Background technique

[0002] Vacuum sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons; during this period, electrons fly to the substrate, and argon ions are accelerated under the action of an electric field Bombard the target, sputter out a large number of target atoms, and the neutral target atoms (or molecules) are deposited on the substrate to form a film, and finally achieve the purpose of coating the substrate surface.

[0003] Tungsten-silicon target is a target that is often used in the vacuum sputtering process. Due to the stable performance of the silicide gate and polysilicon contact formed by the sputtering of the tungsten-silicon target, this silicide can withstand h...

Examples

preparation example Construction

[0031] Please refer to figure 1 , figure 1 It is a flowchart of a method for preparing a tungsten-silicon target according to an embodiment of the present invention. like figure 1 As shown, the method for preparing a tungsten-silicon target provided by the embodiment of the present invention mainly includes the following steps:

[0032] Step S1, providing tungsten powder and silicon powder;

[0033] Step S2, using a wet mixing process to mix the tungsten powder and the silicon powder to form a mixed powder;

[0034] Step S3, using a cold pressing process to make the mixed powder into a tungsten-silicon target blank;

[0035] In step S4, the tungsten-silicon target blank is made into a tungsten-silicon target by using a vacuum hot pressing process.

technical field

[0001] The invention relates to the field of semiconductor technology, in particular to a method for manufacturing a tungsten-silicon target. Background technique

[0002] Vacuum sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons; during this period, electrons fly to the substrate, and argon ions are accelerated under the action of an electric field Bombard the target, sputter out a large number of target atoms, and the neutral target atoms (or molecules) are deposited on the substrate to form a film, and finally achieve the purpose of coating the substrate surface.

[0003] Tungsten-silicon target is a target that is often used in the vacuum sputtering process. Due to the stable performance of the silicide gate and polysilicon contact formed by the sputtering of the tungsten-silicon target, this silicide can withstand h...

Examples

preparation example Construction

[0031] Please refer to figure 1 , figure 1 It is a flowchart of a method for preparing a tungsten-silicon target according to an embodiment of the present invention. like figure 1 As shown, the method for preparing a tungsten-silicon target provided by the embodiment of the present invention mainly includes the following steps:

[0032] Step S1, providing tungsten powder and silicon powder;

[0033] Step S2, using a wet mixing process to mix the tungsten powder and the silicon powder to form a mixed powder;

[0034] Step S3, using a cold pressing process to make the mixed powder into a tungsten-silicon target blank;

[0035] In step S4, the tungsten-silicon target blank is made into a tungsten-silicon target by using a vacuum hot pressing process.

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