System and method for dose control for pulse width modulation

Abstract

A substrate processing system for processing a substrate includes: a manifold and a plurality of syringe assemblies located in a processing chamber. Each of the plurality of syringe assemblies is in fluid communication with the manifold and includes a valve, the valve including an inlet and an outlet. A dose controller is configured to: communicate with the valve in each of the plurality of syringe assemblies; and adjust a pulse width supplied to the valve in each of the plurality of syringe assemblies based on at least one of a manufacturing difference between the valves in each of the plurality of syringe assemblies and a non-uniformity of the valves in each of the plurality of syringe assemblies, such that a desired dose is supplied from the valve in each of the plurality of syringe assemblies.

Description

[0001] Cross - Reference to Related Applications

[0002] This application claims the benefit of priority of U.S. Provisional Patent Application No. 62 / 590,815, filed on November 27, 2017, and U.S. Provisional Patent Application No. 62 / 563,129, filed on September 26, 2017. The entire disclosures of the above - mentioned applications are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to substrate processing systems, and more particularly to substrate processing systems having pulse - width - modulated dose control. Background Art

[0004] The background description provided here is for the purpose of generally presenting the background of the present disclosure. Within the scope of the description in this background art section and in aspects of the description that could not be determined as prior art at the time of filing the application, the work of the currently named inventors is neither expressly nor impliedly admitted to be prior art against the present disclosure.

[0005] Substrate processing systems can be used to process substrates, such as semiconductor wafers. Examples of substrate processing include etching, deposition, photoresist removal, and the like. During processing, the substrate is disposed on a substrate support, such as an electrostatic chuck, and one or more processing gases can be introduced into the processing chamber.

[0006] The one or more processing gases can be delivered to the processing chamber through a gas delivery system. In some systems, the gas delivery system includes a manifold that is connected to a showerhead located in the processing chamber through one or more conduits. Most gas delivery systems deliver gas over a period longer than 5 or 10 seconds. The time delays caused by mixing in the manifold, delivery through the conduits, and flow resistance of the showerhead make it difficult to quickly change the gas mixture or to vary the gas dose spatially or temporally. In addition, the gas mixture can react during its travel through the gas delivery system. Some processes, such as atomic layer etching (ALE), atomic layer deposition (ALD), etc., require different gas mixtures to be delivered to the processing chamber over very short periods, typically less than one second or a few seconds. Summary of the Invention

[0007] A substrate processing system for processing a substrate includes: a manifold and a plurality of syringe assemblies located in a processing chamber. Each of the plurality of syringe assemblies is in fluid communication with the manifold and includes a valve having an inlet and an outlet. A dose controller is configured to: communicate with the valves in each of the plurality of syringe assemblies; and adjust a pulse width supplied to the valves in each of the plurality of syringe assemblies based on at least one of a manufacturing difference between the valves in each of the plurality of syringe assemblies and a non-uniformity of the valves in each of the plurality of syringe assemblies, so that a desired dose is supplied from the valves in each of the plurality of syringe assemblies.

[0008] In other features, each of the plurality of syringe assemblies further includes a pressure sensor that senses a pressure at the valve in each of the plurality of syringe assemblies. The dose controller is configured to adjust a corresponding pulse width for each valve based on the corresponding sensed pressure. Each of the plurality of syringe assemblies further includes a temperature sensor that senses a gas temperature at the valve in each of the plurality of syringe assemblies. The dose controller is configured to adjust the corresponding pulse width for each valve based on the corresponding sensed gas temperature.

[0009] In other features, the dose controller is configured to change the pulse width based on the corresponding positions of the plurality of syringe assemblies relative to the substrate. The dose controller is configured to change the pulse width based on corresponding empirical data for the plurality of syringe assemblies. A pressure regulator regulates the pressure inside the manifold. The dose controller is configured to adjust the pulse width so that the valves provide substantially the same dose. The dose controller is configured to adjust the pulse width so that the valves provide different doses. Each of the plurality of syringe assemblies includes a restriction orifice. Each of the plurality of syringe assemblies further includes a bypass valve having an inlet connected to the inlet of the valve.

[0010] In other features, each of the plurality of syringe assemblies further includes a pressure sensor that senses a pressure at the corresponding valve in each of the plurality of syringe assemblies. The dose controller is configured to adjust the pulse width for the valve and the bypass valve based on the corresponding sensed pressure. Each of the plurality of syringe assemblies further includes a temperature sensor that senses a gas temperature at the corresponding valve in each of the plurality of syringe assemblies. The dose controller is configured to adjust the pulse width for the valve and the bypass valve based on the corresponding sensed gas temperature.

[0011] Among other features, the dose controller is configured to vary a corresponding pulse width based on a desired overlap of the valve with the bypass valve for each of the plurality of syringe assemblies. The dose controller is configured to vary the doses output by the plurality of syringe assemblies to provide spatial skew.

[0012] A substrate processing system for processing a substrate includes a manifold and a plurality of syringe assemblies located in a processing chamber. Each of the plurality of syringe assemblies is in fluid communication with the manifold and includes a valve having an inlet and an outlet. A dose controller is configured to communicate with the valve in each of the plurality of syringe assemblies, adjust a pulse width supplied to the valve in each of the plurality of syringe assemblies to provide spatial dosing, and compensate for at least one of upstream skew caused by a previous process and pre-compensate for downstream skew expected from a subsequent process.

[0013] Among other features, each of the plurality of syringe assemblies further includes a pressure sensor that senses pressure at the valve in each of the plurality of syringe assemblies. The dose controller is configured to adjust the pulse width based on the corresponding pressure. Each of the plurality of syringe assemblies further includes a temperature sensor that senses the gas temperature at the valve in each of the plurality of syringe assemblies. The dose controller is configured to adjust the pulse width based on the corresponding gas temperature.

[0014] Among other features, the dose controller is configured to vary the pulse width based on at least one of manufacturing differences between the valves in each of the plurality of syringe assemblies and non-uniformities of the valves in each of the plurality of syringe assemblies. A pressure regulator regulates the pressure inside the manifold. Each of the plurality of syringe assemblies further includes a restrictor orifice. Each of the plurality of syringe assemblies further includes a bypass valve having an inlet connected to the inlet of the valve. Each of the plurality of syringe assemblies further includes a pressure sensor that senses pressure at the valve in each of the plurality of syringe assemblies. The dose controller is configured to adjust the pulse widths of the valve and the bypass valve based on the corresponding pressure.

[0015] Among other features, each of the plurality of syringe assemblies further includes a temperature sensor that senses the gas temperature at the valve in each of the plurality of syringe assemblies. The dose controller is configured to adjust the pulse widths of the valve and the bypass valve based on the corresponding gas temperature. The dose controller is configured to vary the pulse width based on a desired overlap of the valve with the bypass valve for each of the plurality of syringe assemblies.

[0016] Among other features, the dose controller is configured to vary the doses output by the plurality of syringe assemblies to provide spatial skew.

[0017] A substrate processing system for processing a substrate includes N manifolds and Y sets of syringe assemblies, where Y and N are integers greater than one. Each of the Y sets of syringe assemblies includes N syringe assemblies located in a processing chamber. Each of the N syringe assemblies in each set of syringe assemblies is in fluid communication with one of the N manifolds, and includes a valve having an inlet and an outlet. A dose controller is configured to control the pulse width output to the Y sets of syringe assemblies to provide temporal dosing of the substrate.

[0018] Among other features, the temporal dosing includes: supplying a first gas mixture from a first one of the N manifolds using a first one of the Y sets of syringe assemblies, and simultaneously supplying a second gas mixture from a second one of the N manifolds using a second one of the Y sets of syringe assemblies.

[0019] Among other features, each of the N syringe assemblies further includes a pressure sensor that senses the pressure at the valve in each of the N syringe assemblies. The dose controller is configured to adjust the pulse width based on the corresponding sensed pressure. Each of the N syringe assemblies further includes a temperature sensor that senses the gas temperature at the valve in each of the N syringe assemblies. The dose controller is configured to adjust the pulse width based on the corresponding gas temperature.

[0020] Among other features, the dose controller is configured to vary the pulse width based on at least one of manufacturing differences between the valves in each of the N syringe assemblies and non-uniformities of the valves in each of the N syringe assemblies. A pressure regulator regulates the pressure inside the manifold.

[0021] Among other features, each of the N syringe assemblies further includes a restriction orifice. Each of the N syringe assemblies further includes a bypass valve having an inlet connected to the inlet of the valve. Each of the N syringe assemblies further includes a pressure sensor that senses the pressure at the valve in each of the N syringe assemblies. The dose controller is configured to adjust the pulse width of the valve and the bypass valve based on the corresponding pressure.

[0022] Among other features, each of the N syringe assemblies further includes a temperature sensor that senses the gas temperature at the valve in each of the N syringe assemblies. The dose controller is configured to adjust the pulse width of the valve and the bypass valve based on the corresponding gas temperature.

[0023] Among other features, the dose controller is configured to vary the pulse width for each of the N syringe assemblies based on a desired overlap of the valve and the bypass valve.

[0024] A substrate processing system for processing a substrate includes: a manifold for supplying a main gas flow; and a plurality of syringe assemblies located within a processing chamber. Each of the plurality of syringe assemblies is in fluid communication with the manifold and includes a valve having an inlet and an outlet. A dose controller is configured to: define R groups, each group including at least one of the plurality of syringe assemblies, where R is an integer greater than one; communicate with the valves in each of the R groups; and divert the main gas flow into R gas flows corresponding to R predetermined flow ratios of the main gas flow by separately adjusting the pulse widths output to the valves associated with the R groups. At least one of the R predetermined flow ratios is different from another of the R predetermined flow ratios.

[0025] Among other features, each of the plurality of syringe assemblies further includes a pressure sensor that senses the pressure at the valve in each of the plurality of syringe assemblies. The dose controller is configured to adjust the pulse width based on the corresponding pressure. Each of the plurality of syringe assemblies further includes a temperature sensor that senses the gas temperature at the valve in each of the plurality of syringe assemblies. The dose controller is configured to adjust the pulse width based on the corresponding gas temperature.

[0026] Among other features, the dose controller is configured to vary the pulse width based on at least one of manufacturing differences between the valves in each of the plurality of syringe assemblies and non-uniformities of the valves in each of the plurality of syringe assemblies. A pressure regulator regulates the pressure inside the manifold.

[0027] Among other features, each of the plurality of syringe assemblies further includes a restriction orifice. Each of the plurality of syringe assemblies further includes a bypass valve having an inlet connected to the inlet of the valve. Each of the plurality of syringe assemblies further includes a pressure sensor that senses the pressure at the valve in each of the plurality of syringe assemblies. The dose controller is configured to adjust the pulse widths of the valve and the bypass valve based on the corresponding pressure.

[0028] Among other features, each of the plurality of syringe assemblies further includes a temperature sensor that senses the gas temperature at the valve in each of the plurality of syringe assemblies. The dose controller is configured to adjust the pulse widths of the valve and the bypass valve based on the corresponding gas temperature.

[0029] Among other features, the dose controller is configured to vary the pulse width for each of the plurality of syringe assemblies based on a desired overlap of the valve with the bypass valve. The dose controller is configured to vary the dose output by the plurality of syringe assemblies to provide spatial skew.

[0030] A method for supplying fluid to a substrate processing system to process a substrate includes: disposing a plurality of syringe assemblies in a processing chamber, each syringe assembly including a valve having an inlet and an outlet; coupling the plurality of syringe assemblies to a manifold; and adjusting the pulse width supplied to the valve in each of the plurality of syringe assemblies based on at least one of manufacturing differences between the valves in each of the plurality of syringe assemblies and non-uniformities in the valves in each of the plurality of syringe assemblies to supply a desired dose from the valve in each of the plurality of syringe assemblies.

[0031] Among other features, the method includes: sensing pressure at the valve in each of the plurality of syringe assemblies. The method includes: adjusting the pulse width based on the corresponding pressure. The method includes: sensing the gas temperature at the valve in each of the plurality of syringe assemblies. The method includes: further adjusting the pulse width based on the corresponding gas temperature. The method includes: further varying the pulse width based on the corresponding positions of the plurality of syringe assemblies relative to the substrate.

[0032] Among other features, the method includes: further varying the pulse width based on corresponding empirical data for the plurality of syringe assemblies. The method includes: regulating the pressure inside the manifold. The method includes: adjusting the pulse width corresponding to each of the plurality of syringe assemblies to provide substantially the same dose. The method includes: adjusting the pulse width corresponding to each of the plurality of syringe assemblies to provide different doses. Each of the plurality of syringe assemblies further includes a restriction orifice. Each of the plurality of syringe assemblies further includes a bypass valve having an inlet connected to the inlet of the valve.

[0033] Among other features, the method includes: sensing pressure at the valve in each of the plurality of syringe assemblies and further adjusting the pulse widths of the valve and the bypass valve based on the corresponding pressure.

[0034] Among other features, the method includes: sensing the gas temperature at the valve in each of the plurality of syringe assemblies and further adjusting the pulse widths of the valve and the bypass valve based on the corresponding gas temperature.

[0035] Among other features, the method includes: also changing the pulse width based on a desired overlap of the valve and the bypass valve in each of the plurality of syringe assemblies. The method includes: changing the doses output by the plurality of syringe assemblies to provide spatial skew.

[0036] A method for supplying fluid to a substrate in a substrate processing system to process the substrate includes: disposing a plurality of syringe assemblies in a processing chamber, each syringe assembly including a valve having an inlet and an outlet; coupling the plurality of syringe assemblies to a manifold; and adjusting the pulse width supplied to the valve in each of the plurality of syringe assemblies to provide spatial dosing and performing at least one of: compensating for upstream skew caused by a previous process and pre-compensating for downstream skew expected from a subsequent process.

[0037] Among other features, the method includes: sensing the pressure at the valve in each of the plurality of syringe assemblies. The method includes: adjusting the pulse width based on the corresponding pressure. The method includes: sensing the gas temperature at the valve in each of the plurality of syringe assemblies. The method includes: also adjusting the pulse width based on the corresponding gas temperature.

[0038] Among other features, the method includes: also changing the pulse width based on at least one of manufacturing differences between the valves in each of the plurality of syringe assemblies and non-uniformities of the valves in each of the plurality of syringe assemblies. The method includes: regulating the pressure inside the manifold. Among other features, each of the plurality of syringe assemblies further includes a restriction orifice. Among other features, each of the plurality of syringe assemblies further includes a bypass valve having an inlet connected to the inlet of the valve.

[0039] Among other features, the method includes: sensing the pressure at the valve in each of the plurality of syringe assemblies and also adjusting the pulse widths of the valve and the bypass valve based on the corresponding pressure. The method includes: sensing the gas temperature at the valve in each of the plurality of syringe assemblies and also adjusting the pulse widths of the valve and the bypass valve based on the corresponding gas temperature.

[0040] Among other features, the method includes: also changing the pulse width based on a desired overlap of the valve and the bypass valve for each of the plurality of syringe assemblies. The method includes: changing the doses output by the plurality of syringe assemblies to provide spatial skew.

[0041] A method of supplying fluid to a substrate processing system to process a substrate includes: arranging Y sets of syringe assemblies in a processing chamber. Each of the Y sets of syringe assemblies includes N syringe assemblies. The method includes: coupling each of the N syringe assemblies in the Y sets of syringe assemblies to one of N manifolds, respectively. Each of the N syringe assemblies includes a valve that includes an inlet and an outlet, where Y and N are integers greater than one. The method includes: controlling the pulse width output to the Y sets of syringe assemblies to provide time dosing of the substrate.

[0042] In other features, providing the time dosing includes: supplying a first gas mixture from one of the N manifolds using one of the Y sets of syringe assemblies, and simultaneously supplying a different gas mixture from another of the N manifolds using another of the Y sets of syringe assemblies. The method includes: sensing the pressure at the valve of each of the N syringe assemblies. The method includes: further adjusting the pulse width based on the corresponding pressure. The method includes: sensing the gas temperature at the valve of each of the N syringe assemblies. The method includes: further adjusting the pulse width based on the corresponding gas temperature.

[0043] In other features, the method includes: further changing the pulse width based on at least one of the manufacturing differences between the valves in each of the N syringe assemblies and the non-uniformity of the valves in each of the N syringe assemblies. The method includes: adjusting the pressure inside the manifold. Each of the N syringe assemblies further includes a restriction orifice. Each of the N syringe assemblies further includes a bypass valve that has an inlet connected to the inlet of the valve.

[0044] In other features, the method includes: sensing the pressure at the valve of each of the N syringe assemblies, and further adjusting the pulse width of the valve and the bypass valve based on the corresponding pressure. The method includes: sensing the gas temperature at the valve of each of the N syringe assemblies, and further adjusting the pulse width of the valve and the bypass valve based on the corresponding gas temperature.

[0045] In other features, the method includes: further changing the pulse width based on the desired overlap of the valve and the bypass valve for each of the N syringe assemblies.

[0046] A method of supplying fluid to a substrate processing system to process a substrate includes: supplying a main gas flow using a manifold and arranging a plurality of syringe assemblies in a processing chamber. Each of the plurality of syringe assemblies is in fluid communication with the manifold and includes a valve having an inlet and an outlet. The method includes: defining R groups, each group including at least one of the plurality of syringe assemblies, where R is an integer greater than one; communicating with the valves in each of the R groups; and diverting the main gas flow into R gas flows corresponding to R predetermined flow ratios of the main gas flow by respectively adjusting the pulse widths output to the valves associated with the R groups, where at least one of the R predetermined flow ratios is different from another of the R predetermined flow ratios.

[0047] In other features, each of the plurality of syringe assemblies further includes a pressure sensor that senses the pressure at the valve of each of the plurality of syringe assemblies. The method includes: further adjusting the pulse width based on the corresponding pressure. The method includes: sensing the gas temperature at the valve in each of the plurality of syringe assemblies. The method includes: sensing the gas temperature at the valve in each of the plurality of syringe assemblies. The method includes: further adjusting the pulse width based on the corresponding gas temperature.

[0048] In other features, the method includes: further changing the pulse width based on at least one of manufacturing differences between the valves in each of the plurality of syringe assemblies and non-uniformities of the valves in each of the plurality of syringe assemblies. The method includes: adjusting the pressure inside the manifold. Each of the plurality of syringe assemblies further includes a restriction orifice. Each of the plurality of syringe assemblies further includes a bypass valve having an inlet connected to the inlet of the valve.

[0049] In other features, the method includes: sensing the pressure at the valve in each of the plurality of syringe assemblies and further adjusting the pulse widths of the valve and the bypass valve based on the corresponding pressure. The method includes: sensing the gas temperature at the valve in each of the plurality of syringe assemblies and further adjusting the pulse widths of the valve and the bypass valve based on the corresponding gas temperature.

[0050] In other features, the method includes: further changing the pulse width based on the desired overlap of the valve and the bypass valve for each of the plurality of syringe assemblies. The method includes: changing the dose output by the plurality of syringe assemblies to provide spatial skew.

[0051] The further scope of applicability of the present disclosure will become apparent from the detailed description, the claims and the drawings. The detailed description and the specific examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Description of the Drawings

[0052] The present disclosure will be more fully understood from the detailed description and the drawings, in which:

[0053] Figure 1 is a functional block diagram of an example of a substrate processing system according to the present disclosure, the substrate processing system including a multi-syringe nozzle;

[0054] Figure 2 is a graph showing an example of intentionally varying the pulse width according to the present disclosure to provide substantially the same gas dose using two syringes having manufacturing variations or other inconsistencies;

[0055] Figure 3 is an example of syringe arrangements in a multi-syringe nozzle in multiple zones:

[0056] Figures 4A - 4D is a graph illustrating the variation in timing between individual syringes or groups of syringes in a partitioned arrangement;

[0057] Figures 5 - 7 is a functional block diagram of an example of a multi-syringe nozzle according to the present disclosure.

[0058] Figure 8 is a functional block diagram of an example of a substrate processing system including an active nozzle according to the present disclosure;

[0059] Figure 9 is a functional block diagram of an example of an active syringe in an active nozzle;

[0060] Figures 10 - 13 is a flow chart illustrating a method of operating a syringe according to the present disclosure;

[0061] Figure 14 is a functional block diagram illustrating an example of a processing chamber including a dose controller and a plurality of syringes that compensate for upstream and / or downstream skew according to the present disclosure;

[0062] Figure 15 is a functional block diagram of an example of a processing chamber including a dose controller that compensates for upstream skew and a plurality of syringes according to the present disclosure:

[0063] Figure 16 is a flow chart illustrating an example of a method for processing a substrate to compensate for upstream skew of the introduced substrate according to the present disclosure;

[0064] Figure 17A and 17B is a functional block diagram of an example of a processing chamber that includes a dose controller and a plurality of syringes that compensate for downstream skew in accordance with the present disclosure;

[0065] Figure 18 is a flowchart that illustrates an example of a method for processing a substrate to compensate for downstream skew in accordance with the present disclosure;

[0066] Figures 19A - 19C illustrates an example of a manner in which a syringe is divided into one or more groups to enable spatial or temporal skew compensation in accordance with the present disclosure;

[0067] Figure 20 and 21 is a timing diagram that illustrates an example of syringe timing for spatial skew in accordance with the present disclosure;

[0068] Figure 22 is a partial functional block diagram of an example of a processing chamber that includes a plurality of manifolds to supply different gas mixtures to a syringe assembly in accordance with the present disclosure, thereby enabling time-based skew;

[0069] Figure 23 is in accordance with the present disclosure in Figure 22 a cross-sectional view of an example of a manifold;

[0070] Figure 24 is a timing diagram that illustrates an example of time skew in accordance with the present disclosure;

[0071] Figure 25 is a partial functional block diagram of an example of a processing chamber in accordance with the present disclosure that has a dose controller and a plurality of syringes that are grouped and controlled to provide a predetermined ratio of main flow rates;

[0072] Figure 26 is a flowchart of an illustrative method for dividing a main flow rate into a plurality of gas flow rates using a plurality of syringe groups.

[0073] In the drawings, reference numerals may be reused to identify like and / or identical elements. Detailed Description

[0074] To reduce time delays, a gas delivery system according to the present disclosure uses multiple gas injectors and a common gas supply manifold to supply gas into a processing chamber. These injectors are arranged at multiple locations above a substrate inside the processing chamber. There are often manufacturing differences between gas injectors of the same form from the same manufacturer. When the dose (or pulse width) of the injector is relatively short, this manufacturing difference can cause significant dose variations and / or non-uniformities, even when using the same pulse width. Reducing the manufacturing tolerances sufficiently to eliminate the metering differences between these valves has proven to be costly.

[0075] The dose per pulse also depends on the previous pulse width and / or flow rate. In systems performing ALD and ALE, precise dose control is required and very rapid switching between different gas mixtures is performed. In some examples, these doses are supplied and the substrate is exposed to these doses during a period of less than 2 seconds, 1 second, 0.5 second, or even shorter duration. Additionally, given the frequency of gas mixture switching, dose variations due to the previous pulse width or flow rate are unacceptable.

[0076] The systems and methods according to the present disclosure enable precise gas doses to be injected into a processing chamber using multiple injectors inside the processing chamber. These injectors can operate in a blocked flow state or a non-blocked flow state. When operating in a blocked flow state, the flow rate from the injector is not affected by the downstream pressure. When operating in a non-blocked flow state, the flow rate from the injector may be affected by the downstream pressure.

[0077] The pulse width can be changed by a dose controller to compensate for manufacturing differences and / or other non-uniformities between injectors. In some examples, non-uniformities can arise due to dependencies on the immediately previous injector dose and flow rate, etc. The dose controller can also be used to provide time-varying gas concentrations, spatially skewed gas doses, and / or time-based skewed gas doses.

[0078] When the injectors operate in a blocked flow state, the flow rate is not affected by the downstream pressure. In this example, each of these injectors includes a variable flow restrictor (VFR) and a fixed flow restrictor (FFR). For example, a stop valve and a restrictor orifice can be used. These injectors can be supplied by a common supply manifold. In some examples, the manifold pressure is measured with pressure sensors in the manifold and / or at the injectors, and these pressure sensors have a sampling rate higher than the injector switching frequency. In some examples, the manifold pressure is measured in the manifold and / or at the injectors with a pressure sensor having a sampling rate at least 10 times higher than the injector switching frequency. In some examples, the gas temperature is measured at each of the injectors.

[0079] The pressure and temperature of each of these syringes are output to a dose controller. The dose controller calculates the pulse width for the valve in each syringe to provide an accurate mass flow rate determined by the flow setpoint of the syringe flow rate and the flow function. The flow function is based on the manifold pressure, the gas temperature at the syringe, geometric parameters, and / or empirical test data. In some examples, the pulse width for the dose is defined without gas state conditions and is based on a combination of the desired dose and / or empirical data. In some examples, the pressure within the manifold is actively controlled by a pressure regulator.

[0080] When the syringe is operating in a non-blocking flow state, the flow rate is affected by the downstream pressure. In this example, the syringe includes a valve and a bypass valve. In some examples, the manifold pressure at the manifold or these valves is measured using a pressure sensor with a high sampling rate. In some examples, the gas temperature is measured at the syringe.

[0081] The measured pressure and temperature are output to the dose controller. The dose controller calculates the pulse width for the valve in each syringe to provide an accurate mass flow rate determined by the flow setpoint of the syringe flow rate and the flow function. The flow function is based on the manifold pressure, the gas temperature at the syringe, the desired overlap between the valve and the bypass valve, geometric parameters, and / or empirical test data. In some examples, the pulse width for the dose is defined without gas state conditions and is based on the desired dose, the desired overlap between the valve and the bypass valve, geometric parameters, and / or empirical test data. In some examples, the pressure inside the manifold is actively controlled by a pressure regulator.

[0082] Now referring to Figure 1 , an example of a substrate processing system 50 in accordance with the present disclosure is shown. The substrate processing system 50 includes a processing chamber 52. A substrate support 54, such as an electrostatic chuck (ESC), is disposed within the processing chamber 52. A substrate 56 is disposed on the substrate support 54 during processing.

[0083] The gas delivery system 60 includes gas sources 62-1, 62-2, …, and 62-N (collectively referred to as gas sources 62), which are connected to valves 64-1, 64-2, …, and 64-N (collectively referred to as valves 64) and mass flow controllers 66-1, 66-2, …, and 66-N (collectively referred to as MFCs 66). The MFCs 66 control the gas flow rate from the gas sources 62 to a manifold 68 where the gases are mixed. The output of the manifold 68 is supplied to a manifold 72 via an optional pressure regulator 70. The output of the manifold 72 is input to a multi-syringe nozzle 74. Although manifolds 68 and 72 are shown, a single manifold may be used.

[0084] In some examples, the temperature of the substrate support 54 can be controlled by the resistive heater 76 and / or the coolant channels 78. The coolant channels 78 supply coolant fluid from the fluid reservoir 82 and the pump 80. Pressure sensors 90, 91 can be disposed in the manifold 68 or the manifold 72 respectively to measure pressure. The valves 92 and the pump 94 can be used to evacuate reactants from the processing chamber 52 and / or control the pressure within the processing chamber 52.

[0085] The controller 96 includes a dose controller 98 that controls the dosing provided through the multi-syringe head 74. The controller 96 also controls the gas delivery from the gas delivery system 60. The controller 96 uses the valves 92 and the pump 94 to control the pressure in the processing chamber and / or the evacuation of reactants. The controller 96 controls the temperature of the substrate support 54 and the substrate 56 based on temperature feedback from sensors (not shown) in the substrate support and / or sensors (not shown) that measure the coolant temperature.

[0086] Now referring to Figure 2 , two syringes of the same type from the same manufacturer may have manufacturing differences and may not provide the same dose when using the same pulse width, especially a shorter pulse width. If two syringes (identified as syringe 1 and syringe 2 in Figure 2 ) are controlled with the same pulse width, they will produce different doses because syringe 1 flows at a higher maximum rate (e.g., standard cubic centimeters per minute (sccm)) compared to syringe 2. According to the present disclosure, different pulse widths are used when controlling syringe 1 and syringe 2 when the same dose is desired. As used herein, the term same dose means the dosing difference is within 5%, 3%, or 1%. The first pulse width output for syringe 1 will be shorter than the second pulse width output for syringe 2 to provide the same dose. In other words, the dose controller 98 compensates the pulse widths output to these syringes to account for manufacturing differences between the syringes. Similar compensation can be made when controlling these syringes to provide different dosings. In some examples, these syringes are bench-tested to determine the differences in gas dosing. In other examples, these syringes are actuated individually and the gas dosing is evaluated in situ in the processing chamber.

[0087] Now referring to Figure 3 and 4A-4D, these syringes can be arranged in zones and controlled to provide the same dose, the same dose timing, different doses, and / or different dose timings. For example, differential dose timing can be used to generate a gas wave across the substrate to be processed. In other words, the gas dose can be supplied centrally and then sequentially in subsequent zones in a radially outward direction (or in the opposite direction from the edge to the center). In some examples, different doses for individual syringes can be used to eliminate thickness non-uniformities.

[0088] In Figure 3 , a plurality of syringes 100 (e.g., 100-1, 100-2, 100-3) are arranged in P zones (e.g., zone 1, zone 2, zone 3 respectively), where P is an integer greater than zero. In Figure 4A , the syringes 100 in the plurality of zones provide the same dose and the same dose timing. In Figure 4B , the syringes 100 in the plurality of zones provide the same dose with an offset timing. In Figure 4A and 4B the syringes 100 are individually compensated to provide the same dose as described above.

[0089] In Figure 4C , the syringes 100 in the plurality of zones provide different doses and start at the same time. In Figure 4D , the syringes 100 in the plurality of zones provide different doses and terminate at the same time. In Figure 4C and 4D the syringes 100 are individually compensated to provide different doses as described above.

[0090] Now refer to Figures 5 - 7 , which shows a plurality of multi-syringe nozzles 74 arranged. In Figure 5In [the figure], the multi-syringe nozzle 74 is shown as including syringe assemblies 150-1, 150-2, …, and 150-X (collectively referred to as syringe assemblies 150) (where X is an integer greater than one). The syringe assemblies 150 each include pressure sensors 152-1, 152-2, …, and 152-X (collectively referred to as pressure sensors 152) to sense pressure at the inlets of variable flow restrictors (VFRs) 154-1, 154-2, …, and 154-X (collectively referred to as VFR 154). The pulse width of the VFR 154 is controlled by a dose controller 98, as further described below. The syringe assemblies 150 also include temperature sensors 156-1, 156-2, …, and 156-X (collectively referred to as temperature sensors 156) that sense the gas temperature. In some examples, fixed flow restrictors (FFRs) 158-1, 158-2, …, and 158-X (collectively referred to as FFR 158) are connected to the outlets of the VFR 154.

[0091] In Figure 6 [the figure], the multi-syringe nozzle 74 includes syringe assemblies 160-1, 160-2, …, and 160-X (collectively referred to as syringe assemblies 160) (where X is an integer greater than one), which each include pressure sensors 162-1, 162-2, …, and 162-X (collectively referred to as pressure sensors 162) to sense pressure at the inlets of valves 164-1, 164-2, …, and 164-X (collectively referred to as valves 164). The pulse width of the valves 164 is controlled by a dose controller 98, as further described below. The syringe assemblies 160 also include temperature sensors 166-1, 166-2, …, and 166-X (collectively referred to as temperature sensors 166) that sense the gas temperature. In some examples, fixed orifices 168-1, 168-2, …, and 168-X (collectively referred to as fixed orifices 168) are connected to the outlets of the valves 164.

[0092] In Figure 7In [the figure], the multi-syringe nozzle 74 is shown as including syringe assemblies 170-1, 170-2, …, and 170-X (collectively referred to as syringe assemblies 170) (where X is an integer greater than one), which respectively include pressure sensors 172-1, 172-2, …, and 172-X (collectively referred to as pressure sensors 172). The pressure sensors 172 sense pressure at the inlets of valves 174-1, 174-2, …, and 174-X (collectively referred to as valves 174) and bypass valves 175-1, 175-2, …, and 175-X (collectively referred to as bypass valves 175). The pulse widths of the valves 174 and the bypass valves are controlled by a dose controller 98, as further described below. The syringe assemblies 170 also include temperature sensors 176-1, 176-2, …, and 176-X (collectively referred to as temperature sensors 176), which sense the gas temperature. In some examples, fixed orifices 178-1, 178-2, …, and 178-X (collectively referred to as fixed orifices 178) are arranged at the outlets of the valves 174.

[0093] Now referring to Figures 8 - 9 , there are other ways to implement Figure 1 the multi-syringe nozzle 74. In Figure 8 , the active nozzle 200 includes a plurality of syringes 204. Examples of the active nozzle 200 are further shown and described in the co-owned U.S. Patent Application No. 15 / 346,920 filed on XXXXXX, XX, XXXX (Lam Docket No. 4081-1US), the entire content of which is incorporated herein by reference. In Figure 9 , the syringes 204 in the active nozzle 200 are shown as including a support layer 250, an actuator layer 254, a diaphragm layer 258, a valve seat layer 262, and a gas distribution layer 266. As can be understood, the active nozzle 200 includes a plurality of syringes. In some examples, the syringes of the active nozzle 200 are formed in a substrate layer, such as a semiconductor wafer. These substrate layers can be formed and then bonded together to form the syringes.

[0094] The actuator layer 254 includes an actuator 270 that selectively moves a diaphragm 272. In some examples, the diaphragm includes an optional protrusion 273. This diaphragm 272 moves up and down as shown by the arrow to allow gas flow or prevent gas flow. The diaphragm layer 258 defines cavities 274 and 276. The valve seat layer 262 defines cavities 282 and 283. The gas distribution layer 266 defines an opening 290 and cavities 292 and 294. In some examples, a filter 286 is arranged in the cavity 294. Gas from a manifold or other gas source is supplied to the opening 290. When the diaphragm 272 is as Figure 9When shown as open in the figure, the gas flow passes through chamber 292, chamber 282, chamber 276, through filter 286 (if used), and through chamber 294 into the processing chamber. Actuator 270 moves diaphragm 272 into the closed position by offsetting the lower surface of diaphragm 272 (protrusion 273, if used) into inlet 284. In some examples, pressure sensor 296 and temperature sensor 298 are respectively used to measure the pressure and temperature in chamber 282.

[0095] Now refer to Figures 10 - 13 , which shows a method of operating a syringe. In Figure 10 , method 300 includes determining a desired gas dose for each of a plurality of syringes at 310. At 320, the pressure is measured at the manifold or at the gas syringe. At 330, the gas temperature is measured at the gas syringe. At 340, the pulse width or duration is adjusted for each syringe based on a flow relationship to provide the desired gas dose. The flow relationship is a function of the measured pressure and temperature, the overlap between the bypass valve and the flow valve, geometric parameters, and / or experimental data.

[0096] In Figure 11 , in the absence of complete information about the gas state, the dose adjustment is performed in method 350. At 352, the desired gas dose for each syringe is determined. At 354, the pulse width or duration is adjusted for each syringe based on a flow relationship to provide the desired gas dose. The flow relationship is a function of the overlap between the bypass valve and the flow valve, geometric parameters, and / or experimental data.

[0097] In Figure 12 , method 400 includes: at 410, determining a desired gas dose for each of a plurality of syringes. At 420, the pressure is measured at the manifold or at the gas syringe. At 430, the gas temperature is measured at the gas syringe. At 440, the pulse width or duration is adjusted for each syringe based on a flow relationship to provide the desired gas dose. The flow relationship is a function of the measured pressure and temperature, the overlap between the bypass valve and the flow valve, geometric parameters, and / or experimental data.

[0098] In Figure 13 , in the absence of complete information about the gas state, the dose adjustment is performed in method 450. Method 450 includes determining a desired gas dose for each of a plurality of syringes at 460. At 470, the pulse width or duration is adjusted for each syringe based on a flow relationship to provide the desired gas dose. The flow relationship is a function of the overlap between the bypass valve and the flow valve, geometric parameters, and / or experimental data.

[0099] Now refer toFigure 14 , the substrate processing system 480 includes one or more processing chambers, and the processing chambers include a plurality of syringes (such as those described above), which provide compensation for upstream and / or downstream substrate non-uniformity or skew (collectively referred to as skew herein). The skew data may correspond to a substrate film having a central region thicker than the edge region, an edge region thicker than the central region, variations between sides, or other variations from a flat surface. The skew may be caused by an upstream process or be an expected skew anticipated by a downstream process. The skew data may be generated for the same substrate being processed, a test substrate, model building, and / or one or more substrates prior to the substrate being processed. The skew data may be generated as a function (such as an average, moving average, statistical function, etc.) of two or more substrates.

[0100] The processing chamber 482 performs substrate processing, such as deposition, etching, or other substrate processing on the substrate. In some examples, the substrate processing performed generates skew, which is compensated during downstream processing. In some examples, a metrology station 484 is disposed downstream of the processing chamber 482 to perform one or more measurements on the substrate after processing and generate metrology data for the substrate. In some examples, the metrology station 484 generates skew data based on film thickness measurements and / or generates a surface model for the substrate. The metrology station 484 outputs the metrology data to a downstream processing chamber 488. The processing chamber 488 includes a plurality of syringes and performs the dose control described herein to compensate for skew. The processing chamber 488 uses the metrology data to determine the amount of compensation required to offset the skew introduced by the processing chamber 482. In other examples, the metrology station 484 is omitted, and the compensation is performed based on model building, previous metrology measurements taken during process setup, or other data.

[0101] For example, the processing chamber 482 may perform deposition of a film or etching of a film. In some examples, the processing chamber 482 performs deposition of a film that is thicker at the center or edge of the substrate. In some examples, the processing chamber 482 performs etching that removes more film at the center or edge of the substrate than desired. The metrology data detects the skew, and a dose controller associated with the processing chamber 488 compensates for the skew.

[0102] After the substrate is processed in the processing chamber 488, the substrate may be further processed in a processing chamber 490 located downstream of the processing chamber 488. After processing in the processing chamber 490, metrology data is generated by a metrology station 492. The metrology data is fed back to the processing chamber 488 to allow for pre-compensation of downstream skew. In other examples, the metrology station 484 is omitted, and the compensation is performed based on model building, previous metrology measurements taken during setup, or other data.

[0103] Now refer to Figure 15, the processing chamber 488 includes a controller 502 having a dose controller 504. The dose controller 504 further includes a compensation module 512 that receives skew data from the metrology station 484, the data storage 508, or another data source. The compensation module 512 also receives a desired spatial map 510 for the introduced substrate. The compensation module 512 generates skew compensation data, which is output to the dose mapping module 514. The dose mapping module 514 compensates the substrate dose map 516 based on the skew compensation data from the compensation module 512. For example, when additional or reduced etching or deposition is desired in a particular region, the local dose or duration of exposure for the precursor or etching gas can be increased or decreased, respectively, relative to other regions. The dose mapping module 514 outputs the compensated dose map to the syringe control module 520, which thus controls the syringe.

[0104] Now refer to Figure 16 , a display method 530 for processing a substrate using a plurality of syringes that are controlled using skew data to compensate for the skew of the introduced substrate. At 540, skew data (e.g., a spatial map or a set of parameters) for the substrate is received for the introduced substrate (or for a typical or expected introduced substrate). At 544, the skew data is compared with a desired spatial map or set of parameters. At 548, the compensation for the upstream skew is determined. At 564, a compensated dose map is generated based on the substrate dose map and the compensation.

[0105] Now refer to Figure 17A and 17B , which shows an example of a processing chamber that includes syringes that are controlled to pre-compensate for the skew caused by one or more downstream processes. In Figure 17A , the processing chamber 488 includes a controller 552 having a dose controller 554. The dose controller 554 includes a dose mapping module 560 that receives a desired skew 558 to pre-compensate the output substrate for the skew caused by one or more downstream processes. The dose mapping module 560 compensates the substrate dose map 564 based on the desired skew of the output substrate to pre-compensate for the downstream skew. The dose mapping module 560 outputs the compensated dose map to the syringe control module 570.

[0106] In Figure 17B , an example of a system is shown for generating a desired skew for the output substrate. The dose controller 554 further includes a metrology station 492 or a data storage 508 that outputs a spatial map or a set of parameters to a compensation module 572. The compensation module 572 also receives a desired spatial map for the downstream substrate at 574. The compensation module 572 generates a desired skew for the output substrate. As can be understood, the system shown in Figure 17B can be combined with the system shown in Figure 17A . In addition, in Figure 17A and17B The system shown in Figure 15 can be combined with the system shown in

[0107] Now refer to Figure 18 , which shows method 580 for processing a substrate using syringes that compensate the output substrate to offset skews caused by one or more downstream processes. At 582, skew data is received for one or more downstream processes. At 584, the skew data is compared with a desired spatial map. At 588, a compensation is determined to pre-compensate for the skew of the one or more downstream processes. At 594, a compensated dose map is generated based on the substrate dose map and the compensation for the one or more downstream processes.

[0108] Now refer to Figures 19A - 19C , where the syringes can be individually addressed and / or grouped to define various types of zones or zone shapes. For example, the groups can correspond to radial zones, pie-shaped zones, and / or sliced zones. In Figure 19A , the syringes are grouped into radial zones Z1, Z2, Z3, and Z4. Although four radial zones are shown, additional or fewer radial zones can be used. In Figure 19B , the syringes are grouped into radial zones and / or grouped into pie-shaped zones Q1, Q2, Q3, and Q4. Although four pie-shaped zones are shown, additional or fewer pie-shaped zones can be used. In Figure 19C , slices S1, S2, …, and S10 are shown, which can be appended to Figure 19A and 19B or used in place of these examples. In some examples, the sides of the slices are parallel and contiguous with adjacent slices. The angular positioning or angular offset of the slices can vary as needed relative to a slot in the substrate or a predetermined reference in the processing chamber. The slices can be used to accommodate skews between sides.

[0109] Now refer to Figure 20 and 21 , which shows an example of a timing diagram that illustrates syringe timing for spatially based skews by individual syringes or groups of syringes. In Figure 20 , one or more of the timing diagrams in provide different syringe dose control timings for individual syringes or groups of syringes. The individual syringes or groups of syringes associated with timing distribution A have a pulse width that decreases slowly as a function of time. Compared with timing distribution A, the individual syringes or groups of syringes associated with timing distributions B and C have a pulse width that decreases at a slightly faster rate. The individual syringes or groups of syringes associated with timing distribution D have a fixed pulse width during the corresponding period. The variable pulse widths associated with individual syringes or groups of syringes enable precise control of spatial and / or temporal dosing.

[0110] In Figure 21 these timing distributions can be used to generate different spatial patterns. The syringe or group of syringes associated with the timing distribution D has a fixed pulse width during the corresponding period. The syringe or group of syringes associated with the timing distributions B and C has a pulse duration that is about 1 / 2 of the pulse duration in the timing distribution D. The syringe or group of syringes associated with the timing distribution A has a pulse width similar to that of the timing distributions B and C for some time periods and skips other time periods. The variable pulse widths associated with individual syringes or groups of syringes enable precise control of spatial and / or temporal dosing.

[0111] Now referring to Figure 22 which shows a portion of the processing chamber 650 to include a plurality of manifolds 654-1, 654-2, …, and 654-N (collectively the manifolds 654), and gas delivery systems 658-1, 658-2, …, and 658-N (collectively the gas delivery systems 658), where N is an integer greater than one. The manifolds 654 supply different gas mixtures to groups of syringe assemblies 660-1, 660-2, …, and 660-Y (collectively the groups of syringe assemblies 660), where Y is an integer greater than one. Although one gas delivery system is shown per manifold, additional or fewer gas delivery systems may be used.

[0112] As further described below, the syringe assemblies 660 can be configured to produce a time skew. Each of the groups of syringe assemblies 660-1, 660-2, …, and 660-Y includes N syringes 662-11, 662-12, …, and 662-YN. Each of the N syringes in the groups of syringe assemblies 660 is connected to one of the N manifolds 654-1, 654-2, …, and 654-N, respectively. This arrangement enables the gas mixtures supplied to the N manifolds 654 to be delivered to each of the groups of syringe assemblies 660.

[0113] Now referring to Figure 23, each of manifolds 654-1, 654-2, …, and 654-N defines an inflation portion 668-1, 668-2, …, and 668-N (collectively inflation portions 668), and includes a plurality of through holes 670. In some examples, the inflation portions 668 are generally shaped like flat cylinders. To maintain separation of the gas mixture from inflation portion 668-1, columns 672 having corresponding aligned through holes 673 are disposed in the underlying inflation portions 668-2, …, 668-N to allow the gas mixture in inflation portion 668-1 to travel through through holes 670 and 673 to reach the corresponding syringe without intermixing in inflation portions 668-2, …, 668-N. A similar manner is used for the others in inflation portions 668. Although a particular arrangement of the manifolds is shown, other manifold arrangements may be used.

[0114] Using the processing chamber shown in Figures 22 - 23 , time skew can be performed. An example of time skew is shown in Figure 24 . At a first position 1 (including one or more syringe assemblies), the gas mixture is switched from a first gas mixture 1 to a second gas mixture 2 at time t1, and then switched to a third gas mixture 3 at time t3. At a second position 2 (including one or more syringe assemblies), the gas mixture is switched from a first gas mixture 1 to a second gas mixture 2 at time t2, and then switched to a third gas mixture 3 at time t4. At a third position 3 (including one or more syringe assemblies), the gas mixture is switched from a first gas mixture 1 to a second gas mixture 2 at time t3, and then switched to a third gas mixture 3 at time t4. At a fourth position 4 (including one or more syringe assemblies), the gas mixture is switched from a first gas mixture 1 to a second gas mixture 2 at time t4, and then switched to a third gas mixture 3 at time t5.

[0115] For example, the first position 1 may correspond to a central region, and positions 2-4 may correspond to increasing radial regions surrounding the central region (but the same manner can be used for other groups of syringes having other shapes). As can be understood, the gas mixtures used will depend on the process and may include deposition gas mixtures, etch gas mixtures, purge gases, or other gas mixtures. For example, gas mixture 1 may include a first precursor for an ALD or ALE process, the second gas mixture may include a purge gas, and the third gas mixture may include a second precursor for an ALD or ALE process.

[0116] Now refer to Figure 25, the processing chamber 700 includes a plurality of syringes 722, which are grouped in various ways as described herein. The syringes 722 are controlled by a dose controller 720 to provide a predetermined proportion of the main flow rate. The main flow rate is supplied to the manifold 718 through a gas delivery system 708, which includes a gas source 710 and an MFC 714. In Figure 25 the example shown, the syringes 722 are divided into R groups (GRP 1, GRP 2, …, and GRP R), which are associated with R spatial regions of the substrate. Each of the R groups may include the same number or different numbers of syringes.

[0117] In one example, it is desired to supply two or more different predetermined main flow rates in proportion to the R spatial regions of the substrate. For example, an etching or deposition process may require that more etching gas or deposition precursor gas be delivered to the center or edge region of the substrate compared to other regions of the substrate. The pulse widths of the syringes in the R groups are changed such that a predetermined proportion of the main flow rate at the manifold 718 can be delivered to the R spatial regions without the need for a diverter.

[0118] Traditionally, the gas flowing out of the manifold 718 would be split using a diverter. In some examples, the diverter includes a sonic nozzle. However, systems using a diverter take a long time to reach a steady-state flow condition. Thus, in processes such as ALD and ALE processes that require improved spatial control and / or rapid gas exchange, the diverter is difficult to use.

[0119] The syringes associated with the R groups are controlled using R pulse widths to provide R predetermined proportions of the main flow rate supplied to the manifold 718, where R is an integer greater than zero.

[0120] For example, all of the R groups may be pulsed with the same pulse width to deliver the same dose (assuming the groups have the same number of syringes). Alternatively, two or more different pulse widths may be used to vary the proportion for at least some of the R groups. For example, one of the R groups may be pulsed with a pulse width that is 1 / 2 of the pulse width of the other of the R groups to cause less flow to the one of the R groups and more flow to the other of the R groups. In another example, the pulse widths for all of the R groups are changed to provide an increasing spatial profile, a decreasing spatial profile, a bell-shaped profile, an inverse bell-shaped profile, or other gas dosing profiles.

[0121] Now refer to Figure 26, shows method 750, which is used to split a main gas flow into R gas flows supplied to R spatial regions of a substrate. At 754, the proportions of the main gas flow to be delivered to each of the R spatial regions of the substrate are determined. At 758, the pulse widths of the injectors corresponding to the R spatial regions of the substrate are determined to provide the R proportions. At 762, the main gas flow rate is supplied to the manifold. At 766, the gas flow rate supplied to the manifold is split using the R pulse width values corresponding to the injectors in the R spatial regions.

[0122] The foregoing description is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. The broad teachings of the disclosure can be implemented in a variety of forms. Thus, while the disclosure includes specific examples, the true scope of the disclosure should not be so limited since other modifications will become apparent upon study of the drawings, the specification, and the appended claims. It should be understood that one or more steps in a method can be performed in a different order (or concurrently) without changing the principles of the disclosure. Additionally, while each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure can be implemented in and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more of the embodiments with each other remain within the scope of the disclosure.

[0123] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), and the various terms include "connected", "joined", "coupled", "adjacent", "next to", "on top of", "above", "below", and "disposed". Unless the relationship between a first and a second element is explicitly described as "direct", when such a relationship is described in the foregoing disclosure, the relationship can be a direct relationship where there are no other intermediate elements between the first and the second element, but can also be an indirect relationship where there is one or more intermediate elements between the first and the second element (spatially or functionally). As used herein, the phrase "at least one of A, B, and C" should be construed to mean a logical (A or B or C) using a non-exclusive logical OR, and should not be construed to mean "at least one of A, at least one of B, and at least one of C".

[0124] In some implementations, the controller is part of a system, which can be part of the above examples. Such systems can include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestal, gas flow system, etc.). These systems can be integrated with electronics for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronics can be referred to as a "controller", which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools and other transfer tools and / or load locks connected or interfaced to a specific system.

[0125] Broadly speaking, the controller can be defined as electronics having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. The integrated circuits can include chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files), and the individual settings (or program files) define operation parameters for performing specific processes on or for semiconductor wafers or systems. In some embodiments, the operation parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the fabrication of one or more (types of) layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or die of a wafer.

[0126] In some implementations, the controller can be part of or coupled to a computer that is integrated with, coupled to, networked to the system in other ways, or a combination thereof. For example, the controller can be in the "cloud" or be all or part of a fab host system, which can allow remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of manufacturing operations, review the history of past manufacturing operations, review trends or performance criteria for multiple manufacturing operations, change parameters of the current process, set processing steps to follow the current process, or initiate a new process. In some examples, a remote computer (such as a server) can provide a process recipe to the system via a network, which can include a local network or the Internet. The remote computer can include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller can be distributed, for example, by including one or more discrete controllers that are networked together and work towards a common purpose (such as the processes and controls described herein). An example of a distributed controller for such purposes is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remote (such as at the platform level or as part of a remote computer), which combine to control the process on the chamber.

[0127] Example systems can include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that can be associated with or used for the manufacture and / or preparation of semiconductor wafers.

[0128] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in the material transport that shuttles wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A substrate processing system for processing a substrate, the substrate processing system comprising: A manifold; A multi-syringe nozzle including a plurality of syringe assemblies located in a processing chamber, wherein each of the plurality of syringe assemblies is in fluid communication with the manifold and includes a valve, the valve including an inlet and an outlet; A dose controller configured to: Communicate with the valve in each of the plurality of syringe assemblies; and Adjust a pulse width supplied to the valve in each of the plurality of syringe assemblies based on at least one of a manufacturing difference between the valves in each of the plurality of syringe assemblies and a non-uniformity of the valves in each of the plurality of syringe assemblies, so that a desired dose is supplied from the valve in each of the plurality of syringe assemblies.

2. The substrate processing system according to claim 1, wherein each of the plurality of syringe assemblies further includes a pressure sensor that senses a pressure at the valve in each of the plurality of syringe assemblies.

3. The substrate processing system according to claim 2, wherein the dose controller is configured to adjust the corresponding pulse width for each valve based on the corresponding sensed pressure.

4. The substrate processing system according to claim 1, wherein each of the plurality of syringe assemblies further includes a temperature sensor that senses a gas temperature at the valve in each of the plurality of syringe assemblies.

5. The substrate processing system according to claim 4, wherein the dose controller is configured to adjust the corresponding pulse width for each valve based on the corresponding sensed gas temperature.

6. The substrate processing system according to claim 1, wherein the dose controller is configured to change the pulse width based on the corresponding positions of the plurality of syringe assemblies relative to the substrate.

7. The substrate processing system according to claim 1, wherein the dose controller is configured to change the pulse width based on corresponding empirical data for the plurality of syringe assemblies.

8. The substrate processing system according to claim 1, comprising a pressure regulator to regulate the pressure inside the manifold.

9. The substrate processing system according to claim 1, wherein the dose controller is configured to adjust the pulse width so that the valves provide substantially the same dose.

10. The substrate processing system according to claim 1, wherein the dose controller is configured to adjust the pulse width such that the valve provides different doses.

11. The substrate processing system according to claim 1, wherein each of the plurality of syringe assemblies includes a restriction orifice.

12. The substrate processing system according to claim 1, wherein each of the plurality of syringe assemblies further includes a bypass valve having an inlet connected to the inlet of the valve.

13. The substrate processing system according to claim 12, wherein each of the plurality of syringe assemblies further includes a pressure sensor that senses the pressure at the corresponding valve in each of the plurality of syringe assemblies, and wherein the dose controller is configured to adjust the pulse width for the valve and the bypass valve based on the corresponding sensed pressure.

14. The substrate processing system according to claim 12, wherein each of the plurality of syringe assemblies further includes a temperature sensor that senses the gas temperature at the corresponding valve in each of the plurality of syringe assemblies, and wherein the dose controller is configured to adjust the pulse width for the valve and the bypass valve based on the corresponding sensed gas temperature.

15. The substrate processing system according to claim 12, wherein the dose controller is configured to change the corresponding pulse width based on the desired overlap of the valve and the bypass valve for each of the plurality of syringe assemblies.

16. The substrate processing system according to claim 1, wherein the dose controller is configured to vary the doses output by the plurality of syringe assemblies to provide spatial skew.

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