Radiation detector and radiation image capturing device

Abstract

The present invention relates to a radiation detector and a radiation image capturing apparatus. The radiation detector includes: a sensor substrate including a flexible base material and a layer provided on a first surface of the base material and formed with a plurality of pixels that accumulate charges generated corresponding to light converted from radiation; a conversion layer provided on a side opposite to the side of the layer where the pixels are formed and where the base material is provided, for converting radiation into light; and a stress neutral plane adjustment member provided on a second surface side opposite to the first surface of the base material, for adjusting the position of the stress neutral plane from the interface, which is the surface of the conversion layer facing the sensor substrate, to a predetermined range in the stacking direction P in which the sensor substrate and the conversion layer are stacked.

Description

Technical Field

[0001] The present invention relates to a radiation detector and a radiation imaging apparatus. Background Art

[0002] In the past, a radiation imaging apparatus for performing radiation imaging for medical diagnosis has been known. In such a radiation imaging apparatus, a radiation detector is used for detecting radiation that has passed through a subject and generating a radiation image.

[0003] As the radiation detector, there is a radiation detector including the following elements: a conversion layer such as a scintillator that converts radiation into light; and a sensor substrate provided with a plurality of pixels that accumulate charges corresponding to the light converted by the conversion layer. As such a radiation detector, a radiation detector using a flexible base material in the sensor substrate is known (for example, refer to JP-A-2013-217769 (Patent Document 1)). By using a flexible base material, for example, the radiation imaging apparatus (radiation detector) can be made lighter, and sometimes it becomes easier to image a subject.

[0004] In the technique described in Patent Document 1, since a flexible base material is used, a flexure adjustment member for adjusting the flexure characteristics (rigidity distribution) is provided. In the technique described in Patent Document 1, the entire device integrally formed of the radiation detector and an electrical circuit such as a control unit for reading charges from the radiation detector is flexed by the flexure adjustment member, so that stress is concentrated on a portion with low rigidity, and a reduction in impact resistance can be suppressed.

[0005] However, in the middle of the manufacturing process of the radiation imaging apparatus or the like, the radiation detector is sometimes treated as a single unit.

[0006] In a radiation imaging apparatus in which the radiation detector and the electrical circuit are arranged and disposed in a direction intersecting the lamination direction in which the conversion layer and the sensor substrate are laminated, and the flexure adjustment member is provided over the entire radiation detector and the electrical circuit, the case where the radiation detector is treated as a single unit is not considered. Therefore, when the radiation detector in the radiation imaging apparatus having the above structure is treated as a single unit, the sensor substrate may be peeled off from the conversion layer. Summary of the Invention

[0007] An object of the present disclosure is to provide a radiation detector and a radiation imaging apparatus that can suppress peeling of the sensor substrate from the conversion layer in the radiation detector as a single unit, as compared with a radiation imaging apparatus in which a flexure adjustment member is provided over the entire radiation detector and the electrical circuit, when the radiation detector and the electrical circuit are arranged and disposed in a direction intersecting the lamination direction in which the conversion layer and the sensor substrate are laminated.

[0008] To achieve the above object, the radiation detector according to the first aspect of the present disclosure includes: a sensor substrate including a flexible base material and a layer provided on the first surface of the base material and formed with a plurality of pixels that accumulate charges generated corresponding to light converted from radiation; a conversion layer provided on the side opposite to the side where the base material is provided in the layer where the pixels are formed, which converts radiation into light; and a stress neutral plane adjustment member provided on the second surface side opposite to the first surface of the base material, which adjusts the position of the stress neutral plane from the interface, which is the surface of the conversion layer facing the sensor substrate, to a predetermined range in the stacking direction in which the sensor substrate and the conversion layer are stacked.

[0009] In addition, in the radiation detector according to the second aspect of the present disclosure, based on the radiation detector according to the first aspect, the predetermined range is a range shorter than the distance between the interface and the stress neutral plane in the case where the stress neutral plane adjustment member is not provided.

[0010] In addition, in the radiation detector according to the third aspect of the present disclosure, based on the radiation detector according to the first or second aspect, the stress neutral plane adjustment member is provided at least in a region covering the region where the sensor substrate and the conversion layer face each other.

[0011] In addition, in the radiation detector according to the fourth aspect of the present disclosure, based on the radiation detector according to any one of the first to third aspects, the bending elastic modulus of the stress neutral plane adjustment member is 150 MPa or more and 2500 MPa or less.

[0012] In addition, in the radiation detector according to the fifth aspect of the present disclosure, based on the radiation detector according to any one of the first to fourth aspects, the material of the stress neutral plane adjustment member includes at least one of polycarbonate, polyethylene terephthalate, and low-density polyethylene.

[0013] In addition, in the radiation detector according to the sixth aspect of the present disclosure, based on the radiation detector according to any one of the first to fifth aspects, the ratio of the thermal expansion coefficient of the stress neutral plane adjustment member to the thermal expansion coefficient of the conversion layer is 0.5 or more and 4 or less.

[0014] In addition, in the radiation detector according to the seventh aspect of the present disclosure, based on the radiation detector according to any one of the first to sixth aspects, the thermal expansion coefficient of the stress neutral plane adjustment member is 30 ppm / K or more and 200 ppm / K or less.

[0015] In addition, in the radiation detector according to the eighth aspect of the present disclosure, based on the radiation detector according to any one of the first to seventh aspects, it further includes: an adhering layer provided at the interface and in contact with the sensor substrate and the conversion layer.

[0016] In addition, the radiation detector according to the ninth aspect of the present disclosure further includes, on the basis of the radiation detector according to any one of the first to seventh aspects: a buffer layer provided between the sensor substrate and the conversion layer to buffer the difference in the coefficient of thermal expansion between the conversion layer and the sensor substrate.

[0017] In addition, the radiation detector according to the tenth aspect of the present disclosure, on the basis of the radiation detector according to any one of the first to ninth aspects, the stress neutral plane adjustment member includes a plurality of films having different functions laminated in the stacking direction.

[0018] In addition, the radiation detector according to the eleventh aspect of the present disclosure, on the basis of the radiation detector according to the tenth aspect, the plurality of films include a stress neutral plane adjustment film and an antistatic film.

[0019] In addition, the radiation detector according to the twelfth aspect of the present disclosure, on the basis of the radiation detector according to the eleventh aspect, the antistatic film is provided closer to the second surface side than the stress neutral plane adjustment film.

[0020] In addition, the radiation detector according to the thirteenth aspect of the present disclosure, on the basis of the radiation detector according to the tenth aspect, the plurality of films include a stress neutral plane adjustment film and a moisture-proof film.

[0021] In addition, the radiation detector according to the fourteenth aspect of the present disclosure, on the basis of the radiation detector according to the thirteenth aspect, the moisture-proof film is provided closer to the second surface side than the stress neutral plane adjustment film.

[0022] In addition, the radiation detector according to the fifteenth aspect of the present disclosure, on the basis of the radiation detector according to any one of the first to fourteenth aspects, the base material is made of resin and has a fine particle layer containing inorganic fine particles with an average particle diameter of 0.05 μm or more and 2.5 μm or less.

[0023] In addition, the radiation detector according to the sixteenth aspect of the present disclosure, on the basis of the radiation detector according to the fifteenth aspect, the base material has a fine particle layer on the second surface side.

[0024] In addition, the radiation detector according to the seventeenth aspect of the present disclosure, on the basis of the radiation detector according to the fifteenth or seventeenth aspect, the fine particles contain an element having an atomic number larger than that of the element constituting the base material and an atomic number of 30 or less.

[0025] In addition, the radiation detector according to the eighteenth aspect of the present disclosure, on the basis of the radiation detector according to any one of the first to seventeenth aspects, the coefficient of thermal expansion of the base material at 300°C to 400°C is 20 ppm / K or less.

[0026] In addition, the radiation detector according to the 19th aspect of the present disclosure is based on the radiation detector according to any one of the 1st to 18th aspects, and the base material satisfies at least one of the following two conditions in a state where the thickness is 25 μm: the thermal shrinkage rate in the MD (Machine Direction, longitudinal) direction at 400 °C is 0.5% or less, and the elastic modulus at 500 °C is 1 GPa or more.

[0027] In addition, the radiation detector according to the 20th aspect of the present disclosure is based on the radiation detector according to any one of the 1st to 19th aspects, and the rigidity of the stress neutral plane adjusting member is higher than that of the base material.

[0028] In addition, the radiation detector according to the 21st aspect of the present disclosure is based on the radiation detector according to any one of the 1st to 20th aspects, and the conversion layer contains CsI.

[0029] In addition, the radiation detector according to the 22nd aspect of the present disclosure is based on the radiation detector according to the 1st aspect, and further includes a reinforcing member on the conversion layer side of the laminate formed by laminating the conversion layer on the sensor substrate.

[0030] In addition, the radiation detector according to the 23rd aspect of the present disclosure is based on the radiation detector according to the 22nd aspect, and the reinforcing member extends over a range wider than the range where the conversion layer extends.

[0031] In addition, the radiation detector according to the 24th aspect of the present disclosure is based on the radiation detector according to the 22nd aspect, and the reinforcing member extends in regions corresponding to the central portion and the peripheral portion of the conversion layer.

[0032] In addition, the radiation detector according to the 25th aspect of the present disclosure is based on the radiation detector according to the 23rd or 24th aspect, and the peripheral portion of the conversion layer has an inclination such that the thickness becomes thinner as it approaches the outer periphery of the conversion layer, and the reinforcing member is provided along the inclination of the peripheral portion of the conversion layer.

[0033] In addition, the radiation detector according to the 26th aspect of the present disclosure is based on the radiation detector according to the 23rd aspect, and the peripheral portion of the conversion layer has an inclination such that the thickness becomes thinner as it approaches the outer periphery of the conversion layer, and a space corresponding to the inclination of the peripheral portion of the conversion layer is formed between the reinforcing member and the conversion layer.

[0034] In addition, the radiation detector according to the 27th aspect of the present disclosure is based on the radiation detector according to the 26th aspect, and a filler is filled in the space formed between the reinforcing member and the conversion layer.

[0035] In addition, the radiation detector according to the 28th aspect of the present disclosure is based on the radiation detector according to the 23rd aspect, and the end portion of the reinforcing member is supported by a spacer.

[0036] In addition, in the radiation detector according to the 29th aspect of the present disclosure, based on the radiation detector according to the 23rd aspect, the peripheral portion of the conversion layer has an inclination such that the thickness becomes thinner as it approaches the outer periphery of the conversion layer, the reinforcing member is provided along the inclination of the peripheral portion of the conversion layer, and the end portion is sealed by a sealing member.

[0037] In addition, in the radiation detector according to the 30th aspect of the present disclosure, based on the radiation detector according to the 1st aspect, a reinforcing member is further provided on the surface of the sensor substrate of the stress neutral plane adjusting member on the side opposite to the sensor substrate.

[0038] In addition, in the radiation detector according to the 31st aspect of the present disclosure, based on the radiation detector according to the 30th aspect, the reinforcing member is provided in a region that straddles the end portion of the conversion layer and is provided in a region that does not overlap with the pixel region where a plurality of pixels are provided.

[0039] In addition, the radiation image capturing apparatus according to the 32nd aspect of the present disclosure includes: a radiation detector according to any one of the 1st to 21st aspects; a control unit that outputs a control signal for reading out charges accumulated in a plurality of pixels; a driving unit that outputs a driving signal for reading out charges from the plurality of pixels in response to the control signal; and a signal processing unit that inputs an electrical signal corresponding to the charges read out from the plurality of pixels and generates and outputs image data corresponding to the input electrical signal.

[0040] In addition, in the radiation image capturing apparatus according to the 33rd aspect of the present disclosure, based on the radiation image capturing apparatus according to the 22nd aspect, the control unit and the radiation detector are arranged in a direction intersecting the stacking direction in which the base material, the layer in which a plurality of pixels are formed, and the conversion layer in the radiation detector are arranged.

[0041] In addition, in the radiation image capturing apparatus according to the 34th aspect of the present disclosure, based on the radiation image capturing apparatus according to the 22nd aspect, the radiation image capturing apparatus further includes: a power supply unit that supplies power to at least one of the control unit, the driving unit, and the signal processing unit, and the power supply unit, the control unit, and the radiation detector are arranged in a direction intersecting the stacking direction in which the sensor substrate, the conversion layer, and the stress neutral plane adjusting member in the radiation detector are arranged.

[0042] In addition, in the radiation image capturing apparatus according to the 35th aspect of the present disclosure, based on the radiation image capturing apparatus according to the 22nd aspect, the radiation image capturing apparatus further includes a housing that has an irradiation surface irradiated with radiation, and the radiation detector is housed in a state where the sensor substrate of the radiation detector and the irradiation surface face each other among the sensor substrate and the conversion layer.

[0043] Advantageous Effects of the Invention

[0044] According to the first aspect, arranging and disposing a radiation detector and an electrical circuit in a direction intersecting the stacking direction in which the conversion layer and the sensor substrate are stacked can suppress peeling of the sensor substrate from the conversion layer in the radiation detector alone as compared with a radiation image pickup apparatus provided with a flexure adjustment member over the entire radiation detector and the electrical circuit.

[0045] According to the second aspect, peeling of the sensor substrate from the conversion layer can be suppressed as compared with a case where a range is longer than a distance between an interface and a neutral plane of stress in a case where a stress neutral plane adjustment member is not provided.

[0046] According to the third aspect, peeling of the sensor substrate from the conversion layer can be suppressed as compared with a case where a stress neutral plane adjustment member is not provided in a region covering a region where the sensor substrate and the conversion layer face each other.

[0047] According to the fourth aspect, the thickness of the stress neutral plane adjustment member for obtaining a desired rigidity can be suppressed as compared with a case where the flexural modulus of elasticity is less than 150 MPa or more than 2500 MPa.

[0048] According to the fifth aspect, peeling of the sensor substrate from the conversion layer can be suppressed as compared with a case where at least one of polycarbonate, polyethylene terephthalate, and low density polyethylene is not included.

[0049] According to the sixth aspect, peeling of the sensor substrate from the conversion layer can be suppressed as compared with a case where the ratio of the coefficient of thermal expansion is less than 0.5 or more than 4.

[0050] According to the seventh aspect, peeling of the sensor substrate from the conversion layer can be suppressed as compared with a case where the coefficient of thermal expansion is less than 30 ppm / K or more than 200 ppm / K.

[0051] According to the eighth aspect, peeling of the conversion layer from the sensor substrate can be made difficult as compared with a case where an adhering layer is not provided.

[0052] According to the ninth aspect, peeling of the sensor substrate from the conversion layer can be suppressed as compared with a case where a buffer layer is not provided.

[0053] According to the tenth aspect, effects other than suppressing peeling of the sensor substrate from the conversion layer can also be obtained as compared with a case where the stress neutral plane adjustment member is formed of a single film.

[0054] According to the eleventh aspect, charging of the sensor substrate can be prevented as compared with a case where an antistatic film is not provided.

[0055] According to the twelfth aspect, charging of the sensor substrate can be prevented as compared with a case where the antistatic film is provided closer to the first surface side than the stress neutral plane adjustment film.

[0056] According to the 13th aspect, compared with the case where no moisture-proof film is provided, the moisture-proof performance against the substrate and the conversion layer can be improved.

[0057] According to the 14th aspect, compared with the case where the moisture-proof film is provided closer to the first surface side than the stress-neutral plane adjustment film, the moisture-proof performance against the substrate and the conversion layer can be improved.

[0058] According to the 15th aspect, compared with the case where the substrate does not have a microparticle layer containing inorganic microparticles with an average particle diameter of 0.05 μm or more and 2.5 μm or less, the backscattered rays generated in the substrate can be suppressed.

[0059] According to the 16th aspect, compared with the case where the substrate has a microparticle layer on the first surface side, pixels can be formed with good accuracy.

[0060] According to the 17th aspect, compared with the case where the microparticles do not contain an element having an atomic number larger than the element constituting the substrate and an atomic number of 30 or less, the suppression of backscattered rays can be effectively performed, and the absorption of radiation in the microparticle layer can be suppressed.

[0061] According to the 18th aspect, compared with the case where the coefficient of thermal expansion of the substrate at 300 °C to 400 °C exceeds 20 ppm / K, the substrate can be made suitable for the manufacture of pixels.

[0062] According to the 19th aspect, compared with the case where the substrate has a thermal shrinkage rate in the MD direction at 400 °C exceeding 0.5% and a modulus of elasticity at 500 °C less than 1 GPa in a state where the thickness is 25 μm, the substrate can be made suitable for the manufacture of pixels.

[0063] According to the 20th aspect, compared with the case where the rigidity of the stress-neutral plane adjustment member is equal to or less than the rigidity of the substrate, the flexure of the substrate can be suppressed.

[0064] According to the 21st aspect, compared with the case where the conversion layer does not contain CsI, the conversion efficiency from radiation to visible light can be improved.

[0065] According to the 32nd aspect, compared with the case where a radiation detector different from the radiation detector described in any one of the 1st to 21st aspects is provided, peeling between the sensor substrate and the conversion layer can be suppressed even when it is used in a flexed state.

[0066] According to the 33rd aspect, compared with the case where a radiation detector different from the radiation detector described in any one of the 1st to 21st aspects is provided, peeling between the sensor substrate and the conversion layer can be suppressed even when the control unit and the radiation detector are arranged in a direction crossing the stacking direction in which the substrate, the layer having a plurality of pixels formed thereon, and the conversion layer in the radiation detector are arranged.

[0067] According to the 34th aspect, compared with the case where a radiation detector different from any one of the radiation detectors described in the 1st to 21st aspects is provided, even when the power supply unit, the control unit, and the radiation detector are arranged in a direction intersecting the stacking direction in which the sensor substrate, the conversion layer, and the stress neutral plane adjustment member in the radiation detector are arranged, peeling between the sensor substrate and the conversion layer can be suppressed.

[0068] According to the 35th aspect, compared with the case where the housing houses the radiation detector in a state where the irradiation surface and the conversion layer face each other, the image quality of the radiation image can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0069] Figure 1 is a block diagram showing an example of the main part structure of the electrical system in the radiation image capturing apparatus according to the first embodiment.

[0070] Figure 2A is a top view of an example of the radiation detector according to the first embodiment as viewed from the first surface side.

[0071] Figure 2B is a cross-sectional view for explaining an example of the base material.

[0072] Figure 2C is an explanatory diagram for explaining the backscattered rays generated in the base material having the fine particle layer by the radiation that has passed through the subject.

[0073] Figure 2D is an explanatory diagram for explaining the backscattered rays generated in the base material not having the fine particle layer by the radiation that has passed through the subject.

[0074] Figure 3 is Figure 2A a cross-sectional view taken along line A-A of the radiation detector shown.

[0075] Figure 4 is for explaining Figure 2A and Figure 3 an explanatory diagram of the manufacturing method of the radiation detector shown.

[0076] Figure 5 is a schematic diagram showing an example of a state in which a load is applied to the radiation detector in the stacking direction of each layer to cause it to flex.

[0077] Figure 6A is a schematic diagram for explaining the action of the stress neutral plane adjustment member.

[0078] Figure 6B is a schematic diagram for explaining the action of the stress neutral plane adjustment member.

[0079] Figure 6CIt is a schematic diagram for explaining the function of the stress neutral plane adjustment member.

[0080] Figure 7 It is a cross-sectional view showing an example of the state where the radiation detector is disposed inside the housing in the case of using the radiation image capturing apparatus of the present embodiment in the ISS (Irradiation Side Sampling) method.

[0081] Figure 8 It is a cross-sectional view showing another example of the state where the radiation detector is disposed inside the housing in the case of using the radiation image capturing apparatus of the present embodiment in the ISS method.

[0082] Figure 9 It is a cross-sectional view of an example of the radiation detector of the second embodiment.

[0083] Figure 10 It is a cross-sectional view of an example of the radiation detector of the third embodiment.

[0084] Figure 11 It is a cross-sectional view of another example of the radiation detector of the first embodiment.

[0085] Figure 12 It is a cross-sectional view of another example of the radiation detector of the first embodiment.

[0086] Figure 13 It is a cross-sectional view showing an example of the structure of the radiation detector of the embodiment of the technology of the present disclosure.

[0087] Figure 14 It is a cross-sectional view showing an example of the structure of the radiation detector of the embodiment of the technology of the present disclosure.

[0088] Figure 15 It is a cross-sectional view showing an example of the structure of the radiation detector of the embodiment of the technology of the present disclosure.

[0089] Figure 16 It is a cross-sectional view showing an example of the structure of the radiation detector of the embodiment of the technology of the present disclosure.

[0090] Figure 17 It is a cross-sectional view showing an example of the structure of the radiation detector of the embodiment of the technology of the present disclosure.

[0091] Figure 18 It is a cross-sectional view showing an example of the structure of the radiation detector of the embodiment of the technology of the present disclosure.

[0092] Figure 19 It is a cross-sectional view showing an example of the structure of the radiation detector of the embodiment of the technology of the present disclosure.

[0093] Figure 20 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0094] Figure 21 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0095] Figure 22 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0096] Figure 23 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0097] Figure 24 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0098] Figure 25 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0099] Figure 26 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0100] Figure 27 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0101] Figure 28 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0102] Figure 29 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0103] Figure 30 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0104] Figure 31 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0105] Figure 32 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0106] Figure 33 It is a cross-sectional view showing an example of the structure of a radiation detector according to an embodiment of the technology of the present disclosure.

[0107] Figure 34 It is a cross-sectional view showing an example of the structure of a radiation detector representing an embodiment of the technology of the present disclosure.

[0108] Figure 35 It is a top view showing an example of the structure of a reinforcing member representing an embodiment of the technology of the present disclosure.

[0109] Figure 36 It is a perspective view showing an example of the structure of a reinforcing member representing an embodiment of the technology of the present disclosure.

[0110] Figure 37 It is a cross-sectional view showing an example of the structure of a radiation detector representing an embodiment of the technology of the present disclosure.

[0111] Figure 38 It is a top view showing an example of the structure of a reinforcing member representing an embodiment of the technology of the present disclosure.

[0112] Figure 39 It is a top view showing an example of the structure of a reinforcing member representing an embodiment of the technology of the present disclosure.

[0113] Figure 40 It is a cross-sectional view showing an example of the structure of a radiation detector representing an embodiment of the technology of the present disclosure.

[0114] Figure 41 It is a cross-sectional view showing an example of the structure of a radiation detector representing an embodiment of the technology of the present disclosure.

[0115] Figure 42 It is a cross-sectional view showing an example of the structure of a radiation detector representing an embodiment of the technology of the present disclosure.

[0116] Figure 43 It is a cross-sectional view showing an example of the structure of a radiation detector representing an embodiment of the technology of the present disclosure.

[0117] Figure 44 It is a cross-sectional view showing an example of the structure of a radiation detector representing an embodiment of the technology of the present disclosure.

[0118] Figure 45A It is a cross-sectional view showing an example of the structure of a radiation detector representing an embodiment of the technology of the present disclosure.

[0119] Figure 45B It is a cross-sectional view showing an example of the structure of a radiation detector representing an embodiment of the technology of the present disclosure.

[0120] Figure 45C It is a cross-sectional view showing an example of the structure of a radiation detector representing an embodiment of the technology of the present disclosure.

[0121] Figure 46 It is a cross-sectional view showing an example of the structure of a radiation detector representing an embodiment of the technology of the present disclosure.

[0122] Figure 47 It is a cross-sectional view showing an example of the structure of a radiation image capturing device representing an embodiment of the technology of the present disclosure.

[0123] Figure 48 It is a cross-sectional view showing an example of the structure of a radiation image capturing device representing an embodiment of the technology of the present disclosure.

[0124] Figure 49 It is a cross-sectional view showing an example of the structure of a radiation image capturing device representing an embodiment of the technology of the present disclosure.

[0125] Figure 50 It is a cross-sectional view showing an example of the structure of a radiation image capturing device representing an embodiment of the technology of the present disclosure.

[0126] Figure 51 It is a cross-sectional view showing an example of the structure of a radiation image capturing device representing an embodiment of the technology of the present disclosure.

[0127] Figure 52 It is a cross-sectional view showing an example of the structure of a radiation image capturing device representing an embodiment of the technology of the present disclosure.

[0128] Figure 53 It is a cross-sectional view showing an example of the structure of a radiation image capturing device representing an embodiment of the technology of the present disclosure.

[0129] Figure 54 It is a schematic diagram for explaining the position of the stress neutral plane.

[0130] Explanation of reference numerals

[0131] 1 Radiation image capturing device

[0132] 10 Radiation detector

[0133] 12 Sensor substrate

[0134] 14 Substrate

[0135] 14A First surface

[0136] 14B Second surface

[0137] 14L Microparticle layer

[0138] 14P Microparticle

[0139] 15 Pixel region

[0140] 16 Pixel

[0141] 19 Interface

[0142] 20 TFT (Switching Element)

[0143] 21 Laminated Body

[0144] 22 Sensor Section

[0145] 24 Signal Wiring

[0146] 26 Scanning Wiring

[0147] 28 Common Wiring

[0148] 30 Conversion Layer

[0149] 30B Central Portion

[0150] 30C Peripheral Portion

[0151] 32 Protective Film

[0152] 36 Stress Neutral Plane Adjusting Member

[0153] 36A Antistatic Film

[0154] 36B Stress Neutral Plane Adjusting Film

[0155] 36C Moisture - Proof Film

[0156] 36D First Layer

[0157] 36E Second Layer

[0158] 37 Stress Neutral Plane

[0159] 39 Adhesive Layer

[0160] 40 Buffer Layer

[0161] 46 Spacer

[0162] 47, 48, 48A, 51 Adhesive Layer

[0163] 50, 50A - 50D, 52 Reinforcing Member

[0164] 50H Through - Hole

[0165] 541 - 54 11 Fragment

[0166] 60 Adhesive Layer

[0167] 61 Opening

[0168] 62 Reflective Layer

[0169] 63 Groove

[0170] 64 Bonding layer

[0171] 65 Protective layer

[0172] 70 Filler

[0173] 72 Sealing member

[0174] 100 Control unit

[0175] 100A CPU

[0176] 100B Memory

[0177] 100C Storage unit

[0178] 102 Driving unit

[0179] 104 Signal processing unit

[0180] 106 Image memory

[0181] 108 Power supply unit

[0182] 110 Control board

[0183] 112 Flexible cable

[0184] 114 Power cord

[0185] 116 Sheet

[0186] 117 Protective layer

[0187] 118 Base

[0188] 120 Housing

[0189] 120A Shooting surface

[0190] 120B Boundary part

[0191] 120C Part

[0192] 200 Support

[0193] 202 Release layer

[0194] d1, d2 Distances

[0195] P Lamination direction

[0196] R Radiation

[0197] Rb Backscattered ray

[0198] S Subject

[0199] W Load Detailed Embodiments

[0200] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, the present embodiments do not limit the present invention.

[0201] [First Embodiment]

[0202] The radiation image capturing device of the present embodiment has the following function: by detecting radiation that has passed through the object to be captured, i.e., the subject, and outputting image information representing the radiation image of the subject, the radiation image of the subject is captured.

[0203] First, with reference to Figure 1 Let's illustrate a schematic overview of an example of the structure of the electrical system in the radiation image capturing device of the present embodiment. Figure 1 It is a block diagram showing an example of the main part structure of the electrical system in the radiation image capturing device of the present embodiment.

[0204] As Figure 1 shown, the radiation image capturing device 1 of the present embodiment includes: a radiation detector 10, a control unit 100, a driving unit 102, a signal processing unit 104, an image memory 106, and a power supply unit 108.

[0205] The radiation detector 10 includes a sensor substrate 12 (refer to Figure 3 ) and a conversion layer 30 that converts radiation into light (refer to Figure 3 ). The sensor substrate 12 includes a flexible base material 14 and a plurality of pixels 16 provided on the first surface 14A of the base material 14. In addition, hereinafter, the plurality of pixels 16 may sometimes be simply referred to as "pixels 16".

[0206] As Figure 1 shown, each pixel 16 of the present embodiment includes a sensor unit 22 that generates and accumulates charges corresponding to the light converted by the conversion layer, and a switching element 20 that reads out the charges accumulated in the sensor unit 22. In the present embodiment, as an example, a thin film transistor (TFT: Thin Film Transistor) is used as the switching element 20. Therefore, hereinafter, the switching element 20 will be referred to as "TFT20". In the present embodiment, as a layer that forms the sensor unit 22 and the TFT20 and is then planarized, a layer having pixels 16 formed on the first surface 14A of the base material 14 is provided. Hereinafter, for the layer having pixels 16 formed thereon, it may sometimes be referred to as "pixels 16" for convenience of explanation.

[0207] The pixels 16 are arranged in the pixel region 15 of the sensor substrate 12 along one direction (the scanning wiring direction corresponding to the horizontal direction of Figure 1 , hereinafter also referred to as the "row direction") and the crossing direction with respect to the row direction (corresponding toFigure 1 The signal wiring directions corresponding vertically (hereinafter also referred to as the "column direction") are arranged in a two-dimensional manner. In Figure 1 the arrangement of the pixels 16 is simply shown. For example, 1024 × 1024 pixels 16 are arranged in the row direction and the column direction.

[0208] In addition, in the radiation detector 10, a plurality of scan wirings 26 for controlling the switch states (on and off) of the TFTs 20 provided in each row of the pixels 16 and a plurality of signal wirings 24 for reading the charges accumulated in the sensor section 22 provided in each column of the pixels 16 are arranged to cross each other. Each of the plurality of scan wirings 26 is connected to the drive section 102 via pads (not shown). The drive section 102 is connected to a control section 100 described later, and outputs a drive signal corresponding to the control signal output from the control section 100. Each of the plurality of scan wirings 26 allows the drive signal for driving the TFT 20 to control the switch state, which is output from the drive section 102, to flow through each of the plurality of scan wirings. In addition, each of the plurality of signal wirings 24 is connected to the signal processing section 104 via pads (not shown), whereby the charges read from each pixel 16 are output to the signal processing section 104 as an electric signal. The signal processing section 104 generates and outputs image data corresponding to the input electric signal.

[0209] The signal processing section 104 is connected to a control section 100 described later, and the image data output from the signal processing section 104 is sequentially output to the control section 100. The control section 100 is connected to an image memory 106, and the image data sequentially output from the signal processing section 104 is sequentially stored in the image memory 106 under the control of the control section 100. The image memory 106 has a storage capacity capable of storing a given number of images of image data. Whenever a radiation image is taken, the image data obtained by the taking is sequentially stored in the image memory 106.

[0210] The control section 100 includes: a CPU (Central Processing Unit) 100A, a memory 100B including a ROM (Read Only Memory) and a RAM (Random Access Memory), etc., and a non-volatile storage section 100C such as a flash memory. As an example of the control section 100, a microcomputer or the like can be cited. The control section 100 controls the overall operation of the radiation image photographing apparatus 1.

[0211] In addition, in the sensor section 22 of each pixel 16, a common wiring 28 is provided in the wiring direction of the signal wiring 24 to apply a bias voltage to each pixel 16. The common wiring 28 is connected to a bias power supply (not shown) outside the sensor substrate 12 via a pad (not shown), so that a bias voltage is applied to each pixel 16 from the bias power supply.

[0212] The power supply unit 108 supplies power to various components or various circuits such as the control unit 100, the drive unit 102, the signal processing unit 104, and the image memory 106. In addition, in Figure 1 , the illustration of the wiring connecting the power supply unit 108 and various components and various circuits is omitted to avoid complication.

[0213] Furthermore, the radiation detector 10 of the present embodiment will be described in detail. Figure 2A is a top view of the radiation detector 10 of the present embodiment as viewed from the first surface 14A side. In addition, Figure 3 is Figure 2A a cross-sectional view taken along line A-A of the radiation detector 10 in

[0214] The radiation detector 10 of the present embodiment includes, as shown in Figure 2A and Figure 3 : a sensor substrate 12 including a base material 14 and pixels 16, a conversion layer 30, and a protective layer 32, which are arranged in the order of the base material 14, the pixels 16, and the conversion layer 30. In addition, hereinafter, the direction in which the base material 14, the pixels 16, and the conversion layer 30 are arranged ( Figure 3 the up-down direction in Figure 3 ) is referred to as the stacking direction (refer to

[0215] the stacking direction P). For the convenience of explanation, sometimes the conversion layer 30 side in the stacking direction P of the radiation detector 10 is referred to as "upper", and the sensor substrate 12 side is referred to as "lower".

[0216] In addition, the substrate 14 has properties that can withstand the manufacturing of the pixel 16 described in detail later. In the present embodiment, it has properties that can withstand the manufacturing of amorphous silicon TFT (a-Si TFT). As the properties of such a substrate 14, the coefficient of thermal expansion (CTE: Coefficient of Thermal Expansion) at 300°C to 400°C is preferably the same level as that of an amorphous silicon (Si) wafer (for example, ±5 ppm / K), and specifically preferably 20 ppm / K or less. In addition, as the thermal shrinkage rate of the substrate 14, the thermal shrinkage rate in the MD (Machine Direction, longitudinal) direction at 400°C in a state where the thickness is 25 μm is preferably 0.5% or less. In addition, the elastic modulus of the substrate 14 preferably does not have a transition point that general PI has in the temperature range between 300°C and 400°C, and the elastic modulus at 500°C is 1 GPa or more.

[0217] In addition, the substrate 14 of the present embodiment is preferably as Figure 2B and Figure 2C shown, and has a microparticle layer 14L containing inorganic microparticles 14P with an average particle diameter of 0.05 μm or more and 2.5 μm or less. In addition, Figure 2C is an example in the case where the radiation detector 10 of the present embodiment is applied to a radiation detector of the ISS (Irradiation Side Sampling) method that irradiates radiation R from the sensor substrate 12 side.

[0218] As Figure 2C and Figure 2D shown, in the substrate 14, backward scattered rays Rb are generated by the radiation R that has passed through the subject S. When the substrate 14 is made of a resin such as PI, since it is an organic substance, atoms such as C, H, O, and N with relatively small atomic numbers that make up the organic substance cause more backward scattered rays Rb due to the Compton effect.

[0219] As Figure 2C shown, when the substrate 14 has a microparticle layer 14L containing microparticles 14P that absorb the backward scattered rays Rb generated in the substrate 14, as Figure 2D shown, compared with the case where the substrate 14 does not have the microparticle layer 14L, it is preferable because the backward scattered rays Rb scattered backward through the substrate 14 can be suppressed.

[0220] As such microparticles 14P, it is preferable to use inorganic substances containing the following atoms: atoms that produce little backward-scattered ray Rb by themselves, absorb backward-scattered ray Rb, and on the other hand, have little absorption of radiation R that has passed through the subject S. In addition, there is a trade-off relationship between the suppression of backward-scattered ray Rb and the transmissivity of radiation R. From the viewpoint of suppressing backward-scattered ray Rb, the microparticles 14P preferably contain elements with an atomic number larger than those of C, H, O, and N that constitute the resin of the base material 14. On the other hand, although the ability to absorb backward-scattered ray Rb increases as the atomic number increases, if the atomic number exceeds 30, the absorption amount of radiation R will increase, and the reduction in the dose of radiation R reaching the conversion layer 30 will become significant, so it is not preferable. Therefore, in the case of a resinous base material 14, the microparticles 14P preferably use inorganic substances with an atomic number greater than that of the atoms constituting the base material 14, i.e., an organic substance, and 30 or less. Specific examples of such microparticles 14P include SiO2, which is an oxide of Si with an atomic number of 14, MgO, which is an oxide of Mg with an atomic number of 12, Al2O3, which is an oxide of Al with an atomic number of 13, and TiO2, which is an oxide of Ti with an atomic number of 22.

[0221] As a specific example of the resin sheet having such characteristics, XENOMAX (registered trademark) can be cited.

[0222] In addition, for the above thickness in the illustrated embodiment, it is measured using a micrometer. For the coefficient of thermal expansion, it is measured in accordance with JIS K 7197:1991. In addition, the measurement is performed as follows: test pieces are cut out by changing the angle by 15 degrees from the main surface of the base material 14, the coefficient of thermal expansion of each cut-out test piece is measured, and the highest value is taken as the coefficient of thermal expansion of the base material 14. The measurement of the coefficient of thermal expansion is performed at intervals of 10 °C from -50 °C to 450 °C for both the MD (Machine Direction, longitudinal) direction and the TD (Transverse Direction, transverse) direction, and is converted from (ppm / °C) to (ppm / K). In the measurement of the coefficient of thermal expansion, a TMA4000S device manufactured by MACScience is used, the sample length is set to 10 mm, the sample width is set to 2 mm, the initial load is set to 34.5 g / mm 2 , the heating rate is set to 5 °C / min, and the atmosphere is set to argon. For the elastic modulus, it is measured in accordance with JIS K 7171:2016. In addition, the measurement is performed as follows: test pieces are cut out by changing the angle by 15 degrees from the main surface of the base material 14, a tensile test is performed on each cut-out test piece, and the highest value is taken as the elastic modulus of the base material 14.

[0223] In addition, unevenness may sometimes appear on the surface of the substrate 14 due to the microparticles 14P contained in the microparticle layer 14L. Based on the state where such unevenness appears on the surface of the substrate 14, it may sometimes be difficult to form the pixels 16. Therefore, as Figure 2C shown, the substrate 14 preferably has a microparticle layer 14L on the second surface 14B on the opposite side of the first surface where the pixels 16 are formed, that is, on the second surface 14B on the opposite side of the first surface where the conversion layer 30 is provided.

[0224] In addition, in order to sufficiently absorb the backscattered rays Rb generated in the substrate 14, it is preferable that the substrate 14 has a microparticle layer 14L on the surface on the side closer to the subject S. As Figure 2C shown, in the radiation detector 10 in the ISS method, it is preferable to have a microparticle layer 14L on the second surface 14B.

[0225] In this way, in the radiation detector 10 in the ISS method, since the substrate 14 has a microparticle layer 14L on the second surface 14B, the pixels 16 can be formed with good accuracy, and the backscattered rays Rb can be effectively suppressed.

[0226] In addition, as the substrate 14 having the desired flexibility, it is not limited to a resin substrate such as a resin sheet. For example, the substrate 14 can also be a relatively thin glass substrate or the like. As a specific example of the case where the substrate 14 is a glass substrate, generally, in a size of about 43 cm on one side, since it has flexibility if the thickness is 0.3 mm or less, as long as the substrate has a thickness of 0.3 mm or less, it can be the desired glass substrate.

[0227] As Figure 2A and Figure 3 shown, a plurality of pixels 16 are provided in a part of the inner region of the first surface 14A of the substrate 14. In other words, in the sensor substrate 12 of the present embodiment, no pixels 16 are provided in the outer peripheral portion of the first surface 14A of the substrate 14. In the present embodiment, the region of the first surface 14A of the substrate 14 where the pixels 16 are provided is defined as the pixel region 15.

[0228] In addition, as Figure 3 shown, the conversion layer 30 of the present embodiment covers the pixel region 15. In the present embodiment, as an example of the conversion layer 30, a scintillator containing CsI (cesium iodide) is used. As such a scintillator, for example, CsI:Tl (cesium iodide doped with thallium) or CsI:Na (cesium iodide doped with sodium) whose emission spectrum during X-ray irradiation is 400 nm to 700 nm is preferably used. In addition, the emission peak wavelength of CsI:Tl in the visible light region is 565 nm.

[0229] In addition, the radiation detector 10 of the present embodiment is asFigure 2A and Figure 3 As shown, the protective film 32 is disposed on the side of the first surface 14A of the substrate 14 and covers the entire laminate formed by laminating the pixels 16 and the conversion layer 30. Specifically, the protective film 32 covers the entire surface of the laminate formed by laminating the pixels 16 and the conversion layer 30 except for the surface in contact with the first surface 14A of the substrate 14.

[0230] As the protective film 32, an insulating sheet such as parylene (registered trademark), polyethylene terephthalate, or a moisture-proof film such as an ALPET (registered trademark) sheet in which aluminum is laminated by bonding an aluminum foil to an insulating sheet (film) is used.

[0231] In addition, as shown in Figure 2A and Figure 3 the radiation detector 10 of the present embodiment is provided with a stress neutral plane adjusting member 36 on the second surface 14B of the substrate 14. The stress neutral plane adjusting member 36 adjusts the position of the stress neutral plane (details will be described later) in the radiation detector 10 when the radiation detector 10 is bent with respect to the lamination direction P. In the present embodiment, as an example of the stress neutral plane adjusting member 36, PET (Polyethylene Terephthalate), white PET, or foamed white PET can be used. White PET is a product obtained by adding a white pigment such as TiO2 or barium sulfate to PET, and foamed white PET is white PET with a porous surface. In addition, as other examples of the stress neutral plane adjusting member 36, organic films such as PC (Polycarbonate), LDPE (Low Density Polyethylene), PPS (Poly Phenylene Sulfide), OPP (Oriented Poly Propylene film), PEN (Poly Ethylene Naphthalate), and PI can be cited.

[0232] In addition, the stress neutral plane adjustment member 36 of the present embodiment preferably uses a material having a flexural modulus of elasticity of 150 MPa or more and 2500 MPa or less. The method for measuring the flexural modulus of elasticity is based on, for example, JIS K 7171:2016 standard. From the viewpoint of suppressing the deflection of the base material 14, the stress neutral plane adjustment member 36 preferably has a higher flexural rigidity than the base material 14. In addition, if the flexural modulus of elasticity becomes low, the flexural rigidity also becomes low. In order to obtain the desired flexural rigidity, it is necessary to increase the thickness of the stress neutral plane adjustment member 36, and the overall thickness of the radiation detector 10 will increase. Considering the material of the stress neutral plane adjustment member 36 as described above, when it is desired to obtain a flexural rigidity exceeding 140000 Pacm 4 the thickness of the stress neutral plane adjustment member 36 tends to become relatively thick. Therefore, in order to obtain appropriate rigidity and consider the overall thickness of the radiation detector 10, the material used for the stress neutral plane adjustment member 36 is more preferably a material having a flexural modulus of elasticity of 150 MPa or more and 2500 MPa or less. In addition, the flexural rigidity of the stress neutral plane adjustment member 36 is preferably 540 Pacm 4 or more and 140000 Pacm 4 or less.

[0233] In addition, the coefficient of thermal expansion of the stress neutral plane adjustment member 36 of the present embodiment is preferably close to the coefficient of thermal expansion of the material of the conversion layer 30. More preferably, the ratio of the coefficient of thermal expansion of the stress neutral plane adjustment member 36 to the coefficient of thermal expansion of the conversion layer 30 (coefficient of thermal expansion of the stress neutral plane adjustment member 36 / coefficient of thermal expansion of the conversion layer 30) is 0.5 or more and 4 or less. As the coefficient of thermal expansion of such a stress neutral plane adjustment member 36, it is preferably 30 ppm / K or more and 200 ppm / K or less. For example, when the conversion layer 30 uses CsI:Tl as the material, the coefficient of thermal expansion is 50 ppm / K. In this case, LDPE having a coefficient of thermal expansion of 100 ppm / K to 200 ppm / K, polyvinyl chloride (PVC: Polyvinyl Chloride) having a coefficient of thermal expansion of 60 ppm / K to 80 ppm / K, acrylic having a coefficient of thermal expansion of 70 ppm / K to 80 ppm / K, PET having a coefficient of thermal expansion of 65 ppm / K to 70 ppm / K, PC having a coefficient of thermal expansion of 65 ppm / K, and Teflon (registered trademark) having a coefficient of thermal expansion of 45 ppm / K to 70 ppm / K can be cited as the material of the stress neutral plane adjustment member 36.

[0234] Furthermore, considering the above-mentioned flexural modulus of elasticity, as the material of the stress neutral plane adjustment member 36, a material containing at least one of PET, PC, and LDPE is more preferable.

[0235] In addition, the stress neutral plane adjusting member 36 preferably has other functions such as antistatic function and moisture-proof function in addition to adjusting the position of the stress neutral plane.

[0236] refer to Figure 4 To illustrate how Figure 2A as well as Figure 3 A method for manufacturing a radiation detector 10 including a sensor substrate 12 using a flexible base material 14 as in the radiation detector 10 shown.

[0237] like Figure 4 As shown in the figure, the base material 14 is formed on a support body 200 such as a glass substrate having a thickness thicker than the base material 14, with a release layer 202 interposed therebetween. When the base material 14 is formed by a lamination method, a sheet forming the base material 14 is bonded to the support body 200. The second surface 14B of the base material 14 is in contact with the release layer 202.

[0238] Furthermore, the pixels 16 are formed on the first surface 14A of the substrate 14. In the present embodiment, as an example, the pixels 16 are formed on the first surface 14A of the substrate 14 via a primer layer (not shown) made of SiN or the like.

[0239] Furthermore, a conversion layer 30 is formed on the layer where the pixel 16 is formed (hereinafter simply referred to as "pixel 16"). In this embodiment, the conversion layer 30 of CsI is formed as columnar crystals directly on the sensor substrate 12 by a vapor deposition method such as vacuum evaporation, sputtering, and CVD (Chemical Vapor Deposition). In this case, the side of the conversion layer 30 that is in contact with the pixel 16 becomes the base point side of the growth direction of the columnar crystal.

[0240] In addition, when the conversion layer 30 of CsI is directly provided on the sensor substrate 12 by the vapor deposition method, a reflective layer (not shown in the figure) having a function of reflecting the light converted by the conversion layer 30 may be provided on the surface of the conversion layer 30 opposite to the side in contact with the sensor substrate 12. The reflective layer may be provided directly on the conversion layer 30, or may be provided via a close contact layer or the like. As the material of the reflective layer, it is preferred to use an organic material, for example, it is preferred to use at least one of white PET, TiO2, Al2O3, foamed white PET, polyester-based high-reflective sheet, and mirror-reflective aluminum as the material. In particular, from the viewpoint of reflectivity, it is preferred to use white PET as the material. In addition, the so-called polyester-based high-reflective sheet is a sheet (film) having a multilayer structure in which a plurality of thin polyester sheets are overlapped.

[0241] In addition, when using a CsI scintillator as the conversion layer 30, the conversion layer 30 can also be formed on the sensor substrate 12 by a method different from that of the present embodiment. For example, a product obtained by vapor-depositing CsI on an aluminum plate or the like can be prepared, and the side of CsI that does not contact the aluminum plate and the pixel 16 of the sensor substrate 12 can be bonded by an adhesive sheet or the like to form the conversion layer 30 on the sensor substrate 12. In this case, it is preferable to bond the product in a state where the entire conversion layer 30 including the aluminum plate is covered with the protective film 32 to the pixel 16 of the sensor substrate 12. In addition, in this case, the side of the conversion layer 30 that contacts the pixel 16 becomes the front end side of the growth direction of the columnar crystals.

[0242] In addition, different from the radiation detector 10 of the present embodiment, GOS (Gd2O2S:Tb) or the like can be used as the conversion layer 30 instead of CsI. In this case, for example, GOS is dispersed in an adhesive such as a resin, and the sheet formed after such dispersion is bonded to a support formed of white PET or the like through an adhesive layer or the like. A member thus obtained is prepared, and the side of GOS that is not bonded to the support and the pixel 16 of the sensor substrate 12 are bonded by an adhesive sheet or the like, whereby the conversion layer 30 can be formed on the sensor substrate 12. In addition, when CsI is used for the conversion layer 30 compared with the case where GOS is used, the conversion efficiency from radiation to visible light is higher.

[0243] Furthermore, in the radiation detector 10 of the present embodiment, on the sensor substrate 12 provided with the conversion layer 30, a protective film 32 is formed in a region covering the entire laminate formed by laminating the pixel 16 and the conversion layer 30, resulting in Figure 4 the state shown.

[0244] After that, the sensor substrate 12 provided with the conversion layer 30 and the protective film 32 is peeled off from the support 200. For example, in the lamination method, any one of the four sides of the sensor substrate 12 (substrate 14) is used as the starting point for peeling, and the sensor substrate 12 is gradually peeled off from the support 200 from the starting side to the opposite side, thereby performing mechanical peeling.

[0245] In the present embodiment, further after peeling the sensor substrate 12 from the support 200, a stress neutral plane adjustment member 36 is formed on the second surface 14B of the substrate 14 by attachment or the like.

[0246] Next, with reference to Figure 5 and Figures 6A - 6C the function of the stress neutral plane adjustment member 36 in the radiation detector 10 of the present embodiment will be described. The stress neutral plane adjustment member 36 adjusts the position of the stress neutral plane 37 with respect to the lamination direction P generated when the radiation detector 10 is bent by applying a load W in the lamination direction P. InFigure 5 FIG. is a schematic view showing an example of a state in which a load W is applied to the radiation detector 10 in the stacking direction P to cause it to flex. In addition, in Figure 5 , for simplicity, only the sensor substrate 12, the conversion layer 30, and the stress neutral plane adjustment member 36 in the radiation detector 10 are schematically shown.

[0247] In Figure 5 , as an example of the flexed state of the radiation detector 10, a state is shown in which the conversion layer 30 side is stretched and the sensor substrate 12 (stress neutral plane adjustment member 36) side is shortened. In this case, even when the radiation detector 10 flexes, a surface (a surface in the direction crossing the stacking direction P) that is neither stretched nor shortened, i.e., the stress neutral plane 37, appears in the radiation detector 10. At the stress neutral plane 37, the stress becomes 0.

[0248] When the radiation detector 10 flexes, stress is applied to the interface 19 between the sensor substrate 12 and the conversion layer 30, so that the conversion layer 30 is likely to peel off from the sensor substrate 12. In addition, in the present embodiment, the so-called "interface" refers to the surface of the conversion layer 30 facing the sensor substrate 12.

[0249] When the stress neutral plane adjustment member 36 is not provided, since the conversion layer 30 has a greater thickness than the sensor substrate 12, generally as Figure 6A shown, the position of the stress neutral plane 37 is located on the side closer to the conversion layer 30 (the upper side in the stacking direction P) than the interface 19. In Figure 6A the shown case, the conversion layer 30 is likely to peel off from the sensor substrate 12 due to the stress applied to the interface 19.

[0250] On the other hand, when the stress neutral plane adjustment member 36 is provided on the sensor substrate 12 side as in the radiation detector 10 of the present embodiment, the position of the stress neutral plane 37 moves toward the sensor substrate 12 side compared to the case where the stress neutral plane adjustment member 36 is not provided. Therefore, as Figure 6B shown, the position of the stress neutral plane 37 can be made near the interface 19. Specifically, let the distance between the interface 19 and the stress neutral plane 37 in the case where the stress neutral plane adjustment member 36 is not provided as shown in Figure 6A be d1, and let the distance between the interface 19 and the stress neutral plane 37 in the case where the stress neutral plane adjustment member 36 is provided as shown in Figure 6B be d2. In this case, the distance d2 can be made smaller than the distance d1 (d1 > d2).

[0251] The position of the stress neutral plane 37 is preferably as Figure 6CAs shown, the positions of the interface 19 and the stress neutral plane 37 coincide. In this case, since the stress in the interface 19 can be made zero, it is more difficult for the conversion layer 30 to peel off from the sensor substrate 12.

[0252] Thus, in the radiation detector 10 of the present embodiment, by providing the stress neutral plane adjustment member 36 on the second surface 14B of the base material 14 in the sensor substrate 12, the position of the stress neutral plane 37 generated in the radiation detector 10 can be adjusted to a range less than the distance d1 from the interface 19. In the present embodiment, regarding the position of the stress neutral plane 37, the range less than the distance d1 from the interface 19 is set as the allowable range of the position of the stress neutral plane 37. Thereby, in the radiation detector 10 of the present embodiment, when the radiation detector 10 is flexed, since the stress generated in the interface 19 can be made close to zero, the conversion layer 30 is difficult to peel off from the sensor substrate 12. In addition, the range less than the distance d1 from the interface 19 in the present embodiment is an example of the predetermined range of the present disclosure.

[0253] In addition, the thickness of the stress neutral plane 37 is determined corresponding to the range (allowable range, allowable range < 2d1) that can be allowed as the position of the stress neutral plane 37 from the interface 19. The specific thickness of the stress neutral plane 37 is determined corresponding to the degree of adhesion (ease of peeling) between the sensor substrate 12 and the conversion layer 30, and the assumed degree of flexure, etc. For example, since when the conversion layer 30 is directly formed on the sensor substrate 12 by vapor deposition, the conversion layer 30 is more likely to peel off than when the separately formed conversion layer 30 is bonded, it is preferable to increase the thickness of the stress neutral plane adjustment member 36 when the conversion layer 30 is directly vapor-deposited on the sensor substrate 12 compared to the case of bonding.

[0254] Next, the radiation image capturing apparatus 1 using the radiation detector 10 of the present embodiment will be described. In the radiation image capturing apparatus 1, the radiation detector 10 is provided inside a housing that transmits radiation and has waterproofness, antibacterial properties, and airtightness.

[0255] In Figure 7 FIG. shows an example of a state in which the radiation detector 10 is provided in the housing 120 when the radiation image capturing apparatus 1 of the present embodiment is used in the ISS method.

[0256] As Figure 7 shown, inside the housing 120, the radiation detector 10, the power supply unit 108, and the control board 110 are arranged side by side in a direction crossing the stacking direction P. The radiation detector 10 is arranged such that the second surface 14B of the base material 14 faces the irradiation surface 120A of the housing 120 that is irradiated with radiation transmitted through the subject.

[0257] The control substrate 110 is a substrate on which an image memory 106, a control unit 100, etc. are formed, and is electrically connected to the pixels 16 of the sensor substrate 12 through a flexible cable 112 including a plurality of signal wirings. In addition, in the present embodiment, a so-called COF (Chip On Film) in which a driving unit 102 and a signal processing unit 104 are provided on the flexible cable 112 is assumed, but at least one of the driving unit 102 and the signal processing unit 104 may be formed on the control substrate 110.

[0258] In addition, the control substrate 110 and the power supply unit 108 are connected by a power line 114.

[0259] The housing 120 is preferably lightweight, preferably has a low absorption rate of radiation R, particularly X-rays, and high rigidity, and is preferably made of a material having a sufficiently high elastic modulus. As the material of the housing 120, a material having a flexural elastic modulus of 10,000 MPa or more is preferably used. As the material of the housing 120, carbon or CFRP (Carbon Fiber Reinforced Plastics) having a flexural elastic modulus of about 20,000 to 60,000 MPa can be suitably used.

[0260] In the radiograph imaging of the radiograph imaging apparatus 1, a load from the subject is applied to the imaging surface 120A of the housing 120. When the rigidity of the housing 120 is insufficient, the sensor substrate 12 may be deflected due to the load from the subject, and adverse conditions such as damage to the pixels 16 may occur. By accommodating the radiation detector 10 inside the housing 120 made of a material having a flexural elastic modulus of 10,000 MPa or more, the deflection of the sensor substrate 12 caused by the load from the subject can be suppressed.

[0261] In the housing 120 of the radiograph imaging apparatus 1 of the present embodiment, a sheet 116 is further provided on the side where the radiation that has passed through the radiation detector 10 exits. As the sheet 116, for example, a copper sheet can be cited. The copper sheet is difficult to generate secondary radiation by the incident radiation, and thus has a function of preventing scattering toward the rear, that is, the conversion layer 30 side. In addition, the sheet 116 covers at least the entire surface on the radiation exit side of the conversion layer 30, preferably covers the entire conversion layer 30, and more preferably covers the entire protective film 32. In addition, the thickness of the sheet 116 can be selected according to the flexibility and weight of the entire radiograph imaging apparatus 1. For example, when the sheet 116 is a copper sheet, as long as the thickness is about 0.1 mm or more, it has flexibility and also has a function of shielding secondary radiation that has invaded the inside of the radiograph imaging apparatus 1 from the outside. In addition, for example, when the sheet 116 is a copper sheet, from the viewpoints of flexibility and weight, it is preferably 0.3 mm or less.

[0262] Figure 7 The radiation image capturing device 1 shown can capture a radiation image in a state where the radiation detector 10 is deflected in a direction out of the plane of the second surface 14B of the base material 14. For example, it can maintain a state where the radiation detector 10 is deflected corresponding to the imaging region of the subject and the like to capture a radiation image.

[0263] In Figure 7 In the radiation image capturing device 1 shown, since the power supply unit 108 and the control substrate 110 are provided in the peripheral portion of the relatively rigid housing 120, the influence of external force on the power supply unit 108 and the control substrate 110 can be suppressed.

[0264] In addition, in Figure 7 a form is shown in which both the power supply unit 108 and the control substrate 110 are provided on one side of the radiation detector 10, specifically on one side of one side of the rectangular radiation detector 10, but the positions where the power supply unit 108 and the control substrate 110 are provided are not limited to Figure 7 the form shown. For example, the power supply unit 108 and the control substrate 110 can be dispersedly provided on each of the two opposing sides of the radiation detector 10, or can be dispersedly provided on each of the two adjacent sides. In addition, in Figure 7 a form is shown in which in the present embodiment, the power supply unit 108 and the control substrate 110 are formed as one structural part (substrate), but it is not limited to Figure 7 the form shown, and it can also be a form in which at least one of the power supply unit 108 and the control substrate 110 is formed as a plurality of structural parts (substrates). For example, the power supply unit 108 is formed in a form including a first power supply unit and a second power supply unit (both not shown), and the first power supply unit and the second power supply unit are each dispersedly provided on each of the two opposing sides of the radiation detector 10.

[0265] In addition, when the entire radiation image capturing device 1 (radiation detector 10) is deflected to capture a radiation image, the influence of the deflection on the image can be suppressed by performing image correction.

[0266] In addition, in Figure 8 another example of the state in which the radiation detector 10 is provided in the housing 120 when the radiation image capturing device 1 of the present embodiment is applied in the ISS method is shown.

[0267] As Figure 8 shown, in the housing 120, the power supply unit 108 and the control substrate 110 are arranged side by side in a direction intersecting the stacking direction P, and the radiation detector 10, the power supply unit 108, and the control substrate 110 are arranged in the stacking direction P.

[0268] In addition, in the radiation image capturing device 1 shown in Figure 8 a base 118 that supports the radiation detector 10 and the control substrate 110 is provided between the control substrate 110, the power supply unit 108, and the sheet 116. For example, carbon or the like is used for the base 118.

[0269] Figure 8 the radiation image capturing device 1 shown in can capture a radiation image in a state where the radiation detector 10 is slightly deflected in the out-of-plane direction of the second surface 14B of the base material 14, for example, in a state where the central portion is deflected by about 1 mm to 5 mm. However, since the control substrate 110, the power supply unit 108, and the radiation detector 10 are arranged in the stacking direction P and the base 118 is provided, they will not be deflected to the Figure 7 extent of the case of the radiation image capturing device 1 shown in. Therefore, since the stress caused by deflection is smaller than that of the radiation image capturing device 1 shown in Figure 7 the transfer layer 30 is less likely to peel off from the sensor substrate 12, and thus the thickness of the stress neutral plane adjustment member 36 can be made thinner.

[0270] [Second Embodiment]

[0271] In the radiation detector 10 of the present embodiment, the structure of the stress neutral plane adjustment member 36 is different from that of the radiation detector 10 of the first embodiment. In the first embodiment, it was described that the stress neutral plane adjustment member 36 is in the form of a single film (layer). In contrast, in the present embodiment, it is described that the stress neutral plane adjustment member 36 is in the form of a laminated structure in which a plurality of films are laminated.

[0272] In Figure 9 a cross-sectional view showing an example of the radiation detector 10 of the present embodiment is shown. As Figure 9 shown, the stress neutral plane adjustment member 36 in the radiation detector 10 of the present embodiment is a laminated film in which an antistatic film 36A and a stress neutral plane adjustment film 36B are laminated in the stacking direction P.

[0273] As Figure 9As shown, the charge prevention film 36A is provided on the side closer to the base material 14 than the stress neutral plane adjustment film 36B, in other words, on the side corresponding to the second surface 14B of the base material 14. The charge prevention film 36A has the function of preventing the sensor substrate 12 from being charged. Therefore, the charge prevention film 36A is preferably provided on the side closer to the sensor substrate 12 than the stress neutral plane adjustment film 36B as described above, and more preferably in direct contact with the sensor substrate 12. As such a charge prevention film 36A, for example, a film of ALPET, a film using the antistatic coating "COLCOAT" (trade name: manufactured by COLCOAT Co., Ltd.), etc. can be cited. In this case, the charge prevention film 36A can be formed by attaching these charge prevention films to the second surface 14B of the base material 14.

[0274] On the other hand, the stress neutral plane adjustment film 36B mainly has the function of adjusting the position of the stress neutral plane 37 within an allowable range. Generally, the thickness of the charge prevention film 36A is thin, and it is not sufficient to adjust the position of the stress neutral plane 37 only with the charge prevention film 36A. Therefore, in the present embodiment, by providing the stress neutral plane adjustment film 36B, the position of the stress neutral plane 37 can be adjusted within an allowable range with the entire stress neutral plane adjustment member 36. Such a stress neutral plane adjustment film 36B can be made of the same material as the stress neutral plane adjustment member 36 described in the first embodiment, and the manufacturing method can also be made the same.

[0275] The base material 14 of the present embodiment has flexibility. Since the thickness of the base material 14 is thinner than that of a general non-flexible radiation detector, the base material 14 is likely to be charged by friction or the like. When the sensor substrate 12 is charged, the sensor substrate 12 may deteriorate due to electrostatic breakdown or the like of the TFT 20, and the image quality of the radiation image obtained by the radiation detector 10 may be reduced.

[0276] For such a situation, in the radiation detector 10 of the present embodiment, by forming the stress neutral plane adjustment member 36 as a laminated film in which the charge prevention film 36A and the stress neutral plane adjustment film 36B are laminated, charging of the sensor substrate 12 can be suppressed.

[0277] [Third Embodiment]

[0278] In the radiation detector 10 of the present embodiment, the structure of the stress neutral plane adjustment member 36 is different from that of the radiation detector 10 of the second embodiment.

[0279] In Figure 10 A cross-sectional view showing an example of the radiation detector 10 of the present embodiment is shown. As Figure 10As shown, the stress neutral plane adjustment member 36 in the radiation detector 10 of the present embodiment is a laminated film formed by laminating a moisture-proof film 36C and a stress neutral plane adjustment film 36B in the lamination direction P.

[0280] That is, as Figure 10 shown, the stress neutral plane adjustment member 36 of the present embodiment is different from the stress neutral plane adjustment member 36 of the second embodiment in that it has a moisture-proof film 36C instead of the antistatic film 36A that the stress neutral plane adjustment member 36 of the second embodiment has.

[0281] As Figure 10 shown, the moisture-proof film 36C is provided on the side closer to the base material 14 than the stress neutral plane adjustment film 36B, in other words, on the side corresponding to the second surface 14B of the base material 14. The moisture-proof film 36C can improve the moisture-proof performance against the base material 14 and the conversion layer 30. Especially when the conversion layer 30 is CsI, CsI is not resistant to moisture, and when moisture invades the inside of the radiation detector 10, the image quality of the radiation image may be degraded. Therefore, when CsI is used in the conversion layer 30, it is preferable to improve the moisture-proof performance against the conversion layer 30 as in the radiation detector 10 of the present embodiment.

[0282] Therefore, the moisture-proof film 36C is preferably provided on the side closer to the sensor substrate 12 than the stress neutral plane adjustment film 36B as described above, and more preferably in direct contact with the sensor substrate 12. As such a moisture-proof film 36C, similar to the protective film 32, examples include moisture-proof films such as parylene films, insulating sheets such as polyethylene terephthalate, and sheets of ALPET. In this case, by attaching these moisture-proof films to the second surface 14B of the base material 14, the moisture-proof film 36C can be formed.

[0283] In the radiation detector 10 of the present embodiment, by thus forming the stress neutral plane adjustment member 36 as a laminated film formed by laminating the moisture-proof film 36C and the stress neutral plane adjustment film 36B, intrusion of moisture from the second surface 14B side of the base material 14 can be suppressed, and the moisture-proof property can be improved.

[0284] In addition, the form of the stress neutral plane adjustment member 36 being a laminated structure formed by laminating a plurality of films is not limited to the structure of the stress neutral plane adjustment member 36 shown in the present embodiment and the above-described second embodiment. For example, the stress neutral plane adjustment member 36 may be a structure including both the antistatic film 36A and the moisture-proof film 36C, or may be a structure replacing the antistatic film 36A and the moisture-proof film 36C or including a heat insulating film, a vibration-proof film, etc. together with them.

[0285] As described above, the radiation detector 10 of each of the above-described embodiments includes: a sensor substrate 12 including a flexible base material 14 and a layer provided on the first surface 14A of the base material 14 and formed with a plurality of pixels 16 that accumulate charges generated corresponding to light converted from radiation; a conversion layer 30 provided on the side opposite to the side where the base material 14 is provided in the layer forming the pixels 16, which converts radiation into light; and a stress neutral plane adjustment member 36 provided on the second surface 14B side opposite to the first surface 14A of the base material 14, which adjusts the position of the stress neutral plane 37 from the interface 19 opposite to the sensor substrate 12, which is the surface of the conversion layer 30, to a predetermined allowable range in the stacking direction P in which the sensor substrate 12 and the conversion layer 30 are stacked.

[0286] In the radiation detector 10 using the flexible base material 14 in the sensor substrate 12, the conversion layer 30 is likely to be peeled off from the sensor substrate 12 due to the bending of the sensor substrate 12. Particularly when the radiation detector 10 is treated as a single unit, for example, in the manufacturing process of the radiation image capturing device 1, during so-called handling such as during the period until it is set in the housing 120, the sensor substrate 12 is more likely to bend compared to the state of the radiation image capturing device 1. Thus, when the radiation detector 10 is treated as a single unit, since the sensor substrate 12 is likely to bend, the conversion layer 30 is likely to be peeled off from the sensor substrate 12.

[0287] In contrast, in the radiation detector 10 of each of the above-described embodiments, since the position of the stress neutral plane 37 is adjusted from the interface 19 to a position within the allowable range by the stress neutral plane adjustment member 36, even when the radiation detector 10 is a single unit, peeling of the conversion layer 30 from the sensor substrate 12 can be suppressed when the radiation detector 10 bends.

[0288] Therefore, according to the radiation detector 10 of each of the above-described embodiments, when the radiation detector 10 and the electrical circuit are arranged and configured in a direction intersecting the stacking direction in which the conversion layer 30 and the sensor substrate 12 are stacked, compared with a radiation image capturing device provided with a flexure adjustment member throughout the entire radiation detector 10 and the electrical circuit, even when the radiation detector 10 is a single unit, peeling between the sensor substrate and the conversion layer can be suppressed.

[0289] In addition, the region where the stress neutral plane adjustment member 36 is provided is not particularly limited, as long as it is provided on the second surface 14B side of the base material 14 and at least covers the region where the sensor substrate 12 and the conversion layer 30 face each other.

[0290] In addition, in each of the above-described embodiments, the form in which the conversion layer 30 is directly provided on the sensor substrate 12 is described, but it is not limited to this form, and other layers (films) may be provided between the sensor substrate 12 and the conversion layer 30. For example, as Figure 11 shown in an example, the radiation detector 10 may have an adhesion layer 39 between the sensor substrate 12 and the conversion layer 30. In other words, the sensor substrate 12 may be in contact with the conversion layer 30 with the adhesion layer 39 interposed therebetween. The adhesion layer 39 is used to improve the adhesion between the sensor substrate 12 and the conversion layer 30 as compared with the case where the adhesion layer 39 is not provided. Since the adhesion between the sensor substrate 12 and the conversion layer 30 is improved by having the adhesion layer 39, the conversion layer 30 is less likely to peel off from the sensor substrate 12 as compared with the case where the adhesion layer 39 is not provided. Therefore, in the case where the adhesion layer 39 is provided, the thickness of the stress neutral plane adjusting member 36 can be made thinner as compared with the case where the adhesion layer 39 is not provided. As such an adhesion layer 39, for example, a parylene film or the like can be cited.

[0291] In addition, for example, as Figure 12 shown in an example, the radiation detector 10 may have a buffer layer 40 between the sensor substrate 12 and the conversion layer 30. The buffer layer 40 has a function of buffering the difference in the coefficient of thermal expansion between the conversion layer 30 and the base material 14. The coefficient of thermal expansion of the buffer layer 40 is the coefficient of thermal expansion between the coefficient of thermal expansion of the sensor substrate 12 and the coefficient of thermal expansion of the conversion layer 30. The greater the difference in the coefficient of thermal expansion between the conversion layer 30 and the base material 14, the more preferably the radiation detector 10 has the buffer layer 40. For example, in the case where the above-described XENOMAX (registered trademark) is used for the base material 14, since the difference in the coefficient of thermal expansion from other materials becomes larger as compared with the conversion layer 30, it is preferable to provide the buffer layer 40 as in the radiation detector 10 Figure 12 shown. As the buffer layer 40, a PI film or a parylene film is used.

[0292] In addition, in each of the above-described embodiments, the form in which the radiation detector 10 is manufactured by a lamination method is described, but it is not limited to this form, and the radiation detector 10 may be manufactured by a coating method.

[0293] In addition, in each of the above-described embodiments, the case where the radiation detector 10 (radiation image pickup device 1) is applied to the ISS method is described, but the radiation detector 10 (radiation image pickup device 1) may also be applied to the PSS (Penetration Side Sampling) method in which the sensor substrate 12 is disposed on the side opposite to the side where the radiation of the conversion layer 30 is incident.

[0294] In addition, in each of the above-described embodiments, it is described that Figure 1as shown, the pixels 16 are arranged in a two-dimensional matrix form, but it is not limited thereto. For example, they can be arranged in a one-dimensional form or a honeycomb arrangement. In addition, the shape of the pixels is not limited, and can be rectangular, or can be a polygon such as a hexagon. Furthermore, it goes without saying that the shape of the pixel region 15 is also not limited.

[0295] In addition, the structures and manufacturing methods of the radiation image capturing apparatus 1, the radiation detector 10, etc. described in the above-described embodiments are examples, and it goes without saying that they can be changed according to the situation without departing from the gist of the present invention.

[0296] [Other Embodiments]

[0297] In the radiation detector 10 of the above-described embodiments, the form in which the stress neutral plane adjustment member 36 is provided on the sensor substrate 12 side of the laminate formed by laminating the sensor substrate 12 and the conversion layer 30 has been described. It can also be as Figures 13 - 34 shown, and the radiation detector 10 of the above-described embodiments can be further configured such that the reinforcing member 50 is provided on the conversion layer 30 side of the laminate 21 formed by laminating the sensor substrate 12 and the conversion layer 30.

[0298] In addition, the position of the stress neutral plane 37 in the laminate 21 formed by laminating the sensor substrate 12 and the conversion layer 30 is different from the position of the stress neutral plane 37 in the entire laminate in the state where the reinforcing member 50 is provided in the laminate 21. Therefore, in the case where the reinforcing member 50 is provided, the stress neutral plane adjustment member 36 brings the stress neutral plane 37 and the interface 19 closer in the case where the laminate in the state where the reinforcing member 50 is provided in the laminate 21 is regarded as one laminate.

[0299] The bending rigidity of the reinforcing member 50 is higher than that of the base material 14, and the dimensional change (deformation) with respect to the force applied in the direction perpendicular to the surface facing the conversion layer 30 is smaller than the dimensional change with respect to the force applied in the direction perpendicular to the first surface 14A of the base material 14. In addition, the thickness of the reinforcing member 50 in the present embodiment is thicker than the thickness of the base material 14. Here, the so-called bending rigidity means the difficulty of bending, and the higher the bending rigidity, the more difficult it is to bend.

[0300] Specifically, the reinforcing member 50 of the present embodiment preferably uses a material having a flexural modulus of elasticity of 150 MPa or more and 2500 MPa or less. The method for measuring the flexural modulus of elasticity is based on, for example, JIS K 7171:2016 standard. From the viewpoint of suppressing the flexure of the base material 14, the reinforcing member 50 preferably has a higher flexural rigidity than the base material 14. In addition, if the flexural modulus of elasticity becomes low, the flexural rigidity also becomes low. In order to obtain the desired flexural rigidity, it is necessary to increase the thickness of the reinforcing member 50, and the overall thickness of the radiation detector 10 will increase. Considering the material of the reinforcing member 50 as described above, when it is desired to obtain a flexural rigidity exceeding 140000 Pacm 4 , the thickness of the reinforcing member 50 tends to become relatively thick. Therefore, in order to obtain appropriate rigidity and consider the overall thickness of the radiation detector 10, the material used for the reinforcing member 50 preferably has a flexural modulus of elasticity of 150 MPa or more and 2500 MPa or less. In addition, the flexural rigidity of the reinforcing member 50 is preferably 540 Pacm 4 or more and 140000 Pacm 4 or less.

[0301] In addition, the coefficient of thermal expansion of the reinforcing member 50 is preferably close to the coefficient of thermal expansion of the material of the conversion layer 30. More preferably, the ratio of the coefficient of thermal expansion of the reinforcing member 50 to the coefficient of thermal expansion of the conversion layer 30 (coefficient of thermal expansion of the reinforcing member 50 / coefficient of thermal expansion of the conversion layer 30) is 0.5 or more and 2 or less. As the coefficient of thermal expansion of such a reinforcing member 50, 30 ppm / K or more and 80 ppm / K or less is preferable. For example, when CsI:Tl is used as the material for the conversion layer 30, the coefficient of thermal expansion is 50 ppm / K. In this case, examples of materials relatively close to the material of the conversion layer 30 include PVC (Polyvinyl Chloride) having a coefficient of thermal expansion of 60 ppm / K to 80 ppm / K, acrylic having a coefficient of thermal expansion of 70 ppm / K to 80 ppm / K, PET having a coefficient of thermal expansion of 65 ppm / K to 70 ppm / K, PC (Polycarbonate) having a coefficient of thermal expansion of 65 ppm / K, and Teflon having a coefficient of thermal expansion of 45 ppm / K to 70 ppm / K.

[0302] Furthermore, considering the above flexural modulus of elasticity, as the material of the reinforcing member 50, a material containing at least one of PET and PC is more preferable.

[0303] From the perspective of elasticity, the reinforcing member 50 preferably includes a material having a yield point. In addition, in the present embodiment, the so-called "yield point" refers to the phenomenon in which the stress temporarily drops sharply when the material is stretched. On the curve representing the relationship between stress and strain, it refers to the point at which the strain increases without an increase in stress, and it refers to the peak in the stress-strain curve during the tensile strength test of the material. As resins having a yield point, generally, hard and highly viscous resins, as well as soft, highly viscous resins with medium strength, can be cited. As hard and highly viscous resins, for example, PC can be cited. In addition, as soft, highly viscous resins with medium strength, for example, polypropylene can be cited.

[0304] The reinforcing member 50 of the present embodiment is a substrate made of plastic. The plastic that is the material of the reinforcing member 50 is preferably a thermoplastic resin for the above reasons, and at least one of PC, PET, styrene, acrylic, polyacetal, nylon, polypropylene, ABS (Acrylonitrile Butadiene Styrene), engineering plastics, and polyphenylene ether can be cited. In addition, the reinforcing member 50 preferably includes at least one of polypropylene, ABS, engineering plastics, PET, and polyphenylene ether among them, more preferably at least one of styrene, acrylic, polyacetal, and nylon, and further preferably at least one of PC and PET.

[0305] When the conversion layer 30 is formed by vapor deposition, as Figures 13 - 34 shown, the conversion layer 30 is formed to have an inclination in which the thickness gradually thins towards its outer edge. Hereinafter, the central region of the conversion layer 30, where the thickness is regarded as being substantially constant while ignoring manufacturing errors and measurement errors, is referred to as the central portion 30A. In addition, the outer peripheral region of the conversion layer 30 having a thickness of, for example, 90% or less with respect to the average thickness of the central portion 30A of the conversion layer 30 is referred to as the peripheral portion 30B. That is, the conversion layer 30 has an inclined surface inclined with respect to the sensor substrate 12 in the peripheral portion 30B.

[0306] As Figures 13 - 33 shown, an adhesive layer 60, a reflective layer 62, a bonding layer 64, a protective layer 65, and a bonding layer 48 can be provided between the conversion layer 30 and the reinforcing member 50.

[0307] The adhesive layer 60 covers the entire surface of the conversion layer 30 including the central portion 30A and the peripheral portion 30B of the conversion layer 30. The adhesive layer 60 has a function of fixing the reflective layer 62 on the conversion layer 30. The adhesive layer 60 preferably has light transmissibility. As the material of the adhesive layer 60, for example, acrylic adhesives, hot-melt adhesives, and silicone adhesives can be used. As acrylic adhesives, for example, polyurethane acrylate, acrylic resin acrylate, and epoxy acrylate can be cited. As hot-melt adhesives, for example, thermoplastic plastics such as EVA (ethylene-vinyl acetate copolymer resin), EAA (ethylene and acrylic acid copolymer resin), EEA (ethylene-ethyl acrylate copolymer resin), and EMMA (ethylene-methyl methacrylate copolymer) can be cited. The thickness of the adhesive layer 60 is preferably 2 μm or more and 7 μm or less. By setting the thickness of the adhesive layer 60 to 2 μm or more, the effect of fixing the reflective layer 62 on the conversion layer 30 can be fully exerted. Furthermore, the risk of forming an air layer between the conversion layer 30 and the reflective layer 62 can be suppressed. If an air layer is formed between the conversion layer 30 and the reflective layer 62, there may be multiple reflections in which the light emitted from the conversion layer 30 is repeatedly reflected between the air layer and the conversion layer 30 and between the air layer and the reflective layer 62. In addition, by setting the thickness of the adhesive layer 60 to 7 μm or less, a decrease in MTF (Modulation Transfer Function) and DQE (Detective Quantum Efficiency) can be suppressed.

[0308] The reflective layer 62 covers the entire surface of the adhesive layer 60. The reflective layer 62 has a function of reflecting the light converted by the conversion layer 30. The reflective layer 62 is preferably made of an organic material. As the material of the reflective layer 62, for example, white PET, TiO2, Al2O3, foamed white PET, polyester-based high-reflection sheets, and specularly reflective aluminum can be used. The thickness of the reflective layer 62 is preferably 10 μm or more and 40 μm or less.

[0309] The bonding layer 64 covers the entire surface of the reflective layer 62. The end of the bonding layer 64 extends to the surface of the sensor substrate 12. That is, the bonding layer 64 is bonded to the sensor substrate 12 at its end. The bonding layer 64 has a function of fixing the reflective layer 62 and the protective layer 65 on the conversion layer 30. As the material of the bonding layer 64, the same material as that of the adhesive layer 60 can be used, but preferably, the bonding force of the bonding layer 64 is greater than the bonding force of the adhesive layer 60.

[0310] The protective layer 65 has the function equivalent to that of the protective film 32 in the radiation detector 10 of the above-described respective embodiments, and covers the entire surface of the adhesive layer 64. That is, the protective layer 65 is provided to cover the entire conversion layer 30, and its end portion covers a part of the sensor substrate 12. The protective layer 65 functions as a moisture-proof film for preventing moisture from infiltrating into the conversion layer 30. As the material of the protective layer 65, for example, an organic film containing organic materials such as PET, PPS, OPP, PEN, and PI can be used. In addition, as the protective layer 65, a sheet of ALPET (registered trademark) can be used.

[0311] The reinforcing member 50 is disposed on the surface of the protective layer 65 with the adhesive layer 48 interposed therebetween. As the material of the adhesive layer 48, for example, the same material as that of the adhesive layer 60 and the adhesive layer 48 can be used.

[0312] In Figure 13 the example shown, the reinforcing member 50 extends in the regions corresponding to the central portion 30A and the peripheral portion 30B of the conversion layer 30, and the outer peripheral portion of the reinforcing member 50 is bent along the inclination in the peripheral portion 30B of the conversion layer 30. The reinforcing member 50 is bonded to the protective layer 65 via the adhesive layer 48 in both the region corresponding to the central portion 30A of the conversion layer 30 and the region corresponding to the peripheral portion 30B. In Figure 13 the example shown, the end portion of the reinforcing member 50 is disposed in the region corresponding to the peripheral portion 30B of the conversion layer 30.

[0313] Alternatively, as Figure 14 shown, the reinforcing member 50 may be provided only in the region corresponding to the central portion 30A of the conversion layer 30. In this case, the reinforcing member 50 is bonded to the protective layer 65 via the adhesive layer 48 in the region corresponding to the central portion 30A of the conversion layer 30.

[0314] Alternatively, as Figure 15 shown, when the reinforcing member 50 extends in the regions corresponding to the central portion 30A and the peripheral portion 30B of the conversion layer 30, the reinforcing member 50 does not have a bent portion along the inclination of the outer peripheral portion of the conversion layer 302. In this case, the reinforcing member 50 is bonded to the protective layer 65 via the adhesive layer 48 in the region corresponding to the central portion 30A of the conversion layer 30. In the region corresponding to the peripheral portion 30B of the conversion layer 30, a space corresponding to the inclination in the peripheral portion 30B of the conversion layer 30 is formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50.

[0315] Here, a flexible cable 112 is connected to a terminal 113 provided in a connection region on the outer peripheral portion of the sensor substrate 12. The sensor substrate 12 is connected to a control substrate (refer to the control substrate 110, Figure 47are connected. When the sensor substrate 12 is flexed, the flexible cable 112 may peel off from the sensor substrate 12 or be displaced. In this case, the operation of reconnecting the flexible cable 112 to the sensor substrate 12 needs to be performed again. The operation of reconnecting the flexible cable 112 to the sensor substrate 12 is called reprocessing. As Figures 13 - 15 shown, by arranging the end portion of the reinforcing member 50 more inwardly than the end portion of the conversion layer 30, reprocessing can be easily performed as compared with the case where the reinforcing member 50 extends to the vicinity of the connection area.

[0316] As Figures 16 - 19 shown, the reinforcing member 50 can be arranged such that its end portion is more outward than the end portion of the conversion layer 30 and is aligned with the end portions of the adhesive layer 64 and the protective layer 65 extending onto the sensor substrate 12. In addition, the positions of the end portions of the reinforcing member 50 and the end portions of the adhesive layer 64 and the protective layer 65 do not need to be exactly the same.

[0317] In Figure 16 the example shown, the reinforcing member 50 is bonded to the protective layer 65 via the adhesive layer 48 in the region corresponding to the central portion 30A of the conversion layer 30, and in the region corresponding to the peripheral portion 30B of the conversion layer 30 and the region further outside thereof, a space corresponding to the inclination in the peripheral portion 30B of the conversion layer 30 is formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50.

[0318] In Figure 17 the example shown, in the region corresponding to the peripheral portion 30B of the conversion layer 30 and the region further outside thereof, a filler 70 is provided in the space formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50. The material of the filler 70 is not particularly limited, and for example, a resin can be used. In addition, in Figure 17 the example shown, in order to fix the reinforcing member 50 to the filler 70, the adhesive layer 48 is provided in the entire region between the reinforcing member 50 and the filler 70.

[0319] The method for forming the filling member 70 is not particularly limited. For example, the adhesive layer 48 and the reinforcing member 50 may be sequentially formed on the conversion layer 30 covered by the adhesive layer 60, the reflective layer 62, the bonding layer 64, and the protective layer 65. Then, a fluid filling member 70 is injected into the space formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50, and the filling member 70 is cured. Additionally, for example, the conversion layer 30, the adhesive layer 60, the reflective layer 62, the bonding layer 64, and the protective layer 65 may be sequentially formed on the sensor substrate 12. Then, the filling member 70 is formed, and in a state where the conversion layer 30 and the filling member 70 covered by the adhesive layer 60, the reflective layer 62, the bonding layer 64, and the protective layer 65 are covered, the adhesive layer 48 and the reinforcing member 50 are sequentially formed.

[0320] Thus, by filling the filling member 70 into the space formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50, compared with the Figure 16 form shown, the peeling of the reinforcing member 50 from the conversion layer 30 (protective layer 65) can be suppressed. Furthermore, since the conversion layer 30 is structured to be fixed to the sensor substrate 12 by both the reinforcing member 50 and the filling member 70, the peeling of the conversion layer 30 from the sensor substrate 12 can be suppressed.

[0321] In Figure 18 the example shown, the outer peripheral portion of the reinforcing member 50 is bent along the inclination in the peripheral edge portion 30B of the conversion layer 30, and also covers the portion covered by the bonding layer 64 and the protective layer 65 on the sensor substrate 12. Additionally, the end portion of the reinforcing member 50 is aligned with the end portions of the bonding layer 64 and the protective layer 65. Also, the positions of the end portions of the reinforcing member 50 and the end portions of the bonding layer 64 and the protective layer 65 do not need to be exactly the same.

[0322] The end portions of the reinforcing member 50, the adhesive layer 48, the protective layer 65, and the bonding layer 64 are sealed by a sealing member 72. The sealing member 72 is preferably provided in a region that extends from the surface of the sensor substrate 12 to the surface of the reinforcing member 50 and does not cover the pixel region 15. As the material of the sealing member 72, resin can be used, and a thermoplastic resin is particularly preferred. Specifically, acrylic paste and polyurethane-based paste can be used as the sealing member 72. The reinforcing member 50 has a higher rigidity compared to the protective layer 65, and a restoring force that wants to eliminate the bending acts on the bent portion of the reinforcing member 50, whereby the protective layer 65 may peel off. By sealing the end portions of the reinforcing member 50, the adhesive layer 48, the protective layer 65, and the bonding layer 64 with the sealing member 72, the peeling of the protective layer 65 can be suppressed.

[0323] In Figure 19 the example shown, compared with Figure 17Similarly to the illustrated configuration, in the region corresponding to the peripheral portion 30B of the conversion layer 30 and the region further outside thereof, a filler 70 is provided in the space formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50. Further, in the region corresponding to the end portion of the conversion layer 30, another reinforcing member 50A is further laminated on the surface of the reinforcing member 50 with an adhesive layer 48A interposed therebetween. More specifically, the reinforcing member 50A is provided in a region straddling the end portion (outer edge, edge) of the conversion layer 30. The reinforcing member 50A may be made of the same material as the reinforcing member 50. In the radiation detector 10, the amount of deflection of the sensor substrate 12 is relatively large at the end portion of the conversion layer 30. In the region corresponding to the end portion of the conversion layer 30, by forming a laminated structure of the reinforcing members 50 and 50A, the effect of suppressing the deflection of the sensor substrate 12 at the end portion of the conversion layer 30 can be promoted.

[0324] As Figures 16 - 19 shown, when the end portion of the reinforcing member 50 is arranged to be more outside than the end portion of the conversion layer 30 and is set to be aligned with the end portions of the adhesive layer 64 and the protective layer 65, reprocessing can be easily performed as compared with the case where the reinforcing member 50 extends to the vicinity of the connection region.

[0325] Further, as Figures 20 - 23 shown, the reinforcing member 50 may be arranged such that its end portion is located more outside than the end portions of the adhesive layer 64 and the protective layer 65 extending onto the sensor substrate 12 and more inside than the end portion of the sensor substrate 12.

[0326] In Figure 20 the illustrated example, the reinforcing member 50 is bonded to the protective layer 65 via the adhesive layer 48 in the region corresponding to the central portion 30A of the conversion layer 30, and in the region corresponding to the peripheral portion 30B of the conversion layer 30 and the region further outside thereof, a space corresponding to the inclination in the peripheral portion 30B of the conversion layer 30 is formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50 and between the sensor substrate 12 and the reinforcing member 50.

[0327] In Figure 21 the illustrated example, the end portion of the reinforcing member 50 is supported by the spacer 46. That is, one end of the spacer 46 is connected to the first surface 14A of the base material 14 of the sensor substrate 12, and the other end of the spacer 46 is connected to the end portion of the reinforcing member 50 via the adhesive layer 47. By supporting the end portion of the reinforcing member 50 that extends while forming a space between the sensor substrate 12 with the spacer 46, peeling of the reinforcing member 50 can be suppressed. Further, the effect of suppressing deflection brought about by the reinforcing member 50 can be made to act on the vicinity of the end portion of the sensor substrate 12. Further, instead of providing the spacer 46 or in addition to providing the spacer 46, following Figure 17In the illustrated example, a filler is filled in the spaces formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50, and between the sensor substrate 12 and the reinforcing member 50.

[0328] In Figure 22 In the illustrated example, the outer peripheral portion of the reinforcing member 50 is bent along the inclination in the peripheral edge portion 30B of the conversion layer 30, and also covers the bonding layer 64 and the portion of the sensor substrate 12 covered by the protective layer 65 on the sensor substrate 12 outside thereof. That is, the ends of the bonding layer 64 and the protective layer 65 are sealed by the reinforcing member 50. The portion of the reinforcing member 50 extending on the sensor substrate 12 is bonded to the sensor substrate 12 via the bonding layer 48. By covering the ends of the bonding layer 64 and the protective layer 65 with the reinforcing member 50 in this way, peeling of the protective layer 65 can be suppressed. Additionally, it is also possible to seal the end of the reinforcing member 50 using a sealing member 72 by imitating the example Figure 18 described.

[0329] In Figure 23 In the illustrated example, in a form where the end of the reinforcing member 50 is supported by the spacer 46, another reinforcing member 50A is further laminated via the bonding layer 48A in a region of the surface of the reinforcing member 50 corresponding to the end of the conversion layer 30. More specifically, the reinforcing member 50A is provided in a region straddling the end (outer edge, edge) of the conversion layer 30. The reinforcing member 50A may be made of the same material as the reinforcing member 50. In the radiation detector 10, the amount of deflection of the sensor substrate 12 at the end of the conversion layer 30 is relatively large. In the region corresponding to the end of the conversion layer 30, by forming a laminated structure of the reinforcing members 50 and 50A, the effect of suppressing the deflection of the sensor substrate 12 at the end of the conversion layer 30 can be promoted. Additionally, instead of providing the spacer 46, it is also possible to fill the space formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50, and between the sensor substrate 12 and the reinforcing member 50 with a filler 70 by imitating the example Figure 17 shown.

[0330] It is possible to Figures 24 - 28 arrange the reinforcing member 50 such that its end is aligned with the end of the sensor substrate 12 as shown. Additionally, the positions of the ends of the reinforcing member 50 and the sensor substrate 12 do not need to be exactly the same.

[0331] In Figure 24In the illustrated example, the reinforcing member 50 is bonded to the protective layer 65 via the adhesive layer 48 in a region corresponding to the central portion 30A of the conversion layer 30. In a region corresponding to the peripheral portion 30B of the conversion layer 30 and a region further outside thereof, a space corresponding to the inclination in the peripheral portion 30B of the conversion layer 30 is formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50 and between the sensor substrate 12 and the reinforcing member 50.

[0332] In Figure 25 the illustrated example, the end portion of the reinforcing member 50 is supported by the spacer 46. That is, one end of the spacer 46 is connected to the flexible cable 112 provided at the end portion of the sensor substrate 12, and the other end of the spacer 46 is connected to the end portion of the reinforcing member 50 via the adhesive layer 47. By supporting the end portion of the reinforcing member 50 that forms a space while extending between the sensor substrates 12 with the spacer 46, peeling of the reinforcing member 50 can be suppressed. In addition, the flexure suppression effect brought about by the reinforcing member 50 can be made to act near the end portion of the sensor substrate 12.

[0333] In Figure 26 the illustrated example, the filling member 70 is filled in the space formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50 and between the sensor substrate 12 and the reinforcing member 50. In the present embodiment, the connection portion between the flexible cable 112 and the terminal 113 is covered with the filling member 70. Thus, by filling the filling member 70 in the space formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50 and between the sensor substrate 12 and the reinforcing member 50, compared with Figure 24 the illustrated form, peeling of the reinforcing member 50 from the conversion layer 30 (protective layer 65) can be suppressed. Further, since the conversion layer 30 has a structure fixed to the sensor substrate 12 by both the reinforcing member 50 and the filling member 70, peeling of the conversion layer 30 from the sensor substrate 12 can be suppressed. In addition, by covering the connection portion between the flexible cable 112 and the terminal 113 with the filling member 70, peeling of the flexible cable 112 can be suppressed.

[0334] In Figure 27In the illustrated example, the outer peripheral portion of the reinforcing member 50 is bent along the inclination in the peripheral edge portion 30B of the conversion layer 30, and also covers the portion covered by the adhesive layer 64 and the protective layer 65 on the sensor substrate 12, the substrate outside thereof, and the connection portion between the terminal 113 and the flexible cable 112. The portions of the reinforcing member 50 extending on the sensor substrate 12 and the flexible cable 112 are bonded to the sensor substrate 12 and the flexible cable 112 via the adhesive layer 48, respectively. Since the connection portion between the flexible cable 112 and the terminal 113 is covered by the flexure reinforcing member 50, peeling of the flexible cable 112 can be suppressed. In addition, since it is assumed that a control substrate carrying electronic components is connected to the other end of the flexible cable 112, a relatively large flexure may occur in the sensor substrate 1 at the connection portion between the flexible cable 112 and the terminal 113. Since the connection portion between the flexible cable 112 and the terminal 113 is covered by the reinforcing member 50, flexure of the sensor substrate 12 at this portion can be suppressed.

[0335] In Figure 28 the illustrated example, the space formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50 and between the sensor substrate 12 and the reinforcing member 50 is filled with a filler 70. In addition, in the region corresponding to the end portion of the conversion layer 30, another flexure reinforcing member 50A is further laminated on the surface of the reinforcing member 50 with an adhesive layer 48A interposed therebetween. More specifically, the reinforcing member 50A is provided in a region straddling the end portion (outer edge, edge) of the conversion layer 30. The reinforcing member 50A may be made of the same material as the reinforcing member 50. In the radiation detector 10, the amount of flexure of the sensor substrate 12 is relatively large at the end portion of the conversion layer 30. In the region corresponding to the end portion of the conversion layer 30, by forming a laminated structure of the reinforcing members 50 and 50A, the effect of suppressing the flexure of the sensor substrate 12 at the end portion of the conversion layer 30 can be promoted.

[0336] In addition, it may be as Figures 29 - 33 shown, and the reinforcing member 50 is provided such that its end portion is located at a position more outside than the end portion of the sensor substrate 12.

[0337] In Figure 29 the illustrated example, the reinforcing member 50 is bonded to the protective layer 65 via the adhesive layer 48 in the region corresponding to the central portion 30A of the conversion layer 30, and in the region corresponding to the peripheral edge portion 30B of the conversion layer 30 and the region further outside thereof, a space corresponding to the inclination in the peripheral edge portion 30B of the conversion layer 30 is formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50 and between the sensor substrate 12 and the reinforcing member 50.

[0338] In Figure 30In the illustrated example, the end portion of the reinforcing member 50 is supported by the spacer 46. That is, one end of the spacer 46 is connected to the flexible cable 112 provided at the end portion of the sensor substrate 12, and the other end of the spacer 46 is connected to the end portion of the reinforcing member 50 via the adhesive layer 47. By supporting the end portion of the reinforcing member 50 that extends while forming a space between the sensor substrate 12 with the spacer 46, peeling of the reinforcing member 50 can be suppressed. In addition, the flexure suppressing effect brought by the reinforcing member 50 can be made to act near the end portion of the sensor substrate 12.

[0339] In Figure 31 the illustrated example, the space formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50 and between the sensor substrate 12 and the reinforcing member 50 is filled with the filler 70. In the present embodiment, the connection portion between the flexible cable 112 and the terminal 113 is covered by the filler 70. Thus, by filling the space formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50 and between the sensor substrate 12 and the reinforcing member 50 with the filler 70, compared with Figure 29 the illustrated form, peeling of the reinforcing member 50 from the conversion layer 30 (protective layer 65) can be suppressed. Furthermore, since the conversion layer 30 has a structure fixed to the sensor substrate 12 by both the reinforcing member 50 and the filler 70, peeling of the conversion layer 30 from the sensor substrate 12 can be suppressed. In addition, by covering the connection portion between the flexible cable 112 and the terminal 113 with the filler 70, peeling of the flexible cable 112 can be suppressed.

[0340] In Figure 32 the illustrated example, the outer peripheral portion of the reinforcing member 50 is bent along the inclination in the peripheral edge portion 30B of the conversion layer 30, and also covers the portion covered by the adhesive layer 64 and the protective layer 65 on the sensor substrate 12, the substrate outside thereof, and the connection portion between the terminal 113 and the flexible cable 112. The portions of the reinforcing member 50 extending on the sensor substrate 12 and the flexible cable 112 are bonded to the sensor substrate 12 and the flexible cable 112 via the adhesive layer 48, respectively. By covering the connection portion between the flexible cable 112 and the terminal 113 with the reinforcing member 50, peeling of the flexible cable 112 can be suppressed. In addition, since it is assumed that a control substrate carrying an electronic component is connected to the other end of the flexible cable 112, relatively large flexure may occur in the sensor substrate 12 at the connection portion between the flexible cable 112 and the terminal 113. By covering the connection portion between the flexible cable 112 and the terminal 113 with the reinforcing member 50, flexure of the sensor substrate 12 at this portion can be suppressed.

[0341] In Figure 33In the illustrated example, a filler 70 is filled in the spaces formed between the conversion layer 30 (protective layer 65) and the reinforcing member 50, and between the sensor substrate 12 and the reinforcing member 50. Further, in a region corresponding to the end of the conversion layer 30, another reinforcing member 50A is laminated on the surface of the reinforcing member 50 with a bonding layer 48A interposed therebetween. More specifically, the reinforcing member 50A is provided in a region straddling the end (outer edge, margin) of the conversion layer 30. The reinforcing member 50A may be made of the same material as the reinforcing member 50. In the radiation detector 10, at the end of the conversion layer 30, the amount of flexure of the sensor substrate 12 is relatively large. In a region corresponding to the end of the conversion layer 30, by forming a laminated structure of the reinforcing members 50 and 50A, the effect of suppressing the flexure of the sensor substrate 12 at the end of the conversion layer 30 can be promoted.

[0342] As described above, in the manufacturing process of the radiation detector 10, a flexible sensor substrate 12 is attached to a support 200 such as a glass substrate with a release layer 202 interposed therebetween. After the conversion layer 30 is laminated on the sensor substrate 12, the support 200 is peeled off from the sensor substrate 12. At this time, the flexible sensor substrate 12 is flexed, and thus the pixels 16 formed on the sensor substrate 12 may be damaged. By laminating the reinforcing member 50 on the conversion layer 30 in the form exemplified Figures 13 - 33 as above before peeling the support 200 from the sensor substrate 12, the flexure of the sensor substrate 12 when the support is peeled off from the sensor substrate 12 can be suppressed, and the risk of damage to the pixels 16 can be reduced.

[0343] In addition, the reinforcing member 50 is not limited to a single layer (monolayer), and may be composed of multiple layers. For example, in Figure 34 the illustrated example, the radiation detector 10 is shown in a form of a three-layer multi-film in which the reinforcing member 50 is formed by laminating a first reinforcing member 50B, a second reinforcing member 50C, and a third reinforcing member 50D in this order from the side closer to the conversion layer 30.

[0344] When the reinforcing member 50 is formed of multiple layers, it is preferable that each layer included in the reinforcing member 50 has a different function. For example, in Figure 34 one example shown, by setting the first reinforcing member 50B and the third reinforcing member 50D as layers having an antistatic function of non-conductivity, and setting the second reinforcing member 50C as a conductive layer, the reinforcing member 50 can be provided with an electromagnetic shielding function. As the first reinforcing member 50B and the third reinforcing member 50D in this case, for example, an antistatic film such as a film using an antistatic coating "COLCOAT" (trade name: manufactured by COLCOAT Co., Ltd.) can be cited. In addition, as the second reinforcing member 50C, for example, a conductive sheet, a conductive mesh sheet such as Cu, etc. can be cited.

[0345] For example, when the reading method of the radiation detector 10 is the ISS method, a control substrate 110, a power supply unit 108, etc. may be provided on the conversion layer 30 side (see Figure 52 ). However, when the reinforcing member 50 has an antistatic function in this way, electromagnetic noise from the control substrate 110 and the power supply unit 108 can be shielded.

[0346] In addition, Figure 35 is a top view showing an example of the structure of the reinforcing member 50. The reinforcing member 50 may have a plurality of through holes 50H on its main surface. The size and pitch of the through holes 50H are determined so that the desired rigidity can be obtained in the reinforcing member 50.

[0347] By having a plurality of through holes 50H in the reinforcing member 50, the air introduced into the joint surface between the reinforcing member 50 and the conversion layer 30 can be discharged from the through holes 50H. Thereby, generation of bubbles in the joint surface between the reinforcing member 50 and the conversion layer 30 can be suppressed.

[0348] In the absence of means for discharging the air introduced into the joint surface between the reinforcing member 50 and the conversion layer 3, bubbles may be generated in the above joint surface. For example, if the bubbles generated in the above joint surface expand due to the heat during the operation of the radiation image capturing device 1, the close contact between the reinforcing member 50 and the conversion layer 30 will be reduced. As a result, it may not be possible to fully exhibit the effect of suppressing flexure brought about by the reinforcing member 50. By using the reinforcing member 50 having a plurality of through holes 50H as Figure 35 shown, generation of bubbles in the joint surface between the reinforcing member 50 and the conversion layer 30 can be suppressed as described above. Therefore, the close contact between the reinforcing member 50 and the conversion layer 30 can be maintained, and the effect of suppressing flexure brought about by the reinforcing member 50 can be maintained.

[0349] Figure 36 is a perspective view showing another example of the structure of the reinforcing member 50. In the example shown in Figure 36 , the reinforcing member 50 has an uneven structure on the joint surface with the conversion layer 30. The uneven structure may be configured to include a plurality of grooves 63 arranged in parallel with each other as Figure 36 shown. The reinforcing member 50, for example, as Figure 37 shown, joins the surface having the uneven structure with a plurality of grooves 63 to the conversion layer 30 covered with the reflective layer 62. By having the uneven structure on the joint surface between the reinforcing member 50 and the conversion layer 30 in this way, the air introduced into the joint portion between the reinforcing member 50 and the conversion layer 30 can be discharged from the grooves 63. Thereby, similar to the form shown in Figure 35 , generation of bubbles in the joint surface between the reinforcing member 50 and the conversion layer 30 can be suppressed. Thereby, the close contact between the reinforcing member 50 and the conversion layer 30 can be maintained, and the effect of suppressing flexure brought about by the reinforcing member 50 can be maintained.

[0350] Figure 38 and Figure 39 are respectively top views showing other examples of the structure of the reinforcing member 50. As shown in Figure 38 and Figure 39 the reinforcing member 50 is divided into a plurality of segments 54. The reinforcing member 50 can be divided into a plurality of segments 54( Figure 38 as shown Figure 54 5 to 5411) arranged in one direction. In addition, the reinforcing member 50 can also be divided into a plurality of segments 54( Figure 39 as shown Figure 54 1 to 544) arranged longitudinally and transversely.

[0351] The larger the area of the reinforcing member 50, the easier it is to generate air bubbles at the joint surface between the reinforcing member 50 and the conversion layer 30. By dividing the reinforcing member 50 into a plurality of segments 54 as shown in Figure 38 and Figure 39 the generation of air bubbles in the joint surface between the reinforcing member 50 and the conversion layer 30 can be suppressed. Thereby, the close contact between the reinforcing member 50 and the conversion layer 30 can be maintained, and the flexure suppression effect brought by the reinforcing member 50 can be maintained.

[0352] In addition, a reinforcing member 52 can be provided on the side opposite to the side of the stress neutral plane adjusting member 36 that is in contact with the sensor substrate 12 (second surface 14B). Figures 40 - 44 are respectively cross-sectional views showing examples of the arrangement form of the reinforcing member 52.

[0353] In Figures 40 - 44 the shown example, the reinforcing member 52 is laminated via an adhesive layer 51 on the surface opposite to the surface on the sensor substrate 12 side of the stress neutral plane adjusting member 36. The reinforcing member 52 can be made of the same material as the reinforcing member 50. When the radiation detector 10 is used in the ISS mode, in order to minimize the area of the portion where the reinforcing member 52 overlaps with the pixel region 15, the reinforcing member 52 is preferably provided only at the outer periphery of the sensor substrate 12. That is, the reinforcing member 52 can be as shown in Figures 40 - 44 a ring shape having an opening 61 in the portion corresponding to the pixel region 15. Thus, by forming a laminated structure of the stress neutral plane adjusting member 36 and the reinforcing member 52 at the outer periphery of the sensor substrate 12, the rigidity of the outer periphery of the sensor substrate 12 where flexure is likely to occur can be enhanced.

[0354] In Figures 40 - 42In the example shown, the reinforcing member 52 is provided in a region straddling the end (outer edge, edge) of the conversion layer 30. In the radiation detector 10, the amount of deflection of the sensor substrate 12 is relatively large at the end of the conversion layer 30. In the region corresponding to the end of the conversion layer 30, by forming a laminated structure of the stress neutral plane adjustment member 36 and the reinforcing member 52, the effect of suppressing the deflection of the sensor substrate 12 at the end of the conversion layer 30 can be promoted.

[0355] When the radiation detector 10 is used in the ISS mode, if Figure 40 as shown, a part of the reinforcing member 52 overlaps with the pixel region 15, depending on the material of the reinforcing member 52, it may affect the image. Therefore, when a part of the reinforcing member 52 overlaps with the pixel region 15, plastic is preferably used as the material of the reinforcing member 52.

[0356] As Figure 41 and Figure 42 shown, it is most preferable that the reinforcing member 52 straddles the end (outer edge, edge) of the conversion layer 30 and does not overlap with the pixel region 15 (that is, the end of the opening 61 of the reinforcing member 52 is disposed outside the pixel region 15). In Figure 41 the example shown, the position of the end of the opening 61 of the reinforcing member 52 and the position of the end of the pixel region 15 are substantially the same. In Figure 42 the example shown, the end of the opening 61 of the reinforcing member 52 is disposed between the end of the pixel region 15 and the end of the conversion layer 30.

[0357] In addition, the position of the end of the opening 61 of the reinforcing member 52 may be substantially the same as the position of the end of the conversion layer 30 as Figure 43 shown, or it may be disposed more outside than the end of the conversion layer 30 as Figure 44 shown. In this case, since the reinforcing member 52 does not form a structure straddling the end (outer edge, edge) of the conversion layer 30, the effect of suppressing the deflection of the sensor substrate 12 at the end of the conversion layer 30 may be reduced. However, by forming a laminated structure of the stress neutral plane adjustment member 36 and the reinforcing member 52 on the outer periphery of the sensor substrate 12 where the connection portion of the flexible cable 112 and the terminal 113 is located, the effect of suppressing the deflection of the sensor substrate 12 at the connection portion of the flexible cable 112 and the terminal 113 can be maintained.

[0358] In addition, in the radiation detector 10 of each of the above embodiments, a form in which the sensor substrate 12 (base material 14) and the stress neutral plane adjustment member 36 have the same size has been described, but the sensor substrate 12 and the stress neutral plane adjustment member 36 may have different sizes.

[0359] For example, when the radiation detector 10 is used in the radiation image capturing apparatus 1, the radiation detector 10 may be fixed and used in a housing 120 (refer to Figure 7 etc.). In such a case, for example, as shown in an example of Figure 45A , the stress neutral plane adjustment member 36 may be made larger than the sensor substrate 12, and a baffle or the like may be provided, and the radiation detector 10 may be fixed using a part such as the baffle. For example, holes may be provided in the baffle portion of the stress neutral plane adjustment member 36, and a screw passing through the holes may be used to fix the baffle to the housing 120 (refer to Figure 7 etc.).

[0360] In addition, the form in which the stress neutral plane adjustment member 36 is made larger than the sensor substrate 12 is not limited to the form shown in Figure 45A . The stress neutral plane adjustment member 36 may be composed of a plurality of stacked layers, and a part of the layers may be made larger than the sensor substrate 12. For example, as shown in Figure 45B , the stress neutral plane adjustment member 36 may be a two-layer structure having a first layer 36D having a size similar to that of the sensor substrate 12 (base material 14) and a second layer 36E larger than the sensor substrate 12. The first layer 36D and the second layer 36E are bonded by a double-sided tape or an adhesive layer (not shown). As the first layer 36D, for example, it is preferably formed of the same material as the above-described stress neutral plane adjustment member 36 and has the same properties as the stress neutral plane adjustment member 36. In addition, the second layer 36E is bonded to the second surface 14B of the base material 14 by a double-sided tape or an adhesive layer (not shown). As the second layer 36E, for example, ALPET (registered trademark) can be used. In addition, when the stress neutral plane adjustment member 36 is composed of a plurality of layers, it may be the opposite of the form shown in Figure 45B , and as shown in Figure 45C , the first layer 36D may be bonded to the second surface 14B of the base material 14.

[0361] As described above, when the radiation detector 10 is fixed to the housing 120 (refer to Figure 7 etc.) using a baffle or the like provided on the stress neutral plane adjustment member 36, the fixing may sometimes be performed in a state where the baffle portion is bent. The thinner the thickness, the easier it is for the baffle portion of the stress neutral plane adjustment member 36 to bend, and only the baffle portion can be bent without affecting the radiation detector 10 main body. Therefore, when bending the baffle portion or the like, it is preferably composed of a plurality of stacked layers as shown in an example of Figure 45B and Figure 45C , and a part of the layers may be made larger than the sensor substrate 12.

[0362] Alternatively, as in the example shown in Figure 46 , contrary to the radiation detector 10 described above in Figures 45A - 45C , the stress neutral plane adjustment member 36 can be made smaller than the sensor substrate 12. By positioning the end of the sensor substrate 12 at a location more external than the end of the stress neutral plane adjustment member 36, for example, when assembling the radiation detector 10 into the housing 120 (refer to Figure 7 etc.), since it is easier to confirm the position of the end of the sensor substrate 12, the positioning accuracy can be improved. Additionally, it is not limited to the Figure 46 shown configuration. As long as at least a part of the end of the sensor substrate 12 (base material 14) is located at a position more external than the force neutral plane adjustment member 36, the same effect can be obtained, which is thus preferred.

[0363] Furthermore, an example of the radiation image capturing device 1 that houses the radiation detector 10 within the housing 120 will be described with reference to Figures 47 - 53 . Figures 47 - 53 These are diagrams respectively showing other structural examples of the radiation image capturing device 1.

[0364] In the example shown in Figure 47 , an example of an ISS method radiation image capturing device 1 is shown in the same manner as the radiation image capturing device 1 shown above in Figure 7 . Additionally, in the example shown in Figure 48 , an example of a PSS method radiation image capturing device 1 is shown. In the examples shown in Figure 47 and Figure 48 , a structure is exemplified in which the radiation detector 10, the control substrate 110, and the power supply unit 108 are arranged side by side in the horizontal direction in the figure.

[0365] Moreover, in the examples shown in Figure 47 and Figure 48 , a protective layer 117 is further provided between the radiation detector 10 and the inner wall of the imaging surface 120A of the housing 120. In other words, the protective layer 117 is further provided on the side of the imaging surface 120A where the incident radiation R enters. As the protective layer 117, moisture-proof films such as ALPET (registered trademark) sheets obtained by laminating aluminum by bonding aluminum foil to an insulating sheet (film), parylene (registered trademark) films, and insulating sheets such as polyethylene terephthalate can be used. The protective layer 117 has a moisture-proof function and an antistatic function with respect to the pixel region 15. Therefore, the protective layer 117 preferably covers at least the entire surface on the incident radiation R side of the pixel region 15, and preferably covers the entire surface of the sensor substrate 12 on the incident radiation R side.

[0366] In addition, in Figure 47 and Figure 48The figure shows a configuration in which both the power supply unit 108 and the control substrate 110 are provided on one side of the radiation detector 10, specifically on one side of one side of the rectangular pixel region 15. However, the positions where the power supply unit 108 and the control substrate 110 are provided are not limited to Figure 47 and Figure 48 the configurations shown. For example, the power supply unit 108 and the control substrate 110 can be dispersedly provided on each of the two opposite sides of the radiation detector 10, or can be dispersedly provided on each of the two adjacent sides.

[0367] In addition, as in the examples such as Figure 47 and Figure 48 shown, when the radiation detector 10, the control substrate 110, and the power supply unit 108 are arranged and configured in a direction crossing the direction (lamination direction P) in which the sensor substrate 12 and the conversion layer 30 are laminated, the thicknesses of the portions of the housing 120 where the power supply unit 108 and the control substrate 110 are provided respectively and the portion of the housing 120 where the radiation detector 10 is provided can be different.

[0368] As in the examples such as Figure 48 shown, the power supply unit 108 and the control substrate 110 each mostly have a thickness thicker than that of the radiation detector 10. In such a case, as in the examples such as Figure 49 shown, the thickness of the portion of the housing 120 where the radiation detector 10 is provided can be made thinner than the thickness of the portions of the housing 120 where the power supply unit 108 and the control substrate 110 are provided respectively. In addition, when the thicknesses of the portions of the housing 120 where the power supply unit 108 and the control substrate 110 are provided respectively and the portion of the housing 120 where the radiation detector 10 is provided are different, if there is a step at the boundary portion between the two portions, it may cause a sense of discomfort to the subject who comes into contact with the boundary portion 120B, etc. Therefore, the configuration of the boundary portion 120B is preferably in a state having an inclination.

[0369] Thereby, an extremely thin type of movable type electronic cassette corresponding to the thickness of the radiation detector 10 can be formed.

[0370] In addition, for example, in this case, the materials of the housing 120 of the portions where the power supply unit 108 and the control substrate 110 are provided respectively and the housing 120 of the portion where the radiation detector 10 is provided can be different. Furthermore, for example, the portions of the housing 120 where the power supply unit 108 and the control substrate 110 are provided respectively and the portion of the housing 120 where the radiation detector 10 is provided can be configured as separate bodies.

[0371] In addition, as described above, the housing 120 preferably has a low absorption rate of radiation R, particularly X-rays, and high rigidity, and is preferably made of a material having a sufficiently high elastic modulus. However, it can also be asFigure 50 As in the example shown, for the portion 120C corresponding to the imaging surface 120A of the housing 120, it is made of a material with a low absorption rate of the radiation R, high rigidity, and a sufficiently high elastic modulus. For the other portions, it is made of a material different from that of the portion 120C, for example, a material with an elastic modulus lower than that of the portion 120C.

[0372] In addition, it can also be as Figure 51 shown in the example, the radiation detector 10 is in contact with the inner wall surface of the housing 120. In this case, the radiation detector 10 and the inner wall surface of the housing 120 can be bonded via an adhesive layer, or can be in contact only without an adhesive layer. Thus, by the radiation detector 10 being in contact with the inner wall surface of the housing 120, the rigidity of the radiation detector 10 can be more ensured.

[0373] In addition, in Figure 52 the example shown, similar to the radiation image imaging device 1 shown above Figure 8 , an example of the radiation image imaging device 1 of the ISS method is shown. In addition, in Figure 53 the example shown, an example of the radiation image imaging device 1 of the PSS method is shown. In Figure 52 and Figure 53 the examples shown, the sensor substrate 12, the control substrate 110, and the power supply unit 108 are provided with the sheet 116 and the base 118 interposed therebetween. According to this structure, compared with the case where the radiation detector 10, the control substrate 110, and the power supply unit 108 are arranged side by side horizontally in the figure (refer to Figures 47 - 51 ), the size of the radiation image imaging device 1 in a plan view can be reduced.

[0374] In addition, in each of the above-described embodiments, the form in which the position of the stress neutral plane 37 is preferably set to the position of the interface 19 has been described, but the preferred position of the stress neutral plane 37 is not limited to the position of the interface 19. When the adhesion between the conversion layer 30 and the sensor substrate 12 is relatively high, before the conversion layer 30 is peeled off from the sensor substrate 12, the TFT 20 and the sensor unit 22, etc. in the sensor substrate 12 may be damaged. Thus, in the case where the adhesion between the conversion layer 30 and the sensor substrate 12 is relatively high, etc., preferably as Figure 54 shown, by the stress neutral plane adjustment member 36, the position of the stress neutral plane 37 is set to a position inside the sensor substrate side 12 side within the above-mentioned predetermined range.

[0375] The disclosures of Japanese Patent Application Nos. 2018-051689, 2018-219695, and 2019-022125 are incorporated herein by reference in their entirety.

[0376] All documents, patent applications, and technical standards described in this specification are incorporated herein by reference to the same extent as if each individual document, patent application, and technical standard were specifically and individually indicated to be incorporated by reference.

Claims

1. A radiation detector, comprising: A sensor substrate, which includes a flexible base material, and a layer provided on the first surface of the base material and formed with a plurality of pixels for accumulating charges generated corresponding to light converted from radiation; A conversion layer, which is provided on the side opposite to the side where the base material is provided in the layer where the pixels are formed, and converts radiation into the light; And A stress neutral plane adjustment member, which is provided on the second surface side opposite to the first surface of the base material, The stress neutral plane adjustment member adjusts the position of the stress neutral plane, which is a plane where the stress in the direction crossing the stacking direction generated when the radiation detector is bent becomes 0, with respect to the stacking direction, by applying a load to the stacking direction of the sensor substrate and the conversion layer; The stress neutral plane adjustment member adjusts the position of the stress neutral plane from the interface, which is the surface of the conversion layer facing the sensor substrate, to a predetermined range in the stacking direction of the sensor substrate and the conversion layer.

2. The radiation detector according to claim 1, wherein The predetermined range is a range shorter than the distance between the interface and the stress neutral plane in the case where the stress neutral plane adjustment member is not provided.

3. The radiation detector according to claim 1 or 2, wherein The stress neutral plane adjustment member is provided at least in an area covering the area where the sensor substrate and the conversion layer face each other.

4. The radiation detector according to claim 1, wherein The flexural elastic modulus of the stress neutral plane adjustment member is 150 MPa or more and 2500 MPa or less.

5. The radiation detector according to claim 1, wherein The material of the stress neutral plane adjustment member includes at least one of polycarbonate, polyethylene terephthalate, and low-density polyethylene.

6. The radiation detector according to claim 1, wherein The ratio of the thermal expansion coefficient of the stress neutral plane adjustment member to the thermal expansion coefficient of the conversion layer is 0.5 or more and 4 or less.

7. The radiation detector according to claim 1, wherein The thermal expansion coefficient of the stress neutral plane adjustment member is 30 ppm / K or more and 200 ppm / K or less.

8. The radiation detector according to claim 1, wherein The radiation detector further comprises: An adhering layer, which is provided at the interface and is in contact with the sensor substrate and the conversion layer.

9. The radiation detector according to claim 1, wherein The radiation detector further comprises: A buffer layer, which is provided between the sensor substrate and the conversion layer to buffer the difference between the thermal expansion coefficient of the conversion layer and the thermal expansion coefficient of the sensor substrate.

10. The radiation detector according to claim 1, wherein The stress neutral plane adjustment member includes a plurality of films with different functions stacked in the stacking direction.

11. The radiation detector according to claim 10, wherein The plurality of films include a stress neutral plane adjustment film and an antistatic film.

12. The radiation detector according to claim 11, wherein the charge prevention film is provided closer to the second surface side than the stress neutral plane adjustment film.

13. The radiation detector according to claim 10, wherein the plurality of films include a stress neutral plane adjustment film and a moisture-proof film.

14. The radiation detector according to claim 13, wherein the moisture-proof film is provided closer to the second surface side than the stress neutral plane adjustment film.

15. The radiation detector according to claim 1, wherein the substrate is made of resin and has a microparticle layer containing inorganic microparticles with an average particle diameter of 0.05 μm or more and 2.5 μm or less.

16. The radiation detector according to claim 15, wherein the substrate has the microparticle layer on the second surface side.

17. The radiation detector according to claim 15 or 16, wherein the microparticles contain an element having an atomic number larger than that of the element constituting the substrate and an atomic number of 30 or less.

18. The radiation detector according to claim 1, wherein the thermal expansion coefficient of the substrate at 300°C to 400°C is 20 ppm / K or less.

19. The radiation detector according to claim 1, wherein the substrate in a state with a thickness of 25 μm satisfies at least one of the following conditions: the thermal shrinkage rate in the longitudinal MD direction at 400°C is 0.5% or less, and the elastic modulus at 500°C is 1 GPa or more.

20. The radiation detector according to claim 1, wherein the rigidity of the stress neutral plane adjustment member is higher than that of the substrate.

21. The radiation detector according to claim 1, wherein the conversion layer contains CsI.

22. The radiation detector according to claim 1, wherein a reinforcing member is further provided on the conversion layer side of the laminate formed by laminating the conversion layer on the sensor substrate.

23. The radiation detector according to claim 22, wherein the reinforcing member extends over a range wider than the range where the conversion layer extends.

24. The radiation detector according to claim 22, wherein the reinforcing member extends in regions corresponding to the central portion and the peripheral portion of the conversion layer.

25. The radiation detector according to claim 23 or 24, wherein the peripheral portion of the conversion layer has an inclination such that the thickness becomes thinner as it approaches the outer periphery of the conversion layer, and the reinforcing member is provided along the inclination of the peripheral portion of the conversion layer.

26. The radiation detector according to claim 23, wherein the peripheral portion of the conversion layer has an inclination such that the thickness becomes thinner as it approaches the outer periphery of the conversion layer, and a space corresponding to the inclination of the peripheral portion of the conversion layer is formed between the reinforcing member and the conversion layer.

27. The radiation detector according to claim 26, wherein the space formed between the reinforcing member and the conversion layer is filled with a filler.

28. The radiation detector according to claim 23, wherein The end of the reinforcing member is supported by a spacer.

29. The radiation detector according to claim 23, wherein a peripheral portion of the conversion layer has an inclination such that the thickness becomes thinner as it approaches the outer periphery of the conversion layer, the reinforcing member is provided along the inclination of the peripheral portion of the conversion layer, and the end is sealed by a sealing member.

30. The radiation detector according to claim 1, wherein a reinforcing member is further provided on a surface of the sensor substrate of the stress neutral plane adjustment member on the side opposite thereto.

31. The radiation detector according to claim 30, wherein the reinforcing member is provided in a region straddling the end of the conversion layer, and is provided in a region not overlapping with the pixel region where the plurality of pixels are provided.

32. A radiation image capturing device, comprising: the radiation detector according to any one of claims 1 to 2, claims 4 to 16, claims 18 to 24, and claims 26 to 31; a control unit that outputs a control signal for reading out charges accumulated in the plurality of pixels; a drive unit that outputs a drive signal for reading out charges from the plurality of pixels in response to the control signal; and a signal processing unit that inputs an electrical signal corresponding to the charges read out from the plurality of pixels, and generates and outputs image data corresponding to the input electrical signal.

33. The radiation image capturing device according to claim 32, wherein the control unit and the radiation detector are arranged in a direction intersecting the stacking direction in which the base material, the layer in which the plurality of pixels are formed, and the conversion layer are arranged in the radiation detector.

34. The radiation image capturing device according to claim 32, wherein the radiation image capturing device further comprises: a power supply unit that supplies power to at least one of the control unit, the drive unit, and the signal processing unit, the power supply unit, the control unit, and the radiation detector are arranged in a direction intersecting the stacking direction in which the sensor substrate, the conversion layer, and the stress neutral plane adjustment member are arranged in the radiation detector.

35. The radiation image capturing device according to claim 32, wherein the radiation image capturing device further comprises: a housing having an irradiation surface irradiated with radiation, and housing the radiation detector in a state where the sensor substrate among the sensor substrate and the conversion layer in the radiation detector faces the irradiation surface.

Images