Temperature pressure compensation method for improving output precision of embedded pressure sensor

A pressure sensor, temperature and pressure technology, applied in the sensor field of micro-electromechanical systems, can solve problems such as limiting the effect of digital compensation, and achieve the effect of improving output accuracy and realizing data communication

CN106895929AActive Publication Date: 2017-06-27慧石(上海)测控科技有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2017-06-27

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Abstract

The invention provides a temperature pressure compensation method for improving output precision of an embedded pressure sensor. The method is characterized in that a pressure signal of the pressure sensor and bridge resistance change are acquired by employing a sensor signal processing chip, and pressure output is converted into a multiterm expression based on temperature pressure; multiterm fitting based on the least square method for different temperature pressures is carried out through a host computer, and a multiterm expression coefficient is calculated. The method is advantaged in that fitting calculation of multiple temperature points and multiple pressure points can be flexibly realized, in practice, temperature points and pressure points can be effectively set according to experiences based on a piezoresistive pressure sensor to acquire more effective fitting.
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Description

technical field

[0001] The invention relates to the technical field of sensors of micro-electromechanical systems, in particular to a compensation method for piezoresistive pressure sensors. Background technique

[0002] Micro-Electro-Mechanical System, also known as MEMS (Micro-Electro-Mechanical-System), is an advanced technology for mass-manufacturing miniature high-performance devices, such as pressure sensors and accelerometers. MEMS pressure sensors mainly include piezoresistive pressure sensors and capacitive pressure sensors. Among them, the piezoresistive pressure sensor is the most widely used MEMS device.

[0003] The piezoresistive pressure sensor relies on a pressure film to sense the pressure of the external medium. Through microfabrication technology, piezoresistive elements can be fabricated on the pressure film, and these piezoresistive elements are characterized by their resistance value being very sensitive to stress. When external pressure is applied, ...

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Embodiment Construction

[0022] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific illustrations.

[0023] see figure 1 , figure 2 with image 3 , figure 1 Shown is a silicon piezoresistive bridge, a set voltage is applied between terminals 1 and 3 to power the bridge, and terminals 3 and 4 are the voltage signal output of the silicon piezoresistive bridge (corresponding to pressure changes); figure 2 Shown is the connection between the bridge output and the PGA900 chip. image 3 It is based on the circuit composition of the PGA900 chip, the main function is to realize the sampling output voltage value from the bridge, and figure 1 The voltage at both ends of R10 (corresponding to the temperature change of the bridge) is sampled inside the chip, calculated by polynomials, and then output the voltage value corresponding to the applied pre...