Sensing device and manufacturing method thereof, and robot

Abstract

The present invention relates to the field of sensor technology, and discloses a sensing device, a preparation method thereof, and a robot. The sensing device comprises: a substrate, a sensing layer, and an elastic layer. The sensing layer is arranged on the substrate, and the sensing layer comprises a plurality of sensing element groups, each sensing element group comprises two symmetrically arranged sensing elements; the elastic layer is arranged on the two sensing elements of the sensing element group, so that when the elastic layer is subjected to shear force or pressure from an uneven surface, the parts of the elastic layer corresponding to the two sensing elements undergo different deformations, so that the two sensing elements in the sensing element group undergo different deformations, thereby generating different electrical signals. In the above manner, the present invention can enrich the functions of the sensing device.

Description

Technical Field

[0001] The present invention relates to the field of sensor technology, and in particular to a sensing device and a preparation method thereof, and a robot. Background Art

[0002] Currently, the functions of sensors used to detect pressure are relatively simple and they do not have the function of detecting other forces, such as shear force. Summary of the invention

[0003] In view of this, the main technical problem solved by the present invention is to provide a sensing device and a preparation method thereof, and a robot, which can enrich the functions of the sensing device.

[0004] In order to solve the above technical problems, a technical solution adopted by the present invention is to provide a sensing device. The sensing device includes a substrate, a sensing layer and an elastic layer. The sensing layer is arranged on the substrate, and the sensing layer includes a plurality of sensing element groups, each of which includes two symmetrically arranged sensing elements; the elastic layer is arranged on the two sensing elements of the sensing element group, so that when the elastic layer is subjected to shear force or pressure from an uneven surface, the parts of the elastic layer corresponding to the two sensing elements undergo different deformations, so that the two sensing elements in the sensing element group undergo different deformations, thereby generating different electrical signals.

[0005] In one embodiment of the present invention, the elastic layer includes elastic blocks, and different elastic blocks are respectively provided on two sensing elements of the sensing element group, and the elastic blocks on the two sensing elements of the sensing element group are symmetrically arranged, so that when the elastic blocks on the two sensing elements of the sensing element group are pressed by an uneven surface, the elastic blocks on the two sensing elements of the sensing element group undergo different deformations, so that the two sensing elements of the sensing element group undergo different deformations, thereby generating different electrical signals.

[0006] In one embodiment of the present invention, the elastic layer includes an elastic block, and one elastic block is correspondingly arranged on two sensing elements of a sensing element group, so that when the elastic blocks on the two sensing elements of the sensing element group are subjected to shear force or pressure from an uneven surface, the parts of the elastic blocks on the two sensing elements of the sensing element group corresponding to the two sensing elements undergo different deformations, so that the two sensing elements of the sensing element group undergo different deformations, thereby generating different electrical signals.

[0007] In one embodiment of the present invention, an orthographic projection of a surface of the elastic block facing the sensing element on the substrate covers an orthographic projection of the sensing element on the substrate.

[0008] In one embodiment of the present invention, the sensing element includes one-dimensional material layers and two-dimensional material layers that are alternately stacked.

[0009] In one embodiment of the present invention, the sensing device further comprises a plurality of electrodes and a plurality of electrode leads extending on the substrate, wherein the plurality of electrodes are arranged at the periphery of the sensing layer, one electrode is connected to one electrode lead, and every two electrode leads are respectively connected to one sensing element.

[0010] In one embodiment of the present invention, the sensing device includes a plurality of sensing element groups, which are arranged in sequence along a circumferential direction on a substrate, and two sensing elements in each sensing element group are symmetrically arranged with the corresponding circle center in the circumferential direction as the center.

[0011] In one embodiment of the present invention, the sensing element is arranged to extend in a serpentine shape from a first end to a second end along the surface of the substrate, and the first end and the second end are respectively connected to an electrode lead, wherein the arc width of the end of the sensing element away from the center of the circle is greater than the arc width of the end close to the center of the circle, forming a fan-shaped structure.

[0012] In one embodiment of the present invention, the sensing element covers a portion of the two electrode leads connected thereto, and the portions of the two electrode leads covered by the sensing element form an interdigitated electrode structure.

[0013] In one embodiment of the present invention, the sensing device further comprises a packaging layer, which covers the sensing element and at least a portion of the electrode lead connected to the sensing element close to the sensing element, and the elastic layer is arranged on a side of the packaging layer away from the sensing layer.

[0014] In one embodiment of the present invention, the substrate is a flexible body.

[0015] To solve the above technical problem, another technical solution adopted by the present invention is to provide a robot, which includes the sensing device described in the above embodiment.

[0016] In order to solve the above technical problems, another technical solution adopted by the present invention is to provide a method for preparing a sensing device. The preparation method includes: providing a substrate; forming a sensing layer on the substrate, wherein the sensing layer includes a plurality of sensing element groups, each sensing element group includes two symmetrically arranged sensing elements; forming an elastic layer on the sensing layer, wherein the elastic layer is formed on two sensing elements of the sensing element group, so that when the elastic layer is subjected to shear force or pressure from an uneven surface, the parts of the elastic layer corresponding to the two sensing elements undergo different deformations, so that the two sensing elements in the sensing element group undergo different deformations, thereby generating different electrical signals.

[0017] The beneficial effects of the present invention are as follows: Different from the prior art, the present invention provides a sensing device and a preparation method thereof, and a robot. The sensing device has an elastic layer disposed on two sensing elements of the sensing element group. When subjected to shear force or pressure from an uneven surface, the elastic layer corresponding to the two sensing elements undergoes different deformations, causing the two sensing elements in the sensing element group to undergo different deformations, thereby generating different electrical signals, that is, the sensing device of the present invention can be used to detect shear force and the flatness of the surface of an object. Moreover, pressure can also be detected by the deformation caused by the pressure on the elastic layer and sensing element of the present invention. In other words, the sensing device provided by the present invention not only has the function of detecting pressure, but also has the function of detecting shear force and the flatness of the surface of an object, thereby enriching the function of the sensing device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings herein are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present invention, and together with the specification are used to explain the principles of the present invention. In addition, these drawings and text descriptions are not intended to limit the scope of the present invention in any way, but to illustrate the concept of the present invention for those skilled in the art by reference to specific embodiments.

[0019] Figure 1 It is a structural schematic diagram of an embodiment of a sensing device of the present invention;

[0020] Figure 2 yes Figure 1 A schematic diagram of the structure of the sensing device shown in the top view;

[0021] Figure 3 yes Figure 1 A schematic cross-sectional structure diagram of the sensing device shown;

[0022] Figure 4 yes Figure 1 A schematic cross-sectional structure diagram of the sensing device shown in the pressure detection state;

[0023] Figure 5 yes Figure 1 A schematic cross-sectional structure diagram of the sensing device shown in the state of detecting shear force;

[0024] Figure 6 yes Figure 1 A schematic cross-sectional structure diagram of the sensing device shown in the state of detecting the surface flatness of an object;

[0025] Figure 7 is a schematic structural diagram of another embodiment of the sensing device of the present invention;

[0026] Figure 8 yes Figure 7 A schematic cross-sectional structure diagram of the sensing device shown;

[0027] Fig. 9 yes Figure 7 A schematic cross-sectional structure diagram of the sensing device shown in the pressure detection state;

[0028] Fig.10 yes Figure 7 A schematic cross-sectional structure diagram of the sensing device shown in the state of detecting the surface flatness of an object;

[0029] Fig.11 is a schematic structural diagram of an embodiment of a sensing element of the present invention;

[0030] Fig.12 It is a schematic flow chart of an embodiment of a method for preparing a sensing device of the present invention;

[0031] Fig.13 yes Fig.12 A schematic diagram of the structure of each step in the method for preparing the sensing device shown;

[0032] Fig.14 It is a schematic structural diagram of an embodiment of a robot of the present invention. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in combination with the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0034] In order to solve the technical problem of single sensor function in the prior art, an embodiment of the present invention provides a sensing device. The sensing device includes: a substrate, a sensing layer and an elastic layer. The sensing layer is arranged on the substrate, and the sensing layer includes a plurality of sensing element groups, each sensing element group includes two symmetrically arranged sensing elements; the elastic layer is arranged on the two sensing elements of the sensing element group, so that when the elastic layer is subjected to shear force or pressure from an uneven surface, the parts of the elastic layer corresponding to the two sensing elements undergo different deformations, so that the two sensing elements in the sensing element group undergo different deformations, thereby generating different electrical signals. This is explained in detail below.

[0035] See also Figure 1-2 , Figure 1 is a schematic structural diagram of an embodiment of a sensing device of the present invention, Figure 2 yes Figure 1 The schematic diagram of the top view of the sensing device is shown. Figure 2 The encapsulation layer 5 and the elastic layer 3 are omitted.

[0036] In one embodiment, the sensing device includes a substrate 1, a sensing layer 2 and an elastic layer 3. The sensing layer 2 is disposed on the substrate 1, and includes a plurality of sensing element groups 21, each of which includes two symmetrically disposed sensing elements 211. The elastic layer 3 is disposed on the two sensing elements 211 of the sensing element group 21.

[0037] Optionally, the substrate 1 may be a flexible body, or a thin film made of a flexible material, so that the substrate 1 has good mechanical strength and can be bent. The substrate 1 can match the surface topography of the installation position of the sensing device to be conveniently attached to the installation position of the sensing device, thereby facilitating the installation of the sensing device. Of course, the sensing device is preferably installed on a flat surface to ensure detection accuracy. Preferably, the flexible material used for the substrate 1 may be PI (polyimide) or the like, and its thickness is preferably less than 100 μm.

[0038] The sensing element 211 may be a piezoresistive element, etc. The deformation of the sensing element 211 may cause the resistance value of the sensing element 211 to change. The change in the resistance value of the sensing element 211 is related to the degree of deformation of the sensing element 211, and can reflect the magnitude of the pressure on the sensing element 211.

[0039] The piezoresistive principle of the above-mentioned sensing element 211 can detect different types and forms of forces. Among them, the surfaces of each sensing element 211 are usually designed to be flush with each other, and the entire sensing layer 2 is a force-bearing surface. The details are as follows:

[0040] When the sensing device is used to detect pressure, the elastic layer 3 is subjected to pressure and deforms, so that the two sensing elements 211 of the sensing element group 21 corresponding to the elastic layer 3 are deformed by the same amount, thereby detecting the magnitude of the pressure.

[0041] When the sensing device is used to detect shear force, the elastic layer 3 is subjected to the shear force, and the parts of the elastic layer 3 corresponding to the two sensing elements 211 of the sensing element group 21 undergo different deformations, so that the two sensing elements 211 in the sensing element group 21 undergo different deformations, thereby generating different electrical signals, that is, the two sensing elements 211 of the sensing element group 21 respectively generate different electrical signals, thereby detecting the magnitude of the shear force.

[0042] When the sensing device is used to detect the flatness of the surface of an object, the elastic layer 3 receives pressure from the surface of the object to be detected. When receiving pressure from the uneven surface, the parts of the elastic layer 3 corresponding to the two sensing elements 211 of the sensing element group 21 undergo different deformations, so that the two sensing elements 211 in the sensing element group 21 undergo different deformations, thereby generating different electrical signals, that is, the two sensing elements 211 of the sensing element group 21 respectively generate different electrical signals, thereby detecting the unevenness of the surface of the object to be detected, and at the same time being able to reflect the degree of unevenness of the surface of the object to be detected.

[0043] It can be seen from the above that the sensing device provided by the present invention not only has the function of detecting pressure, but also has the function of detecting shear force and surface flatness of objects, thus enriching the functions of the sensing device. The sensing device provided by the present invention can be applied to the tactile system of a robot to provide force feedback for the robot arm to accurately grasp objects; it can also be attached to the human skin to monitor the joints and muscle activity characteristics of various parts of the human body.

[0044] See also Figure 1 , 3 , Figure 3 yes Figure 1 Schematic diagram of the cross-sectional structure of the sensing device shown.

[0045] In one embodiment, the elastic layer 3 includes an elastic block 31. One elastic block 31 is correspondingly disposed on two sensing elements 211 of a sensing element group 21, so that when the elastic blocks 31 on the two sensing elements 211 of the sensing element group 21 are subjected to shear force or pressure from an uneven surface, portions of the elastic blocks 31 on the two sensing elements 211 of the sensing element group 21 corresponding to the two sensing elements 211 undergo different deformations, so that the two sensing elements 211 of the sensing element group 21 undergo different deformations, thereby generating different electrical signals.

[0046] Figure 1 , 3 The embodiment of the present invention illustrates a situation where one elastic block 31 is correspondingly disposed on two sensing elements 211 of a sensing element group 21, and the elastic blocks 31 corresponding to different sensing element groups 21 are connected at the intersection. It should be noted that the embodiment of the present invention is described by taking the situation where one elastic block 31 is correspondingly disposed on two sensing elements 211 of a sensing element group 21 as an example, which is only for the purpose of discussion and is not intended to be limiting.

[0047] Specifically, when the sensing device is used to detect pressure, the elastic block 31 corresponding to the two sensing elements 211 of the sensing element group 21 receives pressure, and the entire elastic block 31 is pressed down, so that the two sensing elements 211 of the sensing element group 21 corresponding to the elastic block 31 are compressed by the same amount, and then the magnitude of the pressure is detected, such as Figure 4shown.

[0048] When the sensing device is used to detect shear force, the elastic block 31 corresponding to the two sensing elements 211 of the sensing element group 21 receives the shear force, and the parts of the elastic block 31 corresponding to the two sensing elements 211 of the sensing element group 21 undergo different deformations, so that the two sensing elements 211 in the sensing element group 21 undergo different deformations, thereby generating different electrical signals, that is, the two sensing elements 211 of the sensing element group 21 respectively generate different electrical signals, thereby detecting the magnitude of the shear force, such as Figure 5 shown.

[0049] When the sensing device is used to detect the flatness of the surface of an object, the elastic block 31 corresponding to the two sensing elements 211 of the sensing element group 21 receives the pressure from the surface of the object to be detected. When receiving the pressure from the uneven surface, the part of the elastic block 31 corresponding to the two sensing elements 211 of the sensing element group 21 undergoes different deformations, so that the two sensing elements 211 in the sensing element group 21 undergo different deformations, thereby generating different electrical signals, that is, the two sensing elements 211 of the sensing element group 21 respectively generate different electrical signals, thereby detecting the unevenness of the surface of the object to be detected, and at the same time reflecting the degree of unevenness of the surface of the object to be detected, such as Figure 6 shown.

[0050] See also Figure 7-8 , Figure 7 is a schematic structural diagram of another embodiment of the sensing device of the present invention, Figure 8 yes Figure 7 Schematic diagram of the cross-sectional structure of the sensing device shown.

[0051] In an alternative embodiment, the elastic layer 3 includes an elastic block 31. Different elastic blocks 31 are respectively provided on the two sensing elements 211 of the sensing element group 21, and the elastic blocks 31 on the two sensing elements 211 of the sensing element group 21 are symmetrically arranged, so that when the elastic blocks 31 on the two sensing elements 211 of the sensing element group 21 are pressed by an uneven surface, the elastic blocks 31 on the two sensing elements 211 of the sensing element group 21 undergo different deformations, so that the two sensing elements 211 of the sensing element group 21 undergo different deformations, thereby generating different electrical signals.

[0052] Specifically, when the sensing device is used to detect pressure, the elastic blocks 31 corresponding to the two sensing elements 211 of the sensing element group 21 are subjected to pressure, and each elastic block 31 is pressed down, so that the two sensing elements 211 of the sensing element group 21 are compressed by the same amount, and then the magnitude of the pressure is detected, such as Fig. 9 shown.

[0053] When the sensing device is used to detect the surface flatness of an object, the elastic blocks 31 corresponding to the two sensing elements 211 of the sensing element group 21 receive the pressure from the surface of the object to be detected. When receiving the pressure from the uneven surface, the elastic blocks 31 corresponding to the two sensing elements 211 of the sensing element group 21 undergo different deformations, so that the two sensing elements 211 in the sensing element group 21 undergo different deformations, thereby generating different electrical signals, that is, the two sensing elements 211 of the sensing element group 21 generate different electrical signals respectively, thereby detecting the unevenness of the surface of the object to be detected, and at the same time reflecting the degree of unevenness of the surface of the object to be detected, such as Fig.10 shown.

[0054] Furthermore, the orthographic projection of the surface of the elastic block 31 facing the sensing element 211 on the substrate 1 covers the orthographic projection of the sensing element 211 on the substrate 1, such as Figure 3 , 8 As shown, the force received by the elastic block 31 can be better transmitted to the sensing element 211, so that the change in resistance value reflected by the deformation of the sensing element 211 can more accurately describe the force received by the elastic block 31.

[0055] Please continue reading Figure 3 , 8 . In one embodiment, the sensing element 211 includes a one-dimensional material layer 2111 and a two-dimensional material layer 2112 that are alternately stacked. Specifically, the sensing element 211 is formed by alternating one-dimensional material layer 2111 and two-dimensional material layer 2112, and the resistance of the sensing element 211 can be changed when the sensing element 211 is subjected to different forces by using the quantum tunneling effect. In addition, the sensing element 211 of this embodiment has a stable structure, a low elastic modulus, and is conducive to microscopic scale movement and the penetration and escape of ions. In addition, the sensing element 211 of this embodiment is not easy to aggregate into bundles, has a high specific surface area, good adhesion, and a large contact area, so the sensing element 211 of this embodiment has a high detection sensitivity.

[0056] Optionally, the material used in the one-dimensional material layer 2111 may be nano carbon black, single-walled or multi-walled carbon nanotubes, etc., preferably carbon nanotubes. The material used in the two-dimensional material layer 2112 may be metal carbonitrides, graphene, etc., specifically Nb2C, V2C, (Ti 0.5 Nb 0.5 )2C, Ti3C2, Ti3CN, (V 0.5 Cr 0.5 )3C2, Ta4C3, Ti2C, etc., among which Ti3C2 is preferred.

[0057] Please continue reading Figure 2Furthermore, the sensing device includes a plurality of sensing element groups 21. The plurality of sensing element groups 21 are sequentially arranged along a circumferential direction on the substrate 1, and two sensing elements 211 in each sensing element group 21 are centered on the circumferential direction (eg Figure 2 The center of the circle O shown in the figure, the same below) is centrally symmetrically arranged. In this way, when the sensing device is used to detect shear force, the sensing device can detect the direction of the shear force. Specifically, when the sensing device is subjected to shear forces in different directions, there are corresponding sensing element groups 21 corresponding to the shear forces, thereby detecting the magnitude of the shear force, and the direction of the shear force can be determined according to the spacing direction of the two sensing elements 211 of the sensing element group 21 corresponding to the shear force.

[0058] It can be understood that, the greater the number of sensing element groups 21 , the higher the accuracy of determining the direction of the shear force. Figure 2 The figure shows a situation where the number of the sensing element groups 21 is 8 and the 8 sensing element groups 21 form a complete circle.

[0059] Please continue reading Figure 2 . In one embodiment, the sensing device further includes a plurality of electrodes 41 and a plurality of electrode leads 42 extending on the substrate 1. The plurality of electrodes 41 are arranged on the periphery of the sensing layer 2, wherein one electrode 41 is connected to one electrode lead 42, and every two electrode leads 42 are respectively connected to one sensing element 211. The two electrode leads 42 connected to the sensing element 211 are used to connect the sensing element 211 to two electrodes 41, wherein one electrode 41 is used to input an electrical signal to the sensing element 211, and the other electrode 41 is used to lead out the electrical signal to form a current path. Moreover, the change in the resistance of the sensing element 211 will affect the electrical signal led out from the sensing element 211. According to the change in the electrical signal led out from the sensing element 211, the change in the resistance of the sensing element 211 is calculated, and then used to detect the force received by the sensing device, including for detecting pressure, shear force and surface flatness of an object.

[0060] Further, the sensing element 211 is arranged to extend along the surface of the substrate 1 from the first end 2113 to the second end 2114 in a serpentine shape, and the first end 2113 and the second end 2114 are respectively connected to an electrode lead 42. Specifically, the sensing element 211 covers the electrode lead 42 to be connected to the electrode lead 42. The arc width of the end of the sensing element 211 away from the center of the circle is greater than the arc width of the end close to the center of the circle, forming a fan-shaped structure, so that the sensing element groups 21 of each sensing element group 21 form the above-mentioned complete circumference. Of course, in other embodiments of the present invention, the sensing element 211 can also be a rectangular structure, etc., which is not limited here.

[0061] It should be noted that the first end 2113 and the second end 2114 can be sequentially arranged in a direction away from the center of the circle. Specifically, the first end 2113 is closer to the center of the circle than the second end 2114. Figure 2 As shown; or the first end 2113 and the second end 2114 are sequentially arranged along the above circumferential direction, which is not limited here. Among them, the first end 2113 and the second end 2114 are preferably the head and tail ends of the serpentine extension of the sensing element 211, so that the entire sensing element 211 can be subjected to force and used to detect the applied force. In addition, the piezoresistance of the sensing element 211 arranged to be serpentine and extended changes significantly when it is pressed, which is conducive to improving the force sensitivity of the sensing element 211.

[0062] See also Fig.11 . In an alternative embodiment, the sensing element 211 is not arranged to extend in a serpentine shape as in the above-mentioned embodiment, but instead the sensing element 211 is a complete block structure. In order to ensure that the sensing element 211 has sufficient force sensitivity, the sensing element 211 covers a portion of the two electrode leads 42 to which it is connected, and the portions of the two electrode leads 42 covered by the sensing element 211 constitute an interdigitated electrode structure. The electrode leads 42 in the form of interdigitated electrodes enable changes in resistance caused by pressure at any position on the sensing element 211 to be fed back to the two electrode leads 42 connected to the sensing element 211, thereby causing changes in the electrical signal derived from the sensing element 211 to be applied to detect the applied force.

[0063] Please continue reading Figure 1-3 In one embodiment, the sensing device further includes a packaging layer 5, the packaging layer 5 covers the sensing element 211, and the electrode lead 42 connected to the sensing element 211 is at least covered and packaged by the packaging layer 5 at a portion close to the sensing element 211, so as to provide packaging and protection for the sensing element 211 and the electrode lead 42. The elastic layer 3 is disposed on a side of the packaging layer 5 away from the sensing layer 2. Moreover, the packaging layer 5 is also an elastic body, so as to ensure that the force applied to the elastic layer 3 can be transmitted to the sensing element 211.

[0064] Optionally, the elastic layer 3 and the encapsulation layer 5 may be made of materials such as PDMS, silicone rubber, etc., or other materials with the same properties, so that the elastic layer 3 and the encapsulation layer 5 have good elasticity and insulation properties. Of course, the materials of the elastic layer 3 and the encapsulation layer 5 may be the same or different, which is not limited here.

[0065] See also Figure 12-13 , Fig.12 is a schematic flow chart of an embodiment of a method for preparing a sensing device of the present invention, Fig.13 yes Fig.12The schematic diagram of the structure of each step in the method for preparing the sensing device shown in the figure. It should be noted that the method for preparing the sensing device described in this embodiment is based on the sensing device described in the above embodiment. Moreover, the method for preparing the sensing device described in this embodiment is not limited to the following steps.

[0066] S101: coating a first photoresist layer 62 with uniform thickness on a hard base 61;

[0067] In this embodiment, the chemical properties of the hard base 61 are stable, and the surface on which the first photoresist layer 62 is coated is flat and clean, so as to ensure the stability of subsequent processes.

[0068] S102: forming a substrate 1 by attaching the first photoresist layer 62;

[0069] In this embodiment, a thin film for forming the substrate 1, such as the PI film described in the above embodiment, is attached to the first photoresist layer 62 to form the substrate 1. The first photoresist layer 62 can make the substrate 1 fit better with the hard base 61 and keep the surface of the substrate 1 flat.

[0070] S103: coating a second photoresist layer 63 with uniform thickness on the substrate 1 .

[0071] S104: performing patterning on the second photoresist layer 63 and removing the first photoresist layer 62 to separate the substrate 1 and the hard base 61;

[0072] In this embodiment, the second photoresist layer 63 is patterned to form a groove 631, which is then used to form the sensing layer 2. Specifically, a corresponding mask plate can be used in combination, and a part of the second photoresist layer 63 can be removed by a photolithography process and a remover, and a groove 631 is formed at the position where the removed second photoresist layer 63 is located. In addition, in this embodiment, the first photoresist layer 62 can also be removed by a remover, so that the substrate 1 and the hard base 61 are separated. Among them, the remover can be acetone, alcohol, etc., which depends on the specific composition of the first photoresist layer 62 and the second photoresist layer 63.

[0073] S105: forming an electrode 41 and an electrode lead 42 on the substrate 1;

[0074] In this embodiment, a magnetron sputtering process is used with a mask plate having a specific mask pattern to sputter and form the electrode 41 and the electrode lead 42 on the substrate 1. Specifically, the mask plate used in the magnetron sputtering process is hollowed out in the area corresponding to the groove 631 on the second photoresist layer 63 to allow the metal beam to pass through and reach the second photoresist layer 63, while other areas are shielded to block the metal beam, thereby forming the electrode 41 and the electrode lead 42 in the groove 631 on the second photoresist layer 63. Among them, since the thickness of the electrode 41 and the electrode lead 42 is relatively small, usually only a few hundred nanometers, the electrode 41 and the electrode lead 42 are no longer shown in the schematic diagram of the subsequent steps.

[0075] S106: alternately depositing one-dimensional material layers 2111 and two-dimensional material layers 2112 on the substrate 1;

[0076] In this embodiment, one-dimensional material layers 2111 and two-dimensional material layers 2112 are alternately deposited on the substrate 1 by vacuum filtration technology.

[0077] S107: removing the second photoresist layer 63 remaining after the patterning process and the one-dimensional material layer 2111 and the two-dimensional material layer 2112 deposited on the second photoresist layer 63, thereby forming a sensing layer 2;

[0078] In this embodiment, the second photoresist layer 63 remaining after the patterning process is removed, so that the one-dimensional material layer 2111 and the two-dimensional material layer 2112 deposited on the second photoresist layer 63 lack bottom support, resulting in that the one-dimensional material layer 2111 and the two-dimensional material layer 2112 deposited on the second photoresist layer 63 are also easily removed, and then the sensing layer 2 is formed. The second photoresist layer 63 can also be removed by a remover.

[0079] It should be noted that the sensing layer 2 includes a plurality of sensing element groups 21 , and each sensing element group 21 includes two symmetrically arranged sensing elements 211 , which are as described in the above embodiment and will not be described in detail herein.

[0080] S108: forming a packaging layer 5 on the sensing layer 2;

[0081] In this embodiment, the encapsulation layer 5 is formed on the sensing layer 2. Specifically, the sensing layer 2 can be encapsulated using a PDMS solution, which is then cured to form the encapsulation layer 5.

[0082] S109: forming an elastic layer 3 on the encapsulation layer 5;

[0083] In this embodiment, the elastic layer 3 is formed on the packaging layer 5 by mold casting. The elastic layer 3 is formed on the two sensing elements 211 of the sensing element group 21, so that when the elastic layer 3 is subjected to shear force or is pressed by an uneven surface, the parts of the elastic layer 3 corresponding to the two sensing elements 211 undergo different deformations, so that the two sensing elements 211 in the sensing element group 21 undergo different deformations, thereby generating different electrical signals. The specific detection principle has been described in detail in the above embodiment, and will not be repeated here.

[0084] See also Fig.14 , Fig.14 It is a schematic structural diagram of an embodiment of a robot of the present invention.

[0085] In one embodiment, the robot 7 includes a sensing device 71. The robot 7 may be a robotic arm, etc. The sensing device 71 provides force feedback for the robotic arm to accurately grasp an object. The sensing device 71 is the sensing device described in the above embodiment, and will not be described in detail here.

[0086] In addition, in the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", "stacked" and the like should be understood in a broad sense, for example, it can be fixedly connected, detachably connected, or integrated; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0087] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A sensing device, characterized in that: The sensing device comprises: substrate; A sensing layer, wherein the sensing layer is disposed on the substrate, the sensing layer comprises a plurality of sensing element groups, each of the sensing element groups comprises two symmetrically arranged sensing elements; the sensing elements comprise one-dimensional material layers and two-dimensional material layers that are alternately stacked, and the quantum tunneling effect is used to change the resistance of the sensing elements when the sensing elements are subjected to different forces; the material of the one-dimensional material layer is one of nano carbon black, single-walled or multi-walled carbon nanotubes; the material of the two-dimensional material layer is metal carbonitride or graphene; an elastic layer, wherein the elastic layer is disposed on the two sensing elements of the sensing element group, so that when the elastic layer is subjected to shear force or is pressed by an uneven surface, portions of the elastic layer corresponding to the two sensing elements undergo different deformations, so that the two sensing elements in the sensing element group undergo different deformations, thereby generating different electrical signals; The elastic layer includes elastic blocks, and different elastic blocks are respectively provided on the two sensing elements of the sensing element group, and the elastic blocks on the two sensing elements of the sensing element group are symmetrically arranged, so that when the elastic blocks on the two sensing elements of the sensing element group are pressed by an uneven surface, the elastic blocks on the two sensing elements of the sensing element group undergo different deformations, so that the two sensing elements of the sensing element group undergo different deformations, thereby generating different electrical signals; Alternatively, the elastic layer includes an elastic block, and one of the elastic blocks is correspondingly arranged on the two sensing elements of the sensing element group, so that when the elastic blocks on the two sensing elements of the sensing element group are subjected to shear force or pressure from an uneven surface, the parts of the elastic blocks on the two sensing elements of the sensing element group corresponding to the two sensing elements undergo different deformations, thereby causing the two sensing elements of the sensing element group to undergo different deformations, thereby generating different electrical signals.

2. The sensing device according to claim 1, characterized in that: The orthographic projection of the surface of the elastic block facing the sensing element on the substrate covers the orthographic projection of the sensing element on the substrate.

3. The sensing device according to claim 1, characterized in that: The sensing device further comprises a plurality of electrodes and a plurality of electrode leads extending on the substrate. The plurality of electrodes are arranged at the periphery of the sensing layer. One electrode is connected to one electrode lead, and every two electrode leads are respectively connected to one sensing element.

4. The sensing device according to claim 3, characterized in that: The sensing device comprises a plurality of sensing element groups, which are arranged in sequence along a circumferential direction on the substrate, and the two sensing elements in each sensing element group are symmetrically arranged with the center of a circle corresponding to the circumferential direction as the center.

5. The sensing device according to claim 4, characterized in that: The sensing element is arranged to extend in a serpentine shape from a first end to a second end along the surface of the substrate, and the first end and the second end are respectively connected to an electrode lead, wherein the arc width of the end of the sensing element away from the center of the circle is greater than the arc width of the end close to the center of the circle, forming a fan-shaped structure.

6. The sensing device according to claim 4, characterized in that: The sensing element covers a portion of the two electrode leads connected thereto, and the portions of the two electrode leads covered by the sensing element form an interdigitated electrode structure.

7. The sensing device according to claim 3, characterized in that: The sensing device further comprises a packaging layer, which covers the sensing element and at least a portion of the electrode lead connected to the sensing element and close to the sensing element, and the elastic layer is arranged on a side of the packaging layer away from the sensing layer.

8. The sensing device according to claim 1, characterized in that: The substrate is a flexible body.

9. A robot, characterized in that: The robot comprises the sensing device according to any one of claims 1 to 8.

10. A method for preparing a sensing device, characterized in that: The preparation method comprises: providing a substrate; A sensing layer is formed on the substrate, wherein the sensing layer comprises a plurality of sensing element groups, each of which comprises two symmetrically arranged sensing elements; the sensing elements comprise one-dimensional material layers and two-dimensional material layers which are alternately stacked, and the quantum tunneling effect is used to change the resistance of the sensing elements when the sensing elements are subjected to different forces; the material of the one-dimensional material layer is one of nano carbon black, single-walled or multi-walled carbon nanotubes; the material of the two-dimensional material layer is metal carbon nitride or graphene; An elastic layer is formed on the sensing layer, wherein the elastic layer is formed on the two sensing elements of the sensing element group, so that when the elastic layer is subjected to shear force or is pressed by an uneven surface, portions of the elastic layer corresponding to the two sensing elements undergo different deformations, so that the two sensing elements in the sensing element group undergo different deformations, thereby generating different electrical signals; The elastic layer includes elastic blocks, and different elastic blocks are respectively provided on the two sensing elements of the sensing element group, and the elastic blocks on the two sensing elements of the sensing element group are symmetrically arranged, so that when the elastic blocks on the two sensing elements of the sensing element group are pressed by an uneven surface, the elastic blocks on the two sensing elements of the sensing element group undergo different deformations, so that the two sensing elements of the sensing element group undergo different deformations, thereby generating different electrical signals; Alternatively, the elastic layer includes an elastic block, and one of the elastic blocks is correspondingly arranged on the two sensing elements of the sensing element group, so that when the elastic blocks on the two sensing elements of the sensing element group are subjected to shear force or pressure from an uneven surface, the parts of the elastic blocks on the two sensing elements of the sensing element group corresponding to the two sensing elements undergo different deformations, thereby causing the two sensing elements of the sensing element group to undergo different deformations, thereby generating different electrical signals.

Images