Dicing die-bonding film

Abstract

The present application provides a cut chip bonding film which enables good pickup of a semiconductor chip with an adhesive layer after being cut even after a long time has passed after manufacture. The cut chip bonding film is provided with: a cut tape having a layered structure including a base material and an adhesive layer; and an adhesive layer which is releasably bonded to the adhesive layer in the cut tape, the adhesive layer including: a polymer having a structural portion derived from a crosslinking agent including a radical polymerizable functional group and a first functional group other than the radical polymerizable functional group, and maintaining radical polymerizability of the radical polymerizable functional group; and a radical polymerization initiator having a second functional group capable of reacting with the first functional group.

Description

TECHNICAL FIELD

[0001] The present application relates to a dicing die bond film. More specifically, the present application relates to a dicing die bond film which can be used in the manufacturing process of a semiconductor device. BACKGROUND

[0002] In the manufacturing process of a semiconductor device, a dicing die bond film is sometimes used in the process of obtaining a semiconductor chip having a die bond adhesive film of a size corresponding to a chip, i.e., a semiconductor chip with a die bond adhesive layer. The dicing die bond film has a size corresponding to a semiconductor wafer as a processing target, for example, has a dicing tape composed of a base material and an adhesive layer, and a die bond film (adhesive layer) peelably bonded to the adhesive layer side.

[0003] As one of the methods for obtaining a semiconductor chip with an adhesive layer using a dicing die bond film, a method is known which involves the following steps: a dicing tape in the dicing die bond film is expanded to cut the die bond film. First, a semiconductor wafer is attached to the die bond film of the dicing die bond film. The semiconductor wafer is processed, for example, in such a manner that it can be singulated into a plurality of semiconductor chips by being cut together with the die bond film hereafter.

[0004] Then, to cut the die bond film on the dicing tape, the dicing tape of the dicing die bond film is stretched along two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer using an expansion device. In this expansion step, the semiconductor wafer on the die bond film is also cut at a position corresponding to the cutting position in the die bond film, and the semiconductor wafer is singulated into a plurality of semiconductor chips on the dicing die bond film or the dicing tape.

[0005] Then, a re-expansion step is performed to widen the interval distance for the plurality of semiconductor chips with the die bond film cut on the dicing tape. Then, for example, after a cleaning step, each semiconductor chip is picked up from the lower side of the dicing tape together with the die bond film of a size corresponding to a chip bonded thereto using a needle-like member of a pickup mechanism. Thereby, a semiconductor chip with a die bond film, i.e., an adhesive layer is obtained. The semiconductor chip with the adhesive layer is fixed to an adherend such as a mounting substrate by chip bonding with the adhesive layer thereof.

[0006] Regarding the technology related to the dicing die bond film used as above, for example, it is described in Patent Documents 1 to 3.

[0007] PRIOR ART DOCUMENTS

[0008] PATENT DOCUMENTS

[0009] Patent Literature 1: Japanese Patent Application Laid-Open (JP A) No. 2007-2173

[0010] Patent Literature 2: Japanese Patent Application Laid-Open (JP A) No. 2010-177401

[0011] Patent Literature 3: Japanese Patent Application Laid-Open (JP A) No. 2016-115804 SUMMARY

[0012] Problem to be solved by the invention

[0013] In a semiconductor manufacturing process, in the case where a dicing die bond film that has been stored for a long time after manufacture is used, at the time of the above-described pickup, sometimes even after irradiation of a radiation line to an adhesive layer in a dicing tape to cure the adhesive layer and reduce the adhesion of the adhesive layer to the adhesive layer, it is difficult to smoothly pick up the semiconductor chip with the adhesive layer.

[0014] The present application was made in view of the above-described problems, and aims to provide a dicing die bond film that enables good pickup of a semiconductor chip with an adhesive layer after dicing even after a long time after manufacture. Further, another object of the present application is to provide a dicing die bond film that enables good pickup of a semiconductor chip with an adhesive layer after dicing.

[0015] Solution for solving the problem

[0016] The present inventors and others made intensive studies in order to achieve the above-described objects, and as a result, found that when a dicing die bond film having a dicing tape having a layered structure including a base material and an adhesive layer, and an adhesive layer that is releasably adhered to the adhesive layer in the dicing tape, the adhesive layer including a polymer having a structural portion derived from a crosslinking agent including a radical polymerizable functional group and a first functional group other than the radical polymerizable functional group, and maintaining a state of radical polymerizability of the radical polymerizable functional group, and a radical polymerization initiator having a second functional group capable of reacting with the first functional group, is used, good pickup of a semiconductor chip with an adhesive layer after dicing can be achieved even after a long time after manufacture. The present application was completed based on such insight.

[0017] That is, the present application provides a dicing die bonding film (sometimes referred to as "dicing die bonding film of the first application") having: a dicing tape having a layered structure including a base material and an adhesive layer; and an adhesive layer releasably bonded to the adhesive layer in the dicing tape, the adhesive layer including: a polymer having a structural portion derived from a crosslinking agent including a radical polymerizable functional group and a first functional group other than the radical polymerizable functional group, and maintaining a state of radical polymerizability of the radical polymerizable functional group; and a radical polymerization initiator having a second functional group capable of reacting with the first functional group. The dicing die bonding film of such a configuration can be used to obtain a semiconductor die with an adhesive layer during the manufacturing process of a semiconductor device.

[0018] The adhesive layer of the dicing tape in the dicing die bonding film of the first application includes a polymer having a structural portion derived from a crosslinking agent including a radical polymerizable functional group and a first functional group other than the radical polymerizable functional group, and maintaining a state of radical polymerizability of the radical polymerizable functional group, as described above. Such a polymer can be obtained, for example, by polymerizing (copolymerizing) a raw monomer including a monomer component capable of reacting with the first functional group to obtain a polymer, and then causing the crosslinking agent (i.e., a crosslinking agent including a radical polymerizable functional group and a first functional group) to undergo a condensation reaction or an addition reaction with the polymer while maintaining the state of radical polymerizability of the radical polymerizable functional group, thereby obtaining it. The adhesive layer including the polymer thus obtained has a radical polymerizability maintained by the polymer, and thus undergoes polymerization and curing by irradiation of a radiation line, thereby reducing the adhesion. Therefore, for example, when the dicing die bonding film is used in the dicing process, the adhesive layer can be inhibited / prevented from floating from the adhesive layer using the state in which the adhesive layer exhibits a relatively high adhesion, and in the subsequent pick-up process, the pick-up can be easily performed by reducing the adhesion of the adhesive layer.

[0019] Further, the adhesive layer of the dicing tape in the dicing die-bonding film of the first invention contains a radical polymerization initiator having a second functional group capable of reacting with the first functional group as described above. Thus, the radical polymerization initiator captures the crosslinking agent remaining in the adhesive layer and not incorporated into the polymer during storage of the dicing die-bonding film before use, inhibits curing of the adhesive layer during storage due to reaction of the crosslinking agent with the polymer or reaction of the crosslinking agent with each other, and promotes curing of the adhesive layer upon irradiation of the adhesive layer with a radiation ray by reacting with the radical polymerizable functional group in the polymer. Therefore, the dicing die-bonding film of the first invention sufficiently reduces the adhesion of the adhesive layer upon irradiation of the adhesive layer with a radiation ray even after a long period of time after manufacture, and as a result, enables good picking up of the semiconductor chips with the adhesive layer after dicing in the picking-up process.

[0020] Further, the present invention provides a dicing die-bonding film (sometimes referred to as "dicing die-bonding film of the second invention") having: a dicing tape having a layered structure including a base material and an adhesive layer; and an adhesive layer releasably bonded to the adhesive layer in the dicing tape, the adhesive layer containing a polymer having a structural portion derived from a crosslinking agent containing a radical polymerizable functional group and a first functional group other than the radical polymerizable functional group, the radical polymerizable functional group in the structural portion derived from the crosslinking agent being polymerized by a radical polymerization initiator having a second functional group capable of reacting with the first functional group. The dicing die-bonding film having such a configuration can be used to obtain semiconductor chips with an adhesive layer during manufacture of semiconductor devices.

[0021] The adhesive layer of the dicing tape in the dicing die-bonding film of the second application contains a polymer having a structural portion derived from a cross-linking agent containing a radically polymerizable functional group and a first functional group other than the radically polymerizable functional group, as described above. The radically polymerizable functional group in the structural portion derived from the cross-linking agent described above is polymerized by a radical polymerization initiator having a second functional group capable of reacting with the first functional group. This polymer can be obtained by polymerizing the polymer contained in the adhesive layer of the dicing tape in the dicing die-bonding film of the first application using the radical polymerization initiator described above (i.e., a radical polymerization initiator having a second functional group capable of reacting with the first functional group), thereby obtaining. That is, the dicing die-bonding film of the second application is obtained by curing the adhesive layer in the dicing die-bonding film of the first application by irradiation with radiation. Such a dicing die-bonding film of the second application can suppress deepening of the curing of the adhesive layer even after a long period of time, and thus, for the semiconductor die with the adhesive layer after dicing, good pickup can be achieved in the pickup process.

[0022] Further, for the dicing die-bonding film of the first and second applications, each polymer contained in the adhesive layer preferably has a configuration containing a structural unit derived from a monomer component having a third functional group capable of reacting with the first functional group, and the structural unit derived from the monomer component and the structural portion derived from the cross-linking agent are bonded by chemical reaction of the first functional group and the third functional group. A polymer having such a configuration can be obtained by using the monomer component having the third functional group capable of reacting with the first functional group as the monomer component capable of reacting with the first functional group.

[0023] Further, for the dicing die-bonding film of the first and second applications, the second functional group is preferably a hydroxyl group. That is, the radical polymerization initiator having the second functional group is preferably a hydroxyl group-containing radical polymerization initiator. In order to maintain radical polymerizability of the cross-linking agent after the cross-linking agent is incorporated into the polymer, the first functional group needs to have reactivity with a functional group (e.g., the third functional group) in a precursor polymer before the cross-linking agent is incorporated, and in this case, the second functional group also needs to have reactivity with the first functional group as with the functional group (e.g., the third functional group) in the precursor polymer. Therefore, from the viewpoint of easiness of production or acquisition of such a precursor polymer (e.g., a precursor polymer having the third functional group), a cross-linking agent having the first functional group, and a radical polymerization initiator having the second functional group, the above configuration is preferred.

[0024] Further, for the dicing die bond film of the first and second inventions, it is preferable that the above-mentioned first functional group be a functional group capable of reacting with a hydroxyl group. That is, it is preferable that the above-mentioned crosslinking agent be a crosslinking agent having a functional group capable of reacting with a hydroxyl group and a radical polymerizable functional group. In order to maintain the radical polymerizability of the above-mentioned crosslinking agent even after the crosslinking agent is incorporated into a polymer, the above-mentioned first functional group needs to have reactivity with a functional group (e.g., the above-mentioned third functional group) in a precursor polymer before the crosslinking agent is incorporated. In this case, the first functional group needs to have reactivity with both the second functional group and the functional group (e.g., the above-mentioned third functional group) in the above-mentioned precursor polymer. Therefore, from the viewpoint of easiness in production or obtainment of such a precursor polymer (e.g., a precursor polymer having the above-mentioned third functional group), a crosslinking agent having the first functional group, and a radical polymerization initiator having the second functional group, the above-mentioned constitution is preferable.

[0025] Further, for the dicing die bond film of the first and second inventions, it is preferable that the structural portion derived from the above-mentioned crosslinking agent be a structural portion derived from a crosslinking agent having a (meth)acryl group and an isocyanate group. That is, it is preferable that the above-mentioned crosslinking agent be a crosslinking agent having a (meth)acryl group and an isocyanate group. In order to maintain the radical polymerizability of the above-mentioned crosslinking agent even after the crosslinking agent is incorporated into a polymer, the above-mentioned first functional group needs to have reactivity with a functional group (e.g., the above-mentioned third functional group) in a precursor polymer before the crosslinking agent is incorporated. In this case, the first functional group needs to have reactivity with both the second functional group and the functional group (e.g., the above-mentioned third functional group) in the above-mentioned precursor polymer. Therefore, from the viewpoint of easiness in production or obtainment of such a precursor polymer (e.g., a precursor polymer having the above-mentioned third functional group), a crosslinking agent having the first functional group, and a radical polymerization initiator having the second functional group, the above-mentioned constitution is preferable. From the viewpoint of easiness in reaction tracing and easiness in production or obtainment of the above-mentioned precursor polymer (e.g., a precursor polymer having the above-mentioned third functional group), the crosslinking agent, and the radical polymerization initiator, the constitution in which the first functional group is an isocyanate group, the second functional group is a hydroxyl group, and the third functional group is a hydroxyl group is particularly preferable.

[0026] Effects of the invention

[0027] The dicing die bond film of the first invention can achieve good pickup of a semiconductor chip with an adhesive layer after dicing even after a long period of time has passed after manufacture. Further, the dicing die bond film of the second invention can be obtained from the dicing die bond film of the first invention, and can achieve good pickup of a semiconductor chip with an adhesive layer after dicing. Note that in this specification, the dicing die bond film of the first and second inventions will sometimes be collectively referred to as "the dicing die bond film of the invention". BRIEF DESCRIPTION OF DRAWINGS

[0028] Figure 1 This is a cross-sectional schematic diagram illustrating one embodiment of the chip-bonding film of the first invention.

[0029] Figure 2 Indicates use Figure 1 This is a part of the manufacturing process of a semiconductor device that cuts a chip to bond a thin film.

[0030] Figure 3 express Figure 2 The subsequent process of the process shown.

[0031] Figure 4 express Figure 3 The subsequent process of the process shown.

[0032] Figure 5 express Figure 4 The subsequent process of the process shown.

[0033] Figure 6 express Figure 5 The subsequent process of the process shown.

[0034] Figure 7 express Figure 6 The subsequent process of the process shown.

[0035] Figure 8 Indicates use Figure 1 This is a partial step in a variation of the method for manufacturing a semiconductor device by cutting a chip bonding film.

[0036] Figure 9 Indicates use Figure 1 This is a partial step in a variation of the method for manufacturing a semiconductor device by cutting a chip bonding film.

[0037] Figure 10 Indicates use Figure 1 This is a partial step in a variation of the method for manufacturing a semiconductor device by cutting a chip bonding film.

[0038] Figure 11 Indicates use Figure 1 This is a partial step in a variation of the method for manufacturing a semiconductor device by cutting a chip bonding film.

[0039] Reference Signs List

[0040] 1. Cutting chip bonding film

[0041] 10 Cutting strip

[0042] 11 Substrate

[0043] 12 Adhesive Layer

[0044] 20, 21 adhesive layer

[0045] W, 30A, 30C semiconductor wafer

[0046] 30B semiconductor wafer segment

[0047] 30a segment groove

[0048] 30b modified region

[0049] 31 semiconductor chip DETAILED DESCRIPTION

[0050] [Cutting chip bonding film]

[0051] The cutting chip bonding film of the present application is provided with: a cutting tape having a laminated structure including a base material and an adhesive layer; and an adhesive layer which is releasably bonded to the adhesive layer in the cutting tape.

[0052] The adhesive layer of the cutting tape in the cutting chip bonding film of the first application further includes: a polymer having a structural portion derived from a crosslinking agent including a radical polymerizable functional group and a first functional group other than the radical polymerizable functional group, and maintaining a state of radical polymerizability of the radical polymerizable functional group; and a radical polymerization initiator having a second functional group capable of reacting with the first functional group.

[0053] Further, the adhesive layer of the cutting tape in the cutting chip bonding film of the second application includes a polymer having a structural portion derived from a crosslinking agent including a radical polymerizable functional group and a first functional group other than the radical polymerizable functional group, the radical polymerizable functional group in the structural portion derived from the crosslinking agent is polymerized by a radical polymerization initiator having a second functional group capable of reacting with the first functional group.

[0054] The polymer in the adhesive layer in the cutting chip bonding film of the second application can be obtained by polymerizing the polymer contained in the adhesive layer of the cutting tape in the cutting chip bonding film of the first application by irradiating a radiation ray using the radical polymerization initiator (i.e., a radical polymerization initiator having a second functional group capable of reacting with a first functional group). That is, the cutting chip bonding film of the second application is obtained by curing the adhesive layer in the cutting chip bonding film of the first application by irradiating a radiation ray. Such a cutting chip bonding film of the second application can suppress deepening of curing of the adhesive layer even after a long period of time, and thus, for the semiconductor chip with the adhesive layer after being cut, good picking up can be achieved in the picking up process.

[0055] An embodiment of the cutting die bonding film of the present application will be described below. Figure 1 is a cross-sectional view showing an embodiment of the cutting die bonding film of the first application. As shown in Figure 1 the cutting die bonding film 1 has a cutting tape 10 and an adhesive layer 20 laminated on an adhesive layer 12 in the cutting tape 10, which can be used in an expansion process during a process of obtaining a semiconductor chip with an adhesive layer in the manufacture of a semiconductor device.

[0056] The cutting die bonding film 1 has a disc shape, and the size of the disc shape corresponds to a semiconductor wafer as a processing target in the process of manufacturing a semiconductor device. The diameter of the cutting die bonding film 1 is in the range of, for example, 345 to 380 mm (12-inch wafer corresponding type), 245 to 280 mm (8-inch wafer corresponding type), 195 to 230 mm (6-inch wafer corresponding type), or 495 to 530 mm (18-inch wafer corresponding type). The cutting tape 10 in the cutting die bonding film 1 has a laminated structure including a base material 11 and an adhesive layer 12.

[0057] (Base material)

[0058] The base material in the cutting tape is an element that functions as a support in the cutting tape, the cutting die bonding film. As the base material, for example, a plastic base material (particularly, a plastic film) can be listed. The above base material can be either a single layer or a laminate of the same base material or different base materials.

[0059] As the resin constituting the above plastic base material, for example, the following can be listed: polyolefin resins such as low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultralow-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolymer polypropylene, polybutylene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer; polyurethane; polyesters such as polyethylene terephthalate (PET), polyethylene naphthalate, polybutylene terephthalate (PBT); polycarbonate; polyimide; polyether ether ketone; polyether imide; polyamides such as aramid, wholly aromatic polyamide; polyphenylene sulfide; fluororesin; polyvinyl chloride; polyvinylidene chloride; cellulose resin; silicone resin, and the like. From the viewpoint of ensuring good heat shrinkability of the base material and easily maintaining the chip interval distance by partial heat shrinkage of the cutting tape or the base material in the later-described normal-temperature expansion process, the base material preferably contains ethylene-vinyl acetate copolymer as a main component.

[0060] Note that the main component of the substrate refers to a component that occupies the largest mass proportion among the constituent components. The above resin can be used singly or in two or more kinds. When the adhesive layer is a radiation-curable adhesive layer as described later, the substrate preferably has radiation-transmitting properties.

[0061] When the substrate is a plastic film, the above plastic film can be unoriented or oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film can be heat-shrinkable in the at least one direction. When having heat-shrinkability, the outer peripheral portion of the semiconductor wafer of the dicing tape can be heat-shrunk, whereby the semiconductor chips with the adhesive layer after singulation can be fixed in a state in which the interval between the semiconductor chips is widened, and thus the semiconductor chips can be easily picked up. In order to impart isotropic heat-shrinkability to the substrate and the dicing tape, the substrate is preferably a biaxially oriented film. Note that the above plastic film oriented in at least one direction can be obtained by stretching an unstretched plastic film in the at least one direction (uniaxial stretching, biaxial stretching, etc.).

[0062] The heat-shrinkage ratio of the substrate and the dicing tape in a heat treatment test performed at a heating temperature of 100°C and a heating treatment time of 60 seconds is preferably 1 to 30%, more preferably 2 to 25%, further preferably 3 to 20%, and particularly preferably 5 to 20%. The above heat-shrinkage ratio is preferably the heat-shrinkage ratio in at least one of the MD direction and the TD direction.

[0063] For the purpose of improving adhesion, retention, etc. to the adhesive layer, the adhesive layer-side surface of the substrate can be subjected to a surface treatment such as corona discharge treatment, plasma treatment, frosted finish treatment, ozone exposure treatment, flame exposure treatment, high-voltage electric shock exposure treatment, ionizing radiation treatment, etc.; chemical treatment such as chromic acid treatment; easy-adhesion treatment using a coating agent (primer); etc. In addition, in order to impart antistatic properties, a conductive vapor-deposited layer containing a metal, an alloy, an oxide thereof, etc. can be provided on the surface of the substrate. The surface treatment for improving adhesion is preferably performed on the entire surface of the adhesive layer side of the substrate.

[0064] From the viewpoint of ensuring the strength of the substrate to function as a support for the dicing tape and the dicing die-bonding film, the thickness of the substrate is preferably 40 μm or more, more preferably 50 μm or more, further preferably 55 μm or more, and particularly preferably 60 μm or more. In addition, from the viewpoint of imparting moderate flexibility to the dicing tape and the dicing die-bonding film, the thickness of the substrate is preferably 200 μm or less, more preferably 180 μm or less, and further preferably 150 μm or less.

[0065] (Adhesive layer)

[0066] The adhesive layer in the dicing die bonding film according to the above embodiment contains a polymer having a structural portion derived from a crosslinking agent containing a radical-polymerizable functional group and a first functional group other than the radical-polymerizable functional group, and maintaining radical polymerizability of the radical-polymerizable functional group, and a radical polymerization initiator having a second functional group capable of reacting with the first functional group.

[0067] Such a polymer can be obtained, for example, by polymerizing (copolymerizing) a raw monomer containing a monomer component having a functional group capable of reacting with the first functional group (e.g., a third functional group described later) (i.e., a precursor polymer), and then, by causing the above crosslinking agent (i.e., a crosslinking agent having a radical-polymerizable functional group and a first functional group) to undergo a condensation reaction or an addition reaction with the above precursor polymer in a state of maintaining radical polymerizability of the radical-polymerizable functional group, thereby obtaining. In the case of the adhesive layer containing such a polymer obtained by such an operation, the polymer maintains radical polymerizability, and thus, by irradiating the adhesive layer with a radiation line, polymerization and curing occur, and the adhesive force is reduced. Therefore, for example, when the dicing die bonding film is used in a dicing process, it is possible to inhibit / prevent the adhesive layer from floating from the adhesive layer in a state in which the adhesive layer exhibits a relatively high adhesive force, and in addition, in a subsequent pick-up process, by reducing the adhesive force of the adhesive layer, it is possible to easily perform pick-up.

[0068] In addition, the above radical polymerization initiator captures the above crosslinking agent remaining in the adhesive layer, which is not incorporated into the polymer, in storage of the dicing die bonding film before use, and it is possible to inhibit curing in storage of the adhesive layer caused by reaction of the above crosslinking agent with the polymer or reaction of the crosslinking agents with each other, and in addition, when the adhesive layer is irradiated with a radiation line, it is possible to act on the radical-polymerizable functional group in the above polymer, thereby promoting curing of the adhesive layer.

[0069] Therefore, the dicing die bonding film according to the above embodiment is such that even after a long period of time has passed after manufacture, when the adhesive layer is irradiated with a radiation line, the adhesive force of the adhesive layer is sufficiently reduced, and as a result, in a pick-up process, it is possible to achieve good pick-up of a semiconductor chip with an adhesive layer after being cut. Note that in the present specification, the above "crosslinking agent having a radical-polymerizable functional group and a first functional group other than the radical-polymerizable functional group" is sometimes referred to as "crosslinking agent X".

[0070] The above polymer in the adhesive layer has a structural portion derived from a crosslinking agent (crosslinking agent X) containing a radical-polymerizable functional group and a first functional group other than the radical-polymerizable functional group, and maintains radical polymerizability of the above radical-polymerizable functional group. That is, the above crosslinking agent X before being incorporated into the above polymer has a radical-polymerizable functional group and a reactive functional group other than the radical-polymerizable functional group (first functional group). As the above radical-polymerizable functional group, a carbon-carbon double bond having a radiation line polymerizability can be cited, for example, a vinyl group, a propenyl group, an isopropenyl group, a (meth)acryloyl group (acryloyl group, methacryloyl group), and the like. Among them, a (meth)acryloyl group is preferred. That is, the above crosslinking agent X is preferably a crosslinking agent having a (meth)acryloyl group and a first functional group.

[0071] The first functional group is a functional group other than the radical-polymerizable functional group, and is a functional group capable of reacting with the second functional group. As the first functional group, for example, a carboxyl group, an epoxy group, an aziridinyl group, a hydroxyl group, an isocyanate group, and the like can be cited. Among them, a functional group capable of reacting with a hydroxyl group is preferred, and an isocyanate group is more preferred. That is, the above crosslinking agent X is preferably a crosslinking agent having a functional group capable of reacting with a hydroxyl group (particularly an isocyanate group) and a radical-polymerizable functional group. In order to maintain the radical polymerizability of the above crosslinking agent X also after being incorporated into a polymer, the above first functional group needs to have reactivity with a functional group (for example, a third functional group described later) in a precursor polymer before the crosslinking agent X is incorporated. At this time, the first functional group needs to have reactivity with both the second functional group and the functional group (for example, the third functional group described later) in the above precursor polymer. Therefore, from the viewpoint of easiness in production or acquisition of such a precursor polymer, the crosslinking agent X, and a radical polymerization initiator having the second functional group, the above constitution is preferred.

[0072] Therefore, the above crosslinking agent X is particularly preferably a crosslinking agent having a functional group capable of reacting with a hydroxyl group (particularly an isocyanate group) and a (meth)acryloyl group. That is, the structural portion derived from the above crosslinking agent X is preferably a structural portion derived from a crosslinking agent having a functional group capable of reacting with a hydroxyl group (particularly an isocyanate group) and a (meth)acryloyl group.

[0073] As the above crosslinking agent X, for example, methacryloyl isocyanate, 2-acryloyloxyethyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, and the like can be cited. Among them, 2-acryloyloxyethyl isocyanate, 2-methacryloyloxyethyl isocyanate are preferred.

[0074] The above-mentioned polymer contained in the adhesive layer is obtained, for example, as described above, by polymerizing (copolymerizing) a raw monomer containing a monomer component having a third functional group capable of reacting with the above-mentioned first functional group to obtain a precursor polymer, and reacting the third functional group in the precursor polymer with the first functional group in the crosslinking agent X, thereby. That is, the above-mentioned polymer preferably contains a structure containing a structural unit derived from a monomer component having a third functional group capable of reacting with the above-mentioned first functional group, and a structure derived from the above-mentioned monomer component is bonded to a structure derived from the above-mentioned crosslinking agent X through chemical reaction of the above-mentioned first functional group and the above-mentioned third functional group.

[0075] As the radical polymerizable functional group possessed by the monomer component having the above-mentioned third functional group, a carbon-carbon double bond having a radiation line polymerizability can be cited, for example, a vinyl group, a propenyl group, an isopropenyl group, a (meth)acryloyl group (acryloyl group, methacryloyl group), and the like can be cited. Among them, a (meth)acryloyl group is preferred. The third functional group is a functional group capable of reacting with the first functional group, for example, a carboxyl group, an epoxy group, an aziridinyl group, a hydroxyl group, an isocyanate group, and the like can be cited. Among them, a hydroxyl group is preferred.

[0076] As the monomer component having the above-mentioned third functional group, a carboxyl group-containing monomer, an acid anhydride monomer, an epoxy group-containing monomer such as a glycidyl group-containing monomer, a nitrogen-containing monomer, a hydroxyl group-containing monomer, an isocyanate group-containing monomer, and the like can be cited. The monomer component having the above-mentioned third functional group can be used only one kind, or two or more kinds can be used.

[0077] As the above-mentioned carboxyl group-containing monomer, for example, acrylic acid, methacrylic acid, (meth)acrylic acid carboxyethyl ester, (meth)acrylic acid carboxypentyl ester, itaconic acid, maleic acid, fumaric acid, crotonic acid, and the like can be cited.

[0078] As the above-mentioned acid anhydride monomer, for example, maleic anhydride, itaconic anhydride, and the like can be cited.

[0079] As the above-mentioned glycidyl group-containing monomer, for example, (meth)acrylic acid glycidyl ester, (meth)acrylic acid methyl glycidyl ester, and the like can be cited.

[0080] As the above-mentioned hydroxyl group-containing monomer, for example, (meth)acrylic acid 2-hydroxyethyl ester, (meth)acrylic acid 2-hydroxypropyl ester, (meth)acrylic acid 4-hydroxybutyl ester, (meth)acrylic acid 6-hydroxyhexyl ester, (meth)acrylic acid 8-hydroxyoctyl ester, (meth)acrylic acid 10-hydroxydecyl ester, (meth)acrylic acid 12-hydroxylauryl ester, (meth)acrylic acid (4-hydroxymethylcyclohexyl)methyl ester, and the like can be cited.

[0081] As the monomer containing an isocyanate group described above, for example, methacryloylisocyanate, 2-propenoyloxyethyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, and the like can be exemplified.

[0082] As the monomer having the above-described 3rd functional group, a monomer containing a hydroxyl group is preferable, and 2-hydroxyethyl (meth)acrylate is more preferable. That is, the above-described polymer preferably contains a structural unit derived from a monomer containing a hydroxyl group (particularly 2-hydroxyethyl (meth)acrylate).

[0083] The proportion of the monomer component having the 3rd functional group among all the monomer components other than the crosslinking agent X used for forming the above-described polymer is preferably 5 to 40 mol%, and more preferably 10 to 30 mol% from the viewpoint of enabling the crosslinking agent X to be sufficiently incorporated into the polymer and maintaining the adhesiveness of the adhesive layer.

[0084] The molar ratio of the structural portion derived from the above-described crosslinking agent X with respect to the structural unit derived from the monomer component having the 3rd functional group is preferably 0.2 or more, and more preferably 0.3 or more. In addition, the above-described molar ratio is preferably 2.0 or less, and more preferably 1.4 or less. When the above-described molar ratio is 0.2 or more, a sufficient amount of the radical polymerizable functional group can be introduced into the above-described polymer, and the adhesion reduction effect by radiation curing can be sufficiently exhibited. When the above-described molar ratio is 2.0 or less, the amount of the crosslinking agent X remaining in the adhesive layer is not excessive, and a more favorable pick-up can be achieved in the pick-up process.

[0085] The adhesive layer preferably contains the above-described polymer as a base polymer (a polymer having the highest content in terms of mass proportion). The above-described polymer in the adhesive layer is preferably an acrylic polymer. The above-described acrylic polymer is a polymer containing a structural unit derived from an acrylic monomer (a monomer component having a (meth)acryloyl group in the molecule) as a structural unit of the polymer.

[0086] The above-described acrylic polymer is preferably a polymer in which the content of the structural unit derived from a (meth)acrylate is the highest in terms of mass proportion. Note that the acrylic polymer can be used singly or two or more kinds can be used. In addition, in the present specification, "(meth)acrylic acid" means "acrylic acid" and / or "methacrylic acid" (either one or both of "acrylic acid" and "methacrylic acid"), and the same applies to the other cases.

[0087] As the above (meth)acrylate, for example, a hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group can be exemplified. As the hydrocarbon group-containing (meth)acrylate, an alkyl (meth)acrylate, a cycloalkyl (meth)acrylate, an aryl (meth)acrylate, and the like can be exemplified. As the above alkyl (meth)acrylate, for example, a methyl (meth)acrylate, an ethyl (meth)acrylate, a propyl (meth)acrylate, an isopropyl (meth)acrylate, a butyl (meth)acrylate, an isobutyl (meth)acrylate, a sec-butyl (meth)acrylate, a t-butyl (meth)acrylate, a pentyl (meth)acrylate, an isopentyl (meth)acrylate, a hexyl (meth)acrylate, a heptyl (meth)acrylate, an octyl (meth)acrylate, a 2-ethylhexyl (meth)acrylate, an isooctyl (meth)acrylate, a nonyl (meth)acrylate, a decyl (meth)acrylate, an isodecyl (meth)acrylate, an undecyl (meth)acrylate, a dodecyl (meth)acrylate (laurate), a tridecyl (meth)acrylate, a tetradecyl (meth)acrylate, a hexadecyl (meth)acrylate, a octadecyl (meth)acrylate, an eicosyl (meth)acrylate, and the like can be exemplified.

[0088] As the above cycloalkyl (meth)acrylate, for example, a cyclopentyl (meth)acrylate, a cyclohexyl (meth)acrylate, and the like can be exemplified. As the above aryl (meth)acrylate, for example, a phenyl (meth)acrylate, a benzyl (meth)acrylate can be exemplified. As the hydrocarbon group-containing (meth)acrylate having an alkoxy group, a substance obtained by replacing one or more hydrogen atoms in the hydrocarbon group of the above hydrocarbon group-containing (meth)acrylate with an alkoxy group can be exemplified, and for example, a 2-methoxymethyl (meth)acrylate, a 2-methoxyethyl (meth)acrylate, a 2-methoxybutyl (meth)acrylate, and the like can be exemplified. The above hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group can be used singly or two or more kinds thereof can be used.

[0089] The above hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group preferably has a total number of carbons in the ester moiety (total number including the number of carbons of the alkoxy group when the alkoxy group is present) of 6 to 10. A hydrocarbon group-containing (meth)acrylate having a total number of carbons of the hydrocarbon group of 6 to 10 is particularly preferable. In these cases, even after a long period of time, the deepening of the curing of the adhesive layer can be suppressed, and the inhibitory property of the lifting between the adhesive layer and the adhesive layer in the expanding process and the subsequent process and the good pickability in the picking process can be balanced.

[0090] In order to cause the adhesive layer to appropriately exhibit the basic properties such as the adhesiveness due to the hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group, the proportion of the hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group in the total monomer components other than the crosslinking agent X for forming the acrylic polymer is preferably 40 mol% or more, and more preferably 60 mol% or more.

[0091] Note that in the present specification, in the above monomer components, the compound having a radiation polymerization group (for example, the crosslinking agent having a radical polymerization functional group and a first functional group) is not included in the stage of being incorporated into the polymer before the adhesive layer is irradiated with the radiation line.

[0092] The above-described acrylic polymer preferably has a monomer component having a third functional group copolymerized as described above. The above-described acrylic polymer can also include a structural unit derived from another monomer component copolyable with the above-described (meth)acrylate ester having a hydrocarbon group optionally having an alkoxy group, in addition to the above-described monomer component having a third functional group, for the purpose of modification of cohesion, heat resistance, and the like. As the above-described another monomer component, for example, a functional group-containing monomer such as a sulfonic acid group-containing monomer, a phosphoric acid group-containing monomer, a nitrogen atom-containing monomer, and the like can be exemplified. The above-described another monomer component can be used alone or two or more kinds thereof can be used.

[0093] As the above-described sulfonic acid group-containing monomer, for example, styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamido-2-methylpropane sulfonic acid, (meth)acrylamidopropyl sulfonic acid, (meth)acrylate sulfopropyl ester, (meth)acryloyloxy naphthalene sulfonic acid, and the like can be exemplified.

[0094] As the above-described phosphoric acid group-containing monomer, for example, 2-hydroxyethyl acryloyl phosphate, and the like can be exemplified.

[0095] As the above-described nitrogen atom-containing monomer, for example, a morpholine group-containing monomer such as (meth)acryloylmorpholine, a cyano group-containing monomer such as (meth)acrylonitrile, an amide group-containing monomer such as (meth)acrylamide, and the like can be exemplified.

[0096] Note that the above-described another monomer component does not include the above-described monomer component used as the crosslinking agent X (for example, a monomer component having a first functional group capable of reacting with the third functional group when a monomer component having a third functional group is used as the above-described another monomer component).

[0097] As the above-described another monomer component, a morpholine group-containing monomer is preferable. The above-described morpholine group-containing monomer is preferably (meth)acryloylmorpholine. That is, the above-described acrylic polymer preferably includes a structural unit derived from (meth)acryloylmorpholine.

[0098] In order for the adhesive layer 12 to appropriately exhibit the basic properties such as adhesiveness resulting from the (meth)acrylate ester having a hydrocarbon group optionally having an alkoxy group, the proportion of the above-described another monomer component in the total monomer components used for forming the acrylic polymer, excluding the crosslinking agent X, is preferably 40 mol% or less (for example, 3 to 40 mol%), and more preferably 30 mol% or less (for example, 10 to 30 mol%).

[0099] For the above-described acrylic polymer, in order to form a crosslinked structure in the polymer backbone thereof, a structural unit derived from a multifunctional monomer capable of copolymerizing with the monomer components forming the acrylic polymer can also be included. As the above-described multifunctional monomer, for example, hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, epoxy (meth)acrylate (e.g., poly(glycidyl (meth)acrylate)), polyester (meth)acrylate, urethane (meth)acrylate, and the like, which have a (meth)acryloyl group and another reactive functional group in the molecule, and the like can be listed. The above-described multifunctional monomer can be used alone or two or more kinds thereof can be used. In order for the adhesive layer to appropriately exhibit the basic properties such as adhesiveness due to the hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group, the proportion of the above-described multifunctional monomer in the total monomer components used for forming the acrylic polymer is preferably 40 mol% or less, more preferably 30 mol% or less.

[0100] The mass average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably 350,000 to 1,000,000. When the mass average molecular weight is 300,000 or more, there is a tendency that the amount of low molecular weight substances in the adhesive layer is small, and contamination to the adhesive layer, the semiconductor wafer, and the like can be further suppressed.

[0101] The acrylic polymer can be obtained by polymerizing one or more monomer components including an acrylic monomer. As the polymerization method, solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization, and the like can be listed.

[0102] The adhesive layer contains a radical polymerization initiator having a second functional group capable of reacting with the above-described first functional group as described above. The second functional group is a functional group capable of reacting with the first functional group. As the second functional group, for example, a carboxyl group, an epoxy group, an aziridinyl group, a hydroxyl group, an isocyanate group, and the like can be listed. Among them, a hydroxyl group is preferred. That is, the radical polymerization initiator having the above-described second functional group is preferably a hydroxyl group-containing radical polymerization initiator. In order to maintain the radical polymerizability in the above-described crosslinking agent X even after the incorporation of the crosslinking agent X into the polymer, the above-described first functional group needs to have reactivity with the functional group (e.g., the above-described third functional group) in the above-described precursor polymer, and at this time, the second functional group also needs to have reactivity with the first functional group as with the functional group (e.g., the above-described third functional group) in the above-described precursor polymer. Therefore, from the viewpoint of easiness in the production or the acquisition of such a precursor polymer, a crosslinking agent X, and a radical polymerization initiator having a second functional group, the above-described constitution is preferred.

[0103] As the combination of the above-mentioned first functional group and the above-mentioned second functional group, for example, carboxyl and epoxy group, epoxy group and carboxyl, carboxyl and aziridinyl group, aziridinyl group and carboxyl, hydroxyl and isocyanate group, isocyanate group and hydroxyl, and the like can be exemplified. Among these, from the viewpoint of easiness of reaction tracing, the combination of hydroxyl and isocyanate group, the combination of isocyanate group and hydroxyl are preferred. Particularly preferred is that the above-mentioned first functional group is a functional group capable of reacting with hydroxyl group (particularly isocyanate group), and the second functional group is hydroxyl group.

[0104] As the radical polymerization initiator having the second functional group, for example, 1-hydroxycyclohexyl phenyl ketone (for example, trade name "IRGACURE 184", manufactured by BASF Corporation), 2-methyl-2-hydroxypropiophenone (for example, trade name "IRGACURE 1173", manufactured by BASF Corporation), 4-(2-hydroxyethoxy)phenyl (2-hydroxy-2-propyl) ketone (for example, trade name "IRGACURE 2959", manufactured by BASF Corporation), trade name "IRGACURE 127", α-hydroxy-α, α'-dimethylacetophenone, and the like can be exemplified.

[0105] The content of the radical polymerization initiator having the second functional group in the adhesive layer is, for example, 0.05 to 20 parts by mass, preferably 0.1 to 10 parts by mass, and more preferably 0.5 to 5 parts by mass, relative to 100 parts by mass of the above-mentioned polymer.

[0106] The adhesive layer can contain a crosslinking agent other than the crosslinking agent X (other crosslinking agent). For example, in the case where an acrylic polymer is used as the base polymer, the acrylic polymer can be crosslinked, and the low molecular weight substance in the adhesive layer can be further reduced. In addition, the mass average molecular weight of the acrylic polymer can be increased. As the above-mentioned other crosslinking agent, for example, a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol-based compound, etc.), an aziridine compound, a melamine compound, and the like can be exemplified. In the case where the other crosslinking agent is used, the amount of use thereof is preferably 5 parts by mass or less, and more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the above-mentioned polymer.

[0107] The adhesive layer is an adhesive layer in which the adhesive force can be intentionally reduced by an action from the outside during use of the dicing die bonding film (adhesive force-reducible adhesive layer). That is, the adhesive layer in the dicing die bonding film of the first aspect of the present application is an adhesive force-reducible adhesive layer. Furthermore, the adhesive layer obtained by irradiating a polymer in the adhesive layer with a radiation ray using a radical polymerization initiator having the above-mentioned second functional group to polymerize the polymer (that is, the adhesive layer in the dicing die bonding film of the second aspect of the present application) is an adhesive layer in which the adhesive force hardly or completely does not decrease due to an action from the outside during use of the dicing die bonding film (adhesive force-non-reducible adhesive layer). The adhesive layer in the dicing die bonding film can be either an adhesive force-reducible adhesive layer or an adhesive force-non-reducible adhesive layer, and can be appropriately selected depending on the method, conditions, and the like of singulation of the semiconductor wafer using the dicing die bonding film.

[0108] Since the adhesive layer is an adhesive force-reducible adhesive layer, it is possible to use the adhesive layer in a state in which the adhesive layer exhibits a relatively high adhesive force and in a state in which the adhesive layer exhibits a relatively low adhesive force during the production process and the use process of the dicing die bonding film. For example, during the production process of the dicing die bonding film, the use of the adhesive layer in a state in which the adhesive layer exhibits a relatively high adhesive force when the adhesive layer of the dicing tape is laminated with the adhesive layer and when the dicing die bonding film is used in the dicing process can suppress / prevent the lifting of the adherend such as the adhesive layer from the adhesive layer, and on the other hand, thereafter, in the picking process for picking up the semiconductor chips with the adhesive layer from the dicing tape of the dicing die bonding film, the adhesive force of the adhesive layer can be reduced to easily perform the picking up.

[0109] The adhesive layer (for example, the adhesive layer 12) in the dicing die bonding film of the present application is an adhesive layer formed of a radiation-curable adhesive containing the above-mentioned polymer (radiation-curable adhesive layer). As the above-mentioned radiation-curable adhesive, for example, an adhesive of a type that is cured by irradiation of an electron beam, ultraviolet rays, α rays, β rays, γ rays, or X rays can be used, and an adhesive of a type that is cured by irradiation of ultraviolet rays (ultraviolet-curable adhesive) is particularly preferable. Note that, in the present specification, the "radiation-cured adhesive layer" refers to an adhesive layer formed of a radiation-curable adhesive, and includes both a radiation-cured adhesive layer that has not been irradiated with a radiation ray and a radiation-cured adhesive layer that has been cured by irradiation of a radiation ray.

[0110] The adhesive layer can be compounded with a cross-linking accelerator, an adhesion enhancer, an antioxidant, a colorant (pigment, dye, etc.), and the like, which are known and commonly used for the adhesive layer, in addition to the above-described components. As the colorant, for example, a compound that is colored by irradiation of a radiation ray can be exemplified. When the compound that is colored by irradiation of a radiation ray is contained, only the portion irradiated with the radiation ray can be colored. The compound that is colored by irradiation of a radiation ray is a compound that is colorless or pale before irradiation of a radiation ray and becomes colored by irradiation of a radiation ray, and for example, a leuco dye or the like can be exemplified. The amount of the compound that is colored by irradiation of a radiation ray is not particularly limited and can be appropriately selected.

[0111] The thickness of the adhesive layer is not particularly limited, but from the viewpoint of obtaining a balance of the adhesion of the adhesive layer before and after the radiation ray curing, it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and further preferably 5 to 25 μm.

[0112] (Adhesive layer)

[0113] The adhesive layer has a function as a heat-curable adhesive for die bonding, and further, has a function as an adhesive for holding a work such as a semiconductor wafer and a frame member such as a ring frame, as needed. The adhesive layer can be cut by applying a tensile stress, and is used by being cut by applying a tensile stress.

[0114] The adhesive layer and the adhesive constituting the adhesive layer can contain a heat-curable resin and, for example, a thermoplastic resin as a binder component, and can contain a thermoplastic resin having a heat-curable functional group that can be bonded by reaction with a curing agent. When the adhesive constituting the adhesive layer contains a thermoplastic resin having a heat-curable functional group, the adhesive does not necessarily include a heat-curable resin (epoxy resin, etc.). The adhesive layer can have a single-layer structure or a multi-layer structure.

[0115] As the thermoplastic resin, for example, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic ester copolymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamide-imide resin, fluororesin, and the like can be exemplified. The thermoplastic resin can be used alone or two or more kinds thereof can be used. As the thermoplastic resin, from the reasons that the ionic impurities are less and the heat resistance is high, and thus the bonding reliability based on the adhesive layer is easily ensured, an acrylic resin is preferred.

[0116] The above acrylic resin preferably contains a structural unit derived from a (meth)acrylate ester having a hydrocarbon group optionally having an alkoxy group as the most abundant structural unit in terms of mass proportion. As the (meth)acrylate ester having a hydrocarbon group optionally having an alkoxy group, for example, there can be mentioned the same as exemplified as the (meth)acrylate ester having a hydrocarbon group optionally having an alkoxy group used for forming the acrylic polymer that can be contained in the above-mentioned adhesive layer.

[0117] The above acrylic resin can also contain a structural unit derived from another monomer component copolymerizable with the (meth)acrylate ester having a hydrocarbon group optionally having an alkoxy group. As the above-mentioned another monomer component, for example, there can be mentioned a carboxyl group-containing monomer; an acid anhydride monomer; a hydroxyl group-containing monomer; a glycidyl group-containing monomer; a sulfonic acid group-containing monomer; a phosphoric acid group-containing monomer; a functional group-containing monomer such as acrylamide, acrylonitrile, and the like; various multifunctional monomers; and the like. Specifically, the same as exemplified as the another monomer component constituting the acrylic polymer that can be contained in the above-mentioned adhesive layer can be used.

[0118] When the adhesive layer contains a thermoplastic resin and a thermosetting resin, as the thermosetting resin, for example, there can be mentioned an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, a thermosetting polyimide resin, and the like. The above-mentioned thermosetting resin can be used singly or two or more kinds thereof can be used. From the viewpoint that there is a tendency that the content of ionic impurities and the like that can cause corrosion of the chip bonding object, i.e., a semiconductor chip, is small, as the above-mentioned thermosetting resin, an epoxy resin is preferred. In addition, as the curing agent for the epoxy resin, a phenol resin is preferred.

[0119] As the above-mentioned epoxy resin, for example, there can be mentioned an epoxy resin of a bisphenol A type, a bisphenol F type, a bisphenol S type, a brominated bisphenol A type, a hydrogenated bisphenol A type, a bisphenol AF type, a biphenyl type, a naphthalene type, a fluorene type, a phenol novolac type, an o-cresol novolac type, a trihydroxyphenylmethane type, a tetraphenyl olethane type, a hydantoin type, a trisglycidyl isocyanurate type, a glycidyl amine type, and the like. Among them, from the viewpoint that the reactivity with the phenol resin as the curing agent is high and the heat resistance is excellent, a novolac type epoxy resin, a biphenyl type epoxy resin, a trihydroxyphenylmethane type epoxy resin, a tetraphenyl olethane type epoxy resin are preferred.

[0120] As the phenol resin which can function as a curing agent for the epoxy resin, for example, there can be mentioned: a novolak type phenol resin, a resol type phenol resin, a poly-p-xylylene, and the like. As the novolak type phenol resin, for example, there can be mentioned: a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a t-butyl phenol novolak resin, a nonyl phenol novolak resin, and the like. The above-mentioned phenol resin can be used either singly or in combination of two or more. Among them, from the viewpoint that there is a tendency to improve the connection reliability of the adhesive used as the epoxy resin curing agent for the die bonding, a phenol novolak resin, a phenol aralkyl resin is preferred.

[0121] In the adhesive layer, from the viewpoint of allowing the curing reaction of the epoxy resin and the phenol resin to proceed sufficiently, the phenol resin is contained in an amount such that the hydroxyl group in the phenol resin is 0.5 to 2.0 equivalents, more preferably 0.7 to 1.5 equivalents, relative to 1 equivalent of the epoxy group in the epoxy resin component.

[0122] When the adhesive layer contains the thermosetting resin, the content ratio of the above-mentioned thermosetting resin is preferably 5 to 60% by mass, more preferably 10 to 50% by mass, relative to the total mass of the adhesive layer, from the viewpoint of allowing the adhesive layer to exhibit the function as a thermosetting adhesive appropriately.

[0123] In the case where the adhesive layer contains a thermoplastic resin having a thermosetting functional group, as the thermoplastic resin, for example, a thermosetting functional group-containing acrylic resin can be used. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group as the most abundant structural unit in terms of mass ratio. As the hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group, for example, there can be mentioned the same as exemplified as the hydrocarbon group-containing (meth)acrylate optionally having an alkoxy group which can be contained in the above-mentioned adhesive layer.

[0124] On the other hand, as the thermosetting functional group in the thermosetting functional group-containing acrylic resin, for example, there can be mentioned: a glycidyl group, a carboxyl group, a hydroxyl group, an isocyanate group, and the like. Among them, a glycidyl group, a carboxyl group is preferred. That is, as the thermosetting functional group-containing acrylic resin, a glycidyl group-containing acrylic resin, a carboxyl group-containing acrylic resin is particularly preferred.

[0125] Further, it is preferable to contain a curing agent together with the acrylic resin containing a thermally curable functional group, and as the curing agent, for example, a curing agent exemplified as a crosslinking agent which can be contained in the above-mentioned radiation-curable adhesive for forming the adhesive layer can be listed. When the thermally curable functional group in the acrylic resin containing a thermally curable functional group is a glycidyl group, it is preferable to use a polyphenol compound as the curing agent, and for example, the above-mentioned various phenol aldehyde resins can be used.

[0126] For the adhesive layer before curing for die bonding, in order to achieve a certain degree of crosslinking degree, for example, it is preferable to previously blend a multifunctional compound capable of bonding by reacting with the functional group at the molecular chain end of the above-mentioned resin which can be contained in the adhesive layer, and the like, as a crosslinking component in the resin composition for forming the adhesive layer. This constitution is preferable from the viewpoint of improving the adhesion properties of the adhesive layer at high temperatures, and from the viewpoint of achieving improvement in heat resistance.

[0127] As the above-mentioned crosslinking component, for example, a polyisocyanate compound can be listed. As the polyisocyanate compound, for example, toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, an addition product of a polyol and a diisocyanate, and the like can be listed. Further, as the above-mentioned crosslinking component, other multifunctional compounds such as an epoxy resin can be used in combination with the polyisocyanate compound.

[0128] For the content of the crosslinking component in the resin composition for forming the adhesive layer, with respect to 100 parts by mass of the resin having the above-mentioned functional group capable of reacting with the crosslinking component and bonding, it is preferable to be 0.05 parts by mass or more from the viewpoint of improving the cohesion of the adhesive layer to be formed, and it is preferable to be 7 parts by mass or less from the viewpoint of improving the adhesion of the adhesive layer to be formed.

[0129] The adhesive layer preferably contains a filler. By blending a filler into the adhesive layer, it is possible to adjust the electrical conductivity, thermal conductivity, elastic modulus, and the like of the adhesive layer. As the filler, inorganic fillers and organic fillers can be listed, and inorganic fillers are particularly preferable.

[0130] As the inorganic filler, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silicon dioxide, amorphous silicon dioxide; and elemental metals such as aluminum, gold, silver, copper, nickel, and alloys; amorphous carbon black, graphite, and the like can be listed. The filler can have various shapes such as a spherical shape, a needle shape, a flaky shape, and the like. As the above-mentioned filler, one kind alone or two or more kinds can be used.

[0131] The average particle diameter of the above filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. When the average particle diameter is 0.005 μm or more, the wettability and adhesiveness to the adherend such as a semiconductor wafer are further improved. When the average particle diameter is 10 μm or less, the effects of the filler added for imparting the above properties can be sufficiently exerted, and heat resistance can be ensured. Note that the average particle diameter of the filler can be measured, for example, using a photometric particle size distribution meter (e.g., trade name "LA-910", manufactured by HORIBA, Ltd.).

[0132] The adhesive layer can contain other components as needed. As the above other components, for example, a curing catalyst, a flame retardant, a silane coupling agent, an ion trapping agent, a dye, and the like can be exemplified. The above other additives can be used singly or two or more kinds can be used.

[0133] As the above flame retardant, for example, antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like can be exemplified.

[0134] As the above silane coupling agent, for example, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and the like can be exemplified.

[0135] As the above ion trapping agent, for example, a hydrotalcite, bismuth hydroxide, hydrated antimony oxide (e.g., "IXE-300" manufactured by Toagosei Co., Ltd.), zirconium phosphate having a specific structure (e.g., "IXE-100" manufactured by Toagosei Co., Ltd.), magnesium silicate (e.g., "Kyoward 600" manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (e.g., "Kyoward 700" manufactured by Kyowa Chemical Industry Co., Ltd.), and the like can be exemplified.

[0136] A compound capable of forming a complex with a metal ion can also be used as the ion trapping agent. As such a compound, for example, a triazole compound, a tetrazole compound, a bipyridine compound can be exemplified. Among these, from the viewpoint of stability of the complex formed with a metal ion, a triazole compound is preferred.

[0137] As the above-mentioned triazole compounds, for example, 1,2,3-benzotriazole, 1-{N,N-bis(2- ethylhexyl)aminomethyl}benzotriazole, carboxybenzotriazole, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t-butylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3-t-butyl-5- methylphenyl)-5-chlorobenzotriazole, 2-(2-hydroxy-3,5-di-t-amylphenyl)benzotriazole, 2-(2- hydroxy-5-t-octylphenyl)benzotriazole, 6-(2-benzotriazyl)-4-t-octyl-6'-t-butyl-4'-methyl-2,2'- methylenebisphenol, 1-(2',3'-hydroxypropyl)benzotriazole, 1-(1,2-dicarboxydiethyl)benzotriazole, 1-(2-ethylhexylaminomethyl)benzotriazole, 2,4-di-t-amyl-6-{(H-benzotriazol-1-yl)methyl}phenol, 2-(2-hydroxy-5-t-butylphenyl)-2H-benzotriazole, 3-(2H-benzotriazol-2-yl)-5-(1,1- dimethylethyl)-4-hydroxy, 3-[3-t-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionic acid octyl ester, 3-[3-t-butyl-4-hydroxy-5-(5-chloro-2H-benzotriazol-2-yl)phenyl]propionic acid 2- ethylhexyl ester, 2-(2H-benzotriazol-2-yl)-6-(1-methyl-1-phenylethyl)-4-(1,1,3,3-tetramethylbutyl)phenol, 2-(2H-benzotriazol-2-yl)-4-t-butylphenol, 2-(2-hydroxy-5-methylphenyl)benzotriazole, 2-(2-hydroxy-5-t-octylphenyl)benzotriazole, 2-(3-t-butyl-2-hydroxy-5-methylphenyl)-5- chlorobenzotriazole, 2-(2-hydroxy-3,5-di-t-amylphenyl)benzotriazole, 2-(2-hydroxy-3,5-di-t- butylphenyl)-5-chlorobenzotriazole, 2-[2-hydroxy-3,5-bis(1,1-dimethylbenzyl)phenyl]-2H- benzotriazole, 2,2'-methylenebis[6-(2H-benzotriazol-2-yl)-4-(1,1,3,3-tetramethylbutyl)phenol], 2-[2-hydroxy-3,5-bis(alpha,alpha-dimethylbenzyl)phenyl]-2H-benzotriazole, 3-[3-(2H- benzotriazol-2-yl)-5-t-butyl-4-hydroxyphenyl]propionic acid methyl ester, and the like.

[0138] Further, as the ion capturing agent, a prescribed hydroxyl group-containing compound such as a hydroquinone compound, a hydroxyanthraquinone compound, a polyphenol compound, and the like can also be used. As such a hydroxyl group-containing compound, specifically, 1,2-hydroquinone, alizarin, 1,5-dihydroxyanthraquinone, tannic acid, gallic acid, methyl gallate, pyrogallol, and the like can be exemplified.

[0139] The thickness of the adhesive layer (total thickness in the case of a laminate) is not particularly limited and is, for example, 1 to 200 μm. The upper limit is preferably 100 μm, more preferably 80 μm. The lower limit is preferably 3 μm, more preferably 5 μm.

[0140] In the cutting chip bonding film 1, the peeling force between the above-mentioned adhesive layer and the above-mentioned adhesive layer in a T-type peeling test under conditions of a temperature of 23°C and a peeling speed of 300 mm / minute is preferably 0.3 N / 20 mm or more, more preferably 0.5 N / 20 mm or more, and further preferably 0.7 N / 20 mm or more. When the above-mentioned peeling force is 0.3 N / 20 mm or more, the adhesion between the adhesive layer and the adhesive layer is moderate, and when the expansion process is performed without radiation curing, peeling (floating) between the adhesive layer and the adhesive layer in the expansion process and the subsequent processes is easily suppressed. Furthermore, the above-mentioned peeling force is preferably higher, and the upper limit thereof is, for example, 10 N / 20 mm, 5.0 N / 20 mm, or 3.0 N / 20 mm. Note that, in the cutting chip bonding film of the second application, the above-mentioned peeling force of the adhesive layer before radiation curing (peeling force in a T-type peeling test before ultraviolet curing) is preferably the above-mentioned value.

[0141] In the cutting chip bonding film 1, the peeling force between the above-mentioned adhesive layer and the above-mentioned adhesive layer in a T-type peeling test under conditions of a temperature of 23°C and a peeling speed of 300 mm / minute after initial radiation curing (sometimes referred to as "peeling force in a T-type peeling test after ultraviolet curing (initial)") is preferably 0.3 N / 20 mm or less, more preferably 0.2 N / 20 mm or less. When the above-mentioned peeling force is 0.3 N / 20 mm or less, good picking is easily achieved in the picking process performed after radiation curing. Note that the above-mentioned peeling force of the adhesive layer of the cutting chip bonding film 1 after radiation curing after storage at 50°C for 1 week (sometimes referred to as "peeling force in a T-type peeling test after ultraviolet curing (elapsed time)") is preferably the above-mentioned value. Furthermore, the above-mentioned peeling force of the adhesive layer in the cutting chip bonding film of the second application (peeling force in a T-type peeling test after ultraviolet curing (elapsed time)) is preferably the above-mentioned value.

[0142] The T-type peeling test was performed using a tensile testing machine (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation). The test sample was prepared as follows. After a liner tape (trade name "BT-315", manufactured by Nitto Electric Industrial Co., Ltd.) was attached to the adhesive layer side of the cutting chip bonding film, a test sample having a size of 50 mm in width and 120 mm in length was cut out.

[0143] In the cutting chip bonding film of the present application, the peel strength increase rate calculated from the following formula is preferably 30% or less, more preferably 25% or less, and further preferably 20% or less. When the peel strength increase rate is 30% or less, good pickup of the semiconductor chip with the adhesive layer after dicing can be achieved even after a long time after manufacture.

[0144] Peel strength increase rate (%) = peel strength (with time) in the T-type peel test after ultraviolet curing (N / 20 mm) / peel strength (initial) in the T-type peel test after ultraviolet curing (N / 20 mm) x 100

[0145] The cutting chip bonding film can have a separation film. Specifically, it can be in a sheet-like form in which the separation film is provided to each cutting chip bonding film, or in a form in which the separation film is in a long strip shape, a plurality of cutting chip bonding films are provided on the separation film, and the separation film is wound into a roll.

[0146] The separation film is an element for protecting the surface of the adhesive layer of the cutting chip bonding film, and is peeled from the film when the cutting chip bonding film is used. As the separation film, for example, a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, a plastic film on which a surface is coated with a releasing agent such as a fluorine-based releasing agent or an acrylic long-chain alkyl ester-based releasing agent, paper, or the like can be listed. The thickness of the separation film is, for example, 5 to 200 μm.

[0147] The cutting chip bonding film 1 as one embodiment of the cutting chip bonding film of the present application can be manufactured, for example, as follows.

[0148] First, the base material 11 can be obtained by film formation using a publicly known or conventional film formation method. As the film formation method, for example, a calender film formation method, a casting method in an organic solvent, a blow extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, a dry lamination method, or the like can be listed.

[0149] Then, a composition (adhesive composition) for forming the adhesive layer 12, which contains an adhesive for forming the adhesive layer 12 and a solvent or the like, is applied to the base material 11 to form an applied film, and the applied film is cured as needed by desolventization, curing, or the like, whereby the adhesive layer 12 can be formed. As the method of application, for example, a publicly known or conventional application method such as roll coating, screen coating, gravure coating, or the like can be listed. Further, as the desolventization condition, for example, a temperature of 80 to 150°C and a time of 0.5 to 5 minutes are performed.

[0150] Further, the adhesive composition can be applied to the release film to form an applied film, and the applied film can be cured under the above-mentioned desolventizing conditions to form the adhesive layer 12. Thereafter, the adhesive layer 12 is attached to the substrate 11 together with the release film. By the above operation, the dicing tape 10 can be produced.

[0151] For the adhesive layer 20, first, a composition (adhesive composition) for forming the adhesive layer 20, which contains a resin, a filler, a curing catalyst, a solvent, and the like, is prepared. Then, the adhesive composition is applied to the release film to form an applied film, and the applied film is cured as necessary by desolventizing, curing, or the like, to form the adhesive layer 20. As the application method, there is no particular limitation, and for example, a publicly known or conventional application method such as roll coating, screen coating, gravure coating, or the like can be exemplified. Further, as the desolventizing conditions, for example, desolventizing is performed at a temperature of 70 to 160°C for 1 to 5 minutes.

[0152] Next, the release film is peeled from the dicing tape 10 and the adhesive layer 20, and the two are attached with the adhesive layer 20 and the adhesive layer 12 as the attachment surfaces. The attachment can be performed by, for example, press bonding. At this time, the lamination temperature is not particularly limited, and for example, it is preferably 30 to 50°C, and more preferably 35 to 45°C. Further, the line pressure is not particularly limited, and for example, it is preferably 0.1 to 20 kgf / cm, and more preferably 1 to 10 kgf / cm.

[0153] By the above operation, for example, the dicing die bonding film 1 shown in FIG. 1 can be produced. Figure 1 As described above, the dicing die bonding film 1 can be produced by the above-mentioned operation.

[0154] Note that one embodiment of the dicing die bonding film of the present application can be produced, for example, by the following method. For the dicing die bonding film 1 produced by the above-mentioned operation, the adhesive layer 12 is irradiated with a radiation ray from, for example, the substrate 11 side, and the adhesive layer is cured, whereby the dicing die bonding film is produced. The irradiation amount is, for example, 50 to 500 mJ, and preferably 100 to 300 mJ. The region to be irradiated with the radiation ray (irradiation region R) in the dicing die bonding film is generally a region in the adhesive layer 12 other than the edge portion in the adhesive layer 20 attachment region. In the case where the irradiation region R is provided locally, the irradiation can be performed through a photomask on which a pattern corresponding to a region other than the irradiation region R is formed. Further, a method in which the irradiation region R is formed by point irradiation of the radiation ray can be exemplified.

[0155] [Method for manufacturing semiconductor device]

[0156] Semiconductor devices can be manufactured using the chip-die bonding film of the present invention. Specifically, a semiconductor device can be manufactured by a manufacturing method comprising the following steps: a step of attaching a segment of a semiconductor wafer containing multiple semiconductor chips, or a semiconductor wafer capable of being monolithically divided into multiple semiconductor chips, to the adhesive layer side of the chip-die bonding film of the present invention (sometimes referred to as "step A"); a step of extending the dicing strip in the chip-die bonding film of the present invention under relatively low temperature conditions to at least cut the adhesive layer, thereby obtaining semiconductor chips with adhesive layers (sometimes referred to as "step B"); a step of extending the dicing strip under relatively high temperature conditions to widen the spacing between the semiconductor chips with adhesive layers (sometimes referred to as "step C"); and a step of picking up the semiconductor chips with adhesive layers (sometimes referred to as "step D"). It should be noted that... Figures 2-11 The steps in a method for manufacturing a semiconductor device using a die-cutting bonding film 1 are shown, but the die-cutting bonding film 1 of the first invention can be replaced by the die-cutting bonding film of the second invention.

[0157] The semiconductor wafer diced containing multiple semiconductor chips, or the semiconductor wafer capable of being monolithically divided into multiple semiconductor chips, used in process A, can be obtained as follows. First, as... Figure 2 (a) and Figure 2 As shown in (b), a dicing groove 30a is formed on the semiconductor wafer W (dicing groove formation process). The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor components (not shown) have been mounted on the first surface Wa side of the semiconductor wafer W, and the wiring structure required for the semiconductor components (not shown) has also been formed on the first surface Wa.

[0158] Then, after attaching the wafer processing tape T1 with the adhesive surface T1a to the second surface Wb side of the semiconductor wafer W, and holding the semiconductor wafer W on the wafer processing tape T1, a dicing groove 30a of a predetermined depth is formed on the first surface Wa side of the semiconductor wafer W using a rotating cutting tool such as a dicing device. The dicing groove 30a is a gap for separating the semiconductor wafer W into semiconductor chip units (in... Figures 2-4 In the diagram, the dividing groove 30a is schematically shown in thick lines.

[0159] Then, as Figure 2 As shown in (c), the wafer processing tape T2 with adhesive surface T2a is applied to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T1 is peeled off from the semiconductor wafer W.

[0160] Then, as Figure 2(d) to keep the semiconductor wafer W in a state of being held on the wafer processing tape T2, the semiconductor wafer W is thinned to a prescribed thickness by grinding processing from the second surface Wb (wafer thinning step). The grinding processing can be performed using a grinding processing device having a grinding stone. By this wafer thinning step, in the present embodiment, a semiconductor wafer 30A capable of being singulated into a plurality of semiconductor chips 31 can be formed.

[0161] With respect to the semiconductor wafer 30A, specifically, in the wafer, there is a portion (connection portion) in which portions to be singulated into a plurality of semiconductor chips 31 on the second surface Wb side are connected. The thickness of the connection portion in the semiconductor wafer 30A, that is, the distance between the second surface Wb of the semiconductor wafer 30A and the front end on the second surface Wb side of the division groove 30a is, for example, 1 to 30 μm, and preferably 3 to 20 μm.

[0162] (Step A)

[0163] In Step A, a division piece of a semiconductor wafer including a plurality of semiconductor chips, or a semiconductor wafer capable of being singulated into a plurality of semiconductor chips is attached to the adhesive layer 20 side in the dicing die bond film 1.

[0164] In one embodiment of Step A, as shown in (a) of Figure 3 , the semiconductor wafer 30A held on the wafer processing tape T2 is attached to the adhesive layer 20 of the dicing die bond film 1. Then, as shown in (b) of Figure 3 , the wafer processing tape T2 is peeled from the semiconductor wafer 30A.

[0165] Note that after the semiconductor wafer 30A is attached to the adhesive layer 20, the adhesive layer 12 can be irradiated with a radiation ray such as ultraviolet rays from the substrate 11 side. The irradiation amount is, for example, 50 to 500 mJ / cm 2 , and preferably 100 to 300 mJ / cm 2 . The region (irradiation region R shown in (c) of Figure 1 ) in the dicing die bond film 1 in which irradiation as a measure to reduce the adhesion of the adhesive layer 12 is to be performed is, for example, a region in the adhesive layer 12 other than the edge portion in the region to which the adhesive layer 20 is attached.

[0166] (Step B)

[0167] In Step B, the dicing tape 10 in the dicing die bond film 1 is extended under a relatively low temperature condition, and at least the adhesive layer 20 is cut, to obtain a semiconductor chip with an adhesive layer.

[0168] In one embodiment of Step B, first, the annular frame 41 is attached to the adhesive layer 12 of the dicing tape 10 in the dicing die bond film 1, and then, as shown in (a) ofFigure 4 (a) shown in the drawing fixes the dicing die attach film 1 with the semiconductor wafer 30A to the holding tool 42 of the expansion device.

[0169] Then, as shown in (b) of the drawing, a first expansion process (cold expansion process) under a relatively low temperature condition is performed to singulate the semiconductor wafer 30A into a plurality of semiconductor chips 31, and to cut the adhesive layer 20 of the dicing die attach film 1 into small pieces of the adhesive layer 21, thereby obtaining the semiconductor chips 31 with the adhesive layer. Figure 4

[0170] In the cold expansion process, the top-up member 43 of a hollow cylindrical shape provided in the expansion device is brought into abutment against the dicing tape 10 on the lower side in the drawing of the dicing die attach film 1 and is raised to expand the dicing tape 10 to which the semiconductor wafer 30A is attached in a manner to stretch the dicing tape 10 in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer 30A.

[0171] The expansion is performed in a condition to generate a tensile stress in the range of 15 to 32 MPa, preferably 20 to 32 MPa, in the dicing tape 10. The temperature condition in the cold expansion process is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C. The expansion speed (the speed of raising the top-up member 43) in the cold expansion process is preferably 0.1 to 400 mm / sec, more preferably 0.3 to 300 mm / sec. Further, the expansion amount in the cold expansion process is preferably 1 to 20 mm, more preferably 2 to 16 mm.

[0172] In the process B, when the semiconductor wafer 30A capable of being singulated into a plurality of semiconductor chips is used, the cutting occurs at a thinner and more easily broken portion in the semiconductor wafer 30A, thereby singulating into the semiconductor chips 31. At the same time, in the process B, the adhesive layer 20 in close contact with the adhesive layer 12 of the dicing tape 10 being expanded is inhibited from deforming in the regions in close contact with each of the semiconductor chips 31, whereas such deformation inhibition does not occur at positions along the vertical direction in the drawing where the division grooves between the semiconductor chips 31 are present, and the tensile stress generated in the dicing tape 10 acts in this state. As a result, the adhesive layer 20 is cut at positions along the vertical direction in the drawing where the division grooves between the semiconductor chips 31 are present. After the cutting by the expansion, as shown in (c) of the drawing, the top-up member 43 is lowered to release the expanded state of the dicing tape 10. Figure 4

[0173] (Process C)

[0174] In the process C, the above-described dicing tape 10 is expanded under a relatively high temperature condition to widen the intervals between the above-described semiconductor chips with the adhesive layer. ​​

[0175] In one embodiment of the process C, first, a second expansion process (normal temperature expansion process) under a relatively high temperature condition is performed as shown in (a) of Figure 5 The distance (interval distance) between the semiconductor chips 31 with the adhesive layer is widened.

[0176] In the process C, the lifting member 43 of the hollow cylindrical shape provided in the expansion device is lifted again, and the dicing tape 10 of the dicing die bond film 1 is expanded. The temperature condition in the second expansion process is, for example, 10°C or higher, and preferably 15 to 30°C. The expansion speed (speed of lifting the lifting member 43) in the second expansion process is, for example, 0.1 to 10 mm / sec, and preferably 0.3 to 1 mm / sec. In addition, the expansion amount in the second expansion process is, for example, 3 to 16 mm. In the process C, the interval distance of the semiconductor chips 31 with the adhesive layer is widened to a degree that the semiconductor chips 31 with the adhesive layer can be suitably picked up from the dicing tape 10 by the pickup process described later. After the interval distance is widened by the expansion, the lifting member 43 is lowered as shown in (b) of Figure 5 , and the expanded state of the dicing tape 10 is released.

[0177] From the viewpoint of suppressing the narrowing of the interval distance of the semiconductor chips 31 with the adhesive layer on the dicing tape 10 after the expanded state is released, it is preferable to heat and shrink the outer portion of the semiconductor chip 31 holding region in the dicing tape 10 before the expanded state is released.

[0178] After the process C, a cleaning process can be provided as needed, which cleans the semiconductor chip 31 side in the dicing tape 10 with the semiconductor chips 31 with the adhesive layer using a cleaning liquid such as water.

[0179] (Process D)

[0180] In the process D (pickup process), the singulated semiconductor chips with the adhesive layer are picked up. In one embodiment of the process D, after the cleaning process described above is performed as needed, the semiconductor chips 31 with the adhesive layer are picked up from the dicing tape 10 as shown in (a) of Figure 6 . For example, for the semiconductor chips 31 with the adhesive layer as the pickup target, the needle-shaped member 44 of the pickup mechanism is lifted on the lower side in the drawing of the dicing tape 10 to lift the semiconductor chips 31 with the adhesive layer through the dicing tape 10, and the semiconductor chips 31 with the adhesive layer are held by suction by the suction gripper 45. In the pickup process, the lifting speed of the needle-shaped member 44 is, for example, 1 to 100 mm / sec, and the lifting amount of the needle-shaped member 44 is, for example, 50 to 3000 μm.

[0181] The above-described method of manufacturing a semiconductor device can further include other processes other than the processes A to D. For example, in one embodiment, as shown in (a) of Figure 7As shown in (a), the picked-up semiconductor chip 31 with adhesive layer is temporarily fixed to the object 51 through adhesive layer 21 (temporary fixing process).

[0182] Examples of substrates 51 include lead frames, TAB (Tape Automated Bonding) films, wiring substrates, and separately fabricated semiconductor chips. When temporarily fixed, the shear bond strength of the adhesive layer 21 at 25°C relative to the substrate 51 is preferably 0.2 MPa or more, more preferably 0.2 to 10 MPa. This shear bond strength of the adhesive layer 21 of 0.2 MPa or more can suppress shear deformation at the bonding surface between the adhesive layer 21 and the semiconductor chip 31 or the substrate 51 due to ultrasonic vibration or heating during the wire bonding process described later, thereby ensuring suitable wire bonding. Furthermore, when temporarily fixed, the shear bond strength of the adhesive layer 21 at 175°C relative to the substrate 51 is preferably 0.01 MPa or more, more preferably 0.01 to 5 MPa.

[0183] Then, as Figure 7 As shown in (b), the electrode plates (not shown) of the semiconductor chip 31 are electrically connected to the terminal portion (not shown) of the substrate 51 by means of bonding wire 52 (wire bonding process).

[0184] The connection between the electrode plates of the semiconductor chip 31, the terminal portion of the adherend 51, and the bonding wire 52 can be achieved by ultrasonic welding accompanied by heating, in a manner that prevents the adhesive layer 21 from thermally curing. For example, gold wire, aluminum wire, or copper wire can be used as the bonding wire 52. The wire heating temperature during wire bonding is, for example, 80–250°C, preferably 80–220°C. Furthermore, the heating time is from several seconds to several minutes.

[0185] Then, as Figure 7 As shown in (c), the semiconductor chip 31 is encapsulated by encapsulating resin 53 for protecting the semiconductor chip 31 and bonding leads 52 on the adherend 51 (encapsulation process).

[0186] In the encapsulation process, the adhesive layer 21 is thermo-cured. In the encapsulation process, the encapsulating resin 53 is formed, for example, using a transfer molding technique employing a mold. As a constituent material of the encapsulating resin 53, an epoxy resin, for example, can be used. In the encapsulation process, the heating temperature for forming the encapsulating resin 53 is, for example, 165–185°C, and the heating time is, for example, 60 seconds to several minutes.

[0187] If the encapsulating resin 53 is not fully cured during the encapsulation process, a post-curing process is performed after the encapsulation process to ensure complete curing of the encapsulating resin 53. Even if the adhesive layer 21 is not fully heat-cured during the encapsulation process, it can be fully heat-cured together with the encapsulating resin 53 during the post-curing process. In the post-curing process, the heating temperature is, for example, 165–185°C, and the heating time is, for example, 0.5–8 hours.

[0188] In the above embodiment, as described above, after temporarily fixing the semiconductor chip 31 with the adhesive layer to the substrate 51, the wire bonding process is performed without completely thermally curing the adhesive layer 21. Alternatively, in the above semiconductor device manufacturing method, after temporarily fixing the semiconductor chip 31 with the adhesive layer to the substrate 51, the adhesive layer 21 is thermally cured, and then the wire bonding process is performed.

[0189] In the above-described method for manufacturing a semiconductor device, as another embodiment, the following can be performed: Figure 8 The wafer thinning process shown is used instead of the reference process. Figure 2 The wafer thinning process described in (d) above. After referring to Figure 2 After the above process of (c), in Figure 8 In the wafer thinning process shown, the semiconductor wafer W is held on the wafer processing tape T2 and thinned to a specified thickness by grinding from the second surface Wb, forming a semiconductor wafer segment 30B containing a plurality of semiconductor chips 31 and held on the wafer processing tape T2.

[0190] In the aforementioned wafer thinning process, either the method of grinding the wafer until the dicing groove 30a is exposed on the second surface Wb (Method 1) can be used, or the following method can be used: grinding the wafer from the second surface Wb until reaching the dicing groove 30a, and then using the squeezing force of a rotating grinding wheel to create a crack between the dicing groove 30a and the second surface Wb, thereby forming a semiconductor wafer dicing body 30B (Method 2). The reference should be appropriately determined according to the method used. Figure 2 (a) and Figure 2 (b) The depth of the dividing groove 30a formed above from the first surface Wa.

[0191] exist Figure 8 The diagram schematically illustrates the dicing groove 30a obtained by the first method or the dicing groove 30a obtained by the second method, along with the associated crack, using thick lines. In the aforementioned method for manufacturing a semiconductor device, a semiconductor wafer dicing body 30B thus manufactured can be used in step A instead of the semiconductor wafer 30A, and this is used for reference. Figures 3-7 The above-mentioned processes.

[0192] Figure 9 (a) and Figure 9 (b) of FIG. 1 show the process B in this embodiment, i.e., the first expanding process (cold expanding process) performed after the semiconductor wafer divided body 30B is attached to the dicing die bonding film 1.

[0193] In the process B in this embodiment, the hollow cylindrical top-up member 43 provided in the expanding device is brought into abutment with the dicing tape 10 on the lower side in the figure of the dicing die bonding film 1 and is raised to expand the dicing tape 10 to which the semiconductor wafer divided body 30B is attached in a manner to stretch the dicing tape 10 in two-dimensional directions including the radial direction and the circumferential direction of the semiconductor wafer divided body 30B.

[0194] The expansion is performed under conditions to generate a tensile stress in the range of, for example, 5 to 28 MPa, preferably 8 to 25 MPa, in the dicing tape 10. The temperature condition in the cold expanding process is, for example, 0°C or lower, preferably -20 to -5°C, more preferably -15 to -5°C. The expansion speed (the speed of raising the top-up member 43) in the cold expanding process is preferably 0.1 to 400 mm / sec, more preferably 0.3 to 300 mm / sec. Further, the expansion amount in the cold expanding process is preferably 1 to 20 mm, more preferably 2 to 16 mm.

[0195] By such a cold expanding process, the adhesive layer 20 of the dicing die bonding film 1 is cut into small pieces of the adhesive layer 21, and the semiconductor die 31 with the adhesive layer is obtained. Specifically, in the cold expanding process, in the adhesive layer 20 which is in close contact with the adhesive layer 12 of the dicing tape 10 being expanded, the deformation is suppressed in each region where each semiconductor die 31 of the semiconductor wafer divided body 30B is in close contact, while on the other hand, such deformation suppression does not occur at positions in the figure in the vertical direction along the dicing groove 30a between the semiconductor dies 31, and the tensile stress generated in the dicing tape 10 acts in this state. As a result, the positions in the figure in the vertical direction along the dicing groove 30a between the semiconductor dies 31 in the adhesive layer 20 are cut.

[0196] In the above-described method for manufacturing a semiconductor device, as still another other embodiment, a semiconductor wafer 30C produced as follows can be used instead of the semiconductor wafer 30A or the semiconductor wafer divided body 30B used in the process A.

[0197] In this embodiment, as shown in (a) and (b) of FIG. 1, Figure 10 (a) and Figure 10As shown in (b), a modified region 30b is first formed in a semiconductor wafer W. The semiconductor wafer W has a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been mounted on the first surface Wa of the semiconductor wafer W, and the wiring structure required for the semiconductor elements (not shown) has also been formed on the first surface Wa.

[0198] Then, the wafer processing tape T3 with the adhesive surface T3a is attached to the first surface Wa side of the semiconductor wafer W, so that the semiconductor wafer W is held on the wafer processing tape T3. A laser with a focal point located inside the wafer is irradiated onto the semiconductor wafer W along the pre-division line from the side opposite to the wafer processing tape T3. The ablation caused by multiphoton absorption forms a modified region 30b within the semiconductor wafer W. The modified region 30b is a fragile region used to separate the semiconductor wafer W into semiconductor chip units.

[0199] A method for forming a modified region 30b in a semiconductor wafer by irradiating a pre-divided line with a laser is described in detail in, for example, Japanese Patent Application Publication No. 2002-192370. The laser irradiation conditions in this embodiment can be appropriately adjusted within the range of, for example, the following conditions.

[0200] <Laser Irradiation Conditions>

[0201] (A) Laser

[0202]

[0203] (B) Concentrating lens

[0204] Ratio below 100x

[0205] NA 0.55

[0206] Transmittance to laser wavelength below 100%

[0207] (C) The moving speed of the stage on which the semiconductor substrate is placed is less than 280 mm / s.

[0208] Then, as Figure 10 As shown in (c), with the semiconductor wafer W held on the wafer processing tape T3, the semiconductor wafer W is thinned to a specified thickness by grinding from the second surface Wb, thereby forming a semiconductor wafer 30C (wafer thinning process) that can be monolithically divided into multiple semiconductor chips 31.

[0209] In the above-described semiconductor device manufacturing method, semiconductor wafer 30C, fabricated as described above, can be used in step A to replace semiconductor wafer 30A as a monolithically achievable semiconductor wafer, and this can be used as a reference. Figures 3-7 The above-mentioned processes.

[0210] Figure 11 (a) and Figure 11 (b) shows step B in this embodiment, namely the first expansion step (cold expansion step) performed after the semiconductor wafer 30C is bonded to the diced chip bonding film 1.

[0211] In the cold expansion process, the hollow cylindrical lifting member 43 of the expansion device abuts against the cutting strip 10 on the lower side of the chip bonding film 1 and rises, so as to stretch the cutting strip 10 of the chip bonding film 1 to which the semiconductor wafer 30C is attached in a two-dimensional direction along the radial and circumferential directions.

[0212] The expansion is performed under conditions that generate tensile stress in the cutting strip 10, for example, within the range of 5 to 28 MPa, preferably 8 to 25 MPa. The temperature conditions in the cold expansion process are, for example, below 0°C, preferably -20 to -5°C, more preferably -15 to -5°C. The expansion speed (the speed at which the lifting member 43 rises) in the cold expansion process is preferably 0.1 to 400 mm / s, more preferably 0.3 to 300 mm / s. Furthermore, the expansion amount in the cold expansion process is preferably 1 to 20 mm, more preferably 2 to 16 mm.

[0213] Through this cold-expansion process, the adhesive layer 20 of the die bonding film 1 is cut into small pieces of adhesive layer 21, resulting in a semiconductor chip 31 with an adhesive layer. Specifically, in the cold-expansion process, a crack is formed in the fragile modified region 30b of the semiconductor wafer 30C, monolithically forming the semiconductor chip 31. Simultaneously, in the cold-expansion process, deformation is suppressed in the regions of the adhesive layer 20 that adheres to the adhesive layer 12 of the expanded dicing strip 10, where each semiconductor chip 31 of the semiconductor wafer 30C is bonded. However, this deformation suppression effect does not occur at locations perpendicular to the crack formation position in the diagram, where the tensile stress generated in the dicing strip 10 takes effect. As a result, the adhesive layer 20 is cut at locations perpendicular to the crack formation position in the diagram between the semiconductor chips 31.

[0214] Furthermore, in the above-described method for manufacturing a semiconductor device, the die bonding film 1, as described above, can be used to obtain a semiconductor chip with an adhesive layer, but it can also be used to obtain a semiconductor chip with an adhesive layer when multiple semiconductor chips are stacked and 3D mounted. In this 3D mounted semiconductor chip 31, spacers may or may not be sandwiched between the semiconductor chips 31 along with the adhesive layer 21.

[0215] Example

[0216] The present application is explained in more detail by the following examples, but the present application is not limited by any of these examples. Note that the composition of each monomer component constituting the acrylic polymer P2 of the adhesive layer in the examples and comparative examples is shown in Table 1. In Table 1, the unit of each numerical value indicating the composition of the composition is "moles" in the case of the numerical value of the monomer component and "mass parts" in the case of the numerical value of each component other than the monomer component, with respect to 100 mass parts of the acrylic polymer P2.

[0217] Example 1

[0218] (cutting tape)

[0219] A mixture containing 100 moles of 2-ethylhexyl acrylate (2EHA), 20 moles of 2-hydroxyethyl acrylate (HEA), 0.2 mass parts of benzoyl peroxide as a polymerization initiator with respect to 100 mass parts of the total amount of these monomer components, and toluene as a polymerization solvent was stirred at 61°C under a nitrogen atmosphere for 6 hours (polymerization reaction) in a reaction vessel equipped with a condenser tube, a nitrogen gas introduction tube, a thermometer, and a stirring device. Thus, a polymer solution containing an acrylic polymer P1 was obtained.

[0220] Then, a mixture containing the polymer solution containing the acrylic polymer P1, 2-methacryloyloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was stirred at 50°C under an air atmosphere for 48 hours (addition reaction). In the reaction solution, the compounding amount of MOI was 16 moles. Furthermore, in the reaction solution, the compounding amount of dibutyltin dilaurate was 0.01 mass parts with respect to 100 mass parts of the acrylic polymer P1. By the addition reaction, a polymer solution containing an acrylic polymer P2 having a methacrylate group in a side chain (an acrylic polymer containing a structural unit derived from an isocyanate compound containing an unsaturated functional group) was obtained.

[0221] Then, in the polymer solution, 0.75 mass parts of a polyisocyanate compound (trade name "Coronate L", manufactured by Nippon Polyurethane Industry Co., Ltd.) and 2 mass parts of a photopolymerization initiator (trade name "IRGACURE 127", manufactured by BASF Corporation) were added with respect to 100 mass parts of the acrylic polymer P2, mixed, and diluted with toluene so that the viscosity of the mixture at room temperature was 500 mPa s, and an adhesive composition was obtained.

[0222] Next, the adhesive composition was applied to the silicone release-treated surface of the PET separator film (thickness 50 μm) having the silicone release-treated surface using an applicator to form an adhesive composition layer. Then, the composition layer was subjected to desolventization based on heating at 120°C for 2 minutes to form an adhesive layer having a thickness of 10 μm on the PET separator film.

[0223] Then, using a laminator, an EVA resin film (thickness 125 μm, manufactured by Nitto Electric Industrial Co., Ltd.) was attached to the exposed surface of the adhesive layer as a base material at room temperature. With respect to the attached body, storage was performed at 50°C for 24 hours thereafter. The cutting tape of Example 1 was produced by performing the above operations.

[0224] (Adhesive layer)

[0225] An acrylic polymer Al (trade name "TEISAN RESIN SG-P3", manufactured by Nagase Chemtex Corporation) 100 parts by mass, a solid phenol-aldehyde resin (trade name "MEHC-7851SS", solid at 23°C, manufactured by Meiwa-Kensei Co., Ltd.) 12 parts by mass, and a silica filler (trade name "SO-C2", average particle diameter 0.5 μm, manufactured by Admatex Co., Ltd.) 100 parts by mass were added to methyl ethyl ketone, mixed, and the concentration was adjusted so as to be 18% by mass of solid content to obtain an adhesive composition.

[0226] Then, the adhesive composition was applied to the silicone release-treated surface of the PET separator film (thickness 50 μm) having the silicone release-treated surface using an applicator to form a coating film, and the coating film was subjected to desolventization at 130°C for 2 minutes. The adhesive layer having a thickness of 15 μm in Example 1 was produced on the PET separator film by performing the above operations.

[0227] (Cutting chip bonding film production)

[0228] The PET-based separator film was peeled from the cutting tape of Example 1, and the adhesive layer of Example 1 was attached to the exposed adhesive layer. The attachment was performed using a hand roller. The cutting chip bonding film of Example 1 was produced thereby.

[0229] Examples 2 to 33 and Comparative Examples 1 to 4

[0230] In the production of the adhesive layer, the monomer composition for forming the acrylic polymer Pl, the compounding amount of MOI, the kind or compounding amount of photopolymerization initiator, the kind or compounding amount of polyisocyanate compound, and the like were changed as shown in Tables 1 to 3, and otherwise, the same operations as in Example 1 were performed to produce the cutting tape and the cutting chip bonding film.

[0231] Note that in Tables 1 to 3, "EA" represents ethyl acrylate, "BA" represents butyl acrylate, "LMA" represents lauryl methacrylate, "2MEA" represents 2-methoxyethyl acrylate, "4HBA" represents 4-hydroxybutyl acrylate, "HEMA" represents 2-hydroxyethyl methacrylate, "AM" represents acryloylmorpholine, "IRGACURE 2959" represents the trade name "IRGACURE 2959" (manufactured by BASF Corporation), "IRGACURE 651" represents the trade name "IRGACURE 651" (manufactured by BASF Corporation), "IRGACURE 369" represents the trade name "IRGACURE 369" (manufactured by BASF Corporation), and "Coronate HL" represents the trade name "Coronate HL" (manufactured by DKS Co., Ltd.).

[0232] <Evaluation>

[0233] For the cut chip bonding films obtained in the examples and comparative examples, the following evaluations were performed. The results are shown in the tables.

[0234] (Pick-up suitability)

[0235] As the laser processing apparatus, the trade name "ML300-Integration" (Tokyo Electron Ltd.) was used, the focal point was positioned inside a 12-inch semiconductor wafer, and laser light was irradiated along a lattice-shaped (10 mm x 10 mm) pre-separation line to form a modified region inside the semiconductor wafer. The irradiation of the laser light was performed under the following conditions.

[0236] (A) Laser

[0237]

[0238]

[0239] (B) Focusing lens

[0240] Magnification 50x

[0241] NA 0.55

[0242] Transmittance for laser wavelength 60%

[0243] (C) Moving speed of stage on which semiconductor substrate is placed 100 mm / sec

[0244] For the method of forming a modified region 30b on a pre-separation line on a semiconductor wafer by laser irradiation, detailed description is given in, for example, Japanese Patent Application Publication No. 2002-192370, and the laser irradiation conditions in this embodiment are suitably adjusted within the range of, for example, the following conditions.

[0245] < Laser irradiation conditions >

[0246] (A) Laser

[0247]

[0248] (B) Concentrating lens

[0249] Magnification 100x or less

[0250] NA 0.55

[0251] Transmittance to laser wavelength 100% or less

[0252] (C) Moving speed of stage on which semiconductor substrate is placed 280 mm / sec or less

[0253] After the modified region was formed inside the semiconductor wafer, a protective tape for backgrinding was attached to the surface of the semiconductor wafer, and a backgrinding machine (trade name "DGP8760", manufactured by DISCO Corporation) was used to grind the back surface in such a manner that the thickness of the semiconductor wafer became 30 μm.

[0254] The semiconductor wafer on which the modified region was formed and the dicing ring were attached to the dicing die-bonding film obtained in the examples and comparative examples. Then, a die separation device (trade name "DDS2300", manufactured by DISCO Corporation) was used to cut the semiconductor wafer and the adhesive layer. Specifically, first, the semiconductor wafer was cut by cold expansion using a cold expansion unit at a temperature of -15°C, a speed (expansion speed) of 200 mm / sec at the time of cold expansion, and an expansion amount of 14 mm. Then, the area of the portion of the adhesive layer that floated from the dicing tape (the proportion of the area of the semiconductor chip with the adhesive layer that floated when the entire area of the adhesive layer was taken as 100%) was observed using a microscope. After the cold expansion, it was confirmed that the cutting and the floating of the semiconductor chip with the die-bonding film were not problematic.

[0255] After the cutting of the semiconductor wafer and the adhesive layer, normal-temperature expansion was performed using the cold expansion unit described above at room temperature, an expansion speed of 1 mm / sec, and an expansion amount of 5 mm. Then, using a product with the trade name "Die Bonder SPA-300" (manufactured by Shinkawa Co., Ltd.), a pickup of 50 semiconductor chips with the die-bonding film was attempted at a lift speed of 1 mm / sec, a lift amount of 500 μm, and a number of needle-like members of 5. Then, a case in which all 50 could be picked up was evaluated as O, and a case in which even one of the 50 could not be picked up was evaluated as X. The evaluation results are shown in the table.

[0256] (Adhesion force in T-type peeling test before ultraviolet curing)

[0257] For each of the dicing die bonding films obtained in the examples and comparative examples, the adhesion force between the adhesive layer and the adhesive layer was investigated as follows. First, a test piece was prepared from each of the dicing die bonding films. Specifically, a liner tape (trade name "BT-315", manufactured by Nitto Electric Industrial Co., Ltd.) was attached to the adhesive layer side of the dicing die bonding film, and a test piece having a size of 50 mm in width and 120 mm in length was cut from the dicing die bonding film with the liner tape. Then, for the test piece, a T-type peeling test was performed using a tensile testing machine (trade name "Autograph AGS-J", manufactured by Shimadzu Corporation), and the adhesion force (N / 20 mm) was measured. In this measurement, the temperature condition was set to 23°C, and the peeling speed was set to 300 mm / min. The measurement results are shown in the table.

[0258] (Adhesion force in T-type peeling test after ultraviolet curing (initial))

[0259] For the dicing die bonding films obtained in the examples and comparative examples, ultraviolet rays were irradiated from the EVA substrate side to the adhesive layer. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the cumulative light amount of irradiation was set to 350 mJ / cm 2 . Then, using the dicing die bonding film subjected to ultraviolet irradiation, the adhesion force (N / 20 mm) was measured in the same manner as in the above "adhesion force in T-type peeling test before ultraviolet curing", except that the ultraviolet irradiation was performed. The measurement results are shown in the table.

[0260] (Adhesion force in T-type peeling test after ultraviolet curing (over time))

[0261] For the dicing die bonding films obtained in the examples and comparative examples, ultraviolet rays were irradiated from the EVA substrate side to the adhesive layer. In the ultraviolet irradiation, a high-pressure mercury lamp was used, and the cumulative light amount of irradiation was set to 350 mJ / cm 2 . Then, using the dicing die bonding film subjected to ultraviolet irradiation, the adhesion force (N / 20 mm) was measured in the same manner as in the above "adhesion force in T-type peeling test before ultraviolet curing", except that the ultraviolet irradiation was performed. The measurement results are shown in the table.

[0262] (Storage property)

[0263] The case where the adhesion force increase rate calculated by the following formula was 30% or less was evaluated as O, and the case where the adhesion force increase rate exceeded 30% was evaluated as X. The results are shown in Table 1.

[0264] Peeling force increase rate (%) = peeling force (with time) in T-type peeling test after ultraviolet curing (N / 20 mm) / peeling force (initial) in T-type peeling test after ultraviolet curing (N / 20 mm) x 100

[0265] [Table 1]

[0266]

[0267] [Table 2]

[0268]

[0269] [Table 3]

[0270]

[0271] With the dicing die bond films of Examples 1 to 33, even after storage at 50°C for 1 week, the peeling force after ultraviolet curing increased at a small rate relative to before storage. Thus, with the dicing die bond films of Examples 1 to 33, even after a long period of time after manufacture, good pickup of the semiconductor chips with the adhesive layer after dicing was achieved.

Claims

1. A dicing die bond film, comprising: a dicing tape having a layered structure including a base material and an adhesive layer; and an adhesive layer that is releasably bonded to the adhesive layer in the dicing tape, the adhesive layer including: a polymer having a structural portion derived from a crosslinking agent including a radically polymerizable functional group and a first functional group other than the radically polymerizable functional group, and maintaining a state of radical polymerizability of the radically polymerizable functional group; and a radical polymerization initiator having a second functional group capable of reacting with the first functional group, the polymer including a configuration including a structural unit derived from a monomer component having a third functional group capable of reacting with the first functional group, the structural unit derived from the monomer component and the structural portion derived from the crosslinking agent being bonded by chemical reaction of the first functional group and the third functional group, the polymer further including a structural unit derived from a monomer component including a morpholino group, and the radical polymerization initiator being 2-hydroxy-1-(4-(4-(2-hydroxy-2-methylpropionyl)benzyl)phenyl)-2-methylpropane-1-one and / or 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone.

2. A dicing die bond film, comprising: a dicing tape having a layered structure including a base material and an adhesive layer; and an adhesive layer that is releasably bonded to the adhesive layer in the dicing tape, the adhesive layer including a polymer having a structural portion derived from a crosslinking agent including a radically polymerizable functional group and a first functional group other than the radically polymerizable functional group, the radically polymerizable functional group in the structural portion derived from the crosslinking agent being polymerized by a radical polymerization initiator having a second functional group capable of reacting with the first functional group, the polymer including a configuration including a structural unit derived from a monomer component having a third functional group capable of reacting with the first functional group, the structural unit derived from the monomer component and the structural portion derived from the crosslinking agent being bonded by chemical reaction of the first functional group and the third functional group, the polymer further including a structural unit derived from a monomer component including a morpholino group, and the radical polymerization initiator being 2-hydroxy-1-(4-(4-(2-hydroxy-2-methylpropionyl)benzyl)phenyl)-2-methylpropane-1-one and / or 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone. The second functional group is a hydroxyl group. The first functional group is a functional group capable of reacting with a hydroxyl group. wherein The structural portion derived from the crosslinking agent including the radically polymerizable functional group and the first functional group other than the radically polymerizable functional group is a structural portion derived from a crosslinking agent including a (meth)acryloyl group and an isocyanate group. ​ ​ ​ ​ ​ ​ wherein, ​ ​ ​ 3. The dicing die bond film according to claim 1 or 2, wherein, ​ 4. The dicing die bond film according to claim 1 or 2, wherein, ​ 5. The dicing die bond film according to claim 1 or 2, wherein ​

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