Temperature regulating device and wafer vacuum heating device

Abstract

The present application relates to wafer heating technology field, provide a kind of temperature regulating device and wafer vacuum heating device.Therein, temperature regulating device includes multiple angle-adjustable reflector, is installed in the heat transfer path between wafer and the heating unit for heating the wafer, for adjusting the heat radiation of the heating unit to each piece of the wafer.The temperature regulating device of the present application, reflector can reflect the heat or light emitted by heating unit to different positions.Thereby, when the wafer temperature in vacuum shell is not uniform due to assembly error or machining error and the like, the problem of wafer temperature non-uniformity can be solved by adjusting the angle of reflector without changing the internal layout of wafer vacuum heating device.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of wafer heating technology, in particular to a temperature adjusting device and a wafer vacuum heating device. BACKGROUND

[0002] Wafer heating is often involved in various fields. For example, in semiconductor and solar cell devices, wafers are often heated for process needs. There are many methods for heating wafers, mainly including resistance wire heating, high-frequency induction heating and infrared lamp heating. Among them, resistance wire heating, also known as radiation heating, is relatively difficult to adjust temperature uniformity, and has slow temperature rise and fall. High-frequency induction heating is fast and easy to realize automatic control, but has high cost and is easy to affect other devices due to high-frequency magnetic field during work. Infrared lamp heating can realize fast temperature rise and fall, but there are the following problems in heating wafers by infrared lamps:

[0003] During installation, the heating infrared lamps are not in the same plane due to assembly errors. The distance from the infrared lamps to the wafer has a direct relationship with the temperature uniformity of the wafer during heating. If the distances from the infrared lamps to the wafer are inconsistent, the temperature on the surface of the wafer will be inconsistent, thereby affecting the final process effect.

[0004] In addition, during installation of the infrared lamps, the distances from the infrared lamps to the wafer are inconsistent due to machining errors and assembly precision of the vacuum chamber upper cover and the infrared lamps themselves, thereby affecting the uniformity of the wafer surface temperature.

[0005] In addition, the length of the infrared lamp is relatively long, and the heating temperature of each section will be different, which will directly affect the heating uniformity of the wafer. The inconsistent heating of each infrared lamp has uncertainty, and only the specific value of the heating non-uniformity of the infrared lamp can be determined during debugging. Before heating, the vacuum chamber must be evacuated. If the distance between the lamp and the wafer needs to be adjusted, the vacuum must be broken, the upper cover of the vacuum chamber is opened, and the temperature uniformity is tested after adjustment. If it does not meet the requirements, the above steps need to be repeated, which reduces the maintenance efficiency. In addition, in order to ensure the temperature uniformity of the wafer, it is very complex to adjust the layout of the heating lamp or reprocess the parts under the condition that the heating lamp has been fixed.

[0006] In the prior art, when controlling the temperature uniformity of the infrared lamp heating, the output power of each infrared lamp is mainly controlled to realize temperature uniformity control. However, the temperature non-uniformity caused by temperature non-uniformity at different positions of the same infrared lamp and assembly errors is difficult to realize by adjusting the power of each lamp. SUMMARY

[0007] The present application aims to at least solve one of the problems in the prior art or related art.

[0008] One of the purposes of the present application is to provide a temperature adjusting device and wafer vacuum heating device to solve the problem of uneven wafer temperature in the prior art when heating the wafer.

[0009] In order to achieve the purpose, the present application provides a temperature adjusting device, comprising a plurality of angle-adjustable reflection plates, which are installed on the heat transfer path between the wafer and the heating unit for heating the wafer, and are used to adjust the heat radiated by the heating unit to each wafer.

[0010] Preferably, the temperature adjusting device further comprises an angle adjuster; the reflection plates are rotatable around a set axis, and the number of reflection plates along the set axis is multiple, including at least one first reflection plate connected to the angle adjuster.

[0011] Preferably, the reflection plates further comprise a second reflection plate; the first reflection plate and the second reflection plate are respectively provided with protrusions that cooperate with each other, so that after the first reflection plate rotates around the set axis by a set angle relative to the second reflection plate, the protrusions on the first reflection plate and the protrusions on the second reflection plate are in contact, and the rotation of the first reflection plate drives the rotation of the second reflection plate.

[0012] Preferably, the angle adjuster is an adjusting hand wheel, and the adjusting hand wheel is provided with a scale for displaying the adjusting angle of the adjusting hand wheel.

[0013] Preferably, both sides of the reflection plate have a reflective coating.

[0014] The present application also provides a wafer vacuum heating device, comprising a vacuum shell, the inside of which is provided with a wafer and a heating unit, and further comprising the above-mentioned temperature adjusting device.

[0015] Preferably, the vacuum shell comprises a cover body and a shell body, the heating unit and the reflection plates are fixed on the cover body, and the wafer is fixed on the shell body.

[0016] Preferably, the wafer vacuum heating device further comprises a temperature sensor for measuring and displaying the temperature data of each wafer.

[0017] Preferably, the wafer vacuum heating device further comprises a mounting plate, and the wafers are uniformly distributed on the mounting plate.

[0018] Preferably, when the temperature adjusting device comprises an angle adjuster, at least one of the reflection plates is connected to the angle adjuster through a magnetic coupling, the magnetic coupling comprising an inner magnet inside the vacuum shell and an outer magnet outside the vacuum shell, the inner magnet being connected to the reflection plate and the outer magnet being connected to the angle adjuster.

[0019] The temperature adjusting device has the following advantages: the reflection plates can reflect the heat or light emitted by the heating unit to different positions, so that when the wafer temperature in the vacuum shell is uneven due to assembly errors or machining errors, the wafer temperature unevenness can be solved by adjusting the angle of the reflection plates without changing the internal layout of the wafer vacuum heating device. BRIEF DESCRIPTION OF DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0021] Figure 1 is a structural schematic diagram of a wafer vacuum heating device in the embodiment;

[0022] Figure 2 is a structural schematic diagram of a wafer vacuum heating device in the embodiment; Figure 1 is a sectional view at A-A in the embodiment;

[0023] Figure 3 is a sectional view at A-A in the embodiment; Figure 2 is a sectional view at A-A in the embodiment;

[0024] Figure 4 is a structural schematic diagram of a first adjusting plate in the embodiment;

[0025] Figure 5 is a structural schematic diagram of a second adjusting plate in the embodiment;

[0026] Figure 6 is a structural schematic diagram of a first adjusting plate and a second adjusting plate in the embodiment;

[0027] In the figure: 1, shell body; 2, cover body; 3, heating unit; 4, mounting plate; 5, wafer; 6, first reflection plate; 7A, inner magnet; 7B, outer magnet; 8, temperature sensor; 9, transmission roller; 10, second reflection plate; 11, adjusting scale; 12, angle adjuster; 13, first protrusion; 14, second protrusion. DETAILED DESCRIPTION

[0028] In order to more clearly understand the above-mentioned purposes, features and advantages of the present application, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0029] In the description of the present application, it should be noted that the orientations or positional relationships indicated by the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third" are only for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0030] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "connected", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium. For those skilled in the art, the specific meaning of the above-mentioned terms in the present application can be understood according to the specific circumstances.

[0031] The temperature adjusting device of the present embodiment includes a plurality of angle-adjustable reflection plates installed on the heat transfer path between the wafer and the heating unit for heating the wafer, for adjusting the heat radiated by the heating unit to each wafer.

[0032] The temperature adjusting device of the present embodiment can reflect the heat or light emitted by the heating unit to different positions. Therefore, when the wafer temperature in the vacuum housing is not uniform due to assembly errors or machining errors, etc., the problem of non-uniform wafer temperature can be solved by adjusting the angle of the reflection plate without changing the internal layout of the wafer vacuum heating device.

[0033] The present embodiment will now be described as an example of a wafer vacuum heating device, without loss of generality, the temperature adjusting device of the present embodiment can be applied not only to wafer vacuum heating devices, but also to other occasions with wafers and heating units.

[0034] Please refer to Figure 1 and Figure 2The temperature adjusting device of the embodiment is installed on a wafer vacuum heating device. The wafer vacuum heating device comprises a vacuum shell, and a plurality of wafers 5 and a heating unit 3 for heating the wafers 5 are arranged in the vacuum shell. The temperature adjusting device comprises a plurality of reflecting plates, which are arranged in the vacuum shell and installed on the heat transfer path between the wafers 5 and the heating unit 3, so that the heat radiated by the heating unit to each wafer can be adjusted by adjusting the angle of the reflecting plates.

[0035] The temperature adjusting device of the embodiment can reflect the heat or light emitted by the heating unit 3 to different positions. Therefore, when the temperature of the wafers 5 in the vacuum shell is not uniform due to assembly errors or machining errors, etc., the problem of non-uniform temperature of the wafers 5 can be solved by adjusting the angle of the reflecting plates without changing the internal layout of the wafer vacuum heating device.

[0036] Further, the temperature adjusting device of the embodiment comprises an angle adjuster 12. By providing the angle adjuster 12, the angle of the reflecting plates can be adjusted conveniently. Of course, even if the angle adjuster 12 is not provided, the angle of the reflecting plates can be adjusted directly.

[0037] In the embodiment, the reflecting plates can rotate around a set axis, and the number of the reflecting plates along the set axis is multiple, including at least a first reflecting plate 6 connected to the angle adjuster 12. Therefore, the angle of the first reflecting plate 6 can be adjusted directly by the angle adjuster 12, and the temperature of a specific wafer can be adjusted.

[0038] Further, the reflecting plates further comprise a second reflecting plate 10; the first reflecting plate 6 and the second reflecting plate 10 are respectively provided with protrusions matched with each other, so that after the first reflecting plate 6 rotates around the set axis relative to the second reflecting plate 10 by a set angle, the protrusions on the first reflecting plate 6 and the protrusions on the second reflecting plate 10 are in contact, and the first reflecting plate 6 rotates while driving the second reflecting plate 10 to rotate.

[0039] The structure of the first reflecting plate 6 and the second reflecting plate 10 can be seen from Figure 4 and Figure 5 of course, the drawings do not constitute a limitation on the embodiment. For example, the first reflecting plate 6 and the second reflecting plate 10 can also adopt shapes such as circular, elliptical, square, or even special-shaped.

[0040] When the reflecting plates comprise the first reflecting plate 6 and the second reflecting plate 10, the cooperation principle between the first reflecting plate 6 and the second reflecting plate 10 can be seen from Figure 6Specifically, the angle of the first reflector 6 can be adjusted using an angle adjuster. Furthermore, when the first reflector 6 is rotated to the point where "the first protrusion on the first reflector 6 contacts the second protrusion on the second reflector 10", the angle adjuster can indirectly adjust the angle of the second reflector 10 through the first reflector 6.

[0041] For example, rotating the first reflector 6 forward by a set angle causes the first protrusion 13 of the first reflector 6 to contact the second protrusion 14 of the second reflector 10. At this point, the angle adjuster can be further adjusted to adjust the angle of the second reflector 10. Based on this, rotating the first reflector 6 in the opposite direction allows the angle of the first reflector 6 to be adjusted independently.

[0042] The above "positive direction" can be either clockwise or counterclockwise, and can be flexibly designed according to the specific work situation.

[0043] The angle adjuster 12 can be a handwheel, knob, or other similar device; its specific structure is not limited as long as it allows for adjustment of the reflector angle. Furthermore, for ease of adjustment, a scale 11 can be provided for easy identification, allowing the current reflector angle to be known. The scale 11 also records the position of each reflector segment after each adjustment, providing a reference for future adjustments.

[0044] In this embodiment, it is preferred, but not necessary, to provide reflective coatings on both sides of the reflector so that when the heat or light from the heating unit 3 shines on either side of the reflector, it will be reflected as completely as possible by the reflector.

[0045] For example, when the heating unit 3 in this embodiment is an infrared lamp, the light emitted by the infrared lamp will not be absorbed when it shines on the reflector. Furthermore, because both sides of the reflector have reflective coatings, the reflector maintains optimal reflection regardless of its rotation angle.

[0046] Furthermore, this embodiment provides a wafer vacuum heating device, including a vacuum housing, inside which a wafer and a heating unit are disposed, and also includes the aforementioned temperature regulating device.

[0047] pass Figure 1 It was discovered that there are multiple heating units 3 installed inside the vacuum shell, and along... Figure 1 The distribution is in the left-right direction. Combined with... Figure 2 It has been found that the heating unit 3 in this embodiment is preferably, but not necessarily, a U-shaped infrared heating unit 3. Of course, the accompanying drawings do not constitute a limitation on this application, and any heating unit 3 that can be used to heat the chip 5 is included within the protection scope of this application.

[0048] passFigure 1 and Figure 2 It is also found that the vacuum housing comprises a cover 2 and a housing body 1. Of course, the structure of the vacuum housing in the drawings does not constitute a limitation to the present embodiment, as long as it can provide a vacuum environment for the components inside the vacuum housing.

[0049] In which, the heating unit 3 and the reflecting plate are fixed on the cover 2, and the wafer 5 is fixed on the housing body 1. Of course, the fixing mode of the heating unit 3, the reflecting plate and the wafer 5 in the vacuum housing is not limited by the examples here.

[0050] It is preferred that the reflecting plate and the wafer 5 are respectively located on both sides of the heating unit 3. Of course, the reflecting plate and the wafer 5 can also be located on the same side of the heating unit 3, as long as the condition "the reflecting plate is located on the transmission path between the wafer and the heating unit" is met.

[0051] In order to measure the temperature of the wafer 5, the wafer vacuum heating device can comprise a temperature sensor 8.

[0052] And, in order to install the wafer 5, a mounting plate 4 is arranged in the vacuum housing, so as to uniformly distribute the wafer 5 on the mounting plate 4. In the case of arranging the mounting plate 4 in the vacuum housing, the temperature sensor 8 can be installed at the bottom of the mounting plate 4, thereby facilitating the temperature measurement of the wafer 5. Of course, the type and installation mode of the temperature sensor 8 are not limited, as long as the actual temperature of the wafer 5 can be measured.

[0053] In which, the reflecting plate is generally perpendicular to the mounting plate 4. When the heating unit 3 is an infrared lamp tube, the reflecting plate will not reflect the light of the infrared lamp tube at this time. Once the temperature of each wafer 5 in the vacuum housing is found to be uneven, the angle of the reflecting plate can be adjusted to ensure that the temperature of each wafer 5 in the vacuum housing is uniform.

[0054] In which, the mounting plate 4 can be installed on a transmission roller 9, so that the mounting plate 4 enters and exits the vacuum housing through the transmission roller 9. When the mounting plate 4 enters the vacuum housing and reaches the specified position, the vacuumization process inside the vacuum housing can be started. After the vacuum degree in the vacuum housing reaches the set value, the infrared lamp tube starts to heat the wafer 5 on the mounting plate 4. During this process, the temperature sensor 8 can monitor the temperature of each wafer 5.

[0055] Due to the uniformity of the heating temperature of the infrared lamp tube itself and the assembly error generated during assembly, the temperature of each wafer 5 will be different. At this time, the angle of the reflecting plate is adjusted so that the reflecting plate reflects the infrared rays emitted by the infrared lamp tube, which can change the total amount of infrared rays irradiated on each wafer 5, thereby adjusting the temperature of the corresponding wafer 5.

[0056] When the temperature adjusting device of the present embodiment is installed on the wafer vacuum heating device described above, in order to facilitate the connection between the angle adjuster and the reflecting plate while ensuring the vacuum property of the vacuum housing, it is preferred that the angle adjuster and the reflecting plate are connected through a magnetic coupling.

[0057] Specifically, the angle adjuster 12 is located outside the vacuum housing, the magnetic coupling includes an outer magnet 7B and an inner magnet 7A, the outer magnet 7B is connected to the angle adjuster 12, and the inner magnet 7A is connected to the reflecting plate. Please refer to Figure 3 .

[0058] Figure 3 In the present embodiment, the inner magnet 7A and the outer magnet 7B are both fixed through the vacuum housing, of course, which does not constitute a limitation to the present embodiment.

[0059] In this case, the angle adjuster arranged outside the vacuum housing can facilitate the adjustment of the angle of the reflecting plate inside the vacuum housing. And through the arrangement of the magnetic coupling, since it does not need to open the chamber when adjusting the temperature uniformity, the vacuum of the chamber is not damaged, thereby greatly reducing the time for maintaining the chamber and improving the work efficiency.

[0060] Of course, in addition to using the magnetic coupling to connect the angle adjuster 12 and the reflecting plate, any other way disclosed in the prior art can also be used to connect the angle adjuster 12 and the reflecting plate. For example, the angle adjuster 12 and the reflecting plate can also be connected through a magnetic fluid seal. However, in this case, a hole needs to be opened on the vacuum housing, thereby increasing the complexity of the equipment, and the working temperature of the magnetic fluid cannot be too high, a cooling device needs to be added, thereby leading to a substantial increase in cost.

[0061] In the present embodiment, please refer to Figure 2 , the reflecting plate includes a first reflecting plate 6 directly connected with the magnetic coupling, and a second reflecting plate 10 indirectly connected with the magnetic coupling through the first reflecting plate 6. Among them, the adjustment of the first reflecting plate 6 can be directly adjusted by controlling the magnetic coupling. And for the second reflecting plate 10, the second reflecting plate 10 can be indirectly controlled through the first reflecting plate 6 by controlling the magnetic coupling.

[0062] In the initial state, the first reflecting plate 6 and the second reflecting plate 10 are both perpendicular to the cover 2 of the vacuum housing, at this time, the first reflecting plate 6 and the second reflecting plate 10 are in a non-working state. When the wafers 5 are heated and stabilized, the temperature of each wafer 5 is measured and displayed through the temperature sensor 8. On this basis, the angle of the reflecting plate can be adjusted based on the measurement result of the temperature sensor 8, so that the wafer 5 with a temperature lower than the set temperature value receives more heat, and the wafer 5 with a temperature higher than the set temperature value receives less heat.

[0063] If the wafer 5 whose temperature is not equal to the set temperature value corresponds to the second reflecting plate 10: the hand wheel can be rotated clockwise by a first set angle, so that the first reflecting plate 6 and the second reflecting plate 10 are locked. On this basis, the hand wheel is continuously rotated to adjust the angle of the second reflecting plate 10, until the temperature of the corresponding wafer 5 reaches the set temperature value, at which time the angle value of the current second reflecting plate 10 is recorded through the scale 11, thereby providing a basis for the next adjustment. The first set angle can be set according to the working condition.

[0064] If the wafer 5 whose temperature is not equal to the set temperature value corresponds to the first reflecting plate 6: the first reflecting plate 6 and the second reflecting plate 10 do not need to be locked, and the hand wheel can be directly rotated clockwise in the case that the first reflecting plate 6 and the second reflecting plate 10 are separated, and in the process of rotating the hand wheel, the temperature change of the current wafer 5 is observed, until the temperature of the wafer 5 reaches the set temperature value.

[0065] If there is a difference in the temperature of the wafer 5 at the same reflecting plate, the second reflecting plate 10 is adjusted according to the above method, and after the temperature is uniform, the second reflecting plate 10 is rotated counterclockwise, at which time the second reflecting plate 10 and the first reflecting plate 6 are completely separated. When the first reflecting plate 6 is rotated, the second reflecting plate 10 will not rotate with it.

[0066] Of course, the conditions of locking and separating between the first reflecting plate 6 and the second reflecting plate 10 above are not fixed. For example, the first reflecting plate 6 can be locked with the second reflecting plate 10 in the process of rotating counterclockwise, and the first reflecting plate 6 can be separated from the second reflecting plate 10 in the process of rotating clockwise.

[0067] Figure 2 In the embodiment, between the two magnetic couplings, there are two first reflecting plates 6 directly connected with the magnetic couplings, and between the two first reflecting plates 6, there are two second reflecting plates 10. Of course, the drawings do not constitute a limitation on the embodiments, for example, the number of second reflecting plates 10 is not necessarily the same as the number of first reflecting plates 6. For example, one first reflecting plate 6 can be connected through one magnetic coupling, and multiple second reflecting plates 10 can be connected through the first reflecting plate 6. Or, there can be no second reflecting plate 10, and all the reflecting plates are directly connected with the angle adjuster 12.

[0068] The above embodiments are only used to illustrate the present application, but not to limit the present application. Although the present application is described in detail with reference to the embodiments, those skilled in the art should understand that various combinations, modifications or equivalent replacements of the technical solutions of the present application do not deviate from the spirit and scope of the present application, and should be covered in the scope of claims of the present application.

Claims

1. A temperature regulating device, characterized in that, The temperature regulating device comprises a plurality of angle-adjustable reflecting plates installed on the heat transfer path between the wafer and the heating unit for adjusting the heat radiated by the heating unit to each piece of the wafer. The temperature regulating device further comprises an angle adjuster; the reflecting plates are rotatable around a set axis, and the number of the reflecting plates along the set axis is a plurality, including at least one first reflecting plate connected to the angle adjuster. The reflecting plates further comprise second reflecting plates. The first reflecting plates and the second reflecting plates are respectively provided with protrusions matched with each other, so that after the first reflecting plates are rotated around the set axis relative to the second reflecting plates by a set angle, the protrusions on the first reflecting plates and the protrusions on the second reflecting plates are in contact, and the rotation of the first reflecting plates drives the rotation of the second reflecting plates. The angle adjuster is an adjusting hand wheel, which is provided with a scale for displaying the adjusting angle of the adjusting hand wheel.

2. The temperature regulating device of claim 1, wherein, Both sides of the reflecting plates are provided with reflective coatings.

3. A wafer vacuum heating apparatus comprising a vacuum housing, inside which a wafer and a heating unit are provided, characterized by, The temperature regulating device of any one of claims 1 to 2 is further included.

4. The wafer vacuum heating apparatus of claim 3, wherein The vacuum housing comprises a cover and a housing body, the heating unit and the reflecting plates are fixed on the cover, and the wafer is fixed on the housing body.

5. The wafer vacuum heating apparatus of claim 3, wherein The wafer vacuum heating device further comprises a temperature sensor for measuring the temperature data of each piece of the wafer and displaying.

6. The wafer vacuum heating apparatus of claim 3, wherein The wafer vacuum heating device further comprises a mounting plate, and the wafers are uniformly distributed on the mounting plate.

7. The wafer vacuum heating apparatus of claim 3, wherein When the temperature regulating device comprises an angle adjuster, at least one of the reflecting plates is connected to the angle adjuster through a magnetic coupling, the magnetic coupling comprises an inner magnet located in the vacuum housing and an outer magnet located outside the vacuum housing, the inner magnet is connected to the reflecting plate, and the outer magnet is connected to the angle adjuster.

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