Dicing die bonding film, method for manufacturing semiconductor device, and semiconductor device

Abstract

The present invention relates to a dicing chip bonding film, a method for manufacturing a semiconductor device, and a semiconductor device. The present invention provides a dicing chip bonding film that can prevent poor peeling of a covering film and prevent electrostatic damage to a semiconductor chip, etc. The present invention relates to a dicing chip bonding film that is formed in a roll shape. The dicing chip bonding film includes a covering film and a dicing sheet-integrated adhesive film arranged on the covering film. The dicing sheet-integrated adhesive film includes a dicing sheet, the dicing sheet including a base material layer whose two sides are defined by a first surface and a second surface facing the first surface, and an adhesive layer in contact with the first surface. The dicing sheet-integrated adhesive film also includes an adhesive film, the adhesive film having two sides defined by a first main surface in contact with the adhesive layer and a second main surface facing the first main surface. The surface resistance value of the second surface is 1.0×10 11 Ω / sq. or less. The surface resistance value of the second main surface is 1.0×10 12 Ω / sq. or more.

Description

Technical Field

[0001] The present invention relates to a dicing die bonding film, a method for manufacturing a semiconductor device, and a semiconductor device. Background Art

[0002] A dicing die bonding film is known, which includes a substrate layer, an adhesive layer disposed on the substrate layer, and an adhesive film disposed on the adhesive layer (see, for example, Patent Document 1). The substrate layer can be defined by a contact surface in contact with the adhesive layer and a back surface facing the contact surface.

[0003] In recent years, with the improvement of the performance of semiconductor chips, electrostatic damage has become a problem. In order to prevent electrostatic damage, there is a technology that improves the antistatic performance by adding a conductive material to the adhesive layer.

[0004] In addition, there is also a technique of adding a conductive material to an adhesive film in order to impart conductivity to the adhesive film.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2015-5636 Summary of the invention

[0008] Problem that the invention aims to solve

[0009] The technology of adding a conductive material to the adhesive layer has the following problems: the conductive material may scatter in the device during dicing and adhere to the semiconductor wafer or semiconductor chip. The conductive material may also scatter during expansion.

[0010] The technique of adding a conductive material to an adhesive film has the problem that the conductive material promotes corrosion of the lead when the adhesive film is used for lead embedding purposes. There is also the problem that the conductive material scatters during cutting.

[0011] Furthermore, the cover film may not be peeled off smoothly during dicing of the die-bonding film. The present inventors have conducted intensive studies on the cause of the peeling failure and have found that the charging of the back surface of the base material layer and the cover film may cause the peeling failure of the cover film.

[0012] An object of the present invention is to provide a dicing die bonding film which can prevent a cover film from being peeled off poorly and prevent electrostatic destruction of a semiconductor chip.

[0013] Another object of the present invention is to provide a method for manufacturing a semiconductor device using a dicing die-bonding film. Another object of the present invention is to provide a semiconductor device obtained using a dicing die-bonding film.

[0014] Solutions for solving problems

[0015] The present invention relates to a dicing die bonding film formed into a roll. The dicing die bonding film of the present invention comprises a covering film and a dicing sheet-integrated adhesive film arranged on the covering film. The dicing sheet-integrated adhesive film comprises a dicing sheet, wherein the dicing sheet comprises a base material layer whose two sides are defined by a first surface and a second surface facing the first surface, and an adhesive layer in contact with the first surface. The dicing sheet-integrated adhesive film further comprises an adhesive film, wherein the adhesive film comprises a first main surface in contact with the adhesive layer and a second main surface facing the first main surface. The surface resistance value of the second surface is 1.0×10 11 Ω / sq. or less. Since it is 1.0×10 11 Ω / sq. or less, so that peeling failure of the cover film can be prevented. The surface resistance value of the second main surface is 1.0×10 12 Ω / sq. or more. Since it is 1.0×10 12 Ω / sq. or more, so leakage current during packaging can be prevented, and electrostatic damage to the semiconductor chip can be prevented.

[0016] Preferably, the substrate layer comprises a first substrate layer having a first surface and a second substrate layer having a second surface. Preferably, the second substrate layer contains a conductive component. Preferably, the thickness of the second substrate layer is 1 μm to 30 μm. Preferably, the conductive component is an organic conductive component. Preferably, the second substrate layer further comprises one or more resins selected from the group consisting of polyethylene, polypropylene, and ethylene-vinyl acetate copolymer.

[0017] Preferably, the breaking elongation of the cutting sheet is 500% or more.

[0018] Preferably, the adhesive film contains epoxy resin or phenolic resin. Preferably, the adhesive film contains acrylic resin. Preferably, the adhesive strength of the adhesive film at 25° C. is 0.2 N or more and 3.0 N or less.

[0019] Preferably, the cover film is a polyethylene terephthalate film. Preferably, the cover film has a thickness of 20 μm to 75 μm.

[0020] The present invention also relates to a method for manufacturing a semiconductor device, which includes the following steps: a step of preparing a dicing chip bonding film; a step of pressing a semiconductor wafer to an adhesive film of a dicing sheet integrated adhesive film; a step of forming a chip for chip bonding by performing chip segmentation after the step of pressing the semiconductor wafer to the adhesive film; and a step of pressing the chip for chip bonding to an adherend. The step of pressing the semiconductor wafer to the adhesive film includes the step of peeling the dicing sheet integrated adhesive film from the cover film. The chip for chip bonding includes a semiconductor chip and a film-like adhesive arranged on the semiconductor chip.

[0021] The present invention also relates to a semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a top view schematic diagram of cutting the die bonding film.

[0023] Figure 2 It is a schematic cross-sectional view of a part of the diced die-bonding film.

[0024] Figure 3 It is a schematic cross-sectional view of the manufacturing process of a semiconductor device.

[0025] Figure 4 It is a schematic cross-sectional view of the manufacturing process of a semiconductor device.

[0026] Figure 5 It is a schematic cross-sectional view of the manufacturing process of a semiconductor device.

[0027] Figure 6 It is a schematic cross-sectional view of the manufacturing process of a semiconductor device.

[0028] Figure 7 It is a schematic cross-sectional view of a part of the dicing die-bonding film in Modification Example 4.

[0029] Figure 8 It is a schematic cross-sectional view of a manufacturing process of a semiconductor device in Modification Example 7.

[0030] Fig. 9 It is a schematic cross-sectional view of the manufacturing process of the semiconductor device in Modification Example 8.

[0031] Fig.10 1 is a schematic cross-sectional view of a dicing sheet-integrated adhesive film in an embodiment.

[0032] Description of Reference Numerals

[0033] 1 Cutting die bonding film

[0034] 11 Adhesive film

[0035] 11a 1st main surface

[0036] 11b Second main surface

[0037] 12 Cutting disc

[0038] 13 Covering film

[0039] 71 Cutting sheet integrated adhesive film

[0040] 121 base material layer

[0041] 121a Page 1

[0042] 121b Page 2

[0043] 1211 1st base material layer

[0044] 1212 Second base material layer

[0045] 122 adhesive layer

[0046] 122A Contact

[0047] 122B Peripheral Department

[0048] 4 Semiconductor Wafers

[0049] 5 Chip for chip bonding

[0050] 41 Semiconductor Chip

[0051] 111 Film adhesive

[0052] 6 Adhesive

[0053] 7 Bonding wires

[0054] 8. Encapsulation resin

[0055] 61 Adhesive

[0056] 606 substrate

[0057] 607 Bonding Wire

[0058] 611 Adhesive layer

[0059] 641 Semiconductor Chip DETAILED DESCRIPTION

[0060] The present invention will be described in detail below with reference to embodiments, but the present invention is not limited to these embodiments.

[0061] [Implementation Method 1]

[0062] (Dicing Die Bonding Film 1)

[0063] like Figure 1 As shown, the dicing die-bonding film 1 is formed in a roll shape.

[0064] The dicing die bonding film 1 includes a cover film 13 and dicing sheet integrated adhesive films 71a, 71b, 71c, ..., 71m (hereinafter collectively referred to as "dicing sheet integrated adhesive film 71") arranged on the cover film 13. The distance between the dicing sheet integrated adhesive film 71a and the dicing sheet integrated adhesive film 71b, the distance between the dicing sheet integrated adhesive film 71b and the dicing sheet integrated adhesive film 71c, ..., the distance between the dicing sheet integrated adhesive film 71l and the dicing sheet integrated adhesive film 71m is constant.

[0065] like Figure 2 As shown, the cutting sheet integrated adhesive film 71 includes a cutting sheet 12 and an adhesive film 11 disposed on the cutting sheet 12. The cutting sheet 12 includes a base layer 121 and an adhesive layer 122 disposed on the base layer 121. The base layer 121 is defined by a first surface 121a in contact with the adhesive layer 122 and a second surface 121b facing the first surface 121a. The adhesive film 11 is defined by a first main surface 11a in contact with the adhesive layer 122 and a second main surface 11b facing the first main surface 11a. The second main surface 11b is in contact with the cover film 13.

[0066] The surface resistance value of the second surface 121b is 1.0×10 11 Ω / sq. or less, preferably 8.0×10 10 Ω / sq. or less. Since it is 1.0×10 11 Ω / sq. or less, so that peeling failure of the cover film 13 can be prevented. The lower limit of the surface resistance value of the second surface 121b is, for example, 1.0×10 5 Ω / sq.、1.0×10 7 Ω / sq.、1.0×10 8 Ω / sq., etc.

[0067] The glossiness of the second surface 121b is preferably 1-20.

[0068] The surface resistance of the second main surface 11b is 1.0×10 12 Ω / sq. or more, preferably 1.0×10 14 Ω / sq. or more. Since it is 1.0×10 12 Ω / sq. or more, so that leakage current during packaging can be prevented, and electrostatic damage to the semiconductor chip can be prevented. The upper limit of the surface resistance value of the second main surface 11b is, for example, 1.0×10 17 Ω / sq.、1.0×10 18 Ω / sq., etc.

[0069] The elongation at break of the dicing sheet 12 is preferably 500% or more. When it is 500% or more, the expandability is good. The haze of the dicing sheet 12 is preferably 45% to 95%.

[0070] The thickness of the base material layer 121 is preferably 50 μm to 150 μm.

[0071] The substrate layer 121 includes a first substrate layer 1211 having a first surface 121a. The first substrate layer 1211 can be defined by two surfaces, namely, the first surface 121a and a hidden surface facing the first surface 121a. The substrate layer 121 further includes a second substrate layer 1212 having a second surface 121b. The second substrate layer 1212 is in contact with the hidden surface of the first substrate layer 1211.

[0072] The first substrate layer 1211 includes a resin. Examples of the resin include polyethylene, polypropylene, and ethylene-vinyl acetate copolymer (EVA). Polyethylene, polypropylene, and ethylene-vinyl acetate copolymer are preferred because they exhibit good expandability. Polyethylene terephthalate is not preferred because of its poor expandability.

[0073] When the first base layer 1211 contains a conductive component, the conductive component may scatter in the device during cutting. Therefore, it is preferred that the first base layer 1211 does not contain a conductive component.

[0074] The thickness of the first base layer 1211 is preferably 30 μm to 150 μm.

[0075] The second base material layer 1212 preferably contains a conductive component because the conductive component reduces the surface resistance value of the second surface 121 b.

[0076] As the conductive component, organic conductive components, inorganic conductive components, etc. can be cited. Organic conductive components are preferred because they are not easily detached and can be easily mixed with resins. As the organic conductive component, conductive polymers can be cited.

[0077] The second substrate layer 1212 preferably contains a resin. Examples of the resin include polyethylene, polypropylene, and ethylene-vinyl acetate copolymers. Polyethylene, polypropylene, and ethylene-vinyl acetate copolymers are preferred because they are easily mixed with organic conductive components and exhibit good expansibility. Polyethylene terephthalate is not preferred because of its poor expansibility.

[0078] The thickness of the second base layer 1212 is preferably 1 μm to 30 μm.

[0079] The ratio of the thickness of the first base layer 1211 to the thickness of the second base layer 1212 (the thickness of the first base layer 1211 / the thickness of the second base layer 1212 ) is preferably 1-30.

[0080] The adhesive layer 122 includes a contact portion 122A in contact with the adhesive film 11. The adhesive layer 122 further includes a peripheral portion 122B disposed around the contact portion 122A. The contact portion 122A is cured by radiation. On the other hand, the peripheral portion 122B has a property of being cured by radiation. As the radiation, ultraviolet rays are preferred.

[0081] The adhesive layer 122 is formed by an adhesive and has adhesiveness. As such an adhesive, there is no particular limitation and it can be appropriately selected from known adhesives. Specifically, as an adhesive, for example, an adhesive having the characteristics described can be appropriately selected from the following: acrylic adhesives, rubber adhesives, vinyl alkyl ether adhesives, silicone adhesives, polyester adhesives, polyamide adhesives, polyurethane adhesives, fluorine adhesives, styrene-diene block copolymer adhesives, creep property improved adhesives such as hot melt resins with a melting point of about 200°C or less are mixed in these adhesives (for example, see Japanese Patent Publication No. 56-61468, Japanese Patent Publication No. 61-174857, Japanese Patent Publication No. 63-17981, Japanese Patent Publication No. 56-13040, etc.). In addition, as an adhesive, a radiation curing adhesive (or energy ray curing adhesive) and a thermal expansion adhesive can also be used. The adhesive can be used alone or in combination of two or more.

[0082] As the adhesive, acrylic adhesives and rubber adhesives can be suitably used, and acrylic adhesives are particularly suitable. As the acrylic adhesive, acrylic adhesives using acrylic polymers (homopolymers or copolymers) using one or more (meth) alkyl esters as monomer components as base polymers can be cited.

[0083] Examples of the alkyl (meth)acrylate in the acrylic adhesive include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, isopropyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, octyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, isodecyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate, tridecyl (meth)acrylate, tetradecyl (meth)acrylate, pentadecyl (meth)acrylate, hexadecyl (meth)acrylate, heptadecyl (meth)acrylate, octadecyl (meth)acrylate, nonadecyl (meth)acrylate, eicosyl (meth)acrylate, and the like. The alkyl (meth)acrylate is preferably one in which the alkyl group has a carbon number of 4 to 18. The alkyl group of the alkyl (meth)acrylate may be a linear chain or a branched chain.

[0084] In addition, in order to improve cohesion, heat resistance, crosslinking, etc., the acrylic polymer may contain units corresponding to other monomer components (copolymerizable monomer components) copolymerizable with the (meth) alkyl acrylate as needed. Examples of such copolymerizable monomer components include: carboxyl group-containing monomers such as (meth) acrylic acid (acrylic acid, methacrylic acid), carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; acid anhydride group-containing monomers such as maleic anhydride and itaconic anhydride; hydroxyethyl (meth) acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxyhexyl (meth) acrylate, hydroxyoctyl (meth) acrylate, hydroxydecyl (meth) acrylate, hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl methacrylate; styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylacrylate Sulfonic acid, (meth)acrylamide propanesulfonic acid, (meth)acrylic acid sulfopropyl ester, (meth)acryloyloxy naphthalenesulfonic acid and other sulfonic acid group-containing monomers; 2-hydroxyethyl acryloyl phosphate and other phosphoric acid group-containing monomers; (meth)acrylamide, N,N-dimethyl (meth)acrylamide, N-butyl (meth)acrylamide, N-hydroxymethyl (meth)acrylamide, N-methylol propane (meth)acrylamide and other (N-substituted) amide monomers; (meth)acrylic acid aminoalkyl ester monomers such as (meth)acrylic acid aminoethyl ester, (meth)acrylic acid N,N-dimethylaminoethyl ester, (meth)acrylic acid tert-butylaminoethyl ester; (meth)acrylic acid methoxyethyl ester, ... (Meth) acrylic acid alkoxyalkyl ester monomers such as ethoxyethyl acrylate; cyanoacrylate monomers such as acrylonitrile and methacrylonitrile; epoxy-containing acrylic monomers such as glycidyl (meth) acrylate; styrene monomers such as styrene and α-methylstyrene; vinyl ester monomers such as vinyl acetate and vinyl propionate; olefin monomers such as isoprene, butadiene, and isobutylene; vinyl ether monomers such as vinyl ether; N-vinyl pyrrolidone, methyl vinyl pyrrolidone, vinyl pyridine, vinyl piperidone, vinyl pyrimidine, vinyl piperazine, vinyl pyrazine, vinyl pyrrole, vinyl imidazole, vinyl oxazole, vinyl morpholine, N-vinyl carboxylic acid amides, N-vinyl Nitrogen-containing monomers such as alkenyl caprolactam; maleimide monomers such as N-cyclohexylmaleimide, N-isopropylmaleimide, N-laurylmaleimide, and N-phenylmaleimide; itaconimide monomers such as N-methylitaconimide, N-ethylitaconimide, N-butylitaconimide, N-octylitaconimide, N-2-ethylhexylitaconimide, N-cyclohexylitaconimide, and N-laurylitaconimide; succinimide monomers such as N-(meth)acryloyloxymethylenesuccinimide, N-(meth)acryloyl-6-oxyhexamethylenesuccinimide, and N-(meth)acryloyl-8-oxyoctamethylenesuccinimide;Diol acrylate monomers such as polyethylene glycol (meth)acrylate, polypropylene glycol (meth)acrylate, methoxyethylene glycol (meth)acrylate, and methoxypolypropylene glycol (meth)acrylate; acrylate monomers having heterocyclic rings, halogen atoms, silicon atoms, etc. such as tetrahydrofurfuryl (meth)acrylate, fluoro(meth)acrylate, and silicone (meth)acrylate; polyfunctional monomers such as hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy acrylate, polyester acrylate, urethane acrylate, divinylbenzene, butyl di(meth)acrylate, and hexyl di(meth)acrylate. These copolymerizable monomer components can be used alone or in combination.

[0085] When a radiation-curable adhesive (or energy-ray-curable adhesive) is used as an adhesive, as a radiation-curable adhesive (composition), for example, there can be listed: an intrinsic radiation-curable adhesive using a polymer having a radical-reactive carbon-carbon double bond in a polymer side chain or main chain or at the end of the main chain as a base polymer, a radiation-curable adhesive in which an ultraviolet-curable monomer component and an oligomer component are mixed in the adhesive, etc. In addition, when a heat-expandable adhesive is used as an adhesive, as a heat-expandable adhesive, for example, a heat-expandable adhesive containing an adhesive and a foaming agent (particularly heat-expandable microspheres) can be listed.

[0086] A preferred monomer component is 2-ethylhexyl acrylate. The acrylic adhesive preferably comprises an acrylic polymer having a urethane bond.

[0087] The adhesive layer 122 may contain various additives (eg, tackifying resins, colorants, tackifiers, extenders, fillers, plasticizers, antioxidants, antioxidants, surfactants, cross-linking agents, etc.).

[0088] The adhesive layer 122 can be formed, for example, by the following conventional method: an adhesive (pressure-sensitive adhesive) is mixed with a solvent, other additives, etc. as required to form a sheet-like layer. Specifically, the adhesive layer 122 can be formed, for example, by the following methods: a method of coating a mixture containing an adhesive and a solvent, other additives as required on the substrate layer 121, a method of coating the mixture on a suitable separator (release paper, etc.) to form the adhesive layer 122 and transferring (transferring) it to the substrate layer 121.

[0089] The thickness of the adhesive layer 122 is preferably 3 μm or more, and more preferably 5 μm or more. The thickness of the adhesive layer 122 is preferably 50 μm or less, and more preferably 30 μm or less. The adhesive layer 122 may be formed in a multi-layered shape.

[0090] (Adhesive film 11)

[0091] The adhesive film 11 has thermosetting properties.

[0092] The adhesive strength of the adhesive film 11 at 25° C. is preferably 0.2 N to 3.0 N. When it is 0.2 N to 3.0 N, the pickup property is good.

[0093] The loss modulus G" of the adhesive film 11 at 120°C is preferably 2 KPa to 20 KPa. If it is above 2 KPa, the protrusion of the adhesive film 11 during chip bonding can be prevented. If it is below 20 KPa, the wettability of the adhesive film 11 to the adherend is good during chip bonding.

[0094] The adhesive film 11 contains a resin component. Examples of the resin component include thermoplastic resins and thermosetting resins.

[0095] Preferably the thermoplastic resin is an acrylic resin.

[0096] The acrylic resin is not particularly limited, and examples thereof include polymers (acrylic copolymers) containing as components one or more of acrylic acid or methacrylic acid esters having a linear or branched alkyl group with a carbon number of 30 or less, particularly 4 to 18 carbon atoms. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, tert-butyl, isobutyl, amyl, isopentyl, hexyl, heptyl, cyclohexyl, 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl, and dodecyl.

[0097] In addition, other monomers forming the polymer (acrylic copolymer) are not particularly limited, and examples thereof include: carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, or crotonic acid, various acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, and 1,1-dihydroxybutyl (meth)acrylate. Various hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxylauryl (meth)acrylate or (4-hydroxymethylcyclohexyl)methyl acrylate, various sulfonic acid group-containing monomers such as styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamidepropanesulfonic acid, sulfopropyl (meth)acrylate or (meth)acryloyloxynaphthalenesulfonic acid, or various phosphoric acid group-containing monomers such as 2-hydroxyethylacryloyl phosphate.

[0098] Among acrylic resins, the weight average molecular weight is preferably 100,000 or more, more preferably 300,000 to 3,000,000, and further preferably 500,000 to 2,000,000. This is because, if it is within this numerical range, the adhesion and heat resistance are excellent. It should be noted that the weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated by polystyrene conversion.

[0099] The acrylic resin preferably contains a functional group. Examples of the functional group include a hydroxyl group, a carboxyl group, and a nitrile group. Among them, a nitrile group is preferred.

[0100] The content of the thermoplastic resin in 100% by weight of the resin component is preferably 10% by weight or more, more preferably 20% by weight or more. If it is 10% by weight or more, flexibility is good. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 80% by weight or less, more preferably 70% by weight or less.

[0101] Examples of the thermosetting resin include epoxy resins and phenol resins.

[0102] The epoxy resin is not particularly limited, and for example, bifunctional epoxy resins such as bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenol ethane type, or multifunctional epoxy resins, or hydantoin type, triglycidyl isocyanurate type, or glycidylamine type epoxy resins can be used. Among these epoxy resins, novolac type epoxy resins, biphenyl type epoxy resins, trihydroxyphenylmethane type resins, or tetraphenol ethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with phenolic resins as curing agents and have excellent heat resistance.

[0103] The epoxy equivalent of the epoxy resin is preferably 100 g / eq. or more, and more preferably 120 g / eq. or more. The epoxy equivalent of the epoxy resin is preferably 1000 g / eq. or less, and more preferably 500 g / eq. or less.

[0104] In addition, the epoxy equivalent of an epoxy resin can be measured by the method prescribed|regulated in JIS K 7236-2009.

[0105] Phenolic resin plays the role of curing agent of epoxy resin, for example, can be listed: phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, nonylphenol novolac resin and other novolac type phenolic resin, resol type phenolic resin, polyoxystyrene such as polyoxystyrene, etc. Among these phenolic resins, phenol novolac resin and phenol aralkyl resin are particularly preferred. This is because the connection reliability of semiconductor devices can be improved.

[0106] The hydroxyl equivalent of the phenolic resin is preferably 150 g / eq. or more, more preferably 200 g / eq. or more. The hydroxyl equivalent of the phenolic resin is preferably 500 g / eq. or less, more preferably 300 g / eq. or less.

[0107] The mixing ratio of the epoxy resin and the phenolic resin is preferably such that the hydroxyl group in the phenolic resin is 0.5 to 2.0 equivalents relative to 1 equivalent of the epoxy group in the epoxy resin component. More preferably, it is 0.8 to 1.2 equivalents. That is, if the mixing ratio of the two is not within this range, sufficient curing reaction will not be carried out, and the properties of the cured product will be easily deteriorated.

[0108] The total content of epoxy resin and phenol resin in 100 wt % of the resin component is preferably 20 wt % or more, more preferably 30 wt % or more, and the total content of epoxy resin and phenol resin is preferably 90 wt % or less, more preferably 80 wt % or less.

[0109] It is preferred that the adhesive film 11 contains an inorganic filler.

[0110] Examples of the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, lead, tin, zinc, palladium, solder, carbon, etc. Among them, silica, alumina, silver, etc. are preferred, and silica is more preferred.

[0111] The average particle size of the inorganic filler is preferably 0.001 μm to 1 μm. The average particle size of the filler can be measured by the following method.

[0112] Determination of average particle size of inorganic fillers

[0113] The adhesive film 11 was placed in a crucible and calcined at 700° C. for 2 hours in air atmosphere to be ashed. The obtained ash was dispersed in pure water and ultrasonically treated for 10 minutes, and the average particle size was determined using a laser diffraction scattering particle size distribution analyzer (manufactured by Beckman Coulter, Inc., “LS 13 320”; wet method).

[0114] The content of the inorganic filler in the adhesive film 11 is preferably 0 wt % or more, more preferably 1 wt % or more, further preferably 3 wt % or more, and further preferably 20 wt % or more. The content of the inorganic filler in the adhesive film 11 is preferably 85 wt % or less, more preferably 20 wt % or less, and further preferably 15 wt % or less.

[0115] The adhesive film 11 may appropriately contain compounding agents commonly used in film production, such as a silane coupling agent, a curing accelerator, a crosslinking agent, and the like, in addition to the aforementioned components.

[0116] When the adhesive film 11 contains a conductive component, the conductive component may scatter in the device during cutting. The conductive component may also promote corrosion of the lead wire. Therefore, it is preferred that the adhesive film 11 does not contain a conductive component.

[0117] The adhesive film 11 can be produced by a common method, for example, by preparing an adhesive composition solution containing the above-mentioned components, applying the adhesive composition solution on a substrate separator to a predetermined thickness to form a coating film, and then drying the coating film.

[0118] The solvent used in the adhesive composition solution is not particularly limited, and preferably an organic solvent that can uniformly dissolve, mix or disperse the above-mentioned components. For example, ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, cyclohexanone, toluene, xylene, etc. can be listed. There is no particular limitation on the coating method. As a method for solvent coating, for example, a die coater, a gravure coater, a roll coater, a reverse coater, a comma coater, a pipe doctor coater, screen printing, etc. can be listed. Among them, from the perspective of high uniformity of coating thickness, a die coater is preferred.

[0119] As the substrate separator, polyethylene terephthalate (PET), polyethylene, polypropylene, plastic film, paper, etc. coated with a fluorine-based release agent, a long-chain alkyl acrylate release agent, etc. can be used. As the coating method of the adhesive composition solution, for example, roller coating, screen coating, gravure coating, etc. can be listed. In addition, there is no particular limitation on the drying conditions of the coating film, for example, the drying temperature can be 70 to 160°C and the drying time can be 1 to 5 minutes.

[0120] As a method for producing the adhesive film 11, for example, a method of mixing the above-mentioned components with a mixer and press-molding the obtained mixture to produce the adhesive film 11 is also suitable. Examples of the mixer include a planetary mixer and the like.

[0121] The thickness of the adhesive film 11 is preferably 2 μm or more, more preferably 5 μm or more, and further preferably 10 μm or more. The thickness of the adhesive film 11 is preferably 200 μm or less, more preferably 150 μm or less, and further preferably 100 μm or less.

[0122] The adhesive film 11 is used for manufacturing a semiconductor device. Specifically, the adhesive film 11 is used for die bonding.

[0123] (Cover film 13)

[0124] Examples of the cover film 13 include polyethylene terephthalate (PET) films, etc. The cover film 13 is preferably a polyethylene terephthalate film subjected to a release treatment.

[0125] The thickness of the cover film 13 is preferably 20 μm to 75 μm, and more preferably 25 μm to 50 μm.

[0126] (Method for manufacturing semiconductor device)

[0127] like Figure 3 As shown, the semiconductor wafer 4 is pressure-bonded to the dicing sheet integrated adhesive film 71. Examples of the semiconductor wafer 4 include silicon wafers, silicon carbide wafers, and compound semiconductor wafers. Examples of compound semiconductor wafers include gallium nitride wafers.

[0128] As a pressure-bonding method, a method of pressing with a pressing means such as a pressure-bonding roller, etc. can be cited, for example.

[0129] The pressing temperature (pasting temperature) is preferably 35°C or higher, more preferably 37°C or higher. The upper limit of the pressing temperature is preferably lower, preferably 50°C or lower, more preferably 45°C or lower. By pressing at a low temperature, the thermal influence on the semiconductor wafer 4 can be prevented, and the warping of the semiconductor wafer 4 can be suppressed. In addition, the pressure is preferably 1×10 5 Pa~1×107 Pa, more preferably 2×10 5 Pa~8×10 6 Pa.

[0130] like Figure 4 As shown, a chip 5 for chip bonding is formed by cutting a semiconductor wafer 4. The chip 5 for chip bonding includes a semiconductor chip 41 and a film-like adhesive 111 arranged on the semiconductor chip 41. The semiconductor chip 41 includes an electrode pad. As the material of the electrode pad, aluminum and the like can be listed. In this process, a cutting method called full cutting, which cuts in until the cutting piece integrated adhesive film 71, can be adopted. There is no particular limitation as to the cutting device, and an existing known device can be used. In addition, since the semiconductor wafer 4 is bonded and fixed by the cutting piece integrated adhesive film 71, chip defects and chip splashing can be suppressed, and damage to the semiconductor wafer 4 can also be suppressed.

[0131] Pick up the die bonding chip 5. The picking up method is not particularly limited, and various conventionally known methods can be used. For example, a method in which each semiconductor chip 41 is lifted up from the dicing sheet integrated adhesive film 71 side with a needle and then the die bonding chip 5 is picked up by a picking up device can be cited.

[0132] like Figure 5 As shown, the adherend 2 with a semiconductor chip is obtained by crimping the chip 5 for chip bonding to the adherend 6. The adherend 2 with a semiconductor chip includes an adherend 6, a film-like adhesive 111 arranged on the adherend 6, and a semiconductor chip 41 arranged on the film-like adhesive 111. The adherend 6 has a terminal portion. Examples of the adherend 6 include: a lead frame, an interposer, a TAB film, a semiconductor chip, and the like. When the adherend is a lead frame, the terminal portion may be an internal lead.

[0133] The temperature at which the die-bonding chip 5 is pressed against the adherend 6 (hereinafter referred to as "die attaching temperature") is preferably 80°C or higher, more preferably 90°C or higher. The die attaching temperature is preferably 150°C or lower, more preferably 130°C or lower.

[0134] The adherend 2 with the semiconductor chip is heated under pressure to cure the film adhesive 111. Thus, the semiconductor chip 41 is fixed to the adherend 6. By curing the film adhesive 111 under pressure, the gap between the film adhesive 111 and the adherend 6 can be eliminated, and the contact area between the film adhesive 111 and the adherend 6 can be ensured.

[0135] As a method of heating under pressure, for example, there is a method of heating the adherend 2 with a semiconductor chip arranged in a chamber filled with an inert gas. The pressure of the pressurized atmosphere is preferably 0.5 kg / cm 2 (4.9×10 -2 MPa) or more, more preferably 1 kg / cm 2 (9.8×10 -2 MPa) or more, more preferably 5 kg / cm 2 (4.9×10 - 1 MPa) or above. If 0.5kg / cm 2 The pressure of the pressurized atmosphere is preferably 20 kg / cm 2 (1.96MPa) or less, more preferably 18kg / cm 2 (1.77MPa) or less, more preferably 15kg / cm 2 (1.47MPa) or less. If 20kg / cm 2 Then, it is possible to suppress the protrusion of the film-like adhesive 111 due to excessive pressurization.

[0136] The heating temperature is preferably 80°C or higher, more preferably 120°C or higher, further preferably 150°C or higher, and particularly preferably 170°C or higher. If it is 80°C or higher, the film-like adhesive 111 can be made to have a moderate hardness, and voids can be effectively eliminated by pressurized curing. The heating temperature is preferably 260°C or lower, more preferably 200°C or lower, and more preferably 180°C or lower. If it is 260°C or lower, decomposition of the film-like adhesive 111 can be prevented.

[0137] The heating time is preferably 0.1 hours or longer, more preferably 0.2 hours or longer, preferably 24 hours or shorter, more preferably 3 hours or shorter, further preferably 1 hour or shorter, and particularly preferably 30 minutes or shorter.

[0138] like Figure 6 As shown in FIG. 1 , a wire bonding step is performed to electrically connect the electrode pad of the semiconductor chip 41 and the terminal portion of the adherend 6 with the bonding wire 7. Examples of the material of the bonding wire 7 include copper and the like.

[0139] The wire bonding process includes a step of bonding one end of the bonding wire 7 to the electrode pad of the semiconductor chip 41 , a step of bonding the other end of the bonding wire 7 to the terminal portion of the adherend 6 , and the like.

[0140] After the wire bonding process is performed, a packaging process is performed to package the semiconductor chip 41 with the packaging resin 8. This process is performed to protect the semiconductor chip 41 mounted on the adherend 6 and the bonding wire 7. This process is performed by molding the resin for packaging with a mold. As the packaging resin 8, for example, an epoxy resin is used. The heating temperature during resin packaging is preferably 165°C or more, more preferably 170°C or more, and the heating temperature is preferably 185°C or less, more preferably 180°C or less.

[0141] If necessary, heating may be further performed after encapsulation (post-curing step). In this way, the encapsulating resin 8 that is insufficiently cured in the encapsulation step can be completely cured. The heating temperature can be appropriately set.

[0142] The semiconductor device obtained by the above method includes an adherend 6, an adhesive layer disposed on the adherend 6, and a semiconductor chip 41 disposed on the adhesive layer. The adhesive layer is formed by curing the film adhesive 111. The semiconductor device further includes a sealing resin 8 covering the semiconductor chip 41.

[0143] As described above, the method for manufacturing a semiconductor device includes the following steps: a step of preparing a dicing die bonding film 1; a step of pressing a semiconductor wafer 4 to an adhesive film 11 of a dicing sheet integrated adhesive film 71; a step of forming a die bonding chip 5 by performing chip division after the step of pressing the semiconductor wafer 4 to the adhesive film 11; and a step of pressing the die bonding chip 5 to an adherend 6. The method for manufacturing a semiconductor device also includes a step of: after the step of pressing the die bonding chip 5 to the adherend 6, a step of bonding one end of a bonding wire 7 to an electrode pad of a semiconductor chip 41 and a step of bonding the other end of the bonding wire 7 to a terminal portion of the adherend 6. The method for manufacturing a semiconductor device also includes a step of encapsulating the semiconductor chip 41 with an encapsulation resin 8.

[0144] The step of pressure-bonding the semiconductor wafer 4 to the adhesive film 11 includes a step of peeling the dicing sheet-integrated adhesive film 71 from the cover film 13 .

[0145] (Variant 1)

[0146] The contact portion 122A of the adhesive layer 122 has a property of being cured by radiation. The peripheral portion 122B of the adhesive layer 122 also has a property of being cured by radiation. In the method for manufacturing a semiconductor device, the die bonding chip 5 is formed, ultraviolet rays are irradiated to the adhesive layer 122, and the die bonding chip 5 is picked up. As a result, since the adhesive force of the adhesive layer 122 to the die bonding chip 5 is reduced, the die bonding chip 5 can be easily picked up.

[0147] (Variant 2)

[0148] The contact portion 122A of the adhesive layer 122 is cured by the radiation. The peripheral portion 122B of the adhesive layer 122 is also cured by the radiation.

[0149] (Variant 3)

[0150] The adhesive film 11 has a multilayer shape including a first layer and a second layer disposed on the first layer.

[0151] (Variant 4)

[0152] like Figure 7 As shown, the entire adhesive surface of the dicing sheet 12 is in contact with the adhesive film 11. The adhesive layer 122 preferably has a property of being cured by radiation. In the method for manufacturing a semiconductor device, a die bonding chip 5 is formed, ultraviolet rays are irradiated to the adhesive layer 122, and the die bonding chip 5 is picked up. As a result, since the adhesive force of the adhesive layer 122 to the die bonding chip 5 is reduced, the die bonding chip 5 can be easily picked up.

[0153] (Variant 5)

[0154] The base material layer 121 is in a single-layer shape.

[0155] (Variant 6)

[0156] The process of forming the die bonding chip 5 includes a stage of dividing the semiconductor wafer 4 arranged on the dicing sheet integrated adhesive film 71 by expansion. For example, the process of forming the die bonding chip 5 includes a step of forming a fragile layer inside the semiconductor wafer 4 by irradiating the semiconductor wafer 4 arranged on the dicing sheet integrated adhesive film 71 with laser. In this case, the process of forming the die bonding chip 5 also includes a step of expanding after the step of forming the fragile layer. The adhesive film 11 and the semiconductor wafer 4 are divided at the same time by expansion.

[0157] (Variant 7)

[0158] like Figure 8As shown, the method for manufacturing a semiconductor device includes the following steps: a step of pressing a semiconductor wafer 4 to an adhesive film 11; a step of forming a chip 5 for chip bonding by chip division after the step of pressing the semiconductor wafer 4 to the adhesive film 11; and a step of pressing the chip 5 for chip bonding to an adherend 61. Specifically, the step of pressing the chip 5 for chip bonding to the adherend 61 is a step of pressing the chip 5 for chip bonding to the semiconductor chip 641 of the adherend 61. The adherend 61 includes a substrate 606, a semiconductor chip 641, and a bonding wire 607 connecting the semiconductor chip 641 and the substrate 606. More specifically, the adherend 61 includes a substrate 606, an adhesive layer 611 disposed on the substrate 606, a semiconductor chip 641 disposed on the adhesive layer 611, and a bonding wire 607 connecting the semiconductor chip 641 and the substrate 606. The bonding wire 607 has a portion buried in the film-like adhesive 111.

[0159] (Variant 8)

[0160] like Fig. 9 As shown, the step of press-bonding the die-bonding chip 5 to the adherend 61 is a step of press-bonding the die-bonding chip 5 to the substrate 606 of the adherend 61. The bonding wire 607 includes both ends buried in the film-like adhesive 111.

[0161] (Other Modifications)

[0162] Modifications 1 to 8 and the like can be combined arbitrarily.

[0163] Example

[0164] The present invention will be described in detail below using examples, but the present invention is not limited to the following examples without departing from the gist of the present invention.

[0165] [1. Production of dicing sheet integrated adhesive film]

[0166] Cutting piece integrated adhesive films A to E were prepared. Fig.10 As shown, the dicing sheet integrated adhesive films A to E include a dicing sheet 9 and an adhesive film 3 disposed on the dicing sheet 9. The dicing sheet 9 includes a substrate 91 and an adhesive layer 92 disposed on the substrate 91. The substrate 91 includes a first substrate 911 and a second substrate 912 disposed on the first substrate 911. The second substrate 912 includes a second surface 912b. The adhesive film A includes a second main surface 3b.

[0167] (1) Preparation of adhesive film

[0168] The components used to prepare the adhesive film are described.

[0169] Acrylic resin: Teisan Resin WS023-EK30 manufactured by Nagase ChemteX Corporation (acrylate copolymer having hydroxyl groups and carboxyl groups, Mw: 500,000, glass transition temperature: -10°C)

[0170] Epoxy resin 1: jER1001 manufactured by Mitsubishi Chemical Corporation (solid epoxy resin, epoxy equivalent 450 g / eq. to 500 g / eq.)

[0171] Epoxy resin 2: jER828 manufactured by Mitsubishi Chemical Corporation (liquid epoxy resin, epoxy equivalent 180 g / eq.)

[0172] Phenolic resin 1: MEH-7851 manufactured by Meiwa Chemicals Co., Ltd. (phenolic resin, hydroxyl equivalent 201 to 220 g / eq.)

[0173] Spherical silica: SO-25R manufactured by Admatechs Co., Ltd. (spherical silica with an average particle size of 0.5 μm)

[0174] Conductive polymer: WED-S manufactured by Soken Chemical Co., Ltd.

[0175] Each component was dissolved in methyl ethyl ketone according to the mixing ratio described in Table 1 to prepare an adhesive composition solution with a solid content concentration of 20 wt%. The adhesive composition solution was applied to a 50 μm thick separator (PET film subjected to silicone release treatment) and dried in an oven at 130°C for 2 minutes to prepare adhesive films A to C with a thickness of 20 μm.

[0176] [Table 1]

[0177] (Adhesive film)

[0178]

[0179] (2) Preparation of Adhesive Layer

[0180] Next, 100 parts of 2-ethylhexyl acrylate (hereinafter referred to as "2EHA"), 10 parts of 2-hydroxyethyl acrylate (hereinafter referred to as "HEA"), 0.3 parts of benzoyl peroxide and 80 parts of toluene were added to a reaction container equipped with a condenser, a nitrogen inlet pipe, a thermometer and a stirring device, and polymerization treatment was carried out at 60°C for 8 hours in a nitrogen stream to obtain an acrylic polymer A. 5 parts of 2-methacryloyloxyethyl isocyanate (hereinafter referred to as "MOI") were added to the acrylic polymer A, and an addition reaction treatment was carried out at 50°C for 50 hours in an air stream to obtain an acrylic polymer A'.

[0181] Next, 5 parts of a polyisocyanate compound (trade name "CORONATEL", manufactured by Nippon Polyurethane Co., Ltd.) and 5 parts of a photopolymerization initiator (trade name "IRGACURE 184", manufactured by Ciba Specialty Chemicals Inc.) were added to 100 parts of the acrylic polymer A' to prepare an adhesive solution. The adhesive solution was applied to the silicone-treated surface of a PET release liner and dried by heating at 120° C. for 2 minutes to form an adhesive layer with a thickness of 30 μm.

[0182] (3) Preparation of Dicing Sheet Integrated Adhesive Film A in Example 1

[0183] The first substrate 911 is a substrate made of polypropylene with a thickness of 50 μm. The second substrate 912 is a substrate containing 20 parts by weight of WED-S manufactured by Soken Chemical Co., Ltd. per 100 parts by weight of polyethylene. The thickness of the second substrate 912 is 30 μm.

[0184] The adhesive layer was bonded to the first substrate 911 and stored at 23°C for 72 hours. An ultraviolet irradiation device (UM-810 manufactured by Nitto Seiki Co., Ltd.) was used to irradiate the "region of the adhesive layer where the semiconductor wafer is mounted" through the substrate 91 with 500 mJ / cm 2 of ultraviolet rays, thereby forming a cut sheet 9.

[0185] The adhesive film A and the dicing sheet 9 were bonded together using a hand roller to obtain a dicing sheet-integrated adhesive film A.

[0186] (4) Preparation of Dicing Sheet Integrated Adhesive Film B in Example 2

[0187] The first substrate 911 is a polypropylene substrate having a thickness of 80 μm. The second substrate 912 is a substrate containing 20 parts by weight of PA-200 (conductive polymer) manufactured by T&K TOKA Co., Ltd. with respect to 100 parts by weight of ethylene-vinyl acetate copolymer. The thickness of the second substrate 912 is 10 μm.

[0188] The adhesive layer was bonded to the first substrate 911 and stored at 23°C for 72 hours. An ultraviolet irradiation device (UM-810 manufactured by Nitto Seiki Co., Ltd.) was used to irradiate the "region of the adhesive layer where the semiconductor wafer is mounted" through the substrate 91 with 500 mJ / cm 2 of ultraviolet rays, thereby forming a cut sheet 9.

[0189] The adhesive film B and the dicing sheet 9 were bonded together using a hand roller, thereby obtaining an adhesive film B integrated with a dicing sheet.

[0190] (5) Preparation of the Dicing Sheet Integrated Adhesive Film C in Example 3

[0191] The first substrate 911 is a substrate made of ethylene-vinyl acetate copolymer with a thickness of 50 μm. The second substrate 912 is a substrate containing 30 parts by weight of PA-200 manufactured by T&K TOKA Co., Ltd. per 100 parts by weight of polyethylene. The thickness of the second substrate 912 is 30 μm.

[0192] The adhesive layer was bonded to the first substrate 911 and stored at 23°C for 72 hours. An ultraviolet irradiation device (UM-810 manufactured by Nitto Seiki Co., Ltd.) was used to irradiate the "region of the adhesive layer where the semiconductor wafer is mounted" through the substrate 91 with 500 mJ / cm 2 of ultraviolet rays, thereby forming a cut sheet 9.

[0193] The adhesive film A and the dicing sheet 9 were bonded together using a hand roller to obtain a dicing sheet-integrated adhesive film C.

[0194] (6) Preparation of Dicing Sheet Integrated Adhesive Film D in Comparative Example 1

[0195] The first substrate 911 is a substrate made of polypropylene with a thickness of 50 μm, and the second substrate 912 is a substrate made of polyethylene with a thickness of 30 μm.

[0196] The adhesive layer was bonded to the first substrate 911 and stored at 23°C for 72 hours. An ultraviolet irradiation device (UM-810 manufactured by Nitto Seiki Co., Ltd.) was used to irradiate the "region of the adhesive layer where the semiconductor wafer is mounted" through the substrate 91 with 500 mJ / cm 2 of ultraviolet rays, thereby forming a cut sheet 9.

[0197] The adhesive film C and the dicing sheet 9 were bonded together using a hand roller, thereby obtaining a dicing sheet-integrated adhesive film D.

[0198] (7) Preparation of Dicing Sheet-Integrated Adhesive Film E in Comparative Example 2

[0199] The first substrate 911 is a substrate containing 20 parts by weight of WED-S manufactured by Soken Chemical Co., Ltd. per 100 parts by weight of polyethylene. The thickness of the first substrate 911 is 50 μm. The second substrate 912 is a substrate made of polypropylene with a thickness of 30 μm.

[0200] The adhesive layer was bonded to the first substrate 911 and stored at 23°C for 72 hours. An ultraviolet irradiation device (UM-810 manufactured by Nitto Seiki Co., Ltd.) was used to irradiate the "region of the adhesive layer where the semiconductor wafer is mounted" through the substrate 91 with 500 mJ / cm 2 of ultraviolet rays, thereby forming a cut sheet 9.

[0201] The adhesive film A and the dicing sheet 9 were bonded together using a hand roller, thereby obtaining a dicing sheet-integrated adhesive film E.

[0202] [2. Evaluation]

[0203] The following evaluations were performed on the dicing sheet-integrated adhesive films A to E. The results are shown in Table 2.

[0204] (1) Surface resistance value of the second surface 912b

[0205] The ultra-high resistance measurement sample box TR-42 of the ultra-high resistance meter TR-8601 manufactured by Advantest Corporation was used. After the dicing sheet integrated adhesive film was left to stand for 2 hours in an atmosphere of 23±2°C and 50±5%, a voltage of 500V was applied to the second surface 912b in this environment, and the value was read 1 minute after the application began. The surface resistance value was calculated from the value obtained by dividing the applied voltage by the surface current.

[0206] (2) Elongation at break

[0207] A strip sample with an initial length of 120 mm and a width of 10 mm was cut out from the cut sheet 9, and a tensile test was performed with a chuck spacing of 50 mm and a tensile speed of 300 mm / min to measure the change in elongation (mm) of the sample. As a tensile tester, Autograph AG-IS manufactured by Shimadzu Corporation was used, and as a load sensor, PFG-50NA manufactured by Shimadzu Corporation was used.

[0208] (3) Cover film peeling test

[0209] 200 sheets of dicing sheet integrated adhesive films were attached to the cover film and rolled into a roll, and a wafer bonding test was performed using a wafer mounting device MA-3000III (manufactured by Nitto Seiki Co., Ltd.). The cover films were peeled off from 10 dicing sheet integrated adhesive films, and the case where all the cover films were successfully peeled off from the 10 dicing sheet integrated adhesive films was judged as ○, and the case where more than one sheet could not be peeled off was judged as ×.

[0210] (4) Scattering after cutting

[0211] On the dicing sheet integrated adhesive film, a 12-inch, 500 μm thick mirror wafer is bonded at a speed of 10 mm / sec at 60°C using a wafer mounting device (MA-3000III, manufactured by Nitto Seiki Co., Ltd.). Then, a dicing device (DFD6361, manufactured by DISCO Corporation) is used to cut the chip into a chip size of 10 mm×10 mm (single cut, blade height 90 μm, speed 50 mm / sec). Use SEM to analyze whether there is a conductive component attached to the chip. The case where the conductive component is not attached to the chip is judged as ○, and the case where the conductive component is attached to the chip is judged as ×.

[0212] (5) Surface resistance value of the second main surface 3 b

[0213] The ultra-high resistance measurement sample box TR-42 of the ultra-high resistance meter TR-8601 manufactured by Advantest Corporation was used. After the dicing sheet integrated adhesive film was left to stand for 2 hours in an atmosphere of 23±2°C and 50±5%, a voltage of 500V was applied to the second main surface 3b in this environment, and the value was read 1 minute after the application began. The surface resistance value was calculated from the value obtained by dividing the applied voltage by the surface current.

[0214] (6) Adhesion strength

[0215] A probe with a diameter of 5.0 mm was pressed against the adhesive film at 25° C., under a pressure of 100 gf for 1 second, and the load when the probe was separated from the adhesive film at a test speed of 120 mm / min was measured.

[0216] [Table 2]

[0217]

Claims

1. A dicing die-bonding film formed in a roll shape, comprising: Covering film, and a dicing sheet integrated adhesive film disposed on the cover film, The cutting sheet integrated adhesive film comprises: A cutting sheet comprising a base layer having two surfaces defined by a first surface and a second surface facing the first surface, and an adhesive layer in contact with the first surface; and an adhesive film having two surfaces defined by a first main surface in contact with the adhesive layer and a second main surface facing the first main surface, The adhesive film does not contain any conductive component. The surface resistance of the second surface is 1.0×10 11 Ω / sq. or less, the surface resistance value of the second main surface is 1.0×10 12 Ω / sq. or more and 1.0×10 17 Ω / sq. or less, The base layer includes a first base layer having the first surface and a second base layer having the second surface. The second substrate layer contains a conductive component, The first base layer does not contain a conductive component.

2. The dicing die-bonding film according to claim 1, wherein The second substrate layer has a thickness of 1 μm to 30 μm.

3. The dicing die-bonding film according to claim 1, wherein The conductive component of the second base layer is an organic conductive component.

4. The dicing die-bonding film according to claim 1, wherein The second base layer further includes one or more resins selected from the group consisting of polyethylene, polypropylene, and ethylene-vinyl acetate copolymers.

5. The dicing die-bonding film according to claim 1, wherein The breaking elongation of the cutting blade is more than 500%. 6 . The dicing die-bonding film according to claim 1 , wherein The adhesive film comprises: epoxy resin or phenolic resin; and acrylic resin, The adhesive film has an adhesive strength of 0.2 N or more and 3.0 N or less at 25° C.

7. The dicing die-bonding film according to claim 1, wherein The covering film is a polyethylene terephthalate film, The thickness of the covering film is 20 μm to 75 μm.

8. A method for manufacturing a semiconductor device, comprising the following steps: A step of preparing the dicing die-bonding film according to any one of claims 1 to 7; A step of pressing a semiconductor wafer onto the adhesive film of the dicing sheet integrated adhesive film; After the step of pressure-bonding the semiconductor wafer to the adhesive film, a step of performing chip division to form a chip for die bonding including a semiconductor chip and a film-like adhesive disposed on the semiconductor chip; and The step of press-bonding the die-bonding chip to an adherend, The step of pressure-bonding the semiconductor wafer to the adhesive film includes the step of peeling the dicing sheet-integrated adhesive film from the cover film.

9. A semiconductor device obtained by the manufacturing method according to claim 8.

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