Method for preparing optoelectronic device on any substrate and optoelectronic device

Abstract

The present invention discloses a method for preparing a photoelectric device on an arbitrary substrate and a photoelectric device. The method for preparing a photoelectric device on an arbitrary substrate uses a spraying method, which is not limited by the size and shape of the substrate, and can prepare perovskite components on a large scale. Mask plates of different sizes and shapes are used to prepare perovskite battery components in different places, such as buildings, vehicles, etc. According to the shape of the substrate, such as plane, wave, irregular, bend, etc., the battery component can be prepared in series, parallel, and a combination of series and parallel. Make full use of limited space and use clean energy to the maximum extent. The method for preparing a photoelectric device on an arbitrary substrate provided by the present invention uses a spraying method to form a perovskite battery component. The spraying method is not limited by the size and shape of the substrate, and can prepare perovskite components on a large scale, expand the scope of application, and promote system integration.

Description

Technical Field

[0001] The present invention particularly relates to a method for preparing a photoelectric device on an arbitrary substrate and the photoelectric device, belonging to the technical field of solar cells. Background Art

[0002] Energy is an important material basis for the survival and development of human society. Its improvement and replacement have greatly promoted the development of human society. As a renewable and clean energy, solar energy is not only easy to develop and utilize, but also has the advantages of not being restricted by geographical environment. In recent years, the use of solar cells to convert solar energy into electricity required by humans has received more and more attention. Organic-inorganic hybrid perovskite solar cells have attracted much attention among many new solar cells and were selected by Science as one of the top ten scientific breakthroughs in 2013.

[0003] At present, the photoelectric conversion efficiency of perovskite cells has exceeded 23%. However, the preparation processes used are mainly solution spin coating and vacuum evaporation. The cell area and substrate are limited, the material waste rate is high, the scope of application is narrow, and it cannot be applied to the preparation of large-area devices. Summary of the invention

[0004] The main purpose of the present invention is to provide a method for preparing a photoelectric device on any substrate and a photoelectric device to overcome the deficiencies in the prior art.

[0005] In order to achieve the above-mentioned invention object, the technical solution adopted by the present invention includes:

[0006] An embodiment of the present invention provides a method for preparing a photoelectric device on an arbitrary substrate, comprising:

[0007] Using a first mask plate and at least using a solution method to deposit a transparent conductive layer on an arbitrary substrate;

[0008] Using a first mask plate, and at least spraying the transparent conductive layer to form a first transmission layer;

[0009] Using a second mask plate, and at least using a spraying method to form a photoelectric conversion layer on the first transmission layer;

[0010] Using a third mask plate, and at least using a spraying method to form a second transmission layer on the photoelectric conversion layer;

[0011] An electrode layer is deposited on the second transmission layer by using a fourth mask and at least a solution method.

[0012] In some more specific embodiments, the method includes: forming two or more photoelectric conversion layers that are spaced apart and distributed on the first transmission layer.

[0013] Furthermore, the method comprises: forming an insulating adhesive layer between any two photoelectric conversion layers by at least spraying.

[0014] Furthermore, the method further comprises: forming an insulating adhesive layer between the two ends of the transparent conductive layer and the electrode layer by at least spraying.

[0015] In some more specific embodiments, the method comprises:

[0016] 1) using a first mask plate and at least using a solution method to deposit a transparent conductive layer on an arbitrary substrate;

[0017] 2) using a first mask plate and at least spraying to form a first transmission layer on the transparent conductive layer, and making the fourth end of the first transmission layer cover the second end of the transparent conductive layer;

[0018] 3) using a second mask plate and at least spraying to form a photoelectric conversion layer on the first transmission layer, and making the sixth end of the perovskite layer flush with the fourth end of the first transmission layer;

[0019] 4) using a third mask plate and at least spraying to form a second transmission layer on the photoelectric conversion layer, so that the seventh end of the second transmission layer is flush with the fifth end of the photoelectric conversion layer, and the eighth end of the second transmission layer covers the sixth end of the photoelectric conversion layer and the fourth end of the first transmission layer,

[0020] 5) Using a fourth mask plate, and at least using a solution method to deposit an electrode layer on the second transmission layer, and make the tenth end of the electrode layer cover a partial area of ​​the eighth end of the second transmission layer; wherein the second end of the transparent conductive layer, the fourth end of the first transmission layer, the sixth end of the perovskite layer, the eighth end of the second transmission layer and the tenth end of the electrode layer are located at the same end.

[0021] Furthermore, the method comprises: spraying a first mask plate on the transparent conductive layer after displacing it by 0.1-10 cm to form a first transmission layer.

[0022] Furthermore, the width of the second mask plate is smaller than the width of the first mask plate.

[0023] Furthermore, the difference between the width of the second mask plate and the width of the first mask plate is 0.1-10 cm.

[0024] Furthermore, the width of the third mask plate is greater than the width of the second mask plate.

[0025] Furthermore, the width difference between the third mask plate and the second mask plate is 0.1-10 cm.

[0026] Furthermore, the method comprises: manufacturing more than two optoelectronic devices, and connecting the tenth end of the electrode layer of any optoelectronic device to the first end of the transparent conductive layer of an adjacent optoelectronic device.

[0027] Furthermore, the method further comprises: first cleaning any substrate or forming a polymer material coating on the surface of any substrate, and then forming a transparent conductive layer.

[0028] Furthermore, the material of the polymer coating includes any one of epoxy resin and acrylate, but is not limited thereto.

[0029] Furthermore, the method further comprises: making a UV-curable adhesive encapsulation layer on the electrode layer.

[0030] Furthermore, the photoelectric device is a perovskite cell, and the photoelectric conversion layer is a perovskite layer.

[0031] An embodiment of the present invention further provides a parallel-structured optoelectronic device, comprising: a transparent conductive layer, a first transmission layer, a second transmission layer and an electrode layer stacked in sequence, with two or more photoelectric conversion layers arranged at intervals between the first transmission layer and the second transmission layer.

[0032] Furthermore, there is no direct contact between the transparent conductive layer and the electrode layer.

[0033] Furthermore, an insulating adhesive layer is provided between two adjacent perovskite layers and between the two ends of the transparent conductive layer and the electrode layer.

[0034] Furthermore, the photoelectric device is a perovskite cell, and the photoelectric conversion layer is a perovskite layer.

[0035] An embodiment of the present invention also provides a photoelectric device with a series structure, comprising at least two perovskite battery cells connected in series, each of the perovskite battery cells comprising a transparent conductive layer, a first transmission layer, a photoelectric conversion layer, a second transmission layer and an electrode layer stacked in sequence, the first end of the transparent conductive layer extending out, the second end being covered by the fourth end of the first transmission layer, the fourth end of the first transmission layer and the sixth end of the photoelectric conversion layer being covered by the eighth end of the second transmission layer, and a partial area of ​​the eighth end of the second transmission layer being covered by the tenth end of the electrode layer; and the tenth end of the electrode layer of one of the two perovskite battery cells connected in series is also connected to the transparent conductive layer of the other; wherein the second end of the transparent conductive layer, the fourth end of the first transmission layer, the sixth end of the photoelectric conversion layer, the eighth end of the second transmission layer and the tenth end of the electrode layer are located at the same end.

[0036] Furthermore, the tenth end of the electrode layer of one of two adjacent perovskite battery cells is located above the transparent conductive layer of the other one.

[0037] Furthermore, the photoelectric conversion layer in the same perovskite battery unit has no direct contact with the electrode layer; the photoelectric conversion layer of one of two adjacent perovskite battery units has no direct contact with the electrode layer of the other.

[0038] Furthermore, the distance between the third end of the first transmission layer and the first end of the transparent conductive layer is 0.1-10 cm.

[0039] Furthermore, the distance between the fifth end of the photoelectric conversion layer and the third end of the first transmission layer is 0.1-10 cm.

[0040] Furthermore, the sixth end of the photoelectric conversion layer is flush with the fourth end of the first transmission layer.

[0041] Furthermore, the fifth end of the photoelectric conversion layer is flush with the seventh end of the second transmission layer.

[0042] Furthermore, the photoelectric device is a perovskite cell, and the photoelectric conversion layer is a perovskite layer.

[0043] Compared with the prior art, the method for preparing optoelectronic devices on any substrate provided by the present invention adopts a spraying method to form a perovskite battery component. The spraying method is not limited by the size and shape of the substrate, and can prepare perovskite components on a large scale, fully use the perovskite batteries in various places, and more efficiently convert light energy into electrical energy; and the spraying method is used to prepare a transparent perovskite component on a large area on any substrate. Through mask plates of different sizes, when the substrate is irregular, the perovskite component can also be prepared in blocks, and it can be used on substrates of different materials and different shapes as much as possible. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 It is a schematic structural diagram of a perovskite battery assembly in Example 1 of the present invention;

[0045] Figure 2 It is a schematic structural diagram of a perovskite battery assembly in Example 2 of the present invention;

[0046] Figure 3 It is a structural schematic diagram of a mask plate. DETAILED DESCRIPTION

[0047] In view of the deficiencies in the prior art, the inventor of this case has proposed the technical solution of the present invention after long-term research and extensive practice. The technical solution, its implementation process and principle will be further explained as follows.

[0048] The embodiment of the present invention provides 1. a method for preparing a photoelectric device on an arbitrary substrate, comprising:

[0049] Using a first mask plate and at least using a solution method to deposit a transparent conductive layer on an arbitrary substrate;

[0050] Using a first mask plate, and at least spraying the transparent conductive layer to form a first transmission layer;

[0051] Using a second mask plate, and at least using a spraying method to form a photoelectric conversion layer on the first transmission layer;

[0052] Using a third mask plate, and at least using a spraying method to form a second transmission layer on the photoelectric conversion layer;

[0053] An electrode layer is deposited on the second transmission layer by using a fourth mask and at least a solution method.

[0054] In some more specific embodiments, the method includes: forming two or more photoelectric conversion layers that are spaced apart and distributed on the first transmission layer.

[0055] Furthermore, the method comprises: forming an insulating adhesive layer between any two photoelectric conversion layers by at least spraying.

[0056] Furthermore, the method further comprises: forming an insulating adhesive layer between the two ends of the transparent conductive layer and the electrode layer by at least spraying.

[0057] In some more specific embodiments, the method comprises:

[0058] 1) using a first mask plate and at least using a solution method to deposit a transparent conductive layer on an arbitrary substrate;

[0059] 2) using a first mask plate and at least spraying to form a first transmission layer on the transparent conductive layer, and making the fourth end of the first transmission layer cover the second end of the transparent conductive layer;

[0060] 3) using a second mask plate and at least spraying to form a photoelectric conversion layer on the first transmission layer, and making the sixth end of the perovskite layer flush with the fourth end of the first transmission layer;

[0061] 4) using a third mask plate and at least spraying to form a second transmission layer on the photoelectric conversion layer, so that the seventh end of the second transmission layer is flush with the fifth end of the photoelectric conversion layer, and the eighth end of the second transmission layer covers the sixth end of the photoelectric conversion layer and the fourth end of the first transmission layer,

[0062] 5) Using a fourth mask plate, and at least using a solution method to deposit an electrode layer on the second transmission layer, and make the tenth end of the electrode layer cover a partial area of ​​the eighth end of the second transmission layer; wherein the second end of the transparent conductive layer, the fourth end of the first transmission layer, the sixth end of the perovskite layer, the eighth end of the second transmission layer and the tenth end of the electrode layer are located at the same end.

[0063] Furthermore, the method comprises: spraying a first mask plate on the transparent conductive layer after displacing it by 0.1-10 cm to form a first transmission layer.

[0064] Furthermore, the width of the second mask plate is smaller than the width of the first mask plate.

[0065] Furthermore, the difference between the width of the second mask plate and the width of the first mask plate is 0.1-10 cm.

[0066] Furthermore, the width of the third mask plate is greater than the width of the second mask plate.

[0067] Furthermore, the width difference between the third mask plate and the second mask plate is 0.1-10 cm.

[0068] Furthermore, the method comprises: manufacturing more than two optoelectronic devices, and connecting the tenth end of the electrode layer of any optoelectronic device to the first end of the transparent conductive layer of an adjacent optoelectronic device.

[0069] Furthermore, the photoelectric device is a perovskite cell, and the photoelectric conversion layer is a perovskite layer.

[0070] An embodiment of the present invention further provides a parallel-structured optoelectronic device, comprising: a transparent conductive layer, a first transmission layer, a second transmission layer and an electrode layer stacked in sequence, with two or more photoelectric conversion layers arranged at intervals between the first transmission layer and the second transmission layer.

[0071] Furthermore, there is no direct contact between the transparent conductive layer and the electrode layer.

[0072] Furthermore, an insulating adhesive layer is provided between two adjacent perovskite layers and between the two ends of the transparent conductive layer and the electrode layer.

[0073] Furthermore, the method further comprises: first cleaning any substrate or forming a polymer material coating on the surface of any substrate, and then forming a transparent conductive layer.

[0074] Furthermore, the material of the polymer coating includes any one of epoxy resin and acrylate, but is not limited thereto.

[0075] Furthermore, the method further comprises: making a UV-curable adhesive encapsulation layer on the electrode layer.

[0076] Furthermore, the photoelectric device is a perovskite cell, and the photoelectric conversion layer is a perovskite layer.

[0077] An embodiment of the present invention also provides a photoelectric device with a series structure, comprising at least two perovskite battery cells connected in series, each of the perovskite battery cells comprising a transparent conductive layer, a first transmission layer, a photoelectric conversion layer, a second transmission layer and an electrode layer stacked in sequence, the first end of the transparent conductive layer extending out, the second end being covered by the fourth end of the first transmission layer, the fourth end of the first transmission layer and the sixth end of the photoelectric conversion layer being covered by the eighth end of the second transmission layer, and a partial area of ​​the eighth end of the second transmission layer being covered by the tenth end of the electrode layer; and the tenth end of the electrode layer of one of the two perovskite battery cells connected in series is also connected to the transparent conductive layer of the other; wherein the second end of the transparent conductive layer, the fourth end of the first transmission layer, the sixth end of the photoelectric conversion layer, the eighth end of the second transmission layer and the tenth end of the electrode layer are located at the same end.

[0078] Furthermore, the tenth end of the electrode layer of one of two adjacent perovskite battery cells is located above the transparent conductive layer of the other one.

[0079] Furthermore, the photoelectric conversion layer in the same perovskite battery unit has no direct contact with the electrode layer; the photoelectric conversion layer of one of two adjacent perovskite battery units has no direct contact with the electrode layer of the other.

[0080] Furthermore, the distance between the third end of the first transmission layer and the first end of the transparent conductive layer is 0.1-10 cm.

[0081] Furthermore, the distance between the fifth end of the photoelectric conversion layer and the third end of the first transmission layer is 0.1-10 cm.

[0082] Furthermore, the sixth end of the photoelectric conversion layer is flush with the fourth end of the first transmission layer.

[0083] Furthermore, the fifth end of the photoelectric conversion layer is flush with the seventh end of the second transmission layer.

[0084] Furthermore, the photoelectric device is a perovskite cell, and the photoelectric conversion layer is a perovskite layer.

[0085] The technical solution, its implementation process and principle will be further explained below in conjunction with the accompanying drawings and specific embodiments.

[0086] Example 1

[0087] A perovskite battery assembly, comprising at least two perovskite battery units connected in series, each of the perovskite battery units comprising a transparent conductive layer 010 / 011, a first transmission layer 020 / 021, a perovskite layer 030 / 031, a second transmission layer 040 / 041 and an electrode layer 050 / 051 stacked in sequence, the two ends of the transparent conductive layer 010 / 011 being a first end and a second end respectively, the two ends of the first transmission layer 020 / 021 being a third end and a fourth end respectively, the two ends of the perovskite layer 030 / 031 being a fifth end and a sixth end respectively, the two ends of the second transmission layer 040 / 041 being a seventh end and an eighth end respectively, the two ends of the electrode layer 050 / 051 being a ninth end and a tenth end respectively ... The second end, the fourth end of the first transmission layer, the sixth end of the perovskite layer, the eighth end of the second transmission layer and the tenth end of the electrode layer are located at the same end; wherein the first end of the transparent conductive layer 010 / 011 extends out, the second end is covered by the fourth end of the first transmission layer 020 / 021, the fourth end of the first transmission layer 020 / 021 and the sixth end of the perovskite layer 030 / 031 are covered by the eighth end of the second transmission layer 040 / 041, and a partial area of ​​the eighth end of the second transmission layer 040 / 041 is covered by the tenth end of the electrode layer 050 / 051; and the tenth end of the electrode layer 050 of one of the two perovskite battery cells connected in series is also connected to the transparent conductive layer 011 of the other (for details, please refer to Figure 1 , the connection point is an extended extension area of ​​the transparent conductive layer 011), the tenth end of the electrode layer 050 of one of the two perovskite battery cells connected in series is located above the transparent conductive layer 011 of the other, and the perovskite layer and the electrode layer in the same perovskite battery cell have no direct contact; the perovskite layer 031 of one of the two perovskite battery cells connected in series has no direct contact with the electrode layer 050 of the other.

[0088] Specifically, a method for implementing a perovskite series assembly may include: using a mask plate 1 to deposit a transparent conductive layer 010 / 011 on any substrate (such as a wall, a roof, a car body, etc.) by a solution method; after displacing the mask plate 1 by 0.1-10 cm, spraying to form a first transmission layer 020 / 021; using a mask plate 2 that is 0.1-10 cm smaller than the width of the mask plate 1 to spray to form a perovskite layer 030 / 031, and aligning the fourth end of the perovskite layer 030 / 031 with the first transmission layer 020 / 021; using a mask plate 3 that is 0.1-10 cm wider than the width of the mask plate 2 to spray the perovskite layer 030 / 031 by a low temperature spray method; The second transmission layer 040 / 041 is formed by coating, and the seventh end of the second transmission layer 040 / 041 is flush with the fifth end of the perovskite layer 030 / 031; the electrode layer (or transparent electrode) 050 / 051 is prepared by solution method using mask plate 4, and the second transmission layer 040 / 041 isolates the perovskite layer 030 / 031 from the electrode layer 050 / 051, and the electrode layer 050 contacts the transparent conductive layer 011 to form a series battery, and at the same time, it is necessary to avoid the electrode layer 050 contacting the perovskite layer 031 to cause a short circuit; and the upper layer of the electrode layer can also be encapsulated with ultraviolet light curing glue to extend the service life of the perovskite battery component.

[0089] Example 2

[0090] A perovskite battery component, comprising: a bottom electrode (or transparent conductive layer) 060, a first transmission layer 070, a second transmission layer 071 and a top electrode (i.e., electrode layer, the same below) 061 are stacked in sequence, a perovskite layer 080 and a perovskite layer 081 are arranged alternately between the first transmission layer 070 and the second transmission layer 071, the perovskite layers 080 and 081 are connected to the first transmission layer 070 and the second transmission layer 071, an insulating glue layer 091 is arranged between the perovskite layer 080 and the perovskite layer 081, and insulating glue layers 090 and 091 are respectively arranged at both ends of the perovskite battery component, and the insulating glue layers 090 and 091 are located between the top electrode 061 and the bottom electrode 060.

[0091] Specifically, a method for manufacturing a perovskite parallel component comprises depositing a transparent conductive layer (i.e., the bottom electrode) 060 on any substrate by a solution method; using a mask plate 5 to spray on the transparent conductive layer to form a first transmission layer 070; using a mask plate 6 to spray on the first transmission layer 070 to form a perovskite layer 080 and a perovskite layer 081 arranged at intervals; using the mask plate 6 to spray between the perovskite layer 080 and the perovskite layer 081 to form an insulating glue layer 091; using the mask plate 5 to spray between the perovskite layer 080 and the perovskite layer 080 1 is formed by spraying, and insulating glue layers 090 and 092 are formed at the ends of the first transmission layer 070, the second transmission layer 071, the perovskite layer 080, and the perovskite layer 081 by spraying. A top electrode 061 is formed on the second transmission layer 071, the insulating glue layer 090, and the insulating glue layer 092 by a solution method. The insulating glue layers 090 and 092 are used to block the contact between the top electrode 061 and the bottom electrode 060. In addition, the upper layer of the top electrode can be encapsulated with ultraviolet light curing glue to extend the service life of the perovskite device.

[0092] This parallel structure is suitable for special curved surfaces, cornered substrates, or walls that require special decorative properties. By adjusting the area of ​​the mask and the area of ​​the 090 / 091 / 092 insulating adhesive layer, the distribution of the batteries can be adjusted, some corners can be staggered, or various orderly patterns can be formed; and, if it is not restricted by the shape of the substrate, the 090 / 091 / 092 insulating adhesive can also be removed to form a continuous and uninterrupted perovskite layer.

[0093] It should be noted that the materials of the various structural layers constituting the perovskite battery assembly in Examples 1 and 2 of the present invention can be materials known to those skilled in the art, and the thickness and other parameters of each structural layer can be determined according to the specific situation. The specific parameters and implementation methods of the spraying method and solution method can refer to the existing implementation methods and be adjusted according to the specific situation, which will not be described in detail here. The material of the mask plate used is not specifically required, and its structure can be referred to in Figure 3 As shown, you can also make adjustments according to specific circumstances.

[0094] Compared with the prior art, the method for preparing optoelectronic devices on any substrate provided by the present invention adopts a spraying method to form a perovskite battery component. The spraying method is not limited by the size and shape of the substrate, and can prepare perovskite components on a large scale, fully use the perovskite batteries in various places, and more efficiently convert light energy into electrical energy; and the spraying method is used to prepare a transparent perovskite component on a large area on any substrate. Through mask plates of different sizes, when the substrate is irregular, the perovskite component can also be prepared in blocks, and it can be used on substrates of different materials and different shapes as much as possible.

[0095] It should be understood that the above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with the technology to understand the content of the present invention and implement it accordingly, and they cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing an optoelectronic device on an arbitrary substrate, characterized in that include: 1) using a first mask plate and at least using a solution method to deposit a transparent conductive layer on an arbitrary substrate; 2) using a first mask plate, and spraying at least 0.1-10 cm on the transparent conductive layer to form a first transmission layer, and making the fourth end of the first transmission layer cover the second end of the transparent conductive layer; 3) using a second mask plate and at least spraying to form a photoelectric conversion layer on the first transmission layer, and making the sixth end of the photoelectric conversion layer flush with the fourth end of the first transmission layer; 4) using a third mask plate and at least spraying to form a second transmission layer on the photoelectric conversion layer, so that the seventh end of the second transmission layer is flush with the fifth end of the photoelectric conversion layer, and the eighth end of the second transmission layer covers the sixth end of the photoelectric conversion layer and the fourth end of the first transmission layer, 5) Using a fourth mask plate, and at least using a solution method to deposit an electrode layer on the second transmission layer, and make the tenth end of the electrode layer cover a partial area of ​​the eighth end of the second transmission layer; wherein the second end of the transparent conductive layer, the fourth end of the first transmission layer, the sixth end of the photoelectric conversion layer, the eighth end of the second transmission layer and the tenth end of the electrode layer are located at the same end, thereby forming more than two photoelectric devices, and the tenth end of the electrode layer of any photoelectric device is connected to the first end of the transparent conductive layer of the adjacent photoelectric device.

2. The method according to claim 1, characterized in that: The width of the second mask plate is smaller than the width of the first mask plate.

3. The method according to claim 2, characterized in that: The difference between the width of the second mask plate and the width of the first mask plate is 0.1-10 cm.

4. The method according to claim 2, characterized in that: The width of the third mask plate is greater than the width of the second mask plate.

5. The method according to claim 4, characterized in that: The width difference between the third mask plate and the second mask plate is 0.1-10 cm.

6. The method according to claim 1, characterized in that include: Firstly, any substrate is cleaned or a polymer material coating is formed on the surface of any substrate, and then a transparent conductive layer is formed.

7. The method according to claim 6, characterized in that: The material of the polymer coating includes any one of epoxy resin and acrylate.

8. The method according to claim 1, characterized in that: The method further comprises: making an ultraviolet light curing adhesive encapsulation layer on the electrode layer.

9. The method according to claim 1, characterized in that: The photoelectric device is a perovskite cell, and the photoelectric conversion layer is a perovskite layer.

10. A photoelectric device with a parallel structure, characterized in that include: A transparent conductive layer, a first transmission layer, a second transmission layer and an electrode layer are stacked in sequence, two or more photoelectric conversion layers are arranged at intervals between the first transmission layer and the second transmission layer, there is no direct contact between the transparent conductive layer and the electrode layer, and the first transmission layer, the second transmission layer and the photoelectric conversion layer are formed by spraying.

11. The photovoltaic device of parallel structure according to claim 10, characterized in that: An insulating adhesive layer is also arranged between two adjacent photoelectric conversion layers and between the two ends of the transparent conductive layer and the electrode layer. The insulating adhesive layer is formed by spraying.

12. The photovoltaic device of parallel structure according to claim 10, characterized in that: The photoelectric device is a perovskite cell, and the photoelectric conversion layer is a perovskite layer.

13. A photovoltaic device with a series structure, characterized in that: The invention comprises at least two perovskite battery cells connected in series, each of the perovskite battery cells comprises a transparent conductive layer, a first transmission layer, a photoelectric conversion layer, a second transmission layer and an electrode layer which are stacked in sequence, a first end of the transparent conductive layer extends out, a second end is covered by a fourth end of the first transmission layer, a fourth end of the first transmission layer and a sixth end of the photoelectric conversion layer are covered by an eighth end of the second transmission layer, and a partial area of ​​the eighth end of the second transmission layer is covered by a tenth end of the electrode layer; and the tenth end of the electrode layer of one of the two perovskite battery cells connected in series is also connected to the transparent conductive layer of the other; wherein the second end of the transparent conductive layer, the fourth end of the first transmission layer and the sixth end of the photoelectric conversion layer are covered by an eighth end of the second transmission layer, and a partial area of ​​the eighth end of the second transmission layer is covered by a tenth end of the electrode layer. The end, the sixth end of the photoelectric conversion layer, the eighth end of the second transmission layer and the tenth end of the electrode layer are located at the same end, the third end of the first transmission layer is 0.1-10cm away from the first end of the transparent conductive layer, the fifth end of the photoelectric conversion layer is 0.1-10cm away from the third end of the first transmission layer, the sixth end of the photoelectric conversion layer is flush with the fourth end of the first transmission layer, and the fifth end of the photoelectric conversion layer is flush with the seventh end of the second transmission layer, wherein the transparent conductive layer is formed by solution deposition on any substrate using a first mask plate, and the first transmission layer is formed by spraying on the transparent conductive layer using the first mask plate with a staggered position of 0.1-10cm.

14. The photovoltaic device of the tandem structure according to claim 13, characterized in that: The tenth end of the electrode layer of one of the two adjacent perovskite battery cells is located above the transparent conductive layer of the other one.

15. The photovoltaic device of the tandem structure according to claim 13, characterized in that: The photoelectric conversion layer in the same perovskite battery unit has no direct contact with the electrode layer; the photoelectric conversion layer of one of two adjacent perovskite battery units has no direct contact with the electrode layer of the other.

16. The photovoltaic device of the tandem structure according to claim 13, characterized in that: The photoelectric device is a perovskite cell, and the photoelectric conversion layer is a perovskite layer.

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