Wafer post-processing system and method

By combining a dual-moving mechanism and a gas jet device, the problem of incomplete cleaning and drying of the wafer surface is solved, achieving full-coverage cleaning and drying of the wafer surface, improving the processing effect and simplifying system safety.

CN110391157BActive Publication Date: 2026-06-26TSINGHUA UNIVERSITY

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
TSINGHUA UNIVERSITY
Filing Date
2019-06-14
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

During wafer manufacturing, the wafer surface cannot be completely cleaned or dried at the contact points with the fixture, which affects the overall processing effect.

Method used

A dual-moving mechanism is used to lift the wafer from the cleaning solution. The first moving mechanism is fixed below the liquid surface and lifts the wafer, while the second moving mechanism is fixed above the liquid surface and continues to lift the wafer. Combined with a gas jetting device, drying gas is sprayed onto the wafer surface to ensure that the wafer surface is cleaned and dried.

Benefits of technology

It achieves full-coverage cleaning and drying of the wafer surface, improves the wafer post-processing effect, avoids secondary contamination at contact points, simplifies the gas supply system, and enhances safety.

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Abstract

The application relates to the technical field of chemical mechanical polishing post-processing, and discloses a wafer post-processing system and method. The system comprises a cleaning tank used for containing cleaning liquid for cleaning wafers; and a wafer lifting device used for lifting a wafer immersed in the cleaning liquid from the cleaning liquid. The wafer lifting device comprises a first moving mechanism used for lifting a lower side position of the wafer in the cleaning liquid; and a second moving mechanism used for, when the wafer is lifted to a preset position by the first moving mechanism, continuously lifting an upper side position of the wafer above the liquid surface of the cleaning liquid until the wafer is separated from the cleaning liquid.
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Description

Technical Field

[0001] This invention relates to the field of chemical mechanical polishing post-processing technology, and more particularly to a wafer post-processing system and method. Background Technology

[0002] Chemical mechanical planarization (CMP) is an ultra-precision surface processing technique used in integrated circuit (IC) manufacturing to achieve global planarization. With the development of IC manufacturing technology, the control of wafer surface defects has become increasingly stringent. During wafer manufacturing, contaminants such as particles or organic matter can adsorb onto the wafer surface, generating numerous defects that require post-processing to remove.

[0003] Especially in chemical mechanical polishing (CMP), the extensive use of chemical reagents and abrasives can contaminate the wafer surface. Therefore, post-processing is necessary after polishing to remove these contaminants. Post-processing typically consists of cleaning and drying to provide a smooth and clean wafer surface. The purpose of post-polishing cleaning is to remove particles and various chemicals from the wafer surface, while avoiding corrosion and damage to the surface and internal structures during the cleaning process. Common wet cleaning methods involve cleaning the wafer in a solution environment, such as soaking in cleaning agents, mechanical scrubbing, and wet chemical cleaning. After cleaning, the wafer surface needs to be dried to remove any residual liquid.

[0004] In the post-processing of wafers, fixtures are generally used to hold and fix the wafer in place. However, defects may occur at the contact points between the wafer and the fixture due to the inability to clean or dry them, which ultimately affects the overall processing effect of the wafer. Summary of the Invention

[0005] This invention provides a wafer post-processing system and method, which aims to at least solve one of the technical problems existing in the prior art.

[0006] A first aspect of the present invention provides a wafer post-processing system, comprising:

[0007] A cleaning tank is used to hold cleaning fluid for cleaning wafers;

[0008] A wafer lifting device is used to lift wafers immersed in a cleaning solution from the cleaning solution.

[0009] The wafer ramping device includes:

[0010] The first moving mechanism is used to lift the wafer from its lower position in the cleaning solution;

[0011] The second moving mechanism is used to continue lifting the wafer from its cleaned and dried upper position above the cleaning fluid surface until the wafer is removed from the cleaning fluid when the first moving mechanism lifts the wafer to a preset position.

[0012] In one embodiment, the wafer post-processing system further includes a controller connected to the wafer lifting device;

[0013] After the second moving mechanism is fixed to the wafer, the controller controls the first moving mechanism to release the wafer.

[0014] In one embodiment, the first moving mechanism is provided with an in-situ detection module for detecting whether the wafer is in place.

[0015] In one embodiment, the first moving mechanism includes a recess for receiving the underside of the wafer and a first drive member connected to the recess.

[0016] In one embodiment, the second moving mechanism is provided with a clamping detection module for detecting whether the wafer is clamped.

[0017] In one embodiment, the second moving mechanism includes a first clamping member, a second clamping member, and a second driving member. The second driving member is connected to the first clamping member and the second clamping member respectively to synchronously drive the first clamping member and the second clamping member to move towards or away from each other. The first clamping member and the second clamping member are arranged opposite to each other for clamping the wafer.

[0018] In one embodiment, the wafer post-processing system further includes:

[0019] A gas jetting device is used to spray drying gas onto the wafer surface during the process of lifting the wafer from the cleaning solution to dry the wafer.

[0020] In one embodiment, the gas injection device includes:

[0021] The first spraying mechanism is used to spray drying gas onto the first surface of the wafer;

[0022] The second spraying mechanism is used to spray drying gas onto the second surface of the wafer;

[0023] The first surface and the second surface are two opposite surfaces of the wafer.

[0024] In one embodiment, both the first injection mechanism and the second injection mechanism include a gas injection assembly, a rotary drive module, and a control module connected in sequence.

[0025] The control module controls the rotation of the gas injection assembly via the rotary drive module to align the injected dry gas with the surface of the cleaning fluid.

[0026] A second aspect of the present invention provides a wafer post-processing method, comprising:

[0027] Elevate the wafer immersed in the cleaning solution from the cleaning solution;

[0028] The wafer is lifted from its lower position in the cleaning solution using a first moving mechanism;

[0029] When the first moving mechanism lifts the wafer to a preset position, the second moving mechanism fixes the wafer in the cleaned and dried upper position above the cleaning fluid surface and continues to lift it until the wafer is removed from the cleaning fluid.

[0030] The wafer post-processing system and method described in this application have the following advantages: they can ensure that the entire surface of the wafer is cleaned and dried, thereby improving the wafer post-processing effect. Attached Figure Description

[0031] The advantages of the present invention will become clearer and easier to understand through the detailed description taken in conjunction with the following accompanying drawings, but these drawings are merely illustrative and do not limit the scope of protection of the present invention, wherein:

[0032] Figure 1 This is a front view of a wafer post-processing system provided in an embodiment of the present invention;

[0033] Figure 2 This is a right view of a wafer post-processing system provided in an embodiment of the present invention;

[0034] Figure 3a A schematic diagram of a first moving mechanism provided in an embodiment of the present invention;

[0035] Figure 3b A schematic diagram of a first moving mechanism provided for another embodiment of the present invention;

[0036] Figure 4 A right view of a wafer post-processing system provided in another embodiment of the present invention;

[0037] Figure 5 This is a schematic diagram illustrating the principle of wafer post-processing provided in another embodiment of the present invention;

[0038] Figure 6 This is a schematic diagram of the structure of a wafer post-processing system provided in another embodiment of the present invention;

[0039] Figure 7 This is a schematic diagram of the structure of a gas injection device provided in an embodiment of the present invention;

[0040] Figure 8a and 8b This is a schematic diagram of the spray mechanism provided in an embodiment of the present invention;

[0041] Figure 9a and9b This is a schematic diagram of the spraying mechanism provided in another embodiment of the present invention;

[0042] Explanation of reference numerals in the attached figures:

[0043] w, wafer;

[0044] 10. Wafer lifting device; 11. First moving mechanism; 111. Groove; 112. First connector; 113. First slider; 114. First guide rail; 115. First servo cylinder; 12. Second moving mechanism; 121. First clamping member; 122. Second clamping member; 123. Second driving member; 124. Vertical moving mechanism; 125. Horizontal moving mechanism;

[0045] 20. Gas injection device; 21. First injection mechanism; 22. Second injection mechanism; 23. Gas injection assembly; 231. Spray bar; 232. Air jet orifice; 233. Slender slit; 24. Rotary drive module; 25. Control module;

[0046] 30. Cleaning tank. Detailed Implementation

[0047] The technical solutions of the present invention will be described in detail below with reference to specific embodiments and accompanying drawings. The embodiments described herein are specific implementations of the present invention, used to illustrate the concept of the present invention; these descriptions are explanatory and exemplary, and should not be construed as limiting the implementation methods or the scope of protection of the present invention. In addition to the embodiments described herein, those skilled in the art can employ other obvious technical solutions based on the content disclosed in the claims and specification of this application. These technical solutions include those that make any obvious substitutions and modifications to the embodiments described herein. It should be understood that, unless specifically stated otherwise, for ease of understanding, the following description of specific embodiments of the present invention is based on the premise that the relevant equipment, devices, components, etc., are in their original static state and are not given external control signals or driving forces.

[0048] like Figure 1 and Figure 2 As shown, an embodiment of the present invention provides a wafer post-processing system, comprising:

[0049] Cleaning tank 30 is used to hold cleaning solution for cleaning wafer w;

[0050] Wafer lifting device 10 is used to lift a wafer w immersed in cleaning solution from cleaning solution;

[0051] The wafer ramping device 10 includes:

[0052] The first moving mechanism 11 is used to lift the wafer w from its lower position in the cleaning solution.

[0053] The second moving mechanism 12 is used to continue to lift the upper side of the wafer w, which is located above the surface of the cleaning liquid and has been cleaned and dried, until the wafer w is removed from the cleaning liquid when the first moving mechanism 11 lifts the wafer w to a preset position.

[0054] In this embodiment, after the second moving mechanism 12 is fixed to the wafer w, the first moving mechanism 11 releases the wafer w.

[0055] The surface of the second moving mechanism 12 is kept clean and dry, and the position where the second moving mechanism 12 contacts the wafer w is also the position that has been cleaned and dried, thus avoiding secondary contamination at the contact position and solving the problem that the contact area between the fixture and the wafer cannot be completely cleaned and dried.

[0056] The surfaces of the first moving mechanism 11 and the second moving mechanism 12 that are in contact with the wafer are both provided with a hydrophobic coating.

[0057] The fixing part of the first moving mechanism 11 for fixing the wafer w is placed in the cleaning tank 30 and located below the wafer w. After the wafer w is completely immersed in the cleaning solution and cleaning is completed, the first moving mechanism 11, placed in the cleaning tank 30, moves upward from below the wafer w to fix the lower position of the wafer w and lift the wafer w from below. This lower position is located in the cleaning solution, such as... Figure 1 As shown, in one possible implementation, the lower position of the upper end of the first moving mechanism 11 that contacts the wafer is located below the center of the wafer, and the vertical distance from the center of the wafer is greater than one-third of the wafer radius.

[0058] The first moving mechanism 11 moves the wafer w upwards. When the first moving mechanism 11 lifts the wafer w to a preset position, it stops moving. At this time, part of the wafer w is exposed above the cleaning fluid surface. The second moving mechanism 12 moves downwards from above the wafer w to fix the wafer w at its upper position above the cleaning fluid surface. After the second moving mechanism 12 stabilizes and fixes the wafer w, it continues to move the wafer w upwards to further lift it until the wafer w is removed from the cleaning fluid. Figure 1 As shown, in one possible implementation, the preset position is the position where the center of the wafer is detached from the cleaning liquid surface. This preset position is higher than the lower position of the wafer w fixed by the first moving mechanism 11 and lower than the upper position of the wafer w fixed by the second moving mechanism 12. Specifically, the first moving mechanism 11 lifts the wafer to the preset position such that the distance between the wafer apex and the liquid surface is 1.2 to 1.5 times the wafer radius. The upper position where the second moving mechanism 12 contacts the wafer can be the endpoint of the wafer's horizontal diameter or an edge point slightly below that endpoint, for example, 10 mm below.

[0059] In this embodiment of the invention, two moving mechanisms are used to lift the wafer w respectively. The first moving mechanism 11 contacts the wafer w below the surface of the cleaning solution and lifts the wafer w. After the wafer w is exposed above the liquid surface, the second moving mechanism 12 fixes the position of the wafer w that has been cleaned and dried and continues to lift the wafer w until the wafer w is completely removed from the liquid surface. There are no parts that cannot be cleaned or dried in the whole process, which can ensure that the entire surface of the wafer w is cleaned and dried, thus improving the post-processing effect of the wafer w.

[0060] In one embodiment of the present invention, the wafer post-processing system further includes a controller connected to the wafer lifting device 10, the controller controlling the first moving mechanism 11 and the second moving mechanism 12 to perform the above-described actions. After the second moving mechanism 12 is fixed to the wafer w, the controller controls the first moving mechanism 11 to release the wafer w.

[0061] like Figure 1 and Figure 2 As shown, the first moving mechanism 11 includes a groove 111 for receiving the lower side of the wafer w and a first driving member connected to the groove 111. The first driving member is used to drive the groove 111 to move up and down. When the wafer w is placed in the cleaning solution, the first moving mechanism 11 moves to place the lower side of the wafer w in the groove 111.

[0062] In one embodiment, the first moving mechanism 11 is provided with an in-situ detection module for detecting whether the wafer w is in place.

[0063] The in-situ detection module can be a pressure sensor. The pressure sensor is located on the surface of the groove 111 that contacts the wafer w. When the groove 111 supports the wafer w, the pressure sensor detects the pressure change and thus determines that the wafer w is in place.

[0064] like Figure 3a As shown, in one possible implementation, the groove 111 is provided with a perforated hole 116 that penetrates the upper surface and the bottom surface, in order to prevent impurities from being deposited on the surface of the groove 111 that contacts the wafer w.

[0065] like Figure 3b As shown, as another possible implementation, the first moving mechanism 11 includes a first support member 117 and a second support member 118, which can be two pillars used to support the lower part of the wafer.

[0066] like Figure 1As shown, the second moving mechanism 12 includes a first clamping member 121, a second clamping member 122, and a second driving member 123. The second driving member 123 is connected to the first clamping member 121 and the second clamping member 122 to synchronously drive the first clamping member 121 and the second clamping member 122 to move towards or away from each other. The first clamping member 121 and the second clamping member 122 are arranged opposite to each other to clamp the wafer w. Optionally, the second driving member 123 can be implemented by a motor or a cylinder.

[0067] Understandably, when the second driving member 123 synchronously drives the first clamping member 121 and the second clamping member 122 to move towards each other, the first clamping member 121 and the second clamping member 122 approach each other, and the bottom of the first clamping member 121 and the bottom of the second clamping member 122 can clamp the wafer w. When the second driving member 123 synchronously drives the first clamping member 121 and the second clamping member 122 to move away from each other, the first clamping member 121 and the second clamping member 122 move away from each other, and the bottom of the first clamping member 121 and the bottom of the second clamping member 122 can release the wafer w.

[0068] In one embodiment, the second moving mechanism 12 is provided with a clamping detection module for detecting whether the wafer w is clamped.

[0069] The clamping detection module may include a first sensor mounted on the second drive member 123. The first sensor is used to detect the first clamping position where the first clamping member 121 and the second clamping member 122 clamp the wafer w. The first sensor determines whether the first clamping member 121 and the second clamping member 122 are clamping the wafer w by detecting the movement distance of the second drive member 123, or by detecting the distance between the two parts of the second drive member 123 connected to the first clamping member 121 and the second clamping member 122, respectively. Alternatively, the first sensor may also determine whether the wafer w is clamped by detecting the load on the second drive member 123.

[0070] The first sensor can accurately determine whether the second moving mechanism 12 has clamped or released the wafer w, thereby confirming whether the next operation can proceed.

[0071] like Figure 4As shown, in one embodiment, the first driving component of the first moving mechanism 11 includes a first connecting member 112, a first slider 113, a first guide rail 114, and a first servo cylinder 115. One end of the first connecting member 112 is connected to the groove 111, and the other end is connected to the first slider 113. The first slider 113 is movably disposed on the first guide rail 114, which extends vertically to allow the first slider 113 to move up and down. The first servo cylinder 115 is used to control the direction and distance of movement of the first slider 113 on the first guide rail 114. The working principle of the first moving mechanism 11 is as follows: the first servo cylinder 115 controls the first slider 113 to move on the first guide rail 114 so that the first slider 113 drives the groove 111 to move up and down via the first connecting member 112.

[0072] like Figure 4 As shown, in one embodiment, the second drive member 123 of the second moving mechanism 12 is connected to the vertical moving mechanism 124 and the horizontal moving mechanism 125, so that the first moving mechanism 11 can move freely in both the vertical and horizontal directions. The implementation principles of the vertical moving mechanism 124 and the horizontal moving mechanism 125 are similar to those of the first drive member, and will not be described again here.

[0073] like Figure 5 As shown, in one embodiment of the present invention, the wafer post-processing system further includes a gas injection device 20, used to inject drying gas onto the surface of the wafer w during the process of lifting the wafer w from the cleaning solution, so as to dry the wafer w.

[0074] In one embodiment, the gas injection device 20 can rotate about a rotation axis so that the injected gas follows the movement of the meniscus. The rotation angle of the gas ejection position of the gas injection device 20 about the rotation axis is between 10° and 50° with respect to the horizontal plane.

[0075] Furthermore, the gas injection device 20 injects dry gas at a first temperature onto the surface of the wafer w, so that the deposits on the surface of the wafer w are peeled off from the surface of the wafer w in a direction opposite to the lifting direction.

[0076] The gas injected by the gas injection device 20 can be nitrogen, and the temperature of the gas, i.e., the first temperature, is higher than the temperature of the cleaning liquid but lower than 60°C.

[0077] like Figure 5As shown, the principle of wafer post-processing using the gas jet device 20 is as follows: while the wafer w is pulled out of the cleaning solution at a constant speed V, hot dry gas is sprayed into the meniscus region of the cleaning solution adhering to the surface of the wafer w, causing the liquid temperature in this region to rise and forming a temperature gradient. The temperature gradient induces a surface tension gradient, causing the cleaning solution to flow downward along the meniscus. The strong interfacial flow generated by the Marangoni effect can not only peel off the liquid adsorbed on the surface of the wafer w as the wafer w is pulled out, but also wash away the contaminants adhering to the surface of the wafer w, thereby simultaneously achieving the cleaning and drying of the wafer w.

[0078] exist Figure 5 In the process, due to the wetting effect of the liquid, the liquid rises along the surface of the wafer w. Under the action of the surface tension of the liquid, the contact liquid surface at the three-phase interface of gas (drying gas), liquid (cleaning fluid) and solid (wafer) presents a concave meniscus-shaped curved liquid surface, i.e., the meniscus.

[0079] The temperature of nitrogen gas is higher than that of the cleaning fluid, which causes a change in the temperature distribution in the meniscus region. Since the surface tension of the interface depends on the temperature distribution, Marangoni convection occurs. That is, when hot drying gas is sprayed at the interface between the liquid and the solid in this embodiment, the cleaning fluid carries the deposits on the wafer surface downwards based on the thermal Marangoni effect, thereby achieving the cleaning and drying of wafer w, reducing liquid residue and improving the wafer drying effect.

[0080] Nitrogen gas is kept at a temperature below 60°C to avoid drying defects caused by excessive liquid evaporation due to overheating of the wafer.

[0081] This embodiment uses environmentally friendly nitrogen gas instead of flammable, explosive, and toxic organic vapors for Marangoni drying, eliminating the need for safety protection devices, simplifying the gas supply system, and improving the safety of the wafer post-processing system. Furthermore, the wafer post-processing system based on the Marangoni effect of this invention exhibits significant drying effects on substrates with low thermal conductivity, such as sapphire and gallium nitride substrates.

[0082] Combination Figures 1 to 5 The working process of the wafer post-processing system provided by the present invention includes:

[0083] In the first step, the first moving mechanism 11 moves the wafer w upward (i.e., moves it out of the cleaning liquid). When the wafer w begins to emerge from the surface of the cleaning liquid, the gas injection device 20 begins to inject hot dry gas into the curved liquid surface area of ​​the cleaning liquid adhering to the surface of the wafer w to dry the part of the wafer that is exposed from the liquid surface.

[0084] In the second step, when the first moving mechanism 11 lifts the wafer w to a preset position, for example, after more than half of the wafer w is exposed above the liquid surface, the first moving mechanism 11 stops moving. At this time, the second moving mechanism 12 fixes the upper position of the wafer that has been dried and then continues to lift the wafer w until the wafer is completely removed from the cleaning liquid, thereby achieving overall cleaning and drying of the surface of the wafer w.

[0085] like Figure 6 As shown, the gas injection device 20 includes:

[0086] The first spraying mechanism 21 is used to spray drying gas onto the first surface of the wafer.

[0087] The second spraying mechanism 22 is used to spray dry gas onto the second surface of the wafer.

[0088] The first surface and the second surface are two opposite surfaces of the wafer w.

[0089] The first jetting mechanism 21 and the second jetting mechanism 22 are located on opposite sides of the wafer.

[0090] In this embodiment, the first spraying mechanism 21 and the second spraying mechanism 22 operate simultaneously to spray a drying gas at a first temperature onto the meniscus region of the cleaning fluid adhering to the two opposing surfaces of the wafer w during the lifting process from the cleaning fluid. This causes the adhering substances on the two surfaces of the wafer w to peel off from the wafer w surface in a direction opposite to the lifting direction. This embodiment achieves simultaneous drying of the two opposing surfaces of the wafer w during the lifting process through the first spraying mechanism 21 and the second spraying mechanism 22.

[0091] like Figure 7 As shown, taking one side of wafer w as an example, the first jetting mechanism 21 and the second jetting mechanism 22 both include a gas jetting assembly 23, a rotation drive module 24 and a control module 25 connected in sequence.

[0092] The control module 25 controls the gas injection assembly 23 to rotate via the rotation drive module 24 so that the dry gas it injects is aimed at the curved liquid surface area.

[0093] As one possible implementation, the control module 25 controls the gas injection assembly 23 to rotate at a preset angular velocity so that the dry gas injected by the gas injection assembly 23 is aligned with the curved liquid surface area.

[0094] As another possible implementation, the control module 25 is also connected to the wafer lifting device 10 via a controller. The control module 25 obtains the lifting speed of the wafer lifting device 10 by the controller and calculates the rotational angular velocity of the corresponding gas injection component 23 so that the gas injection component 23 cooperates with the wafer lifting device 10 to rotate the injection angle of the dry gas accordingly as the wafer rises.

[0095] The rotation drive module 24 can drive the gas injection assembly 23 to rotate so that the angle of the gas injected by the gas injection assembly 23 changes simultaneously with the change of the solid-liquid interface generated by the wafer w pulling.

[0096] In one embodiment, the rotary drive module 24 includes a rotary motor and a motor driver. The rotary motor is fixedly connected to the gas injection assembly 23 to drive the gas injection assembly 23 to rotate. The motor driver is connected to the rotary motor and the control module 25 respectively. The control module 25 drives the operation of the rotary motor through the motor driver.

[0097] like Figure 7 As shown, the spraying mechanism sprays drying gas over a range larger than the diameter of the wafer, so that the drying gas can be sprayed to the clamping position between the second moving mechanism 12 and the wafer, thereby avoiding secondary contamination at the clamping position.

[0098] In one embodiment of the present invention, the wafer post-processing system further includes a gas supply source for providing dry gas at the first temperature, the gas supply source being connected to the gas injection device 20 via a pipeline.

[0099] In one embodiment, the pipeline is equipped with a control valve for controlling the on / off state of the pipeline and a flow meter for controlling the flow rate of the drying gas.

[0100] like Figure 8a The diagram shows a schematic of a gas injection assembly 23 according to an embodiment of the present invention. The gas injection assembly 23 includes a hollow spray bar 231. The spray bar 231 is connected to a gas supply source providing drying gas via a pipeline. The drying gas flows into the hollow portion of the spray bar 231 through the air inlet. Multiple air jet holes 232, communicating with the hollow portion, are spaced apart on the spray bar 231. The drying gas is ejected outward through the air jet holes 232. When multiple air jet holes 232 simultaneously inject drying gas at the first temperature, an air curtain is formed, which is used to spray the meniscus region to dry the wafer w.

[0101] Specifically, the diameter of the spray bar 231 is 12 mm, the vertical distance from the bottom of the spray bar 231 to the liquid surface is 5 to 15 mm, and the horizontal distance from the nearest end of the spray bar 231 to the wafer is 5 to 10 mm. The angle between the jet nozzle 232 and the horizontal plane ranges from 10° to 50°. The gas flow rate introduced into the spray bar 231 is 15 to 50 L / min.

[0102] like Figure 8b As shown, Figure 8a A partial structural diagram of a spray bar 231 with multiple air jet holes 232. Figure 8a The local structure E in the image is magnified as follows: Figure 8b As shown, a plurality of air jet holes 232 are horizontally spaced on the spray bar 231. The air jet holes 232 can be circular holes with a diameter d1 of 0.1 to 0.5 mm, preferably 0.1 mm. The distance between two adjacent air jet holes 232 is 2 to 5 mm, preferably 3 mm.

[0103] like Figure 9a The diagram shows a gas injection assembly 23 according to another embodiment of the present invention. The gas injection assembly 23 includes a hollow spray bar 231. The spray bar 231 is connected to a gas supply source providing drying gas via a pipeline. The drying gas flows into the hollow portion of the spray bar 231 through the air inlet. A narrow slit 233 communicating with the hollow portion is provided on the spray bar 231, through which the drying gas is ejected outwards. When the drying gas at the first temperature is ejected through the narrow slit 233, an air curtain is formed, which is used to spray the meniscus region to dry the wafer w.

[0104] like Figure 9b As shown, Figure 9a A partial structural diagram of the spray bar 231 with a narrow slit 233. Figure 9a The local structure I in the image is magnified as follows: Figure 9b As shown, the elongated slit 233 extends horizontally, its length matching the diameter of the wafer w, and its width d2 can be 0.1 to 0.5 mm, preferably 0.1 mm.

[0105] In one embodiment, the length of the spray bar 231 is greater than the diameter of the wafer.

[0106] In one embodiment, the controller is used to control the wafer lifting device 10, the gas injection device 20, and the gas supply source to operate synchronously.

[0107] This invention also discloses a wafer post-processing method, which includes the following steps:

[0108] Step S1: Lift the wafer immersed in the cleaning solution from the cleaning solution;

[0109] Step S2: The wafer is lifted by fixing its lower position in the cleaning solution using the first moving mechanism;

[0110] Step S3: When the first moving mechanism lifts the wafer to a preset position, the second moving mechanism is used to fix the wafer at the upper position above the surface of the cleaning fluid and continue to lift it until the wafer is removed from the cleaning fluid.

[0111] In one embodiment, after the second moving mechanism is fixed to the wafer, the first moving mechanism releases the wafer.

[0112] The accompanying drawings in this specification are schematic diagrams used to illustrate the concept of the invention and to schematically show the shapes of the various parts and their interrelationships. It should be understood that, in order to clearly show the structure of the various components of the embodiments of the invention, the drawings are not drawn to the same scale, and the same reference numerals are used to indicate the same parts in the drawings.

[0113] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0114] Although embodiments of the invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A wafer post-processing system, comprising: A cleaning tank is used to hold cleaning fluid for cleaning wafers; A wafer lifting device is used to lift a wafer immersed in the cleaning solution from the cleaning solution, the wafer lifting device comprising: A first moving mechanism is used to fix the wafer in the lower position in the cleaning solution for lifting. The first moving mechanism includes a groove for accommodating the lower side of the wafer and a first driving member connected to the groove. The groove is provided with a hollow hole that penetrates its upper surface and bottom surface to avoid the deposition of impurities on the surface of the groove that contacts the wafer. A second moving mechanism is used to fix the upper, already cleaned and dried side of the wafer above the surface of the cleaning fluid when the first moving mechanism lifts the wafer to a preset position, and continue lifting until the wafer is removed from the cleaning fluid. The second moving mechanism includes a second driving member, which is connected to a vertical moving mechanism and a horizontal moving mechanism that enable the second moving mechanism to move vertically and horizontally. The vertical moving mechanism and the horizontal moving mechanism are disposed on one side of the wafer opposite to the first driving member. A controller, connected to the wafer lifting device, controls the first moving mechanism to fix the lower position of the wafer and lift the wafer from below, and controls the first moving mechanism to stop moving when the wafer moves to the preset position, and controls the second moving mechanism to fix the upper position of the wafer from above and continue lifting the wafer until the wafer is removed from the cleaning fluid; and A gas injection device is used to inject drying gas onto the surface of the wafer during the process of lifting the wafer from the cleaning solution to dry the wafer. The gas injection device includes: a first injection mechanism for injecting the drying gas onto a first surface of the wafer; and a second injection mechanism for injecting the drying gas onto a second surface of the wafer. The first surface and the second surface are two opposite surfaces of the wafer. Both the first injection mechanism and the second injection mechanism include a gas injection assembly, a rotation drive module, and a control module connected in sequence. The control module obtains the lifting speed of the wafer lifting device through a controller and calculates the corresponding rotational angular velocity of the gas injection assembly so that the gas injection assembly cooperates with the wafer lifting device, and the injection angle of the drying gas rotates accordingly as the wafer rises.

2. The wafer post-processing system as described in claim 1, characterized in that, The controller is also configured to control the first moving mechanism to release the wafer after the second moving mechanism has been fixed to the wafer.

3. The wafer post-processing system as described in claim 1, characterized in that, The first moving mechanism is equipped with an in-situ detection module for detecting whether the wafer is in place.

4. The wafer post-processing system as described in claim 1, characterized in that, The second moving mechanism is equipped with a clamping detection module for detecting whether the wafer is clamped.

5. The wafer post-processing system as described in claim 1, characterized in that, The second moving mechanism includes a first clamping member and a second clamping member. The second driving member is connected to the first clamping member and the second clamping member respectively to synchronously drive the first clamping member and the second clamping member to move towards or away from each other. The first clamping member and the second clamping member are arranged opposite to each other to clamp the wafer.

6. The wafer post-processing system as described in claim 1, characterized in that, Both the first injection mechanism and the second injection mechanism include a gas injection assembly, a rotary drive module, and a control module connected in sequence; The control module controls the rotation of the gas injection assembly via the rotation drive module to align the injected dry gas with the surface of the cleaning fluid.

7. A wafer post-processing method, performed using a wafer post-processing apparatus according to any one of claims 1-6, the method comprising: The wafer immersed in the cleaning solution is lifted from the cleaning solution; The wafer is lifted by fixing it in the lower position in the cleaning solution using the first moving mechanism; When the first moving mechanism lifts the wafer to a preset position, the second moving mechanism fixes the upper, already cleaned and dried position of the wafer above the surface of the cleaning liquid and continues to lift it until the wafer is removed from the cleaning liquid.