Gallium nitride HEMT tube integrated circuit, flyback circuit, bridgeless PFC circuit and laser radar

Abstract

The present invention relates to a gallium nitride HEMT tube integrated circuit, a flyback circuit, a bridgeless PFC circuit and a laser radar. The gallium nitride HEMT tube integrated circuit comprises: a first gallium nitride HEMT tube encapsulated in a tube shell, a reverse freewheeling unit and a discharge unit; the input end of the reverse freewheeling unit is connected to the source of the first gallium nitride HEMT tube, and the output end is connected to the drain of the first gallium nitride HEMT tube, which is used to form a reverse freewheeling loop with the first gallium nitride HEMT tube; the input end of the discharge unit is connected to the drain of the first gallium nitride HEMT tube, and the output end is used for grounding, which is used to discharge current for the first gallium nitride HEMT tube. By configuring a reverse freewheeling unit for the first gallium nitride HEMT tube of the main core, the gallium nitride HEMT tube integrated circuit has good reverse freewheeling capability, and configuring the discharge unit to discharge the current of the first gallium nitride HEMT to improve the avalanche tolerance, thereby improving the tolerance range of the first gallium nitride HEMT tube of the main core, and being able to replace MOSFET in more scenarios to obtain better performance than MOSFET.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a gallium nitride HEMT tube integrated circuit, a flyback circuit, a bridgeless PFC circuit and a laser radar. Background Art

[0002] With the technological iteration of scientific and technological products, whether it is consumer electronics, communication hardware, electric vehicles or household appliances, how to improve power conversion efficiency, increase power density, extend battery life and speed up switching speed are all issues that must be considered. Based on the improvement of these issues, the electronics industry will become more and more dependent on a new type of power semiconductor - gallium nitride (GaN) HEMT (High Electron Mobility Transistor).

[0003] Compared with MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), GaN HEMT can switch faster. However, compared with MOSFET, GaN HEMT has poor reverse freewheeling capability and poor avalanche performance, and cannot completely replace MOSFET in some application scenarios. Summary of the invention

[0004] Based on this, it is necessary to provide a gallium nitride HEMT tube integrated circuit, a flyback circuit, a bridgeless PFC circuit and a radar to address the above problems.

[0005] A gallium nitride HEMT integrated circuit comprises: a first gallium nitride HEMT tube packaged in a tube shell, a reverse freewheeling unit and a discharge unit;

[0006] The input end of the reverse freewheeling unit is connected to the source of the first gallium nitride HEMT tube, and the output end is connected to the drain of the first gallium nitride HEMT tube, so as to form a reverse freewheeling loop with the first gallium nitride HEMT tube;

[0007] The input end of the discharge unit is connected to the drain of the first gallium nitride HEMT tube, and the output end is grounded, so as to discharge the current for the first gallium nitride HEMT tube.

[0008] In one embodiment, the reverse freewheeling unit includes: a second gallium nitride HEMT tube;

[0009] The source of the second gallium nitride HEMT tube is connected to the drain of the first gallium nitride HEMT tube, and the drain is connected to the source of the first gallium nitride HEMT tube;

[0010] The gate and drain of the second gallium nitride HEMT tube are connected.

[0011] In one embodiment, the reverse freewheeling unit further includes: a third gallium nitride HEMT tube and a first resistor;

[0012] A first end of the first resistor is connected to the drain of the first gallium nitride HEMT tube, and a second end of the first resistor is connected to the source of the second gallium nitride HEMT tube;

[0013] The gate of the third gallium nitride HEMT tube is connected to the source of the second gallium nitride HEMT tube, the drain is connected to the source of the first gallium nitride HEMT tube, and the source is connected to the first end of the first resistor.

[0014] In one embodiment, the discharge unit includes: a second resistor, a third resistor and a fourth gallium nitride HEMT tube;

[0015] A first end of the second resistor is connected to the gate of the fourth gallium nitride HEMT tube, and a second end is used for grounding;

[0016] A first end of the third resistor is connected to the drain of the first gallium nitride HEMT tube, and a second end of the third resistor is connected to the gate of the fourth gallium nitride HEMT tube;

[0017] The drain of the fourth gallium nitride HEMT tube is connected to the first end of the third resistor, and the source is grounded.

[0018] In one embodiment, the discharge unit further includes: a fourth resistor and a fifth gallium nitride HEMT tube;

[0019] A first end of the fourth resistor is connected to the source of the fourth gallium nitride HEMT tube, and a second end thereof is grounded;

[0020] The source of the fifth gallium nitride HEMT tube is connected to the second end of the fourth resistor, the drain is connected to the drain of the fourth gallium nitride HEMT tube, and the gate is connected to the first end of the fourth resistor.

[0021] In one embodiment, the first resistor, the second resistor, the third resistor and the fourth resistor are 2DEG resistors.

[0022] A flyback circuit comprises a switch unit, wherein the switch unit comprises a gallium nitride HEMT tube integrated circuit.

[0023] A bridgeless PFC circuit comprises a high-frequency switch unit, wherein the high-frequency switch unit comprises a gallium nitride HEMT tube integrated circuit.

[0024] A laser radar, the laser emission circuit of the laser radar includes a gallium nitride HEMT tube integrated circuit.

[0025] A millimeter wave radar comprises a pulse generator, wherein the pulse generator comprises a gallium nitride HEMT tube integrated circuit.

[0026] The above-mentioned GaN HEMT integrated circuit has good reverse freewheeling capability by configuring a reverse freewheeling unit for the first GaN HEMT tube of the main core, and configuring a discharge unit for the first GaN HEMT discharge current to improve avalanche tolerance, thereby improving the tolerance range of the first GaN HEMT tube of the main core, and can replace MOSFET in more scenarios to obtain better performance than MOSFET. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A schematic diagram of the structure of a gallium nitride HEMT tube integrated circuit in one embodiment;

[0028] Figure 2 A schematic diagram of the circuit structure of a gallium nitride HEMT tube integrated circuit in one embodiment;

[0029] Figure 3 1 is a schematic diagram of a circuit structure of a reverse freewheeling unit in an embodiment;

[0030] Figure 4 FIG. 4 is a schematic diagram of a circuit structure of a discharge unit in an embodiment. DETAILED DESCRIPTION

[0031] In order to facilitate the understanding of the present invention, the present invention will be described more fully below. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used in the specification of the present invention herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention.

[0033] In one embodiment, if Figure 1 As shown, a gallium nitride HEMT integrated circuit is provided, comprising: a first gallium nitride HEMT tube N1 packaged in a tube shell 110, a reverse freewheeling unit 101 and a discharge unit 102;

[0034] The input end of the reverse freewheeling unit 101 is connected to the source of the first gallium nitride HEMT tube N1, and the output end is connected to the drain of the first gallium nitride HEMT tube N1, so as to form a reverse freewheeling loop with the first gallium nitride HEMT tube N1;

[0035] The input end of the discharge unit 102 is connected to the drain of the first gallium nitride HEMT tube N1 , and the output end is grounded, so as to discharge the current of the first gallium nitride HEMT tube N1 .

[0036] Based on the main core first gallium nitride HEMT tube N1, a reverse freewheeling unit 101 is configured for it to improve the reverse freewheeling capability. In addition, a discharge unit 102 is configured

[0037] Compared with MOSFET, GaN HEMT devices can switch faster and reduce the size of capacitors and inductors by increasing the operating frequency without sacrificing power consumption. GaN HEMT devices have very low switching losses, and their ultra-low junction capacitance can ensure smaller dead zone losses, higher working efficiency, no need to configure absorption circuits, saving costs and simplifying circuit design. The size of GaN HEMT devices is nearly two-thirds smaller than that of MOSFET. However, in some application circuits, such as Buck circuits and flyback circuits, the advantages of GaN HEMT devices are required, and at the same time, they also need to have good reverse freewheeling capability and avalanche performance. Direct use of GaN HEMT tubes cannot meet circuit design requirements.

[0038] Based on the main core first gallium nitride HEMT tube N1, a reverse freewheeling unit 101 and a discharge unit 102 are configured for it, and the chip is packaged and used as an integrated circuit, so as to improve the reverse freewheeling capability and avalanche performance of the gallium nitride HEMT device, improve the tolerance range of the gallium nitride HEMT device, and make the gallium nitride HEMT device applicable to more application scenarios. When the first gallium nitride HEMT tube N1 is not turned on and needs to be reversely turned on for freewheeling, the reverse freewheeling unit is used to achieve reverse freewheeling. When the freewheeling continues, the terminal voltage of the drain of the first gallium nitride HEMT tube N1 will continue to increase. If it cannot be discharged, it will cause the first gallium nitride HEMT tube N1 to be broken down. Discharging through the discharge unit can improve the avalanche tolerance of the first gallium nitride HEMT tube.

[0039] In one embodiment, if Figure 2 As shown, the reverse freewheeling unit 101 includes: a second gallium nitride HEMT tube N2;

[0040] The source of the second gallium nitride HEMT tube N2 is connected to the drain of the first gallium nitride HEMT tube N1, and the drain is connected to the source of the first gallium nitride HEMT tube N1;

[0041] The gate and drain of the second gallium nitride HEMT tube N2 are connected.

[0042] When the gate and drain of the second gallium nitride HEMT tube N2 are connected, it has a characteristic equivalent to the forward conduction of a diode, showing a small signal characteristic similar to a small resistor. Since the drain and the gate are connected, Vds>Vgs-Vth must be satisfied, that is, it always works in the saturation region under normal circumstances. If the main core first gallium nitride HEMT tube N1 has reverse freewheeling, the source of the first gallium nitride HEMT tube N1 has output, and the gate voltage of the second gallium nitride HEMT tube N2 increases. When the turn-on voltage of the second gallium nitride HEMT tube N2 is reached, the second gallium nitride HEMT tube N2 is turned on, and a reverse freewheeling loop is formed with the main core first gallium nitride HEMT tube N1. In one embodiment, the freewheeling capability of the integrated circuit can also be adjusted by adjusting the total gate width of the second gallium nitride HEMT tube N2 with freewheeling capability.

[0043] In one embodiment, if Figure 3 As shown, the reverse freewheeling unit 101 further includes: a third gallium nitride HEMT tube N3 and a first resistor R1;

[0044] A first end of the first resistor R1 is connected to the drain of the first gallium nitride HEMT tube N1, and a second end of the first resistor R1 is connected to the source of the second gallium nitride HEMT tube N2;

[0045] The gate of the third gallium nitride HEMT tube N3 is connected to the source of the second gallium nitride HEMT tube N2 , the drain is connected to the source of the first gallium nitride HEMT tube N1 , and the source is connected to the first end of the first resistor R1 .

[0046] The third gallium nitride HEMT tube N3 is connected in parallel with the second gallium nitride HEMT tube N2, and the first resistor R1 is used as the bias resistor of the third gallium nitride HEMT tube N3. When the first gallium nitride HEMT tube N1 of the main core is not turned on and needs to be reversely turned on for freewheeling, when the difference between the source voltage and the drain voltage of the first gallium nitride HEMT tube N1 of the main core is greater than the turn-on voltage Vth(N2) of the second gallium nitride HEMT tube N2, the second gallium nitride HEMT tube N2 is turned on, and current starts to flow through R1 to the drain of the first gallium nitride HEMT tube N1 of the main core. When I R1 When R1>Vth(N3), the third gallium nitride HEMT tube N3 is turned on, and the freewheeling current flows from the source to the drain of the main core first gallium nitride HEMT tube N1, wherein Vth(N3) is the turn-on voltage of the third gallium nitride HEMT tube N3. The third gallium nitride HEMT tube N3 and the second gallium nitride HEMT tube N2 connected in parallel can shunt the freewheeling current, thereby improving the reverse freewheeling capability of the integrated circuit.

[0047] In one embodiment, if Figure 2 As shown, the discharge unit 102 includes: a second resistor R2, a third resistor R3 and a fourth gallium nitride HEMT tube N4;

[0048] A first end of the second resistor R2 is connected to the gate of the fourth gallium nitride HEMT tube N4, and a second end thereof is grounded;

[0049] A first end of the third resistor R3 is connected to the drain of the first gallium nitride HEMT tube N1, and a second end is connected to the gate of the fourth gallium nitride HEMT tube N4;

[0050] The drain of the fourth gallium nitride HEMT tube N4 is connected to the first end of the third resistor R3, and the source is grounded.

[0051] When the main core first gallium nitride HEMT tube N1 is turned off, and the main core first gallium nitride HEMT tube N1 needs to continue to flow from the drain to the source of the first gallium nitride HEMT tube N1, the drain terminal voltage of the main core first gallium nitride HEMT tube N1 will continue to increase until the turn-on voltage Vth(N4) of the fourth gallium nitride HEMT tube N4 is less than (R2 / (R2+R3))*VDrain, where VDrain is the drain terminal voltage of the main core first gallium nitride HEMT tube N1. At this time, the fourth gallium nitride HEMT tube N4 is turned on, and the current flows from the drain of the fourth gallium nitride HEMT tube N4 and flows out through the grounded source to form a flow, forming a discharge loop for the main core first gallium nitride HEMT tube N1, thereby improving the avalanche tolerance of the integrated circuit. In one embodiment, the avalanche tolerance can be adjusted according to the demand by adjusting the total gate width of the fourth gallium nitride HEMT tube N4.

[0052] In one embodiment, if Figure 4 As shown, the discharge unit 102 further includes: a fourth resistor R4 and a fifth gallium nitride HEMT tube N5;

[0053] A first end of the fourth resistor R4 is connected to the source of the fourth gallium nitride HEMT tube N4, and a second end thereof is grounded;

[0054] The source of the fifth gallium nitride HEMT tube N5 is connected to the second end of the fourth resistor R4, the drain is connected to the drain of the fourth gallium nitride HEMT tube N4, and the gate is connected to the first end of the fourth resistor R4.

[0055] When the main core first gallium nitride HEMT tube N1 is turned off, and the main core first gallium nitride HEMT tube N1 needs to continue to freewheel from the drain of the first gallium nitride HEMT tube N1 to the source, the drain terminal voltage of the main core first gallium nitride HEMT tube N1 will continue to increase until the turn-on voltage Vth(N4) of the fourth gallium nitride HEMT tube N4 is less than (R2 / (R2+R3))*VDrain, where VDrain is the drain terminal voltage of the main core first gallium nitride HEMT tube N1. At this time, the fourth gallium nitride HEMT tube N4 is turned on, and current begins to flow through the fourth resistor R4. When I R4*When R4≥Vth(N5), Vth(N5) is the on-voltage of the fifth gallium nitride HEMT tube N5. At this time, the fifth gallium nitride HEMT tube N5 is turned on, and the current flows into the drain of the fifth gallium nitride HEMT tube N5, flows out through the grounded source to form a freewheeling current, and forms a discharge loop for the main core first gallium nitride HEMT tube N1, thereby improving the avalanche tolerance of the integrated circuit. The fifth gallium nitride HEMT tube N5 is connected in parallel with the fourth gallium nitride HEMT tube N4, which can shunt the discharge current and further improve the avalanche tolerance of the integrated circuit.

[0056] In one embodiment, the first resistor R1 , the second resistor R2 , the third resistor R3 , and the fourth resistor R4 are 2DEG resistors.

[0057] In one embodiment, the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 may also be other resistors, as long as they meet the leakage current requirements of each gallium nitride HEMT tube and are not broken down within the working range. Those skilled in the art may select them as needed.

[0058] In one embodiment, a flyback circuit includes a switch unit, and the switch unit includes any one of the gallium nitride HEMT tube integrated circuits in the above embodiments.

[0059] In one embodiment, a bridgeless PFC circuit includes a high-frequency switch unit, and the high-frequency switch unit includes any one of the gallium nitride HEMT tube integrated circuits in the above embodiments.

[0060] In one of the embodiments, a laser radar, the laser emission circuit of the laser radar includes any one of the gallium nitride HEMT tube integrated circuits in the above embodiments.

[0061] In one embodiment, a millimeter wave radar includes a pulse generator, and the pulse generator includes any one of the gallium nitride HEMT tube integrated circuits in the above embodiments.

[0062] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0063] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A gallium nitride HEMT tube integrated circuit, characterized in that: include: The first gallium nitride HEMT tube and the reverse freewheeling unit packaged in the tube shell; The input end of the reverse freewheeling unit is connected to the source of the first gallium nitride HEMT tube, and the output end is connected to the drain of the first gallium nitride HEMT tube, and is used to form a reverse freewheeling loop with the first gallium nitride HEMT tube when the first gallium nitride HEMT tube is not turned on and needs to be reversely turned on for freewheeling; The input end of the discharge unit is connected to the drain of the first gallium nitride HEMT tube, and the output end is grounded, so as to discharge the current for the first gallium nitride HEMT tube; Wherein, the reverse freewheeling unit comprises: a second gallium nitride HEMT tube; The source of the second gallium nitride HEMT tube is connected to the drain of the first gallium nitride HEMT tube, and the drain is connected to the source of the first gallium nitride HEMT tube; The gate and drain of the second gallium nitride HEMT tube are connected; The reverse freewheeling unit further includes: a third gallium nitride HEMT tube and a first resistor; The first end of the first resistor is connected to the drain of the first gallium nitride HEMT tube, and the second end is connected to the source of the second gallium nitride HEMT tube; The gate of the third gallium nitride HEMT tube is connected to the source of the second gallium nitride HEMT tube, the drain is connected to the source of the first gallium nitride HEMT tube, and the source is connected to the first end of the first resistor.

2. The gallium nitride HEMT integrated circuit according to claim 1, characterized in that: The discharge unit includes: a second resistor, a third resistor and a fourth gallium nitride HEMT tube; A first end of the second resistor is connected to the gate of the fourth gallium nitride HEMT tube, and a second end is used for grounding; A first end of the third resistor is connected to the drain of the first gallium nitride HEMT tube, and a second end is connected to the gate of the fourth gallium nitride HEMT tube; The drain of the fourth gallium nitride HEMT tube is connected to the first end of the third resistor, and the source is grounded.

3. The gallium nitride HEMT integrated circuit according to claim 2, characterized in that: The discharge unit further includes: a fourth resistor and a fifth gallium nitride HEMT tube; A first end of the fourth resistor is connected to the source of the fourth gallium nitride HEMT tube, and a second end is used for grounding; The source of the fifth gallium nitride HEMT tube is connected to the second end of the fourth resistor, the drain is connected to the drain of the fourth gallium nitride HEMT tube, and the gate is connected to the first end of the fourth resistor.

4. The gallium nitride HEMT integrated circuit according to claim 3, characterized in that: The first resistor, the second resistor, the third resistor, and the fourth resistor are 2DEG resistors.

5. A flyback circuit, comprising a switch unit, characterized in that: The switch unit comprises the gallium nitride HEMT tube integrated circuit according to any one of claims 1 to 4.

6. A bridgeless PFC circuit, comprising a high-frequency switching unit, characterized in that: The high-frequency switch unit comprises the gallium nitride HEMT tube integrated circuit according to any one of claims 1 to 4.

7. A laser radar, characterized in that: The laser transmitting circuit of the laser radar includes the gallium nitride HEMT tube integrated circuit as described in any one of claims 1 to 4.

8. A millimeter wave radar, comprising a pulse generator, characterized in that: The pulse generator comprises the gallium nitride HEMT tube integrated circuit as claimed in any one of claims 1 to 4.

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